JP2008285763A - Electrode, and vacuum treatment system provided therewith - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrode capable of effectively utilizing gas, and further, capable of reducing production cost. <P>SOLUTION: The electrode 60 is arranged between a heater cover supporting the substrate to be treated and a film production cover 12, feeds a gas into a space surrounded by the heater cover and the film production cover 12, and also comprises an upper gas header 10a, a lower gas header 10b and a plurality of gas pipes 60c, 60c' connected to a space between the upper gas header 10a and the lower gas header 10b. The gas pipes 60c' located at the outside than the position confronted with the substrate to be treated are not provided with gas blow-off ports 60d for blowing off the gas into the space. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a gas blowing electrode used in a vacuum plasma processing apparatus for performing vacuum plasma processing such as plasma CVD, dry etching, and sputtering on a substrate.

Conventionally, in a plasma CVD apparatus or the like, a reactive gas is supplied to a gas blowing type electrode (hereinafter referred to as “electrode”) in a vacuum plasma processing apparatus, and this is decomposed and reacted in a plasma atmosphere (substrate to be processed). Is made to form a thin film. At this time, the main flow of the reaction gas blown out from the electrode is perpendicular to the surface of the substrate (see, for example, Patent Document 1).
JP 2001-120985 A

  However, in the invention of Patent Document 1 described above, when the gap between the electrode and the substrate is reduced in order to increase the film forming speed, the gas blown out from the gas blowing holes reaches the substrate surface without being sufficiently diffused. However, a film pattern (spot color, local thick film or powder) is generated on the surface of the substrate facing the gas blowing holes, and there is a limit in reducing the distance between the electrode and the substrate.

  In addition, the conventional electrode is provided with a gas blowing hole in the gas pipe located outside the substrate size, which wastes gas and increases the number of work steps for processing the gas blowing hole. In addition, there is a problem that the manufacturing cost increases.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electrode that can effectively use gas and can reduce manufacturing costs.

The present invention employs the following means in order to solve the above problems.
An electrode according to the present invention is disposed between a heater cover and a film-forming cover that support a substrate to be processed, and supplies gas into a space surrounded by the heater cover and the film-forming cover and serves as an electrode. And an electrode having an upper gas header, a lower gas header, and a plurality of gas pipes connected between the upper gas header and the lower gas header, The gas pipe positioned outside the facing position is not provided with a gas blowing hole provided for blowing out the gas into the space.

According to the electrode of the present invention, the gas pipe that is not located at the position facing the substrate to be processed is not provided with any gas blowing holes, and there is no gas blowing that does not contribute to film formation. Since it can suppress, effective use of gas can be aimed at and the consumption of gas can be reduced.
Further, since it is not necessary to provide a gas blowing hole in the gas pipe that is not opposed to the substrate to be processed, the step of processing the hole can be omitted, and the manufacturing cost can be reduced.

  In the electrode, it is more preferable that the gas blowing hole is perforated so that a main flow of gas blown from the gas blowing hole does not face a direction perpendicular to the surface of the substrate to be processed.

According to such an electrode, since the gas blowing hole is provided so that the main flow of the gas blown out from the gas blowing hole does not hit the substrate to be processed, the substrate surface facing the gas blowing hole Film pattern (spot color, local thick film and powder) can be prevented, and uniform film thickness and film quality can be formed on the substrate surface. Can be improved.
In addition, film patterns (spot color, local thick film and powder) are less likely to occur on the substrate surface, so the gap (distance) between the gas tube and the substrate to be processed can be reduced, and the plasma intensity can be increased. Thus, the film forming speed can be increased, the film quality can be improved, and the film forming unit can be made thin (downsized).
Here, “not hitting vertically” means that the main flow of the gas blown out from the gas blowing hole is directed in a direction having a certain angle with respect to a vertical line standing on the surface of the substrate to be processed, for example. That is. More specifically, as shown in FIG. 1, it is directed to the opposite side of the substrate to be processed, or as shown in FIGS. 3 and 4, in a direction along a plane substantially parallel to the surface of the substrate to be processed. It means being directed.

