USD990534S1 - Weighted lift pin - Google Patents
Weighted lift pin Download PDFInfo
- Publication number
- USD990534S1 USD990534S1 US29/750,123 US202029750123F USD990534S US D990534 S1 USD990534 S1 US D990534S1 US 202029750123 F US202029750123 F US 202029750123F US D990534 S USD990534 S US D990534S
- Authority
- US
- United States
- Prior art keywords
- lift pin
- weighted
- weighted lift
- view
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Description
Claims (1)
- The ornamental design for a weighted lift pin, as shown and described.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/750,123 USD990534S1 (en) | 2020-09-11 | 2020-09-11 | Weighted lift pin |
JPD2021-4208F JP1692231S (en) | 2020-09-11 | 2021-03-01 | |
TW110301101F TWD215535S (en) | 2020-09-11 | 2021-03-02 | Weighted lift pin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/750,123 USD990534S1 (en) | 2020-09-11 | 2020-09-11 | Weighted lift pin |
Publications (1)
Publication Number | Publication Date |
---|---|
USD990534S1 true USD990534S1 (en) | 2023-06-27 |
Family
ID=77172890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/750,123 Active USD990534S1 (en) | 2020-09-11 | 2020-09-11 | Weighted lift pin |
Country Status (3)
Country | Link |
---|---|
US (1) | USD990534S1 (en) |
JP (1) | JP1692231S (en) |
TW (1) | TWD215535S (en) |
Citations (5038)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR686869A (en) | 1930-12-31 | 1930-07-31 | Jacob Ets | Mixer tap |
GB400010A (en) | 1931-10-05 | 1933-10-19 | Johann Puppe | Improvements in and connected with ingot moulds |
US2059480A (en) | 1933-09-20 | 1936-11-03 | John A Obermaier | Thermocouple |
US2161626A (en) | 1937-09-25 | 1939-06-06 | Walworth Patents Inc | Locking device |
US2240163A (en) | 1938-09-30 | 1941-04-29 | Permutit Co | Valve apparatus for controlling hydraulic or pneumatic machines |
US2266416A (en) | 1939-01-14 | 1941-12-16 | Western Electric Co | Control apparatus |
US2280778A (en) | 1939-09-29 | 1942-04-28 | John C Andersen | Garden tool |
US2410420A (en) | 1944-01-01 | 1946-11-05 | Robert B Bennett | Scraper |
US2441253A (en) | 1944-10-30 | 1948-05-11 | Rohim Mfg Company Inc | Valve |
US2480557A (en) | 1946-08-02 | 1949-08-30 | Harry S Cummins | Detachable thermocouple housing |
US2563931A (en) | 1946-04-02 | 1951-08-14 | Honeywell Regulator Co | Rate responsive thermocouple |
US2660061A (en) | 1949-03-05 | 1953-11-24 | Dominion Eng Works Ltd | Immersion type thermocouple temperature measuring device |
US2745640A (en) | 1953-09-24 | 1956-05-15 | American Viscose Corp | Heat exchanging apparatus |
GB752277A (en) | 1953-10-28 | 1956-07-11 | Canadian Ind 1954 Ltd | Improved thermocouple unit |
US2847320A (en) | 1956-05-08 | 1958-08-12 | Ohio Commw Eng Co | Method for gas plating with aluminum organo compounds |
US2990045A (en) | 1959-09-18 | 1961-06-27 | Lipe Rollway Corp | Thermally responsive transmission for automobile fan |
US3015709A (en) * | 1959-04-09 | 1962-01-02 | Ite Circuit Breaker Ltd | Cover lift pin |
US3038951A (en) | 1961-01-19 | 1962-06-12 | Leeds & Northrup Co | Fast acting totally expendable immersion thermocouple |
US3089507A (en) | 1963-05-14 | Air eject system control valve | ||
US3094396A (en) | 1959-07-07 | 1963-06-18 | Continental Can Co | Method of and apparatus for curing internal coatings on can bodies |
US3197682A (en) | 1961-04-13 | 1965-07-27 | Pure Oil Co | Safet electro-responsive-fluid chuck |
FR1408266A (en) | 1964-06-30 | 1965-08-13 | Realisations Electr Et Electro | Connection socket for thermocouples |
US3232437A (en) | 1963-03-13 | 1966-02-01 | Champlon Lab Inc | Spin-on filter cartridge |
US3263502A (en) | 1964-01-21 | 1966-08-02 | Redwood L Springfield | Multiple thermocouple support |
US3332286A (en) | 1965-09-02 | 1967-07-25 | Gen Electric | Thermocouple pressure gauge |
US3410349A (en) | 1964-01-02 | 1968-11-12 | Ted R. Troutman | Tubing scraper and method |
US3420622A (en) | 1965-02-27 | 1969-01-07 | Hoechst Ag | Process for obtaining fluorine compounds from digestion solutions of crude phosphates with nitric acid or hydrochloric acid |
GB1186889A (en) | 1966-06-02 | 1970-04-08 | Western Electric Co | Methods and apparatus for introducing Impurities into Gas Streams |
US3588192A (en) | 1969-06-02 | 1971-06-28 | Trw Inc | Hydraulic skid control system |
US3634740A (en) | 1970-04-20 | 1972-01-11 | Addressograph Multigraph | Electrostatic holddown |
US3647716A (en) | 1970-04-03 | 1972-03-07 | Westvaco Corp | Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon |
US3647387A (en) | 1970-03-19 | 1972-03-07 | Stanford Research Inst | Detection device |
US3713899A (en) | 1970-11-12 | 1973-01-30 | Ford Motor Co | Thermocouple probe |
US3718429A (en) | 1971-03-15 | 1973-02-27 | Du Pont | No-no2 analyzer |
US3796182A (en) | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
US3814128A (en) | 1971-05-17 | 1974-06-04 | Tecalemit Engineering | Valve assembly having an actuator with a camming ball |
US3833492A (en) | 1971-09-22 | 1974-09-03 | Pollution Control Ind Inc | Method of producing ozone |
US3854443A (en) | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
FR2233614A1 (en) | 1973-06-13 | 1975-01-10 | Thermal Syndicate Ltd | |
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
US3867205A (en) | 1972-04-20 | 1975-02-18 | Commissariat Energie Atomique | Refractory metal hot-junction thermocouple |
US3885504A (en) | 1971-01-09 | 1975-05-27 | Max Baermann | Magnetic stabilizing or suspension system |
US3887790A (en) | 1974-10-07 | 1975-06-03 | Vernon H Ferguson | Wrap-around electric resistance heater |
US3904371A (en) | 1974-03-04 | 1975-09-09 | Beckman Instruments Inc | Chemiluminescent ammonia detection |
US3913058A (en) | 1972-07-25 | 1975-10-14 | Ngk Spark Plug Co | Thermosensor |
US3913617A (en) | 1972-11-20 | 1975-10-21 | Hoogovens Ijmuiden Bv | Apparatus for mixing two gas flows |
US3916270A (en) | 1974-05-02 | 1975-10-28 | Tektronix Inc | Electrostatic holddown apparatus |
SU494614A1 (en) | 1974-05-05 | 1975-12-05 | Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср | Remote level measurement device |
US3947685A (en) | 1974-02-15 | 1976-03-30 | Deutsche Forschungs- Und Versuchsanstalt Fur Luft- Und Raumfahrt E.V. | Method and arrangement for determining nitric oxide concentration |
US3960559A (en) | 1972-10-19 | 1976-06-01 | Fuji Photo Film Co., Ltd. | Method of making a semiconductor device utilizing a light-sensitive etching agent |
US3962004A (en) | 1974-11-29 | 1976-06-08 | Rca Corporation | Pattern definition in an organic layer |
US3983401A (en) | 1975-03-13 | 1976-09-28 | Electron Beam Microfabrication Corporation | Method and apparatus for target support in electron projection systems |
US3997638A (en) | 1974-09-18 | 1976-12-14 | Celanese Corporation | Production of metal ion containing carbon fibers useful in electron shielding applications |
US4048110A (en) | 1976-05-12 | 1977-09-13 | Celanese Corporation | Rhenium catalyst composition |
US4054071A (en) | 1975-06-17 | 1977-10-18 | Aetna-Standard Engineering Company | Flying saw with movable work shifter |
US4058430A (en) | 1974-11-29 | 1977-11-15 | Tuomo Suntola | Method for producing compound thin films |
US4079944A (en) | 1975-12-05 | 1978-03-21 | Durley Iii Benton A | Cueing device for phonographs |
US4093491A (en) | 1971-06-24 | 1978-06-06 | Whelpton Hugh G | Fastener installation method |
GB1514921A (en) | 1975-04-02 | 1978-06-21 | Kanji S | Record-playing apparatus |
US4099041A (en) | 1977-04-11 | 1978-07-04 | Rca Corporation | Susceptor for heating semiconductor substrates |
USD249341S (en) | 1976-11-11 | 1978-09-12 | Umc Industries, Inc. | Electro-mechanical pulser |
US4126027A (en) | 1977-06-03 | 1978-11-21 | Westinghouse Electric Corp. | Method and apparatus for eccentricity correction in a rolling mill |
US4134425A (en) | 1976-03-12 | 1979-01-16 | Siemens Aktiengesellschaft | Device for distributing flowing media over a flow cross section |
US4145699A (en) | 1977-12-07 | 1979-03-20 | Bell Telephone Laboratories, Incorporated | Superconducting junctions utilizing a binary semiconductor barrier |
US4149237A (en) | 1977-09-16 | 1979-04-10 | The Foxboro Company | Industrial process control system |
US4152760A (en) | 1977-09-16 | 1979-05-01 | The Foxboro Company | Industrial process control system |
US4157751A (en) | 1976-08-13 | 1979-06-12 | Gewerkschaft Eisenhutte Westfalia | Scraper-chain conveyors |
US4164959A (en) | 1977-04-15 | 1979-08-21 | The Salk Institute For Biological Studies | Metering valve |
US4176630A (en) | 1977-06-01 | 1979-12-04 | Dynair Limited | Automatic control valves |
US4179530A (en) | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
US4181330A (en) | 1977-03-22 | 1980-01-01 | Noriatsu Kojima | Horn shaped multi-inlet pipe fitting |
US4184188A (en) | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
US4194536A (en) | 1976-12-09 | 1980-03-25 | Eaton Corporation | Composite tubing product |
US4217463A (en) | 1978-03-13 | 1980-08-12 | National Distillers And Chemical Corporation | Fast responsive, high pressure thermocouple |
US4229064A (en) | 1978-10-25 | 1980-10-21 | Trw Inc. | Polarizing adapter sleeves for electrical connectors |
US4234449A (en) | 1979-05-30 | 1980-11-18 | The United States Of America As Represented By The United States Department Of Energy | Method of handling radioactive alkali metal waste |
US4241000A (en) | 1978-08-24 | 1980-12-23 | The United States Of America As Represented By The Secretary Of The Army | Process for producing polycrystalline cubic aluminum oxynitride |
GB2051875A (en) | 1979-05-29 | 1981-01-21 | Standard Telephones Cables Ltd | Preparing metal coatings |
US4314763A (en) | 1979-01-04 | 1982-02-09 | Rca Corporation | Defect detection system |
US4322592A (en) | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4324611A (en) | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
US4333735A (en) | 1981-03-16 | 1982-06-08 | Exxon Research & Engineering Co. | Process and apparatus for measuring gaseous fixed nitrogen species |
EP0058571A1 (en) | 1981-02-18 | 1982-08-25 | National Research Development Corporation | Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process |
US4355912A (en) | 1980-09-12 | 1982-10-26 | Haak Raymond L | Spring loaded sensor fitting |
JPS5819462A (en) | 1981-07-24 | 1983-02-04 | Kawasaki Steel Corp | Electric welded steel pipe |
JPS589954B2 (en) | 1975-02-28 | 1983-02-23 | 松下電器産業株式会社 | rhythm hatsei sochi |
US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
FR2517790A1 (en) | 1981-12-07 | 1983-06-10 | British Nuclear Fuels Ltd | Process gas valve esp. of uranium isotope separator - with sealed operating arrangement providing back-up for bellows seal |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4393013A (en) | 1970-05-20 | 1983-07-12 | J. C. Schumacher Company | Vapor mass flow control system |
USD269850S (en) | 1981-07-22 | 1983-07-26 | Drag Specialties, Inc. | Handlebar grip |
US4401507A (en) | 1982-07-14 | 1983-08-30 | Advanced Semiconductor Materials/Am. | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
US4412133A (en) | 1982-01-05 | 1983-10-25 | The Perkin-Elmer Corp. | Electrostatic cassette |
US4413022A (en) | 1979-02-28 | 1983-11-01 | Canon Kabushiki Kaisha | Method for performing growth of compound thin films |
US4414492A (en) | 1982-02-02 | 1983-11-08 | Intent Patent A.G. | Electronic ballast system |
US4436674A (en) | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4444990A (en) | 1982-09-08 | 1984-04-24 | Servo Corporation Of America | Heat sensing device |
JPS5979545A (en) | 1982-10-29 | 1984-05-08 | Toshiba Corp | Electrostatic chucking device |
USD274122S (en) | 1983-06-20 | 1984-06-05 | Drag Specialties, Inc. | Motorcycle handlebar grip |
US4454370A (en) | 1982-09-07 | 1984-06-12 | Wahl Instruments, Inc. | Thermocouple surface probe |
US4455193A (en) | 1982-07-01 | 1984-06-19 | Commissariat A L'energie Atomique | Process for producing the field oxide of an integrated circuit |
JPS59127847A (en) | 1983-01-13 | 1984-07-23 | Tokuda Seisakusho Ltd | Electrostatic chucking unit for sputtering device |
US4465716A (en) | 1982-06-02 | 1984-08-14 | Texas Instruments Incorporated | Selective deposition of composite materials |
US4466766A (en) | 1981-05-20 | 1984-08-21 | Ruska Instrument Corporation | Transfer apparatus |
US4480284A (en) | 1982-02-03 | 1984-10-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Electrostatic chuck plate |
US4479831A (en) | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
US4481300A (en) | 1981-08-31 | 1984-11-06 | Raytheon Company | Aluminum oxynitride having improved optical characteristics and method of manufacture |
US4484061A (en) | 1982-05-13 | 1984-11-20 | Sys-Tec, Inc. | Temperature control system for liquid chromatographic columns employing a thin film heater/sensor |
JPS59211779A (en) | 1983-05-14 | 1984-11-30 | Toshiba Corp | Compressor |
US4488506A (en) | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
US4495024A (en) | 1981-08-26 | 1985-01-22 | Edward Bok | Method for deposition of fluid and gaseous media on substrates for their transport |
US4496828A (en) | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4499354A (en) | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
US4502094A (en) | 1981-09-14 | 1985-02-26 | U.S. Philips Corporation | Electrostatic chuck |
US4504439A (en) | 1980-08-14 | 1985-03-12 | Hochtemperatur-Reaktorbau Gmbh | Gas cooled nuclear reactor |
US4512841A (en) | 1984-04-02 | 1985-04-23 | International Business Machines Corporation | RF Coupling techniques |
US4512113A (en) | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
US4520116A (en) | 1981-08-31 | 1985-05-28 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
US4520421A (en) | 1982-08-11 | 1985-05-28 | Hitachi, Ltd. | Specimen supporting device |
JPS60110133A (en) | 1983-01-24 | 1985-06-15 | Toshiba Corp | Fault checking apparatus in electrostatic chuck |
US4527005A (en) | 1984-03-13 | 1985-07-02 | The United States Of America As Represented By The United States Department Of Energy | Spring loaded thermocouple module |
US4534816A (en) | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
US4535628A (en) | 1981-05-22 | 1985-08-20 | Hope Bjoern R | Apparatus for level measurements |
US4537001A (en) | 1983-05-23 | 1985-08-27 | Uppstroem Leif R | Building elements |
US4548688A (en) | 1983-05-23 | 1985-10-22 | Fusion Semiconductor Systems | Hardening of photoresist |
US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
US4554611A (en) | 1984-02-10 | 1985-11-19 | U.S. Philips Corporation | Electrostatic chuck loading |
US4560590A (en) | 1982-02-24 | 1985-12-24 | Edward Bok | Method for applying a coating on a substrate |
US4570328A (en) | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
JPS6138863A (en) | 1984-07-30 | 1986-02-24 | Toshiba Corp | Polishing apparatus |
US4575408A (en) | 1982-08-24 | 1986-03-11 | Edward Bok | Method for floating transport of substrates |
US4575636A (en) | 1984-04-30 | 1986-03-11 | Rca Corporation | Deep ultraviolet (DUV) flood exposure system |
US4578560A (en) | 1982-09-17 | 1986-03-25 | Sumitomo Electric Industries, Ltd. | High frequency induction coupled plasma torch with concentric pipes having flanges thereon |
US4579378A (en) | 1984-10-31 | 1986-04-01 | Snyders Robert V | Mortar joint pointing guide |
US4579623A (en) | 1983-08-31 | 1986-04-01 | Hitachi, Ltd. | Method and apparatus for surface treatment by plasma |
US4579080A (en) | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
US4581520A (en) | 1982-09-07 | 1986-04-08 | Vu Duy Phach | Heat treatment machine for semiconductors |
US4590326A (en) | 1984-06-14 | 1986-05-20 | Texaco Inc. | Multi-element thermocouple |
US4611966A (en) | 1984-05-30 | 1986-09-16 | Johnson Lester R | Apparatus for transferring semiconductor wafers |
US4620998A (en) | 1985-02-05 | 1986-11-04 | Haresh Lalvani | Crescent-shaped polygonal tiles |
US4622918A (en) | 1983-01-31 | 1986-11-18 | Integrated Automation Limited | Module for high vacuum processing |
US4624728A (en) | 1985-06-11 | 1986-11-25 | Tegal Corporation | Pin lift plasma processing |
JPS624231U (en) | 1985-06-22 | 1987-01-12 | ||
USD288556S (en) | 1984-02-21 | 1987-03-03 | Pace, Incorporated | Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards |
WO1987001508A1 (en) | 1985-08-28 | 1987-03-12 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
US4654226A (en) | 1986-03-03 | 1987-03-31 | The University Of Delaware | Apparatus and method for photochemical vapor deposition |
US4653541A (en) | 1985-06-26 | 1987-03-31 | Parker Hannifin Corporation | Dual wall safety tube |
US4655592A (en) | 1983-12-30 | 1987-04-07 | Hamamatsu Systems, Inc. | Particle detection method and apparatus |
US4662987A (en) | 1984-08-01 | 1987-05-05 | Integrated Automation, Limited | Method of double floating transport and processing of wafers within a confined passageway |
US4664769A (en) | 1985-10-28 | 1987-05-12 | International Business Machines Corporation | Photoelectric enhanced plasma glow discharge system and method including radiation means |
US4670126A (en) | 1986-04-28 | 1987-06-02 | Varian Associates, Inc. | Sputter module for modular wafer processing system |
US4681134A (en) | 1986-07-23 | 1987-07-21 | Paris Sr Raymond L | Valve lock |
NL8600255A (en) | 1986-02-03 | 1987-09-01 | Bok Edward | Installation for floating transport and processing of wafers - provides transfer of successive wafers under floating condition through interfacing tunnel passages |
US4693211A (en) | 1985-01-10 | 1987-09-15 | Dainippon Screen Mfg. Co., Ltd. | Surface treatment apparatus |
US4700089A (en) | 1984-08-23 | 1987-10-13 | Fujitsu Limited | Delay circuit for gate-array LSI |
JPS62237236A (en) | 1986-04-09 | 1987-10-17 | Hitachi Ltd | Constant temperature clean work room |
US4707815A (en) | 1979-09-29 | 1987-11-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for a record player distinguishing between recorded and unrecorded portions of a disc |
US4717461A (en) | 1986-09-15 | 1988-01-05 | Machine Technology, Inc. | System and method for processing workpieces |
US4718637A (en) | 1986-07-02 | 1988-01-12 | Mdc Vacuum Products Corporation | High vacuum gate valve having improved metal vacuum joint |
US4720362A (en) | 1981-08-31 | 1988-01-19 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
US4720407A (en) | 1985-12-18 | 1988-01-19 | Heraeus Quarzschmelze Gmbh | Double-walled quartz-glass tube for semiconductor-technology processes |
US4721534A (en) | 1985-09-12 | 1988-01-26 | System Planning Corporation | Immersion pyrometer |
US4721533A (en) | 1986-08-01 | 1988-01-26 | System Planning Corporation | Protective structure for an immersion pyrometer |
US4722298A (en) | 1986-05-19 | 1988-02-02 | Machine Technology, Inc. | Modular processing apparatus for processing semiconductor wafers |
US4724272A (en) | 1984-04-17 | 1988-02-09 | Rockwell International Corporation | Method of controlling pyrolysis temperature |
DE3626724A1 (en) | 1986-08-07 | 1988-02-11 | Siemens Ag | Arrangement for surface testing (examination) |
US4725204A (en) | 1986-11-05 | 1988-02-16 | Pennwalt Corporation | Vacuum manifold pumping system |
US4735259A (en) | 1984-02-21 | 1988-04-05 | Hewlett-Packard Company | Heated transfer line for capillary tubing |
US4738618A (en) | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
US4738748A (en) | 1983-09-30 | 1988-04-19 | Fujitsu Limited | Plasma processor and method for IC fabrication |
US4747367A (en) | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
US4749416A (en) | 1986-08-01 | 1988-06-07 | System Planning Corporation | Immersion pyrometer with protective structure for sidewall use |
JPS63136532A (en) | 1986-11-27 | 1988-06-08 | Nec Kyushu Ltd | Thermal treatment equipment for semiconductor substrate |
US4750520A (en) | 1986-10-16 | 1988-06-14 | Dragerwerk Aktiengesellschaft | Electrically-actuable valve |
US4753856A (en) | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
US4753192A (en) | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
SU1408319A1 (en) | 1987-01-06 | 1988-07-07 | Всесоюзный научно-исследовательский институт аналитического приборостроения | Chemoluminescent gas analyzer for nitrogen oxides |
US4756794A (en) | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
FR2610007A1 (en) | 1987-01-22 | 1988-07-29 | Bmi Fours Ind | Vertical industrial oven with peripheral ventilation |
US4764076A (en) | 1986-04-17 | 1988-08-16 | Varian Associates, Inc. | Valve incorporating wafer handling arm |
US4770590A (en) | 1986-05-16 | 1988-09-13 | Silicon Valley Group, Inc. | Method and apparatus for transferring wafers between cassettes and a boat |
US4771015A (en) | 1985-12-28 | 1988-09-13 | Canon Kabushiki Kaisha | Method for producing an electronic device having a multi-layer structure |
US4775281A (en) | 1986-12-02 | 1988-10-04 | Teradyne, Inc. | Apparatus and method for loading and unloading wafers |
US4776744A (en) | 1985-09-09 | 1988-10-11 | Applied Materials, Inc. | Systems and methods for wafer handling in semiconductor process equipment |
US4780169A (en) | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
US4781511A (en) | 1986-03-25 | 1988-11-01 | Shimizu Construction Co., Ltd. | Semiconductor processing system |
US4789294A (en) | 1985-08-30 | 1988-12-06 | Canon Kabushiki Kaisha | Wafer handling apparatus and method |
US4790258A (en) | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
NL8701549A (en) | 1987-07-01 | 1989-02-01 | Asm International N V Amtc | Magnetron plasma reactor for plasma etching and depositing IC - is filled with ionisable gas subjected to RF and magnetic fields |
US4802441A (en) | 1987-01-08 | 1989-02-07 | Btu Engineering Corporation | Double wall fast cool-down furnace |
US4804086A (en) | 1986-12-22 | 1989-02-14 | Siemens Aktiengesellschaft | Transport container with an interchangeable inside container |
US4808387A (en) | 1987-05-15 | 1989-02-28 | Exxon Chemical Patents Inc. | Stabilization of vanadium tetrachloride |
US4812201A (en) | 1986-07-25 | 1989-03-14 | Tokyo Electron Limited | Method of ashing layers, and apparatus for ashing layers |
US4812217A (en) | 1987-04-27 | 1989-03-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method and apparatus for feeding and coating articles in a controlled atmosphere |
US4821674A (en) | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4827430A (en) | 1987-05-11 | 1989-05-02 | Baxter International Inc. | Flow measurement system |
US4828224A (en) | 1987-10-15 | 1989-05-09 | Epsilon Technology, Inc. | Chemical vapor deposition system |
US4830515A (en) | 1987-12-28 | 1989-05-16 | Omega Engineering, Inc. | Mounting clip for a thermocouple assembly |
US4837113A (en) | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Method for depositing compound from group II-VI |
US4837185A (en) | 1988-10-26 | 1989-06-06 | Intel Corporation | Pulsed dual radio frequency CVD process |
JPH01185176A (en) | 1988-01-18 | 1989-07-24 | Fujitsu Ltd | Processing method using electrostatic adsorption |
US4854263A (en) | 1987-08-14 | 1989-08-08 | Applied Materials, Inc. | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US4854266A (en) | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
US4857382A (en) | 1988-04-26 | 1989-08-15 | General Electric Company | Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides |
US4857137A (en) | 1986-01-31 | 1989-08-15 | Hitachi, Ltd. | Process for surface treatment |
US4858557A (en) | 1984-07-19 | 1989-08-22 | L.P.E. Spa | Epitaxial reactors |
DE8902307U1 (en) | 1989-02-27 | 1989-08-31 | Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried | Device for thermal treatment of semiconductor materials |
US4863374A (en) | 1987-03-27 | 1989-09-05 | Edward Orton, Jr., Ceramic Foundation | Kiln with ventilation system |
US4867629A (en) | 1986-11-20 | 1989-09-19 | Shimizu Construction Co., Ltd. | Dusttight storage cabinet apparatus for use in clean rooms |
US4871523A (en) | 1987-05-15 | 1989-10-03 | Exxon Chemical Patents Inc. | Vanadium tetrachloride stabilization |
US4874273A (en) | 1987-03-16 | 1989-10-17 | Hitachi, Ltd. | Apparatus for holding and/or conveying articles by fluid |
US4880982A (en) | 1987-11-17 | 1989-11-14 | Impex Production & Development A/S (Ltd.) | Fluid indicator for a containment vessel |
US4882199A (en) | 1986-08-15 | 1989-11-21 | Massachusetts Institute Of Technology | Method of forming a metal coating on a substrate |
JPH01296613A (en) | 1988-05-25 | 1989-11-30 | Nec Corp | Method of vapor growth of iii-v compound semiconductor |
DE3836696C1 (en) | 1988-10-28 | 1989-12-07 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Lock for transporting material between clean rooms |
US4886162A (en) | 1987-02-06 | 1989-12-12 | Sgs-Thomson Microelectronics S.P.A. | Container for vacuum storing and/or shipping silicon wafers |
JPH01307229A (en) | 1988-06-06 | 1989-12-12 | Canon Inc | Deposition film forming method |
JPH01313954A (en) | 1988-06-14 | 1989-12-19 | Fujitsu Ltd | Static chuck |
JPH0293071A (en) | 1988-09-29 | 1990-04-03 | Toshiba Corp | Thin film formation |
US4916091A (en) | 1987-11-05 | 1990-04-10 | Texas Instruments Incorporated | Plasma and plasma UV deposition of SiO2 |
US4917556A (en) | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
WO1990004045A1 (en) | 1988-10-14 | 1990-04-19 | Advantage Production Technology Inc. | Semiconductor wafer processing method and apparatus |
US4920918A (en) | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
US4925388A (en) | 1987-08-26 | 1990-05-15 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat treating substrates capable of quick cooling |
US4931135A (en) | 1987-12-25 | 1990-06-05 | Tokyo Electron Limited | Etching method and etching apparatus |
US4934831A (en) | 1989-03-20 | 1990-06-19 | Claud S. Gordon Company | Temperature sensing device |
US4938815A (en) | 1986-10-15 | 1990-07-03 | Advantage Production Technology, Inc. | Semiconductor substrate heater and reactor process and apparatus |
JPH02185038A (en) | 1989-01-11 | 1990-07-19 | Nec Corp | Thermal treatment equipment |
USD309702S (en) | 1986-06-25 | 1990-08-07 | Don Hall | Safety clamp attachment for a hammer |
US4949671A (en) | 1985-10-24 | 1990-08-21 | Texas Instruments Incorporated | Processing apparatus and method |
US4950624A (en) | 1986-09-09 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of depositing films using photo-CVD with chamber plasma cleaning |
US4949848A (en) | 1988-04-29 | 1990-08-21 | Fluoroware, Inc. | Wafer carrier |
JPH02217469A (en) | 1989-02-17 | 1990-08-30 | Hitachi Ltd | Formation of thin film and forming device |
US4956538A (en) | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
US4958061A (en) | 1988-06-27 | 1990-09-18 | Tokyo Electron Limited | Method and apparatus for heat-treating a substrate |
US4962063A (en) | 1988-11-10 | 1990-10-09 | Applied Materials, Inc. | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing |
USD311126S (en) | 1986-12-23 | 1990-10-09 | Joseph Crowley | Shelf extending mounting bracket for additional product display |
US4963506A (en) | 1989-04-24 | 1990-10-16 | Motorola Inc. | Selective deposition of amorphous and polycrystalline silicon |
US4976996A (en) | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US4978567A (en) | 1988-03-31 | 1990-12-18 | Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. | Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
US4984904A (en) | 1987-12-24 | 1991-01-15 | Kawaso Electric Industrial Co., Ltd. | Apparatus for continuously measuring temperature of molten metal and method for making same |
US4985114A (en) | 1988-10-14 | 1991-01-15 | Hitachi, Ltd. | Dry etching by alternately etching and depositing |
US4987102A (en) | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
US4987856A (en) | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
US4989992A (en) | 1988-07-29 | 1991-02-05 | Pomini Farrel S.P.A. | Device for measuring the temperature of the material contained in a closed apparatus |
US4991614A (en) | 1987-06-25 | 1991-02-12 | Kvaerner Engineering A/S | Method and a plant for transport of hydrocarbons over a long distance from an offshore source of hydrocarbons |
JPH0344472A (en) | 1989-07-11 | 1991-02-26 | Seiko Epson Corp | Production of plasma thin film |
US5002632A (en) | 1989-11-22 | 1991-03-26 | Texas Instruments Incorporated | Method and apparatus for etching semiconductor materials |
WO1991004522A1 (en) | 1989-09-12 | 1991-04-04 | Aitec Oy | Synchronized teaching of a robot cell |
US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
WO1991006975A1 (en) | 1989-11-03 | 1991-05-16 | Asm International N.V. | Method for halide etching in the presence of water of semi-conductor substrates |
US5022961A (en) | 1989-07-26 | 1991-06-11 | Dainippon Screen Mfg. Co., Ltd. | Method for removing a film on a silicon layer surface |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
US5027746A (en) | 1988-03-22 | 1991-07-02 | U.S. Philips Corporation | Epitaxial reactor having a wall which is protected from deposits |
JPH03155625A (en) | 1989-11-14 | 1991-07-03 | Seiko Epson Corp | Manufacture of plasma cvd film |
US5049029A (en) | 1987-09-10 | 1991-09-17 | Tokyo Electron Limited | Handling apparatus for transferring a semiconductor wafer or LCD |
JPH03211753A (en) | 1990-01-16 | 1991-09-17 | Fujitsu Ltd | Semiconductor manufacturimg device |
USD320148S (en) | 1988-12-30 | 1991-09-24 | Andrews Edward A | Drill socket |
US5053247A (en) | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
US5057436A (en) | 1989-10-02 | 1991-10-15 | Agmaster, Inc. | Method and apparatus for detecting toxic gases |
US5060322A (en) | 1989-07-27 | 1991-10-29 | Delepine Jean C | Shower room and ceiling element, especially for a shower room |
US5061083A (en) | 1989-06-19 | 1991-10-29 | The United States Of America As Represented By The Department Of Energy | Temperature monitoring device and thermocouple assembly therefor |
US5062386A (en) | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
JPH03248427A (en) | 1990-02-26 | 1991-11-06 | Nec Corp | Manufacture of semiconductor device |
US5064337A (en) | 1988-07-19 | 1991-11-12 | Tokyo Electron Limited | Handling apparatus for transferring carriers and a method of transferring carriers |
US5065698A (en) | 1988-04-11 | 1991-11-19 | Canon Kabushiki Kaisha | Film forming apparatus capable of preventing adhesion of film deposits |
US5067437A (en) | 1988-03-28 | 1991-11-26 | Kabushiki Kaisha Toshiba | Apparatus for coating of silicon semiconductor surface |
US5069591A (en) | 1988-03-24 | 1991-12-03 | Tel Sagami Limited | Semiconductor wafer-processing apparatus |
US5071258A (en) | 1991-02-01 | 1991-12-10 | Vesuvius Crucible Company | Thermocouple assembly |
US5074017A (en) | 1989-01-13 | 1991-12-24 | Toshiba Ceramics Co., Ltd. | Susceptor |
WO1992000477A1 (en) | 1990-06-25 | 1992-01-09 | Asm International N.V. (Amtc) | Three-way valve |
US5082517A (en) | 1990-08-23 | 1992-01-21 | Texas Instruments Incorporated | Plasma density controller for semiconductor device processing equipment |
US5084126A (en) | 1988-12-29 | 1992-01-28 | Texas Instruments Incorporated | Method and apparatus for uniform flow distribution in plasma reactors |
JPH0429313A (en) | 1990-05-24 | 1992-01-31 | Fujitsu Ltd | Device for producing semiconductor crystal |
US5088444A (en) | 1989-03-15 | 1992-02-18 | Kabushiki Kaisha Toshiba | Vapor deposition system |
US5097890A (en) | 1988-06-16 | 1992-03-24 | Tel Sagami Limited | Heat treating apparatus with cooling fluid nozzles |
US5098638A (en) | 1989-04-25 | 1992-03-24 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor device |
US5098865A (en) | 1989-11-02 | 1992-03-24 | Machado Jose R | High step coverage silicon oxide thin films |
US5104514A (en) | 1991-05-16 | 1992-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Protective coating system for aluminum |
JPH04115531A (en) | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | Chemical vapor growth device |
US5107170A (en) | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
US5108192A (en) | 1990-03-07 | 1992-04-28 | Paul Wurth S.A. | Probe for taking gas samples and heat measurements in a shaft furnace |
US5110407A (en) | 1990-03-07 | 1992-05-05 | Hitachi, Ltd. | Surface fabricating device |
US5114683A (en) | 1989-02-13 | 1992-05-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Thermal decomposition trap |
US5117121A (en) | 1989-04-25 | 1992-05-26 | Toto Ltd. | Method of and apparatus for applying voltage to electrostatic chuck |
US5116018A (en) | 1991-04-12 | 1992-05-26 | Automax, Inc. | Lockout modules |
US5119760A (en) | 1988-12-27 | 1992-06-09 | Symetrix Corporation | Methods and apparatus for material deposition |
US5124272A (en) | 1989-08-11 | 1992-06-23 | Seiko Instruments, Inc. | Method of producing field effect transistor |
US5125710A (en) | 1991-05-14 | 1992-06-30 | Angelo Gianelo | Under-platform drawer for trucks |
US5125358A (en) | 1988-07-26 | 1992-06-30 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
USD327534S (en) | 1987-07-30 | 1992-06-30 | CLM Investments, Inc. | Floor drain strainer |
US5130003A (en) | 1990-06-14 | 1992-07-14 | Conrad Richard H | method of powering corona discharge in ozone generators |
US5134965A (en) | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5137286A (en) | 1991-08-23 | 1992-08-11 | General Electric Company | Permanent magnet floating shaft seal |
EP0499004A1 (en) | 1991-02-15 | 1992-08-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Process for manufacturing fiber reinforced ceramic materials by chemical vapor infiltration |
US5151296A (en) | 1989-03-31 | 1992-09-29 | Canon Kk | Method for forming polycrystalline film by chemical vapor deposition process |
US5154301A (en) | 1991-09-12 | 1992-10-13 | Fluoroware, Inc. | Wafer carrier |
US5158128A (en) | 1988-09-01 | 1992-10-27 | Sumitec, Inc. | Thermocouple for a continuous casting machine |
USD330900S (en) | 1990-02-08 | 1992-11-10 | Wakegijig William M | Drill adapter |
US5167716A (en) | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
US5174881A (en) | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
US5176451A (en) | 1990-07-02 | 1993-01-05 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor |
RU1786406C (en) | 1989-12-12 | 1993-01-07 | Научно-Техническое Кооперативное Предприятие "Акцент" | Method and device for flaw detection of planar reflective surfaces |
US5178682A (en) | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
US5178639A (en) | 1990-06-28 | 1993-01-12 | Tokyo Electron Sagami Limited | Vertical heat-treating apparatus |
JPH056880A (en) | 1991-06-27 | 1993-01-14 | Toshiba Corp | Surface treatment method |
US5180435A (en) | 1987-09-24 | 1993-01-19 | Research Triangle Institute, Inc. | Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer |
US5180273A (en) | 1989-10-09 | 1993-01-19 | Kabushiki Kaisha Toshiba | Apparatus for transferring semiconductor wafers |
US5181779A (en) | 1989-11-22 | 1993-01-26 | Nippon Steel Corporation | Thermocouple temperature sensor and a method of measuring the temperature of molten iron |
US5182232A (en) | 1991-04-08 | 1993-01-26 | Micron Technology, Inc. | Metal silicide texturizing technique |
US5183511A (en) | 1986-07-23 | 1993-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus with a glow discharge system |
JPH0523079A (en) | 1991-07-19 | 1993-02-02 | Shimano Inc | Fishing rod and production thereof |
US5186120A (en) | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
USD333606S (en) | 1989-12-12 | 1993-03-02 | Kabushiki Kaisha Kanemitsu | Pulley |
US5192717A (en) | 1989-04-28 | 1993-03-09 | Canon Kabushiki Kaisha | Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method |
US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
US5193912A (en) | 1991-11-18 | 1993-03-16 | Saunders Roger I | Probe for sensing and measuring temperature |
US5193969A (en) | 1991-05-20 | 1993-03-16 | Fortrend Engineering Corporation | Wafer transfer machine |
US5199603A (en) | 1991-11-26 | 1993-04-06 | Prescott Norman F | Delivery system for organometallic compounds |
US5208961A (en) | 1992-02-28 | 1993-05-11 | National Semiconductor Corporation | Semiconductor processing furnace door alignment apparatus and method |
JPH05118928A (en) | 1991-10-25 | 1993-05-14 | Tokyo Electron Ltd | Contact type temperature measuring method |
US5213650A (en) | 1989-08-25 | 1993-05-25 | Applied Materials, Inc. | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
US5219226A (en) | 1991-10-25 | 1993-06-15 | Quadtek, Inc. | Imaging and temperature monitoring system |
US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
EP0550058A2 (en) | 1991-12-30 | 1993-07-07 | Texas Instruments Incorporated | A programmable multizone gas injector for single-wafer semiconductor processing equipment |
JPH05171446A (en) | 1991-12-24 | 1993-07-09 | Furukawa Electric Co Ltd:The | Formation of thin film |
US5226713A (en) | 1989-12-28 | 1993-07-13 | Ebara Corporation | Storage vessel |
US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
US5228114A (en) | 1990-10-30 | 1993-07-13 | Tokyo Electron Sagami Limited | Heat-treating apparatus with batch scheme having improved heat controlling capability |
US5231062A (en) | 1990-08-09 | 1993-07-27 | Minnesota Mining And Manufacturing Company | Transparent aluminum oxynitride-based ceramic article |
US5232508A (en) | 1991-10-07 | 1993-08-03 | Commissariat A L'energie Atomique | Gaseous phase chemical treatment reactor |
US5234526A (en) | 1991-05-24 | 1993-08-10 | Lam Research Corporation | Window for microwave plasma processing device |
US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
US5242501A (en) | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
US5243202A (en) | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
US5242539A (en) | 1991-04-04 | 1993-09-07 | Hitachi, Ltd. | Plasma treatment method and apparatus |
US5246500A (en) | 1991-09-05 | 1993-09-21 | Kabushiki Kaisha Toshiba | Vapor phase epitaxial growth apparatus |
US5246218A (en) | 1992-09-25 | 1993-09-21 | Intel Corporation | Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment |
US5250092A (en) | 1991-08-22 | 1993-10-05 | Nec Corporation | Exhaust apparatus for epitaxial growth system |
US5249960A (en) | 1991-06-14 | 1993-10-05 | Tokyo Electron Sagami Kabushiki Kaisha | Forced cooling apparatus for heat treatment apparatus |
US5252133A (en) | 1990-12-19 | 1993-10-12 | Kabushiki Kaisha Toshiba | Vertically oriented CVD apparatus including gas inlet tube having gas injection holes |
US5252134A (en) | 1991-05-31 | 1993-10-12 | Stauffer Craig M | Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing |
JPH05291142A (en) | 1992-04-15 | 1993-11-05 | Nec Corp | Liquid source supplying equipment |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US5261167A (en) | 1990-09-27 | 1993-11-16 | Tokyo Electron Sagami Limited | Vertical heat treating apparatus |
US5266526A (en) | 1991-03-19 | 1993-11-30 | Kabushiki Kaisha Toshiba | Method of forming trench buried wiring for semiconductor device |
US5268989A (en) | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
US5271967A (en) | 1992-08-21 | 1993-12-21 | General Motors Corporation | Method and apparatus for application of thermal spray coatings to engine blocks |
US5273609A (en) | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
US5277932A (en) | 1991-07-29 | 1994-01-11 | Syracuse University | CVD method for forming metal boride films using metal borane cluster compounds |
US5278494A (en) | 1991-02-19 | 1994-01-11 | Tokyo Electron Yamanashi Limited | Wafer probing test machine |
US5279886A (en) | 1990-01-25 | 1994-01-18 | Ngk Spark Plug Co., Ltd. | Alumina sintered body |
US5279986A (en) | 1989-02-03 | 1994-01-18 | Applied Materials, Inc. | Method for epitaxial deposition |
JPH0616433A (en) | 1992-06-29 | 1994-01-25 | Matsushita Electric Ind Co Ltd | Die for press-forming optical element |
US5280894A (en) | 1992-09-30 | 1994-01-25 | Honeywell Inc. | Fixture for backside wafer etching |
US5284519A (en) | 1990-05-16 | 1994-02-08 | Simon Fraser University | Inverted diffuser stagnation point flow reactor for vapor deposition of thin films |
US5288684A (en) | 1990-03-27 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction |
JPH0653210A (en) | 1992-07-28 | 1994-02-25 | Nec Corp | Semiconductor device |
US5294572A (en) | 1989-03-06 | 1994-03-15 | Asm International N.V. | Method and apparatus for depositing a layer on a substrate |
US5294778A (en) | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
US5295777A (en) | 1992-12-23 | 1994-03-22 | Materials Research Corporation | Wafer transport module with rotatable and horizontally extendable wafer holder |
JPH0684888A (en) | 1992-02-27 | 1994-03-25 | G T C:Kk | Formation of insulation film |
US5298089A (en) | 1991-07-08 | 1994-03-29 | Air Products And Chemicals, Inc. | In-situ generation of heat treating atmospheres using non-cryogenically produced nitrogen |
US5305417A (en) | 1993-03-26 | 1994-04-19 | Texas Instruments Incorporated | Apparatus and method for determining wafer temperature using pyrometry |
US5306946A (en) | 1990-10-15 | 1994-04-26 | Seiko Epson Corporation | Semiconductor device having a passivation layer with silicon nitride layers |
US5306666A (en) | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
US5308650A (en) | 1991-07-06 | 1994-05-03 | Schott Glaswerke | Process and apparatus for the ignition of CVD plasmas |
US5308788A (en) | 1991-09-13 | 1994-05-03 | Motorola, Inc. | Temperature controlled process for the epitaxial growth of a film of material |
US5310456A (en) | 1990-07-30 | 1994-05-10 | Sony Corporation | Dry etching method |
US5310410A (en) | 1990-04-06 | 1994-05-10 | Sputtered Films, Inc. | Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus |
US5312245A (en) | 1993-07-16 | 1994-05-17 | International Business Machines Corporation | Particulate trap for vertical furnace |
US5313061A (en) | 1989-06-06 | 1994-05-17 | Viking Instrument | Miniaturized mass spectrometer system |
JPH06140399A (en) | 1992-10-26 | 1994-05-20 | Nec Corp | Manufacture of metal wire |
US5315092A (en) | 1990-10-11 | 1994-05-24 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such apparatus |
US5314538A (en) | 1991-04-22 | 1994-05-24 | Semiconductor Process Laboratory | Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device |
US5314570A (en) | 1990-07-18 | 1994-05-24 | Sumitomo Electric Industries Ltd. | Process and apparatus for the production of diamond |
US5320218A (en) | 1992-04-07 | 1994-06-14 | Shinko Electric Co., Ltd. | Closed container to be used in a clean room |
US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
US5328360A (en) | 1991-04-03 | 1994-07-12 | Tokyo Election Sagami Kabushiki Kaisha | Heat-treating apparatus |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5335309A (en) | 1991-08-29 | 1994-08-02 | Matsushita Electric Industrial Co., Ltd. | Light-beam heating apparatus |
US5336327A (en) | 1992-06-01 | 1994-08-09 | Motorola, Inc. | CVD reactor with uniform layer depositing ability |
US5338362A (en) | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5340261A (en) | 1991-03-26 | 1994-08-23 | Tokyo Electron Limited | Load-lock unit and wafer transfer system |
US5346961A (en) | 1993-04-07 | 1994-09-13 | Union Carbide Chemicals & Plastics Technology Corporation | Process for crosslinking |
US5348774A (en) | 1993-08-11 | 1994-09-20 | Alliedsignal Inc. | Method of rapidly densifying a porous structure |
US5350480A (en) | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
US5354433A (en) | 1989-04-09 | 1994-10-11 | Asm International N.V. | Method for producing a flow of triisobutylaluminum from liquid triisobutylaluminum containing isobutene |
US5356672A (en) | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
US5356478A (en) | 1992-06-22 | 1994-10-18 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma treatment chamber |
US5360269A (en) | 1989-05-10 | 1994-11-01 | Tokyo Kogyo Kabushiki Kaisha | Immersion-type temperature measuring apparatus using thermocouple |
US5362328A (en) | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
JPH06319177A (en) | 1993-02-24 | 1994-11-15 | Hewlett Packard Co <Hp> | Adaptive remote control system |
US5364667A (en) | 1992-01-17 | 1994-11-15 | Amtech Systems, Inc. | Photo-assisted chemical vapor deposition method |
WO1994027315A1 (en) | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
JPH06338497A (en) | 1993-05-28 | 1994-12-06 | Nec Corp | Chemical vapor growth method |
USD353452S (en) | 1993-04-27 | 1994-12-13 | Groenhoff Larry C | Window adapter for portable box fans |
US5374315A (en) | 1987-03-31 | 1994-12-20 | Advanced Semiconductor Materials America, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US5378501A (en) | 1993-10-05 | 1995-01-03 | Foster; Robert F. | Method for chemical vapor deposition of titanium nitride films at low temperatures |
US5380367A (en) | 1992-12-04 | 1995-01-10 | Cselt - Centro Studi E Laboratori Telecomunicazioni S.P.A. | Vapour generator for chemical vapour deposition systems |
US5382311A (en) | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
EP0634785A1 (en) | 1993-07-13 | 1995-01-18 | Applied Materials, Inc. | Improved susceptor design |
USD354898S (en) | 1992-10-13 | 1995-01-31 | Verdel Innovations | Egg holder for use with a stand for decorating eggs |
JPH0729836A (en) | 1993-07-14 | 1995-01-31 | Sony Corp | Deposition of plasma silicon nitride |
JPH0734936A (en) | 1993-07-16 | 1995-02-03 | Hitachi Ltd | Diagnostic device of engine system |
US5387265A (en) | 1991-10-29 | 1995-02-07 | Kokusai Electric Co., Ltd. | Semiconductor wafer reaction furnace with wafer transfer means |
FR2708624A1 (en) | 1993-07-30 | 1995-02-10 | Neuville Stephane | Process for deposition of a protective coating based on amorphous diamond pseudocarbon or on modified silicon carbide |
US5388945A (en) | 1992-08-04 | 1995-02-14 | International Business Machines Corporation | Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transportable containers |
US5393577A (en) | 1990-06-19 | 1995-02-28 | Nec Corporation | Method for forming a patterned layer by selective chemical vapor deposition |
JPH0766267A (en) | 1993-08-27 | 1995-03-10 | Kokusai Electric Co Ltd | Wafer cassette loading-unloading equipment |
US5397395A (en) | 1990-10-29 | 1995-03-14 | Canon Kabushiki Kaisha | Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same |
JPH0774162A (en) | 1993-08-31 | 1995-03-17 | Semiconductor Energy Lab Co Ltd | Apparatus and method for vapor phase reaction |
US5404082A (en) | 1993-04-23 | 1995-04-04 | North American Philips Corporation | High frequency inverter with power-line-controlled frequency modulation |
US5403630A (en) | 1992-10-27 | 1995-04-04 | Kabushiki Kaisha Toshiba | Vapor-phase growth method for forming S2 O2 films |
US5407449A (en) | 1992-03-10 | 1995-04-18 | Asm International N.V. | Device for treating micro-circuit wafers |
US5407867A (en) | 1988-05-12 | 1995-04-18 | Mitsubishki Denki Kabushiki Kaisha | Method of forming a thin film on surface of semiconductor substrate |
JPH07109576A (en) | 1993-10-07 | 1995-04-25 | Shinko Seiki Co Ltd | Formation of film by plasma cvd |
US5414221A (en) | 1991-12-31 | 1995-05-09 | Intel Corporation | Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias |
US5413813A (en) | 1993-11-23 | 1995-05-09 | Enichem S.P.A. | CVD of silicon-based ceramic materials on internal surface of a reactor |
US5415753A (en) | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5418382A (en) | 1993-09-23 | 1995-05-23 | Fsi International, Inc. | Substrate location and detection apparatus |
US5422139A (en) | 1990-04-12 | 1995-06-06 | Balzers Aktiengesellschaft | Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method |
US5421893A (en) | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
US5423942A (en) | 1994-06-20 | 1995-06-13 | Texas Instruments Incorporated | Method and apparatus for reducing etching erosion in a plasma containment tube |
US5426137A (en) | 1993-01-05 | 1995-06-20 | Halliburton Company | Method for continuously mixing fluids |
US5427824A (en) | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
US5430011A (en) | 1991-09-17 | 1995-07-04 | Sumitomi Electric Industries, Ltd. | Crystal compensated superconducting thin film formed of oxide superconductor material |
US5431734A (en) | 1994-04-28 | 1995-07-11 | International Business Machines Corporation | Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control |
JPH07209093A (en) | 1994-01-20 | 1995-08-11 | Tokyo Electron Ltd | Thermometer |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5443686A (en) | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
JPH07225214A (en) | 1994-02-14 | 1995-08-22 | Shimadzu Corp | Nox measuring apparatus |
US5443648A (en) | 1993-04-13 | 1995-08-22 | Tokyo Electron Kabushiki Kaisha | Vertical heat treatment apparatus with a rotary holder turning independently of a liner plate |
US5443646A (en) | 1991-06-04 | 1995-08-22 | Matsushita Research Institute Tokyo, Inc. | Method and apparatus for forming thin film and multilayer film |
US5447294A (en) | 1993-01-21 | 1995-09-05 | Tokyo Electron Limited | Vertical type heat treatment system |
US5453124A (en) | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5456207A (en) | 1994-05-16 | 1995-10-10 | The United States Of America As Represented By The Secretary Of The Navy | Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials |
US5456757A (en) | 1993-05-27 | 1995-10-10 | Applied Materials, Inc. | Susceptor for vapor deposition |
JPH07272694A (en) | 1994-03-30 | 1995-10-20 | Ushio Inc | Dielectric barrier discharge fluorescent lamp |
USD363464S (en) | 1992-08-27 | 1995-10-24 | Tokyo Electron Yamanashi Limited | Electrode for a semiconductor processing apparatus |
US5461214A (en) | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
EP0678909A1 (en) | 1994-04-20 | 1995-10-25 | STMicroelectronics S.r.l. | Monitoring of rf-plasma induced potential on a gate dielectric inside a plasma etcher |
JPH07283149A (en) | 1994-04-04 | 1995-10-27 | Nissin Electric Co Ltd | Thin film vapor growth device |
US5462899A (en) | 1992-11-30 | 1995-10-31 | Nec Corporation | Chemical vapor deposition method for forming SiO2 |
US5463176A (en) | 1994-01-03 | 1995-10-31 | Eckert; C. Edward | Liquid waste oxygenation |
US5464313A (en) | 1993-02-08 | 1995-11-07 | Tokyo Electron Kabushiki Kaisha | Heat treating apparatus |
JPH07297271A (en) | 1994-04-22 | 1995-11-10 | Shinko Electric Co Ltd | Support mechanism for supporting wafer cassettes with different sizes arbitrarily |
US5474410A (en) | 1993-03-14 | 1995-12-12 | Tel-Varian Limited | Multi-chamber system provided with carrier units |
US5474612A (en) | 1990-03-19 | 1995-12-12 | Kabushiki Kaisha Toshiba | Vapor-phase deposition apparatus and vapor-phase deposition method |
US5478429A (en) | 1993-01-20 | 1995-12-26 | Tokyo Electron Limited | Plasma process apparatus |
US5480488A (en) | 1992-10-28 | 1996-01-02 | Schott Glaswerke | Apparatus for supplying CVD coating devices |
US5480818A (en) | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5482559A (en) | 1993-10-21 | 1996-01-09 | Tokyo Electron Kabushiki Kaisha | Heat treatment boat |
US5484484A (en) | 1993-07-03 | 1996-01-16 | Tokyo Electron Kabushiki | Thermal processing method and apparatus therefor |
US5494439A (en) | 1993-09-29 | 1996-02-27 | Intel Corporation | Si/SiC composite material and method for making Si/SiC composite material |
US5494494A (en) | 1992-06-24 | 1996-02-27 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing substrates |
US5496408A (en) | 1992-11-20 | 1996-03-05 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for producing compound semiconductor devices |
US5501740A (en) | 1993-06-04 | 1996-03-26 | Applied Science And Technology, Inc. | Microwave plasma reactor |
US5503875A (en) | 1993-03-18 | 1996-04-02 | Tokyo Electron Limited | Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily |
US5504042A (en) | 1994-06-23 | 1996-04-02 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
US5510277A (en) | 1994-06-29 | 1996-04-23 | At&T Corp. | Surface treatment for silicon substrates |
US5512102A (en) | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US5514439A (en) | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
US5518780A (en) | 1994-06-16 | 1996-05-21 | Ford Motor Company | Method of making hard, transparent amorphous hydrogenated boron nitride films |
US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
US5520743A (en) | 1992-09-03 | 1996-05-28 | Tokyo Electron Kabushiki Kaisha | Processing apparatus with means for rotating an object mounting means and a disk body located in the mounting means differently relative to each other |
US5523616A (en) | 1993-10-29 | 1996-06-04 | Nec Corporation | Semiconductor device having laminated tight and coarse insulating layers |
WO1996017107A1 (en) | 1994-11-28 | 1996-06-06 | Mikrokemia Oy | Method and apparatus for growing thin films |
US5527111A (en) | 1992-12-24 | 1996-06-18 | Pruftechnik Dieter Busch Ag | Contact temperature sensor |
US5527417A (en) | 1992-07-06 | 1996-06-18 | Kabushiki Kaisha Toshiba | Photo-assisted CVD apparatus |
US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
US5531218A (en) | 1993-04-17 | 1996-07-02 | Messer Griesheim Gmbh | Apparatus for the monitored metering of no into patients' respiratory air |
JPH08181135A (en) | 1994-12-22 | 1996-07-12 | Sharp Corp | Manufacture of semiconductor device |
US5537311A (en) | 1993-01-28 | 1996-07-16 | Applied Materials, Inc. | Apparatus for aligning substrates for loading and unloading using a robot mechanism |
US5540821A (en) | 1993-07-16 | 1996-07-30 | Applied Materials, Inc. | Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing |
US5540898A (en) | 1995-05-26 | 1996-07-30 | Vasogen Inc. | Ozone generator with in-line ozone sensor |
US5540059A (en) | 1994-02-28 | 1996-07-30 | Shin-Etsu Quartz Products Co., Ltd. | Method and apparatus for supplying gaseous raw material |
US5554557A (en) | 1996-02-02 | 1996-09-10 | Vanguard International Semiconductor Corp. | Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell |
US5556275A (en) | 1993-09-30 | 1996-09-17 | Tokyo Electron Limited | Heat treatment apparatus |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5559046A (en) | 1992-10-28 | 1996-09-24 | Matsushita Electronics Corporation | Semiconductor device having a hollow around a gate electrode and a method for producing the same |
US5562383A (en) | 1993-04-13 | 1996-10-08 | Tokyo Electron Kabushiki Kaisha | Treatment apparatus |
US5562952A (en) | 1993-11-11 | 1996-10-08 | Nissin Electric Co., Ltd. | Plasma-CVD method and apparatus |
US5562947A (en) | 1994-11-09 | 1996-10-08 | Sony Corporation | Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment |
US5565038A (en) | 1991-05-16 | 1996-10-15 | Intel Corporation | Interhalogen cleaning of process equipment |
US5569402A (en) | 1992-06-03 | 1996-10-29 | Esec S.A. | Curing oven for magazine holding computer chip lead frames, providing flow direction control for hot gas stream |
US5574247A (en) | 1993-06-21 | 1996-11-12 | Hitachi, Ltd. | CVD reactor apparatus |
US5576629A (en) | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
US5577331A (en) | 1994-06-30 | 1996-11-26 | Nippon Precision Circuits Inc. | Downflow spin dryer |
US5583736A (en) | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
JPH08335558A (en) | 1995-06-08 | 1996-12-17 | Nissin Electric Co Ltd | Thin film vapor phase deposition apparatus |
US5584936A (en) | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
US5584963A (en) | 1993-05-18 | 1996-12-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device manufacturing apparatus and cleaning method for the apparatus |
US5586585A (en) | 1995-02-27 | 1996-12-24 | Asyst Technologies, Inc. | Direct loadlock interface |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5595606A (en) | 1995-04-20 | 1997-01-21 | Tokyo Electron Limited | Shower head and film forming apparatus using the same |
WO1997003223A1 (en) | 1995-07-10 | 1997-01-30 | Watkins Johnson Company | Gas distribution apparatus |
US5602060A (en) | 1993-08-31 | 1997-02-11 | Fujitsu Limited | Process for the production of semiconductor devices |
US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5604410A (en) | 1993-04-05 | 1997-02-18 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh | Method to operate an incoherently emitting radiation source having at least one dielectrically impeded electrode |
JPH0964149A (en) | 1995-08-29 | 1997-03-07 | Hitachi Electron Eng Co Ltd | Semiconductor production device |
US5611448A (en) | 1995-09-25 | 1997-03-18 | United Microelectronics Corporation | Wafer container |
US5616947A (en) | 1994-02-01 | 1997-04-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an MIS structure |
US5616264A (en) | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
JPH0989676A (en) | 1995-09-21 | 1997-04-04 | Casio Comput Co Ltd | Electronic clinical thermometer |
US5621982A (en) | 1992-07-29 | 1997-04-22 | Shinko Electric Co., Ltd. | Electronic substrate processing system using portable closed containers and its equipments |
US5632919A (en) | 1996-01-25 | 1997-05-27 | T.G.M., Inc. | Temperature controlled insulation system |
JPH09148322A (en) | 1995-11-22 | 1997-06-06 | Sharp Corp | Method for forming silicon oxide film and plasma cvd film forming apparatus |
US5637153A (en) | 1993-04-30 | 1997-06-10 | Tokyo Electron Limited | Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus |
USD380527S (en) | 1996-03-19 | 1997-07-01 | Cherle Velez | Sink drain shield |
US5645646A (en) | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5650013A (en) | 1984-11-26 | 1997-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Layer member forming method |
US5650351A (en) | 1996-01-11 | 1997-07-22 | Vanguard International Semiconductor Company | Method to form a capacitor having multiple pillars for advanced DRAMS |
US5653807A (en) | 1996-03-28 | 1997-08-05 | The United States Of America As Represented By The Secretary Of The Air Force | Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy |
US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
US5661263A (en) | 1995-05-10 | 1997-08-26 | Phaeton, Llc | Surface raceway and method |
US5662470A (en) | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
US5663899A (en) | 1995-06-05 | 1997-09-02 | Advanced Micro Devices | Redundant thermocouple |
US5667592A (en) | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5670786A (en) | 1995-07-18 | 1997-09-23 | Uvp, Inc. | Multiple wavelength light source |
US5679215A (en) | 1996-01-02 | 1997-10-21 | Lam Research Corporation | Method of in situ cleaning a vacuum plasma processing chamber |
US5681779A (en) | 1994-02-04 | 1997-10-28 | Lsi Logic Corporation | Method of doping metal layers for electromigration resistance |
US5683561A (en) | 1991-04-04 | 1997-11-04 | Conner Peripherals, Inc. | Apparatus and method for high throughput sputtering |
US5683517A (en) | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Plasma reactor with programmable reactant gas distribution |
US5685912A (en) | 1995-06-20 | 1997-11-11 | Sony Corporation | Pressure control system for semiconductor manufacturing equipment |
USD386076S (en) | 1996-05-14 | 1997-11-11 | Camco Manufacturing, Inc. | Awning clamp |
US5685914A (en) | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
US5690742A (en) | 1994-09-06 | 1997-11-25 | Komatsu Electronic Metals Co., Ltd. | Susceptor for an epitaxial growth apparatus |
US5695567A (en) | 1996-02-26 | 1997-12-09 | Abb Research Ltd. | Susceptor for a device for epitaxially growing objects and such a device |
US5698036A (en) | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
US5697706A (en) | 1995-12-26 | 1997-12-16 | Chrysler Corporation | Multi-point temperature probe |
US5700729A (en) | 1996-07-15 | 1997-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masked-gate MOS S/D implantation |
US5708825A (en) | 1995-05-26 | 1998-01-13 | Iconovex Corporation | Automatic summary page creation and hyperlink generation |
US5709745A (en) | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
US5711811A (en) | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
US5716133A (en) | 1995-01-17 | 1998-02-10 | Applied Komatsu Technology, Inc. | Shielded heat sensor for measuring temperature |
JPH1041096A (en) | 1996-07-19 | 1998-02-13 | Tokyo Electron Ltd | Plasma treatment device |
US5718574A (en) | 1995-03-01 | 1998-02-17 | Tokyo Electron Limited | Heat treatment apparatus |
JPH1050635A (en) | 1996-07-29 | 1998-02-20 | Kokusai Electric Co Ltd | Generation of metal thin film and cvd device |
JPH1050800A (en) | 1996-08-05 | 1998-02-20 | Canon Sales Co Inc | Processing system |
US5720927A (en) | 1994-04-29 | 1998-02-24 | Motorola, Inc. | Apparatus for decomposition of chemical compounds |
JPH1064696A (en) | 1996-08-23 | 1998-03-06 | Tokyo Electron Ltd | Plasma processing device |
US5724748A (en) | 1996-07-24 | 1998-03-10 | Brooks; Ray G. | Apparatus for packaging contaminant-sensitive articles and resulting package |
US5728425A (en) | 1992-03-18 | 1998-03-17 | Fujitsu Limited | Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films |
US5728223A (en) | 1995-06-09 | 1998-03-17 | Ebara Corporation | Reactant gas ejector head and thin-film vapor deposition apparatus |
US5730802A (en) | 1994-05-20 | 1998-03-24 | Sharp Kabushiki Kaisha | Vapor growth apparatus and vapor growth method capable of growing good productivity |
US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5732957A (en) | 1996-02-09 | 1998-03-31 | Yu; Chung-Hsiung | Roller skate with auxiliary roller for assisting turning and braking action thereof |
USD392855S (en) | 1995-06-26 | 1998-03-31 | Pillow Daryl R | Floor protection template for use while spray-painting door frames |
US5732597A (en) | 1996-03-19 | 1998-03-31 | Hughes Electronics | Pre-loaded self-aligning roller nut assembly for standard micrometer spindle and the like |
US5732744A (en) | 1996-03-08 | 1998-03-31 | Control Systems, Inc. | Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components |
US5736314A (en) | 1995-11-16 | 1998-04-07 | Microfab Technologies, Inc. | Inline thermo-cycler |
US5753835A (en) | 1996-12-12 | 1998-05-19 | Caterpillar Inc. | Receptacle for holding a sensing device |
US5754390A (en) | 1996-01-23 | 1998-05-19 | Micron Technology, Inc. | Integrated capacitor bottom electrode for use with conformal dielectric |
US5761328A (en) | 1995-05-22 | 1998-06-02 | Solberg Creations, Inc. | Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements |
US5759281A (en) | 1997-06-30 | 1998-06-02 | Emcore Corporation | CVD reactor for uniform heating with radiant heating filaments |
JPH10153494A (en) | 1996-11-25 | 1998-06-09 | Yamari Sangyo Kk | Thermocouple |
US5768125A (en) | 1995-12-08 | 1998-06-16 | Asm International N.V. | Apparatus for transferring a substantially circular article |
US5766365A (en) | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US5769952A (en) | 1994-06-07 | 1998-06-23 | Tokyo Electron, Ltd. | Reduced pressure and normal pressure treatment apparatus |
US5777838A (en) | 1995-12-19 | 1998-07-07 | Fujitsu Limited | Electrostatic chuck and method of attracting wafer |
US5775889A (en) | 1994-05-17 | 1998-07-07 | Tokyo Electron Limited | Heat treatment process for preventing slips in semiconductor wafers |
CN1186873A (en) | 1996-11-26 | 1998-07-08 | 西门子公司 | Distribution plate for reaction chamber with multiple gas inlets and separate mass flow control loops |
US5779203A (en) | 1996-06-28 | 1998-07-14 | Edlinger; Erich | Adjustable wafer cassette stand |
US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
KR19980026850A (en) | 1996-10-11 | 1998-07-15 | 김광호 | Rapid heat treatment equipment with the function of inspecting warpage of wafer |
US5782979A (en) | 1993-04-22 | 1998-07-21 | Mitsubishi Denki Kabushiki Kaisha | Substrate holder for MOCVD |
WO1998032893A2 (en) | 1997-01-23 | 1998-07-30 | Asm America, Inc. | Wafer support system |
US5790750A (en) | 1993-10-29 | 1998-08-04 | Applied Materials, Inc. | Profiled substrate heating utilizing a support temperature and a substrate temperature |
US5791782A (en) | 1995-09-21 | 1998-08-11 | Fusion Systems Corporation | Contact temperature probe with unrestrained orientation |
US5792272A (en) | 1995-07-10 | 1998-08-11 | Watkins-Johnson Company | Plasma enhanced chemical processing reactor and method |
US5796074A (en) | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
JPH10227703A (en) | 1997-02-13 | 1998-08-25 | Mitsubishi Heavy Ind Ltd | Heat flux meter |
US5801104A (en) | 1995-10-24 | 1998-09-01 | Micron Technology, Inc. | Uniform dielectric film deposition on textured surfaces |
US5801945A (en) | 1996-06-28 | 1998-09-01 | Lam Research Corporation | Scheduling method for robotic manufacturing processes |
US5804505A (en) | 1992-10-27 | 1998-09-08 | Nec Corporation | Method of producing semiconductor device having buried contact structure |
US5806980A (en) | 1996-09-11 | 1998-09-15 | Novellus Systems, Inc. | Methods and apparatus for measuring temperatures at high potential |
JPH10261620A (en) | 1997-03-19 | 1998-09-29 | Hitachi Ltd | Surface treater |
US5813851A (en) | 1995-09-07 | 1998-09-29 | Tokyo Electron, Ltd. | Heat treatment method |
US5818716A (en) | 1996-10-18 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Dynamic lot dispatching required turn rate factory control system and method of operation thereof |
US5819092A (en) | 1994-11-08 | 1998-10-06 | Vermeer Technologies, Inc. | Online service development tool with fee setting capabilities |
US5820366A (en) | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
US5819434A (en) | 1996-04-25 | 1998-10-13 | Applied Materials, Inc. | Etch enhancement using an improved gas distribution plate |
US5820685A (en) | 1996-01-17 | 1998-10-13 | Applied Materials, Inc. | Wafer support device |
US5820686A (en) | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5826129A (en) | 1994-06-30 | 1998-10-20 | Tokyo Electron Limited | Substrate processing system |
US5827420A (en) | 1997-07-29 | 1998-10-27 | World Precision Instruments, Inc. | Method and apparatus for the generation of nitric oxide |
US5827757A (en) | 1996-07-16 | 1998-10-27 | Direct Radiography Corp. | Fabrication of large area x-ray image capturing element |
US5827435A (en) | 1994-10-27 | 1998-10-27 | Nec Corporation | Plasma processing method and equipment used therefor |
US5837058A (en) | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
US5836483A (en) | 1997-02-05 | 1998-11-17 | Aerotech Dental Systems, Inc. | Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles |
US5837320A (en) | 1996-02-27 | 1998-11-17 | The University Of New Mexico | Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands |
US5844683A (en) | 1996-05-22 | 1998-12-01 | Applied Materials, Inc. | Position sensor system for substrate holders |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5851293A (en) | 1996-03-29 | 1998-12-22 | Atmi Ecosys Corporation | Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations |
US5851299A (en) | 1990-12-05 | 1998-12-22 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5851294A (en) | 1995-10-23 | 1998-12-22 | Watkins-Johnson Company | Gas injection system for semiconductor processing |
US5852445A (en) | 1993-03-18 | 1998-12-22 | Fujitsu Limited | Method of verifying integrated circuit operation by comparing stored data structures corresponding to integrated circuit logic cells |
US5853484A (en) | 1995-10-28 | 1998-12-29 | Lg Semicon Co., Ltd. | Gas distribution system and method for chemical vapor deposition apparatus |
US5852879A (en) | 1995-04-26 | 1998-12-29 | Schumaier; Daniel R. | Moisture sensitive item drying appliance |
EP0887632A1 (en) | 1997-06-24 | 1998-12-30 | Isuzu Ceramics Research Institute Co., Ltd. | A ceramic thermocouple for measuring temperature of molten metal |
US5855680A (en) | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
US5855687A (en) | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
US5855726A (en) | 1995-07-19 | 1999-01-05 | Hitachi, Ltd. | Vacuum processing apparatus and semiconductor manufacturing line using the same |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
USD403949S (en) | 1996-10-03 | 1999-01-12 | Shinagawa Shoko Co., Ltd. | Insulating bushing |
US5857777A (en) | 1996-09-25 | 1999-01-12 | Claud S. Gordon Company | Smart temperature sensing device |
USD404370S (en) | 1997-08-20 | 1999-01-19 | Tokyo Electron Limited | Cap for use in a semiconductor wafer heat processing apparatus |
US5862302A (en) | 1994-09-28 | 1999-01-19 | Tokyo Electron Limited | Thermal processing apparatus having a reaction tube with transparent and opaque portions |
US5861233A (en) | 1992-07-31 | 1999-01-19 | Canon Kabushiki Kaisha | Pattern forming method by imparting hydrogen atoms and selectively depositing metal film |
USD404372S (en) | 1997-08-20 | 1999-01-19 | Tokyo Electron Limited | Ring for use in a semiconductor wafer heat processing apparatus |
US5863123A (en) | 1996-04-24 | 1999-01-26 | Samsung Electronics Co., Ltd. | Profile thermocouple of a transverse-type diffusion furnace |
US5866795A (en) | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
US5871586A (en) | 1994-06-14 | 1999-02-16 | T. Swan & Co. Limited | Chemical vapor deposition |
US5872065A (en) | 1997-04-02 | 1999-02-16 | Applied Materials Inc. | Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry |
US5873942A (en) | 1996-08-08 | 1999-02-23 | Samsung Electronics Co., Ltd. | Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps |
US5877095A (en) | 1994-09-30 | 1999-03-02 | Nippondenso Co., Ltd. | Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen |
US5880980A (en) | 1996-09-30 | 1999-03-09 | Rockwell International Corporation | Distributed decimation sample rate conversion |
US5879459A (en) | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US5879128A (en) | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
US5882165A (en) | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US5884640A (en) | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
US5888304A (en) | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
US5891251A (en) | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
JPH1197163A (en) | 1997-09-24 | 1999-04-09 | Mitsubishi Heavy Ind Ltd | Device for maintaining gap for positioning high frequency heating coil |
US5893741A (en) | 1997-02-07 | 1999-04-13 | National Science Council | Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's |
US5897348A (en) | 1998-03-13 | 1999-04-27 | Texas Instruments - Acer Incorporated | Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance |
US5897378A (en) | 1995-05-17 | 1999-04-27 | Matsushita Electric Industrial Co., Ltd. | Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor manufacturing apparatus |
US5897710A (en) | 1992-03-27 | 1999-04-27 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
US5897379A (en) | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
JPH11118615A (en) | 1997-10-09 | 1999-04-30 | Kakunenryo Cycle Kaihatsu Kiko | Temperature sensor for object to be measured having stretchability |
WO1999023690A1 (en) | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Method of processing wafers with low mass support |
USD409894S (en) | 1997-12-30 | 1999-05-18 | Mcclurg Ben B | Sheet rock plug |
US5904170A (en) | 1997-05-14 | 1999-05-18 | Applied Materials, Inc. | Pressure flow and concentration control of oxygen/ozone gas mixtures |
US5908672A (en) | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
US5915200A (en) | 1996-10-30 | 1999-06-22 | Canon Sales Co., Inc. | Film forming method and semiconductor device manufacturing method |
US5915562A (en) | 1996-07-12 | 1999-06-29 | Fluoroware, Inc. | Transport module with latching door |
USD411516S (en) | 1996-03-15 | 1999-06-29 | Tokyo Electron Limited | Gas diffusion plate for electrode of semiconductor wafer processing apparatus |
US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US5920798A (en) | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
JPH11183264A (en) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | Temperature measuring instrument with thermocouple |
JPH11183265A (en) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | Temperature measuring instrument with thermocouple |
JPH11195688A (en) | 1997-12-26 | 1999-07-21 | Mc Electronics Kk | Substrate treatment device |
US5928426A (en) | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
USD412270S (en) | 1998-08-10 | 1999-07-27 | David Frank Fredrickson | Article lifter |
USD412512S (en) | 1998-06-24 | 1999-08-03 | Marc H Boisvert | Tool holding device |
US5937142A (en) | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US5947718A (en) | 1997-03-07 | 1999-09-07 | Semitool, Inc. | Semiconductor processing furnace |
US5950925A (en) | 1996-10-11 | 1999-09-14 | Ebara Corporation | Reactant gas ejector head |
US5950327A (en) | 1996-07-08 | 1999-09-14 | Speedfam-Ipec Corporation | Methods and apparatus for cleaning and drying wafers |
US5954375A (en) | 1995-12-21 | 1999-09-21 | Edstrom Industries, Inc. | Sanitary fitting having ferrule with grooved undercut |
US5961775A (en) | 1987-08-19 | 1999-10-05 | Fujitsu Limited | Apparatus for removing organic resist from semiconductor |
US5968275A (en) | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
JPH11287715A (en) | 1998-04-02 | 1999-10-19 | Canon Inc | Thermocouple |
US5972196A (en) | 1995-06-07 | 1999-10-26 | Lynntech, Inc. | Electrochemical production of ozone and hydrogen peroxide |
US5970621A (en) | 1998-01-16 | 1999-10-26 | Pri Automation, Inc. | Semiconductor wafer cassette positioning and detection mechanism |
US5976973A (en) | 1996-11-25 | 1999-11-02 | Fujitsu Ltd. | Method of making a semiconductor device having planarized insulating layer |
US5975492A (en) | 1997-07-14 | 1999-11-02 | Brenes; Arthur | Bellows driver slot valve |
US5982931A (en) | 1995-06-07 | 1999-11-09 | Ishimaru; Mikio | Apparatus and method for the manipulation of image containing documents |
US5979506A (en) | 1995-08-16 | 1999-11-09 | Aker Engineering As | Arrangement in a pipe bundle |
US5987480A (en) | 1996-07-25 | 1999-11-16 | Donohue; Michael | Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content |
US5984391A (en) | 1997-02-03 | 1999-11-16 | Novellus Systems, Inc. | Microfeature wafer handling apparatus and methods |
US5989342A (en) | 1996-01-30 | 1999-11-23 | Dainippon Screen Mfg, Co., Ltd. | Apparatus for substrate holding |
US5992453A (en) | 1995-10-17 | 1999-11-30 | Zimmer; Johannes | Flow-dividing arrangement |
US5997588A (en) | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5998870A (en) | 1994-06-10 | 1999-12-07 | Samsung Electronics Co., Ltd. | Wiring structure of semiconductor device and method for manufacturing the same |
US5997768A (en) | 1993-06-29 | 1999-12-07 | Ciba Specialty Chemicals Corporation | Pelletization of metal soap powders |
US6001183A (en) | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
US6000732A (en) | 1995-09-22 | 1999-12-14 | Jenoptik Ag | Arrangement for locking and unlocking a door of a container |
US6004204A (en) | 1995-03-10 | 1999-12-21 | Luminis Pty Ltd. | Induction nozzle and arrangement |
US6013553A (en) | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
US6013920A (en) | 1997-11-28 | 2000-01-11 | Fortrend Engineering Coirporation | Wafer-mapping load post interface having an effector position sensing device |
US6014677A (en) | 1995-06-12 | 2000-01-11 | Fuji Xerox Co., Ltd. | Document management device and method for managing documents by utilizing additive information |
KR20000000946A (en) | 1998-06-05 | 2000-01-15 | 주재현 | Vaporizer and chemical vapor deposition apparatus using the same |
US6015459A (en) | 1998-06-26 | 2000-01-18 | Extreme Devices, Inc. | Method for doping semiconductor materials |
US6015465A (en) | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
US6017779A (en) | 1994-06-15 | 2000-01-25 | Seiko Epson Corporation | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
US6017818A (en) | 1996-01-22 | 2000-01-25 | Texas Instruments Incorporated | Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density |
USD419652S (en) | 1997-09-23 | 2000-01-25 | Imbibitive Technologies Corp. | Stand-pipe assembly unit for a containment basin which holds a sorbent material containing cartridge and which can hold a silt-collecting sock over its top tray |
US6022802A (en) | 1999-03-18 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company | Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines |
US6022180A (en) | 1997-07-02 | 2000-02-08 | Fujitsu Limited | Cartridge transferring robot for library apparatus |
US6025117A (en) | 1996-12-09 | 2000-02-15 | Kabushiki Kaisha Toshiba | Method of forming a pattern using polysilane |
US6024799A (en) | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
US6027163A (en) | 1997-09-10 | 2000-02-22 | Graco Children's Products Inc. | Juvenile carrier with moveable canopy |
US6029602A (en) | 1997-04-22 | 2000-02-29 | Applied Materials, Inc. | Apparatus and method for efficient and compact remote microwave plasma generation |
US6030900A (en) | 1995-08-04 | 2000-02-29 | Siemens Aktiengesellschaft | Process for generating a space in a structure |
JP2000068355A (en) | 1998-08-21 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6033215A (en) | 1993-01-27 | 2000-03-07 | Tokyo Electron Limited | Heat treatment apparatus and heat treatment boat |
US6035804A (en) | 1997-11-07 | 2000-03-14 | Tokyo Electron Limited | Process chamber apparatus |
US6039809A (en) | 1998-01-27 | 2000-03-21 | Mitsubishi Materials Silicon Corporation | Method and apparatus for feeding a gas for epitaxial growth |
US6042652A (en) | 1999-05-01 | 2000-03-28 | P.K. Ltd | Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
US6044860A (en) | 1999-02-01 | 2000-04-04 | Spx Corporation | Adjustable lockout device for knife gate valves |
US6045260A (en) | 1994-09-27 | 2000-04-04 | Rosemount Inc. | Switch for selectively coupling a sensor or calibration element to a terminal block |
US6048154A (en) | 1996-10-02 | 2000-04-11 | Applied Materials, Inc. | High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock |
KR100253664B1 (en) | 1997-08-22 | 2000-04-15 | 이해광 | Operating system of polyimide dryer |
US6050506A (en) | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
US6054678A (en) | 1997-03-14 | 2000-04-25 | Hakko Corporation | Heater-sensor complex |
US6053982A (en) | 1995-09-01 | 2000-04-25 | Asm America, Inc. | Wafer support system |
US6053983A (en) | 1997-05-08 | 2000-04-25 | Tokyo Electron, Ltd. | Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
US6060721A (en) | 1998-05-06 | 2000-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus for detecting correct positioning of a wafer cassette |
US6060691A (en) | 1997-04-21 | 2000-05-09 | Fujikin Incorporated | Device for heating fluid controller |
US6063196A (en) | 1998-10-30 | 2000-05-16 | Applied Materials, Inc. | Semiconductor processing chamber calibration tool |
US6066204A (en) | 1997-01-08 | 2000-05-23 | Bandwidth Semiconductor, Llc | High pressure MOCVD reactor system |
US6068441A (en) | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
KR20000031098A (en) | 1998-11-03 | 2000-06-05 | 윤종용 | Spike thermocouple element for detecting temperature of heating furnace |
US6071572A (en) | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US6072163A (en) | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
US6074514A (en) | 1998-02-09 | 2000-06-13 | Applied Materials, Inc. | High selectivity etch using an external plasma discharge |
US6074154A (en) | 1996-08-29 | 2000-06-13 | Tokyo Electron Limited | Substrate treatment system, substrate transfer system, and substrate transfer method |
US6073973A (en) | 1996-10-31 | 2000-06-13 | Stanley Aviation Corporation | Lightweight positive lock coupling |
US6074443A (en) | 1996-10-21 | 2000-06-13 | Applied Materials, Inc. | Method and apparatus for scheduling wafer processing within a multiple chamber semiconductor wafer processing tool having a multiple blade robot |
US6077027A (en) | 1996-02-09 | 2000-06-20 | Hitachi, Ltd. | Semiconductor manufacturing apparatus for transferring articles with a bearing-less joint and method for manufacturing semiconductor device |
US6079927A (en) | 1998-04-22 | 2000-06-27 | Varian Semiconductor Equipment Associates, Inc. | Automated wafer buffer for use with wafer processing equipment |
US6079356A (en) | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
JP2000182949A (en) | 1998-12-17 | 2000-06-30 | Tokyo Electron Ltd | Processing device and clean air supply method therefor |
US6083321A (en) | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR20000045257A (en) | 1998-12-30 | 2000-07-15 | 서평원 | Method for searching cell in mobile communication system |
US6091062A (en) | 1998-01-27 | 2000-07-18 | Kinetrix, Inc. | Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly |
US6090212A (en) | 1997-08-15 | 2000-07-18 | Micro C Technologies, Inc. | Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate |
US6090442A (en) | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
US6090659A (en) | 1995-04-28 | 2000-07-18 | International Business Machines Corporation | Lead silicate based capacitor structures |
US6093253A (en) | 1998-04-06 | 2000-07-25 | Abb Research Ltd. | Method and a device for epitaxial growth of objects by chemical vapor deposition |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US6093611A (en) | 1997-12-19 | 2000-07-25 | Advanced Micro Devices, Inc. | Oxide liner for high reliability with reduced encroachment of the source/drain region |
US6095083A (en) | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
US6096133A (en) | 1994-12-28 | 2000-08-01 | Mitsubishi Denki Kabushiki Kaisha | Chemical vapor deposition apparatus |
US6096267A (en) | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
US6099302A (en) | 1998-06-23 | 2000-08-08 | Samsung Electronics Co., Ltd. | Semiconductor wafer boat with reduced wafer contact area |
US6099651A (en) | 1997-09-11 | 2000-08-08 | Applied Materials, Inc. | Temperature controlled chamber liner |
US6099649A (en) | 1997-12-23 | 2000-08-08 | Applied Materials, Inc. | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
US6104401A (en) | 1997-06-12 | 2000-08-15 | Netscape Communications Corporation | Link filters |
US6102565A (en) | 1996-07-12 | 2000-08-15 | Isuzu Ceramics Research Institute Co., Ltd. | Ceramic sheath type thermocouple |
US6104011A (en) | 1997-09-04 | 2000-08-15 | Watlow Electric Manufacturing Company | Sheathed thermocouple with internal coiled wires |
US6104002A (en) | 1995-05-12 | 2000-08-15 | Tokyo Electron Limited | Heat treating apparatus |
US6106625A (en) | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
US6106678A (en) | 1996-03-29 | 2000-08-22 | Lam Research Corporation | Method of high density plasma CVD gap-filling |
US6110531A (en) | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
US6113703A (en) | 1998-11-25 | 2000-09-05 | Applied Materials, Inc. | Method and apparatus for processing the upper and lower faces of a wafer |
US6122036A (en) | 1993-10-21 | 2000-09-19 | Nikon Corporation | Projection exposure apparatus and method |
US6121158A (en) | 1997-08-13 | 2000-09-19 | Sony Corporation | Method for hardening a photoresist material formed on a substrate |
US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
US6124600A (en) | 1997-05-27 | 2000-09-26 | Ushiodenki Kabushiki Kaisha | Ultraviolet irradiation device of the optical path division type |
JP2000269163A (en) | 1999-03-18 | 2000-09-29 | Sony Corp | Formation method for metal film and wiring |
US6126744A (en) | 1996-11-18 | 2000-10-03 | Asm America, Inc. | Method and system for adjusting semiconductor processing equipment |
US6126848A (en) | 1998-05-06 | 2000-10-03 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction and chemiluminescence |
US6127249A (en) | 1997-02-20 | 2000-10-03 | Micron Technology, Inc. | Metal silicidation methods and methods for using same |
US6125789A (en) | 1998-01-30 | 2000-10-03 | Applied Materials, Inc. | Increasing the sensitivity of an in-situ particle monitor |
US6129044A (en) | 1996-07-12 | 2000-10-10 | Applied Materials, Inc. | Apparatus for substrate processing with improved throughput and yield |
US6129546A (en) | 1998-06-25 | 2000-10-10 | Tokyo Electron Limited | Heat process apparatus and heat process method |
US6132207A (en) | 1997-04-11 | 2000-10-17 | Asm International N.V. | Discharge system for a reactor, and process system provided with a discharge system of this kind |
US6134807A (en) | 1997-05-16 | 2000-10-24 | Tokyo Electron Limited | Drying processing method and apparatus using same |
US6137240A (en) | 1998-12-31 | 2000-10-24 | Lumion Corporation | Universal ballast control circuit |
US6135460A (en) | 1997-07-31 | 2000-10-24 | Texas Instruments Incorporated | Method of and apparatus for purifying reduced pressure process chambers |
US6139239A (en) | 1997-03-25 | 2000-10-31 | Asm International N.V. | System for transferring wafers from cassettes to furnaces and method |
US6139983A (en) | 1997-07-15 | 2000-10-31 | Ngk Insulators, Ltd. | Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same |
US6143129A (en) | 1994-11-15 | 2000-11-07 | Mattson Technology, Inc. | Inductive plasma reactor |
US6143079A (en) | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
US6143082A (en) | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
US6146463A (en) | 1998-06-12 | 2000-11-14 | Applied Materials, Inc. | Apparatus and method for aligning a substrate on a support member |
US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
US6151446A (en) | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
US6152669A (en) | 1995-11-13 | 2000-11-28 | Shinko Electric Co., Ltd. | Mechanical interface apparatus |
US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
US6156151A (en) | 1996-07-19 | 2000-12-05 | Tokyo Electron Limited | Plasma processing apparatus |
US6160244A (en) | 1998-05-29 | 2000-12-12 | Ngk Insulators, Ltd. | Susceptors |
US6159301A (en) | 1997-12-17 | 2000-12-12 | Asm Japan K.K. | Substrate holding apparatus for processing semiconductor |
US6158941A (en) | 1995-10-27 | 2000-12-12 | Brooks Automation, Inc. | Substrate transport apparatus with double substrate holders |
KR100273261B1 (en) | 1997-12-26 | 2000-12-15 | 김영환 | Gas mixing apparatus of depositor |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6162323A (en) | 1997-08-12 | 2000-12-19 | Tokyo Electron Yamanashi Limited | Plasma processing apparatus |
EP1061567A1 (en) | 1999-06-17 | 2000-12-20 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for manufacturing an improved phosphosilicate glass film |
US6164894A (en) | 1997-11-04 | 2000-12-26 | Cheng; David | Method and apparatus for integrated wafer handling and testing |
US6174809B1 (en) | 1997-12-31 | 2001-01-16 | Samsung Electronics, Co., Ltd. | Method for forming metal layer using atomic layer deposition |
JP2001015698A (en) | 1999-07-02 | 2001-01-19 | Matsushita Electronics Industry Corp | Semiconductor device and manufacture thereof |
US6176929B1 (en) | 1997-07-22 | 2001-01-23 | Ebara Corporation | Thin-film deposition apparatus |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
JP2001023872A (en) | 1999-07-09 | 2001-01-26 | Hitachi Ltd | Semiconductor substrate processing apparatus |
US6179955B1 (en) | 1998-08-03 | 2001-01-30 | Samsung Electronics Co., Ltd. | Dry etching apparatus for manufacturing semiconductor devices |
US6180979B1 (en) | 1996-03-12 | 2001-01-30 | Siemens Aktiengesellschaft | Memory cell arrangement with vertical MOS transistors and the production process thereof |
US6183564B1 (en) | 1998-11-12 | 2001-02-06 | Tokyo Electron Limited | Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system |
US6183565B1 (en) | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6187691B1 (en) | 1999-05-14 | 2001-02-13 | Asm Japan K.K. | Method of forming film on semiconductor substrate in film-forming apparatus |
US6187672B1 (en) | 1998-09-22 | 2001-02-13 | Conexant Systems, Inc. | Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing |
US6190634B1 (en) | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials |
US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
US6190037B1 (en) | 1999-02-19 | 2001-02-20 | Applied Materials, Inc. | Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system |
US6190113B1 (en) | 1997-04-30 | 2001-02-20 | Applied Materials, Inc. | Quartz pin lift for single wafer chemical vapor deposition/etch process chamber |
US6191399B1 (en) | 2000-02-01 | 2001-02-20 | Asm America, Inc. | System of controlling the temperature of a processing chamber |
US6194037B1 (en) | 1995-12-28 | 2001-02-27 | Kokusai Electric Co., Ltd. | Method of plasma processing a substrate placed on a substrate table |
JP3140111B2 (en) | 1991-11-19 | 2001-03-05 | オリンパス光学工業株式会社 | High magnification microscope objective |
US6200897B1 (en) | 1999-06-06 | 2001-03-13 | United Semiconductor Corp. | Method for manufacturing even dielectric layer |
US6201999B1 (en) | 1997-06-09 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool |
US6203613B1 (en) | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
US6203618B1 (en) | 1998-03-31 | 2001-03-20 | Canon Kabushiki Kaisha | Exhaust system and vacuum processing apparatus |
US6207936B1 (en) | 1996-01-31 | 2001-03-27 | Asm America, Inc. | Model-based predictive control of thermal processing |
US6207932B1 (en) | 1997-12-30 | 2001-03-27 | Hyundai Electronics Industries, Co., Ltd. | Heater block for heating wafer |
US6210485B1 (en) | 1998-07-21 | 2001-04-03 | Applied Materials, Inc. | Chemical vapor deposition vaporizer |
US6209221B1 (en) | 1998-05-14 | 2001-04-03 | Asm International N.V. | Wafer rack provided with a gas distribution device |
US20010000141A1 (en) | 1999-09-03 | 2001-04-05 | Derong Zhou | Processes and systems for purification of boron trichloride |
US6214717B1 (en) | 1998-11-16 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method for adding plasma treatment on bond pad to prevent bond pad staining problems |
US6214122B1 (en) | 1997-03-17 | 2001-04-10 | Motorola, Inc. | Rapid thermal processing susceptor |
US6213708B1 (en) | 1997-03-12 | 2001-04-10 | Advanced Micro Devices, Inc. | System for sorting multiple semiconductor wafers |
US6212789B1 (en) | 1998-06-19 | 2001-04-10 | Canon Sales Co., Inc. | Semiconductor device manufacturing system |
US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6217662B1 (en) | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
US6225602B1 (en) | 1997-05-02 | 2001-05-01 | Advanced Semiconductor Materials International N.V. | Vertical furnace for the treatment of semiconductor substrates |
US6225745B1 (en) | 1999-12-17 | 2001-05-01 | Axcelis Technologies, Inc. | Dual plasma source for plasma process chamber |
US6224679B1 (en) | 1997-08-12 | 2001-05-01 | Tokyo Electron Limited | Controlling gas in a multichamber processing system |
US6225020B1 (en) | 1998-04-30 | 2001-05-01 | Hyundai Electronics Industries Co., Ltd. | Polymer and a forming method of a micro pattern using the same |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6231290B1 (en) | 1998-03-23 | 2001-05-15 | Tokyo Electron | Processing method and processing unit for substrate |
US6235121B1 (en) | 1999-01-26 | 2001-05-22 | Tokyo Electron Limited | Vertical thermal treatment apparatus |
US6235858B1 (en) | 1992-10-30 | 2001-05-22 | Ppg Industries Ohio, Inc. | Aminoplast curable film-forming compositions providing films having resistance to acid etching |
US6238734B1 (en) | 1999-07-08 | 2001-05-29 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
US6239402B1 (en) | 1998-07-24 | 2001-05-29 | Ngk Insulators, Ltd. | Aluminum nitride-based sintered bodies, corrosion-resistant members, metal-buried articles and semiconductor-holding apparatuses |
US6239715B1 (en) | 1999-07-21 | 2001-05-29 | Karen L. Belton | Beeper system |
US20010001953A1 (en) | 1997-07-10 | 2001-05-31 | Stewart K. Griffiths | Support apparatus for semiconductor wafer processing |
US6241822B1 (en) | 1999-01-19 | 2001-06-05 | Nec Corporation | Vertical heat treatment apparatus |
US6240875B1 (en) | 1999-07-07 | 2001-06-05 | Asm International N.V. | Vertical oven with a boat for the uniform treatment of wafers |
US6243654B1 (en) | 1997-10-07 | 2001-06-05 | Telemonitor, Inc. | Transducer assembly with smart connector |
US6242359B1 (en) | 1997-08-20 | 2001-06-05 | Air Liquide America Corporation | Plasma cleaning and etching methods using non-global-warming compounds |
US20010003015A1 (en) | 1997-12-02 | 2001-06-07 | Mei Chang | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
US20010002581A1 (en) | 1998-09-03 | 2001-06-07 | Kazuyasu Nishikawa | System for manufacturing a semiconductor device |
US20010003191A1 (en) | 1999-12-03 | 2001-06-07 | Kovacs Ern?Ouml; | Communication device and software for operating multimedia applications |
US6245665B1 (en) | 1998-12-09 | 2001-06-12 | Nec Corporation | Semiconductor device and method of fabricating the same |
US6245647B1 (en) | 1998-02-23 | 2001-06-12 | Shin-Etsu Handotai Co., Ltd. | Method for fabrication of thin film |
US20010003271A1 (en) | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US6247245B1 (en) | 1998-11-18 | 2001-06-19 | Tokyo Electron Limited | Processing unit for substrate manufacture |
US6250250B1 (en) | 1999-03-18 | 2001-06-26 | Yuri Maishev | Multiple-cell source of uniform plasma |
US20010004880A1 (en) | 1999-07-07 | 2001-06-28 | The Co-Inventors To Applied Materials, Inc. | Pedestal with a thermally controlled platen |
US6255221B1 (en) | 1998-12-17 | 2001-07-03 | Lam Research Corporation | Methods for running a high density plasma etcher to achieve reduced transistor device damage |
US6257758B1 (en) | 1998-10-09 | 2001-07-10 | Claud S. Gordon Company | Surface temperature sensor |
US20010007645A1 (en) | 1999-05-28 | 2001-07-12 | Tokyo Electron Limited | Ozone processing apparatus for semiconductor processing system |
US20010007246A1 (en) | 1999-12-28 | 2001-07-12 | Masashi Ueda | Thin-film deposition apparatus |
US20010007244A1 (en) | 2000-01-06 | 2001-07-12 | Kimihiro Matsuse | Film forming apparatus and film forming method |
US6261648B1 (en) | 1994-02-15 | 2001-07-17 | Japan Atomic Energy Research Institute | Plasma facing components of nuclear fusion reactors employing tungsten materials |
US6265311B1 (en) | 1999-04-27 | 2001-07-24 | Tokyo Electron Limited | PECVD of TaN films from tantalum halide precursors |
US6265113B1 (en) | 1998-01-21 | 2001-07-24 | Mitsubishi Denki Kabushiki Kaisha | Stress adjustment method of X-ray mask |
US6264467B1 (en) | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
JP2001207268A (en) | 2000-01-27 | 2001-07-31 | Kubota Corp | Film deposition system |
JP2001207265A (en) | 2000-01-27 | 2001-07-31 | Kubota Corp | Film deposition system |
JP2001210602A (en) | 2000-01-27 | 2001-08-03 | Hitachi Kokusai Electric Inc | Substrate-processing apparatus |
US6270572B1 (en) | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
US6271320B1 (en) | 1996-11-25 | 2001-08-07 | Basf Aktiengesellschaft | Method for the production of a polymer dispersion by radical aqueous emulsion polymerization with a continuously produced aqueous monomer emulsion |
US6271148B1 (en) | 1997-04-23 | 2001-08-07 | Applied Materials, Inc. | Method for improved remote microwave plasma source for use with substrate processing system |
JP2001220677A (en) | 2000-02-03 | 2001-08-14 | Denso Corp | Method and apparatus for manufacturing thin film |
US6274496B1 (en) | 1999-04-20 | 2001-08-14 | Tokyo Electron Limited | Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing |
US6274878B1 (en) | 1997-07-23 | 2001-08-14 | Applied Materials, Inc. | Wafer out-of-pocket detection method |
US20010014267A1 (en) | 1997-05-21 | 2001-08-16 | Kenichi Yamaga | Wafer processing apparatus, method of operating the same and wafer detecting system |
US20010014514A1 (en) | 1998-11-10 | 2001-08-16 | Joseph E Geusic | Low temperature silicon wafer bond process with bulk material bond strength |
US20010016273A1 (en) | 1998-05-08 | 2001-08-23 | Krishnan Narasimhan | Multilayer cvd coated article and process for producing same |
US20010015343A1 (en) | 1998-07-29 | 2001-08-23 | Hessel Sprey | Method and installation for etching a substrate |
US6281098B1 (en) | 1999-06-15 | 2001-08-28 | Midwest Research Institute | Process for Polycrystalline film silicon growth |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
US20010018267A1 (en) | 1998-07-03 | 2001-08-30 | Hiroshi Shinriki | Single-substrate-heat-processing apparatus and method for performing reformation and crystallization |
US20010017103A1 (en) | 1997-12-15 | 2001-08-30 | Tokyo Electron Limited | Method of coating film, coating unit, aging unit, solvent replacement unit, and apparatus for coating film |
US6283692B1 (en) | 1998-12-01 | 2001-09-04 | Applied Materials, Inc. | Apparatus for storing and moving a cassette |
US6284050B1 (en) | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
US6284149B1 (en) | 1998-09-18 | 2001-09-04 | Applied Materials, Inc. | High-density plasma etching of carbon-based low-k materials in a integrated circuit |
US20010019900A1 (en) | 2000-02-28 | 2001-09-06 | Hiroyuki Hasegawa | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US20010019347A1 (en) | 1999-01-28 | 2001-09-06 | Mark Hauck | Method for regulating pressure |
US20010019777A1 (en) | 2000-02-04 | 2001-09-06 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Chamber material made of Al alloy and heater block |
US6287988B1 (en) | 1997-03-18 | 2001-09-11 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
US20010020715A1 (en) | 2000-03-02 | 2001-09-13 | Tokyo Electron Limited | Semiconductor device and manufacturing method therefor |
US20010021591A1 (en) | 1998-09-03 | 2001-09-13 | Anand Srinivasan | Methods of forming insulating materials |
US20010022215A1 (en) | 1996-02-16 | 2001-09-20 | Donohoe Kevin G. | Apparatus and method for improving uniformity in batch processing of semiconductor wafers |
JP2001257199A (en) | 2000-03-13 | 2001-09-21 | Matsushita Electric Ind Co Ltd | Plasma processing method and device thereof |
US6293700B1 (en) | 1999-09-24 | 2001-09-25 | Fluke Corporation | Calibrated isothermal assembly for a thermocouple thermometer |
US20010024387A1 (en) | 1999-12-03 | 2001-09-27 | Ivo Raaijmakers | Conformal thin films over textured capacitor electrodes |
US6296710B1 (en) | 1999-10-06 | 2001-10-02 | Advanced Micro Devices, Inc. | Multi-port gas injector for a vertical furnace used in semiconductor processing |
US6296909B1 (en) | 1998-12-22 | 2001-10-02 | General Electric Company | Method for thermally spraying crack-free mullite coatings on ceramic-based substrates |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US6297539B1 (en) | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
US20010027026A1 (en) | 1999-06-30 | 2001-10-04 | Rajinder Dhindsa | Gas distribution apparatus for semiconductor processing |
US6299133B2 (en) | 1999-12-21 | 2001-10-09 | Smc Kabushiki Kaisha | Gate valve |
US20010028924A1 (en) | 1996-08-16 | 2001-10-11 | Arthur Sherman | Sequential chemical vapor deposition |
US20010027585A1 (en) | 2000-04-06 | 2001-10-11 | Lg Electronics Inc. | Air circulation type vacuum cleaner |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
JP2001287180A (en) | 2000-04-04 | 2001-10-16 | Sony Corp | Robot remote-control system and software distribution method |
US20010031535A1 (en) | 1999-10-26 | 2001-10-18 | Agnello Paul D. | Semiconductor chip having both compact memory and high performance logic |
US20010031541A1 (en) | 1998-08-28 | 2001-10-18 | Arun Madan | Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
KR100295043B1 (en) | 1997-12-03 | 2001-10-19 | 윤종용 | Method for forming a metal film of a semiconductor device using an insulating film having a low dielectric constant as an interdielectric layer |
US6305898B1 (en) | 1998-07-22 | 2001-10-23 | Asm Japan K.K. | Wafer transfer mechanism |
US20010034097A1 (en) | 1997-09-29 | 2001-10-25 | Hyun-Seok Lim | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
US6311016B1 (en) | 1997-02-27 | 2001-10-30 | Sony Corporation | Substrate temperature measuring apparatus, substrate temperature measuring method, substrate heating method and heat treatment apparatus |
USD449873S1 (en) | 2000-09-22 | 2001-10-30 | James Bronson | Garbage disposal strainer and splash guard |
US6312525B1 (en) | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
US20010038783A1 (en) | 2000-04-17 | 2001-11-08 | Hitachi Kokusai Electric Inc. | Dual loading port semiconductor processing equipment |
US6316162B1 (en) | 1998-04-30 | 2001-11-13 | Hyundai Electronics Industries Co., Ltd. | Polymer and a forming method of a micro pattern using the same |
US6316371B1 (en) | 1998-03-30 | 2001-11-13 | Asm International N.V. | Method for the chemical treatment of a semiconductor substrate |
US6315512B1 (en) | 1997-11-28 | 2001-11-13 | Mattson Technology, Inc. | Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber |
US20010041250A1 (en) | 2000-03-07 | 2001-11-15 | Werkhoven Christian J. | Graded thin films |
US20010040511A1 (en) | 1998-10-20 | 2001-11-15 | Brendyl Trent Bushner | Remote securities based data reception and order system |
US20010039966A1 (en) | 2000-03-28 | 2001-11-15 | Jim Walpole | Automatic valve |
US20010039922A1 (en) | 2000-05-09 | 2001-11-15 | Takashi Nakahara | Processing chamber |
US6320320B1 (en) | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
US20010042514A1 (en) | 2000-05-17 | 2001-11-22 | Shigeru Mizuno | CVD apparatus |
US20010042594A1 (en) | 1996-05-13 | 2001-11-22 | Shamouil Shamouilian | Process chamber having improved temperature control |
US20010042511A1 (en) | 2000-05-12 | 2001-11-22 | Applied Materials, Inc. | Reduction of plasma edge effect on plasma enhanced CVD processes |
US6321780B1 (en) | 1999-06-17 | 2001-11-27 | Benkan Corporation | Valve for controlling flow rate of gas |
US6321680B2 (en) | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US20010046765A1 (en) | 2000-05-05 | 2001-11-29 | Annalisa Cappellani | Method for producing a barrier layer in an electronic component and method for producing an electronic component with a barrier layer |
US6326322B1 (en) | 1999-10-29 | 2001-12-04 | Samsung Electronics Co., Ltd. | Method for depositing a silicon nitride layer |
US6325858B1 (en) | 1997-11-03 | 2001-12-04 | Asm America, Inc. | Long life high temperature process chamber |
US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
US20010049080A1 (en) | 2000-05-31 | 2001-12-06 | Takanobu Asano | Heat treatment system and method |
US20010048981A1 (en) | 1997-12-15 | 2001-12-06 | Nobumasa Suzuki | Method of processing substrate |
US20010049202A1 (en) | 1998-05-20 | 2001-12-06 | Kazuo Maeda | Method of film formation and method for manufacturing semiconductor device |
US6329297B1 (en) | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
USD451893S1 (en) | 1998-10-15 | 2001-12-11 | Meto International Gmbh | Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element |
US6328864B1 (en) | 1997-04-30 | 2001-12-11 | Tokyo Electron Limited | Vacuum processing apparatus |
US6328561B1 (en) | 1997-03-14 | 2001-12-11 | Asm International N.V. | Method for cooling a furnace, and furnace provided with a cooling device |
US20010052556A1 (en) | 1998-12-14 | 2001-12-20 | Weichi Ting | Injector |
US6333275B1 (en) | 1999-10-01 | 2001-12-25 | Novellus Systems, Inc. | Etchant mixing system for edge bevel removal of copper from silicon wafers |
US20010054381A1 (en) | 1998-12-14 | 2001-12-27 | Salvador P Umotoy | High temperature chemical vapor deposition chamber |
US20010054388A1 (en) | 2000-05-22 | 2001-12-27 | Qian Shao Shou | Single-substrate-film-forming method and single-substrate-heat-processing apparatus |
US6335240B1 (en) | 1998-01-06 | 2002-01-01 | Samsung Electronics Co., Ltd. | Capacitor for a semiconductor device and method for forming the same |
US6335049B1 (en) | 2000-01-03 | 2002-01-01 | Micron Technology, Inc. | Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor |
US6335293B1 (en) | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US20020001974A1 (en) | 2000-06-30 | 2002-01-03 | Lim Chan | Method for manufacturing zirconium oxide film for use in semiconductor device |
US20020000195A1 (en) | 2000-04-10 | 2002-01-03 | Won Bang | Concentration profile on demand gas delivery system (individual divert delivery system) |
US20020001971A1 (en) | 2000-06-27 | 2002-01-03 | Hag-Ju Cho | Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same |
US20020001976A1 (en) | 1995-07-06 | 2002-01-03 | Michal Danek | Chamber for constructing a film on a semiconductor wafer |
US20020000202A1 (en) | 2000-06-29 | 2002-01-03 | Katsuhisa Yuda | Remote plasma apparatus for processing sustrate with two types of gases |
US20020005943A1 (en) | 1998-11-30 | 2002-01-17 | Obschestvo S Ogranichennoi Otvetstvennostiju "Reflex Lait" | Method for inspection of an analyzed surface and surface scanning analyzer |
US20020005400A1 (en) | 1998-12-10 | 2002-01-17 | Arnon Gat | Rapid thermal processing chamber for processing multiple wafers |
US20020009560A1 (en) | 2000-05-30 | 2002-01-24 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
US20020009861A1 (en) | 1998-06-12 | 2002-01-24 | Pravin K. Narwankar | Method and apparatus for the formation of dielectric layers |
US20020009119A1 (en) | 2000-02-11 | 2002-01-24 | Matthew William T. | Environmental heat stress monitor |
US20020008270A1 (en) | 1998-09-03 | 2002-01-24 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
US6342427B1 (en) | 1999-12-02 | 2002-01-29 | Electronics And Telecommunications Research Institute | Method for forming micro cavity |
US6343239B1 (en) | 1996-11-26 | 2002-01-29 | Nippon Sanso Corporation | Transportation method for substrate wafers and transportation apparatus |
US20020011211A1 (en) | 2000-04-06 | 2002-01-31 | Halpin Michael W. | Barrier coating for vitreous materials |
US20020013792A1 (en) | 1999-12-30 | 2002-01-31 | Tomasz Imielinski | Virtual tags and the process of virtual tagging |
US20020011210A1 (en) | 2000-01-18 | 2002-01-31 | Kiyoshi Satoh | Semiconductor-processing device provided with a remote plasma source for self-cleaning |
US20020011310A1 (en) | 1999-04-12 | 2002-01-31 | Mohammad Kamarehi | Downstream sapphire elbow joint for remote plasma generator |
US6344084B1 (en) | 1998-09-11 | 2002-02-05 | Japan Science And Technology Corporation | Combinatorial molecular layer epitaxy device |
US6344232B1 (en) | 1998-07-30 | 2002-02-05 | The United States Of America As Represented By The Secretary Of The Air Force | Computer controlled temperature and oxygen maintenance for fiber coating CVD |
US20020014483A1 (en) | 2000-07-06 | 2002-02-07 | Fujio Suzuki | Batch type heat treatment system, method for controlling same, and heat treatment method |
US20020016829A1 (en) | 1998-03-19 | 2002-02-07 | Isochron Data Corporation | Remote data acquisition, transmission and analysis system including handheld wireless equipment |
US20020014204A1 (en) | 2000-06-13 | 2002-02-07 | Pyo Sung Gyu | Heater block having catalyst spray means |
US20020015853A1 (en) | 2000-07-31 | 2002-02-07 | Kazuhiro Wataya | Method for formation of thermal-spray coating layer of rare earth fluoride |
US6346419B1 (en) | 2000-06-26 | 2002-02-12 | The United States Of America As Represented By The Department Of Commerce | Photolysis system for fast-response NO2 measurements and method therefor |
US6347636B1 (en) | 1996-11-13 | 2002-02-19 | Applied Materials, Inc. | Methods and apparatus for gettering fluorine from chamber material surfaces |
US20020020429A1 (en) | 2000-07-07 | 2002-02-21 | Selbrede Steven C. | Systems and methods for remote plasma clean |
US20020022347A1 (en) | 2000-08-11 | 2002-02-21 | Jung-Woo Park | Selective epitaxial growth method in semiconductor device |
US6350391B1 (en) | 1995-11-09 | 2002-02-26 | Oramir Semiconductor Equipment Ltd. | Laser stripping improvement by modified gas composition |
US20020025688A1 (en) | 2000-08-23 | 2002-02-28 | Kazuhiko Kato | Heat-processing apparatus and method of semiconductor process |
US20020023677A1 (en) | 1997-11-14 | 2002-02-28 | Dao-Hong Zheng | Gas control device and method of supplying gas |
US6352049B1 (en) | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
US6352945B1 (en) | 1998-02-05 | 2002-03-05 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US20020027945A1 (en) | 2000-08-22 | 2002-03-07 | Ryoichi Hirano | Temperature measuring method in pattern drawing apparatus |
US20020030047A1 (en) | 2000-08-17 | 2002-03-14 | Shouqian Shao | Heat treatment apparatus having a thin light-transmitting window |
US20020031644A1 (en) | 2000-04-28 | 2002-03-14 | Malofsky Adam G. | Fastening device |
US6357984B1 (en) | 1997-07-03 | 2002-03-19 | Asm International N.V. | Storage assembly for wafers |
US20020033183A1 (en) | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
US6363294B1 (en) | 1997-12-30 | 2002-03-26 | International Business Machines Corporation | Method and system for semiconductor wafer fabrication process real-time in-situ interactive supervision |
US20020036065A1 (en) | 2000-08-22 | 2002-03-28 | Takayuki Yamagishi | Semiconductor processing module and apparatus |
USD455024S1 (en) | 2000-06-09 | 2002-04-02 | Levenger Company | Portable writing surface |
US6368773B1 (en) | 1998-11-27 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | Photoresist cross-linker and photoresist composition comprising the same |
US6367410B1 (en) | 1996-12-16 | 2002-04-09 | Applied Materials, Inc. | Closed-loop dome thermal control apparatus for a semiconductor wafer processing system |
KR20020027695A (en) | 2000-10-04 | 2002-04-15 | 박종섭 | Method of forming dielectric layer in semiconductor device |
US6370796B1 (en) | 2000-09-29 | 2002-04-16 | Sony Corporation | Heater block cooling system for wafer processing apparatus |
US6372583B1 (en) | 2000-02-09 | 2002-04-16 | Intel Corporation | Process for making semiconductor device with epitaxially grown source and drain |
US20020043337A1 (en) | 1997-11-03 | 2002-04-18 | Goodman Matthew G. | Low mass wafer support system |
US20020045336A1 (en) | 1997-12-18 | 2002-04-18 | Vanda Locati | Methods for forming improved passivation layers for integrated circuits |
JP2002118066A (en) | 2000-10-06 | 2002-04-19 | Toshiba Ceramics Co Ltd | Gas inlet pipe for semiconductor heat treatment oven |
US6375312B1 (en) | 1993-06-28 | 2002-04-23 | Canon Kabushiki Kaisha | HEAT GENERATING RESISTOR CONTAINING TaN0.8, SUBSTRATE PROVIDED WITH SAID HEAT GENERATING RESISTOR FOR LIQUID JET HEAD, LIQUID JET HEAD PROVIDED WITH SAID SUBSTRATE, AND LIQUID JET APPARATUS PROVIDED WITH SAID LIQUID JET HEAD |
US6374831B1 (en) | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
US6375749B1 (en) | 1999-07-14 | 2002-04-23 | Seh America, Inc. | Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
US20020047705A1 (en) | 2000-10-20 | 2002-04-25 | Mitsuo Tada | Frequency measuring device, polishing device using the same and eddy current sensor |
US20020048634A1 (en) | 2000-05-26 | 2002-04-25 | Cem Basceri | Physical vapor deposition methods |
US6379466B1 (en) | 1992-01-17 | 2002-04-30 | Applied Materials, Inc. | Temperature controlled gas distribution plate |
US20020050648A1 (en) | 2000-10-26 | 2002-05-02 | Takenobu Kishida | Semiconductor device and method for fabricating the same |
US20020052119A1 (en) | 1999-03-31 | 2002-05-02 | Patrick A. Van Cleemput | In-situ flowing bpsg gap fill process using hdp |
US6383300B1 (en) | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
US6383566B1 (en) | 1999-06-30 | 2002-05-07 | Saint-Gobain Vitrage | Process for depositing a tungsten-based and/or molybdenum-based layer on a rigid substrate, and substrate thus coated |
US6383955B1 (en) | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6387823B1 (en) | 2000-05-23 | 2002-05-14 | Advanced Micro Devices, Inc. | Method and apparatus for controlling deposition process using residual gas analysis |
US6387827B1 (en) | 1997-03-28 | 2002-05-14 | Imec (Vzw) | Method for growing thin silicon oxides on a silicon substrate using chlorine precursors |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US6390753B1 (en) | 1997-02-28 | 2002-05-21 | Asm International N.V. | System for loading, processing and unloading substrates arranged on a carrier |
