JPS6421915A - Apparatus and method for forming thin film - Google Patents
Apparatus and method for forming thin filmInfo
- Publication number
- JPS6421915A JPS6421915A JP17700287A JP17700287A JPS6421915A JP S6421915 A JPS6421915 A JP S6421915A JP 17700287 A JP17700287 A JP 17700287A JP 17700287 A JP17700287 A JP 17700287A JP S6421915 A JPS6421915 A JP S6421915A
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- thin film
- treated
- substrate
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a thin film simply after a spontaneously grown oxide film is removed, by adding a function, which can heat a lower electrode to a specified temperature, into a plasma treating apparatus comprising an upper electrode for supplying high frequency electric power, and the lower electrode, on which a substrate to be treated is mounted. CONSTITUTION:A plasma treating apparatus comprises the following parts: an upper electrode 8, which supplies high frequency electric power; and a lower electrode 10, on which a substrate 9 to be treated that is positioned in parallel with the upper electrode 8 is mounted. A function, which can heat the lower electrode 10 to 900 deg.C, is added into the plasma treating apparatus. A thin film is formed as follows. The substrate 9 to be treated is mounted on the lower electrode 10. Then, hydrogen is introduced into a reaction container 3. The high frequency power is supplied to the upper electrode 8. Hydrogen plasma is generated. A very thin spontaneously grown oxide on the surface of the substrate 9 to be treated is reduced and removed. Thereafter, a specified gas is introduced at a specified temperature, and the desired thin film is formed. As a means for heating said lower electrode 10, e.g., a heater 13, which is embedded in the lower electrode 10, is used and resistance heating is performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17700287A JPS6421915A (en) | 1987-07-17 | 1987-07-17 | Apparatus and method for forming thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17700287A JPS6421915A (en) | 1987-07-17 | 1987-07-17 | Apparatus and method for forming thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421915A true JPS6421915A (en) | 1989-01-25 |
Family
ID=16023457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17700287A Pending JPS6421915A (en) | 1987-07-17 | 1987-07-17 | Apparatus and method for forming thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421915A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072468A (en) * | 2003-08-27 | 2005-03-17 | Koyo Thermo System Kk | Heat treatment apparatus of semiconductor wafer |
-
1987
- 1987-07-17 JP JP17700287A patent/JPS6421915A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072468A (en) * | 2003-08-27 | 2005-03-17 | Koyo Thermo System Kk | Heat treatment apparatus of semiconductor wafer |
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