  In the electrode, it is more preferable that the gas blowing hole is formed on a side opposite to a side where the substrate to be processed is located.

According to such an electrode, the gas blown out from the gas blowing hole is once led to the side opposite to the side where the substrate to be processed is located (toward the film forming cover), and then to the substrate to be processed. Then, after being sufficiently diffused in the space, it reaches the process side surface of the substrate to be processed, so that a uniform film thickness and film quality can be formed on the substrate surface.
In addition, since the gas blowing holes are opened toward the opposite side of the substrate to be processed, even if the electrode is brought closer to the substrate to be processed, no film pattern is generated in the film formation. Therefore, the gap (distance) between the gas tube and the substrate to be processed can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, the plasma intensity can be increased, the film forming speed can be increased, and the film quality can be improved. In addition, the film forming unit can be made thin (downsized).

  In the electrode, it is more preferable that a baffle plate is provided at a position facing the gas blowing hole.

  According to such an electrode, the gas flow to the side opposite to the side on which the substrate to be processed is located (toward the film forming cover) is restricted (suppressed) by the baffle plate. The gap (distance) with the membrane cover can be reduced, and the membrane-forming unit can be further reduced in thickness (downsized).

  In the electrode, the gas blowing hole is drilled so that a main flow of the gas blown from the gas blowing hole is along a tangent line drawn from the gas blowing hole toward a substrate side surface of an adjacent gas pipe. More preferably.

According to such an electrode, the gas blown out from the gas blowing hole reaches the side of the adjacent gas pipe (which becomes the electrode), that is, the plasma sheath region around the electrode in a short time. ) Is less likely to occur, and it is possible to realize a high-quality film formation that is more uniform and has fewer defects.
In addition, since the main flow of gas is blown toward the surface of the substrate to be processed of the adjacent gas pipe, the gap (distance) between the gas pipe and the film forming cover can be reduced, and the production The membrane unit can be further reduced in thickness (downsized).

  In the above-mentioned electrode, the gas blowout hole is arranged so that a main flow of gas blown out from the gas blowout hole is along a tangent line drawn from the gas blowout hole toward the surface of the adjacent gas pipe on the film forming cover side. More preferably, it is perforated.

According to such an electrode, the gas blown out from the gas blowing hole reaches the side of the adjacent gas pipe (which becomes the electrode), that is, the plasma sheath region around the electrode in a short time. ) Is less likely to occur, and it is possible to realize a high-quality film formation that is more uniform and has fewer defects.
In addition, since the main flow of gas is blown out toward the surface of the adjacent gas pipe on the side opposite to the side where the substrate to be processed is located (film formation cover side), the gas pipe and the substrate to be processed And the gap (distance) between the film forming unit and the film forming unit can be further reduced.

  In the above electrode, it is more preferable that the gas blowing hole is perforated so that gas is blown out in at least two directions with respect to one gas pipe.

  According to such an electrode, gas is blown out in one direction from one gas pipe, so that the diffusion of gas in the space can be further promoted, and the substrate surface is more uniform. Therefore, the quality of the film-formed product and the surface-treated product can be further improved.

  In the electrode, the gas blowing holes are provided at an equal pitch with respect to one gas pipe, and the gas blowing holes of the gas pipe adjacent to the one gas pipe are gas provided in the one gas pipe. It is more preferable that it is provided with a 1/2 pitch shift from the blowing hole.

  According to such an electrode, since the gas blowing holes are arranged in a staggered manner, gas diffusion (or mixing) can be further promoted, and a uniform film thickness and film quality can be formed on the substrate surface. In addition, the quality of the film-formed product and the surface-treated product can be further improved.

  In the electrode, it is more preferable that the length of the gas pipes in the arrangement direction is shorter than the length in the direction orthogonal to the arrangement direction.