USD457609S1 (en) | 2000-09-29 | 2002-05-21 | American Standard International Inc. | Shower plate |
US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US20020061716A1 (en) | 2000-03-31 | 2002-05-23 | Speedfam-Ipec Corporation | Workpiece carrier with adjustable pressure zones and barriers |
US6395650B1 (en) | 2000-10-23 | 2002-05-28 | International Business Machines Corporation | Methods for forming metal oxide layers with enhanced purity |
US20020064592A1 (en) | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
US20020064598A1 (en) | 1999-06-11 | 2002-05-30 | Shulin Wang | Method of depositing a thick titanium nitride film |
US20020062633A1 (en) | 2000-07-06 | 2002-05-30 | Pri Automation, Inc. | Reticle storage and retrieval system |
US6399022B1 (en) | 1999-06-28 | 2002-06-04 | Fairchild Semiconductor Corporation | Simplified ozonator for a semiconductor wafer cleaner |
US6398184B1 (en) | 2000-12-29 | 2002-06-04 | General Signal Corporation | Lock device and lock method for knife gate valves |
US20020066532A1 (en) | 1999-04-13 | 2002-06-06 | Hong Shih | Corrosion-resistant protective coating for an apparatus and method for processing a substrate |
US20020069222A1 (en) | 2000-12-01 | 2002-06-06 | Wiznet, Inc. | System and method for placing active tags in HTML document |
US20020068458A1 (en) | 2000-12-06 | 2002-06-06 | Chiang Tony P. | Method for integrated in-situ cleaning and susequent atomic layer deposition within a single processing chamber |
JP2002164342A (en) | 2000-07-21 | 2002-06-07 | Canon Sales Co Inc | Semiconductor device and manufacturing method therefor |
JP2002170781A (en) | 2000-11-30 | 2002-06-14 | Tokyo Electron Ltd | Heat-treating device |
US20020076507A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20020076490A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Variable gas conductance control for a process chamber |
US20020076944A1 (en) | 2000-11-09 | 2002-06-20 | Wang Qing Min | Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film |
US20020073922A1 (en) | 1996-11-13 | 2002-06-20 | Jonathan Frankel | Chamber liner for high temperature processing chamber |
US6410459B2 (en) | 1999-09-02 | 2002-06-25 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing |
US6410433B1 (en) | 1999-04-27 | 2002-06-25 | Tokyo Electron Limited | Thermal CVD of TaN films from tantalum halide precursors |
US20020081826A1 (en) | 2000-12-21 | 2002-06-27 | Rotondaro Antonio L. P. | Annealing of high-K dielectric materials |
US20020078893A1 (en) | 2000-05-18 | 2002-06-27 | Applied Materials , Inc. | Plasma enhanced chemical processing reactor and method |
US20020079056A1 (en) | 2000-10-26 | 2002-06-27 | Hiroyuki Kudo | Substrate processing unit |
US20020079714A1 (en) | 2000-10-02 | 2002-06-27 | Soucy Alan J. | Apparatus and methods for handling semiconductor wafers |
US6413583B1 (en) | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6413321B1 (en) | 2000-12-07 | 2002-07-02 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination on wafer backside during CVD process |
US20020086501A1 (en) | 2000-12-29 | 2002-07-04 | O'donnell Robert J. | Diamond coatings on reactor wall and method of manufacturing thereof |
US20020088542A1 (en) | 1999-07-07 | 2002-07-11 | Kazuyasu Nishikawa | Plasma processing apparatus |
US20020090735A1 (en) | 1997-02-28 | 2002-07-11 | Extraction Systems, Inc. | Protection of semiconductor fabrication and similar sensitive processes |
US6420279B1 (en) | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
US20020094388A1 (en) | 1997-07-07 | 2002-07-18 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US20020094378A1 (en) | 2000-12-29 | 2002-07-18 | O'donnell Robert J. | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
US6423949B1 (en) | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
US20020098627A1 (en) | 2000-11-24 | 2002-07-25 | Pomarede Christophe F. | Surface preparation prior to deposition |
US20020099470A1 (en) | 2000-09-27 | 2002-07-25 | Jan Zinger | Wafer handling system |
US20020100418A1 (en) | 2000-05-12 | 2002-08-01 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6429465B1 (en) | 1999-12-13 | 2002-08-06 | Fuji Xerox Co., Ltd. | Nitride semiconductor device and method of manufacturing the same |
USD461233S1 (en) | 2001-11-29 | 2002-08-06 | James Michael Whalen | Marine deck drain strainer |
KR20020064028A (en) | 2001-01-31 | 2002-08-07 | 한빛 세마텍(주) | Cleaning and surface treatment equipment by pulsed ultra-violet light radiation |
US20020106909A1 (en) | 2001-02-07 | 2002-08-08 | Hitoshi Kato | Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method |
US20020104751A1 (en) | 1999-11-18 | 2002-08-08 | Drewery John Stephen | Method and apparatus for ionized physical vapor deposition |
US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US6433298B1 (en) | 1998-03-20 | 2002-08-13 | Tokyo Electron Limited | Plasma processing apparatus |
US6432255B1 (en) | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
US6432849B1 (en) | 1998-02-04 | 2002-08-13 | Nikon Corporation | Substrate storage cassette positioning device and method |
US6432206B1 (en) | 1999-08-30 | 2002-08-13 | Si Diamond Technology, Inc. | Heating element for use in a hot filament chemical vapor deposition chamber |
US20020110695A1 (en) | 1999-03-17 | 2002-08-15 | Yang Barry Lee-Mean | Multilayer article and method of making by arc plasma deposition |
US20020112114A1 (en) | 2001-02-13 | 2002-08-15 | Blair William R. | Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type |
US20020110991A1 (en) | 2001-02-13 | 2002-08-15 | Micron Technology, Inc. | Sequential pulse deposition |
US20020108570A1 (en) | 2000-04-14 | 2002-08-15 | Sven Lindfors | Method and apparatus of growing a thin film onto a substrate |
US20020108714A1 (en) | 1997-03-03 | 2002-08-15 | Kenneth Doering | Processing chamber for atomic layer deposition processes |
US20020109115A1 (en) | 2000-12-15 | 2002-08-15 | Nor-Cal Products, Inc. | Pressure controller and method |
US20020108670A1 (en) | 2001-02-12 | 2002-08-15 | Baker John Eric | High purity chemical container with external level sensor and removable dip tube |
US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
US6435798B1 (en) | 1999-04-09 | 2002-08-20 | Asm Japan K.K. | Semiconductor processing apparatus with substrate-supporting mechanism |
US6435865B1 (en) | 2001-07-30 | 2002-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for positioning gas injectors in a vertical furnace |
US6438502B1 (en) | 1992-10-07 | 2002-08-20 | Dallas Semiconductor Corporation | Environmental condition sensor device and method |
US6437444B2 (en) | 1996-12-19 | 2002-08-20 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
US20020115252A1 (en) | 2000-10-10 | 2002-08-22 | Haukka Suvi P. | Dielectric interface films and methods therefor |
US20020114886A1 (en) | 1995-07-06 | 2002-08-22 | Applied Materials, Inc. | Method of tisin deposition using a chemical vapor deposition process |
JP2002237375A (en) | 2000-12-05 | 2002-08-23 | Ibiden Co Ltd | Ceramic plate for semiconductor manufacturing/testing device, and manufacturing method of the same |
US6439822B1 (en) | 1998-09-22 | 2002-08-27 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US6441350B1 (en) | 1998-05-11 | 2002-08-27 | Brooks Automation Inc. | Temperature control system for a thermal reactor |
US6440261B1 (en) | 1999-05-25 | 2002-08-27 | Applied Materials, Inc. | Dual buffer chamber cluster tool for semiconductor wafer processing |
US20020117262A1 (en) | 2000-02-28 | 2002-08-29 | Applied Materials, Inc. | Chemical vapor deposition chamber lid assembly |
US20020117113A1 (en) | 2001-02-27 | 2002-08-29 | Tokyo Electron Limited | Substrate processing apparatus |
US6445574B1 (en) | 2000-10-30 | 2002-09-03 | Motorola, Inc. | Electronic device |
US20020123237A1 (en) | 2001-03-05 | 2002-09-05 | Tue Nguyen | Plasma pulse semiconductor processing system and method |
US20020122885A1 (en) | 2001-03-01 | 2002-09-05 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US20020121312A1 (en) * | 2001-03-01 | 2002-09-05 | Dmitry Lubomirsky | Lift pin alignment and operation methods and apparatus |
US20020123200A1 (en) | 2000-12-04 | 2002-09-05 | Naoko Yamamoto | Plasma processing apparatus |
US20020123230A1 (en) | 1999-09-23 | 2002-09-05 | Jerome Hubacek | Gas distribution apparatus for semiconductor processing |
US6446573B2 (en) | 1999-05-31 | 2002-09-10 | Tadahiro Ohmi | Plasma process device |
US6447232B1 (en) | 1994-04-28 | 2002-09-10 | Semitool, Inc. | Semiconductor wafer processing apparatus having improved wafer input/output handling system |
US6448192B1 (en) | 2001-04-16 | 2002-09-10 | Motorola, Inc. | Method for forming a high dielectric constant material |
US6447651B1 (en) | 2001-03-07 | 2002-09-10 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
US6447937B1 (en) | 1997-02-26 | 2002-09-10 | Kyocera Corporation | Ceramic materials resistant to halogen plasma and components using the same |
US20020124906A1 (en) | 2000-12-04 | 2002-09-12 | Yoko Suzuki | Substrate transport apparatus, POD and method |
US20020127956A1 (en) | 2001-03-12 | 2002-09-12 | Jalal Ashjaee | Method of sealing wafer backside for full-face electrochemical plating |
US6451713B1 (en) | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
US6450117B1 (en) | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
US6450757B1 (en) | 1998-11-17 | 2002-09-17 | Tokyo Electron Limited | Conveyor system |
US6452017B1 (en) | 1998-08-27 | 2002-09-17 | Micron Technology, Inc. | Complexes having tris(pyrazolyl)methanate ligands |
US20020129768A1 (en) | 2001-03-15 | 2002-09-19 | Carpenter Craig M. | Chemical vapor deposition apparatuses and deposition methods |
US20020132408A1 (en) | 2001-01-12 | 2002-09-19 | Ce Ma | Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film |
US6455225B1 (en) | 1999-08-17 | 2002-09-24 | Hyundai Electronics Industries Co., Ltd. | Photoresist monomers having stability to post exposure delay, polymers thereof and photoresist compositions containing the same |
US6455098B2 (en) | 2000-03-09 | 2002-09-24 | Semix Incorporated | Wafer processing apparatus and method |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US6454909B1 (en) | 1999-07-07 | 2002-09-24 | Tokyo Electron Limited | Method and apparatus for forming a film on an object to be processed |
US20020134511A1 (en) | 2001-02-08 | 2002-09-26 | Joichi Ushioda | Substrate supporting table,method for producing same, and processing system |
US20020136214A1 (en) | 2000-08-14 | 2002-09-26 | Consumer Direct Link | Pervasive computing network architecture |
US20020136909A1 (en) | 2000-12-20 | 2002-09-26 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
US20020139775A1 (en) | 2001-03-30 | 2002-10-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer |
US6461436B1 (en) | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
US6460482B1 (en) | 2000-01-20 | 2002-10-08 | Sumitomo Electric Industries, Ltd. | Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
US6462310B1 (en) | 1998-08-12 | 2002-10-08 | Asml Us, Inc | Hot wall rapid thermal processor |
US6461435B1 (en) | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
US20020146512A1 (en) | 2001-02-08 | 2002-10-10 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
US6464825B1 (en) | 1999-06-15 | 2002-10-15 | Ebara Corporation | Substrate processing apparatus including a magnetically levitated and rotated substrate holder |
US20020151327A1 (en) | 2000-12-22 | 2002-10-17 | David Levitt | Program selector and guide system and method |
US20020152244A1 (en) | 2000-12-22 | 2002-10-17 | International Business Machines Corporation | Method and apparatus to dynamically create a customized user interface based on a document type definition |
US6468924B2 (en) | 2000-12-06 | 2002-10-22 | Samsung Electronics Co., Ltd. | Methods of forming thin films by atomic layer deposition |
US20020155219A1 (en) | 1999-06-11 | 2002-10-24 | Shulin Wang | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
US20020155708A1 (en) | 2001-04-18 | 2002-10-24 | Guo-Qiang Lo | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean |
US6472266B1 (en) | 2001-06-18 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Method to reduce bit line capacitance in cub drams |
US6471779B1 (en) | 1999-04-30 | 2002-10-29 | Ngk Insulators, Ltd. | Gas feed ceramic structure for semiconductor-producing apparatus |
US20020157611A1 (en) | 2001-03-07 | 2002-10-31 | Niklas Bondestam | ALD reactor and method with controlled wall temperature |
US20020160112A1 (en) | 2001-02-28 | 2002-10-31 | Japan Pionics Co., Ltd | Chemical vapor deposition apparatus and chemical vapor deposition method |
US6474987B1 (en) | 1999-09-03 | 2002-11-05 | Mitsubishi Materials Silicon Corporation | Wafer holder |
US6475276B1 (en) | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
US6475902B1 (en) | 2000-03-10 | 2002-11-05 | Applied Materials, Inc. | Chemical vapor deposition of niobium barriers for copper metallization |
US6475930B1 (en) | 2000-01-31 | 2002-11-05 | Motorola, Inc. | UV cure process and tool for low k film formation |
US20020164420A1 (en) | 2002-02-25 | 2002-11-07 | Derderian Garo J. | Deposition methods and apparatus for improved delivery of metastable species |
US20020164423A1 (en) | 2001-03-19 | 2002-11-07 | Chiang Tony P. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6478872B1 (en) | 1999-01-18 | 2002-11-12 | Samsung Electronics Co., Ltd. | Method of delivering gas into reaction chamber and shower head used to deliver gas |
US20020168870A1 (en) | 2001-05-09 | 2002-11-14 | Nobuo Matsuki | Method of forming low dielectric constant insulation film for semiconductor device |
US6482663B1 (en) | 1995-04-27 | 2002-11-19 | Telefonaktiebolaget Lm Ericsson (Publ) | Silicon substrate having a recess for receiving an element, and a method of producing such a recess |
US6482331B2 (en) | 2001-04-18 | 2002-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing contamination in a plasma process chamber |
US6481945B1 (en) | 1998-06-05 | 2002-11-19 | Asm International N.V. | Method and device for transferring wafers |
US6483989B1 (en) | 2000-11-21 | 2002-11-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device producing method |
KR20020086763A (en) | 2001-05-10 | 2002-11-20 | 주식회사 엘지이아이 | Thermocouple for continuous polymerizing system using plasma |
US20020174106A1 (en) | 1997-02-10 | 2002-11-21 | Actioneer, Inc. | Method and apparatus for receiving information in response to a request |
US20020170676A1 (en) | 2000-01-10 | 2002-11-21 | Mitrovic Andrej S. | Segmented electrode apparatus and method for plasma processing |
US20020172768A1 (en) | 2001-05-21 | 2002-11-21 | Nec Corporation | Method for vapor deposition of a metal compound film |
US6490493B1 (en) | 1999-01-21 | 2002-12-03 | Rosemount Inc. | Industrial process device management software |
US6488774B1 (en) | 1999-02-26 | 2002-12-03 | Ebara Corporation | Trap apparatus |
US20020184111A1 (en) | 2001-02-07 | 2002-12-05 | Exalt Solutions, Inc. | Intelligent multimedia e-catalog |
US20020181612A1 (en) | 2001-05-29 | 2002-12-05 | Motorola, Inc. | Monolithic, software-definable circuit including a power amplifier and method for use therewith |
US20020179011A1 (en) | 2001-06-05 | 2002-12-05 | Rajanikant Jonnalagadda | Gas port sealing for CVD/CVI furnace hearth plates |
US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
US20020187656A1 (en) | 2001-05-11 | 2002-12-12 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US20020188376A1 (en) | 2000-08-18 | 2002-12-12 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
US6494065B2 (en) | 2000-09-26 | 2002-12-17 | Babbitt Steam Specialty Company | Valve lockout/tag out system |
US6494998B1 (en) | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
US6496819B1 (en) | 1998-12-28 | 2002-12-17 | Oracle Corporation | Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability |
US6497734B1 (en) | 2002-01-02 | 2002-12-24 | Novellus Systems, Inc. | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput |
US6497767B1 (en) | 1999-05-14 | 2002-12-24 | Tokyo Electron Limited | Thermal processing unit for single substrate |
US6498091B1 (en) | 2000-11-01 | 2002-12-24 | Applied Materials, Inc. | Method of using a barrier sputter reactor to remove an underlying barrier layer |
US20020197402A1 (en) | 2000-12-06 | 2002-12-26 | Chiang Tony P. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US20020197849A1 (en) | 2000-01-18 | 2002-12-26 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
US6499533B2 (en) | 2000-05-25 | 2002-12-31 | Sumitomo Heavy Industries, Ltd. | Cooling disk unit for use in a wafer chucking device |
US6500487B1 (en) | 1999-10-18 | 2002-12-31 | Advanced Technology Materials, Inc | Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions |
US20030000647A1 (en) | 2001-06-29 | 2003-01-02 | Applied Materials, Inc. | Substrate processing chamber |
US20030003635A1 (en) | 2001-05-23 | 2003-01-02 | Paranjpe Ajit P. | Atomic layer deposition for fabricating thin films |
US20030003696A1 (en) | 2001-06-29 | 2003-01-02 | Avgerinos Gelatos | Method and apparatus for tuning a plurality of processing chambers |
US20030002562A1 (en) | 2001-06-27 | 2003-01-02 | Yerlikaya Y. Denis | Temperature probe adapter |
US20030003719A1 (en) | 2001-06-28 | 2003-01-02 | Lim Bi O. | Method and apparatus for manufacturing a barrier layer of semiconductor device |
US20030003607A1 (en) | 2001-06-29 | 2003-01-02 | Akira Kagoshima | Disturbance-free, recipe-controlled plasma processing system and method |
US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
US6503079B2 (en) | 2001-01-15 | 2003-01-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US6503365B1 (en) | 1998-04-21 | 2003-01-07 | Samsung Electronics Co., Ltd. | Multi-chamber system having compact installation set-up for an etching facility for semiconductor device manufacturing |
US6503826B1 (en) | 1997-11-12 | 2003-01-07 | Nec Corporation | Semiconductor device and method for manufacturing the same |
US6503562B1 (en) | 1999-05-17 | 2003-01-07 | Applied Materials, Inc. | Semiconductor fabrication apparatus and fabrication method thereof |
US20030008602A1 (en) | 2001-03-12 | 2003-01-09 | Jalal Ashjaee | Method and apparatus of sealing wafer backside for full-face electrochemical plating |
US20030008528A1 (en) | 1999-08-17 | 2003-01-09 | Applied Materials, Inc. | Surface treatment of c-doped SiO2 film to enhance film stability during 02 ashing |
US6506253B2 (en) | 2000-09-22 | 2003-01-14 | Tokyo Electron Limited | Photo-excited gas processing apparatus for semiconductor process |
US6507410B1 (en) | 1997-09-08 | 2003-01-14 | Canon Kabushiki Kaisha | Method for non-linear document conversion and printing |
US6506009B1 (en) | 2000-03-16 | 2003-01-14 | Applied Materials, Inc. | Apparatus for storing and moving a cassette |
US20030013314A1 (en) | 2001-07-06 | 2003-01-16 | Chentsau Ying | Method of reducing particulates in a plasma etch chamber during a metal etch process |
US20030010452A1 (en) | 2001-07-16 | 2003-01-16 | Jong-Chul Park | Shower head of a wafer treatment apparatus having a gap controller |
US20030010451A1 (en) | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20030010355A1 (en) | 2001-07-13 | 2003-01-16 | Applied Materials, Inc | Enhanced remote plasma cleaning |
US20030015596A1 (en) | 2001-06-05 | 2003-01-23 | Evans Richard O. | Mixing fluid streams |
US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US20030017265A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
DE10133013A1 (en) | 2001-07-06 | 2003-01-23 | Karlsruhe Forschzent | Barrier lock, to give a controlled released of a liquid sample from a reservoir, has a thin membrane covering the substrate and the holding recesses, with a heater wire to open the membrane through an electrical current signal |
US20030017268A1 (en) | 2001-07-18 | 2003-01-23 | Applied Materials, Inc. | .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity |
US20030015141A1 (en) | 2000-04-28 | 2003-01-23 | Yoji Takagi | Wafer supporting device in semiconductor manufacturing device |
US20030015294A1 (en) | 1999-05-27 | 2003-01-23 | Albert Wang | Rapid heating and cooling of workpiece chucks |
US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US20030022523A1 (en) | 1998-06-30 | 2003-01-30 | Fujitsu Limited | Manufacture system for semiconductor device with thin gate insulating film |
US20030022468A1 (en) | 2001-07-19 | 2003-01-30 | Yoshimi Shioya | Manufacturing method of semiconductor device |
US20030023338A1 (en) | 2001-07-27 | 2003-01-30 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US20030019580A1 (en) | 2000-03-30 | 2003-01-30 | Strang Eric J. | Method of and apparatus for tunable gas injection in a plasma processing system |
US6514313B1 (en) | 2001-06-22 | 2003-02-04 | Aeronex, Inc. | Gas purification system and method |
US6514666B1 (en) | 1999-11-05 | 2003-02-04 | Hyundai Electronics Industries Co., Ltd. | Photoresist monomers, polymers thereof and photoresist compositions containing it |
US20030025146A1 (en) | 2001-07-23 | 2003-02-06 | Pravin Narwankar | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
US20030024901A1 (en) | 2001-01-26 | 2003-02-06 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US20030026904A1 (en) | 2001-08-03 | 2003-02-06 | Applied Materials, Inc. | Susceptor shaft vacuum pumping |
JP2003035574A (en) | 2001-07-23 | 2003-02-07 | Mitsubishi Heavy Ind Ltd | Responsive sensor and application measurement system |
US20030029381A1 (en) | 2001-08-10 | 2003-02-13 | Michio Nishibayashi | Vertical chemical vapor deposition system |
US20030029563A1 (en) | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
US20030029475A1 (en) | 2001-06-01 | 2003-02-13 | Applied Materials, Inc., A Delaware Corporation | Multistep remote plasma clean process |
US20030029303A1 (en) | 2001-08-09 | 2003-02-13 | Yutaka Hasegawa | Electronic musical instrument with customization of auxiliary capability |
US20030032297A1 (en) | 2001-08-09 | 2003-02-13 | Lindstrom L. Karsten V. | Method to GaAs based lasers and a GaAs based laser |
US6521295B1 (en) | 2001-04-17 | 2003-02-18 | Pilkington North America, Inc. | Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby |
US6521547B1 (en) | 2001-09-07 | 2003-02-18 | United Microelectronics Corp. | Method of repairing a low dielectric constant material layer |
US20030035002A1 (en) | 2001-08-15 | 2003-02-20 | Samsung Electronics Co., Ltd. | Alternate interpretation of markup language documents |
US20030035705A1 (en) | 1999-09-29 | 2003-02-20 | Tokyo Electron Limited | Chuck transport method and system |
US20030036272A1 (en) | 2000-06-13 | 2003-02-20 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
JP2003053688A (en) | 2001-05-15 | 2003-02-26 | Fanuc Robotics North America Inc | Robot system having teach pendant |
US20030040196A1 (en) | 2001-08-27 | 2003-02-27 | Lim Jung Wook | Method of forming insulation layer in semiconductor devices for controlling the composition and the doping concentration |
US20030040841A1 (en) | 2001-08-06 | 2003-02-27 | Seminet Inc. | Robotic storage buffer system for substrate carrier pods |
US20030040120A1 (en) | 1999-10-12 | 2003-02-27 | Allen George A. | Systems and methods for measuring nitrate levels |
US20030037800A1 (en) | 2001-08-27 | 2003-02-27 | Applied Materials, Inc. | Method for removing contamination particles from substrate processing chambers |
US20030040158A1 (en) | 2001-08-21 | 2003-02-27 | Nec Corporation | Semiconductor device and method of fabricating the same |
US6528752B1 (en) | 1999-06-18 | 2003-03-04 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US6528767B2 (en) | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
US6527884B1 (en) | 2000-01-20 | 2003-03-04 | Hitachi Kokusai Electric, Inc. | Hydrogen annealing process and apparatus therefor |
US6528171B1 (en) | 1999-03-03 | 2003-03-04 | Widia Gmbh | Tool with a molybdenum sulfide containing coating and method for its production |
US6528430B2 (en) | 2001-05-01 | 2003-03-04 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 |
US20030045961A1 (en) | 2001-08-31 | 2003-03-06 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
US20030042419A1 (en) | 1999-12-21 | 2003-03-06 | Hirohumi Katsumata | Method and apparatus for detecting a wafer's posture on a susceptor |
US20030041971A1 (en) | 2001-08-28 | 2003-03-06 | Nec Corporation | Substrate processing system for performing exposure process in gas atmosphere |
US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
US6530994B1 (en) | 1997-08-15 | 2003-03-11 | Micro C Technologies, Inc. | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
US20030049571A1 (en) | 1999-12-02 | 2003-03-13 | Axcelis Technologies, Inc. | Process for reducing edge roughness in patterned photoresist |
US20030049937A1 (en) | 2001-09-05 | 2003-03-13 | Naoki Suzuki | Apparatus and method for surface treatment to substrate |
US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US20030049580A1 (en) | 2000-12-22 | 2003-03-13 | Goodman Matthew G. | Susceptor pocket profile to improve process performance |
US20030049375A1 (en) | 2001-09-10 | 2003-03-13 | Tue Nguyen | Nanolayer thick film processing system and method |
US6534133B1 (en) | 1996-06-14 | 2003-03-18 | Research Foundation Of State University Of New York | Methodology for in-situ doping of aluminum coatings |
KR100377095B1 (en) | 2002-02-01 | 2003-03-20 | Nexo Co Ltd | Semiconductor fabrication apparatus using low energy plasma |
US20030054670A1 (en) | 2001-09-17 | 2003-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite microelectronic dielectric layer with inhibited crack susceptibility |
US6536950B1 (en) | 1999-10-13 | 2003-03-25 | Texaco Inc. | Sapphire reinforced thermocouple protection tube |
US20030059535A1 (en) | 2001-09-25 | 2003-03-27 | Lee Luo | Cycling deposition of low temperature films in a cold wall single wafer process chamber |
US20030059980A1 (en) | 2001-09-25 | 2003-03-27 | Ling Chen | Copper interconnect barrier layer structure and formation method |
US20030057848A1 (en) | 2001-09-21 | 2003-03-27 | Mitsuhiro Yuasa | Plasma processing apparatus |
US6539891B1 (en) | 1999-06-19 | 2003-04-01 | Genitech, Inc. | Chemical deposition reactor and method of forming a thin film using the same |
US6540469B2 (en) | 2000-09-05 | 2003-04-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US6540838B2 (en) | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US20030062359A1 (en) | 1999-05-19 | 2003-04-03 | Henry Ho | Multi-zone resistive heater |
US20030065413A1 (en) | 2001-10-01 | 2003-04-03 | William Liteplo | Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment |
US20030066826A1 (en) | 2001-10-05 | 2003-04-10 | Samsung Electronics Co., Ltd. | Apparatus for processing a substrate including a heating apparatus |
US20030066482A1 (en) | 1999-08-17 | 2003-04-10 | Applied Materials, Inc. | Lid cooling mechanism and method for optimized deposition of low-K dielectric using TRI methylsilane-ozone based processes |
US20030071015A1 (en) | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Etch process for etching microstructures |
US20030072882A1 (en) | 2001-08-03 | 2003-04-17 | Jaakko Niinisto | Method of depositing rare earth oxide thin films |
US20030070617A1 (en) | 2001-10-11 | 2003-04-17 | Yong-Il Kim | Atomic layer deposition apparatus and process using remote plasma |
US6552209B1 (en) | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
US20030075107A1 (en) | 2001-10-24 | 2003-04-24 | Junichi Miyano | Apparatus and method for manufacturing semiconductor |
US20030075925A1 (en) | 2001-07-03 | 2003-04-24 | Sven Lindfors | Source chemical container assembly |
US20030077857A1 (en) | 1999-08-17 | 2003-04-24 | Applied Materials, Inc. | Post-deposition treatment to enhance properties of SI-O-C low films |
US20030077883A1 (en) | 2001-09-07 | 2003-04-24 | Naoto Ohtake | Deposition method, deposition apparatus, and semiconductor device |
US20030082307A1 (en) | 2001-10-26 | 2003-05-01 | Applied Materials, Inc. | Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application |
US20030082296A1 (en) | 2001-09-14 | 2003-05-01 | Kai Elers | Metal nitride deposition by ALD with reduction pulse |
US6559026B1 (en) | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US20030085663A1 (en) | 1999-12-13 | 2003-05-08 | Horsky Thomas N. | Electron beam ion source with integral low-temperature vaporizer |
JP2003133300A (en) | 2001-10-26 | 2003-05-09 | Tokyo Electron Ltd | Apparatus and method for forming film |
US20030091938A1 (en) | 2000-02-17 | 2003-05-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon layer |
US6565763B1 (en) | 1999-06-07 | 2003-05-20 | Kabushiki Kaisha Toshiba | Method for manufacturing porous structure and method for forming pattern |
US6566278B1 (en) | 2000-08-24 | 2003-05-20 | Applied Materials Inc. | Method for densification of CVD carbon-doped silicon oxide films through UV irradiation |
US20030094133A1 (en) | 2001-11-21 | 2003-05-22 | Applied Materials, Inc. | Piezoelectric vaporizer |
JP2003153706A (en) | 2001-11-20 | 2003-05-27 | Toyobo Co Ltd | Female material for hook-and-loop fastener and production method thereof |
US6569239B2 (en) | 1998-07-29 | 2003-05-27 | Shin-Etsu Handotai Co., Ltd. | Silicon epitaxial wafer and production method therefor |
US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
US6574644B2 (en) | 1997-11-26 | 2003-06-03 | Siemens Corporate Research, Inc | Automatic capturing of hyperlink specifications for multimedia documents |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6576564B2 (en) | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
US20030109107A1 (en) | 2001-12-06 | 2003-06-12 | Macronix International Co., Ltd. | Method for forming nitride spacer by using atomic layer deposition |
US20030109951A1 (en) | 2000-03-10 | 2003-06-12 | Hsiung Chang-Meng B. | Monitoring system for an industrial process using one or more multidimensional variables |
US6580050B1 (en) | 2002-01-16 | 2003-06-17 | Pace, Incorporated | Soldering station with built-in self-calibration function |
US6579833B1 (en) | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
US6578589B1 (en) | 1999-03-31 | 2003-06-17 | Super Silicon Crystal Research Institute Corp. | Apparatus for manufacturing semiconductor wafer |
US20030111963A1 (en) | 2001-12-14 | 2003-06-19 | Tolmachev Yuri Nikolaevich | Inductively coupled plasma system |
US20030113995A1 (en) | 2001-12-14 | 2003-06-19 | Applied Materials, Inc. | Method for depositing a low k dielectric film (k<3.5) for hard mask application |
US20030111012A1 (en) | 1999-12-24 | 2003-06-19 | Murata Manufacturing Co., Ltd. | Method for forming a thin film and a thin film forming apparatus therefor |
US20030111013A1 (en) | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
TW538327B (en) | 2001-04-24 | 2003-06-21 | Unit Instr Inc | System and method for a mass flow controller |
US6583572B2 (en) | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
US6582174B1 (en) | 1999-01-26 | 2003-06-24 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
US6583048B2 (en) | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US6587108B1 (en) | 1999-07-01 | 2003-07-01 | Honeywell Inc. | Multivariable process matrix display and methods regarding same |
TW540093B (en) | 2001-04-05 | 2003-07-01 | Angstron Systems Inc | Atomic layer deposition system and method |
US20030124842A1 (en) | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
US20030124818A1 (en) | 2001-12-28 | 2003-07-03 | Applied Materials, Inc. | Method and apparatus for forming silicon containing films |
US20030124792A1 (en) | 2001-12-27 | 2003-07-03 | Samsung Electronics Co., Ltd. | Methods for fabricating semiconductor devices having capacitors |
US20030121608A1 (en) | 2001-10-26 | 2003-07-03 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20030124820A1 (en) | 2001-04-12 | 2003-07-03 | Johnsgard Kristian E. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US6590251B2 (en) | 1999-12-08 | 2003-07-08 | Samsung Electronics Co., Ltd. | Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors |
US6589707B2 (en) | 2000-02-18 | 2003-07-08 | Hyundai Electronics Industries Co., Ltd. | Partially crosslinked polymer for bilayer photoresist |
US20030127049A1 (en) | 2002-01-08 | 2003-07-10 | Applied Materials, Inc. | Process chamber having component with yttrium-aluminum coating |
US6594550B1 (en) | 2002-03-29 | 2003-07-15 | Asm America, Inc. | Method and system for using a buffer to track robotic movement |
US20030133854A1 (en) | 2002-01-17 | 2003-07-17 | Mitsubishi Denki Kabushiki Kaisha | System for supplying a gas and method of supplying a gas |
US20030132319A1 (en) | 2002-01-15 | 2003-07-17 | Hytros Mark M. | Showerhead assembly for a processing chamber |
US20030134038A1 (en) | 1997-08-11 | 2003-07-17 | Paranjpe Ajit P. | Method and apparatus for layer by layer deposition of thin films |
US6596398B1 (en) | 1998-08-21 | 2003-07-22 | Atofina Chemicals, Inc. | Solar control coated glass |
US6598559B1 (en) | 2000-03-24 | 2003-07-29 | Applied Materials, Inc. | Temperature controlled chamber |
US20030143328A1 (en) | 2002-01-26 | 2003-07-31 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20030143846A1 (en) | 2000-09-25 | 2003-07-31 | Akira Sekiya | Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds |
US20030141820A1 (en) | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
US20030141527A1 (en) | 2002-01-30 | 2003-07-31 | Joo Heung-Jin | Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same |
US20030140851A1 (en) | 2002-01-25 | 2003-07-31 | Applied Materials, Inc. | Gas distribution showerhead |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
US20030149506A1 (en) | 2002-02-06 | 2003-08-07 | Asm International Nv | Method and system to process semiconductor wafers |
US20030145789A1 (en) | 2000-02-10 | 2003-08-07 | Hartmut Bauch | Gas supply device for precursors with a low vapor pressure |
US20030153177A1 (en) | 2002-02-11 | 2003-08-14 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US20030150386A1 (en) | 2002-01-17 | 2003-08-14 | Hitachi Kokusai Electric, Inc. | Apparatus for fabricating a semiconductor device |
US20030153186A1 (en) | 1999-01-05 | 2003-08-14 | Ronny Bar-Gadda | Apparatus and method using a remote RF energized plasma for processing semiconductor wafers |
US6607868B2 (en) | 2000-06-30 | 2003-08-19 | Hynix Semiconductor Inc. | Photoresist monomers, polymers thereof, and photoresist compositions containing the same |
US6607602B1 (en) | 1997-01-27 | 2003-08-19 | Asm International N.V. | Device for processing semiconductor wafers |
US6607948B1 (en) | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
US6608745B2 (en) | 2000-01-20 | 2003-08-19 | Ngk Insulators, Ltd. | Electrostatic chunks |
US20030157432A1 (en) | 2002-01-31 | 2003-08-21 | Jorg Rottstegge | Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties |
US20030157436A1 (en) | 2002-02-20 | 2003-08-21 | Dirk Manger | Method for forming a hard mask in a layer on a planar device |
US20030157345A1 (en) | 2000-08-01 | 2003-08-21 | Nasser Beldi | Plasma deposited barrier coating comprising an interface layer, method of obtaining same and container coated therewith |
US20030159653A1 (en) | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US20030162412A1 (en) | 2000-08-18 | 2003-08-28 | Gishi Chung | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
US6617253B1 (en) | 1999-07-20 | 2003-09-09 | Samsung Electronics Co., Ltd. | Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method |
US20030168699A1 (en) | 2002-03-05 | 2003-09-11 | Tatsuya Honda | Transistor |
US20030170945A1 (en) | 2001-12-07 | 2003-09-11 | Tokyo Electron Limited | Radical processing of a sub-nanometer insulation film |
US20030168008A1 (en) | 2001-03-28 | 2003-09-11 | Tadahiro Ohmi | Plasma processing device |
US20030168174A1 (en) | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
US20030168750A1 (en) | 2002-03-11 | 2003-09-11 | Cem Basceri | MIM capacitor with metal nitride electrode materials and method of formation |
US20030168012A1 (en) | 2002-03-07 | 2003-09-11 | Hitoshi Tamura | Plasma processing device and plasma processing method |
US20030168948A1 (en) | 2002-02-21 | 2003-09-11 | Takayuki Yamagishi | Semiconductor manufacturing equipment and maintenance method |
US20030168001A1 (en) | 2002-03-08 | 2003-09-11 | Sundew Technologies, Llc | ALD method and apparatus |
US20030170583A1 (en) | 2002-03-01 | 2003-09-11 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and a method for fabricating substrates |
US6620251B2 (en) | 2000-03-08 | 2003-09-16 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US20030173030A1 (en) | 2000-07-11 | 2003-09-18 | Nobuo Ishii | Plasma processing apparatus |
US20030176074A1 (en) | 2002-03-18 | 2003-09-18 | Applied Materials, Inc. | Tandem etch chamber plasma processing system |
US20030173490A1 (en) | 2000-11-03 | 2003-09-18 | Applied Materials, Inc. | Facilities connection box for pre-facilitation of wafer fabrication equipment |
US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
US6623799B1 (en) | 1998-09-11 | 2003-09-23 | Genitech Co., Ltd. | Chemical vapor deposition method using a catalyst on a substrate surface |
US20030180458A1 (en) | 2002-01-17 | 2003-09-25 | Sundew Technologies, Llc | ALD apparatus and method |
US20030181065A1 (en) | 2002-03-21 | 2003-09-25 | O'donnell Robert J. | Low contamination components for semiconductor processing apparatus and methods for making components |
US20030178145A1 (en) | 2002-03-25 | 2003-09-25 | Applied Materials, Inc. | Closed hole edge lift pin and susceptor for wafer process chambers |
US6627503B2 (en) | 2000-02-11 | 2003-09-30 | Sharp Laboratories Of America, Inc. | Method of forming a multilayer dielectric stack |
US6627268B1 (en) | 2001-05-03 | 2003-09-30 | Novellus Systems, Inc. | Sequential ion, UV, and electron induced chemical vapor deposition |
US20030183156A1 (en) | 2002-03-26 | 2003-10-02 | Dando Ross S. | Chemical vapor deposition methods, atomic layer deposition methods, and valve assemblies for use with a reactive precursor in semiconductor processing |
US20030183856A1 (en) | 2002-03-28 | 2003-10-02 | Karsten Wieczorek | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
US6630030B1 (en) | 1997-07-04 | 2003-10-07 | Asm Microchemistry Ltd. | Method and apparatus for growing thin films |
US20030190804A1 (en) | 2002-04-09 | 2003-10-09 | Glenn W. Benjamin | Simultaneous cyclical deposition in different processing regions |
US20030188685A1 (en) | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
US20030188682A1 (en) | 1999-12-03 | 2003-10-09 | Asm Microchemistry Oy | Method of growing oxide films |
US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
US6633364B2 (en) | 2000-03-31 | 2003-10-14 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US20030192875A1 (en) | 2002-04-12 | 2003-10-16 | Lisa Bieker | Heating jacket assembly with field replaceable thermostat |
US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
US20030198587A1 (en) | 1999-02-12 | 2003-10-23 | Gelest, Inc. | Method for low-temperature organic chemical vapor deposition of tungsten nitride, tungsten nitride films and tungsten nitride diffusion barriers for computer interconnect metallization |
JP2003303814A (en) | 2002-04-11 | 2003-10-24 | Matsushita Electric Works Ltd | Plasma treatment apparatus and method therefor |
US6640145B2 (en) | 1999-02-01 | 2003-10-28 | Steven Hoffberg | Media recording device with packet data interface |
US6638839B2 (en) | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
US20030200926A1 (en) | 2002-04-24 | 2003-10-30 | Dando Ross S. | Chemical vapor deposition apparatus |
US20030201541A1 (en) | 2002-04-26 | 2003-10-30 | Younsoo Kim | Method for fabricating metal electrode with atomic layer deposition (ALD) in semiconductor device |
US20030207032A1 (en) | 2002-05-02 | 2003-11-06 | Micron Technology, Inc. | Methods, systems, and apparatus for atomic-layer deposition of aluminum oxides in integrated circuits |
US20030205327A1 (en) | 2002-05-06 | 2003-11-06 | Howald Arthur M. | Apparatus and methods for minimizing arcing in a plasma processing chamber |
US20030205096A1 (en) | 2002-05-03 | 2003-11-06 | Gehner Gerrick S. | Method and apparatus for mixing gases |
US20030205237A1 (en) | 2000-11-20 | 2003-11-06 | Tokyo Electron Limited | Method of cleaning processing chamber of semiconductor processing apparatus |
US20030205202A1 (en) | 1998-01-05 | 2003-11-06 | Kokusai Electric Co., Ltd. | Plasma cvd device |
US6645304B2 (en) | 2000-10-23 | 2003-11-11 | Ngk Insulators, Ltd. | Susceptors for semiconductor-producing apparatuses |
US20030209323A1 (en) | 2002-05-07 | 2003-11-13 | Nec Electronics Corporation | Production apparatus for manufacturing semiconductor device |
US20030209326A1 (en) | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
US20030209746A1 (en) | 2002-05-07 | 2003-11-13 | Hideki Horii | Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention and methods of forming same |
US20030210901A1 (en) | 2002-03-07 | 2003-11-13 | Donald James J. | Pyrometer calibrated wafer temperature estimator |
US6648974B1 (en) | 1999-02-12 | 2003-11-18 | Lpe Spa | Device and method for handling substrates by means of a self-leveling vacuum system in epitaxial induction |
US6649921B1 (en) | 2002-08-19 | 2003-11-18 | Fusion Uv Systems, Inc. | Apparatus and method providing substantially two-dimensionally uniform irradiation |
US20030213562A1 (en) | 2002-05-17 | 2003-11-20 | Applied Materials, Inc. | High density plasma CVD chamber |
US20030215963A1 (en) | 2002-05-17 | 2003-11-20 | Amrhein Fred | Plasma etch resistant coating and process |
US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
US20030213435A1 (en) | 2002-04-11 | 2003-11-20 | Kazuyuki Okuda | Vertical type semiconductor device producing apparatus |
CN2588350Y (en) | 2002-12-26 | 2003-11-26 | 张连合 | Electric thermo-couple |
US20030217915A1 (en) | 2002-05-24 | 2003-11-27 | Luc Ouellet | Fabrication of microstructures with vacuum-sealed cavity |
US20030219972A1 (en) | 2002-05-22 | 2003-11-27 | Green Martin L. | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
US6656281B1 (en) | 1999-06-09 | 2003-12-02 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20030221780A1 (en) | 2002-01-26 | 2003-12-04 | Lei Lawrence C. | Clamshell and small volume chamber with fixed substrate support |
KR20030092305A (en) | 2002-05-29 | 2003-12-06 | 삼성전자주식회사 | A MEAN MEASURING ON A TEMPERATURE OF A CHAMBER's OUTER WALL IN A MACHINE DEPOSITING HTUSG |
US6658933B2 (en) | 2001-06-22 | 2003-12-09 | Clesse Industries | Fill-level indicator for a liquefied-petroleum-gas tank |
US6659111B1 (en) | 1999-01-12 | 2003-12-09 | Central Glass Company, Limited | Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas |
US20030226840A1 (en) | 1997-04-04 | 2003-12-11 | Dalton Robert C. | Electromagnetic susceptors with coatings for artificial dielectric systems and devices |
US20030228772A1 (en) | 2002-06-05 | 2003-12-11 | Cowans Kenneth W. | Lateral temperature equalizing system for large area surfaces during processing |
US6663332B1 (en) | 1998-01-27 | 2003-12-16 | Asm International N.V. | System for the treatment of wafers |
US6662817B2 (en) | 2000-10-04 | 2003-12-16 | Asm Japan K.K. | Gas-line system for semiconductor-manufacturing apparatus |
US20030232511A1 (en) | 2002-06-14 | 2003-12-18 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US20030232138A1 (en) | 2002-06-17 | 2003-12-18 | Marko Tuominen | System for controlling the sublimation of reactants |
US20030232497A1 (en) | 2002-04-16 | 2003-12-18 | Ming Xi | System and method for forming an integrated barrier layer |
US20030230986A1 (en) | 1999-12-13 | 2003-12-18 | Horsky Thomas Neil | Ion implantation ion source, system and method |
US20030231698A1 (en) | 2002-03-29 | 2003-12-18 | Takatomo Yamaguchi | Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus |
US20030232491A1 (en) | 2002-06-18 | 2003-12-18 | Fujitsu Limited | Semiconductor device fabrication method |
US20030234371A1 (en) | 2002-06-19 | 2003-12-25 | Ziegler Byron J. | Device for generating reactive ions |
US20040002224A1 (en) | 2002-06-26 | 2004-01-01 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
US6673196B1 (en) | 1999-09-02 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus |
US20040005147A1 (en) | 2000-07-24 | 2004-01-08 | Wenling Wang | Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system |
US20040005753A1 (en) | 2000-05-15 | 2004-01-08 | Juhana Kostamo | Method of growing electrical conductors |
US6676290B1 (en) | 2002-11-15 | 2004-01-13 | Hsueh-Yu Lu | Electronic clinical thermometer |
US6676759B1 (en) | 1998-10-30 | 2004-01-13 | Applied Materials, Inc. | Wafer support device in semiconductor manufacturing device |
US20040010772A1 (en) | 2001-11-13 | 2004-01-15 | General Electric Company | Interactive method and system for faciliting the development of computer software applications |
JP2004014952A (en) | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | Processing system and processing method |
US20040009679A1 (en) | 2001-01-19 | 2004-01-15 | Yeo Jae-Hyun | Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
US20040009307A1 (en) | 2000-06-08 | 2004-01-15 | Won-Yong Koh | Thin film forming method |
US6679194B2 (en) | 2001-11-08 | 2004-01-20 | Samsung Electronics Co., Ltd. | Cassette table of a semiconductor fabricating apparatus |
US20040013577A1 (en) | 2002-07-17 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for providing gas to a processing chamber |
US20040015300A1 (en) | 2002-07-22 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for monitoring solid precursor delivery |
JP2004023043A (en) | 2002-06-20 | 2004-01-22 | Toshiba Corp | Method and system for deposition and method for manufacturing semiconductor device |
WO2004008491A2 (en) | 2002-07-15 | 2004-01-22 | Aviza Technology, Inc. | Thermal processing system and configurable vertical chamber |
US20040013818A1 (en) | 2002-07-19 | 2004-01-22 | Moon Kwang-Jin | Method of cleaning a chemical vapor deposition chamber |
US20040011504A1 (en) | 2002-07-17 | 2004-01-22 | Ku Vincent W. | Method and apparatus for gas temperature control in a semiconductor processing system |
US6682973B1 (en) | 2002-05-16 | 2004-01-27 | Advanced Micro Devices, Inc. | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications |
US6683274B1 (en) | 2001-11-26 | 2004-01-27 | Junsung Engineering Co., Ltd. | Wafer susceptor |
US6682971B2 (en) | 2000-03-30 | 2004-01-27 | Hitachi Kokusai Electric Inc. | Method of manufacturing a semiconductor |
US20040018304A1 (en) | 2002-07-10 | 2004-01-29 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040016637A1 (en) | 2002-07-24 | 2004-01-29 | Applied Materials, Inc. | Multi-chemistry plating system |
US20040018750A1 (en) | 2002-07-02 | 2004-01-29 | Sophie Auguste J.L. | Method for deposition of nitrogen doped silicon carbide films |
WO2004008827A2 (en) | 2002-07-19 | 2004-01-29 | Aviza Technology, Inc. | Atomic layer deposition of high k dielectric films |
WO2004010467A2 (en) | 2002-07-19 | 2004-01-29 | Aviza Technology, Inc. | Low temperature dielectric deposition using aminosilane and ozone |
US20040018694A1 (en) | 2002-07-08 | 2004-01-29 | Samsung Electronics Co., Ltd. | Methods for forming silicon dioxide layers on substrates using atomic layer deposition |
US20040018307A1 (en) | 2002-07-26 | 2004-01-29 | Park In-Sung | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material |
US20040018723A1 (en) | 2000-06-27 | 2004-01-29 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6686281B2 (en) | 2001-09-05 | 2004-02-03 | Hitachi Kokusai Electric Inc. | Method for fabricating a semiconductor device and a substrate processing apparatus |
US6684659B1 (en) | 1999-05-17 | 2004-02-03 | Matsushita Refrigeration Company | Refrigerator and defrosting heater |
US20040023516A1 (en) | 2001-10-02 | 2004-02-05 | Londergan Ana R. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
US20040023125A1 (en) | 2002-07-30 | 2004-02-05 | Hoya Corporation | Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask |
US6689220B1 (en) | 2000-11-22 | 2004-02-10 | Simplus Systems Corporation | Plasma enhanced pulsed layer deposition |
US6688784B1 (en) | 2000-10-25 | 2004-02-10 | Advanced Micro Devices, Inc. | Parallel plate development with multiple holes in top plate for control of developer flow and pressure |
US20040029052A1 (en) | 2002-08-09 | 2004-02-12 | Samsung Electronics Co., Ltd. | Method of forming fine patterns using silicon oxide layer |
US20040025787A1 (en) | 2002-04-19 | 2004-02-12 | Selbrede Steven C. | System for depositing a film onto a substrate using a low pressure gas precursor |
US20040026372A1 (en) | 1994-04-20 | 2004-02-12 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US20040025786A1 (en) | 2002-04-05 | 2004-02-12 | Tadashi Kontani | Substrate processing apparatus and reaction container |
US6692575B1 (en) | 1998-09-03 | 2004-02-17 | Cvc Products Inc. | Apparatus for supporting a substrate in a reaction chamber |
US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
USD486891S1 (en) | 2003-01-21 | 2004-02-17 | Richard W. Cronce, Jr. | Vent pipe protective cover |
US20040031564A1 (en) | 2000-06-30 | 2004-02-19 | Lam Research Corporation | Switched uniformity control |
US6696367B1 (en) | 2002-09-27 | 2004-02-24 | Asm America, Inc. | System for the improved handling of wafers within a process tool |
US20040037339A1 (en) | 2000-03-06 | 2004-02-26 | Watson Tom A. | Laser discharge chamber passivation by plasma |
US20040038525A1 (en) | 2002-08-26 | 2004-02-26 | Shuang Meng | Enhanced atomic layer deposition |
US20040036129A1 (en) | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US20040035358A1 (en) | 2002-08-23 | 2004-02-26 | Cem Basceri | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US6700089B1 (en) | 1999-03-30 | 2004-03-02 | Tokyo Electron Limited | Plasma processing device, its maintenance method, and its installation method |
US6699399B1 (en) | 1997-11-12 | 2004-03-02 | Applied Materials, Inc | Self-cleaning etch process |
US20040043149A1 (en) | 2000-09-28 | 2004-03-04 | Gordon Roy G. | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
US20040043544A1 (en) | 2002-04-25 | 2004-03-04 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
US20040048439A1 (en) | 2002-08-21 | 2004-03-11 | Ravindra Soman | Method for fabricating a bipolar transistor base |
US20040048452A1 (en) | 2001-01-25 | 2004-03-11 | Takuya Sugawara | Method of producing electronic device material |
US20040050496A1 (en) | 2002-07-18 | 2004-03-18 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus and plasma processing method |
US20040050325A1 (en) | 2002-09-12 | 2004-03-18 | Samoilov Arkadii V. | Apparatus and method for delivering process gas to a substrate processing system |
JP2004088077A (en) | 2002-06-28 | 2004-03-18 | Toshiba Ceramics Co Ltd | Member for processing semiconductor wafer |
US20040052972A1 (en) | 2002-07-03 | 2004-03-18 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6710364B2 (en) | 1999-09-24 | 2004-03-23 | Texas Instruments Incorporated | Semiconductor wafer edge marking |
US6710857B2 (en) | 2000-03-13 | 2004-03-23 | Nikon Corporation | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
JP2004091848A (en) | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | Gaseous raw material supply system for thin film forming apparatus and thin film forming apparatus |
US20040056017A1 (en) | 2002-03-18 | 2004-03-25 | Renken Wayne Glenn | System and method for heating and cooling wafer at accelerated rates |
US20040058517A1 (en) | 2002-09-23 | 2004-03-25 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask |
US6712949B2 (en) | 2001-07-22 | 2004-03-30 | The Electrosynthesis Company, Inc. | Electrochemical synthesis of hydrogen peroxide |
US6713824B1 (en) | 1998-12-15 | 2004-03-30 | Kabushiki Kaisha Toshiba | Reliable semiconductor device and method of manufacturing the same |
US20040063289A1 (en) | 2002-09-30 | 2004-04-01 | Fujitsu Limited | Reduction in source-drain resistance of semiconductor device |
US20040062081A1 (en) | 2002-06-10 | 2004-04-01 | Drewes Joel A. | Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication |
US6716571B2 (en) | 2001-03-28 | 2004-04-06 | Advanced Micro Devices, Inc. | Selective photoresist hardening to facilitate lateral trimming |
US6716477B1 (en) | 1999-10-26 | 2004-04-06 | Tokyo Electron Limited | Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device |
US6715949B1 (en) | 2002-09-20 | 2004-04-06 | Eastman Kodak Company | Medium-handling in printer for donor and receiver mediums |
US20040065255A1 (en) | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US6720531B1 (en) | 2002-12-11 | 2004-04-13 | Asm America, Inc. | Light scattering process chamber walls |
US6720262B2 (en) | 1999-12-15 | 2004-04-13 | Genitech, Inc. | Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst |
US6719499B1 (en) | 1999-01-13 | 2004-04-13 | Asm International N.V. | Device for positioning a wafer |
US20040069226A1 (en) | 2002-10-09 | 2004-04-15 | Tokyo Electron Limited | Substrate processing method and substrate processing system |
US20040071897A1 (en) | 2002-10-11 | 2004-04-15 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
JP2004113270A (en) | 2002-09-24 | 2004-04-15 | Pegasus Net Kk | Earhole type saw clinical thermometer and body temperature management system based on the clinical thermometer |
US6723642B1 (en) | 2002-10-22 | 2004-04-20 | Electronics And Telecommunications Research Institute | Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition |
US6722837B2 (en) | 2001-08-31 | 2004-04-20 | Daifuku Co., Ltd. | Load storage equipment |
JP2004128019A (en) | 2002-09-30 | 2004-04-22 | Applied Materials Inc | Method and apparatus for plasma processing |
US20040079960A1 (en) | 1994-08-22 | 2004-04-29 | Rohm Co., Ltd. | Semiconductor light emitting device and method for producing the same |
US20040079286A1 (en) | 2002-07-12 | 2004-04-29 | Sven Lindfors | Method and apparatus for the pulse-wise supply of a vaporized liquid reactant |
US20040082171A1 (en) | 2002-09-17 | 2004-04-29 | Shin Cheol Ho | ALD apparatus and ALD method for manufacturing semiconductor device |
US20040080697A1 (en) | 1998-05-16 | 2004-04-29 | Song Jang-Kun | Liquid crystal displays having multi-domains and a manufacturing method thereof |
JP2004134553A (en) | 2002-10-10 | 2004-04-30 | Sony Corp | Process for forming resist pattern and process for fabricating semiconductor device |
US6730614B1 (en) | 2002-11-29 | 2004-05-04 | Electronics And Telecommunications Research Institute | Method of forming a thin film in a semiconductor device |
US20040083975A1 (en) | 2002-09-20 | 2004-05-06 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US20040087141A1 (en) | 2002-10-30 | 2004-05-06 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
US20040083964A1 (en) | 2002-09-19 | 2004-05-06 | Applied Materials, Inc. | Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
US20040083961A1 (en) | 2002-08-15 | 2004-05-06 | Cem Basceri | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
US20040083962A1 (en) | 2002-08-15 | 2004-05-06 | Applied Materials, Inc. | Clog-resistant gas delivery system |
US6734090B2 (en) | 2002-02-20 | 2004-05-11 | International Business Machines Corporation | Method of making an edge seal for a semiconductor device |
US6734631B2 (en) | 2001-06-20 | 2004-05-11 | Koninklijke Philips Electronics N.V. | Low-pressure gas discharge lamp with phosphor coating |
US20040092073A1 (en) | 2002-11-08 | 2004-05-13 | Cyril Cabral | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures |
US20040092120A1 (en) | 1999-12-22 | 2004-05-13 | Wicker Thomas E. | Semiconductor processing equipment having improved process drift control |
US20040089236A1 (en) | 2002-06-28 | 2004-05-13 | Toshiba Ceramics Co., Ltd. | Semiconductor wafer treatment member |
US6737716B1 (en) | 1999-01-29 | 2004-05-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20040094206A1 (en) | 2002-11-15 | 2004-05-20 | Renesas Technology Corp. | Semiconductor manufacturing apparatus enabling inspection of mass flow controller maintaining connection thereto |
US20040095074A1 (en) | 2001-01-18 | 2004-05-20 | Nobuo Ishii | Plasma device and plasma generating method |
US20040094402A1 (en) | 2002-08-01 | 2004-05-20 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
US6740853B1 (en) | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
US20040101622A1 (en) | 2002-11-20 | 2004-05-27 | Park Young Hoon | Method of depositing thin film using aluminum oxide |
US20040099213A1 (en) | 2000-07-24 | 2004-05-27 | Adomaitis Raymond A | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
US20040099635A1 (en) | 2001-02-15 | 2004-05-27 | Tokyo Electron Limited | Method and apparatus for processing workpiece |
US6743475B2 (en) | 2000-10-23 | 2004-06-01 | Asm International N.V. | Process for producing aluminum oxide films at low temperatures |
US6745095B1 (en) | 2000-10-04 | 2004-06-01 | Applied Materials, Inc. | Detection of process endpoint through monitoring fluctuation of output data |
US6743738B2 (en) | 2001-02-12 | 2004-06-01 | Asm America, Inc. | Dopant precursors and processes |
US20040103914A1 (en) | 2002-12-02 | 2004-06-03 | Au Optronics Corp. | Method for cleaning a plasma chamber |
US20040104439A1 (en) | 2002-12-03 | 2004-06-03 | Asm International N.V. | Method of depositing barrier layer from metal gates |
US20040105738A1 (en) | 2002-11-29 | 2004-06-03 | Ahn Yo-Han | Substrate processing apparatus and method of processing substrate while controlling for contamination in substrate transfer module |
US20040106249A1 (en) | 2002-12-03 | 2004-06-03 | Hannu Huotari | Method to fabricate dual metal CMOS devices |
US6746240B2 (en) | 2002-03-15 | 2004-06-08 | Asm International N.V. | Process tube support sleeve with circumferential channels |
US6746308B1 (en) | 2001-07-11 | 2004-06-08 | Advanced Micro Devices, Inc. | Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same |
JP2004163293A (en) | 2002-11-14 | 2004-06-10 | Iwatani Internatl Corp | Method and apparatus for measuring ozone gas concentration |
US6749671B2 (en) | 1999-10-18 | 2004-06-15 | Advanced Technology Materials, Inc. | Abatement of effluents from chemical vapor deposition processes using organometallic source reagents |
US20040112288A1 (en) | 2002-12-13 | 2004-06-17 | Whitesell Christopher S. | Gas injectors for a vertical furnace used in semiconductor processing |
US6753507B2 (en) | 2001-04-27 | 2004-06-22 | Kyocera Corporation | Wafer heating apparatus |
US20040118342A1 (en) | 2002-12-18 | 2004-06-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bypass gas feed system and method to improve reactant gas flow and film deposition |
US6755221B2 (en) | 2001-02-22 | 2004-06-29 | Samsung Electronics Co., Ltd. | Load port of a semiconductor manufacturing apparatus having integrated kinematic coupling pins and sensors, and method of loading wafers using the same |
US6756293B2 (en) | 1999-07-16 | 2004-06-29 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
US6756085B2 (en) | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
US20040126213A1 (en) | 2001-05-18 | 2004-07-01 | Arthur Pelzmann | Device for accommodating disk-shaped objects and apparatus for handling objects |
US20040127069A1 (en) | 1995-09-08 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. A Japan Corporation | Method and apparatus for manufacturing a semiconductor device |
US20040126929A1 (en) | 2002-12-30 | 2004-07-01 | Novellus Systems, Inc. | Silicon carbide having low dielectric constant |
US20040126990A1 (en) | 2002-12-26 | 2004-07-01 | Fujitsu Limited | Semiconductor device having STI without divot its manufacture |
US20040124549A1 (en) | 2002-09-16 | 2004-07-01 | Curran William J. | Liquid vapor delivery system and method of maintaining a constant level of fluid therein |
US20040124131A1 (en) | 2002-09-11 | 2004-07-01 | Aitchison Bradley J. | Precursor material delivery system for atomic layer deposition |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US20040129671A1 (en) | 2002-07-18 | 2004-07-08 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US20040129211A1 (en) | 2003-01-07 | 2004-07-08 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
US6760981B2 (en) | 2002-01-18 | 2004-07-13 | Speedline Technologies, Inc. | Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation |
US20040137756A1 (en) | 2003-01-13 | 2004-07-15 | Applied Materials, Inc. | Method of improving stability in low k barrier layers |
US20040134429A1 (en) | 1999-01-22 | 2004-07-15 | Hideo Yamanaka | Film forming method and film forming apparatus |
US20040142577A1 (en) | 2001-01-22 | 2004-07-22 | Takuya Sugawara | Method for producing material of electronic device |
US6767447B2 (en) | 2001-04-18 | 2004-07-27 | Premelec Electrode Ltd. | Electrolytic cell for hydrogen peroxide production and process for producing hydrogen peroxide |
US6766545B2 (en) | 2002-02-27 | 2004-07-27 | B. Eugene Hodges | Shower drain |
US20040144323A1 (en) | 2002-07-29 | 2004-07-29 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Epitaxial wafer production apparatus and susceptor structure |
US20040144980A1 (en) | 2003-01-27 | 2004-07-29 | Ahn Kie Y. | Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers |
US20040146644A1 (en) | 2003-01-23 | 2004-07-29 | Manchao Xiao | Precursors for depositing silicon containing films and processes thereof |
US20040144311A1 (en) | 2002-11-14 | 2004-07-29 | Ling Chen | Apparatus and method for hybrid chemical processing |
US20040151844A1 (en) | 2003-02-04 | 2004-08-05 | Zhihong Zhang | Method to plasma deposit on organic polymer dielectric film |
US20040151845A1 (en) | 2003-02-04 | 2004-08-05 | Tue Nguyen | Nanolayer deposition process |
US20040152287A1 (en) | 2003-01-31 | 2004-08-05 | Sherrill Adrian B. | Deposition of a silicon film |
US20040154746A1 (en) | 2003-02-05 | 2004-08-12 | Park Jun-Sig | Apparatus and method for producing a semiconductor device including a byproduct control system |
US6776849B2 (en) | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
USD494552S1 (en) | 2002-12-12 | 2004-08-17 | Tokyo Electron Limited | Exhaust ring for manufacturing semiconductors |
US20040159343A1 (en) | 2002-07-26 | 2004-08-19 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US20040163590A1 (en) | 2003-02-24 | 2004-08-26 | Applied Materials, Inc. | In-situ health check of liquid injection vaporizer |
US6783875B2 (en) | 2000-04-18 | 2004-08-31 | Ngk Insulators, Ltd. | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US6784108B1 (en) | 2000-08-31 | 2004-08-31 | Micron Technology, Inc. | Gas pulsing for etch profile control |
US20040168769A1 (en) | 2002-05-10 | 2004-09-02 | Takaaki Matsuoka | Plasma processing equipment and plasma processing method |
US20040168742A1 (en) | 2003-02-12 | 2004-09-02 | Kim Hyun-Joon | Module for transferring a substrate |
US20040169032A1 (en) | 2003-02-27 | 2004-09-02 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
US20040168627A1 (en) | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Atomic layer deposition of oxide film |
JP2004244298A (en) | 2002-12-17 | 2004-09-02 | Kobe Steel Ltd | Substrate holder for vapor-phase diamond synthesis and method of vapor-phase diamond synthesis |
JP2004244661A (en) | 2003-02-12 | 2004-09-02 | Denso Corp | Method of producing thin film |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
USD496008S1 (en) | 2002-12-12 | 2004-09-14 | Tokyo Electron Limited | Exhaust ring for manufacturing semiconductors |
US20040187928A1 (en) | 2002-01-04 | 2004-09-30 | Jesse Ambrosina | Mass flow ratio system and method |
US20040187784A1 (en) | 2003-03-28 | 2004-09-30 | Fluens Corporation | Continuous flow deposition system |
US20040187304A1 (en) | 2003-01-07 | 2004-09-30 | Applied Materials, Inc. | Enhancement of Cu line reliability using thin ALD TaN film to cap the Cu line |
US20040187790A1 (en) | 2002-12-30 | 2004-09-30 | Osram Opto Semiconductors Gmbh | Substrate holder |
US20040187777A1 (en) | 2003-03-24 | 2004-09-30 | Renesas Technology Corp. | CVD apparatus |
US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US20040203251A1 (en) | 2003-02-14 | 2004-10-14 | Kawaguchi Mark N. | Method and apparatus for removing a halogen-containing residue |
US20040200499A1 (en) | 2003-04-11 | 2004-10-14 | Applied Materials, Inc. | Backflush chamber clean |
US20040202786A1 (en) | 2001-05-22 | 2004-10-14 | Novellus Systems, Inc. | Method of forming low-resistivity tungsten interconnects |
US20040206305A1 (en) | 2003-04-16 | 2004-10-21 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US20040209477A1 (en) | 2003-04-18 | 2004-10-21 | Applied Materials, Inc. | Methods for substrate orientation |
JP2004294638A (en) | 2003-03-26 | 2004-10-21 | Tokyo Ohka Kogyo Co Ltd | Negative resist material and method for forming resist pattern |
US20040208228A1 (en) | 2002-10-08 | 2004-10-21 | Sumitomo Electric Industries, Ltd. | Temperature gauge and ceramic susceptor in which it is utilized |
USD497536S1 (en) | 2003-01-28 | 2004-10-26 | Bridgestone Corporation | Rubber vibration insulator |
US20040212947A1 (en) | 2003-04-22 | 2004-10-28 | Applied Materials, Inc. | Substrate support having heat transfer system |
US20040213921A1 (en) | 2003-04-23 | 2004-10-28 | Taiwan Semiconductor Manufacturing Co. | Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up |
US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
US20040214445A1 (en) | 2001-07-10 | 2004-10-28 | Akitaka Shimizu | Dry etching method |
US20040214399A1 (en) | 2003-04-22 | 2004-10-28 | Micron Technology, Inc. | Atomic layer deposited ZrTiO4 films |
US6812157B1 (en) | 1999-06-24 | 2004-11-02 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
USD497977S1 (en) | 2003-01-22 | 2004-11-02 | Tour & Andersson Ab | Sealing ring membrane |
US20040220699A1 (en) | 2003-04-29 | 2004-11-04 | Heden Craig R | Host and ancillary tool interface methodology for distributed processing |
JP2004310019A (en) | 2003-03-24 | 2004-11-04 | Shin Etsu Chem Co Ltd | Antireflection film material, substrate having antireflection film and method for forming pattern |
US20040217217A1 (en) | 2003-04-09 | 2004-11-04 | Samsung Electronics Co., Ltd. | Gas supplying apparatus |
US20040219793A1 (en) | 2000-12-05 | 2004-11-04 | Shingo Hishiya | Method and apparatus for treating article to be treated |
US6815350B2 (en) | 2002-03-05 | 2004-11-09 | Samsung Electronics Co., Ltd. | Method for forming a thin film using an atomic layer deposition (ALD) process |
US6815352B1 (en) | 1999-11-09 | 2004-11-09 | Shin-Etsu Chemical Co., Ltd. | Silicon focus ring and method for producing the same |
US20040221808A1 (en) | 2003-05-09 | 2004-11-11 | Asm Japan K.K. | Thin-film deposition apparatus |
US20040223893A1 (en) | 2003-05-09 | 2004-11-11 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Ozone generator |
US20040224478A1 (en) | 2003-05-08 | 2004-11-11 | International Business Machines Corporation | Sacrificial collar method for improved deep trench processing |
US20040221807A1 (en) | 2003-05-09 | 2004-11-11 | Mohith Verghese | Reactor surface passivation through chemical deactivation |
US6818864B2 (en) | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
US6818566B2 (en) | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
US20040226507A1 (en) | 2003-04-24 | 2004-11-18 | Carpenter Craig M. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US20040226515A1 (en) | 2003-05-16 | 2004-11-18 | Applied Materials, Inc. | Heat transfer assembly |
US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
US20040231600A1 (en) | 2003-04-28 | 2004-11-25 | Lee Kyu Ok | Wafer carrier locking device |
US20040231799A1 (en) | 2001-08-06 | 2004-11-25 | Lee Chun Soo | Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof |
US6825134B2 (en) | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
US6824665B2 (en) | 2000-10-25 | 2004-11-30 | Shipley Company, L.L.C. | Seed layer deposition |
US6825106B1 (en) | 2003-09-30 | 2004-11-30 | Sharp Laboratories Of America, Inc. | Method of depositing a conductive niobium monoxide film for MOSFET gates |
US20040241998A1 (en) | 1999-01-22 | 2004-12-02 | Hanson Kyle M. | System for processing a workpiece |
US20040238523A1 (en) | 2002-06-05 | 2004-12-02 | Akira Kuibira | Heater module for semiconductor production system |
US20040241341A1 (en) | 2003-05-07 | 2004-12-02 | Hui-Chu Lin | Method for forming silicon oxide layer |
US6827789B2 (en) | 2002-07-01 | 2004-12-07 | Semigear, Inc. | Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry |
US6828235B2 (en) | 2000-03-29 | 2004-12-07 | Hitachi Kokusai Electric Inc. | Semiconductor manufacturing method, substrate processing method, and semiconductor manufacturing apparatus |
US20040245091A1 (en) | 2003-06-04 | 2004-12-09 | Applied Materials, Inc. | Hdp-cvd multistep gapfill process |
WO2004106584A1 (en) | 2003-05-27 | 2004-12-09 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
US20040247779A1 (en) | 2003-06-05 | 2004-12-09 | Venkat Selvamanickam | Ultraviolet (UV) and plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
USD499620S1 (en) | 2002-09-04 | 2004-12-14 | Thermal Dynamics Corporation | Plasma arc torch tip with secondary holes |
US20040250600A1 (en) | 2003-05-12 | 2004-12-16 | Bevers William Daniel | Method of mass flow control flow verification and calibration |
US20040253790A1 (en) | 2003-06-10 | 2004-12-16 | Semiconductor Leading Edge Technologies, Inc. | Method for manufacturing semiconductor device |
US20040253867A1 (en) | 2001-11-05 | 2004-12-16 | Shuzo Matsumoto | Circuit part connector structure and gasket |
US6835039B2 (en) | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
US20040261492A1 (en) | 2003-06-25 | 2004-12-30 | Kaveh Zarkar | System and method for in-situ flow verification and calibration |
US20040261706A1 (en) | 2000-04-14 | 2004-12-30 | Sven Lindfors | Method of growing a thin film onto a substrate |
US20040266011A1 (en) | 2003-06-26 | 2004-12-30 | Samsung Electronics Co., Ltd. | In-situ analysis method for atomic layer deposition process |
US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
US20040261712A1 (en) | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
US20050001062A1 (en) | 2003-03-24 | 2005-01-06 | Mccracken Thomas William | Mixing arrangement for atomizing nozzle in multi-phase flow |
US20050003662A1 (en) | 2003-06-05 | 2005-01-06 | Jursich Gregory M. | Methods for forming aluminum containing films utilizing amino aluminum precursors |
US20050003600A1 (en) | 2001-08-01 | 2005-01-06 | Shigeru Kasai | Gas treating device and gas treating method |
US20050000428A1 (en) | 2003-05-16 | 2005-01-06 | Shero Eric J. | Method and apparatus for vaporizing and delivering reactant |
US20050003089A1 (en) | 2003-07-04 | 2005-01-06 | Won Seok-Jun | Method of forming a carbon nano-material layer using a cyclic deposition technique |
US6841201B2 (en) | 2001-12-21 | 2005-01-11 | The Procter & Gamble Company | Apparatus and method for treating a workpiece using plasma generated from microwave radiation |
CN1563483A (en) | 2004-04-01 | 2005-01-12 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
US20050008799A1 (en) | 2003-07-08 | 2005-01-13 | Shizuo Tomiyasu | Solid organometallic compound-filled container and filling method thereof |
US20050009325A1 (en) | 2003-06-18 | 2005-01-13 | Hua Chung | Atomic layer deposition of barrier materials |
US20050006682A1 (en) | 2003-07-10 | 2005-01-13 | Jun-Soo Bae | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same |
US6843202B2 (en) | 2002-07-19 | 2005-01-18 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus for substrate employing photoirradiation |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US6846515B2 (en) | 2002-04-17 | 2005-01-25 | Air Products And Chemicals, Inc. | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants |
US6846146B2 (en) | 2001-08-31 | 2005-01-25 | Daifuku Co., Ltd. | Load storage equipment |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US20050016956A1 (en) | 2003-03-14 | 2005-01-27 | Xinye Liu | Methods and apparatus for cycle time improvements for atomic layer deposition |
US20050016452A1 (en) | 2003-07-22 | 2005-01-27 | Samsung Electronics Co., Ltd. | Gas supply unit and semiconductor device manufacturing apparatus using the same |
US20050017272A1 (en) | 2001-11-30 | 2005-01-27 | Kenya Yamashita | Semiconductor device and production method therefor |
US20050019494A1 (en) | 2003-07-25 | 2005-01-27 | Applied Materials, Inc., A Delaware Corporation | Sequential gas flow oxide deposition technique |
US20050016470A1 (en) | 2003-07-25 | 2005-01-27 | Tae-Soo Kang | Susceptor and deposition apparatus including the same |
US20050020071A1 (en) | 2001-07-31 | 2005-01-27 | Jun Sonobe | Method and apparatus for cleaning and method and apparatus for etching |
US20050019960A1 (en) | 2003-07-25 | 2005-01-27 | Moon-Sook Lee | Method and apparatus for forming a ferroelectric layer |
US20050019026A1 (en) | 2003-07-23 | 2005-01-27 | Luping Wang | Delivery systems for efficient vaporization of precursor source material |
US6849857B2 (en) | 2001-03-26 | 2005-02-01 | Ebara Corporation | Beam processing apparatus |
US6849241B2 (en) | 2000-02-04 | 2005-02-01 | Aixtron Ag. | Device and method for depositing one or more layers on a substrate |
US20050026402A1 (en) | 2001-12-21 | 2005-02-03 | Holger Jurgensen | Method and device for depositing crystalline layers on crystalline substrates |
US20050023231A1 (en) | 2003-08-01 | 2005-02-03 | Chui-Kai Huang | Substrate supporting rod and substrate cassette using the same |
JP2005033221A (en) | 2001-02-08 | 2005-02-03 | Tokyo Electron Ltd | Substrate mounting stand and processor |
US20050023624A1 (en) | 2002-06-05 | 2005-02-03 | Micron Technology, Inc. | Atomic layer-deposited HfAlO3 films for gate dielectrics |
US20050033075A1 (en) | 2001-11-09 | 2005-02-10 | Yun Chi | Volatile noble metal organometallic complexes |
US6854580B2 (en) | 2003-02-06 | 2005-02-15 | Borgwarner, Inc. | Torsional damper having variable bypass clutch with centrifugal release mechanism |
US20050037578A1 (en) | 2003-08-14 | 2005-02-17 | Wei Wen Chen | [method for forming an oxide/ nitride/oxide stacked layer] |
US20050034664A1 (en) | 2001-11-08 | 2005-02-17 | Koh Won Yong | Apparatus for depositing |
US20050034674A1 (en) | 2002-03-29 | 2005-02-17 | Tokyo Electron Limited | Processing apparatus for object to be processed and processing method using same |
US20050037154A1 (en) | 2001-11-08 | 2005-02-17 | Koh Won Yong | Method for forming thin film |
US20050037610A1 (en) | 2003-08-14 | 2005-02-17 | Yong-Won Cha | Methods of filling trenches using high-density plasma deposition (HDP) |
US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US20050042778A1 (en) | 2003-06-26 | 2005-02-24 | Infineon Technologies Ag | System and method for determining the temperature of a semiconductor wafer |
US20050040144A1 (en) | 2003-08-18 | 2005-02-24 | Eni Technology, Inc. | Control of plasma transitions in sputter processing systems |
US6861642B2 (en) | 2001-03-26 | 2005-03-01 | Ebara Corporation | Neutral particle beam processing apparatus |
US20050048797A1 (en) | 2003-09-03 | 2005-03-03 | Asm Japan K.K/ | Method of forming thin film |
US20050046825A1 (en) | 2003-07-25 | 2005-03-03 | Lightwind Corporation | Method and apparatus for chemical monitoring |
US6863281B2 (en) | 2001-09-13 | 2005-03-08 | Sumitomo Osaka Cement Co., Ltd. | Chucking apparatus and production method for the same |
US6864041B2 (en) | 2001-05-02 | 2005-03-08 | International Business Machines Corporation | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching |
JP2005507030A (en) | 2001-10-26 | 2005-03-10 | アプライド マテリアルズ インコーポレイテッド | Gas delivery device for atomic layer deposition |
US20050054198A1 (en) | 2001-11-05 | 2005-03-10 | Um Pyung Yong | Apparatus of chemical vapor deposition |
US20050051854A1 (en) | 2003-09-09 | 2005-03-10 | International Business Machines Corporation | Structure and method for metal replacement gate of high performance |
US20050051093A1 (en) | 2003-09-08 | 2005-03-10 | Akitaka Makino | Vacuum processing apparatus |
US20050054228A1 (en) | 2003-05-01 | 2005-03-10 | March David Martin | Mid-line connector and method for pipe-in-pipe electrical heating |
US20050054175A1 (en) | 2003-07-23 | 2005-03-10 | Matthias Bauer | Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates |
US6867153B2 (en) | 2003-01-31 | 2005-03-15 | Trecenti Technologies, Inc. | Method of purging wafer receiving jig, wafer transfer device, and method of manufacturing semiconductor device |
US6867859B1 (en) | 1999-08-03 | 2005-03-15 | Lightwind Corporation | Inductively coupled plasma spectrometer for process diagnostics and control |
US6867086B1 (en) | 2003-03-13 | 2005-03-15 | Novellus Systems, Inc. | Multi-step deposition and etch back gap fill process |
US20050059262A1 (en) | 2003-09-12 | 2005-03-17 | Zhiping Yin | Transparent amorphous carbon structure in semiconductor devices |
US20050059261A1 (en) | 2003-09-17 | 2005-03-17 | Cem Basceri | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US20050059264A1 (en) | 1998-09-29 | 2005-03-17 | David Cheung | CVD plasma assisted low dielectric constant films |
US20050056780A1 (en) | 2003-09-17 | 2005-03-17 | Sionex Corporation | Solid-state gas flow generator and related systems, applications, and methods |
US20050056218A1 (en) | 2002-02-14 | 2005-03-17 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
US20050063451A1 (en) | 2002-02-28 | 2005-03-24 | Shin-Etsu Handotai Co., Ltd | Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device |
JP2005079254A (en) | 2003-08-29 | 2005-03-24 | Mitsubishi Heavy Ind Ltd | Deposition method of silicon nitride film |
US20050064719A1 (en) | 2003-09-19 | 2005-03-24 | Applied Materials, Inc. | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition |
US20050062773A1 (en) | 2001-07-20 | 2005-03-24 | Gemplus | Pressure regulation by transfer of a calibrated gas volume |
US20050064207A1 (en) | 2003-04-21 | 2005-03-24 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
US20050061964A1 (en) | 2003-09-22 | 2005-03-24 | Hitachi., Ltd. | Apparatus for detecting chemical substances and method therefor |
US20050070123A1 (en) | 2003-08-27 | 2005-03-31 | Tomoyuki Hirano | Method for forming a thin film and method for fabricating a semiconductor device |
US20050066893A1 (en) | 2003-09-29 | 2005-03-31 | Soininen Pekka T. | Safe liquid source containers |
US20050069651A1 (en) | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Plasma processing system |
US20050070729A1 (en) | 2003-09-25 | 2005-03-31 | Ayumu Kiyomori | Processes of making gamma,delta-unsaturated carboxylic acid and silyl ester thereof, carboxyl group-containing organosilicon compound and process of making |
US6874480B1 (en) | 2000-07-03 | 2005-04-05 | Combustion Dynamics Corp. | Flow meter |
US6876017B2 (en) | 2003-02-08 | 2005-04-05 | Intel Corporation | Polymer sacrificial light absorbing structure and method |
US6875677B1 (en) | 2003-09-30 | 2005-04-05 | Sharp Laboratories Of America, Inc. | Method to control the interfacial layer for deposition of high dielectric constant films |
US6875477B2 (en) | 2003-02-04 | 2005-04-05 | Hitachi High-Technologies Corporation | Method for coating internal surface of plasma processing chamber |
US6876191B2 (en) | 2002-02-25 | 2005-04-05 | Asm International N.V. | Apparatus for treating wafers, provided with a sensor box |
US6874247B1 (en) | 2004-10-12 | 2005-04-05 | Tsang-Hung Hsu | Toothbrush dryer |
US20050072357A1 (en) | 2002-07-30 | 2005-04-07 | Shero Eric J. | Sublimation bed employing carrier gas guidance structures |
US20050074983A1 (en) | 2002-03-26 | 2005-04-07 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method, high speed rotary valve, and cleaning method |
US20050074576A1 (en) | 2003-10-03 | 2005-04-07 | Alison Chaiken | Capping layer for enhanced performance media |
US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US20050079124A1 (en) | 2003-08-06 | 2005-04-14 | Sanderson William D. | Apparatus and method for producing chlorine dioxide |
US20050079691A1 (en) | 2003-10-10 | 2005-04-14 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US20050081786A1 (en) | 2003-10-15 | 2005-04-21 | Kubista David J. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US20050085090A1 (en) | 2003-10-21 | 2005-04-21 | Applied Materials, Inc. | Method for controlling accuracy and repeatability of an etch process |
US6884295B2 (en) | 2000-05-29 | 2005-04-26 | Tokyo Electron Limited | Method of forming oxynitride film or the like and system for carrying out the same |
US6883733B1 (en) | 2002-03-28 | 2005-04-26 | Novellus Systems, Inc. | Tapered post, showerhead design to improve mixing on dual plenum showerheads |
US6884066B2 (en) | 2002-09-10 | 2005-04-26 | Fsi International, Inc. | Thermal process station with heated lid |
US6884319B2 (en) | 2001-11-12 | 2005-04-26 | Jusung Engineering Co., Ltd. | Susceptor of apparatus for manufacturing semiconductor device |
US20050090123A1 (en) | 2001-06-08 | 2005-04-28 | Kazuaki Nishimura | Thin film forming apparatus cleaning method |
US6889211B1 (en) | 1999-07-28 | 2005-05-03 | Hitachi, Ltd. | Method and system for distributing multimedia data with management information |
US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050095770A1 (en) | 2002-01-15 | 2005-05-05 | Takeshi Kumagai | Cvd method and device for forming silicon-containing insulation film |
US20050092439A1 (en) | 2003-10-29 | 2005-05-05 | Keeton Tony J. | Low/high temperature substrate holder to reduce edge rolloff and backside damage |
US20050092247A1 (en) | 2003-08-29 | 2005-05-05 | Schmidt Ryan M. | Gas mixer and manifold assembly for ALD reactor |
US20050092733A1 (en) | 2000-08-30 | 2005-05-05 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing and inspecting equipment |
US20050095779A1 (en) | 2003-10-29 | 2005-05-05 | Park Je-Min | Methods for forming resistors for integrated circuit devices |
US6890596B2 (en) | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US20050100669A1 (en) | 2003-11-12 | 2005-05-12 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
US20050101843A1 (en) | 2003-11-06 | 2005-05-12 | Welch Allyn, Inc. | Wireless disposable physiological sensor |
US20050098107A1 (en) | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
US20050101154A1 (en) | 1999-06-18 | 2005-05-12 | Judy Huang | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6895158B2 (en) | 2002-12-09 | 2005-05-17 | Eastman Kodak Company | Waveguide and method of smoothing optical surfaces |
US20050106893A1 (en) | 2003-08-04 | 2005-05-19 | Glen Wilk | Surface preparation prior to deposition on germanium |
US20050107627A1 (en) | 2001-11-30 | 2005-05-19 | Christian Dussarrat | Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof |
US20050106762A1 (en) | 2003-09-03 | 2005-05-19 | Nirupama Chakrapani | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics |
US20050109461A1 (en) | 2001-05-24 | 2005-05-26 | Sheng Sun | Chamber cleaning via rapid thermal process during a cleaning period |
US20050110069A1 (en) | 2003-11-22 | 2005-05-26 | Hynix Semiconductor Inc. | Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same |
US20050112282A1 (en) | 2002-03-28 | 2005-05-26 | President And Fellows Of Harvard College | Vapor deposition of silicon dioxide nanolaminates |
USD505590S1 (en) | 2003-05-22 | 2005-05-31 | Kraft Foods Holdings, Inc. | Susceptor tray |
US6899507B2 (en) | 2002-02-08 | 2005-05-31 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
US20050118837A1 (en) | 2002-07-19 | 2005-06-02 | Todd Michael A. | Method to form ultra high quality silicon-containing compound layers |
US20050115946A1 (en) | 2003-12-02 | 2005-06-02 | Shim Kyu H. | Radical assisted oxidation apparatus |
US6902395B2 (en) | 2002-03-15 | 2005-06-07 | Asm International, N.V. | Multilevel pedestal for furnace |
US6902647B2 (en) | 2002-08-29 | 2005-06-07 | Asm International N.V. | Method of processing substrates with integrated weighing steps |
US20050120805A1 (en) | 2003-12-04 | 2005-06-09 | John Lane | Method and apparatus for substrate temperature control |
US20050121145A1 (en) | 2003-09-25 | 2005-06-09 | Du Bois Dale R. | Thermal processing system with cross flow injection system with rotatable injectors |
US20050123690A1 (en) | 2003-12-09 | 2005-06-09 | Derderian Garo J. | Atomic layer deposition method of depositing an oxide on a substrate |
KR20050054122A (en) | 2003-12-04 | 2005-06-10 | 성명모 | Method of fabricating thin film using uv-enhanced atomic layer deposition |
US20050130427A1 (en) | 2003-12-11 | 2005-06-16 | Samsung Electronics Co., Ltd. | Method of forming thin film for improved productivity |
US20050132957A1 (en) | 2003-12-22 | 2005-06-23 | Seco Tools Ab | Carrier body and method |
US20050133160A1 (en) | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
US20050133161A1 (en) | 2002-07-08 | 2005-06-23 | Carpenter Craig M. | Apparatus and method for depositing materials onto microelectronic workpieces |
US20050136188A1 (en) | 2003-12-18 | 2005-06-23 | Chris Chang | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
US20050133166A1 (en) | 2003-12-19 | 2005-06-23 | Applied Materials, Inc. | Tuned potential pedestal for mask etch processing apparatus |
US20050136657A1 (en) | 2002-07-12 | 2005-06-23 | Tokyo Electron Limited | Film-formation method for semiconductor process |
US20050141591A1 (en) | 2002-03-20 | 2005-06-30 | Kazuhito Sakano | Temperature measuring device and temperature measuring method |
US20050142361A1 (en) | 2003-12-04 | 2005-06-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Amorphous carbon, amorphous-carbon coated member, and process for forming amorphous carbon film |
JP2005172489A (en) | 2003-12-09 | 2005-06-30 | Tokyo Yogyo Co Ltd | Temperature measuring probe for molten metal |
US6913152B2 (en) | 2000-12-04 | 2005-07-05 | Peter Zuk, Jr. | Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples |
US6913796B2 (en) | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
US20050148162A1 (en) | 2004-01-02 | 2005-07-07 | Huajie Chen | Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases |
US6917755B2 (en) | 2003-02-27 | 2005-07-12 | Applied Materials, Inc. | Substrate support |
US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
US20050153573A1 (en) | 2004-01-14 | 2005-07-14 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
US20050150601A1 (en) | 2004-01-12 | 2005-07-14 | Srivastava Aseem K. | Gas distribution plate assembly for plasma reactors |
US20050151184A1 (en) | 2001-02-02 | 2005-07-14 | Lee Jong-Ho | Dielectric layer for semiconductor device and method of manufacturing the same |
US20050161434A1 (en) | 2002-03-29 | 2005-07-28 | Tokyo Electron Limited | Method for forming insulation film |
US20050164469A1 (en) | 2004-01-28 | 2005-07-28 | Infineon Technologies North America Corp. | Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches |
US20050160987A1 (en) | 2002-10-07 | 2005-07-28 | Tokyo Electron Limited | Plasma processing apparatus |
US6924078B2 (en) | 2001-08-24 | 2005-08-02 | Hynix Semiconductor Inc. | Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion |
US20050170306A1 (en) | 2004-01-21 | 2005-08-04 | Maria Oosterlaken Theodorus G. | Method and apparatus for purging seals in a thermal reactor |
US20050172895A1 (en) | 2003-03-03 | 2005-08-11 | Seiko Epson Corporation | MOCVD apparatus and MOCVD method |
US20050175789A1 (en) | 2002-06-23 | 2005-08-11 | Helms Jr Aubrey L. | Method for energy-assisted atomic layer deposition and removal |
US20050173003A1 (en) | 2002-07-19 | 2005-08-11 | Mykrolis Corporation | Liquid flow controller and precision dispense apparatus and system |
US6930059B2 (en) | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
US6930041B2 (en) | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
CN1655362A (en) | 2004-01-29 | 2005-08-17 | 三星电子株式会社 | Dielectric layer for semiconductor device and method of manufacturing the same |
US20050181555A1 (en) | 2000-03-07 | 2005-08-18 | Haukka Suvi P. | Thin films |
US20050178333A1 (en) | 2004-02-18 | 2005-08-18 | Asm Japan K.K. | System and method of CVD chamber cleaning |
US20050181535A1 (en) | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
US20050183827A1 (en) | 2004-02-24 | 2005-08-25 | Applied Materials, Inc. | Showerhead mounting to accommodate thermal expansion |
US6935269B2 (en) | 2000-05-02 | 2005-08-30 | Sem Technology Co., Ltd. | Apparatus for treating the surface with neutral particle beams |
US20050191828A1 (en) | 2000-08-11 | 2005-09-01 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
US6939817B2 (en) | 2003-05-08 | 2005-09-06 | Micron Technology, Inc. | Removal of carbon from an insulative layer using ozone |
CN1664987A (en) | 2004-03-05 | 2005-09-07 | 东京毅力科创株式会社 | Base plate processing device,base plate processing method and progarm |
US20050193952A1 (en) | 2004-02-13 | 2005-09-08 | Goodman Matt G. | Substrate support system for reduced autodoping and backside deposition |
US20050193948A1 (en) | 2004-03-08 | 2005-09-08 | Yuuzou Oohirabaru | Vacuum processing apparatus |
US20050201908A1 (en) | 2002-06-18 | 2005-09-15 | Yasuo Nakamura | Reaction apparatus for producing silicon |
US20050199013A1 (en) | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
US20050199342A1 (en) | 2004-03-09 | 2005-09-15 | Ali Shajii | Semiconductor manufacturing gas flow divider system and method |
US20050208718A1 (en) | 2004-03-16 | 2005-09-22 | Lim Jae-Soon | Methods of forming a capacitor using an atomic layer deposition process |
US20050208217A1 (en) | 2003-10-09 | 2005-09-22 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US20050208778A1 (en) | 2004-03-22 | 2005-09-22 | Weimin Li | Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells |
US6949204B1 (en) | 2000-08-08 | 2005-09-27 | Lam Research Corporation | Deformation reduction at the main chamber |
US20050211167A1 (en) | 2002-06-10 | 2005-09-29 | Tokyo Electron Limited | Processing device and processing method |
US20050212119A1 (en) | 2001-10-02 | 2005-09-29 | Shero Eric J | Incorporation of nitrogen into high k dielectric film |
US20050214458A1 (en) | 2004-03-01 | 2005-09-29 | Meiere Scott H | Low zirconium hafnium halide compositions |
US20050211384A1 (en) | 2004-02-13 | 2005-09-29 | Tokyo Electron Limited | Thermally sprayed member, electrode and plasma processing apparatus using the electrode |
US20050214457A1 (en) | 2004-03-29 | 2005-09-29 | Applied Materials, Inc. | Deposition of low dielectric constant films by N2O addition |
US6952656B1 (en) | 2000-04-28 | 2005-10-04 | Applied Materials, Inc. | Wafer fabrication data acquisition and management systems |
US6951587B1 (en) | 1999-12-01 | 2005-10-04 | Tokyo Electron Limited | Ceramic heater system and substrate processing apparatus having the same installed therein |
US20050221021A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for performing atomic layer deposition |
US20050221618A1 (en) | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
US6953609B2 (en) | 2002-10-11 | 2005-10-11 | Stmicroelectronics S.R.L. | High-density plasma process for depositing a layer of silicon nitride |
US20050223994A1 (en) | 2004-04-08 | 2005-10-13 | Blomiley Eric R | Substrate susceptors for receiving semiconductor substrates to be deposited upon and methods of depositing materials over semiconductor substrates |
US20050223982A1 (en) | 2002-04-19 | 2005-10-13 | Park Young H | Apparatus and method for depositing thin film on wafer using remote plasma |
US20050227502A1 (en) | 2004-04-12 | 2005-10-13 | Applied Materials, Inc. | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity |
US6955928B1 (en) | 2001-06-18 | 2005-10-18 | Advanced Micro Devices, Inc. | Closed loop residual gas analyzer process control technique |
US6955741B2 (en) | 2001-08-08 | 2005-10-18 | Asm Japan K.K. | Semiconductor-processing reaction chamber |
US6955836B2 (en) | 2001-12-25 | 2005-10-18 | Anelva Corporation | Silicon oxide film formation method |
US20050233477A1 (en) | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
US20050229848A1 (en) | 2004-04-15 | 2005-10-20 | Asm Japan K.K. | Thin-film deposition apparatus |
US20050229849A1 (en) | 2004-02-13 | 2005-10-20 | Applied Materials, Inc. | High productivity plasma processing chamber |
US20050229972A1 (en) | 2001-03-05 | 2005-10-20 | George Hoshi | Fluid controller |
US20050238807A1 (en) | 2004-04-27 | 2005-10-27 | Applied Materials, Inc. | Refurbishment of a coated chamber component |
US20050245058A1 (en) | 2004-05-03 | 2005-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for producing high throughput strained-si channel mosfets |
US20050241765A1 (en) | 2004-04-30 | 2005-11-03 | Rajinder Dhindsa | Apparatus including showerhead electrode and heater for plasma processing |
US20050241763A1 (en) | 2004-04-30 | 2005-11-03 | Zhisong Huang | Gas distribution system having fast gas switching capabilities |
US20050241176A1 (en) | 2003-10-29 | 2005-11-03 | Shero Eric J | Reaction system for growing a thin film |
US20050250340A1 (en) | 2004-05-07 | 2005-11-10 | Applied Materials, Inc., A Delaware Corporation | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
US20050249876A1 (en) | 2004-05-06 | 2005-11-10 | Semiconductor Leading Edge Technologies, Inc. | Film forming apparatus and method |
US20050251990A1 (en) | 2004-05-12 | 2005-11-17 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US20050253061A1 (en) | 2004-04-28 | 2005-11-17 | Sionex Corporation | Systems and methods for ion species analysis with enhanced condition control and data interpretation |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US20050252447A1 (en) | 2004-05-11 | 2005-11-17 | Applied Materials, Inc. | Gas blocker plate for improved deposition |
US20050255257A1 (en) | 2004-04-20 | 2005-11-17 | Choi Soo Y | Method of controlling the film properties of PECVD-deposited thin films |
US20050255327A1 (en) | 2004-05-14 | 2005-11-17 | Bryce Chaney | Articles having bioactive surfaces and solvent-free methods of preparation thereof |
US20050252455A1 (en) | 2004-05-13 | 2005-11-17 | Tokyo Electron Limited | Substrate transfer mechanism and subtrate transfer apparatus including same, particle removal method for the subtrate transfer mechanism and apparatus, program for executing the method, and storage medium for storing the program |
US20050260837A1 (en) | 2004-05-24 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | Methods for stable and repeatable ion implantation |
WO2005112082A1 (en) | 2004-05-18 | 2005-11-24 | Ips Ltd. | Cyclic pulsed two-level plasma atomic layer deposition apparatus and method |
US20050260850A1 (en) | 2004-05-24 | 2005-11-24 | Asm Japan K.K. | Low-carbon-doped silicon oxide film and damascene structure using same |
US20050260347A1 (en) | 2004-05-21 | 2005-11-24 | Narwankar Pravin K | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20050258280A1 (en) | 2004-05-24 | 2005-11-24 | Shin-Etsu Chemical Co., Ltd. | Shower plate for plasma processing apparatus and plasma processing apparatus |
US20050263719A1 (en) | 2004-05-28 | 2005-12-01 | Toshiyuki Ohdaira | Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system |
US20050263072A1 (en) | 2004-05-26 | 2005-12-01 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
US20050263932A1 (en) | 2002-08-02 | 2005-12-01 | Martin Heugel | Device and method for the production of three-dimensional objects by means of generative production method |
US6972478B1 (en) | 2005-03-07 | 2005-12-06 | Advanced Micro Devices, Inc. | Integrated circuit and method for its manufacture |
JP3725100B2 (en) | 2002-07-31 | 2005-12-07 | アプライド マテリアルズ インコーポレイテッド | Deposition method |
US20050268856A1 (en) | 2004-06-02 | 2005-12-08 | Miller Matthew W | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US20050272247A1 (en) | 2004-06-02 | 2005-12-08 | Tokyo Electron Limited | Substrate processing method and fabrication process of a semiconductor device |
US6975921B2 (en) | 2001-11-09 | 2005-12-13 | Asm International Nv | Graphical representation of a wafer processing process |
US6974781B2 (en) | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
US20050277271A1 (en) | 2004-06-09 | 2005-12-15 | International Business Machines Corporation | RAISED STI PROCESS FOR MULTIPLE GATE OX AND SIDEWALL PROTECTION ON STRAINED Si/SGOI STRUCTURE WITH ELEVATED SOURCE/DRAIN |
US20050274323A1 (en) | 2001-10-29 | 2005-12-15 | Seidel Thomas E | Massively parallel atomic layer deposition/chemical vapor deposition system |
US20050276928A1 (en) | 2003-02-03 | 2005-12-15 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
US6976822B2 (en) | 2002-07-16 | 2005-12-20 | Semitool, Inc. | End-effectors and transfer devices for handling microelectronic workpieces |
US20050282350A1 (en) | 2004-06-22 | 2005-12-22 | You-Hua Chou | Atomic layer deposition for filling a gap between devices |
US20050282101A1 (en) | 2004-06-21 | 2005-12-22 | Naoshi Adachi | Heat treatment jig for silicon semiconductor substrate |
US20050287771A1 (en) | 2004-03-05 | 2005-12-29 | Applied Materials, Inc. | Liquid precursors for the CVD deposition of amorphous carbon films |
US20050285097A1 (en) | 2004-06-24 | 2005-12-29 | Huiling Shang | Integration of strained Ge into advanced CMOS technology |
US20050284573A1 (en) | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
US20050287725A1 (en) | 2003-02-06 | 2005-12-29 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus, and computer recording medium |
US20050285208A1 (en) | 2004-06-25 | 2005-12-29 | Chi Ren | Metal gate electrode for semiconductor devices |
US20050284991A1 (en) | 2004-06-10 | 2005-12-29 | Humanscale Corporation | Mechanism for positional adjustment of an attached device |
US6982046B2 (en) | 2003-10-01 | 2006-01-03 | General Electric Company | Light sources with nanometer-sized VUV radiation-absorbing phosphors |
US20060000411A1 (en) | 2004-07-05 | 2006-01-05 | Jung-Hun Seo | Method of forming a layer on a semiconductor substrate and apparatus for performing the same |
US6984591B1 (en) | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
US20060008997A1 (en) | 2002-09-12 | 2006-01-12 | Chuck Jang | Atomic layer deposition of interpoly oxides in a non-volatile memory device |
US20060006538A1 (en) | 2004-07-02 | 2006-01-12 | Lsi Logic Corporation | Extreme low-K interconnect structure and method |
US20060009044A1 (en) | 2002-09-19 | 2006-01-12 | Masanobu Igeta | Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus |
US20060014384A1 (en) | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
US20060014397A1 (en) | 2004-07-13 | 2006-01-19 | Seamons Martin J | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon |
US20060013946A1 (en) | 2004-07-15 | 2006-01-19 | Park Hong-Bae | Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure |
US20060013674A1 (en) | 2004-07-14 | 2006-01-19 | Elliott Martin R | Methods and apparatus for repositioning support for a substrate carrier |
USRE38937E1 (en) | 1997-02-07 | 2006-01-24 | Sumitomo Mitsubishi Silicon Corporation | Susceptor for vapor-phase growth apparatus |
US6990430B2 (en) | 2002-12-20 | 2006-01-24 | Brooks Automation, Inc. | System and method for on-the-fly eccentricity recognition |
US20060016783A1 (en) | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
US20060019502A1 (en) | 2004-07-23 | 2006-01-26 | Park Beom S | Method of controlling the film properties of a CVD-deposited silicon nitride film |
US20060019033A1 (en) | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US20060019495A1 (en) | 2004-07-20 | 2006-01-26 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata |
KR100547248B1 (en) | 1999-11-12 | 2006-02-01 | 주식회사 하이닉스반도체 | A method for forming gate dielectric layer using alumina in semiconductor device |
JP2006028572A (en) | 2004-07-14 | 2006-02-02 | Ulvac Japan Ltd | Thin film deposition method |
US20060021573A1 (en) | 2004-06-28 | 2006-02-02 | Cambridge Nanotech Inc. | Vapor deposition systems and methods |
US20060021703A1 (en) | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US20060021572A1 (en) | 2004-07-30 | 2006-02-02 | Colorado School Of Mines | High Vacuum Plasma-Assisted Chemical Vapor Deposition System |
US20060026314A1 (en) | 2004-07-30 | 2006-02-02 | Franchuk Brian A | Communication controller with automatic time stamping |
JP2006049352A (en) | 2004-07-30 | 2006-02-16 | Sumitomo Osaka Cement Co Ltd | Suscepter apparatus |
US20060032443A1 (en) | 2004-07-28 | 2006-02-16 | Kazuhide Hasebe | Film formation method and apparatus for semiconductor process |
US20060040054A1 (en) | 2004-08-18 | 2006-02-23 | Pearlstein Ronald M | Passivating ALD reactor chamber internal surfaces to prevent residue buildup |
US20060040508A1 (en) | 2004-08-23 | 2006-02-23 | Bing Ji | Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
US7005391B2 (en) | 2002-06-19 | 2006-02-28 | Samsung Electronics Co., Ltd. | Method of manufacturing inorganic nanotube |
US7005227B2 (en) | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
US20060046518A1 (en) | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
JP2006059931A (en) | 2004-08-18 | 2006-03-02 | Canon Anelva Corp | Rapid thermal process device |
US7010580B1 (en) | 1999-10-08 | 2006-03-07 | Agile Software Corp. | Method and apparatus for exchanging data in a platform independent manner |
US20060048710A1 (en) | 2002-09-24 | 2006-03-09 | Tokyo Electron Limited | Substrate processing apparatus |
US20060051520A1 (en) | 2004-08-31 | 2006-03-09 | Schott Ag | Process and apparatus for the plasma coating of workpieces with spectral evaluation of the process parameters |
US20060051505A1 (en) | 2004-06-18 | 2006-03-09 | Uwe Kortshagen | Process and apparatus for forming nanoparticles using radiofrequency plasmas |
US20060057828A1 (en) | 2004-09-10 | 2006-03-16 | Mitsuhiro Omura | Method of manufacturing semiconductor device |
US20060057858A1 (en) | 2002-07-30 | 2006-03-16 | Hin-Yiu Chung | Method for oxidation of a layer and corresponding holder device for a substrate |
US20060057799A1 (en) | 2002-09-24 | 2006-03-16 | Tokyo Electron Limited | Substrate processing apparatus |
US20060060930A1 (en) | 2004-09-17 | 2006-03-23 | Metz Matthew V | Atomic layer deposition of high dielectric constant gate dielectrics |
US20060062910A1 (en) | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
US20060063346A1 (en) | 2004-06-10 | 2006-03-23 | Jong-Cheol Lee | Method of forming a layer and method of forming a capacitor of a semiconductor device having the same |
US7017514B1 (en) | 2001-12-03 | 2006-03-28 | Novellus Systems, Inc. | Method and apparatus for plasma optimization in water processing |
US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
US20060068121A1 (en) | 2004-08-27 | 2006-03-30 | Lg Philips Lcd Co., Ltd. | Apparatus for treating thin film and method of treating thin film |
US20060068125A1 (en) | 2004-09-30 | 2006-03-30 | Gouri Radhakrishnan | Method for producing carbon surface films by plasma exposure of a carbide compound |
US20060068104A1 (en) | 2003-06-16 | 2006-03-30 | Tokyo Electron Limited | Thin-film formation in semiconductor device fabrication process and film deposition apparatus |
US20060068097A1 (en) | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | method for forming a passivated metal layer |
US7021330B2 (en) | 2003-06-26 | 2006-04-04 | Planar Systems, Inc. | Diaphragm valve with reliability enhancements for atomic layer deposition |
WO2006035281A1 (en) | 2004-09-28 | 2006-04-06 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Precursor for film formation and method for forming ruthenium-containing film |
JP2006090762A (en) | 2004-09-22 | 2006-04-06 | Kawaso Electric Industrial Co Ltd | Temperature measurement instrument |
US20060081558A1 (en) | 2000-08-11 | 2006-04-20 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US20060087638A1 (en) | 2004-10-26 | 2006-04-27 | Noriyuki Hirayanagi | Substrate conveyor apparatus, substrate conveyance method and exposure apparatus |
US20060094236A1 (en) | 2004-11-03 | 2006-05-04 | Elkins Patricia C | Electroless plating of metal caps for chalcogenide-based memory devices |
US20060093756A1 (en) | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
US20060090702A1 (en) | 2004-10-28 | 2006-05-04 | Samsung Electronics Co., Ltd. | Duplex chemical vapor deposition system and pulsed processing method using the same |
US7041609B2 (en) | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
US20060096540A1 (en) | 2004-11-11 | 2006-05-11 | Choi Jin H | Apparatus to manufacture semiconductor |
US20060097220A1 (en) | 2004-11-10 | 2006-05-11 | Samsung Electronics Co., Ltd. | Etching solution and method for removing low-k dielectric layer |
US20060097305A1 (en) | 2004-11-08 | 2006-05-11 | Lee Kee-Jeung | Capacitor with zirconium oxide and method for fabricating the same |
US20060099782A1 (en) | 2004-10-15 | 2006-05-11 | Massachusetts Institute Of Technology | Method for forming an interface between germanium and other materials |
US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US20060102968A1 (en) | 2004-11-15 | 2006-05-18 | International Business Machines Corporation | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide |
JP2006124831A (en) | 2004-09-30 | 2006-05-18 | Nichias Corp | Reaction vessel for vapor phase growth, and vapor phase growth method |
US20060105566A1 (en) | 2004-11-12 | 2006-05-18 | Carlo Waldfried | Ultraviolet assisted pore sealing of porous low k dielectric films |
JP2006124832A (en) | 2004-09-30 | 2006-05-18 | Nichias Corp | Vapor phase growth system and vapor phase growth method |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US7049247B2 (en) | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
US20060110934A1 (en) | 2004-11-08 | 2006-05-25 | Yusuke Fukuchi | Method and apparatus for forming insulating film |
US20060108221A1 (en) | 2004-11-24 | 2006-05-25 | William Goodwin | Method and apparatus for improving measuring accuracy in gas monitoring systems |
US20060110930A1 (en) | 2004-08-16 | 2006-05-25 | Yoshihide Senzaki | Direct liquid injection system and method for forming multi-component dielectric films |
US20060108331A1 (en) | 2002-11-20 | 2006-05-25 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20060107898A1 (en) | 2004-11-19 | 2006-05-25 | Blomberg Tom E | Method and apparatus for measuring consumption of reactants |
WO2006054854A1 (en) | 2004-11-18 | 2006-05-26 | Ips Ltd. | A method for depositing thin film using ald |
WO2006056091A1 (en) | 2004-11-24 | 2006-06-01 | Oc Oerlikon Balzers Ag | Vacuum processing chamber for very large area substrates |
US20060113675A1 (en) | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
US20060113806A1 (en) | 2004-11-29 | 2006-06-01 | Asm Japan K.K. | Wafer transfer mechanism |
US20060113038A1 (en) | 2004-11-29 | 2006-06-01 | Applied Materials, Inc. | Gas distribution system for improved transient phase deposition |
US20060115589A1 (en) | 2004-11-29 | 2006-06-01 | Tokyo Electron Limited | Method and system for measuring a flow rate in a solid precursor delivery system |
US7055875B2 (en) | 2003-07-11 | 2006-06-06 | Asyst Technologies, Inc. | Ultra low contact area end effector |
US7055263B2 (en) | 2003-11-25 | 2006-06-06 | Air Products And Chemicals, Inc. | Method for cleaning deposition chambers for high dielectric constant materials |
US20060118240A1 (en) | 2004-12-03 | 2006-06-08 | Applied Science And Technology, Inc. | Methods and apparatus for downstream dissociation of gases |
US7062161B2 (en) | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
JP2006153706A (en) | 2004-11-30 | 2006-06-15 | Taiyo Nippon Sanso Corp | Temperature sensing element and vapor phase deposition device |
US20060127067A1 (en) | 2004-12-13 | 2006-06-15 | General Electric Company | Fast heating and cooling wafer handling assembly and method of manufacturing thereof |
US20060128142A1 (en) | 2004-12-09 | 2006-06-15 | Caroline Whelan | Method for selective deposition of a thin self-assembled monolayer |
US20060128168A1 (en) | 2004-12-13 | 2006-06-15 | Micron Technology, Inc. | Atomic layer deposited lanthanum hafnium oxide dielectrics |
US20060125099A1 (en) | 2002-07-12 | 2006-06-15 | President And Fellows Of Harvard College | Vapor deposition of tungsten nitride |
TWM292692U (en) | 2005-12-29 | 2006-06-21 | Powerchip Semiconductor Corp | Thermocouple apparatus |
US20060130751A1 (en) | 2004-12-22 | 2006-06-22 | Applied Materials, Inc. | Cluster tool substrate throughput optimization |
US20060130767A1 (en) | 2004-12-22 | 2006-06-22 | Applied Materials, Inc. | Purged vacuum chuck with proximity pins |
US20060133955A1 (en) | 2004-12-17 | 2006-06-22 | Peters David W | Apparatus and method for delivering vapor phase reagent to a deposition chamber |
US20060137609A1 (en) | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
US20060141155A1 (en) | 2002-11-15 | 2006-06-29 | Havard University | Atomic layer deposition using metal amidinates |
US20060141758A1 (en) | 2004-12-28 | 2006-06-29 | Ronald Naumann | Method of forming contact pads |
US20060137608A1 (en) | 2004-12-28 | 2006-06-29 | Choi Seung W | Atomic layer deposition apparatus |
KR100593960B1 (en) | 2004-01-09 | 2006-06-30 | 병호 최 | Atomic Thin Layer Deposition Apparatus and Method |
US7071051B1 (en) | 2004-01-20 | 2006-07-04 | Advanced Micro Devices, Inc. | Method for forming a thin, high quality buffer layer in a field effect transistor and related structure |
US7070178B2 (en) | 2000-06-15 | 2006-07-04 | Koninklijke Philips Electronics N.V. | Holder for a substrate cassette and device provided with such a holder |
US20060148180A1 (en) | 2005-01-05 | 2006-07-06 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US20060147626A1 (en) | 2004-12-30 | 2006-07-06 | Blomberg Tom E | Method of pulsing vapor precursors in an ALD reactor |
US20060148151A1 (en) | 2005-01-04 | 2006-07-06 | Anand Murthy | CMOS transistor junction regions formed by a CVD etching and deposition sequence |
US20060144820A1 (en) | 2004-12-30 | 2006-07-06 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
US7073834B2 (en) | 2004-06-25 | 2006-07-11 | Applied Materials, Inc. | Multiple section end effector assembly |
USD524600S1 (en) | 2004-08-26 | 2006-07-11 | Maytag Corporation | Convection cover for cooking appliance |
US7074690B1 (en) | 2004-03-25 | 2006-07-11 | Novellus Systems, Inc. | Selective gap-fill process |
JP2006186271A (en) | 2004-12-28 | 2006-07-13 | Sharp Corp | Vapor phase deposition device and manufacturing method of film-formed substrate |
US20060154424A1 (en) | 2005-01-09 | 2006-07-13 | Ming-Tzong Yang | Method of manufacturing a split-gate flash memory device |
US20060151117A1 (en) | 2003-04-18 | 2006-07-13 | Hitachi Kokusai Electronic Inc. | Semiconductor producing device and semiconductor producing method |
US7077614B1 (en) | 1998-10-14 | 2006-07-18 | Asm International N.V. | Sorting/storage device for wafers and method for handling thereof |
USD525127S1 (en) | 2004-03-01 | 2006-07-18 | Kraft Foods Holdings, Inc. | Susceptor ring |
US20060156981A1 (en) | 2005-01-18 | 2006-07-20 | Kyle Fondurulia | Wafer support pin assembly |
JP2006188729A (en) | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
US20060156979A1 (en) | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US20060163683A1 (en) | 2002-12-20 | 2006-07-27 | Gundula Roth | Luminescent body and optical device including the same |
US20060162863A1 (en) | 2005-01-21 | 2006-07-27 | Hyung-Joon Kim | Semiconductor plasma-processing apparatus and method |
US20060166428A1 (en) | 2005-01-24 | 2006-07-27 | Isao Kamioka | Semiconductor device and method of fabricating the same |
WO2006078666A2 (en) | 2005-01-18 | 2006-07-27 | Asm America, Inc. | Reaction system for growing a thin film |
US20060165892A1 (en) | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
US20060162661A1 (en) | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
US20060163612A1 (en) | 2003-06-13 | 2006-07-27 | Arizona Board Of Regents | Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn |
US20060162658A1 (en) | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium layer deposition apparatus and method |
US7085623B2 (en) | 2002-08-15 | 2006-08-01 | Asm International Nv | Method and system for using short ranged wireless enabled computers as a service tool |
US7084060B1 (en) | 2005-05-04 | 2006-08-01 | International Business Machines Corporation | Forming capping layer over metal wire structure using selective atomic layer deposition |
