JPS5776846A - Surface treating method for semiconductor - Google Patents

Surface treating method for semiconductor

Info

Publication number
JPS5776846A
JPS5776846A JP15312980A JP15312980A JPS5776846A JP S5776846 A JPS5776846 A JP S5776846A JP 15312980 A JP15312980 A JP 15312980A JP 15312980 A JP15312980 A JP 15312980A JP S5776846 A JPS5776846 A JP S5776846A
Authority
JP
Japan
Prior art keywords
semiconductor
rays
gas
laser
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15312980A
Other languages
Japanese (ja)
Inventor
Masanao Itoga
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15312980A priority Critical patent/JPS5776846A/en
Publication of JPS5776846A publication Critical patent/JPS5776846A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remove a pollutant on the surface of the semiconductor due to dry etching by irradiating pulse-shaped rays onto the surface of the semiconductor and heating the surface of the semiconductor. CONSTITUTION:A wafer is placed on a wafer supporting base 2 in a quartz chamber 1, and gas is passed in the chamber 1 through a gas discharger 5 changing gas into a plasmic substance, and discharged from a gas discharge pipe 4. A laser oscillator 6, which can scan and beams therefrom are sufficiently diaphragmed on the surface of the semiconductor, is mounted onto the chamber 1 and pulse rays are used as the laser rays. Since only a surface layer of the semiconductor is heated through the scanning of the laser rays changed into pulses in this manner, a reactant of a radical and the pollutant is easily gasified and dispersed, and the surface treating method can double as laser annealing when the conditions of surface treating are optimized.
JP15312980A 1980-10-31 1980-10-31 Surface treating method for semiconductor Pending JPS5776846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15312980A JPS5776846A (en) 1980-10-31 1980-10-31 Surface treating method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15312980A JPS5776846A (en) 1980-10-31 1980-10-31 Surface treating method for semiconductor

Publications (1)

Publication Number Publication Date
JPS5776846A true JPS5776846A (en) 1982-05-14

Family

ID=15555612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15312980A Pending JPS5776846A (en) 1980-10-31 1980-10-31 Surface treating method for semiconductor

Country Status (1)

Country Link
JP (1) JPS5776846A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129425A (en) * 1983-01-14 1984-07-25 Toshiba Corp Dry etching device
JPS59201426A (en) * 1983-04-29 1984-11-15 Sony Corp Processing of semiconductor substrate
JPS6039238U (en) * 1983-08-24 1985-03-19 ウシオ電機株式会社 UV cleaning equipment
JPS61171135A (en) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp Plasma etching device
JPS62109448U (en) * 1985-12-27 1987-07-13
JPS6320833A (en) * 1986-07-14 1988-01-28 Toshiba Corp Ashing apparatus
JPH027522A (en) * 1988-06-27 1990-01-11 Mitsubishi Electric Corp Manufacture of semiconductor device and apparatus therefor
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
JPH02248041A (en) * 1989-03-20 1990-10-03 Mitsubishi Electric Corp Laser beam irradiation device
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
WO1993019888A1 (en) * 1992-03-31 1993-10-14 Cauldron Limited Partnership Removal of surface contaminants by irradiation
US5496506A (en) * 1992-09-21 1996-03-05 Sony Corporation Process for removing fine particles
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113329A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Light dry etching
JPS55118636A (en) * 1979-03-08 1980-09-11 Toshiba Corp Gas etching method and device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113329A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Light dry etching
JPS55118636A (en) * 1979-03-08 1980-09-11 Toshiba Corp Gas etching method and device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129425A (en) * 1983-01-14 1984-07-25 Toshiba Corp Dry etching device
JPS59201426A (en) * 1983-04-29 1984-11-15 Sony Corp Processing of semiconductor substrate
JPS6039238U (en) * 1983-08-24 1985-03-19 ウシオ電機株式会社 UV cleaning equipment
JPH0527968B2 (en) * 1985-01-24 1993-04-22 Mitsubishi Electric Corp
JPS61171135A (en) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp Plasma etching device
JPS62109448U (en) * 1985-12-27 1987-07-13
JPH056654Y2 (en) * 1985-12-27 1993-02-19
JPS6320833A (en) * 1986-07-14 1988-01-28 Toshiba Corp Ashing apparatus
JPH027522A (en) * 1988-06-27 1990-01-11 Mitsubishi Electric Corp Manufacture of semiconductor device and apparatus therefor
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
JPH02248041A (en) * 1989-03-20 1990-10-03 Mitsubishi Electric Corp Laser beam irradiation device
WO1993019888A1 (en) * 1992-03-31 1993-10-14 Cauldron Limited Partnership Removal of surface contaminants by irradiation
US5496506A (en) * 1992-09-21 1996-03-05 Sony Corporation Process for removing fine particles
US5628954A (en) * 1992-09-21 1997-05-13 Sony Corporation Process for detecting fine particles

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