According to such an electrode, by reducing the length in the arrangement direction of the gas pipes (that is, the length in the width direction when viewed from the substrate to be processed), the distance between the gas pipes and the gas pipes is reduced. That is, since the pitch of the gas pipes can be reduced, the number of gas pipes can be increased, the uniformity of the electrode plasma can be improved, and a more uniform film formation can be realized.
In addition, by increasing the tube diameter (major axis) in the direction orthogonal to the arrangement direction, the conventional passage cross-sectional area is ensured, and the gas passage resistance in the gas pipe does not increase, so that the gas blow-out holes can be uniform. Gas can be blown out, the uniformity of the electrode plasma can be improved, a more uniform film formation can be realized, and the film formation speed and the film quality can be improved.

  In the vacuum processing apparatus according to the present invention, the gas pipe that is not located at the position facing the substrate to be processed includes an electrode in which no gas blowing hole is provided, so that the gas can be used effectively. Manufacturing cost can be reduced.

  According to the present invention, it is possible to effectively use gas and to reduce the manufacturing cost.

Hereinafter, a first embodiment of an electrode according to the present invention will be described with reference to the drawings.
The electrode according to the present invention is used, for example, in a cluster type vacuum processing apparatus 801 as shown in FIG.
As shown in FIG. 9, the cluster type vacuum processing apparatus 801 includes a common transfer chamber 830 as a carriage rotation chamber in the center, and a load chamber 810, an unload chamber 820, and five film forming chambers (vacuums) so as to surround the periphery. Processing chambers) 870A to 870E and a spare chamber 880 are arranged. Each of these chambers 810, 820, 870A to 870E, 880 communicates with the carriage movement connection chambers 840A to 840H via gate valves (not shown), respectively, and each carriage movement connection chamber 840A to 840H communicates with the common transfer chamber 830. Each communicates.

  The load chamber 810 is provided with two transfer devices 806A and 806B, the unload chamber 820 is also provided with two transfer devices 806C and 806D, and the common transfer chamber 830 is provided with two transfer devices 806E and 806F. In the entire apparatus, a total of at least six transfer apparatuses 806A to 806F are arranged in various places.

  As shown in FIG. 10, in the above-described film forming chambers 870A to 870E, a fixed film forming unit 912, and substrate heating heaters 913 and 913 fixedly disposed on both sides of the film forming unit 912, respectively. Is arranged. Further, between the film forming unit 912 and the substrate heating heater 913, there are a glass substrate (substrate to be processed) 914, a heater cover 915, an electrode 916 and the like which are transferred to a predetermined position in the film forming chamber by a substrate transfer carriage described later. Has been placed.

  The film forming unit 912 is configured as shown in FIG. That is, the film forming unit 912 includes a film forming unit temperature control heater or cooler (hereinafter referred to as a “temperature control unit”) 917 disposed so as to stand in the center, and a film forming cover (“ (Also referred to as an “integrated film forming unit cover”, hereinafter referred to as an “adhesion plate”)) an electrode 916 disposed via 918, and a positioner (substrate peripheral frame) 919 disposed on the frame portion of the electrode 916; An exhaust gas cover 920 that is connected to the positioner 919 so as to surround a part of the temperature control unit 917, the deposition preventing plate 918 and the electrode 916, and the glass disposed on the back side of the electrode 916. A heater cover 915 for supporting the substrate 914 and an exhaust pipe (exhaust means) 921 for exhausting the exhaust gas cover 920 are provided.

  For example, the glass substrate 914 is supported by a heater cover 915 having two bolt receivers 922 on the upper and lower sides. The heater cover 915 is brought into close contact with the positioner 919 when the bolt 924 is rotated by the drive motor 923. Further, the substrate heating heater 913 moves as indicated by an arrow A in FIG. The electrode 916 is a gas blow-out integrated type, and is composed of a pipe-shaped frame body 916a and a pipe 916b having a plurality of gas blow-out holes in parallel with the frame body 916a.