WO2006080782A1 (en) | 2005-01-26 | 2006-08-03 | Ips Ltd. | Method of depositing thin layer using atomic layer deposition |
US20060172531A1 (en) | 2005-02-01 | 2006-08-03 | Keng-Chu Lin | Sealing pores of low-k dielectrics using CxHy |
US7088003B2 (en) | 2004-02-19 | 2006-08-08 | International Business Machines Corporation | Structures and methods for integration of ultralow-k dielectrics with improved reliability |
US20060176928A1 (en) | 2005-02-08 | 2006-08-10 | Tokyo Electron Limited | Substrate processing apparatus, control method adopted in substrate processing apparatus and program |
US20060175669A1 (en) | 2005-02-05 | 2006-08-10 | Samsung Electronics Co., Ltd. | Semiconductor device including FinFET having metal gate electrode and fabricating method thereof |
US20060177855A1 (en) | 2005-01-21 | 2006-08-10 | Utermohlen Joseph G | Nanoparticles for manipulation of biopolymers and methods of thereof |
US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
US20060182885A1 (en) | 2005-02-14 | 2006-08-17 | Xinjian Lei | Preparation of metal silicon nitride films via cyclic deposition |
US20060188360A1 (en) | 2005-02-24 | 2006-08-24 | Bonora Anthony C | Direct tool loading |
US20060185589A1 (en) | 2005-02-23 | 2006-08-24 | Raanan Zehavi | Silicon gas injector and method of making |
US7098150B2 (en) | 2004-03-05 | 2006-08-29 | Air Liquide America L.P. | Method for novel deposition of high-k MSiON dielectric films |
US7098149B2 (en) | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
CN1825535A (en) | 2005-02-25 | 2006-08-30 | Ips有限公司 | Vacuum processor |
US20060193980A1 (en) | 2003-02-20 | 2006-08-31 | Toshio Hasegawa | Method for forming film |
US20060191555A1 (en) | 2005-02-28 | 2006-08-31 | Atsushi Yoshida | Method of cleaning etching apparatus |
US7101763B1 (en) | 2005-05-17 | 2006-09-05 | International Business Machines Corporation | Low capacitance junction-isolation for bulk FinFET technology |
US20060196418A1 (en) | 2005-03-04 | 2006-09-07 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
US20060199357A1 (en) | 2005-03-07 | 2006-09-07 | Wan Yuet M | High stress nitride film and method for formation thereof |
US20060196420A1 (en) | 2005-03-02 | 2006-09-07 | Andrey Ushakov | High density plasma chemical vapor deposition apparatus |
US20060205231A1 (en) | 2005-03-09 | 2006-09-14 | Pao-Hwa Chou | Film formation method and apparatus for semiconductor process |
US20060205194A1 (en) | 2005-02-04 | 2006-09-14 | Matthias Bauer | Methods of depositing electrically active doped crystalline Si-containing films |
US20060205223A1 (en) | 2004-12-30 | 2006-09-14 | Smayling Michael C | Line edge roughness reduction compatible with trimming |
US7108753B2 (en) | 2003-10-29 | 2006-09-19 | Asm America, Inc. | Staggered ribs on process chamber to reduce thermal effects |
US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7111232B1 (en) | 2001-03-07 | 2006-09-19 | Thomas Layne Bascom | Method and system for making document objects available to users of a network |
US20060211259A1 (en) | 2005-03-21 | 2006-09-21 | Maes Jan W | Silicon oxide cap over high dielectric constant films |
US20060211224A1 (en) | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US20060211243A1 (en) | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Deposition system and method |
WO2006097525A2 (en) | 2005-03-17 | 2006-09-21 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon oxide containing films |
US20060216942A1 (en) | 2005-03-23 | 2006-09-28 | Samsung Electronics Co., Ltd. | Wafer carrier for minimizing contacting area with wafers |
WO2006101857A2 (en) | 2005-03-21 | 2006-09-28 | Tokyo Electron Limited | A plasma enhanced atomic layer deposition system and method |
US20060213439A1 (en) | 2005-03-25 | 2006-09-28 | Tadahiro Ishizaka | Plasma enhanced atomic layer deposition system having reduced contamination |
US20060213437A1 (en) | 2005-03-28 | 2006-09-28 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system |
US20060213441A1 (en) | 2003-06-27 | 2006-09-28 | Applied Microstructures, Inc. | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
US7115838B2 (en) | 2003-07-23 | 2006-10-03 | Espec Corp. | Unit for varying a temperature of a test piece and testing instrument incorporating same |
US7115305B2 (en) | 2002-02-01 | 2006-10-03 | California Institute Of Technology | Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials |
US20060223337A1 (en) | 2005-03-29 | 2006-10-05 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
US20060219361A1 (en) | 2005-04-01 | 2006-10-05 | Lam Research Corporation | High strip rate downstream chamber |
US20060219363A1 (en) | 2005-03-31 | 2006-10-05 | Naoki Matsumoto | Capacitive coupling plasma processing apparatus and method for using the same |
US20060223301A1 (en) | 2004-12-17 | 2006-10-05 | Serge Vanhaelemeersch | Formation of deep via airgaps for three dimensional wafer to wafer interconnect |
US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US20060228888A1 (en) | 2002-08-18 | 2006-10-12 | Lee Sang-In | Atomic layer deposition of high k metal silicates |
JP2006278058A (en) | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Plasma processing device |
US20060228496A1 (en) | 2004-05-12 | 2006-10-12 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US20060228863A1 (en) | 2005-03-29 | 2006-10-12 | Da Zhang | Method for making a semiconductor device with strain enhancement |
US20060228898A1 (en) | 2005-03-30 | 2006-10-12 | Cory Wajda | Method and system for forming a high-k dielectric layer |
US7122844B2 (en) | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
US20060240662A1 (en) | 2005-04-25 | 2006-10-26 | Sharp Laboratories Of America, Inc. | Method to perform selective atomic layer deposition of zinc oxide |
US20060240187A1 (en) | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
US20060240574A1 (en) | 2005-04-20 | 2006-10-26 | Toru Yoshie | Method for manufacturing semiconductor device |
US7129165B2 (en) | 2003-02-04 | 2006-10-31 | Asm Nutool, Inc. | Method and structure to improve reliability of copper interconnects |
WO2006114781A2 (en) | 2005-04-26 | 2006-11-02 | University College Cork - National University Of Ireland, Cork | Deposition of materials |
US20060247404A1 (en) | 2005-04-29 | 2006-11-02 | Todd Michael A | Apparatus, precursors and deposition methods for silicon-containing materials |
US7132360B2 (en) | 2004-06-10 | 2006-11-07 | Freescale Semiconductor, Inc. | Method for treating a semiconductor surface to form a metal-containing layer |
US20060249175A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
US20060252228A1 (en) | 2005-05-05 | 2006-11-09 | Pei-Ren Jeng | Shallow trench isolation structure having reduced dislocation density |
US20060252244A1 (en) | 2003-04-29 | 2006-11-09 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
US20060252351A1 (en) | 2005-05-04 | 2006-11-09 | Micrel, Incorporated | Wafer carrier checker and method of using same |
US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
US20060258173A1 (en) | 2005-05-16 | 2006-11-16 | Manchao Xiao | Precursors for CVD silicon carbo-nitride films |
US20060254514A1 (en) | 2005-05-11 | 2006-11-16 | Kang Hee C | Catalyst enhanced chemical vapor deposition apparatus |
US20060258078A1 (en) | 2002-08-18 | 2006-11-16 | Lee Sang-In | Atomic layer deposition of high-k metal oxides |
US20060257563A1 (en) | 2004-10-13 | 2006-11-16 | Seok-Joo Doh | Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique |
US20060263522A1 (en) | 2005-05-19 | 2006-11-23 | Piezonics Co., Ltd. | Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof |
US20060260545A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature absorption layer deposition and high speed optical annealing system |
US20060264066A1 (en) | 2005-04-07 | 2006-11-23 | Aviza Technology, Inc. | Multilayer multicomponent high-k films and methods for depositing the same |
US20060263540A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US20060264060A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature plasma deposition process for carbon layer deposition |
JP2006319261A (en) | 2005-05-16 | 2006-11-24 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
US20060269692A1 (en) | 2005-05-26 | 2006-11-30 | Applied Materials, Inc. A Delaware Corporation | Method to increase the compressive stress of PECVD silicon nitride films |
US20060269690A1 (en) | 2005-05-27 | 2006-11-30 | Asm Japan K.K. | Formation technology for nanoparticle films having low dielectric constant |
US7144806B1 (en) | 2002-10-23 | 2006-12-05 | Novellus Systems, Inc. | ALD of tantalum using a hydride reducing agent |
US7143897B1 (en) | 2003-12-09 | 2006-12-05 | H20 International, Inc. | Water filter |
US20060275710A1 (en) | 2005-06-02 | 2006-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20060275933A1 (en) | 2005-06-02 | 2006-12-07 | Applied Materials, Inc. | Thermally conductive ceramic tipped contact thermocouple |
US7147766B2 (en) | 1999-09-17 | 2006-12-12 | Asm Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US20060278524A1 (en) | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
KR20060129566A (en) | 2005-06-07 | 2006-12-18 | 주식회사 알지비 | Structure of susceptor inside plasma enhanced chemical vapor deposition device |
US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286818A1 (en) | 2005-06-17 | 2006-12-21 | Yaxin Wang | Method for silicon based dielectric chemical vapor deposition |
US20060286819A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
US20060283629A1 (en) | 2005-06-17 | 2006-12-21 | Nec Corporation | Wiring board and method for manufacturing the same |
US20060286817A1 (en) | 2003-05-26 | 2006-12-21 | Hitoshi Kato | Cvd method for forming silicon nitride film |
US20060286775A1 (en) | 2005-06-21 | 2006-12-21 | Singh Kaushal K | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7153542B2 (en) | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US20060291982A1 (en) | 2004-11-15 | 2006-12-28 | Keiichi Tanaka | Substrate conveyor apparatus, substrate conveyance method and exposure apparatus |
US20060292845A1 (en) | 2004-09-17 | 2006-12-28 | Chiang Tony P | Processing substrates using site-isolated processing |
US20060292310A1 (en) | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
US20070004204A1 (en) | 1998-02-05 | 2007-01-04 | Asm Japan K.K. | Method for forming insulation film |
US20070006806A1 (en) | 2003-03-26 | 2007-01-11 | Masayuki Imai | Wafer Support Tool for Heat Treatment and Heat Treatment Apparatus |
US20070010072A1 (en) | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
US7163900B2 (en) | 2004-11-01 | 2007-01-16 | Infineon Technologies Ag | Using polydentate ligands for sealing pores in low-k dielectrics |
US7163393B2 (en) | 2004-02-02 | 2007-01-16 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor silicon substrate |
US20070014919A1 (en) | 2005-07-15 | 2007-01-18 | Jani Hamalainen | Atomic layer deposition of noble metal oxides |
US20070012402A1 (en) | 2003-07-08 | 2007-01-18 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
USD535673S1 (en) | 2004-01-16 | 2007-01-23 | Thermal Dynamics Corporation | Gas distributor for a plasma arc torch |
US20070020953A1 (en) | 2005-07-21 | 2007-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a high density dielectric film by chemical vapor deposition |
US20070020167A1 (en) | 2004-06-22 | 2007-01-25 | Han In-Taek | Method of preparing catalyst for manufacturing carbon nanotubes |
US20070020160A1 (en) | 2005-07-07 | 2007-01-25 | Mks Instruments, Inc. | Ozone system for multi-chamber tools |
US20070020830A1 (en) | 2005-07-21 | 2007-01-25 | International Business Machines Corporation | IMPROVED CMOS (Complementary Metal Oxide Semiconductor) TECHNOLOGY |
US7168852B2 (en) | 2001-12-17 | 2007-01-30 | Sintercast Ab | Method and a device for thermal analysis of cast iron |
US20070026148A1 (en) | 2005-07-29 | 2007-02-01 | Nuflare Technology, Inc. | Vapor phase deposition apparatus and vapor phase deposition method |
JP2007027777A (en) | 2001-01-25 | 2007-02-01 | Tokyo Electron Ltd | Method of manufacturing electron device material |
US20070026654A1 (en) | 2005-03-15 | 2007-02-01 | Hannu Huotari | Systems and methods for avoiding base address collisions |
US20070026162A1 (en) | 2005-07-29 | 2007-02-01 | Hung-Wen Wei | Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof |
US20070026540A1 (en) | 2005-03-15 | 2007-02-01 | Nooten Sebastian E V | Method of forming non-conformal layers |
US20070022954A1 (en) | 2003-09-03 | 2007-02-01 | Tokyo Electron Limited | Gas treatment device and heat readiting method |
US7172497B2 (en) | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
US20070031598A1 (en) | 2005-07-08 | 2007-02-08 | Yoshikazu Okuyama | Method for depositing silicon-containing films |
US20070031599A1 (en) | 2004-02-03 | 2007-02-08 | Alexander Gschwandtner | Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layers |
US20070032082A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US20070028842A1 (en) | 2005-08-02 | 2007-02-08 | Makoto Inagawa | Vacuum chamber bottom |
US20070032045A1 (en) | 2003-11-20 | 2007-02-08 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and substrate processing apparatus |
US20070032095A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US20070032054A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US20070032004A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US20070034477A1 (en) | 2005-08-10 | 2007-02-15 | Daifuku Co., Ltd. | Article transport device |
US20070037343A1 (en) | 2005-08-10 | 2007-02-15 | Texas Instruments Inc. | Process for manufacturing dual work function metal gates in a microelectronics device |
US20070037412A1 (en) | 2005-08-05 | 2007-02-15 | Tokyo Electron Limited | In-situ atomic layer deposition |
US20070042117A1 (en) | 2005-08-17 | 2007-02-22 | Applied Materials, Inc. | Method and apparatus to control semiconductor film deposition characteristics |
US20070042581A1 (en) | 2004-01-21 | 2007-02-22 | Hitachi Kokusal Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
US7183229B2 (en) | 2000-12-08 | 2007-02-27 | Sony Corporation | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
KR100688484B1 (en) | 2000-11-30 | 2007-02-28 | 삼성전자주식회사 | Apparatus of treating substrate using activated oxygen and method thereof |
US20070045244A1 (en) | 2005-08-24 | 2007-03-01 | Samsung Electronics Co., Ltd. | Microwave resonance plasma generating apparatus and plasma processing system having the same |
US20070048953A1 (en) | 2005-08-30 | 2007-03-01 | Micron Technology, Inc. | Graded dielectric layers |
US20070044716A1 (en) | 2005-08-24 | 2007-03-01 | Tsutomu Tetsuka | Plasma processing apparatus |
US20070049053A1 (en) | 2005-08-26 | 2007-03-01 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US20070047384A1 (en) | 2005-09-01 | 2007-03-01 | Mclaughlin Jon K | Control system for and method of combining materials |
US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
WO2007027165A1 (en) | 2005-06-09 | 2007-03-08 | Axcelis Technologies, Inc. | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications |
US20070054499A1 (en) | 2005-09-06 | 2007-03-08 | Terasemicon Co., Ltd. | Apparatus and method for forming polycrystalline silicon thin film |
US20070051471A1 (en) | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
US20070051312A1 (en) | 2003-08-07 | 2007-03-08 | Ofer Sneh | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
US20070051299A1 (en) | 2002-10-04 | 2007-03-08 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US20070056843A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056850A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US7192892B2 (en) | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
US20070066010A1 (en) | 2005-09-21 | 2007-03-22 | Takashi Ando | Method of manufacturing semiconductor device |
US20070065578A1 (en) | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
US20070066079A1 (en) | 2003-07-25 | 2007-03-22 | Grant Kloster | Sealing porous dielectrics with silane coupling reagents |
US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
US20070065597A1 (en) | 2005-09-15 | 2007-03-22 | Asm Japan K.K. | Plasma CVD film formation apparatus provided with mask |
US20070062646A1 (en) | 2000-09-25 | 2007-03-22 | Hitachi Kokusai Electric Inc. | Method and apparatus for processing substrates |
US20070066084A1 (en) | 2005-09-21 | 2007-03-22 | Cory Wajda | Method and system for forming a layer with controllable spstial variation |
US20070062439A1 (en) | 2005-09-21 | 2007-03-22 | Naoyuki Wada | Temperature Control Method of Epitaxial Growth Apparatus |
US20070062453A1 (en) | 2005-06-15 | 2007-03-22 | Tokyo Electron Limited | Substrate processing method, computer readable recording medium and substrate processing apparatus |
US7195479B2 (en) | 2003-01-06 | 2007-03-27 | Texas Instruments Incorporated | Hot liner insertion/removal fixture |
US7199513B2 (en) | 2003-06-13 | 2007-04-03 | Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh | Discharge lamp having two-band phosphor |
US7198447B2 (en) | 2002-09-12 | 2007-04-03 | Hitachi Kokusai Electric Inc. | Semiconductor device producing apparatus and producing method of semiconductor device |
US20070074665A1 (en) | 2005-09-30 | 2007-04-05 | Applied Materials, Inc. | Apparatus temperature control and pattern compensation |
US20070077355A1 (en) | 2005-09-30 | 2007-04-05 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
US7202148B2 (en) | 2004-05-10 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company | Method utilizing compensation features in semiconductor processing |
US7202512B2 (en) | 2004-02-17 | 2007-04-10 | Industrial Technology Research Institute | Construction of thin strain-relaxed SiGe layers and method for fabricating the same |
US20070082132A1 (en) | 2005-10-07 | 2007-04-12 | Asm Japan K.K. | Method for forming metal wiring structure |
US20070082508A1 (en) | 2005-10-11 | 2007-04-12 | Chiang Tony P | Methods for discretized processing and process sequence integration of regions of a substrate |
US20070082500A1 (en) | 2005-10-07 | 2007-04-12 | Norman John A T | Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides |
US7205246B2 (en) | 2001-11-16 | 2007-04-17 | Aviza Technology Limited | Forming low k dielectric layers |
US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
KR20070041701A (en) | 2007-03-26 | 2007-04-19 | 노영환 | Defumidifier and air conditioning ventilation system |
US20070087515A1 (en) | 2005-10-17 | 2007-04-19 | Applied Materials, Inc. | Low stress STI films and methods |
US20070087579A1 (en) | 2004-03-31 | 2007-04-19 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
US20070087296A1 (en) | 2005-10-18 | 2007-04-19 | Samsung Electronics Co., Ltd. | Gas supply device and apparatus for processing a substrate |
US20070084405A1 (en) | 2003-09-09 | 2007-04-19 | Adaptive Plasama Technology Corporation | Adaptive plasma source for generating uniform plasma |
US7207763B2 (en) | 2004-01-15 | 2007-04-24 | Terasemicon Co., Ltd | Semiconductor manufacturing system and wafer holder for semiconductor manufacturing system |
USD541125S1 (en) | 2005-10-05 | 2007-04-24 | Powers Products Iii, Llc | Fastener slide |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US20070089670A1 (en) | 2005-10-18 | 2007-04-26 | Asm Japan K.K. | Substrate-supporting device |
US20070092696A1 (en) | 2005-10-21 | 2007-04-26 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant member |
US7211524B2 (en) | 2002-05-17 | 2007-05-01 | Hynix Semiconductor Inc. | Method of forming insulating layer in semiconductor device |
US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
US20070098527A1 (en) | 2005-07-11 | 2007-05-03 | Hall Daniel A | Equipment storage for substrate processing apparatus |
US20070095283A1 (en) | 2005-10-31 | 2007-05-03 | Galewski Carl J | Pumping System for Atomic Layer Deposition |
US20070095286A1 (en) | 2004-12-16 | 2007-05-03 | Yong-Ku Baek | Apparatus and method for thin film deposition |
US20070096194A1 (en) | 2005-10-31 | 2007-05-03 | Christof Streck | Technique for strain engineering in si-based transistors by using embedded semiconductor layers including atoms with high covalent radius |
US7214630B1 (en) | 2005-05-06 | 2007-05-08 | Novellus Systems, Inc. | PMOS transistor with compressive dielectric capping layer |
US20070107845A1 (en) | 2001-08-14 | 2007-05-17 | Shigeru Ishizawa | Semiconductor processing system |
US20070111545A1 (en) | 2005-11-16 | 2007-05-17 | Sung-Hae Lee | Methods of forming silicon dioxide layers using atomic layer deposition |
US20070111470A1 (en) | 2004-12-10 | 2007-05-17 | Micron Technolgy, Inc. | Trench insulation structures and methods |
US20070111030A1 (en) | 2005-10-21 | 2007-05-17 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant multilayer member |
US20070113788A1 (en) | 2003-09-04 | 2007-05-24 | Tokyo Electron Limited | Plasma processing equipment |
US20070116888A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116872A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116887A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
US7223014B2 (en) | 2003-03-28 | 2007-05-29 | Intempco Controls Ltd. | Remotely programmable integrated sensor transmitter |
US20070123060A1 (en) | 2005-11-16 | 2007-05-31 | Rahtu Antti H | Method for the deposition of a film by CVD or ALD |
US20070119370A1 (en) | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070123037A1 (en) | 2005-04-19 | 2007-05-31 | Ji-Young Lee | Method of forming pattern using fine pitch hard mask |
US20070123189A1 (en) | 2005-11-25 | 2007-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
US20070120275A1 (en) | 2005-11-28 | 2007-05-31 | Msp Corporation | High stability and high capacity precursor vapor generation for thin film deposition |
US20070128888A1 (en) | 2005-12-06 | 2007-06-07 | Shigehiro Goto | Substrate heat treatment apparatus |
US20070128858A1 (en) | 2005-12-05 | 2007-06-07 | Suvi Haukka | Method of producing thin films |
US20070128876A1 (en) | 2005-12-02 | 2007-06-07 | Noriaki Fukiage | Chamber dry cleaning |
US20070128570A1 (en) | 2005-12-07 | 2007-06-07 | Shigehiro Goto | Substrate heat treatment apparatus |
US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
US20070129621A1 (en) | 2005-12-05 | 2007-06-07 | Sontra Medical Corporation | System and method for continuous non-invasive glucose monitoring |
US7229502B2 (en) | 2004-05-27 | 2007-06-12 | Macronix International Co., Ltd. | Method of forming a silicon nitride layer |
US20070134821A1 (en) | 2004-11-22 | 2007-06-14 | Randhir Thakur | Cluster tool for advanced front-end processing |
US20070131168A1 (en) | 2005-10-31 | 2007-06-14 | Hisashi Gomi | Gas Supplying unit and substrate processing apparatus |
US20070134942A1 (en) | 2005-12-08 | 2007-06-14 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
US20070134919A1 (en) | 2005-12-08 | 2007-06-14 | Tokyo Electron Limited | Film forming method and apparatus |
US20070137794A1 (en) | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
US7234476B2 (en) | 2002-03-11 | 2007-06-26 | Asm Japan K.K. | Method of cleaning CVD equipment processing chamber |
US7235137B2 (en) | 2001-01-23 | 2007-06-26 | Tokyo Electron Limited | Conductor treating single-wafer type treating device and method for semi-conductor treating |
US7235482B2 (en) | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
US20070146621A1 (en) | 2005-12-28 | 2007-06-28 | Lg.Philips Lcd Co., Ltd. | Apparatus for fabricating flat panel display, and apparatus and method for detecting quantity of static electricity thereof |
US20070148350A1 (en) | 2005-10-27 | 2007-06-28 | Antti Rahtu | Enhanced thin film deposition |
US20070144442A1 (en) | 2005-12-22 | 2007-06-28 | Kyocera Corporation | Susceptor |
US20070148990A1 (en) | 1997-02-27 | 2007-06-28 | Micron Technology, Inc. | Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby |
US20070148347A1 (en) | 2005-12-22 | 2007-06-28 | Timo Hatanpaa | Process for producing oxide films |
US7238653B2 (en) | 2003-03-10 | 2007-07-03 | Hynix Semiconductor Inc. | Cleaning solution for photoresist and method for forming pattern using the same |
US7238596B2 (en) | 2003-06-13 | 2007-07-03 | Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University | Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs |
WO2007076195A2 (en) | 2005-11-22 | 2007-07-05 | Genus, Inc. | Small volume symmetric flow single wafer ald apparatus |
US20070153625A1 (en) | 2003-04-08 | 2007-07-05 | Tetra Laval Holdings & Finance Sa | Method and an apparatus for the continous mixing of two flows |
US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
US20070158026A1 (en) | 2004-01-16 | 2007-07-12 | Manabu Amikura | Processing apparatus |
US20070157466A1 (en) | 2005-12-27 | 2007-07-12 | Nhk Spring Co., Ltd. | Substrate supporting apparatus and manufacturing method therefor |
US20070157683A1 (en) | 2005-12-19 | 2007-07-12 | Tokyo Electron Limited | Method and system for sealing a first assembly to a second assembly of a processing system |
US20070166966A1 (en) | 2004-09-03 | 2007-07-19 | Asm America, Inc. | Deposition from liquid sources |
US20070163490A1 (en) | 2005-12-22 | 2007-07-19 | Freiberger Compound Materials Gmbh | Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby |
US20070166999A1 (en) | 2002-08-28 | 2007-07-19 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
US20070163625A1 (en) | 2004-01-05 | 2007-07-19 | Hynix Semiconductor Inc. | Method for forming a photoresist pattern |
US20070166457A1 (en) | 2003-03-07 | 2007-07-19 | Hisayoshi Yamoto | Vaporizer, film forming apparatus including the same, method of vaporization and method of forming film |
US20070163440A1 (en) | 2006-01-19 | 2007-07-19 | Atto Co., Ltd. | Gas separation type showerhead |
US20070163996A1 (en) | 2006-01-18 | 2007-07-19 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20070166459A1 (en) | 2006-01-16 | 2007-07-19 | Advanced Micro-Fabrication Equipment, Inc. | Assembly and method for delivering a reactant material onto a substrate |
US20070170372A1 (en) | 1999-12-13 | 2007-07-26 | Semequip, Inc. | Dual mode ion source for ion implantation |
US20070173071A1 (en) | 2006-01-20 | 2007-07-26 | International Business Machines Corporation | SiCOH dielectric |
US20070178235A1 (en) | 2004-06-14 | 2007-08-02 | Adeka Corporation | Thin film-forming material and method for producing thin film |
US20070175393A1 (en) | 2006-01-31 | 2007-08-02 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and storage medium storing program for implementing the method |
US20070175397A1 (en) | 2006-01-27 | 2007-08-02 | Shizuo Tomiyasu | Method for packing solid organometallic compound and packed container |
KR20070079797A (en) | 2006-02-03 | 2007-08-08 | 위순임 | Substrate processing system having multi remote plasma generator |
US20070181066A1 (en) | 2006-02-03 | 2007-08-09 | Integrated Materials, Inc. | Baffled liner cover |
US20070184179A1 (en) | 2006-02-09 | 2007-08-09 | Akshay Waghray | Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc |
WO2007088940A1 (en) | 2006-02-02 | 2007-08-09 | Tokyo Electron Limited | Pressure reducing apparatus |
US7256375B2 (en) | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
US20070186849A1 (en) | 2006-02-13 | 2007-08-16 | Nec Electronics Corporation | Deposition apparatus and method for depositing film |
US20070186952A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber |
US20070190266A1 (en) | 2006-02-10 | 2007-08-16 | Applied Materials, Inc. | Water vapor passivation of a wall facing a plasma |
US20070190744A1 (en) | 2002-10-31 | 2007-08-16 | Atsushi Hiraiwa | Method for fabricating semiconductor devices |
US20070190782A1 (en) | 2006-02-15 | 2007-08-16 | Hyung-Sang Park | Method of depositing Ru films having high density |
US20070187362A1 (en) | 2006-02-13 | 2007-08-16 | Hideo Nakagawa | Dry etching method, fine structure formation method, mold and mold fabrication method |
TW200731357A (en) | 2006-01-18 | 2007-08-16 | Tokyo Electron Ltd | Plasma processing apparatus and controlling method for plasma processing apparatus |
US20070187363A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20070190362A1 (en) | 2005-09-08 | 2007-08-16 | Weidman Timothy W | Patterned electroless metallization processes for large area electronics |
KR20070084683A (en) | 2006-02-21 | 2007-08-27 | 국민대학교산학협력단 | Molecular layer deposition |
USD549815S1 (en) | 2006-03-27 | 2007-08-28 | Murphy Timothy M | Air flow directing fixture for heating, air conditioning and ventilation devices |
US20070199510A1 (en) | 2006-02-24 | 2007-08-30 | Weiner Kurt H | Systems and methods for sealing in site-isolated reactors |
US20070202678A1 (en) | 2006-02-28 | 2007-08-30 | Plombon John J | Catalytically enhanced atomic layer deposition process |
US7265061B1 (en) | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
US20070205788A1 (en) | 2006-02-21 | 2007-09-06 | Sumitomo Electric Industries, Ltd. | Wafer holder, and wafer prober provided therewith |
US20070207275A1 (en) | 2006-02-21 | 2007-09-06 | Applied Materials, Inc. | Enhancement of remote plasma source clean for dielectric films |
US20070212811A1 (en) | 2002-06-05 | 2007-09-13 | Applied Materials, Inc. | Low temperature CVD process with selected stress of the CVD layer on CMOS devices |
US20070209590A1 (en) | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Sealing device and method for a processing system |
US20070209588A1 (en) | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Exhaust system for a vacuum processing system |
US20070212484A1 (en) | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20070210890A1 (en) | 2006-03-09 | 2007-09-13 | International Business Machines Corporation | Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer |
US20070212827A1 (en) | 2006-02-17 | 2007-09-13 | Kunal Girotra | Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same |
US20070218705A1 (en) | 2004-08-09 | 2007-09-20 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
US20070215048A1 (en) | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle contamination in a deposition system |
US20070215278A1 (en) | 2006-03-06 | 2007-09-20 | Muneo Furuse | Plasma etching apparatus and method for forming inner wall of plasma processing chamber |
US20070215580A1 (en) | 2006-03-16 | 2007-09-20 | Tokyo Electron Limited | Plasma processing apparatus and electrode used therein |
US20070218200A1 (en) | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
US20070222131A1 (en) | 2006-03-23 | 2007-09-27 | Yasuhiro Fukumoto | Substrate support structure, heat treatment apparatus using same, first sheet-like object for use in the substrate support structure, method of manufacturing the substrate support structure, heat treatment apparatus, and substrate sucking method |
US20070224833A1 (en) | 2006-03-23 | 2007-09-27 | Asm Japan K.K. | Method of forming carbon polymer film using plasma CVD |
US20070224777A1 (en) | 2004-01-30 | 2007-09-27 | Tokyo Electron Limited | Substrate Holder Having a Fluid Gap and Method of Fabricating the Substrate Holder |
CN101047143A (en) | 2006-03-31 | 2007-10-03 | 东京毅力科创株式会社 | Basal plate carrying table and basal plate processing device |
US20070231488A1 (en) | 2004-04-30 | 2007-10-04 | Hans Von Kaenel | Method for Producing Virtual Ge Substrates for III/V-Integration on Si(001) |
US20070232071A1 (en) | 2006-03-31 | 2007-10-04 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
US20070227665A1 (en) | 2006-03-30 | 2007-10-04 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US20070232501A1 (en) | 2006-03-29 | 2007-10-04 | Osamu Tonomura | Manufacturing method of semiconductor integrated circuit |
US20070232031A1 (en) | 2004-06-10 | 2007-10-04 | Applied Materials, Inc. | UV assisted low temperature epitaxial growth of silicon-containing films |
US7279256B2 (en) | 2004-07-30 | 2007-10-09 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US20070237698A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
US20070237699A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
US20070238305A1 (en) | 2006-04-11 | 2007-10-11 | Applied Materials, Inc. | Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material |
US20070237697A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition |
US20070234955A1 (en) | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
USD553104S1 (en) | 2004-04-21 | 2007-10-16 | Tokyo Electron Limited | Absorption board for an electric chuck used in semiconductor manufacture |
US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
WO2007117718A2 (en) | 2006-04-07 | 2007-10-18 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US20070241688A1 (en) | 2005-10-27 | 2007-10-18 | Devincentis Marc | Plasma lamp with conductive material positioned relative to rf feed |
US20070249131A1 (en) | 2006-04-21 | 2007-10-25 | International Business Machines Corporation | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors |
US20070247075A1 (en) | 2006-04-21 | 2007-10-25 | Applied Materials, Inc. | Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone |
US20070248767A1 (en) | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US20070248832A1 (en) | 2006-04-20 | 2007-10-25 | Shin-Etsu Chemical Co., Ltd. | Conductive, plasma-resistant member |
US20070251456A1 (en) | 2006-04-27 | 2007-11-01 | Applied Materials, Inc., A Delaware Corporation | Composite heater and chill plate |
US20070252244A1 (en) | 2006-04-28 | 2007-11-01 | Micron Technology, Inc. | Methods of forming material over substrates |
US20070252233A1 (en) | 2006-04-28 | 2007-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
JP2007287902A (en) | 2006-04-17 | 2007-11-01 | Hitachi High-Technologies Corp | Dry etching method |
US20070252532A1 (en) | 2005-10-27 | 2007-11-01 | Devincentis Marc | Plasma lamp with stable feedback amplification and method therefor |
US20070251444A1 (en) | 2006-04-25 | 2007-11-01 | Stmicroelectronics S.A. | PEALD Deposition of a Silicon-Based Material |
US20070254414A1 (en) | 2006-04-26 | 2007-11-01 | Sony Corporation | Method of manufacturing semiconductor device, and semiconductor device |
US7290813B2 (en) | 2004-12-16 | 2007-11-06 | Asyst Technologies, Inc. | Active edge grip rest pad |
US20070258506A1 (en) | 2006-05-02 | 2007-11-08 | Schwagerman William H | Temperature sensors and methods of manufacture thereof |
US20070259778A1 (en) | 2006-04-28 | 2007-11-08 | Syracuse University | Flameless heating system |
US20070258855A1 (en) | 1999-04-30 | 2007-11-08 | Tso3, Inc. | Method and apparatus for ozone sterilization |
US7294581B2 (en) | 2005-10-17 | 2007-11-13 | Applied Materials, Inc. | Method for fabricating silicon nitride spacer structures |
US20070261868A1 (en) | 2006-05-12 | 2007-11-15 | Gross James R | Magnetic torque-limiting device and method |
US20070264807A1 (en) | 2004-08-30 | 2007-11-15 | Stefano Leone | Cleaining Process and Operating Process for a Cvd Reactor |
US20070264793A1 (en) | 2006-05-12 | 2007-11-15 | Samsung Electronics Company, Ltd. | Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers |
US20070264427A1 (en) | 2005-12-21 | 2007-11-15 | Asm Japan K.K. | Thin film formation by atomic layer growth and chemical vapor deposition |
WO2007131051A1 (en) | 2006-05-05 | 2007-11-15 | Applied Materials, Inc. | Method for fabricating a gate dielectric of a field effect transistor |
US7298009B2 (en) | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
US20070266932A1 (en) | 2006-05-18 | 2007-11-22 | Kabushiki Kaisha Toshiba | Vapor phase growth apparatus and method for vapor phase growth |
US20070269983A1 (en) | 2003-06-27 | 2007-11-22 | Ofer Sneh | Ald Apparatus and Method |
US20070266945A1 (en) | 2006-05-16 | 2007-11-22 | Asm Japan K.K. | Plasma cvd apparatus equipped with plasma blocking insulation plate |
US7301623B1 (en) | 2003-12-16 | 2007-11-27 | Nanometrics Incorporated | Transferring, buffering and measuring a substrate in a metrology system |
US20070275166A1 (en) | 2006-05-23 | 2007-11-29 | Hareesh Thridandam | Process for producing silicon oxide films from organoaminosilane precursors |
USD556704S1 (en) | 2005-08-25 | 2007-12-04 | Hitachi High-Technologies Corporation | Grounded electrode for a plasma processing apparatus |
US20070277735A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US20070281105A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
WO2007140376A2 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | A method for depositing and curing low-k films for gapfill and conformal film applications |
US20070281082A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
US20070281496A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
USD557226S1 (en) | 2005-08-25 | 2007-12-11 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
US7307028B2 (en) | 2003-04-18 | 2007-12-11 | Advanced Lcd Technologies Development Center Co., Ltd. | Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device |
US20070286957A1 (en) | 2004-12-28 | 2007-12-13 | Bridgestone Corporation | Conductive Endless Belt, Method For Producing Same, And Image Forming Apparatus Employing Same |
KR20070117817A (en) | 2006-06-09 | 2007-12-13 | 주식회사 아이피에스 | Method of depositing dielectric layer with increased gap-fill ability |
US20070289534A1 (en) | 2006-05-30 | 2007-12-20 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US20070292974A1 (en) | 2005-02-17 | 2007-12-20 | Hitachi Kokusai Electric Inc | Substrate Processing Method and Substrate Processing Apparatus |
US7311977B2 (en) | 2004-11-29 | 2007-12-25 | Kabushiki Kaisha Kobe Seiko Sho | Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film |
USD558021S1 (en) | 2003-01-30 | 2007-12-25 | Roger Lawrence | Metal fabrication clamp |
US20070298362A1 (en) | 2006-06-26 | 2007-12-27 | Applied Materials, Inc. | Increased tool utilization/reduction in mwbc for uv curing chamber |
US20070295602A1 (en) | 2006-06-27 | 2007-12-27 | Tiller Jennifer W | Ground shield with reentrant feature |
US20070298565A1 (en) | 2006-06-22 | 2007-12-27 | Chun-Feng Nieh | Junction leakage reduction in SiGe process by implantation |
USD558888S1 (en) * | 2005-08-30 | 2008-01-01 | Chemglass, Inc. | Reaction block for chemical synthesis for use upon a hot plate stirrer |
US20080003425A1 (en) | 2006-06-29 | 2008-01-03 | Spencer James T | Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings |
US20080003838A1 (en) | 2006-06-22 | 2008-01-03 | Asm International N.V. | Deposition of complex nitride films |
US20080003824A1 (en) | 2006-06-28 | 2008-01-03 | Deenesh Padhi | Method For Depositing an Amorphous Carbon Film with Improved Density and Step Coverage |
US20080006208A1 (en) | 2006-07-05 | 2008-01-10 | Sumitomo Electric Industries, Ltd. | Metal organic chemical vapor deposition equipment |
USD559993S1 (en) | 2005-03-30 | 2008-01-15 | Tokyo Electron Limited | Cover ring |
USD559994S1 (en) | 2005-03-30 | 2008-01-15 | Tokyo Electron Limited | Cover ring |
US7320544B2 (en) | 2005-07-13 | 2008-01-22 | Actherm, Inc. | Conducting structure and electronic clinical thermometer embodying the structure |
US20080020591A1 (en) | 2005-05-26 | 2008-01-24 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure |
US20080020593A1 (en) | 2006-07-21 | 2008-01-24 | Wang Chang-Gong | ALD of metal silicate films |
US20080018004A1 (en) | 2006-06-09 | 2008-01-24 | Air Products And Chemicals, Inc. | High Flow GaCl3 Delivery |
US20080026574A1 (en) | 2004-05-26 | 2008-01-31 | Tokyo Electron Limited | Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process |
US20080026162A1 (en) | 2006-07-29 | 2008-01-31 | Dickey Eric R | Radical-enhanced atomic layer deposition system and method |
US20080023436A1 (en) | 2006-07-27 | 2008-01-31 | Stmicroelectronics S.A. | Deposition by adsorption under an electrical field |
US7326656B2 (en) | 2004-09-30 | 2008-02-05 | Intel Corporation | Method of forming a metal oxide dielectric |
US7327948B1 (en) | 2005-04-26 | 2008-02-05 | Novellus Systems, Inc. | Cast pedestal with heating element and coaxial heat exchanger |
US20080031708A1 (en) | 2006-07-10 | 2008-02-07 | Bonora Anthony C | Variable lot size load port |
US20080032514A1 (en) | 2004-11-29 | 2008-02-07 | Hitachi Kokusai Electric Inc. | Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus |
US20080029790A1 (en) | 2006-08-03 | 2008-02-07 | Micron Technology, Inc. | ALD of silicon films on germanium |
US7329947B2 (en) | 2003-11-07 | 2008-02-12 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor substrate |
US20080035055A1 (en) | 2006-08-08 | 2008-02-14 | Tokyo Electron Limited | Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system |
US20080035607A1 (en) | 2004-06-17 | 2008-02-14 | O'hara Anthony | Method and Apparatus for the Etching of Microstructures |
US20080038485A1 (en) | 2006-08-08 | 2008-02-14 | Asm Japan K.K. | Method for forming silicon carbide film containing oxygen |
US20080035306A1 (en) | 2006-08-08 | 2008-02-14 | White John M | Heating and cooling of substrate support |
US20080038934A1 (en) | 2006-04-18 | 2008-02-14 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
US20080036354A1 (en) | 2006-08-11 | 2008-02-14 | Martin Letz | External electrode fluorescent lamp with optimized operating efficiency |
USD562357S1 (en) | 2007-04-20 | 2008-02-19 | Alamo Group, Inc. | Disk for rotary mower knives |
EP1889817A2 (en) | 1997-07-14 | 2008-02-20 | Silicon Valley Group Thermal Systems LLC | Single body injector |
US20080044932A1 (en) | 2006-03-24 | 2008-02-21 | Samoilov Arkadii V | Carbon precursors for use during silicon epitaxial film formation |
US20080043803A1 (en) | 2006-07-06 | 2008-02-21 | Komatsu Ltd. | Temperature sensor, temperature control device, temperature controller and temperature-control method |
US20080042165A1 (en) | 2006-08-02 | 2008-02-21 | Sony Corporation | Semiconductor device and method for manufacturing semiconductor device |
US20080044938A1 (en) | 2006-08-15 | 2008-02-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for low-temperature ion implantation |
US20080042192A1 (en) | 2006-08-18 | 2008-02-21 | Samsung Electronics Co., Ltd. | Semiconductor memory device including charge trap layer with stacked nitride layers |
US20080050538A1 (en) | 2004-08-06 | 2008-02-28 | Tokyo Electron Limited | Thin Film Forming Method and Thin Film Forming Apparatus |
US20080056860A1 (en) | 2006-08-28 | 2008-03-06 | Shinko Electric Co., Ltd. | Load port device |
US20080057659A1 (en) | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
US20080054332A1 (en) | 2006-08-30 | 2008-03-06 | Korea Research Institute Of Chemical Technology | Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition |
CN101142012A (en) | 2005-07-26 | 2008-03-12 | 川崎成套设备股份有限公司 | Mixed fluid uniformization device and mixed fluid feeding apparatus |
US20080061667A1 (en) | 2004-07-09 | 2008-03-13 | Koninklijke Philips Electronics, N.V. | Uvc/Vuv Dielectric Barrier Discharge Lamp with Reflector |
WO2008029943A1 (en) * | 2006-09-08 | 2008-03-13 | Semiconductor & Display Corporation | Lift pin mechanism |
US20080063798A1 (en) | 2006-08-30 | 2008-03-13 | Kher Shreyas S | Precursors and hardware for cvd and ald |
JP2008060304A (en) | 2006-08-31 | 2008-03-13 | Hitachi High-Technologies Corp | Method and device for plasma processing |
US20080067146A1 (en) | 2006-09-15 | 2008-03-20 | Katsuhiko Onishi | Plasma processing apparatus, method for detecting abnormality of plasma processing apparatus and plasma processing method |
US20080066778A1 (en) | 2006-09-19 | 2008-03-20 | Asm Japan K.K. | Method of cleaning uv irradiation chamber |
US20080069951A1 (en) | 2006-09-15 | 2008-03-20 | Juan Chacin | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
US20080069955A1 (en) | 2006-09-20 | 2008-03-20 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
JP2008066159A (en) | 2006-09-08 | 2008-03-21 | Noritsu Koki Co Ltd | Plasma generator and workpiece treatment device using it |
US20080075881A1 (en) | 2006-07-26 | 2008-03-27 | Won Seok-Jun | Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition |
US20080075562A1 (en) | 2006-09-22 | 2008-03-27 | Maria De Ridder Christianus Ge | Processing system with increased cassette storage capacity |
US20080075838A1 (en) | 2006-09-22 | 2008-03-27 | Hisashi Inoue | Oxidation apparatus and method for semiconductor process |
US20080076266A1 (en) | 2006-09-21 | 2008-03-27 | Asm Japan K.K. | Method for forming insulation film having high density |
US20080072821A1 (en) | 2006-07-21 | 2008-03-27 | Dalton Jeremic J | Small volume symmetric flow single wafer ald apparatus |
US20080076281A1 (en) | 2006-09-25 | 2008-03-27 | Lightsources Inc. | Snap-lock connector |
US20080076070A1 (en) | 2006-09-08 | 2008-03-27 | Samsung Electronics Co., Ltd. | Methods of Forming Fine Patterns In Integrated Circuits Using Atomic Layer Deposition |
US7351057B2 (en) | 2005-04-27 | 2008-04-01 | Asm International N.V. | Door plate for furnace |
US20080081121A1 (en) | 2006-09-21 | 2008-04-03 | Fujifilm Corporation | Composition, film and formation process thereof |
US20080081113A1 (en) | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Nitrogen profile engineering in nitrided high dielectric constant films |
US20080081104A1 (en) | 2006-09-28 | 2008-04-03 | Kazuhide Hasebe | Film formation method and apparatus for forming silicon oxide film |
US7356762B2 (en) | 2002-07-08 | 2008-04-08 | Asm International Nv | Method for the automatic generation of an interactive electronic equipment documentation package |
US7354482B2 (en) | 2003-10-15 | 2008-04-08 | Shimadzu Corporation | Film deposition device |
US7354847B2 (en) | 2004-01-26 | 2008-04-08 | Taiwan Semiconductor Manufacturing Company | Method of trimming technology |
US20080083710A1 (en) | 2006-09-22 | 2008-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
US20080083948A1 (en) | 2006-10-05 | 2008-04-10 | Hsien-Hsin Lin | SiGe selective growth without a hard mask |
US20080085226A1 (en) | 2006-10-10 | 2008-04-10 | Asm America, Inc. | Precursor delivery system |
JP2008085129A (en) | 2006-09-28 | 2008-04-10 | Taiheiyo Cement Corp | Substrate mounting apparatus |
US20080085610A1 (en) | 2006-10-05 | 2008-04-10 | Asm America, Inc. | Ald of metal silicate films |
US20080087642A1 (en) | 2006-09-25 | 2008-04-17 | Sawin Herbert H | Method for removing surface deposits in the interior of a chemical vapor deposition reactor |
US20080087218A1 (en) | 2006-10-04 | 2008-04-17 | Hitachi Kokusai Electric Inc. | Board processing apparatus and method of fabricating semiconductor apparatus |
US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
JP2008089320A (en) | 2006-09-29 | 2008-04-17 | Nicom Co Ltd | Flow rate measuring apparatus |
US7361447B2 (en) | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US20080092821A1 (en) | 2004-08-24 | 2008-04-24 | Shin-Etsu Handotai Co., Ltd. | Quartz Jig and Semiconductor Manufacturing Apparatus |
US20080092815A1 (en) | 2006-10-18 | 2008-04-24 | Advanced Micro-Fabrication Equipment, Inc. Asia | Gas distribution assembly for use in a semiconductor work piece processing reactor |
US20080102203A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US20080099147A1 (en) | 2006-10-26 | 2008-05-01 | Nyi Oo Myo | Temperature controlled multi-gas distribution assembly |
US20080102208A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US20080102205A1 (en) | 2006-10-27 | 2008-05-01 | Barry Sean T | ALD of metal-containing films using cyclopentadienyl compounds |
US20080102603A1 (en) | 2004-11-30 | 2008-05-01 | Shin-Etsu Handotai Co., Ltd. | Method for Producing Direct Bonded Wafer and Direct Bonded Wafer |
US20080102630A1 (en) | 2006-10-25 | 2008-05-01 | Elpida Memory, Inc. | Method of manufacturing semiconductor device |
US20080105276A1 (en) | 2006-09-13 | 2008-05-08 | Industrial Technology Research Institute | Method of improving surface flame resistnace of substrate |
USD568914S1 (en) * | 2002-09-10 | 2008-05-13 | Applied Materials, Inc. | Substrate support lift pin |
US20080110568A1 (en) | 2006-11-10 | 2008-05-15 | Adp Engineering Co., Ltd. | Process chamber having gate slit opening and closing apparatus |
US20080113097A1 (en) | 2006-11-14 | 2008-05-15 | Maitreyee Mahajani | LOW TEMPERATURE ALD SiO2 |
US20080113096A1 (en) | 2006-11-14 | 2008-05-15 | Maitreyee Mahajani | Method of depositing catalyst assisted silicates of high-k materials |
US20080113094A1 (en) | 2006-11-15 | 2008-05-15 | Casper Daniel J | Compositions with Improved Adhesion to Low Surface Energy Substrates |
US20080110401A1 (en) | 2004-05-18 | 2008-05-15 | Sumco Corporation | Susceptor For Vapor-Phase Growth Reactor |
US7376520B2 (en) | 2005-03-16 | 2008-05-20 | Lam Research Corporation | System and method for gas flow verification |
US20080118334A1 (en) | 2006-11-22 | 2008-05-22 | Bonora Anthony C | Variable pitch storage shelves |
US7378618B1 (en) | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
US7379785B2 (en) | 2002-11-28 | 2008-05-27 | Tokyo Electron Limited | Substrate processing system, coating/developing apparatus, and substrate processing apparatus |
US20080124908A1 (en) | 2006-08-31 | 2008-05-29 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US20080124946A1 (en) | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
US20080121626A1 (en) | 2006-06-27 | 2008-05-29 | Thomas Timothy N | Dynamic surface annealing using addressable laser array with pyrometry feedback |
US20080124945A1 (en) | 2005-02-17 | 2008-05-29 | Hitachi Kokusa Electric Inc. | Production Method for Semiconductor Device and Substrate Processing Apparatus |
US20080124197A1 (en) | 2003-11-10 | 2008-05-29 | Van Der Meulen Peter | Semiconductor manufacturing process modules |
US20080121962A1 (en) | 2006-08-31 | 2008-05-29 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-k dielectric and metal gates |
US20080121177A1 (en) | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US20080133154A1 (en) | 2002-04-12 | 2008-06-05 | Schneider Electric | System and Method for Detecting Non-Cathode Arcing in a Plasma Generation Apparatus |
US20080128726A1 (en) | 2005-01-31 | 2008-06-05 | Ube Industries, Ltd., 1978 - 96 | Red Nitride Phosphor and Production Method Thereof |
US20080132046A1 (en) | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
US20080129209A1 (en) | 2006-11-30 | 2008-06-05 | Veeco Instruments, Inc. | Adaptive controller for ion source |
US20080135936A1 (en) | 2006-12-08 | 2008-06-12 | Kazuaki Nakajima | Semiconductor device and manufacturing method thereof |
US20080135516A1 (en) | 2006-11-10 | 2008-06-12 | Hitachi Kokusai Electric Inc. | Substrate treatment device |
US20080134887A1 (en) | 2003-04-15 | 2008-06-12 | Applied Materials, Inc. | Low pressure drop canister for fixed bed scrubber applications and method of using same |
USD571383S1 (en) | 2005-07-29 | 2008-06-17 | Tokyo Electron Limited | Top panel for microwave introduction window of a plasma processing apparatus |
US20080142483A1 (en) | 2006-12-07 | 2008-06-19 | Applied Materials, Inc. | Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills |
US20080146033A1 (en) | 2006-09-04 | 2008-06-19 | Kyung-Min Park | Gap-filling method of semiconductor device |
US20080142046A1 (en) | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
USD571831S1 (en) | 2005-07-29 | 2008-06-24 | Tokyo Electron Limited | Top panel for microwave introduction window of a plasma processing apparatus |
US20080152463A1 (en) | 2006-09-27 | 2008-06-26 | Mahendran Chidambaram | Wafer processing system with dual wafer robots capable of asynchronous motion |
US20080149031A1 (en) | 2006-03-30 | 2008-06-26 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
KR20080058620A (en) | 2006-12-22 | 2008-06-26 | 세메스 주식회사 | Plasma chemical vopar deposition equipment for supplying to divided gas nozzles |
US20080153311A1 (en) | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
US20080149593A1 (en) | 2005-08-25 | 2008-06-26 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
US20080153308A1 (en) | 2004-02-27 | 2008-06-26 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus |
US7393736B2 (en) | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
US7393418B2 (en) | 2004-09-29 | 2008-07-01 | Covalent Materials Corporation | Susceptor |
US20080157157A1 (en) | 2006-12-27 | 2008-07-03 | Osamu Tonomura | Semiconductor integrated circuit device |
US20080157365A1 (en) | 2006-12-27 | 2008-07-03 | Andrew Ott | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor |
US20080156769A1 (en) | 2006-12-29 | 2008-07-03 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
US20080157212A1 (en) | 2006-12-28 | 2008-07-03 | Lavoie Adrien R | Tunable gate electrode work function material for transistor applications |
US7396491B2 (en) | 2006-04-06 | 2008-07-08 | Osram Sylvania Inc. | UV-emitting phosphor and lamp containing same |
US7399570B2 (en) | 2004-06-18 | 2008-07-15 | Hynix Semiconductor Inc. | Water-soluble negative photoresist polymer and composition containing the same |
JP2008172083A (en) | 2007-01-12 | 2008-07-24 | Sharp Corp | Vapor growth device and vapor growth method |
US20080176375A1 (en) | 2007-01-19 | 2008-07-24 | Qimonda Ag | Method for forming a dielectric layer |
US20080173238A1 (en) | 2006-12-12 | 2008-07-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel |
US20080173326A1 (en) | 2007-01-23 | 2008-07-24 | Quancheng Gu | Oxygen plasma clean to remove carbon species deposited on a glass dome surface |
US20080173237A1 (en) | 2007-01-19 | 2008-07-24 | Collins Kenneth S | Plasma Immersion Chamber |
US20080173240A1 (en) | 2007-01-24 | 2008-07-24 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
US20080176335A1 (en) | 2006-12-29 | 2008-07-24 | Thermo Fisher Scientific Inc. | Apparatus and method for generating nitrogen oxides |
US20080176412A1 (en) | 2007-01-22 | 2008-07-24 | Elpida Memory, Inc. | Atomic layer deposition system including a plurality of exhaust tubes |
US7405166B2 (en) | 2006-01-10 | 2008-07-29 | Industrial Technology Research Institute | Method of manufacturing charge storage device |
US20080179104A1 (en) | 2006-11-14 | 2008-07-31 | Smith International, Inc. | Nano-reinforced wc-co for improved properties |
US20080182390A1 (en) | 2006-12-07 | 2008-07-31 | Francesco Lemmi | Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material |
US20080182411A1 (en) | 2007-01-26 | 2008-07-31 | Asm America, Inc. | Plasma-enhanced ald of tantalum nitride films |
US20080179291A1 (en) | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Process for wafer backside polymer removal and wafer front side photoresist removal |
US20080179715A1 (en) | 2007-01-30 | 2008-07-31 | Micron Technology, Inc. | Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device |
US20080178608A1 (en) | 2007-01-26 | 2008-07-31 | Takumi Tandou | Plasma processing apparatus and plasma processing method |
WO2008091900A1 (en) | 2007-01-26 | 2008-07-31 | Applied Materials, Inc. | Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild |
US20080182075A1 (en) | 2006-12-12 | 2008-07-31 | Saurabh Chopra | Phosphorus Containing Si Epitaxial Layers in N-Type Source/Drain Junctions |
US20080178805A1 (en) | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US7411352B2 (en) | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US7410290B2 (en) | 2005-03-14 | 2008-08-12 | Kabushiki Kaisha Bio Echo Net | Ear-type clinical thermometer |
US20080194088A1 (en) | 2007-02-14 | 2008-08-14 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
US20080194105A1 (en) | 2007-02-14 | 2008-08-14 | Juan Dominguez | Organometallic precursors for seed/barrier processes and methods thereof |
US20080194169A1 (en) | 2007-02-08 | 2008-08-14 | Applied Materials, Inc. | Susceptor with insulative inserts |
US20080191193A1 (en) | 2007-01-22 | 2008-08-14 | Xuegeng Li | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
US20080193643A1 (en) | 2007-02-12 | 2008-08-14 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20080194113A1 (en) | 2006-09-20 | 2008-08-14 | Samsung Electronics Co., Ltd. | Methods and apparatus for semiconductor etching including an electro static chuck |
US7414281B1 (en) | 2003-09-09 | 2008-08-19 | Spansion Llc | Flash memory with high-K dielectric material between substrate and gate |
US20080199977A1 (en) | 2007-02-15 | 2008-08-21 | Air Products And Chemicals, Inc. | Activated Chemical Process for Enhancing Material Properties of Dielectric Films |
USD575713S1 (en) | 2007-06-21 | 2008-08-26 | Ratcliffe Peter W | Vehicle accessory |
US20080205483A1 (en) | 2007-02-26 | 2008-08-28 | Rempe Joy L | High temperature thermocouple design and fabrication |
US20080203487A1 (en) | 2007-02-28 | 2008-08-28 | Joerg Hohage | Field effect transistor having an interlayer dielectric material having increased intrinsic stress |
JP2008198629A (en) | 2007-02-08 | 2008-08-28 | Mitsubishi Electric Corp | Surface treatment method and solar cell |
US20080202689A1 (en) | 2006-12-08 | 2008-08-28 | Tes Co., Ltd. | Plasma processing apparatus |
US20080202416A1 (en) | 2006-01-19 | 2008-08-28 | Provencher Timothy J | High temperature ALD inlet manifold |
USD576001S1 (en) | 2007-02-16 | 2008-09-02 | Brenda Brunderman | Faux brick tool |
US20080216077A1 (en) | 2007-03-02 | 2008-09-04 | Applied Materials, Inc. | Software sequencer for integrated substrate processing system |
JP2008202107A (en) | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | Substrate-treating apparatus |
US20080213696A1 (en) | 2005-10-20 | 2008-09-04 | Agfa Graphics Nv | Negative Working, Heat-Sensitive, Lithographic Printing Plate Precursor |
US20080210162A1 (en) | 2005-03-29 | 2008-09-04 | Hitachi Kokusai Electric Inc | Substrate Processing Apparatus and Substrate Processing System |
US20080214003A1 (en) | 2007-02-21 | 2008-09-04 | Bin Xia | Methods for forming a ruthenium-based film on a substrate |
US20080210278A1 (en) | 2001-08-02 | 2008-09-04 | Takehiko Orii | Substrate processing apparatus |
US20080211423A1 (en) | 2004-12-24 | 2008-09-04 | Minebea Co., Ltd. | Multiple-Light Discharge Lamp Lighting Device |
US20080211526A1 (en) | 2005-07-25 | 2008-09-04 | Kenji Shinma | Wafer holder, heater unit used for wafer prober and having wafer holder, and wafer prober |
US7422653B2 (en) | 2004-07-13 | 2008-09-09 | Applied Materials, Inc. | Single-sided inflatable vertical slit valve |
US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US20080216958A1 (en) | 2007-03-07 | 2008-09-11 | Novellus Systems, Inc. | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same |
US20080216742A1 (en) | 2007-03-09 | 2008-09-11 | Yuji Takebayashi | Substrate processing apparatus |
US20080220619A1 (en) | 2007-03-09 | 2008-09-11 | Asm Japan K.K. | Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation |
US7425224B2 (en) | 2000-06-07 | 2008-09-16 | Tegal Corporation | High pressure chemical vapor trapping method |
US20080223130A1 (en) | 2007-03-13 | 2008-09-18 | Provina Incorporated | Method and device for measuring density of a liquid |
US20080223725A1 (en) | 2002-01-08 | 2008-09-18 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US20080228306A1 (en) | 2004-07-07 | 2008-09-18 | Sensarray Corporation | Data collection and analysis system |
US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
US20080230371A1 (en) | 2007-03-22 | 2008-09-25 | Tokyo Electron Limited | Method and apparatus for extending chamber component life in a substrate processing system |
US20080229811A1 (en) | 2007-03-20 | 2008-09-25 | Kla-Tencor Technologies Corporation | Stabilizing a substrate using a vacuum preload air bearing chuck |
US20080233288A1 (en) | 2007-03-20 | 2008-09-25 | Tokyo Electron Limited | Method of forming crystallographically stabilized doped hafnium zirconium based films |
US20080230352A1 (en) | 2007-03-20 | 2008-09-25 | Yasunari Hirata | Conveyer apparatus |
US20080237572A1 (en) | 2007-03-27 | 2008-10-02 | Chi On Chui | Forming a type i heterostructure in a group iv semiconductor |
US20080242116A1 (en) | 2007-03-30 | 2008-10-02 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
US20080241387A1 (en) | 2007-03-29 | 2008-10-02 | Asm International N.V. | Atomic layer deposition reactor |
US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US20080237604A1 (en) | 2007-03-30 | 2008-10-02 | Husam Niman Alshareef | Plasma nitrided gate oxide, high-k metal gate based cmos device |
US20080241052A1 (en) | 2007-03-29 | 2008-10-02 | Hooper David M | Apparatus, method and system for delivering oxygen-ozone |
US7432476B2 (en) | 2005-05-12 | 2008-10-07 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
US20080248597A1 (en) | 2007-04-06 | 2008-10-09 | Micron Technology, Inc. | Methods for determining a dose of an impurity implanted in a semiconductor substrate and an apparatus for same |
US20080248310A1 (en) | 2007-04-04 | 2008-10-09 | Samsung Sdi Co., Ltd. | Carbon nanotube hybrid system using carbide-derived carbon, a method of making the same, an electron emitter comprising the same, and an electron emission device comprising the electron emitter |
US20080246101A1 (en) | 2007-04-05 | 2008-10-09 | Applied Materials Inc. | Method of poly-silicon grain structure formation |
US20080257102A1 (en) | 2007-04-20 | 2008-10-23 | William Packer | Mechanically retained motorcycle handlebar grips |
US20080257494A1 (en) | 2007-01-31 | 2008-10-23 | Tokyo Electron Limited | Substrate processing apparatus |
US20080260345A1 (en) | 2004-03-08 | 2008-10-23 | Adc Telecommunications, Inc. | Fiber access terminal |
US20080261405A1 (en) | 2007-04-19 | 2008-10-23 | Applied Materials, Inc. | Hydrogen ashing enhanced with water vapor and diluent gas |
US20080260963A1 (en) | 2007-04-17 | 2008-10-23 | Hyungsuk Alexander Yoon | Apparatus and method for pre and post treatment of atomic layer deposition |
US20080264337A1 (en) | 2007-04-02 | 2008-10-30 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US20080264443A1 (en) | 2002-02-05 | 2008-10-30 | Novellus Systems, Inc. | Apparatus and methods for increasing the rate of solute concentration evolution in a supercritical process chamber |
US20080267598A1 (en) | 2004-04-21 | 2008-10-30 | Hitachi Kokusai Electric Inc. | Heat Treating Apparatus |
US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
US20080274369A1 (en) | 2005-04-21 | 2008-11-06 | Lee Eal H | Novel Ruthenium-Based Materials and Ruthenium Alloys, Their Use in Vapor Deposition or Atomic Layer Deposition and Films Produced Therefrom |
US20080272424A1 (en) | 2007-05-03 | 2008-11-06 | Hynix Semiconductor Inc. | Nonvolatile Memory Device Having Fast Erase Speed And Improved Retention Characteristics And Method For Fabricating The Same |
US20080277647A1 (en) | 2004-09-16 | 2008-11-13 | Arizona Board Of Regents, A Body Corporate Acting | Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon |
US20080277656A1 (en) | 2007-01-09 | 2008-11-13 | Sang Hee Park | METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER |
US20080277715A1 (en) | 2000-12-28 | 2008-11-13 | Tadahiro Ohmi | Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device |
US20080276864A1 (en) | 2007-05-09 | 2008-11-13 | Blake Koelmel | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
CN101308794A (en) | 2007-05-15 | 2008-11-19 | 应用材料股份有限公司 | Atomic layer deposition of tungsten material |
US20080282970A1 (en) | 2005-11-16 | 2008-11-20 | Peter Nicholas Heys | Cyclopentadienyl Type Hafnium and Zirconium Precursors and Use Thereof in Atomic Layer Deposition |
US20080286463A1 (en) | 2007-03-01 | 2008-11-20 | Tiner Robin L | Rf shutter |
US20080283962A1 (en) | 2007-05-15 | 2008-11-20 | International Business Machines Corporation | Self-aligned and extended inter-well isolation structure |
US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
US20080289574A1 (en) | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Thermocouple |
US20080291964A1 (en) | 2007-05-22 | 2008-11-27 | Goodrich Control Systems Limited | Temperature Sensing |
US20080289767A1 (en) | 2007-05-23 | 2008-11-27 | Takumi Tandou | Plasma processing apparatus |
US20080289650A1 (en) | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
US20080293198A1 (en) | 2007-03-30 | 2008-11-27 | Nec Electronics Corporation | Method for manufacturing semiconductor device including etching process of silicon nitride film |
US20080299326A1 (en) | 2007-05-30 | 2008-12-04 | Asm Japan K.K. | Plasma cvd apparatus having non-metal susceptor |
US20080295872A1 (en) | 2007-05-30 | 2008-12-04 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US20080298945A1 (en) | 2007-05-31 | 2008-12-04 | Applied Materials, Inc. | Methods and apparatus for extending the reach of a dual scara robot linkage |
US20080299758A1 (en) | 2007-06-04 | 2008-12-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device |
US20080303744A1 (en) | 2007-06-11 | 2008-12-11 | Tokyo Electron Limited | Plasma processing system, antenna, and use of plasma processing system |
US20080305246A1 (en) | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Apparatus for depositing a uniform silicon film and methods for manufacturing the same |
US20080305443A1 (en) | 2007-06-11 | 2008-12-11 | Hiroko Nakamura | Pattern forming method using relacs process |
US20080302303A1 (en) | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
US20080305014A1 (en) | 2007-06-07 | 2008-12-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
USD583395S1 (en) | 2006-12-15 | 2008-12-23 | Tokyo Electron Limited | Cover for a heater stage of a plasma processing apparatus |
US20080314319A1 (en) | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
US20080314892A1 (en) | 2007-06-25 | 2008-12-25 | Graham Robert G | Radiant shield |
US20080317972A1 (en) | 2007-06-21 | 2008-12-25 | Asm International N.V. | Method for depositing thin films by mixed pulsed cvd and ald |
US20080315292A1 (en) | 2007-06-22 | 2008-12-25 | Semiconductor Manufacturing International (Shanghai) Corporation | Atomic Layer Deposition Method and Semiconductor Device Formed by the Same |
US20090004875A1 (en) | 2007-06-27 | 2009-01-01 | Meihua Shen | Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate |
US20090000769A1 (en) | 2007-06-27 | 2009-01-01 | Chun-Hsien Lin | Temperature Controlled Loadlock Chamber |
US20090000550A1 (en) | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Manifold assembly |
US20090011145A1 (en) | 2005-08-24 | 2009-01-08 | Electronics And Telecommunications Research Instit Ute | Method of Manufacturing Vanadium Oxide Thin Film |
US20090011608A1 (en) | 2007-05-15 | 2009-01-08 | Renesas Technology Corp. | Manufacturing method of semiconductor device |
US20090011150A1 (en) | 2004-08-04 | 2009-01-08 | Hyeong-Tag Jeon | Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias |
US7476291B2 (en) | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
US20090017631A1 (en) | 2007-06-01 | 2009-01-15 | Bencher Christopher D | Self-aligned pillar patterning using multiple spacer masks |
US20090017733A1 (en) | 2005-04-19 | 2009-01-15 | Ebara Corporation | Substrate processing apparatus |
JP2009010412A (en) | 2008-08-25 | 2009-01-15 | Japan Science & Technology Agency | Chemical vapor deposition method |
US20090017227A1 (en) | 2007-07-11 | 2009-01-15 | Applied Materials, Inc. | Remote Plasma Source for Pre-Treatment of Substrates Prior to Deposition |
US20090014879A1 (en) | 2007-07-12 | 2009-01-15 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
TW200903625A (en) | 2007-07-04 | 2009-01-16 | Advanced Micro Fab Equip Inc | Multi-station decoupled reactive ion etch chamber |
US7479198B2 (en) | 2005-04-07 | 2009-01-20 | Timothy D'Annunzio | Methods for forming nanofiber adhesive structures |
US20090023229A1 (en) | 2007-07-19 | 2009-01-22 | Asm Japan K.K. | Method for managing uv irradiation for curing semiconductor substrate |
US20090020072A1 (en) | 2007-07-20 | 2009-01-22 | Tokyo Electron Limited | Chemical solution vaporizing tank and chemical solution treating system |
JP2009016815A (en) | 2007-06-08 | 2009-01-22 | Tokyo Electron Ltd | Formation method of fine pattern |
US7482283B2 (en) | 2000-12-12 | 2009-01-27 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
US7482247B1 (en) | 2004-12-30 | 2009-01-27 | Novellus Systems, Inc. | Conformal nanolaminate dielectric deposition and etch bag gap fill process |
US20090029528A1 (en) | 2007-07-26 | 2009-01-29 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US20090029503A1 (en) | 2007-07-27 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
US20090029564A1 (en) | 2005-05-31 | 2009-01-29 | Tokyo Electron Limited | Plasma treatment apparatus and plasma treatment method |
USD585968S1 (en) | 2008-03-06 | 2009-02-03 | West Coast Washers, Inc. | Pipe flashing |
US20090033907A1 (en) | 2007-07-05 | 2009-02-05 | Nikon Corporation | Devices and methods for decreasing residual chucking forces |
US20090036292A1 (en) | 2007-08-02 | 2009-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US20090035946A1 (en) | 2007-07-31 | 2009-02-05 | Asm International N.V. | In situ deposition of different metal-containing films using cyclopentadienyl metal precursors |
US20090035584A1 (en) | 2007-07-30 | 2009-02-05 | Micron Technology, Inc. | Methods for device fabrication using pitch reduction and associated structures |
US20090035947A1 (en) | 2005-06-13 | 2009-02-05 | Hitachi Kokusai Electric Inc. | Manufacturing Method of Semiconductor Device, and Substrate Processing Apparatus |
US20090031954A1 (en) | 2006-02-09 | 2009-02-05 | Kouichi Nishikido | Susceptor and apparatus for manufacturing epitaxial wafer |
US20090035463A1 (en) | 2007-08-03 | 2009-02-05 | Tokyo Electron Limited | Thermal processing system and method for forming an oxide layer on substrates |
US20090035927A1 (en) | 2007-07-30 | 2009-02-05 | Applied Materials, Inc. | Method of forming dielectric layers on a substrate and apparatus therefor |
US7489389B2 (en) | 2003-02-17 | 2009-02-10 | Nikon Corporation | Stage device with frame-shaped member movable in at least three degrees of freedom within a two-dimensional plane |
US20090042344A1 (en) | 2007-06-15 | 2009-02-12 | Amberwave Systems Corporation | InP-Based Transistor Fabrication |
US20090041952A1 (en) | 2007-08-10 | 2009-02-12 | Asm Genitech Korea Ltd. | Method of depositing silicon oxide films |
US20090042408A1 (en) | 2007-08-10 | 2009-02-12 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method and substrate processing apparatus |
US20090039475A1 (en) | 2005-10-14 | 2009-02-12 | Yoshimi Shioya | Apparatus and Method for Manufacturing Semiconductor |
US20090041984A1 (en) | 2007-08-10 | 2009-02-12 | Nano Terra Inc. | Structured Smudge-Resistant Coatings and Methods of Making and Using the Same |
US20090047447A1 (en) | 2005-08-02 | 2009-02-19 | Sawin Herbert H | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor |
US20090047433A1 (en) | 2007-08-13 | 2009-02-19 | Chun-Sik Kim | Substrate processing apparatus and method |
US20090045749A1 (en) | 2005-05-20 | 2009-02-19 | Shibaura Mechatronics Corporation | Plasma generating apparatus and plasma treatment apparatus |
US20090047426A1 (en) | 2007-08-17 | 2009-02-19 | Asm Genitech Korea Ltd. | Deposition apparatus |
US20090045829A1 (en) | 2005-08-04 | 2009-02-19 | Sumitomo Electric Industries, Ltd. | Wafer holder for wafer prober and wafer prober equipped with same |
US7494882B2 (en) | 2006-03-10 | 2009-02-24 | Texas Instruments Incorporated | Manufacturing a semiconductive device using a controlled atomic layer removal process |
US7494267B2 (en) * | 2005-08-30 | 2009-02-24 | Chemglass, Inc. | Reaction block for supporting flasks of different sizes for chemical synthesis on a hot plate stirrer |
US20090050621A1 (en) | 2005-07-27 | 2009-02-26 | Tomoyuki Awazu | Wafer holder, heater unit used for wafer prober having the wafer holder, and wafer prober having the heater unit |
US20090053900A1 (en) | 2006-04-07 | 2009-02-26 | Tokyo Electron Limited | Processing Apparatus and Processing Method |
US20090053906A1 (en) | 2006-07-20 | 2009-02-26 | Hironobu Miya | Semiconductor Device Producing Method and Substrate Processing Apparatus |
US20090052498A1 (en) | 2007-08-24 | 2009-02-26 | Asm America, Inc. | Thermocouple |
US20090053023A1 (en) | 2006-08-25 | 2009-02-26 | Shinji Wakabayashi | Wafer transfer apparatus, wafer transfer method and storage medium |
US7498242B2 (en) | 2005-02-22 | 2009-03-03 | Asm America, Inc. | Plasma pre-treating surfaces for atomic layer deposition |
US7497614B2 (en) | 2005-09-22 | 2009-03-03 | Lam Research Corporation | Apparatus for determining a temperature of a substrate and methods therefor |
US20090061647A1 (en) | 2007-08-27 | 2009-03-05 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp ii process |
US20090061644A1 (en) | 2007-09-05 | 2009-03-05 | Chiang Tony P | Vapor based combinatorial processing |
US20090056629A1 (en) | 2007-09-05 | 2009-03-05 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
US20090057269A1 (en) | 2007-09-05 | 2009-03-05 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
WO2009028619A1 (en) | 2007-08-30 | 2009-03-05 | Tokyo Electron Limited | Treating-gas supply system and treating apparatus |
US20090060480A1 (en) | 2007-09-04 | 2009-03-05 | Sokudo Co., Ltd. | Method and system for controlling bake plate temperature in a semiconductor processing chamber |
US20090056112A1 (en) | 2007-09-03 | 2009-03-05 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck member, method of manufacturing the same, and electrostatic chuck device |
US7501355B2 (en) | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
US7504344B2 (en) | 2004-08-09 | 2009-03-17 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
EP2036600A1 (en) | 2006-07-04 | 2009-03-18 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Apparatus and method for the concentration and dilution of specific gas |
US20090075490A1 (en) | 2007-09-18 | 2009-03-19 | L'air Liquite Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon-containing films |
US20090075491A1 (en) | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
US20090080136A1 (en) | 2007-09-26 | 2009-03-26 | Tokyo Electron Limited | Electrostatic chuck member |
US20090081879A1 (en) | 2007-09-20 | 2009-03-26 | Elpida Memory, Inc. | Method for manufacturing semiconductor device |
US20090087585A1 (en) | 2007-09-28 | 2009-04-02 | Wei Ti Lee | Deposition processes for titanium nitride barrier and aluminum |
US20090085156A1 (en) | 2007-09-28 | 2009-04-02 | Gilbert Dewey | Metal surface treatments for uniformly growing dielectric layers |
US20090087964A1 (en) | 2006-03-20 | 2009-04-02 | Hitachi Kokusai Electric Inc. | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus |
US20090084317A1 (en) | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
US20090087967A1 (en) | 2005-11-14 | 2009-04-02 | Todd Michael A | Precursors and processes for low temperature selective epitaxial growth |
US7514375B1 (en) | 2006-08-08 | 2009-04-07 | Novellus Systems, Inc. | Pulsed bias having high pulse frequency for filling gaps with dielectric material |
US7514058B1 (en) | 2008-05-22 | 2009-04-07 | The Lata Group, Inc. | Apparatus for on-site production of nitrate ions |
US20090093080A1 (en) | 2007-07-10 | 2009-04-09 | Soo Young Choi | Solar cells and methods and apparatuses for forming the same including i-layer and n-layer chamber cleaning |
US20090090382A1 (en) | 2007-10-05 | 2009-04-09 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US20090093094A1 (en) | 2007-10-05 | 2009-04-09 | Zhiyuan Ye | Selective Formation of Silicon Carbon Epitaxial Layer |
US20090093100A1 (en) | 2007-10-09 | 2009-04-09 | Li-Qun Xia | Method for forming an air gap in multilevel interconnect structure |
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
USD590933S1 (en) | 2008-03-31 | 2009-04-21 | Mcp Industries, Inc. | Vent cap device |
US20090104789A1 (en) | 2007-10-22 | 2009-04-23 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
KR20090039936A (en) | 2007-10-19 | 2009-04-23 | 주성엔지니어링(주) | Substrate etching apparatus using remote plasma, and substrate etching method using the same |
US20090104351A1 (en) | 2006-06-20 | 2009-04-23 | Tokyo Electron Limited | Film forming apparatus and method, gas supply device and storage medium |
JP2009088421A (en) | 2007-10-03 | 2009-04-23 | Renesas Technology Corp | Semiconductor device manufacturing method |
US20090104594A1 (en) | 2004-12-29 | 2009-04-23 | Biogen Idec | Bioreactor Process Control System and Method |
US20090108308A1 (en) | 2007-10-31 | 2009-04-30 | Jusung Engineering Co., Ltd | Transistor and method of fabricating the same |
US20090107404A1 (en) | 2004-07-30 | 2009-04-30 | Katten Muchin Rosenman Llp | Epitaxial reactor with susceptor controlled positioning |
US20090112458A1 (en) | 2007-10-30 | 2009-04-30 | Denso Corporation | Navigation system and method for navigating route to destination |
US20090117746A1 (en) | 2007-11-02 | 2009-05-07 | Tokyo Electron Limited | Gas supply device, substrate processing apparatus and substrate processing method |
US20090116936A1 (en) | 2007-10-22 | 2009-05-07 | Hitachi-Kokusai Electric Inc. | Substrate processing apparatus |
US20090115064A1 (en) | 2007-11-01 | 2009-05-07 | Micron Technology, Inc. | Spacer process for on pitch contacts and related structures |
US20090117717A1 (en) | 2007-11-05 | 2009-05-07 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
US20090117723A1 (en) | 2007-11-07 | 2009-05-07 | Samsung Electronics Co., Ltd. | Methods of forming a conductive pattern in semiconductor devices and methods of manufacturing semiconductor devices having a conductive pattern |
JP2009099938A (en) | 2007-09-28 | 2009-05-07 | Tokyo Electron Ltd | Method and apparatus for manufacturing semiconductor device, control program, and program recording medium |
US20090124131A1 (en) | 2007-11-09 | 2009-05-14 | Electronic Controls Design | Thermocouple adapter |
US20090122458A1 (en) | 2007-11-14 | 2009-05-14 | Varian Semiconductor Epuipment Associated, Inc. | Embossed electrostatic chuck |
US20090130331A1 (en) | 2005-08-16 | 2009-05-21 | Hitachi Kokusai Electric Inc. | Method of Forming Thin Film and Method of Manufacturing Semiconductor Device |
US20090130859A1 (en) | 2005-11-18 | 2009-05-21 | Hitachi Kokusai Electric Inc. | Semiconductor Device Manufacturing Method and Substrate Processing Apparatus |
US20090137055A1 (en) | 2005-09-30 | 2009-05-28 | Bognar John A | Measuring nitrogen oxides and other gases by ozone formation |
US20090136683A1 (en) | 2007-11-27 | 2009-05-28 | Asm Japan K.K. | Method of plasma treatment using amplitude-modulated rf power |
US20090136668A1 (en) | 2002-07-23 | 2009-05-28 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US20090136665A1 (en) | 2007-11-27 | 2009-05-28 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
KR20090055443A (en) | 2007-11-28 | 2009-06-02 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
USD593585S1 (en) | 2005-07-29 | 2009-06-02 | Tokyo Electron Limited | Top panel for microwave introduction window of a plasma processing apparatus |
KR20090056475A (en) | 2007-11-30 | 2009-06-03 | 삼성전자주식회사 | Plasma processing apparatus |
US20090142933A1 (en) | 2007-11-29 | 2009-06-04 | Masayoshi Yajima | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
US20090139657A1 (en) | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
US20090142935A1 (en) | 2007-12-03 | 2009-06-04 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
US20090142905A1 (en) | 2007-12-03 | 2009-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
US7544398B1 (en) | 2005-04-26 | 2009-06-09 | The Regents Of The Univesity Of California | Controlled nano-doping of ultra thin films |
USD593969S1 (en) | 2006-10-10 | 2009-06-09 | Tokyo Electron Limited | Processing chamber for manufacturing semiconductors |
US20090147819A1 (en) | 2007-12-07 | 2009-06-11 | Asm America, Inc. | Calibration of temperature control system for semiconductor processing chamber |
US20090146322A1 (en) | 2007-12-07 | 2009-06-11 | Milind Weling | Method of eliminating a lithography operation |
US7547633B2 (en) | 2006-05-01 | 2009-06-16 | Applied Materials, Inc. | UV assisted thermal processing |
US20090155488A1 (en) | 2007-12-18 | 2009-06-18 | Asm Japan K.K. | Shower plate electrode for plasma cvd reactor |
US20090156017A1 (en) | 2007-12-13 | 2009-06-18 | Asm Japan K.K. | Method for forming dielectric film using siloxane-silazane mixture |
US20090155025A1 (en) * | 2007-12-12 | 2009-06-18 | Applied Materials, Inc. | Lift pin for substrate processing |
US20090156015A1 (en) | 2007-12-18 | 2009-06-18 | Asm Genitech Korea Ltd. | Deposition apparatus |
DE102008052750A1 (en) | 2007-12-13 | 2009-06-18 | Samsung Electro - Mechanics Co., Ltd., Suwon-shi | Device for metal organic chemical vapor deposition, comprises reactor with upper- and lower cover, wafer-applying unit with susceptors, heating unit, rotary drive unit, gas supply unit with gas supply connections, and gas output unit |
US7550396B2 (en) | 2006-09-29 | 2009-06-23 | Advanced Micro Devices, Inc. | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device |
US20090159000A1 (en) | 2007-12-20 | 2009-06-25 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
US20090163038A1 (en) | 2006-05-31 | 2009-06-25 | Tokyo Electron Limited | Heat treatment method, heat treatment apparatus and substrate processing apparatus |
US20090162996A1 (en) | 2007-12-21 | 2009-06-25 | Kartik Ramaswamy | Removal of surface dopants from a substrate |
US20090159424A1 (en) | 2007-12-19 | 2009-06-25 | Wei Liu | Dual zone gas injection nozzle |
US20090159002A1 (en) | 2007-12-19 | 2009-06-25 | Kallol Bera | Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution |
US20090162647A1 (en) | 2007-12-21 | 2009-06-25 | Applied Materials, Inc. | Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components |
US20090165715A1 (en) | 2007-12-27 | 2009-07-02 | Oh Jae-Eung | Vapor deposition reactor |
US20090165722A1 (en) | 2007-12-26 | 2009-07-02 | Jusung Engineering Co., Ltd | Apparatus for treating substrate |
US20090165721A1 (en) | 2007-12-27 | 2009-07-02 | Memc Electronic Materials, Inc. | Susceptor with Support Bosses |
US20090166616A1 (en) | 2007-12-26 | 2009-07-02 | Hitachi, Ltd. | Oxide semiconductor device and surface treatment method of oxide semiconductor |
US20090176018A1 (en) | 2008-01-09 | 2009-07-09 | Min Zou | Nano/micro-textured surfaces and methods of making same by aluminum-induced crystallization of amorphous silicon |
US7561982B2 (en) | 2005-11-10 | 2009-07-14 | Shake Awake Products, LLC | Physical attribute recording method and system |
US20090179365A1 (en) | 2008-01-15 | 2009-07-16 | Lerner Alexander N | High temperature vacuum chuck assembly |
USD596476S1 (en) | 2007-07-27 | 2009-07-21 | Daniel P. Welch | Handle bar grip |
US20090186571A1 (en) | 2008-01-22 | 2009-07-23 | Asm America, Inc. | Air ventilation system |
US20090183520A1 (en) | 2006-06-29 | 2009-07-23 | Daikin Industries, Ltd | Expansion valve with refrigerant flow dividing structure and refrigeration unit utilizing the same |
US20090186479A1 (en) | 2008-01-18 | 2009-07-23 | Tokyo Electron Limited | Semiconductor processing system including vaporizer and method for using same |
US7566891B2 (en) | 2006-03-17 | 2009-07-28 | Applied Materials, Inc. | Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors |
US7569193B2 (en) | 2003-12-19 | 2009-08-04 | Applied Materials, Inc. | Apparatus and method for controlled combustion of gaseous pollutants |
US20090197015A1 (en) | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US20090197411A1 (en) | 2008-02-01 | 2009-08-06 | Christian Dussarrat | New metal precursors containing beta-diketiminato ligands |
US20090194233A1 (en) | 2005-06-23 | 2009-08-06 | Tokyo Electron Limited | Component for semicondutor processing apparatus and manufacturing method thereof |
US20090200547A1 (en) | 2008-02-13 | 2009-08-13 | Icemos Technology Ltd. | Trench depth monitor for semiconductor manufacturing |
US20090204403A1 (en) | 2003-05-07 | 2009-08-13 | Omega Engineering, Inc. | Speech generating means for use with signal sensors |
US20090200494A1 (en) | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
WO2009099776A1 (en) | 2008-01-31 | 2009-08-13 | Applied Materials, Inc. | Closed loop mocvd deposition control |
KR20090086790A (en) | 2008-02-11 | 2009-08-14 | (주)소슬 | Apparatus for supporting substrate and apparatus for treating substrate having the same |
US7575968B2 (en) | 2007-04-30 | 2009-08-18 | Freescale Semiconductor, Inc. | Inverse slope isolation and dual surface orientation integration |
US20090206056A1 (en) | 2008-02-14 | 2009-08-20 | Songlin Xu | Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers |
US20090209081A1 (en) | 2007-12-21 | 2009-08-20 | Asm International N.V. | Silicon Dioxide Thin Films by ALD |
US7579285B2 (en) | 2005-07-11 | 2009-08-25 | Imec | Atomic layer deposition method for depositing a layer |
JP2009194248A (en) | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | Pattern forming method, semiconductor manufacturing apparatus and storage medium |
US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
US20090211525A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
US7582575B2 (en) | 1998-02-05 | 2009-09-01 | Asm Japan K.K. | Method for forming insulation film |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
US20090221151A1 (en) | 2008-02-29 | 2009-09-03 | Tokyo Electron Limited | Electrode for plasma processing apparatus, plasma processing apparatus, plasma processing method and storage medium |
US20090217871A1 (en) | 2008-02-28 | 2009-09-03 | Asm Genitech Korea Ltd. | Thin film deposition apparatus and method of maintaining the same |
US20090221149A1 (en) | 2008-02-28 | 2009-09-03 | Hammond Iv Edward P | Multiple port gas injection system utilized in a semiconductor processing system |
US20090227094A1 (en) | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Use of chained implants in solar cells |
US20090223441A1 (en) | 2006-11-22 | 2009-09-10 | Chantal Arena | High volume delivery system for gallium trichloride |
US7589003B2 (en) | 2003-06-13 | 2009-09-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
USD600223S1 (en) | 2008-08-07 | 2009-09-15 | Ravinder Aggarwal | Susceptor ring |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7589028B1 (en) | 2005-11-15 | 2009-09-15 | Novellus Systems, Inc. | Hydroxyl bond removal and film densification method for oxide films using microwave post treatment |
US20090230211A1 (en) | 2008-03-12 | 2009-09-17 | Fujifilm Corporation | Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device |
US7591601B2 (en) | 2007-04-27 | 2009-09-22 | Tokyo Electron Limited | Coater/developer, coating/developing method, and storage medium |
US20090236315A1 (en) | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Shielded lid heater assembly |
US20090236276A1 (en) | 2008-03-21 | 2009-09-24 | Pentair Filtration, Inc. | Modular Drinking Water Filtration System with Adapter Rings for Replaceable Cartridges to Assure Proper Fit |
US20090239386A1 (en) | 2003-09-19 | 2009-09-24 | Kenichi Suzaki | Producing method of semiconductor device and substrate processing apparatus |
US20090236014A1 (en) | 2008-03-20 | 2009-09-24 | Tecvac Limited | Treatment of metal components |
US20090242957A1 (en) | 2008-03-31 | 2009-10-01 | Yi Ma | Atomic layer deposition processes for non-volatile memory devices |
US20090246399A1 (en) | 2008-03-28 | 2009-10-01 | Asm Japan K.K. | Method for activating reactive oxygen species for cleaning carbon-based film deposition |
US20090242130A1 (en) | 2005-11-29 | 2009-10-01 | Tokyo Electron Limited | Plasma processing apparatus |
US20090246374A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
US20090246971A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition |
KR20090105977A (en) | 2007-02-06 | 2009-10-07 | 샌트랄 글래스 컴퍼니 리미티드 | Modifier for low dielectric constant film, and method for production thereof |
US20090250955A1 (en) | 2008-04-07 | 2009-10-08 | Applied Materials, Inc. | Wafer transfer blade |
US20090250004A1 (en) | 2005-12-06 | 2009-10-08 | Ulvac, Inc. | Gas Head and Thin-Film Manufacturing Apparatus |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
JP2009239082A (en) | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | Gas feeding device, treating device, and treating method |
US20090255901A1 (en) | 2005-10-12 | 2009-10-15 | Shogo Okita | Plasma processing apparatus, plasma processing method, and tray |
US20090256127A1 (en) | 2008-04-15 | 2009-10-15 | American Air Liquide, Inc. | Compounds for Depositing Tellurium-Containing Films |
USD602575S1 (en) | 2007-11-19 | 2009-10-20 | Silvano Breda | Shower strainer |
US20090261331A1 (en) | 2008-04-17 | 2009-10-22 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
JP2009251216A (en) | 2008-04-04 | 2009-10-29 | Shin Etsu Chem Co Ltd | Double patterning process |
US20090269506A1 (en) | 2008-04-24 | 2009-10-29 | Seiji Okura | Method and apparatus for cleaning of a CVD reactor |
US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
US20090266296A1 (en) | 2006-03-30 | 2009-10-29 | Hiroyuki Tachibana | Atomic layer growing apparatus |
US20090267135A1 (en) | 2008-04-28 | 2009-10-29 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage device and method of manufacturing the same |
US20090269941A1 (en) | 2008-04-25 | 2009-10-29 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
JP2009252851A (en) | 2008-04-02 | 2009-10-29 | Nikon Corp | Exposure apparatus, and device manufacturing method |
US20090267225A1 (en) | 2008-04-25 | 2009-10-29 | Shingo Eguchi | Semiconductor device and method for manufacturing the same |
US7611980B2 (en) | 2006-08-30 | 2009-11-03 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US7611751B2 (en) | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
US20090275205A1 (en) | 2008-05-02 | 2009-11-05 | Micron Technology, Inc. | Methods of removing silicon oxide and gaseous mixtures for achieving same |
US20090275210A1 (en) | 2008-05-02 | 2009-11-05 | Sunil Shanker | Combinatorial plasma enhanced deposition techniques |
US20090277874A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
US20090277510A1 (en) | 2005-06-17 | 2009-11-12 | Fujikin Incorporated | Fluid control device |
US20090280248A1 (en) | 2008-05-06 | 2009-11-12 | Asm America, Inc. | Porous substrate holder with thinned portions |
US7618226B2 (en) | 2005-06-24 | 2009-11-17 | Asm Japan K.K. | Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same |
US20090286402A1 (en) | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
US20090286405A1 (en) | 2006-06-13 | 2009-11-19 | Tokyo Electron Limited | Shower plate, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate |
US20090286400A1 (en) | 2008-05-13 | 2009-11-19 | Lam Research Corporation | Plasma process with photoresist mask pretreatment |
US20090284156A1 (en) | 2008-05-14 | 2009-11-19 | Applied Materials, Inc. | Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery |
US20090283217A1 (en) | 2008-05-15 | 2009-11-19 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
US7623940B2 (en) | 2006-06-02 | 2009-11-24 | The Boeing Company | Direct-manufactured duct interconnects |
US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
US7621672B2 (en) | 2007-03-19 | 2009-11-24 | Babcock & Wilcox Technical Services Y-12, Llc | Thermocouple shield |
US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US20090291566A1 (en) | 2005-08-05 | 2009-11-26 | Masaaki Ueno | Substrate Processing Apparatus, Coolant Gas Supply Nozzle and Semiconductor Device Manufacturing Method |
US20090289300A1 (en) | 2007-07-27 | 2009-11-26 | Yuichiro Sasaki | Semiconductor device and method for producing the same |
US7625820B1 (en) | 2006-06-21 | 2009-12-01 | Novellus Systems, Inc. | Method of selective coverage of high aspect ratio structures with a conformal film |
US20090297710A1 (en) | 2008-05-27 | 2009-12-03 | Picosun Oy | Methods and apparatus for deposition reactors |
US20090297731A1 (en) | 2008-05-30 | 2009-12-03 | Asm Japan K.K. | Apparatus and method for improving production throughput in cvd chamber |
US20090297696A1 (en) | 2008-05-29 | 2009-12-03 | Viljami Pore | Methods for forming conductive titanium oxide thin films |
US7629277B2 (en) | 2005-11-23 | 2009-12-08 | Honeywell International Inc. | Frag shield |
US20090302434A1 (en) | 2008-06-05 | 2009-12-10 | American Air Liquide, Inc. | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films |
US20090302002A1 (en) | 2008-02-29 | 2009-12-10 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
US20090304558A1 (en) | 2007-04-26 | 2009-12-10 | John Madison Patton | Apparatus, system, and method for generating a gas from solid reactant pouches |
US7632549B2 (en) | 2008-05-05 | 2009-12-15 | Asm Japan K.K. | Method of forming a high transparent carbon film |
US20090308315A1 (en) | 2008-06-13 | 2009-12-17 | Asm International N.V. | Semiconductor processing apparatus with improved thermal characteristics and method for providing the same |
US20090308425A1 (en) | 2008-06-17 | 2009-12-17 | Asm America, Inc. | Thermocouple |
CN101609858A (en) | 2008-06-20 | 2009-12-23 | 福建钧石能源有限公司 | Membrane deposition method |
WO2009154889A2 (en) | 2008-06-20 | 2009-12-23 | Applied Materials, Inc. | Gas distribution showerhead skirt |
US20090315093A1 (en) | 2008-04-16 | 2009-12-24 | Asm America, Inc. | Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds |
US20090314309A1 (en) | 2008-06-19 | 2009-12-24 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
US20090314208A1 (en) | 2008-06-24 | 2009-12-24 | Applied Materials, Inc. | Pedestal heater for low temperature pecvd application |
US20090317214A1 (en) | 2008-06-23 | 2009-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Novel wafer's ambiance control |
USD606952S1 (en) | 2009-01-16 | 2009-12-29 | Asm Genitech Korea Ltd. | Plasma inducing plate for semiconductor deposition apparatus |
US7640142B2 (en) | 2005-07-28 | 2009-12-29 | Nuflare Technology, Inc. | Position measurement apparatus and method and pattern forming apparatus and writing method |
US20090320754A1 (en) | 2006-08-23 | 2009-12-31 | Horiba Stec, Co., Ltd. | Integrated gas panel apparatus |
US20090325469A1 (en) | 2008-06-30 | 2009-12-31 | Semes Co., Ltd. | Substrate supporting unit and single type substrate polishing apparatus using the same |
US20090324989A1 (en) | 2008-05-29 | 2009-12-31 | Gregoire Etienne Witz | Multilayer thermal barrier coating |
US20090325391A1 (en) | 2008-06-30 | 2009-12-31 | Asm International Nv | Ozone and teos process for silicon oxide deposition |
US20090320881A1 (en) | 2005-11-23 | 2009-12-31 | The Boc Group, Inc. | Use of spectroscopic techniques to monitor and control reactant gas input into a pre-pump reactive gas injection system |
US20090324971A1 (en) | 2006-06-16 | 2009-12-31 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
US20100003406A1 (en) | 2008-07-03 | 2010-01-07 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
US20100000608A1 (en) | 2006-08-03 | 2010-01-07 | Hitachi Metals, Ltd. | Flow rate control using mass flow rate control device |
US20100001409A1 (en) | 2006-11-09 | 2010-01-07 | Nxp, B.V. | Semiconductor device and method of manufacturing thereof |
US7645484B2 (en) | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
KR100936694B1 (en) | 2007-12-27 | 2010-01-13 | 주식회사 케이씨텍 | Atomic layer deposition apparatus having palasma generating portion |
US20100006923A1 (en) | 2008-07-08 | 2010-01-14 | Ryota Fujitsuka | Semiconductor device and method for manufacturing the same |
US20100006031A1 (en) | 2008-07-08 | 2010-01-14 | Jusung Engineering Co., Ltd. | Gas distribution plate and substrate treating apparatus including the same |
US20100008656A1 (en) | 2008-07-11 | 2010-01-14 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
US7648895B2 (en) | 2003-10-20 | 2010-01-19 | Tokyo Electron Limited | Vertical CVD apparatus for forming silicon-germanium film |
US20100012036A1 (en) | 2008-07-11 | 2010-01-21 | Hugo Silva | Isolation for multi-single-wafer processing apparatus |
US20100012153A1 (en) | 2006-07-27 | 2010-01-21 | Takamitsu Shigemoto | Method of cleaning film forming apparatus and film forming apparatus |
US20100015813A1 (en) | 2008-07-17 | 2010-01-21 | Micron Technology, Inc. | Gap processing |
US20100014479A1 (en) | 2004-06-01 | 2010-01-21 | Myeong Cheol Kim | Method and apparatus for providing enhanced messages on common control channel in wireless communication system |
US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651269B2 (en) | 2007-07-19 | 2010-01-26 | Lam Research Corporation | Temperature probes having a thermally isolated tip |
US7651583B2 (en) | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US20100022097A1 (en) | 2006-02-27 | 2010-01-28 | Youtec Co., Ltd. | Vaporizer, semiconductor production apparatus and process of semiconductor production |
US20100018913A1 (en) | 2006-12-27 | 2010-01-28 | Holger Blum | Filter and sterilization apparatus |
US20100025766A1 (en) | 2006-12-15 | 2010-02-04 | Nxp, B.V. | Transistor device and method of manufacturing such a transistor device |
US20100025796A1 (en) | 2008-08-04 | 2010-02-04 | Amir Massoud Dabiran | Microchannel plate photocathode |
US20100024727A1 (en) | 2008-08-04 | 2010-02-04 | Samsung Electro-Mechanics Co., Ltd | Showerhead and chemical vapor deposition apparatus including the same |
US20100024872A1 (en) | 2006-12-27 | 2010-02-04 | Katsushi Kishimoto | Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus, and semiconductor device manufactured using such method and apparatus |
USD609655S1 (en) | 2008-10-03 | 2010-02-09 | Ngk Insulators, Ltd. | Electrostatic chuck |
USD609652S1 (en) | 2008-07-22 | 2010-02-09 | Tokyo Electron Limited | Wafer attracting plate |
US20100032842A1 (en) | 2008-08-07 | 2010-02-11 | Texas Instruments Incorporated | MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS |
US20100032587A1 (en) | 2008-07-17 | 2010-02-11 | Hosch Jimmy W | Electron beam exciter for use in chemical analysis in processing systems |
US20100031884A1 (en) | 2008-08-07 | 2010-02-11 | Asm America, Inc. | Susceptor ring |
US20100034719A1 (en) | 2008-08-06 | 2010-02-11 | Christian Dussarrat | Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition |
KR20100015073A (en) | 2008-08-04 | 2010-02-12 | 한국과학기술원 | Method for manufacturing thin film transistors based on titanium oxides as active layer and thin film transistors thereof |
US7661299B2 (en) | 2007-01-30 | 2010-02-16 | Toyota Jidosha Kabushiki Kaisha | Wheel state monitoring system and wheel state detecting apparatus |
US7662689B2 (en) | 2003-12-23 | 2010-02-16 | Intel Corporation | Strained transistor integration for CMOS |
US20100041179A1 (en) | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Forming Substrate Structure by Filling Recesses with Deposition Material |
US20100038687A1 (en) | 2008-08-14 | 2010-02-18 | Jason Klaus | Selective deposition of amorphous silicon films on metal gates |
US20100041243A1 (en) | 2008-08-12 | 2010-02-18 | Air Products And Chemicals, Inc. | Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same |
US20100040441A1 (en) | 2008-08-13 | 2010-02-18 | Tokyo Electron Limited | Foup opening/closing device and probe apparatus |
KR20100020834A (en) | 2008-08-13 | 2010-02-23 | 주식회사 동부하이텍 | Back metal process chamber |
US20100055442A1 (en) | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
US20100050943A1 (en) | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus and substrate processing apparatus |
US20100055316A1 (en) | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium |
US20100051597A1 (en) | 2008-08-27 | 2010-03-04 | Shinya Morita | Substrate processing apparatus and method of manufacturing semiconductor device |
US20100055318A1 (en) | 2008-08-29 | 2010-03-04 | Veeco Instruments Inc. | Wafer carrier with varying thermal resistance |
US20100055898A1 (en) | 2008-09-04 | 2010-03-04 | Shuo-Che Chang | Method for fabricating an integrated circuit |
US20100055312A1 (en) | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium |
US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
US20100058984A1 (en) | 2008-09-10 | 2010-03-11 | Tetsuya Marubayashi | Substrate Processing Apparatus |
US7678197B2 (en) | 2002-08-09 | 2010-03-16 | Sumitomo Osaka Cement Co., Ltd. | Susceptor device |
US7678715B2 (en) | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
US20100065758A1 (en) | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US20100068383A1 (en) | 2008-09-17 | 2010-03-18 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and computer readable storage medium |
US20100068891A1 (en) | 2006-11-09 | 2010-03-18 | Masanobu Hatanaka | Method of forming barrier film |
US20100068009A1 (en) | 2008-09-12 | 2010-03-18 | Shingo Kimura | Vacuum processing apparatus |
US20100068414A1 (en) | 2008-09-12 | 2010-03-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
CN101681873A (en) | 2007-01-31 | 2010-03-24 | 先进微装置公司 | Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride |
US20100075037A1 (en) | 2008-09-22 | 2010-03-25 | Marsh Eugene P | Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods |
US20100075488A1 (en) | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism |
US20100075507A1 (en) | 2008-09-22 | 2010-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices |
KR20100032812A (en) | 2009-05-11 | 2010-03-26 | 주식회사 테스 | Cvd apparatus and substrate processing system |
US20100078601A1 (en) | 2008-03-31 | 2010-04-01 | American Air Liquide, Inc. | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films |
US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US20100078746A1 (en) | 2008-10-01 | 2010-04-01 | Oh-Jin Jung | Semiconductor device and method of manufacturing the same |
US20100081094A1 (en) | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Mask pattern forming method, fine pattern forming method, and film deposition apparatus |
US7690881B2 (en) | 2006-08-30 | 2010-04-06 | Asm Japan K.K. | Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus |
US7692171B2 (en) | 2006-03-17 | 2010-04-06 | Andrzei Kaszuba | Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors |
US20100086703A1 (en) | 2008-10-03 | 2010-04-08 | Veeco Compound Semiconductor, Inc. | Vapor Phase Epitaxy System |
US20100087069A1 (en) | 2008-10-07 | 2010-04-08 | Hitachi-Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
US7695808B2 (en) | 2005-11-07 | 2010-04-13 | 3M Innovative Properties Company | Thermal transfer coating |
USD613829S1 (en) | 2006-09-13 | 2010-04-13 | Hayward Industries, Inc. | Circular suction outlet assembly cover |
US20100089320A1 (en) | 2008-10-13 | 2010-04-15 | Asm Genitech Korea Ltd. | Plasma processing member, deposition apparatus including the same, and depositing method using the same |
US20100090149A1 (en) | 2008-10-01 | 2010-04-15 | Compressor Engineering Corp. | Poppet valve assembly, system, and apparatus for use in high speed compressor applications |
US20100092679A1 (en) | 2008-10-14 | 2010-04-15 | Samsung Electronics Co., Ltd. | Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer |
US20100092696A1 (en) | 2008-10-14 | 2010-04-15 | Asm Japan K.K. | Method for forming metal film by ald using beta-diketone metal complex |
US20100094430A1 (en) | 2006-10-12 | 2010-04-15 | Susan Pran Krumdieck | Device |
US20100093187A1 (en) | 2008-10-14 | 2010-04-15 | Applied Materials, Inc. | Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
US20100089870A1 (en) | 2007-03-22 | 2010-04-15 | Mitsuru Hiroshima | Plasma processing apparatus and plasma processing method |
USD614268S1 (en) | 2007-11-19 | 2010-04-20 | Silvano Breda | Shower strainer |
USD614258S1 (en) | 2006-04-06 | 2010-04-20 | Anemos Company Ltd. | Motionless mixer |
USD614267S1 (en) | 2007-09-10 | 2010-04-20 | Silvano Breda | Circular shower strainer |
US20100098862A1 (en) | 2008-10-21 | 2010-04-22 | Intevac, Inc. | Method and apparatus for precision surface modification in nano-imprint lithography |
USD614593S1 (en) | 2008-07-21 | 2010-04-27 | Asm Genitech Korea Ltd | Substrate support for a semiconductor deposition apparatus |
US20100102417A1 (en) | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
US20100101728A1 (en) | 2007-03-29 | 2010-04-29 | Tokyo Electron Limited | Plasma process apparatus |
US20100105936A1 (en) | 2005-08-04 | 2010-04-29 | Tosoh Corporation | Metal-containing compound, its production method, metal-containing thin film, and its formation method |
JP2010097834A (en) | 2008-10-17 | 2010-04-30 | Ushio Inc | Backlight unit |
US20100111648A1 (en) | 2007-01-31 | 2010-05-06 | Tokyo Electron Limited | Substrate processing apparatus and particle adhesion preventing method |
US20100112496A1 (en) | 2007-06-08 | 2010-05-06 | Tokyo Electron Limited | Patterning method |
US7712435B2 (en) | 2004-09-28 | 2010-05-11 | Asm Japan K.K. | Plasma processing apparatus with insulated gas inlet pore |
US7713874B2 (en) | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
US20100121100A1 (en) | 2008-11-12 | 2010-05-13 | Daniel Travis Shay | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
US20100119439A1 (en) | 2008-11-07 | 2010-05-13 | Tokyo Electron Limited | Ozone gas concentration measurement method, ozone gas concentration measurement system, and substrate processing apparatus |
US20100116208A1 (en) | 2008-11-13 | 2010-05-13 | Applied Materials, Inc. | Ampoule and delivery system for solid precursors |
US20100120261A1 (en) | 2008-11-12 | 2010-05-13 | Microchip Technology Incorporated | Method of Nonstoichiometric CVD Dielectric Film Surface Passivation for Film Roughness Control |
US20100116207A1 (en) | 2008-11-07 | 2010-05-13 | Asm America, Inc. | Reaction chamber |
US20100119727A1 (en) | 2007-03-27 | 2010-05-13 | Tokyo Electron Limited | Film forming apparatus, film forming method and storage medium |
US20100119844A1 (en) | 2008-11-12 | 2010-05-13 | Applied Materials, Inc. | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas |
US20100116209A1 (en) | 2008-11-10 | 2010-05-13 | Tokyo Electron Limited | Film deposition apparatus |
US7718930B2 (en) | 2003-04-07 | 2010-05-18 | Tokyo Electron Limited | Loading table and heat treating apparatus having the loading table |
US7720560B2 (en) | 2007-07-26 | 2010-05-18 | International Business Machines Corporation | Semiconductor manufacturing process monitoring |
US7716993B2 (en) | 2006-03-07 | 2010-05-18 | Ckd Corporation | Gas flow rate verification unit |
US20100124621A1 (en) | 2008-11-14 | 2010-05-20 | Asm Japan K.K. | Method of Forming Insulation Film by Modified PEALD |
US20100124618A1 (en) | 2008-11-14 | 2010-05-20 | Asm Japan K.K. | Method of Forming Insulation Film Using Plasma Treatment Cycles |
US20100124610A1 (en) | 2008-11-19 | 2010-05-20 | Tokyo Electron Limited | Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium |
USD616394S1 (en) | 2009-03-06 | 2010-05-25 | Tokyo Electron Limited | Support of wafer boat for manufacturing semiconductor wafers |
US7725012B2 (en) | 2007-01-19 | 2010-05-25 | Asm America, Inc. | Movable radiant heat sources |
US7723648B2 (en) | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
USD616390S1 (en) | 2009-03-06 | 2010-05-25 | Tokyo Electron Limited | Quartz cover for manufacturing semiconductor wafers |
US20100126605A1 (en) | 2006-08-08 | 2010-05-27 | Edwards Limited | Apparatus for conveying a waste stream |
US20100126539A1 (en) | 2008-11-26 | 2010-05-27 | Semes Co., Ltd. | Spin head, apparatus for treating substrate, and method for treating substrate |
US20100129670A1 (en) | 2008-11-12 | 2010-05-27 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
US20100130105A1 (en) | 2008-11-26 | 2010-05-27 | Semes Co., Ltd. | Substrate supporting unit, and apparatus and method for polishing substrate using the same |
US20100129990A1 (en) | 2007-08-03 | 2010-05-27 | Shin-Etsu Handotai Co. Ltd | Susceptor and method for manufacturing silicon epitaxial wafer |
US20100129548A1 (en) | 2003-06-27 | 2010-05-27 | Sundew Technologies, Llc | Ald apparatus and method |
US20100126666A1 (en) | 2008-11-27 | 2010-05-27 | Takumi Tandou | Plasma processing apparatus |
US20100126415A1 (en) | 2007-04-16 | 2010-05-27 | Ulvac, Inc. | Conveyor and deposition apparatus, and maintenance method thereof |
US7727880B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
US7727864B2 (en) | 2006-11-01 | 2010-06-01 | Asm America, Inc. | Controlled composition using plasma-enhanced atomic layer deposition |
US20100133255A1 (en) | 2008-10-07 | 2010-06-03 | Applied Materials, Inc. | Apparatus for efficient removal of halogen residues from etched substrates |
US20100136216A1 (en) | 2008-12-01 | 2010-06-03 | Applied Materials, Inc. | Gas distribution blocker apparatus |
JP2010123843A (en) | 2008-11-21 | 2010-06-03 | Kyocera Corp | Electrostatic chuck |
US20100134023A1 (en) | 2008-12-01 | 2010-06-03 | Mills Robert L | Methods and systems for dimmable fluorescent lighting |
US20100143609A1 (en) | 2008-12-09 | 2010-06-10 | Asm Japan K.K. | Method for forming low-carbon cvd film for filling trenches |
US20100144968A1 (en) | 2006-05-26 | 2010-06-10 | Ineos Manufacturing Belgium Nv | Slurry phase polymerisation process |
US20100145547A1 (en) | 2008-12-08 | 2010-06-10 | Asm America, Inc. | Thermocouple |
US20100140221A1 (en) | 2008-12-09 | 2010-06-10 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
US20100144162A1 (en) | 2009-01-21 | 2010-06-10 | Asm Japan K.K. | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD |
US20100140684A1 (en) | 2008-12-10 | 2010-06-10 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing the same |
US20100144150A1 (en) | 2008-12-04 | 2010-06-10 | Micron Technology, Inc. | Methods of Fabricating Substrates |
US7737035B1 (en) | 2006-03-31 | 2010-06-15 | Novellus Systems, Inc. | Dual seal deposition process chamber and process |
US7736600B2 (en) | 2005-10-31 | 2010-06-15 | Applied Materials, Inc. | Apparatus for manufacturing a process abatement reactor |
US20100147396A1 (en) | 2008-12-15 | 2010-06-17 | Asm Japan K.K. | Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus |
US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
US20100159638A1 (en) | 2008-12-24 | 2010-06-24 | Samsung Electronics Co., Ltd. | Method of fabricating nonvolatile memory device |
US7745346B2 (en) | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
US20100168404A1 (en) | 2007-04-13 | 2010-07-01 | The Board Of Trustees Of The University Of Illinoi | Metal Complex Compositions and Methods for Making Metal-Containing Films |
US20100166630A1 (en) | 2008-12-23 | 2010-07-01 | Mks Instruments, Inc. | Reactive chemical containment system |
US20100163937A1 (en) | 2008-12-31 | 2010-07-01 | Scott Bruce Clendenning | Methods of forming nickel sulfide film on a semiconductor device |
US20100163187A1 (en) | 2008-12-26 | 2010-07-01 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20100162956A1 (en) | 2005-08-05 | 2010-07-01 | Seishi Murakami | Substrate Processing Apparatus and Substrate Mount Table Used in the Apparatus |
US20100163524A1 (en) | 2008-12-26 | 2010-07-01 | Hideki Arai | Method for manufacturing susceptor |
US7749563B2 (en) | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
US7748760B2 (en) | 2006-10-27 | 2010-07-06 | Daihen Corporation | Work holding mechanism |
KR20100077442A (en) | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | Showerhead and atomic layer deposition apparatus having the same |
US20100170441A1 (en) | 2006-07-10 | 2010-07-08 | Won Seok-Jun | Method of Forming Metal Oxide and Apparatus for Performing the Same |
US20100173432A1 (en) | 2009-01-08 | 2010-07-08 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US20100170868A1 (en) | 2009-01-07 | 2010-07-08 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
KR20100079920A (en) | 2008-12-31 | 2010-07-08 | 엘아이지에이디피 주식회사 | Apparatus for joining of substrate |
US7753584B2 (en) | 2006-03-31 | 2010-07-13 | Mesoscribe Technologies, Inc. | Thermocouples |
US7754621B2 (en) | 2000-04-14 | 2010-07-13 | Asm International N.V. | Process for producing zirconium oxide thin films |
US20100178423A1 (en) | 2009-01-13 | 2010-07-15 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
US20100178137A1 (en) | 2009-01-11 | 2010-07-15 | Applied Materials, Inc. | Systems, apparatus and methods for moving substrates |
US7758698B2 (en) | 2006-11-28 | 2010-07-20 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US20100184302A1 (en) | 2009-01-21 | 2010-07-22 | Asm Japan K.K. | Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD |
US20100183825A1 (en) | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
US20100180819A1 (en) | 2007-04-17 | 2010-07-22 | Ulvac, Inc. | Film-forming apparatus |
US7763869B2 (en) | 2007-03-23 | 2010-07-27 | Asm Japan K.K. | UV light irradiating apparatus with liquid filter |
US20100189923A1 (en) | 2009-01-29 | 2010-07-29 | Asm Japan K.K. | Method of forming hardmask by plasma cvd |
