JP3889280B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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Publication number
JP3889280B2
JP3889280B2 JP2002000944A JP2002000944A JP3889280B2 JP 3889280 B2 JP3889280 B2 JP 3889280B2 JP 2002000944 A JP2002000944 A JP 2002000944A JP 2002000944 A JP2002000944 A JP 2002000944A JP 3889280 B2 JP3889280 B2 JP 3889280B2
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Japan
Prior art keywords
plasma
processing apparatus
insulating plate
antenna member
planar antenna
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002000944A
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JP2003203869A (en
Inventor
哲 大沢
忠弘 大見
昌樹 平山
哲也 後藤
尚久 後藤
俊明 本郷
Original Assignee
忠弘 大見
尚久 後藤
東京エレクトロン株式会社
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Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus used when processing is performed by applying plasma generated by microwaves to a semiconductor wafer or the like.
[0002]
[Prior art]
In recent years, with the increase in the density and miniaturization of semiconductor products, plasma processing apparatuses may be used for processes such as film formation, etching, and ashing in the manufacturing process of semiconductor products, and in particular, 0.1 mTorr ( 13.3 mPa) to several tens of mTorr (several Pa) of a relatively low pressure and a high vacuum state, it is possible to stably generate a plasma. Therefore, using microwaves, or a magnetic field from a microwave and a ring coil There is a tendency to use a microwave plasma apparatus that generates a high-density plasma by combining them.
Such a plasma processing apparatus is disclosed in JP-A-3-191073, JP-A-5-343334, JP-A-9-181052 by the present applicant, and the like. Here, a general plasma processing apparatus using a microwave will be schematically described with reference to FIG. FIG. 8 is a schematic configuration diagram showing a conventional general plasma processing apparatus.
[0003]
In FIG. 8, the plasma processing apparatus 2 includes a mounting table 6 on which a semiconductor wafer W is mounted in a processing container 4 that can be evacuated, and microwaves are applied to a ceiling portion facing the mounting table 6. An insulating plate 8 made of a disc-shaped aluminum nitride or the like that is transmitted is provided in an airtight manner.
A disk-shaped planar antenna member 10 having a thickness of about several millimeters on the upper surface of the insulating plate 8 and, for example, a dielectric for shortening the wavelength of the microwave in the radial direction of the planar antenna member 10 as necessary. The slow wave material 12 which consists of is installed. Above the slow wave material 12, a ceiling cooling jacket 16 in which a cooling water flow path 14 for flowing cooling water is formed is provided so as to cool the slow wave material 12 and the like. The antenna member 10 has a large number of microwave radiation holes 18 formed of, for example, substantially circular through holes. The microwave radiation holes 18 are generally arranged concentrically or spirally. Then, an internal cable 22 of the coaxial waveguide 20 is connected to the central portion of the planar antenna member 10 to guide, for example, 2.45 GHz microwave generated from a microwave generator (not shown). Then, while propagating the microwaves radially in the radial direction of the antenna member 10, the microwaves are emitted from the microwave radiation holes 18 provided in the antenna member 10 and are transmitted through the insulating plate 8, so that the lower processing container 4. A microwave is introduced into the chamber, and a plasma is generated in the processing space S in the processing chamber 4 by the microwave to perform predetermined plasma processing such as etching and film formation on the semiconductor wafer.
[0004]
[Problems to be solved by the invention]
By the way, the insulating plate 8 that divides the ceiling portion of the processing container 4 generally transmits most of the microwaves downward using aluminum nitride (AlN) or the like having a relatively low dielectric loss. However, in the vicinity of the periphery of the antenna member 10, the microwave is reflected by the wall surface of the processing container 4, and the microwave is transmitted through the slow wave material 12 made of a dielectric and the insulating plate 8. A standing wave along the circumferential direction of the antenna member 10 and the insulating plate 8 is likely to be generated. As a result, an abnormal discharge 24 as indicated by an arrow is generated between the side wall of the processing vessel 4 and the peripheral portion of the insulating plate 8, not only the in-plane uniformity of the plasma density is deteriorated, but also sputtering due to the abnormal discharge 24. There was a problem that the process treatment was adversely affected by the phenomenon.