  FIG. 12 shows a state in which the substrate is in the carry-in state by the transfer device on the left side from the center line L in the standing direction, and the glass substrate 914 is set on the heater cover 915 on the right side from the center line L, and the carriage has been moved. Until the start of film formation, the heater cover 915 is further advanced to bring the glass substrate 914 into close contact with the positioner 919. The glass substrate 914 is transferred from a preliminary carriage chamber (not shown) to a film forming chamber 911 by a substrate transfer carriage 925 as shown in FIG. Further, reference numeral 926 in FIG. 12 indicates a maintenance door.

FIG. 1 is a view showing an electrode 10 according to the present embodiment, in which (a) is a partial cross-sectional view, and (b) is a partial vertical cross-sectional view. The electrode 10 is disposed between the heater cover 11 that supports the substrate to be processed K and the deposition preventing plate 12, and supplies a reactive gas into a space S surrounded by the heater cover 11 and the deposition preventing plate 12. In addition, it has a function as an electrode.
The electrode 10 includes a gas supply pipe (not shown), an upper gas header 10a and a lower gas header 10b connected to the gas supply pipe, and a plurality of gases connected between the upper gas header 10a and the lower gas header 10b. Tube 10c. Reference numeral 11 a in the drawing is a substrate pressing tool for holding the substrate to be processed K on the heater or bar 11. Further, symbol G in the figure indicates a gap between the tip of the deposition preventing plate 12 and the substrate pressing member 11a provided in the heater cover 11, and the gas supplied into the space S is discharged. It is a part that becomes a passage.

The outer diameter Φ of the gas pipe 10c is, for example, 6 mm to 12 mm, and the pitch P between the gas pipe 10c and the gas pipe 10c is, for example, 1.5 × outer diameter Φ-3 × outer diameter Φ.
The diameter of each gas blowing hole 10d provided in the gas pipe 10c is, for example, 0.3 mm to 0.5 mm, and the pitch P2 between the gas blowing hole 10d and the gas blowing hole 10d is, for example, 0.3 × pitch. P to 1.5 × pitch P.

  As shown in FIG. 1, in the electrode 10 in this embodiment, the gas blowing holes 10d provided in each gas pipe 10c are opened toward the opposite side of the substrate to be processed K, that is, toward the deposition preventing plate 12. Yes. In other words, the gas blowing hole 10d of the electrode 10 in the present embodiment allows gas to flow in a direction opposite to the direction described in the column of the prior art (on a line parallel to the perpendicular to the substrate K to be processed and opposite to the substrate). It is provided so that the mainstream blows out.

As a result, the gas blown out from the gas blowing hole 10d is sufficiently diffused in the space S and then reaches the processing side surface of the substrate K to be processed, so that a uniform film thickness and film quality are formed on the substrate surface. Can be made.
Further, since the gas blowing hole 10d opens toward the opposite side of the substrate to be processed K, even if the electrode 10 is brought closer to the substrate to be processed K, a film pattern does not occur in the film formation. Therefore, the gap (distance) D1 between the gas pipe 10c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, the plasma intensity can be increased, the film forming speed can be increased, The film quality can be improved and the film forming unit can be made thinner (smaller).
The gap (distance) D2 between the gas pipe 10c and the deposition preventing plate 12 is desirably about 1 to 6 times D1.

Next, a second embodiment of the electrode according to the present invention will be described with reference to FIG. The electrode 20 in the present embodiment is the same as that of the first embodiment in that baffle plates 21 having an arcuate cross section made of an insulator are provided at positions facing the gas blowing holes 10d of the first embodiment. And different. Since other components are the same as those in the first embodiment described above, description of these components is omitted here, and only the baffle plate 21 will be described.
In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment.

The baffle plate 21 is a plate-shaped member having a circular arc cross section provided at a position where the gas blown out from the gas blowing hole 10d collides, and may be provided for each gas blowing hole 10d. Only one sheet may be provided for all the gas blowing holes 10d of the gas pipe 10c.
As shown in FIG. 2, after the gas blown out from the gas blowing hole 10d collides with the concave surface 21a of the baffle plate 21, it proceeds along the concave surface 21a, and the tip 21b of the concave surface 21a and the outer surface 10d of the gas pipe 10c. It flows out toward the substrate to be processed K from the gap g formed between the two. The gas is diffused before the gas exits the blowout hole and flows out of the gap g. Further, when the gas flows out of the gap g, the space rapidly expands to promote (promote) the gas diffusion. Will be.