US20100186669A1 (en) | 2008-12-29 | 2010-07-29 | K.C. Tech Co., Ltd. | Atomic layer deposition apparatus |
US20100195690A1 (en) | 2007-03-16 | 2010-08-05 | Koninklijke Philips Electronics N.V. | Vertical extended cavity surface emission laser and method for manufacturing a light emitting component of the same |
US20100193501A1 (en) | 2009-02-04 | 2010-08-05 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
US20100197107A1 (en) | 2009-02-03 | 2010-08-05 | Kabushiki Kaisha Toshiba | Method of fabricating semiconductor device |
US20100193955A1 (en) | 2009-02-02 | 2010-08-05 | Asm America, Inc. | Plasma-enhanced atomic layer deposition of conductive material over dielectric layers |
US20100195392A1 (en) | 2009-02-03 | 2010-08-05 | Micron Technology, Inc. | Capacitor structure having improved area efficiency, a memory device including the same, and a method of forming the same |
US7771796B2 (en) | 2004-11-09 | 2010-08-10 | Tokyo Electron Limited | Plasma processing method and film forming method |
US20100202860A1 (en) | 2009-02-09 | 2010-08-12 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US20100203242A1 (en) | 2009-02-06 | 2010-08-12 | Applied Materials, Inc. | self-cleaning susceptor for solar cell processing |
US20100206767A1 (en) | 2007-07-11 | 2010-08-19 | Shin-Etsu Polymer Co., Ltd. | Lid body for substrate storage container and substrate storage container |
US20100209598A1 (en) | 2009-02-13 | 2010-08-19 | Advanced Technology Materials, Inc. | IN SITU GENERATION OF RuO4 FOR ALD OF Ru AND Ru RELATED MATERIALS |
US20100210108A1 (en) | 2009-02-13 | 2010-08-19 | Tokyo Electron Limited | Radiation-assisted selective deposition of metal-containing cap layers |
US7780440B2 (en) | 2004-10-19 | 2010-08-24 | Canon Anelva Corporation | Substrate supporting/transferring tray |
US7780789B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
US20100219757A1 (en) | 2009-02-27 | 2010-09-02 | Souheil Benzerrouk | Method and Apparatus of Providing Power to Ignite and Sustain a Plasma in a Reactive Gas Generator |
US20100221452A1 (en) | 2005-07-09 | 2010-09-02 | Bang-Kwon Kang | Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma |
US7790633B1 (en) | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
US7789559B2 (en) | 2006-09-06 | 2010-09-07 | Kistler Holding Ag | Temperature sensor with processable front |
US20100224130A1 (en) | 2005-06-08 | 2010-09-09 | Jacob Smith | Rotating substrate support and methods of use |
US20100227458A1 (en) | 2009-03-05 | 2010-09-09 | Chung Yun-Mo | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
WO2010100702A1 (en) | 2009-03-04 | 2010-09-10 | 富士電機ホールディングス株式会社 | Film forming method and film forming apparatus |
US20100229795A1 (en) | 2009-03-10 | 2010-09-16 | Hitach-Kokusai Electric Inc. | Substrate processing apparatus |
JP2010205967A (en) | 2009-03-04 | 2010-09-16 | Tokyo Electron Ltd | Plasma etching method, plasma etching device, and computer storage medium |
US20100233885A1 (en) | 2009-03-13 | 2010-09-16 | Tokyo Electron Limited | Substrate processing method |
US20100230051A1 (en) | 2009-03-10 | 2010-09-16 | Tokyo Electron Limited | Shower head and plasma processing apparatus having same |
US20100230863A1 (en) | 2006-12-19 | 2010-09-16 | Koninklijke Philips Electronics N.V. | System for and method of heating objects in a production line |
US20100233886A1 (en) | 2009-03-13 | 2010-09-16 | Air Products And Chemicals, Inc. | Dielectric Films Comprising Silicon And Methods For Making Same |
US20100229965A1 (en) | 2009-03-12 | 2010-09-16 | Horiba Stec, Co., Ltd. | Mass flow meter, mass flow controller, mass flow meter system and mass flow control system containing the mass flow meter and the mass flow controller |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7799300B2 (en) | 1999-07-20 | 2010-09-21 | Asm International N.V. | Method and apparatus for removing substances from gases |
US7799706B2 (en) | 2008-02-11 | 2010-09-21 | Sungkyunkwan University Foundation For Corporate Collaboration | Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same |
US20100236691A1 (en) | 2009-03-18 | 2010-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus and Manufacturing Method of Lighting Device |
US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
WO2010110558A2 (en) | 2009-03-23 | 2010-09-30 | 주식회사 테라세미콘 | In-line heat treatment apparatus |
US20100246630A1 (en) | 2009-03-31 | 2010-09-30 | Rosemount Inc. | Thermocouple temperature sensor with connection detection circuitry |
US20100244688A1 (en) | 2007-11-28 | 2010-09-30 | Koninklijke Philips Electronics N.V. | Dielectric barrier discharge lamp |
US20100248465A1 (en) | 2009-03-24 | 2010-09-30 | In-Sun Yi | Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same |
US20100243166A1 (en) | 2009-03-31 | 2010-09-30 | Tokyo Electron Limited | Gas flow path structure and substrate processing apparatus |
US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
US7806587B2 (en) | 2004-09-29 | 2010-10-05 | Citizen Holdings Co., Ltd. | Electronic clinical thermometer and method of producing the same |
US7807566B2 (en) | 2007-12-07 | 2010-10-05 | Asm Japan K.K. | Method for forming dielectric SiOCH film having chemical stability |
US20100255196A1 (en) | 2007-05-09 | 2010-10-07 | Leybold Optics Gmbh | Treatment system for flat substrates |
US20100255658A1 (en) | 2009-04-07 | 2010-10-07 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
US20100252434A1 (en) | 2007-08-28 | 2010-10-07 | University Of Florida Research Foundation, Inc. | Bio-Sensor Using Gated Electrokinetic Transport |
US20100255625A1 (en) | 2007-09-07 | 2010-10-07 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
US20100255198A1 (en) | 2006-08-31 | 2010-10-07 | Advanced Technology Materials, Inc. | Solid precursor-based delivery of fluid utilizing controlled solids morphology |
US20100255218A1 (en) | 2009-04-01 | 2010-10-07 | Asm Japan K.K. | Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature |
US20100259152A1 (en) | 2007-12-17 | 2010-10-14 | Orc Manufacturing Co., Ltd. | Discharge lamp |
WO2010118051A2 (en) | 2009-04-06 | 2010-10-14 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US20100258809A1 (en) | 2007-10-18 | 2010-10-14 | Nxp B.V. | Method of manufacturing localized semiconductor-on-insulator (soi) structures in a bulk semidonductor wafer |
US20100267224A1 (en) | 2009-04-20 | 2010-10-21 | Applied Materials, Inc. | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
US20100266765A1 (en) | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
US20100267248A1 (en) | 2009-04-20 | 2010-10-21 | Applied Materials, Inc. | Post Treatment Methods for Oxide Layers on Semiconductor Devices |
USD625977S1 (en) | 2010-02-25 | 2010-10-26 | Vertex Stone and Chinaware Ltd. | Spacer tool |
US20100270675A1 (en) | 1998-06-11 | 2010-10-28 | Oki Semiconductor Co., Ltd. | Semiconductor device having damascene interconnection structure that prevents void formation between interconnections having transparent dielectric substrate |
US7825040B1 (en) | 2009-06-22 | 2010-11-02 | Asm Japan K.K. | Method for depositing flowable material using alkoxysilane or aminosilane precursor |
US20100279512A1 (en) | 2007-11-14 | 2010-11-04 | Tokyo Electron Limited | Plasma processing apparatus and method for plasma-processing semiconductor substrate |
JP2010251444A (en) | 2009-04-14 | 2010-11-04 | Shin Etsu Handotai Co Ltd | Method of manufacturing soi wafer |
US20100279008A1 (en) | 2007-09-12 | 2010-11-04 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
JP2010255218A (en) | 2009-04-22 | 2010-11-11 | Jfe Galvanizing & Coating Co Ltd | Fitting-type folded-plate roofing material |
US20100285319A1 (en) | 2008-01-07 | 2010-11-11 | Soonjong Kwak | Method for fabrication of transparent gas barrier film using plasma surface treatment and transparent gas barrier film fabricated thereby |
US20100282645A1 (en) | 2007-10-31 | 2010-11-11 | China Petroleum & Chemical Corporation | Pre-passivation process for a continuous reforming apparatus, and passivation process for a continuous reforming apparatus during the initial reacation |
US20100282170A1 (en) | 2007-12-06 | 2010-11-11 | Tsuyoshi Nishizawa | Vapor phase growth susceptor and vapor phase growth apparatus |
WO2010129431A2 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Thermocouple |
US20100282163A1 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
WO2010129430A1 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Smart temperature measuring device |
US20100285237A1 (en) | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
KR20100122701A (en) | 2009-05-13 | 2010-11-23 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
US20100294199A1 (en) | 2009-04-21 | 2010-11-25 | Applied Materials, Inc. | Cvd apparatus for improved film thickness non-uniformity and particle performance |
US20100297391A1 (en) | 2004-02-25 | 2010-11-25 | General Nanotechnoloy Llc | Diamond capsules and methods of manufacture |
US7842622B1 (en) | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
US7842518B2 (en) | 2006-11-02 | 2010-11-30 | Kabushiki Kaisha Toshiba | Method for fabricating semiconductor device |
US20100304047A1 (en) | 2008-06-02 | 2010-12-02 | Air Products And Chemicals, Inc. | Low Temperature Deposition of Silicon-Containing Films |
US20100301752A1 (en) | 2009-05-28 | 2010-12-02 | Osram Sylvania Inc. | Resetting an electronic ballast in the event of fault |
US7851232B2 (en) | 2006-10-30 | 2010-12-14 | Novellus Systems, Inc. | UV treatment for carbon-containing low-k dielectric repair in semiconductor processing |
US7850449B2 (en) | 2006-07-13 | 2010-12-14 | Samsung Electronics Co., Ltd. | Heat treatment equipment |
US20100317177A1 (en) | 2003-10-10 | 2010-12-16 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
US20100317198A1 (en) | 2009-06-12 | 2010-12-16 | Novellus Systems, Inc. | Remote plasma processing of interface surfaces |
KR20100132779A (en) | 2009-06-10 | 2010-12-20 | 주성엔지니어링(주) | Method for manufacturing thin film and apparatus for the same |
US20100322604A1 (en) | 2006-10-10 | 2010-12-23 | Kyle Fondurulia | Precursor delivery system |
US20100322822A1 (en) | 2009-06-19 | 2010-12-23 | Abbott Laboratories | System for managing inventory of bulk liquids |
US7858533B2 (en) | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
USD629874S1 (en) | 2009-11-23 | 2010-12-28 | Ty Gerard Hermans | Garbage disposal cover with scraper |
US7858898B2 (en) | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
US7858519B2 (en) | 2007-11-27 | 2010-12-28 | Imec | Integrated circuit and manufacturing method of copper germanide and copper silicide as copper capping layer |
US20100326358A1 (en) | 2008-02-12 | 2010-12-30 | Kyu-Jeong Choi | Batch type atomic layer deposition apparatus |
US20110003450A1 (en) | 2009-07-03 | 2011-01-06 | Young-Ho Lee | Method for manufacturing semicondutor device with strained channel |
US20110000619A1 (en) | 2008-02-29 | 2011-01-06 | Allied Techfinders Co., Ltd | Rotational antenna and semiconductor device including the same |
US20110003087A1 (en) | 2007-12-17 | 2011-01-06 | Beneq Oy | Method and apparatus for generating plasma |
US20110008950A1 (en) | 2009-04-20 | 2011-01-13 | Applied Materials, Inc. | Remote Hydrogen Plasma With Ion Filter for Terminating Silicon Dangling Bonds |
US20110005684A1 (en) | 2008-03-14 | 2011-01-13 | Toshihiro Hayami | Plasma processing apparatus |
US20110006402A1 (en) | 2006-11-29 | 2011-01-13 | Micron Technology, Inc. | Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices |
US20110006406A1 (en) | 2009-07-08 | 2011-01-13 | Imec | Fabrication of porogen residues free and mechanically robust low-k materials |
US20110014795A1 (en) | 2009-07-15 | 2011-01-20 | Asm Japan K.K. | Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by Modified PEALD |
US20110014359A1 (en) | 2008-04-23 | 2011-01-20 | Imran Hashim | Yttrium and Titanium High-K Dielectric Film |
US20110021033A1 (en) | 2009-07-22 | 2011-01-27 | Tokyo Electron Limited | Batch cvd method and apparatus for semiconductor process |
US20110017139A1 (en) | 2000-12-06 | 2011-01-27 | Novellus Systems, Inc. | System for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (MII-ALD) |
US20110027999A1 (en) | 2006-08-16 | 2011-02-03 | Freescale Semiconductor, Inc. | Etch method in the manufacture of an integrated circuit |
US20110027725A1 (en) | 2008-04-04 | 2011-02-03 | Kiyoharu Tsutsumi | Polyol compound for photoresist |
US7884918B2 (en) | 2008-06-09 | 2011-02-08 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing device |
US20110031562A1 (en) | 2009-08-07 | 2011-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing layer of a field effect transistor |
US20110034039A1 (en) | 2009-08-06 | 2011-02-10 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable cvd processes |
US7888233B1 (en) | 2004-03-25 | 2011-02-15 | Novellus Systems, Inc. | Flowable film dielectric gap fill process |
WO2011019950A1 (en) | 2009-08-14 | 2011-02-17 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20110039419A1 (en) | 2009-07-17 | 2011-02-17 | Applied Materials, Inc. | Methods for forming dielectric layers |
US7894474B1 (en) | 1999-09-10 | 2011-02-22 | Koninklijke Philips Electronics N.V. | Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station |
US20110045676A1 (en) | 2009-08-18 | 2011-02-24 | Applied Materials, Inc. | Remote plasma source seasoning |
US20110046314A1 (en) | 2008-04-28 | 2011-02-24 | Basf Se | Low-k dielectrics obtainable by twin polymerization |
US20110042200A1 (en) | 2008-03-25 | 2011-02-24 | Anthony Wilby | Method of depositing amorphus aluminium oxynitride layer by reactive sputtering of an aluminium target in a nitrogen/oxygen atmosphere |
US20110041764A1 (en) | 2006-06-26 | 2011-02-24 | Aaron Webb | Batch processing platform for ald and cvd |
USD633452S1 (en) | 2009-08-27 | 2011-03-01 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
US20110052833A1 (en) | 2009-08-27 | 2011-03-03 | Applied Materials, Inc. | Gas distribution showerhead and method of cleaning |
US20110049100A1 (en) | 2008-01-16 | 2011-03-03 | Charm Engineering Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
US20110048769A1 (en) | 2009-09-01 | 2011-03-03 | Elpida Memory, Inc. | Insulating film, method of manufacturing the same, and semiconductor device |
US20110053383A1 (en) | 2009-08-26 | 2011-03-03 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
US20110048642A1 (en) | 2009-09-02 | 2011-03-03 | Tokyo Electron Limited | Plasma processing apparatus |
US7902009B2 (en) | 2008-12-11 | 2011-03-08 | Intel Corporation | Graded high germanium compound films for strained semiconductor devices |
US7902582B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
US20110056513A1 (en) | 2008-06-05 | 2011-03-10 | Axel Hombach | Method for treating surfaces, lamp for said method, and irradiation system having said lamp |
JP2011049592A (en) | 2004-06-21 | 2011-03-10 | Tokyo Electron Ltd | Plasma processing system and method, and computer-readable storage medium |
US20110057248A1 (en) | 2009-09-09 | 2011-03-10 | Yi Ma | Varied silicon richness silicon nitride formation |
US20110056626A1 (en) | 2009-09-10 | 2011-03-10 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
USD634329S1 (en) | 2006-09-26 | 2011-03-15 | Margareta Wastrom | Computer platform with forearm support |
US7906174B1 (en) | 2006-12-07 | 2011-03-15 | Novellus Systems, Inc. | PECVD methods for producing ultra low-k dielectric films using UV treatment |
US20110065289A1 (en) | 2009-09-14 | 2011-03-17 | Hitachi-Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US7910494B2 (en) | 2006-03-29 | 2011-03-22 | Tokyo Electron Limited | Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto |
US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US7910452B2 (en) | 2006-10-02 | 2011-03-22 | Hynix Semiconductor Inc. | Method for fabricating a cylinder-type capacitor utilizing a connected ring structure |
USD634719S1 (en) | 2009-08-27 | 2011-03-22 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
US20110067522A1 (en) | 2007-05-08 | 2011-03-24 | Lai Ching-Chuan | Bicycle handlebar grip |
US20110070740A1 (en) | 2009-09-18 | 2011-03-24 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US7915667B2 (en) | 2008-06-11 | 2011-03-29 | Qimonda Ag | Integrated circuits having a contact region and methods for manufacturing the same |
US20110076401A1 (en) | 2009-09-25 | 2011-03-31 | Hermes-Epitek Corporation | Method of Making Showerhead for Semiconductor Processing Apparatus |
USD635597S1 (en) * | 2008-11-17 | 2011-04-05 | Applied Materials, Inc. | Lift pin |
US7919142B2 (en) | 2005-03-22 | 2011-04-05 | Sungkyunkwan University Foundation For Corporate Collaboration | Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same |
US20110081519A1 (en) | 2008-03-07 | 2011-04-07 | Nederlandse Organisatie Voor Toegepast-Natuurweten | Process for adjusting the coefficient of friction and/or adhesion between surfaces of two solid objects |
US7923382B2 (en) | 2006-04-28 | 2011-04-12 | Asm International N.V. | Method for forming roughened surface |
US7925378B2 (en) | 2005-07-11 | 2011-04-12 | Brooks Automation, Inc. | Process apparatus with on-the-fly workpiece centering |
US20110086516A1 (en) | 2009-10-14 | 2011-04-14 | Asm Japan K.K. | METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD |
US20110083496A1 (en) | 2009-10-09 | 2011-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus with simultaneously movable stages |
US20110089166A1 (en) | 2007-01-15 | 2011-04-21 | Aaron Muir Hunter | Temperature measurement and control of wafer support in thermal processing chamber |
US20110091650A1 (en) | 2009-10-15 | 2011-04-21 | Kojima Press Industry Co., Ltd. | Method of forming organic polymer thin film and an apparatus for forming the organic polymer thin film |
US20110089419A1 (en) | 2009-10-21 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20110089469A1 (en) | 2009-10-02 | 2011-04-21 | Imec | Method for Manufacturing a Low Defect Interface Between a Dielectric and a III-V Compound |
US20110092077A1 (en) | 2006-03-31 | 2011-04-21 | Huiwen Xu | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
US20110097901A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
US7935940B1 (en) | 2008-01-08 | 2011-05-03 | Novellus Systems, Inc. | Measuring in-situ UV intensity in UV cure tool |
US20110100489A1 (en) | 2009-11-04 | 2011-05-05 | Tokyo Electron Limited | Substrate process apparatus, substrate process method, and computer readable storage medium |
US20110104395A1 (en) | 2009-11-02 | 2011-05-05 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and storage medium |
US7939447B2 (en) | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
US20110108741A1 (en) | 2009-11-12 | 2011-05-12 | Vela Technologies, Inc. | Integrating Optical System and Methods |
US20110107512A1 (en) | 2008-02-12 | 2011-05-12 | Patrick Gilbert | Heat exchange devices |
US20110108194A1 (en) | 2009-11-10 | 2011-05-12 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20110108424A1 (en) | 2008-05-06 | 2011-05-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Device for separating biomolecules from a fluid |
US20110117749A1 (en) | 2009-11-17 | 2011-05-19 | Lam Research Corporation | Method for reducing line width roughness with plasma pre-etch treatment on photoresist |
US20110115378A1 (en) | 2009-11-18 | 2011-05-19 | Applied Materials, Inc. | Plasma source design |
US20110114261A1 (en) | 2008-07-09 | 2011-05-19 | Tokyo Electron Limited | Plasma processing apparatus |
US20110117490A1 (en) | 2009-11-19 | 2011-05-19 | Rohm And Haas Electronic Materials Llc | Methods of forming electronic devices |
US20110117737A1 (en) | 2009-01-09 | 2011-05-19 | Birendra Agarwala | Method of Forming Metal Interconnect Structures in Ultra Low-K Dielectrics |
US20110117492A1 (en) | 2009-11-13 | 2011-05-19 | Tokyo Electron Limited | Photoresist coating and developing apparatus, substrate transfer method and interface apparatus |
US20110117732A1 (en) | 2009-11-17 | 2011-05-19 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US20110114601A1 (en) | 2009-11-18 | 2011-05-19 | Applied Materials, Inc. | Plasma source design |
US20110121736A1 (en) | 2008-06-11 | 2011-05-26 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20110121503A1 (en) | 2009-08-05 | 2011-05-26 | Applied Materials, Inc. | Cvd apparatus |
US20110124196A1 (en) | 2009-11-20 | 2011-05-26 | Hynix Semiconductor Inc. | Method for forming fine pattern in semiconductor device |
US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
KR20110058534A (en) | 2009-11-26 | 2011-06-01 | 주식회사 테스 | Gas distribution apparatus and process chamber having the same |
US20110127702A1 (en) | 2009-11-30 | 2011-06-02 | Gautam Vivek | Dynamic control of lance utilizing counterflow fluidic techniques |
US7955516B2 (en) | 2006-11-02 | 2011-06-07 | Applied Materials, Inc. | Etching of nano-imprint templates using an etch reactor |
US7955646B2 (en) | 2004-08-09 | 2011-06-07 | Applied Materials, Inc. | Elimination of flow and pressure gradients in low utilization processes |
US7955650B2 (en) | 2007-06-07 | 2011-06-07 | Asm Japan K.K. | Method for forming dielectric film using porogen gas |
US7957708B2 (en) | 2004-03-02 | 2011-06-07 | Rosemount Inc. | Process device with improved power generation |
US20110135842A1 (en) | 2005-11-18 | 2011-06-09 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20110132542A1 (en) | 2009-12-03 | 2011-06-09 | Tokyo Electron Limited | Plasma processing apparatus |
CN102094183A (en) | 2010-12-22 | 2011-06-15 | 中国工程物理研究院激光聚变研究中心 | Cold-wall batch reactor |
US20110139748A1 (en) | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US20110143461A1 (en) | 2009-12-15 | 2011-06-16 | Varian Semiconductor Equipment Associates, Inc. | In vacuum optical wafer heater for cryogenic processing |
US20110139272A1 (en) | 2007-08-30 | 2011-06-16 | Tokyo Electron Limited | Process-gas supply and processing system |
US20110140173A1 (en) | 2009-12-16 | 2011-06-16 | National Semiconductor Corporation | Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices |
US20110140172A1 (en) | 2009-12-10 | 2011-06-16 | Transphorm Inc. | Reverse side engineered iii-nitride devices |
US20110143032A1 (en) | 2002-04-17 | 2011-06-16 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants |
US7963736B2 (en) | 2008-04-03 | 2011-06-21 | Asm Japan K.K. | Wafer processing apparatus with wafer alignment device |
USD640715S1 (en) * | 2008-11-17 | 2011-06-28 | Applied Materials, Inc. | Lift pin assembly |
US7967913B2 (en) | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
US20110159680A1 (en) | 2009-12-31 | 2011-06-30 | Samsung Electronics Co., Ltd. | Method of forming a dielectric layer and method of manufacturing a semiconductor device using the same |
US20110159200A1 (en) | 2008-09-08 | 2011-06-30 | Shibaura Mechatronics Coporation | Substrate holding member, substrate processing apparatus, and substrate processing method |
US20110159673A1 (en) | 2008-02-08 | 2011-06-30 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
US20110155322A1 (en) | 2009-12-28 | 2011-06-30 | Tokyo Electron Limited | Plasma processing apparatus |
US20110155264A1 (en) | 2009-12-24 | 2011-06-30 | Horiba, Ltd. | Source gas concentration control system |
US20110159202A1 (en) | 2009-12-29 | 2011-06-30 | Asm Japan K.K. | Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD |
US7972980B2 (en) | 2009-01-21 | 2011-07-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
US20110171775A1 (en) | 2010-01-13 | 2011-07-14 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US20110171380A1 (en) | 2009-07-01 | 2011-07-14 | Shinya Higashi | Susceptor, coating apparatus and coating method using the susceptor |
US20110168330A1 (en) | 2010-01-14 | 2011-07-14 | Tokyo Electron Limited | Support structure, load lock apparatus, processing apparatus and transfer mechanism |
US7981751B2 (en) | 2007-10-26 | 2011-07-19 | International Business Machines Corporation | Structure and method for fabricating self-aligned metal contacts |
US20110177648A1 (en) | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Method of manufacturing thin film solar cells having a high conversion efficiency |
US20110175011A1 (en) | 2008-09-29 | 2011-07-21 | Vat Holding Ag | Vacuum valve |
US20110183079A1 (en) | 2009-08-31 | 2011-07-28 | Penn State Research Foundation | Plasma enhanced atomic layer deposition process |
US20110180233A1 (en) | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US20110183527A1 (en) | 2009-08-18 | 2011-07-28 | Youn-Joung Cho | Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor |
US20110183269A1 (en) | 2010-01-25 | 2011-07-28 | Hongbin Zhu | Methods Of Forming Patterns, And Methods For Trimming Photoresist Features |
US7989736B2 (en) | 2004-05-12 | 2011-08-02 | Viatron Technologies Inc. | System for heat treatment of semiconductor device |
US20110186984A1 (en) | 2010-01-29 | 2011-08-04 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20110185969A1 (en) | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
US7994721B2 (en) | 2005-10-27 | 2011-08-09 | Luxim Corporation | Plasma lamp and methods using a waveguide body and protruding bulb |
US7994070B1 (en) | 2010-09-30 | 2011-08-09 | Tokyo Electron Limited | Low-temperature dielectric film formation by chemical vapor deposition |
USD643055S1 (en) | 2008-09-11 | 2011-08-09 | Asm Japan K.K. | Heater block for use in a semiconductor processing tool |
US7993457B1 (en) | 2007-01-23 | 2011-08-09 | Novellus Systems, Inc. | Deposition sub-chamber with variable flow |
US7992318B2 (en) | 2007-01-22 | 2011-08-09 | Tokyo Electron Limited | Heating apparatus, heating method, and computer readable storage medium |
US20110195574A1 (en) | 2008-10-07 | 2011-08-11 | L'air Liquide Societe Anonyme Pour L'etude Et L'ex Ploitation Des Procedes Georges Claude | Niobium and vanadium organometallic precursors for thin film deposition |
US20110192820A1 (en) | 2010-02-09 | 2011-08-11 | Sungkyunkwan University Foundation For Corporate Collaboration | Atomic layer etching apparatus and etching method using the same |
US7998875B2 (en) | 2007-12-19 | 2011-08-16 | Lam Research Corporation | Vapor phase repair and pore sealing of low-K dielectric materials |
US20110198417A1 (en) | 2010-02-12 | 2011-08-18 | Applied Materials, Inc. | Process chamber gas flow improvements |
US20110198736A1 (en) | 2010-02-17 | 2011-08-18 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
US20110198034A1 (en) | 2010-02-11 | 2011-08-18 | Jennifer Sun | Gas distribution showerhead with coating material for semiconductor processing |
JP2011162830A (en) | 2010-02-09 | 2011-08-25 | Fuji Electric Co Ltd | Film-forming method with plasma cvd technique, substrate having film formed thereon, and film-forming apparatus |
US20110204025A1 (en) | 2006-08-15 | 2011-08-25 | Tokyo Electron Limited | Substrate processing method |
US20110207332A1 (en) | 2010-02-25 | 2011-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film coated process kits for semiconductor manufacturing tools |
US20110210468A1 (en) | 2010-01-27 | 2011-09-01 | Shannon Mark A | Method of forming a patterned layer of a material on a substrate |
US20110212625A1 (en) | 2010-02-26 | 2011-09-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20110217838A1 (en) | 2010-03-05 | 2011-09-08 | Asm Japan K.K. | Method for forming interconnect structure having airgap |
US20110223334A1 (en) | 2010-03-12 | 2011-09-15 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
JP2011181681A (en) | 2010-03-01 | 2011-09-15 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition method and atomic layer deposition device |
US20110220874A1 (en) | 2008-08-08 | 2011-09-15 | Tobias Hanrath | Inorganic Bulk Multijunction Materials and Processes for Preparing the Same |
US8020315B2 (en) | 2006-09-07 | 2011-09-20 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus, and program storage medium |
US20110226421A1 (en) | 2010-03-16 | 2011-09-22 | Tokyo Electron Limited | Plasma processing apparatus |
US20110236594A1 (en) | 2010-03-25 | 2011-09-29 | Jason Haverkamp | In-Situ Deposition of Film Stacks |
US20110232678A1 (en) | 2005-09-30 | 2011-09-29 | Lam Research Corporation | Extending storage time of removed plasma chamber components prior to cleaning thereof |
US20110236201A1 (en) | 2010-03-23 | 2011-09-29 | Sumedhkumar Vyankatesh Shende | Method and apparatus for radial exhaust gas turbine |
US20110237040A1 (en) | 2010-03-24 | 2011-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Main spacer trim-back method for replacement gate process |
US20110236600A1 (en) | 2010-03-25 | 2011-09-29 | Keith Fox | Smooth Silicon-Containing Films |
US20110244673A1 (en) | 2010-04-05 | 2011-10-06 | Jik-Ho Cho | Method for fabricating semiconductor device with buried gates |
US20110239940A1 (en) | 2008-10-08 | 2011-10-06 | Giacomo Benvenuti | Vapor phase deposition system |
US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
US8038835B2 (en) | 2002-03-27 | 2011-10-18 | Tokyo Electron Limited | Processing device, electrode, electrode plate, and processing method |
US8041450B2 (en) | 2007-10-04 | 2011-10-18 | Asm Japan K.K. | Position sensor system for substrate transfer robot |
US8041197B2 (en) | 2005-11-14 | 2011-10-18 | Tokyo Electron Limited | Heating apparatus, heat treatment apparatus, computer program and storage medium |
US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
US20110253044A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Showerhead assembly with metrology port purge |
US20110256724A1 (en) | 2010-04-15 | 2011-10-20 | Novellus Systems, Inc. | Gas and liquid injection methods and apparatus |
US20110254052A1 (en) | 2008-10-15 | 2011-10-20 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | Hybrid Group IV/III-V Semiconductor Structures |
US20110256675A1 (en) | 2005-01-07 | 2011-10-20 | International Business Machines Corporation | SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs |
US20110256727A1 (en) | 2010-04-14 | 2011-10-20 | Asm Genitech Korea Ltd. | Method of forming semiconductor patterns |
US8043972B1 (en) | 2006-06-30 | 2011-10-25 | Novellus Systems, Inc. | Adsorption based material removal process |
US20110262642A1 (en) | 2006-05-23 | 2011-10-27 | Air Products And Chemicals, Inc. | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors |
US20110259519A1 (en) | 2010-04-23 | 2011-10-27 | Lam Research Corporation | Coating method for gas delivery system |
US20110263115A1 (en) | 2010-04-26 | 2011-10-27 | Applied Materials, Inc. | Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors |
US20110264250A1 (en) | 2008-12-15 | 2011-10-27 | Tokyo Electron Limited | Substrate processing system, substrate processing method and storage medium storing program |
US8047711B2 (en) | 2008-08-06 | 2011-11-01 | Heinz Ploechinger | Thermocouple vacuum gauge |
US20110265725A1 (en) | 2008-09-26 | 2011-11-03 | Tokyo Electron Limited | Film deposition device and substrate processing device |
US20110266611A1 (en) | 2010-04-29 | 2011-11-03 | Beom-Yong Kim | Nonvolatile memory device and method for fabricating the same |
US20110265715A1 (en) | 2010-04-29 | 2011-11-03 | Amt Ag | Device for Coating Substrates by Means of High-Velocity Flame Spraying |
US20110265549A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Methods and apparatus for calibrating flow controllers in substrate processing systems |
US20110265951A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
US20110269314A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Process chambers having shared resources and methods of use thereof |
US8052794B2 (en) | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
US8051799B2 (en) | 2006-06-29 | 2011-11-08 | Renesas Electronics Corporation | Object-processing apparatus controlling production of particles in electric field or magnetic field |
US8055378B2 (en) | 2007-09-18 | 2011-11-08 | Tokyo Electron Limited | Device for controlling processing system, method for controlling processing system and computer-readable storage medium stored processing program |
US20110275018A1 (en) | 2007-04-02 | 2011-11-10 | Stmicroelectronics S.R.L. | Circuit architecture on an organic base and related manufacturing method |
US20110275166A1 (en) | 2010-05-07 | 2011-11-10 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8060252B2 (en) | 2007-11-30 | 2011-11-15 | Novellus Systems, Inc. | High throughput method of in transit wafer position correction in system using multiple robots |
US20110277690A1 (en) | 2010-05-14 | 2011-11-17 | Sierra Solar Power, Inc. | Multi-channel gas-delivery system |
US20110286819A1 (en) | 2010-05-20 | 2011-11-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US20110283933A1 (en) | 2007-01-24 | 2011-11-24 | Yuri Makarov | METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF SiC AND RELATED OR SIMILAR MATERIAL, BY CHEMICAL VAPOR DEPOSITION, USING PRECURSORS IN MODIFIED COLD-WALL REACTOR |
WO2011149640A1 (en) | 2010-05-28 | 2011-12-01 | Exxonmobil Upstream Research Company | Integrated adsorber head and valve design and swing adsorption methods related thereto |
US20110294288A1 (en) | 2007-11-26 | 2011-12-01 | Jeong-Ho Lee | Method of fabricating metal interconnection and method of fabricating image sensor using the same |
US20110291243A1 (en) | 2010-05-28 | 2011-12-01 | Applied Materials, Inc. | Planarizing etch hardmask to increase pattern density and aspect ratio |
US20110294075A1 (en) | 2010-05-25 | 2011-12-01 | United Microelectronics Corp. | Patterning method |
USD649986S1 (en) | 2010-08-17 | 2011-12-06 | Ebara Corporation | Sealing ring |
US8071452B2 (en) | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
US8071451B2 (en) | 2009-07-29 | 2011-12-06 | Axcelis Technologies, Inc. | Method of doping semiconductors |
US8072578B2 (en) | 2004-11-18 | 2011-12-06 | Nikon Corporation | Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method |
US20110297088A1 (en) | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
US20110298062A1 (en) | 2010-06-04 | 2011-12-08 | Applied Materials, Inc. | Metal gate structures and methods for forming thereof |
US8078310B2 (en) | 2006-10-02 | 2011-12-13 | Panasonic Corporation | Component crimping apparatus control method, component crimping apparatus, and measuring tool |
US8076237B2 (en) | 2008-05-09 | 2011-12-13 | Asm America, Inc. | Method and apparatus for 3D interconnect |
US8076230B2 (en) | 2005-07-01 | 2011-12-13 | Macronix International Co. Ltd. | Method of forming self-aligned contacts and local interconnects |
US8076251B2 (en) | 2009-09-30 | 2011-12-13 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus |
US8076250B1 (en) | 2010-10-06 | 2011-12-13 | Applied Materials, Inc. | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application |
US20110305856A1 (en) | 2006-03-17 | 2011-12-15 | L'air Liquide Societe Anonyme Pour L'etude Et I'exploitation Des Procedes Georges Claude | Hollow Body Made of Plastic Having a Barrier Layer on its Inner Surface and a Method for Manufacturing the Same |
US20110305102A1 (en) | 2010-06-09 | 2011-12-15 | Jason Andrew Berger | Semi-Continuous Feed Production of Liquid Personal Care Compositions |
USD650818S1 (en) * | 2008-12-19 | 2011-12-20 | Applied Materials, Inc. | Inner lift pin |
US20110312191A1 (en) | 2010-06-18 | 2011-12-22 | Fujitsu Semiconductor Limited | Semiconductor device manufacturing method |
US8084372B2 (en) | 2007-08-24 | 2011-12-27 | Tokyo Electron Limited | Substrate processing method and computer storage medium |
USD651291S1 (en) | 2010-01-24 | 2011-12-27 | Glv International (1995) Ltd. | Duct connector ring |
US8084104B2 (en) | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
US20110318888A1 (en) | 2010-06-29 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110318935A1 (en) | 2010-06-29 | 2011-12-29 | Tokyo Electron Limited | Method of setting thickness of dielectric and substrate processing apparatus having dielectric disposed in electrode |
US20120001172A1 (en) | 2009-03-13 | 2012-01-05 | Jian-Ku Shang | Rapid crystallization of heavily doped metal oxides and products produced thereby |
US20120003500A1 (en) | 2009-02-16 | 2012-01-05 | Mitsubishi Plastics, Inc. | Process for producing multilayered gas-barrier film |
US20120003831A1 (en) | 2010-07-05 | 2012-01-05 | Daehyuk Kang | Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines |
US20120003726A1 (en) | 2007-08-15 | 2012-01-05 | Enigma Diagnostics Limited | Apparatus and method for calibration of non-contact thermal sensors |
US20120003599A1 (en) | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Substrate support for use with multi-zonal heating sources |
US20120006489A1 (en) | 2009-03-26 | 2012-01-12 | Shogo Okita | Plasma processing apparatus and plasma processing method |
US20120009802A1 (en) | 2010-04-15 | 2012-01-12 | Adrien Lavoie | Plasma activated conformal dielectric film deposition |
US20120012556A1 (en) | 2008-02-27 | 2012-01-19 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
USD652896S1 (en) | 2009-06-17 | 2012-01-24 | Neoperl Gmbh | Faucet stream former |
US20120021252A1 (en) | 2010-07-22 | 2012-01-26 | Synos Technology, Inc. | Treating Surface of Substrate Using Inert Gas Plasma in Atomic Layer Deposition |
US20120028469A1 (en) | 2010-07-30 | 2012-02-02 | Asm Japan K.K. | METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM |
US20120028454A1 (en) | 2010-04-15 | 2012-02-02 | Shankar Swaminathan | Plasma activated conformal dielectric film deposition |
US20120024478A1 (en) | 2010-07-29 | 2012-02-02 | Hermes-Epitek Corporation | Showerhead |
US20120024231A1 (en) | 2010-07-28 | 2012-02-02 | Sumitomo Electric Industries. Ltd. | Semiconductor growing apparatus |
US20120024479A1 (en) | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
US20120027547A1 (en) | 2006-07-26 | 2012-02-02 | Jaeger Erich | Apparatus for storage of objects from the field of manufacture of electronic components |
US20120024227A1 (en) | 2007-12-11 | 2012-02-02 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
US20120024223A1 (en) | 2010-07-02 | 2012-02-02 | Matheson Tri-Gas, Inc. | Thin films and methods of making them using cyclohexasilane |
USD653734S1 (en) | 2010-01-08 | 2012-02-07 | Bulk Tank, Inc. | Screened gasket |
US8110099B2 (en) | 2007-05-09 | 2012-02-07 | Contech Stormwater Solutions Inc. | Stormwater filter assembly |
US20120031333A1 (en) | 2010-04-30 | 2012-02-09 | Applied Materials, Inc. | Vertical inline cvd system |
US20120033695A1 (en) | 2010-08-04 | 2012-02-09 | Sanyo Electric Co., Ltd. | Semiconductor laser apparatus and optical apparatus |
US20120034793A1 (en) | 2009-03-27 | 2012-02-09 | Tokyo Electron Limited | Method for forming metal nitride film |
US20120031500A1 (en) | 2009-03-03 | 2012-02-09 | Jun Hirose | Fluid control apparatus |
US20120032311A1 (en) | 2010-08-09 | 2012-02-09 | International Business Machines Corporation | Multi component dielectric layer |
US8114734B2 (en) | 2008-10-21 | 2012-02-14 | United Microelectronics Corp. | Metal capacitor and method of making the same |
US20120040528A1 (en) | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Methods for patterning microelectronic devices using two sacrificial layers |
US20120040097A1 (en) | 2010-08-13 | 2012-02-16 | Veeco Instruments Inc. | Enhanced wafer carrier |
US20120036732A1 (en) | 2009-11-12 | 2012-02-16 | Varadarajan Bhadri N | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using uv curing in ammonia |
US8119527B1 (en) | 2009-08-04 | 2012-02-21 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US20120043617A1 (en) | 2009-04-28 | 2012-02-23 | Canon Anelva Corporation | Semiconductor device and method of manufacturing the same |
US20120043556A1 (en) | 2010-08-20 | 2012-02-23 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
US20120046421A1 (en) | 2010-08-17 | 2012-02-23 | Uchicago Argonne, Llc | Ordered Nanoscale Domains by Infiltration of Block Copolymers |
USD655055S1 (en) | 2011-04-28 | 2012-02-28 | Carolyn Grace Toll | Pet outfit |
USD654884S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Top plate for reactor for manufacturing semiconductor |
USD654882S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
US20120052681A1 (en) | 2010-08-31 | 2012-03-01 | Micron Technology, Inc. | Methods of selectively forming a material |
KR101114219B1 (en) | 2004-08-09 | 2012-03-05 | 주성엔지니어링(주) | Apparatus for atomic layer deposition comprising light source, and the method of deposition using the same |
US8128333B2 (en) | 2006-11-27 | 2012-03-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and manufacturing method for semiconductor devices |
USD655260S1 (en) | 2010-10-21 | 2012-03-06 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
US8129290B2 (en) | 2005-05-26 | 2012-03-06 | Applied Materials, Inc. | Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure |
USD655261S1 (en) | 2010-10-21 | 2012-03-06 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
EP2426233A1 (en) | 2010-09-03 | 2012-03-07 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Growth of Al2O3 thin films for photovoltaic applications |
US20120055401A1 (en) | 2007-12-27 | 2012-03-08 | Tokyo Electron Limited | Substrate processing method and system |
US20120058630A1 (en) | 2010-09-08 | 2012-03-08 | Veeco Instruments Inc. | Linear Cluster Deposition System |
US20120058270A1 (en) | 2009-05-15 | 2012-03-08 | Wayne State University | Thermally stable volatile film precursors |
USD655599S1 (en) | 2010-12-29 | 2012-03-13 | Bill Durham | Wall or door mountable holder |
CN102373440A (en) | 2010-08-12 | 2012-03-14 | Snt能源技术有限公司 | Chemical vapor deposition device |
US20120064726A1 (en) | 2010-09-15 | 2012-03-15 | Tokyo Electron Limited | Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method |
US20120064764A1 (en) | 2009-06-05 | 2012-03-15 | Andrew Llc | Clamp and Grip Coaxial Connector |
US20120064690A1 (en) | 2010-09-10 | 2012-03-15 | Elpida Memory, Inc. | Method for manufacturing semiconductor device |
CN102383106A (en) | 2010-09-03 | 2012-03-21 | 甘志银 | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas |
US20120070136A1 (en) | 2010-08-09 | 2012-03-22 | Applied Materials, Inc. | Transparent Reflector Plate For Rapid Thermal Processing Chamber |
US20120068242A1 (en) | 2010-09-16 | 2012-03-22 | Seung-Mok Shin | Semiconductor devices and methods of fabricating the same |
US20120070997A1 (en) | 2006-01-11 | 2012-03-22 | Lam Research Corporation | Gas switching section including valves having different flow coefficient's for gas distribution system |
US20120074533A1 (en) | 2010-09-24 | 2012-03-29 | Tokyo Electron (TEL)Limited | Structures And Techniques For Atomic Layer Deposition |
US20120073400A1 (en) | 2010-09-29 | 2012-03-29 | John Wang | Handlebar grip assembly |
US20120077349A1 (en) | 2010-09-23 | 2012-03-29 | Ming Li | Plasma-activated deposition of conformal films |
TW201213596A (en) | 2010-09-24 | 2012-04-01 | Ferrotec Usa Corp | Hybrid gas injector |
US20120080756A1 (en) | 2009-07-01 | 2012-04-05 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US20120083134A1 (en) | 2010-09-30 | 2012-04-05 | Hui-Jung Wu | Method of mitigating substrate damage during deposition processes |
US20120088369A1 (en) | 2010-10-06 | 2012-04-12 | Applied Materials, Inc. | Atomic Layer Deposition Of Photoresist Materials And Hard Mask Precursors |
US20120088031A1 (en) | 2010-10-08 | 2012-04-12 | Adixen Vacuum Products | Gas discharge pipe and associated method |
US20120094468A1 (en) | 2010-10-15 | 2012-04-19 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US20120091522A1 (en) | 2010-10-19 | 2012-04-19 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
US20120094010A1 (en) | 2010-10-18 | 2012-04-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, temperature controlling method of substrate processing apparatus, and heating method of substrate processing apparatus |
US20120098107A1 (en) | 2009-08-14 | 2012-04-26 | Petri Raisanen | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20120100464A1 (en) | 2010-10-21 | 2012-04-26 | Asahi Glass Company, Limited | Glass substrate-holding tool |
US20120103939A1 (en) | 2010-10-27 | 2012-05-03 | Applied Materials, Inc. | Methods and apparatus for controlling photoresist line width roughness |
US20120103522A1 (en) | 2010-10-27 | 2012-05-03 | Lam Research Ag | Closed chamber for wafer wet processing |
US20120108039A1 (en) | 2005-01-31 | 2012-05-03 | Ali Zojaji | Etchant treatment processes for substrate surfaces and chamber surfaces |
US20120104514A1 (en) | 2010-11-03 | 2012-05-03 | Samsung Electronics Co., Ltd. | Semiconductor Devices and Methods of Manufacturing the Same |
US20120107607A1 (en) | 2009-07-17 | 2012-05-03 | Mitsui Chemicals, Inc. | Multilayered material and method of producing the same |
US20120108048A1 (en) | 2010-11-01 | 2012-05-03 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor devices and methods of fabricating the same |
WO2012056592A1 (en) | 2010-10-28 | 2012-05-03 | 株式会社朝日工業社 | Clean room |
US8172947B2 (en) | 2006-09-25 | 2012-05-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and attaching/detaching method of reaction vessel |
US8174400B2 (en) | 2006-09-21 | 2012-05-08 | Applied Materials, Inc. | Frequency monitoring to detect plasma process abnormality |
US20120115250A1 (en) | 2009-05-20 | 2012-05-10 | Kabushiki Kaisha Toshiba | Concave-convex pattern forming method and magnetic tunnel junction element forming method |
US20120114877A1 (en) | 2010-11-05 | 2012-05-10 | Synos Technology, Inc. | Radical Reactor with Multiple Plasma Chambers |
US20120111271A1 (en) | 2007-10-11 | 2012-05-10 | Begarney Michael J | Chemical vapor deposition reactor |
US8178436B2 (en) | 2006-12-21 | 2012-05-15 | Intel Corporation | Adhesion and electromigration performance at an interface between a dielectric and metal |
US20120122319A1 (en) | 2007-09-19 | 2012-05-17 | Hironobu Shimizu | Coating method for coating reaction tube prior to film forming process |
US20120122275A1 (en) | 2006-02-17 | 2012-05-17 | Bon Won Koo | Methods of fabricating organic thin film transistors |
US20120119337A1 (en) | 2010-11-11 | 2012-05-17 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device and semiconductor device |
US20120122302A1 (en) | 2010-11-03 | 2012-05-17 | Applied Materials, Inc. | Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films |
US20120121823A1 (en) | 2010-11-12 | 2012-05-17 | Applied Materials, Inc. | Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
US20120125258A1 (en) | 2010-11-24 | 2012-05-24 | Synos Technology, Inc. | Extended Reactor Assembly with Multiple Sections for Performing Atomic Layer Deposition on Large Substrate |
US20120126300A1 (en) | 2010-11-23 | 2012-05-24 | Kiyeon Park | Capacitors, semiconductor devices including the same and methods of manufacturing the semiconductor devices |
US20120128897A1 (en) | 2010-06-02 | 2012-05-24 | Air Products And Chemicals, Inc. | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same |
US8187951B1 (en) | 2006-11-01 | 2012-05-29 | Novellus Systems, Inc. | CVD flowable gap fill |
US20120135145A1 (en) | 2009-07-08 | 2012-05-31 | Sung Tae Je | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
US20120139009A1 (en) | 2010-12-02 | 2012-06-07 | International Business Machine Corporation | SOI SiGe-Base Lateral Bipolar Junction Transistor |
US8198168B2 (en) | 2009-04-01 | 2012-06-12 | Elpida Memory, Inc. | Method of manufacturing capacitive insulating film for capacitor |
US8196234B2 (en) | 2007-01-16 | 2012-06-12 | Hansgrohe Ag | Shower installation |
US20120149213A1 (en) | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
US20120149207A1 (en) | 2005-10-31 | 2012-06-14 | Graff Wesley P | Method for etching organic hardmasks |
US20120146113A1 (en) | 2009-09-04 | 2012-06-14 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
WO2012077590A1 (en) | 2010-12-09 | 2012-06-14 | 株式会社アルバック | Apparatus for forming organic thin film |
US20120145078A1 (en) | 2010-12-10 | 2012-06-14 | Industrial Technology Research Institute | Showerhead integrating intake and exhaust |
US20120156890A1 (en) | 2010-12-20 | 2012-06-21 | Applied Materials, Inc. | In-situ low-k capping to improve integration damage resistance |
US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
US20120160172A1 (en) | 2010-12-28 | 2012-06-28 | Tokyo Electron Limited | Raw material supplying device and film forming apparatus |
US20120164842A1 (en) | 2010-12-27 | 2012-06-28 | Tokyo Electron Limited | Trench embedding method and film-forming apparatus |
US20120164327A1 (en) | 2010-12-27 | 2012-06-28 | Tokyo Electron Limited | Film-forming method and film-forming apparatus for forming silicon oxide film on tungsten film or tungsten oxide film |
US20120164846A1 (en) | 2010-12-28 | 2012-06-28 | Asm Japan K.K. | Method of Forming Metal Oxide Hardmask |
US20120164837A1 (en) | 2010-12-23 | 2012-06-28 | Tan Elliot N | Feature size reduction |
US20120161126A1 (en) | 2010-12-28 | 2012-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20120161405A1 (en) | 2010-12-20 | 2012-06-28 | Mohn Jonathan D | System and apparatus for flowable deposition in semiconductor fabrication |
US20120160809A1 (en) | 2009-08-21 | 2012-06-28 | Tokyo Electron Limited | Plasma processing apparatus and substrate processing method |
CN102539019A (en) | 2012-01-05 | 2012-07-04 | 北京东方计量测试研究所 | Temperature measurement and calibration platform in space vacuum environment |
US20120171874A1 (en) | 2007-02-27 | 2012-07-05 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon- Containing Films |
US20120170170A1 (en) | 2010-12-29 | 2012-07-05 | Stmicroelectronics (Crolles 2) Sas | Method for manufacturing a polycrystalline dielectric layer |
US20120171391A1 (en) | 2010-12-30 | 2012-07-05 | Applied Materials, Inc. | Thin film deposition using microwave plasma |
US20120175751A1 (en) | 2009-07-14 | 2012-07-12 | Julien Gatineau | Deposition of group iv metal-containing films at high temperature |
US20120177845A1 (en) | 2009-08-07 | 2012-07-12 | Sigma-Aldrich Co. Llc | High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films |
US20120175518A1 (en) | 2011-01-10 | 2012-07-12 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for monitoring ion mass, energy, and angle in processing systems |
US20120180719A1 (en) | 2011-01-14 | 2012-07-19 | Tokyo Electron Limited | Film forming apparatus |
US20120183689A1 (en) | 2009-09-29 | 2012-07-19 | Tokyo Electron Limited | Ni film forming method |
US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US20120187305A1 (en) | 2011-01-21 | 2012-07-26 | Uchicago Argonne Llc | Microchannel plate detector and methods for their fabrication |
US20120186521A1 (en) | 2009-09-17 | 2012-07-26 | Tokyo Electron Limited | Plasma processing apparatus and gas supply device for plasma processing apparatus |
US20120186573A1 (en) | 2011-01-21 | 2012-07-26 | Jdira Lucian C | Thermal processing furnace and liner for the same |
US20120190185A1 (en) | 2011-01-26 | 2012-07-26 | Applied Materials, Inc. | Plasma treatment of silicon nitride and silicon oxynitride |
US20120187375A1 (en) | 2011-01-25 | 2012-07-26 | International Business Machines Corporation | Deposition On A Nanowire Using Atomic Layer Deposition |
US20120187083A1 (en) | 2011-01-20 | 2012-07-26 | Akio Hashizume | Substrate treatment method and substrate treatment apparatus |
US20120190208A1 (en) | 2009-08-20 | 2012-07-26 | Tokyo Electron Limited | Plasma treatment device and plasma treatment method |
US20120190178A1 (en) | 2011-01-24 | 2012-07-26 | Applied Materials, Inc. | Polysilicon films by hdp-cvd |
US8231799B2 (en) | 2006-04-28 | 2012-07-31 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
US20120196048A1 (en) | 2011-01-28 | 2012-08-02 | Asm Japan K.K. | Method of depositing film by atomic layer deposition with pulse-time-modulated plasma |
US20120196242A1 (en) | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
JP2012146939A (en) | 2010-12-21 | 2012-08-02 | Hitachi Kokusai Electric Inc | Substrate processing apparatus, method of manufacturing substrate, and method of manufacturing semiconductor device |
USD665055S1 (en) | 2012-01-24 | 2012-08-07 | Asm Ip Holding B.V. | Shower plate |
US8241992B2 (en) | 2010-05-10 | 2012-08-14 | International Business Machines Corporation | Method for air gap interconnect integration using photo-patternable low k material |
US8242031B2 (en) | 2007-10-22 | 2012-08-14 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US8242028B1 (en) | 2007-04-03 | 2012-08-14 | Novellus Systems, Inc. | UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement |
TW201234453A (en) | 2010-11-18 | 2012-08-16 | Tokyo Electron Ltd | Insulating member and substrate processing device containing insulating member |
US20120206033A1 (en) | 2011-02-15 | 2012-08-16 | Tokyo Electron Limited | Upper electrode and plasma processing apparatus |
US20120207456A1 (en) | 2009-08-21 | 2012-08-16 | Ap Systems Inc. | Heater block for a rapid thermal processing apparatus |
US8246900B2 (en) | 2006-09-05 | 2012-08-21 | Tokyo Electron Limited | Annealing apparatus |
US20120212121A1 (en) | 2011-02-21 | 2012-08-23 | Lin Wen-Fei | Ceramic-glass composite electrode and fluorescent lamp having the same |
US20120213947A1 (en) | 2011-02-18 | 2012-08-23 | Synos Technology, Inc. | Depositing thin layer of material on permeable substrate |
US20120214318A1 (en) | 2011-02-18 | 2012-08-23 | Asm Japan K.K. | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen |
US8253204B2 (en) | 2008-04-18 | 2012-08-28 | Hynix Semiconductor Inc. | Semiconductor device with strained channel and method of fabricating the same |
US8252659B2 (en) | 2008-12-02 | 2012-08-28 | Imec | Method for producing interconnect structures for integrated circuits |
US20120216743A1 (en) | 2011-02-28 | 2012-08-30 | Hitachi Kokusai Electric Inc. | Attachment for substrates having different diameters, substrate processing apparatus, and method of manufacturing substrate or semiconductor device |
JP2012164736A (en) | 2011-02-04 | 2012-08-30 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and semiconductor device manufacturing method |
US20120219735A1 (en) | 2011-02-27 | 2012-08-30 | The Board Of Trustees Of The University Of Alabama | Methods for preparing and using metal and/or metal oxide porous materials |
US20120219824A1 (en) | 2011-02-28 | 2012-08-30 | Uchicago Argonne Llc | Atomic layer deposition of super-conducting niobium silicide |
US20120220139A1 (en) | 2009-10-14 | 2012-08-30 | Asm Japan K.K. | Method of depositing dielectric film by modified peald method |
US20120225561A1 (en) | 2011-03-03 | 2012-09-06 | Tokyo Electron Limited | Semiconductor device manufacturing method and computer-readable storage medium |
US20120222813A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Vacuum chambers with shared pump |
US20120225192A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus And Process For Atomic Layer Deposition |
US20120222815A1 (en) | 2011-03-04 | 2012-09-06 | Mohamed Sabri | Hybrid ceramic showerhead |
US20120231771A1 (en) | 2008-10-27 | 2012-09-13 | Ebay, Inc. | Method and apparatus for authorizing a payment via a remote device |
US20120231611A1 (en) | 2009-09-02 | 2012-09-13 | L'air Liquide Societe Anonyme Pour L'exploitation Des Procedes Georges Claude | Dihalide germanium(ii) precursors for germanium-containing film depositions |
US20120232340A1 (en) | 2011-03-07 | 2012-09-13 | Peer Medical Ltd. | Multi camera endoscope having a side service channel |
US20120238074A1 (en) | 2011-03-14 | 2012-09-20 | Applied Materials, Inc. | Methods and apparatus for conformal doping |
US8272516B2 (en) | 2007-11-19 | 2012-09-25 | Caterpillar Inc. | Fluid filter system |
US20120241089A1 (en) | 2011-03-25 | 2012-09-27 | Applied Materials, Inc. | Method and apparatus for thermocouple installation or replacement in a substrate support |
US20120244703A1 (en) | 2009-12-11 | 2012-09-27 | Sumco Corporation | Tray for cvd and method for forming film using same |
US20120241411A1 (en) | 2011-03-24 | 2012-09-27 | Uchicago Argonne Llc | Sequential infiltration synthesis for advanced lithography |
US20120240858A1 (en) | 2011-03-22 | 2012-09-27 | Kitz Sct Corporation | Substrate processing apparatus and solid raw material replenishing method |
US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
US8278224B1 (en) | 2009-09-24 | 2012-10-02 | Novellus Systems, Inc. | Flowable oxide deposition using rapid delivery of process gases |
US20120247386A1 (en) | 2011-03-28 | 2012-10-04 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
US20120252229A1 (en) | 2000-12-21 | 2012-10-04 | Mattson Technology, Inc. | System and Process For Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy |
US8282847B2 (en) | 2007-12-21 | 2012-10-09 | Lam Research Corporation | Photoresist double patterning |
KR20120111060A (en) | 2011-03-31 | 2012-10-10 | 최대규 | Plasma reactor having hot baffle and wafer handle method thereof |
JP2012195513A (en) | 2011-03-17 | 2012-10-11 | Tokyo Electron Ltd | Plasma processing apparatus |
US20120263876A1 (en) | 2011-02-14 | 2012-10-18 | Asm Ip Holding B.V. | Deposition of silicon dioxide on hydrophobic surfaces |
US20120264051A1 (en) | 2011-04-13 | 2012-10-18 | Novellus Systems, Inc. | Pedestal covers |
US20120263875A1 (en) | 2011-04-18 | 2012-10-18 | Siltronic Ag | Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer |
US20120264305A1 (en) | 2011-04-13 | 2012-10-18 | Asm Japan K.K. | Footing Reduction Using Etch-Selective Layer |
US20120263887A1 (en) | 2011-04-13 | 2012-10-18 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for ion-assisted atomic layer deposition |
US8293642B2 (en) | 2010-04-27 | 2012-10-23 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor devices |
US20120269962A1 (en) | 2009-10-20 | 2012-10-25 | Asm International N.V. | Process for passivating dielectric films |
US20120270339A1 (en) | 2011-04-25 | 2012-10-25 | Applied Materials, Inc. | Uv assisted silylation for recovery and pore sealing of damaged low k films |
US20120270393A1 (en) | 2008-12-19 | 2012-10-25 | Asm International N.V. | Metal silicide, metal germanide, methods for making the same |
US20120270384A1 (en) | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
US20120269967A1 (en) | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use |
US20120267048A1 (en) | 2011-04-25 | 2012-10-25 | Tokyo Electron Limited | Plasma processing apparatus |
US20120270407A1 (en) | 2011-04-19 | 2012-10-25 | Siltronic Ag | Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer |
US20120273052A1 (en) | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Method and apparatus for gas delivery |
US20120276306A1 (en) | 2011-04-26 | 2012-11-01 | Asm Japan K.K. | Atomic Layer Deposition For Controlling Vertical Film Growth |
US20120273162A1 (en) | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Methods of cooling process chamber components |
US8307472B1 (en) | 2009-02-04 | 2012-11-13 | Thomas Jason Saxon | Light emitting diode system |
US20120289057A1 (en) | 2011-05-11 | 2012-11-15 | Intermolecular, Inc. | Apparatus and method for multiple symmetrical divisional gas distribution |
US20120289053A1 (en) | 2011-05-10 | 2012-11-15 | Lam Research Corporation | Semiconductor Processing System Having Multiple Decoupled Plasma Sources |
US20120288625A1 (en) | 2011-05-10 | 2012-11-15 | Tokyo Electron Limited | Gas supply apparatus, thermal treatment apparatus, gas supply method, and thermal treatment method |
US20120289056A1 (en) | 2011-04-20 | 2012-11-15 | Applied Materials, Inc. | Selective silicon nitride etch |
US20120295449A1 (en) | 2011-02-18 | 2012-11-22 | Asm Japan K.K. | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen |
US20120295427A1 (en) | 2011-05-19 | 2012-11-22 | Asm America, Inc. | High throughput cyclical epitaxial deposition and etch process |
US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US20120303313A1 (en) | 2011-05-26 | 2012-11-29 | Tokyo Electron Limited | Temperature measurement apparatus, method of measuring temperature profile, recording medium and heat treatment apparatus |
TW201247690A (en) | 2011-05-24 | 2012-12-01 | Air Prod & Chem | Organoaminosilane precursors and methods for making and using same |
US8324699B2 (en) | 2008-02-08 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8323413B2 (en) | 2006-03-14 | 2012-12-04 | Lg Innotek Co., Ltd | Susceptor and semiconductor manufacturing apparatus including the same |
US20120304935A1 (en) | 2011-05-31 | 2012-12-06 | Oosterlaken Theodorus G M | Bubbler assembly and method for vapor flow control |
US20120305026A1 (en) | 2011-05-31 | 2012-12-06 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus and Substrate Processing Method |
US20120305987A1 (en) | 2011-06-03 | 2012-12-06 | Infineon Technologies Austria Ag | Lateral trench mesfet |
US20120305196A1 (en) | 2011-06-06 | 2012-12-06 | Asm Japan K.K. | High-Throughput Semiconductor-Processing Apparatus Equipped with Multiple Dual-Chamber Modules |
US20120309181A1 (en) | 2011-06-01 | 2012-12-06 | Asm International N.V. | Process for depositing electrode with high effective work function |
US20120307588A1 (en) | 2010-02-23 | 2012-12-06 | Asahi Organic Chemicals Industry Co., Ltd. | In-line-type fluid mixer |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US20120315113A1 (en) | 2010-02-05 | 2012-12-13 | Tokyo Electron Limited | Substrate holder, substrate transfer apparatus, and substrate processing apparatus |
US20120318457A1 (en) | 2011-06-17 | 2012-12-20 | Son Nguyen | Materials and coatings for a showerhead in a processing system |
US20120318773A1 (en) | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control |
US20120318334A1 (en) | 2011-06-14 | 2012-12-20 | International Business Machines Corporation | Spalling methods to form multi-junction photovoltaic structure |
US20120321786A1 (en) | 2011-06-17 | 2012-12-20 | Intermolecular, Inc. | System for multi-region processing |
US20120320491A1 (en) | 2011-06-14 | 2012-12-20 | Samsung Mobile Display Co., Ltd. | Electrostatic chuck |
US20120322252A1 (en) | 2009-04-01 | 2012-12-20 | Byoungkeun Son | Semiconductor memory device comprising three-dimensional memory cell array |
US20120319279A1 (en) | 2011-06-16 | 2012-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device and method of producing the same |
US8338809B2 (en) | 2008-10-21 | 2012-12-25 | Applied Materials, Inc. | Ultraviolet reflector with coolant gas holes and method |
US20120325148A1 (en) | 2011-06-22 | 2012-12-27 | Asm Japan K.K. | Method for Positioning Wafers in Multiple Wafer Transport |
US20120328780A1 (en) | 2011-06-27 | 2012-12-27 | Asm Japan K.K. | Dual Section Module Having Shared and Unshared Mass Flow Controllers |
US20120329208A1 (en) | 2009-10-26 | 2012-12-27 | Asm International N.V. | Synthesis and use of precursors for ald of group va element containing thin films |
US20130005122A1 (en) | 2010-03-18 | 2013-01-03 | Soitec | Method for finishing a substrate of the semiconductor-on-insulator type |
US20130005147A1 (en) | 2011-06-28 | 2013-01-03 | International Business Machines Corporation | Method of reducing critical dimension process bias differences between narrow and wide damascene wires |
US20130002121A1 (en) | 2011-06-28 | 2013-01-03 | Federal-Mogul Ignition Company | Electrode material for a spark plug |
US20130011983A1 (en) | 2011-07-07 | 2013-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-Situ Doping of Arsenic for Source and Drain Epitaxy |
US20130012003A1 (en) | 2011-07-06 | 2013-01-10 | Suvi Haukka | Methods for depositing thin films comprising gallium nitride by atomic layer deposition |
US20130012034A1 (en) | 2004-08-02 | 2013-01-10 | Ahn Kie Y | Zirconium-doped tantalum oxide films |
US20130011630A1 (en) | 2011-07-07 | 2013-01-10 | Brewer Science Inc. | Metal-oxide films from small molecules for lithographic applications |
US20130011984A1 (en) | 2011-07-07 | 2013-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy |
US20130008607A1 (en) | 2011-07-06 | 2013-01-10 | Tokyo Electron Limited | Antenna, dielectric window, plasma processing apparatus and plasma processing method |
US20130017503A1 (en) | 2011-07-13 | 2013-01-17 | De Ridder Chris G M | Wafer processing apparatus with heated, rotating substrate support |
US20130014896A1 (en) | 2011-07-15 | 2013-01-17 | Asm Japan K.K. | Wafer-Supporting Device and Method for Producing Same |
US20130014697A1 (en) | 2011-07-12 | 2013-01-17 | Asm Japan K.K. | Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers |
KR20130007806A (en) | 2011-07-11 | 2013-01-21 | 주식회사 케이씨텍 | Heater module of atomic layer deposition apparatus |
US20130019960A1 (en) | 2011-07-22 | 2013-01-24 | Applied Materials, Inc. | Reactant Delivery System For ALD/CVD Processes |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US20130019944A1 (en) | 2011-07-21 | 2013-01-24 | International Business Machines Corporation | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys |
US20130023120A1 (en) | 2010-04-02 | 2013-01-24 | Tokyo Electron Limited | Method of forming mask pattern and method of manufacturing semiconductor device |
US20130020246A1 (en) | 2011-07-19 | 2013-01-24 | Hayward Industries, Inc. | Filter Vessel Assembly and Related Methods of Use |
US20130023124A1 (en) | 2011-07-20 | 2013-01-24 | Nemani Srinivas D | Method of patterning a low-k dielectric film |
US20130026451A1 (en) | 2011-07-25 | 2013-01-31 | International Business Machines Corporation | Hybrid CMOS Technology With Nanowire Devices and Double Gated Planar Devices |
US20130025538A1 (en) | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
US20130025786A1 (en) | 2011-07-28 | 2013-01-31 | Vladislav Davidkovich | Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes |
TWM446412U (en) | 2012-08-06 | 2013-02-01 | Boogang Semiconductor Co Ltd | Exhaust ring easy for clean |
JP2013026479A (en) | 2011-07-21 | 2013-02-04 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer growth method and atomic layer growth apparatus |
US20130032085A1 (en) | 2011-08-04 | 2013-02-07 | Applied Materials, Inc. | Plasma assisted hvpe chamber design |
US20130037532A1 (en) | 2011-08-08 | 2013-02-14 | Applied Materials, Inc. | Substrate support with heater |
US20130040481A1 (en) | 2011-08-12 | 2013-02-14 | Genesis Technology Usa, Inc. | U-Channel Coaxial F-Connector |
US20130040447A1 (en) | 2010-04-15 | 2013-02-14 | Shankar Swaminathan | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US20130037858A1 (en) | 2011-08-10 | 2013-02-14 | Semiconductor Manufacturing International (Beijing) Corporation | Semiconductor device and manufacturing method thereof |
US20130037886A1 (en) | 2011-08-10 | 2013-02-14 | Teng-Chun Tsai | Semiconductor device and method of making the same |
US8378464B2 (en) | 2007-07-06 | 2013-02-19 | Tokyo Electron Limited | Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium |
USD676943S1 (en) | 2012-01-11 | 2013-02-26 | Bill Kluss | Pipe end cap |
US8382939B2 (en) | 2009-07-13 | 2013-02-26 | Applied Materials, Inc. | Plasma processing chamber with enhanced gas delivery |
US20130052836A1 (en) | 2010-04-09 | 2013-02-28 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus |
US20130048606A1 (en) | 2011-08-31 | 2013-02-28 | Zhigang Mao | Methods for in-situ chamber dry clean in photomask plasma etching processing chamber |
US20130052585A1 (en) | 2011-08-26 | 2013-02-28 | Jsr Corporation | Photodecomposable bases and photoresist compositions |
US20130059078A1 (en) | 2010-02-23 | 2013-03-07 | Julien Gatineau | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
US20130059415A1 (en) | 2011-09-05 | 2013-03-07 | Tokyo Electron Limited | Film deposition apparatus, film deposition method and storage medium |
US8393091B2 (en) | 2007-02-21 | 2013-03-12 | Fujitsu Semiconductor Limited | Substrate processing method, and method of manufacturing semiconductor device |
US8394466B2 (en) | 2010-09-03 | 2013-03-12 | Asm Japan K.K. | Method of forming conformal film having si-N bonds on high-aspect ratio pattern |
US20130064973A1 (en) | 2011-09-09 | 2013-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chamber Conditioning Method |
US20130062839A1 (en) | 2011-09-09 | 2013-03-14 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US20130065189A1 (en) | 2011-09-13 | 2013-03-14 | Tokyo Electron Limited | Thermal treatment apparatus, temperature control system, thermal treatment method, temperature control method, and non-transitory computer readable medium embodied with program for executing the thermal treatment method or the temperature control method |
US20130062753A1 (en) | 2011-09-09 | 2013-03-14 | International Business Machines Corporation | C-rich carbon boron nitride dielectric films for use in electronic devices |
US20130068970A1 (en) | 2011-09-21 | 2013-03-21 | Asm Japan K.K. | UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations |
US20130068391A1 (en) | 2011-09-15 | 2013-03-21 | Applied Materials, Inc. | Slit valve apparatus, systems, and methods |
US20130070456A1 (en) | 2011-09-02 | 2013-03-21 | Chul Ho Jang | Lighting device |
US20130068727A1 (en) | 2010-06-01 | 2013-03-21 | Shogo Okita | Plasma processing apparatus and plasma processing method |
US20130069052A1 (en) | 2011-09-16 | 2013-03-21 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
US8404044B2 (en) | 2007-09-27 | 2013-03-26 | Nuflare Technology, Inc. | Epitaxial growth film formation method |
US8404499B2 (en) | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
US20130078376A1 (en) | 2010-04-01 | 2013-03-28 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal nitride containing film deposition using combination of amino-metal and halogenated metal precursors |
US20130078392A1 (en) | 2011-09-27 | 2013-03-28 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
WO2013043330A1 (en) | 2011-09-23 | 2013-03-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US20130075788A1 (en) | 2011-09-28 | 2013-03-28 | Fujitsu Limited | Semiconductor device and fabrication method |
US20130075746A1 (en) | 2011-09-23 | 2013-03-28 | Alpha and Omega Semiconductor Inc. | Lateral PNP Bipolar Transistor with Narrow Trench Emitter |
CN103014846A (en) | 2013-01-14 | 2013-04-03 | 东莞市中镓半导体科技有限公司 | Concentric-ring sprayer structure for material vapor phase epitaxy |
US20130084711A1 (en) | 2011-10-04 | 2013-04-04 | Applied Materials, Inc. | Remote plasma burn-in |
US20130081702A1 (en) | 2011-09-29 | 2013-04-04 | Applied Materials, Inc. | Methods for in-situ calibration of a flow controller |
US20130085618A1 (en) | 2011-10-04 | 2013-04-04 | Mks Instruments, Inc. | Method of and Apparatus for Multiple Channel Flow Ratio Controller System |
US20130084714A1 (en) | 2011-09-30 | 2013-04-04 | Asm Japan K.K. | Method for Forming Single-Phase Multi-Element Film by PEALD |
US20130084156A1 (en) | 2010-06-10 | 2013-04-04 | Nabtesco Corporation | Robot arm |
US20130084408A1 (en) | 2010-08-06 | 2013-04-04 | Mitsubishi Heavy Industries, Ltd. | Vacuum processing apparatus and plasma processing method |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US8415587B2 (en) | 2010-12-03 | 2013-04-09 | Uvtech Systems, Inc. | Fiber-optic beam delivery system for wafer edge processing |
US20130089716A1 (en) | 2011-10-10 | 2013-04-11 | Brewer Science Inc. | Spin-on carbon compositions for lithographic processing |
US20130089988A1 (en) | 2011-10-07 | 2013-04-11 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US20130089667A1 (en) | 2011-10-06 | 2013-04-11 | Industrial Technology Research Institute | Evaporation apparatus and method of forming organic film |
US20130092085A1 (en) | 2011-10-17 | 2013-04-18 | Synos Technology, Inc. | Linear atomic layer deposition apparatus |
US20130095973A1 (en) | 2011-10-12 | 2013-04-18 | Ferrotec (Usa) Corporation | Non-contact magnetic drive assembly with mechanical stop elements |
US20130093048A1 (en) | 2011-10-17 | 2013-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposited Material and Method of Formation |
US20130093321A1 (en) | 2010-03-31 | 2013-04-18 | Tokyo Electron Limited | Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus |
US20130095664A1 (en) | 2011-10-12 | 2013-04-18 | ASM International. N.V. | Atomic layer deposition of antimony oxide films |
US20130099318A1 (en) | 2011-10-25 | 2013-04-25 | International Business Machines Corporation | Thin semiconductor-on-insulator mosfet with co-integrated silicon, silicon germanium and silicon doped with carbon channels |
US8430620B1 (en) | 2008-03-24 | 2013-04-30 | Novellus Systems, Inc. | Dedicated hot and cold end effectors for improved throughput |
US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
US20130104992A1 (en) | 2011-10-27 | 2013-05-02 | Asm America, Inc. | Deposition valve assembly and method of heating the same |
US20130104988A1 (en) | 2011-10-27 | 2013-05-02 | Asm America, Inc. | Heater jacket for a fluid line |
US20130109172A1 (en) | 2011-10-28 | 2013-05-02 | Joshua Collins | High temperature tungsten metallization process |
US20130109192A1 (en) | 2011-10-28 | 2013-05-02 | Asm America, Inc. | Susceptor with ring to limit backside deposition |
US8435894B2 (en) | 2009-08-04 | 2013-05-07 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US20130115768A1 (en) | 2008-12-19 | 2013-05-09 | Viljami J. Pore | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
US20130112251A1 (en) | 2011-11-04 | 2013-05-09 | E I Du Pont De Nemours And Company | Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate |
US20130113085A1 (en) | 2011-11-04 | 2013-05-09 | Applied Materials, Inc. | Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium |
US20130115383A1 (en) | 2011-11-08 | 2013-05-09 | Xinliang Lu | Deposition of metal films using alane-based precursors |
US20130115763A1 (en) | 2011-11-04 | 2013-05-09 | ASM International. N.V. | Methods for forming doped silicon oxide thin films |
US20130122712A1 (en) | 2011-11-14 | 2013-05-16 | Jong Mun Kim | Method of etching high aspect ratio features in a dielectric layer |
US20130118405A1 (en) | 2011-11-10 | 2013-05-16 | Henry Ho | Fluid cooled showerhead with post injection mixing |
US20130119018A1 (en) | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
US20130122722A1 (en) | 2010-07-07 | 2013-05-16 | Advanced Technology Materials, Inc. | DOPING OF ZrO2 FOR DRAM APPLICATIONS |
US20130118895A1 (en) | 2010-02-26 | 2013-05-16 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Apparatus and method for reactive ion etching |
US8443484B2 (en) | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US20130130490A1 (en) | 2011-11-22 | 2013-05-23 | Intermolecular, Inc. | Combinatorial approach for screening of ald film stacks |
US20130126515A1 (en) | 2011-11-23 | 2013-05-23 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US20130129577A1 (en) | 2011-11-23 | 2013-05-23 | ASM Holding B.V. | Chamber sealing member |
US20130137279A1 (en) | 2011-11-29 | 2013-05-30 | Hitachi Kokusai Electric Inc. | Exhaust Unit, Substrate Processing Apparatus, and Method of Manufacturing Semiconductor Device |
US20130134148A1 (en) | 2011-11-25 | 2013-05-30 | Nhk Spring Co., Ltd. | Substrate support device |
US20130143401A1 (en) | 2011-06-03 | 2013-06-06 | Jengyi Yu | Metal and silicon containing capping layers for interconnects |
US20130143415A1 (en) | 2011-12-01 | 2013-06-06 | Applied Materials, Inc. | Multi-Component Film Deposition |
US20130145984A1 (en) | 2010-08-31 | 2013-06-13 | Chao Zhang | Method of epitaxial growth effectively preventing auto-doping effect |
US20130145587A1 (en) | 2011-12-07 | 2013-06-13 | Intermolecular, Inc. | Vertically retractable flow cell system |
US20130149874A1 (en) | 2011-12-09 | 2013-06-13 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium |
US20130147050A1 (en) | 2011-12-12 | 2013-06-13 | Advanced Cooling Technologies, Inc. | Semiconductor having integrally-formed enhanced thermal management |
US8466411B2 (en) | 2011-03-03 | 2013-06-18 | Asm Japan K.K. | Calibration method of UV sensor for UV curing |
US20130152933A1 (en) | 2010-08-10 | 2013-06-20 | The Regents Of The University Of California, A California Corporation | Automated fluid delivery system and method |
US20130157521A1 (en) | 2011-12-14 | 2013-06-20 | Alvah Benjamin Aldrich | Lockout tagout plug sleeve |
US20130157409A1 (en) | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
US8470718B2 (en) | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
US8470187B2 (en) | 2010-11-05 | 2013-06-25 | Asm Japan K.K. | Method of depositing film with tailored comformality |
KR20130067600A (en) | 2011-12-14 | 2013-06-25 | 주식회사 케이씨텍 | Atomic layer deposition apparatus providing direct palsma |
US20130160709A1 (en) | 2011-12-27 | 2013-06-27 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
US20130162142A1 (en) | 2011-12-05 | 2013-06-27 | Tocalo Co., Ltd. | Plasma processing apparatus and method |
US20130161629A1 (en) | 2011-12-27 | 2013-06-27 | Applied Materials, Inc. | Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application |
US20130164458A1 (en) | 2010-08-30 | 2013-06-27 | Beneq Oy | Apparatus and method |
US20130168353A1 (en) | 2010-10-08 | 2013-07-04 | Shogo Okita | Plasma processing method for substrates |
US20130171818A1 (en) | 2011-12-29 | 2013-07-04 | Samsung Electronics Co., Ltd. | Method of Manufacturing A Semiconductor Device |
US20130168354A1 (en) | 2011-12-28 | 2013-07-04 | Keren Jacobs Kanarik | Mixed mode pulsing etching in plasma processing systems |
US20130175596A1 (en) | 2012-01-06 | 2013-07-11 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
US20130177706A1 (en) | 2012-01-09 | 2013-07-11 | Sanjeev Baluja | Method for seasoning uv chamber optical components to avoid degradation |
TW201330086A (en) | 2012-01-05 | 2013-07-16 | Duan-Ren Yu | Etching apparatus |
US8484846B2 (en) | 2008-08-15 | 2013-07-16 | Lam Research Corporation | Method of joining components for a composite showerhead electrode assembly for a plasma processing apparatus |
US20130183814A1 (en) | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Method of depositing a silicon germanium tin layer on a substrate |
US20130180448A1 (en) | 2011-07-15 | 2013-07-18 | Tokyo Electron Limited | Substrate transfer device and substrate processing system |
US20130189635A1 (en) | 2012-01-25 | 2013-07-25 | First Solar, Inc. | Method and apparatus providing separate modules for processing a substrate |
US20130189854A1 (en) | 2012-01-20 | 2013-07-25 | Dennis Hausmann | Method for depositing a chlorine-free conformal sin film |
US20130186340A1 (en) | 2012-01-25 | 2013-07-25 | Ulvac, Inc. | Vacuum Film Forming Apparatus |
US8496756B2 (en) | 2010-04-30 | 2013-07-30 | Applied Materials, Inc. | Methods for processing substrates in process systems having shared resources |
US8496377B2 (en) | 2007-12-31 | 2013-07-30 | Covidien Lp | Thermometer having molded probe component |
US8497213B2 (en) | 2007-01-16 | 2013-07-30 | Hitachi High-Technologies Corporation | Plasma processing method |
US20130196502A1 (en) | 2011-12-09 | 2013-08-01 | ASM International. N.V. | Selective formation of metallic films on metallic surfaces |
US20130196507A1 (en) | 2012-01-31 | 2013-08-01 | Paul F. Ma | Method Of Depositing Metals Using High Frequency Plasma |
US8501599B2 (en) | 2006-03-07 | 2013-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US20130203267A1 (en) | 2012-02-06 | 2013-08-08 | Asm Ip Holding B.V. | Multiple vapor sources for vapor deposition |
US20130202387A1 (en) | 2010-08-06 | 2013-08-08 | Tokyo Electron Limited | Substrate processing system, transfer module, substrate processing method, and method for manufacturing semiconductor element |
US20130203258A1 (en) | 2012-02-05 | 2013-08-08 | Tokyo Electron Limited | Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof |
US20130203266A1 (en) | 2012-02-02 | 2013-08-08 | Globalfoundries Inc. | Methods of Forming Metal Nitride Materials |
US20130200518A1 (en) | 2012-01-26 | 2013-08-08 | Khaled Z. Ahmed | Devices Including Metal-Silicon Contacts Using Indium Arsenide Films and Apparatus and Methods |
US8506162B2 (en) | 2005-12-05 | 2013-08-13 | Parker-Hannifin Corporation | Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications |
US8507720B2 (en) | 2010-01-29 | 2013-08-13 | Lyondell Chemical Technology, L.P. | Titania-alumina supported palladium catalyst |
US20130206066A1 (en) | 2012-01-26 | 2013-08-15 | Samsung Electronics Co., Ltd. | Thin film deposition apparatus |
US20130209940A1 (en) | 2010-10-21 | 2013-08-15 | Nissan Chemical Industries, Ltd. | Composition for forming resist overlayer film for euv lithography |
US20130210241A1 (en) | 2012-02-14 | 2013-08-15 | Novellus Systems Inc. | Precursors for Plasma Activated Conformal Film Deposition |
US20130217239A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
US20130217241A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
US20130213300A1 (en) | 2012-02-16 | 2013-08-22 | Ki Bum SUNG | Semiconductor manufacturing apparatus |
US20130217243A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
US20130217240A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-carbon-nitrogen layers for semiconductor processing |
US20130214232A1 (en) | 2012-02-17 | 2013-08-22 | Intermolecular, Inc. | Nonvolatile memory device using a varistor as a current limiter element |
US20130216710A1 (en) | 2010-09-21 | 2013-08-22 | Ulvac, Inc. | Thin film forming method and thin film forming apparatus |
US20130219853A1 (en) | 2012-02-29 | 2013-08-29 | David A. Little | Mid-section of a can-annular gas turbine engine with an improved rotation of air flow from the compressor to the turbine |
US20130220550A1 (en) | 2012-02-29 | 2013-08-29 | Semes Co., Ltd. | Plasma boundary limiter unit and apparatus for treating substrate |
US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
US20130228225A1 (en) | 2012-03-01 | 2013-09-05 | Novellus Systems, Inc. | Sequential cascading of reaction volumes as a chemical reuse strategy |
US20130228902A1 (en) | 2010-12-10 | 2013-09-05 | Teijin Limited | Semiconductor laminate, semiconductor device, and production method thereof |
US20130230814A1 (en) | 2012-03-02 | 2013-09-05 | Asm Ip Holding B.V. | Susceptor heater shim |
US20130230987A1 (en) | 2012-03-05 | 2013-09-05 | Nerissa Draeger | Flowable oxide film with tunable wet etch rate |
US8529701B2 (en) | 2008-08-28 | 2013-09-10 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US20130234203A1 (en) | 2012-03-08 | 2013-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices and Methods of Manufacture Thereof |
US8535767B1 (en) | 2012-04-18 | 2013-09-17 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation |
US20130242287A1 (en) | 2012-03-15 | 2013-09-19 | Applied Materials, Inc. | Process and Apparatus for Measuring the Crystal Fraction of Crystalline Silicon Casted Mono Wafers |
US20130247937A1 (en) | 2012-03-05 | 2013-09-26 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and its maintenance method, substrate transfer method and program |
JP2013196822A (en) | 2012-03-16 | 2013-09-30 | Mitsui Eng & Shipbuild Co Ltd | Plasma generation method, thin-film formation method using the same, and plasma generation device |
US20130260371A1 (en) | 2012-04-02 | 2013-10-03 | Lux Bio Group, Inc. | Apparatus and method for molecular separation, purification, and sensing |
US20130256838A1 (en) | 2012-04-02 | 2013-10-03 | Errol Antonio C. Sanchez | Method of epitaxial doped germanium tin alloy formation |
US20130256265A1 (en) | 2011-03-24 | 2013-10-03 | Uchicago Argonne Llc | Sequential Infiltration Synthesis for Enhancing Multiple-Patterning Lithography |
US20130256962A1 (en) | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
US8551892B2 (en) | 2011-07-27 | 2013-10-08 | Asm Japan K.K. | Method for reducing dielectric constant of film using direct plasma of hydrogen |
US20130264659A1 (en) | 2012-04-04 | 2013-10-10 | Asm Ip Holdings B.V. | Metal Oxide Protective Layer for a Semiconductor Device |
US20130267045A1 (en) | 2012-04-04 | 2013-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shower head apparatus and method for controllign plasma or gas distribution |
US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
US20130273330A1 (en) | 2012-04-16 | 2013-10-17 | Brewer Science Inc. | Silicon hardmask layer for directed self-assembly |
US20130270600A1 (en) | 2012-04-13 | 2013-10-17 | Michael Helander | Functionalization of a Substrate |
US20130269609A1 (en) | 2012-04-13 | 2013-10-17 | Novellus Systems, Inc. | Carousel reactor for multi-station, sequential processing systems |
US20130270676A1 (en) | 2011-12-14 | 2013-10-17 | Nick Lindert | Metal-insulator-metal (mim) capacitor with insulator stack having a plurality of metal oxide layers |
US20130269612A1 (en) | 2012-04-16 | 2013-10-17 | Hermes-Epitek Corporation | Gas Treatment Apparatus with Surrounding Spray Curtains |
US8562272B2 (en) | 2010-02-16 | 2013-10-22 | Lam Research Corporation | Substrate load and unload mechanisms for high throughput |
USD691974S1 (en) | 2011-12-22 | 2013-10-22 | Tokyo Electron Limited | Holding pad for transferring a wafer |
US20130280891A1 (en) | 2012-04-20 | 2013-10-24 | Yihwan Kim | Method and apparatus for germanium tin alloy formation by thermal cvd |
US20130276978A1 (en) | 2012-04-19 | 2013-10-24 | Intevac, Inc. | Dual-mask arrangement for solar cell fabrication |
US20130287526A1 (en) | 2012-04-26 | 2013-10-31 | Intevac, Inc. | System architecture for vacuum processing |
US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
US20130288471A1 (en) | 2012-04-25 | 2013-10-31 | Globalfoundries Inc. | Methods of forming self-aligned contacts for a semiconductor device |
US20130288480A1 (en) | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
US20130285155A1 (en) | 2011-12-20 | 2013-10-31 | Glenn A. Glass | Iii-v layers for n-type and p-type mos source-drain contacts |
US20130288427A1 (en) | 2012-04-25 | 2013-10-31 | Steven Hung | Methods Of Fabricating Dielectric Films From Metal Amidinate Precursors |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
US8573154B2 (en) | 2010-01-13 | 2013-11-05 | Honda Motor Co., Ltd. | Plasma film forming apparatus |
US20130292807A1 (en) | 2012-05-07 | 2013-11-07 | Asm Ip Holdings B.V. | Semiconductor Device Dielectric Interface Layer |
US20130295779A1 (en) | 2012-04-12 | 2013-11-07 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
US20130292047A1 (en) | 2006-01-20 | 2013-11-07 | Tokyo Electron Limited | Manufacturing method of top plate of plasma processing apparatus |
US20130292676A1 (en) | 2012-05-02 | 2013-11-07 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
USD693200S1 (en) | 2012-08-28 | 2013-11-12 | Lee Valley Tools, Ltd. | Bench stop |
US20130302520A1 (en) | 2012-05-11 | 2013-11-14 | Kai-An Wang | Co-evaporation system comprising vapor pre-mixer |
US20130299944A1 (en) | 2012-05-14 | 2013-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Bipolar Junction Transistors and Resistors |
US20130302999A1 (en) | 2012-05-10 | 2013-11-14 | Tae Kyung Won | Siox process chemistry development using microwave plasma cvd |
US20130303803A1 (en) | 2009-11-13 | 2013-11-14 | Basf Se | Method for purifying a chlorine supply |
USD693782S1 (en) | 2012-11-19 | 2013-11-19 | Epicrew Corporation | Lid for epitaxial growing device |
JP2013235912A (en) | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | Method for etching substrate to be processed and plasma etching device |
US20130309876A1 (en) | 2010-11-29 | 2013-11-21 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus |
US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
KR20130129149A (en) | 2012-05-18 | 2013-11-27 | 노벨러스 시스템즈, 인코포레이티드 | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US20130312663A1 (en) | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
US20130313656A1 (en) | 2012-05-24 | 2013-11-28 | Intermolecular, Inc. | Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics |
WO2013177269A2 (en) | 2012-05-25 | 2013-11-28 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Zirconium-containing precursors for vapor deposition |
USD694790S1 (en) | 2011-09-20 | 2013-12-03 | Tokyo Electron Limited | Baffle plate for manufacturing semiconductor |
US20130319290A1 (en) | 2012-06-01 | 2013-12-05 | Air Products And Chemicals, Inc. | Organoaminodisilane precursors and methods for depositing films comprising same |
US20130320429A1 (en) | 2012-05-31 | 2013-12-05 | Asm Ip Holding B.V. | Processes and structures for dopant profile control in epitaxial trench fill |
US20130323859A1 (en) | 2012-06-01 | 2013-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of monitoring and controlling atomic layer deposition of tungsten |
US20130323935A1 (en) | 2012-06-02 | 2013-12-05 | Tokyo Electron Limited | Film forming method and apparatus |
US20130323435A1 (en) | 2012-06-01 | 2013-12-05 | Air Products And Chemicals, Inc. | Organoaminodisilane precursors and methods for depositing films comprising same |
USD695240S1 (en) | 2011-10-20 | 2013-12-10 | Tokyo Electron Limited | Arm for wafer transportation for manufacturing semiconductor |
US20130330165A1 (en) | 2010-12-20 | 2013-12-12 | Ev Group E. Thallner Gmbh | Accommodating device for retaining wafers |
US20130330933A1 (en) | 2012-06-11 | 2013-12-12 | Asm Ip Holding B.V. | Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control |
US20130330911A1 (en) | 2012-06-08 | 2013-12-12 | Yi-Chiau Huang | Method of semiconductor film stabilization |
US20130337172A1 (en) | 2012-06-19 | 2013-12-19 | Synos Technology, Inc. | Reactor in deposition device with multi-staged purging structure |
US20130337653A1 (en) | 2012-06-15 | 2013-12-19 | Asm Ip Holding B.V. | Semiconductor processing apparatus with compact free radical source |
US20130337583A1 (en) | 2012-05-31 | 2013-12-19 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by cyclic processes |
US20130337639A1 (en) | 2012-06-13 | 2013-12-19 | Ostendo Technologies, Inc. | Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy |
US20130340678A1 (en) | 2012-06-25 | 2013-12-26 | Tokyo Electron Limited | Gas supply apparatus and film forming apparatus |
US20130340619A1 (en) | 2011-03-01 | 2013-12-26 | Robert F. Tammera | Apparatus and Systems Having a Reciprocating Valve Head Assembly and Swing Adsorption Processes Related Thereto |
US20130344248A1 (en) | 2012-06-22 | 2013-12-26 | Tokyo Electron Limited | Method for depositing dielectric films |
US8617411B2 (en) | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
US20140000843A1 (en) | 2012-06-27 | 2014-01-02 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US20140004274A1 (en) | 2012-06-29 | 2014-01-02 | David Thompson | Deposition Of Films Containing Alkaline Earth Metals |
US20140001520A1 (en) | 2012-06-29 | 2014-01-02 | Glenn A. Glass | Contact resistance reduced p-mos transistors employing ge-rich contact layer |
US8623770B1 (en) | 2013-02-21 | 2014-01-07 | HGST Netherlands B.V. | Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide |
USD697038S1 (en) | 2011-09-20 | 2014-01-07 | Tokyo Electron Limited | Baffle plate |
KR101347962B1 (en) | 2011-12-13 | 2014-01-08 | 주식회사 케이씨텍 | Atomic layer deposition method of improving film properties |
US20140007808A1 (en) | 2011-07-05 | 2014-01-09 | Epicrew Corporation | Susceptor Device And Deposition Apparatus Having The Same |
CN103515222A (en) | 2012-06-25 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Top metal-layer groove etching method |
US20140014644A1 (en) | 2011-03-28 | 2014-01-16 | Tokyo Electron Limited | Heating Device |
US20140017414A1 (en) | 2012-07-16 | 2014-01-16 | Asm Ip Holding B.V. | Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group |
US20140015108A1 (en) | 2011-03-28 | 2014-01-16 | Sang-hee Kim | Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby |
US20140017908A1 (en) | 2012-07-11 | 2014-01-16 | Asm Ip Holding B.V. | Method for Forming Conformal, Homogeneous Dielectric Film by Cyclic Deposition and Heat Treatment |
US20140017408A1 (en) | 2012-07-06 | 2014-01-16 | Srinivas Gandikota | Deposition Of N-Metal Films Comprising Aluminum Alloys |
US20140015186A1 (en) | 2012-07-12 | 2014-01-16 | Wolf Robotics, Llc | Configurable welding table and force indicating clamp |
US20140014642A1 (en) | 2012-06-12 | 2014-01-16 | Component Re-Engineering Company, Inc. | Multiple Zone Heater |
US8633115B2 (en) | 2011-11-30 | 2014-01-21 | Applied Materials, Inc. | Methods for atomic layer etching |
US20140020839A1 (en) | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with symmetrical rf feed |
US20140020619A1 (en) | 2011-03-31 | 2014-01-23 | Benjamin Vincent | Method for Growing a Monocrystalline Tin-Containing Semiconductor Material |
US20140024223A1 (en) | 2011-04-07 | 2014-01-23 | Picosun Oy | Atomic Layer Deposition with Plasma Source |
US20140020764A1 (en) | 2012-07-18 | 2014-01-23 | Rohm And Haas Electronic Materials Llc | Vapor Delivery Device, Methods of Manufacture And Methods of Use Thereof |
US20140023794A1 (en) | 2012-07-23 | 2014-01-23 | Maitreyee Mahajani | Method And Apparatus For Low Temperature ALD Deposition |
US8637384B2 (en) | 2011-10-13 | 2014-01-28 | International Business Machines Corporation | FinFET parasitic capacitance reduction using air gap |
US20140027884A1 (en) | 2012-07-27 | 2014-01-30 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US20140030447A1 (en) | 2012-01-17 | 2014-01-30 | Synos Technology, Inc. | Deposition of Graphene or Conjugated Carbons Using Radical Reactor |
USD698904S1 (en) | 2012-02-08 | 2014-02-04 | Asm Ip Holding B.V. | Vacuum flange ring |
US20140033978A1 (en) | 2012-08-02 | 2014-02-06 | Asm Ip Holding B.V. | Method of Parallel Shift Operation of Multiple Reactors |
US20140036274A1 (en) | 2012-07-31 | 2014-02-06 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US20140034632A1 (en) | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
US20140034240A1 (en) | 2012-07-31 | 2014-02-06 | Semes Co., Ltd. | Apparatus for treating substrate |
US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
US20140045342A1 (en) | 2012-08-08 | 2014-02-13 | Applied Materials | Flowable carbon for semiconductor processing |
US20140045324A1 (en) | 2011-05-19 | 2014-02-13 | Matheson Tri-Gas, Inc. | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor |
US8651788B1 (en) | 2012-09-06 | 2014-02-18 | Horst Budde | Variable-length, adjustable spacer |
US20140047705A1 (en) | 2009-10-21 | 2014-02-20 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
US20140048765A1 (en) | 2012-08-16 | 2014-02-20 | Xiaolong Ma | Semiconductor device and method for manufacturing the same |
US20140056770A1 (en) | 2012-08-21 | 2014-02-27 | Uop Llc | Methane conversion apparatus and process using a supersonic flow reactor |
US20140057187A1 (en) | 2011-12-07 | 2014-02-27 | Panasonic Corporation | Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system |
US20140053866A1 (en) | 2012-08-23 | 2014-02-27 | Applied Materials, Inc. | Method and hardware for cleaning uv chambers |
US20140057454A1 (en) | 2007-08-31 | 2014-02-27 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
US20140058179A1 (en) | 2012-08-21 | 2014-02-27 | Uop Llc | Pyrolytic reactor |
US20140056679A1 (en) | 2011-04-15 | 2014-02-27 | Tazmo Co., Ltd. | Wafer exchange apparatus and wafer supporting hand |
US8664627B1 (en) | 2012-08-08 | 2014-03-04 | Asm Ip Holding B.V. | Method for supplying gas with flow rate gradient over substrate |
US20140065841A1 (en) | 2012-09-05 | 2014-03-06 | Asm Ip Holding B.V. | ATOMIC LAYER DEPOSITION OF GeO2 |
US20140062304A1 (en) | 2012-09-05 | 2014-03-06 | Asm Ip Holding B.V. | Method for Stabilizing Plasma Ignition |
US20140060572A1 (en) | 2012-08-30 | 2014-03-06 | Tokyo Electron Limited | Plasma processing apparatus and cleaning method for removing metal oxide film |
US20140061770A1 (en) | 2008-12-26 | 2014-03-06 | SK Hynix Inc. | Nonvolatile memory device |
US20140060147A1 (en) | 2012-08-28 | 2014-03-06 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US20140067110A1 (en) | 2012-08-28 | 2014-03-06 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US8668957B2 (en) | 2006-06-02 | 2014-03-11 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming dielectric films, new precursors and their use in semiconductor manufacturing |
US20140073143A1 (en) | 2012-09-12 | 2014-03-13 | Asm Ip Holdings B.V. | Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor |
US20140073082A1 (en) | 2011-05-31 | 2014-03-13 | Semics Inc. | Method of manufacturing light - absorbtion layer of solar cell through selenization process under elemental selenium vapor atmosphere and thermal processing apparatus for manufacturing light - absorbing layer |
US20140072710A1 (en) | 2011-03-14 | 2014-03-13 | Petroceramics S.P.A. | Method for the Infiltration of a Porous Material with a Second Material Related Plant |
US20140072726A1 (en) | 2012-09-11 | 2014-03-13 | Asm Ip Holding B.V. | Deposition apparatus and method of depositing thin film using the same |
US20140072925A1 (en) | 2012-09-13 | 2014-03-13 | Tokyo Electron Limited | Heat treatment apparatus |
US20140076861A1 (en) | 2012-09-19 | 2014-03-20 | Carrie E. Cornelius | Atmospheric-pressure plasma processing apparatus and method |
US20140080314A1 (en) | 2012-09-18 | 2014-03-20 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20140077240A1 (en) | 2012-09-17 | 2014-03-20 | Radek Roucka | Iv material photonic device on dbr |
US20140087490A1 (en) | 2012-09-25 | 2014-03-27 | Intermolecular, Inc. | Method and Apparatus for Improving Particle Performance |
US20140087564A1 (en) | 2012-09-21 | 2014-03-27 | Tokyo Electron Limited | Plasama processing apparatus and plasma processing method |
US20140087544A1 (en) | 2012-09-24 | 2014-03-27 | Asm America, Inc. | Tin precursors for vapor deposition and deposition processes |
US20140084341A1 (en) | 2012-09-26 | 2014-03-27 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US8683943B2 (en) | 2009-05-01 | 2014-04-01 | Tokyo Electron Limited | Plasma process apparatus and plasma process method |
US20140094027A1 (en) | 2012-10-03 | 2014-04-03 | Osaka University | Film forming method and film forming apparatus |
USD702188S1 (en) | 2013-03-08 | 2014-04-08 | Asm Ip Holding B.V. | Thermocouple |
US20140099798A1 (en) | 2012-10-05 | 2014-04-10 | Asm Ip Holding B.V. | UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same |
US20140096716A1 (en) | 2012-10-05 | 2014-04-10 | Asm Ip Holding B.V. | Heating/Cooling Pedestal for Semiconductor-Processing Apparatus |
US20140097468A1 (en) | 2011-07-12 | 2014-04-10 | Panasonic Corporation | Nitride semiconductor device and method for manufacturing same |
US20140099794A1 (en) | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
US8697198B2 (en) | 2011-03-31 | 2014-04-15 | Veeco Ald Inc. | Magnetic field assisted deposition |
US20140106574A1 (en) | 2010-04-15 | 2014-04-17 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite peald and pecvd method |
US20140103145A1 (en) | 2012-10-12 | 2014-04-17 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US8703002B2 (en) | 2007-08-17 | 2014-04-22 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US20140113457A1 (en) | 2010-04-15 | 2014-04-24 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US20140110798A1 (en) | 2012-10-22 | 2014-04-24 | Globalfoundries Inc. | Methods of forming a semiconductor device with low-k spacers and the resulting device |
US8710580B2 (en) | 2011-11-29 | 2014-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US8709162B2 (en) | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US8711338B2 (en) | 2009-10-16 | 2014-04-29 | Msp Corporation | Apparatus for counting particles in a gas |
US20140120738A1 (en) | 2012-11-01 | 2014-05-01 | Asm Ip Holding B.V. | Method of depositing thin film |
US20140120723A1 (en) | 2012-10-26 | 2014-05-01 | Xinyu Fu | Methods for depositing fluorine/carbon-free conformal tungsten |
US20140120312A1 (en) | 2012-10-29 | 2014-05-01 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Coating packaged chamber parts for semiconductor plasma apparatus |
US20140120750A1 (en) | 2012-10-31 | 2014-05-01 | International Business Machines Corporation | Implementing reconfigurable power connector for multiple wiring configurations |
US20140120487A1 (en) | 2012-10-31 | 2014-05-01 | Tokyo Electron Limited | Heat treatment apparatus |
US20140116335A1 (en) | 2012-10-31 | 2014-05-01 | Asm Ip Holding B.V. | UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus |
US20140120678A1 (en) | 2012-10-29 | 2014-05-01 | Matheson Tri-Gas | Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures |
US20140117380A1 (en) | 2012-10-26 | 2014-05-01 | Dow Corning Corporation | Flat sic semiconductor substrate |
US20140127422A1 (en) | 2012-11-02 | 2014-05-08 | Intermolecular, Inc. | Method and Apparatus for High-K Gate Performance Improvement and Combinatorial Processing |
US20140127907A1 (en) | 2012-11-08 | 2014-05-08 | Micron Technology, Inc. | Methods of forming semiconductor structures and related sulfur dioxide etch chemistries |
US8720965B2 (en) | 2011-09-26 | 2014-05-13 | Kabushiki Kaisha Yaskawa Denki | Robot hand and robot |
US8722510B2 (en) | 2010-07-29 | 2014-05-13 | Tokyo Electron Limited | Trench-filling method and film-forming system |
US8721791B2 (en) | 2010-07-28 | 2014-05-13 | Applied Materials, Inc. | Showerhead support structure for improved gas flow |
US20140130687A1 (en) | 2011-07-01 | 2014-05-15 | Taiyo Chemical Industry Co., Ltd. | Primer composition, structure including primer layer composed of the composition, and method of producing the structure |
US8726837B2 (en) | 2008-06-23 | 2014-05-20 | Applied Materials, Inc. | Semiconductor process chamber vision and monitoring system |
US20140141625A1 (en) | 2012-11-16 | 2014-05-22 | Asm Ip Holding B.V. | Method for Forming Insulation Film Using Non-Halide Precursor Having Four or More Silicons |
US20140138779A1 (en) | 2012-11-20 | 2014-05-22 | GlobalFoundries, Inc. | Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance |
US20140141165A1 (en) | 2011-05-27 | 2014-05-22 | Hiroki Sato | Method for manufacturing molybdenum oxide-containing thin film, starting material for forming molybdenum oxide-containing thin film, and molybdenum amide compound |
US20140141674A1 (en) | 2012-11-16 | 2014-05-22 | Liquipel IP, LLC | Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings |
USD705762S1 (en) | 2012-07-04 | 2014-05-27 | Sercomm Corporation | Communication device having multi-module assembly |
USD705745S1 (en) | 2013-07-08 | 2014-05-27 | Witricity Corporation | Printed resonator coil |
US20140148924A1 (en) | 2012-11-29 | 2014-05-29 | Asm Ip Holding B.V. | Scheduler for processing system |
US20140144375A1 (en) | 2011-08-02 | 2014-05-29 | Eugene Technology Co., Ltd. | Equipment for manufacturing semiconductor |
US20140147587A1 (en) | 2012-11-27 | 2014-05-29 | Intermolecular, Inc. | Combinatorial Spin Deposition |
US20140145332A1 (en) | 2012-11-26 | 2014-05-29 | Globalfoundries Inc. | Methods of forming graphene liners and/or cap layers on copper-based conductive structures |
US20140144500A1 (en) | 2010-11-22 | 2014-05-29 | E I Du Pont De Nemours And Company | Semiconductor inks films, coated substrates and methods of preparation |
US8741062B2 (en) | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
US8741065B2 (en) | 2010-06-30 | 2014-06-03 | Tokyo Electron Limited | Substrate processing apparatus |
US20140158154A1 (en) | 2012-12-12 | 2014-06-12 | Tokyo Electron Limited | Method of modifying electrostatic chuck and plasma processing apparatus |
US20140162401A1 (en) | 2011-08-19 | 2014-06-12 | Tokyo Electron Limited | Ge-Sb-Te FILM FORMING METHOD, Ge-Te FILM FORMING METHOD, AND Sb-Te FILM FORMING METHOD |
US20140158786A1 (en) | 2012-12-07 | 2014-06-12 | LGS Innovations LLC | Gas dispersion disc assembly |
US20140170320A1 (en) | 2012-12-18 | 2014-06-19 | Tokyo Electron Limited | Thin film forming method and thin film forming apparatus |
US20140167187A1 (en) | 2012-12-19 | 2014-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | N Metal for FinFET |
US20140170335A1 (en) | 2012-12-17 | 2014-06-19 | Intermolecular, Inc. | Methods and Apparatus for Combinatorial PECVD or PEALD |
US8759223B2 (en) | 2011-08-26 | 2014-06-24 | Applied Materials, Inc. | Double patterning etching process |
US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
US20140179091A1 (en) | 2011-03-31 | 2014-06-26 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
US20140174354A1 (en) | 2012-12-26 | 2014-06-26 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20140174357A1 (en) | 2011-08-02 | 2014-06-26 | Eugene Technology Co., Ltd. | Equipment for manufacturing semiconductor |
US20140179092A1 (en) | 2012-12-26 | 2014-06-26 | SK Hynix Inc. | Method for forming void-free polysilicon and method for fabricating semiconductor device using the same |
US20140174927A1 (en) | 2011-07-27 | 2014-06-26 | Rashid Bashir | Nanopore Sensors for Biomolecular Characterization |
US20140175054A1 (en) | 2006-11-21 | 2014-06-26 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature cvd systems |
US8764085B2 (en) | 2012-10-19 | 2014-07-01 | Sinfonia Technology Co., Ltd. | Clamping device and workpiece conveying robot |
US20140187045A1 (en) | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
US20140182053A1 (en) | 2012-12-29 | 2014-07-03 | Alexander Yeh Industry Co., Ltd. | Pullable drain plug |
US20140182689A1 (en) | 2012-12-31 | 2014-07-03 | Lam Research Corporation | Gas supply systems for substrate processing chambers and methods therefor |
US20140187022A1 (en) | 2012-12-31 | 2014-07-03 | Sunedison, Inc. | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension |
US8771791B2 (en) | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
US20140191389A1 (en) | 2013-01-07 | 2014-07-10 | SK Hynix Inc. | Semiconductor device and method of manufacturing the same |
US20140190581A1 (en) | 2011-07-08 | 2014-07-10 | Fujikin Incorporated | Raw material gas supply apparatus for semiconductor manufacturing equipment |
US20140193983A1 (en) | 2013-01-10 | 2014-07-10 | Adrien Lavoie | APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS |
US8779502B2 (en) | 2009-06-12 | 2014-07-15 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory |
CN203721699U (en) | 2014-02-20 | 2014-07-16 | 北京七星华创电子股份有限公司 | Disk-like object holding device and disk-like object rotating platform < |
USD709537S1 (en) | 2011-09-30 | 2014-07-22 | Tokyo Electron Limited | Focusing ring |
USD709536S1 (en) | 2011-09-30 | 2014-07-22 | Tokyo Electron Limited | Focusing ring |
US8785311B2 (en) | 2010-09-13 | 2014-07-22 | Tokyo Electron Limited | Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor |
US8784676B2 (en) | 2012-02-03 | 2014-07-22 | Lam Research Corporation | Waferless auto conditioning |
US20140202382A1 (en) | 2013-01-21 | 2014-07-24 | Asm Ip Holding B.V. | Deposition apparatus |
US20140202386A1 (en) | 2013-01-24 | 2014-07-24 | Tokyo Electron Limited | Substrate processing apparatus and susceptor |
US20140202388A1 (en) | 2008-09-30 | 2014-07-24 | Eugene Technology Co., Ltd. | Shower head unit and chemical vapor deposition apparatus |
US8790749B2 (en) | 2010-04-16 | 2014-07-29 | Zuzana {hacek over (S)}kutchanová | Method for providing a grinding surface on glass implements used in personal care |
US8790743B1 (en) | 2013-03-04 | 2014-07-29 | Asm Ip Holding B.V. | Method for controlling cyclic plasma-assisted process |
US20140213061A1 (en) | 2013-01-30 | 2014-07-31 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
US20140209976A1 (en) | 2013-01-25 | 2014-07-31 | Samsung Electronics Co., Ltd. | Transistors and methods of manufacturing the same |
US20140220247A1 (en) | 2013-02-01 | 2014-08-07 | Asm Ip Holding B.V. | Method and system for treatment of deposition reactor |
US20140227861A1 (en) | 2013-02-08 | 2014-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom-Up PEALD Process |
US20140225065A1 (en) | 2011-12-23 | 2014-08-14 | Willy Rachmady | Non-planar gate all-around device and method of fabrication thereof |
US20140227881A1 (en) | 2013-02-08 | 2014-08-14 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US20140227072A1 (en) | 2013-02-14 | 2014-08-14 | Samsung Electronics Co., Ltd. | Wafer transfer blade and wafer transfer apparatus having the same |
US20140227444A1 (en) | 2013-02-13 | 2014-08-14 | Wayne State University | Synthesis And Characterization Of First Row Transition Metal Complexes Containing a-Imino Alkoxides As Precursors For Deposition Of Metal Films |
US20140234992A1 (en) | 2011-09-27 | 2014-08-21 | Tokyo Electron Limited | Plasma etching method and semiconductor device manufacturing method |
US20140234550A1 (en) | 2011-07-06 | 2014-08-21 | Wayne State University | Atomic layer deposition of transition metal thin films |
TWD162593S (en) | 2013-03-05 | 2014-08-21 | 東京威力科創股份有限公司 | Probe card case |
US20140234466A1 (en) | 2013-02-21 | 2014-08-21 | HGST Netherlands B.V. | Imprint mold and method for making using sidewall spacer line doubling |
US20140231922A1 (en) | 2013-02-19 | 2014-08-21 | GlobalFoundries, Inc. | Semiconductor gate structure for threshold voltage modulation and method of making same |
US20140238607A1 (en) | 2013-02-25 | 2014-08-28 | Tokyo Electron Limited | Plasma processing apparatus |
US20140242808A1 (en) | 2011-09-07 | 2014-08-28 | Tokyo Electron Limited | Semiconductor device manufacturing method and substrate processing system |
US20140242298A1 (en) | 2011-09-27 | 2014-08-28 | American Air Liquide, Inc. | Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions |
US20140242806A1 (en) | 2013-02-28 | 2014-08-28 | David Knapp | Metal Amide Deposition Precursors And Their Stabilization With An Inert Ampoule Liner |
US20140238608A1 (en) | 2013-02-28 | 2014-08-28 | Novellus Systems, Inc. | Ceramic showerhead with embedded rf electrode for capacitively coupled plasma reactor |
US8820809B2 (en) | 2012-01-26 | 2014-09-02 | Kabushiki Kaisha Yaskawa Denki | Robot hand and robot |
US8823672B2 (en) | 2012-11-20 | 2014-09-02 | Samsung Display Co., Ltd. | Touch panel display device |
USD712358S1 (en) | 2011-12-09 | 2014-09-02 | Hunter Pacific International Pty Ltd | Electrical connector |
USD712359S1 (en) | 2011-12-09 | 2014-09-02 | Hunter Pacific International Pty Ltd | Electrical connector |
US20140245948A1 (en) | 2011-10-03 | 2014-09-04 | Asml Netherlands B.V. | Method to provide a patterned orientation template for a self-assemblable polymer |
US8828886B2 (en) | 2009-10-05 | 2014-09-09 | Tohoku University | Low dielectric constant insulating film and method for forming the same |
US20140252479A1 (en) | 2013-03-11 | 2014-09-11 | International Business Machines Corporation | Semiconductor fin isolation by a well trapping fin portion |
US20140251954A1 (en) | 2013-03-08 | 2014-09-11 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US20140251788A1 (en) | 2013-03-05 | 2014-09-11 | Applied Materials, Inc. | Methods and apparatus for stable substrate processing with multiple rf power supplies |
US20140252710A1 (en) | 2013-03-06 | 2014-09-11 | Applied Materials, Inc. | Substrate support with integrated vacuum and edge purge conduits |
US20140251953A1 (en) | 2013-03-08 | 2014-09-11 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US20140256160A1 (en) | 2011-11-21 | 2014-09-11 | Hitachi Kokusai Electric Inc. | Apparatus for Manufacturing Semiconductor Device, Method of Manufacturing Semiconductor Device, and Recording Medium |
US20140252134A1 (en) | 2013-03-08 | 2014-09-11 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140273510A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
US20140273497A1 (en) | 2013-03-13 | 2014-09-18 | Intermolecular Inc. | Wet Processing Systems and Methods with Replenishment |
US20140272341A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Thermal treated sandwich structure layer to improve adhesive strength |
US20140273530A1 (en) | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
US20140271081A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Shutter blade and robot blade with cte compensation |
US20140262034A1 (en) | 2011-10-07 | 2014-09-18 | Tokyo Electron Limited | Plasma processing apparatus |
US20140273531A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140265832A1 (en) | 2012-07-20 | 2014-09-18 | Applied Materials, Inc. | Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding |
US20140264297A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Thin film encapsulation-thin ultra high barrier layer for oled application |
US20140263272A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Yttria-based material coated chemical vapor deposition chamber heater |
US20140265090A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Substrate support bushing |
