JPS6447869A - Thin film forming method - Google Patents

Thin film forming method

Info

Publication number
JPS6447869A
JPS6447869A JP62205526A JP20552687A JPS6447869A JP S6447869 A JPS6447869 A JP S6447869A JP 62205526 A JP62205526 A JP 62205526A JP 20552687 A JP20552687 A JP 20552687A JP S6447869 A JPS6447869 A JP S6447869A
Authority
JP
Japan
Prior art keywords
gaseous reactant
substrate
thin film
active species
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62205526A
Other languages
Japanese (ja)
Inventor
Toshinori Yagi
Yoshiyuki Goto
Haruhiko Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62205526A priority Critical patent/JPS6447869A/en
Publication of JPS6447869A publication Critical patent/JPS6447869A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE:To form a high-quality thin film at a high rate without damaging the substrate by decomposing the main gaseous reactant with UV light, decomposing the other gaseous reactant difficult to decompose with discharge plasma, subjecting both obtained active species to a reaction, and depositing the reaction product on the substrate. CONSTITUTION:A gaseous reactant such as hydrocarbons constituting the main raw material for a thin film is supplied into a reaction vessel 1 from a gaseous reactant supply device 8, UV light is projected from an UV light generator 1 using an argon- fluorine excimer laser to decompose the gaseous reactant, and a first active species is formed. Meanwhile, a gaseous reactant such as hydrogen difficult to decompose by UV light is supplied from a gaseous reactant supply device 29, and decomposed with the discharge plasma 28 generated from a discharge tube 25 provided with an electrode 26 connected to a high-frequency power source 27 to form a second active species which is introduced onto the substrate 5. Both active species are heated to a prescribed temp. by a heater 6, and allowed to react with each other on the substrate 5. By this method, the impurities are removed by the reaction with the second species, a high-quality thin film of hard carbon, etc., is formed on the substrate 5 at a high rate, and the damage of the substrate 5 is prevented.
JP62205526A 1987-08-18 1987-08-18 Thin film forming method Pending JPS6447869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205526A JPS6447869A (en) 1987-08-18 1987-08-18 Thin film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205526A JPS6447869A (en) 1987-08-18 1987-08-18 Thin film forming method

Publications (1)

Publication Number Publication Date
JPS6447869A true JPS6447869A (en) 1989-02-22

Family

ID=16508344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205526A Pending JPS6447869A (en) 1987-08-18 1987-08-18 Thin film forming method

Country Status (1)

Country Link
JP (1) JPS6447869A (en)

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