JP2003077855A - Heat treatment apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which enables the processing of a large area with proper control and mass-productivity. SOLUTION: After a high-temperature region 5 sandwiched by hot walls 12 of the predetermined temperature (temperature depending on the object of heat treatment, for example 2,000 deg.C) in the range of 1,500 deg.C to 2,300 deg.C by heating the hot walls 12 is formed through supply of power source voltage to an RF coil 10, a jig 14 mounting a SiC wafer 3 is moved downward and is then stopped to maintain the SiC wafer 3 within the high-temperature region 5. The impurity activation process of SiC wafer 3 is then conducted. After the temperature has reached the target temperature, the jig 14 is lifted upward from the high-temperature region 5 while about 10 seconds have passed and is then cooled. Since the SiC wafer 3 quickly reaches the heat treatment temperature with heat radiation from the hot walls 12, the heat treatment is completed within a short period of time. Accordingly, the generation of a rough surface due to migration can be controlled, the processing of the large area can be realized easily and superior mass-productivity can also be attained.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor substrate heat treatment apparatus and the like.

[0002]

2. Description of the Related Art Impurity layers in a silicon carbide (SiC) semiconductor device are formed by performing an activation heat treatment after ion implantation. There is a problem that p-type impurities are hard to be activated in SiC even after heat treatment. Therefore, the activation rate is being improved by increasing the heat treatment temperature.

[0003]

However, the SiC substrate after the ion implantation in the heater furnace is heated from room temperature to 160 ° C.
When the surface was observed with an AFM (atomic force microscope) after being heated to 0 ° C. for about 80 minutes and subjected to activation heat treatment, FIG.
It was found that step-like surface roughness occurs on the surface of the substrate as shown in FIG. Further, when the heat treatment temperature is further raised to improve the activation rate of the p-type impurity, it is considered that the surface roughness is further deteriorated. In particular, a substrate having an off angle that is easy to process is likely to cause surface roughness.

When such surface roughness occurs, the MOS
The device characteristics are adversely affected, for example, unevenness is generated at the interface to make it difficult for electrons to flow, and electrode contact resistance is increased. Such surface roughness occurs due to migration (recrystallization) caused by the removal of Si of the SiC constituent element at a high temperature, and the following relationship is established between the activation heat treatment temperature and this migration generation temperature.

Activation heat treatment temperature (1500 ° C. or higher) ≧ migration occurrence temperature (1420 ° C.) That is, when p-type impurity activation heat treatment is performed in SiC, surface roughness is always caused by migration. It is difficult to achieve both high activation and suppression of surface roughness.

In order to solve this problem, the light of a strong lamp is directly applied to the SiC substrate and heat treatment is carried out for a short time so that the atomic migration time is not given, so that the impurities are highly activated and the surface is roughened. We are devising a lamp annealing method that can achieve both suppression. However, in this lamp annealing method, since light from a plurality of lamps is condensed and applied to the substrate, there are problems that it is difficult to process a large area, the in-plane temperature varies widely, and the control is difficult. Further, due to these problems, there is a problem that mass productivity is poor.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to solve the above-mentioned problems, to provide a heat treatment apparatus capable of large area processing, easy to control, and excellent in mass productivity.

[0008]

According to the heat treatment apparatus of claim 1, which has been made to solve the above-mentioned problems, the semiconductor substrate is preliminarily transferred to a region or a stage. The temperature can be raised to a high temperature in a short time. Further, since this region or stage is preheated from 1500 ° C. to 2300 ° C., it is possible to suppress variation in temperature distribution in the heat treatment surface, large area heat treatment is possible, and mass productivity is excellent. Further, since it is only necessary to heat the region or stage to a desired temperature in advance, fine control is not required unlike the case where the wafer is heated by direct irradiation of lamp light, and the control is easy.