The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to prevent the occurrence of abnormal discharge in this portion by suppressing the occurrence of standing waves directed in the circumferential direction in the peripheral portion of a planar antenna member or the like, and further to form plasma. An object of the present invention is to provide a plasma processing apparatus with high power efficiency that can prevent leakage of microwaves from the periphery of the region.
[0005]
[Means for Solving the Problems]
  The invention defined in claim 1 is provided with a processing container in which a ceiling portion is opened and the inside thereof is made evacuable, an insulating plate mounted in an airtight manner on the opening of the ceiling portion of the processing container, and an object to be processed. A microwave for plasma generation from a plurality of microwave radiation holes formed at a predetermined pitch above the insulating plate and a mounting table provided in the processing vessel for placing the insulating plate on the insulating plate; A planar antenna member that is transmitted and introduced into the processing container, a slow wave material that is provided above the planar antenna member to reduce the wavelength of the microwave, and a predetermined gas is introduced into the processing container Gas supply means toRupuIn the plasma processing apparatus, a comb-shaped Faraday shield electrode means is provided between a peripheral portion of the planar antenna member and a peripheral portion of the plasma forming region in the processing container. It is.
  According to this, since the Faraday shield electrode means suppresses the occurrence of standing waves in the circumferential direction in the vicinity of the peripheral portion of the planar antenna member, it is possible to prevent the occurrence of abnormal discharge in this portion. As a result, the in-plane uniformity of the plasma density in the processing vessel can be improved, and the occurrence of sputtering that adversely affects the plasma processing can be suppressed.
[0006]
In this case, for example, as defined in claim 2, the Faraday shield electrode means has a plurality of comb members extending in the radial direction of the processing container.
For example, as defined in claim 3, the length of the comb member is set to a length substantially equal to or longer than ¼ of the wavelength when the microwave propagates through the insulating plate.
[0007]
  For example, as defined in claim 4, the pitch of the comb members is set to a length substantially equal to or less than ¼ of the wavelength when the microwave propagates through the insulating plate.
  Further, for example, as defined in claim 5, the comb of the Faraday shield electrode means is provided.ElementAre embedded in the insulating plate.
[0008]
The invention defined in claim 6 is provided with a processing container in which a ceiling part is opened and the inside can be evacuated, an insulating plate mounted in an airtight manner on the opening of the ceiling part of the processing container, and an object to be processed. A microwave for plasma generation from a plurality of microwave radiation holes formed at a predetermined pitch above the insulating plate and a mounting table provided in the processing vessel for placing the insulating plate on the insulating plate; A planar antenna member that is transmitted and introduced into the processing container, a slow wave material that is provided above the planar antenna member to reduce the wavelength of the microwave, and a predetermined gas is introduced into the processing container In a plasma processing apparatus having a gas supply means for introducing a predetermined gas into the processing container, a Faraday shield effect is generated at the periphery of the planar antenna member. It is a plasma processing apparatus according to claim in which a plurality of shielding grooves are formed.
According to this, since the generation of standing waves in the circumferential direction in the vicinity of the periphery of the planar antenna member is suppressed by the plurality of shield grooves that generate the Faraday shield effect, the occurrence of abnormal discharge in this portion is prevented. It becomes possible. As a result, the in-plane uniformity of the plasma density in the processing vessel can be improved, and the occurrence of sputtering that adversely affects the plasma processing can be suppressed.
[0009]
In this case, for example, as defined in claim 7, the shield groove extends in a radial direction of the processing container.
For example, as defined in claim 8, the length of the shield groove is set to a length substantially equal to or more than ¼ of a wavelength when the microwave propagates through the slow wave material. .
[0010]
  For example, as defined in claim 9, the pitch of the shield groove is set to a length substantially equal to or less than ¼ of the wavelength when the microwave propagates through the slow wave material.
  Further, for example, as defined in claim 10, comb-shaped Faraday shield electrode means is provided between the peripheral portion of the planar antenna member and the peripheral portion of the plasma forming region in the processing container. Yes.