Thereby, after the gas blown out from the gas blowing hole 10d is sufficiently diffused, it reaches the surface of the substrate to be processed, so that a uniform film thickness and film quality can be formed on the substrate surface, and the gas The gap (distance) D1 between the tube 10c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, the film forming speed can be increased, and the film quality can be improved. Thinning (miniaturization) can be achieved.
In addition, since the flow of gas toward the deposition preventing plate 12 is restricted (suppressed) by the baffle plate 21, the gap (distance) D2 between the gas pipe 10c and the deposition preventing plate 12 can be reduced. Further reduction in thickness (miniaturization) of the film forming unit can be achieved.
At this time, if strong plasma is generated between the baffle plate 21 and the gas pipe 10c, there is a possibility that particles are generated and the film quality may be deteriorated or the film forming speed may be lowered. The gap between the gas pipes 10c is a distance at which plasma is not easily generated, and is preferably 1 mm to 5 mm.

A third embodiment of the electrode according to the present invention will be described with reference to FIG. The electrode 30 in the present embodiment is the same as that in the first embodiment described above except for the opening direction of the gas blowing hole 10d of the first embodiment described above, that is, the direction in which the gas blows out. is there. Therefore, description of these components is omitted here, and only the direction in which the gas blowing holes are directed will be described.
In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment.

  As shown in FIG. 3, in the electrode 30 in the present embodiment, the gas blowing holes 30d provided in each gas pipe 30c are formed toward the tangential direction on the substrate K side of the adjacent gas pipe 30c. . That is, the main flow of gas is blown out toward the surface of the adjacent gas pipe 30c on the substrate K side.

Thereby, after the gas blown out from the gas blowing holes 30d is sufficiently diffused in the space S, it reaches the surface of the substrate to be processed K, so that a uniform film thickness and film quality are formed on the substrate surface. In addition, the gap (distance) D1 between the gas pipe 30c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, so that the film forming speed can be increased and the film quality can be improved. Thus, it is possible to reduce the thickness (downsize) of the film forming unit.
Further, since the gas blown out from the gas blowing hole 30d reaches the side of the adjacent gas pipe 30c (which becomes an electrode), that is, the plasma sheath region around the electrode in a short time, powder (particles) is generated. It becomes difficult to realize a high-quality film formation that is more uniform and has fewer defects.
Further, since the main flow of gas is blown toward the surface of the adjacent gas pipe 30c on the substrate K side, the gap (distance) D2 between the gas pipe 10c and the deposition preventing plate 12 is reduced. Therefore, the film forming unit can be further reduced in thickness (downsized).

A fourth embodiment of the electrode according to the present invention will be described with reference to FIG. The electrode 40 in this embodiment is different in the opening direction of the gas blowing holes 10d and 30d in the first embodiment and the third embodiment, that is, the direction in which the gas is blown out. The same as the first embodiment and the third embodiment. Therefore, description of these components is omitted here, and only the direction in which the gas blowing holes are directed will be described.
In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment and 3rd Embodiment.

  As shown in FIG. 4, in the electrode 40 in this embodiment, the gas blowing holes 40d provided in each gas pipe 40c are formed toward the tangential direction of the adjacent gas pipe 40c on the adhesion preventing plate 12 side. . That is, it is provided so that the main flow of gas is blown out toward the surface of the adjacent gas pipe 40c on the side of the adhesion-preventing plate 12.