Particularly when the semiconductor substrate contains an element or the like that sublimes at the heat treatment temperature, the heat treatment can be completed before such sublimation proceeds. For example, when the semiconductor substrate contains Si, sublimation (Si loss) of Si in the semiconductor substrate occurs at such a high temperature (1500 ° C. or higher). Can be suppressed. For example, as described in claim 2, when the semiconductor substrate is a silicon carbide semiconductor, Si loss in the silicon carbide semiconductor can be suppressed. In particular, when the impurities introduced into the silicon carbide semiconductor by ion implantation are activated as in the third aspect, it can be completed before the surface roughness of the semiconductor substrate due to the elimination of Si progresses.

The atmosphere at the time of such heat treatment is defined in claim 4.
If an inert gas is used as shown in FIG. 5, formation of a reaction product on the surface of the semiconductor substrate during heat treatment can be suppressed. As such an inert gas, for example, as shown in claim 5, A
It is possible to use r, He or a mixed gas thereof.

Further, for example, the atmosphere during the heat treatment of the silicon carbide semiconductor substrate may be a SiC atmosphere as described in claim 6. By doing so, an equilibrium state is realized, Si escape from the silicon carbide semiconductor substrate is suppressed, and surface roughness can be suppressed. Further, the atmospheric pressure may be 600 hPa or more as described in claim 7. If the heat treatment is performed in a state where the atmospheric pressure is high, it becomes difficult for Si to escape from the surface of the semiconductor substrate, and the occurrence of surface roughness can be further suppressed.

In the case where the semiconductor substrate is transported into a region preheated to 1500 ° C. to 2300 ° C., the radiant heat of the preheated hot wall is directly applied to the semiconductor substrate as shown in claim 8. It should be set to. By doing so, the temperature of the semiconductor substrate can be raised to a desired heat treatment temperature more quickly. Therefore, it is possible to suppress the occurrence of surface roughness and the like.

The radiant heat may be applied to one side of the semiconductor substrate, or may be applied to both sides at the same time as shown in claim 9. By touching both sides, the temperature of the semiconductor substrate can be raised more rapidly. Further, in the case of a configuration in which the stage is preheated to 1500 ° C. to 2300 ° C., the heat capacity of the stage is set to 1 of the heat capacity of the semiconductor substrate.
It is better to make it 0 times or more. When a semiconductor substrate whose temperature is lower than that of the stage is placed on the stage, it is possible that the temperature of the stage will drop and accurate heat treatment will not be performed. When mounted, accurate heat treatment can be performed without lowering the temperature of the stage.

The heating of the hot wall or the stage can be performed by using at least one of a lamp, a heater wire and a high frequency as described in claim 11. Since the region or stage is heated in advance and the semiconductor substrate is transferred to the region or stage, it is not necessary to finely control the output of these heat sources, the control becomes easy, and the cost of the heat treatment apparatus can be suppressed.

The hot wall and the stage are claimed in claim 12.
It is desirable to use a high melting point material as shown in FIG. The high melting point material is a material having a melting point of 1500 ° C. or higher, and specifically, as shown in claim 13, a material composed of W, Ta, SiC or C can be used.

When SiC is used as the high melting point material, the hot wall or stage may be formed by sintering 3C-SiC as described in claim 14. When C is used, the hot wall and the stage may be formed by sintering amorphous carbon as described in claim 15.

Such a heat treatment apparatus may be configured so that a plurality of semiconductor substrates can be simultaneously processed as described in claim 16. For example, a plurality of semiconductor substrates are transported once in a preheated area or on a stage.
By doing so, the manufacturing efficiency of the semiconductor device can be improved.

The high temperature region generating means and the conveying means can be constructed as shown in, for example, claim 17. It is desirable that the semiconductor substrate is opposed to the hot wall and radiated heat is directly applied to the semiconductor substrate to perform heat treatment. However, in the case of such a configuration, it is necessary to stand and transport the semiconductor substrate. May fall from the jig. Therefore, as described in claim 18, the inclination angle of the surface on which the semiconductor substrate is mounted is 70 ° to 85 ° with respect to the horizontal plane.
It should be set to. By doing so, it is possible to prevent the semiconductor substrate from slipping down during transportation, it is possible to reliably transport the semiconductor substrate into a high temperature region, and the hot wall and the semiconductor substrate surface can be made to substantially face each other. Radiant heat can be directly applied to the semiconductor substrate.

