JP2005072468A - Heat treatment apparatus of semiconductor wafer - Google Patents

Heat treatment apparatus of semiconductor wafer Download PDF

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JP2005072468A
JP2005072468A JP2003303070A JP2003303070A JP2005072468A JP 2005072468 A JP2005072468 A JP 2005072468A JP 2003303070 A JP2003303070 A JP 2003303070A JP 2003303070 A JP2003303070 A JP 2003303070A JP 2005072468 A JP2005072468 A JP 2005072468A
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wafer
heat treatment
processing chamber
induction heating
heating body
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Satoyuki Ishibashi
智行 石橋
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JTEKT Thermo Systems Corp
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Koyo Thermo Systems Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide the heat treatment apparatus of a semiconductor wafer with which heat treatment can be carried out at high temperature. <P>SOLUTION: Inside of a treatment chamber 2 consisting of a high thermal resistant member such as metal and capable of evacuating and filling in an atmosphere of treatment gas; an induction heating coil 3, and a heater 4 which is induction-heated by the induction heating coil 3 and which is formed in the state of a nearly flat cylinder so as to surround a wafer W, are provided. The heat treatment apparatus 1 of the semiconductor wafer houses the wafer W inside of this heater 4 to perform heat treatment of it. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体ウエハを熱処理するための処理装置に関するものである。   The present invention relates to a processing apparatus for heat-treating a semiconductor wafer.

従来から、半導体ウエハ（以下ウエハともいう）を熱処理するための半導体ウエハの熱処理装置としては、ウエハが収容される処理室と、この処理室の外側に設けられた熱線供給手段とを備えた縦型熱処理装置が知られている（例えば特許文献１参照）。これは、石英よりなる反応管の内部に、処理ガスを供給しつつ、その外周に設けられた抵抗加熱ヒータによりウエハを熱処理するものである。
また、ＳｉＣからなる加熱体の内周面にウエハを載置させた状態で、係る加熱体を誘導加熱するものも知られている（例えば特許文献２参照）。 2. Description of the Related Art Conventionally, as a semiconductor wafer heat treatment apparatus for heat treating a semiconductor wafer (hereinafter also referred to as a wafer), a vertical chamber provided with a processing chamber in which the wafer is accommodated and a heat ray supply means provided outside the processing chamber. A mold heat treatment apparatus is known (see, for example, Patent Document 1). In this method, a processing gas is supplied into a reaction tube made of quartz, and a wafer is heat-treated by a resistance heater provided on the outer periphery thereof.
In addition, there is also known one that performs induction heating of a heating body in a state where a wafer is placed on the inner peripheral surface of the heating body made of SiC (for example, see Patent Document 2).

特開平５−９０１８６号公報（図１）Japanese Patent Laid-Open No. 5-90186 (FIG. 1) 特開２００３−６８６６９号公報（図１）Japanese Patent Laid-Open No. 2003-68669 (FIG. 1)

近年ウエハの結晶欠陥を短時間で回復処理するために、より高い温度での熱処理が要求されてきている。しかしながら、従来から使用されてきた例えば特許文献１の熱処理装置では、ウエハを収容する処理室は石英製のものであることと、その処理室を取り囲んで断熱材が使用されていることから、それらの耐熱性の制約で１２００℃を超える熱処理には適さなかった。   In recent years, a heat treatment at a higher temperature has been required in order to recover a crystal defect of a wafer in a short time. However, in the heat treatment apparatus of Patent Document 1, which has been used conventionally, for example, the processing chamber for storing the wafer is made of quartz, and the heat insulating material is used surrounding the processing chamber. It was not suitable for heat treatment exceeding 1200 ° C. due to heat resistance restrictions.

また、特許文献２で使用されているＳｉＣは、急激な温度変化が生じる雰囲気下では、その強度が弱くなる傾向がある。したがって、急速に昇降温され、ウエハの大型化に伴い汎用される枚葉式熱処理措置には適さない。さらに、ウエハを加熱体の上に直接載置していることから、加熱体の温度分布がウエハに直接反映してしまい温度ムラが発生する。
本発明は、このような実情に鑑みてなされたものであり、高温での熱処理ができる半導体ウエハの熱処理装置を提供することを目的とする。 In addition, SiC used in Patent Document 2 tends to have a low strength in an atmosphere in which a rapid temperature change occurs. Therefore, the temperature is rapidly raised and lowered, and it is not suitable for a single wafer heat treatment measure which is widely used with an increase in wafer size. Further, since the wafer is directly placed on the heating body, the temperature distribution of the heating body is directly reflected on the wafer, resulting in temperature unevenness.
The present invention has been made in view of such circumstances, and an object thereof is to provide a semiconductor wafer heat treatment apparatus capable of performing heat treatment at a high temperature.

