TW350981B - Method and system for plasma-processing - Google Patents

Method and system for plasma-processing

Info

Publication number
TW350981B
TW350981B TW086118960A TW86118960A TW350981B TW 350981 B TW350981 B TW 350981B TW 086118960 A TW086118960 A TW 086118960A TW 86118960 A TW86118960 A TW 86118960A TW 350981 B TW350981 B TW 350981B
Authority
TW
Taiwan
Prior art keywords
chamber
plasma
processing
mixed gas
semiconductor substrate
Prior art date
Application number
TW086118960A
Other languages
Chinese (zh)
Inventor
Masahiro Hisada
Original Assignee
Sumitomo Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Ind filed Critical Sumitomo Metal Ind
Application granted granted Critical
Publication of TW350981B publication Critical patent/TW350981B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A method for processing a semiconductor substrate placed in a chamber, a mixed gas of oxygen and inert gas is supplied into the chamber and plasma is generated with the mixed gas in the chamber, for generation of plasma in the mixed gas in the chamber and before processing the semiconductor substrate, heating the inside of the chamber to a predetermined temperature.
TW086118960A 1996-10-29 1997-12-16 Method and system for plasma-processing TW350981B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28647496A JPH10130872A (en) 1996-10-29 1996-10-29 Plasma treatment

Publications (1)

Publication Number Publication Date
TW350981B true TW350981B (en) 1999-01-21

Family

ID=17704871

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118960A TW350981B (en) 1996-10-29 1997-12-16 Method and system for plasma-processing

Country Status (2)

Country Link
JP (1) JPH10130872A (en)
TW (1) TW350981B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
JP4490704B2 (en) * 2004-02-27 2010-06-30 株式会社日立ハイテクノロジーズ Plasma processing method
JP2007158230A (en) * 2005-12-08 2007-06-21 Nec Electronics Corp Cleaning method for plasma etching equipment and plasma etching equipment
JP4490938B2 (en) * 2006-04-20 2010-06-30 株式会社日立ハイテクノロジーズ Plasma processing equipment
US20100151150A1 (en) * 2007-05-18 2010-06-17 Ulvac, Inc. Plasma processing apparatus and manufacturing method of deposition-inhibitory member
KR102614972B1 (en) * 2020-02-03 2023-12-19 주식회사 히타치하이테크 Plasma processing device and plasma processing method

Also Published As

Publication number Publication date
JPH10130872A (en) 1998-05-19

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