Further, it is preferable that such a jig has a countersink on the surface on which the semiconductor substrate is set as described in claim 19. By doing so, it is possible to prevent slipping down during transportation, and it is possible to reliably transport into a high temperature region. And, from 1500 ℃ to 230
After performing heat treatment for a desired time in the region heated to 0 ° C. or on the stage, the semiconductor substrate is moved and cooled from the region or stage as described in claim 20. Alternatively, the area or the stage itself is cooled as shown in claim 21. For example, when the semiconductor substrate is SiC, it is important to lower the temperature to 1400 ° C. or lower in a short time even when the temperature is lowered. By cooling in this way, the temperature lowering time can be shortened.

For example, when activating impurities introduced into a SiC substrate by ion implantation, the heat treatment time in the region or stage heated to a high temperature is preferably about 10 seconds. By doing so, it is possible to suppress the progress of Si loss, and it is possible to simultaneously improve the activity rate of impurities and suppress the surface roughness.

The heat treatment method which can be realized by the heat treatment apparatus according to any one of claims 1 to 21 has the same effects as the effects according to claims 1 to 21. For example, the heat treatment method shown in claim 22 can be realized by the heat treatment apparatus according to claim 1, and the same effect as that of claim 1 can be obtained. Claims 2 to 21 can be similarly realized as a heat treatment method.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments to which the present invention is applied will be described below with reference to the drawings. Needless to say, the embodiment of the present invention is not limited to the following examples, and various forms can be adopted as long as they are within the technical scope of the present invention. [First Embodiment] As shown in FIG. 1, a heat treatment apparatus 1 of the present embodiment is an apparatus for performing an activation heat treatment of impurities ion-implanted into a SiC wafer 3, and is shown as a high temperature region generating means. The RF coil 10 is connected to a high frequency power source, and the hot wall 12 is provided inside the RF coil 10. In addition, a transfer arm (not shown) is provided as a transfer unit for transferring the SiC wafer 3, which is a semiconductor substrate, inside the hot wall 12. A jig 14 is attached to the lower end of the transfer arm, and is configured to be movable up and down by a drive mechanism composed of a motor or the like (not shown).

The hot wall 12 is a tubular body having a substantially circular cross section, and is in a temperature region (1500 ° C. to 23 ° C.) in which the activation heat treatment of the impurities ion-implanted into the SiC wafer 3 is performed.
A material having a melting point higher than 00 ° C is used. Specifically, those composed of W, Ta, SiC or C can be used. When SiC is used as the high melting point material, the hot wall 1 is formed by sintering 3C-SiC particles.
2 is preferable, and when C is used, the hot wall 12 may be formed by sintering amorphous carbon.

The activation heat treatment of the SiC wafer 3 is carried out by energizing the RF coil 10 to heat the hot wall 12 so that the hot wall is at a desired temperature (a temperature corresponding to the purpose of the heat treatment) in the range of 1500 ° C. to 2300 ° C. After the high temperature region 5 sandwiched between 12 is generated, the SiC wafer 3 is moved to this high temperature region 5 for performing. That is, after the SiC wafer 3 is placed on the jig 14, the transfer arm is lowered and stopped so that the SiC wafer 3 remains in the high temperature region 5, whereby a desired time (a time corresponding to the purpose of the heat treatment) is obtained. , Heat treatment is performed.

At this time, since the radiant heat from the hot wall 12 is directly applied to the SiC wafer 3 to raise the temperature, when the temperature of the SiC wafer 3 is raised after the jig 14 on which the wafer is placed is warmed as in the conventional case. Compared with the above, the rate of temperature rise is high, and the heat treatment can be performed in a short time.

Further, as in the conventional case, SiC is directly used by a lamp or the like.
Compared to the case where the wafer 3 is heated, the SiC wafer 3 is moved to the high temperature region 5 which is uniformly heated in advance, so that the amount of heat radiated can be easily made uniform. Therefore,
The temperature distribution in the heat-treated surface of the SiC wafer 3 can be suppressed to be extremely small.