US20140273528A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140262193A1 (en) | 2013-03-13 | 2014-09-18 | Techest Co., Ltd. | Edge ring cooling module for semi-conductor manufacture chuck |
US20140264902A1 (en) | 2013-03-12 | 2014-09-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Novel Patterning Approach for Improved Via Landing Profile |
US20140265097A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Substrate support plate with improved lift pin sealing |
US20140263172A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Resist hardening and development processes for semiconductor device manufacturing |
US20140273428A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
US20140260684A1 (en) | 2013-03-15 | 2014-09-18 | H. Aaron Christmann | Rotatable torque-measuring apparatus and method |
US20140273477A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140264444A1 (en) | 2013-03-13 | 2014-09-18 | International Business Machines Corporation | Stress-enhancing selective epitaxial deposition of embedded source and drain regions |
US20140283747A1 (en) | 2013-03-21 | 2014-09-25 | Tokyo Electron Limited | Plasma processing apparatus and shower plate |
US20140287595A1 (en) | 2013-03-19 | 2014-09-25 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium |
US20140287164A1 (en) | 2011-06-03 | 2014-09-25 | Air Products And Chemicals, Inc. | Compositions and processes for depositing carbon-doped silicon-containing films |
US8845806B2 (en) | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
US20140290573A1 (en) | 2013-03-27 | 2014-10-02 | Epicrew Corporation | Susceptor Support Portion and Epitaxial Growth Apparatus Including Susceptor Support Portion |
US20140290578A1 (en) | 2013-03-28 | 2014-10-02 | Tokyo Electron Limited | Film deposition apparatus |
USD715410S1 (en) | 2012-03-21 | 2014-10-14 | Blucher Metal A/S | Roof drain |
US8860955B2 (en) | 2007-12-27 | 2014-10-14 | Lam Research Corporation | Arrangements and methods for determining positions and offsets |
US8859368B2 (en) | 2012-09-04 | 2014-10-14 | Globalfoundries Inc. | Semiconductor device incorporating a multi-function layer into gate stacks |
US20140306250A1 (en) | 2011-12-01 | 2014-10-16 | Quarkstar Llc | Solid-state lighting device and method of manufacturing same |
US20140308108A1 (en) | 2013-04-10 | 2014-10-16 | Globalfoundries Inc. | System for separately handling different size foups |
US8864202B1 (en) | 2013-04-12 | 2014-10-21 | Varian Semiconductor Equipment Associates, Inc. | Spring retained end effector contact pad |
US8864375B2 (en) | 2007-01-31 | 2014-10-21 | Denso Corporation | Temperature sensor |
US20140312767A1 (en) | 2011-11-11 | 2014-10-23 | Tokyo Electron Limited | Dielectric window for plasma treatment device, and plasma treatment device |
US20140322885A1 (en) | 2013-04-29 | 2014-10-30 | Asm Ip Holding B.V. | Method of making a resistive random access memory device |
US20140322862A1 (en) | 2013-04-29 | 2014-10-30 | Asm Ip Holding B.V. | Method of making a resistive random access memory device with metal-doped resistive switching layer |
US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
USD716742S1 (en) | 2013-09-13 | 2014-11-04 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
US8876974B2 (en) | 2009-07-28 | 2014-11-04 | Ligadp Co., Ltd. | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
US20140327117A1 (en) | 2013-05-03 | 2014-11-06 | Applied Materials, Inc. | Optically tuned hardmask for multi-patterning applications |
US8882923B2 (en) | 2010-07-22 | 2014-11-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20140339981A1 (en) | 2011-12-12 | 2014-11-20 | Tokyo Electron Limited | Antenna for plasma generation, plasma processing apparatus and plasma processing method |
US8895395B1 (en) | 2013-06-06 | 2014-11-25 | International Business Machines Corporation | Reduced resistance SiGe FinFET devices and method of forming same |
US8895108B2 (en) | 2009-02-23 | 2014-11-25 | Veeco Ald Inc. | Method for forming thin film using radicals generated by plasma |
JP2014222693A (en) | 2013-05-13 | 2014-11-27 | 大陽日酸株式会社 | Vapor growth device and component transfer method of the same |
US20140346142A1 (en) | 2013-05-25 | 2014-11-27 | HGST Netherlands B.V. | Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis |
US20140349033A1 (en) | 2013-05-23 | 2014-11-27 | Asm Ip Holding B.V. | Method For Forming Film By Plasma-Assisted Deposition Using Two-Frequency Combined Pulsed RF Power |
US20140349068A1 (en) | 2011-12-16 | 2014-11-27 | Element Six Technologies Limited | Large area optical quality synthetic polycrystalline diaond window |
US20140346600A1 (en) | 2013-05-22 | 2014-11-27 | International Business Machines Corporation | Integrated Circuit Having MOSFET with Embedded Stressor and Method to Fabricate Same |
TWD164568S (en) | 2013-03-05 | 2014-12-01 | 東京威力科創股份有限公司 | Probe card case |
US8900999B1 (en) | 2013-08-16 | 2014-12-02 | Applied Materials, Inc. | Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application |
US20140357090A1 (en) | 2013-05-31 | 2014-12-04 | Asm Ip Holding B.V. | Cyclic aluminum nitride deposition in a batch reactor |
CN104201108A (en) | 2014-08-27 | 2014-12-10 | 上海集成电路研发中心有限公司 | SiGe (silicon germanium) source and drain area manufacturing method |
US20140360430A1 (en) | 2013-06-05 | 2014-12-11 | Veeco Instruments, Inc. | Wafer carrier having thermal uniformity-enhancing features |
US20140363985A1 (en) | 2013-06-07 | 2014-12-11 | Dnf Co., Ltd. | Novel Amino-Silyl Amine Compound, Method for Preparing the Same and Silicon-Containing Thin-Film Using the Same |
US20140363980A1 (en) | 2012-02-17 | 2014-12-11 | Tokyo Electron Limited | Semiconductor device manufacturing method |
US20140363983A1 (en) | 2013-06-07 | 2014-12-11 | Asm Ip Holding B.V. | Method For Filling Recesses Using Pre-Treatment With Hydrocarbon-Containing Gas |
US8912101B2 (en) | 2012-03-15 | 2014-12-16 | Asm Ip Holding B.V. | Method for forming Si-containing film using two precursors by ALD |
US8911553B2 (en) | 2010-10-19 | 2014-12-16 | Applied Materials, Inc. | Quartz showerhead for nanocure UV chamber |
US20140367642A1 (en) | 2012-01-03 | 2014-12-18 | Xidian University | Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing |
US20140367043A1 (en) | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
US20140366804A1 (en) | 2009-08-11 | 2014-12-18 | Veeco Ald Inc. | Performing Atomic Layer Deposition on Large Substrate Using Scanning Reactors |
CN104233226A (en) | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
CN104244620A (en) | 2013-06-19 | 2014-12-24 | 上海微电子装备有限公司 | Intensive assembling cabinet for large semiconductor equipment |
US20140377960A1 (en) | 2009-08-27 | 2014-12-25 | Tokyo Electron Limited | Plasma etching method |
US20150004317A1 (en) | 2012-07-20 | 2015-01-01 | American Air Liquide, Inc. | Organosilane precursors for ald/cvd silicon-containing film applications |
US20150004316A1 (en) | 2013-06-26 | 2015-01-01 | Applied Materials, Inc. | Methods Of Depositing A Metal Alloy Film |
US20150004318A1 (en) | 2012-02-17 | 2015-01-01 | Beneq Oy | Nozzle and nozzle head |
US20150004798A1 (en) | 2013-06-28 | 2015-01-01 | Lam Research Corporation | Chemical deposition chamber having gas seal |
US20150004806A1 (en) | 2006-11-01 | 2015-01-01 | Lam Research Corporation | Low-k oxide deposition by hydrolysis and condensation |
USD720838S1 (en) | 2014-02-04 | 2015-01-06 | Asm Ip Holding B.V. | Shower plate |
US8927906B2 (en) | 2010-02-04 | 2015-01-06 | Tokyo Electron Limited | Heating device, coating/developing system, heating method, coating/developing method, and recording medium having program for executing heating method or coating/developing method |
US20150011095A1 (en) | 2013-07-03 | 2015-01-08 | Lam Research Corporation | Chemical deposition apparatus having conductance control |
US20150007770A1 (en) | 2013-07-03 | 2015-01-08 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
US20150010381A1 (en) | 2013-07-08 | 2015-01-08 | United Microelectronics Corp. | Wafer processing chamber and method for transferring wafer in the same |
US8932802B2 (en) | 2012-02-21 | 2015-01-13 | Applied Materials, Inc. | Atomic layer deposition lithography |
US20150014632A1 (en) | 2013-03-15 | 2015-01-15 | Matthew H. Kim | Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices |
US20150014823A1 (en) | 2012-03-09 | 2015-01-15 | Air Products And Chemicals, Inc. | Compositions and methods for making silicon containing films |
US8937800B2 (en) | 2012-04-24 | 2015-01-20 | Applied Materials, Inc. | Electrostatic chuck with advanced RF and temperature uniformity |
US20150021599A1 (en) | 2012-03-09 | 2015-01-22 | Air Products And Chemicals, Inc. | Barrier materials for display devices |
US20150024567A1 (en) | 2013-01-17 | 2015-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect Reduction for Formation of Epitaxial Layer in Source and Drain Regions |
US20150024609A1 (en) | 2013-07-22 | 2015-01-22 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US8940646B1 (en) | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
CN104307264A (en) | 2014-10-31 | 2015-01-28 | 苏州博菡环保科技有限公司 | Air purifier |
US20150031218A1 (en) | 2012-03-15 | 2015-01-29 | Tokyo Electron Limited | Film forming process and film forming apparatus |
US20150030766A1 (en) | 2013-07-25 | 2015-01-29 | Novellus Systems, Inc. | Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline |
US20150030782A1 (en) | 2013-07-26 | 2015-01-29 | Air Products And Chemicals, Inc. | Volatile dihydropyrazinly and dihydropyrazine metal complexes |
JP2015021175A (en) | 2013-07-19 | 2015-02-02 | 大陽日酸株式会社 | Film production method of metallic thin film |
US8945306B2 (en) | 2008-02-20 | 2015-02-03 | Tokyo Electron Limited | Gas supply device |
US8945339B2 (en) | 2010-10-29 | 2015-02-03 | Tokyo Electron Limited | Film formation apparatus |
CN104342637A (en) | 2013-07-26 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
US20150041431A1 (en) | 2013-08-07 | 2015-02-12 | Ultratech, Inc. | Methods of laser processing photoresist in a gaseous environment |
KR101491726B1 (en) | 2008-10-08 | 2015-02-17 | 주성엔지니어링(주) | Method of gap filling in a semiconductor device |
US8956971B2 (en) | 2010-06-10 | 2015-02-17 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
US20150048485A1 (en) | 2013-08-14 | 2015-02-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
USD723153S1 (en) | 2013-03-08 | 2015-02-24 | Olen Borkholder | Recess ceiling fan bezel |
US20150056815A1 (en) | 2013-08-21 | 2015-02-26 | Tel Epion Inc. | Gcib etching method for adjusting fin height of finfet devices |
WO2015026230A1 (en) | 2013-08-19 | 2015-02-26 | Asm Ip Holding B.V. | Twin-assembly of diverging semiconductor processing systems |
US20150056821A1 (en) | 2013-08-22 | 2015-02-26 | Asm Ip Holding B.V. | Method for Forming SiOCH Film Using Organoaminosilane Annealing |
US8967608B2 (en) | 2011-01-18 | 2015-03-03 | Asahi Glass Company, Limited | Glass substrate-holding tool and method for producing an EUV mask blank by employing the same |
USD723330S1 (en) | 2012-06-11 | 2015-03-03 | Barry Dean York | Debris mask and basin |
US8969934B1 (en) | 2013-09-24 | 2015-03-03 | International Business Machines Corporation | Gate-all-around nanowire MOSFET and method of formation |
US8968989B2 (en) | 2011-11-21 | 2015-03-03 | Brewer Science Inc. | Assist layers for EUV lithography |
US20150064923A1 (en) | 2012-05-25 | 2015-03-05 | Tokyo Electron Limited | Plasma processing device and plasma processing method |
US20150061078A1 (en) | 2013-08-27 | 2015-03-05 | International Business Machines Corporation | Compound semiconductor structure |
US20150072509A1 (en) | 2013-09-06 | 2015-03-12 | Applied Materials, Inc. | Pecvd microcrystalline silicon germanium (sige) |
US20150069354A1 (en) | 2012-04-13 | 2015-03-12 | Oti Lumionics Inc. | Functionalization of a substrate |
USD724553S1 (en) | 2013-09-13 | 2015-03-17 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
US8980006B2 (en) | 2011-01-11 | 2015-03-17 | Dms Co., Ltd. | Apparatus for chemical vapor deposition |
USD724701S1 (en) | 2014-02-04 | 2015-03-17 | ASM IP Holding, B.V. | Shower plate |
US20150079311A1 (en) | 2013-09-19 | 2015-03-19 | Asm Ip Holding B.V. | Method for Forming Oxide Film by Plasma-Assisted Processing |
US20150078874A1 (en) | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Compliant robot blade for defect reduction |
USD725168S1 (en) | 2014-02-04 | 2015-03-24 | Asm Ip Holding B.V. | Heater block |
US20150087154A1 (en) | 2013-09-26 | 2015-03-26 | Lam Research Corporation | High aspect ratio etch with combination mask |
US20150086316A1 (en) | 2013-09-26 | 2015-03-26 | Applied Materials, Inc. | Pneumatic end effector apparatus, substrate transportation systems, and methods for transporting substrates |
US20150086716A1 (en) | 2013-09-26 | 2015-03-26 | Veeco Ald Inc. | Printing of colored pattern using atomic layer deposition |
US20150087139A1 (en) | 2013-09-20 | 2015-03-26 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US8991214B2 (en) | 2009-07-30 | 2015-03-31 | Techno Quartz Inc. | Method of refurbishing a quartz glass component |
US8991887B2 (en) | 2013-07-08 | 2015-03-31 | Kabushiki Kaisha Yaskawa Denki | Suction structure, robot hand and robot |
US8993457B1 (en) | 2014-02-06 | 2015-03-31 | Cypress Semiconductor Corporation | Method of fabricating a charge-trapping gate stack using a CMOS process flow |
US20150091057A1 (en) | 2013-09-27 | 2015-04-02 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US20150094470A1 (en) | 2013-09-27 | 2015-04-02 | Antonio Sanchez | Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling |
US20150091134A1 (en) | 2012-04-05 | 2015-04-02 | Dyson Technology Limited | Atomic layer deposition |
USD726365S1 (en) | 2013-05-29 | 2015-04-07 | Sis Resources Ltd. | Mouthpiece plug for electronic cigarette |
CN104498895A (en) | 2014-12-23 | 2015-04-08 | 国家纳米科学中心 | Ultrathin silicon oxynitride film material and preparation method and application thereof |
US20150099123A1 (en) | 2011-11-17 | 2015-04-09 | United Protective Technologies | Carbon based coatings and methods of producing the same |
US20150099065A1 (en) | 2012-06-07 | 2015-04-09 | Soitec | Gas injection components for deposition systems, deposition systems including such components, and related methods |
US20150099342A1 (en) | 2013-10-04 | 2015-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of Forming a Trench Structure |
US20150099375A1 (en) | 2013-10-03 | 2015-04-09 | Air Products And Chemicals, Inc. | Methods for Depositing Silicon Nitride Films |
US20150099072A1 (en) | 2013-10-09 | 2015-04-09 | Asm Ip Holding B.V. | Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT |
US20150099374A1 (en) | 2013-10-07 | 2015-04-09 | Tokyo Electron Limited | Method and Apparatus of Forming Silicon Nitride Film |
US9004744B1 (en) | 2009-03-30 | 2015-04-14 | Techni-Blend, Inc. | Fluid mixer using countercurrent injection |
USD726884S1 (en) | 2014-02-04 | 2015-04-14 | Asm Ip Holding B.V. | Heater block |
CN104517892A (en) | 2013-09-30 | 2015-04-15 | 朗姆研究公司 | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US20150104574A1 (en) | 2013-10-15 | 2015-04-16 | Veeco Ald Inc. | Fast atomic layer deposition process using seed precursor |
US20150104575A1 (en) | 2013-10-16 | 2015-04-16 | The Board Of Trustees Of The University Of Illinois | Multi-metal films, alternating film multilayers, formation methods and deposition system |
US20150102466A1 (en) | 2013-10-16 | 2015-04-16 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor-on-insulator structure and method of fabricating the same |
US20150111395A1 (en) | 2013-10-21 | 2015-04-23 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20150111374A1 (en) | 2013-10-18 | 2015-04-23 | International Business Machines Corporation | Surface treatment in a dep-etch-dep process |
US20150110968A1 (en) | 2013-10-22 | 2015-04-23 | Lam Research Corporation | Tandem source activation for cyclical deposition of films |
US20150110147A1 (en) | 2013-02-04 | 2015-04-23 | Yoshiro Mizuno | Thermometer Management System |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9018093B2 (en) | 2013-01-25 | 2015-04-28 | Asm Ip Holding B.V. | Method for forming layer constituted by repeated stacked layers |
US9017933B2 (en) | 2010-03-29 | 2015-04-28 | Tokyo Electron Limited | Method for integrating low-k dielectrics |
US20150114295A1 (en) | 2013-10-29 | 2015-04-30 | Asm Ip Holding B.V. | Deposition apparatus |
US20150118846A1 (en) | 2013-10-28 | 2015-04-30 | Asm Ip Holding B.V. | Method For Trimming Carbon-Containing Film At Reduced Trimming Rate |
US20150118863A1 (en) | 2013-10-25 | 2015-04-30 | Lam Research Corporation | Methods and apparatus for forming flowable dielectric films having low porosity |
US20150118009A1 (en) | 2012-12-03 | 2015-04-30 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Graphite Wafer Carrier for LED Epitaxial Wafer Processes |
US9023738B2 (en) | 2011-12-27 | 2015-05-05 | Tokyo Electron Limited | Film deposition method |
US20150122180A1 (en) | 2013-11-07 | 2015-05-07 | Samsung Display Co., Ltd. | Substrate transfer apparatus and thin film deposition apparatus having the same |
US20150125628A1 (en) | 2013-11-06 | 2015-05-07 | Asm Ip Holding B.V. | Method of depositing thin film |
US20150126036A1 (en) | 2013-11-05 | 2015-05-07 | Tokyo Electron Limited | Controlling etch rate drift and particles during plasma processing |
US9029244B2 (en) | 2005-01-19 | 2015-05-12 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
US9029272B1 (en) | 2013-10-31 | 2015-05-12 | Asm Ip Holding B.V. | Method for treating SiOCH film with hydrogen plasma |
US20150132953A1 (en) | 2013-11-13 | 2015-05-14 | Intermolecular Inc. | Etching of semiconductor structures that include titanium-based layers |
US20150132212A1 (en) | 2013-11-13 | 2015-05-14 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures and devices including a conformal carbon film, and system of forming same |
CN104630735A (en) | 2013-11-06 | 2015-05-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Temperature monitoring device and plasma processing apparatus |
US20150137315A1 (en) | 2013-09-20 | 2015-05-21 | Intermolecular, Inc. | DRAM MIM Capacitor Using Non-Noble Electrodes |
US20150147483A1 (en) | 2013-11-26 | 2015-05-28 | Asm Ip Holding B.V. | Method for Forming Conformal Nitrided, Oxidized, or Carbonized Dielectric Film by Atomic Layer Deposition |
US20150147482A1 (en) | 2013-11-25 | 2015-05-28 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ald films |
US20150147488A1 (en) | 2013-11-26 | 2015-05-28 | SK Hynix Inc. | Plasma enhanced vapor phase deposition |
US20150144060A1 (en) | 2013-11-25 | 2015-05-28 | Terasemicon Corporation | Cluster-batch type system for processing substrate |
US20150152547A1 (en) | 2012-08-17 | 2015-06-04 | Ihi Corporation | Method and apparatus for manufacturing heat-resistant composite material |
US20150155177A1 (en) | 2013-12-02 | 2015-06-04 | Applied Materials, Inc. | Procedure for etch rate consistency |
US20150152553A1 (en) | 2012-06-19 | 2015-06-04 | Osram Oled Gmbh | ALD Coating System |
US20150155140A1 (en) | 2013-12-04 | 2015-06-04 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the same |
US20150155370A1 (en) | 2010-04-28 | 2015-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US20150162185A1 (en) | 2013-12-11 | 2015-06-11 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
US20150162214A1 (en) | 2013-12-09 | 2015-06-11 | Applied Materials, Inc. | Methods Of Selective Layer Deposition |
US20150162168A1 (en) | 2013-12-06 | 2015-06-11 | University Of Maryland, College Park | Reactor for plasma-based atomic layer etching of materials |
USD732145S1 (en) | 2014-02-04 | 2015-06-16 | Asm Ip Holding B.V. | Shower plate |
US9057388B2 (en) | 2012-03-21 | 2015-06-16 | International Business Machines Corporation | Vacuum trap |
US20150167165A1 (en) | 2012-06-15 | 2015-06-18 | Picosun Oy | Coating a substrate web by atomic layer deposition |
US20150171177A1 (en) | 2013-12-18 | 2015-06-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure with metal gate and manufacuring method thereof |
US20150167161A1 (en) | 2012-06-07 | 2015-06-18 | Soitec | Gas injection components for deposition systems and related methods |
US20150170954A1 (en) | 2013-12-17 | 2015-06-18 | Applied Materials, Inc. | Substrate support apparatus having reduced substrate particle generation |
US20150170914A1 (en) | 2013-12-18 | 2015-06-18 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US20150170947A1 (en) | 2012-04-26 | 2015-06-18 | Intevac, Inc. | System and method for bi-facial processing of substrates |
US20150170975A1 (en) | 2013-12-17 | 2015-06-18 | Texas Instruments Incorporated | Elongated contacts using litho-freeze-litho-etch process |
US20150170945A1 (en) | 2013-12-13 | 2015-06-18 | Sinfonia Technology Co., Ltd. | Efem |
US20150167162A1 (en) | 2012-07-13 | 2015-06-18 | Gallium Enterprises Pty Ltd | Apparatus and method for film formation |
US20150170907A1 (en) | 2013-12-18 | 2015-06-18 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US20150167705A1 (en) | 2013-12-17 | 2015-06-18 | Samsung Electronics Co., Ltd. | Substrate treating apparatus and blocker plate assembly |
JP2015115461A (en) | 2013-12-11 | 2015-06-22 | 大日本印刷株式会社 | Defect correction method of microstructure and manufacturing method |
USD732644S1 (en) | 2014-02-04 | 2015-06-23 | Asm Ip Holding B.V. | Top plate |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20150176124A1 (en) | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD |
US20150179640A1 (en) | 2013-12-19 | 2015-06-25 | Globalfoundries Inc. | Common fabrication of different semiconductor devices with different threshold voltages |
US20150176126A1 (en) | 2013-12-20 | 2015-06-25 | Applied Materials, Inc. | Dual-Direction Chemical Delivery System for ALD/CVD Chambers |
US20150179501A1 (en) | 2013-12-24 | 2015-06-25 | Ritesh Jhaveri | Techniques for trench isolation using flowable dielectric materials |
US20150179564A1 (en) | 2013-12-20 | 2015-06-25 | SK Hynix Inc. | Semiconductor device and method of manufacturing the same |
US20150175467A1 (en) | 2013-12-23 | 2015-06-25 | Infineon Technologies Austria Ag | Mold, method for producing a mold, and method for forming a mold article |
US20150179415A1 (en) | 2013-12-19 | 2015-06-25 | Tokyo Electron Limited | Substrate processing apparatus |
US20150174768A1 (en) | 2013-12-23 | 2015-06-25 | Lam Research Corporation | Microstructures for improved wafer handling |
USD733257S1 (en) | 2014-02-14 | 2015-06-30 | Hansgrohe Se | Overhead shower |
USD733262S1 (en) | 2014-05-22 | 2015-06-30 | Young Boung Kang | Disposer of connection member for kitchen sink bowl |
US20150184287A1 (en) | 2013-12-26 | 2015-07-02 | Intermolecular, Inc. | Systems and Methods for Parallel Combinatorial Vapor Deposition Processing |
US20150187908A1 (en) | 2013-12-30 | 2015-07-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for fabricating semiconductor device |
US20150187559A1 (en) | 2013-12-27 | 2015-07-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20150187611A1 (en) | 2013-12-27 | 2015-07-02 | Hitachi Kokusai Electric Inc. | Substrate processing system, method of manufacturing semiconductor device and non-transitory computer-readable recording medium |
US9076726B2 (en) | 2012-12-31 | 2015-07-07 | Imec | Method for tuning the effective work function of a gate structure in a semiconductor device |
US9076635B2 (en) | 2011-04-29 | 2015-07-07 | Von Ardenne Anlagentechnik Gmbh | Substrate treatment installation |
KR101535573B1 (en) | 2014-11-04 | 2015-07-13 | 연세대학교 산학협력단 | Method for synthesis of transition metal chalcogenide |
USD734377S1 (en) | 2013-03-28 | 2015-07-14 | Hirata Corporation | Top cover of a load lock chamber |
US20150203967A1 (en) | 2014-01-17 | 2015-07-23 | Lam Research Corporation | Method and apparatus for the reduction of defectivity in vapor deposited films |
US20150203961A1 (en) | 2014-01-21 | 2015-07-23 | Applied Materials, Inc. | Methods for forming a cobalt-ruthenium liner layer for interconnect structures |
WO2015107009A1 (en) | 2014-01-17 | 2015-07-23 | Koninklijke Philips N.V. | Heating system comprising semiconductor light sources |
WO2015112728A1 (en) | 2014-01-23 | 2015-07-30 | Ultratech, Inc. | Vapor delivery system |
US20150211125A1 (en) | 2014-01-28 | 2015-07-30 | Tokyo Electron Limited | Plasma processing apparatus |
US20150211124A1 (en) | 2012-07-25 | 2015-07-30 | Tokyo Electron Limited | Film forming apparatus |
US9099423B2 (en) | 2013-07-12 | 2015-08-04 | Asm Ip Holding B.V. | Doped semiconductor films and processing |
US9099505B2 (en) | 2009-09-26 | 2015-08-04 | Tokyo Electron Limited | Thermal processing apparatus and cooling method |
US20150221480A1 (en) | 2014-01-31 | 2015-08-06 | Applied Materials, Inc. | Chamber coatings |
US20150218695A1 (en) | 2012-12-18 | 2015-08-06 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
US20150217330A1 (en) | 2014-02-04 | 2015-08-06 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
US20150217456A1 (en) | 2014-02-04 | 2015-08-06 | Asm Ip Holding B.V. | Anti-slip end-effector for transporting workpiece |
US20150218700A1 (en) | 2013-03-08 | 2015-08-06 | Applied Materials, Inc. | Chamber component with protective coating suitable for protection against flourine plasma |
US20150221519A1 (en) | 2014-01-31 | 2015-08-06 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
US20150221479A1 (en) | 2014-01-31 | 2015-08-06 | Applied Materials, Inc. | Rps assisted rf plasma source for semiconductor processing |
US20150218698A1 (en) | 2014-02-06 | 2015-08-06 | Veeco Ald Inc. | Spatial deposition of material using short-distance reciprocating motions |
USD736348S1 (en) | 2014-07-07 | 2015-08-11 | Jiangmen Triumph Rain Showers Co., LTD | Spray head for a shower |
US20150225850A1 (en) | 2014-02-07 | 2015-08-13 | HGST Netherlands B.V. | Method for line density multiplication using block copolymers and sequential infiltration synthesis |
US20150228645A1 (en) | 2014-02-12 | 2015-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing |
US20150228513A1 (en) | 2014-02-07 | 2015-08-13 | Applied Materials, Inc. | Pixilated temperature controlled substrate support assembly |
US20150228572A1 (en) | 2014-02-10 | 2015-08-13 | International Business Machines Corporation | Nanoscale interconnect structure |
US20150228749A1 (en) | 2013-08-05 | 2015-08-13 | International Business Machines Corporation | Enabling enhanced reliability and mobility for replacement gate planar and finfet structures |
TW201531587A (en) | 2013-12-30 | 2015-08-16 | Lam Res Corp | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US9111972B2 (en) | 2004-07-13 | 2015-08-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and manufacturing method for a semiconductor device |
US20150240359A1 (en) | 2014-02-25 | 2015-08-27 | Asm Ip Holding B.V. | Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same |
US20150243545A1 (en) | 2014-02-26 | 2015-08-27 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
US20150240360A1 (en) | 2014-02-24 | 2015-08-27 | Lam Research Corporation | Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations |
US20150243542A1 (en) | 2014-02-27 | 2015-08-27 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20150240357A1 (en) | 2014-02-25 | 2015-08-27 | Tokyo Electron Limited | Substrate processing apparatus using rotatable table |
US20150243522A1 (en) | 2014-02-24 | 2015-08-27 | Tokyo Electron Limited | Etching method |
US20150243658A1 (en) | 2014-02-25 | 2015-08-27 | Globalfoundries Inc. | Integrated circuits with varying gate structures and fabrication methods |
US20150241787A1 (en) | 2014-02-26 | 2015-08-27 | Tokyo Electron Limited | Substrate processing method, program, computer-readable storage medium, and substrate processing system |
US20150243563A1 (en) | 2014-02-25 | 2015-08-27 | Globalfoundries Inc. | Integrated circuit having multiple threshold voltages |
US9123510B2 (en) | 2013-06-12 | 2015-09-01 | ASM IP Holding, B.V. | Method for controlling in-plane uniformity of substrate processed by plasma-assisted process |
US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
US20150249013A1 (en) | 2010-04-15 | 2015-09-03 | Lam Research Corporation | Capped ald films for doping fin-shaped channel regions of 3-d ic transistors |
US20150247259A1 (en) | 2011-02-23 | 2015-09-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
WO2015127614A1 (en) | 2014-02-27 | 2015-09-03 | 深圳市祥涛瑞杰贸易有限公司 | Air purification structure and air purification system |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
CN204629865U (en) | 2015-02-03 | 2015-09-09 | 宁波永茂电器厂 | Two unit mobile type cold blast engine |
US20150255324A1 (en) | 2014-03-06 | 2015-09-10 | Applied Materials, Inc. | Seamless gap-fill with spatial atomic layer deposition |
US20150255385A1 (en) | 2014-03-06 | 2015-09-10 | SK Hynix Inc. | Semiconductor device and method of fabricating the same |
US20150255319A1 (en) | 2014-03-04 | 2015-09-10 | Tokyo Electron Limited | Conveying method and substrate processing apparatus |
US9136108B2 (en) | 2013-09-04 | 2015-09-15 | Asm Ip Holding B.V. | Method for restoring porous surface of dielectric layer by UV light-assisted ALD |
US20150259790A1 (en) | 2010-08-11 | 2015-09-17 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
US20150262828A1 (en) | 2014-03-14 | 2015-09-17 | Applied Materials, Inc. | MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD) |
US20150263033A1 (en) | 2014-03-12 | 2015-09-17 | Kabushiki Kaisha Toshiba | Semiconductor Device and Manufacturing Method Thereof |
US20150259801A1 (en) | 2010-04-30 | 2015-09-17 | Tokyo Electron Limited | Method for forming carbon nanotubes and carbon nanotube film forming apparatus |
US9142764B1 (en) | 2014-12-08 | 2015-09-22 | Intermolecular, Inc. | Methods of forming embedded resistors for resistive random access memory cells |
USD739222S1 (en) | 2013-11-13 | 2015-09-22 | Jeff Chadbourne | Two-piece magnetic clamp |
US9142393B2 (en) | 2013-05-23 | 2015-09-22 | Asm Ip Holding B.V. | Method for cleaning reaction chamber using pre-cleaning process |
US20150267298A1 (en) | 2014-03-18 | 2015-09-24 | Tokyo Electron Limited | Film forming apparatus |
US20150270146A1 (en) | 2014-03-19 | 2015-09-24 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20150270140A1 (en) | 2014-06-09 | 2015-09-24 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
US20150267301A1 (en) | 2014-03-19 | 2015-09-24 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US20150267294A1 (en) | 2014-03-20 | 2015-09-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method for manufacturing semiconductor device and computer-readable recording medium |
US20150267299A1 (en) | 2014-03-18 | 2015-09-24 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US20150267295A1 (en) | 2014-03-19 | 2015-09-24 | Asm Ip Holding B.V. | Removable substrate tray and assembly and reactor including same |
US20150267297A1 (en) | 2014-03-18 | 2015-09-24 | Asm Ip Holding B.V. | Method for Performing Uniform Processing in Gas System-Sharing Multiple Reaction Chambers |
US20150275355A1 (en) | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
US20150279681A1 (en) | 2014-03-31 | 2015-10-01 | Asm Ip Holding B.V. | Plasma atomic layer deposition |
US20150279708A1 (en) | 2014-03-25 | 2015-10-01 | SCREEN Holdings Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US20150279682A1 (en) | 2014-03-31 | 2015-10-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
US20150275357A1 (en) | 2014-03-26 | 2015-10-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20150280051A1 (en) | 2014-04-01 | 2015-10-01 | Tsmc Solar Ltd. | Diffuser head apparatus and method of gas distribution |
US20150279665A1 (en) | 2014-03-26 | 2015-10-01 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
US20150287612A1 (en) | 2014-04-07 | 2015-10-08 | Applied Materials, Inc. | Spacer formation |
US20150287591A1 (en) | 2013-10-16 | 2015-10-08 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US20150287710A1 (en) | 2014-04-08 | 2015-10-08 | Tae-Hwan YUN | Semiconductor devices having conductive pads and methods of fabricating the same |
US20150287626A1 (en) | 2014-04-03 | 2015-10-08 | Asm Ip Holding B.V. | Anti-Slip End Effector For Transporting Workpiece Using Van Der Waals Force |
US20150284848A1 (en) | 2014-04-07 | 2015-10-08 | Asm Ip Holding B.V. | Method for Stabilizing Reaction Chamber Pressure |
US20150292088A1 (en) | 2012-11-27 | 2015-10-15 | Claudio Canizares | Deposition systems having interchangeable gas injectors and related methods |
US20150291830A1 (en) | 2012-11-16 | 2015-10-15 | Liquipel Ip Llc | Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings |
US9166012B2 (en) | 2012-12-04 | 2015-10-20 | Samsung Electronics Co., Ltd. | Semiconductor memory devices including an air gap and methods of fabricating the same |
US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
US20150303056A1 (en) | 2012-06-12 | 2015-10-22 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US20150299848A1 (en) | 2014-04-16 | 2015-10-22 | Asm Ip Holding B.V. | Dual selective deposition |
US9171714B2 (en) | 2012-09-07 | 2015-10-27 | Applied Materials, Inc. | Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation |
US20150308586A1 (en) | 2014-04-24 | 2015-10-29 | Asm Ip Holding B.V. | Lockout tagout for semiconductor vacuum valve |
US20150311043A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Chamber component with fluorinated thin film coating |
US20150307989A1 (en) | 2012-03-23 | 2015-10-29 | Picosun Oy | Atomic layer deposition method and apparatuses |
US20150311151A1 (en) | 2014-04-28 | 2015-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure Having Air Gap and Method of Forming the Same |
US20150307982A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
USD742202S1 (en) | 2014-09-11 | 2015-11-03 | Thomas Jason Cyphers | Sign frame key |
US20150315704A1 (en) | 2014-05-02 | 2015-11-05 | Asm Ip Holding B.V. | Low-Oxidation Plasma-Assisted Process |
US9184054B1 (en) | 2014-04-25 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
TWM512254U (en) | 2015-07-02 | 2015-11-11 | Jjs Comm Co Ltd | Insulation pad structure for coaxial cable adapting head |
US20150325432A1 (en) | 2014-05-07 | 2015-11-12 | Tokyo Electron Limited | Film forming method, film forming apparatus and recording medium |
US9190264B2 (en) | 2011-09-30 | 2015-11-17 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of processing substrate and non-transitory computer readable recording medium |
USD743357S1 (en) | 2013-03-01 | 2015-11-17 | Asm Ip Holding B.V. | Susceptor |
USD743513S1 (en) | 2014-06-13 | 2015-11-17 | Asm Ip Holding B.V. | Seal ring |
US20150332921A1 (en) | 2014-05-14 | 2015-11-19 | National Tsing Hua University | Carrier channel with element concentration gradient distribution and fabrication method thereof |
US20150340247A1 (en) | 2014-05-21 | 2015-11-26 | Sony Corporation | Method for forming a metal cap in a semiconductor memory device |
US20150340609A1 (en) | 2012-06-22 | 2015-11-26 | Nec Corporation | Switching element and method for manufacturing switching element |
US20150340500A1 (en) | 2014-05-20 | 2015-11-26 | Globalfoundries Inc. | Semiconductor structure with self-aligned wells and multiple channel materials |
US20150340266A1 (en) | 2014-05-21 | 2015-11-26 | Applied Materials, Inc. | Thermal processing susceptor |
US20150345022A1 (en) | 2013-02-21 | 2015-12-03 | Joseph Yudovsky | Apparatus And Methods For Injector To Substrate Gap Control |
US20150348755A1 (en) | 2014-05-29 | 2015-12-03 | Charm Engineering Co., Ltd. | Gas distribution apparatus and substrate processing apparatus including same |
US20150349073A1 (en) | 2014-05-29 | 2015-12-03 | SK Hynix Inc. | Dual work function buried gate-type transistor, method for forming the same, and electronic device including the same |
US20150343741A1 (en) | 2014-05-27 | 2015-12-03 | Panasonic Intellectual Property Management Co., Ltd. | Gas barrier film, film substrate provided with gas barrier film, and electronic device including the film substrate |
US20150343559A1 (en) | 2014-06-02 | 2015-12-03 | Disco Corporation | Chip manufacturing method |
US20150345018A1 (en) | 2013-01-16 | 2015-12-03 | Universiteit Gent | Methods for Obtaining Hydrophilic Fluoropolymers |
US20150354060A1 (en) | 2014-06-04 | 2015-12-10 | Tokyo Electron Limited | Film formation apparatus, film formation method, and storage medium |
US20150353478A1 (en) | 2012-12-27 | 2015-12-10 | Sumitomo Chemical Company, Limited | Method for producing oxime |
US9214340B2 (en) | 2014-02-05 | 2015-12-15 | Applied Materials, Inc. | Apparatus and method of forming an indium gallium zinc oxide layer |
US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
USD745641S1 (en) | 2011-06-20 | 2015-12-15 | Neoperl Gmbh | Stream straightener for faucet |
US20150361550A1 (en) | 2014-06-16 | 2015-12-17 | Tokyo Electron Limited | Film formation apparatus, film formation method, and storage medium |
US20150364747A1 (en) | 2014-05-13 | 2015-12-17 | Uchicago Argonne, Llc | Materials for solid state electrolytes and protective electrode coatings for lithium batteries |
US20150361553A1 (en) | 2013-04-07 | 2015-12-17 | Shigemi Murakawa | Rotating semi-batch ald device |
US20150364347A1 (en) | 2014-06-13 | 2015-12-17 | Applied Materials, Inc. | Direct lift process apparatus |
US20150364371A1 (en) | 2014-06-12 | 2015-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned interconnect with protection layer |
US9219006B2 (en) | 2014-01-13 | 2015-12-22 | Applied Materials, Inc. | Flowable carbon film by FCVD hardware using remote plasma PECVD |
US20150372056A1 (en) | 2014-06-18 | 2015-12-24 | Dong-Jun Seong | Semiconductor diodes, and variable resistance memory devices |
US20150371864A1 (en) | 2014-06-19 | 2015-12-24 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US20150368798A1 (en) | 2013-02-18 | 2015-12-24 | Garry K. Kwong | Apparatus And Process Containment For Spatially Separated Atomic Layer Deposition |
US20150367253A1 (en) | 2014-06-24 | 2015-12-24 | Us Synthetic Corporation | Photoluminescent thin-layer chromatography plate and methods for making same |
US9223203B2 (en) | 2011-07-08 | 2015-12-29 | Asm International N.V. | Microcontact printed films as an activation layer for selective atomic layer deposition |
US20150376211A1 (en) | 2015-03-30 | 2015-12-31 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME |
US20150380296A1 (en) | 2014-06-25 | 2015-12-31 | Lam Research Corporation | Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications |
US20150376785A1 (en) | 2013-02-07 | 2015-12-31 | Nederlandse Organisatie Voor Toegepast- natuurwetenschappeliijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
US20160002776A1 (en) | 2013-02-21 | 2016-01-07 | Altatech Semiconductor | Chemical vapor deposition device |
US20160005596A1 (en) | 2013-03-15 | 2016-01-07 | Applied Materials, Inc. | Ultra-conformal carbon film deposition layer-by-layer deposition of carbon-doped oxide films |
US20160002786A1 (en) | 2013-03-15 | 2016-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et I'Exploitation des Procédés Georges Claude | Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films |
US20160005595A1 (en) | 2013-03-12 | 2016-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and Method of Manufacture |
US20160005571A1 (en) | 2014-07-03 | 2016-01-07 | Applied Materials, Inc. | Showerhead having a detachable high resistivity gas distribution plate |
US20160005839A1 (en) | 2014-07-03 | 2016-01-07 | Applied Materials, Inc. | Method and apparatus for selective deposition |
US20160013022A1 (en) | 2013-03-15 | 2016-01-14 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber |
US20160013086A1 (en) | 2013-04-08 | 2016-01-14 | Eugene Technology Co., Ltd. | Substrate processing device |
US20160010208A1 (en) | 2014-07-10 | 2016-01-14 | Applied Materials, Inc. | Design of susceptor in chemical vapor deposition reactor |
CN105253917A (en) | 2015-10-28 | 2016-01-20 | 昆明理工大学 | Method for preparing precursor for chemical vapor deposition of metallic rhenium |
US20160017493A1 (en) | 2014-07-15 | 2016-01-21 | Lam Research Corporation | Systems and methods for improving deposition rate uniformity and reducing defects in substrate peocessing systems |
US20160020071A1 (en) | 2014-07-21 | 2016-01-21 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
US20160020092A1 (en) | 2010-09-23 | 2016-01-21 | Lam Research Corporation | Methods for depositing silicon oxide |
US20160024656A1 (en) | 2014-07-28 | 2016-01-28 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US20160024655A1 (en) | 2013-03-15 | 2016-01-28 | Joseph Yudovsky | Atmospheric Lid With Rigid Plate For Carousel Processing Chambers |
US9252024B2 (en) | 2013-05-17 | 2016-02-02 | Applied Materials, Inc. | Deposition chambers with UV treatment and methods of use |
US9252238B1 (en) | 2014-08-18 | 2016-02-02 | Lam Research Corporation | Semiconductor structures with coplanar recessed gate layers and fabrication methods |
US20160035566A1 (en) | 2014-07-30 | 2016-02-04 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ald system |
US20160032453A1 (en) | 2014-08-01 | 2016-02-04 | Lam Research Corporation | Systems and methods for vapor delivery |
US20160035596A1 (en) | 2014-08-01 | 2016-02-04 | Asm Ip Holding B.V. | Apparatus And Method For Transporting Wafers Between Wafer Carrier And Process Tool Under Vacuum |
US20160035542A1 (en) | 2014-07-30 | 2016-02-04 | Lam Research Corporation | Method of conditioning vacuum chamber of semiconductor substrate processing apparatus |
US20160042954A1 (en) | 2014-08-06 | 2016-02-11 | Globalfoundries Inc. | Replacement metal gate and fabrication process with reduced lithography steps |
WO2016019795A1 (en) | 2014-08-08 | 2016-02-11 | 珠海格力电器股份有限公司 | Air conditioner indoor unit and air conditioner |
US20160056074A1 (en) | 2014-08-21 | 2016-02-25 | Lam Research Corporation | Method for void-free cobalt gap fill |
US20160056156A1 (en) | 2013-06-20 | 2016-02-25 | Intel Corporation | Non-planar semiconductor device having doped sub-fin region and method to fabricate same |
US20160051964A1 (en) | 2014-08-21 | 2016-02-25 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9275834B1 (en) | 2015-02-20 | 2016-03-01 | Applied Materials, Inc. | Selective titanium nitride etch |
US20160064208A1 (en) | 2014-08-27 | 2016-03-03 | Ultratech, Inc. | Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation |
US20160060752A1 (en) | 2013-04-19 | 2016-03-03 | Herakles | Method for producing a composite material with a carbide matrix |
US20160064231A1 (en) | 2014-08-29 | 2016-03-03 | Applied Materials, Inc. | Fast atomic layer etch process using an electron beam |
US9281277B2 (en) | 2013-12-23 | 2016-03-08 | Samsung Electronics Co., Ltd. | Methods of forming wiring structures |
USD751176S1 (en) | 2014-08-07 | 2016-03-08 | Hansgrohe Se | Overhead shower |
US9281223B2 (en) | 2010-06-08 | 2016-03-08 | National Institute Of Advanced Industrial Science And Technology | Coupling system |
US20160069613A1 (en) | 2014-09-08 | 2016-03-10 | Tokyo Electron Limited | High capacity magnetic annealing system and method of operating |
US20160071750A1 (en) | 2014-09-09 | 2016-03-10 | Asm Ip Holding B.V. | Assembly of liner and flange for vertical furnace as well as a vertical process furnace |
US9287273B2 (en) | 2014-06-06 | 2016-03-15 | Imec Vzw | Method for manufacturing a semiconductor device comprising transistors each having a different effective work function |
US20160079054A1 (en) | 2014-09-17 | 2016-03-17 | Asm Ip Holding B.V. | Deposition of SiN |
US20160076949A1 (en) | 2013-05-30 | 2016-03-17 | Knowles Capital Formation Inc. | Wireless culinary probe calibration method and system |
US20160086811A1 (en) | 2013-06-26 | 2016-03-24 | Beijing Sevenstar Electronics Co., Ltd. | Vertical no-spin process chamber |
US20160085003A1 (en) | 2012-01-19 | 2016-03-24 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
US20160087028A1 (en) | 2013-05-21 | 2016-03-24 | Toshiyuki Hirota | Semiconductor device and method for manufacturing same |
US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
TW201613231A (en) | 2014-09-16 | 2016-04-01 | Huaquan Energy | Geometry and insulation components of motor mechanism |
USD753269S1 (en) | 2015-01-09 | 2016-04-05 | Asm Ip Holding B.V. | Top plate |
US9305836B1 (en) | 2014-11-10 | 2016-04-05 | International Business Machines Corporation | Air gap semiconductor structure with selective cap bilayer |
US20160099250A1 (en) | 2014-10-03 | 2016-04-07 | Sandisk Technologies Inc. | Three dimensional nand device with silicon germanium heterostructure channel |
US20160097123A1 (en) | 2014-10-07 | 2016-04-07 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US20160099166A1 (en) | 2014-10-03 | 2016-04-07 | Applied Materials, Inc. | Spring-Loaded Pins For Susceptor Assembly and Processing Methods Using Same |
US20160099150A1 (en) | 2014-10-03 | 2016-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods of forming finfets |
US9309978B2 (en) | 2013-03-14 | 2016-04-12 | Dresser-Rand Company | Low head to stem ratio poppet valve |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
USD753629S1 (en) | 2014-06-19 | 2016-04-12 | Yamaha Corporation | Speaker |
US20160102214A1 (en) | 2014-10-13 | 2016-04-14 | Heraeus Deutschland GmbH & Co. KG | Copper coloured paint, a process for making it and its application |
US9315897B2 (en) | 2009-06-01 | 2016-04-19 | Korea Institute Of Industrial Technology | Showerhead for film depositing vacuum equipment |
US20160111272A1 (en) | 2015-12-28 | 2016-04-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
US20160111304A1 (en) | 2014-10-20 | 2016-04-21 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
US20160111438A1 (en) | 2014-10-20 | 2016-04-21 | SanDisk Technologies, Inc. | Batch contacts for multiple electrically conductive layers |
US9324846B1 (en) | 2015-01-08 | 2016-04-26 | Globalfoundries Inc. | Field plate in heterojunction bipolar transistor with improved break-down voltage |
US20160118224A1 (en) | 2014-10-27 | 2016-04-28 | Tokyo Electron Limited | Plasma processing apparatus |
US9331200B1 (en) | 2014-12-19 | 2016-05-03 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US9337057B2 (en) | 2014-07-21 | 2016-05-10 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US9337054B2 (en) | 2007-06-28 | 2016-05-10 | Entegris, Inc. | Precursors for silicon dioxide gap fill |
US9337031B2 (en) | 2014-01-28 | 2016-05-10 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
US20160133307A1 (en) | 2014-11-10 | 2016-05-12 | JoonMyoung LEE | Magnetic memory device and method of manufacturing the same |
US20160133504A1 (en) | 2014-11-12 | 2016-05-12 | Applied Materials, Inc. | Susceptor design to reduce edge thermal peak |
US9343297B1 (en) | 2015-04-22 | 2016-05-17 | Asm Ip Holding B.V. | Method for forming multi-element thin film constituted by at least five elements by PEALD |
US9343343B2 (en) | 2014-05-19 | 2016-05-17 | Asm Ip Holding B.V. | Method for reducing particle generation at bevel portion of substrate |
US20160141172A1 (en) | 2014-11-19 | 2016-05-19 | Asm Ip Holding B.V. | Method for depositing thin film |
US9349620B2 (en) | 2014-07-09 | 2016-05-24 | Asm Ip Holdings B.V. | Apparatus and method for pre-baking substrate upstream of process chamber |
USD756929S1 (en) | 2013-09-30 | 2016-05-24 | Danfoss A/S | Electrical connector for refrigeration valve |
US20160145738A1 (en) | 2014-11-21 | 2016-05-26 | Applied Materials, Inc. | Alcohol Assisted ALD Film Deposition |
US20160148800A1 (en) | 2014-11-24 | 2016-05-26 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US20160148806A1 (en) | 2014-11-24 | 2016-05-26 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
US20160148821A1 (en) | 2014-11-26 | 2016-05-26 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20160148801A1 (en) | 2014-11-25 | 2016-05-26 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
US20160148811A1 (en) | 2014-11-25 | 2016-05-26 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus |
JP2016098406A (en) | 2014-11-21 | 2016-05-30 | 東京エレクトロン株式会社 | Film deposition method of molybdenum film |
US9355882B2 (en) | 2013-12-04 | 2016-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transfer module for bowed wafers |
US9355876B2 (en) | 2013-03-15 | 2016-05-31 | Applied Materials, Inc. | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations |
US20160152649A1 (en) | 2013-07-26 | 2016-06-02 | President And Fellows Of Harvard College | Metal amides of cyclic amines |
US20160153088A1 (en) | 2014-12-02 | 2016-06-02 | Asm Ip Holding B.V. | Film forming apparatus |
US20160155629A1 (en) | 2013-07-02 | 2016-06-02 | Ultratech, Inc. | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations |
US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
US9362137B2 (en) | 2014-08-18 | 2016-06-07 | Samsung Electronics Co., Ltd. | Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device |
US20160163711A1 (en) | 2014-12-04 | 2016-06-09 | International Business Machines Corporation | Wet bottling process for small diameter deep trench capacitors |
US20160163558A1 (en) | 2014-12-04 | 2016-06-09 | Lam Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
US20160163556A1 (en) | 2014-12-04 | 2016-06-09 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US20160163972A1 (en) | 2010-04-15 | 2016-06-09 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
US20160163561A1 (en) | 2014-12-04 | 2016-06-09 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
USD759193S1 (en) | 2015-04-01 | 2016-06-14 | Cummins Emission Solutions, Inc. | Water deflector |
USD759137S1 (en) | 2014-10-14 | 2016-06-14 | Victor Equipment Company | Consumables adapter for a welding torch |
US20160169766A1 (en) | 2014-12-11 | 2016-06-16 | Tokyo Electron Limited | Leakage determining method, substrate processing apparatus and storage medium |
US20160168704A1 (en) | 2014-12-10 | 2016-06-16 | Ji-Hoon Choi | Gas injectors |
US20160172296A1 (en) | 2014-12-10 | 2016-06-16 | Tae-Wan Lim | Semiconductor device and method for manufacturing the same |
US20160172189A1 (en) | 2014-12-15 | 2016-06-16 | Tokyo Electron Limited | Method of selective gas phase film deposition on a substrate |
US20160168699A1 (en) | 2014-12-12 | 2016-06-16 | Asm Ip Holding B.V. | Method for depositing metal-containing film using particle-reduction step |
US20160177448A1 (en) | 2014-12-18 | 2016-06-23 | Tokyo Electron Limited | Plasma processing apparatus |
US20160175805A1 (en) | 2013-08-02 | 2016-06-23 | Johnson Matthey Public Limited Company | Getter composition |
US20160181117A1 (en) | 2014-12-22 | 2016-06-23 | Lam Research Corporation | Integrated etch/clean for dielectric etch applications |
US20160190137A1 (en) | 2014-12-26 | 2016-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Finfet structure and method for manufacturing thereof |
US20160195331A1 (en) | 2013-10-17 | 2016-07-07 | Eugene Technology Co., Ltd. | Substrate treatment apparatus |
US20160196969A1 (en) | 2015-01-06 | 2016-07-07 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
USD761325S1 (en) | 2015-03-19 | 2016-07-12 | Issam N. Abed | Rear crankshaft seal housing |
US20160204436A1 (en) | 2012-12-28 | 2016-07-14 | Faradion Limited | Metal-containing compounds |
US20160203995A1 (en) | 2015-01-12 | 2016-07-14 | Lam Research Corporation | Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch) |
US20160204005A1 (en) | 2015-01-12 | 2016-07-14 | Applied Materials, Inc. | Support assembly for substrate backside discoloration control |
US9396956B1 (en) | 2015-01-16 | 2016-07-19 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
US20160211166A1 (en) | 2015-01-16 | 2016-07-21 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US20160211135A1 (en) | 2013-09-30 | 2016-07-21 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and recording medium |
US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
US20160215387A1 (en) | 2015-01-22 | 2016-07-28 | Kennametal Inc. | Low temperature cvd coatings and applications thereof |
US20160217857A1 (en) | 2015-01-22 | 2016-07-28 | Sandisk Technologies Inc. | Adaptive multi-page programming methods and apparatus for non-volatile memory |
US20160218028A1 (en) | 2015-01-22 | 2016-07-28 | Applied Materials, Inc. | Batch Heating and Cooling Chamber or Loadlock |
US20160222504A1 (en) | 2015-02-03 | 2016-08-04 | Asm Ip Holding B.V. | Selective deposition |
US20160225632A1 (en) | 2015-02-03 | 2016-08-04 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
US20160222516A1 (en) | 2013-09-11 | 2016-08-04 | Tokyo Electron Limited | Plasma processing device |
US20160222509A1 (en) | 2015-02-04 | 2016-08-04 | Tokyo Electron Limited | Substrate processing apparatus |
US20160225607A1 (en) | 2015-01-29 | 2016-08-04 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20160225588A1 (en) | 2015-02-03 | 2016-08-04 | Lam Research Corporation | Systems and methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films |
US9412582B2 (en) | 2014-03-24 | 2016-08-09 | Hitachi Kokusai Electric Inc. | Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
CN205448240U (en) | 2016-03-15 | 2016-08-10 | 核工业理化工程研究院华核新技术开发公司 | Portable self -loopa nuclear level air purifier of high -efficient type |
US20160237559A1 (en) | 2015-02-12 | 2016-08-18 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
USD764196S1 (en) | 2014-09-17 | 2016-08-23 | Sheryl Handler | Stool |
US20160245704A1 (en) | 2015-02-25 | 2016-08-25 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and thermocouple |
US9428833B1 (en) | 2015-05-29 | 2016-08-30 | Lam Research Corporation | Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal |
US20160256187A1 (en) | 2015-03-06 | 2016-09-08 | Ethicon Endo-Surgery, Llc | Time dependent evaluation of sensor data to determine stability, creep, and viscoelastic elements of measures |
US20160268102A1 (en) | 2015-03-11 | 2016-09-15 | Asm Ip Holding B.V. | Cross-flow reactor and method |
US20160268107A1 (en) | 2015-03-12 | 2016-09-15 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US9449987B1 (en) | 2015-08-21 | 2016-09-20 | Sandisk Technologies Llc | Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US9449843B1 (en) | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
US20160273101A1 (en) | 2015-03-17 | 2016-09-22 | Tokyo Electron Limited | Raw material gas supply apparatus and film forming apparatus |
US20160273128A1 (en) | 2013-11-25 | 2016-09-22 | Lg Siltron Inc. | Epitaxial wafer growth apparatus |
US20160273106A1 (en) | 2013-10-28 | 2016-09-22 | Safc Hitech Inc. | Metal complexes containing amidoimine ligands |
US20160276148A1 (en) | 2015-03-20 | 2016-09-22 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
US20160273095A1 (en) | 2015-03-18 | 2016-09-22 | Entegris, Inc. | Articles Coated With Fluoro-Annealed Films |
US20160276212A1 (en) | 2015-03-20 | 2016-09-22 | Renesas Electronics Corporation | Method For Producing Semiconductor Device |
US9455177B1 (en) | 2015-08-31 | 2016-09-27 | Dow Global Technologies Llc | Contact hole formation methods |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US20160279629A1 (en) | 2015-03-26 | 2016-09-29 | Daifuku Co., Ltd. | Storage Facility for Semiconductor Containers |
US20160281230A1 (en) | 2015-03-26 | 2016-09-29 | Lam Research Corporation | Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma |
US20160281223A1 (en) | 2013-11-26 | 2016-09-29 | Ultratech, Inc. | Plasma enhanced ald system |
US20160284517A1 (en) | 2015-03-26 | 2016-09-29 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium |
JP2016174158A (en) | 2016-04-08 | 2016-09-29 | 株式会社日立国際電気 | Substrate processing apparatus, and method for manufacturing semiconductor device |
US20160284542A1 (en) | 2015-03-25 | 2016-09-29 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US9460954B2 (en) | 2009-02-22 | 2016-10-04 | Mapper Lithography Ip B.V. | Method of clamping a substrate and clamp preparation unit using capillary clamping force |
US20160293398A1 (en) | 2015-04-03 | 2016-10-06 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US20160293609A1 (en) | 2015-04-01 | 2016-10-06 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3d nand memory devices |
CN106011785A (en) | 2016-06-07 | 2016-10-12 | 上海纳米技术及应用国家工程研究中心有限公司 | Method for preparing high-uniformity Nb-doped TiO2 transparent conducting thin film through atomic layer deposition |
US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
US20160307739A1 (en) | 2015-04-14 | 2016-10-20 | Dandan Co., Ltd. | Remote plasma generator using ceramic |
US20160307766A1 (en) | 2014-11-26 | 2016-10-20 | Asm Ip Holding B.V. | Cyclic doped aluminum nitride deposition |
US20160307740A1 (en) | 2015-04-20 | 2016-10-20 | Samsung Electronics Co., Ltd. | Substrate Processing System and Ceramic Coating Method Therefor |
US20160305015A1 (en) | 2014-02-17 | 2016-10-20 | Ihi Corporation | Heat-resistant composite material production method and production device |
US9478414B2 (en) | 2014-09-26 | 2016-10-25 | Asm Ip Holding B.V. | Method for hydrophobization of surface of silicon-containing film by ALD |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US20160314967A1 (en) | 2013-08-14 | 2016-10-27 | ASM IP Holding, B.V. | Structures and devices including germanium-tin films and methods of forming same |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US20160314962A1 (en) | 2016-06-30 | 2016-10-27 | American Air Liquide, Inc. | Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same |
US20160315168A1 (en) | 2016-06-30 | 2016-10-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Process for forming gate insulators for tft structures |
US20160312360A1 (en) | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US20160314960A1 (en) | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Plasma treatment to improve adhesion between hardmask film and silicon oxide film |
USD770993S1 (en) | 2015-09-04 | 2016-11-08 | Hitachi Kokusai Electric Inc. | Reaction tube |
US9496225B1 (en) | 2016-02-08 | 2016-11-15 | International Business Machines Corporation | Recessed metal liner contact with copper fill |
US20160334709A1 (en) | 2015-05-13 | 2016-11-17 | Tokyo Electron Limited | Extreme ultra-violet sensitivity reduction using shrink and growth method |
US20160336178A1 (en) | 2010-04-15 | 2016-11-17 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
US20160336392A1 (en) | 2014-01-28 | 2016-11-17 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and silicon carbide semiconductor device manufacturing method |
US20160345384A1 (en) | 2015-05-22 | 2016-11-24 | Applied Materials, Inc. | Azimuthally tunable multi-zone electrostatic chuck |
US20160343612A1 (en) | 2015-05-18 | 2016-11-24 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
US20160351747A1 (en) | 2014-01-15 | 2016-12-01 | The Regents Of The University Of Michigan | Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer |
US20160351413A1 (en) | 2015-05-29 | 2016-12-01 | Infineon Technologies Ag | Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer |
US20160358772A1 (en) | 2015-06-03 | 2016-12-08 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
US9520289B2 (en) | 2014-02-25 | 2016-12-13 | Samsung Electronics Co., Ltd. | Methods of forming a pattern of a semiconductor device |
US20160362813A1 (en) | 2015-06-12 | 2016-12-15 | Applied Materials, Inc. | Injector for semiconductor epitaxy growth |
US20160362783A1 (en) | 2015-06-12 | 2016-12-15 | Asm Ip Holding B.V. | Reactor system for sublimation of pre-clean byproducts and method thereof |
US20160365414A1 (en) | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | FINFET Structures and Methods of Forming the Same |
US20160365280A1 (en) | 2015-06-12 | 2016-12-15 | International Business Machines Corporation | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via |
US9523148B1 (en) | 2015-08-25 | 2016-12-20 | Asm Ip Holdings B.V. | Process for deposition of titanium oxynitride for use in integrated circuit fabrication |
US20160372321A1 (en) | 2015-06-22 | 2016-12-22 | Veeco Instruments, Inc. | Self-Centering Wafer Carrier System For Chemical Vapor Deposition |
US20160372744A1 (en) | 2014-03-20 | 2016-12-22 | Kabushiki Kaisha Toshiba | Active material for nonaqueous electrolyte battery, electrode for nonaqueous electrolyte battery, nonaqueous electrolyte secondary battery, battery pack, method of manufacturing active material for nonaqueous electrolyte battery, and vehicle |
US20160372365A1 (en) | 2015-06-16 | 2016-12-22 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
US20160376701A1 (en) | 2014-03-20 | 2016-12-29 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and ceiling part |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US20160376704A1 (en) | 2015-06-26 | 2016-12-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US20160379851A1 (en) | 2015-06-29 | 2016-12-29 | Bharath Swaminathan | Temperature controlled substrate processing |
US20170009347A1 (en) | 2015-07-07 | 2017-01-12 | Asm Ip Holding B.V. | Thin film deposition apparatus |
US20170011926A1 (en) | 2014-03-28 | 2017-01-12 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20170009367A1 (en) | 2015-07-09 | 2017-01-12 | Applied Materials, Inc. | Wafer electroplating chuck assembly |
US20170011950A1 (en) | 2015-07-07 | 2017-01-12 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US20170018570A1 (en) | 2011-03-16 | 2017-01-19 | Macronix International Co., Ltd. | Capacitor With 3D NAND Memory |
US20170018477A1 (en) | 2015-07-13 | 2017-01-19 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US20170022612A1 (en) | 2015-07-24 | 2017-01-26 | Air Products And Chemicals, Inc. | Methods For Depositing Group 13 Metal or Metalloid Nitride Films |
US20170025280A1 (en) | 2015-07-24 | 2017-01-26 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US20170025291A1 (en) | 2015-07-22 | 2017-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-chamber furnace for batch processing |
USD777546S1 (en) | 2015-05-14 | 2017-01-31 | Ebara Corporation | Work holder for polishing apparatus |
US20170032942A1 (en) | 2013-11-21 | 2017-02-02 | Entegris, Inc. | Surface coating for chamber components used in plasma systems |
US20170032943A1 (en) | 2015-07-27 | 2017-02-02 | Lam Research Corporation | Time varying segmented pressure control |
US20170032992A1 (en) | 2015-07-31 | 2017-02-02 | Infineon Technologies Ag | Substrate carrier, a method and a processing device |
US20170029945A1 (en) | 2015-07-29 | 2017-02-02 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
US20170033004A1 (en) | 2015-07-31 | 2017-02-02 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device |
US20170040164A1 (en) | 2015-08-05 | 2017-02-09 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US20170037513A1 (en) | 2015-08-03 | 2017-02-09 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US20170040206A1 (en) | 2015-08-04 | 2017-02-09 | Asm Ip Holding B.V. | Variable gap hard stop design |
US20170040198A1 (en) | 2015-08-07 | 2017-02-09 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
US20170040146A1 (en) | 2015-08-03 | 2017-02-09 | Lam Research Corporation | Plasma etching device with plasma etch resistant coating |
US9570302B1 (en) | 2016-02-10 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of patterning a material layer |
US20170044666A1 (en) | 2015-08-13 | 2017-02-16 | Asm Ip Holding B.V. | Thin film deposition apparatus |
US20170044664A1 (en) | 2016-10-28 | 2017-02-16 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films |
US20170044665A1 (en) | 2015-08-13 | 2017-02-16 | Asm Ip Holding B.V. | Deposition apparatus and deposition system having the same |
US20170047446A1 (en) | 2015-08-14 | 2017-02-16 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9574268B1 (en) | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
US20170053811A1 (en) | 2015-08-21 | 2017-02-23 | Lam Research Corporation | Pulsing rf power in etch process to enhance tungsten gapfill performance |
US20170051402A1 (en) | 2015-08-17 | 2017-02-23 | Asm Ip Holding B.V. | Susceptor and substrate processing apparatus |
US20170051405A1 (en) | 2015-08-18 | 2017-02-23 | Asm Ip Holding B.V. | Method for forming sin or sicn film in trenches by peald |
US20170051408A1 (en) | 2015-07-17 | 2017-02-23 | Hitachi Kokusai Electric Inc. | Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium |
US9583333B2 (en) | 2013-11-01 | 2017-02-28 | Applied Materials, Inc. | Low temperature silicon nitride films using remote plasma CVD technology |
US9583345B2 (en) | 2013-12-26 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning |
US20170062218A1 (en) | 2015-08-27 | 2017-03-02 | Applied Materials, Inc. | Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in pecvd system |
US20170062210A1 (en) | 2015-09-01 | 2017-03-02 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers |
US20170062258A1 (en) | 2012-04-19 | 2017-03-02 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
US20170062204A1 (en) | 2015-08-24 | 2017-03-02 | Asm Ip Holding B.V. | FORMATION OF SiN THIN FILMS |
US20170062209A1 (en) | 2015-08-25 | 2017-03-02 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by peald |
US20170058402A1 (en) | 2015-08-28 | 2017-03-02 | Samsung Electronics Co., Ltd. | Shower head of combinatorial spatial atomic layer deposition apparatus |
US20170062224A1 (en) | 2015-08-28 | 2017-03-02 | Applied Materials, Inc. | Methods of Depositing Metal Films Using Metal Oxyhalide Precursors |
US20170069725A1 (en) | 2014-06-26 | 2017-03-09 | Intel Corporation | Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same |
US9605736B1 (en) | 2013-05-31 | 2017-03-28 | Rct Systems, Inc. | High temperature electromagnetic actuator |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
USD782419S1 (en) | 2014-08-22 | 2017-03-28 | Christopher C. Willette | Female keyed lamp plug |
US20170092531A1 (en) | 2015-09-29 | 2017-03-30 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US20170091320A1 (en) | 2015-09-01 | 2017-03-30 | Panjiva, Inc. | Natural language processing for entity resolution |
US20170092469A1 (en) | 2015-09-25 | 2017-03-30 | Applied Materials, Inc. | Grooved backing plate for standing wave compensation |
US20170092847A1 (en) | 2015-09-30 | 2017-03-30 | Jong-uk Kim | Magnetoresistive random access memory device and method of manufacturing the same |
US20170092535A1 (en) | 2015-09-29 | 2017-03-30 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US9613801B2 (en) | 2013-03-14 | 2017-04-04 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
USD783351S1 (en) | 2015-05-28 | 2017-04-11 | Hitachi Kokusai Electric Inc. | Gas nozzle substrate processing apparatus |
US9618846B2 (en) | 2013-02-25 | 2017-04-11 | Lam Research Corporation | PECVD films for EUV lithography |
US20170104061A1 (en) | 2015-10-07 | 2017-04-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained nanowire cmos device and method of forming |
US20170100742A1 (en) | 2015-10-09 | 2017-04-13 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US20170103907A1 (en) | 2015-10-09 | 2017-04-13 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
US20170102612A1 (en) | 2015-10-13 | 2017-04-13 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
USD784276S1 (en) | 2013-08-06 | 2017-04-18 | Applied Materials, Inc. | Susceptor assembly |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US20170110601A1 (en) | 2015-10-16 | 2017-04-20 | Asm Ip Holding B.V. | Photoactive devices and materials |
US20170107621A1 (en) | 2015-10-15 | 2017-04-20 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by peald |
US20170110313A1 (en) | 2015-10-16 | 2017-04-20 | Asm Ip Holding B.V. | Implementing atomic layer deposition for gate dielectrics |
US20170114460A1 (en) | 2015-10-22 | 2017-04-27 | Asm Ip Holding B.V. | Semiconductor manufacturing system including deposition apparatus |
US20170117141A1 (en) | 2015-10-21 | 2017-04-27 | Asm Ip Holding B.V. | NbMC LAYERS |
US20170117222A1 (en) | 2015-10-22 | 2017-04-27 | Hyuk Kim | Vertical memory devices and methods of manufacturing the same |
US20170117202A1 (en) | 2012-07-27 | 2017-04-27 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
US20170114465A1 (en) | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | Methods Of Depositing Flowable Films Comprising SiO and SiN |
US20170114464A1 (en) | 2015-10-21 | 2017-04-27 | Tokyo Electron Limited | Vertical heat treatment apparatus |
USD785766S1 (en) | 2016-06-15 | 2017-05-02 | Asm Ip Holding B.V. | Shower plate |
US9640448B2 (en) | 2015-03-27 | 2017-05-02 | Tokyo Electron Limited | Film forming method, film forming apparatus, and storage medium |
CN206145834U (en) | 2016-11-01 | 2017-05-03 | 深圳信息职业技术学院 | Movable air purification device |
US20170121845A1 (en) | 2014-06-13 | 2017-05-04 | Forschungszentrum Jülich GmbH | Method For Depositing A Crystal Layer At Low Temperatures, In Particular A Photoluminescent IV-IV Layer On An IV Substrate, And An Optoelectronic Component Having Such A Layer |
US9644266B2 (en) | 2013-03-29 | 2017-05-09 | Tokyo Electron Limited | Film forming apparatus, gas supply device and film forming method |
US20170130332A1 (en) | 2015-11-09 | 2017-05-11 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US20170133260A1 (en) * | 2015-11-11 | 2017-05-11 | Lam Research Corporation | Lift Pin Assembly and Associated Methods |
US9653267B2 (en) | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
US20170140924A1 (en) | 2015-11-12 | 2017-05-18 | Asm Ip Holding B.V. | FORMATION OF SiOCN THIN FILMS |
US20170140925A1 (en) | 2015-11-12 | 2017-05-18 | Asm Ip Holding B.V. | FORMATION OF SiOCN THIN FILMS |
US20170136578A1 (en) | 2014-03-31 | 2017-05-18 | Mitsubishi Heavy Industries, Ltd. | Three-dimensional deposition device and three-dimensional deposition method |
USD787458S1 (en) | 2015-11-18 | 2017-05-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US20170146909A1 (en) | 2015-11-20 | 2017-05-25 | Lam Research Corporation | Euv photopatterning of vapor-deposited metal oxide-containing hardmasks |
US20170148918A1 (en) | 2015-11-25 | 2017-05-25 | Applied Materials, Inc. | Materials for tensile stress and low contact resistance and method of forming |
US9666528B1 (en) | 2016-02-23 | 2017-05-30 | International Business Machines Corporation | BEOL vertical fuse formed over air gap |
US20170154770A1 (en) | 2015-12-01 | 2017-06-01 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US20170152968A1 (en) | 2015-05-07 | 2017-06-01 | Applied Materials, Inc. | Corrosion control for chamber components |
US20170154895A1 (en) | 2014-06-23 | 2017-06-01 | Institute of Microelectronics, Chinese Academy of Sciences | Three-Dimensional Semiconductor Device and Manufacturing Method Therefor |
US9680268B1 (en) | 2016-05-18 | 2017-06-13 | Itt Manufacturing Enterprises Llc | Genderless electrical connectors |
US20170165624A1 (en) | 2014-07-28 | 2017-06-15 | Total Raffinage Chimie | Ceramic Orifice Chamber for Fluid Catalytic Cracking Unit |
US20170170033A1 (en) | 2015-12-14 | 2017-06-15 | Tdk Corporation | Mini-environment apparatus |
US20170167023A1 (en) | 2015-12-09 | 2017-06-15 | Lam Research Corporation | Silicon or silicon carbide gas injector for substrate processing systems |
USD789888S1 (en) | 2016-01-08 | 2017-06-20 | Asm Ip Holding B.V. | Electrode plate for semiconductor manufacturing apparatus |
USD790041S1 (en) | 2016-01-08 | 2017-06-20 | Asm Ip Holding B.V. | Gas dispersing plate for semiconductor manufacturing apparatus |
US20170178942A1 (en) | 2014-09-05 | 2017-06-22 | Rorze Corporation | Load port and load port atmosphere replacing method |
US20170178899A1 (en) | 2015-12-18 | 2017-06-22 | Lam Research Corporation | Directional deposition on patterned structures |
US20170179036A1 (en) | 2015-12-19 | 2017-06-22 | Applied Materials, Inc. | Conformal Amorphous Silicon As Nucleation Layer For W ALD Process |
US20170173696A1 (en) | 2014-05-08 | 2017-06-22 | Stratasys Ltd. | Method and apparatus for 3d printing by selective sintering |
US20170178939A1 (en) | 2015-12-17 | 2017-06-22 | Asm Ip Holding B.V. | Substrate transport device and substrate processing apparatus |
US20170175290A1 (en) | 2015-12-21 | 2017-06-22 | The Regents Of The University Of California | Growth of single crystal iii-v semiconductors on amorphous substrates |
CN106895521A (en) | 2017-03-01 | 2017-06-27 | 大连葆光节能空调设备厂 | Constant temperature, constant humidity, permanent net quiet indoor air stream |
US9691771B2 (en) | 2015-04-16 | 2017-06-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films |
US9691668B2 (en) | 2011-10-14 | 2017-06-27 | Epistar Corporation | Wafer carrier |
US20170186621A1 (en) | 2015-12-28 | 2017-06-29 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US20170186754A1 (en) | 2015-12-29 | 2017-06-29 | Asm Ip Holding B.V. | Atomic layer deposition of iii-v compounds to form v-nand devices |
WO2017108714A1 (en) | 2015-12-22 | 2017-06-29 | Sico Technology Gmbh | Injector of silicon for the semiconductor industry |
WO2017108713A1 (en) | 2015-12-22 | 2017-06-29 | Interglass Technology Ag | Vacuum-coating system for coating lenses |
US20170191861A1 (en) | 2014-05-30 | 2017-07-06 | Eltek S.P.A. | Sensor for detecting the level of a medium |
US20170191685A1 (en) | 2015-12-30 | 2017-07-06 | Lam Research Corporation | Self-sustained in-situ thermal control apparatus |
US20170191159A1 (en) | 2016-01-01 | 2017-07-06 | Applied Materials, Inc. | Non-Metallic Thermal CVD/ALD Gas Injector And Purge System |
US20170200622A1 (en) | 2014-05-30 | 2017-07-13 | Ebara Corporation | Vacuum evacuation system |
US20170196562A1 (en) | 2015-03-06 | 2017-07-13 | Ethicon Llc | Powered surgical instrument with parameter-based firing rate |
KR101758892B1 (en) | 2016-03-18 | 2017-07-17 | 정예호 | Mini vacuum cleaner for high-efficiency low-noiser |
US9708708B2 (en) | 2015-09-09 | 2017-07-18 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device |
US20170204516A1 (en) | 2013-03-08 | 2017-07-20 | Applied Materials, Inc. | Chamber component with protective coating suitable for protection against fluorine plasma |
WO2017125401A1 (en) | 2016-01-21 | 2017-07-27 | Knorr-Bremse Systeme für Schienenfahrzeuge GmbH | Air supply facility |
US20170213960A1 (en) | 2016-01-26 | 2017-07-27 | Arm Ltd. | Fabrication and operation of correlated electron material devices |
USD793526S1 (en) | 2016-04-08 | 2017-08-01 | Applied Materials, Inc. | Showerhead for a semiconductor processing chamber |
USD793572S1 (en) | 2015-06-10 | 2017-08-01 | Tokyo Electron Limited | Electrode plate for plasma processing apparatus |
USD793352S1 (en) | 2016-07-11 | 2017-08-01 | Asm Ip Holding B.V. | Getter plate |
US20170218515A1 (en) | 2016-01-28 | 2017-08-03 | Samsung Electronics Co., Ltd. | Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors |
US20170222008A1 (en) | 2016-01-29 | 2017-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and a method for fabricating the same |
USD793976S1 (en) | 2013-05-15 | 2017-08-08 | Ebara Corporation | Substrate retaining ring |
US20170226636A1 (en) | 2016-02-08 | 2017-08-10 | Illinois Tool Works Inc | Method and system for the localized deposit of metal on a surface |
USD794753S1 (en) | 2016-04-08 | 2017-08-15 | Applied Materials, Inc. | Showerhead for a semiconductor processing chamber |
US20170233868A1 (en) | 2016-02-11 | 2017-08-17 | Intermolecular, Inc. | Vapor Based Site-Isolated Processing Systems and Methods |
US20170232457A1 (en) | 2016-02-15 | 2017-08-17 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and precursor gas nozzle |
USD795208S1 (en) | 2015-08-18 | 2017-08-22 | Tokyo Electron Limited | Electrostatic chuck for semiconductor manufacturing equipment |
US9741559B2 (en) | 2013-02-22 | 2017-08-22 | Tokyo Electron Limited | Film forming method, computer storage medium, and film forming system |
US9741546B2 (en) | 2011-10-05 | 2017-08-22 | Applied Materials, Inc. | Symmetric plasma process chamber |
US20170243734A1 (en) | 2016-02-19 | 2017-08-24 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9748104B2 (en) | 2013-07-24 | 2017-08-29 | Tokyo Electron Limited | Method of depositing film |
US9748145B1 (en) | 2016-02-29 | 2017-08-29 | Globalfoundries Inc. | Semiconductor devices with varying threshold voltage and fabrication methods thereof |
US20170250068A1 (en) | 2016-02-19 | 2017-08-31 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US20170250075A1 (en) | 2013-12-18 | 2017-08-31 | Imec Vzw | Method of Producing Transition Metal Dichalcogenide Layer |
USD796458S1 (en) | 2016-01-08 | 2017-09-05 | Asm Ip Holding B.V. | Gas flow control plate for semiconductor manufacturing apparatus |
USD796670S1 (en) | 2013-06-17 | 2017-09-05 | Q-Med Ab | Syringe part |
US9754818B2 (en) | 2016-01-11 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via patterning using multiple photo multiple etch |
US20170256417A1 (en) | 2016-03-04 | 2017-09-07 | Micron Technology, Inc. | Method of forming patterns |
US20170253968A1 (en) | 2016-03-02 | 2017-09-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US20170256393A1 (en) | 2013-07-19 | 2017-09-07 | Lam Research Corporation | Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning |
USD797067S1 (en) | 2015-04-21 | 2017-09-12 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
US20170263438A1 (en) | 2016-03-13 | 2017-09-14 | Applied Materials, Inc. | Methods And Apparatus For Selective Dry Etch |
US20170263437A1 (en) | 2016-03-13 | 2017-09-14 | Applied Materials, Inc. | Selective Deposition Of Silicon Nitride Films For Spacer Applications |
US20170260649A1 (en) | 2016-03-09 | 2017-09-14 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US20170271143A1 (en) | 2016-03-17 | 2017-09-21 | Tokyo Electron Limited | Film Forming Method and Film Forming Apparatus |
US20170267531A1 (en) | 2016-03-18 | 2017-09-21 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US20170267527A1 (en) | 2016-03-15 | 2017-09-21 | Industry-Academic Cooperation Foundation, Yonsei University | Transition metal dichalcogenide alloy and method of manufacturing the same |
US20170271256A1 (en) | 2016-03-15 | 2017-09-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a stepped structure and contact wirings formed thereon |
US20170271191A1 (en) | 2016-03-17 | 2017-09-21 | Asm Ip Holding B.V. | Substrate supporting plate, thin film deposition apparatus including the same, and thin film deposition method |
US20170271501A1 (en) | 2014-09-24 | 2017-09-21 | Intel Corporation | Scaled tfet transistor formed using nanowire with surface termination |
US9773818B2 (en) | 2005-10-14 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device having transparent conductive film and metal film |
USD798248S1 (en) | 2015-06-18 | 2017-09-26 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
US20170278705A1 (en) | 2016-03-23 | 2017-09-28 | Tokyo Electron Limited | Nitride film forming method and storage medium |
US20170278707A1 (en) | 2016-03-24 | 2017-09-28 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US20170283313A1 (en) | 2016-03-29 | 2017-10-05 | Applied Materials, Inc. | Fluoride glazes from fluorine ion treatment |
US20170287681A1 (en) | 2016-03-29 | 2017-10-05 | Tokyo Electron Limited | Substrate processing apparatus |
US20170287744A1 (en) | 2016-03-30 | 2017-10-05 | Shibaura Mechatronics Corporation | Substrate processing apparatus and substrate processing method |
JP2017183242A (en) | 2016-03-31 | 2017-10-05 | 株式会社ノリタケカンパニーリミテド | PdRu ALLOY ELECTRODE MATERIAL AND PRODUCTION METHOD THEREOF |
US9786570B2 (en) | 2012-11-08 | 2017-10-10 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
US20170294339A1 (en) | 2016-04-12 | 2017-10-12 | Tokyo Electron Limited | METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES |
US20170294499A1 (en) | 2016-04-12 | 2017-10-12 | Apple Inc. | Electrical Components Having Metal Traces With Protected Sidewalls |
US20170294318A1 (en) | 2014-09-30 | 2017-10-12 | Hitachi Kokusai Electric Inc. | Substrate processing device, manufacturing method for semiconductor device, and reaction tube |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US20170301542A1 (en) | 2016-04-18 | 2017-10-19 | Asm Ip Holding B.V. | Combined anneal and selective deposition process |
US20170301519A1 (en) | 2016-04-14 | 2017-10-19 | Fm Industries, Inc. | Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor |
US20170303382A1 (en) | 2015-02-06 | 2017-10-19 | Mks Instruments Inc. | Apparatus and Method for Plasma Ignition with a Self-Resonating Device |
USD800782S1 (en) | 2015-11-09 | 2017-10-24 | Eaton Corporation | Drive plate |
US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
US9798308B2 (en) | 2014-01-27 | 2017-10-24 | Kelk Ltd. | Temperature controller for semiconductor wafer and temperature control method for semiconductor wafer |
US20170306494A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
US20170309528A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Dynamic wafer leveling/tilting/swiveling during a chemical vapor deposition process |
US20170309490A1 (en) | 2014-09-24 | 2017-10-26 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20170306480A1 (en) | 2016-04-21 | 2017-10-26 | Asm Ip Holding B.V. | Deposition of metal borides |
US20170306479A1 (en) | 2016-04-21 | 2017-10-26 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US20170306478A1 (en) | 2016-04-21 | 2017-10-26 | Asm Ip Holding B.V. | Deposition of metal borides |
US9803926B2 (en) | 2014-01-28 | 2017-10-31 | Tokyo Electron Limited | Support mechanism and substrate processing apparatus |
US20170314125A1 (en) | 2016-04-27 | 2017-11-02 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
US20170316940A1 (en) | 2016-02-19 | 2017-11-02 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US20170316933A1 (en) | 2016-05-02 | 2017-11-02 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US20170317194A1 (en) | 2016-05-02 | 2017-11-02 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812372B2 (en) | 2015-12-18 | 2017-11-07 | Samsung Electronics Co., Ltd. | Electrostatic chuck assembly, semiconductor manufacturing apparatus having the same, and method of measuring temperature of electrostatic chuck |
US9812319B1 (en) | 2016-07-06 | 2017-11-07 | Asm Ip Holding B.V. | Method for forming film filled in trench without seam or void |
USD801942S1 (en) | 2015-04-16 | 2017-11-07 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
US20170323784A1 (en) | 2016-05-08 | 2017-11-09 | Tokyo Electron Limited | Method for depositing a planarization layer using polymerization chemical vapor deposition |
US20170323783A1 (en) | 2016-12-11 | 2017-11-09 | Air Liquide Advanced Materials, Inc. | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
USD802472S1 (en) | 2015-08-06 | 2017-11-14 | Tokyo Electron Limited | Electrostatic chuck for semiconductor manufacturing equipment |
USD802546S1 (en) | 2016-01-08 | 2017-11-14 | Asm Ip Holding B.V. | Outer wall of reactor for semiconductor manufacturing apparatus |
US9820289B1 (en) | 2014-12-18 | 2017-11-14 | Sprint Spectrum L.P. | Method and system for managing quantity of carriers in air interface connection based on type of content |
US9824893B1 (en) | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
US9824884B1 (en) | 2016-10-06 | 2017-11-21 | Lam Research Corporation | Method for depositing metals free ald silicon nitride films using halide-based precursors |
US20170338192A1 (en) | 2016-05-17 | 2017-11-23 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
US20170338133A1 (en) | 2016-05-19 | 2017-11-23 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US20170338134A1 (en) | 2016-05-19 | 2017-11-23 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
USD803802S1 (en) | 2015-08-18 | 2017-11-28 | Tokyo Electron Limited | Electrostatic chuck for semiconductor manufacturing equipment |
US20170342559A1 (en) | 2016-05-25 | 2017-11-30 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ald using silicon precursor and hydrocarbon precursor |
US20170345674A1 (en) | 2016-05-29 | 2017-11-30 | Tokyo Electron Limited | Method of selective silicon nitride etching |
US9837355B2 (en) | 2016-03-22 | 2017-12-05 | International Business Machines Corporation | Method for maximizing air gap in back end of the line interconnect through via landing modification |
US20170350688A1 (en) | 2016-06-03 | 2017-12-07 | Applied Materials, Inc. | Substrate distance monitoring |
US9842835B1 (en) | 2016-10-10 | 2017-12-12 | International Business Machines Corporation | High density nanosheet diodes |
US20170358445A1 (en) | 2016-06-13 | 2017-12-14 | Gvd Corporation | Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles |
WO2017212546A1 (en) | 2016-06-07 | 2017-12-14 | 株式会社日立国際電気 | Substrate processing device, oven opening portion, semiconductor device production method and program |
US20170358670A1 (en) | 2016-06-08 | 2017-12-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Diamond on iii-nitride device |
JP2017220011A (en) | 2016-06-07 | 2017-12-14 | 株式会社神戸製鋼所 | Laminated film, display device, and input device |
US20170358482A1 (en) | 2016-06-08 | 2017-12-14 | Asm Ip Holding B.V. | Selective deposition of metallic films |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
US9847247B2 (en) | 2015-06-15 | 2017-12-19 | United Microelectronics Corp. | Method for filling gaps of semiconductor device and semiconductor device formed by the same |
TWM553518U (en) | 2017-07-20 | 2017-12-21 | Green Wind Technology Co Ltd | Motor insulation structure |
US20170365467A1 (en) | 2016-06-15 | 2017-12-21 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US20170373188A1 (en) | 2016-06-28 | 2017-12-28 | International Business Machines Corporation | Fabrication of a vertical fin field effect transistor with an asymmetric gate structure |
US20170372884A1 (en) | 2016-06-28 | 2017-12-28 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US20170372919A1 (en) | 2016-06-25 | 2017-12-28 | Applied Materials, Inc. | Flowable Amorphous Silicon Films For Gapfill Applications |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US20180005814A1 (en) | 2016-07-01 | 2018-01-04 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
WO2018003072A1 (en) | 2016-06-30 | 2018-01-04 | 株式会社日立国際電気 | Substrate processing device, method for manufacturing semiconductor device, and recording medium |
US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
USD807494S1 (en) | 2016-03-24 | 2018-01-09 | Lg Electronics Inc. | Cover for air purifier with humidifier |
US9865456B1 (en) | 2016-08-12 | 2018-01-09 | Micron Technology, Inc. | Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures |
US9865815B2 (en) | 2015-09-24 | 2018-01-09 | Lam Research Coporation | Bromine containing silicon precursors for encapsulation layers |
WO2018008088A1 (en) | 2016-07-05 | 2018-01-11 | 株式会社日立国際電気 | Substrate treatment apparatus, gas nozzle, and semiconductor device manufacturing method |
US20180011052A1 (en) | 2016-07-08 | 2018-01-11 | Volvo Car Corporation | Silicon carbide based field effect gas sensor for high temperature applications |
US20180010247A1 (en) | 2016-07-08 | 2018-01-11 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US20180010243A1 (en) | 2016-07-06 | 2018-01-11 | Samsung Electronics Co., Ltd. | Deposition process monitoring system, and method of controlling deposition process and method of fabricating semiconductor device using the system |
US9870964B1 (en) | 2016-09-28 | 2018-01-16 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device by determining and selecting cooling recipe based on temperature |
US20180019165A1 (en) | 2016-07-14 | 2018-01-18 | Entegris, Inc. | CVD Mo DEPOSITION BY USING MoOCl4 |
USD808254S1 (en) | 2015-02-25 | 2018-01-23 | Aluvision N.V. | Frame tightener |
US20180025907A1 (en) | 2016-07-19 | 2018-01-25 | Applied Materials, Inc. | Deposition Of Flowable Silicon-Containing Films |
US20180025939A1 (en) | 2016-07-19 | 2018-01-25 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9881788B2 (en) | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
US20180033614A1 (en) | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
WO2018020320A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180033645A1 (en) | 2016-07-26 | 2018-02-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, lid cover and method of manufacturing semiconductor device |
WO2018020316A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180033674A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
WO2018020327A2 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180033625A1 (en) | 2016-07-27 | 2018-02-01 | Asm Ip Holding B.V. | Method of processing substrate |
US20180040746A1 (en) | 2014-06-27 | 2018-02-08 | Sunpower Corporation | Passivation of light-receiving surfaces of solar cells with high energy gap (eg) materials |
CN107675144A (en) | 2017-09-15 | 2018-02-09 | 武汉华星光电技术有限公司 | Plasma enhanced chemical vapor deposition unit |
US20180047591A1 (en) | 2015-03-26 | 2018-02-15 | Murata Machinery, Ltd. | Supporting device and supporting method for articles |
US20180047621A1 (en) | 2016-08-09 | 2018-02-15 | Imec Vzw | Formation of a transition metal nitride |
US20180044800A1 (en) | 2015-02-13 | 2018-02-15 | Entegris, Inc. | Coatings for enhancement of properties and performance of substrate articles and apparatus |
US20180047749A1 (en) | 2014-12-22 | 2018-02-15 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
USD810705S1 (en) | 2016-04-01 | 2018-02-20 | Veeco Instruments Inc. | Self-centering wafer carrier for chemical vapor deposition |
US20180053660A1 (en) | 2016-08-16 | 2018-02-22 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US20180053769A1 (en) | 2016-08-17 | 2018-02-22 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US20180061851A1 (en) | 2016-09-01 | 2018-03-01 | Asm Ip Holding B.V. | 3d stacked multilayer semiconductor memory using doped select transistor channel |
US20180057937A1 (en) | 2016-08-25 | 2018-03-01 | Asm Ip Holding B.V. | Exhaust apparatus, and substrate processing apparatus and thin film fabricating method using the same |
US20180061628A1 (en) | 2016-08-31 | 2018-03-01 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US20180057934A1 (en) | 2016-08-31 | 2018-03-01 | Kennametal Inc. | Composite refractory coatings and applications thereof |
US20180057931A1 (en) | 2016-08-30 | 2018-03-01 | Rolls-Royce Corporation | Swirled flow chemical vapor deposition |
US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
US9909492B2 (en) | 2013-03-15 | 2018-03-06 | Prime Group Alliance, Llc | Opposed piston internal combustion engine with inviscid layer sealing |
US20180068950A1 (en) | 2016-09-06 | 2018-03-08 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements |
US20180068862A1 (en) | 2016-03-28 | 2018-03-08 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180076021A1 (en) | 2016-09-13 | 2018-03-15 | Tokyo Electron Limited | Substrate processing apparatus |
US9922824B2 (en) | 2014-12-24 | 2018-03-20 | Tokyo Electron Limited | Method of forming silicon film |
US9920451B2 (en) | 2009-02-25 | 2018-03-20 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US20180083435A1 (en) | 2015-03-16 | 2018-03-22 | Redler Technologies Ltd. | Automatic, Highly Reliable, Fully Redundant Electronic Circuit Breaker That Reduces or Prevents Short-Circuit Overcurrent |
US9929005B1 (en) | 2016-09-26 | 2018-03-27 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US9929055B2 (en) | 2014-10-30 | 2018-03-27 | Applied Materials, Inc. | Method to grow thin epitaxial films at low temperature |
US20180087152A1 (en) | 2016-09-28 | 2018-03-29 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, nozzle base, and manufacturing method for semiconductor device |
US20180090583A1 (en) | 2016-09-28 | 2018-03-29 | Samsung Electronics Co., Ltd. | Semiconductor Devices Having Reduced Contact Resistance |
US20180087156A1 (en) | 2016-09-27 | 2018-03-29 | Tokyo Electron Limited | Gas Introduction Mechanism and Processing Apparatus |
US20180096844A1 (en) | 2016-10-05 | 2018-04-05 | Stmicroelectronics Sa | Method of gas-phase deposition by epitaxy |
US20180096821A1 (en) | 2016-10-04 | 2018-04-05 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US20180094350A1 (en) | 2016-09-30 | 2018-04-05 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US20180097076A1 (en) | 2016-09-30 | 2018-04-05 | International Business Machines Corporation | Fully depleted soi device for reducing parasitic back gate capacitance |
US20180094351A1 (en) | 2016-09-30 | 2018-04-05 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US20180108587A1 (en) | 2016-10-13 | 2018-04-19 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US20180105701A1 (en) | 2016-10-13 | 2018-04-19 | Applied Materials, Inc. | Chemical conversion of yttria into yttrium fluoride and yttrium oxyfluoride to develop pre-seasoned corossion resistive coating for plasma components |
US20180105930A1 (en) | 2015-07-29 | 2018-04-19 | Korea Research Institute Of Standards And Science | Method for manufacturing two-dimensional transition metal dichalcogemide thin film |
US9951421B2 (en) | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
US20180114680A1 (en) | 2016-10-26 | 2018-04-26 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
US9960033B1 (en) | 2016-12-16 | 2018-05-01 | Asm Ip Holding B.V. | Method of depositing and etching Si-containing film |
US20180122959A1 (en) | 2016-10-27 | 2018-05-03 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US20180122642A1 (en) | 2016-11-01 | 2018-05-03 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US20180119283A1 (en) | 2016-11-01 | 2018-05-03 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ald using capacitively coupled electrodes with narrow gap |
US20180122709A1 (en) | 2016-11-01 | 2018-05-03 | Asm Ip Holding B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US20180130701A1 (en) | 2016-11-07 | 2018-05-10 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US20180126379A1 (en) | 2015-05-11 | 2018-05-10 | The University North Carolina at Chapel Hill | Fluidic devices with nanoscale manifolds for molecular transport, related systems and methods of analysis |
US9970112B2 (en) | 2011-12-27 | 2018-05-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20180135172A1 (en) | 2015-04-27 | 2018-05-17 | Sumco Corporation | Susceptor, epitaxial growth device, and epitaxial wafer |
US20180138036A1 (en) | 2016-11-14 | 2018-05-17 | Lam Research Corporation | Method for high modulus ald sio2 spacer |
US20180135179A1 (en) | 2016-11-14 | 2018-05-17 | Tokyo Electron Limited | Gas Injector and Vertical Heat Treatment Apparatus |
US20180135173A1 (en) | 2016-11-15 | 2018-05-17 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US20180142357A1 (en) | 2016-11-21 | 2018-05-24 | Tokyo Electron Limited | Substrate processing apparatus, injector, and substrate processing method |
US20180142353A1 (en) | 2016-11-18 | 2018-05-24 | Hitachi Kokusai Electric Inc. | Reaction tube structure and substrate processing apparatus |
US9984869B1 (en) | 2017-04-17 | 2018-05-29 | Asm Ip Holding B.V. | Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas |
US20180151346A1 (en) | 2016-11-28 | 2018-05-31 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition |
US20180148832A1 (en) | 2016-11-25 | 2018-05-31 | Applied Materials, Inc. | Methods for depositing flowable carbon films using hot wire chemical vapor deposition |
US20180151588A1 (en) | 2016-11-28 | 2018-05-31 | Sandisk Technologies Llc | Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof |
USD819580S1 (en) | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
US9987747B2 (en) | 2016-05-24 | 2018-06-05 | Semes Co., Ltd. | Stocker for receiving cassettes and method of teaching a stocker robot disposed therein |
US9991138B2 (en) | 2015-07-27 | 2018-06-05 | Tokyo Electron Limited | Etching method and etching apparatus |
US20180158716A1 (en) | 2016-12-01 | 2018-06-07 | Lam Research Corporation | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US20180155832A1 (en) | 2016-12-02 | 2018-06-07 | Asm Ip Holding B.V. | Atomic layer deposition of rhenium containing thin films |
US20180158688A1 (en) | 2016-11-01 | 2018-06-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US20180155836A1 (en) | 2016-12-02 | 2018-06-07 | Asm Ip Holding B.V. | Substrate processing apparatus and method of processing substrate |
US9997373B2 (en) | 2014-12-04 | 2018-06-12 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US20180166258A1 (en) | 2016-12-14 | 2018-06-14 | Asm Ip Holding B.V. | Substrate processing apparatus |
WO2018105349A1 (en) | 2016-12-09 | 2018-06-14 | 東京エレクトロン株式会社 | Film forming method for sic film |
US20180163305A1 (en) | 2016-12-14 | 2018-06-14 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US20180171472A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Shower plate structure for exhausting deposition inhibiting gas |
US20180173109A1 (en) | 2016-12-15 | 2018-06-21 | Imec Vzw | Lithographic Mask Layer |
US20180171477A1 (en) | 2016-12-19 | 2018-06-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
WO2018109551A2 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
WO2018109553A2 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US20180174801A1 (en) | 2016-12-21 | 2018-06-21 | Ulvac Technologies, Inc. | Apparatuses and methods for surface treatment |
US20180172172A1 (en) | 2016-12-15 | 2018-06-21 | The Boeing Company | Fluid flow control device |
WO2018109552A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Semiconductor processing apparatus |
US20180180509A1 (en) | 2015-07-29 | 2018-06-28 | Tokyo Electron Limited | Method for inspecting for leaks in gas supply system valves |
US20180179625A1 (en) | 2016-12-26 | 2018-06-28 | Tokyo Electron Limited | Film forming apparatus, film forming method and heat insulating member |
US20180182613A1 (en) | 2016-12-28 | 2018-06-28 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180182618A1 (en) | 2016-12-22 | 2018-06-28 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180187303A1 (en) | 2016-12-30 | 2018-07-05 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Lanthanide precursors and deposition of lanthanide-containing films using the same |
US20180189923A1 (en) | 2017-01-03 | 2018-07-05 | Qualcomm Incorporated | Draw call visibility stream |
US20180190496A1 (en) | 2015-09-03 | 2018-07-05 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system |
US10017856B1 (en) | 2017-04-17 | 2018-07-10 | Applied Materials, Inc. | Flowable gapfill using solvents |
US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
US20180195174A1 (en) | 2017-01-10 | 2018-07-12 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US20180204733A1 (en) | 2017-01-18 | 2018-07-19 | Tokyo Electron Limited | Method of preferential silicon nitride etching using sulfur hexafluoride |
US20180209042A1 (en) | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US20180223429A1 (en) | 2017-02-09 | 2018-08-09 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ald and peald |
US20180223047A1 (en) | 2017-02-08 | 2018-08-09 | Versum Materials Us, Llc | Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
CN108389798A (en) | 2018-01-24 | 2018-08-10 | 信利(惠州)智能显示有限公司 | Lithographic method, low-temperature polysilicon film transistor and AMOLED panel |
US20180230595A1 (en) | 2017-02-16 | 2018-08-16 | Hermes-Epitek Corporation | Vapor phase film-forming apparatus |
US20180233372A1 (en) | 2017-02-15 | 2018-08-16 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10060473B2 (en) | 2009-10-29 | 2018-08-28 | Oceana Energy Company | Energy conversion systems and methods |
US20180245215A1 (en) | 2015-09-11 | 2018-08-30 | Versum Materials Us, Llc | Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films |
US20180246101A1 (en) | 2012-08-07 | 2018-08-30 | Massachusetts Institute Of Technology | Anti-dengue virus antibodies and uses thereof |
USD827592S1 (en) | 2017-01-31 | 2018-09-04 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
US20180254211A1 (en) | 2015-08-27 | 2018-09-06 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
US20180258532A1 (en) | 2017-03-08 | 2018-09-13 | Kabushiki Kaisha Toshiba | Shower plate, processing apparatus, and ejection method |
US20180265973A1 (en) | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
US20180269057A1 (en) | 2017-03-15 | 2018-09-20 | Versum Materials Us, Llc | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials |
US20180265294A1 (en) | 2015-11-27 | 2018-09-20 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, substrate container transport system and operation mechanism |
USD829306S1 (en) | 2016-07-06 | 2018-09-25 | Asm Ip Holding B.V. | Shower plate |
US20180277423A1 (en) | 2014-12-19 | 2018-09-27 | Sunedison Semiconductor Limited | Systems and methods for performing epitaxial smoothing processes on semiconductor structures |
US20180274098A1 (en) | 2017-03-27 | 2018-09-27 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
US20180277338A1 (en) | 2017-03-27 | 2018-09-27 | Tokyo Electron Limited | Plasma generation method, plasma processing method using the same and plasma processing apparatus |
US20180286663A1 (en) | 2017-03-29 | 2018-10-04 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US20180286638A1 (en) | 2017-03-28 | 2018-10-04 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrate |
US20180286711A1 (en) | 2017-03-31 | 2018-10-04 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
US20180286672A1 (en) | 2017-03-31 | 2018-10-04 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
US20180286675A1 (en) | 2017-03-29 | 2018-10-04 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US20180294187A1 (en) | 2017-04-10 | 2018-10-11 | Lam Research Corporation | Low resistivity films containing molybdenum |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10106892B1 (en) | 2017-08-31 | 2018-10-23 | Globalfoundries Inc. | Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same |
US20180305247A1 (en) | 2015-10-02 | 2018-10-25 | Corning Incorporated | Methods for treating a glass surface to reduce particle adhesion |
US20180308701A1 (en) | 2017-04-20 | 2018-10-25 | Lam Research Corporation | Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition |
US20180315838A1 (en) | 2015-12-18 | 2018-11-01 | Intel Corporation | Stacked transistors |
US20180315597A1 (en) | 2017-04-27 | 2018-11-01 | Lam Research Corporation | Methods and apparatus for depositing silicon oxide on metal layers |
US20180312966A1 (en) | 2015-10-23 | 2018-11-01 | Applied Materials, Inc. | Methods For Spatial Metal Atomic Layer Deposition |
US20180323055A1 (en) | 2017-05-08 | 2018-11-08 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US20180323059A1 (en) | 2017-05-08 | 2018-11-08 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US20180323056A1 (en) | 2017-05-08 | 2018-11-08 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US20180327899A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films based on oxidation of metal flourides |
US20180325414A1 (en) | 2017-05-12 | 2018-11-15 | Tech4Imaging Llc | Electro-magneto volume tomography system and methodology for non-invasive volume tomography |
US20180331117A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof |
US10134617B2 (en) | 2013-12-26 | 2018-11-20 | Veeco Instruments Inc. | Wafer carrier having thermal cover for chemical vapor deposition systems |
US20180337087A1 (en) | 2017-05-18 | 2018-11-22 | Micron Technology, Inc. | Semiconductor Constructions Comprising Dielectric Material, and Methods of Forming Dielectric Fill Within Openings Extending into Semiconductor Constructions |
USD834686S1 (en) | 2016-12-15 | 2018-11-27 | Asm Ip Holding B.V. | Shower plate |
USRE47145E1 (en) | 2006-07-20 | 2018-11-27 | Kawasaki Jukogyo Kabushiki Kaisha | Wafer transfer apparatus and substrate transfer apparatus |
CN108910843A (en) | 2018-08-13 | 2018-11-30 | 中国工程物理研究院化工材料研究所 | A kind of preparation method of propellant fuel |
US20180350588A1 (en) | 2017-06-02 | 2018-12-06 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US20180350587A1 (en) | 2017-05-05 | 2018-12-06 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
US20180350620A1 (en) | 2017-05-31 | 2018-12-06 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US20180350653A1 (en) | 2017-05-30 | 2018-12-06 | Asm Ip Holding B.V. | Substrate supporting device and substrate processing apparatus including the same |
US20180355484A1 (en) | 2014-08-14 | 2018-12-13 | L'Air Liquide, Société Anonyme pour l'Etude et I'Exploitation des Procédés Georges Claude | Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films |
US20180355480A1 (en) | 2017-06-12 | 2018-12-13 | Asm Ip Holding B.V. | Heater block having continuous concavity |
US20180358222A1 (en) | 2017-06-08 | 2018-12-13 | Applied Materials, Inc. | High-density low temperature carbon films for hardmask and other patterning applications |
CN109000352A (en) | 2018-08-03 | 2018-12-14 | 珠海格力电器股份有限公司 | Air duct module, air duct structure with same and air conditioner |
US20180363131A1 (en) | 2017-06-15 | 2018-12-20 | Samsung Electronics Co., Ltd. | Tungsten precursor and method of forming tungsten containing layer using the same |
US20180363139A1 (en) | 2017-06-20 | 2018-12-20 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US20180371610A1 (en) | 2017-06-22 | 2018-12-27 | Kennametal Inc. | Cvd composite refractory coatings and applications thereof |
US20190006797A1 (en) | 2017-06-29 | 2019-01-03 | Commscope Technologies Llc | Inner contact for coaxial cable |
US20190003050A1 (en) | 2016-02-19 | 2019-01-03 | Merck Patent Gmbh | Deposition of Molybdenum Thin Films Using A Molybdenum Carbonyl Precursor |
US20190003052A1 (en) | 2017-06-28 | 2019-01-03 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10177024B2 (en) | 2015-05-12 | 2019-01-08 | Lam Research Corporation | High temperature substrate pedestal module and components thereof |
US20190013199A1 (en) | 2017-07-05 | 2019-01-10 | Asm Ip Holding B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US20190019670A1 (en) | 2017-07-13 | 2019-01-17 | Asm Ip Holding B.V. | Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber |
US20190019714A1 (en) | 2016-01-19 | 2019-01-17 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
US10186420B2 (en) | 2016-11-29 | 2019-01-22 | Asm Ip Holding B.V. | Formation of silicon-containing thin films |
US20190027583A1 (en) | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
US20190027584A1 (en) | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for selectively depositing a group iv semiconductor and related semiconductor device structures |
US20190027605A1 (en) | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
US20190027573A1 (en) | 2017-07-18 | 2019-01-24 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10193429B2 (en) | 2010-06-02 | 2019-01-29 | Boulder Wind Power, Inc. | Air gap control systems and methods |
US20190032209A1 (en) | 2017-07-26 | 2019-01-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US20190035605A1 (en) | 2017-07-26 | 2019-01-31 | Asm Ip Holding B.V. | Method of depositing film by peald using negative bias |
US20190035698A1 (en) | 2017-07-31 | 2019-01-31 | Tokyo Electron Limited | Processing apparatus and processing method |
US20190035647A1 (en) | 2017-07-31 | 2019-01-31 | Asm Ip Holding B.V. | Substrate processing device |
US20190032998A1 (en) | 2017-07-26 | 2019-01-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US20190040529A1 (en) | 2017-08-04 | 2019-02-07 | Asm Ip Holding B.V. | Showerhead assembly for distributing a gas within a reaction chamber and a method for controlling the temperature uniformity of a showerhead assembly |
US10204788B1 (en) | 2018-01-01 | 2019-02-12 | United Microelectronics Corp. | Method of forming high dielectric constant dielectric layer by atomic layer deposition |
USD840364S1 (en) | 2017-01-31 | 2019-02-12 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
WO2019030565A1 (en) | 2017-08-09 | 2019-02-14 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US20190051548A1 (en) | 2017-08-09 | 2019-02-14 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US20190051555A1 (en) | 2017-08-08 | 2019-02-14 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US20190046947A1 (en) | 2017-08-08 | 2019-02-14 | H Quest Vanguard, Inc. | Non-Thermal Micro-Plasma Conversion of Hydrocarbons |
US20190051544A1 (en) | 2017-08-08 | 2019-02-14 | Asm Ip Holding B.V. | Radiation shield |
US20190058043A1 (en) | 2016-03-30 | 2019-02-21 | Intel Corporation | Transistor gate-channel arrangements |
US20190057858A1 (en) | 2017-08-18 | 2019-02-21 | Lam Research Corporation | Geometrically selective deposition of a dielectric film |
TWD196097S (en) | 2018-02-01 | 2019-02-21 | 荷蘭商ASM知識產權私人 | Gas supply plate for semiconductor manufacturing apparatus |
US20190067014A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor device structures |
US20190067016A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method |
US20190066978A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20190067003A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures |
US20190067004A1 (en) | 2017-08-22 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
US20190066997A1 (en) | 2017-08-29 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US20190062907A1 (en) | 2017-08-31 | 2019-02-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20190067095A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method |
US20190067094A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US20190062917A1 (en) | 2016-04-29 | 2019-02-28 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Pressurization type method for manufacturing metal monoatomic layer, metal monoatomic layer structure, and pressurization type apparatus for manufacturing metal monoatomic layer |
US20190067085A1 (en) | 2016-03-07 | 2019-02-28 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
US10229851B2 (en) | 2016-08-30 | 2019-03-12 | International Business Machines Corporation | Self-forming barrier for use in air gap formation |
US10229985B1 (en) | 2017-12-04 | 2019-03-12 | International Business Machines Corporation | Vertical field-effect transistor with uniform bottom spacer |
US20190080903A1 (en) | 2017-09-13 | 2019-03-14 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
US20190078206A1 (en) | 2017-09-08 | 2019-03-14 | Applied Materials, Inc. | Fluorinated rare earth oxide ald coating for chamber productivity enhancement |
US20190085451A1 (en) | 2015-07-31 | 2019-03-21 | Versum Materials Us, Llc | Compositions and methods for depositing silicon nitride films |
US20190086807A1 (en) | 2017-09-21 | 2019-03-21 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US20190088555A1 (en) | 2017-09-18 | 2019-03-21 | Asm Ip Holding B.V. | Method for forming a semiconductor device structure and related semiconductor device structures |
US20190089143A1 (en) | 2017-09-21 | 2019-03-21 | Accessesp Uk Limited | Stress control cones for downhole electrical power system tubing encapsulated power cables |
KR20190032077A (en) | 2017-09-19 | 2019-03-27 | 서울과학기술대학교 산학협력단 | Remote plasma-based atomic layer deposition system |
US20190093221A1 (en) | 2017-09-22 | 2019-03-28 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US20190096708A1 (en) | 2017-09-28 | 2019-03-28 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US20190109002A1 (en) | 2017-10-10 | 2019-04-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US20190109043A1 (en) | 2017-05-01 | 2019-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
US20190109009A1 (en) | 2017-10-05 | 2019-04-11 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
USD846008S1 (en) | 2016-09-08 | 2019-04-16 | Battlemax (Pty) Ltd. | Suction cover |
US20190115206A1 (en) | 2017-04-25 | 2019-04-18 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US20190115451A1 (en) | 2017-10-17 | 2019-04-18 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor device |
US20190112711A1 (en) | 2016-04-01 | 2019-04-18 | 3M Innovative Properties Company | Roll-To-Roll Atomic Layer Deposition Apparatus and Method |
US20190131124A1 (en) | 2017-10-30 | 2019-05-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10287684B2 (en) | 2014-07-08 | 2019-05-14 | Kokusai Electric Corporation | Substrate processing apparatus |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US20190148224A1 (en) | 2017-11-16 | 2019-05-16 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US20190148398A1 (en) | 2017-11-16 | 2019-05-16 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US20190148556A1 (en) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with source/drain multi-layer structure and method for forming the same |
US20190148177A1 (en) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for processing substrates or wafers |