Thereby, after the gas blown out from the gas blowing holes 40d is sufficiently diffused in the space S, it reaches the surface of the substrate to be processed K, so that a uniform film thickness and film quality are formed on the substrate surface. In addition, the gap (distance) D1 between the gas pipe 40c and the substrate to be processed K can be reduced to 5 mm to 40 mm, preferably 15 mm to 35 mm, so that the film forming speed can be increased and the film quality can be improved. Thus, it is possible to reduce the thickness (downsize) of the film forming unit.
Further, since the gas blown out from the gas blowing hole 30d reaches the side of the adjacent gas pipe 30c (which becomes an electrode), that is, the plasma sheath region around the electrode in a short time, powder (particles) is generated. It becomes difficult to realize a high-quality film formation that is more uniform and has fewer defects.
Further, since the main flow of gas is blown out toward the surface of the adjacent gas pipe 30c on the adhesion preventing plate 12 side, the gap (distance) D1 between the gas pipe 10c and the substrate to be processed K is further reduced. Therefore, the film forming unit can be further reduced in thickness (downsized).

A fifth embodiment of the electrode according to the present invention will be described with reference to FIG. The electrode 50 in this embodiment is different from the gas pipe 30c of the third embodiment described above in the cross-sectional shape. That is, in the third embodiment, the cross-sectional shape of the gas pipe 30c is circular, but in the fifth embodiment, the cross-sectional shape of the gas pipe 50c is oval. Further, since the other components are the same as those in the third embodiment described above, description of these components is omitted here.
In addition, the same code | symbol is attached | subjected to the member same as 3rd Embodiment.

  As shown in FIG. 5, in the electrode 50 in this embodiment, the cross-sectional shape of each gas pipe 50c is made into an oval shape. That is, in each gas pipe 50c, in the cross section, the pipe diameter (short diameter) d1 in the arrangement direction of the gas pipe 50c (or the extending direction of the upper gas header 10a and the lower gas header 10b) is orthogonal to the arrangement direction. It is shorter than the tube diameter (major axis) d2 in the direction. In other words, the pipe diameter d1 in the arrangement direction of the gas pipes 50c is reduced without reducing the cross-sectional area of the flow path. Here, d2 / d1 is, for example, 2-4.

By reducing the tube diameter d1, the distance between the gas pipe 50c and the gas pipe 50c, that is, the pitch P described above can be reduced accordingly, so that the number of the gas pipes 50c can be increased, and the electrode plasma Uniformity can be improved and more uniform film formation can be realized.
Further, by increasing the tube diameter (major axis) d2 in the direction perpendicular to the arrangement direction, the conventional passage cross-sectional area is ensured and the gas passage resistance in the gas pipe 50c does not increase, so the gas blowing holes 50d Thus, uniform gas can be blown out, the uniformity of the electrode plasma can be improved, a more uniform film formation can be realized, and the film formation speed can be improved.

A sixth embodiment of the electrode according to the present invention will be described with reference to FIG. The electrode 60 in the present embodiment is basically the same as the conventional electrode described above, and in order to have a uniform film thickness and film quality distribution, the size of the electrode is larger than the substrate to be processed K. The influence of the uneven plasma density distribution that is likely to occur is prevented from appearing in the film forming part, but the gas pipe 60c ′ that does not face the substrate to be processed K is not provided with a gas blowing hole 60d. It is very different from the conventional one. That is, no gas blowing hole 60d is provided at all in a gas pipe (for example, the gas pipe located on the leftmost side in FIG. 1) that does not face the substrate to be processed K. Since other components are the same as those in the above-described embodiment, description of these components is omitted here.
In addition, the same code | symbol is attached | subjected to the member same as embodiment mentioned above.

  As shown in FIG. 6, in the electrode 60 in the present embodiment, the gas pipe 60c ′ located on the outermost side (the leftmost and rightmost sides in FIG. 6), that is, the heater cover 11 (or the substrate pressing member 11a) described above. The gas pipe 60 ′ in which the substrate K to be processed is not provided is provided with no gas blowing hole 60d, and is used only as an electrode pipe.

This eliminates gas blowout that does not contribute to film formation (or hardly contributes), and can suppress gas waste, thereby enabling effective use of gas and reducing gas consumption. Manufacturing cost can be reduced.
Further, since it is not necessary to provide the gas blowing hole 60d in the gas pipe 60c ′ not facing the substrate to be processed K, the step of processing the hole can be omitted and the manufacturing cost can be reduced. .

