JPS6447875A - Plasma cvd device - Google Patents
Plasma cvd deviceInfo
- Publication number
- JPS6447875A JPS6447875A JP20076987A JP20076987A JPS6447875A JP S6447875 A JPS6447875 A JP S6447875A JP 20076987 A JP20076987 A JP 20076987A JP 20076987 A JP20076987 A JP 20076987A JP S6447875 A JPS6447875 A JP S6447875A
- Authority
- JP
- Japan
- Prior art keywords
- pipes
- uniformly
- thin film
- reaction vessel
- small holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To uniformly decompose and form radicals from reactive gases and to enhance the quality of the formed thin film by arranging plural pieces of pipes consisting of electrically conductive materials bored with many small holes as reactive gas introducing pipes in common use as discharge electrodes into a reaction vessel. CONSTITUTION:Plural pieces of the pipes 8 having the many small holes 9 distributed uniformly on the side faces are arrayed within the reaction vessel 1 provided with a coil 2 for magnetic field modulation on the outside. The pipes 8 are communicated with a reactive gas source (not shown) and is connected to a power supply 6. The reactive gases are introduced into the reaction vessel 1 from the above-mentioned small holes of the pipes 8 to generate plasma and the thin film is formed on a substrate 7. A plasma CVD deice is constituted in the above-mentioned manner, by which the reactive gases are admitted uniformly into the plasma forming range and the radicals are uniformly decomposed and formed. The thin film formed on the substrate 7 is uniform and is high in quality.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20076987A JPS6447875A (en) | 1987-08-13 | 1987-08-13 | Plasma cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20076987A JPS6447875A (en) | 1987-08-13 | 1987-08-13 | Plasma cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447875A true JPS6447875A (en) | 1989-02-22 |
Family
ID=16429868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20076987A Pending JPS6447875A (en) | 1987-08-13 | 1987-08-13 | Plasma cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447875A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6189485B1 (en) | 1998-06-25 | 2001-02-20 | Anelva Corporation | Plasma CVD apparatus suitable for manufacturing solar cell and the like |
JP2008285763A (en) * | 2008-07-28 | 2008-11-27 | Mitsubishi Heavy Ind Ltd | Electrode, and vacuum treatment system provided therewith |
US8092640B2 (en) * | 2005-01-13 | 2012-01-10 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
-
1987
- 1987-08-13 JP JP20076987A patent/JPS6447875A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6189485B1 (en) | 1998-06-25 | 2001-02-20 | Anelva Corporation | Plasma CVD apparatus suitable for manufacturing solar cell and the like |
US8092640B2 (en) * | 2005-01-13 | 2012-01-10 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
JP2008285763A (en) * | 2008-07-28 | 2008-11-27 | Mitsubishi Heavy Ind Ltd | Electrode, and vacuum treatment system provided therewith |
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