US10297440B2 (en) | 2015-09-30 | 2019-05-21 | Kokusai Electric Corporation | Method of manufacturing semiconductor device |
USD849055S1 (en) | 2017-03-02 | 2019-05-21 | Ebm-Papst Landshut Gmbh | Engine cap |
US20190157067A1 (en) | 2017-11-19 | 2019-05-23 | Applied Materials, Inc. | Methods For ALD Of Metal Oxides On Metal Surfaces |
USD849662S1 (en) | 2016-05-21 | 2019-05-28 | Worthington Industries, Inc. | Cylinder support system |
JP6519897B2 (en) | 2018-04-10 | 2019-05-29 | シンフォニアテクノロジー株式会社 | Purge nozzle unit, load port |
US20190163056A1 (en) | 2017-11-24 | 2019-05-30 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US20190172714A1 (en) | 2017-12-01 | 2019-06-06 | Applied Materials, Inc. | Highly etch selective amorphous carbon film |
US20190172701A1 (en) | 2017-12-04 | 2019-06-06 | Asm Ip Holding Bv | UNIFORM DEPOSITION OF SiOC ON DIELECTRIC AND METAL SURFACES |
US20190176435A1 (en) | 2016-08-30 | 2019-06-13 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
US20190181002A1 (en) | 2017-12-12 | 2019-06-13 | Asm Ip Holding B.V. | Method for manufacturing semiconductor device |
AT520629A4 (en) | 2018-05-22 | 2019-06-15 | Sico Tech Gmbh | Injector made of silicon for the semiconductor industry |
USRE47440E1 (en) | 2011-10-19 | 2019-06-18 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
US20190185999A1 (en) | 2017-12-15 | 2019-06-20 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US20190189447A1 (en) | 2017-12-19 | 2019-06-20 | Lam Research Corporation | Method for forming square spacers |
US10332747B1 (en) | 2018-01-24 | 2019-06-25 | Globalfoundries Inc. | Selective titanium nitride deposition using oxides of lanthanum masks |
US10332963B1 (en) | 2018-01-29 | 2019-06-25 | Globalfoundries Inc. | Uniformity tuning of variable-height features formed in trenches |
US20190198297A1 (en) | 2017-12-21 | 2019-06-27 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
US20190198571A1 (en) | 2017-12-21 | 2019-06-27 | International Business Machines Corporation | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element |
US20190204029A1 (en) | 2017-12-28 | 2019-07-04 | Asm Ip Holding B.V. | Cooling system, substrate processing system and flow rate adjusting method for cooling medium |
US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
US20190211450A1 (en) | 2018-01-10 | 2019-07-11 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
US10354873B2 (en) | 2016-06-08 | 2019-07-16 | Tokyo Electron Limited | Organic mandrel protection process |
US20190221433A1 (en) | 2018-01-16 | 2019-07-18 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US20190217277A1 (en) | 2016-11-09 | 2019-07-18 | Korea Research Institute Of Chemical Technology | Olefin metathesis reaction catalyst and preparation method therefor |
US10361366B2 (en) | 2017-08-03 | 2019-07-23 | Tokyo Electron Limited | Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making |
US20190229008A1 (en) * | 2018-01-25 | 2019-07-25 | Asm Ip Holding B.V. | Hybrid lift pin |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD855089S1 (en) | 2016-02-29 | 2019-07-30 | Moldman Systems Llc | Mixer assembly |
US20190237325A1 (en) | 2018-01-26 | 2019-08-01 | Applied Materials, Inc. | Carbon film gapfill for patterning application |
US20190237327A1 (en) | 2018-02-01 | 2019-08-01 | Asm Ip Holding B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US20190233940A1 (en) | 2018-01-26 | 2019-08-01 | Applied Materials, Inc. | Treatment methods for silicon nitride thin films |
US20190233446A1 (en) | 2018-01-30 | 2019-08-01 | Versum Materials Us, Llc | Organoamino-Functionalized Cyclic Oligosiloxanes for Deposition of Silicon-Containing Films |
US20190244803A1 (en) | 2018-02-06 | 2019-08-08 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US20190249303A1 (en) | 2018-02-09 | 2019-08-15 | Asm Ip Holding B.V. | Chemical precursors and methods for depositing a silicon oxide film on a substrate utilizing chemical precursors |
US20190252195A1 (en) | 2018-02-14 | 2019-08-15 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US20190249300A1 (en) | 2018-02-15 | 2019-08-15 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20190259612A1 (en) | 2018-02-20 | 2019-08-22 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US20190259611A1 (en) | 2018-02-20 | 2019-08-22 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10395963B2 (en) | 2008-05-19 | 2019-08-27 | Entegris, Inc. | Electrostatic chuck |
US20190264324A1 (en) | 2018-02-23 | 2019-08-29 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US20190273133A1 (en) | 2016-12-14 | 2019-09-05 | Intel Corporation | Transistor source/drain amorphous interlayer arrangements |
US20190271078A1 (en) | 2018-03-01 | 2019-09-05 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US20190272981A1 (en) | 2018-03-02 | 2019-09-05 | Lam Research Corporation | Quartz component with protective coating |
USD859136S1 (en) | 2017-07-31 | 2019-09-10 | Ge Healthcare Bio-Sciences Corp. | Tubing clamp |
US20190276934A1 (en) | 2018-03-09 | 2019-09-12 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for monitoring and controlling a semiconductor processing apparatus |
US20190287769A1 (en) | 2018-03-16 | 2019-09-19 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US10428419B2 (en) | 2010-12-28 | 2019-10-01 | Asm Ip Holding B.V. | Combination CVD/ALD method, source and pulse profile modification |
US20190304780A1 (en) | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US20190301014A1 (en) | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20190304790A1 (en) | 2018-03-27 | 2019-10-03 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US20190304776A1 (en) | 2018-03-30 | 2019-10-03 | Asm Ip Holding B.V. | Substrate processing method |
US20190304821A1 (en) | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US20190311894A1 (en) | 2015-03-30 | 2019-10-10 | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME |
US20190311940A1 (en) | 2018-04-09 | 2019-10-10 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
US20190319100A1 (en) | 2018-04-12 | 2019-10-17 | Sandisk Technologies Llc | Three-dimensional memory device including germanium-containing vertical channels and method of making the same |
US20190318910A1 (en) | 2018-04-17 | 2019-10-17 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD864134S1 (en) | 2018-10-24 | 2019-10-22 | Asm Ip Holding B.V. | Susceptor |
US20190322812A1 (en) | 2018-04-19 | 2019-10-24 | International Business Machines Corporation | Polymerizable self-assembled monolayers for use in atomic layer deposition |
US20190333761A1 (en) | 2016-06-01 | 2019-10-31 | Asm Ip Holding B.V. | Deposition of organic films |
US20190333753A1 (en) | 2018-04-30 | 2019-10-31 | Asm Ip Holding B.V. | PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) OF SiN USING SILICON-HYDROHALIDE PRECURSORS |
US20190330740A1 (en) | 2018-04-30 | 2019-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10468244B2 (en) | 2016-08-30 | 2019-11-05 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
US20190338418A1 (en) | 2018-05-03 | 2019-11-07 | Applied Materials, Inc. | Halogen resistant coatings and methods of making and using thereof |
US20190346300A1 (en) | 2018-05-08 | 2019-11-14 | Asm Ip Holding B.V. | Thin film forming method |
WO2019214578A1 (en) | 2018-05-11 | 2019-11-14 | 北京北方华创微电子装备有限公司 | Door opening apparatus, transmission chamber and semiconductor processing device |
US20190348261A1 (en) | 2018-05-09 | 2019-11-14 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
US20190348273A1 (en) | 2018-05-08 | 2019-11-14 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
WO2019217749A1 (en) | 2018-05-11 | 2019-11-14 | Lam Research Corporation | Methods for making euv patternable hard masks |
US20190348515A1 (en) | 2018-05-11 | 2019-11-14 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US10483154B1 (en) | 2018-06-22 | 2019-11-19 | Globalfoundries Inc. | Front-end-of-line device structure and method of forming such a front-end-of-line device structure |
USD867867S1 (en) | 2017-07-31 | 2019-11-26 | Ge Healthcare Bio-Sciences Corp. | Tubing clamp |
US20190363006A1 (en) | 2018-05-28 | 2019-11-28 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US20190362970A1 (en) | 2018-05-24 | 2019-11-28 | Yangtze Memory Technologies Co., Ltd. | Methods for repairing substrate lattice and selective epitaxy processing |
US20190363015A1 (en) | 2018-05-22 | 2019-11-28 | International Business Machines Corporation | Self-aligned gate contact isolation |
US20190362989A1 (en) | 2018-05-25 | 2019-11-28 | Applied Materials, Inc. | Substrate manufacturing apparatus and methods with factory interface chamber heating |
US20190371640A1 (en) | 2018-06-04 | 2019-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US20190368040A1 (en) | 2018-06-01 | 2019-12-05 | Asm Ip Holding B.V. | Infiltration apparatus and methods of infiltrating an infiltrateable material |
US20190368041A1 (en) | 2018-06-04 | 2019-12-05 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US20190376180A1 (en) | 2018-06-08 | 2019-12-12 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10510871B1 (en) | 2018-08-16 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US20190385907A1 (en) | 2018-06-19 | 2019-12-19 | Applied Materials, Inc. | High Bias Deposition of High Quality Gapfill |
US20190393308A1 (en) | 2018-06-21 | 2019-12-26 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US20190390343A1 (en) | 2018-06-21 | 2019-12-26 | Asm Ip Holding B.V. | Substrate processing system |
US20190393304A1 (en) | 2018-06-20 | 2019-12-26 | International Business Machines Corporation | DIELECTRIC ISOLATION AND SiGe CHANNEL FORMATION FOR INTEGRATION IN CMOS NANOSHEET CHANNEL DEVICES |
US20200002812A1 (en) | 2018-06-29 | 2020-01-02 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US20200002811A1 (en) | 2018-06-29 | 2020-01-02 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US20200013612A1 (en) | 2018-07-03 | 2020-01-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20200012081A1 (en) | 2017-03-15 | 2020-01-09 | Sony Semiconductor Solutions Corporation | Camera module, method of manufacturing the same, and electronic apparatus |
US20200018421A1 (en) | 2018-07-16 | 2020-01-16 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US20200035489A1 (en) | 2018-07-30 | 2020-01-30 | Applied Materials, Inc. | Method of selective silicon germanium epitaxy at low temperatures |
US20200040458A1 (en) | 2018-08-06 | 2020-02-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US20200052089A1 (en) | 2017-09-29 | 2020-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap-filling germanium through selective bottom-up growth |
US20200052056A1 (en) | 2018-08-13 | 2020-02-13 | Samsung Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing an organic light emitting diode display device |
US20200048768A1 (en) | 2018-08-09 | 2020-02-13 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US20200058469A1 (en) | 2018-08-14 | 2020-02-20 | Tokyo Electron Limited | Systems and methods of control for plasma processing |
US20200056282A1 (en) | 2018-08-16 | 2020-02-20 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
US20200066552A1 (en) | 2018-08-22 | 2020-02-27 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US20200066512A1 (en) | 2017-05-16 | 2020-02-27 | Asm Ip Holding B.V. | Selective peald of oxide on dielectric |
US20200064737A1 (en) | 2018-08-23 | 2020-02-27 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20200080200A1 (en) | 2018-09-11 | 2020-03-12 | Asm Ip Holding B.V. | Thin film deposition method |
US20200083469A1 (en) | 2015-07-28 | 2020-03-12 | Nexdot | Mid and far-infrared nanocrystals based photodetectors with enhanced performances |
US10590531B1 (en) | 2018-09-04 | 2020-03-17 | Kokusai Electric Corporation | Substrate processing apparatus, and method of manufacturing semiconductor device |
US10600637B2 (en) | 2016-05-06 | 2020-03-24 | Asm Ip Holding B.V. | Formation of SiOC thin films |
US20200105895A1 (en) | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capping Layers in Metal Gates of Transistors |
US20200105594A1 (en) | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cobalt Fill for Gate Structures |
US20200102653A1 (en) | 2018-10-01 | 2020-04-02 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US20200111690A1 (en) | 2018-10-03 | 2020-04-09 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20200109472A1 (en) | 2018-10-08 | 2020-04-09 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US20200111669A1 (en) | 2018-10-04 | 2020-04-09 | Asm Ip Holding B.V. | Method for depositing oxide film by peald using nitrogen |
US10622196B2 (en) | 2013-08-21 | 2020-04-14 | Tokyo Electron Limited | Plasma processing apparatus |
US10622236B2 (en) | 2017-08-30 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for handling wafer carrier doors |
USD881338S1 (en) | 2019-02-26 | 2020-04-14 | Ziyong Chen | Filter |
US20200118815A1 (en) | 2018-10-11 | 2020-04-16 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic cvd |
US20200118811A1 (en) | 2018-10-16 | 2020-04-16 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US20200119038A1 (en) | 2018-10-11 | 2020-04-16 | Micron Technology, Inc. | Semiconductor devices and systems with channel openings or pillars extending through a tier stack, and methods of formation |
US20200126771A1 (en) | 2018-10-19 | 2020-04-23 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US20200126840A1 (en) | 2018-10-19 | 2020-04-23 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US20200131634A1 (en) | 2018-10-26 | 2020-04-30 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
US20200135915A1 (en) | 2018-10-30 | 2020-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices and semiconductor devices |
US20200135512A1 (en) | 2018-10-31 | 2020-04-30 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US20200141003A1 (en) | 2018-11-02 | 2020-05-07 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US20200144058A1 (en) | 2018-11-07 | 2020-05-07 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US20200140995A1 (en) | 2018-11-06 | 2020-05-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US20200152750A1 (en) | 2017-03-28 | 2020-05-14 | Intel Corporation | Integrated circuit contact structures |
US20200152473A1 (en) | 2018-11-13 | 2020-05-14 | Tokyo Electron Limited | Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning |
US20200161129A1 (en) | 2018-11-16 | 2020-05-21 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US20200161438A1 (en) | 2018-11-16 | 2020-05-21 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US20200168485A1 (en) | 2018-11-28 | 2020-05-28 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US20200176246A1 (en) | 2018-11-30 | 2020-06-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US20200176244A1 (en) | 2018-12-04 | 2020-06-04 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US20200185249A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Ground electrode formed in an electrostatic chuck for a plasma processing chamber |
US20200181770A1 (en) | 2018-12-05 | 2020-06-11 | Asm Ip Holding B.V. | Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method |
WO2020118100A1 (en) | 2018-12-05 | 2020-06-11 | Lam Research Corporation | Void free low stress fill |
US20200185257A1 (en) | 2018-12-06 | 2020-06-11 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate transfer method |
US20200194253A1 (en) | 2018-12-14 | 2020-06-18 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US20200194268A1 (en) | 2018-12-13 | 2020-06-18 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US20200203157A1 (en) | 2018-12-20 | 2020-06-25 | Nanya Technology Corporation | Method for preparing multiplayer structure |
US10704143B1 (en) | 2019-01-25 | 2020-07-07 | Asm Ip Holding B.V. | Oxide film forming method |
US20200234989A1 (en) | 2019-01-22 | 2020-07-23 | Asm Ip Holding B.V. | Substrate processing device |
US20200232096A1 (en) | 2019-01-17 | 2020-07-23 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US20200251328A1 (en) | 2019-02-01 | 2020-08-06 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US20200258766A1 (en) | 2017-08-09 | 2020-08-13 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US20200266098A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US20200266208A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-d nand applications |
US20200266057A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US20200266097A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US20200270749A1 (en) | 2017-09-14 | 2020-08-27 | Versum Materials Us, Llc | Compositions and methods for depositing silicon-containing films |
US20200273728A1 (en) | 2015-08-06 | 2020-08-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US20200270752A1 (en) | 2019-02-22 | 2020-08-27 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US10763139B2 (en) | 2017-05-23 | 2020-09-01 | Tokyo Electron Limited | Vacuum transfer module and substrate processing apparatus |
US20200286726A1 (en) | 2019-03-08 | 2020-09-10 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US20200283894A1 (en) | 2017-06-23 | 2020-09-10 | Merck Patent Gmbh | Methods Of Atomic Layer Deposition For Selective Film Growth |
US20200286725A1 (en) | 2019-03-08 | 2020-09-10 | Asm Ip Holding B.V. | STRUCTURE INCLUDING SiOC LAYER AND METHOD OF FORMING SAME |
US20200283893A1 (en) | 2019-03-08 | 2020-09-10 | Asm Ip Holding B.V. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
US20200309455A1 (en) | 2019-03-28 | 2020-10-01 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US20200312681A1 (en) | 2019-03-28 | 2020-10-01 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20200312652A1 (en) | 2019-04-01 | 2020-10-01 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US20200318237A1 (en) | 2019-04-05 | 2020-10-08 | Asm Ip Holding B.V. | Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process |
US20200332416A1 (en) | 2019-04-19 | 2020-10-22 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US20200340138A1 (en) | 2019-04-24 | 2020-10-29 | Asm Ip Holding B.V. | Gas-phase reactor system and method of using same |
US20200354836A1 (en) | 2019-05-07 | 2020-11-12 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US20200357631A1 (en) | 2019-05-10 | 2020-11-12 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US20200365434A1 (en) | 2019-05-16 | 2020-11-19 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US20200365433A1 (en) | 2019-05-16 | 2020-11-19 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US20200385861A1 (en) | 2019-06-10 | 2020-12-10 | Asm Ip Holding B.V. | Method for cleaning quartz epitaxial chambers |
US20200385867A1 (en) | 2019-06-06 | 2020-12-10 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US20200395209A1 (en) | 2019-06-11 | 2020-12-17 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US20200395199A1 (en) | 2019-06-14 | 2020-12-17 | Asm Ip Holding B.V. | Substrate treatment apparatus and method of cleaning inside of chamber |
US20200402846A1 (en) | 2017-11-20 | 2020-12-24 | Lam Research Corporation | Self-limiting growth |
US20210002762A1 (en) | 2019-07-03 | 2021-01-07 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US20210013010A1 (en) | 2019-07-09 | 2021-01-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US20210013085A1 (en) | 2019-07-10 | 2021-01-14 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US20210013037A1 (en) | 2019-07-09 | 2021-01-14 | Asm Ip Holding B.V. | Structure including a photoresist underlayer and method of forming same |
US20210020432A1 (en) | 2019-07-19 | 2021-01-21 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US20210020429A1 (en) | 2019-07-17 | 2021-01-21 | ASM IP Holding B.V | Methods of forming silicon germanium structures |
US20210020470A1 (en) | 2019-07-16 | 2021-01-21 | Asm Ip Holding B.V. | Substrate processing device |
US20210020431A1 (en) | 2019-07-19 | 2021-01-21 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US20210020467A1 (en) | 2019-07-17 | 2021-01-21 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US20210017648A1 (en) | 2019-07-18 | 2021-01-21 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam, structures formed using the method and reactor system for performing the method |
US20210035786A1 (en) | 2019-07-30 | 2021-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210035842A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Cassette lid opening device |
US20210035785A1 (en) | 2019-07-30 | 2021-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210035841A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210035802A1 (en) | 2019-07-29 | 2021-02-04 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US20210035840A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210035839A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210033977A1 (en) | 2019-07-30 | 2021-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20210035854A1 (en) | 2019-07-29 | 2021-02-04 | Asm Ip Holding B.V. | Method of forming a structure using fluorine removal |
US20210035824A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210041284A1 (en) | 2019-08-05 | 2021-02-11 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
US20210043444A1 (en) | 2019-05-07 | 2021-02-11 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US20210040613A1 (en) | 2019-08-09 | 2021-02-11 | Asm Ip Holding B.V. | Heater assembly including cooling apparatus and method of using same |
US20210040615A1 (en) | 2019-08-09 | 2021-02-11 | Asm Ip Holding B.V. | Temperature-controlled chemical delivery system and reactor system including same |
US20210050231A1 (en) | 2019-08-14 | 2021-02-18 | Asm Ip Holding B.V. | Apparatus and method to process wafers |
US20210057570A1 (en) | 2019-08-23 | 2021-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
US20210057223A1 (en) | 2019-08-23 | 2021-02-25 | Asm Ip Holding B. V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US20210057214A1 (en) | 2019-08-23 | 2021-02-25 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US20210054504A1 (en) | 2019-08-21 | 2021-02-25 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US20210057275A1 (en) | 2019-08-22 | 2021-02-25 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
US20210066079A1 (en) | 2019-09-04 | 2021-03-04 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US20210066075A1 (en) | 2019-08-29 | 2021-03-04 | Asm Ip Holding B.V. | Structures including dielectric layers and methods of forming same |
US20210066080A1 (en) | 2019-09-03 | 2021-03-04 | Asm Ip Holding B.V. | Methods and apparatus for depositing a chalcogenide film and structures including the film |
US20210070783A1 (en) | 2016-02-12 | 2021-03-11 | Seastar Chemicals Inc. | Organometallic compound and method |
US20210074527A1 (en) | 2019-09-05 | 2021-03-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210071296A1 (en) | 2019-09-06 | 2021-03-11 | Asm Ip Holding B.V. | Exhaust component cleaning method and substrate processing apparatus including exhaust component |
US20210082692A1 (en) | 2019-09-17 | 2021-03-18 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
US20210090878A1 (en) | 2019-09-25 | 2021-03-25 | Asm Ip Holding B.V. | Substrate processing method |
USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
US20210104399A1 (en) | 2019-10-02 | 2021-04-08 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US20210102292A1 (en) | 2019-10-08 | 2021-04-08 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
US20210102290A1 (en) | 2019-10-08 | 2021-04-08 | Asm Ip Holding B.V. | Gas injection system and reactor system including same |
US20210102289A1 (en) | 2019-10-08 | 2021-04-08 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US20210104384A1 (en) | 2019-10-07 | 2021-04-08 | Applied Materials, Inc. | Integrated electrode and ground plane for a substrate support |
WO2021072042A1 (en) | 2019-10-08 | 2021-04-15 | Lam Research Corporation | Positive tone development of cvd euv resist films |
US20210108328A1 (en) | 2018-10-03 | 2021-04-15 | Asm Ip Holding B.V. | Susceptor having cf coating |
US20210111025A1 (en) | 2019-10-10 | 2021-04-15 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US20210111053A1 (en) | 2019-10-14 | 2021-04-15 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210118667A1 (en) | 2019-10-16 | 2021-04-22 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US20210118687A1 (en) | 2019-10-21 | 2021-04-22 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US20210118679A1 (en) | 2019-10-17 | 2021-04-22 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US20210125832A1 (en) | 2019-10-25 | 2021-04-29 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US20210125827A1 (en) | 2019-10-29 | 2021-04-29 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US20210134959A1 (en) | 2019-11-05 | 2021-05-06 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US20210143003A1 (en) | 2019-11-11 | 2021-05-13 | Asm Ip Holding B.V. | Method of forming a structure including silicon oxide |
US20210140043A1 (en) | 2018-07-26 | 2021-05-13 | Lam Research Corporation | Deposition of pure metal films |
US20210151348A1 (en) | 2019-11-20 | 2021-05-20 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US20210151315A1 (en) | 2019-11-15 | 2021-05-20 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US20210156024A1 (en) | 2019-11-26 | 2021-05-27 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210159077A1 (en) | 2019-11-26 | 2021-05-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US20210166910A1 (en) | 2019-12-02 | 2021-06-03 | Asm Ip Holding B.V. | Substrate support plate, substrate processing apparatus including the same, and substrate processing method |
US20210166925A1 (en) | 2019-11-29 | 2021-06-03 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210166940A1 (en) | 2019-12-02 | 2021-06-03 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US20210166924A1 (en) | 2019-11-29 | 2021-06-03 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210172064A1 (en) | 2019-12-04 | 2021-06-10 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210175052A1 (en) | 2019-12-06 | 2021-06-10 | Asm Ip Holding B.V. | Substrate processing apparatus, bevel mask and substrate processing method |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US20210180184A1 (en) | 2019-12-17 | 2021-06-17 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US20210180188A1 (en) | 2019-12-12 | 2021-06-17 | Asm Ip Holding B.V. | Substrate support plate, substrate processing apparatus including the same, and substrate processing method |
US20210193458A1 (en) | 2019-12-19 | 2021-06-24 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11053584B2 (en) | 2013-11-05 | 2021-07-06 | Taiwan Semiconductor Manufacturing Company Limited | System and method for supplying a precursor for an atomic layer deposition (ALD) process |
US20210210373A1 (en) | 2020-01-06 | 2021-07-08 | Asm Ip Holding B.V. | Channeled lift pin |
US20210207270A1 (en) | 2020-01-08 | 2021-07-08 | Asm Ip Holding B.V. | Injector |
US20210205758A1 (en) | 2020-01-06 | 2021-07-08 | Asm Ip Holding B.V. | Filter system for a reactor system |
US20210207269A1 (en) | 2020-01-06 | 2021-07-08 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
US20210214842A1 (en) | 2020-01-10 | 2021-07-15 | Applied Materials, Inc. | Catalyst enhanced seamless ruthenium gap fill |
US20210225642A1 (en) | 2020-01-16 | 2021-07-22 | Asm Ip Holding B.V. | Method of forming high aspect ratio features |
US20210225615A1 (en) | 2020-01-20 | 2021-07-22 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US20210225622A1 (en) | 2020-01-17 | 2021-07-22 | Asm Ip Holding B.V. | Substrate treatment apparatus and substrate treatment method for monitoring integrated value |
US20210225643A1 (en) | 2020-01-20 | 2021-07-22 | Asm Ip Holding B.V. | Method for deposition of silicon nitride layer using pretreatment, structure formed using the method, and system for performing the method |
US20210233772A1 (en) | 2018-01-19 | 2021-07-29 | Asm Ip Holding B.V. | Deposition method |
US20210230746A1 (en) | 2020-01-23 | 2021-07-29 | Asm Ip Holding B.V. | Systems and methods for stabilizing reaction chamber pressure |
US20210230744A1 (en) | 2020-01-29 | 2021-07-29 | Asm Ip Holding B.V. | Contaminant trap system for a reactor system |
US20210242011A1 (en) | 2020-02-03 | 2021-08-05 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US20210239614A1 (en) | 2020-02-04 | 2021-08-05 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US20210238742A1 (en) | 2020-02-05 | 2021-08-05 | Asm Ip Holding B.V. | Method of forming a structure including carbon material, structure formed using the method, and system for forming the structure |
US20210238736A1 (en) | 2018-05-03 | 2021-08-05 | Lam Research Corporation | Method of depositing tungsten and other metals in 3d nand structures |
US20210249303A1 (en) | 2020-02-07 | 2021-08-12 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US20210246556A1 (en) | 2020-02-12 | 2021-08-12 | Asm Ip Holding B.V. | Reactor system with multi-directional reaction chamber |
US20210257509A1 (en) | 2020-02-13 | 2021-08-19 | Asm Ip Holding B.V. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
US20210254216A1 (en) | 2020-02-13 | 2021-08-19 | Asm Ip Holding B.V. | Gas distribution assembly and method of using same |
US20210257213A1 (en) | 2020-02-14 | 2021-08-19 | Asm Ip Holding B.V. | Method of forming dielectric material layers using pulsed plasma power, structures and devices including the layers, and systems for forming the layers |
US20210254238A1 (en) | 2020-02-17 | 2021-08-19 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US20210265158A1 (en) | 2020-02-25 | 2021-08-26 | Asm Ip Holding B.V. | Method of forming low-k material layer, structure including the layer, and system for forming same |
US20210265134A1 (en) | 2017-12-19 | 2021-08-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US20210272821A1 (en) | 2018-09-11 | 2021-09-02 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20210273109A1 (en) | 2018-06-29 | 2021-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US20210268554A1 (en) | 2020-02-28 | 2021-09-02 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
US20210280448A1 (en) | 2020-03-04 | 2021-09-09 | Asm Ip Holding B.V. | Alignment fixture for a reactor system |
USD930721S1 (en) * | 2020-11-23 | 2021-09-14 | Elliot Kremerman | Circular spinner |
US20210287928A1 (en) | 2020-03-11 | 2021-09-16 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US20210288476A1 (en) | 2020-03-11 | 2021-09-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US20210287912A1 (en) | 2020-03-12 | 2021-09-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
US20210285102A1 (en) | 2020-03-11 | 2021-09-16 | Applied Materials, Inc. | Gap fill methods using catalyzed deposition |
US20210287878A1 (en) | 2020-03-13 | 2021-09-16 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210292902A1 (en) | 2020-03-17 | 2021-09-23 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
US20210313150A1 (en) | 2020-04-02 | 2021-10-07 | Asm Ip Holding B.V. | Thin film forming method |
US20210313178A1 (en) | 2020-04-03 | 2021-10-07 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US20210319982A1 (en) | 2020-04-10 | 2021-10-14 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the same |
US20210320003A1 (en) | 2020-04-13 | 2021-10-14 | Asm Ip Holding B.V. | Method of forming a nitrogen-containing carbon film and system for performing the method |
US20210320010A1 (en) | 2020-04-08 | 2021-10-14 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US20210327704A1 (en) | 2020-04-16 | 2021-10-21 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
US20210327714A1 (en) | 2020-04-21 | 2021-10-21 | Asm Ip Holding B.V. | Method for processing a substrate |
US20210324518A1 (en) | 2020-04-17 | 2021-10-21 | Asm Ip Holding B.V. | Injector configured for arrangement within a reactor of a vertical furnace and vertical furnace |
US20210327715A1 (en) | 2020-04-15 | 2021-10-21 | Asm Ip Holding B.V. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
US20210324510A1 (en) | 2020-04-15 | 2021-10-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
USD935497S1 (en) * | 2021-08-02 | 2021-11-09 | Elliot Kremerman | Spinner |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100459788B1 (en) | 2002-01-14 | 2004-12-04 | 주성엔지니어링(주) | 2 stage wafer lift pin |
-
2020
- 2020-09-11 US US29/750,123 patent/USD990534S1/en active Active
-
2021
- 2021-03-01 JP JPD2021-4208F patent/JP1692231S/ja active Active
- 2021-03-02 TW TW110301101F patent/TWD215535S/en unknown
Patent Citations (5781)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3089507A (en) | 1963-05-14 | Air eject system control valve | ||
FR686869A (en) | 1930-12-31 | 1930-07-31 | Jacob Ets | Mixer tap |
GB400010A (en) | 1931-10-05 | 1933-10-19 | Johann Puppe | Improvements in and connected with ingot moulds |
US2059480A (en) | 1933-09-20 | 1936-11-03 | John A Obermaier | Thermocouple |
US2161626A (en) | 1937-09-25 | 1939-06-06 | Walworth Patents Inc | Locking device |
US2240163A (en) | 1938-09-30 | 1941-04-29 | Permutit Co | Valve apparatus for controlling hydraulic or pneumatic machines |
US2266416A (en) | 1939-01-14 | 1941-12-16 | Western Electric Co | Control apparatus |
US2280778A (en) | 1939-09-29 | 1942-04-28 | John C Andersen | Garden tool |
US2410420A (en) | 1944-01-01 | 1946-11-05 | Robert B Bennett | Scraper |
US2441253A (en) | 1944-10-30 | 1948-05-11 | Rohim Mfg Company Inc | Valve |
US2563931A (en) | 1946-04-02 | 1951-08-14 | Honeywell Regulator Co | Rate responsive thermocouple |
US2480557A (en) | 1946-08-02 | 1949-08-30 | Harry S Cummins | Detachable thermocouple housing |
US2660061A (en) | 1949-03-05 | 1953-11-24 | Dominion Eng Works Ltd | Immersion type thermocouple temperature measuring device |
US2745640A (en) | 1953-09-24 | 1956-05-15 | American Viscose Corp | Heat exchanging apparatus |
GB752277A (en) | 1953-10-28 | 1956-07-11 | Canadian Ind 1954 Ltd | Improved thermocouple unit |
US2847320A (en) | 1956-05-08 | 1958-08-12 | Ohio Commw Eng Co | Method for gas plating with aluminum organo compounds |
US3015709A (en) * | 1959-04-09 | 1962-01-02 | Ite Circuit Breaker Ltd | Cover lift pin |
US3094396A (en) | 1959-07-07 | 1963-06-18 | Continental Can Co | Method of and apparatus for curing internal coatings on can bodies |
US2990045A (en) | 1959-09-18 | 1961-06-27 | Lipe Rollway Corp | Thermally responsive transmission for automobile fan |
US3038951A (en) | 1961-01-19 | 1962-06-12 | Leeds & Northrup Co | Fast acting totally expendable immersion thermocouple |
US3197682A (en) | 1961-04-13 | 1965-07-27 | Pure Oil Co | Safet electro-responsive-fluid chuck |
US3232437A (en) | 1963-03-13 | 1966-02-01 | Champlon Lab Inc | Spin-on filter cartridge |
US3410349A (en) | 1964-01-02 | 1968-11-12 | Ted R. Troutman | Tubing scraper and method |
US3263502A (en) | 1964-01-21 | 1966-08-02 | Redwood L Springfield | Multiple thermocouple support |
FR1408266A (en) | 1964-06-30 | 1965-08-13 | Realisations Electr Et Electro | Connection socket for thermocouples |
US3420622A (en) | 1965-02-27 | 1969-01-07 | Hoechst Ag | Process for obtaining fluorine compounds from digestion solutions of crude phosphates with nitric acid or hydrochloric acid |
US3332286A (en) | 1965-09-02 | 1967-07-25 | Gen Electric | Thermocouple pressure gauge |
GB1186889A (en) | 1966-06-02 | 1970-04-08 | Western Electric Co | Methods and apparatus for introducing Impurities into Gas Streams |
US3588192A (en) | 1969-06-02 | 1971-06-28 | Trw Inc | Hydraulic skid control system |
US3647387A (en) | 1970-03-19 | 1972-03-07 | Stanford Research Inst | Detection device |
US3647716A (en) | 1970-04-03 | 1972-03-07 | Westvaco Corp | Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon |
US3634740A (en) | 1970-04-20 | 1972-01-11 | Addressograph Multigraph | Electrostatic holddown |
US4393013A (en) | 1970-05-20 | 1983-07-12 | J. C. Schumacher Company | Vapor mass flow control system |
US3713899A (en) | 1970-11-12 | 1973-01-30 | Ford Motor Co | Thermocouple probe |
US3885504A (en) | 1971-01-09 | 1975-05-27 | Max Baermann | Magnetic stabilizing or suspension system |
US3718429A (en) | 1971-03-15 | 1973-02-27 | Du Pont | No-no2 analyzer |
US3814128A (en) | 1971-05-17 | 1974-06-04 | Tecalemit Engineering | Valve assembly having an actuator with a camming ball |
US4093491A (en) | 1971-06-24 | 1978-06-06 | Whelpton Hugh G | Fastener installation method |
US3833492A (en) | 1971-09-22 | 1974-09-03 | Pollution Control Ind Inc | Method of producing ozone |
US3796182A (en) | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
US3867205A (en) | 1972-04-20 | 1975-02-18 | Commissariat Energie Atomique | Refractory metal hot-junction thermocouple |
US3913058A (en) | 1972-07-25 | 1975-10-14 | Ngk Spark Plug Co | Thermosensor |
US3960559A (en) | 1972-10-19 | 1976-06-01 | Fuji Photo Film Co., Ltd. | Method of making a semiconductor device utilizing a light-sensitive etching agent |
US3913617A (en) | 1972-11-20 | 1975-10-21 | Hoogovens Ijmuiden Bv | Apparatus for mixing two gas flows |
FR2233614A1 (en) | 1973-06-13 | 1975-01-10 | Thermal Syndicate Ltd | |
US3854443A (en) | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
US3947685A (en) | 1974-02-15 | 1976-03-30 | Deutsche Forschungs- Und Versuchsanstalt Fur Luft- Und Raumfahrt E.V. | Method and arrangement for determining nitric oxide concentration |
US3904371A (en) | 1974-03-04 | 1975-09-09 | Beckman Instruments Inc | Chemiluminescent ammonia detection |
US3916270A (en) | 1974-05-02 | 1975-10-28 | Tektronix Inc | Electrostatic holddown apparatus |
SU494614A1 (en) | 1974-05-05 | 1975-12-05 | Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср | Remote level measurement device |
US3997638A (en) | 1974-09-18 | 1976-12-14 | Celanese Corporation | Production of metal ion containing carbon fibers useful in electron shielding applications |
US3887790A (en) | 1974-10-07 | 1975-06-03 | Vernon H Ferguson | Wrap-around electric resistance heater |
US3962004A (en) | 1974-11-29 | 1976-06-08 | Rca Corporation | Pattern definition in an organic layer |
US4058430A (en) | 1974-11-29 | 1977-11-15 | Tuomo Suntola | Method for producing compound thin films |
JPS589954B2 (en) | 1975-02-28 | 1983-02-23 | 松下電器産業株式会社 | rhythm hatsei sochi |
US3983401A (en) | 1975-03-13 | 1976-09-28 | Electron Beam Microfabrication Corporation | Method and apparatus for target support in electron projection systems |
GB1514921A (en) | 1975-04-02 | 1978-06-21 | Kanji S | Record-playing apparatus |
US4054071A (en) | 1975-06-17 | 1977-10-18 | Aetna-Standard Engineering Company | Flying saw with movable work shifter |
US4079944A (en) | 1975-12-05 | 1978-03-21 | Durley Iii Benton A | Cueing device for phonographs |
US4134425A (en) | 1976-03-12 | 1979-01-16 | Siemens Aktiengesellschaft | Device for distributing flowing media over a flow cross section |
US4048110A (en) | 1976-05-12 | 1977-09-13 | Celanese Corporation | Rhenium catalyst composition |
US4157751A (en) | 1976-08-13 | 1979-06-12 | Gewerkschaft Eisenhutte Westfalia | Scraper-chain conveyors |
USD249341S (en) | 1976-11-11 | 1978-09-12 | Umc Industries, Inc. | Electro-mechanical pulser |
US4194536A (en) | 1976-12-09 | 1980-03-25 | Eaton Corporation | Composite tubing product |
US4181330A (en) | 1977-03-22 | 1980-01-01 | Noriatsu Kojima | Horn shaped multi-inlet pipe fitting |
US4099041A (en) | 1977-04-11 | 1978-07-04 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4164959A (en) | 1977-04-15 | 1979-08-21 | The Salk Institute For Biological Studies | Metering valve |
US4179530A (en) | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
US4176630A (en) | 1977-06-01 | 1979-12-04 | Dynair Limited | Automatic control valves |
US4126027A (en) | 1977-06-03 | 1978-11-21 | Westinghouse Electric Corp. | Method and apparatus for eccentricity correction in a rolling mill |
US4149237A (en) | 1977-09-16 | 1979-04-10 | The Foxboro Company | Industrial process control system |
US4152760A (en) | 1977-09-16 | 1979-05-01 | The Foxboro Company | Industrial process control system |
US4145699A (en) | 1977-12-07 | 1979-03-20 | Bell Telephone Laboratories, Incorporated | Superconducting junctions utilizing a binary semiconductor barrier |
US4184188A (en) | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
US4217463A (en) | 1978-03-13 | 1980-08-12 | National Distillers And Chemical Corporation | Fast responsive, high pressure thermocouple |
US4241000A (en) | 1978-08-24 | 1980-12-23 | The United States Of America As Represented By The Secretary Of The Army | Process for producing polycrystalline cubic aluminum oxynitride |
US4229064A (en) | 1978-10-25 | 1980-10-21 | Trw Inc. | Polarizing adapter sleeves for electrical connectors |
US4314763A (en) | 1979-01-04 | 1982-02-09 | Rca Corporation | Defect detection system |
US4413022A (en) | 1979-02-28 | 1983-11-01 | Canon Kabushiki Kaisha | Method for performing growth of compound thin films |
GB2051875A (en) | 1979-05-29 | 1981-01-21 | Standard Telephones Cables Ltd | Preparing metal coatings |
US4234449A (en) | 1979-05-30 | 1980-11-18 | The United States Of America As Represented By The United States Department Of Energy | Method of handling radioactive alkali metal waste |
US4707815A (en) | 1979-09-29 | 1987-11-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for a record player distinguishing between recorded and unrecorded portions of a disc |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4324611A (en) | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
US4504439A (en) | 1980-08-14 | 1985-03-12 | Hochtemperatur-Reaktorbau Gmbh | Gas cooled nuclear reactor |
US4322592A (en) | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4355912A (en) | 1980-09-12 | 1982-10-26 | Haak Raymond L | Spring loaded sensor fitting |
US4479831A (en) | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
EP0058571A1 (en) | 1981-02-18 | 1982-08-25 | National Research Development Corporation | Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process |
US4333735A (en) | 1981-03-16 | 1982-06-08 | Exxon Research & Engineering Co. | Process and apparatus for measuring gaseous fixed nitrogen species |
US4466766A (en) | 1981-05-20 | 1984-08-21 | Ruska Instrument Corporation | Transfer apparatus |
US4535628A (en) | 1981-05-22 | 1985-08-20 | Hope Bjoern R | Apparatus for level measurements |
US4488506A (en) | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
USD269850S (en) | 1981-07-22 | 1983-07-26 | Drag Specialties, Inc. | Handlebar grip |
JPS5819462A (en) | 1981-07-24 | 1983-02-04 | Kawasaki Steel Corp | Electric welded steel pipe |
US4436674A (en) | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4495024A (en) | 1981-08-26 | 1985-01-22 | Edward Bok | Method for deposition of fluid and gaseous media on substrates for their transport |
US4481300A (en) | 1981-08-31 | 1984-11-06 | Raytheon Company | Aluminum oxynitride having improved optical characteristics and method of manufacture |
US4720362A (en) | 1981-08-31 | 1988-01-19 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
US4520116A (en) | 1981-08-31 | 1985-05-28 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
US4502094A (en) | 1981-09-14 | 1985-02-26 | U.S. Philips Corporation | Electrostatic chuck |
FR2517790A1 (en) | 1981-12-07 | 1983-06-10 | British Nuclear Fuels Ltd | Process gas valve esp. of uranium isotope separator - with sealed operating arrangement providing back-up for bellows seal |
US4412133A (en) | 1982-01-05 | 1983-10-25 | The Perkin-Elmer Corp. | Electrostatic cassette |
US4414492A (en) | 1982-02-02 | 1983-11-08 | Intent Patent A.G. | Electronic ballast system |
US4480284A (en) | 1982-02-03 | 1984-10-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Electrostatic chuck plate |
US4560590A (en) | 1982-02-24 | 1985-12-24 | Edward Bok | Method for applying a coating on a substrate |
US4484061A (en) | 1982-05-13 | 1984-11-20 | Sys-Tec, Inc. | Temperature control system for liquid chromatographic columns employing a thin film heater/sensor |
US4465716A (en) | 1982-06-02 | 1984-08-14 | Texas Instruments Incorporated | Selective deposition of composite materials |
US4455193A (en) | 1982-07-01 | 1984-06-19 | Commissariat A L'energie Atomique | Process for producing the field oxide of an integrated circuit |
US4401507A (en) | 1982-07-14 | 1983-08-30 | Advanced Semiconductor Materials/Am. | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
US4520421A (en) | 1982-08-11 | 1985-05-28 | Hitachi, Ltd. | Specimen supporting device |
US4575408A (en) | 1982-08-24 | 1986-03-11 | Edward Bok | Method for floating transport of substrates |
US4581520A (en) | 1982-09-07 | 1986-04-08 | Vu Duy Phach | Heat treatment machine for semiconductors |
US4454370A (en) | 1982-09-07 | 1984-06-12 | Wahl Instruments, Inc. | Thermocouple surface probe |
US4444990A (en) | 1982-09-08 | 1984-04-24 | Servo Corporation Of America | Heat sensing device |
US5242501A (en) | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
US4578560A (en) | 1982-09-17 | 1986-03-25 | Sumitomo Electric Industries, Ltd. | High frequency induction coupled plasma torch with concentric pipes having flanges thereon |
US4512113A (en) | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
US4499354A (en) | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
JPS5979545A (en) | 1982-10-29 | 1984-05-08 | Toshiba Corp | Electrostatic chucking device |
JPS59127847A (en) | 1983-01-13 | 1984-07-23 | Tokuda Seisakusho Ltd | Electrostatic chucking unit for sputtering device |
JPS60110133A (en) | 1983-01-24 | 1985-06-15 | Toshiba Corp | Fault checking apparatus in electrostatic chuck |
US4622918A (en) | 1983-01-31 | 1986-11-18 | Integrated Automation Limited | Module for high vacuum processing |
US4570328A (en) | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
JPS59211779A (en) | 1983-05-14 | 1984-11-30 | Toshiba Corp | Compressor |
US4537001A (en) | 1983-05-23 | 1985-08-27 | Uppstroem Leif R | Building elements |
US4548688A (en) | 1983-05-23 | 1985-10-22 | Fusion Semiconductor Systems | Hardening of photoresist |
USD274122S (en) | 1983-06-20 | 1984-06-05 | Drag Specialties, Inc. | Motorcycle handlebar grip |
US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
US4496828A (en) | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4579623A (en) | 1983-08-31 | 1986-04-01 | Hitachi, Ltd. | Method and apparatus for surface treatment by plasma |
US4738748A (en) | 1983-09-30 | 1988-04-19 | Fujitsu Limited | Plasma processor and method for IC fabrication |
US4579080A (en) | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
US4655592A (en) | 1983-12-30 | 1987-04-07 | Hamamatsu Systems, Inc. | Particle detection method and apparatus |
US4554611A (en) | 1984-02-10 | 1985-11-19 | U.S. Philips Corporation | Electrostatic chuck loading |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US4735259A (en) | 1984-02-21 | 1988-04-05 | Hewlett-Packard Company | Heated transfer line for capillary tubing |
USD288556S (en) | 1984-02-21 | 1987-03-03 | Pace, Incorporated | Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards |
US4527005A (en) | 1984-03-13 | 1985-07-02 | The United States Of America As Represented By The United States Department Of Energy | Spring loaded thermocouple module |
US4512841A (en) | 1984-04-02 | 1985-04-23 | International Business Machines Corporation | RF Coupling techniques |
US4724272A (en) | 1984-04-17 | 1988-02-09 | Rockwell International Corporation | Method of controlling pyrolysis temperature |
US4575636A (en) | 1984-04-30 | 1986-03-11 | Rca Corporation | Deep ultraviolet (DUV) flood exposure system |
US4611966A (en) | 1984-05-30 | 1986-09-16 | Johnson Lester R | Apparatus for transferring semiconductor wafers |
US4590326A (en) | 1984-06-14 | 1986-05-20 | Texaco Inc. | Multi-element thermocouple |
US4534816A (en) | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
US4858557A (en) | 1984-07-19 | 1989-08-22 | L.P.E. Spa | Epitaxial reactors |
JPS6138863A (en) | 1984-07-30 | 1986-02-24 | Toshiba Corp | Polishing apparatus |
US4662987A (en) | 1984-08-01 | 1987-05-05 | Integrated Automation, Limited | Method of double floating transport and processing of wafers within a confined passageway |
US4700089A (en) | 1984-08-23 | 1987-10-13 | Fujitsu Limited | Delay circuit for gate-array LSI |
US4579378A (en) | 1984-10-31 | 1986-04-01 | Snyders Robert V | Mortar joint pointing guide |
US5650013A (en) | 1984-11-26 | 1997-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Layer member forming method |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
US6984595B1 (en) | 1984-11-26 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Layer member forming method |
US4693211A (en) | 1985-01-10 | 1987-09-15 | Dainippon Screen Mfg. Co., Ltd. | Surface treatment apparatus |
US4620998A (en) | 1985-02-05 | 1986-11-04 | Haresh Lalvani | Crescent-shaped polygonal tiles |
US4624728A (en) | 1985-06-11 | 1986-11-25 | Tegal Corporation | Pin lift plasma processing |
JPS624231U (en) | 1985-06-22 | 1987-01-12 | ||
US4653541A (en) | 1985-06-26 | 1987-03-31 | Parker Hannifin Corporation | Dual wall safety tube |
WO1987001508A1 (en) | 1985-08-28 | 1987-03-12 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
US4789294A (en) | 1985-08-30 | 1988-12-06 | Canon Kabushiki Kaisha | Wafer handling apparatus and method |
US4776744A (en) | 1985-09-09 | 1988-10-11 | Applied Materials, Inc. | Systems and methods for wafer handling in semiconductor process equipment |
US4721534A (en) | 1985-09-12 | 1988-01-26 | System Planning Corporation | Immersion pyrometer |
US5512102A (en) | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US4949671A (en) | 1985-10-24 | 1990-08-21 | Texas Instruments Incorporated | Processing apparatus and method |
US4664769A (en) | 1985-10-28 | 1987-05-12 | International Business Machines Corporation | Photoelectric enhanced plasma glow discharge system and method including radiation means |
US4720407A (en) | 1985-12-18 | 1988-01-19 | Heraeus Quarzschmelze Gmbh | Double-walled quartz-glass tube for semiconductor-technology processes |
US4771015A (en) | 1985-12-28 | 1988-09-13 | Canon Kabushiki Kaisha | Method for producing an electronic device having a multi-layer structure |
US4857137A (en) | 1986-01-31 | 1989-08-15 | Hitachi, Ltd. | Process for surface treatment |
NL8600255A (en) | 1986-02-03 | 1987-09-01 | Bok Edward | Installation for floating transport and processing of wafers - provides transfer of successive wafers under floating condition through interfacing tunnel passages |
US4654226A (en) | 1986-03-03 | 1987-03-31 | The University Of Delaware | Apparatus and method for photochemical vapor deposition |
US4781511A (en) | 1986-03-25 | 1988-11-01 | Shimizu Construction Co., Ltd. | Semiconductor processing system |
JPS62237236A (en) | 1986-04-09 | 1987-10-17 | Hitachi Ltd | Constant temperature clean work room |
US4764076A (en) | 1986-04-17 | 1988-08-16 | Varian Associates, Inc. | Valve incorporating wafer handling arm |
US4917556A (en) | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
US4670126A (en) | 1986-04-28 | 1987-06-02 | Varian Associates, Inc. | Sputter module for modular wafer processing system |
US4770590A (en) | 1986-05-16 | 1988-09-13 | Silicon Valley Group, Inc. | Method and apparatus for transferring wafers between cassettes and a boat |
US4722298A (en) | 1986-05-19 | 1988-02-02 | Machine Technology, Inc. | Modular processing apparatus for processing semiconductor wafers |
US4747367A (en) | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
USD309702S (en) | 1986-06-25 | 1990-08-07 | Don Hall | Safety clamp attachment for a hammer |
US4718637A (en) | 1986-07-02 | 1988-01-12 | Mdc Vacuum Products Corporation | High vacuum gate valve having improved metal vacuum joint |
US4681134A (en) | 1986-07-23 | 1987-07-21 | Paris Sr Raymond L | Valve lock |
US5183511A (en) | 1986-07-23 | 1993-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus with a glow discharge system |
US4812201A (en) | 1986-07-25 | 1989-03-14 | Tokyo Electron Limited | Method of ashing layers, and apparatus for ashing layers |
US4721533A (en) | 1986-08-01 | 1988-01-26 | System Planning Corporation | Protective structure for an immersion pyrometer |
US4749416A (en) | 1986-08-01 | 1988-06-07 | System Planning Corporation | Immersion pyrometer with protective structure for sidewall use |
DE3626724A1 (en) | 1986-08-07 | 1988-02-11 | Siemens Ag | Arrangement for surface testing (examination) |
US4882199A (en) | 1986-08-15 | 1989-11-21 | Massachusetts Institute Of Technology | Method of forming a metal coating on a substrate |
US4950624A (en) | 1986-09-09 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of depositing films using photo-CVD with chamber plasma cleaning |
US5427824A (en) | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
US4717461A (en) | 1986-09-15 | 1988-01-05 | Machine Technology, Inc. | System and method for processing workpieces |
US4938815A (en) | 1986-10-15 | 1990-07-03 | Advantage Production Technology, Inc. | Semiconductor substrate heater and reactor process and apparatus |
US4750520A (en) | 1986-10-16 | 1988-06-14 | Dragerwerk Aktiengesellschaft | Electrically-actuable valve |
US4725204A (en) | 1986-11-05 | 1988-02-16 | Pennwalt Corporation | Vacuum manifold pumping system |
US4867629A (en) | 1986-11-20 | 1989-09-19 | Shimizu Construction Co., Ltd. | Dusttight storage cabinet apparatus for use in clean rooms |
JPS63136532A (en) | 1986-11-27 | 1988-06-08 | Nec Kyushu Ltd | Thermal treatment equipment for semiconductor substrate |
US4775281A (en) | 1986-12-02 | 1988-10-04 | Teradyne, Inc. | Apparatus and method for loading and unloading wafers |
US5882165A (en) | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US4804086A (en) | 1986-12-22 | 1989-02-14 | Siemens Aktiengesellschaft | Transport container with an interchangeable inside container |
USD311126S (en) | 1986-12-23 | 1990-10-09 | Joseph Crowley | Shelf extending mounting bracket for additional product display |
US4753856A (en) | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
SU1408319A1 (en) | 1987-01-06 | 1988-07-07 | Всесоюзный научно-исследовательский институт аналитического приборостроения | Chemoluminescent gas analyzer for nitrogen oxides |
US4802441A (en) | 1987-01-08 | 1989-02-07 | Btu Engineering Corporation | Double wall fast cool-down furnace |
US4753192A (en) | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
FR2610007A1 (en) | 1987-01-22 | 1988-07-29 | Bmi Fours Ind | Vertical industrial oven with peripheral ventilation |
US4886162A (en) | 1987-02-06 | 1989-12-12 | Sgs-Thomson Microelectronics S.P.A. | Container for vacuum storing and/or shipping silicon wafers |
US4976996A (en) | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US4874273A (en) | 1987-03-16 | 1989-10-17 | Hitachi, Ltd. | Apparatus for holding and/or conveying articles by fluid |
US4863374A (en) | 1987-03-27 | 1989-09-05 | Edward Orton, Jr., Ceramic Foundation | Kiln with ventilation system |
US4821674A (en) | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US5374315A (en) | 1987-03-31 | 1994-12-20 | Advanced Semiconductor Materials America, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4790258A (en) | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
US4812217A (en) | 1987-04-27 | 1989-03-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method and apparatus for feeding and coating articles in a controlled atmosphere |
US4780169A (en) | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
US4827430A (en) | 1987-05-11 | 1989-05-02 | Baxter International Inc. | Flow measurement system |
US4738618A (en) | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
US4808387A (en) | 1987-05-15 | 1989-02-28 | Exxon Chemical Patents Inc. | Stabilization of vanadium tetrachloride |
US4871523A (en) | 1987-05-15 | 1989-10-03 | Exxon Chemical Patents Inc. | Vanadium tetrachloride stabilization |
US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
US4991614A (en) | 1987-06-25 | 1991-02-12 | Kvaerner Engineering A/S | Method and a plant for transport of hydrocarbons over a long distance from an offshore source of hydrocarbons |
NL8701549A (en) | 1987-07-01 | 1989-02-01 | Asm International N V Amtc | Magnetron plasma reactor for plasma etching and depositing IC - is filled with ionisable gas subjected to RF and magnetic fields |
US4837113A (en) | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Method for depositing compound from group II-VI |
US5062386A (en) | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
USD327534S (en) | 1987-07-30 | 1992-06-30 | CLM Investments, Inc. | Floor drain strainer |
US4854263A (en) | 1987-08-14 | 1989-08-08 | Applied Materials, Inc. | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US4854263B1 (en) | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US5961775A (en) | 1987-08-19 | 1999-10-05 | Fujitsu Limited | Apparatus for removing organic resist from semiconductor |
US4925388A (en) | 1987-08-26 | 1990-05-15 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat treating substrates capable of quick cooling |
US4756794A (en) | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
US5049029A (en) | 1987-09-10 | 1991-09-17 | Tokyo Electron Limited | Handling apparatus for transferring a semiconductor wafer or LCD |
US5180435A (en) | 1987-09-24 | 1993-01-19 | Research Triangle Institute, Inc. | Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer |
US4828224A (en) | 1987-10-15 | 1989-05-09 | Epsilon Technology, Inc. | Chemical vapor deposition system |
US4854266A (en) | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
US4916091A (en) | 1987-11-05 | 1990-04-10 | Texas Instruments Incorporated | Plasma and plasma UV deposition of SiO2 |
US4880982A (en) | 1987-11-17 | 1989-11-14 | Impex Production & Development A/S (Ltd.) | Fluid indicator for a containment vessel |
US4984904A (en) | 1987-12-24 | 1991-01-15 | Kawaso Electric Industrial Co., Ltd. | Apparatus for continuously measuring temperature of molten metal and method for making same |
US4931135A (en) | 1987-12-25 | 1990-06-05 | Tokyo Electron Limited | Etching method and etching apparatus |
US4830515A (en) | 1987-12-28 | 1989-05-16 | Omega Engineering, Inc. | Mounting clip for a thermocouple assembly |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
JPH01185176A (en) | 1988-01-18 | 1989-07-24 | Fujitsu Ltd | Processing method using electrostatic adsorption |
US5027746A (en) | 1988-03-22 | 1991-07-02 | U.S. Philips Corporation | Epitaxial reactor having a wall which is protected from deposits |
US5069591A (en) | 1988-03-24 | 1991-12-03 | Tel Sagami Limited | Semiconductor wafer-processing apparatus |
US5067437A (en) | 1988-03-28 | 1991-11-26 | Kabushiki Kaisha Toshiba | Apparatus for coating of silicon semiconductor surface |
US4978567A (en) | 1988-03-31 | 1990-12-18 | Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. | Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
US5065698A (en) | 1988-04-11 | 1991-11-19 | Canon Kabushiki Kaisha | Film forming apparatus capable of preventing adhesion of film deposits |
US4857382A (en) | 1988-04-26 | 1989-08-15 | General Electric Company | Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides |
US4949848A (en) | 1988-04-29 | 1990-08-21 | Fluoroware, Inc. | Wafer carrier |
US5407867A (en) | 1988-05-12 | 1995-04-18 | Mitsubishki Denki Kabushiki Kaisha | Method of forming a thin film on surface of semiconductor substrate |
US5174881A (en) | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
JPH01296613A (en) | 1988-05-25 | 1989-11-30 | Nec Corp | Method of vapor growth of iii-v compound semiconductor |
JPH01307229A (en) | 1988-06-06 | 1989-12-12 | Canon Inc | Deposition film forming method |
JPH01313954A (en) | 1988-06-14 | 1989-12-19 | Fujitsu Ltd | Static chuck |
US5097890A (en) | 1988-06-16 | 1992-03-24 | Tel Sagami Limited | Heat treating apparatus with cooling fluid nozzles |
US5178682A (en) | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
US4958061A (en) | 1988-06-27 | 1990-09-18 | Tokyo Electron Limited | Method and apparatus for heat-treating a substrate |
US5064337A (en) | 1988-07-19 | 1991-11-12 | Tokyo Electron Limited | Handling apparatus for transferring carriers and a method of transferring carriers |
US5125358A (en) | 1988-07-26 | 1992-06-30 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
US4989992A (en) | 1988-07-29 | 1991-02-05 | Pomini Farrel S.P.A. | Device for measuring the temperature of the material contained in a closed apparatus |
US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
US5158128A (en) | 1988-09-01 | 1992-10-27 | Sumitec, Inc. | Thermocouple for a continuous casting machine |
US4956538A (en) | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
JPH0293071A (en) | 1988-09-29 | 1990-04-03 | Toshiba Corp | Thin film formation |
WO1990004045A1 (en) | 1988-10-14 | 1990-04-19 | Advantage Production Technology Inc. | Semiconductor wafer processing method and apparatus |
US4985114A (en) | 1988-10-14 | 1991-01-15 | Hitachi, Ltd. | Dry etching by alternately etching and depositing |
US5107170A (en) | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
US4837185A (en) | 1988-10-26 | 1989-06-06 | Intel Corporation | Pulsed dual radio frequency CVD process |
DE3836696C1 (en) | 1988-10-28 | 1989-12-07 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Lock for transporting material between clean rooms |
US4962063A (en) | 1988-11-10 | 1990-10-09 | Applied Materials, Inc. | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing |
US5119760A (en) | 1988-12-27 | 1992-06-09 | Symetrix Corporation | Methods and apparatus for material deposition |
US5084126A (en) | 1988-12-29 | 1992-01-28 | Texas Instruments Incorporated | Method and apparatus for uniform flow distribution in plasma reactors |
USD320148S (en) | 1988-12-30 | 1991-09-24 | Andrews Edward A | Drill socket |
JPH02185038A (en) | 1989-01-11 | 1990-07-19 | Nec Corp | Thermal treatment equipment |
US5074017A (en) | 1989-01-13 | 1991-12-24 | Toshiba Ceramics Co., Ltd. | Susceptor |
US5279986A (en) | 1989-02-03 | 1994-01-18 | Applied Materials, Inc. | Method for epitaxial deposition |
US5114683A (en) | 1989-02-13 | 1992-05-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Thermal decomposition trap |
JPH02217469A (en) | 1989-02-17 | 1990-08-30 | Hitachi Ltd | Formation of thin film and forming device |
DE8902307U1 (en) | 1989-02-27 | 1989-08-31 | Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried | Device for thermal treatment of semiconductor materials |
US5053247A (en) | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
US5294572A (en) | 1989-03-06 | 1994-03-15 | Asm International N.V. | Method and apparatus for depositing a layer on a substrate |
US5088444A (en) | 1989-03-15 | 1992-02-18 | Kabushiki Kaisha Toshiba | Vapor deposition system |
US4934831A (en) | 1989-03-20 | 1990-06-19 | Claud S. Gordon Company | Temperature sensing device |
US5186120A (en) | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
US5151296A (en) | 1989-03-31 | 1992-09-29 | Canon Kk | Method for forming polycrystalline film by chemical vapor deposition process |
US5354433A (en) | 1989-04-09 | 1994-10-11 | Asm International N.V. | Method for producing a flow of triisobutylaluminum from liquid triisobutylaluminum containing isobutene |
US4920918A (en) | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
US4963506A (en) | 1989-04-24 | 1990-10-16 | Motorola Inc. | Selective deposition of amorphous and polycrystalline silicon |
US5117121A (en) | 1989-04-25 | 1992-05-26 | Toto Ltd. | Method of and apparatus for applying voltage to electrostatic chuck |
US5098638A (en) | 1989-04-25 | 1992-03-24 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor device |
US5192717A (en) | 1989-04-28 | 1993-03-09 | Canon Kabushiki Kaisha | Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method |
US5360269A (en) | 1989-05-10 | 1994-11-01 | Tokyo Kogyo Kabushiki Kaisha | Immersion-type temperature measuring apparatus using thermocouple |
US4987856A (en) | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
US5313061A (en) | 1989-06-06 | 1994-05-17 | Viking Instrument | Miniaturized mass spectrometer system |
US5134965A (en) | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5061083A (en) | 1989-06-19 | 1991-10-29 | The United States Of America As Represented By The Department Of Energy | Temperature monitoring device and thermocouple assembly therefor |
JPH0344472A (en) | 1989-07-11 | 1991-02-26 | Seiko Epson Corp | Production of plasma thin film |
US5022961A (en) | 1989-07-26 | 1991-06-11 | Dainippon Screen Mfg. Co., Ltd. | Method for removing a film on a silicon layer surface |
US5022961B1 (en) | 1989-07-26 | 1997-05-27 | Dainippon Screen Mfg | Method for removing a film on a silicon layer surface |
US5060322A (en) | 1989-07-27 | 1991-10-29 | Delepine Jean C | Shower room and ceiling element, especially for a shower room |
US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
US5124272A (en) | 1989-08-11 | 1992-06-23 | Seiko Instruments, Inc. | Method of producing field effect transistor |
US5213650A (en) | 1989-08-25 | 1993-05-25 | Applied Materials, Inc. | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
WO1991004522A1 (en) | 1989-09-12 | 1991-04-04 | Aitec Oy | Synchronized teaching of a robot cell |
US5057436A (en) | 1989-10-02 | 1991-10-15 | Agmaster, Inc. | Method and apparatus for detecting toxic gases |
US5180273A (en) | 1989-10-09 | 1993-01-19 | Kabushiki Kaisha Toshiba | Apparatus for transferring semiconductor wafers |
US5098865A (en) | 1989-11-02 | 1992-03-24 | Machado Jose R | High step coverage silicon oxide thin films |
US5167761A (en) | 1989-11-03 | 1992-12-01 | Asm International N.V. | Method for halide etching in the presence of water of semi-conductor substrates |
WO1991006975A1 (en) | 1989-11-03 | 1991-05-16 | Asm International N.V. | Method for halide etching in the presence of water of semi-conductor substrates |
JPH03155625A (en) | 1989-11-14 | 1991-07-03 | Seiko Epson Corp | Manufacture of plasma cvd film |
US5181779A (en) | 1989-11-22 | 1993-01-26 | Nippon Steel Corporation | Thermocouple temperature sensor and a method of measuring the temperature of molten iron |
US5002632A (en) | 1989-11-22 | 1991-03-26 | Texas Instruments Incorporated | Method and apparatus for etching semiconductor materials |
US4987102A (en) | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
RU1786406C (en) | 1989-12-12 | 1993-01-07 | Научно-Техническое Кооперативное Предприятие "Акцент" | Method and device for flaw detection of planar reflective surfaces |
USD333606S (en) | 1989-12-12 | 1993-03-02 | Kabushiki Kaisha Kanemitsu | Pulley |
US5226713A (en) | 1989-12-28 | 1993-07-13 | Ebara Corporation | Storage vessel |
JPH03211753A (en) | 1990-01-16 | 1991-09-17 | Fujitsu Ltd | Semiconductor manufacturimg device |
US5279886A (en) | 1990-01-25 | 1994-01-18 | Ngk Spark Plug Co., Ltd. | Alumina sintered body |
USD330900S (en) | 1990-02-08 | 1992-11-10 | Wakegijig William M | Drill adapter |
JPH03248427A (en) | 1990-02-26 | 1991-11-06 | Nec Corp | Manufacture of semiconductor device |
US5110407A (en) | 1990-03-07 | 1992-05-05 | Hitachi, Ltd. | Surface fabricating device |
US5108192A (en) | 1990-03-07 | 1992-04-28 | Paul Wurth S.A. | Probe for taking gas samples and heat measurements in a shaft furnace |
US5474612A (en) | 1990-03-19 | 1995-12-12 | Kabushiki Kaisha Toshiba | Vapor-phase deposition apparatus and vapor-phase deposition method |
US5288684A (en) | 1990-03-27 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction |
US5310410A (en) | 1990-04-06 | 1994-05-10 | Sputtered Films, Inc. | Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus |
US5422139A (en) | 1990-04-12 | 1995-06-06 | Balzers Aktiengesellschaft | Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method |
US5243202A (en) | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5356672A (en) | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
US5284519A (en) | 1990-05-16 | 1994-02-08 | Simon Fraser University | Inverted diffuser stagnation point flow reactor for vapor deposition of thin films |
JPH0429313A (en) | 1990-05-24 | 1992-01-31 | Fujitsu Ltd | Device for producing semiconductor crystal |
US5130003A (en) | 1990-06-14 | 1992-07-14 | Conrad Richard H | method of powering corona discharge in ozone generators |
US5393577A (en) | 1990-06-19 | 1995-02-28 | Nec Corporation | Method for forming a patterned layer by selective chemical vapor deposition |
US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
US5281274A (en) | 1990-06-22 | 1994-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors |
WO1992000477A1 (en) | 1990-06-25 | 1992-01-09 | Asm International N.V. (Amtc) | Three-way valve |
US5178639A (en) | 1990-06-28 | 1993-01-12 | Tokyo Electron Sagami Limited | Vertical heat-treating apparatus |
US5176451A (en) | 1990-07-02 | 1993-01-05 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor |
US5362328A (en) | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
US5314570A (en) | 1990-07-18 | 1994-05-24 | Sumitomo Electric Industries Ltd. | Process and apparatus for the production of diamond |
US5310456A (en) | 1990-07-30 | 1994-05-10 | Sony Corporation | Dry etching method |
US5231062A (en) | 1990-08-09 | 1993-07-27 | Minnesota Mining And Manufacturing Company | Transparent aluminum oxynitride-based ceramic article |
US5082517A (en) | 1990-08-23 | 1992-01-21 | Texas Instruments Incorporated | Plasma density controller for semiconductor device processing equipment |
JPH04115531A (en) | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | Chemical vapor growth device |
US5273609A (en) | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
US5261167A (en) | 1990-09-27 | 1993-11-16 | Tokyo Electron Sagami Limited | Vertical heat treating apparatus |
US5167716A (en) | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
US5315092A (en) | 1990-10-11 | 1994-05-24 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such apparatus |
US5306946A (en) | 1990-10-15 | 1994-04-26 | Seiko Epson Corporation | Semiconductor device having a passivation layer with silicon nitride layers |
US5397395A (en) | 1990-10-29 | 1995-03-14 | Canon Kabushiki Kaisha | Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same |
US5228114A (en) | 1990-10-30 | 1993-07-13 | Tokyo Electron Sagami Limited | Heat-treating apparatus with batch scheme having improved heat controlling capability |
US5851299A (en) | 1990-12-05 | 1998-12-22 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5855687A (en) | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
US5252133A (en) | 1990-12-19 | 1993-10-12 | Kabushiki Kaisha Toshiba | Vertically oriented CVD apparatus including gas inlet tube having gas injection holes |
US5071258A (en) | 1991-02-01 | 1991-12-10 | Vesuvius Crucible Company | Thermocouple assembly |
EP0499004A1 (en) | 1991-02-15 | 1992-08-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Process for manufacturing fiber reinforced ceramic materials by chemical vapor infiltration |
US5278494A (en) | 1991-02-19 | 1994-01-11 | Tokyo Electron Yamanashi Limited | Wafer probing test machine |
US6110531A (en) | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
US5266526A (en) | 1991-03-19 | 1993-11-30 | Kabushiki Kaisha Toshiba | Method of forming trench buried wiring for semiconductor device |
US5340261A (en) | 1991-03-26 | 1994-08-23 | Tokyo Electron Limited | Load-lock unit and wafer transfer system |
US5328360A (en) | 1991-04-03 | 1994-07-12 | Tokyo Election Sagami Kabushiki Kaisha | Heat-treating apparatus |
US5242539A (en) | 1991-04-04 | 1993-09-07 | Hitachi, Ltd. | Plasma treatment method and apparatus |
US5683561A (en) | 1991-04-04 | 1997-11-04 | Conner Peripherals, Inc. | Apparatus and method for high throughput sputtering |
US5182232A (en) | 1991-04-08 | 1993-01-26 | Micron Technology, Inc. | Metal silicide texturizing technique |
US5116018A (en) | 1991-04-12 | 1992-05-26 | Automax, Inc. | Lockout modules |
US5314538A (en) | 1991-04-22 | 1994-05-24 | Semiconductor Process Laboratory | Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device |
US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
US5125710A (en) | 1991-05-14 | 1992-06-30 | Angelo Gianelo | Under-platform drawer for trucks |
US5565038A (en) | 1991-05-16 | 1996-10-15 | Intel Corporation | Interhalogen cleaning of process equipment |
US5104514A (en) | 1991-05-16 | 1992-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Protective coating system for aluminum |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US5193969A (en) | 1991-05-20 | 1993-03-16 | Fortrend Engineering Corporation | Wafer transfer machine |
US5234526A (en) | 1991-05-24 | 1993-08-10 | Lam Research Corporation | Window for microwave plasma processing device |
US5252134A (en) | 1991-05-31 | 1993-10-12 | Stauffer Craig M | Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing |
US5443646A (en) | 1991-06-04 | 1995-08-22 | Matsushita Research Institute Tokyo, Inc. | Method and apparatus for forming thin film and multilayer film |
US5249960A (en) | 1991-06-14 | 1993-10-05 | Tokyo Electron Sagami Kabushiki Kaisha | Forced cooling apparatus for heat treatment apparatus |
JPH056880A (en) | 1991-06-27 | 1993-01-14 | Toshiba Corp | Surface treatment method |
US6095083A (en) | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
US5308650A (en) | 1991-07-06 | 1994-05-03 | Schott Glaswerke | Process and apparatus for the ignition of CVD plasmas |
US5298089A (en) | 1991-07-08 | 1994-03-29 | Air Products And Chemicals, Inc. | In-situ generation of heat treating atmospheres using non-cryogenically produced nitrogen |
JPH0523079A (en) | 1991-07-19 | 1993-02-02 | Shimano Inc | Fishing rod and production thereof |
US5277932A (en) | 1991-07-29 | 1994-01-11 | Syracuse University | CVD method for forming metal boride films using metal borane cluster compounds |
US5250092A (en) | 1991-08-22 | 1993-10-05 | Nec Corporation | Exhaust apparatus for epitaxial growth system |
US5137286A (en) | 1991-08-23 | 1992-08-11 | General Electric Company | Permanent magnet floating shaft seal |
US5335309A (en) | 1991-08-29 | 1994-08-02 | Matsushita Electric Industrial Co., Ltd. | Light-beam heating apparatus |
US5246500A (en) | 1991-09-05 | 1993-09-21 | Kabushiki Kaisha Toshiba | Vapor phase epitaxial growth apparatus |
US5294778A (en) | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
US5154301A (en) | 1991-09-12 | 1992-10-13 | Fluoroware, Inc. | Wafer carrier |
US5308788A (en) | 1991-09-13 | 1994-05-03 | Motorola, Inc. | Temperature controlled process for the epitaxial growth of a film of material |
US5430011A (en) | 1991-09-17 | 1995-07-04 | Sumitomi Electric Industries, Ltd. | Crystal compensated superconducting thin film formed of oxide superconductor material |
US5232508A (en) | 1991-10-07 | 1993-08-03 | Commissariat A L'energie Atomique | Gaseous phase chemical treatment reactor |
US5219226A (en) | 1991-10-25 | 1993-06-15 | Quadtek, Inc. | Imaging and temperature monitoring system |
JPH05118928A (en) | 1991-10-25 | 1993-05-14 | Tokyo Electron Ltd | Contact type temperature measuring method |
US5387265A (en) | 1991-10-29 | 1995-02-07 | Kokusai Electric Co., Ltd. | Semiconductor wafer reaction furnace with wafer transfer means |
US5193912A (en) | 1991-11-18 | 1993-03-16 | Saunders Roger I | Probe for sensing and measuring temperature |
JP3140111B2 (en) | 1991-11-19 | 2001-03-05 | オリンパス光学工業株式会社 | High magnification microscope objective |
US5199603A (en) | 1991-11-26 | 1993-04-06 | Prescott Norman F | Delivery system for organometallic compounds |
JPH05171446A (en) | 1991-12-24 | 1993-07-09 | Furukawa Electric Co Ltd:The | Formation of thin film |
EP0550058A2 (en) | 1991-12-30 | 1993-07-07 | Texas Instruments Incorporated | A programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5414221A (en) | 1991-12-31 | 1995-05-09 | Intel Corporation | Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias |
US5443686A (en) | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
US5364667A (en) | 1992-01-17 | 1994-11-15 | Amtech Systems, Inc. | Photo-assisted chemical vapor deposition method |
US6379466B1 (en) | 1992-01-17 | 2002-04-30 | Applied Materials, Inc. | Temperature controlled gas distribution plate |
US5480818A (en) | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
JPH0684888A (en) | 1992-02-27 | 1994-03-25 | G T C:Kk | Formation of insulation film |
US5208961A (en) | 1992-02-28 | 1993-05-11 | National Semiconductor Corporation | Semiconductor processing furnace door alignment apparatus and method |
US5407449A (en) | 1992-03-10 | 1995-04-18 | Asm International N.V. | Device for treating micro-circuit wafers |
US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
US5728425A (en) | 1992-03-18 | 1998-03-17 | Fujitsu Limited | Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films |
US5897710A (en) | 1992-03-27 | 1999-04-27 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
US5320218A (en) | 1992-04-07 | 1994-06-14 | Shinko Electric Co., Ltd. | Closed container to be used in a clean room |
JPH05291142A (en) | 1992-04-15 | 1993-11-05 | Nec Corp | Liquid source supplying equipment |
US5268989A (en) | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
US5336327A (en) | 1992-06-01 | 1994-08-09 | Motorola, Inc. | CVD reactor with uniform layer depositing ability |
US5569402A (en) | 1992-06-03 | 1996-10-29 | Esec S.A. | Curing oven for magazine holding computer chip lead frames, providing flow direction control for hot gas stream |
US5461214A (en) | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
US5356478A (en) | 1992-06-22 | 1994-10-18 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma treatment chamber |
US5494494A (en) | 1992-06-24 | 1996-02-27 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing substrates |
JPH0616433A (en) | 1992-06-29 | 1994-01-25 | Matsushita Electric Ind Co Ltd | Die for press-forming optical element |
US5527417A (en) | 1992-07-06 | 1996-06-18 | Kabushiki Kaisha Toshiba | Photo-assisted CVD apparatus |
US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5306666A (en) | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JPH0653210A (en) | 1992-07-28 | 1994-02-25 | Nec Corp | Semiconductor device |
US5621982A (en) | 1992-07-29 | 1997-04-22 | Shinko Electric Co., Ltd. | Electronic substrate processing system using portable closed containers and its equipments |
US5861233A (en) | 1992-07-31 | 1999-01-19 | Canon Kabushiki Kaisha | Pattern forming method by imparting hydrogen atoms and selectively depositing metal film |
US5388945A (en) | 1992-08-04 | 1995-02-14 | International Business Machines Corporation | Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transportable containers |
US5271967A (en) | 1992-08-21 | 1993-12-21 | General Motors Corporation | Method and apparatus for application of thermal spray coatings to engine blocks |
USD363464S (en) | 1992-08-27 | 1995-10-24 | Tokyo Electron Yamanashi Limited | Electrode for a semiconductor processing apparatus |
US5338362A (en) | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5520743A (en) | 1992-09-03 | 1996-05-28 | Tokyo Electron Kabushiki Kaisha | Processing apparatus with means for rotating an object mounting means and a disk body located in the mounting means differently relative to each other |
US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
US5246218A (en) | 1992-09-25 | 1993-09-21 | Intel Corporation | Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment |
US5280894A (en) | 1992-09-30 | 1994-01-25 | Honeywell Inc. | Fixture for backside wafer etching |
US6438502B1 (en) | 1992-10-07 | 2002-08-20 | Dallas Semiconductor Corporation | Environmental condition sensor device and method |
USD354898S (en) | 1992-10-13 | 1995-01-31 | Verdel Innovations | Egg holder for use with a stand for decorating eggs |
JPH06140399A (en) | 1992-10-26 | 1994-05-20 | Nec Corp | Manufacture of metal wire |
US5403630A (en) | 1992-10-27 | 1995-04-04 | Kabushiki Kaisha Toshiba | Vapor-phase growth method for forming S2 O2 films |
US5804505A (en) | 1992-10-27 | 1998-09-08 | Nec Corporation | Method of producing semiconductor device having buried contact structure |
US5480488A (en) | 1992-10-28 | 1996-01-02 | Schott Glaswerke | Apparatus for supplying CVD coating devices |
US5559046A (en) | 1992-10-28 | 1996-09-24 | Matsushita Electronics Corporation | Semiconductor device having a hollow around a gate electrode and a method for producing the same |
US6235858B1 (en) | 1992-10-30 | 2001-05-22 | Ppg Industries Ohio, Inc. | Aminoplast curable film-forming compositions providing films having resistance to acid etching |
US5496408A (en) | 1992-11-20 | 1996-03-05 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for producing compound semiconductor devices |
US5589110A (en) | 1992-11-20 | 1996-12-31 | Mitsubishi Electric Corp | Container for liquid metal organic compound |
US5462899A (en) | 1992-11-30 | 1995-10-31 | Nec Corporation | Chemical vapor deposition method for forming SiO2 |
US5380367A (en) | 1992-12-04 | 1995-01-10 | Cselt - Centro Studi E Laboratori Telecomunicazioni S.P.A. | Vapour generator for chemical vapour deposition systems |
US5382311A (en) | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
US5295777A (en) | 1992-12-23 | 1994-03-22 | Materials Research Corporation | Wafer transport module with rotatable and horizontally extendable wafer holder |
US5527111A (en) | 1992-12-24 | 1996-06-18 | Pruftechnik Dieter Busch Ag | Contact temperature sensor |
US5453124A (en) | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5426137A (en) | 1993-01-05 | 1995-06-20 | Halliburton Company | Method for continuously mixing fluids |
US5478429A (en) | 1993-01-20 | 1995-12-26 | Tokyo Electron Limited | Plasma process apparatus |
US5447294A (en) | 1993-01-21 | 1995-09-05 | Tokyo Electron Limited | Vertical type heat treatment system |
US5820686A (en) | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5709745A (en) | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
US6033215A (en) | 1993-01-27 | 2000-03-07 | Tokyo Electron Limited | Heat treatment apparatus and heat treatment boat |
US5537311A (en) | 1993-01-28 | 1996-07-16 | Applied Materials, Inc. | Apparatus for aligning substrates for loading and unloading using a robot mechanism |
US5464313A (en) | 1993-02-08 | 1995-11-07 | Tokyo Electron Kabushiki Kaisha | Heat treating apparatus |
JPH06319177A (en) | 1993-02-24 | 1994-11-15 | Hewlett Packard Co <Hp> | Adaptive remote control system |
US5421893A (en) | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
US5474410A (en) | 1993-03-14 | 1995-12-12 | Tel-Varian Limited | Multi-chamber system provided with carrier units |
US5852445A (en) | 1993-03-18 | 1998-12-22 | Fujitsu Limited | Method of verifying integrated circuit operation by comparing stored data structures corresponding to integrated circuit logic cells |
US5503875A (en) | 1993-03-18 | 1996-04-02 | Tokyo Electron Limited | Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily |
US5305417A (en) | 1993-03-26 | 1994-04-19 | Texas Instruments Incorporated | Apparatus and method for determining wafer temperature using pyrometry |
US5604410A (en) | 1993-04-05 | 1997-02-18 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh | Method to operate an incoherently emitting radiation source having at least one dielectrically impeded electrode |
US5346961A (en) | 1993-04-07 | 1994-09-13 | Union Carbide Chemicals & Plastics Technology Corporation | Process for crosslinking |
US5443648A (en) | 1993-04-13 | 1995-08-22 | Tokyo Electron Kabushiki Kaisha | Vertical heat treatment apparatus with a rotary holder turning independently of a liner plate |
US5562383A (en) | 1993-04-13 | 1996-10-08 | Tokyo Electron Kabushiki Kaisha | Treatment apparatus |
US5531218A (en) | 1993-04-17 | 1996-07-02 | Messer Griesheim Gmbh | Apparatus for the monitored metering of no into patients' respiratory air |
US5782979A (en) | 1993-04-22 | 1998-07-21 | Mitsubishi Denki Kabushiki Kaisha | Substrate holder for MOCVD |
US5404082A (en) | 1993-04-23 | 1995-04-04 | North American Philips Corporation | High frequency inverter with power-line-controlled frequency modulation |
USD353452S (en) | 1993-04-27 | 1994-12-13 | Groenhoff Larry C | Window adapter for portable box fans |
US5637153A (en) | 1993-04-30 | 1997-06-10 | Tokyo Electron Limited | Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus |
WO1994027315A1 (en) | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
US5584963A (en) | 1993-05-18 | 1996-12-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device manufacturing apparatus and cleaning method for the apparatus |
US5456757A (en) | 1993-05-27 | 1995-10-10 | Applied Materials, Inc. | Susceptor for vapor deposition |
JPH06338497A (en) | 1993-05-28 | 1994-12-06 | Nec Corp | Chemical vapor growth method |
US5501740A (en) | 1993-06-04 | 1996-03-26 | Applied Science And Technology, Inc. | Microwave plasma reactor |
US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
US5616264A (en) | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
US5574247A (en) | 1993-06-21 | 1996-11-12 | Hitachi, Ltd. | CVD reactor apparatus |
US6375312B1 (en) | 1993-06-28 | 2002-04-23 | Canon Kabushiki Kaisha | HEAT GENERATING RESISTOR CONTAINING TaN0.8, SUBSTRATE PROVIDED WITH SAID HEAT GENERATING RESISTOR FOR LIQUID JET HEAD, LIQUID JET HEAD PROVIDED WITH SAID SUBSTRATE, AND LIQUID JET APPARATUS PROVIDED WITH SAID LIQUID JET HEAD |
US5997768A (en) | 1993-06-29 | 1999-12-07 | Ciba Specialty Chemicals Corporation | Pelletization of metal soap powders |
US5484484A (en) | 1993-07-03 | 1996-01-16 | Tokyo Electron Kabushiki | Thermal processing method and apparatus therefor |
EP0634785A1 (en) | 1993-07-13 | 1995-01-18 | Applied Materials, Inc. | Improved susceptor design |
JPH0729836A (en) | 1993-07-14 | 1995-01-31 | Sony Corp | Deposition of plasma silicon nitride |
US5312245A (en) | 1993-07-16 | 1994-05-17 | International Business Machines Corporation | Particulate trap for vertical furnace |
JPH0734936A (en) | 1993-07-16 | 1995-02-03 | Hitachi Ltd | Diagnostic device of engine system |
US5540821A (en) | 1993-07-16 | 1996-07-30 | Applied Materials, Inc. | Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing |
US5415753A (en) | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5350480A (en) | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
FR2708624A1 (en) | 1993-07-30 | 1995-02-10 | Neuville Stephane | Process for deposition of a protective coating based on amorphous diamond pseudocarbon or on modified silicon carbide |
US5348774A (en) | 1993-08-11 | 1994-09-20 | Alliedsignal Inc. | Method of rapidly densifying a porous structure |
JPH0766267A (en) | 1993-08-27 | 1995-03-10 | Kokusai Electric Co Ltd | Wafer cassette loading-unloading equipment |
US5602060A (en) | 1993-08-31 | 1997-02-11 | Fujitsu Limited | Process for the production of semiconductor devices |
JPH0774162A (en) | 1993-08-31 | 1995-03-17 | Semiconductor Energy Lab Co Ltd | Apparatus and method for vapor phase reaction |
US5418382A (en) | 1993-09-23 | 1995-05-23 | Fsi International, Inc. | Substrate location and detection apparatus |
US5494439A (en) | 1993-09-29 | 1996-02-27 | Intel Corporation | Si/SiC composite material and method for making Si/SiC composite material |
US5556275A (en) | 1993-09-30 | 1996-09-17 | Tokyo Electron Limited | Heat treatment apparatus |
US5378501A (en) | 1993-10-05 | 1995-01-03 | Foster; Robert F. | Method for chemical vapor deposition of titanium nitride films at low temperatures |
JPH07109576A (en) | 1993-10-07 | 1995-04-25 | Shinko Seiki Co Ltd | Formation of film by plasma cvd |
US6122036A (en) | 1993-10-21 | 2000-09-19 | Nikon Corporation | Projection exposure apparatus and method |
US5482559A (en) | 1993-10-21 | 1996-01-09 | Tokyo Electron Kabushiki Kaisha | Heat treatment boat |
US5790750A (en) | 1993-10-29 | 1998-08-04 | Applied Materials, Inc. | Profiled substrate heating utilizing a support temperature and a substrate temperature |
US5523616A (en) | 1993-10-29 | 1996-06-04 | Nec Corporation | Semiconductor device having laminated tight and coarse insulating layers |
US5562952A (en) | 1993-11-11 | 1996-10-08 | Nissin Electric Co., Ltd. | Plasma-CVD method and apparatus |
US5413813A (en) | 1993-11-23 | 1995-05-09 | Enichem S.P.A. | CVD of silicon-based ceramic materials on internal surface of a reactor |
US5463176A (en) | 1994-01-03 | 1995-10-31 | Eckert; C. Edward | Liquid waste oxygenation |
JPH07209093A (en) | 1994-01-20 | 1995-08-11 | Tokyo Electron Ltd | Thermometer |
US5616947A (en) | 1994-02-01 | 1997-04-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an MIS structure |
US5681779A (en) | 1994-02-04 | 1997-10-28 | Lsi Logic Corporation | Method of doping metal layers for electromigration resistance |
JPH07225214A (en) | 1994-02-14 | 1995-08-22 | Shimadzu Corp | Nox measuring apparatus |
US6610375B2 (en) | 1994-02-15 | 2003-08-26 | Japan Atomic Energy Research Institute | Plasma facing components of nuclear fusion reactors employing tungsten materials |
US6261648B1 (en) | 1994-02-15 | 2001-07-17 | Japan Atomic Energy Research Institute | Plasma facing components of nuclear fusion reactors employing tungsten materials |
US5766365A (en) | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US5645646A (en) | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5540059A (en) | 1994-02-28 | 1996-07-30 | Shin-Etsu Quartz Products Co., Ltd. | Method and apparatus for supplying gaseous raw material |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
JPH07272694A (en) | 1994-03-30 | 1995-10-20 | Ushio Inc | Dielectric barrier discharge fluorescent lamp |
JPH07283149A (en) | 1994-04-04 | 1995-10-27 | Nissin Electric Co Ltd | Thin film vapor growth device |
US5685914A (en) | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
US20040026372A1 (en) | 1994-04-20 | 2004-02-12 | Tokyo Electron Limited | Plasma treatment method and apparatus |
EP0678909A1 (en) | 1994-04-20 | 1995-10-25 | STMicroelectronics S.r.l. | Monitoring of rf-plasma induced potential on a gate dielectric inside a plasma etcher |
JPH07297271A (en) | 1994-04-22 | 1995-11-10 | Shinko Electric Co Ltd | Support mechanism for supporting wafer cassettes with different sizes arbitrarily |
US5431734A (en) | 1994-04-28 | 1995-07-11 | International Business Machines Corporation | Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control |
US6447232B1 (en) | 1994-04-28 | 2002-09-10 | Semitool, Inc. | Semiconductor wafer processing apparatus having improved wafer input/output handling system |
US5665608A (en) | 1994-04-28 | 1997-09-09 | International Business Machines Corporation | Method of aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control |
US5720927A (en) | 1994-04-29 | 1998-02-24 | Motorola, Inc. | Apparatus for decomposition of chemical compounds |
US5456207A (en) | 1994-05-16 | 1995-10-10 | The United States Of America As Represented By The Secretary Of The Navy | Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials |
US5775889A (en) | 1994-05-17 | 1998-07-07 | Tokyo Electron Limited | Heat treatment process for preventing slips in semiconductor wafers |
US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
US5730802A (en) | 1994-05-20 | 1998-03-24 | Sharp Kabushiki Kaisha | Vapor growth apparatus and vapor growth method capable of growing good productivity |
US5769952A (en) | 1994-06-07 | 1998-06-23 | Tokyo Electron, Ltd. | Reduced pressure and normal pressure treatment apparatus |
US5998870A (en) | 1994-06-10 | 1999-12-07 | Samsung Electronics Co., Ltd. | Wiring structure of semiconductor device and method for manufacturing the same |
US5871586A (en) | 1994-06-14 | 1999-02-16 | T. Swan & Co. Limited | Chemical vapor deposition |
US6017779A (en) | 1994-06-15 | 2000-01-25 | Seiko Epson Corporation | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
US5518780A (en) | 1994-06-16 | 1996-05-21 | Ford Motor Company | Method of making hard, transparent amorphous hydrogenated boron nitride films |
US5423942A (en) | 1994-06-20 | 1995-06-13 | Texas Instruments Incorporated | Method and apparatus for reducing etching erosion in a plasma containment tube |
US5504042A (en) | 1994-06-23 | 1996-04-02 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
US6140252A (en) | 1994-06-23 | 2000-10-31 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
US5510277A (en) | 1994-06-29 | 1996-04-23 | At&T Corp. | Surface treatment for silicon substrates |
US5577331A (en) | 1994-06-30 | 1996-11-26 | Nippon Precision Circuits Inc. | Downflow spin dryer |
US5826129A (en) | 1994-06-30 | 1998-10-20 | Tokyo Electron Limited | Substrate processing system |
US20040079960A1 (en) | 1994-08-22 | 2004-04-29 | Rohm Co., Ltd. | Semiconductor light emitting device and method for producing the same |
US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5690742A (en) | 1994-09-06 | 1997-11-25 | Komatsu Electronic Metals Co., Ltd. | Susceptor for an epitaxial growth apparatus |
US6045260A (en) | 1994-09-27 | 2000-04-04 | Rosemount Inc. | Switch for selectively coupling a sensor or calibration element to a terminal block |
US5862302A (en) | 1994-09-28 | 1999-01-19 | Tokyo Electron Limited | Thermal processing apparatus having a reaction tube with transparent and opaque portions |
US5877095A (en) | 1994-09-30 | 1999-03-02 | Nippondenso Co., Ltd. | Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen |
US5514439A (en) | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
US5939886A (en) | 1994-10-24 | 1999-08-17 | Advanced Energy Industries, Inc. | Plasma monitoring and control method and system |
US5576629A (en) | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
US5827435A (en) | 1994-10-27 | 1998-10-27 | Nec Corporation | Plasma processing method and equipment used therefor |
US5819092A (en) | 1994-11-08 | 1998-10-06 | Vermeer Technologies, Inc. | Online service development tool with fee setting capabilities |
US5562947A (en) | 1994-11-09 | 1996-10-08 | Sony Corporation | Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment |
US6143129A (en) | 1994-11-15 | 2000-11-07 | Mattson Technology, Inc. | Inductive plasma reactor |
US5583736A (en) | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
US20020041931A1 (en) | 1994-11-28 | 2002-04-11 | Tuomo Suntola | Method for growing thin films |
US5711811A (en) | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
WO1996017107A1 (en) | 1994-11-28 | 1996-06-06 | Mikrokemia Oy | Method and apparatus for growing thin films |
US5855680A (en) | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
JPH08181135A (en) | 1994-12-22 | 1996-07-12 | Sharp Corp | Manufacture of semiconductor device |
US6096133A (en) | 1994-12-28 | 2000-08-01 | Mitsubishi Denki Kabushiki Kaisha | Chemical vapor deposition apparatus |
US5716133A (en) | 1995-01-17 | 1998-02-10 | Applied Komatsu Technology, Inc. | Shielded heat sensor for measuring temperature |
US5586585A (en) | 1995-02-27 | 1996-12-24 | Asyst Technologies, Inc. | Direct loadlock interface |
US5718574A (en) | 1995-03-01 | 1998-02-17 | Tokyo Electron Limited | Heat treatment apparatus |
US6004204A (en) | 1995-03-10 | 1999-12-21 | Luminis Pty Ltd. | Induction nozzle and arrangement |
US5662470A (en) | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
US5595606A (en) | 1995-04-20 | 1997-01-21 | Tokyo Electron Limited | Shower head and film forming apparatus using the same |
US5852879A (en) | 1995-04-26 | 1998-12-29 | Schumaier; Daniel R. | Moisture sensitive item drying appliance |
US6482663B1 (en) | 1995-04-27 | 2002-11-19 | Telefonaktiebolaget Lm Ericsson (Publ) | Silicon substrate having a recess for receiving an element, and a method of producing such a recess |
US6090659A (en) | 1995-04-28 | 2000-07-18 | International Business Machines Corporation | Lead silicate based capacitor structures |
US5661263A (en) | 1995-05-10 | 1997-08-26 | Phaeton, Llc | Surface raceway and method |
US6104002A (en) | 1995-05-12 | 2000-08-15 | Tokyo Electron Limited | Heat treating apparatus |
US5897378A (en) | 1995-05-17 | 1999-04-27 | Matsushita Electric Industrial Co., Ltd. | Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor manufacturing apparatus |
US5761328A (en) | 1995-05-22 | 1998-06-02 | Solberg Creations, Inc. | Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements |
US5708825A (en) | 1995-05-26 | 1998-01-13 | Iconovex Corporation | Automatic summary page creation and hyperlink generation |
US5698036A (en) | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
US5540898A (en) | 1995-05-26 | 1996-07-30 | Vasogen Inc. | Ozone generator with in-line ozone sensor |
US5663899A (en) | 1995-06-05 | 1997-09-02 | Advanced Micro Devices | Redundant thermocouple |
US6190634B1 (en) | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials |
US5982931A (en) | 1995-06-07 | 1999-11-09 | Ishimaru; Mikio | Apparatus and method for the manipulation of image containing documents |
US5683517A (en) | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Plasma reactor with programmable reactant gas distribution |
US5972196A (en) | 1995-06-07 | 1999-10-26 | Lynntech, Inc. | Electrochemical production of ozone and hydrogen peroxide |
JPH08335558A (en) | 1995-06-08 | 1996-12-17 | Nissin Electric Co Ltd | Thin film vapor phase deposition apparatus |
US5728223A (en) | 1995-06-09 | 1998-03-17 | Ebara Corporation | Reactant gas ejector head and thin-film vapor deposition apparatus |
US6014677A (en) | 1995-06-12 | 2000-01-11 | Fuji Xerox Co., Ltd. | Document management device and method for managing documents by utilizing additive information |
US5685912A (en) | 1995-06-20 | 1997-11-11 | Sony Corporation | Pressure control system for semiconductor manufacturing equipment |
USD392855S (en) | 1995-06-26 | 1998-03-31 | Pillow Daryl R | Floor protection template for use while spray-painting door frames |
US20020114886A1 (en) | 1995-07-06 | 2002-08-22 | Applied Materials, Inc. | Method of tisin deposition using a chemical vapor deposition process |
US20020001976A1 (en) | 1995-07-06 | 2002-01-03 | Michal Danek | Chamber for constructing a film on a semiconductor wafer |
WO1997003223A1 (en) | 1995-07-10 | 1997-01-30 | Watkins Johnson Company | Gas distribution apparatus |
US6178918B1 (en) | 1995-07-10 | 2001-01-30 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor |
US5792272A (en) | 1995-07-10 | 1998-08-11 | Watkins-Johnson Company | Plasma enhanced chemical processing reactor and method |
US6375750B1 (en) | 1995-07-10 | 2002-04-23 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor and method |
US6001267A (en) | 1995-07-10 | 1999-12-14 | Watkins-Johnson Company | Plasma enchanced chemical method |
US5670786A (en) | 1995-07-18 | 1997-09-23 | Uvp, Inc. | Multiple wavelength light source |
US5855726A (en) | 1995-07-19 | 1999-01-05 | Hitachi, Ltd. | Vacuum processing apparatus and semiconductor manufacturing line using the same |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US6030900A (en) | 1995-08-04 | 2000-02-29 | Siemens Aktiengesellschaft | Process for generating a space in a structure |
US5979506A (en) | 1995-08-16 | 1999-11-09 | Aker Engineering As | Arrangement in a pipe bundle |
JPH0964149A (en) | 1995-08-29 | 1997-03-07 | Hitachi Electron Eng Co Ltd | Semiconductor production device |
US6053982A (en) | 1995-09-01 | 2000-04-25 | Asm America, Inc. | Wafer support system |
US6692576B2 (en) | 1995-09-01 | 2004-02-17 | Asm America, Inc. | Wafer support system |
US5813851A (en) | 1995-09-07 | 1998-09-29 | Tokyo Electron, Ltd. | Heat treatment method |
US20040127069A1 (en) | 1995-09-08 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. A Japan Corporation | Method and apparatus for manufacturing a semiconductor device |
US5791782A (en) | 1995-09-21 | 1998-08-11 | Fusion Systems Corporation | Contact temperature probe with unrestrained orientation |
JPH0989676A (en) | 1995-09-21 | 1997-04-04 | Casio Comput Co Ltd | Electronic clinical thermometer |
US6000732A (en) | 1995-09-22 | 1999-12-14 | Jenoptik Ag | Arrangement for locking and unlocking a door of a container |
US5611448A (en) | 1995-09-25 | 1997-03-18 | United Microelectronics Corporation | Wafer container |
US5997588A (en) | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5992453A (en) | 1995-10-17 | 1999-11-30 | Zimmer; Johannes | Flow-dividing arrangement |
US5851294A (en) | 1995-10-23 | 1998-12-22 | Watkins-Johnson Company | Gas injection system for semiconductor processing |
US5801104A (en) | 1995-10-24 | 1998-09-01 | Micron Technology, Inc. | Uniform dielectric film deposition on textured surfaces |
US6158941A (en) | 1995-10-27 | 2000-12-12 | Brooks Automation, Inc. | Substrate transport apparatus with double substrate holders |
US5853484A (en) | 1995-10-28 | 1998-12-29 | Lg Semicon Co., Ltd. | Gas distribution system and method for chemical vapor deposition apparatus |
US6350391B1 (en) | 1995-11-09 | 2002-02-26 | Oramir Semiconductor Equipment Ltd. | Laser stripping improvement by modified gas composition |
US6152669A (en) | 1995-11-13 | 2000-11-28 | Shinko Electric Co., Ltd. | Mechanical interface apparatus |
US5736314A (en) | 1995-11-16 | 1998-04-07 | Microfab Technologies, Inc. | Inline thermo-cycler |
JPH09148322A (en) | 1995-11-22 | 1997-06-06 | Sharp Corp | Method for forming silicon oxide film and plasma cvd film forming apparatus |
US5796074A (en) | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
US5768125A (en) | 1995-12-08 | 1998-06-16 | Asm International N.V. | Apparatus for transferring a substantially circular article |
US5584936A (en) | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
US5777838A (en) | 1995-12-19 | 1998-07-07 | Fujitsu Limited | Electrostatic chuck and method of attracting wafer |
US5954375A (en) | 1995-12-21 | 1999-09-21 | Edstrom Industries, Inc. | Sanitary fitting having ferrule with grooved undercut |
US5697706A (en) | 1995-12-26 | 1997-12-16 | Chrysler Corporation | Multi-point temperature probe |
US6194037B1 (en) | 1995-12-28 | 2001-02-27 | Kokusai Electric Co., Ltd. | Method of plasma processing a substrate placed on a substrate table |
US5679215A (en) | 1996-01-02 | 1997-10-21 | Lam Research Corporation | Method of in situ cleaning a vacuum plasma processing chamber |
US5650351A (en) | 1996-01-11 | 1997-07-22 | Vanguard International Semiconductor Company | Method to form a capacitor having multiple pillars for advanced DRAMS |
US5820685A (en) | 1996-01-17 | 1998-10-13 | Applied Materials, Inc. | Wafer support device |
US6017818A (en) | 1996-01-22 | 2000-01-25 | Texas Instruments Incorporated | Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density |
US5754390A (en) | 1996-01-23 | 1998-05-19 | Micron Technology, Inc. | Integrated capacitor bottom electrode for use with conformal dielectric |
US5632919A (en) | 1996-01-25 | 1997-05-27 | T.G.M., Inc. | Temperature controlled insulation system |
US5989342A (en) | 1996-01-30 | 1999-11-23 | Dainippon Screen Mfg, Co., Ltd. | Apparatus for substrate holding |
US6207936B1 (en) | 1996-01-31 | 2001-03-27 | Asm America, Inc. | Model-based predictive control of thermal processing |
US5554557A (en) | 1996-02-02 | 1996-09-10 | Vanguard International Semiconductor Corp. | Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell |
US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
US5732957A (en) | 1996-02-09 | 1998-03-31 | Yu; Chung-Hsiung | Roller skate with auxiliary roller for assisting turning and braking action thereof |
US6077027A (en) | 1996-02-09 | 2000-06-20 | Hitachi, Ltd. | Semiconductor manufacturing apparatus for transferring articles with a bearing-less joint and method for manufacturing semiconductor device |
US20010022215A1 (en) | 1996-02-16 | 2001-09-20 | Donohoe Kevin G. | Apparatus and method for improving uniformity in batch processing of semiconductor wafers |
US5695567A (en) | 1996-02-26 | 1997-12-09 | Abb Research Ltd. | Susceptor for a device for epitaxially growing objects and such a device |
US5837320A (en) | 1996-02-27 | 1998-11-17 | The University Of New Mexico | Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands |
US5732744A (en) | 1996-03-08 | 1998-03-31 | Control Systems, Inc. | Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components |
US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
US6180979B1 (en) | 1996-03-12 | 2001-01-30 | Siemens Aktiengesellschaft | Memory cell arrangement with vertical MOS transistors and the production process thereof |
USD411516S (en) | 1996-03-15 | 1999-06-29 | Tokyo Electron Limited | Gas diffusion plate for electrode of semiconductor wafer processing apparatus |
US5732597A (en) | 1996-03-19 | 1998-03-31 | Hughes Electronics | Pre-loaded self-aligning roller nut assembly for standard micrometer spindle and the like |
USD380527S (en) | 1996-03-19 | 1997-07-01 | Cherle Velez | Sink drain shield |
US5653807A (en) | 1996-03-28 | 1997-08-05 | The United States Of America As Represented By The Secretary Of The Air Force | Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy |
US6106678A (en) | 1996-03-29 | 2000-08-22 | Lam Research Corporation | Method of high density plasma CVD gap-filling |
US5851293A (en) | 1996-03-29 | 1998-12-22 | Atmi Ecosys Corporation | Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations |
US5888304A (en) | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
US5667592A (en) | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5863123A (en) | 1996-04-24 | 1999-01-26 | Samsung Electronics Co., Ltd. | Profile thermocouple of a transverse-type diffusion furnace |
US5819434A (en) | 1996-04-25 | 1998-10-13 | Applied Materials, Inc. | Etch enhancement using an improved gas distribution plate |
US20010042594A1 (en) | 1996-05-13 | 2001-11-22 | Shamouil Shamouilian | Process chamber having improved temperature control |
USD386076S (en) | 1996-05-14 | 1997-11-11 | Camco Manufacturing, Inc. | Awning clamp |
US5844683A (en) | 1996-05-22 | 1998-12-01 | Applied Materials, Inc. | Position sensor system for substrate holders |
US5920798A (en) | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
US6001183A (en) | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
US6534133B1 (en) | 1996-06-14 | 2003-03-18 | Research Foundation Of State University Of New York | Methodology for in-situ doping of aluminum coatings |
US5801945A (en) | 1996-06-28 | 1998-09-01 | Lam Research Corporation | Scheduling method for robotic manufacturing processes |
US5779203A (en) | 1996-06-28 | 1998-07-14 | Edlinger; Erich | Adjustable wafer cassette stand |
US6461439B1 (en) | 1996-07-08 | 2002-10-08 | Asm International N.V. | Apparatus for supporting a semiconductor wafer during processing |
US20040087168A1 (en) | 1996-07-08 | 2004-05-06 | Granneman Ernst Hendrik August | Method and apparatus for supporting a semiconductor wafer during processing |
US20050037619A1 (en) | 1996-07-08 | 2005-02-17 | Granneman Ernst Hendrik August | Method and apparatus for supporting a semiconductor wafer during processing |
US5950327A (en) | 1996-07-08 | 1999-09-14 | Speedfam-Ipec Corporation | Methods and apparatus for cleaning and drying wafers |
US5820366A (en) | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
US5937142A (en) | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US6129044A (en) | 1996-07-12 | 2000-10-10 | Applied Materials, Inc. | Apparatus for substrate processing with improved throughput and yield |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5837058A (en) | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
US6102565A (en) | 1996-07-12 | 2000-08-15 | Isuzu Ceramics Research Institute Co., Ltd. | Ceramic sheath type thermocouple |
US5915562A (en) | 1996-07-12 | 1999-06-29 | Fluoroware, Inc. | Transport module with latching door |
US5700729A (en) | 1996-07-15 | 1997-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masked-gate MOS S/D implantation |
US5827757A (en) | 1996-07-16 | 1998-10-27 | Direct Radiography Corp. | Fabrication of large area x-ray image capturing element |
JPH1041096A (en) | 1996-07-19 | 1998-02-13 | Tokyo Electron Ltd | Plasma treatment device |
US6156151A (en) | 1996-07-19 | 2000-12-05 | Tokyo Electron Limited | Plasma processing apparatus |
US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US5879128A (en) | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
US5724748A (en) | 1996-07-24 | 1998-03-10 | Brooks; Ray G. | Apparatus for packaging contaminant-sensitive articles and resulting package |
US5987480A (en) | 1996-07-25 | 1999-11-16 | Donohue; Michael | Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content |
JPH1050635A (en) | 1996-07-29 | 1998-02-20 | Kokusai Electric Co Ltd | Generation of metal thin film and cvd device |
JPH1050800A (en) | 1996-08-05 | 1998-02-20 | Canon Sales Co Inc | Processing system |
US5891251A (en) | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
US5873942A (en) | 1996-08-08 | 1999-02-23 | Samsung Electronics Co., Ltd. | Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps |
US5928426A (en) | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US7682657B2 (en) | 1996-08-16 | 2010-03-23 | Asm International N.V. | Sequential chemical vapor deposition |
US20010028924A1 (en) | 1996-08-16 | 2001-10-11 | Arthur Sherman | Sequential chemical vapor deposition |
US6616986B2 (en) | 1996-08-16 | 2003-09-09 | Asm America Inc. | Sequential chemical vapor deposition |
US6652924B2 (en) | 1996-08-16 | 2003-11-25 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
JPH1064696A (en) | 1996-08-23 | 1998-03-06 | Tokyo Electron Ltd | Plasma processing device |
US6074154A (en) | 1996-08-29 | 2000-06-13 | Tokyo Electron Limited | Substrate treatment system, substrate transfer system, and substrate transfer method |
US5806980A (en) | 1996-09-11 | 1998-09-15 | Novellus Systems, Inc. | Methods and apparatus for measuring temperatures at high potential |
US5857777A (en) | 1996-09-25 | 1999-01-12 | Claud S. Gordon Company | Smart temperature sensing device |
US5880980A (en) | 1996-09-30 | 1999-03-09 | Rockwell International Corporation | Distributed decimation sample rate conversion |
US6048154A (en) | 1996-10-02 | 2000-04-11 | Applied Materials, Inc. | High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock |
USD403949S (en) | 1996-10-03 | 1999-01-12 | Shinagawa Shoko Co., Ltd. | Insulating bushing |
US5950925A (en) | 1996-10-11 | 1999-09-14 | Ebara Corporation | Reactant gas ejector head |
KR19980026850A (en) | 1996-10-11 | 1998-07-15 | 김광호 | Rapid heat treatment equipment with the function of inspecting warpage of wafer |
US6071572A (en) | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US5818716A (en) | 1996-10-18 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Dynamic lot dispatching required turn rate factory control system and method of operation thereof |
US6074443A (en) | 1996-10-21 | 2000-06-13 | Applied Materials, Inc. | Method and apparatus for scheduling wafer processing within a multiple chamber semiconductor wafer processing tool having a multiple blade robot |
US5915200A (en) | 1996-10-30 | 1999-06-22 | Canon Sales Co., Inc. | Film forming method and semiconductor device manufacturing method |
US6073973A (en) | 1996-10-31 | 2000-06-13 | Stanley Aviation Corporation | Lightweight positive lock coupling |
US20020073922A1 (en) | 1996-11-13 | 2002-06-20 | Jonathan Frankel | Chamber liner for high temperature processing chamber |
US6347636B1 (en) | 1996-11-13 | 2002-02-19 | Applied Materials, Inc. | Methods and apparatus for gettering fluorine from chamber material surfaces |
US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US6635115B1 (en) | 1996-11-18 | 2003-10-21 | Applied Materials Inc. | Tandem process chamber |
US6126744A (en) | 1996-11-18 | 2000-10-03 | Asm America, Inc. | Method and system for adjusting semiconductor processing equipment |
JPH10153494A (en) | 1996-11-25 | 1998-06-09 | Yamari Sangyo Kk | Thermocouple |
US5976973A (en) | 1996-11-25 | 1999-11-02 | Fujitsu Ltd. | Method of making a semiconductor device having planarized insulating layer |
US6271320B1 (en) | 1996-11-25 | 2001-08-07 | Basf Aktiengesellschaft | Method for the production of a polymer dispersion by radical aqueous emulsion polymerization with a continuously produced aqueous monomer emulsion |
CN1186873A (en) | 1996-11-26 | 1998-07-08 | 西门子公司 | Distribution plate for reaction chamber with multiple gas inlets and separate mass flow control loops |
US6343239B1 (en) | 1996-11-26 | 2002-01-29 | Nippon Sanso Corporation | Transportation method for substrate wafers and transportation apparatus |
