JPS5719034A - Vapor growth apparatus - Google Patents

Vapor growth apparatus

Info

Publication number
JPS5719034A
JPS5719034A JP9361480A JP9361480A JPS5719034A JP S5719034 A JPS5719034 A JP S5719034A JP 9361480 A JP9361480 A JP 9361480A JP 9361480 A JP9361480 A JP 9361480A JP S5719034 A JPS5719034 A JP S5719034A
Authority
JP
Japan
Prior art keywords
area
excited
reaction
growth apparatus
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9361480A
Other languages
Japanese (ja)
Other versions
JPS5941773B2 (en
Inventor
Hideo Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9361480A priority Critical patent/JPS5941773B2/en
Publication of JPS5719034A publication Critical patent/JPS5719034A/en
Publication of JPS5941773B2 publication Critical patent/JPS5941773B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE: To form a thin film of a good quality by providing a plasma generating area to be excited by a frequency different from that in a reacting tube on the side of a reaction gas introducing inlet in a reaction area of a vapor growth apparatus.
CONSTITUTION: In a vapor growth apparatus in which a plasma generator section 5 to be excited by a given frequency is provided as a reaction area 7 in a reacting tube 1 decompressing, a plasma generation area 9 is provided on the side of a reaction gas introducing inlet 2 in the reaction area 7 in such a manner as to be excited by a frequency different from that excited in the reaction area 7. Then, a plasma is generated in the plasma generation area 9 beforehand to excite a reaction gas, which flows into the reaction area 7. This enables the growing of a thin film of a good quality on the surface of a wafer 8.
COPYRIGHT: (C)1982,JPO&Japio
JP9361480A 1980-07-09 1980-07-09 Vapor phase growth method and apparatus Expired JPS5941773B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9361480A JPS5941773B2 (en) 1980-07-09 1980-07-09 Vapor phase growth method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9361480A JPS5941773B2 (en) 1980-07-09 1980-07-09 Vapor phase growth method and apparatus

Publications (2)

Publication Number Publication Date
JPS5719034A true JPS5719034A (en) 1982-02-01
JPS5941773B2 JPS5941773B2 (en) 1984-10-09

Family

ID=14087199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9361480A Expired JPS5941773B2 (en) 1980-07-09 1980-07-09 Vapor phase growth method and apparatus

Country Status (1)

Country Link
JP (1) JPS5941773B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193361A (en) * 1982-04-30 1983-11-11 Shimadzu Corp Plasma chemical vapor deposition apparatus
JPS59191324A (en) * 1983-04-14 1984-10-30 Victor Co Of Japan Ltd Plasma reaction apparatus
JPS60143625A (en) * 1983-12-30 1985-07-29 Fujitsu Ltd Manufacture of semiconductor device
JPH01111871A (en) * 1987-10-23 1989-04-28 Nec Corp Plasma vapor phase growing device
WO2020240915A1 (en) * 2019-05-24 2020-12-03 三菱重工業株式会社 Test piece holder, cleansing system, method for measuring amount of corrosion, and device for measuring amount of corrosion

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193361A (en) * 1982-04-30 1983-11-11 Shimadzu Corp Plasma chemical vapor deposition apparatus
JPS59191324A (en) * 1983-04-14 1984-10-30 Victor Co Of Japan Ltd Plasma reaction apparatus
JPS60143625A (en) * 1983-12-30 1985-07-29 Fujitsu Ltd Manufacture of semiconductor device
JPH0475650B2 (en) * 1983-12-30 1992-12-01 Fujitsu Ltd
JPH01111871A (en) * 1987-10-23 1989-04-28 Nec Corp Plasma vapor phase growing device
WO2020240915A1 (en) * 2019-05-24 2020-12-03 三菱重工業株式会社 Test piece holder, cleansing system, method for measuring amount of corrosion, and device for measuring amount of corrosion

Also Published As

Publication number Publication date
JPS5941773B2 (en) 1984-10-09

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