  According to this, by the synergistic effect of the plurality of shield grooves and the Faraday shield electrode means for generating the Faraday shield effect, it is possible to further suppress the generation of standing waves in the circumferential direction in the vicinity of the peripheral portion of the planar antenna member.It becomes possible.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of a plasma processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
1 is a block diagram showing an example of a plasma processing apparatus according to the present invention, FIG. 2 is a plan view showing a planar antenna member of the plasma processing apparatus shown in FIG. 1, FIG. 3 is a plan view showing Faraday shield electrode means, and FIG. FIG. 2 is an enlarged sectional view showing a part of the plasma processing apparatus.
In this embodiment, a case where the plasma processing apparatus is applied to a plasma CVD (Chemical Vapor Deposition) process will be described. As shown in the figure, this plasma processing apparatus 30 has a processing vessel 32 whose side walls and bottom are made of a conductor such as aluminum and formed entirely in a cylindrical shape, and the processing space is sealed inside. This processing space S becomes a plasma formation region.
[0012]
In the processing container 32, a mounting table 34 on which, for example, a semiconductor wafer W as a target object is mounted is accommodated on the upper surface. The mounting table 34 is formed in a substantially cylindrical shape which is made convex and flat, for example, by anodized aluminum or the like, and its lower part is supported by a support table 36 which is also formed in a column shape by aluminum or the like. The support base 36 is installed at the bottom of the processing container 32 via an insulating material 38.
An electrostatic chuck or a clamping mechanism (not shown) for holding the wafer is provided on the upper surface of the mounting table 34, and the mounting table 34 and the support table 36 are matched with a matching box 42 via a power supply line 40. For example, it is connected to a high frequency power supply 44 for bias of 13.56 MHz. In some cases, the bias high-frequency power supply 44 is not provided.
[0013]
The support table 36 that supports the mounting table 34 is provided with a cooling jacket 46 for flowing cooling water or the like for cooling the wafer during plasma processing. In addition, you may provide the heater for heating in this mounting base 34 as needed.
For example, a plasma gas supply nozzle 48 made of quartz pipe for supplying a plasma gas, for example, argon gas, or a processing gas, for example, a deposition gas, is introduced into the side wall of the processing container 32 as gas supply means. A processing gas supply nozzle 50 made of quartz pipe is provided, and these nozzles 48 and 50 are respectively connected to a plasma gas source 64 and a processing gas by gas supply passages 52 and 54 via mass flow controllers 56 and 58 and on-off valves 60 and 62, respectively. Connected to source 66. The deposition gas as the process gas is SiHFour , O2 , N2 Gas or the like can be used.
[0014]
A gate valve 68 that opens and closes when a wafer is loaded into and unloaded from the inside of the container side wall is provided outside the container side wall, and a cooling jacket 69 that cools the side wall is provided. In addition, an exhaust port 70 is provided at the bottom of the container, and an exhaust path 72 connected to a vacuum pump (not shown) is connected to the exhaust port 70, and a predetermined interior of the processing container 32 is provided as necessary. Vacuum can be drawn to pressure.
The ceiling portion of the processing vessel 32 is opened, and an insulating plate 74 having an overall thickness of about 20 mm that is permeable to microwaves made of a ceramic material such as AlN is used as a seal such as an O-ring. It is provided airtight via the member 76. The Faraday shield electrode means 77, which is a feature of the present invention, is provided around the insulating plate 74. The structure of the Faraday shield electrode means 77 will be described later.
[0015]
A disc-shaped planar antenna member 78 and a slow wave member 80 having a high dielectric constant are provided on the upper surface of the insulating plate 74. Specifically, the planar antenna member 78 is configured as a bottom plate of a waveguide box 82 made of a conductive hollow cylindrical container formed integrally with the processing container 32, and is described above in the processing container 32. It is provided so as to face the mounting table 34. The structure of the planar antenna member 78 will be described later.
