JPS6421915A - Apparatus and method for forming thin film - Google Patents

Apparatus and method for forming thin film

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Publication number
JPS6421915A
JPS6421915A JP17700287A JP17700287A JPS6421915A JP S6421915 A JPS6421915 A JP S6421915A JP 17700287 A JP17700287 A JP 17700287A JP 17700287 A JP17700287 A JP 17700287A JP S6421915 A JPS6421915 A JP S6421915A
Authority
JP
Japan
Prior art keywords
lower electrode
thin film
treated
substrate
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17700287A
Other languages
Japanese (ja)
Inventor
Shinpei Iijima
Kiyoto Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17700287A priority Critical patent/JPS6421915A/en
Publication of JPS6421915A publication Critical patent/JPS6421915A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To form a thin film simply after a spontaneously grown oxide film is removed, by adding a function, which can heat a lower electrode to a specified temperature, into a plasma treating apparatus comprising an upper electrode for supplying high frequency electric power, and the lower electrode, on which a substrate to be treated is mounted. CONSTITUTION:A plasma treating apparatus comprises the following parts: an upper electrode 8, which supplies high frequency electric power; and a lower electrode 10, on which a substrate 9 to be treated that is positioned in parallel with the upper electrode 8 is mounted. A function, which can heat the lower electrode 10 to 900 deg.C, is added into the plasma treating apparatus. A thin film is formed as follows. The substrate 9 to be treated is mounted on the lower electrode 10. Then, hydrogen is introduced into a reaction container 3. The high frequency power is supplied to the upper electrode 8. Hydrogen plasma is generated. A very thin spontaneously grown oxide on the surface of the substrate 9 to be treated is reduced and removed. Thereafter, a specified gas is introduced at a specified temperature, and the desired thin film is formed. As a means for heating said lower electrode 10, e.g., a heater 13, which is embedded in the lower electrode 10, is used and resistance heating is performed.
JP17700287A 1987-07-17 1987-07-17 Apparatus and method for forming thin film Pending JPS6421915A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17700287A JPS6421915A (en) 1987-07-17 1987-07-17 Apparatus and method for forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17700287A JPS6421915A (en) 1987-07-17 1987-07-17 Apparatus and method for forming thin film

Publications (1)

Publication Number Publication Date
JPS6421915A true JPS6421915A (en) 1989-01-25

Family

ID=16023457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17700287A Pending JPS6421915A (en) 1987-07-17 1987-07-17 Apparatus and method for forming thin film

Country Status (1)

Country Link
JP (1) JPS6421915A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072468A (en) * 2003-08-27 2005-03-17 Koyo Thermo System Kk Heat treatment apparatus of semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072468A (en) * 2003-08-27 2005-03-17 Koyo Thermo System Kk Heat treatment apparatus of semiconductor wafer

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