JPS5713746A - Vapor-phase growing apparatus - Google Patents

Vapor-phase growing apparatus

Info

Publication number
JPS5713746A
JPS5713746A JP8864680A JP8864680A JPS5713746A JP S5713746 A JPS5713746 A JP S5713746A JP 8864680 A JP8864680 A JP 8864680A JP 8864680 A JP8864680 A JP 8864680A JP S5713746 A JPS5713746 A JP S5713746A
Authority
JP
Japan
Prior art keywords
reactor
reaction
vapor
reaction gas
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8864680A
Other languages
Japanese (ja)
Inventor
Hideo Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8864680A priority Critical patent/JPS5713746A/en
Publication of JPS5713746A publication Critical patent/JPS5713746A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a vapor-phase growing apparatus which has high film forming speed at a low temperature by providing a plasma generator at the inlet side of a reaction tube having a reaction gas inlet and an exhaust port, activating in advance the reaction gas at the generator and then supplying it to a reactor at the exhaust port side. CONSTITUTION:A wafer 11 is inserted into a reactor 5 in a reaction tube 1, and the tube is then evacuated. A heater 4 of the reactor is controlled to set the reaction temperature at 400 deg.C, a reaction gas of monosilane and ammonia is introduced from a reaction gas inlet 2, is activated at a plasma generator 10 between plasma generating electrodes 8 and 9, and is flowed to the reactor. An Si3N4 film is grown at the rate of 50-150Angstrom /min on the surface of the wafer 11. Since the reaction temperature is thus low, no defect occurs even at the wafer of large bore, and the vapor-phase film growing time can be shortened.
JP8864680A 1980-06-30 1980-06-30 Vapor-phase growing apparatus Pending JPS5713746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8864680A JPS5713746A (en) 1980-06-30 1980-06-30 Vapor-phase growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8864680A JPS5713746A (en) 1980-06-30 1980-06-30 Vapor-phase growing apparatus

Publications (1)

Publication Number Publication Date
JPS5713746A true JPS5713746A (en) 1982-01-23

Family

ID=13948577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8864680A Pending JPS5713746A (en) 1980-06-30 1980-06-30 Vapor-phase growing apparatus

Country Status (1)

Country Link
JP (1) JPS5713746A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100515A (en) * 1982-11-30 1984-06-09 Seisan Gijutsu Shinko Kyokai Thin film generating device
JPS63143809A (en) * 1986-12-08 1988-06-16 Mitsui Toatsu Chem Inc Equipment for forming thin film
JPS63143807A (en) * 1986-12-08 1988-06-16 Mitsui Toatsu Chem Inc Film forming equipment
JPS63143808A (en) * 1986-12-08 1988-06-16 Mitsui Toatsu Chem Inc Thin film forming equipment
JPH08312461A (en) * 1995-05-08 1996-11-26 Lg Electronics Inc Combustion apparatus for stirling engine

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100515A (en) * 1982-11-30 1984-06-09 Seisan Gijutsu Shinko Kyokai Thin film generating device
JPS63143809A (en) * 1986-12-08 1988-06-16 Mitsui Toatsu Chem Inc Equipment for forming thin film
JPS63143807A (en) * 1986-12-08 1988-06-16 Mitsui Toatsu Chem Inc Film forming equipment
JPS63143808A (en) * 1986-12-08 1988-06-16 Mitsui Toatsu Chem Inc Thin film forming equipment
JPH08312461A (en) * 1995-05-08 1996-11-26 Lg Electronics Inc Combustion apparatus for stirling engine

Similar Documents

Publication Publication Date Title
JPS6448421A (en) Ashing method
GR3007016T3 (en)
JPS5713746A (en) Vapor-phase growing apparatus
JPS5766625A (en) Manufacture of film
JPS5694751A (en) Vapor growth method
JPS5524424A (en) Forming device of pressure-reduced epitaxial layer
ATE122322T1 (en) METHOD FOR PRODUCING SILICON CARBIDE.
JPS56161832A (en) Gaseous phase treatment device
JPS5298475A (en) Plasma treating apparatus
JPS5719034A (en) Vapor growth apparatus
JPS56137639A (en) Decompression vapor growth device
JPS5623736A (en) Vapor phase growing method
JPS5621330A (en) Method of dry etching
JPS6439379A (en) Method and device for producing thin film forming parts
JPS57136932A (en) Photochemical reaction device
JPS56158143A (en) Reduced pressure type vapor phase growing device
JPS5471577A (en) Production of semiconductor device
JPS5726441A (en) Cvd method and device therefor
JPS54139478A (en) Pressing/heating process method for semiconductor substrate
JPS57114228A (en) Reaction boat for depressurized cvd device
JPS5518077A (en) Device for growing film under gas
JPH04165621A (en) Method and apparatus for forming oxide film
JPS55140233A (en) Chemical gaseous-phase growing device
JPS6411976A (en) Plasma cvd device
JPS544571A (en) Plasma treating apparatus