The waveguide box 82 and the processing container 32 are both grounded, and the outer tube 84A of the coaxial waveguide 84 is connected to the center of the upper portion of the waveguide box 82. The slow wave member 80 is connected to the central portion of the planar antenna member 78 through a through hole 86 at the center. The coaxial waveguide 84 is connected to a microwave generator 92 of 2.45 GHz, for example, via a mode converter 88 and a waveguide 90, and propagates microwaves to the planar antenna member 78. It has become. This frequency is not limited to 2.45 GHz, and other frequencies such as 8.35 GHz may be used. As this waveguide, a waveguide having a circular or rectangular cross section or a coaxial waveguide can be used. A ceiling cooling jacket 96 in which a cooling water flow path 94 for flowing cooling water is formed is provided in the upper part of the waveguide box 82 so as to cool the slow wave material 80 and the like. In the waveguide box 82, the upper surface of the planar antenna member 78 is provided with the slow wave material 80 having the high dielectric constant characteristics, and due to this wavelength shortening effect, the in-tube wavelength of the microwave is shortened. ing. As the slow wave material 80, for example, aluminum nitride which is the same material as the insulating plate 74 can be used.
[0016]
The planar antenna member 78 is made of a conductive material having a diameter of 300 to 400 mm and a thickness of 1 to several mm, for example, 5 mm, for example, for a 8-inch wafer. As shown in FIG. 2, the circular plate is provided with a large number of microwave radiation holes 98 made of, for example, circular through-holes, which are arranged substantially equally on the antenna member 78. The arrangement form of the microwave radiation holes 98 is not particularly limited. For example, the microwave radiation holes 98 may be arranged concentrically, spirally, or radially. A plurality of shield grooves 100 (see FIG. 2) that generate the Faraday shield effect, which is a feature of the present invention, are formed in the peripheral portion of the planar antenna member 78. Specifically, the shield grooves 100 are formed along the radial direction of the planar antenna member 78 and are arranged at a predetermined interval (pitch) along the circumferential direction of the planar antenna member 98. Yes. Each shield groove 100 is formed by punching the peripheral part of a circular aluminum plate into a long and narrow closed groove shape as described above, and the outer peripheral end side of the antenna member 78 has a width A1 of about 5 mm. As shown in FIG. 4, the antenna member 78 is fixed and the portion is grounded by holding the portion of the pressure margin 102.
[0017]
The width W1 of each shield groove 100 is set to, for example, about 1 to 9 mm, and the length L1 is substantially a quarter or more of the wavelength when the microwave propagates through the slow wave material 80. Is set. In addition, the pitch P1 of each shield groove 100 provided adjacently is set to a length substantially equal to or less than ¼ of the wavelength when the microwave propagates through the slow wave material 80. In the vicinity of the periphery of the antenna member 78, a standing wave directed in the circumferential direction is prevented from being generated as much as possible. Here, as described above, assuming that the microwave frequency is 2.45 GHz and the material of the slow wave material 80 is aluminum nitride (AlN) having a dielectric constant of about 9, it propagates through the slow wave material 80. The wavelength λ1 of the microwave is about 40 mm. Accordingly, since this quarter wavelength is about 10 mm, the length L1 of the shield groove 100 is set to about 10 mm or more, and the pitch P1 is set to about 10 mm or less. If the length L1 is excessively increased, the plasma forming region is reduced. Therefore, the maximum value of the length L1 is preferably about 40 mm, for example.
[0018]
Further, the Faraday shield electrode means 77 provided in the peripheral portion of the insulating plate 74 is entirely formed in a comb shape by a conductive material such as aluminum as shown in FIG. Specifically, as shown in FIG. 3, the Faraday shield electrode means 77 extends from the inner surface of the circular ring-shaped shield body 77A and the inner surface of the ring-shaped shield body 77A toward the center, that is, the processing container. The comb members 77B extend in the radial direction of 32, and the comb members 77B are arranged at a predetermined interval (pitch) along the circumferential direction of the ring-shaped shield body 77A.