When performing the impurity activation heat treatment of SiC, the heat treatment time may be about 10 seconds after the target temperature is reached. By doing so, the progress of surface roughness due to migration can be suppressed.
Particularly, when the SiC wafer 3 is a wafer having an off angle on the surface, an excellent effect is exhibited.

After the SiC wafer 3 is held in the high temperature region 5 for a desired time, the transfer arm is pulled up to raise the high temperature region 5.
Put out from. Thereby, the heat treatment is completed, and the transfer arm and the wafer are cooled at the same time. Note that the heat treatment is preferably performed in an inert gas atmosphere. Thereby, formation of a reaction product on the surface of SiC wafer 3 can be suppressed. Ar, He, or a mixed gas thereof can be used as the inert gas. The atmospheric pressure may be 665 hPa or higher. As a result, S from the surface of the SiC wafer 3
i omission is less likely to occur, and surface roughness can be suppressed.

In a SiC atmosphere (for example, SiH ₄
+ H ₂ atmosphere). In this case, an equilibrium state of Si is realized between the inside of the SiC wafer 3 and the atmosphere, it is possible to suppress Si loss from the surface of the SiC wafer 3 and further suppress the occurrence of surface roughness. In a reactive etching gas atmosphere (for example,
The heat treatment may be performed in an H ₂ or HCl atmosphere), and in such a case, the surface of the SiC wafer 3 is etched, and the occurrence of surface roughness can be further suppressed.

After the SiC wafer 3 is held in the high temperature region 5, the transfer arm is pulled up to cool the wafer 3.
The F coil 10 may be turned off and naturally cooled. Alternatively, for example, a low temperature gas may be blown onto the SiC wafer 3 to forcibly cool it.

Then, the transfer arm is lowered and heat-treated in the high temperature region 5, and then raised and cooled. However, for example, the transfer arm may be raised and transferred to the high temperature region 5, or after the heat treatment. Alternatively, the transfer arm may be lowered to cool it. [Second Embodiment] In this embodiment, as shown in FIG. 2, the shape of the jig 14 is changed in the first embodiment to prevent heat from escaping between the hot wall 12 and the RF coil 10. The heat insulating material 16 is provided, and the configuration, effect, modification, etc. regarding other portions are the same as those in the first embodiment.

As shown in FIG. 2, the jig 14 has a polygonal bottom surface (quadrangle) so that a plurality of wafers can be set, and the number of SiC wafers 3 that can be processed at one time is increased. The jig 14 shown in FIG. 2 has a quadrangular bottom surface, and is provided with a mounting portion for the SiC wafer 3 having a counterbore corresponding to the size of the SiC wafer 3 on each of the four side surfaces. By mounting the SiC wafer 3 on this mounting part, four SiC wafers 3 can be processed simultaneously. Although FIG. 2 illustrates the case where the bottom surface is a quadrangular shape, for example, a hexagonal shape can process six wafers and an octagonal shape can process eight wafers at the same time. When the three-dimensional shape of the portion of the jig 14 on which the SiC wafer 3 is placed is devised in this way,
Many more wafers can be processed simultaneously.

The jig 14 may have a substantially cubic shape, for example, and the SiC wafer 3 may be set on the side surface thereof. However, as shown in FIG.
The inclination angle of the side surface may be in the range of 70 ° to 85 ° with respect to the horizontal plane (for example, 80 °). If you do this,
It is possible to prevent the SiC wafer 3 from dropping during transportation.

FIG. 3 shows the temperature condition in the heat treatment apparatus 1 having such a structure. In FIG. 3A, the transfer arm 15 attached to the jig 14 on which the SiC wafer 3 is set is lowered and stopped so that the SiC wafer 3 remains in the high temperature region 5 of 2000 ° C. It is a figure which shows the temperature state at the time of raising and raising the conveyance arm 15 after heat-processing. Further, FIG. 3B is a diagram showing a temperature state in the case where the heat treatment is performed in the same manner and then the energization to the RF coil is turned off without raising the transfer arm 15 to naturally cool. The SiC wafer 3 reaches the heat treatment temperature of 2000 ° C. from room temperature (RT) in a short time when it is transferred to the high temperature region 5. Then, the impurity activation heat treatment is completed in about 10 seconds. Therefore, as compared with the conventional method, the progress of the surface roughness of the SiC wafer 3 due to the migration can be suppressed, and the production efficiency can be improved.

