JPS6447875A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS6447875A
JPS6447875A JP20076987A JP20076987A JPS6447875A JP S6447875 A JPS6447875 A JP S6447875A JP 20076987 A JP20076987 A JP 20076987A JP 20076987 A JP20076987 A JP 20076987A JP S6447875 A JPS6447875 A JP S6447875A
Authority
JP
Japan
Prior art keywords
pipes
uniformly
thin film
reaction vessel
small holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20076987A
Other languages
Japanese (ja)
Inventor
Masayoshi Murata
Shoji Morita
Joji Ichinari
Jiro Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP20076987A priority Critical patent/JPS6447875A/en
Publication of JPS6447875A publication Critical patent/JPS6447875A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To uniformly decompose and form radicals from reactive gases and to enhance the quality of the formed thin film by arranging plural pieces of pipes consisting of electrically conductive materials bored with many small holes as reactive gas introducing pipes in common use as discharge electrodes into a reaction vessel. CONSTITUTION:Plural pieces of the pipes 8 having the many small holes 9 distributed uniformly on the side faces are arrayed within the reaction vessel 1 provided with a coil 2 for magnetic field modulation on the outside. The pipes 8 are communicated with a reactive gas source (not shown) and is connected to a power supply 6. The reactive gases are introduced into the reaction vessel 1 from the above-mentioned small holes of the pipes 8 to generate plasma and the thin film is formed on a substrate 7. A plasma CVD deice is constituted in the above-mentioned manner, by which the reactive gases are admitted uniformly into the plasma forming range and the radicals are uniformly decomposed and formed. The thin film formed on the substrate 7 is uniform and is high in quality.
JP20076987A 1987-08-13 1987-08-13 Plasma cvd device Pending JPS6447875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20076987A JPS6447875A (en) 1987-08-13 1987-08-13 Plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20076987A JPS6447875A (en) 1987-08-13 1987-08-13 Plasma cvd device

Publications (1)

Publication Number Publication Date
JPS6447875A true JPS6447875A (en) 1989-02-22

Family

ID=16429868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20076987A Pending JPS6447875A (en) 1987-08-13 1987-08-13 Plasma cvd device

Country Status (1)

Country Link
JP (1) JPS6447875A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6189485B1 (en) 1998-06-25 2001-02-20 Anelva Corporation Plasma CVD apparatus suitable for manufacturing solar cell and the like
JP2008285763A (en) * 2008-07-28 2008-11-27 Mitsubishi Heavy Ind Ltd Electrode, and vacuum treatment system provided therewith
US8092640B2 (en) * 2005-01-13 2012-01-10 Sharp Kabushiki Kaisha Plasma processing apparatus and semiconductor device manufactured by the same apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6189485B1 (en) 1998-06-25 2001-02-20 Anelva Corporation Plasma CVD apparatus suitable for manufacturing solar cell and the like
US8092640B2 (en) * 2005-01-13 2012-01-10 Sharp Kabushiki Kaisha Plasma processing apparatus and semiconductor device manufactured by the same apparatus
JP2008285763A (en) * 2008-07-28 2008-11-27 Mitsubishi Heavy Ind Ltd Electrode, and vacuum treatment system provided therewith

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