上記目的を達成すべく、本発明は次の技術的手段を講じた。
すなわち、本発明の半導体ウエハの熱処理装置は、被処理物が１枚ずつ収容可能とされかつ当該被処理物を取り囲むように略扁平な筒状に形成されている誘導加熱可能な加熱体と、この加熱体の外側に設けられた当該加熱体を誘導加熱する誘導加コイルと、加熱体と誘導加熱コイルが収容されるとともに密閉可能とされ、かつ石英を超える耐熱性を有する高耐熱部材からなる処理室と、この処理室を真空にする真空排気手段と、当該処理室に処理ガスを供給するガス供給手段と、が備えられていることを特徴とするものである。
上記の半導体ウエハの熱処理装置によれば、処理室の内側に石英部材やそれを取り囲む断熱材を設けていないので、それらの耐熱性の制約がなくなる。加えて、処理室の構成部材を石英を超える耐熱性を有する高耐熱性部材で構成しているので、石英の耐熱性を超える高温域（例えば１２００℃を超える温度）でのウエハの熱処理が可能となる。また、被処理物を誘導加熱される加熱体で収容することで、真空状態であっても輻射熱により当該被処理物を効率よく加熱することが可能となっている。 In order to achieve the above object, the present invention takes the following technical means.
That is, the semiconductor wafer heat treatment apparatus according to the present invention is capable of containing the objects to be processed one by one, and a heating body capable of induction heating formed in a substantially flat cylindrical shape so as to surround the objects to be processed; The induction heating coil provided on the outer side of the heating body is made of an induction heating coil for induction heating, the heating body and the induction heating coil are housed and can be sealed, and has a high heat resistance member having heat resistance exceeding quartz. A processing chamber, an evacuation unit that evacuates the processing chamber, and a gas supply unit that supplies a processing gas to the processing chamber are provided.
According to the semiconductor wafer heat treatment apparatus described above, the quartz member and the heat insulating material surrounding the quartz member are not provided inside the processing chamber, so that there is no restriction on the heat resistance thereof. In addition, since the processing chamber components are made of high heat-resistant materials that have heat resistance exceeding that of quartz, wafers can be heat-treated in a high temperature range (for example, temperatures exceeding 1200 ° C.) that exceed the heat resistance of quartz. It becomes. Further, by accommodating the object to be processed with a heating body that is induction-heated, the object to be processed can be efficiently heated by radiant heat even in a vacuum state.

また、真空排気手段とガス供給手段によりプロセスの要求に応じた種々の熱処理を可能としている。さらに、低温域（例えば８００℃以下）では、処理室内をガス供給手段によりガス雰囲気とし、その温度を超えたあたりから当該処理室内を真空排気手段により真空状態に切り替えることにより、熱損失を抑制し低温域から高温域にわたり高い加熱効率を維持するといった運転も可能としている。また、加熱体が被処理物を取り囲むように略扁平な筒状に形成されていることから、加熱体からウエハ全体に向けて、熱を均等に放射（輻射）でき、当該ウエハ全体を均一にムラなく熱処理することができる。
さらに、上記本発明において、前記処理室を形成する壁面と誘導加熱コイルとの間に、加熱体からの輻射を遮る輻射シールドが設けられていることが好ましい。これにより、輻射熱の処理室壁への散逸を抑え、ウエハをより効率良く加熱することができる。
また、上記本発明において、少なくとも前記誘導加熱コイルの外表面にセラミックスコーティングが施されていることが好ましい。これにより、絶縁体層が形成され誘導加熱コイルによりウエハ表面が金属汚染されるのを抑制することができるとともに、処理室との間の真空中での放電を有効に防止できる。 In addition, various heat treatments according to process requirements are made possible by the evacuation means and the gas supply means. Further, in a low temperature range (for example, 800 ° C. or lower), the processing chamber is made a gas atmosphere by the gas supply means, and the processing chamber is switched to a vacuum state by the vacuum exhaust means from around that temperature, thereby suppressing heat loss. Operation that maintains high heating efficiency from a low temperature range to a high temperature range is also possible. Further, since the heating body is formed in a substantially flat cylindrical shape so as to surround the workpiece, heat can be radiated (radiated) uniformly from the heating body to the entire wafer, and the entire wafer can be evenly distributed. Heat treatment can be performed without unevenness.
Furthermore, in the said invention, it is preferable that the radiation shield which shields the radiation from a heating body is provided between the wall surface which forms the said process chamber, and the induction heating coil. Thereby, dissipation of radiant heat to the processing chamber wall can be suppressed, and the wafer can be heated more efficiently.
Moreover, in the said invention, it is preferable that the ceramic coating is given to the outer surface of the said induction heating coil at least. Thereby, the insulator layer is formed and the wafer surface can be prevented from being contaminated with metal by the induction heating coil, and discharge in a vacuum with the processing chamber can be effectively prevented.