In this embodiment, the jig 14 has a circular S shape.
Although the iC wafer 3 can be set, a plurality of chips can be heat-treated at the same time by providing a plurality of dents each having a chip size capable of setting a small chip type sample. [Third Embodiment] In this embodiment, the structure of the jig 14 is changed from that of the second embodiment. The configuration, effect, modification, etc. of the other parts are the same as those in the second embodiment.

As shown in FIG. 4, the jig 14 of the present embodiment is designed so that when the SiC wafer 3 is set, the SiC wafer 3
The radiant heat from the hot wall 12 is received from both sides of the above. That is, the jig 14 has an S
A through hole having a size substantially the same as the size of the iC wafer 3 is provided, and a guide mechanism (for example, approximately the same as the thickness of the wafer is provided) for preventing the SiC wafer 3 from falling when set in the through hole. (Thickness groove) is provided.

FIG. 5 shows a temperature change in the heat treatment apparatus 1 having such a structure. In FIG. 5A, the transfer arm 15 attached to the jig 14 on which the SiC wafer 3 is set is moved down to bring the SiC wafer 3 into the high temperature region 5 of 2000 ° C.
FIG. 5 (b) is a diagram showing a temperature state when the transfer arm 15 is raised and cooled after the heat treatment is performed for about 10 seconds after the heat treatment is performed. It is a figure which shows the temperature state at the time of cooling naturally by turning off the electricity supply to RF coil, without raising the conveying arm 15. The SiC wafer 3 is heated from the room temperature (RT) to the heat treatment temperature of 200 after being transferred to the high temperature region 5 in a short time.
Reach 0 ° C. Then, the impurity activation heat treatment is completed in about 10 seconds. Therefore, as compared with the conventional method, it is possible to suppress the progress of the surface roughness of the SiC wafer 3 due to the migration, so that it is possible to perform a large area treatment, and the fine temperature control as in the case of directly radiating the light of the lamp is unnecessary. Therefore, the production efficiency can be improved. [Fourth Embodiment] As shown in FIG. 6, the heat treatment apparatus 1 of the present embodiment is an apparatus for performing activation heat treatment of impurities ion-implanted into the SiC wafer 3, and is shown as a high temperature region generating means. RF coil 10 connected to a high-frequency power source, and stage 1 provided inside RF coil 10
8 and. Further, as a transfer means for transferring the SiC wafer 3 onto the stage 18, a transfer arm 15 and a wafer set table 17 attached to the lower end of the transfer arm 15 are provided.

The stage 18 is a cylindrical body on which the SiC wafer 3 can be placed and whose upper surface has the same size as the heat-treated surface of the SiC wafer 3. Stage 18 is
A material having a melting point higher than the temperature range (1500 ° C. to 2300 ° C.) in which the activation heat treatment of the impurities implanted into the SiC wafer 3 is performed is used. Specifically, W,
What was comprised by Ta, SiC, or C can be used. When SiC is used as the high melting point material, 3C-
The stage 18 is preferably formed by sintering SiC particles, and when C is used, the stage 18 may be formed by sintering amorphous carbon. The heat capacity of the stage 18 is about 10 times that of the SiC wafer 3.

As shown in FIG. 7, the wafer set table 17 has a central portion having a diameter larger than the upper surface of the stage 18, and
A through hole 17a having a diameter smaller than that of the SiC wafer 3 is provided. Further, a recess 17b for mounting the SiC wafer 3 is provided on the upper surface of the wafer setting table 17 so as to surround the through hole 17a.

