JPS5713746A - Vapor-phase growing apparatus - Google Patents
Vapor-phase growing apparatusInfo
- Publication number
- JPS5713746A JPS5713746A JP8864680A JP8864680A JPS5713746A JP S5713746 A JPS5713746 A JP S5713746A JP 8864680 A JP8864680 A JP 8864680A JP 8864680 A JP8864680 A JP 8864680A JP S5713746 A JPS5713746 A JP S5713746A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- reaction
- vapor
- reaction gas
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a vapor-phase growing apparatus which has high film forming speed at a low temperature by providing a plasma generator at the inlet side of a reaction tube having a reaction gas inlet and an exhaust port, activating in advance the reaction gas at the generator and then supplying it to a reactor at the exhaust port side. CONSTITUTION:A wafer 11 is inserted into a reactor 5 in a reaction tube 1, and the tube is then evacuated. A heater 4 of the reactor is controlled to set the reaction temperature at 400 deg.C, a reaction gas of monosilane and ammonia is introduced from a reaction gas inlet 2, is activated at a plasma generator 10 between plasma generating electrodes 8 and 9, and is flowed to the reactor. An Si3N4 film is grown at the rate of 50-150Angstrom /min on the surface of the wafer 11. Since the reaction temperature is thus low, no defect occurs even at the wafer of large bore, and the vapor-phase film growing time can be shortened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8864680A JPS5713746A (en) | 1980-06-30 | 1980-06-30 | Vapor-phase growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8864680A JPS5713746A (en) | 1980-06-30 | 1980-06-30 | Vapor-phase growing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5713746A true JPS5713746A (en) | 1982-01-23 |
Family
ID=13948577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8864680A Pending JPS5713746A (en) | 1980-06-30 | 1980-06-30 | Vapor-phase growing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5713746A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100515A (en) * | 1982-11-30 | 1984-06-09 | Seisan Gijutsu Shinko Kyokai | Thin film generating device |
JPS63143809A (en) * | 1986-12-08 | 1988-06-16 | Mitsui Toatsu Chem Inc | Equipment for forming thin film |
JPS63143807A (en) * | 1986-12-08 | 1988-06-16 | Mitsui Toatsu Chem Inc | Film forming equipment |
JPS63143808A (en) * | 1986-12-08 | 1988-06-16 | Mitsui Toatsu Chem Inc | Thin film forming equipment |
JPH08312461A (en) * | 1995-05-08 | 1996-11-26 | Lg Electronics Inc | Combustion apparatus for stirling engine |
-
1980
- 1980-06-30 JP JP8864680A patent/JPS5713746A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100515A (en) * | 1982-11-30 | 1984-06-09 | Seisan Gijutsu Shinko Kyokai | Thin film generating device |
JPS63143809A (en) * | 1986-12-08 | 1988-06-16 | Mitsui Toatsu Chem Inc | Equipment for forming thin film |
JPS63143807A (en) * | 1986-12-08 | 1988-06-16 | Mitsui Toatsu Chem Inc | Film forming equipment |
JPS63143808A (en) * | 1986-12-08 | 1988-06-16 | Mitsui Toatsu Chem Inc | Thin film forming equipment |
JPH08312461A (en) * | 1995-05-08 | 1996-11-26 | Lg Electronics Inc | Combustion apparatus for stirling engine |
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