A seventh embodiment of the electrode according to the present invention will be described with reference to FIG. The electrode 70 in the present embodiment is basically the same as the conventional electrode described above, but the pitch between the gas blowing holes and the gas blowing holes is shifted from each other by ½ pitch between adjacent gas pipes. It differs greatly from the conventional one in that it is formed. Since other components are the same as those in the above-described embodiment, description of these components is omitted here.
In addition, the same code | symbol is attached | subjected to the member same as embodiment mentioned above.

As shown in FIG. 7, in the electrode 70 according to the present embodiment, another gas adjoining one gas pipe 70c is placed between one gas blowing hole 70d of one gas pipe 70c and the gas blowing hole 70d adjacent thereto. The gas blowing holes are arranged so that the gas blowing holes 70d ′ of the gas pipe 70c ′ are located. That is, as shown in FIG. 7, the gas blowing holes are shifted by ½ pitch and are arranged in a staggered manner.
FIGS. 8A and 8B are views of the gas blowing holes provided in the gas pipe as viewed from the front, where FIG. 8A shows the present invention and FIG. 8B shows the conventional one. In FIG. 8, the hatched portion indicates a portion where the gas concentration is low, that is, a region where the gas supply is insufficient (insufficient). Further, the portion other than the hatched portion indicates the diffusion range of the gas blown out from the gas blowing hole when reaching a predetermined distance from the gas blowing hole. 8A, the shape of the hatched portion (that is, the portion where the gas concentration is low) is more complicated than that of FIG. 8B, the region where the gas concentration is low is reduced, and gas diffusion ( It can be seen that (or mixing) is further accelerated.

  Thereby, after the gas blown out from the gas blowing holes 70d and 70d ′ is sufficiently diffused in the space S, it reaches the surface of the substrate to be processed K, so that a uniform film thickness and film quality are formed on the substrate surface. Can be formed.

The present invention is not limited to the above-described embodiment, and can be modified or modified in any way without departing from the technical idea of the present invention.
The gas blowing direction is not limited to FIGS. 1, 3, and 4, and may be any direction as long as the main flow of the gas does not hit the substrate to be processed K perpendicularly.
Further, as shown in FIG. 1, FIG. 3, and FIG. 4, the gas blowing direction need not be a direction orthogonal to the extending direction of the gas pipe. For example, in FIG. It can also be blown out.
Furthermore, it is also possible to combine the gas pipes or the units of holes on the gas pipes that blow out gas in different directions.

Furthermore, the gas blowing direction from each gas pipe is not limited to one direction. For example, the gas can be blown out in two directions, that is, the direction shown in FIG. 1 and the direction shown in FIG. .
Furthermore, a gas blowing hole as shown in FIG. 1, FIG. 3, or FIG. 4 is newly provided in the gas tube of the conventional electrode configured so that the main flow of the gas is perpendicular to the surface of the substrate to be processed. It can also be done.

  Furthermore, the cross-sectional shape of the gas pipe 50c shown in FIG. 5 is not limited to an oval shape. It may be square.

Furthermore, the gas pipe 60c ′ in which the gas blowing hole 60d shown in FIG. 6 is not provided is not provided only in the region not located at the position facing the substrate to be processed K, and is provided, for example, in the central portion. It is also possible to arrange them alternately with the gas pipes 60c having the gas blowing holes 60d.
Furthermore, the direction of the gas blowing hole 60d shown in FIG. 6 does not have to be provided toward the substrate to be processed K, and can be directed in any direction as described above.
For example, when the direction of the gas blowing hole is oriented in the direction shown in FIG. 1, in other words, only one of the central part is the gas pipe 60c provided with the gas blowing hole 60d, and other gases. The tube may be a gas tube 60c ′ without a gas blowing hole.

  Furthermore, the direction of the gas blowing holes 70d and 70d 'shown in FIG. 7 does not need to be provided toward the substrate to be processed K, and can be directed, for example, as shown in FIG.