US6025117A (en) | 1996-12-09 | 2000-02-15 | Kabushiki Kaisha Toshiba | Method of forming a pattern using polysilane |
US5753835A (en) | 1996-12-12 | 1998-05-19 | Caterpillar Inc. | Receptacle for holding a sensing device |
US6367410B1 (en) | 1996-12-16 | 2002-04-09 | Applied Materials, Inc. | Closed-loop dome thermal control apparatus for a semiconductor wafer processing system |
US6437444B2 (en) | 1996-12-19 | 2002-08-20 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
US6066204A (en) | 1997-01-08 | 2000-05-23 | Bandwidth Semiconductor, Llc | High pressure MOCVD reactor system |
WO1998032893A2 (en) | 1997-01-23 | 1998-07-30 | Asm America, Inc. | Wafer support system |
US6607602B1 (en) | 1997-01-27 | 2003-08-19 | Asm International N.V. | Device for processing semiconductor wafers |
US5984391A (en) | 1997-02-03 | 1999-11-16 | Novellus Systems, Inc. | Microfeature wafer handling apparatus and methods |
US5836483A (en) | 1997-02-05 | 1998-11-17 | Aerotech Dental Systems, Inc. | Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles |
USRE38937E1 (en) | 1997-02-07 | 2006-01-24 | Sumitomo Mitsubishi Silicon Corporation | Susceptor for vapor-phase growth apparatus |
US5893741A (en) | 1997-02-07 | 1999-04-13 | National Science Council | Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's |
US20020174106A1 (en) | 1997-02-10 | 2002-11-21 | Actioneer, Inc. | Method and apparatus for receiving information in response to a request |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
JPH10227703A (en) | 1997-02-13 | 1998-08-25 | Mitsubishi Heavy Ind Ltd | Heat flux meter |
US6127249A (en) | 1997-02-20 | 2000-10-03 | Micron Technology, Inc. | Metal silicidation methods and methods for using same |
US20030049499A1 (en) | 1997-02-26 | 2003-03-13 | Kyocera Corporation | Ceramic material resistant to halogen plasma and member utilizing the same |
US6447937B1 (en) | 1997-02-26 | 2002-09-10 | Kyocera Corporation | Ceramic materials resistant to halogen plasma and components using the same |
US6916559B2 (en) | 1997-02-26 | 2005-07-12 | Kyocera Corporation | Ceramic material resistant to halogen plasma and member utilizing the same |
US6311016B1 (en) | 1997-02-27 | 2001-10-30 | Sony Corporation | Substrate temperature measuring apparatus, substrate temperature measuring method, substrate heating method and heat treatment apparatus |
US20070148990A1 (en) | 1997-02-27 | 2007-06-28 | Micron Technology, Inc. | Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby |
US20020090735A1 (en) | 1997-02-28 | 2002-07-11 | Extraction Systems, Inc. | Protection of semiconductor fabrication and similar sensitive processes |
US6096267A (en) | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
US6390753B1 (en) | 1997-02-28 | 2002-05-21 | Asm International N.V. | System for loading, processing and unloading substrates arranged on a carrier |
US20020108714A1 (en) | 1997-03-03 | 2002-08-15 | Kenneth Doering | Processing chamber for atomic layer deposition processes |
US5947718A (en) | 1997-03-07 | 1999-09-07 | Semitool, Inc. | Semiconductor processing furnace |
US6213708B1 (en) | 1997-03-12 | 2001-04-10 | Advanced Micro Devices, Inc. | System for sorting multiple semiconductor wafers |
US6328561B1 (en) | 1997-03-14 | 2001-12-11 | Asm International N.V. | Method for cooling a furnace, and furnace provided with a cooling device |
US6054678A (en) | 1997-03-14 | 2000-04-25 | Hakko Corporation | Heater-sensor complex |
US6214122B1 (en) | 1997-03-17 | 2001-04-10 | Motorola, Inc. | Rapid thermal processing susceptor |
US5866795A (en) | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
US6287988B1 (en) | 1997-03-18 | 2001-09-11 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
JPH10261620A (en) | 1997-03-19 | 1998-09-29 | Hitachi Ltd | Surface treater |
US6217662B1 (en) | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
US6139239A (en) | 1997-03-25 | 2000-10-31 | Asm International N.V. | System for transferring wafers from cassettes to furnaces and method |
US6387827B1 (en) | 1997-03-28 | 2002-05-14 | Imec (Vzw) | Method for growing thin silicon oxides on a silicon substrate using chlorine precursors |
US5872065A (en) | 1997-04-02 | 1999-02-16 | Applied Materials Inc. | Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry |
US20030226840A1 (en) | 1997-04-04 | 2003-12-11 | Dalton Robert C. | Electromagnetic susceptors with coatings for artificial dielectric systems and devices |
US6132207A (en) | 1997-04-11 | 2000-10-17 | Asm International N.V. | Discharge system for a reactor, and process system provided with a discharge system of this kind |
US6090442A (en) | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
US6060691A (en) | 1997-04-21 | 2000-05-09 | Fujikin Incorporated | Device for heating fluid controller |
US6029602A (en) | 1997-04-22 | 2000-02-29 | Applied Materials, Inc. | Apparatus and method for efficient and compact remote microwave plasma generation |
US6271148B1 (en) | 1997-04-23 | 2001-08-07 | Applied Materials, Inc. | Method for improved remote microwave plasma source for use with substrate processing system |
US6328864B1 (en) | 1997-04-30 | 2001-12-11 | Tokyo Electron Limited | Vacuum processing apparatus |
US6190113B1 (en) | 1997-04-30 | 2001-02-20 | Applied Materials, Inc. | Quartz pin lift for single wafer chemical vapor deposition/etch process chamber |
US6225602B1 (en) | 1997-05-02 | 2001-05-01 | Advanced Semiconductor Materials International N.V. | Vertical furnace for the treatment of semiconductor substrates |
US6053983A (en) | 1997-05-08 | 2000-04-25 | Tokyo Electron, Ltd. | Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
US5904170A (en) | 1997-05-14 | 1999-05-18 | Applied Materials, Inc. | Pressure flow and concentration control of oxygen/ozone gas mixtures |
US6134807A (en) | 1997-05-16 | 2000-10-24 | Tokyo Electron Limited | Drying processing method and apparatus using same |
US6390754B2 (en) | 1997-05-21 | 2002-05-21 | Tokyo Electron Limited | Wafer processing apparatus, method of operating the same and wafer detecting system |
US20010014267A1 (en) | 1997-05-21 | 2001-08-16 | Kenichi Yamaga | Wafer processing apparatus, method of operating the same and wafer detecting system |
US6124600A (en) | 1997-05-27 | 2000-09-26 | Ushiodenki Kabushiki Kaisha | Ultraviolet irradiation device of the optical path division type |
US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US6217658B1 (en) | 1997-06-03 | 2001-04-17 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing |
US6201999B1 (en) | 1997-06-09 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool |
US6104401A (en) | 1997-06-12 | 2000-08-15 | Netscape Communications Corporation | Link filters |
EP0887632A1 (en) | 1997-06-24 | 1998-12-30 | Isuzu Ceramics Research Institute Co., Ltd. | A ceramic thermocouple for measuring temperature of molten metal |
US5968275A (en) | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
US5759281A (en) | 1997-06-30 | 1998-06-02 | Emcore Corporation | CVD reactor for uniform heating with radiant heating filaments |
US6022180A (en) | 1997-07-02 | 2000-02-08 | Fujitsu Limited | Cartridge transferring robot for library apparatus |
US6357984B1 (en) | 1997-07-03 | 2002-03-19 | Asm International N.V. | Storage assembly for wafers |
US6630030B1 (en) | 1997-07-04 | 2003-10-07 | Asm Microchemistry Ltd. | Method and apparatus for growing thin films |
US20020094388A1 (en) | 1997-07-07 | 2002-07-18 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6531193B2 (en) | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6613685B1 (en) | 1997-07-08 | 2003-09-02 | Asm International N.V. | Method for supporting a semiconductor wafer during processing |
US6183565B1 (en) | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
US20010001953A1 (en) | 1997-07-10 | 2001-05-31 | Stewart K. Griffiths | Support apparatus for semiconductor wafer processing |
US6576064B2 (en) | 1997-07-10 | 2003-06-10 | Sandia Corporation | Support apparatus for semiconductor wafer processing |
US6083321A (en) | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
US6312525B1 (en) | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
US6024799A (en) | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
US5975492A (en) | 1997-07-14 | 1999-11-02 | Brenes; Arthur | Bellows driver slot valve |
EP1889817A2 (en) | 1997-07-14 | 2008-02-20 | Silicon Valley Group Thermal Systems LLC | Single body injector |
US6139983A (en) | 1997-07-15 | 2000-10-31 | Ngk Insulators, Ltd. | Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same |
US6176929B1 (en) | 1997-07-22 | 2001-01-23 | Ebara Corporation | Thin-film deposition apparatus |
US6274878B1 (en) | 1997-07-23 | 2001-08-14 | Applied Materials, Inc. | Wafer out-of-pocket detection method |
US6013553A (en) | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
US5827420A (en) | 1997-07-29 | 1998-10-27 | World Precision Instruments, Inc. | Method and apparatus for the generation of nitric oxide |
US6135460A (en) | 1997-07-31 | 2000-10-24 | Texas Instruments Incorporated | Method of and apparatus for purifying reduced pressure process chambers |
US5884640A (en) | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6321680B2 (en) | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US20030134038A1 (en) | 1997-08-11 | 2003-07-17 | Paranjpe Ajit P. | Method and apparatus for layer by layer deposition of thin films |
US6224679B1 (en) | 1997-08-12 | 2001-05-01 | Tokyo Electron Limited | Controlling gas in a multichamber processing system |
US6162323A (en) | 1997-08-12 | 2000-12-19 | Tokyo Electron Yamanashi Limited | Plasma processing apparatus |
US6121158A (en) | 1997-08-13 | 2000-09-19 | Sony Corporation | Method for hardening a photoresist material formed on a substrate |
US6090212A (en) | 1997-08-15 | 2000-07-18 | Micro C Technologies, Inc. | Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate |
US6530994B1 (en) | 1997-08-15 | 2003-03-11 | Micro C Technologies, Inc. | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
US6242359B1 (en) | 1997-08-20 | 2001-06-05 | Air Liquide America Corporation | Plasma cleaning and etching methods using non-global-warming compounds |
USD404370S (en) | 1997-08-20 | 1999-01-19 | Tokyo Electron Limited | Cap for use in a semiconductor wafer heat processing apparatus |
USD404372S (en) | 1997-08-20 | 1999-01-19 | Tokyo Electron Limited | Ring for use in a semiconductor wafer heat processing apparatus |
KR100253664B1 (en) | 1997-08-22 | 2000-04-15 | 이해광 | Operating system of polyimide dryer |
US5879459A (en) | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6104011A (en) | 1997-09-04 | 2000-08-15 | Watlow Electric Manufacturing Company | Sheathed thermocouple with internal coiled wires |
US6507410B1 (en) | 1997-09-08 | 2003-01-14 | Canon Kabushiki Kaisha | Method for non-linear document conversion and printing |
US6027163A (en) | 1997-09-10 | 2000-02-22 | Graco Children's Products Inc. | Juvenile carrier with moveable canopy |
US6099651A (en) | 1997-09-11 | 2000-08-08 | Applied Materials, Inc. | Temperature controlled chamber liner |
USD419652S (en) | 1997-09-23 | 2000-01-25 | Imbibitive Technologies Corp. | Stand-pipe assembly unit for a containment basin which holds a sorbent material containing cartridge and which can hold a silt-collecting sock over its top tray |
JPH1197163A (en) | 1997-09-24 | 1999-04-09 | Mitsubishi Heavy Ind Ltd | Device for maintaining gap for positioning high frequency heating coil |
US20010034097A1 (en) | 1997-09-29 | 2001-10-25 | Hyun-Seok Lim | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
US6368987B1 (en) | 1997-09-30 | 2002-04-09 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6243654B1 (en) | 1997-10-07 | 2001-06-05 | Telemonitor, Inc. | Transducer assembly with smart connector |
JPH11118615A (en) | 1997-10-09 | 1999-04-30 | Kakunenryo Cycle Kaihatsu Kiko | Temperature sensor for object to be measured having stretchability |
US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
US5908672A (en) | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
US6121061A (en) | 1997-11-03 | 2000-09-19 | Asm America, Inc. | Method of processing wafers with low mass support |
US6325858B1 (en) | 1997-11-03 | 2001-12-04 | Asm America, Inc. | Long life high temperature process chamber |
WO1999023690A1 (en) | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Method of processing wafers with low mass support |
US20020043337A1 (en) | 1997-11-03 | 2002-04-18 | Goodman Matthew G. | Low mass wafer support system |
US6164894A (en) | 1997-11-04 | 2000-12-26 | Cheng; David | Method and apparatus for integrated wafer handling and testing |
US6035804A (en) | 1997-11-07 | 2000-03-14 | Tokyo Electron Limited | Process chamber apparatus |
US6699399B1 (en) | 1997-11-12 | 2004-03-02 | Applied Materials, Inc | Self-cleaning etch process |
US6503826B1 (en) | 1997-11-12 | 2003-01-07 | Nec Corporation | Semiconductor device and method for manufacturing the same |
US20020124883A1 (en) | 1997-11-14 | 2002-09-12 | Dao-Hong Zheng | Gas control device and method of supplying gas |
US20020023677A1 (en) | 1997-11-14 | 2002-02-28 | Dao-Hong Zheng | Gas control device and method of supplying gas |
US20020096211A1 (en) | 1997-11-14 | 2002-07-25 | Dao-Hong Zheng | Gas control device and method of supplying gas |
US6068441A (en) | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
US6574644B2 (en) | 1997-11-26 | 2003-06-03 | Siemens Corporate Research, Inc | Automatic capturing of hyperlink specifications for multimedia documents |
US6315512B1 (en) | 1997-11-28 | 2001-11-13 | Mattson Technology, Inc. | Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber |
US6013920A (en) | 1997-11-28 | 2000-01-11 | Fortrend Engineering Coirporation | Wafer-mapping load post interface having an effector position sensing device |
US6432479B2 (en) | 1997-12-02 | 2002-08-13 | Applied Materials, Inc. | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
US6079356A (en) | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US20010003015A1 (en) | 1997-12-02 | 2001-06-07 | Mei Chang | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
US6106625A (en) | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
KR100295043B1 (en) | 1997-12-03 | 2001-10-19 | 윤종용 | Method for forming a metal film of a semiconductor device using an insulating film having a low dielectric constant as an interdielectric layer |
US20010048981A1 (en) | 1997-12-15 | 2001-12-06 | Nobumasa Suzuki | Method of processing substrate |
US20010017103A1 (en) | 1997-12-15 | 2001-08-30 | Tokyo Electron Limited | Method of coating film, coating unit, aging unit, solvent replacement unit, and apparatus for coating film |
JPH11183264A (en) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | Temperature measuring instrument with thermocouple |
JPH11183265A (en) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | Temperature measuring instrument with thermocouple |
US6159301A (en) | 1997-12-17 | 2000-12-12 | Asm Japan K.K. | Substrate holding apparatus for processing semiconductor |
US20020045336A1 (en) | 1997-12-18 | 2002-04-18 | Vanda Locati | Methods for forming improved passivation layers for integrated circuits |
US5897379A (en) | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
US6093611A (en) | 1997-12-19 | 2000-07-25 | Advanced Micro Devices, Inc. | Oxide liner for high reliability with reduced encroachment of the source/drain region |
US6402806B1 (en) | 1997-12-23 | 2002-06-11 | Applied Materials, Inc. | Method for unreacted precursor conversion and effluent removal |
US6099649A (en) | 1997-12-23 | 2000-08-08 | Applied Materials, Inc. | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
JPH11195688A (en) | 1997-12-26 | 1999-07-21 | Mc Electronics Kk | Substrate treatment device |
KR100273261B1 (en) | 1997-12-26 | 2000-12-15 | 김영환 | Gas mixing apparatus of depositor |
US6207932B1 (en) | 1997-12-30 | 2001-03-27 | Hyundai Electronics Industries, Co., Ltd. | Heater block for heating wafer |
US6363294B1 (en) | 1997-12-30 | 2002-03-26 | International Business Machines Corporation | Method and system for semiconductor wafer fabrication process real-time in-situ interactive supervision |
USD409894S (en) | 1997-12-30 | 1999-05-18 | Mcclurg Ben B | Sheet rock plug |
US6174809B1 (en) | 1997-12-31 | 2001-01-16 | Samsung Electronics, Co., Ltd. | Method for forming metal layer using atomic layer deposition |
US20030205202A1 (en) | 1998-01-05 | 2003-11-06 | Kokusai Electric Co., Ltd. | Plasma cvd device |
US6335240B1 (en) | 1998-01-06 | 2002-01-01 | Samsung Electronics Co., Ltd. | Capacitor for a semiconductor device and method for forming the same |
US5970621A (en) | 1998-01-16 | 1999-10-26 | Pri Automation, Inc. | Semiconductor wafer cassette positioning and detection mechanism |
US6265113B1 (en) | 1998-01-21 | 2001-07-24 | Mitsubishi Denki Kabushiki Kaisha | Stress adjustment method of X-ray mask |
US6091062A (en) | 1998-01-27 | 2000-07-18 | Kinetrix, Inc. | Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly |
US6039809A (en) | 1998-01-27 | 2000-03-21 | Mitsubishi Materials Silicon Corporation | Method and apparatus for feeding a gas for epitaxial growth |
US6663332B1 (en) | 1998-01-27 | 2003-12-16 | Asm International N.V. | System for the treatment of wafers |
US6125789A (en) | 1998-01-30 | 2000-10-03 | Applied Materials, Inc. | Increasing the sensitivity of an in-situ particle monitor |
US6432849B1 (en) | 1998-02-04 | 2002-08-13 | Nikon Corporation | Substrate storage cassette positioning device and method |
US6352945B1 (en) | 1998-02-05 | 2002-03-05 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US7582575B2 (en) | 1998-02-05 | 2009-09-01 | Asm Japan K.K. | Method for forming insulation film |
US20070004204A1 (en) | 1998-02-05 | 2007-01-04 | Asm Japan K.K. | Method for forming insulation film |
US6455445B2 (en) | 1998-02-05 | 2002-09-24 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6383955B1 (en) | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6410463B1 (en) | 1998-02-05 | 2002-06-25 | Asm Japan K.K. | Method for forming film with low dielectric constant on semiconductor substrate |
US7354873B2 (en) | 1998-02-05 | 2008-04-08 | Asm Japan K.K. | Method for forming insulation film |
US6352049B1 (en) | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
US6074514A (en) | 1998-02-09 | 2000-06-13 | Applied Materials, Inc. | High selectivity etch using an external plasma discharge |
US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6413583B1 (en) | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6050506A (en) | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
US6245647B1 (en) | 1998-02-23 | 2001-06-12 | Shin-Etsu Handotai Co., Ltd. | Method for fabrication of thin film |
US6072163A (en) | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
US5897348A (en) | 1998-03-13 | 1999-04-27 | Texas Instruments - Acer Incorporated | Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance |
US20020016829A1 (en) | 1998-03-19 | 2002-02-07 | Isochron Data Corporation | Remote data acquisition, transmission and analysis system including handheld wireless equipment |
US6433298B1 (en) | 1998-03-20 | 2002-08-13 | Tokyo Electron Limited | Plasma processing apparatus |
US6231290B1 (en) | 1998-03-23 | 2001-05-15 | Tokyo Electron | Processing method and processing unit for substrate |
US6316371B1 (en) | 1998-03-30 | 2001-11-13 | Asm International N.V. | Method for the chemical treatment of a semiconductor substrate |
US6203618B1 (en) | 1998-03-31 | 2001-03-20 | Canon Kabushiki Kaisha | Exhaust system and vacuum processing apparatus |
JPH11287715A (en) | 1998-04-02 | 1999-10-19 | Canon Inc | Thermocouple |
US6093253A (en) | 1998-04-06 | 2000-07-25 | Abb Research Ltd. | Method and a device for epitaxial growth of objects by chemical vapor deposition |
US6015465A (en) | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US6503365B1 (en) | 1998-04-21 | 2003-01-07 | Samsung Electronics Co., Ltd. | Multi-chamber system having compact installation set-up for an etching facility for semiconductor device manufacturing |
US6079927A (en) | 1998-04-22 | 2000-06-27 | Varian Semiconductor Equipment Associates, Inc. | Automated wafer buffer for use with wafer processing equipment |
US6225020B1 (en) | 1998-04-30 | 2001-05-01 | Hyundai Electronics Industries Co., Ltd. | Polymer and a forming method of a micro pattern using the same |
US6316162B1 (en) | 1998-04-30 | 2001-11-13 | Hyundai Electronics Industries Co., Ltd. | Polymer and a forming method of a micro pattern using the same |
US6126848A (en) | 1998-05-06 | 2000-10-03 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction and chemiluminescence |
US6060721A (en) | 1998-05-06 | 2000-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus for detecting correct positioning of a wafer cassette |
US20010016273A1 (en) | 1998-05-08 | 2001-08-23 | Krishnan Narasimhan | Multilayer cvd coated article and process for producing same |
US6441350B1 (en) | 1998-05-11 | 2002-08-27 | Brooks Automation Inc. | Temperature control system for a thermal reactor |
US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6209221B1 (en) | 1998-05-14 | 2001-04-03 | Asm International N.V. | Wafer rack provided with a gas distribution device |
US20040080697A1 (en) | 1998-05-16 | 2004-04-29 | Song Jang-Kun | Liquid crystal displays having multi-domains and a manufacturing method thereof |
US6284050B1 (en) | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
US20010049202A1 (en) | 1998-05-20 | 2001-12-06 | Kazuo Maeda | Method of film formation and method for manufacturing semiconductor device |
US6160244A (en) | 1998-05-29 | 2000-12-12 | Ngk Insulators, Ltd. | Susceptors |
KR20000000946A (en) | 1998-06-05 | 2000-01-15 | 주재현 | Vaporizer and chemical vapor deposition apparatus using the same |
US6481945B1 (en) | 1998-06-05 | 2002-11-19 | Asm International N.V. | Method and device for transferring wafers |
US20100270675A1 (en) | 1998-06-11 | 2010-10-28 | Oki Semiconductor Co., Ltd. | Semiconductor device having damascene interconnection structure that prevents void formation between interconnections having transparent dielectric substrate |
US20020009861A1 (en) | 1998-06-12 | 2002-01-24 | Pravin K. Narwankar | Method and apparatus for the formation of dielectric layers |
US6146463A (en) | 1998-06-12 | 2000-11-14 | Applied Materials, Inc. | Apparatus and method for aligning a substrate on a support member |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
US6212789B1 (en) | 1998-06-19 | 2001-04-10 | Canon Sales Co., Inc. | Semiconductor device manufacturing system |
US6099302A (en) | 1998-06-23 | 2000-08-08 | Samsung Electronics Co., Ltd. | Semiconductor wafer boat with reduced wafer contact area |
USD412512S (en) | 1998-06-24 | 1999-08-03 | Marc H Boisvert | Tool holding device |
US6129546A (en) | 1998-06-25 | 2000-10-10 | Tokyo Electron Limited | Heat process apparatus and heat process method |
US6015459A (en) | 1998-06-26 | 2000-01-18 | Extreme Devices, Inc. | Method for doping semiconductor materials |
US20030022523A1 (en) | 1998-06-30 | 2003-01-30 | Fujitsu Limited | Manufacture system for semiconductor device with thin gate insulating film |
US20010018267A1 (en) | 1998-07-03 | 2001-08-30 | Hiroshi Shinriki | Single-substrate-heat-processing apparatus and method for performing reformation and crystallization |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US20010006070A1 (en) | 1998-07-13 | 2001-07-05 | Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6335293B1 (en) | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US6210485B1 (en) | 1998-07-21 | 2001-04-03 | Applied Materials, Inc. | Chemical vapor deposition vaporizer |
US6305898B1 (en) | 1998-07-22 | 2001-10-23 | Asm Japan K.K. | Wafer transfer mechanism |
US6239402B1 (en) | 1998-07-24 | 2001-05-29 | Ngk Insulators, Ltd. | Aluminum nitride-based sintered bodies, corrosion-resistant members, metal-buried articles and semiconductor-holding apparatuses |
US20010015343A1 (en) | 1998-07-29 | 2001-08-23 | Hessel Sprey | Method and installation for etching a substrate |
US6569239B2 (en) | 1998-07-29 | 2003-05-27 | Shin-Etsu Handotai Co., Ltd. | Silicon epitaxial wafer and production method therefor |
US6344232B1 (en) | 1998-07-30 | 2002-02-05 | The United States Of America As Represented By The Secretary Of The Air Force | Computer controlled temperature and oxygen maintenance for fiber coating CVD |
US6179955B1 (en) | 1998-08-03 | 2001-01-30 | Samsung Electronics Co., Ltd. | Dry etching apparatus for manufacturing semiconductor devices |
US6270572B1 (en) | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
USD412270S (en) | 1998-08-10 | 1999-07-27 | David Frank Fredrickson | Article lifter |
US6462310B1 (en) | 1998-08-12 | 2002-10-08 | Asml Us, Inc | Hot wall rapid thermal processor |
US6596398B1 (en) | 1998-08-21 | 2003-07-22 | Atofina Chemicals, Inc. | Solar control coated glass |
JP2000068355A (en) | 1998-08-21 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
US6452017B1 (en) | 1998-08-27 | 2002-09-17 | Micron Technology, Inc. | Complexes having tris(pyrazolyl)methanate ligands |
US6987155B2 (en) | 1998-08-27 | 2006-01-17 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
US20010031541A1 (en) | 1998-08-28 | 2001-10-18 | Arun Madan | Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
US20020008270A1 (en) | 1998-09-03 | 2002-01-24 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
US6692575B1 (en) | 1998-09-03 | 2004-02-17 | Cvc Products Inc. | Apparatus for supporting a substrate in a reaction chamber |
US20010002581A1 (en) | 1998-09-03 | 2001-06-07 | Kazuyasu Nishikawa | System for manufacturing a semiconductor device |
US20010021591A1 (en) | 1998-09-03 | 2001-09-13 | Anand Srinivasan | Methods of forming insulating materials |
US6344084B1 (en) | 1998-09-11 | 2002-02-05 | Japan Science And Technology Corporation | Combinatorial molecular layer epitaxy device |
US6623799B1 (en) | 1998-09-11 | 2003-09-23 | Genitech Co., Ltd. | Chemical vapor deposition method using a catalyst on a substrate surface |
US6284149B1 (en) | 1998-09-18 | 2001-09-04 | Applied Materials, Inc. | High-density plasma etching of carbon-based low-k materials in a integrated circuit |
US6439822B1 (en) | 1998-09-22 | 2002-08-27 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US6187672B1 (en) | 1998-09-22 | 2001-02-13 | Conexant Systems, Inc. | Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing |
US20050059264A1 (en) | 1998-09-29 | 2005-03-17 | David Cheung | CVD plasma assisted low dielectric constant films |
US6143082A (en) | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
US6257758B1 (en) | 1998-10-09 | 2001-07-10 | Claud S. Gordon Company | Surface temperature sensor |
US7077614B1 (en) | 1998-10-14 | 2006-07-18 | Asm International N.V. | Sorting/storage device for wafers and method for handling thereof |
USD452220S1 (en) | 1998-10-15 | 2001-12-18 | Meto International Gmbh | Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element |
USD451893S1 (en) | 1998-10-15 | 2001-12-11 | Meto International Gmbh | Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element |
US20010040511A1 (en) | 1998-10-20 | 2001-11-15 | Brendyl Trent Bushner | Remote securities based data reception and order system |
US20060196421A1 (en) | 1998-10-27 | 2006-09-07 | Ronsse Bobby M | Apparatus for the deposition of high dielectric constant films |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US20020192370A1 (en) | 1998-10-27 | 2002-12-19 | Metzner Craig R. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US6063196A (en) | 1998-10-30 | 2000-05-16 | Applied Materials, Inc. | Semiconductor processing chamber calibration tool |
US6676759B1 (en) | 1998-10-30 | 2004-01-13 | Applied Materials, Inc. | Wafer support device in semiconductor manufacturing device |
KR20000031098A (en) | 1998-11-03 | 2000-06-05 | 윤종용 | Spike thermocouple element for detecting temperature of heating furnace |
US20010014514A1 (en) | 1998-11-10 | 2001-08-16 | Joseph E Geusic | Low temperature silicon wafer bond process with bulk material bond strength |
US6183564B1 (en) | 1998-11-12 | 2001-02-06 | Tokyo Electron Limited | Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system |
US6214717B1 (en) | 1998-11-16 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method for adding plasma treatment on bond pad to prevent bond pad staining problems |
US6699003B2 (en) | 1998-11-17 | 2004-03-02 | Tokyo Electron Limited | Carrying device |
US20030012632A1 (en) | 1998-11-17 | 2003-01-16 | Hiroaki Saeki | Carrying device |
US6450757B1 (en) | 1998-11-17 | 2002-09-17 | Tokyo Electron Limited | Conveyor system |
US6247245B1 (en) | 1998-11-18 | 2001-06-19 | Tokyo Electron Limited | Processing unit for substrate manufacture |
US6143079A (en) | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6113703A (en) | 1998-11-25 | 2000-09-05 | Applied Materials, Inc. | Method and apparatus for processing the upper and lower faces of a wafer |
US6368773B1 (en) | 1998-11-27 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | Photoresist cross-linker and photoresist composition comprising the same |
US20020073923A1 (en) | 1998-11-27 | 2002-06-20 | Yukimasa Saito | Heat treatment apparatus and cleaning method of the same |
US6383300B1 (en) | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
US20020005943A1 (en) | 1998-11-30 | 2002-01-17 | Obschestvo S Ogranichennoi Otvetstvennostiju "Reflex Lait" | Method for inspection of an analyzed surface and surface scanning analyzer |
US6283692B1 (en) | 1998-12-01 | 2001-09-04 | Applied Materials, Inc. | Apparatus for storing and moving a cassette |
US6245665B1 (en) | 1998-12-09 | 2001-06-12 | Nec Corporation | Semiconductor device and method of fabricating the same |
US20020005400A1 (en) | 1998-12-10 | 2002-01-17 | Arnon Gat | Rapid thermal processing chamber for processing multiple wafers |
US20010052556A1 (en) | 1998-12-14 | 2001-12-20 | Weichi Ting | Injector |
US20010054381A1 (en) | 1998-12-14 | 2001-12-27 | Salvador P Umotoy | High temperature chemical vapor deposition chamber |
US6713824B1 (en) | 1998-12-15 | 2004-03-30 | Kabushiki Kaisha Toshiba | Reliable semiconductor device and method of manufacturing the same |
JP2000182949A (en) | 1998-12-17 | 2000-06-30 | Tokyo Electron Ltd | Processing device and clean air supply method therefor |
US6255221B1 (en) | 1998-12-17 | 2001-07-03 | Lam Research Corporation | Methods for running a high density plasma etcher to achieve reduced transistor device damage |
US6296909B1 (en) | 1998-12-22 | 2001-10-02 | General Electric Company | Method for thermally spraying crack-free mullite coatings on ceramic-based substrates |
US6607948B1 (en) | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
US6496819B1 (en) | 1998-12-28 | 2002-12-17 | Oracle Corporation | Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability |
KR20000045257A (en) | 1998-12-30 | 2000-07-15 | 서평원 | Method for searching cell in mobile communication system |
US6137240A (en) | 1998-12-31 | 2000-10-24 | Lumion Corporation | Universal ballast control circuit |
US20030153186A1 (en) | 1999-01-05 | 2003-08-14 | Ronny Bar-Gadda | Apparatus and method using a remote RF energized plasma for processing semiconductor wafers |
US20030170153A1 (en) | 1999-01-05 | 2003-09-11 | Ronny Bar-Gadda | Method and apparatus for generating H20 to be used in a wet oxidation process to form SiO2 on a silicon surface |
US20040115936A1 (en) | 1999-01-05 | 2004-06-17 | Depetrillo Al | Remote ICP torch for semiconductor processing |
US6659111B1 (en) | 1999-01-12 | 2003-12-09 | Central Glass Company, Limited | Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas |
US6719499B1 (en) | 1999-01-13 | 2004-04-13 | Asm International N.V. | Device for positioning a wafer |
US6478872B1 (en) | 1999-01-18 | 2002-11-12 | Samsung Electronics Co., Ltd. | Method of delivering gas into reaction chamber and shower head used to deliver gas |
US6241822B1 (en) | 1999-01-19 | 2001-06-05 | Nec Corporation | Vertical heat treatment apparatus |
US6490493B1 (en) | 1999-01-21 | 2002-12-03 | Rosemount Inc. | Industrial process device management software |
US20040241998A1 (en) | 1999-01-22 | 2004-12-02 | Hanson Kyle M. | System for processing a workpiece |
US20040134429A1 (en) | 1999-01-22 | 2004-07-15 | Hideo Yamanaka | Film forming method and film forming apparatus |
US6235121B1 (en) | 1999-01-26 | 2001-05-22 | Tokyo Electron Limited | Vertical thermal treatment apparatus |
US6582174B1 (en) | 1999-01-26 | 2003-06-24 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20010019347A1 (en) | 1999-01-28 | 2001-09-06 | Mark Hauck | Method for regulating pressure |
US6737716B1 (en) | 1999-01-29 | 2004-05-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US6640145B2 (en) | 1999-02-01 | 2003-10-28 | Steven Hoffberg | Media recording device with packet data interface |
US6044860A (en) | 1999-02-01 | 2000-04-04 | Spx Corporation | Adjustable lockout device for knife gate valves |
US6374831B1 (en) | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
US20030198587A1 (en) | 1999-02-12 | 2003-10-23 | Gelest, Inc. | Method for low-temperature organic chemical vapor deposition of tungsten nitride, tungsten nitride films and tungsten nitride diffusion barriers for computer interconnect metallization |
US6648974B1 (en) | 1999-02-12 | 2003-11-18 | Lpe Spa | Device and method for handling substrates by means of a self-leveling vacuum system in epitaxial induction |
US6190037B1 (en) | 1999-02-19 | 2001-02-20 | Applied Materials, Inc. | Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system |
US6488774B1 (en) | 1999-02-26 | 2002-12-03 | Ebara Corporation | Trap apparatus |
US6528171B1 (en) | 1999-03-03 | 2003-03-04 | Widia Gmbh | Tool with a molybdenum sulfide containing coating and method for its production |
US20020110695A1 (en) | 1999-03-17 | 2002-08-15 | Yang Barry Lee-Mean | Multilayer article and method of making by arc plasma deposition |
JP2000269163A (en) | 1999-03-18 | 2000-09-29 | Sony Corp | Formation method for metal film and wiring |
US6250250B1 (en) | 1999-03-18 | 2001-06-26 | Yuri Maishev | Multiple-cell source of uniform plasma |
US6022802A (en) | 1999-03-18 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company | Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines |
US6700089B1 (en) | 1999-03-30 | 2004-03-02 | Tokyo Electron Limited | Plasma processing device, its maintenance method, and its installation method |
US20020052119A1 (en) | 1999-03-31 | 2002-05-02 | Patrick A. Van Cleemput | In-situ flowing bpsg gap fill process using hdp |
US6578589B1 (en) | 1999-03-31 | 2003-06-17 | Super Silicon Crystal Research Institute Corp. | Apparatus for manufacturing semiconductor wafer |
US6435798B1 (en) | 1999-04-09 | 2002-08-20 | Asm Japan K.K. | Semiconductor processing apparatus with substrate-supporting mechanism |
US20020011310A1 (en) | 1999-04-12 | 2002-01-31 | Mohammad Kamarehi | Downstream sapphire elbow joint for remote plasma generator |
US20020066532A1 (en) | 1999-04-13 | 2002-06-06 | Hong Shih | Corrosion-resistant protective coating for an apparatus and method for processing a substrate |
US6264467B1 (en) | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
US6274496B1 (en) | 1999-04-20 | 2001-08-14 | Tokyo Electron Limited | Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing |
US6265311B1 (en) | 1999-04-27 | 2001-07-24 | Tokyo Electron Limited | PECVD of TaN films from tantalum halide precursors |
US6410433B1 (en) | 1999-04-27 | 2002-06-25 | Tokyo Electron Limited | Thermal CVD of TaN films from tantalum halide precursors |
US20070258855A1 (en) | 1999-04-30 | 2007-11-08 | Tso3, Inc. | Method and apparatus for ozone sterilization |
US6471779B1 (en) | 1999-04-30 | 2002-10-29 | Ngk Insulators, Ltd. | Gas feed ceramic structure for semiconductor-producing apparatus |
US6042652A (en) | 1999-05-01 | 2000-03-28 | P.K. Ltd | Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
US6187691B1 (en) | 1999-05-14 | 2001-02-13 | Asm Japan K.K. | Method of forming film on semiconductor substrate in film-forming apparatus |
US6497767B1 (en) | 1999-05-14 | 2002-12-24 | Tokyo Electron Limited | Thermal processing unit for single substrate |
US6684659B1 (en) | 1999-05-17 | 2004-02-03 | Matsushita Refrigeration Company | Refrigerator and defrosting heater |
US6503562B1 (en) | 1999-05-17 | 2003-01-07 | Applied Materials, Inc. | Semiconductor fabrication apparatus and fabrication method thereof |
US20030062359A1 (en) | 1999-05-19 | 2003-04-03 | Henry Ho | Multi-zone resistive heater |
US6423949B1 (en) | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
US6440261B1 (en) | 1999-05-25 | 2002-08-27 | Applied Materials, Inc. | Dual buffer chamber cluster tool for semiconductor wafer processing |
US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
US20030015294A1 (en) | 1999-05-27 | 2003-01-23 | Albert Wang | Rapid heating and cooling of workpiece chucks |
US20010007645A1 (en) | 1999-05-28 | 2001-07-12 | Tokyo Electron Limited | Ozone processing apparatus for semiconductor processing system |
US20020033183A1 (en) | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
US20030066541A1 (en) | 1999-05-29 | 2003-04-10 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
US6446573B2 (en) | 1999-05-31 | 2002-09-10 | Tadahiro Ohmi | Plasma process device |
US6200897B1 (en) | 1999-06-06 | 2001-03-13 | United Semiconductor Corp. | Method for manufacturing even dielectric layer |
US6565763B1 (en) | 1999-06-07 | 2003-05-20 | Kabushiki Kaisha Toshiba | Method for manufacturing porous structure and method for forming pattern |
US6656281B1 (en) | 1999-06-09 | 2003-12-02 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20020155219A1 (en) | 1999-06-11 | 2002-10-24 | Shulin Wang | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
US20020064598A1 (en) | 1999-06-11 | 2002-05-30 | Shulin Wang | Method of depositing a thick titanium nitride film |
US6464825B1 (en) | 1999-06-15 | 2002-10-15 | Ebara Corporation | Substrate processing apparatus including a magnetically levitated and rotated substrate holder |
US6281098B1 (en) | 1999-06-15 | 2001-08-28 | Midwest Research Institute | Process for Polycrystalline film silicon growth |
EP1061567A1 (en) | 1999-06-17 | 2000-12-20 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for manufacturing an improved phosphosilicate glass film |
US6321780B1 (en) | 1999-06-17 | 2001-11-27 | Benkan Corporation | Valve for controlling flow rate of gas |
US6528752B1 (en) | 1999-06-18 | 2003-03-04 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20050101154A1 (en) | 1999-06-18 | 2005-05-12 | Judy Huang | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6539891B1 (en) | 1999-06-19 | 2003-04-01 | Genitech, Inc. | Chemical deposition reactor and method of forming a thin film using the same |
US6812157B1 (en) | 1999-06-24 | 2004-11-02 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
US6399022B1 (en) | 1999-06-28 | 2002-06-04 | Fairchild Semiconductor Corporation | Simplified ozonator for a semiconductor wafer cleaner |
US6383566B1 (en) | 1999-06-30 | 2002-05-07 | Saint-Gobain Vitrage | Process for depositing a tungsten-based and/or molybdenum-based layer on a rigid substrate, and substrate thus coated |
US20010027026A1 (en) | 1999-06-30 | 2001-10-04 | Rajinder Dhindsa | Gas distribution apparatus for semiconductor processing |
US6587108B1 (en) | 1999-07-01 | 2003-07-01 | Honeywell Inc. | Multivariable process matrix display and methods regarding same |
JP2001015698A (en) | 1999-07-02 | 2001-01-19 | Matsushita Electronics Industry Corp | Semiconductor device and manufacture thereof |
US6151446A (en) | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
US20020088542A1 (en) | 1999-07-07 | 2002-07-11 | Kazuyasu Nishikawa | Plasma processing apparatus |
US20010004880A1 (en) | 1999-07-07 | 2001-06-28 | The Co-Inventors To Applied Materials, Inc. | Pedestal with a thermally controlled platen |
US6240875B1 (en) | 1999-07-07 | 2001-06-05 | Asm International N.V. | Vertical oven with a boat for the uniform treatment of wafers |
US6454909B1 (en) | 1999-07-07 | 2002-09-24 | Tokyo Electron Limited | Method and apparatus for forming a film on an object to be processed |
US20010047761A1 (en) | 1999-07-07 | 2001-12-06 | Van Wijck Margreet Obertine Anne-Marie | Vertical oven with a boat for the uniform treatment of wafers |
US6238734B1 (en) | 1999-07-08 | 2001-05-29 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
JP2001023872A (en) | 1999-07-09 | 2001-01-26 | Hitachi Ltd | Semiconductor substrate processing apparatus |
US6375749B1 (en) | 1999-07-14 | 2002-04-23 | Seh America, Inc. | Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
US6756293B2 (en) | 1999-07-16 | 2004-06-29 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
US6297539B1 (en) | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
US7799300B2 (en) | 1999-07-20 | 2010-09-21 | Asm International N.V. | Method and apparatus for removing substances from gases |
US6617253B1 (en) | 1999-07-20 | 2003-09-09 | Samsung Electronics Co., Ltd. | Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method |
US6239715B1 (en) | 1999-07-21 | 2001-05-29 | Karen L. Belton | Beeper system |
US6889211B1 (en) | 1999-07-28 | 2005-05-03 | Hitachi, Ltd. | Method and system for distributing multimedia data with management information |
US6867859B1 (en) | 1999-08-03 | 2005-03-15 | Lightwind Corporation | Inductively coupled plasma spectrometer for process diagnostics and control |
US20050070128A1 (en) | 1999-08-17 | 2005-03-31 | Applied Materials, Inc. | Post-deposition treatment to enhance properties of Si-O-C low K films |
US6455225B1 (en) | 1999-08-17 | 2002-09-24 | Hyundai Electronics Industries Co., Ltd. | Photoresist monomers having stability to post exposure delay, polymers thereof and photoresist compositions containing the same |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
US20030066482A1 (en) | 1999-08-17 | 2003-04-10 | Applied Materials, Inc. | Lid cooling mechanism and method for optimized deposition of low-K dielectric using TRI methylsilane-ozone based processes |
US20030008528A1 (en) | 1999-08-17 | 2003-01-09 | Applied Materials, Inc. | Surface treatment of c-doped SiO2 film to enhance film stability during 02 ashing |
US7326657B2 (en) | 1999-08-17 | 2008-02-05 | Applied Materials, Inc. | Post-deposition treatment to enhance properties of Si-O-C low k films |
US8143174B2 (en) | 1999-08-17 | 2012-03-27 | Applied Materials, Inc. | Post-deposition treatment to enhance properties of Si-O-C low K films |
US20030077857A1 (en) | 1999-08-17 | 2003-04-24 | Applied Materials, Inc. | Post-deposition treatment to enhance properties of SI-O-C low films |
US6432206B1 (en) | 1999-08-30 | 2002-08-13 | Si Diamond Technology, Inc. | Heating element for use in a hot filament chemical vapor deposition chamber |
US6579833B1 (en) | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
US6673196B1 (en) | 1999-09-02 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus |
US6410459B2 (en) | 1999-09-02 | 2002-06-25 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing |
US20020187650A1 (en) | 1999-09-02 | 2002-12-12 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing |
US20010000141A1 (en) | 1999-09-03 | 2001-04-05 | Derong Zhou | Processes and systems for purification of boron trichloride |
US6474987B1 (en) | 1999-09-03 | 2002-11-05 | Mitsubishi Materials Silicon Corporation | Wafer holder |
US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US7141499B2 (en) | 1999-09-08 | 2006-11-28 | Asm America Inc. | Apparatus and method for growth of a thin film |
US7894474B1 (en) | 1999-09-10 | 2011-02-22 | Koninklijke Philips Electronics N.V. | Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station |
US7147766B2 (en) | 1999-09-17 | 2006-12-12 | Asm Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US20020123230A1 (en) | 1999-09-23 | 2002-09-05 | Jerome Hubacek | Gas distribution apparatus for semiconductor processing |
US6710364B2 (en) | 1999-09-24 | 2004-03-23 | Texas Instruments Incorporated | Semiconductor wafer edge marking |
US6293700B1 (en) | 1999-09-24 | 2001-09-25 | Fluke Corporation | Calibrated isothermal assembly for a thermocouple thermometer |
US6740853B1 (en) | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
US20030035705A1 (en) | 1999-09-29 | 2003-02-20 | Tokyo Electron Limited | Chuck transport method and system |
US6333275B1 (en) | 1999-10-01 | 2001-12-25 | Novellus Systems, Inc. | Etchant mixing system for edge bevel removal of copper from silicon wafers |
US6296710B1 (en) | 1999-10-06 | 2001-10-02 | Advanced Micro Devices, Inc. | Multi-port gas injector for a vertical furnace used in semiconductor processing |
US7010580B1 (en) | 1999-10-08 | 2006-03-07 | Agile Software Corp. | Method and apparatus for exchanging data in a platform independent manner |
US20030040120A1 (en) | 1999-10-12 | 2003-02-27 | Allen George A. | Systems and methods for measuring nitrate levels |
US6536950B1 (en) | 1999-10-13 | 2003-03-25 | Texaco Inc. | Sapphire reinforced thermocouple protection tube |
US6475276B1 (en) | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
US7144809B2 (en) | 1999-10-15 | 2006-12-05 | Asm International N.V. | Production of elemental films using a boron-containing reducing agent |
US6821889B2 (en) | 1999-10-15 | 2004-11-23 | Asm International N.V. | Production of elemental thin films using a boron-containing reducing agent |
US20030056726A1 (en) | 1999-10-18 | 2003-03-27 | Mark Holst | Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions |
US6500487B1 (en) | 1999-10-18 | 2002-12-31 | Advanced Technology Materials, Inc | Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions |
US6749671B2 (en) | 1999-10-18 | 2004-06-15 | Advanced Technology Materials, Inc. | Abatement of effluents from chemical vapor deposition processes using organometallic source reagents |
US6833024B2 (en) | 1999-10-18 | 2004-12-21 | Adanced Technology Materials, Inc. | Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions |
US6203613B1 (en) | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
US6716477B1 (en) | 1999-10-26 | 2004-04-06 | Tokyo Electron Limited | Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device |
US20010031535A1 (en) | 1999-10-26 | 2001-10-18 | Agnello Paul D. | Semiconductor chip having both compact memory and high performance logic |
US6326322B1 (en) | 1999-10-29 | 2001-12-04 | Samsung Electronics Co., Ltd. | Method for depositing a silicon nitride layer |
US6514666B1 (en) | 1999-11-05 | 2003-02-04 | Hyundai Electronics Industries Co., Ltd. | Photoresist monomers, polymers thereof and photoresist compositions containing it |
US6815352B1 (en) | 1999-11-09 | 2004-11-09 | Shin-Etsu Chemical Co., Ltd. | Silicon focus ring and method for producing the same |
KR100547248B1 (en) | 1999-11-12 | 2006-02-01 | 주식회사 하이닉스반도체 | A method for forming gate dielectric layer using alumina in semiconductor device |
US6320320B1 (en) | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
US20020104751A1 (en) | 1999-11-18 | 2002-08-08 | Drewery John Stephen | Method and apparatus for ionized physical vapor deposition |
US6951587B1 (en) | 1999-12-01 | 2005-10-04 | Tokyo Electron Limited | Ceramic heater system and substrate processing apparatus having the same installed therein |
US20030049571A1 (en) | 1999-12-02 | 2003-03-13 | Axcelis Technologies, Inc. | Process for reducing edge roughness in patterned photoresist |
US6342427B1 (en) | 1999-12-02 | 2002-01-29 | Electronics And Telecommunications Research Institute | Method for forming micro cavity |
US6780704B1 (en) | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
US20010024387A1 (en) | 1999-12-03 | 2001-09-27 | Ivo Raaijmakers | Conformal thin films over textured capacitor electrodes |
US20030188682A1 (en) | 1999-12-03 | 2003-10-09 | Asm Microchemistry Oy | Method of growing oxide films |
US7824492B2 (en) | 1999-12-03 | 2010-11-02 | Asm International N.V. | Method of growing oxide thin films |
US20010003191A1 (en) | 1999-12-03 | 2001-06-07 | Kovacs Ern?Ouml; | Communication device and software for operating multimedia applications |
US6590251B2 (en) | 1999-12-08 | 2003-07-08 | Samsung Electronics Co., Ltd. | Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors |
US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US20010003271A1 (en) | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US20030085663A1 (en) | 1999-12-13 | 2003-05-08 | Horsky Thomas N. | Electron beam ion source with integral low-temperature vaporizer |
US6429465B1 (en) | 1999-12-13 | 2002-08-06 | Fuji Xerox Co., Ltd. | Nitride semiconductor device and method of manufacturing the same |
US20030230986A1 (en) | 1999-12-13 | 2003-12-18 | Horsky Thomas Neil | Ion implantation ion source, system and method |
US20070170372A1 (en) | 1999-12-13 | 2007-07-26 | Semequip, Inc. | Dual mode ion source for ion implantation |
US6720262B2 (en) | 1999-12-15 | 2004-04-13 | Genitech, Inc. | Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst |
US6225745B1 (en) | 1999-12-17 | 2001-05-01 | Axcelis Technologies, Inc. | Dual plasma source for plasma process chamber |
US6299133B2 (en) | 1999-12-21 | 2001-10-09 | Smc Kabushiki Kaisha | Gate valve |
US20030042419A1 (en) | 1999-12-21 | 2003-03-06 | Hirohumi Katsumata | Method and apparatus for detecting a wafer's posture on a susceptor |
US20030027431A1 (en) | 1999-12-22 | 2003-02-06 | Ofer Sneh | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US20040092120A1 (en) | 1999-12-22 | 2004-05-13 | Wicker Thomas E. | Semiconductor processing equipment having improved process drift control |
US20030111012A1 (en) | 1999-12-24 | 2003-06-19 | Murata Manufacturing Co., Ltd. | Method for forming a thin film and a thin film forming apparatus therefor |
US20010007246A1 (en) | 1999-12-28 | 2001-07-12 | Masashi Ueda | Thin-film deposition apparatus |
US20020013792A1 (en) | 1999-12-30 | 2002-01-31 | Tomasz Imielinski | Virtual tags and the process of virtual tagging |
US6335049B1 (en) | 2000-01-03 | 2002-01-01 | Micron Technology, Inc. | Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor |
US20010007244A1 (en) | 2000-01-06 | 2001-07-12 | Kimihiro Matsuse | Film forming apparatus and film forming method |
US6576062B2 (en) | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
US20020170676A1 (en) | 2000-01-10 | 2002-11-21 | Mitrovic Andrej S. | Segmented electrode apparatus and method for plasma processing |
US20020011210A1 (en) | 2000-01-18 | 2002-01-31 | Kiyoshi Satoh | Semiconductor-processing device provided with a remote plasma source for self-cleaning |
US20020197849A1 (en) | 2000-01-18 | 2002-12-26 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
US6460482B1 (en) | 2000-01-20 | 2002-10-08 | Sumitomo Electric Industries, Ltd. | Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
US6527884B1 (en) | 2000-01-20 | 2003-03-04 | Hitachi Kokusai Electric, Inc. | Hydrogen annealing process and apparatus therefor |
US6608745B2 (en) | 2000-01-20 | 2003-08-19 | Ngk Insulators, Ltd. | Electrostatic chunks |
JP2001210602A (en) | 2000-01-27 | 2001-08-03 | Hitachi Kokusai Electric Inc | Substrate-processing apparatus |
JP2001207265A (en) | 2000-01-27 | 2001-07-31 | Kubota Corp | Film deposition system |
JP2001207268A (en) | 2000-01-27 | 2001-07-31 | Kubota Corp | Film deposition system |
US6432255B1 (en) | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
US6475930B1 (en) | 2000-01-31 | 2002-11-05 | Motorola, Inc. | UV cure process and tool for low k film formation |
US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
US6191399B1 (en) | 2000-02-01 | 2001-02-20 | Asm America, Inc. | System of controlling the temperature of a processing chamber |
JP2001220677A (en) | 2000-02-03 | 2001-08-14 | Denso Corp | Method and apparatus for manufacturing thin film |
US20010019777A1 (en) | 2000-02-04 | 2001-09-06 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Chamber material made of Al alloy and heater block |
US6849241B2 (en) | 2000-02-04 | 2005-02-01 | Aixtron Ag. | Device and method for depositing one or more layers on a substrate |
US6372583B1 (en) | 2000-02-09 | 2002-04-16 | Intel Corporation | Process for making semiconductor device with epitaxially grown source and drain |
US20030145789A1 (en) | 2000-02-10 | 2003-08-07 | Hartmut Bauch | Gas supply device for precursors with a low vapor pressure |
US6627503B2 (en) | 2000-02-11 | 2003-09-30 | Sharp Laboratories Of America, Inc. | Method of forming a multilayer dielectric stack |
US20020009119A1 (en) | 2000-02-11 | 2002-01-24 | Matthew William T. | Environmental heat stress monitor |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US20070128538A1 (en) | 2000-02-17 | 2007-06-07 | Applied Materials, Inc. | Method of depositing an amorphous carbon layer |
US20030091938A1 (en) | 2000-02-17 | 2003-05-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon layer |
US6589707B2 (en) | 2000-02-18 | 2003-07-08 | Hyundai Electronics Industries Co., Ltd. | Partially crosslinked polymer for bilayer photoresist |
US6811960B2 (en) | 2000-02-18 | 2004-11-02 | Hyundai Electronics Industries Co., Ltd. | Partially crosslinked polymer for bilayer photoresist |
US20010019900A1 (en) | 2000-02-28 | 2001-09-06 | Hiroyuki Hasegawa | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US20020117262A1 (en) | 2000-02-28 | 2002-08-29 | Applied Materials, Inc. | Chemical vapor deposition chamber lid assembly |
US20010020715A1 (en) | 2000-03-02 | 2001-09-13 | Tokyo Electron Limited | Semiconductor device and manufacturing method therefor |
US20040037339A1 (en) | 2000-03-06 | 2004-02-26 | Watson Tom A. | Laser discharge chamber passivation by plasma |
US20050181555A1 (en) | 2000-03-07 | 2005-08-18 | Haukka Suvi P. | Thin films |
US6534395B2 (en) | 2000-03-07 | 2003-03-18 | Asm Microchemistry Oy | Method of forming graded thin films using alternating pulses of vapor phase reactants |
US20010041250A1 (en) | 2000-03-07 | 2001-11-15 | Werkhoven Christian J. | Graded thin films |
US6620251B2 (en) | 2000-03-08 | 2003-09-16 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US6455098B2 (en) | 2000-03-09 | 2002-09-24 | Semix Incorporated | Wafer processing apparatus and method |
US6475902B1 (en) | 2000-03-10 | 2002-11-05 | Applied Materials, Inc. | Chemical vapor deposition of niobium barriers for copper metallization |
US20030109951A1 (en) | 2000-03-10 | 2003-06-12 | Hsiung Chang-Meng B. | Monitoring system for an industrial process using one or more multidimensional variables |
JP2001257199A (en) | 2000-03-13 | 2001-09-21 | Matsushita Electric Ind Co Ltd | Plasma processing method and device thereof |
US6710857B2 (en) | 2000-03-13 | 2004-03-23 | Nikon Corporation | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
US6506009B1 (en) | 2000-03-16 | 2003-01-14 | Applied Materials, Inc. | Apparatus for storing and moving a cassette |
US6913796B2 (en) | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US6598559B1 (en) | 2000-03-24 | 2003-07-29 | Applied Materials, Inc. | Temperature controlled chamber |
US20010039966A1 (en) | 2000-03-28 | 2001-11-15 | Jim Walpole | Automatic valve |
US6828235B2 (en) | 2000-03-29 | 2004-12-07 | Hitachi Kokusai Electric Inc. | Semiconductor manufacturing method, substrate processing method, and semiconductor manufacturing apparatus |
US20030019580A1 (en) | 2000-03-30 | 2003-01-30 | Strang Eric J. | Method of and apparatus for tunable gas injection in a plasma processing system |
US6872259B2 (en) | 2000-03-30 | 2005-03-29 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
US6682971B2 (en) | 2000-03-30 | 2004-01-27 | Hitachi Kokusai Electric Inc. | Method of manufacturing a semiconductor |
US6633364B2 (en) | 2000-03-31 | 2003-10-14 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US20020061716A1 (en) | 2000-03-31 | 2002-05-23 | Speedfam-Ipec Corporation | Workpiece carrier with adjustable pressure zones and barriers |
JP2001287180A (en) | 2000-04-04 | 2001-10-16 | Sony Corp | Robot remote-control system and software distribution method |
US20010027585A1 (en) | 2000-04-06 | 2001-10-11 | Lg Electronics Inc. | Air circulation type vacuum cleaner |
US20020011211A1 (en) | 2000-04-06 | 2002-01-31 | Halpin Michael W. | Barrier coating for vitreous materials |
US20020000195A1 (en) | 2000-04-10 | 2002-01-03 | Won Bang | Concentration profile on demand gas delivery system (individual divert delivery system) |
US20070054049A1 (en) | 2000-04-14 | 2007-03-08 | Sven Lindfors | Method of growing a thin film onto a substrate |
US7754621B2 (en) | 2000-04-14 | 2010-07-13 | Asm International N.V. | Process for producing zirconium oxide thin films |
US20040261706A1 (en) | 2000-04-14 | 2004-12-30 | Sven Lindfors | Method of growing a thin film onto a substrate |
US20020108570A1 (en) | 2000-04-14 | 2002-08-15 | Sven Lindfors | Method and apparatus of growing a thin film onto a substrate |
USRE43023E1 (en) | 2000-04-17 | 2011-12-13 | Hitachi Kokusai Electric Inc. | Dual loading port semiconductor processing equipment |
US6451713B1 (en) | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
US20010038783A1 (en) | 2000-04-17 | 2001-11-08 | Hitachi Kokusai Electric Inc. | Dual loading port semiconductor processing equipment |
US6783875B2 (en) | 2000-04-18 | 2004-08-31 | Ngk Insulators, Ltd. | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
US6984591B1 (en) | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
US6329297B1 (en) | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US6952656B1 (en) | 2000-04-28 | 2005-10-04 | Applied Materials, Inc. | Wafer fabrication data acquisition and management systems |
US20020031644A1 (en) | 2000-04-28 | 2002-03-14 | Malofsky Adam G. | Fastening device |
US20030015141A1 (en) | 2000-04-28 | 2003-01-23 | Yoji Takagi | Wafer supporting device in semiconductor manufacturing device |
US6935269B2 (en) | 2000-05-02 | 2005-08-30 | Sem Technology Co., Ltd. | Apparatus for treating the surface with neutral particle beams |
US20010046765A1 (en) | 2000-05-05 | 2001-11-29 | Annalisa Cappellani | Method for producing a barrier layer in an electronic component and method for producing an electronic component with a barrier layer |
US20010039922A1 (en) | 2000-05-09 | 2001-11-15 | Takashi Nakahara | Processing chamber |
US20020100418A1 (en) | 2000-05-12 | 2002-08-01 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
US20010042511A1 (en) | 2000-05-12 | 2001-11-22 | Applied Materials, Inc. | Reduction of plasma edge effect on plasma enhanced CVD processes |
US20040005753A1 (en) | 2000-05-15 | 2004-01-08 | Juhana Kostamo | Method of growing electrical conductors |
US20010042514A1 (en) | 2000-05-17 | 2001-11-22 | Shigeru Mizuno | CVD apparatus |
US20020078893A1 (en) | 2000-05-18 | 2002-06-27 | Applied Materials , Inc. | Plasma enhanced chemical processing reactor and method |
US20010054388A1 (en) | 2000-05-22 | 2001-12-27 | Qian Shao Shou | Single-substrate-film-forming method and single-substrate-heat-processing apparatus |
US6387823B1 (en) | 2000-05-23 | 2002-05-14 | Advanced Micro Devices, Inc. | Method and apparatus for controlling deposition process using residual gas analysis |
US6499533B2 (en) | 2000-05-25 | 2002-12-31 | Sumitomo Heavy Industries, Ltd. | Cooling disk unit for use in a wafer chucking device |
US6559026B1 (en) | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US20020048634A1 (en) | 2000-05-26 | 2002-04-25 | Cem Basceri | Physical vapor deposition methods |
US20050186688A1 (en) | 2000-05-26 | 2005-08-25 | Cem Basceri | Chemical vapor deposition methods and physical vapor deposition methods |
US6884475B2 (en) | 2000-05-26 | 2005-04-26 | Micron Technology, Inc. | Chemical vapor deposition method for depositing a high k dielectric film |
US7052584B2 (en) | 2000-05-26 | 2006-05-30 | Micron Technology, Inc. | Method of forming a capacitor |
US20040228968A1 (en) | 2000-05-26 | 2004-11-18 | Micron Technology, Inc. | Chemical vapor deposition method for depositing a high k dielectric film |
US7217617B2 (en) | 2000-05-26 | 2007-05-15 | Micron Technology, Inc. | Methods of forming a capacitor |
US20050208219A1 (en) | 2000-05-26 | 2005-09-22 | Cem Basceri | Method of forming a capacitor |
US6558517B2 (en) | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
US6884295B2 (en) | 2000-05-29 | 2005-04-26 | Tokyo Electron Limited | Method of forming oxynitride film or the like and system for carrying out the same |
US20020009560A1 (en) | 2000-05-30 | 2002-01-24 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
US20010049080A1 (en) | 2000-05-31 | 2001-12-06 | Takanobu Asano | Heat treatment system and method |
US7425224B2 (en) | 2000-06-07 | 2008-09-16 | Tegal Corporation | High pressure chemical vapor trapping method |
US20040009307A1 (en) | 2000-06-08 | 2004-01-15 | Won-Yong Koh | Thin film forming method |
USD455024S1 (en) | 2000-06-09 | 2002-04-02 | Levenger Company | Portable writing surface |
US20030036272A1 (en) | 2000-06-13 | 2003-02-20 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
US20020014204A1 (en) | 2000-06-13 | 2002-02-07 | Pyo Sung Gyu | Heater block having catalyst spray means |
US6863019B2 (en) | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
US7070178B2 (en) | 2000-06-15 | 2006-07-04 | Koninklijke Philips Electronics N.V. | Holder for a substrate cassette and device provided with such a holder |
US6461435B1 (en) | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
US6346419B1 (en) | 2000-06-26 | 2002-02-12 | The United States Of America As Represented By The Department Of Commerce | Photolysis system for fast-response NO2 measurements and method therefor |
US20020001971A1 (en) | 2000-06-27 | 2002-01-03 | Hag-Ju Cho | Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same |
US6831004B2 (en) | 2000-06-27 | 2004-12-14 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US20050118804A1 (en) | 2000-06-27 | 2005-06-02 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US20040018723A1 (en) | 2000-06-27 | 2004-01-29 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US20020000202A1 (en) | 2000-06-29 | 2002-01-03 | Katsuhisa Yuda | Remote plasma apparatus for processing sustrate with two types of gases |
US20020001974A1 (en) | 2000-06-30 | 2002-01-03 | Lim Chan | Method for manufacturing zirconium oxide film for use in semiconductor device |
US20040031564A1 (en) | 2000-06-30 | 2004-02-19 | Lam Research Corporation | Switched uniformity control |
US6607868B2 (en) | 2000-06-30 | 2003-08-19 | Hynix Semiconductor Inc. | Photoresist monomers, polymers thereof, and photoresist compositions containing the same |
US6874480B1 (en) | 2000-07-03 | 2005-04-05 | Combustion Dynamics Corp. | Flow meter |
US20020014483A1 (en) | 2000-07-06 | 2002-02-07 | Fujio Suzuki | Batch type heat treatment system, method for controlling same, and heat treatment method |
US20020062633A1 (en) | 2000-07-06 | 2002-05-30 | Pri Automation, Inc. | Reticle storage and retrieval system |
US6562094B2 (en) | 2000-07-06 | 2003-05-13 | Pri Automation, Inc. | Reticle storage and retrieval system |
US20020020429A1 (en) | 2000-07-07 | 2002-02-21 | Selbrede Steven C. | Systems and methods for remote plasma clean |
US20030173030A1 (en) | 2000-07-11 | 2003-09-18 | Nobuo Ishii | Plasma processing apparatus |
JP2002164342A (en) | 2000-07-21 | 2002-06-07 | Canon Sales Co Inc | Semiconductor device and manufacturing method therefor |
US6821910B2 (en) | 2000-07-24 | 2004-11-23 | University Of Maryland, College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
US20040005147A1 (en) | 2000-07-24 | 2004-01-08 | Wenling Wang | Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system |
US20040099213A1 (en) | 2000-07-24 | 2004-05-27 | Adomaitis Raymond A | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
US20020015853A1 (en) | 2000-07-31 | 2002-02-07 | Kazuhiro Wataya | Method for formation of thermal-spray coating layer of rare earth fluoride |
US20030157345A1 (en) | 2000-08-01 | 2003-08-21 | Nasser Beldi | Plasma deposited barrier coating comprising an interface layer, method of obtaining same and container coated therewith |
US6450117B1 (en) | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
US6949204B1 (en) | 2000-08-08 | 2005-09-27 | Lam Research Corporation | Deformation reduction at the main chamber |
US20060081558A1 (en) | 2000-08-11 | 2006-04-20 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US20020022347A1 (en) | 2000-08-11 | 2002-02-21 | Jung-Woo Park | Selective epitaxial growth method in semiconductor device |
US20050191828A1 (en) | 2000-08-11 | 2005-09-01 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
US20020136214A1 (en) | 2000-08-14 | 2002-09-26 | Consumer Direct Link | Pervasive computing network architecture |
US20020030047A1 (en) | 2000-08-17 | 2002-03-14 | Shouqian Shao | Heat treatment apparatus having a thin light-transmitting window |
US20020188376A1 (en) | 2000-08-18 | 2002-12-12 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
US20030162412A1 (en) | 2000-08-18 | 2003-08-28 | Gishi Chung | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
US20020027945A1 (en) | 2000-08-22 | 2002-03-07 | Ryoichi Hirano | Temperature measuring method in pattern drawing apparatus |
US20020036065A1 (en) | 2000-08-22 | 2002-03-28 | Takayuki Yamagishi | Semiconductor processing module and apparatus |
US20020025688A1 (en) | 2000-08-23 | 2002-02-28 | Kazuhiko Kato | Heat-processing apparatus and method of semiconductor process |
US6566278B1 (en) | 2000-08-24 | 2003-05-20 | Applied Materials Inc. | Method for densification of CVD carbon-doped silicon oxide films through UV irradiation |
US6494998B1 (en) | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
US20050092733A1 (en) | 2000-08-30 | 2005-05-05 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing and inspecting equipment |
US6784108B1 (en) | 2000-08-31 | 2004-08-31 | Micron Technology, Inc. | Gas pulsing for etch profile control |
US6540469B2 (en) | 2000-09-05 | 2003-04-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US6506253B2 (en) | 2000-09-22 | 2003-01-14 | Tokyo Electron Limited | Photo-excited gas processing apparatus for semiconductor process |
USD449873S1 (en) | 2000-09-22 | 2001-10-30 | James Bronson | Garbage disposal strainer and splash guard |
US20070062646A1 (en) | 2000-09-25 | 2007-03-22 | Hitachi Kokusai Electric Inc. | Method and apparatus for processing substrates |
US20030143846A1 (en) | 2000-09-25 | 2003-07-31 | Akira Sekiya | Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds |
US6494065B2 (en) | 2000-09-26 | 2002-12-17 | Babbitt Steam Specialty Company | Valve lockout/tag out system |
US20040037675A1 (en) | 2000-09-27 | 2004-02-26 | Jan Zinger | Wafer handling system |
US20020099470A1 (en) | 2000-09-27 | 2002-07-25 | Jan Zinger | Wafer handling system |
US6981832B2 (en) | 2000-09-27 | 2006-01-03 | Asm International Nv | Wafer handling system |
US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
US20040043149A1 (en) | 2000-09-28 | 2004-03-04 | Gordon Roy G. | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
US6370796B1 (en) | 2000-09-29 | 2002-04-16 | Sony Corporation | Heater block cooling system for wafer processing apparatus |
USD457609S1 (en) | 2000-09-29 | 2002-05-21 | American Standard International Inc. | Shower plate |
USD461882S1 (en) | 2000-09-29 | 2002-08-20 | American Standard International Inc. | Shower plate |
US20020079714A1 (en) | 2000-10-02 | 2002-06-27 | Soucy Alan J. | Apparatus and methods for handling semiconductor wafers |
US6662817B2 (en) | 2000-10-04 | 2003-12-16 | Asm Japan K.K. | Gas-line system for semiconductor-manufacturing apparatus |
US6745095B1 (en) | 2000-10-04 | 2004-06-01 | Applied Materials, Inc. | Detection of process endpoint through monitoring fluctuation of output data |
KR20020027695A (en) | 2000-10-04 | 2002-04-15 | 박종섭 | Method of forming dielectric layer in semiconductor device |
JP2002118066A (en) | 2000-10-06 | 2002-04-19 | Toshiba Ceramics Co Ltd | Gas inlet pipe for semiconductor heat treatment oven |
US20020115252A1 (en) | 2000-10-10 | 2002-08-22 | Haukka Suvi P. | Dielectric interface films and methods therefor |
US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
US20020047705A1 (en) | 2000-10-20 | 2002-04-25 | Mitsuo Tada | Frequency measuring device, polishing device using the same and eddy current sensor |
US6395650B1 (en) | 2000-10-23 | 2002-05-28 | International Business Machines Corporation | Methods for forming metal oxide layers with enhanced purity |
US6645304B2 (en) | 2000-10-23 | 2003-11-11 | Ngk Insulators, Ltd. | Susceptors for semiconductor-producing apparatuses |
US6743475B2 (en) | 2000-10-23 | 2004-06-01 | Asm International N.V. | Process for producing aluminum oxide films at low temperatures |
US6688784B1 (en) | 2000-10-25 | 2004-02-10 | Advanced Micro Devices, Inc. | Parallel plate development with multiple holes in top plate for control of developer flow and pressure |
US6824665B2 (en) | 2000-10-25 | 2004-11-30 | Shipley Company, L.L.C. | Seed layer deposition |
US20020050648A1 (en) | 2000-10-26 | 2002-05-02 | Takenobu Kishida | Semiconductor device and method for fabricating the same |
US20020079056A1 (en) | 2000-10-26 | 2002-06-27 | Hiroyuki Kudo | Substrate processing unit |
US6445574B1 (en) | 2000-10-30 | 2002-09-03 | Motorola, Inc. | Electronic device |
US6498091B1 (en) | 2000-11-01 | 2002-12-24 | Applied Materials, Inc. | Method of using a barrier sputter reactor to remove an underlying barrier layer |
US20030173490A1 (en) | 2000-11-03 | 2003-09-18 | Applied Materials, Inc. | Facilities connection box for pre-facilitation of wafer fabrication equipment |
US20020076944A1 (en) | 2000-11-09 | 2002-06-20 | Wang Qing Min | Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film |
US20030205237A1 (en) | 2000-11-20 | 2003-11-06 | Tokyo Electron Limited | Method of cleaning processing chamber of semiconductor processing apparatus |
US6483989B1 (en) | 2000-11-21 | 2002-11-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device producing method |
US6689220B1 (en) | 2000-11-22 | 2004-02-10 | Simplus Systems Corporation | Plasma enhanced pulsed layer deposition |
US20020098627A1 (en) | 2000-11-24 | 2002-07-25 | Pomarede Christophe F. | Surface preparation prior to deposition |
US20040121620A1 (en) | 2000-11-24 | 2004-06-24 | Pomarede Christophe F. | Surface preparation prior to deposition |
US20020064592A1 (en) | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
US6540838B2 (en) | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
KR100688484B1 (en) | 2000-11-30 | 2007-02-28 | 삼성전자주식회사 | Apparatus of treating substrate using activated oxygen and method thereof |
JP2002170781A (en) | 2000-11-30 | 2002-06-14 | Tokyo Electron Ltd | Heat-treating device |
US20020069222A1 (en) | 2000-12-01 | 2002-06-06 | Wiznet, Inc. | System and method for placing active tags in HTML document |
US20020123200A1 (en) | 2000-12-04 | 2002-09-05 | Naoko Yamamoto | Plasma processing apparatus |
US6913152B2 (en) | 2000-12-04 | 2005-07-05 | Peter Zuk, Jr. | Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples |
US20020124906A1 (en) | 2000-12-04 | 2002-09-12 | Yoko Suzuki | Substrate transport apparatus, POD and method |
JP2002237375A (en) | 2000-12-05 | 2002-08-23 | Ibiden Co Ltd | Ceramic plate for semiconductor manufacturing/testing device, and manufacturing method of the same |
US20040219793A1 (en) | 2000-12-05 | 2004-11-04 | Shingo Hishiya | Method and apparatus for treating article to be treated |
US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US20020197402A1 (en) | 2000-12-06 | 2002-12-26 | Chiang Tony P. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US20110017139A1 (en) | 2000-12-06 | 2011-01-27 | Novellus Systems, Inc. | System for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (MII-ALD) |
US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US6468924B2 (en) | 2000-12-06 | 2002-10-22 | Samsung Electronics Co., Ltd. | Methods of forming thin films by atomic layer deposition |
US20020068458A1 (en) | 2000-12-06 | 2002-06-06 | Chiang Tony P. | Method for integrated in-situ cleaning and susequent atomic layer deposition within a single processing chamber |
US6413321B1 (en) | 2000-12-07 | 2002-07-02 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination on wafer backside during CVD process |
US6576564B2 (en) | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
US7238616B2 (en) | 2000-12-07 | 2007-07-03 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
US6930041B2 (en) | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
US7183229B2 (en) | 2000-12-08 | 2007-02-27 | Sony Corporation | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
US7482283B2 (en) | 2000-12-12 | 2009-01-27 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
US20050051100A1 (en) | 2000-12-15 | 2005-03-10 | Chiang Tony P. | Variable gas conductance control for a process chamber |
US20020076507A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20020076490A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Variable gas conductance control for a process chamber |
US20020109115A1 (en) | 2000-12-15 | 2002-08-15 | Nor-Cal Products, Inc. | Pressure controller and method |
US20020136909A1 (en) | 2000-12-20 | 2002-09-26 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
US6544906B2 (en) | 2000-12-21 | 2003-04-08 | Texas Instruments Incorporated | Annealing of high-k dielectric materials |
US20120252229A1 (en) | 2000-12-21 | 2012-10-04 | Mattson Technology, Inc. | System and Process For Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy |
US20020081826A1 (en) | 2000-12-21 | 2002-06-27 | Rotondaro Antonio L. P. | Annealing of high-K dielectric materials |
US20030049580A1 (en) | 2000-12-22 | 2003-03-13 | Goodman Matthew G. | Susceptor pocket profile to improve process performance |
US20020152244A1 (en) | 2000-12-22 | 2002-10-17 | International Business Machines Corporation | Method and apparatus to dynamically create a customized user interface based on a document type definition |
US20020151327A1 (en) | 2000-12-22 | 2002-10-17 | David Levitt | Program selector and guide system and method |
US20080277715A1 (en) | 2000-12-28 | 2008-11-13 | Tadahiro Ohmi | Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device |
US20020086501A1 (en) | 2000-12-29 | 2002-07-04 | O'donnell Robert J. | Diamond coatings on reactor wall and method of manufacturing thereof |
US6398184B1 (en) | 2000-12-29 | 2002-06-04 | General Signal Corporation | Lock device and lock method for knife gate valves |
US20020094378A1 (en) | 2000-12-29 | 2002-07-18 | O'donnell Robert J. | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
US7172497B2 (en) | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
US20020132408A1 (en) | 2001-01-12 | 2002-09-19 | Ce Ma | Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film |
US6503079B2 (en) | 2001-01-15 | 2003-01-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US6583048B2 (en) | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US20040095074A1 (en) | 2001-01-18 | 2004-05-20 | Nobuo Ishii | Plasma device and plasma generating method |
US20040009679A1 (en) | 2001-01-19 | 2004-01-15 | Yeo Jae-Hyun | Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
US20040142577A1 (en) | 2001-01-22 | 2004-07-22 | Takuya Sugawara | Method for producing material of electronic device |
US7235137B2 (en) | 2001-01-23 | 2007-06-26 | Tokyo Electron Limited | Conductor treating single-wafer type treating device and method for semi-conductor treating |
US20040048452A1 (en) | 2001-01-25 | 2004-03-11 | Takuya Sugawara | Method of producing electronic device material |
JP2007027777A (en) | 2001-01-25 | 2007-02-01 | Tokyo Electron Ltd | Method of manufacturing electron device material |
US20040048492A1 (en) | 2001-01-26 | 2004-03-11 | Applied Materials, Inc. | Apparatus for reducing plasma charge damage for plasma processes |
US6660662B2 (en) | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US20030024901A1 (en) | 2001-01-26 | 2003-02-06 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US7036453B2 (en) | 2001-01-26 | 2006-05-02 | Applied Materials, Inc. | Apparatus for reducing plasma charge damage for plasma processes |
KR20020064028A (en) | 2001-01-31 | 2002-08-07 | 한빛 세마텍(주) | Cleaning and surface treatment equipment by pulsed ultra-violet light radiation |
US20050151184A1 (en) | 2001-02-02 | 2005-07-14 | Lee Jong-Ho | Dielectric layer for semiconductor device and method of manufacturing the same |
US20020106909A1 (en) | 2001-02-07 | 2002-08-08 | Hitoshi Kato | Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method |
US20020184111A1 (en) | 2001-02-07 | 2002-12-05 | Exalt Solutions, Inc. | Intelligent multimedia e-catalog |
US20050120962A1 (en) | 2001-02-08 | 2005-06-09 | Joichi Ushioda | Substrate supporting table, method for producing same, and processing system |
US6846742B2 (en) | 2001-02-08 | 2005-01-25 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
US20020134511A1 (en) | 2001-02-08 | 2002-09-26 | Joichi Ushioda | Substrate supporting table,method for producing same, and processing system |
US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
US20030211735A1 (en) | 2001-02-08 | 2003-11-13 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
JP2005033221A (en) | 2001-02-08 | 2005-02-03 | Tokyo Electron Ltd | Substrate mounting stand and processor |
US20020146512A1 (en) | 2001-02-08 | 2002-10-10 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
US6743738B2 (en) | 2001-02-12 | 2004-06-01 | Asm America, Inc. | Dopant precursors and processes |
US20020108670A1 (en) | 2001-02-12 | 2002-08-15 | Baker John Eric | High purity chemical container with external level sensor and removable dip tube |
US20020112114A1 (en) | 2001-02-13 | 2002-08-15 | Blair William R. | Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type |
US20020110991A1 (en) | 2001-02-13 | 2002-08-15 | Micron Technology, Inc. | Sequential pulse deposition |
US20040099635A1 (en) | 2001-02-15 | 2004-05-27 | Tokyo Electron Limited | Method and apparatus for processing workpiece |
US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
US6755221B2 (en) | 2001-02-22 | 2004-06-29 | Samsung Electronics Co., Ltd. | Load port of a semiconductor manufacturing apparatus having integrated kinematic coupling pins and sensors, and method of loading wafers using the same |
US20020117113A1 (en) | 2001-02-27 | 2002-08-29 | Tokyo Electron Limited | Substrate processing apparatus |
US20020160112A1 (en) | 2001-02-28 | 2002-10-31 | Japan Pionics Co., Ltd | Chemical vapor deposition apparatus and chemical vapor deposition method |
US20020121312A1 (en) * | 2001-03-01 | 2002-09-05 | Dmitry Lubomirsky | Lift pin alignment and operation methods and apparatus |
US20020122885A1 (en) | 2001-03-01 | 2002-09-05 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US20050229972A1 (en) | 2001-03-05 | 2005-10-20 | George Hoshi | Fluid controller |
US20020123237A1 (en) | 2001-03-05 | 2002-09-05 | Tue Nguyen | Plasma pulse semiconductor processing system and method |
US20020127350A1 (en) | 2001-03-07 | 2002-09-12 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
US6447651B1 (en) | 2001-03-07 | 2002-09-10 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
US6939579B2 (en) | 2001-03-07 | 2005-09-06 | Asm International N.V. | ALD reactor and method with controlled wall temperature |
US20020157611A1 (en) | 2001-03-07 | 2002-10-31 | Niklas Bondestam | ALD reactor and method with controlled wall temperature |
US7111232B1 (en) | 2001-03-07 | 2006-09-19 | Thomas Layne Bascom | Method and system for making document objects available to users of a network |
US20020127956A1 (en) | 2001-03-12 | 2002-09-12 | Jalal Ashjaee | Method of sealing wafer backside for full-face electrochemical plating |
US20030008602A1 (en) | 2001-03-12 | 2003-01-09 | Jalal Ashjaee | Method and apparatus of sealing wafer backside for full-face electrochemical plating |
US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
US20020129768A1 (en) | 2001-03-15 | 2002-09-19 | Carpenter Craig M. | Chemical vapor deposition apparatuses and deposition methods |
US20020164423A1 (en) | 2001-03-19 | 2002-11-07 | Chiang Tony P. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6861642B2 (en) | 2001-03-26 | 2005-03-01 | Ebara Corporation | Neutral particle beam processing apparatus |
US6849857B2 (en) | 2001-03-26 | 2005-02-01 | Ebara Corporation | Beam processing apparatus |
US20060118241A1 (en) | 2001-03-28 | 2006-06-08 | Tadahiro Ohmi & Tokyo Electron Limited | Plasma processing apparatus |
US20030168008A1 (en) | 2001-03-28 | 2003-09-11 | Tadahiro Ohmi | Plasma processing device |
US6716571B2 (en) | 2001-03-28 | 2004-04-06 | Advanced Micro Devices, Inc. | Selective photoresist hardening to facilitate lateral trimming |
US6583572B2 (en) | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
US20020139775A1 (en) | 2001-03-30 | 2002-10-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer |
TW540093B (en) | 2001-04-05 | 2003-07-01 | Angstron Systems Inc | Atomic layer deposition system and method |
US20030124820A1 (en) | 2001-04-12 | 2003-07-03 | Johnsgard Kristian E. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
US6448192B1 (en) | 2001-04-16 | 2002-09-10 | Motorola, Inc. | Method for forming a high dielectric constant material |
US6521295B1 (en) | 2001-04-17 | 2003-02-18 | Pilkington North America, Inc. | Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby |
US6482331B2 (en) | 2001-04-18 | 2002-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing contamination in a plasma process chamber |
US6767447B2 (en) | 2001-04-18 | 2004-07-27 | Premelec Electrode Ltd. | Electrolytic cell for hydrogen peroxide production and process for producing hydrogen peroxide |
US20020155708A1 (en) | 2001-04-18 | 2002-10-24 | Guo-Qiang Lo | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean |
TW538327B (en) | 2001-04-24 | 2003-06-21 | Unit Instr Inc | System and method for a mass flow controller |
US6753507B2 (en) | 2001-04-27 | 2004-06-22 | Kyocera Corporation | Wafer heating apparatus |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US6528430B2 (en) | 2001-05-01 | 2003-03-04 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 |
US6864041B2 (en) | 2001-05-02 | 2005-03-08 | International Business Machines Corporation | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching |
US7897215B1 (en) | 2001-05-03 | 2011-03-01 | Novellus Systems, Inc. | Sequential UV induced chemical vapor deposition |
US6720260B1 (en) | 2001-05-03 | 2004-04-13 | Novellus Systems, Inc. | Sequential electron induced chemical vapor deposition |
US6627268B1 (en) | 2001-05-03 | 2003-09-30 | Novellus Systems, Inc. | Sequential ion, UV, and electron induced chemical vapor deposition |
US20020168870A1 (en) | 2001-05-09 | 2002-11-14 | Nobuo Matsuki | Method of forming low dielectric constant insulation film for semiconductor device |
KR20020086763A (en) | 2001-05-10 | 2002-11-20 | 주식회사 엘지이아이 | Thermocouple for continuous polymerizing system using plasma |
US20020187656A1 (en) | 2001-05-11 | 2002-12-12 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US20030159656A1 (en) | 2001-05-11 | 2003-08-28 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US6929700B2 (en) | 2001-05-11 | 2005-08-16 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US6596653B2 (en) | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
JP2003053688A (en) | 2001-05-15 | 2003-02-26 | Fanuc Robotics North America Inc | Robot system having teach pendant |
US20040126213A1 (en) | 2001-05-18 | 2004-07-01 | Arthur Pelzmann | Device for accommodating disk-shaped objects and apparatus for handling objects |
US20020172768A1 (en) | 2001-05-21 | 2002-11-21 | Nec Corporation | Method for vapor deposition of a metal compound film |
US6528767B2 (en) | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
US20040202786A1 (en) | 2001-05-22 | 2004-10-14 | Novellus Systems, Inc. | Method of forming low-resistivity tungsten interconnects |
US20030003635A1 (en) | 2001-05-23 | 2003-01-02 | Paranjpe Ajit P. | Atomic layer deposition for fabricating thin films |
US20050109461A1 (en) | 2001-05-24 | 2005-05-26 | Sheng Sun | Chamber cleaning via rapid thermal process during a cleaning period |
US20020181612A1 (en) | 2001-05-29 | 2002-12-05 | Motorola, Inc. | Monolithic, software-definable circuit including a power amplifier and method for use therewith |
US20030029475A1 (en) | 2001-06-01 | 2003-02-13 | Applied Materials, Inc., A Delaware Corporation | Multistep remote plasma clean process |
US20020179011A1 (en) | 2001-06-05 | 2002-12-05 | Rajanikant Jonnalagadda | Gas port sealing for CVD/CVI furnace hearth plates |
US20030015596A1 (en) | 2001-06-05 | 2003-01-23 | Evans Richard O. | Mixing fluid streams |
US20050090123A1 (en) | 2001-06-08 | 2005-04-28 | Kazuaki Nishimura | Thin film forming apparatus cleaning method |
US6955928B1 (en) | 2001-06-18 | 2005-10-18 | Advanced Micro Devices, Inc. | Closed loop residual gas analyzer process control technique |
US6472266B1 (en) | 2001-06-18 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Method to reduce bit line capacitance in cub drams |
US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US6734631B2 (en) | 2001-06-20 | 2004-05-11 | Koninklijke Philips Electronics N.V. | Low-pressure gas discharge lamp with phosphor coating |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6658933B2 (en) | 2001-06-22 | 2003-12-09 | Clesse Industries | Fill-level indicator for a liquefied-petroleum-gas tank |
US6514313B1 (en) | 2001-06-22 | 2003-02-04 | Aeronex, Inc. | Gas purification system and method |
US20030002562A1 (en) | 2001-06-27 | 2003-01-02 | Yerlikaya Y. Denis | Temperature probe adapter |
US20030003719A1 (en) | 2001-06-28 | 2003-01-02 | Lim Bi O. | Method and apparatus for manufacturing a barrier layer of semiconductor device |
US6420279B1 (en) | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
US20030003607A1 (en) | 2001-06-29 | 2003-01-02 | Akira Kagoshima | Disturbance-free, recipe-controlled plasma processing system and method |
US20030000647A1 (en) | 2001-06-29 | 2003-01-02 | Applied Materials, Inc. | Substrate processing chamber |
US20030003696A1 (en) | 2001-06-29 | 2003-01-02 | Avgerinos Gelatos | Method and apparatus for tuning a plurality of processing chambers |
US20090120580A1 (en) | 2001-06-29 | 2009-05-14 | Akira Kagoshima | Disturbance-Free, Recipe-Controlled Plasma Processing System And Method |
US20030075925A1 (en) | 2001-07-03 | 2003-04-24 | Sven Lindfors | Source chemical container assembly |
US6889864B2 (en) | 2001-07-03 | 2005-05-10 | Asm International, Nv | Source chemical container assembly |
US20030013314A1 (en) | 2001-07-06 | 2003-01-16 | Chentsau Ying | Method of reducing particulates in a plasma etch chamber during a metal etch process |
DE10133013A1 (en) | 2001-07-06 | 2003-01-23 | Karlsruhe Forschzent | Barrier lock, to give a controlled released of a liquid sample from a reservoir, has a thin membrane covering the substrate and the holding recesses, with a heater wire to open the membrane through an electrical current signal |
US20040214445A1 (en) | 2001-07-10 | 2004-10-28 | Akitaka Shimizu | Dry etching method |
US6746308B1 (en) | 2001-07-11 | 2004-06-08 | Advanced Micro Devices, Inc. | Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same |
US20030017265A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US20030010355A1 (en) | 2001-07-13 | 2003-01-16 | Applied Materials, Inc | Enhanced remote plasma cleaning |
US6838122B2 (en) | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US20040185177A1 (en) | 2001-07-13 | 2004-09-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US7208198B2 (en) | 2001-07-13 | 2007-04-24 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US20040241322A1 (en) | 2001-07-13 | 2004-12-02 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6982103B2 (en) | 2001-07-13 | 2006-01-03 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6872258B2 (en) | 2001-07-16 | 2005-03-29 | Samsung Electronics Co., Ltd. | Shower head of a wafer treatment apparatus having a gap controller |
US20050145338A1 (en) | 2001-07-16 | 2005-07-07 | Samsung Electronics Co., Ltd. | Shower head of a wafer treatment apparatus having a gap controller |
US20030010452A1 (en) | 2001-07-16 | 2003-01-16 | Jong-Chul Park | Shower head of a wafer treatment apparatus having a gap controller |
US20030010451A1 (en) | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20030017268A1 (en) | 2001-07-18 | 2003-01-23 | Applied Materials, Inc. | .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity |
US20030022468A1 (en) | 2001-07-19 | 2003-01-30 | Yoshimi Shioya | Manufacturing method of semiconductor device |
US20050062773A1 (en) | 2001-07-20 | 2005-03-24 | Gemplus | Pressure regulation by transfer of a calibrated gas volume |
US6712949B2 (en) | 2001-07-22 | 2004-03-30 | The Electrosynthesis Company, Inc. | Electrochemical synthesis of hydrogen peroxide |
US20030025146A1 (en) | 2001-07-23 | 2003-02-06 | Pravin Narwankar | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
JP2003035574A (en) | 2001-07-23 | 2003-02-07 | Mitsubishi Heavy Ind Ltd | Responsive sensor and application measurement system |
US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
US6638839B2 (en) | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
US20030023338A1 (en) | 2001-07-27 | 2003-01-30 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6435865B1 (en) | 2001-07-30 | 2002-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for positioning gas injectors in a vertical furnace |
US20050020071A1 (en) | 2001-07-31 | 2005-01-27 | Jun Sonobe | Method and apparatus for cleaning and method and apparatus for etching |
US20050003600A1 (en) | 2001-08-01 | 2005-01-06 | Shigeru Kasai | Gas treating device and gas treating method |
US20080210278A1 (en) | 2001-08-02 | 2008-09-04 | Takehiko Orii | Substrate processing apparatus |
US20030026904A1 (en) | 2001-08-03 | 2003-02-06 | Applied Materials, Inc. | Susceptor shaft vacuum pumping |
US20030072882A1 (en) | 2001-08-03 | 2003-04-17 | Jaakko Niinisto | Method of depositing rare earth oxide thin films |
US20040231799A1 (en) | 2001-08-06 | 2004-11-25 | Lee Chun Soo | Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof |
US20030040841A1 (en) | 2001-08-06 | 2003-02-27 | Seminet Inc. | Robotic storage buffer system for substrate carrier pods |
US6955741B2 (en) | 2001-08-08 | 2005-10-18 | Asm Japan K.K. | Semiconductor-processing reaction chamber |
US20030029303A1 (en) | 2001-08-09 | 2003-02-13 | Yutaka Hasegawa | Electronic musical instrument with customization of auxiliary capability |
US20030032297A1 (en) | 2001-08-09 | 2003-02-13 | Lindstrom L. Karsten V. | Method to GaAs based lasers and a GaAs based laser |
US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
US7084079B2 (en) | 2001-08-10 | 2006-08-01 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
US20030029381A1 (en) | 2001-08-10 | 2003-02-13 | Michio Nishibayashi | Vertical chemical vapor deposition system |
US20030029563A1 (en) | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
US20070107845A1 (en) | 2001-08-14 | 2007-05-17 | Shigeru Ishizawa | Semiconductor processing system |
US20030035002A1 (en) | 2001-08-15 | 2003-02-20 | Samsung Electronics Co., Ltd. | Alternate interpretation of markup language documents |
US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
US20050092249A1 (en) | 2001-08-15 | 2005-05-05 | Olli Kilpela | Atomic layer deposition reactor |
US20030040158A1 (en) | 2001-08-21 | 2003-02-27 | Nec Corporation | Semiconductor device and method of fabricating the same |
US6924078B2 (en) | 2001-08-24 | 2005-08-02 | Hynix Semiconductor Inc. | Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion |
US20030040196A1 (en) | 2001-08-27 | 2003-02-27 | Lim Jung Wook | Method of forming insulation layer in semiconductor devices for controlling the composition and the doping concentration |
US20030037800A1 (en) | 2001-08-27 | 2003-02-27 | Applied Materials, Inc. | Method for removing contamination particles from substrate processing chambers |
US20030041971A1 (en) | 2001-08-28 | 2003-03-06 | Nec Corporation | Substrate processing system for performing exposure process in gas atmosphere |
US20030045961A1 (en) | 2001-08-31 | 2003-03-06 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
US6722837B2 (en) | 2001-08-31 | 2004-04-20 | Daifuku Co., Ltd. | Load storage equipment |
US6846146B2 (en) | 2001-08-31 | 2005-01-25 | Daifuku Co., Ltd. | Load storage equipment |
US6686281B2 (en) | 2001-09-05 | 2004-02-03 | Hitachi Kokusai Electric Inc. | Method for fabricating a semiconductor device and a substrate processing apparatus |
US20030049937A1 (en) | 2001-09-05 | 2003-03-13 | Naoki Suzuki | Apparatus and method for surface treatment to substrate |
US6521547B1 (en) | 2001-09-07 | 2003-02-18 | United Microelectronics Corp. | Method of repairing a low dielectric constant material layer |
US20030077883A1 (en) | 2001-09-07 | 2003-04-24 | Naoto Ohtake | Deposition method, deposition apparatus, and semiconductor device |
US9708707B2 (en) | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
US20100285237A1 (en) | 2001-09-10 | 2010-11-11 | Tegal Corporation | Nanolayer deposition using bias power treatment |
US6756318B2 (en) | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
US20030049375A1 (en) | 2001-09-10 | 2003-03-13 | Tue Nguyen | Nanolayer thick film processing system and method |
US6863281B2 (en) | 2001-09-13 | 2005-03-08 | Sumitomo Osaka Cement Co., Ltd. | Chucking apparatus and production method for the same |
US6756085B2 (en) | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
US20030082296A1 (en) | 2001-09-14 | 2003-05-01 | Kai Elers | Metal nitride deposition by ALD with reduction pulse |
US7410666B2 (en) | 2001-09-14 | 2008-08-12 | Asm International N.V. | Metal nitride carbide deposition by ALD |
US6986914B2 (en) | 2001-09-14 | 2006-01-17 | Asm International N.V. | Metal nitride deposition by ALD with reduction pulse |
US20030054670A1 (en) | 2001-09-17 | 2003-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite microelectronic dielectric layer with inhibited crack susceptibility |
US20030057848A1 (en) | 2001-09-21 | 2003-03-27 | Mitsuhiro Yuasa | Plasma processing apparatus |
US20030059980A1 (en) | 2001-09-25 | 2003-03-27 | Ling Chen | Copper interconnect barrier layer structure and formation method |
US20030059535A1 (en) | 2001-09-25 | 2003-03-27 | Lee Luo | Cycling deposition of low temperature films in a cold wall single wafer process chamber |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US20030065413A1 (en) | 2001-10-01 | 2003-04-03 | William Liteplo | Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment |
US20040023516A1 (en) | 2001-10-02 | 2004-02-05 | Londergan Ana R. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
US20050212119A1 (en) | 2001-10-02 | 2005-09-29 | Shero Eric J | Incorporation of nitrogen into high k dielectric film |
US20030066826A1 (en) | 2001-10-05 | 2003-04-10 | Samsung Electronics Co., Ltd. | Apparatus for processing a substrate including a heating apparatus |
US20030070617A1 (en) | 2001-10-11 | 2003-04-17 | Yong-Il Kim | Atomic layer deposition apparatus and process using remote plasma |
US6656282B2 (en) | 2001-10-11 | 2003-12-02 | Moohan Co., Ltd. | Atomic layer deposition apparatus and process using remote plasma |
US6461436B1 (en) | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
US20030071015A1 (en) | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Etch process for etching microstructures |
US20030075107A1 (en) | 2001-10-24 | 2003-04-24 | Junichi Miyano | Apparatus and method for manufacturing semiconductor |
JP2003133300A (en) | 2001-10-26 | 2003-05-09 | Tokyo Electron Ltd | Apparatus and method for forming film |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US20080102203A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US20080102208A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US20030082307A1 (en) | 2001-10-26 | 2003-05-01 | Applied Materials, Inc. | Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application |
US20030121608A1 (en) | 2001-10-26 | 2003-07-03 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7780789B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Vortex chamber lids for atomic layer deposition |
JP2005507030A (en) | 2001-10-26 | 2005-03-10 | アプライド マテリアルズ インコーポレイテッド | Gas delivery device for atomic layer deposition |
US20050274323A1 (en) | 2001-10-29 | 2005-12-15 | Seidel Thomas E | Massively parallel atomic layer deposition/chemical vapor deposition system |
US20040253867A1 (en) | 2001-11-05 | 2004-12-16 | Shuzo Matsumoto | Circuit part connector structure and gasket |
US20050054198A1 (en) | 2001-11-05 | 2005-03-10 | Um Pyung Yong | Apparatus of chemical vapor deposition |
US6679194B2 (en) | 2001-11-08 | 2004-01-20 | Samsung Electronics Co., Ltd. | Cassette table of a semiconductor fabricating apparatus |
US20050034664A1 (en) | 2001-11-08 | 2005-02-17 | Koh Won Yong | Apparatus for depositing |
US20050037154A1 (en) | 2001-11-08 | 2005-02-17 | Koh Won Yong | Method for forming thin film |
US6975921B2 (en) | 2001-11-09 | 2005-12-13 | Asm International Nv | Graphical representation of a wafer processing process |
US20050033075A1 (en) | 2001-11-09 | 2005-02-10 | Yun Chi | Volatile noble metal organometallic complexes |
US6884319B2 (en) | 2001-11-12 | 2005-04-26 | Jusung Engineering Co., Ltd. | Susceptor of apparatus for manufacturing semiconductor device |
US20040010772A1 (en) | 2001-11-13 | 2004-01-15 | General Electric Company | Interactive method and system for faciliting the development of computer software applications |
US7205246B2 (en) | 2001-11-16 | 2007-04-17 | Aviza Technology Limited | Forming low k dielectric layers |
JP2003153706A (en) | 2001-11-20 | 2003-05-27 | Toyobo Co Ltd | Female material for hook-and-loop fastener and production method thereof |
US20030094133A1 (en) | 2001-11-21 | 2003-05-22 | Applied Materials, Inc. | Piezoelectric vaporizer |
US6683274B1 (en) | 2001-11-26 | 2004-01-27 | Junsung Engineering Co., Ltd. | Wafer susceptor |
USD461233S1 (en) | 2001-11-29 | 2002-08-06 | James Michael Whalen | Marine deck drain strainer |
US20050107627A1 (en) | 2001-11-30 | 2005-05-19 | Christian Dussarrat | Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof |
US20050017272A1 (en) | 2001-11-30 | 2005-01-27 | Kenya Yamashita | Semiconductor device and production method therefor |
US7017514B1 (en) | 2001-12-03 | 2006-03-28 | Novellus Systems, Inc. | Method and apparatus for plasma optimization in water processing |
US20030109107A1 (en) | 2001-12-06 | 2003-06-12 | Macronix International Co., Ltd. | Method for forming nitride spacer by using atomic layer deposition |
US20030170945A1 (en) | 2001-12-07 | 2003-09-11 | Tokyo Electron Limited | Radical processing of a sub-nanometer insulation film |
US20030113995A1 (en) | 2001-12-14 | 2003-06-19 | Applied Materials, Inc. | Method for depositing a low k dielectric film (k<3.5) for hard mask application |
US20030111963A1 (en) | 2001-12-14 | 2003-06-19 | Tolmachev Yuri Nikolaevich | Inductively coupled plasma system |
US7168852B2 (en) | 2001-12-17 | 2007-01-30 | Sintercast Ab | Method and a device for thermal analysis of cast iron |
US20030111013A1 (en) | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
US6841201B2 (en) | 2001-12-21 | 2005-01-11 | The Procter & Gamble Company | Apparatus and method for treating a workpiece using plasma generated from microwave radiation |
US20050026402A1 (en) | 2001-12-21 | 2005-02-03 | Holger Jurgensen | Method and device for depositing crystalline layers on crystalline substrates |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US6955836B2 (en) | 2001-12-25 | 2005-10-18 | Anelva Corporation | Silicon oxide film formation method |
US20030124792A1 (en) | 2001-12-27 | 2003-07-03 | Samsung Electronics Co., Ltd. | Methods for fabricating semiconductor devices having capacitors |
US20030124842A1 (en) | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
US20030124818A1 (en) | 2001-12-28 | 2003-07-03 | Applied Materials, Inc. | Method and apparatus for forming silicon containing films |
US6497734B1 (en) | 2002-01-02 | 2002-12-24 | Novellus Systems, Inc. | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput |
US20040187928A1 (en) | 2002-01-04 | 2004-09-30 | Jesse Ambrosina | Mass flow ratio system and method |
US20030127049A1 (en) | 2002-01-08 | 2003-07-10 | Applied Materials, Inc. | Process chamber having component with yttrium-aluminum coating |
US20080223725A1 (en) | 2002-01-08 | 2008-09-18 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US20030132319A1 (en) | 2002-01-15 | 2003-07-17 | Hytros Mark M. | Showerhead assembly for a processing chamber |
US20050095770A1 (en) | 2002-01-15 | 2005-05-05 | Takeshi Kumagai | Cvd method and device for forming silicon-containing insulation film |
US6580050B1 (en) | 2002-01-16 | 2003-06-17 | Pace, Incorporated | Soldering station with built-in self-calibration function |
US20030133854A1 (en) | 2002-01-17 | 2003-07-17 | Mitsubishi Denki Kabushiki Kaisha | System for supplying a gas and method of supplying a gas |
US20030180458A1 (en) | 2002-01-17 | 2003-09-25 | Sundew Technologies, Llc | ALD apparatus and method |
US6911092B2 (en) | 2002-01-17 | 2005-06-28 | Sundew Technologies, Llc | ALD apparatus and method |
US20030150386A1 (en) | 2002-01-17 | 2003-08-14 | Hitachi Kokusai Electric, Inc. | Apparatus for fabricating a semiconductor device |
US6760981B2 (en) | 2002-01-18 | 2004-07-13 | Speedline Technologies, Inc. | Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation |
US20030140851A1 (en) | 2002-01-25 | 2003-07-31 | Applied Materials, Inc. | Gas distribution showerhead |
US20030221780A1 (en) | 2002-01-26 | 2003-12-04 | Lei Lawrence C. | Clamshell and small volume chamber with fixed substrate support |
US20050139160A1 (en) | 2002-01-26 | 2005-06-30 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US20030143328A1 (en) | 2002-01-26 | 2003-07-31 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20030141820A1 (en) | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
US20030141527A1 (en) | 2002-01-30 | 2003-07-31 | Joo Heung-Jin | Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same |
US20030157432A1 (en) | 2002-01-31 | 2003-08-21 | Jorg Rottstegge | Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties |
US7115305B2 (en) | 2002-02-01 | 2006-10-03 | California Institute Of Technology | Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials |
KR100377095B1 (en) | 2002-02-01 | 2003-03-20 | Nexo Co Ltd | Semiconductor fabrication apparatus using low energy plasma |
US20080264443A1 (en) | 2002-02-05 | 2008-10-30 | Novellus Systems, Inc. | Apparatus and methods for increasing the rate of solute concentration evolution in a supercritical process chamber |
US6985788B2 (en) | 2002-02-06 | 2006-01-10 | Asm International Nv | Method and system to process semiconductor wafers |
US20030149506A1 (en) | 2002-02-06 | 2003-08-07 | Asm International Nv | Method and system to process semiconductor wafers |
US6732006B2 (en) | 2002-02-06 | 2004-05-04 | Asm International Nv | Method and system to process semiconductor wafers |
US6899507B2 (en) | 2002-02-08 | 2005-05-31 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
US7021881B2 (en) | 2002-02-08 | 2006-04-04 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
US20030153177A1 (en) | 2002-02-11 | 2003-08-14 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US20050056218A1 (en) | 2002-02-14 | 2005-03-17 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
US6734090B2 (en) | 2002-02-20 | 2004-05-11 | International Business Machines Corporation | Method of making an edge seal for a semiconductor device |
US20030157436A1 (en) | 2002-02-20 | 2003-08-21 | Dirk Manger | Method for forming a hard mask in a layer on a planar device |
US20030168948A1 (en) | 2002-02-21 | 2003-09-11 | Takayuki Yamagishi | Semiconductor manufacturing equipment and maintenance method |
US6876191B2 (en) | 2002-02-25 | 2005-04-05 | Asm International N.V. | Apparatus for treating wafers, provided with a sensor box |
US20020164420A1 (en) | 2002-02-25 | 2002-11-07 | Derderian Garo J. | Deposition methods and apparatus for improved delivery of metastable species |
US6766545B2 (en) | 2002-02-27 | 2004-07-27 | B. Eugene Hodges | Shower drain |
US20050063451A1 (en) | 2002-02-28 | 2005-03-24 | Shin-Etsu Handotai Co., Ltd | Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device |
US20060249253A1 (en) | 2002-02-28 | 2006-11-09 | Micron Technology, Inc. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US20030159653A1 (en) | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US20030170583A1 (en) | 2002-03-01 | 2003-09-11 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and a method for fabricating substrates |
US20030168699A1 (en) | 2002-03-05 | 2003-09-11 | Tatsuya Honda | Transistor |
US6815350B2 (en) | 2002-03-05 | 2004-11-09 | Samsung Electronics Co., Ltd. | Method for forming a thin film using an atomic layer deposition (ALD) process |
US20030168012A1 (en) | 2002-03-07 | 2003-09-11 | Hitoshi Tamura | Plasma processing device and plasma processing method |
US20030210901A1 (en) | 2002-03-07 | 2003-11-13 | Donald James J. | Pyrometer calibrated wafer temperature estimator |
US20030168001A1 (en) | 2002-03-08 | 2003-09-11 | Sundew Technologies, Llc | ALD method and apparatus |
US20030168174A1 (en) | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
US20030168750A1 (en) | 2002-03-11 | 2003-09-11 | Cem Basceri | MIM capacitor with metal nitride electrode materials and method of formation |
US7234476B2 (en) | 2002-03-11 | 2007-06-26 | Asm Japan K.K. | Method of cleaning CVD equipment processing chamber |
US6776849B2 (en) | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US6746240B2 (en) | 2002-03-15 | 2004-06-08 | Asm International N.V. | Process tube support sleeve with circumferential channels |
US6835039B2 (en) | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
US6902395B2 (en) | 2002-03-15 | 2005-06-07 | Asm International, N.V. | Multilevel pedestal for furnace |
US20040056017A1 (en) | 2002-03-18 | 2004-03-25 | Renken Wayne Glenn | System and method for heating and cooling wafer at accelerated rates |
US20030176074A1 (en) | 2002-03-18 | 2003-09-18 | Applied Materials, Inc. | Tandem etch chamber plasma processing system |
US20050141591A1 (en) | 2002-03-20 | 2005-06-30 | Kazuhito Sakano | Temperature measuring device and temperature measuring method |
US20030181065A1 (en) | 2002-03-21 | 2003-09-25 | O'donnell Robert J. | Low contamination components for semiconductor processing apparatus and methods for making components |
US8318327B2 (en) | 2002-03-21 | 2012-11-27 | Lam Research Corporation | Low contamination components for semiconductor processing apparatus and methods for making components |
US20030178145A1 (en) | 2002-03-25 | 2003-09-25 | Applied Materials, Inc. | Closed hole edge lift pin and susceptor for wafer process chambers |
US20030183156A1 (en) | 2002-03-26 | 2003-10-02 | Dando Ross S. | Chemical vapor deposition methods, atomic layer deposition methods, and valve assemblies for use with a reactive precursor in semiconductor processing |
US6825134B2 (en) | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
US20050074983A1 (en) | 2002-03-26 | 2005-04-07 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method, high speed rotary valve, and cleaning method |
US8038835B2 (en) | 2002-03-27 | 2011-10-18 | Tokyo Electron Limited | Processing device, electrode, electrode plate, and processing method |
US20030183856A1 (en) | 2002-03-28 | 2003-10-02 | Karsten Wieczorek | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
US20110281417A1 (en) | 2002-03-28 | 2011-11-17 | Gordon Roy G | Vapor deposition of silicon dioxide nanolaminates |
US20050112282A1 (en) | 2002-03-28 | 2005-05-26 | President And Fellows Of Harvard College | Vapor deposition of silicon dioxide nanolaminates |
US6883733B1 (en) | 2002-03-28 | 2005-04-26 | Novellus Systems, Inc. | Tapered post, showerhead design to improve mixing on dual plenum showerheads |
US20050034674A1 (en) | 2002-03-29 | 2005-02-17 | Tokyo Electron Limited | Processing apparatus for object to be processed and processing method using same |
US6594550B1 (en) | 2002-03-29 | 2003-07-15 | Asm America, Inc. | Method and system for using a buffer to track robotic movement |
US20030231698A1 (en) | 2002-03-29 | 2003-12-18 | Takatomo Yamaguchi | Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus |
US20050161434A1 (en) | 2002-03-29 | 2005-07-28 | Tokyo Electron Limited | Method for forming insulation film |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US20040025786A1 (en) | 2002-04-05 | 2004-02-12 | Tadashi Kontani | Substrate processing apparatus and reaction container |
US20030188685A1 (en) | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
US20030190804A1 (en) | 2002-04-09 | 2003-10-09 | Glenn W. Benjamin | Simultaneous cyclical deposition in different processing regions |
US20030213435A1 (en) | 2002-04-11 | 2003-11-20 | Kazuyuki Okuda | Vertical type semiconductor device producing apparatus |
JP2003303814A (en) | 2002-04-11 | 2003-10-24 | Matsushita Electric Works Ltd | Plasma treatment apparatus and method therefor |
US20030192875A1 (en) | 2002-04-12 | 2003-10-16 | Lisa Bieker | Heating jacket assembly with field replaceable thermostat |
US20080133154A1 (en) | 2002-04-12 | 2008-06-05 | Schneider Electric | System and Method for Detecting Non-Cathode Arcing in a Plasma Generation Apparatus |
US20030232497A1 (en) | 2002-04-16 | 2003-12-18 | Ming Xi | System and method for forming an integrated barrier layer |
US20110143032A1 (en) | 2002-04-17 | 2011-06-16 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants |
US6846515B2 (en) | 2002-04-17 | 2005-01-25 | Air Products And Chemicals, Inc. | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants |
US20050223982A1 (en) | 2002-04-19 | 2005-10-13 | Park Young H | Apparatus and method for depositing thin film on wafer using remote plasma |
US20040025787A1 (en) | 2002-04-19 | 2004-02-12 | Selbrede Steven C. | System for depositing a film onto a substrate using a low pressure gas precursor |
US20030200926A1 (en) | 2002-04-24 | 2003-10-30 | Dando Ross S. | Chemical vapor deposition apparatus |
US20040043544A1 (en) | 2002-04-25 | 2004-03-04 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
US20030201541A1 (en) | 2002-04-26 | 2003-10-30 | Younsoo Kim | Method for fabricating metal electrode with atomic layer deposition (ALD) in semiconductor device |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US20030207032A1 (en) | 2002-05-02 | 2003-11-06 | Micron Technology, Inc. | Methods, systems, and apparatus for atomic-layer deposition of aluminum oxides in integrated circuits |
US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US6928890B2 (en) | 2002-05-03 | 2005-08-16 | Caterpillar Inc | Method and apparatus for mixing gases |
US7100459B2 (en) | 2002-05-03 | 2006-09-05 | Caterpillar, Inc. | Method and apparatus for mixing gases |
US20040093963A1 (en) | 2002-05-03 | 2004-05-20 | Caterpillar, Inc. | Method and apparatus for mixing gases |
US20030205096A1 (en) | 2002-05-03 | 2003-11-06 | Gehner Gerrick S. | Method and apparatus for mixing gases |
US20040089078A1 (en) | 2002-05-03 | 2004-05-13 | Caterpillar, Inc. | Method and apparatus for mixing gases |
US6684719B2 (en) | 2002-05-03 | 2004-02-03 | Caterpillar Inc | Method and apparatus for mixing gases |
US20030205327A1 (en) | 2002-05-06 | 2003-11-06 | Howald Arthur M. | Apparatus and methods for minimizing arcing in a plasma processing chamber |
US7086347B2 (en) | 2002-05-06 | 2006-08-08 | Lam Research Corporation | Apparatus and methods for minimizing arcing in a plasma processing chamber |
US7611640B1 (en) | 2002-05-06 | 2009-11-03 | Lam Research Corporation | Minimizing arcing in a plasma processing chamber |
US20030209323A1 (en) | 2002-05-07 | 2003-11-13 | Nec Electronics Corporation | Production apparatus for manufacturing semiconductor device |
US20030209326A1 (en) | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
US20030209746A1 (en) | 2002-05-07 | 2003-11-13 | Hideki Horii | Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention and methods of forming same |
US20040168769A1 (en) | 2002-05-10 | 2004-09-02 | Takaaki Matsuoka | Plasma processing equipment and plasma processing method |