本発明によれば、高温での熱処理ができる。   According to the present invention, heat treatment can be performed at a high temperature.

以下、本発明の実施の形態を図面に基づいて説明する。図１（ａ）は本発明の一実施形態に係る半導体ウエハの熱処理装置１の構成を示す正面断面図を示し、図１（ｂ）はその側面断面図である。本実施形態に係る半導体ウエハの熱処理装置１は、例えば円盤状のウエハＷの結晶欠陥の回復処理等をするための熱処理に用いられるものである。この半導体ウエハの熱処理装置１は、ウエハＷを収容する加熱体４と、この加熱体４の外側に設けられた誘導加熱コイル３と、当該加熱体４と誘導加熱コイル３が収容されるとともに密閉可能とされた処理室２とが備えられ、さらに誘導加熱コイル３と処理室壁の間に設けられた輻射シールド９とを備えている。さらに、ガス供給手段として、ガス供給口５に接続され処理ガスを供給するガス供給装置（図示せず）を備え、さらに真空排気手段として、真空排気口６に接続された真空排気装置（図示せず）を備えている。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1A is a front sectional view showing a configuration of a semiconductor wafer heat treatment apparatus 1 according to an embodiment of the present invention, and FIG. 1B is a side sectional view thereof. The semiconductor wafer heat treatment apparatus 1 according to the present embodiment is used for heat treatment for performing crystal defect recovery processing or the like of a disk-shaped wafer W, for example. The semiconductor wafer heat treatment apparatus 1 includes a heating body 4 that accommodates a wafer W, an induction heating coil 3 provided outside the heating body 4, and the heating body 4 and the induction heating coil 3 are accommodated and sealed. The processing chamber 2 is provided, and further includes an induction heating coil 3 and a radiation shield 9 provided between the processing chamber walls. Further, a gas supply device (not shown) connected to the gas supply port 5 for supplying a processing gas is provided as a gas supply means, and a vacuum exhaust device (not shown) connected to the vacuum exhaust port 6 as a vacuum exhaust means. )).

本実施形態に係る半導体ウエハの熱処理装置１は、その内側からウエハＷを収容する加熱体４と、この加熱体４との間に隙間を空けて当該加熱体４の周囲全体を取り囲んで配置される誘導加熱コイル３と、この誘導加熱コイル３のさらに外側で当該誘導加熱コイル３との間に隙間を空けて取り囲むようにして配置される輻射シールド９と、当該加熱体４と、誘導加熱コイル３と、輻射シールド９とを収容する、処理室２とを備えている。
そして、これらはすべて、図１（ａ）に示すように、左側（図１（ｂ）左側）を開口方向とした同軸的に、それぞれが上下両側に平坦部と、この上下両側の平坦部をその左右（図１（ａ）左右）で繋ぐ湾曲部とを有し、軸方向周りで断面略扁平な形状で形成されている。そして、これら各構成部材は、それぞれが隙間を空けつつ配置されている。
処理室２は、上下両側に平坦部と、この上下両側の平坦部を繋ぐ左右（図１（ａ）左右）の湾曲部とを備えた、略扁平な筒状に形成されている。この処理室２は、例えばステンレス鋼のような金属製の素材で構成される水冷ジャケット付き真空容器で、その内部は、ウエハＷを１枚ずつ収容でき、さらに誘導加熱体３等を具備できる容積が確保されている。 The semiconductor wafer heat treatment apparatus 1 according to the present embodiment is disposed so as to surround the entire periphery of the heating body 4 with a gap between the heating body 4 containing the wafer W from the inside and the heating body 4. The induction heating coil 3, the radiation shield 9 disposed so as to surround the induction heating coil 3 on the outer side of the induction heating coil 3, the heating body 4, the induction heating coil 3 and a processing chamber 2 that accommodates the radiation shield 9.
As shown in FIG. 1 (a), all of these are coaxial with the left side (FIG. 1 (b) left side) as the opening direction, each having a flat portion on both the upper and lower sides and flat portions on both the upper and lower sides. It has a curved portion connected at the left and right (left and right in FIG. 1 (a)), and is formed in a shape that is substantially flat in cross section around the axial direction. Each of these constituent members is arranged with a gap therebetween.
The processing chamber 2 is formed in a substantially flat cylindrical shape including flat portions on both upper and lower sides and left and right (left and right curved portions in FIG. 1A) connecting the flat portions on both upper and lower sides. This processing chamber 2 is a vacuum vessel with a water cooling jacket made of a metal material such as stainless steel, and the inside thereof can accommodate one wafer W at a time, and can further include an induction heating body 3 and the like. Is secured.

