JPS57184213A - Vapor growth device for semiconductor - Google Patents

Vapor growth device for semiconductor

Info

Publication number
JPS57184213A
JPS57184213A JP6897081A JP6897081A JPS57184213A JP S57184213 A JPS57184213 A JP S57184213A JP 6897081 A JP6897081 A JP 6897081A JP 6897081 A JP6897081 A JP 6897081A JP S57184213 A JPS57184213 A JP S57184213A
Authority
JP
Japan
Prior art keywords
reactor
high frequency
work coil
vapor growth
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6897081A
Other languages
Japanese (ja)
Inventor
Harushige Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP6897081A priority Critical patent/JPS57184213A/en
Publication of JPS57184213A publication Critical patent/JPS57184213A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To improve remarkably evenness in growth film thickness and specific resistance distribution by a method wherein the pressure at a reactor is reduced and the frequency of the high frequency current on a work coil is controlled appropriately in a semiconductor vapor growth process. CONSTITUTION:This vapor growth device comprises a reactor 2 defined by a bell-jar 1, a heating plate 4 for mounting thereon a semiconductor substrate 3, a work coil 6 provided under the heating plate 4 and covered with a cover 5, a nozzle 8 for introducing reactive gas from a supply source 7 into the interior of the reactor 2, a high frequency oscillator 9 for supplying the high frequency current to the work coil 6 and an exhaust port 11 provided in a base plate 10. Further, a means 14 connected through the exhaust port 11 and tube 13 to the reactor 2 and which serves to control the pressure within the reactor 2 from several to 300 Torr and a means 15 to control the oscillation frequency of the high frequency oscillator 9 under 100KHz are provided. According to the constitution, generation of plusma can be avoided and a growth film with high quality be also formed.
JP6897081A 1981-05-08 1981-05-08 Vapor growth device for semiconductor Pending JPS57184213A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6897081A JPS57184213A (en) 1981-05-08 1981-05-08 Vapor growth device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6897081A JPS57184213A (en) 1981-05-08 1981-05-08 Vapor growth device for semiconductor

Publications (1)

Publication Number Publication Date
JPS57184213A true JPS57184213A (en) 1982-11-12

Family

ID=13389032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6897081A Pending JPS57184213A (en) 1981-05-08 1981-05-08 Vapor growth device for semiconductor

Country Status (1)

Country Link
JP (1) JPS57184213A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410528A (en) * 1990-04-27 1992-01-14 Shin Etsu Handotai Co Ltd Vapor deposition device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24
JPS536392U (en) * 1976-06-30 1978-01-20
JPS5319181A (en) * 1976-08-06 1978-02-22 Hitachi Ltd Low pressure reaction apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24
JPS536392U (en) * 1976-06-30 1978-01-20
JPS5319181A (en) * 1976-08-06 1978-02-22 Hitachi Ltd Low pressure reaction apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410528A (en) * 1990-04-27 1992-01-14 Shin Etsu Handotai Co Ltd Vapor deposition device

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