By energizing the RF coil 10, the stage 18 is heated to a desired temperature in the range of 1500 ° C. to 2300 ° C. (temperature according to the purpose of the heat treatment), and then the transfer arm 15 is lowered to lower the SiC wafer 3. The stage 18 is passed through the through hole 17a of the wafer set table 17 on which the SiC wafer 3 is mounted, the SiC wafer 3 is left on the stage 18 and further lowered (see the central diagrams of FIGS. 6 and 7). Then, the transfer arm 15 is lifted to remove the SiC wafer 3 from the stage 18, and the heat treatment is completed (see the drawing on the right side of FIG. 7). The time during which the SiC wafer 3 is placed on the stage 18 is set to a desired time (a time corresponding to the purpose of heat treatment), for example, 10 seconds.

Since the heat capacity of the stage 18 is sufficiently larger than that of the SiC wafer 3, the temperature of the stage 18 does not drop when the SiC wafer is placed. Also 1 in advance
Since the SiC wafer 3 is left on the stage 18 heated to a high temperature of 500 ° C. to 2300 ° C., the temperature rising speed is fast and the heat treatment can be performed in a short time.

FIG. 8 shows a temperature change in the heat treatment apparatus 1 having such a structure. FIG. 8A is a diagram showing a temperature state when the SiC wafer 3 is left on the stage 18 at 2000 ° C. for 10 seconds to perform heat treatment, and then the transfer arm 15 is raised and cooled. (B) is a diagram showing a temperature state in the case where the heat treatment is performed and then the energization to the RF coil is turned off without raising the transfer arm 15 to naturally cool.

When being transferred onto the stage 18, the SiC wafer 3 reaches a heat treatment temperature of 2000 ° C. from room temperature (RT) in a short time. Then, the impurity activation heat treatment is completed in about 10 seconds. Therefore, according to the present heat treatment apparatus 1, the SiC wafer 3 can be heated at a high speed, and the heat treatment can be performed uniformly and in a short time.
It is possible to suppress the progress of Si removal from the surface of the wafer 3 and suppress the occurrence of surface roughness of the SiC wafer 3.
Therefore, a large area can be processed and productivity is improved. Further, as compared with the case of directly irradiating the SiC wafer 3 with the light of the lamp, fine control of the heat source and the like are unnecessary, and the control is easy.

As for the atmosphere during the heat treatment, an inert gas atmosphere, a SiH ₄ + H ₂ atmosphere, an etching gas atmosphere, etc. can be used as in the first embodiment.
The same effects as those described in the first embodiment are obtained.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a configuration of a heat treatment apparatus of a first embodiment.

FIG. 2 is an explanatory diagram showing a configuration of a heat treatment apparatus of a second embodiment.

FIG. 3 is a diagram showing an example of temperature changes of a high temperature region and a wafer in the heat treatment apparatus of the second embodiment.

FIG. 4 is an explanatory diagram showing a configuration of a heat treatment apparatus of a third embodiment.

FIG. 5 is a diagram showing an example of temperature changes of a high temperature region and a wafer in the heat treatment apparatus of the third embodiment.

FIG. 6 is an explanatory diagram showing a configuration of a heat treatment apparatus of a fourth embodiment.

FIG. 7 is an explanatory diagram showing the structure of the heat treatment apparatus of the fourth embodiment and the movement of the transfer arm.

FIG. 8 is a diagram showing an example of temperature changes of a high temperature region and a wafer in the heat treatment apparatus of the fourth embodiment.

FIG. 9 is a diagram showing surface roughness of a SiC wafer in a conventional heat treatment apparatus.