また、処理室２の一端側（図１（ｂ）では左側）にウエハを搬出入するための開口部２ａを有し、他端側（図１（ｂ）では右側）に内部を監視する監視窓２ｂを有している。処理室２の上部にはガス供給口５が備えられ、処理室２の下部には真空排気口６が備えられている。また、処理室２の上部から加熱体４の外周面の間近まで、雰囲気温度を測定する熱電対７が配設されている。さらに、開口部２ａ、ガス供給口５、真空排気口６には、処理室２を密閉空間にするための蓋体や弁体等（図示せず）が適宜設けられ、処理室２内を処理ガス雰囲気から、真空状態へ切り替え可能とされている。   In addition, the processing chamber 2 has an opening 2a for loading / unloading a wafer on one end side (left side in FIG. 1B) and monitoring the inside on the other end side (right side in FIG. 1B). A window 2b is provided. A gas supply port 5 is provided in the upper portion of the processing chamber 2, and a vacuum exhaust port 6 is provided in the lower portion of the processing chamber 2. Further, a thermocouple 7 for measuring the atmospheric temperature is disposed from the upper part of the processing chamber 2 to the vicinity of the outer peripheral surface of the heating body 4. Further, the opening 2a, the gas supply port 5 and the vacuum exhaust port 6 are appropriately provided with a lid, a valve body or the like (not shown) for making the processing chamber 2 a sealed space, and the inside of the processing chamber 2 is processed. The gas atmosphere can be switched to a vacuum state.

ウエハＷの加熱は、誘導加熱式のものが採用され、本実施形態にかかる半導体ウエハの熱処理装置１は、誘導加熱コイル３と、この誘導加熱コイル３により誘導加熱される加熱体４と、誘導加熱コイル３に接続された高周波電流供給手段（図示せず）とを有している。
この誘導加熱コイル３は、図１（ａ）に示すように、周方向に巻回されており、銅等の材料で作製された断面四角形の中空管とされ、管内に冷却水を循環させている。 The wafer W is heated by induction heating. The semiconductor wafer heat treatment apparatus 1 according to this embodiment includes an induction heating coil 3, a heating body 4 induction-heated by the induction heating coil 3, an induction heating coil 3, and an induction heating coil 3. High-frequency current supply means (not shown) connected to the heating coil 3.
As shown in FIG. 1 (a), the induction heating coil 3 is wound in the circumferential direction, and is a hollow tube having a square cross section made of a material such as copper. Circulating cooling water is circulated in the tube. ing.

