JP2010153680A5 - - Google Patents
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- JP2010153680A5 JP2010153680A5 JP2008331822A JP2008331822A JP2010153680A5 JP 2010153680 A5 JP2010153680 A5 JP 2010153680A5 JP 2008331822 A JP2008331822 A JP 2008331822A JP 2008331822 A JP2008331822 A JP 2008331822A JP 2010153680 A5 JP2010153680 A5 JP 2010153680A5
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上記課題を解決するために、本発明のプラズマ処理装置は、真空容器と、前記真空容器内に配置され被加工試料を載置する試料台と、前記試料台に対向し前記被加工試料直径よりも大きな直径のガス供給面を有するガス供給手段とを有し、前記被加工試料の表面処理を行うプラズマ処理装置において、前記ガス供給手段のガス供給面の前記被加工試料に面する領域には複数の同一直径のガス噴出し孔が配置されており、前記ガス供給面に前記被加工試料直径の1倍から1.1倍の範囲内に前記ガス噴出し孔を、前記被加工試料直径よりも内側にあるガス噴出し孔の孔数密度の1.5倍から4倍の範囲内の孔数密度で配置したことを特徴とする。 In order to solve the above-mentioned problems, a plasma processing apparatus of the present invention comprises a vacuum vessel, a sample stage placed in the vacuum vessel for placing a sample to be processed, and a diameter of the sample to be processed that faces the sample stage and And a gas supply means having a gas supply surface having a large diameter, and in a plasma processing apparatus for performing a surface treatment of the sample to be processed, a region of the gas supply surface of the gas supply means facing the sample to be processed is provided. A plurality of gas ejection holes having the same diameter are arranged, and the gas ejection holes are formed on the gas supply surface within a range of 1 to 1.1 times the workpiece diameter. Is also arranged with a hole number density in the range of 1.5 to 4 times the hole number density of the gas ejection holes inside .
また、真空容器と、前記真空容器内に配置され被加工試料を載置する試料台と、前記試料台に対向し前記被加工試料直径よりも大きな直径のガス供給面を有するガス供給手段とを有し、前記被加工試料の表面処理を行うプラズマ処理装置において、前記ガス供給手段のガス供給面の前記被加工試料に面する領域には複数の同一直径のガス噴出し孔が配置されており、前記ガス供給面に前記被加工試料直径の1倍から1.1倍の範囲内に前記被加工試料直径よりも内側にあるガス噴出し孔直径の1.1倍から1.5倍の範囲内の直径の値で複数の前記ガス噴出し孔を配置したことを特徴とする。
A vacuum vessel; a sample stage disposed in the vacuum vessel on which a sample to be processed is placed; and a gas supply unit having a gas supply surface facing the sample stage and having a diameter larger than the diameter of the sample to be processed. And a plasma processing apparatus for performing a surface treatment of the sample to be processed, wherein a plurality of gas ejection holes having the same diameter are arranged in a region of the gas supply surface of the gas supply means facing the sample to be processed. In the range of 1 to 1.1 times the diameter of the sample to be processed on the gas supply surface, a range of 1.1 to 1.5 times the diameter of the gas injection hole inside the diameter of the sample to be processed A plurality of the gas ejection holes are arranged with a value of the inner diameter .
Claims (4)
前記ガス供給手段のガス供給面の前記被加工試料に面する領域には複数の同一直径のガス噴出し孔が配置されており、
前記ガス供給面に前記被加工試料直径の1倍から1.1倍の範囲内に前記ガス噴出し孔を、前記被加工試料直径よりも内側にあるガス噴出し孔の孔数密度の1.5倍から4倍の範囲内の孔数密度で配置したことを特徴とするプラズマ処理装置。 A vacuum vessel, a sample stage disposed in the vacuum vessel for placing a sample to be processed, and a gas supply unit having a gas supply surface facing the sample stage and having a diameter larger than the diameter of the sample to be processed. In the plasma processing apparatus for performing the surface treatment of the sample to be processed,
A plurality of gas ejection holes having the same diameter are arranged in a region facing the sample to be processed on the gas supply surface of the gas supply means,
The gas ejection holes are provided on the gas supply surface within a range of 1 to 1.1 times the diameter of the sample to be processed, and the number density of the gas ejection holes on the inner side of the diameter of the sample to be processed is 1. A plasma processing apparatus, which is arranged with a hole density in a range of 5 to 4 times .
前記ガス供給手段のガス供給面の前記被加工試料に面する領域には複数の同一直径のガス噴出し孔が配置されており、
前記ガス供給面に前記被加工試料直径の1倍から1.1倍の範囲内に前記被加工試料直径よりも内側にあるガス噴出し孔直径の1.1倍から1.5倍の範囲内の直径の値で複数の前記ガス噴出し孔を配置したことを特徴とするプラズマ処理装置。 A vacuum vessel, a sample stage disposed in the vacuum vessel for placing a sample to be processed, and a gas supply unit having a gas supply surface facing the sample stage and having a diameter larger than the diameter of the sample to be processed. In the plasma processing apparatus for performing the surface treatment of the sample to be processed,
A plurality of gas ejection holes having the same diameter are arranged in a region facing the sample to be processed on the gas supply surface of the gas supply means,
On the gas supply surface, within the range of 1 to 1.1 times the diameter of the sample to be processed, within the range of 1.1 to 1.5 times the diameter of the gas ejection hole inside the diameter of the sample to be processed. A plasma processing apparatus in which a plurality of the gas ejection holes are arranged with a value of the diameter .
前記ガス供給面と前記試料台の前記試料が載置される面との間の距離が24mmにされたことを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1 or 2,
A plasma processing apparatus , wherein a distance between the gas supply surface and a surface on which the sample is placed is 24 mm .
前記被加工試料直径をD、前記被加工試料から前記ガス供給面までの距離をLとした時、アスペクト比(D/L)が2以上であることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 3,
A plasma processing apparatus , wherein an aspect ratio (D / L) is 2 or more, where D is a diameter of the sample to be processed and L is a distance from the sample to be processed to the gas supply surface .
Priority Applications (3)
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JP2008331822A JP5268626B2 (en) | 2008-12-26 | 2008-12-26 | Plasma processing equipment |
KR1020090006817A KR101039087B1 (en) | 2008-12-26 | 2009-01-29 | Plasma processing apparatus |
US12/392,237 US20100163187A1 (en) | 2008-12-26 | 2009-02-25 | Plasma processing apparatus |
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JP2008331822A JP5268626B2 (en) | 2008-12-26 | 2008-12-26 | Plasma processing equipment |
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JP2010153680A JP2010153680A (en) | 2010-07-08 |
JP2010153680A5 true JP2010153680A5 (en) | 2012-02-16 |
JP5268626B2 JP5268626B2 (en) | 2013-08-21 |
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JP2008331822A Expired - Fee Related JP5268626B2 (en) | 2008-12-26 | 2008-12-26 | Plasma processing equipment |
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US (1) | US20100163187A1 (en) |
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