[0019]
The width W2 of each of the comb members 77B is set to, for example, about 1 to 9 mm, and the length L2 is substantially a quarter or more of a wavelength when the microwave propagates through the insulating plate 74. Is set. Further, the pitch P2 of the adjacent comb members 77B is set to a length substantially equal to or less than ¼ of the wavelength when the microwave propagates through the slow wave material 80. In the vicinity of the peripheral portion of the insulating plate 74, a standing wave directed in the circumferential direction is prevented from being generated as much as possible. Here, it is assumed that the microwave frequency is 2.45 GHz as described above, and the material of the insulating plate 74 is aluminum nitride (AlN) having the same dielectric constant as the material of the slow wave material 90. The wavelength λ1 of the microwave propagating through the insulating plate 74 is about 40 mm. Therefore, since this 1/4 wavelength is about 10 mm, the length L2 of the comb member 77B is about 10 mm or more, and the pitch P2 is about 10 mm or less. If the length L2 is excessively increased, the plasma forming region is reduced. Therefore, the maximum value of the length L2 is preferably about 40 mm, for example.
[0020]
As shown in FIG. 1, the Faraday shield electrode means 77 formed in this way sandwiches the ring-shaped shield body 77A in a recess formed in the inner wall of the processing vessel 32, and also includes a comb member 77B. Is embedded in the insulating plate 74. Specifically, the insulating plate 74 is divided into two parts, an upper insulating plate member 74A and a lower insulating plate member 74B. The upper insulating plate member 74A and the lower insulating plate member 74B are divided into two parts. The comb member 77B is embedded in the insulating plate 74 by being closely coupled to these peripheral portions so as to sandwich the comb member 77B.
[0021]
Next, a processing method performed using the plasma processing apparatus configured as described above will be described.
First, the semiconductor wafer W is accommodated in the processing container 32 by the transfer arm (not shown) via the gate valve 68, and the wafer W is mounted on the upper surface of the mounting table 34 by moving the lifter pins (not shown) up and down. Place on the surface.
Then, while maintaining the inside of the processing container 32 within a predetermined process pressure, for example, within a range of 0.01 to several Pa, for example, argon gas is supplied from the plasma gas supply nozzle 48 while controlling the flow rate, and from the processing gas supply nozzle 50. For example, SiHFour , O2 , N2 The deposition gas such as is supplied while controlling the flow rate. At the same time, the microwave generated by the microwave generator 92 is supplied to the planar antenna member 78 through the waveguide 90 and the coaxial waveguide 84 to reduce the wavelength in the processing space S by the slow wave material 80. A microwave is introduced, thereby generating plasma in the processing space S and performing a predetermined plasma process, for example, a film forming process by plasma CVD.
[0022]
Here, for example, a 2.45 GHz microwave generated by the microwave generator 82 propagates through the coaxial waveguide 84 in the TEM mode after mode conversion and reaches the planar antenna member 78 in the waveguide box 82, for example. While the circular antenna member 78 to which the internal cable 84B is connected is propagated radially from the central portion to the peripheral portion, a large number of concentric or spiral shapes are formed on the antenna member 78 substantially equally. The microwave is introduced into the processing space S immediately below the antenna member 78 through the insulating plate 74 through the microwave radiation hole 98.
The argon gas excited by the microwave is turned into plasma and diffused downward to activate the processing gas to create active species. By the action of the active species, the surface of the wafer W is processed, for example, plasma CVD processing is performed. Will be given.
[0023]
Here, when the microwave propagates from the central portion of the planar antenna member 78 to the peripheral portion thereof, the vibration surface of the microwave rotates due to the Faraday effect of the slow wave material 80 and the insulating plate 74 made of a dielectric material, There is a risk that standing waves along the circumferential direction are generated in the peripheral portion of the planar antenna member 78 and the peripheral portion of the insulating plate 74. However, in the present invention, a plurality of shield grooves 100 for generating the Faraday shield effect are formed in the peripheral portion of the planar antenna member 78, and the Faraday shield electrode means is also provided in the peripheral portion of the insulating plate 74. Since it is provided, the generation of the standing wave as described above in the circumferential direction can be substantially reliably prevented.
[0024]
That is, the standing wave which is about to be generated along the circumferential direction in the peripheral portion of the planar antenna member 78 is prevented from being generated by the shield groove 100 formed in this portion. Further, the standing wave which is to be generated along the circumferential direction in the peripheral portion of the insulating plate 74 is prevented from being generated by the comb member 77B of the Faraday shield electrode means 77 provided in this portion.