加熱体４は、グラファイトなどの熱伝導率が大きい導電性材料の表面に高純度炭化ケイ素（ＳｉＣ）のＣＶＤ（化学蒸着法）コーティングを施したものにより構成されている。加熱体４は、前記誘導加熱コイル３の内方に離間して設けられ、ウエハＷを取り囲むように略扁平な筒状に形成されている。具体的には、この加熱体４は、ウエハＷの上下両面全体に近接して沿う上下両側の平坦部と、この上下両側の平坦部をその左右（図１（ａ）左右）で繋いでいる湾曲部とを有している。このような形状とすることで、加熱体４からの熱線がウエハＷの両面に効率よく照射されるようにしている。そして、ウエハＷは、互いに対向する加熱体４の前記平坦部の対向面間に、かつ当該対向面と略平行に設置されている。
高周波電流供給手段は、処理室２外に設置されており、高周波（３０〜５０ｋＨｚ程度）の交流電源を備える他、軸方向に配列された誘導加熱コイル３の所定位置への出力制御が行えるように構成されている。 The heating element 4 is constituted by a high-purity silicon carbide (SiC) CVD (chemical vapor deposition) coating on the surface of a conductive material having a high thermal conductivity such as graphite. The heating body 4 is provided to be separated from the inside of the induction heating coil 3 and is formed in a substantially flat cylindrical shape so as to surround the wafer W. Specifically, the heating body 4 connects the flat portions on both the upper and lower sides along the entire upper and lower surfaces of the wafer W and the flat portions on the upper and lower sides on the left and right sides (FIG. 1 (a) left and right). And a curved portion. By setting it as such a shape, the heat ray from the heating body 4 is efficiently irradiated to both surfaces of the wafer W. FIG. The wafer W is disposed between the opposed surfaces of the flat portion of the heating body 4 facing each other and substantially parallel to the opposed surface.
The high-frequency current supply means is installed outside the processing chamber 2 and is equipped with a high-frequency (about 30 to 50 kHz) AC power supply so that output control to a predetermined position of the induction heating coils 3 arranged in the axial direction can be performed. It is configured.

筒状の加熱体４の内周面の下側平坦部上には、ウエハＷを当該加熱体４との間に隙間を空けつつウエハＷを支持するための支持部材８が備えられている。この支持部材８でウエハＷを支持して熱処理が行われる。
誘導加熱コイル３と処理室壁との間には、これらと離間させた状態で当該誘導加熱コイル３の外側を取り巻くように例えば高い反射率の表面を有する耐火金属材料等の板、箔またはその積層体からなる輻射シールド９が設けられている。この輻射シールド９により、輻射熱の処理室壁への散逸を抑え、ウエハＷをより効率良く加熱することができる。
また、誘導加熱コイル３の表面には、セラミックスコーティングが施されている。これにより、誘導加熱コイル３によるウエハ表面の金属汚染を抑制することができるとともに、処理室との間の真空中での放電を有効に防止できる。 A support member 8 is provided on the lower flat portion of the inner peripheral surface of the cylindrical heating body 4 to support the wafer W while leaving a gap between the wafer W and the heating body 4. The support member 8 supports the wafer W and heat treatment is performed.
Between the induction heating coil 3 and the processing chamber wall, a plate, foil or the like made of a refractory metal material or the like having a highly reflective surface so as to surround the outside of the induction heating coil 3 in a state of being separated from these. A radiation shield 9 made of a laminate is provided. The radiation shield 9 can suppress the dissipation of radiant heat to the processing chamber wall and heat the wafer W more efficiently.
Further, a ceramic coating is applied to the surface of the induction heating coil 3. Thereby, metal contamination of the wafer surface by the induction heating coil 3 can be suppressed, and discharge in a vacuum with the processing chamber can be effectively prevented.

上記構成の半導体ウエハの熱処理装置１によるウエハＷの熱処理は、例えば次のようにして行われる。すなわち、図示しない高周波電流供給手段によって高周波電流が誘導加熱コイル３に供給されると、この誘導加熱コイル３から磁束（磁力線）が発生する。そして、この磁束が加熱体４を貫通すると、加熱体４に渦電流が発生し、この渦電流と加熱体４自体の電気抵抗とによりジュール熱が生じて、加熱体４が発熱する。その後、この加熱体４からの熱線により支持部材８に支持されているウエハＷが加熱される。
この際、処理室２内を真空排気して真空状態とすることにより、加熱体４から処理室壁への対流伝熱を抑えることができる。このため、本実施形態に係る半導体ウエハの熱処理装置１では、処理室２の内側に断熱材を設けていない。したがって、処理室内の塵の発生がないのは勿論のこととして、従来のような耐熱性の制約がなくなるとともに、高速な熱処理、特に冷却を可能としている。このことに加え、処理室２をステンレス鋼のような金属製の素材で構成しているので、石英の耐熱性を超える高温域（例えば１２００℃を超える温度）でウエハの熱処理が可能となっている。また、ウエハＷを誘導加熱される加熱体４で収容することで、真空状態であっても輻射熱により当該被処理物を効率よく加熱することが可能となっている。 The heat treatment of the wafer W by the semiconductor wafer heat treatment apparatus 1 configured as described above is performed, for example, as follows. That is, when a high frequency current is supplied to the induction heating coil 3 by a high frequency current supply means (not shown), a magnetic flux (lines of magnetic force) is generated from the induction heating coil 3. And when this magnetic flux penetrates the heating body 4, an eddy current will generate | occur | produce in the heating body 4, Joule heat will arise by this eddy current and the electrical resistance of heating body 4 itself, and the heating body 4 will generate | occur | produce heat. Thereafter, the wafer W supported on the support member 8 is heated by the heat rays from the heating body 4.
At this time, convection heat transfer from the heating body 4 to the processing chamber wall can be suppressed by evacuating the processing chamber 2 to a vacuum state. For this reason, in the semiconductor wafer heat treatment apparatus 1 according to the present embodiment, no heat insulating material is provided inside the processing chamber 2. Therefore, as well as the generation of dust in the processing chamber, there is no restriction on heat resistance as in the prior art, and high-speed heat treatment, particularly cooling is possible. In addition to this, since the processing chamber 2 is made of a metal material such as stainless steel, the wafer can be heat-treated in a high temperature range exceeding the heat resistance of quartz (for example, a temperature exceeding 1200 ° C.). Yes. In addition, by accommodating the wafer W with the heating body 4 that is induction-heated, it is possible to efficiently heat the object to be processed by radiant heat even in a vacuum state.