[Explanation of symbols]

1 ... Heat treatment equipment 3 ... SiC wafer 5 ... High temperature area 10 ... RF coil 12 ... Hot wall 14 ... Jig 15 ... Transport arm 16 ... Insulation 17 ... Wafer set stand 17a ... through hole 17b ... recess 18 ... Stage

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Jun Kojima             1-1, Showa-cho, Kariya city, Aichi stock market             Inside the company DENSO (72) Inventor Toshiyuki Morishita             1-1, Showa-cho, Kariya city, Aichi stock market             Inside the company DENSO F-term (reference) 5F031 CA02 FA01 FA09 GA30 HA02                       HA62 HA64 HA66 MA30 PA04                       PA09 PA18

Claims (22)

[Claims] 1. A transporting means for transporting a semiconductor substrate, and a high temperature region generating means for generating a region or a stage which has been heated to 1500 ° C. to 2300 ° C. in advance, wherein the high temperature region generating means generates the high temperature region within the region. Alternatively, the heat treatment apparatus is characterized in that the heat treatment of the semiconductor substrate is performed by transporting the semiconductor substrate onto the stage by the transport means. 2. The heat treatment apparatus according to claim 1, wherein the semiconductor substrate contains a silicon carbide semiconductor. 3. The heat treatment apparatus according to claim 1, wherein the heat treatment is activation heat treatment of impurities introduced into a silicon carbide semiconductor by ion implantation. 4. The heat treatment apparatus according to claim 1, wherein the atmosphere during the heat treatment is an inert gas. 5. The heat treatment apparatus according to claim 1, wherein the inert gas is Ar, He or a mixed gas thereof. 6. The heat treatment apparatus according to claim 1, wherein an atmosphere during the heat treatment is a SiC atmosphere. 7. The heat treatment apparatus according to claim 1, wherein the atmospheric pressure during the heat treatment is 600 hPa or more. 8. The heat treatment apparatus according to claim 1, wherein the heat treatment is performed such that the radiant heat of a hot wall that has been heated in advance hits the semiconductor substrate directly. 9. The heat treatment apparatus according to claim 8, wherein the radiant heat is applied from both sides of the semiconductor substrate. 10. The heat treatment apparatus according to claim 1, wherein the heat capacity of the stage is 10 times the heat capacity of the semiconductor substrate.
A heat treatment apparatus characterized by being more than doubled. 11. The heat treatment apparatus according to claim 1, wherein the hot wall or the stage is heated by using at least one of a lamp, a heater wire and a high frequency wave. Heat treatment equipment. 12. The heat treatment apparatus according to claim 1, wherein the hot wall and the stage are made of a high melting point material. 13. The heat treatment apparatus according to claim 12, wherein the high melting point material is W, Ta, SiC, or C. 14. The heat treatment apparatus according to claim 1, wherein the hot wall and the stage are 3C-S.
A heat treatment apparatus characterized by being formed by sintering iC. 15. The heat treatment apparatus according to claim 1, wherein the hot wall and the stage are formed by sintering amorphous carbon. 16. The heat treatment apparatus according to claim 1, wherein a plurality of semiconductor substrates are simultaneously heat-treated in one treatment. 17. The heat treatment apparatus according to any one of claims 1 to 16, wherein the high temperature region generating means heats a standing cylindrical hot wall, and the hot wall is preliminarily set to 15 in advance.
It is configured to generate a region heated to 00 ° C. to 2300 ° C., and the transporting unit includes a jig for mounting the semiconductor substrate, and the semiconductor device is mounted on the jig, and the transfer device is set upright. A heat treatment apparatus, wherein the jig is moved up and down to be conveyed to the heated region in the formed cylindrical hot wall. 18. The heat treatment apparatus according to claim 17, wherein the jig has an inclination angle of a surface on which a semiconductor substrate is mounted at 70 ° to 85 ° with respect to a horizontal plane. 19. The heat treatment apparatus according to claim 1, wherein the carrying means includes a jig having a counterbore on a surface on which the semiconductor substrate is mounted so that the semiconductor substrate does not drop. A heat treatment apparatus characterized by the above. 20. The heat treatment apparatus according to claim 1, wherein the transport unit cools the semiconductor substrate by removing the semiconductor substrate from the area or from the stage. And heat treatment equipment. 21. The heat treatment apparatus according to claim 1, wherein the semiconductor substrate is cooled by lowering the temperature of the region or the stage. 22. A heat treatment method of performing heat treatment on a semiconductor substrate by moving the semiconductor substrate into a region preheated to 1500 ° C. to 2300 ° C. or on a stage.