TWI257130B - Plasma processing apparatus and method of designing the same - Google Patents

Plasma processing apparatus and method of designing the same

Info

Publication number
TWI257130B
TWI257130B TW094105927A TW94105927A TWI257130B TW I257130 B TWI257130 B TW I257130B TW 094105927 A TW094105927 A TW 094105927A TW 94105927 A TW94105927 A TW 94105927A TW I257130 B TWI257130 B TW I257130B
Authority
TW
Taiwan
Prior art keywords
plasma
processing apparatus
distribution
plasma processing
producing portion
Prior art date
Application number
TW094105927A
Other languages
Chinese (zh)
Other versions
TW200540988A (en
Inventor
Shinzo Uchiyama
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200540988A publication Critical patent/TW200540988A/en
Application granted granted Critical
Publication of TWI257130B publication Critical patent/TWI257130B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma

Abstract

Disclosed is a plasma processing apparatus having a plasma producing portion and a porous plate provided between the plasma producing portion and an object to be processed, wherein the porous plate has a plurality of holes which are made non-uniform with respect to at least one of shape, size and disposition. Specifically, the shape, the size or the disposition of the holes is determined on the basis of an active species distribution at the plasma producing portion and of diffusion calculation, so that plasma active species adjacent the object to be processed has desired concentration and distribution. This assures uniform plasma distribution adjacent the object while a decrease of plasma density can be well suppressed.
TW094105927A 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same TWI257130B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004056618A JP2005251803A (en) 2004-03-01 2004-03-01 Plasma processing apparatus and method of designing the same

Publications (2)

Publication Number Publication Date
TW200540988A TW200540988A (en) 2005-12-16
TWI257130B true TWI257130B (en) 2006-06-21

Family

ID=34908925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105927A TWI257130B (en) 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same

Country Status (5)

Country Link
US (1) US20050194097A1 (en)
JP (1) JP2005251803A (en)
KR (1) KR100712172B1 (en)
CN (1) CN100407380C (en)
TW (1) TWI257130B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088199A (en) * 2005-09-22 2007-04-05 Canon Inc Processing equipment
CN100405537C (en) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma reaction device
JP2009545101A (en) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド Plasma source
CN101490789B (en) 2006-07-20 2011-04-13 阿维扎技术有限公司 Ion sources
US8425741B2 (en) * 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101682155B1 (en) * 2015-04-20 2016-12-02 주식회사 유진테크 Substrate processing apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (en) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The Shower electrode for plasma cvd
JPH07101685B2 (en) * 1989-01-26 1995-11-01 富士通株式会社 Microwave plasma processing equipment
JP2886752B2 (en) * 1991-11-05 1999-04-26 キヤノン株式会社 Microwave introduction device having endless annular waveguide and plasma processing device provided with the device
US5487875A (en) * 1991-11-05 1996-01-30 Canon Kabushiki Kaisha Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device
JPH06204181A (en) * 1992-12-29 1994-07-22 Ibiden Co Ltd Electrode plate for plasma etching
JPH0845910A (en) * 1994-07-29 1996-02-16 Nippon Steel Corp Plasma treatment device
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
JPH11350143A (en) * 1998-06-02 1999-12-21 Toshiba Corp Deposition apparatus
JP2000058294A (en) * 1998-08-07 2000-02-25 Furontekku:Kk Plasma treatment device
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP2001023955A (en) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp Plasma processing apparatus
JP3889280B2 (en) 2002-01-07 2007-03-07 忠弘 大見 Plasma processing equipment

Also Published As

Publication number Publication date
KR100712172B1 (en) 2007-04-27
CN1664996A (en) 2005-09-07
US20050194097A1 (en) 2005-09-08
KR20060043213A (en) 2006-05-15
JP2005251803A (en) 2005-09-15
TW200540988A (en) 2005-12-16
CN100407380C (en) 2008-07-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees