JPS6439379A - Method and device for producing thin film forming parts - Google Patents

Method and device for producing thin film forming parts

Info

Publication number
JPS6439379A
JPS6439379A JP19535087A JP19535087A JPS6439379A JP S6439379 A JPS6439379 A JP S6439379A JP 19535087 A JP19535087 A JP 19535087A JP 19535087 A JP19535087 A JP 19535087A JP S6439379 A JPS6439379 A JP S6439379A
Authority
JP
Japan
Prior art keywords
temp
gas
thin film
substrate
gas decomposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19535087A
Other languages
Japanese (ja)
Other versions
JPH0248627B2 (en
Inventor
Takeshi Miura
Yukihiro Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to JP19535087A priority Critical patent/JPH0248627B2/en
Publication of JPS6439379A publication Critical patent/JPS6439379A/en
Publication of JPH0248627B2 publication Critical patent/JPH0248627B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To control the thickness and quality of the vapor-deposited film as desired by locally heating a gas decomposing member provided in a reaction chamber by a laser beam, and regulating the temp. distribution of the member. CONSTITUTION:Gaseous methane and gaseous hydrogen are supplied into the reaction vessel 10 from gas cylinders 18 through a pipe 16, sucked by a pump 24, and discharged from a gas exhaust port 14. The gaseous reactants introduced at this time are converted into plasma by the action of a coil 28, and the plasma is passed through the gas decomposing member 36. The gas decomposing member 36 is wholly heated to a prescribed temp., and then partially irradiated by the beam from a laser beam source 40 to keep the prescribed part at a high temp. As a result, a thicker film is vapor-deposited on the surface of the substrate 33 placed on a substrate holder 32 as the temp. of the gas decomposing member 36 is increased, and the thickness distribution of the thin film on the substrate 33 can be optionally controlled.
JP19535087A 1987-08-06 1987-08-06 HAKUMAKUKEISEIBUHINNOSEIZOHOHOOYOBISOCHI Expired - Lifetime JPH0248627B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19535087A JPH0248627B2 (en) 1987-08-06 1987-08-06 HAKUMAKUKEISEIBUHINNOSEIZOHOHOOYOBISOCHI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19535087A JPH0248627B2 (en) 1987-08-06 1987-08-06 HAKUMAKUKEISEIBUHINNOSEIZOHOHOOYOBISOCHI

Publications (2)

Publication Number Publication Date
JPS6439379A true JPS6439379A (en) 1989-02-09
JPH0248627B2 JPH0248627B2 (en) 1990-10-25

Family

ID=16339707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19535087A Expired - Lifetime JPH0248627B2 (en) 1987-08-06 1987-08-06 HAKUMAKUKEISEIBUHINNOSEIZOHOHOOYOBISOCHI

Country Status (1)

Country Link
JP (1) JPH0248627B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188229A (en) * 1991-04-05 1993-02-23 International Paper Company Compact disc package
WO2003023842A1 (en) * 2001-09-10 2003-03-20 Kabushiki Kaisha Watanabe Shoko Method and apparatus for forming low permittivity film and electronic device using the film
JP2005320585A (en) * 2004-05-10 2005-11-17 Nippon Itf Kk Film whose wettability is controlled, method for forming the same and wettability-controlled film-coated article
JP2013534275A (en) * 2010-07-30 2013-09-02 ディアロテック Method of synthesizing materials, in particular diamond, by chemical vapor deposition and apparatus for applying the method
WO2019039533A1 (en) * 2017-08-25 2019-02-28 セントラル硝子株式会社 Method for manufacturing diamond substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188229A (en) * 1991-04-05 1993-02-23 International Paper Company Compact disc package
WO2003023842A1 (en) * 2001-09-10 2003-03-20 Kabushiki Kaisha Watanabe Shoko Method and apparatus for forming low permittivity film and electronic device using the film
JP2005320585A (en) * 2004-05-10 2005-11-17 Nippon Itf Kk Film whose wettability is controlled, method for forming the same and wettability-controlled film-coated article
JP2013534275A (en) * 2010-07-30 2013-09-02 ディアロテック Method of synthesizing materials, in particular diamond, by chemical vapor deposition and apparatus for applying the method
WO2019039533A1 (en) * 2017-08-25 2019-02-28 セントラル硝子株式会社 Method for manufacturing diamond substrate

Also Published As

Publication number Publication date
JPH0248627B2 (en) 1990-10-25

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