さらに、処理室２内は、ガス雰囲気と真空状態の切り替え可能となっているので、ウエハＷの加熱過程において、場合によっては、例えば約８００℃までは、ガス供給手段によってガス供給口５から雰囲気ガスを注入しつつウエハＷの熱処理を行う。そして、約８００℃を超えたあたりから、ガス供給を停止するとともにガス供給口５を閉塞し、密閉された処理室２内を真空排気手段によって真空排気口６から真空引きして当該処理室２を真空状態とすることも可能である。
即ち、プロセスが許容する場合には、低温域では、雰囲気ガスによる対流伝熱により効率よくウエハＷを加熱し、高温域では真空状態に切り替えて、加熱体４による輻射熱のみでウエハＷを効率よく加熱する。これにより、低温域から高温域まで、高い加熱効率を維持することができる。なお、雰囲気ガスには、酸素、空気等の酸化性ガスあるいは、アルゴン、窒素、その他各種の不活性ガスなどが使用される。 Furthermore, since the inside of the processing chamber 2 can be switched between a gas atmosphere and a vacuum state, in the heating process of the wafer W, depending on circumstances, the atmosphere may be supplied from the gas supply port 5 by the gas supply means up to about 800 ° C., for example. The wafer W is heat-treated while injecting gas. Then, when the temperature exceeds about 800 ° C., the gas supply is stopped and the gas supply port 5 is closed, and the inside of the sealed processing chamber 2 is evacuated from the vacuum exhaust port 6 by the vacuum evacuation means. Can be in a vacuum state.
That is, when the process permits, the wafer W is efficiently heated by convection heat transfer using the atmospheric gas in the low temperature range, and the wafer W is efficiently switched only to the radiant heat from the heating body 4 by switching to the vacuum state in the high temperature range. Heat. Thereby, high heating efficiency can be maintained from a low temperature range to a high temperature range. As the atmospheric gas, an oxidizing gas such as oxygen or air, argon, nitrogen, various other inert gases, or the like is used.

また、加熱体４は、ウエハＷを取り囲むように略扁平な筒状に形成されているので、当該加熱体４からウエハＷ全体に向けて、熱を均等に放射（輻射）することができる。これにより、ウエハＷ全体を均一にムラなく熱処理することができる。
このように、本実施形態に係る半導体ウエハの熱処理装置１は、１２００℃を超える高温での熱処理が可能で、かつ全温度域にわたり高い加熱効率を維持できる。さらに、ウエハＷ表面が金属汚染されるのを抑制しつつ、当該ウエハＷ全体を均一にムラなく熱処理できるので高品質のウエハＷを得ることができる。
このため、例えば従来の熱処理装置では困難であった、短時間でのウエハＷの結晶欠陥の回復処理が可能になる等の利点を有する。
なお、本発明は、前記した実施形態に限定されるものではない。例えば、被処理物の形状などを問わない。また、本実施形態では処理室２の断面（図１（ａ））を矩形状としてもよい。また、加熱体４等の材質は特に限定するものではない。 Further, since the heating body 4 is formed in a substantially flat cylindrical shape so as to surround the wafer W, heat can be evenly radiated (radiated) from the heating body 4 toward the entire wafer W. Thereby, the entire wafer W can be uniformly heat-treated.
As described above, the semiconductor wafer heat treatment apparatus 1 according to this embodiment can perform heat treatment at a high temperature exceeding 1200 ° C. and can maintain high heating efficiency over the entire temperature range. Further, since the entire surface of the wafer W can be uniformly heat-treated while suppressing the metal contamination of the surface of the wafer W, a high-quality wafer W can be obtained.
For this reason, there is an advantage that, for example, it is possible to recover crystal defects of the wafer W in a short time, which is difficult with a conventional heat treatment apparatus.
The present invention is not limited to the embodiment described above. For example, the shape of the object to be processed is not limited. In the present embodiment, the cross section of the processing chamber 2 (FIG. 1A) may be rectangular. Moreover, the material of the heating body 4 etc. is not specifically limited.