Therefore, it is possible to prevent abnormal discharge from occurring in the peripheral portion of the ceiling portion in the processing container 32, and as a result, it is possible to greatly improve the uniformity of the plasma density in the processing space S in the in-plane direction. .
Here, since the comb member 77B of the Faraday shield electrode means 77 is provided so as to be embedded in the insulating plate 74, abnormal discharge may occur between the comb member 77B and the planar antenna member 78. Can be prevented.
[0025]
In the above embodiment, the case where the Faraday shield electrode means 77 is provided in the peripheral portion of the insulating plate 74 has been described as an example. However, the present invention is not limited to this installation position, and the peripheral portion of the planar antenna member 78 and the plasma formation region (processing) The same effect as described above can be exhibited regardless of the position between the peripheral portion of the space S). For example, as shown in FIG. 5, the Faraday shield electrode means 77 may be installed on the upper surface side of the insulating plate 74, that is, between the insulating plate 74 and the antenna member 78.
Here, the rectangular shield groove 100 formed in the planar antenna member 78 has a shape in which the four sides are completely surrounded. However, the present invention is not limited to this. For example, as shown in FIG. The part of the holding margin 102 (see FIG. 2) on the side may also be cut out, and the shape of the shield groove 100 may be formed to be a rectangular shape with one side opened to the outer peripheral side.
[0026]
Further, the shape of the microwave radiation hole 98 formed in the planar antenna member 78 is not limited to a circle, and may be, for example, a slit having a long groove, and the slit-shaped radiation hole 98 is formed as shown in FIG. You may make it arrange in a T shape.
Although the case where aluminum nitride is used as the material of the slow wave material 80 and the insulating plate 74 is described here as an example, the present invention is not limited to this, and other dielectric materials such as alumina and quartz can also be used.
Further, here, an example has been described in which both the Faraday shield electrode means 77 and the shield groove 100 of the planar antenna member 78 are provided, and the functions of both are acted synergistically to suppress the occurrence of standing waves. However, the present invention is not limited to this, and at least one of the configurations may be adopted.
In this embodiment, the case where the film forming process is performed on the semiconductor wafer has been described as an example. However, the present invention is not limited to this and can be applied to other plasma processes such as a plasma etching process and a plasma ashing process.
Further, the object to be processed is not limited to a semiconductor wafer, and can be applied to a glass substrate, an LCD substrate, and the like.
[0027]
【The invention's effect】
  As described above, according to the plasma processing apparatus of the present invention, the following excellent operational effects can be exhibited.
  Claim1 to 5According to the invention, since the Faraday shield electrode means suppresses the generation of standing waves in the circumferential direction in the vicinity of the peripheral portion of the planar antenna member, the occurrence of abnormal discharge in this portion can be prevented. As a result, the in-plane uniformity of the plasma density in the processing vessel can be increased, and the occurrence of sputtering that adversely affects the plasma processing can be suppressed.
  According to the inventions according to claims 6 to 9, since the generation of standing waves in the circumferential direction in the vicinity of the periphery of the planar antenna member is suppressed by the plurality of shield grooves that generate the Faraday shield effect, The occurrence of abnormal discharge can be prevented. As a result, the in-plane uniformity of the plasma density in the processing vessel can be increased, and the occurrence of sputtering that adversely affects the plasma processing can be suppressed.
  ClaimTo 10According to the invention, the generation of standing waves in the circumferential direction in the vicinity of the peripheral portion of the planar antenna member is further suppressed by the synergistic effect of the plurality of shield grooves and the Faraday shield electrode means for generating the Faraday shield effect. Can do.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an example of a plasma processing apparatus according to the present invention.
2 is a plan view showing a planar antenna member of the plasma processing apparatus shown in FIG. 1. FIG.
FIG. 3 is a plan view showing Faraday shield electrode means.
FIG. 4 is an enlarged cross-sectional view showing a part of the plasma processing apparatus.
FIG. 5 is a partially enlarged view showing a part of a modification of the plasma processing apparatus of the present invention.
FIG. 6 is a plan view showing a modification of the planar antenna member of the plasma processing apparatus of the present invention.