It is a figure which shows 1st Embodiment of the electrode which concerns on this invention, Comprising: (a) is a partial cross section figure, (b) is a partial longitudinal cross section figure. It is a principal part enlarged view which shows 2nd Embodiment of the electrode which concerns on this invention. It is a figure which shows 3rd Embodiment of the electrode which concerns on this invention, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view. It is a figure which shows 4th Embodiment of the electrode which concerns on this invention, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view. It is a figure which shows 5th Embodiment of the electrode which concerns on this invention, Comprising: (a) is a partial cross-sectional view, (b) is a partial longitudinal cross-sectional view. It is a schematic perspective view which shows 6th Embodiment of the electrode which concerns on this invention. It is a schematic perspective view which shows 7th Embodiment of the electrode which concerns on this invention. It is the partial front view which looked at a part of gas blowing hole provided in the gas pipe shown in FIG. 7 from the front, Comprising: (a) is based on this invention, (b) is a conventional one. 1 is an overall perspective view of a cluster type vacuum processing apparatus according to an embodiment of the present invention. It is a schematic block diagram of the film forming chamber of the vacuum processing apparatus which concerns on embodiment of this invention. It is a whole block diagram of the film-forming unit arrange | positioned in the film-forming chamber of FIG. It is a sectional side view of the film forming chamber shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Electrode 10a Upper gas header 10b Lower gas header 10c Gas pipe 10d Gas blowing hole 11 Heater cover 12 Depositing board (film formation cover)
20 electrode 21 baffle plate 30 electrode 30c gas pipe 30d gas blowout hole 40 electrode 40c gas pipe 40d gas blowout hole 50 electrode 50c gas pipe 50d gas blowout hole 60 electrode 60c gas pipe 60c 'gas pipe 60d gas blowout hole 70 electrode 70c gas pipe 70c 'gas pipe 70d gas blowing hole 70d' gas blowing hole 801 Cluster type vacuum processing apparatus (vacuum processing apparatus)
915 Heater cover 918 Deposition plate (film forming cover)
K substrate to be processed S space

Claims (10)

Disposed between a heater cover and a film-forming cover for supporting a substrate to be processed, having a function as an electrode while supplying gas into a space surrounded by the heater cover and the film-forming cover; and An electrode comprising an upper gas header, a lower gas header, and a plurality of gas pipes connected between the upper gas header and the lower gas header,
The gas pipe located outside the position facing the substrate to be processed is not provided with a gas blowing hole provided for blowing out the gas into the space.   The said gas blowing hole is perforated so that the main flow of the gas blown from the said gas blowing hole may not turn to the direction which hits perpendicularly with respect to the surface of the said to-be-processed substrate. Electrodes.   The electrode according to claim 2, wherein the gas blowing hole is formed on a side opposite to a side where the substrate to be processed is located.   The electrode according to claim 3, wherein a baffle plate is provided at a position facing the gas blowing hole.   The gas blowing hole is drilled so that the main flow of the gas blown out from the gas blowing hole is along a tangent line drawn from the gas blowing hole toward the substrate side surface of the adjacent gas pipe. The electrode according to claim 2.   The gas blowing hole is drilled so that the main flow of the gas blown out from the gas blowing hole is along a tangent line that is drawn from the gas blowing hole toward the surface of the adjacent gas pipe on the film forming cover side. The electrode according to claim 2.   The electrode according to claim 2, wherein the gas blowing holes are perforated so that gas is blown out in at least two directions with respect to one gas pipe.   The gas blowing holes are provided at an equal pitch with respect to one gas pipe, and the gas blowing holes of the gas pipe adjacent to the one gas pipe are the same as the gas blowing holes provided in the one gas pipe. The electrode according to any one of claims 1 to 7, wherein the electrode is provided with a / 2 pitch shift.   The electrode according to any one of claims 1 to 8, wherein a length of the gas pipes in the arrangement direction is shorter than a length in a direction orthogonal to the arrangement direction.   A vacuum processing apparatus comprising: a heater cover that supports a substrate to be processed; a film-forming cover; and the electrode according to claim 1.

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