JPS56102577A - Method and device for forming thin film - Google Patents

Method and device for forming thin film

Info

Publication number
JPS56102577A
JPS56102577A JP495480A JP495480A JPS56102577A JP S56102577 A JPS56102577 A JP S56102577A JP 495480 A JP495480 A JP 495480A JP 495480 A JP495480 A JP 495480A JP S56102577 A JPS56102577 A JP S56102577A
Authority
JP
Japan
Prior art keywords
gas
reaction tube
thin film
flow
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP495480A
Other languages
Japanese (ja)
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP495480A priority Critical patent/JPS56102577A/en
Publication of JPS56102577A publication Critical patent/JPS56102577A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a favourable amorphous silicon thin film with controlling a rate of ionization by introducing the preliminarliy ionized gas in a preionization chamber into a main reaction vessel. CONSTITUTION:A substrate 6 is heated by a heater 5 in a reaction tube 1. Nonionized mixed gas of SiH3 gas, PH3, B2H6, CF4 diluted respectively by hydrogen from cylinders 15, 16, 17, 18 is fed from a gas supply port 19 into the reaction tube 1 by means of a mass-flow controller 20. On the other hand, in a preionization chamber 10, the mixed gas is inonized by the plasma generated by a high-frequency coil 9, and scattered inside of the reaction tube 1 by a sprayer 8. At the same time, in the reaction tube 1, high-frequency power is supplied through plate electrodes set in parallel by a high-frequency electric source 4, generating plasma. And flow rates of gas entering the reaction tube 1 and preionization chamber 10 are made to have an optimum ratio of flow rate by mass-flow controllers 20, 21, thus resulting in the effective utilization of the gas and formation of the desirable thin film.
JP495480A 1980-01-18 1980-01-18 Method and device for forming thin film Pending JPS56102577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP495480A JPS56102577A (en) 1980-01-18 1980-01-18 Method and device for forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP495480A JPS56102577A (en) 1980-01-18 1980-01-18 Method and device for forming thin film

Publications (1)

Publication Number Publication Date
JPS56102577A true JPS56102577A (en) 1981-08-17

Family

ID=11597963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP495480A Pending JPS56102577A (en) 1980-01-18 1980-01-18 Method and device for forming thin film

Country Status (1)

Country Link
JP (1) JPS56102577A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149465A (en) * 1981-03-12 1982-09-16 Canon Inc Formation of accumulated film
JPS59131511A (en) * 1983-01-17 1984-07-28 Zenko Hirose Formation of film of amorphous silicon
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
FR2545984A1 (en) * 1983-05-11 1984-11-16 Semiconductor Res Found METHOD FOR DRY FABRICATION OF A SEMICONDUCTOR DEVICE BY PHOTOCHEMICAL REACTION AND APPARATUS FOR CARRYING OUT SAID METHOD
FR2555614A1 (en) * 1983-08-16 1985-05-31 Canon Kk PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION
JPS60131970A (en) * 1983-12-20 1985-07-13 Canon Inc Formation of deposited film
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS6188522A (en) * 1984-10-08 1986-05-06 Canon Inc Formation of deposited film
JPS61238965A (en) * 1985-04-16 1986-10-24 Matsushita Electric Ind Co Ltd Method and apparatus for forming thin film
JPS6286166A (en) * 1985-10-14 1987-04-20 Semiconductor Energy Lab Co Ltd Formation of thin film
JPS6289874A (en) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd Formation of thin film
EP1118691A1 (en) * 2000-01-20 2001-07-25 Micro C Technologies, Inc. Reactor with remote plasma system and method of processing a semiconductor substrate
EP1155164A4 (en) * 1999-01-05 2005-04-06 Ronal Systems Corp In situ chemical generator and method
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7563328B2 (en) * 2001-01-19 2009-07-21 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
CN114645261A (en) * 2020-12-17 2022-06-21 新奥科技发展有限公司 Pretreatment device for boronizing internal chamber of fusion device and application thereof

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362591B2 (en) * 1981-03-12 1988-12-02
JPS57149465A (en) * 1981-03-12 1982-09-16 Canon Inc Formation of accumulated film
JPS59131511A (en) * 1983-01-17 1984-07-28 Zenko Hirose Formation of film of amorphous silicon
JPH0411626B2 (en) * 1983-01-17 1992-03-02 Zenko Hirose
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
FR2545984A1 (en) * 1983-05-11 1984-11-16 Semiconductor Res Found METHOD FOR DRY FABRICATION OF A SEMICONDUCTOR DEVICE BY PHOTOCHEMICAL REACTION AND APPARATUS FOR CARRYING OUT SAID METHOD
FR2555614A1 (en) * 1983-08-16 1985-05-31 Canon Kk PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION
JPS60131970A (en) * 1983-12-20 1985-07-13 Canon Inc Formation of deposited film
JPH0517312B2 (en) * 1983-12-20 1993-03-08 Canon Kk
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS6188522A (en) * 1984-10-08 1986-05-06 Canon Inc Formation of deposited film
JPS61238965A (en) * 1985-04-16 1986-10-24 Matsushita Electric Ind Co Ltd Method and apparatus for forming thin film
JPS6289874A (en) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd Formation of thin film
JPS6286166A (en) * 1985-10-14 1987-04-20 Semiconductor Energy Lab Co Ltd Formation of thin film
JPH0474431B2 (en) * 1985-10-14 1992-11-26
JPH0474432B2 (en) * 1985-10-14 1992-11-26
US7033952B2 (en) 1999-01-05 2006-04-25 Berg & Berg Enterprises, Llc Apparatus and method using a remote RF energized plasma for processing semiconductor wafers
EP1155164A4 (en) * 1999-01-05 2005-04-06 Ronal Systems Corp In situ chemical generator and method
KR100755122B1 (en) * 1999-01-05 2007-09-04 버그 앤 버그 엔터프라이즈, 엘엘씨 In situ chemical generator and method
US6783627B1 (en) * 2000-01-20 2004-08-31 Kokusai Semiconductor Equipment Corporation Reactor with remote plasma system and method of processing a semiconductor substrate
EP1118691A1 (en) * 2000-01-20 2001-07-25 Micro C Technologies, Inc. Reactor with remote plasma system and method of processing a semiconductor substrate
US7563328B2 (en) * 2001-01-19 2009-07-21 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
CN114645261A (en) * 2020-12-17 2022-06-21 新奥科技发展有限公司 Pretreatment device for boronizing internal chamber of fusion device and application thereof
CN114645261B (en) * 2020-12-17 2024-04-09 新奥科技发展有限公司 Pretreatment device for boride of internal cavity of fusion device and application thereof

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