（ａ）は、本発明に係る半導体ウエハの熱処理装置の正面断面図であり、（ｂ）は、同側面断面図である。(A) is front sectional drawing of the heat processing apparatus of the semiconductor wafer concerning this invention, (b) is the same side sectional drawing.

符号の説明Explanation of symbols

１ 半導体ウエハの熱処理装置
２ 処理室
３ 誘導加熱コイル
４ 加熱体
５ ガス供給口
６ 真空排気口
８ 支持部材
９ 輻射シールド
Ｗ ウエハ DESCRIPTION OF SYMBOLS 1 Heat processing apparatus of semiconductor wafer 2 Processing chamber 3 Induction heating coil 4 Heating body 5 Gas supply port 6 Vacuum exhaust port 8 Support member 9 Radiation shield W Wafer

Claims (3)

被処理物が１枚ずつ収容可能とされかつ当該被処理物を取り囲むように略扁平な筒状に形成されている誘導加熱可能な加熱体と、この加熱体の外側に設けられた当該加熱体を誘導加熱する誘導加コイルと、加熱体と誘導加熱コイルが収容されるとともに密閉可能とされ、かつ石英を超える耐熱性を有する高耐熱部材からなる処理室と、この処理室を真空にする真空排気手段と、当該処理室に処理ガスを供給するガス供給手段と、が備えられていることを特徴とする半導体ウエハの熱処理装置。   A heating body capable of accommodating the objects to be processed one by one and formed in a substantially flat cylindrical shape so as to surround the objects to be processed, and the heating element provided outside the heating body An induction heating coil for induction heating, a processing chamber made of a highly heat-resistant member that contains a heating body and an induction heating coil and can be sealed, and has a heat resistance exceeding quartz, and a vacuum for evacuating the processing chamber A semiconductor wafer heat treatment apparatus, comprising: an exhaust means; and a gas supply means for supplying a processing gas to the processing chamber. 前記処理室を形成する壁面と誘導加熱コイルとの間に、加熱体からの輻射を遮る輻射シールドが設けられている請求項１に記載の半導体ウエハの熱処理装置。   The semiconductor wafer heat treatment apparatus according to claim 1, wherein a radiation shield that blocks radiation from the heating body is provided between a wall surface forming the processing chamber and the induction heating coil. 少なくとも前記誘導加熱コイルの表面にセラミックスコーティングが施されている請求項１または２に記載の半導体ウエハの熱処理装置。   The semiconductor wafer heat treatment apparatus according to claim 1, wherein at least a surface of the induction heating coil is provided with a ceramic coating.
JP2003303070A 2003-08-27 2003-08-27 Heat treatment apparatus of semiconductor wafer Pending JP2005072468A (en)

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JP2008159759A (en) * 2006-12-22 2008-07-10 Mitsui Eng & Shipbuild Co Ltd Heat treating method and apparatus using induction heating
JP2008243950A (en) * 2007-03-26 2008-10-09 Mitsui Eng & Shipbuild Co Ltd Thermal treatment equipment
JP2008251995A (en) * 2007-03-30 2008-10-16 Mitsui Eng & Shipbuild Co Ltd Temperature information acquiring device and heating system
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JP2010196931A (en) * 2009-02-24 2010-09-09 Showa Denko Kk Method of manufacturing heat exchanger
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JP2010196931A (en) * 2009-02-24 2010-09-09 Showa Denko Kk Method of manufacturing heat exchanger

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