FIG. 7 is a plan view showing a modification of the microwave radiation hole of the planar antenna member of the plasma processing apparatus of the present invention.
FIG. 8 is a schematic configuration diagram showing a conventional general plasma processing apparatus.
[Explanation of symbols]
30 Plasma processing equipment
32 processing container
34 Mounting table
48, 50 nozzle (gas supply means)
74 Insulation plate
74A Upper insulating plate member
74B Lower insulation plate member
77 Faraday shield electrode means
77A Shield body
77B Comb member
78 Planar antenna member
80 Slow wave material
92 Microwave generator
98 Microwave radiation hole
S treatment space (plasma formation region)
W Semiconductor wafer (object to be processed)

Claims (10)

  1. A processing vessel in which the ceiling is opened and the inside can be evacuated;
    An insulating plate hermetically attached to the opening of the ceiling of the processing vessel;
    A mounting table provided in the processing container for mounting the object to be processed;
    A planar antenna member for introducing microwaves for plasma generation into the processing container through a plurality of microwave radiation holes provided at a predetermined pitch provided above the insulating plate;
    A slow wave material provided above the planar antenna member for shortening the wavelength of the microwave;
    In a plasma processing apparatus having a gas supply means for introducing a predetermined gas into the processing container,
    A plasma processing apparatus, wherein a comb-shaped Faraday shield electrode means is provided between a peripheral portion of the planar antenna member and a peripheral portion of a plasma forming region in the processing container.
  2.   The plasma processing apparatus according to claim 1, wherein the Faraday shield electrode means has a plurality of comb members extending in a radial direction of the processing container.
  3.   3. The plasma processing apparatus according to claim 2, wherein the length of the comb member is set to a length substantially equal to or more than 1/4 of a wavelength when the microwave propagates through the insulating plate. .
  4.   4. The pitch of the comb members is set to a length substantially equal to or less than ¼ of a wavelength when the microwave propagates through the insulating plate. The plasma processing apparatus as described.
  5.   The plasma processing apparatus according to claim 2, wherein the comb member of the Faraday shield electrode means is embedded in the insulating plate.
  6. A processing vessel in which the ceiling is opened and the inside can be evacuated;
    An insulating plate hermetically attached to the opening of the ceiling of the processing vessel;
    A mounting table provided in the processing container for mounting the object to be processed;
    A planar antenna member for introducing microwaves for plasma generation into the processing container through a plurality of microwave radiation holes provided at a predetermined pitch provided above the insulating plate;
    A slow wave material provided above the planar antenna member for shortening the wavelength of the microwave;
    In a plasma processing apparatus having a gas supply means for introducing a predetermined gas into the processing container, a plastic having a gas supply means for introducing the predetermined gas into the processing container,
    A plasma processing apparatus, wherein a plurality of shield grooves for generating a Faraday shield effect are formed in a peripheral portion of the planar antenna member.
  7.   The plasma processing apparatus according to claim 6, wherein the shield groove extends in a radial direction of the processing container.
  8.   The length of the said shield groove is set to the length substantially 1/4 or more of the wavelength when the said microwave propagates | transmits the said slow wave material, The Claim 6 or 7 characterized by the above-mentioned. Plasma processing equipment.
  9.   9. The pitch of the shield groove is set to a length substantially equal to or less than ¼ of a wavelength when the microwave propagates through the slow wave material. The plasma processing apparatus according to 1.
  10. 10. A comb-shaped Faraday shield electrode means is provided between a peripheral portion of the planar antenna member and a peripheral portion of a plasma formation region in the processing container. The plasma processing apparatus according to 1.
JP2002000944A 2002-01-07 2002-01-07 Plasma processing equipment Expired - Fee Related JP3889280B2 (en)

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KR101782384B1 (en) * 2010-07-02 2017-09-28 삼성전자주식회사 Microwave plasma processing apparatus
US8980047B2 (en) 2010-07-02 2015-03-17 Samsung Electronics Co., Ltd. Microwave plasma processing apparatus
KR101870668B1 (en) * 2011-09-01 2018-08-02 세메스 주식회사 Apparatus for treating substrate

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