US8372204B2 (en) | 2002-05-13 | 2013-02-12 | Cree, Inc. | Susceptor for MOCVD reactor |
US7122844B2 (en) | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
US6682973B1 (en) | 2002-05-16 | 2004-01-27 | Advanced Micro Devices, Inc. | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications |
US20030213562A1 (en) | 2002-05-17 | 2003-11-20 | Applied Materials, Inc. | High density plasma CVD chamber |
US20030215963A1 (en) | 2002-05-17 | 2003-11-20 | Amrhein Fred | Plasma etch resistant coating and process |
US7211524B2 (en) | 2002-05-17 | 2007-05-01 | Hynix Semiconductor Inc. | Method of forming insulating layer in semiconductor device |
US20030219972A1 (en) | 2002-05-22 | 2003-11-27 | Green Martin L. | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
US20030217915A1 (en) | 2002-05-24 | 2003-11-27 | Luc Ouellet | Fabrication of microstructures with vacuum-sealed cavity |
KR20030092305A (en) | 2002-05-29 | 2003-12-06 | 삼성전자주식회사 | A MEAN MEASURING ON A TEMPERATURE OF A CHAMBER's OUTER WALL IN A MACHINE DEPOSITING HTUSG |
US6963052B2 (en) | 2002-06-05 | 2005-11-08 | Sumitomo Electric Industries, Ltd. | Heater module for semiconductor manufacturing equipment |
US20070212811A1 (en) | 2002-06-05 | 2007-09-13 | Applied Materials, Inc. | Low temperature CVD process with selected stress of the CVD layer on CMOS devices |
US20030228772A1 (en) | 2002-06-05 | 2003-12-11 | Cowans Kenneth W. | Lateral temperature equalizing system for large area surfaces during processing |
US20040238523A1 (en) | 2002-06-05 | 2004-12-02 | Akira Kuibira | Heater module for semiconductor production system |
US7442275B2 (en) | 2002-06-05 | 2008-10-28 | Advanced Thermal Sciences | Lateral temperature equalizing system for large area surfaces during processing |
US7393765B2 (en) | 2002-06-05 | 2008-07-01 | Applied Materials, Inc. | Low temperature CVD process with selected stress of the CVD layer on CMOS devices |
US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
US20060014384A1 (en) | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
US20050023624A1 (en) | 2002-06-05 | 2005-02-03 | Micron Technology, Inc. | Atomic layer-deposited HfAlO3 films for gate dielectrics |
US7195693B2 (en) | 2002-06-05 | 2007-03-27 | Advanced Thermal Sciences | Lateral temperature equalizing system for large area surfaces during processing |
JP2004014952A (en) | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | Processing system and processing method |
US20040062081A1 (en) | 2002-06-10 | 2004-04-01 | Drewes Joel A. | Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication |
US20050211167A1 (en) | 2002-06-10 | 2005-09-29 | Tokyo Electron Limited | Processing device and processing method |
US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US20070059948A1 (en) | 2002-06-14 | 2007-03-15 | Metzner Craig R | Ald metal oxide deposition process using direct oxidation |
US20030232511A1 (en) | 2002-06-14 | 2003-12-18 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US20030232138A1 (en) | 2002-06-17 | 2003-12-18 | Marko Tuominen | System for controlling the sublimation of reactants |
US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
US7851019B2 (en) | 2002-06-17 | 2010-12-14 | Asm International N.V. | Method for controlling the sublimation of reactants |
US20060024439A2 (en) | 2002-06-17 | 2006-02-02 | Asm International N.V. | System for controlling the sublimation of reactants |
US8309173B2 (en) | 2002-06-17 | 2012-11-13 | Asm International N.V. | System for controlling the sublimation of reactants |
US20030232491A1 (en) | 2002-06-18 | 2003-12-18 | Fujitsu Limited | Semiconductor device fabrication method |
US20050201908A1 (en) | 2002-06-18 | 2005-09-15 | Yasuo Nakamura | Reaction apparatus for producing silicon |
US20030234371A1 (en) | 2002-06-19 | 2003-12-25 | Ziegler Byron J. | Device for generating reactive ions |
US7005391B2 (en) | 2002-06-19 | 2006-02-28 | Samsung Electronics Co., Ltd. | Method of manufacturing inorganic nanotube |
JP2004023043A (en) | 2002-06-20 | 2004-01-22 | Toshiba Corp | Method and system for deposition and method for manufacturing semiconductor device |
US20050175789A1 (en) | 2002-06-23 | 2005-08-11 | Helms Jr Aubrey L. | Method for energy-assisted atomic layer deposition and removal |
US6552209B1 (en) | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
US20040002224A1 (en) | 2002-06-26 | 2004-01-01 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
US20040089236A1 (en) | 2002-06-28 | 2004-05-13 | Toshiba Ceramics Co., Ltd. | Semiconductor wafer treatment member |
JP2004088077A (en) | 2002-06-28 | 2004-03-18 | Toshiba Ceramics Co Ltd | Member for processing semiconductor wafer |
US6827789B2 (en) | 2002-07-01 | 2004-12-07 | Semigear, Inc. | Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry |
US7008879B2 (en) | 2002-07-01 | 2006-03-07 | Semigear, Inc. | Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry |
US20040018750A1 (en) | 2002-07-02 | 2004-01-29 | Sophie Auguste J.L. | Method for deposition of nitrogen doped silicon carbide films |
US20040052972A1 (en) | 2002-07-03 | 2004-03-18 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
US20050133161A1 (en) | 2002-07-08 | 2005-06-23 | Carpenter Craig M. | Apparatus and method for depositing materials onto microelectronic workpieces |
US7356762B2 (en) | 2002-07-08 | 2008-04-08 | Asm International Nv | Method for the automatic generation of an interactive electronic equipment documentation package |
US7387685B2 (en) | 2002-07-08 | 2008-06-17 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US20040018694A1 (en) | 2002-07-08 | 2004-01-29 | Samsung Electronics Co., Ltd. | Methods for forming silicon dioxide layers on substrates using atomic layer deposition |
US20040018304A1 (en) | 2002-07-10 | 2004-01-29 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040079286A1 (en) | 2002-07-12 | 2004-04-29 | Sven Lindfors | Method and apparatus for the pulse-wise supply of a vaporized liquid reactant |
US20050136657A1 (en) | 2002-07-12 | 2005-06-23 | Tokyo Electron Limited | Film-formation method for semiconductor process |
US20060125099A1 (en) | 2002-07-12 | 2006-06-15 | President And Fellows Of Harvard College | Vapor deposition of tungsten nitride |
WO2004007800A1 (en) | 2002-07-15 | 2004-01-22 | Aviza Technology, Inc. | Thermal processing apparatus and method for evacuating a process chamber |
US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
WO2004008491A2 (en) | 2002-07-15 | 2004-01-22 | Aviza Technology, Inc. | Thermal processing system and configurable vertical chamber |
US6976822B2 (en) | 2002-07-16 | 2005-12-20 | Semitool, Inc. | End-effectors and transfer devices for handling microelectronic workpieces |
US20040011504A1 (en) | 2002-07-17 | 2004-01-22 | Ku Vincent W. | Method and apparatus for gas temperature control in a semiconductor processing system |
US20040013577A1 (en) | 2002-07-17 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for providing gas to a processing chamber |
US20040050496A1 (en) | 2002-07-18 | 2004-03-18 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus and plasma processing method |
US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US20040129671A1 (en) | 2002-07-18 | 2004-07-08 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US7297641B2 (en) | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
US8082946B2 (en) | 2002-07-19 | 2011-12-27 | Entegris, Inc. | Liquid flow controller and precision dispense apparatus and system |
WO2004008827A2 (en) | 2002-07-19 | 2004-01-29 | Aviza Technology, Inc. | Atomic layer deposition of high k dielectric films |
US6843202B2 (en) | 2002-07-19 | 2005-01-18 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus for substrate employing photoirradiation |
US20120090704A1 (en) | 2002-07-19 | 2012-04-19 | Entegris, Inc. | Liquid Flow Controller And Precision Dispense Apparatus And System |
US20090311857A1 (en) | 2002-07-19 | 2009-12-17 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
WO2004010467A2 (en) | 2002-07-19 | 2004-01-29 | Aviza Technology, Inc. | Low temperature dielectric deposition using aminosilane and ozone |
US20040013818A1 (en) | 2002-07-19 | 2004-01-22 | Moon Kwang-Jin | Method of cleaning a chemical vapor deposition chamber |
US20050118837A1 (en) | 2002-07-19 | 2005-06-02 | Todd Michael A. | Method to form ultra high quality silicon-containing compound layers |
US20050173003A1 (en) | 2002-07-19 | 2005-08-11 | Mykrolis Corporation | Liquid flow controller and precision dispense apparatus and system |
US20040015300A1 (en) | 2002-07-22 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for monitoring solid precursor delivery |
US20090136668A1 (en) | 2002-07-23 | 2009-05-28 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US8444120B2 (en) | 2002-07-23 | 2013-05-21 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US20040016637A1 (en) | 2002-07-24 | 2004-01-29 | Applied Materials, Inc. | Multi-chemistry plating system |
US20040159343A1 (en) | 2002-07-26 | 2004-08-19 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US20040018307A1 (en) | 2002-07-26 | 2004-01-29 | Park In-Sung | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material |
US7201943B2 (en) | 2002-07-26 | 2007-04-10 | Samsung Electronics Co., Ltd. | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material |
US20040144323A1 (en) | 2002-07-29 | 2004-07-29 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Epitaxial wafer production apparatus and susceptor structure |
US7122085B2 (en) | 2002-07-30 | 2006-10-17 | Asm America, Inc. | Sublimation bed employing carrier gas guidance structures |
US20040023125A1 (en) | 2002-07-30 | 2004-02-05 | Hoya Corporation | Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask |
US20060057858A1 (en) | 2002-07-30 | 2006-03-16 | Hin-Yiu Chung | Method for oxidation of a layer and corresponding holder device for a substrate |
US20050072357A1 (en) | 2002-07-30 | 2005-04-07 | Shero Eric J. | Sublimation bed employing carrier gas guidance structures |
JP3725100B2 (en) | 2002-07-31 | 2005-12-07 | アプライド マテリアルズ インコーポレイテッド | Deposition method |
US20040094402A1 (en) | 2002-08-01 | 2004-05-20 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
US20050263932A1 (en) | 2002-08-02 | 2005-12-01 | Martin Heugel | Device and method for the production of three-dimensional objects by means of generative production method |
US7153542B2 (en) | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US6818864B2 (en) | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
US7173216B2 (en) | 2002-08-09 | 2007-02-06 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
US7678197B2 (en) | 2002-08-09 | 2010-03-16 | Sumitomo Osaka Cement Co., Ltd. | Susceptor device |
US20040029052A1 (en) | 2002-08-09 | 2004-02-12 | Samsung Electronics Co., Ltd. | Method of forming fine patterns using silicon oxide layer |
US20040083962A1 (en) | 2002-08-15 | 2004-05-06 | Applied Materials, Inc. | Clog-resistant gas delivery system |
US20040083961A1 (en) | 2002-08-15 | 2004-05-06 | Cem Basceri | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
US6890596B2 (en) | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US7085623B2 (en) | 2002-08-15 | 2006-08-01 | Asm International Nv | Method and system for using short ranged wireless enabled computers as a service tool |
US20060258078A1 (en) | 2002-08-18 | 2006-11-16 | Lee Sang-In | Atomic layer deposition of high-k metal oxides |
US20060228888A1 (en) | 2002-08-18 | 2006-10-12 | Lee Sang-In | Atomic layer deposition of high k metal silicates |
US6649921B1 (en) | 2002-08-19 | 2003-11-18 | Fusion Uv Systems, Inc. | Apparatus and method providing substantially two-dimensionally uniform irradiation |
US20040048439A1 (en) | 2002-08-21 | 2004-03-11 | Ravindra Soman | Method for fabricating a bipolar transistor base |
US20040036129A1 (en) | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US20040035358A1 (en) | 2002-08-23 | 2004-02-26 | Cem Basceri | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US20040038525A1 (en) | 2002-08-26 | 2004-02-26 | Shuang Meng | Enhanced atomic layer deposition |
US20110108929A1 (en) | 2002-08-26 | 2011-05-12 | Round Rock Research, Llc | Enhanced atomic layer deposition |
US20070166999A1 (en) | 2002-08-28 | 2007-07-19 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
US7041609B2 (en) | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
US6902647B2 (en) | 2002-08-29 | 2005-06-07 | Asm International N.V. | Method of processing substrates with integrated weighing steps |
US7256375B2 (en) | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
JP2004091848A (en) | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | Gaseous raw material supply system for thin film forming apparatus and thin film forming apparatus |
USD504142S1 (en) | 2002-09-04 | 2005-04-19 | Thermal Dynamics Corporation | Plasma arc torch tip |
USD499620S1 (en) | 2002-09-04 | 2004-12-14 | Thermal Dynamics Corporation | Plasma arc torch tip with secondary holes |
USD568914S1 (en) * | 2002-09-10 | 2008-05-13 | Applied Materials, Inc. | Substrate support lift pin |
US6884066B2 (en) | 2002-09-10 | 2005-04-26 | Fsi International, Inc. | Thermal process station with heated lid |
US20040124131A1 (en) | 2002-09-11 | 2004-07-01 | Aitchison Bradley J. | Precursor material delivery system for atomic layer deposition |
US7198447B2 (en) | 2002-09-12 | 2007-04-03 | Hitachi Kokusai Electric Inc. | Semiconductor device producing apparatus and producing method of semiconductor device |
US20040050325A1 (en) | 2002-09-12 | 2004-03-18 | Samoilov Arkadii V. | Apparatus and method for delivering process gas to a substrate processing system |
US20060008997A1 (en) | 2002-09-12 | 2006-01-12 | Chuck Jang | Atomic layer deposition of interpoly oxides in a non-volatile memory device |
US20040124549A1 (en) | 2002-09-16 | 2004-07-01 | Curran William J. | Liquid vapor delivery system and method of maintaining a constant level of fluid therein |
US20040082171A1 (en) | 2002-09-17 | 2004-04-29 | Shin Cheol Ho | ALD apparatus and ALD method for manufacturing semiconductor device |
US7411352B2 (en) | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US20060009044A1 (en) | 2002-09-19 | 2006-01-12 | Masanobu Igeta | Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus |
US20040083964A1 (en) | 2002-09-19 | 2004-05-06 | Applied Materials, Inc. | Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
US6715949B1 (en) | 2002-09-20 | 2004-04-06 | Eastman Kodak Company | Medium-handling in printer for donor and receiver mediums |
US20040083975A1 (en) | 2002-09-20 | 2004-05-06 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US20040058517A1 (en) | 2002-09-23 | 2004-03-25 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask |
US20060057799A1 (en) | 2002-09-24 | 2006-03-16 | Tokyo Electron Limited | Substrate processing apparatus |
US20060048710A1 (en) | 2002-09-24 | 2006-03-09 | Tokyo Electron Limited | Substrate processing apparatus |
JP2004113270A (en) | 2002-09-24 | 2004-04-15 | Pegasus Net Kk | Earhole type saw clinical thermometer and body temperature management system based on the clinical thermometer |
US6696367B1 (en) | 2002-09-27 | 2004-02-24 | Asm America, Inc. | System for the improved handling of wafers within a process tool |
US20040063289A1 (en) | 2002-09-30 | 2004-04-01 | Fujitsu Limited | Reduction in source-drain resistance of semiconductor device |
JP2004128019A (en) | 2002-09-30 | 2004-04-22 | Applied Materials Inc | Method and apparatus for plasma processing |
US20040065255A1 (en) | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US20070051299A1 (en) | 2002-10-04 | 2007-03-08 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US20070051471A1 (en) | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
US7749563B2 (en) | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
US20050160987A1 (en) | 2002-10-07 | 2005-07-28 | Tokyo Electron Limited | Plasma processing apparatus |
US20040208228A1 (en) | 2002-10-08 | 2004-10-21 | Sumitomo Electric Industries, Ltd. | Temperature gauge and ceramic susceptor in which it is utilized |
US7090394B2 (en) | 2002-10-08 | 2006-08-15 | Sumitomo Electric Industries, Ltd. | Temperature gauge and ceramic susceptor in which it is utilized |
US20040069226A1 (en) | 2002-10-09 | 2004-04-15 | Tokyo Electron Limited | Substrate processing method and substrate processing system |
JP2004134553A (en) | 2002-10-10 | 2004-04-30 | Sony Corp | Process for forming resist pattern and process for fabricating semiconductor device |
US20040071897A1 (en) | 2002-10-11 | 2004-04-15 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US6953609B2 (en) | 2002-10-11 | 2005-10-11 | Stmicroelectronics S.R.L. | High-density plasma process for depositing a layer of silicon nitride |
US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US7475588B2 (en) | 2002-10-17 | 2009-01-13 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US7296460B2 (en) | 2002-10-17 | 2007-11-20 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US6818566B2 (en) | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
US6723642B1 (en) | 2002-10-22 | 2004-04-20 | Electronics And Telecommunications Research Institute | Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition |
US20040077182A1 (en) | 2002-10-22 | 2004-04-22 | Lim Jung-Wook | Method for forming introgen-containing oxide thin film using plasma enhanced atomic layer deposition |
US7144806B1 (en) | 2002-10-23 | 2006-12-05 | Novellus Systems, Inc. | ALD of tantalum using a hydride reducing agent |
US20040087141A1 (en) | 2002-10-30 | 2004-05-06 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
US20070190744A1 (en) | 2002-10-31 | 2007-08-16 | Atsushi Hiraiwa | Method for fabricating semiconductor devices |
US20040092073A1 (en) | 2002-11-08 | 2004-05-13 | Cyril Cabral | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures |
JP2004163293A (en) | 2002-11-14 | 2004-06-10 | Iwatani Internatl Corp | Method and apparatus for measuring ozone gas concentration |
US20040144311A1 (en) | 2002-11-14 | 2004-07-29 | Ling Chen | Apparatus and method for hybrid chemical processing |
US7591907B2 (en) | 2002-11-14 | 2009-09-22 | Applied Materials, Inc. | Apparatus for hybrid chemical processing |
US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US6676290B1 (en) | 2002-11-15 | 2004-01-13 | Hsueh-Yu Lu | Electronic clinical thermometer |
US20040094206A1 (en) | 2002-11-15 | 2004-05-20 | Renesas Technology Corp. | Semiconductor manufacturing apparatus enabling inspection of mass flow controller maintaining connection thereto |
US20060141155A1 (en) | 2002-11-15 | 2006-06-29 | Havard University | Atomic layer deposition using metal amidinates |
US20090291208A1 (en) | 2002-11-15 | 2009-11-26 | Gordon Roy G | Atomic layer deposition using metal amidinates |
US20060108331A1 (en) | 2002-11-20 | 2006-05-25 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20040101622A1 (en) | 2002-11-20 | 2004-05-27 | Park Young Hoon | Method of depositing thin film using aluminum oxide |
US7379785B2 (en) | 2002-11-28 | 2008-05-27 | Tokyo Electron Limited | Substrate processing system, coating/developing apparatus, and substrate processing apparatus |
US7062161B2 (en) | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
US20040105738A1 (en) | 2002-11-29 | 2004-06-03 | Ahn Yo-Han | Substrate processing apparatus and method of processing substrate while controlling for contamination in substrate transfer module |
US6730614B1 (en) | 2002-11-29 | 2004-05-04 | Electronics And Telecommunications Research Institute | Method of forming a thin film in a semiconductor device |
US20040103914A1 (en) | 2002-12-02 | 2004-06-03 | Au Optronics Corp. | Method for cleaning a plasma chamber |
US20040104439A1 (en) | 2002-12-03 | 2004-06-03 | Asm International N.V. | Method of depositing barrier layer from metal gates |
US20040106249A1 (en) | 2002-12-03 | 2004-06-03 | Hannu Huotari | Method to fabricate dual metal CMOS devices |
US6858524B2 (en) | 2002-12-03 | 2005-02-22 | Asm International, Nv | Method of depositing barrier layer for metal gates |
US20050104112A1 (en) | 2002-12-03 | 2005-05-19 | Suvi Haukka | Method of depositing barrier layer from metal gates |
US6895158B2 (en) | 2002-12-09 | 2005-05-17 | Eastman Kodak Company | Waveguide and method of smoothing optical surfaces |
US6720531B1 (en) | 2002-12-11 | 2004-04-13 | Asm America, Inc. | Light scattering process chamber walls |
USD496008S1 (en) | 2002-12-12 | 2004-09-14 | Tokyo Electron Limited | Exhaust ring for manufacturing semiconductors |
USD494552S1 (en) | 2002-12-12 | 2004-08-17 | Tokyo Electron Limited | Exhaust ring for manufacturing semiconductors |
US20040112288A1 (en) | 2002-12-13 | 2004-06-17 | Whitesell Christopher S. | Gas injectors for a vertical furnace used in semiconductor processing |
US6929699B2 (en) | 2002-12-13 | 2005-08-16 | Texas Instruments Incorporated | Gas injectors for a vertical furnace used in semiconductor processing |
JP2004244298A (en) | 2002-12-17 | 2004-09-02 | Kobe Steel Ltd | Substrate holder for vapor-phase diamond synthesis and method of vapor-phase diamond synthesis |
US20040118342A1 (en) | 2002-12-18 | 2004-06-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bypass gas feed system and method to improve reactant gas flow and film deposition |
US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
US6990430B2 (en) | 2002-12-20 | 2006-01-24 | Brooks Automation, Inc. | System and method for on-the-fly eccentricity recognition |
US20060163683A1 (en) | 2002-12-20 | 2006-07-27 | Gundula Roth | Luminescent body and optical device including the same |
CN2588350Y (en) | 2002-12-26 | 2003-11-26 | 张连合 | Electric thermo-couple |
US20040126990A1 (en) | 2002-12-26 | 2004-07-01 | Fujitsu Limited | Semiconductor device having STI without divot its manufacture |
US20040126929A1 (en) | 2002-12-30 | 2004-07-01 | Novellus Systems, Inc. | Silicon carbide having low dielectric constant |
US20040187790A1 (en) | 2002-12-30 | 2004-09-30 | Osram Opto Semiconductors Gmbh | Substrate holder |
US7195479B2 (en) | 2003-01-06 | 2007-03-27 | Texas Instruments Incorporated | Hot liner insertion/removal fixture |
US20040129211A1 (en) | 2003-01-07 | 2004-07-08 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
US20040187304A1 (en) | 2003-01-07 | 2004-09-30 | Applied Materials, Inc. | Enhancement of Cu line reliability using thin ALD TaN film to cap the Cu line |
US20040137756A1 (en) | 2003-01-13 | 2004-07-15 | Applied Materials, Inc. | Method of improving stability in low k barrier layers |
USD486891S1 (en) | 2003-01-21 | 2004-02-17 | Richard W. Cronce, Jr. | Vent pipe protective cover |
USD497977S1 (en) | 2003-01-22 | 2004-11-02 | Tour & Andersson Ab | Sealing ring membrane |
US20040146644A1 (en) | 2003-01-23 | 2004-07-29 | Manchao Xiao | Precursors for depositing silicon containing films and processes thereof |
US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
US20060051925A1 (en) | 2003-01-27 | 2006-03-09 | Ahn Kie Y | Atomic layer deposition of metal oxynitride layers as gate dielectrics |
US20050218462A1 (en) | 2003-01-27 | 2005-10-06 | Ahn Kie Y | Atomic layer deposition of metal oxynitride layers as gate dielectrics |
US20040144980A1 (en) | 2003-01-27 | 2004-07-29 | Ahn Kie Y. | Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers |
USD497536S1 (en) | 2003-01-28 | 2004-10-26 | Bridgestone Corporation | Rubber vibration insulator |
USD558021S1 (en) | 2003-01-30 | 2007-12-25 | Roger Lawrence | Metal fabrication clamp |
US20040152287A1 (en) | 2003-01-31 | 2004-08-05 | Sherrill Adrian B. | Deposition of a silicon film |
US6867153B2 (en) | 2003-01-31 | 2005-03-15 | Trecenti Technologies, Inc. | Method of purging wafer receiving jig, wafer transfer device, and method of manufacturing semiconductor device |
US20050276928A1 (en) | 2003-02-03 | 2005-12-15 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
US20040151844A1 (en) | 2003-02-04 | 2004-08-05 | Zhihong Zhang | Method to plasma deposit on organic polymer dielectric film |
US7129165B2 (en) | 2003-02-04 | 2006-10-31 | Asm Nutool, Inc. | Method and structure to improve reliability of copper interconnects |
US20120258257A1 (en) | 2003-02-04 | 2012-10-11 | Asm International N.V. | Nanolayer deposition process |
US7163721B2 (en) | 2003-02-04 | 2007-01-16 | Tegal Corporation | Method to plasma deposit on organic polymer dielectric film |
US20040151845A1 (en) | 2003-02-04 | 2004-08-05 | Tue Nguyen | Nanolayer deposition process |
US6875477B2 (en) | 2003-02-04 | 2005-04-05 | Hitachi High-Technologies Corporation | Method for coating internal surface of plasma processing chamber |
US20040154746A1 (en) | 2003-02-05 | 2004-08-12 | Park Jun-Sig | Apparatus and method for producing a semiconductor device including a byproduct control system |
US20100275846A1 (en) | 2003-02-06 | 2010-11-04 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus, and computer recording medium |
US20050287725A1 (en) | 2003-02-06 | 2005-12-29 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus, and computer recording medium |
US6854580B2 (en) | 2003-02-06 | 2005-02-15 | Borgwarner, Inc. | Torsional damper having variable bypass clutch with centrifugal release mechanism |
US6876017B2 (en) | 2003-02-08 | 2005-04-05 | Intel Corporation | Polymer sacrificial light absorbing structure and method |
JP2004244661A (en) | 2003-02-12 | 2004-09-02 | Denso Corp | Method of producing thin film |
US20040168742A1 (en) | 2003-02-12 | 2004-09-02 | Kim Hyun-Joon | Module for transferring a substrate |
US20040203251A1 (en) | 2003-02-14 | 2004-10-14 | Kawaguchi Mark N. | Method and apparatus for removing a halogen-containing residue |
US7489389B2 (en) | 2003-02-17 | 2009-02-10 | Nikon Corporation | Stage device with frame-shaped member movable in at least three degrees of freedom within a two-dimensional plane |
US20090122293A1 (en) | 2003-02-17 | 2009-05-14 | Nikon Corporation | Stage device, exposure apparatus, and method of manufacturing devices |
US20060193980A1 (en) | 2003-02-20 | 2006-08-31 | Toshio Hasegawa | Method for forming film |
US20040163590A1 (en) | 2003-02-24 | 2004-08-26 | Applied Materials, Inc. | In-situ health check of liquid injection vaporizer |
US7053009B2 (en) | 2003-02-27 | 2006-05-30 | Sharp Laboratories Of America, Inc. | Nanolaminate film atomic layer deposition method |
US20040168627A1 (en) | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Atomic layer deposition of oxide film |
US20040169032A1 (en) | 2003-02-27 | 2004-09-02 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
US6917755B2 (en) | 2003-02-27 | 2005-07-12 | Applied Materials, Inc. | Substrate support |
US6930059B2 (en) | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
US20050172895A1 (en) | 2003-03-03 | 2005-08-11 | Seiko Epson Corporation | MOCVD apparatus and MOCVD method |
US7192892B2 (en) | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
US7098149B2 (en) | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US7405454B2 (en) | 2003-03-04 | 2008-07-29 | Micron Technology, Inc. | Electronic apparatus with deposited dielectric layers |
US20070166457A1 (en) | 2003-03-07 | 2007-07-19 | Hisayoshi Yamoto | Vaporizer, film forming apparatus including the same, method of vaporization and method of forming film |
US7238653B2 (en) | 2003-03-10 | 2007-07-03 | Hynix Semiconductor Inc. | Cleaning solution for photoresist and method for forming pattern using the same |
US6867086B1 (en) | 2003-03-13 | 2005-03-15 | Novellus Systems, Inc. | Multi-step deposition and etch back gap fill process |
US20050016956A1 (en) | 2003-03-14 | 2005-01-27 | Xinye Liu | Methods and apparatus for cycle time improvements for atomic layer deposition |
US7140558B2 (en) | 2003-03-24 | 2006-11-28 | Irene Base, legal representative | Mixing arrangement for atomizing nozzle in multi-phase flow |
US20040187777A1 (en) | 2003-03-24 | 2004-09-30 | Renesas Technology Corp. | CVD apparatus |
JP2004310019A (en) | 2003-03-24 | 2004-11-04 | Shin Etsu Chem Co Ltd | Antireflection film material, substrate having antireflection film and method for forming pattern |
US20050001062A1 (en) | 2003-03-24 | 2005-01-06 | Mccracken Thomas William | Mixing arrangement for atomizing nozzle in multi-phase flow |
JP2004294638A (en) | 2003-03-26 | 2004-10-21 | Tokyo Ohka Kogyo Co Ltd | Negative resist material and method for forming resist pattern |
US20070006806A1 (en) | 2003-03-26 | 2007-01-11 | Masayuki Imai | Wafer Support Tool for Heat Treatment and Heat Treatment Apparatus |
US7393207B2 (en) | 2003-03-26 | 2008-07-01 | Shin-Etsu Handotai Co., Ltd. | Wafer support tool for heat treatment and heat treatment apparatus |
US20040187784A1 (en) | 2003-03-28 | 2004-09-30 | Fluens Corporation | Continuous flow deposition system |
US7223014B2 (en) | 2003-03-28 | 2007-05-29 | Intempco Controls Ltd. | Remotely programmable integrated sensor transmitter |
US6972055B2 (en) | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US20060208215A1 (en) | 2003-04-04 | 2006-09-21 | Craig Metzner | Method for hafnium nitride deposition |
US7718930B2 (en) | 2003-04-07 | 2010-05-18 | Tokyo Electron Limited | Loading table and heat treating apparatus having the loading table |
US20070153625A1 (en) | 2003-04-08 | 2007-07-05 | Tetra Laval Holdings & Finance Sa | Method and an apparatus for the continous mixing of two flows |
US20040217217A1 (en) | 2003-04-09 | 2004-11-04 | Samsung Electronics Co., Ltd. | Gas supplying apparatus |
US20040200499A1 (en) | 2003-04-11 | 2004-10-14 | Applied Materials, Inc. | Backflush chamber clean |
US20080134887A1 (en) | 2003-04-15 | 2008-06-12 | Applied Materials, Inc. | Low pressure drop canister for fixed bed scrubber applications and method of using same |
US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US20040206305A1 (en) | 2003-04-16 | 2004-10-21 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US7307028B2 (en) | 2003-04-18 | 2007-12-11 | Advanced Lcd Technologies Development Center Co., Ltd. | Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device |
US20040209477A1 (en) | 2003-04-18 | 2004-10-21 | Applied Materials, Inc. | Methods for substrate orientation |
US20060151117A1 (en) | 2003-04-18 | 2006-07-13 | Hitachi Kokusai Electronic Inc. | Semiconductor producing device and semiconductor producing method |
US20050064207A1 (en) | 2003-04-21 | 2005-03-24 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
US20040212947A1 (en) | 2003-04-22 | 2004-10-28 | Applied Materials, Inc. | Substrate support having heat transfer system |
US20040214399A1 (en) | 2003-04-22 | 2004-10-28 | Micron Technology, Inc. | Atomic layer deposited ZrTiO4 films |
US20040213921A1 (en) | 2003-04-23 | 2004-10-28 | Taiwan Semiconductor Manufacturing Co. | Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up |
US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
US20040226507A1 (en) | 2003-04-24 | 2004-11-18 | Carpenter Craig M. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
US20040261712A1 (en) | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
US20040231600A1 (en) | 2003-04-28 | 2004-11-25 | Lee Kyu Ok | Wafer carrier locking device |
US20040220699A1 (en) | 2003-04-29 | 2004-11-04 | Heden Craig R | Host and ancillary tool interface methodology for distributed processing |
US7375035B2 (en) | 2003-04-29 | 2008-05-20 | Ronal Systems Corporation | Host and ancillary tool interface methodology for distributed processing |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US20060252244A1 (en) | 2003-04-29 | 2006-11-09 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
US20050054228A1 (en) | 2003-05-01 | 2005-03-10 | March David Martin | Mid-line connector and method for pipe-in-pipe electrical heating |
US20090204403A1 (en) | 2003-05-07 | 2009-08-13 | Omega Engineering, Inc. | Speech generating means for use with signal sensors |
US20040241341A1 (en) | 2003-05-07 | 2004-12-02 | Hui-Chu Lin | Method for forming silicon oxide layer |
US20040224478A1 (en) | 2003-05-08 | 2004-11-11 | International Business Machines Corporation | Sacrificial collar method for improved deep trench processing |
US6939817B2 (en) | 2003-05-08 | 2005-09-06 | Micron Technology, Inc. | Removal of carbon from an insulative layer using ozone |
US20040221808A1 (en) | 2003-05-09 | 2004-11-11 | Asm Japan K.K. | Thin-film deposition apparatus |
US20040221807A1 (en) | 2003-05-09 | 2004-11-11 | Mohith Verghese | Reactor surface passivation through chemical deactivation |
US7265061B1 (en) | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
US20040223893A1 (en) | 2003-05-09 | 2004-11-11 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Ozone generator |
US20040250600A1 (en) | 2003-05-12 | 2004-12-16 | Bevers William Daniel | Method of mass flow control flow verification and calibration |
US20050000428A1 (en) | 2003-05-16 | 2005-01-06 | Shero Eric J. | Method and apparatus for vaporizing and delivering reactant |
US20040226515A1 (en) | 2003-05-16 | 2004-11-18 | Applied Materials, Inc. | Heat transfer assembly |
USD505590S1 (en) | 2003-05-22 | 2005-05-31 | Kraft Foods Holdings, Inc. | Susceptor tray |
US20060286817A1 (en) | 2003-05-26 | 2006-12-21 | Hitoshi Kato | Cvd method for forming silicon nitride film |
WO2004106584A1 (en) | 2003-05-27 | 2004-12-09 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
US20040245091A1 (en) | 2003-06-04 | 2004-12-09 | Applied Materials, Inc. | Hdp-cvd multistep gapfill process |
US20040247779A1 (en) | 2003-06-05 | 2004-12-09 | Venkat Selvamanickam | Ultraviolet (UV) and plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
US20050003662A1 (en) | 2003-06-05 | 2005-01-06 | Jursich Gregory M. | Methods for forming aluminum containing films utilizing amino aluminum precursors |
US20040253790A1 (en) | 2003-06-10 | 2004-12-16 | Semiconductor Leading Edge Technologies, Inc. | Method for manufacturing semiconductor device |
US20060163612A1 (en) | 2003-06-13 | 2006-07-27 | Arizona Board Of Regents | Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn |
US7598513B2 (en) | 2003-06-13 | 2009-10-06 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn |
US7589003B2 (en) | 2003-06-13 | 2009-09-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
US7199513B2 (en) | 2003-06-13 | 2007-04-03 | Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh | Discharge lamp having two-band phosphor |
US7238596B2 (en) | 2003-06-13 | 2007-07-03 | Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University | Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs |
US20060068104A1 (en) | 2003-06-16 | 2006-03-30 | Tokyo Electron Limited | Thin-film formation in semiconductor device fabrication process and film deposition apparatus |
US20050009325A1 (en) | 2003-06-18 | 2005-01-13 | Hua Chung | Atomic layer deposition of barrier materials |
US7312494B2 (en) | 2003-06-24 | 2007-12-25 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
US20040261492A1 (en) | 2003-06-25 | 2004-12-30 | Kaveh Zarkar | System and method for in-situ flow verification and calibration |
US20050042778A1 (en) | 2003-06-26 | 2005-02-24 | Infineon Technologies Ag | System and method for determining the temperature of a semiconductor wafer |
US20040266011A1 (en) | 2003-06-26 | 2004-12-30 | Samsung Electronics Co., Ltd. | In-situ analysis method for atomic layer deposition process |
US7021330B2 (en) | 2003-06-26 | 2006-04-04 | Planar Systems, Inc. | Diaphragm valve with reliability enhancements for atomic layer deposition |
US7274867B2 (en) | 2003-06-26 | 2007-09-25 | Infineon Technologies Ag | System and method for determining the temperature of a semiconductor wafer |
US20060213441A1 (en) | 2003-06-27 | 2006-09-28 | Applied Microstructures, Inc. | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
US20070269983A1 (en) | 2003-06-27 | 2007-11-22 | Ofer Sneh | Ald Apparatus and Method |
US20100129548A1 (en) | 2003-06-27 | 2010-05-27 | Sundew Technologies, Llc | Ald apparatus and method |
US20050003089A1 (en) | 2003-07-04 | 2005-01-06 | Won Seok-Jun | Method of forming a carbon nano-material layer using a cyclic deposition technique |
US20090283041A1 (en) | 2003-07-08 | 2009-11-19 | Shizuo Tomiyasu | Solid organometallic compound-filled container and filling method thereof |
US8092604B2 (en) | 2003-07-08 | 2012-01-10 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
US20050008799A1 (en) | 2003-07-08 | 2005-01-13 | Shizuo Tomiyasu | Solid organometallic compound-filled container and filling method thereof |
US20070012402A1 (en) | 2003-07-08 | 2007-01-18 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
US7547363B2 (en) | 2003-07-08 | 2009-06-16 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
US20050006682A1 (en) | 2003-07-10 | 2005-01-13 | Jun-Soo Bae | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same |
US7055875B2 (en) | 2003-07-11 | 2006-06-06 | Asyst Technologies, Inc. | Ultra low contact area end effector |
US20050016452A1 (en) | 2003-07-22 | 2005-01-27 | Samsung Electronics Co., Ltd. | Gas supply unit and semiconductor device manufacturing apparatus using the same |
US20050054175A1 (en) | 2003-07-23 | 2005-03-10 | Matthias Bauer | Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates |
US20050263075A1 (en) | 2003-07-23 | 2005-12-01 | Luping Wang | Delivery systems for efficient vaporization of precursor source material |
US6909839B2 (en) | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
US7437060B2 (en) | 2003-07-23 | 2008-10-14 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
US7115838B2 (en) | 2003-07-23 | 2006-10-03 | Espec Corp. | Unit for varying a temperature of a test piece and testing instrument incorporating same |
US20050019026A1 (en) | 2003-07-23 | 2005-01-27 | Luping Wang | Delivery systems for efficient vaporization of precursor source material |
US20050046825A1 (en) | 2003-07-25 | 2005-03-03 | Lightwind Corporation | Method and apparatus for chemical monitoring |
US20050019494A1 (en) | 2003-07-25 | 2005-01-27 | Applied Materials, Inc., A Delaware Corporation | Sequential gas flow oxide deposition technique |
US20050016470A1 (en) | 2003-07-25 | 2005-01-27 | Tae-Soo Kang | Susceptor and deposition apparatus including the same |
US20050019960A1 (en) | 2003-07-25 | 2005-01-27 | Moon-Sook Lee | Method and apparatus for forming a ferroelectric layer |
US7399388B2 (en) | 2003-07-25 | 2008-07-15 | Applied Materials, Inc. | Sequential gas flow oxide deposition technique |
US20070066079A1 (en) | 2003-07-25 | 2007-03-22 | Grant Kloster | Sealing porous dielectrics with silane coupling reagents |
US7361447B2 (en) | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US20050023231A1 (en) | 2003-08-01 | 2005-02-03 | Chui-Kai Huang | Substrate supporting rod and substrate cassette using the same |
US20050106893A1 (en) | 2003-08-04 | 2005-05-19 | Glen Wilk | Surface preparation prior to deposition on germanium |
US20050079124A1 (en) | 2003-08-06 | 2005-04-14 | Sanderson William D. | Apparatus and method for producing chlorine dioxide |
US20070051312A1 (en) | 2003-08-07 | 2007-03-08 | Ofer Sneh | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
US7682454B2 (en) | 2003-08-07 | 2010-03-23 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
US20050037578A1 (en) | 2003-08-14 | 2005-02-17 | Wei Wen Chen | [method for forming an oxide/ nitride/oxide stacked layer] |
US20050037610A1 (en) | 2003-08-14 | 2005-02-17 | Yong-Won Cha | Methods of filling trenches using high-density plasma deposition (HDP) |
US20050040144A1 (en) | 2003-08-18 | 2005-02-24 | Eni Technology, Inc. | Control of plasma transitions in sputter processing systems |
US20050070123A1 (en) | 2003-08-27 | 2005-03-31 | Tomoyuki Hirano | Method for forming a thin film and method for fabricating a semiconductor device |
US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US20050092247A1 (en) | 2003-08-29 | 2005-05-05 | Schmidt Ryan M. | Gas mixer and manifold assembly for ALD reactor |
US8152922B2 (en) | 2003-08-29 | 2012-04-10 | Asm America, Inc. | Gas mixer and manifold assembly for ALD reactor |
JP2005079254A (en) | 2003-08-29 | 2005-03-24 | Mitsubishi Heavy Ind Ltd | Deposition method of silicon nitride film |
US20050106762A1 (en) | 2003-09-03 | 2005-05-19 | Nirupama Chakrapani | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics |
US20050048797A1 (en) | 2003-09-03 | 2005-03-03 | Asm Japan K.K/ | Method of forming thin film |
US20070022954A1 (en) | 2003-09-03 | 2007-02-01 | Tokyo Electron Limited | Gas treatment device and heat readiting method |
US20070113788A1 (en) | 2003-09-04 | 2007-05-24 | Tokyo Electron Limited | Plasma processing equipment |
US20050051093A1 (en) | 2003-09-08 | 2005-03-10 | Akitaka Makino | Vacuum processing apparatus |
US7235482B2 (en) | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
US20070084405A1 (en) | 2003-09-09 | 2007-04-19 | Adaptive Plasama Technology Corporation | Adaptive plasma source for generating uniform plasma |
US7414281B1 (en) | 2003-09-09 | 2008-08-19 | Spansion Llc | Flash memory with high-K dielectric material between substrate and gate |
US20050051854A1 (en) | 2003-09-09 | 2005-03-10 | International Business Machines Corporation | Structure and method for metal replacement gate of high performance |
US20050059262A1 (en) | 2003-09-12 | 2005-03-17 | Zhiping Yin | Transparent amorphous carbon structure in semiconductor devices |
US20050056780A1 (en) | 2003-09-17 | 2005-03-17 | Sionex Corporation | Solid-state gas flow generator and related systems, applications, and methods |
US20050059261A1 (en) | 2003-09-17 | 2005-03-17 | Cem Basceri | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US20110239936A1 (en) | 2003-09-19 | 2011-10-06 | Kenichi Suzaki | Producing method of semiconductor device and substrate processing apparatus |
US20090239386A1 (en) | 2003-09-19 | 2009-09-24 | Kenichi Suzaki | Producing method of semiconductor device and substrate processing apparatus |
US20050064719A1 (en) | 2003-09-19 | 2005-03-24 | Applied Materials, Inc. | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition |
US20050061964A1 (en) | 2003-09-22 | 2005-03-24 | Hitachi., Ltd. | Apparatus for detecting chemical substances and method therefor |
US20070137794A1 (en) | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
US20050098107A1 (en) | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
US20050121145A1 (en) | 2003-09-25 | 2005-06-09 | Du Bois Dale R. | Thermal processing system with cross flow injection system with rotatable injectors |
US7307178B2 (en) | 2003-09-25 | 2007-12-11 | Shin-Etsu Chemical Co., Ltd. | Processes of making γ,δ-unsaturated carboxylic acid and silyl ester thereof, carboxyl group-containing organosilicon compound and process of making |
US20050070729A1 (en) | 2003-09-25 | 2005-03-31 | Ayumu Kiyomori | Processes of making gamma,delta-unsaturated carboxylic acid and silyl ester thereof, carboxyl group-containing organosilicon compound and process of making |
US20050066893A1 (en) | 2003-09-29 | 2005-03-31 | Soininen Pekka T. | Safe liquid source containers |
US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
US20050069651A1 (en) | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Plasma processing system |
US6875677B1 (en) | 2003-09-30 | 2005-04-05 | Sharp Laboratories Of America, Inc. | Method to control the interfacial layer for deposition of high dielectric constant films |
US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
US6825106B1 (en) | 2003-09-30 | 2004-11-30 | Sharp Laboratories Of America, Inc. | Method of depositing a conductive niobium monoxide film for MOSFET gates |
US6982046B2 (en) | 2003-10-01 | 2006-01-03 | General Electric Company | Light sources with nanometer-sized VUV radiation-absorbing phosphors |
US20050074576A1 (en) | 2003-10-03 | 2005-04-07 | Alison Chaiken | Capping layer for enhanced performance media |
US20050208217A1 (en) | 2003-10-09 | 2005-09-22 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US7408225B2 (en) | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US20050079691A1 (en) | 2003-10-10 | 2005-04-14 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US20100317177A1 (en) | 2003-10-10 | 2010-12-16 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
US20050081786A1 (en) | 2003-10-15 | 2005-04-21 | Kubista David J. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7354482B2 (en) | 2003-10-15 | 2008-04-08 | Shimadzu Corporation | Film deposition device |
US7648895B2 (en) | 2003-10-20 | 2010-01-19 | Tokyo Electron Limited | Vertical CVD apparatus for forming silicon-germanium film |
US6974781B2 (en) | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
US20050085090A1 (en) | 2003-10-21 | 2005-04-21 | Applied Materials, Inc. | Method for controlling accuracy and repeatability of an etch process |
US20050241176A1 (en) | 2003-10-29 | 2005-11-03 | Shero Eric J | Reaction system for growing a thin film |
US20050092439A1 (en) | 2003-10-29 | 2005-05-05 | Keeton Tony J. | Low/high temperature substrate holder to reduce edge rolloff and backside damage |
US20050095779A1 (en) | 2003-10-29 | 2005-05-05 | Park Je-Min | Methods for forming resistors for integrated circuit devices |
US7108753B2 (en) | 2003-10-29 | 2006-09-19 | Asm America, Inc. | Staggered ribs on process chamber to reduce thermal effects |
US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050101843A1 (en) | 2003-11-06 | 2005-05-12 | Welch Allyn, Inc. | Wireless disposable physiological sensor |
US7329947B2 (en) | 2003-11-07 | 2008-02-12 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor substrate |
US20080124197A1 (en) | 2003-11-10 | 2008-05-29 | Van Der Meulen Peter | Semiconductor manufacturing process modules |
US20050100669A1 (en) | 2003-11-12 | 2005-05-12 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
US20070032045A1 (en) | 2003-11-20 | 2007-02-08 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and substrate processing apparatus |
US20050110069A1 (en) | 2003-11-22 | 2005-05-26 | Hynix Semiconductor Inc. | Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same |
US7055263B2 (en) | 2003-11-25 | 2006-06-06 | Air Products And Chemicals, Inc. | Method for cleaning deposition chambers for high dielectric constant materials |
US20050115946A1 (en) | 2003-12-02 | 2005-06-02 | Shim Kyu H. | Radical assisted oxidation apparatus |
US20050142361A1 (en) | 2003-12-04 | 2005-06-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Amorphous carbon, amorphous-carbon coated member, and process for forming amorphous carbon film |
KR20050054122A (en) | 2003-12-04 | 2005-06-10 | 성명모 | Method of fabricating thin film using uv-enhanced atomic layer deposition |
US20050120805A1 (en) | 2003-12-04 | 2005-06-09 | John Lane | Method and apparatus for substrate temperature control |
US7143897B1 (en) | 2003-12-09 | 2006-12-05 | H20 International, Inc. | Water filter |
US7838084B2 (en) | 2003-12-09 | 2010-11-23 | Micron Technology, Inc. | Atomic layer deposition method of depositing an oxide on a substrate |
US20050123690A1 (en) | 2003-12-09 | 2005-06-09 | Derderian Garo J. | Atomic layer deposition method of depositing an oxide on a substrate |
US20060257584A1 (en) | 2003-12-09 | 2006-11-16 | Derderian Garo J | Atomic layer deposition method of depositing an oxide on a substrate |
US7431966B2 (en) | 2003-12-09 | 2008-10-07 | Micron Technology, Inc. | Atomic layer deposition method of depositing an oxide on a substrate |
JP2005172489A (en) | 2003-12-09 | 2005-06-30 | Tokyo Yogyo Co Ltd | Temperature measuring probe for molten metal |
US20050130427A1 (en) | 2003-12-11 | 2005-06-16 | Samsung Electronics Co., Ltd. | Method of forming thin film for improved productivity |
US7301623B1 (en) | 2003-12-16 | 2007-11-27 | Nanometrics Incorporated | Transferring, buffering and measuring a substrate in a metrology system |
US20050136188A1 (en) | 2003-12-18 | 2005-06-23 | Chris Chang | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
US7569193B2 (en) | 2003-12-19 | 2009-08-04 | Applied Materials, Inc. | Apparatus and method for controlled combustion of gaseous pollutants |
US20050133166A1 (en) | 2003-12-19 | 2005-06-23 | Applied Materials, Inc. | Tuned potential pedestal for mask etch processing apparatus |
US20050132957A1 (en) | 2003-12-22 | 2005-06-23 | Seco Tools Ab | Carrier body and method |
US7662689B2 (en) | 2003-12-23 | 2010-02-16 | Intel Corporation | Strained transistor integration for CMOS |
US7645341B2 (en) | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
US20050133160A1 (en) | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
US20050148162A1 (en) | 2004-01-02 | 2005-07-07 | Huajie Chen | Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases |
US7467632B2 (en) | 2004-01-05 | 2008-12-23 | Hynix Semiconductor Inc. | Method for forming a photoresist pattern |
US20070163625A1 (en) | 2004-01-05 | 2007-07-19 | Hynix Semiconductor Inc. | Method for forming a photoresist pattern |
KR100593960B1 (en) | 2004-01-09 | 2006-06-30 | 병호 최 | Atomic Thin Layer Deposition Apparatus and Method |
US20050150601A1 (en) | 2004-01-12 | 2005-07-14 | Srivastava Aseem K. | Gas distribution plate assembly for plasma reactors |
US20050153573A1 (en) | 2004-01-14 | 2005-07-14 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
US7207763B2 (en) | 2004-01-15 | 2007-04-24 | Terasemicon Co., Ltd | Semiconductor manufacturing system and wafer holder for semiconductor manufacturing system |
USD535673S1 (en) | 2004-01-16 | 2007-01-23 | Thermal Dynamics Corporation | Gas distributor for a plasma arc torch |
US20070158026A1 (en) | 2004-01-16 | 2007-07-12 | Manabu Amikura | Processing apparatus |
US7071051B1 (en) | 2004-01-20 | 2006-07-04 | Advanced Micro Devices, Inc. | Method for forming a thin, high quality buffer layer in a field effect transistor and related structure |
US20070042581A1 (en) | 2004-01-21 | 2007-02-22 | Hitachi Kokusal Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
US7005227B2 (en) | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
US20050170306A1 (en) | 2004-01-21 | 2005-08-04 | Maria Oosterlaken Theodorus G. | Method and apparatus for purging seals in a thermal reactor |
US7354847B2 (en) | 2004-01-26 | 2008-04-08 | Taiwan Semiconductor Manufacturing Company | Method of trimming technology |
US20050164469A1 (en) | 2004-01-28 | 2005-07-28 | Infineon Technologies North America Corp. | Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches |
CN1655362A (en) | 2004-01-29 | 2005-08-17 | 三星电子株式会社 | Dielectric layer for semiconductor device and method of manufacturing the same |
US20070224777A1 (en) | 2004-01-30 | 2007-09-27 | Tokyo Electron Limited | Substrate Holder Having a Fluid Gap and Method of Fabricating the Substrate Holder |
US7163393B2 (en) | 2004-02-02 | 2007-01-16 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor silicon substrate |
US20070031599A1 (en) | 2004-02-03 | 2007-02-08 | Alexander Gschwandtner | Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layers |
US20050211384A1 (en) | 2004-02-13 | 2005-09-29 | Tokyo Electron Limited | Thermally sprayed member, electrode and plasma processing apparatus using the electrode |
US20050193952A1 (en) | 2004-02-13 | 2005-09-08 | Goodman Matt G. | Substrate support system for reduced autodoping and backside deposition |
US20050229849A1 (en) | 2004-02-13 | 2005-10-20 | Applied Materials, Inc. | High productivity plasma processing chamber |
US20050181535A1 (en) | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
US7202512B2 (en) | 2004-02-17 | 2007-04-10 | Industrial Technology Research Institute | Construction of thin strain-relaxed SiGe layers and method for fabricating the same |
US20050178333A1 (en) | 2004-02-18 | 2005-08-18 | Asm Japan K.K. | System and method of CVD chamber cleaning |
US7088003B2 (en) | 2004-02-19 | 2006-08-08 | International Business Machines Corporation | Structures and methods for integration of ultralow-k dielectrics with improved reliability |
US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
US20050183827A1 (en) | 2004-02-24 | 2005-08-25 | Applied Materials, Inc. | Showerhead mounting to accommodate thermal expansion |
US20100297391A1 (en) | 2004-02-25 | 2010-11-25 | General Nanotechnoloy Llc | Diamond capsules and methods of manufacture |
US20080153308A1 (en) | 2004-02-27 | 2008-06-26 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus |
US20050214458A1 (en) | 2004-03-01 | 2005-09-29 | Meiere Scott H | Low zirconium hafnium halide compositions |
US20060193979A1 (en) | 2004-03-01 | 2006-08-31 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
US20060062910A1 (en) | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
USD525127S1 (en) | 2004-03-01 | 2006-07-18 | Kraft Foods Holdings, Inc. | Susceptor ring |
US7957708B2 (en) | 2004-03-02 | 2011-06-07 | Rosemount Inc. | Process device with improved power generation |
CN1664987A (en) | 2004-03-05 | 2005-09-07 | 东京毅力科创株式会社 | Base plate processing device,base plate processing method and progarm |
US7098150B2 (en) | 2004-03-05 | 2006-08-29 | Air Liquide America L.P. | Method for novel deposition of high-k MSiON dielectric films |
US20050233477A1 (en) | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
US20050287771A1 (en) | 2004-03-05 | 2005-12-29 | Applied Materials, Inc. | Liquid precursors for the CVD deposition of amorphous carbon films |
US20080260345A1 (en) | 2004-03-08 | 2008-10-23 | Adc Telecommunications, Inc. | Fiber access terminal |
US20050193948A1 (en) | 2004-03-08 | 2005-09-08 | Yuuzou Oohirabaru | Vacuum processing apparatus |
US20050199342A1 (en) | 2004-03-09 | 2005-09-15 | Ali Shajii | Semiconductor manufacturing gas flow divider system and method |
US20050199013A1 (en) | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
US20050208718A1 (en) | 2004-03-16 | 2005-09-22 | Lim Jae-Soon | Methods of forming a capacitor using an atomic layer deposition process |
US20050208778A1 (en) | 2004-03-22 | 2005-09-22 | Weimin Li | Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells |
US7074690B1 (en) | 2004-03-25 | 2006-07-11 | Novellus Systems, Inc. | Selective gap-fill process |
US7888233B1 (en) | 2004-03-25 | 2011-02-15 | Novellus Systems, Inc. | Flowable film dielectric gap fill process |
US20050214457A1 (en) | 2004-03-29 | 2005-09-29 | Applied Materials, Inc. | Deposition of low dielectric constant films by N2O addition |
US20050221021A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for performing atomic layer deposition |
US20070087579A1 (en) | 2004-03-31 | 2007-04-19 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
US20050221618A1 (en) | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
CN1563483A (en) | 2004-04-01 | 2005-01-12 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
US20050223994A1 (en) | 2004-04-08 | 2005-10-13 | Blomiley Eric R | Substrate susceptors for receiving semiconductor substrates to be deposited upon and methods of depositing materials over semiconductor substrates |
US20050227502A1 (en) | 2004-04-12 | 2005-10-13 | Applied Materials, Inc. | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity |
US20050229848A1 (en) | 2004-04-15 | 2005-10-20 | Asm Japan K.K. | Thin-film deposition apparatus |
US20050255257A1 (en) | 2004-04-20 | 2005-11-17 | Choi Soo Y | Method of controlling the film properties of PECVD-deposited thin films |
US7865070B2 (en) | 2004-04-21 | 2011-01-04 | Hitachi Kokusai Electric Inc. | Heat treating apparatus |
US20080267598A1 (en) | 2004-04-21 | 2008-10-30 | Hitachi Kokusai Electric Inc. | Heat Treating Apparatus |
US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
USD553104S1 (en) | 2004-04-21 | 2007-10-16 | Tokyo Electron Limited | Absorption board for an electric chuck used in semiconductor manufacture |
US20050238807A1 (en) | 2004-04-27 | 2005-10-27 | Applied Materials, Inc. | Refurbishment of a coated chamber component |
US20050253061A1 (en) | 2004-04-28 | 2005-11-17 | Sionex Corporation | Systems and methods for ion species analysis with enhanced condition control and data interpretation |
US20100159707A1 (en) | 2004-04-30 | 2010-06-24 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
US20050241763A1 (en) | 2004-04-30 | 2005-11-03 | Zhisong Huang | Gas distribution system having fast gas switching capabilities |
US20050241765A1 (en) | 2004-04-30 | 2005-11-03 | Rajinder Dhindsa | Apparatus including showerhead electrode and heater for plasma processing |
US20070231488A1 (en) | 2004-04-30 | 2007-10-04 | Hans Von Kaenel | Method for Producing Virtual Ge Substrates for III/V-Integration on Si(001) |
US20050245058A1 (en) | 2004-05-03 | 2005-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for producing high throughput strained-si channel mosfets |
US7049247B2 (en) | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
US20050249876A1 (en) | 2004-05-06 | 2005-11-10 | Semiconductor Leading Edge Technologies, Inc. | Film forming apparatus and method |
US20060219169A1 (en) | 2004-05-07 | 2006-10-05 | Applied Materials, Inc. | Hdp-cvd seasoning process for high power hdp-cvd gapfil to improve particle performance |
US20050250340A1 (en) | 2004-05-07 | 2005-11-10 | Applied Materials, Inc., A Delaware Corporation | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
US7202148B2 (en) | 2004-05-10 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company | Method utilizing compensation features in semiconductor processing |
US20050252447A1 (en) | 2004-05-11 | 2005-11-17 | Applied Materials, Inc. | Gas blocker plate for improved deposition |
US20050271813A1 (en) | 2004-05-12 | 2005-12-08 | Shreyas Kher | Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials |
US20050251990A1 (en) | 2004-05-12 | 2005-11-17 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7989736B2 (en) | 2004-05-12 | 2011-08-02 | Viatron Technologies Inc. | System for heat treatment of semiconductor device |
US20180025890A1 (en) | 2004-05-12 | 2018-01-25 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US8282992B2 (en) | 2004-05-12 | 2012-10-09 | Applied Materials, Inc. | Methods for atomic layer deposition of hafnium-containing high-K dielectric materials |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US20060236934A1 (en) | 2004-05-12 | 2006-10-26 | Choi Soo Y | Plasma uniformity control by gas diffuser hole design |
US20060228496A1 (en) | 2004-05-12 | 2006-10-12 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US20050271812A1 (en) | 2004-05-12 | 2005-12-08 | Myo Nyi O | Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US20050252455A1 (en) | 2004-05-13 | 2005-11-17 | Tokyo Electron Limited | Substrate transfer mechanism and subtrate transfer apparatus including same, particle removal method for the subtrate transfer mechanism and apparatus, program for executing the method, and storage medium for storing the program |
US20050255327A1 (en) | 2004-05-14 | 2005-11-17 | Bryce Chaney | Articles having bioactive surfaces and solvent-free methods of preparation thereof |
US20080110401A1 (en) | 2004-05-18 | 2008-05-15 | Sumco Corporation | Susceptor For Vapor-Phase Growth Reactor |
WO2005112082A1 (en) | 2004-05-18 | 2005-11-24 | Ips Ltd. | Cyclic pulsed two-level plasma atomic layer deposition apparatus and method |
US20050260347A1 (en) | 2004-05-21 | 2005-11-24 | Narwankar Pravin K | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20060019033A1 (en) | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US20050258280A1 (en) | 2004-05-24 | 2005-11-24 | Shin-Etsu Chemical Co., Ltd. | Shower plate for plasma processing apparatus and plasma processing apparatus |
US20050260850A1 (en) | 2004-05-24 | 2005-11-24 | Asm Japan K.K. | Low-carbon-doped silicon oxide film and damascene structure using same |
US20050260837A1 (en) | 2004-05-24 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | Methods for stable and repeatable ion implantation |
US20050263072A1 (en) | 2004-05-26 | 2005-12-01 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
US20080026574A1 (en) | 2004-05-26 | 2008-01-31 | Tokyo Electron Limited | Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process |
US7229502B2 (en) | 2004-05-27 | 2007-06-12 | Macronix International Co., Ltd. | Method of forming a silicon nitride layer |
US20050263719A1 (en) | 2004-05-28 | 2005-12-01 | Toshiyuki Ohdaira | Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system |
US20100014479A1 (en) | 2004-06-01 | 2010-01-21 | Myeong Cheol Kim | Method and apparatus for providing enhanced messages on common control channel in wireless communication system |
US20050272247A1 (en) | 2004-06-02 | 2005-12-08 | Tokyo Electron Limited | Substrate processing method and fabrication process of a semiconductor device |
US20050268856A1 (en) | 2004-06-02 | 2005-12-08 | Miller Matthew W | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7651583B2 (en) | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US20050277271A1 (en) | 2004-06-09 | 2005-12-15 | International Business Machines Corporation | RAISED STI PROCESS FOR MULTIPLE GATE OX AND SIDEWALL PROTECTION ON STRAINED Si/SGOI STRUCTURE WITH ELEVATED SOURCE/DRAIN |
US20060063346A1 (en) | 2004-06-10 | 2006-03-23 | Jong-Cheol Lee | Method of forming a layer and method of forming a capacitor of a semiconductor device having the same |
US20070232031A1 (en) | 2004-06-10 | 2007-10-04 | Applied Materials, Inc. | UV assisted low temperature epitaxial growth of silicon-containing films |
US7132360B2 (en) | 2004-06-10 | 2006-11-07 | Freescale Semiconductor, Inc. | Method for treating a semiconductor surface to form a metal-containing layer |
US20050284991A1 (en) | 2004-06-10 | 2005-12-29 | Humanscale Corporation | Mechanism for positional adjustment of an attached device |
US20070178235A1 (en) | 2004-06-14 | 2007-08-02 | Adeka Corporation | Thin film-forming material and method for producing thin film |
US20080035607A1 (en) | 2004-06-17 | 2008-02-14 | O'hara Anthony | Method and Apparatus for the Etching of Microstructures |
US20060051505A1 (en) | 2004-06-18 | 2006-03-09 | Uwe Kortshagen | Process and apparatus for forming nanoparticles using radiofrequency plasmas |
US7399570B2 (en) | 2004-06-18 | 2008-07-15 | Hynix Semiconductor Inc. | Water-soluble negative photoresist polymer and composition containing the same |
US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
US20050282101A1 (en) | 2004-06-21 | 2005-12-22 | Naoshi Adachi | Heat treatment jig for silicon semiconductor substrate |
JP2011049592A (en) | 2004-06-21 | 2011-03-10 | Tokyo Electron Ltd | Plasma processing system and method, and computer-readable storage medium |
US7210925B2 (en) | 2004-06-21 | 2007-05-01 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for silicon semiconductor substrate |
US20070020167A1 (en) | 2004-06-22 | 2007-01-25 | Han In-Taek | Method of preparing catalyst for manufacturing carbon nanotubes |
US20050282350A1 (en) | 2004-06-22 | 2005-12-22 | You-Hua Chou | Atomic layer deposition for filling a gap between devices |
US20050284573A1 (en) | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
US20050285097A1 (en) | 2004-06-24 | 2005-12-29 | Huiling Shang | Integration of strained Ge into advanced CMOS technology |
US7073834B2 (en) | 2004-06-25 | 2006-07-11 | Applied Materials, Inc. | Multiple section end effector assembly |
US20050285208A1 (en) | 2004-06-25 | 2005-12-29 | Chi Ren | Metal gate electrode for semiconductor devices |
US8202575B2 (en) | 2004-06-28 | 2012-06-19 | Cambridge Nanotech, Inc. | Vapor deposition systems and methods |
US20170159177A1 (en) | 2004-06-28 | 2017-06-08 | Ultratech, Inc. | Vapor deposition systems and methods |
US20060021573A1 (en) | 2004-06-28 | 2006-02-02 | Cambridge Nanotech Inc. | Vapor deposition systems and methods |
US20060006538A1 (en) | 2004-07-02 | 2006-01-12 | Lsi Logic Corporation | Extreme low-K interconnect structure and method |
US20060000411A1 (en) | 2004-07-05 | 2006-01-05 | Jung-Hun Seo | Method of forming a layer on a semiconductor substrate and apparatus for performing the same |
US8046193B2 (en) | 2004-07-07 | 2011-10-25 | Kla-Tencor Corporation | Determining process condition in substrate processing module |
US20080228306A1 (en) | 2004-07-07 | 2008-09-18 | Sensarray Corporation | Data collection and analysis system |
US20080061667A1 (en) | 2004-07-09 | 2008-03-13 | Koninklijke Philips Electronics, N.V. | Uvc/Vuv Dielectric Barrier Discharge Lamp with Reflector |
US7422653B2 (en) | 2004-07-13 | 2008-09-09 | Applied Materials, Inc. | Single-sided inflatable vertical slit valve |
US9111972B2 (en) | 2004-07-13 | 2015-08-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and manufacturing method for a semiconductor device |
US20060014397A1 (en) | 2004-07-13 | 2006-01-19 | Seamons Martin J | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon |
JP2006028572A (en) | 2004-07-14 | 2006-02-02 | Ulvac Japan Ltd | Thin film deposition method |
US20060013674A1 (en) | 2004-07-14 | 2006-01-19 | Elliott Martin R | Methods and apparatus for repositioning support for a substrate carrier |
US20060013946A1 (en) | 2004-07-15 | 2006-01-19 | Park Hong-Bae | Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure |
US20060019495A1 (en) | 2004-07-20 | 2006-01-26 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata |
US20060016783A1 (en) | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
US20060019502A1 (en) | 2004-07-23 | 2006-01-26 | Park Beom S | Method of controlling the film properties of a CVD-deposited silicon nitride film |
US20060032443A1 (en) | 2004-07-28 | 2006-02-16 | Kazuhide Hasebe | Film formation method and apparatus for semiconductor process |
US20060021703A1 (en) | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US7279256B2 (en) | 2004-07-30 | 2007-10-09 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US20060021572A1 (en) | 2004-07-30 | 2006-02-02 | Colorado School Of Mines | High Vacuum Plasma-Assisted Chemical Vapor Deposition System |
US20060026314A1 (en) | 2004-07-30 | 2006-02-02 | Franchuk Brian A | Communication controller with automatic time stamping |
US20090107404A1 (en) | 2004-07-30 | 2009-04-30 | Katten Muchin Rosenman Llp | Epitaxial reactor with susceptor controlled positioning |
JP2006049352A (en) | 2004-07-30 | 2006-02-16 | Sumitomo Osaka Cement Co Ltd | Suscepter apparatus |
US20130012034A1 (en) | 2004-08-02 | 2013-01-10 | Ahn Kie Y | Zirconium-doped tantalum oxide films |
US20090011150A1 (en) | 2004-08-04 | 2009-01-08 | Hyeong-Tag Jeon | Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias |
US20080050538A1 (en) | 2004-08-06 | 2008-02-28 | Tokyo Electron Limited | Thin Film Forming Method and Thin Film Forming Apparatus |
US7955646B2 (en) | 2004-08-09 | 2011-06-07 | Applied Materials, Inc. | Elimination of flow and pressure gradients in low utilization processes |
KR101114219B1 (en) | 2004-08-09 | 2012-03-05 | 주성엔지니어링(주) | Apparatus for atomic layer deposition comprising light source, and the method of deposition using the same |
US7504344B2 (en) | 2004-08-09 | 2009-03-17 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
US20070218705A1 (en) | 2004-08-09 | 2007-09-20 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
US20060110930A1 (en) | 2004-08-16 | 2006-05-25 | Yoshihide Senzaki | Direct liquid injection system and method for forming multi-component dielectric films |
US20060040054A1 (en) | 2004-08-18 | 2006-02-23 | Pearlstein Ronald M | Passivating ALD reactor chamber internal surfaces to prevent residue buildup |
JP2006059931A (en) | 2004-08-18 | 2006-03-02 | Canon Anelva Corp | Rapid thermal process device |
US20060040508A1 (en) | 2004-08-23 | 2006-02-23 | Bing Ji | Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
US20080092821A1 (en) | 2004-08-24 | 2008-04-24 | Shin-Etsu Handotai Co., Ltd. | Quartz Jig and Semiconductor Manufacturing Apparatus |
USD524600S1 (en) | 2004-08-26 | 2006-07-11 | Maytag Corporation | Convection cover for cooking appliance |
US20060068121A1 (en) | 2004-08-27 | 2006-03-30 | Lg Philips Lcd Co., Ltd. | Apparatus for treating thin film and method of treating thin film |
US20070264807A1 (en) | 2004-08-30 | 2007-11-15 | Stefano Leone | Cleaining Process and Operating Process for a Cvd Reactor |
US20060051520A1 (en) | 2004-08-31 | 2006-03-09 | Schott Ag | Process and apparatus for the plasma coating of workpieces with spectral evaluation of the process parameters |
US20060046518A1 (en) | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US20070166966A1 (en) | 2004-09-03 | 2007-07-19 | Asm America, Inc. | Deposition from liquid sources |
US20060057828A1 (en) | 2004-09-10 | 2006-03-16 | Mitsuhiro Omura | Method of manufacturing semiconductor device |
US20060137609A1 (en) | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
US20080277647A1 (en) | 2004-09-16 | 2008-11-13 | Arizona Board Of Regents, A Body Corporate Acting | Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon |
US20060292845A1 (en) | 2004-09-17 | 2006-12-28 | Chiang Tony P | Processing substrates using site-isolated processing |
US20060060930A1 (en) | 2004-09-17 | 2006-03-23 | Metz Matthew V | Atomic layer deposition of high dielectric constant gate dielectrics |
JP2006090762A (en) | 2004-09-22 | 2006-04-06 | Kawaso Electric Industrial Co Ltd | Temperature measurement instrument |
WO2006035281A1 (en) | 2004-09-28 | 2006-04-06 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Precursor for film formation and method for forming ruthenium-containing film |
US7712435B2 (en) | 2004-09-28 | 2010-05-11 | Asm Japan K.K. | Plasma processing apparatus with insulated gas inlet pore |
US7393418B2 (en) | 2004-09-29 | 2008-07-01 | Covalent Materials Corporation | Susceptor |
US7806587B2 (en) | 2004-09-29 | 2010-10-05 | Citizen Holdings Co., Ltd. | Electronic clinical thermometer and method of producing the same |
US20060068125A1 (en) | 2004-09-30 | 2006-03-30 | Gouri Radhakrishnan | Method for producing carbon surface films by plasma exposure of a carbide compound |
US7326656B2 (en) | 2004-09-30 | 2008-02-05 | Intel Corporation | Method of forming a metal oxide dielectric |
US20060068097A1 (en) | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | method for forming a passivated metal layer |
JP2006124832A (en) | 2004-09-30 | 2006-05-18 | Nichias Corp | Vapor phase growth system and vapor phase growth method |
JP2006124831A (en) | 2004-09-30 | 2006-05-18 | Nichias Corp | Reaction vessel for vapor phase growth, and vapor phase growth method |
US6874247B1 (en) | 2004-10-12 | 2005-04-05 | Tsang-Hung Hsu | Toothbrush dryer |
US20060257563A1 (en) | 2004-10-13 | 2006-11-16 | Seok-Joo Doh | Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique |
US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
US20060099782A1 (en) | 2004-10-15 | 2006-05-11 | Massachusetts Institute Of Technology | Method for forming an interface between germanium and other materials |
US8147242B2 (en) | 2004-10-19 | 2012-04-03 | Canon Anelva Corporation | Substrate supporting/transferring tray |
US7780440B2 (en) | 2004-10-19 | 2010-08-24 | Canon Anelva Corporation | Substrate supporting/transferring tray |
US20060087638A1 (en) | 2004-10-26 | 2006-04-27 | Noriyuki Hirayanagi | Substrate conveyor apparatus, substrate conveyance method and exposure apparatus |
US7790633B1 (en) | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
US20060090702A1 (en) | 2004-10-28 | 2006-05-04 | Samsung Electronics Co., Ltd. | Duplex chemical vapor deposition system and pulsed processing method using the same |
US7163900B2 (en) | 2004-11-01 | 2007-01-16 | Infineon Technologies Ag | Using polydentate ligands for sealing pores in low-k dielectrics |
US20060093756A1 (en) | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
US20060094236A1 (en) | 2004-11-03 | 2006-05-04 | Elkins Patricia C | Electroless plating of metal caps for chalcogenide-based memory devices |
US7727880B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
US20060110934A1 (en) | 2004-11-08 | 2006-05-25 | Yusuke Fukuchi | Method and apparatus for forming insulating film |
US20060097305A1 (en) | 2004-11-08 | 2006-05-11 | Lee Kee-Jeung | Capacitor with zirconium oxide and method for fabricating the same |
US7771796B2 (en) | 2004-11-09 | 2010-08-10 | Tokyo Electron Limited | Plasma processing method and film forming method |
US20060097220A1 (en) | 2004-11-10 | 2006-05-11 | Samsung Electronics Co., Ltd. | Etching solution and method for removing low-k dielectric layer |
US20060096540A1 (en) | 2004-11-11 | 2006-05-11 | Choi Jin H | Apparatus to manufacture semiconductor |
US20060105566A1 (en) | 2004-11-12 | 2006-05-18 | Carlo Waldfried | Ultraviolet assisted pore sealing of porous low k dielectric films |
US20060291982A1 (en) | 2004-11-15 | 2006-12-28 | Keiichi Tanaka | Substrate conveyor apparatus, substrate conveyance method and exposure apparatus |
US20060102968A1 (en) | 2004-11-15 | 2006-05-18 | International Business Machines Corporation | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide |
WO2006054854A1 (en) | 2004-11-18 | 2006-05-26 | Ips Ltd. | A method for depositing thin film using ald |
US8072578B2 (en) | 2004-11-18 | 2011-12-06 | Nikon Corporation | Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method |
US20060107898A1 (en) | 2004-11-19 | 2006-05-25 | Blomberg Tom E | Method and apparatus for measuring consumption of reactants |
US20070134821A1 (en) | 2004-11-22 | 2007-06-14 | Randhir Thakur | Cluster tool for advanced front-end processing |
US20060156979A1 (en) | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
WO2006056091A1 (en) | 2004-11-24 | 2006-06-01 | Oc Oerlikon Balzers Ag | Vacuum processing chamber for very large area substrates |
US20060108221A1 (en) | 2004-11-24 | 2006-05-25 | William Goodwin | Method and apparatus for improving measuring accuracy in gas monitoring systems |
US20080050536A1 (en) | 2004-11-24 | 2008-02-28 | Oc Oerlikon Balzers Ag | Vacuum Processing Chamber for Very Large Area Substrates |
US20060115589A1 (en) | 2004-11-29 | 2006-06-01 | Tokyo Electron Limited | Method and system for measuring a flow rate in a solid precursor delivery system |
US20080032514A1 (en) | 2004-11-29 | 2008-02-07 | Hitachi Kokusai Electric Inc. | Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus |
US20060113038A1 (en) | 2004-11-29 | 2006-06-01 | Applied Materials, Inc. | Gas distribution system for improved transient phase deposition |
US20060113806A1 (en) | 2004-11-29 | 2006-06-01 | Asm Japan K.K. | Wafer transfer mechanism |
US7311977B2 (en) | 2004-11-29 | 2007-12-25 | Kabushiki Kaisha Kobe Seiko Sho | Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film |
US20080102603A1 (en) | 2004-11-30 | 2008-05-01 | Shin-Etsu Handotai Co., Ltd. | Method for Producing Direct Bonded Wafer and Direct Bonded Wafer |
JP2006153706A (en) | 2004-11-30 | 2006-06-15 | Taiyo Nippon Sanso Corp | Temperature sensing element and vapor phase deposition device |
US20060113675A1 (en) | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
US20060118240A1 (en) | 2004-12-03 | 2006-06-08 | Applied Science And Technology, Inc. | Methods and apparatus for downstream dissociation of gases |
US20060128142A1 (en) | 2004-12-09 | 2006-06-15 | Caroline Whelan | Method for selective deposition of a thin self-assembled monolayer |
US20070111470A1 (en) | 2004-12-10 | 2007-05-17 | Micron Technolgy, Inc. | Trench insulation structures and methods |
US20060128168A1 (en) | 2004-12-13 | 2006-06-15 | Micron Technology, Inc. | Atomic layer deposited lanthanum hafnium oxide dielectrics |
US20060127067A1 (en) | 2004-12-13 | 2006-06-15 | General Electric Company | Fast heating and cooling wafer handling assembly and method of manufacturing thereof |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7290813B2 (en) | 2004-12-16 | 2007-11-06 | Asyst Technologies, Inc. | Active edge grip rest pad |
US20070095286A1 (en) | 2004-12-16 | 2007-05-03 | Yong-Ku Baek | Apparatus and method for thin film deposition |
US20060133955A1 (en) | 2004-12-17 | 2006-06-22 | Peters David W | Apparatus and method for delivering vapor phase reagent to a deposition chamber |
US20060223301A1 (en) | 2004-12-17 | 2006-10-05 | Serge Vanhaelemeersch | Formation of deep via airgaps for three dimensional wafer to wafer interconnect |
US20060130751A1 (en) | 2004-12-22 | 2006-06-22 | Applied Materials, Inc. | Cluster tool substrate throughput optimization |
US20060130767A1 (en) | 2004-12-22 | 2006-06-22 | Applied Materials, Inc. | Purged vacuum chuck with proximity pins |
US20080211423A1 (en) | 2004-12-24 | 2008-09-04 | Minebea Co., Ltd. | Multiple-Light Discharge Lamp Lighting Device |
US7579785B2 (en) | 2004-12-24 | 2009-08-25 | Minebea Co., Ltd. | Multiple-light discharge lamp lighting device |
US20060137608A1 (en) | 2004-12-28 | 2006-06-29 | Choi Seung W | Atomic layer deposition apparatus |
US20060141758A1 (en) | 2004-12-28 | 2006-06-29 | Ronald Naumann | Method of forming contact pads |
US20070286957A1 (en) | 2004-12-28 | 2007-12-13 | Bridgestone Corporation | Conductive Endless Belt, Method For Producing Same, And Image Forming Apparatus Employing Same |
JP2006186271A (en) | 2004-12-28 | 2006-07-13 | Sharp Corp | Vapor phase deposition device and manufacturing method of film-formed substrate |
US20090104594A1 (en) | 2004-12-29 | 2009-04-23 | Biogen Idec | Bioreactor Process Control System and Method |
US20060144820A1 (en) | 2004-12-30 | 2006-07-06 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
US20060205223A1 (en) | 2004-12-30 | 2006-09-14 | Smayling Michael C | Line edge roughness reduction compatible with trimming |
US7482247B1 (en) | 2004-12-30 | 2009-01-27 | Novellus Systems, Inc. | Conformal nanolaminate dielectric deposition and etch bag gap fill process |
US20060147626A1 (en) | 2004-12-30 | 2006-07-06 | Blomberg Tom E | Method of pulsing vapor precursors in an ALD reactor |
US20060148151A1 (en) | 2005-01-04 | 2006-07-06 | Anand Murthy | CMOS transistor junction regions formed by a CVD etching and deposition sequence |
JP2006188729A (en) | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
US20060148180A1 (en) | 2005-01-05 | 2006-07-06 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US8119466B2 (en) | 2005-01-07 | 2012-02-21 | International Business Machines Corporation | Self-aligned process for nanotube/nanowire FETs |
US20110256675A1 (en) | 2005-01-07 | 2011-10-20 | International Business Machines Corporation | SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs |
US20060154424A1 (en) | 2005-01-09 | 2006-07-13 | Ming-Tzong Yang | Method of manufacturing a split-gate flash memory device |
US20060156981A1 (en) | 2005-01-18 | 2006-07-20 | Kyle Fondurulia | Wafer support pin assembly |
WO2006078666A2 (en) | 2005-01-18 | 2006-07-27 | Asm America, Inc. | Reaction system for growing a thin film |
US20060266289A1 (en) | 2005-01-18 | 2006-11-30 | Mohith Verghese | Reaction system for growing a thin film |
US9029244B2 (en) | 2005-01-19 | 2015-05-12 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
US20060162863A1 (en) | 2005-01-21 | 2006-07-27 | Hyung-Joon Kim | Semiconductor plasma-processing apparatus and method |
US20060177855A1 (en) | 2005-01-21 | 2006-08-10 | Utermohlen Joseph G | Nanoparticles for manipulation of biopolymers and methods of thereof |
US20060162661A1 (en) | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
US20060166428A1 (en) | 2005-01-24 | 2006-07-27 | Isao Kamioka | Semiconductor device and method of fabricating the same |
WO2006080782A1 (en) | 2005-01-26 | 2006-08-03 | Ips Ltd. | Method of depositing thin layer using atomic layer deposition |
US20060162658A1 (en) | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium layer deposition apparatus and method |
US20060165892A1 (en) | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
US20060240187A1 (en) | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
US20080128726A1 (en) | 2005-01-31 | 2008-06-05 | Ube Industries, Ltd., 1978 - 96 | Red Nitride Phosphor and Production Method Thereof |
US20120108039A1 (en) | 2005-01-31 | 2012-05-03 | Ali Zojaji | Etchant treatment processes for substrate surfaces and chamber surfaces |
US20060172531A1 (en) | 2005-02-01 | 2006-08-03 | Keng-Chu Lin | Sealing pores of low-k dielectrics using CxHy |
US7298009B2 (en) | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
US20060205194A1 (en) | 2005-02-04 | 2006-09-14 | Matthias Bauer | Methods of depositing electrically active doped crystalline Si-containing films |
US20060175669A1 (en) | 2005-02-05 | 2006-08-10 | Samsung Electronics Co., Ltd. | Semiconductor device including FinFET having metal gate electrode and fabricating method thereof |
US20060176928A1 (en) | 2005-02-08 | 2006-08-10 | Tokyo Electron Limited | Substrate processing apparatus, control method adopted in substrate processing apparatus and program |
US20060182885A1 (en) | 2005-02-14 | 2006-08-17 | Xinjian Lei | Preparation of metal silicon nitride films via cyclic deposition |
US20080124945A1 (en) | 2005-02-17 | 2008-05-29 | Hitachi Kokusa Electric Inc. | Production Method for Semiconductor Device and Substrate Processing Apparatus |
US20070292974A1 (en) | 2005-02-17 | 2007-12-20 | Hitachi Kokusai Electric Inc | Substrate Processing Method and Substrate Processing Apparatus |
US20120077350A1 (en) | 2005-02-17 | 2012-03-29 | Hironobu Miya | Method of producing semiconductor device |
US7498242B2 (en) | 2005-02-22 | 2009-03-03 | Asm America, Inc. | Plasma pre-treating surfaces for atomic layer deposition |
US20060185589A1 (en) | 2005-02-23 | 2006-08-24 | Raanan Zehavi | Silicon gas injector and method of making |
US20060188360A1 (en) | 2005-02-24 | 2006-08-24 | Bonora Anthony C | Direct tool loading |
CN1825535A (en) | 2005-02-25 | 2006-08-30 | Ips有限公司 | Vacuum processor |
US20060191555A1 (en) | 2005-02-28 | 2006-08-31 | Atsushi Yoshida | Method of cleaning etching apparatus |
US20060196420A1 (en) | 2005-03-02 | 2006-09-07 | Andrey Ushakov | High density plasma chemical vapor deposition apparatus |
US20060196418A1 (en) | 2005-03-04 | 2006-09-07 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
US6972478B1 (en) | 2005-03-07 | 2005-12-06 | Advanced Micro Devices, Inc. | Integrated circuit and method for its manufacture |
US20060199357A1 (en) | 2005-03-07 | 2006-09-07 | Wan Yuet M | High stress nitride film and method for formation thereof |
US20060205231A1 (en) | 2005-03-09 | 2006-09-14 | Pao-Hwa Chou | Film formation method and apparatus for semiconductor process |
US7410290B2 (en) | 2005-03-14 | 2008-08-12 | Kabushiki Kaisha Bio Echo Net | Ear-type clinical thermometer |
US20070026540A1 (en) | 2005-03-15 | 2007-02-01 | Nooten Sebastian E V | Method of forming non-conformal layers |
US20070026654A1 (en) | 2005-03-15 | 2007-02-01 | Hannu Huotari | Systems and methods for avoiding base address collisions |
US7376520B2 (en) | 2005-03-16 | 2008-05-20 | Lam Research Corporation | System and method for gas flow verification |
US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
US8227032B2 (en) | 2005-03-17 | 2012-07-24 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon oxide containing films |
WO2006097525A2 (en) | 2005-03-17 | 2006-09-21 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon oxide containing films |
US20090232985A1 (en) | 2005-03-17 | 2009-09-17 | Christian Dussarrat | Method of forming silicon oxide containing films |
US8974868B2 (en) | 2005-03-21 | 2015-03-10 | Tokyo Electron Limited | Post deposition plasma cleaning system and method |
WO2006101857A2 (en) | 2005-03-21 | 2006-09-28 | Tokyo Electron Limited | A plasma enhanced atomic layer deposition system and method |
US20060211243A1 (en) | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Deposition system and method |
US20060211224A1 (en) | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US20060211259A1 (en) | 2005-03-21 | 2006-09-21 | Maes Jan W | Silicon oxide cap over high dielectric constant films |
US7919142B2 (en) | 2005-03-22 | 2011-04-05 | Sungkyunkwan University Foundation For Corporate Collaboration | Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same |
US20060216942A1 (en) | 2005-03-23 | 2006-09-28 | Samsung Electronics Co., Ltd. | Wafer carrier for minimizing contacting area with wafers |
US7422636B2 (en) | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
US20060213439A1 (en) | 2005-03-25 | 2006-09-28 | Tadahiro Ishizaka | Plasma enhanced atomic layer deposition system having reduced contamination |
JP2006278058A (en) | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Plasma processing device |
US20060213437A1 (en) | 2005-03-28 | 2006-09-28 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system |
US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US20060223337A1 (en) | 2005-03-29 | 2006-10-05 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
US20080210162A1 (en) | 2005-03-29 | 2008-09-04 | Hitachi Kokusai Electric Inc | Substrate Processing Apparatus and Substrate Processing System |
US20060228863A1 (en) | 2005-03-29 | 2006-10-12 | Da Zhang | Method for making a semiconductor device with strain enhancement |
USD559993S1 (en) | 2005-03-30 | 2008-01-15 | Tokyo Electron Limited | Cover ring |
US20060228898A1 (en) | 2005-03-30 | 2006-10-12 | Cory Wajda | Method and system for forming a high-k dielectric layer |
USD559994S1 (en) | 2005-03-30 | 2008-01-15 | Tokyo Electron Limited | Cover ring |
US20060219363A1 (en) | 2005-03-31 | 2006-10-05 | Naoki Matsumoto | Capacitive coupling plasma processing apparatus and method for using the same |
US8298336B2 (en) | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
US20060219361A1 (en) | 2005-04-01 | 2006-10-05 | Lam Research Corporation | High strip rate downstream chamber |
US8425682B2 (en) | 2005-04-01 | 2013-04-23 | Lam Research Corporation | High strip rate downstream chamber |
US7479198B2 (en) | 2005-04-07 | 2009-01-20 | Timothy D'Annunzio | Methods for forming nanofiber adhesive structures |
US20060264066A1 (en) | 2005-04-07 | 2006-11-23 | Aviza Technology, Inc. | Multilayer multicomponent high-k films and methods for depositing the same |
US20090017733A1 (en) | 2005-04-19 | 2009-01-15 | Ebara Corporation | Substrate processing apparatus |
US20070123037A1 (en) | 2005-04-19 | 2007-05-31 | Ji-Young Lee | Method of forming pattern using fine pitch hard mask |
US20060240574A1 (en) | 2005-04-20 | 2006-10-26 | Toru Yoshie | Method for manufacturing semiconductor device |
US20080274369A1 (en) | 2005-04-21 | 2008-11-06 | Lee Eal H | Novel Ruthenium-Based Materials and Ruthenium Alloys, Their Use in Vapor Deposition or Atomic Layer Deposition and Films Produced Therefrom |
US20060240662A1 (en) | 2005-04-25 | 2006-10-26 | Sharp Laboratories Of America, Inc. | Method to perform selective atomic layer deposition of zinc oxide |
WO2006114781A2 (en) | 2005-04-26 | 2006-11-02 | University College Cork - National University Of Ireland, Cork | Deposition of materials |
US7544398B1 (en) | 2005-04-26 | 2009-06-09 | The Regents Of The Univesity Of California | Controlled nano-doping of ultra thin films |
US7327948B1 (en) | 2005-04-26 | 2008-02-05 | Novellus Systems, Inc. | Cast pedestal with heating element and coaxial heat exchanger |
US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
US7351057B2 (en) | 2005-04-27 | 2008-04-01 | Asm International N.V. | Door plate for furnace |
US20060247404A1 (en) | 2005-04-29 | 2006-11-02 | Todd Michael A | Apparatus, precursors and deposition methods for silicon-containing materials |
US7084060B1 (en) | 2005-05-04 | 2006-08-01 | International Business Machines Corporation | Forming capping layer over metal wire structure using selective atomic layer deposition |
US20060252351A1 (en) | 2005-05-04 | 2006-11-09 | Micrel, Incorporated | Wafer carrier checker and method of using same |
US20060252228A1 (en) | 2005-05-05 | 2006-11-09 | Pei-Ren Jeng | Shallow trench isolation structure having reduced dislocation density |
US7214630B1 (en) | 2005-05-06 | 2007-05-08 | Novellus Systems, Inc. | PMOS transistor with compressive dielectric capping layer |
US20060249175A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
US20060254514A1 (en) | 2005-05-11 | 2006-11-16 | Kang Hee C | Catalyst enhanced chemical vapor deposition apparatus |
US7432476B2 (en) | 2005-05-12 | 2008-10-07 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
JP2006319261A (en) | 2005-05-16 | 2006-11-24 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
US20060258173A1 (en) | 2005-05-16 | 2006-11-16 | Manchao Xiao | Precursors for CVD silicon carbo-nitride films |
US7312162B2 (en) | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
US20060260545A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature absorption layer deposition and high speed optical annealing system |
US20060263540A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US20060264060A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature plasma deposition process for carbon layer deposition |
US7101763B1 (en) | 2005-05-17 | 2006-09-05 | International Business Machines Corporation | Low capacitance junction-isolation for bulk FinFET technology |
US7422775B2 (en) | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US20060263522A1 (en) | 2005-05-19 | 2006-11-23 | Piezonics Co., Ltd. | Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof |
US20090045749A1 (en) | 2005-05-20 | 2009-02-19 | Shibaura Mechatronics Corporation | Plasma generating apparatus and plasma treatment apparatus |
US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
US20120196450A1 (en) | 2005-05-26 | 2012-08-02 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure |
US20080020591A1 (en) | 2005-05-26 | 2008-01-24 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure |
US8129290B2 (en) | 2005-05-26 | 2012-03-06 | Applied Materials, Inc. | Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure |
US20060269692A1 (en) | 2005-05-26 | 2006-11-30 | Applied Materials, Inc. A Delaware Corporation | Method to increase the compressive stress of PECVD silicon nitride films |
US8138104B2 (en) | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
US20060269690A1 (en) | 2005-05-27 | 2006-11-30 | Asm Japan K.K. | Formation technology for nanoparticle films having low dielectric constant |
US20090029564A1 (en) | 2005-05-31 | 2009-01-29 | Tokyo Electron Limited | Plasma treatment apparatus and plasma treatment method |
US20060275710A1 (en) | 2005-06-02 | 2006-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20060275933A1 (en) | 2005-06-02 | 2006-12-07 | Applied Materials, Inc. | Thermally conductive ceramic tipped contact thermocouple |
KR20060129566A (en) | 2005-06-07 | 2006-12-18 | 주식회사 알지비 | Structure of susceptor inside plasma enhanced chemical vapor deposition device |
US20100224130A1 (en) | 2005-06-08 | 2010-09-09 | Jacob Smith | Rotating substrate support and methods of use |
WO2007027165A1 (en) | 2005-06-09 | 2007-03-08 | Axcelis Technologies, Inc. | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications |
US20090035947A1 (en) | 2005-06-13 | 2009-02-05 | Hitachi Kokusai Electric Inc. | Manufacturing Method of Semiconductor Device, and Substrate Processing Apparatus |
US20060278524A1 (en) | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
US20070062453A1 (en) | 2005-06-15 | 2007-03-22 | Tokyo Electron Limited | Substrate processing method, computer readable recording medium and substrate processing apparatus |
US20090277510A1 (en) | 2005-06-17 | 2009-11-12 | Fujikin Incorporated | Fluid control device |
US20060283629A1 (en) | 2005-06-17 | 2006-12-21 | Nec Corporation | Wiring board and method for manufacturing the same |
US7473655B2 (en) | 2005-06-17 | 2009-01-06 | Applied Materials, Inc. | Method for silicon based dielectric chemical vapor deposition |
US20060286818A1 (en) | 2005-06-17 | 2006-12-21 | Yaxin Wang | Method for silicon based dielectric chemical vapor deposition |
US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286819A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
US20060286775A1 (en) | 2005-06-21 | 2006-12-21 | Singh Kaushal K | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20100018460A1 (en) | 2005-06-21 | 2010-01-28 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20090194233A1 (en) | 2005-06-23 | 2009-08-06 | Tokyo Electron Limited | Component for semicondutor processing apparatus and manufacturing method thereof |
US7618226B2 (en) | 2005-06-24 | 2009-11-17 | Asm Japan K.K. | Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same |
US20060292310A1 (en) | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
US8076230B2 (en) | 2005-07-01 | 2011-12-13 | Macronix International Co. Ltd. | Method of forming self-aligned contacts and local interconnects |
US20070020160A1 (en) | 2005-07-07 | 2007-01-25 | Mks Instruments, Inc. | Ozone system for multi-chamber tools |
US20070031598A1 (en) | 2005-07-08 | 2007-02-08 | Yoshikazu Okuyama | Method for depositing silicon-containing films |
US20070010072A1 (en) | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
US20100221452A1 (en) | 2005-07-09 | 2010-09-02 | Bang-Kwon Kang | Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma |
US7579285B2 (en) | 2005-07-11 | 2009-08-25 | Imec | Atomic layer deposition method for depositing a layer |
US20070098527A1 (en) | 2005-07-11 | 2007-05-03 | Hall Daniel A | Equipment storage for substrate processing apparatus |
US7925378B2 (en) | 2005-07-11 | 2011-04-12 | Brooks Automation, Inc. | Process apparatus with on-the-fly workpiece centering |
US7320544B2 (en) | 2005-07-13 | 2008-01-22 | Actherm, Inc. | Conducting structure and electronic clinical thermometer embodying the structure |
US20070014919A1 (en) | 2005-07-15 | 2007-01-18 | Jani Hamalainen | Atomic layer deposition of noble metal oxides |
US20070020830A1 (en) | 2005-07-21 | 2007-01-25 | International Business Machines Corporation | IMPROVED CMOS (Complementary Metal Oxide Semiconductor) TECHNOLOGY |
US20070020953A1 (en) | 2005-07-21 | 2007-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a high density dielectric film by chemical vapor deposition |
US20080211526A1 (en) | 2005-07-25 | 2008-09-04 | Kenji Shinma | Wafer holder, heater unit used for wafer prober and having wafer holder, and wafer prober |
CN101142012A (en) | 2005-07-26 | 2008-03-12 | 川崎成套设备股份有限公司 | Mixed fluid uniformization device and mixed fluid feeding apparatus |
US20090050621A1 (en) | 2005-07-27 | 2009-02-26 | Tomoyuki Awazu | Wafer holder, heater unit used for wafer prober having the wafer holder, and wafer prober having the heater unit |
US7640142B2 (en) | 2005-07-28 | 2009-12-29 | Nuflare Technology, Inc. | Position measurement apparatus and method and pattern forming apparatus and writing method |
USD571831S1 (en) | 2005-07-29 | 2008-06-24 | Tokyo Electron Limited | Top panel for microwave introduction window of a plasma processing apparatus |
US20070026148A1 (en) | 2005-07-29 | 2007-02-01 | Nuflare Technology, Inc. | Vapor phase deposition apparatus and vapor phase deposition method |
USD571383S1 (en) | 2005-07-29 | 2008-06-17 | Tokyo Electron Limited | Top panel for microwave introduction window of a plasma processing apparatus |
USD593585S1 (en) | 2005-07-29 | 2009-06-02 | Tokyo Electron Limited | Top panel for microwave introduction window of a plasma processing apparatus |
US20070026162A1 (en) | 2005-07-29 | 2007-02-01 | Hung-Wen Wei | Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof |
US20070028842A1 (en) | 2005-08-02 | 2007-02-08 | Makoto Inagawa | Vacuum chamber bottom |
US20090047447A1 (en) | 2005-08-02 | 2009-02-19 | Sawin Herbert H | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor |
US20090045829A1 (en) | 2005-08-04 | 2009-02-19 | Sumitomo Electric Industries, Ltd. | Wafer holder for wafer prober and wafer prober equipped with same |
US20100105936A1 (en) | 2005-08-04 | 2010-04-29 | Tosoh Corporation | Metal-containing compound, its production method, metal-containing thin film, and its formation method |
US20090291566A1 (en) | 2005-08-05 | 2009-11-26 | Masaaki Ueno | Substrate Processing Apparatus, Coolant Gas Supply Nozzle and Semiconductor Device Manufacturing Method |
US20100162956A1 (en) | 2005-08-05 | 2010-07-01 | Seishi Murakami | Substrate Processing Apparatus and Substrate Mount Table Used in the Apparatus |
US20070037412A1 (en) | 2005-08-05 | 2007-02-15 | Tokyo Electron Limited | In-situ atomic layer deposition |
US7429532B2 (en) | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US20070032004A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US20070032054A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US7335611B2 (en) | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US20070032082A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US20070032095A1 (en) | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US7312148B2 (en) | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US20070037343A1 (en) | 2005-08-10 | 2007-02-15 | Texas Instruments Inc. | Process for manufacturing dual work function metal gates in a microelectronics device |
US20070034477A1 (en) | 2005-08-10 | 2007-02-15 | Daifuku Co., Ltd. | Article transport device |
US8709162B2 (en) | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US20090130331A1 (en) | 2005-08-16 | 2009-05-21 | Hitachi Kokusai Electric Inc. | Method of Forming Thin Film and Method of Manufacturing Semiconductor Device |
US20070042117A1 (en) | 2005-08-17 | 2007-02-22 | Applied Materials, Inc. | Method and apparatus to control semiconductor film deposition characteristics |
US20090211523A1 (en) | 2005-08-17 | 2009-08-27 | Applied Materials, Inc. | Apparatus to Control Semiconductor Film Deposition Characteristics |
US20070044716A1 (en) | 2005-08-24 | 2007-03-01 | Tsutomu Tetsuka | Plasma processing apparatus |
US20090011145A1 (en) | 2005-08-24 | 2009-01-08 | Electronics And Telecommunications Research Instit Ute | Method of Manufacturing Vanadium Oxide Thin Film |
US20070045244A1 (en) | 2005-08-24 | 2007-03-01 | Samsung Electronics Co., Ltd. | Microwave resonance plasma generating apparatus and plasma processing system having the same |
US20080149593A1 (en) | 2005-08-25 | 2008-06-26 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
USD556704S1 (en) | 2005-08-25 | 2007-12-04 | Hitachi High-Technologies Corporation | Grounded electrode for a plasma processing apparatus |
USD557226S1 (en) | 2005-08-25 | 2007-12-11 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US20070049053A1 (en) | 2005-08-26 | 2007-03-01 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
WO2007024720A2 (en) | 2005-08-26 | 2007-03-01 | Applied Materials, Inc. | Pretreatment processes within a batch ald reactor |
US20080261413A1 (en) | 2005-08-26 | 2008-10-23 | Maitreyee Mahajani | Pretreatment processes within a batch ald reactor |
US7393736B2 (en) | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
US20080224240A1 (en) | 2005-08-29 | 2008-09-18 | Micron Technology, Inc. | ATOMIC LAYER DEPOSITION OF Zrx Hfy Sn1-x-y O2 FILMS AS HIGH k GATE DIELECTRICS |
USD558888S1 (en) * | 2005-08-30 | 2008-01-01 | Chemglass, Inc. | Reaction block for chemical synthesis for use upon a hot plate stirrer |
US7494267B2 (en) * | 2005-08-30 | 2009-02-24 | Chemglass, Inc. | Reaction block for supporting flasks of different sizes for chemical synthesis on a hot plate stirrer |
US20070048953A1 (en) | 2005-08-30 | 2007-03-01 | Micron Technology, Inc. | Graded dielectric layers |
US20120202358A1 (en) | 2005-08-30 | 2012-08-09 | Dan Gealy | Graded dielectric structures |
US20070047384A1 (en) | 2005-09-01 | 2007-03-01 | Mclaughlin Jon K | Control system for and method of combining materials |
US20100046321A1 (en) | 2005-09-01 | 2010-02-25 | Mclaughlin Jon Kevin | Control System For and Method of Combining Materials |
US20070054499A1 (en) | 2005-09-06 | 2007-03-08 | Terasemicon Co., Ltd. | Apparatus and method for forming polycrystalline silicon thin film |
US20070190362A1 (en) | 2005-09-08 | 2007-08-16 | Weidman Timothy W | Patterned electroless metallization processes for large area electronics |
US8052794B2 (en) | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
US20070056843A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056850A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070065597A1 (en) | 2005-09-15 | 2007-03-22 | Asm Japan K.K. | Plasma CVD film formation apparatus provided with mask |
US20070066084A1 (en) | 2005-09-21 | 2007-03-22 | Cory Wajda | Method and system for forming a layer with controllable spstial variation |
US20070062439A1 (en) | 2005-09-21 | 2007-03-22 | Naoyuki Wada | Temperature Control Method of Epitaxial Growth Apparatus |
US20070065578A1 (en) | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
US7833348B2 (en) | 2005-09-21 | 2010-11-16 | Sumco Corporation | Temperature control method of epitaxial growth apparatus |
US20070066010A1 (en) | 2005-09-21 | 2007-03-22 | Takashi Ando | Method of manufacturing semiconductor device |
US7497614B2 (en) | 2005-09-22 | 2009-03-03 | Lam Research Corporation | Apparatus for determining a temperature of a substrate and methods therefor |
US20090137055A1 (en) | 2005-09-30 | 2009-05-28 | Bognar John A | Measuring nitrogen oxides and other gases by ozone formation |
US20070077355A1 (en) | 2005-09-30 | 2007-04-05 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
US20110232678A1 (en) | 2005-09-30 | 2011-09-29 | Lam Research Corporation | Extending storage time of removed plasma chamber components prior to cleaning thereof |
US20070074665A1 (en) | 2005-09-30 | 2007-04-05 | Applied Materials, Inc. | Apparatus temperature control and pattern compensation |
USD541125S1 (en) | 2005-10-05 | 2007-04-24 | Powers Products Iii, Llc | Fastener slide |
US20070082500A1 (en) | 2005-10-07 | 2007-04-12 | Norman John A T | Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides |
US20070082132A1 (en) | 2005-10-07 | 2007-04-12 | Asm Japan K.K. | Method for forming metal wiring structure |
US20070082508A1 (en) | 2005-10-11 | 2007-04-12 | Chiang Tony P | Methods for discretized processing and process sequence integration of regions of a substrate |
US20100051584A1 (en) | 2005-10-12 | 2010-03-04 | Shogo Okita | Plasma processing apparatus and plasma processing method |
US20090255901A1 (en) | 2005-10-12 | 2009-10-15 | Shogo Okita | Plasma processing apparatus, plasma processing method, and tray |
US7736528B2 (en) | 2005-10-12 | 2010-06-15 | Panasonic Corporation | Plasma processing apparatus and plasma processing method |
US9773818B2 (en) | 2005-10-14 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device having transparent conductive film and metal film |
US20090039475A1 (en) | 2005-10-14 | 2009-02-12 | Yoshimi Shioya | Apparatus and Method for Manufacturing Semiconductor |
US7294581B2 (en) | 2005-10-17 | 2007-11-13 | Applied Materials, Inc. | Method for fabricating silicon nitride spacer structures |
US20070087515A1 (en) | 2005-10-17 | 2007-04-19 | Applied Materials, Inc. | Low stress STI films and methods |
US7691205B2 (en) | 2005-10-18 | 2010-04-06 | Asm Japan K.K. | Substrate-supporting device |
US20070087296A1 (en) | 2005-10-18 | 2007-04-19 | Samsung Electronics Co., Ltd. | Gas supply device and apparatus for processing a substrate |
US20070089670A1 (en) | 2005-10-18 | 2007-04-26 | Asm Japan K.K. | Substrate-supporting device |
US20080213696A1 (en) | 2005-10-20 | 2008-09-04 | Agfa Graphics Nv | Negative Working, Heat-Sensitive, Lithographic Printing Plate Precursor |
US20070111030A1 (en) | 2005-10-21 | 2007-05-17 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant multilayer member |
US20070092696A1 (en) | 2005-10-21 | 2007-04-26 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant member |
US20070148350A1 (en) | 2005-10-27 | 2007-06-28 | Antti Rahtu | Enhanced thin film deposition |
US7994721B2 (en) | 2005-10-27 | 2011-08-09 | Luxim Corporation | Plasma lamp and methods using a waveguide body and protruding bulb |
US20070252532A1 (en) | 2005-10-27 | 2007-11-01 | Devincentis Marc | Plasma lamp with stable feedback amplification and method therefor |
US20080054813A1 (en) | 2005-10-27 | 2008-03-06 | Luxim Corporation | Plasma lamp with conductive material positioned relative to rf feed |
US20070241688A1 (en) | 2005-10-27 | 2007-10-18 | Devincentis Marc | Plasma lamp with conductive material positioned relative to rf feed |
US7638951B2 (en) | 2005-10-27 | 2009-12-29 | Luxim Corporation | Plasma lamp with stable feedback amplification and method therefor |
US20120149207A1 (en) | 2005-10-31 | 2012-06-14 | Graff Wesley P | Method for etching organic hardmasks |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US7736600B2 (en) | 2005-10-31 | 2010-06-15 | Applied Materials, Inc. | Apparatus for manufacturing a process abatement reactor |
US20070095283A1 (en) | 2005-10-31 | 2007-05-03 | Galewski Carl J | Pumping System for Atomic Layer Deposition |
US20070096194A1 (en) | 2005-10-31 | 2007-05-03 | Christof Streck | Technique for strain engineering in si-based transistors by using embedded semiconductor layers including atoms with high covalent radius |
US20070131168A1 (en) | 2005-10-31 | 2007-06-14 | Hisashi Gomi | Gas Supplying unit and substrate processing apparatus |
US20070119370A1 (en) | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US20080268171A1 (en) | 2005-11-04 | 2008-10-30 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US7695808B2 (en) | 2005-11-07 | 2010-04-13 | 3M Innovative Properties Company | Thermal transfer coating |
US9184047B2 (en) | 2005-11-09 | 2015-11-10 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US8642488B2 (en) | 2005-11-09 | 2014-02-04 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US9443725B2 (en) | 2005-11-09 | 2016-09-13 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US7561982B2 (en) | 2005-11-10 | 2009-07-14 | Shake Awake Products, LLC | Physical attribute recording method and system |
US8041197B2 (en) | 2005-11-14 | 2011-10-18 | Tokyo Electron Limited | Heating apparatus, heat treatment apparatus, computer program and storage medium |
US20090087967A1 (en) | 2005-11-14 | 2009-04-02 | Todd Michael A | Precursors and processes for low temperature selective epitaxial growth |
US7589028B1 (en) | 2005-11-15 | 2009-09-15 | Novellus Systems, Inc. | Hydroxyl bond removal and film densification method for oxide films using microwave post treatment |
US20070123060A1 (en) | 2005-11-16 | 2007-05-31 | Rahtu Antti H | Method for the deposition of a film by CVD or ALD |
US20070111545A1 (en) | 2005-11-16 | 2007-05-17 | Sung-Hae Lee | Methods of forming silicon dioxide layers using atomic layer deposition |
US20080282970A1 (en) | 2005-11-16 | 2008-11-20 | Peter Nicholas Heys | Cyclopentadienyl Type Hafnium and Zirconium Precursors and Use Thereof in Atomic Layer Deposition |
US20070116887A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US7897217B2 (en) | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
US20110135842A1 (en) | 2005-11-18 | 2011-06-09 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20120315404A1 (en) | 2005-11-18 | 2012-12-13 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116872A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116888A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20090130859A1 (en) | 2005-11-18 | 2009-05-21 | Hitachi Kokusai Electric Inc. | Semiconductor Device Manufacturing Method and Substrate Processing Apparatus |
WO2007076195A2 (en) | 2005-11-22 | 2007-07-05 | Genus, Inc. | Small volume symmetric flow single wafer ald apparatus |
US20090320881A1 (en) | 2005-11-23 | 2009-12-31 | The Boc Group, Inc. | Use of spectroscopic techniques to monitor and control reactant gas input into a pre-pump reactive gas injection system |
US7629277B2 (en) | 2005-11-23 | 2009-12-08 | Honeywell International Inc. | Frag shield |
US20070123189A1 (en) | 2005-11-25 | 2007-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
US20070120275A1 (en) | 2005-11-28 | 2007-05-31 | Msp Corporation | High stability and high capacity precursor vapor generation for thin film deposition |
US20090242130A1 (en) | 2005-11-29 | 2009-10-01 | Tokyo Electron Limited | Plasma processing apparatus |
US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
US20070128876A1 (en) | 2005-12-02 | 2007-06-07 | Noriaki Fukiage | Chamber dry cleaning |
US7563715B2 (en) | 2005-12-05 | 2009-07-21 | Asm International N.V. | Method of producing thin films |
US8506162B2 (en) | 2005-12-05 | 2013-08-13 | Parker-Hannifin Corporation | Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications |
US20070128858A1 (en) | 2005-12-05 | 2007-06-07 | Suvi Haukka | Method of producing thin films |
US20070129621A1 (en) | 2005-12-05 | 2007-06-07 | Sontra Medical Corporation | System and method for continuous non-invasive glucose monitoring |
US8003919B2 (en) | 2005-12-06 | 2011-08-23 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
US20090250004A1 (en) | 2005-12-06 | 2009-10-08 | Ulvac, Inc. | Gas Head and Thin-Film Manufacturing Apparatus |
US20070128888A1 (en) | 2005-12-06 | 2007-06-07 | Shigehiro Goto | Substrate heat treatment apparatus |
US8608885B2 (en) | 2005-12-07 | 2013-12-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
US20070128570A1 (en) | 2005-12-07 | 2007-06-07 | Shigehiro Goto | Substrate heat treatment apparatus |
US20070134919A1 (en) | 2005-12-08 | 2007-06-14 | Tokyo Electron Limited | Film forming method and apparatus |
US20070134942A1 (en) | 2005-12-08 | 2007-06-14 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
US20070157683A1 (en) | 2005-12-19 | 2007-07-12 | Tokyo Electron Limited | Method and system for sealing a first assembly to a second assembly of a processing system |
US8454749B2 (en) | 2005-12-19 | 2013-06-04 | Tokyo Electron Limited | Method and system for sealing a first assembly to a second assembly of a processing system |
US20070264427A1 (en) | 2005-12-21 | 2007-11-15 | Asm Japan K.K. | Thin film formation by atomic layer growth and chemical vapor deposition |
US20070148347A1 (en) | 2005-12-22 | 2007-06-28 | Timo Hatanpaa | Process for producing oxide films |
US20070163490A1 (en) | 2005-12-22 | 2007-07-19 | Freiberger Compound Materials Gmbh | Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby |
US20070144442A1 (en) | 2005-12-22 | 2007-06-28 | Kyocera Corporation | Susceptor |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US20070157466A1 (en) | 2005-12-27 | 2007-07-12 | Nhk Spring Co., Ltd. | Substrate supporting apparatus and manufacturing method therefor |
US7503980B2 (en) | 2005-12-27 | 2009-03-17 | Nhk Spring Co., Ltd. | Substrate supporting apparatus |
US20070146621A1 (en) | 2005-12-28 | 2007-06-28 | Lg.Philips Lcd Co., Ltd. | Apparatus for fabricating flat panel display, and apparatus and method for detecting quantity of static electricity thereof |
US7915139B1 (en) | 2005-12-29 | 2011-03-29 | Novellus Systems, Inc. | CVD flowable gap fill |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
TWM292692U (en) | 2005-12-29 | 2006-06-21 | Powerchip Semiconductor Corp | Thermocouple apparatus |
US7405166B2 (en) | 2006-01-10 | 2008-07-29 | Industrial Technology Research Institute | Method of manufacturing charge storage device |
US20120070997A1 (en) | 2006-01-11 | 2012-03-22 | Lam Research Corporation | Gas switching section including valves having different flow coefficient's for gas distribution system |
US20070166459A1 (en) | 2006-01-16 | 2007-07-19 | Advanced Micro-Fabrication Equipment, Inc. | Assembly and method for delivering a reactant material onto a substrate |
TW200731357A (en) | 2006-01-18 | 2007-08-16 | Tokyo Electron Ltd | Plasma processing apparatus and controlling method for plasma processing apparatus |
US20070163996A1 (en) | 2006-01-18 | 2007-07-19 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20080202416A1 (en) | 2006-01-19 | 2008-08-28 | Provencher Timothy J | High temperature ALD inlet manifold |
US20070163440A1 (en) | 2006-01-19 | 2007-07-19 | Atto Co., Ltd. | Gas separation type showerhead |
US20130292047A1 (en) | 2006-01-20 | 2013-11-07 | Tokyo Electron Limited | Manufacturing method of top plate of plasma processing apparatus |
US20070173071A1 (en) | 2006-01-20 | 2007-07-26 | International Business Machines Corporation | SiCOH dielectric |
US20070175397A1 (en) | 2006-01-27 | 2007-08-02 | Shizuo Tomiyasu | Method for packing solid organometallic compound and packed container |
US20070175393A1 (en) | 2006-01-31 | 2007-08-02 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and storage medium storing program for implementing the method |
WO2007088940A1 (en) | 2006-02-02 | 2007-08-09 | Tokyo Electron Limited | Pressure reducing apparatus |
US7736437B2 (en) | 2006-02-03 | 2010-06-15 | Integrated Materials, Incorporated | Baffled liner cover |
KR20070079797A (en) | 2006-02-03 | 2007-08-08 | 위순임 | Substrate processing system having multi remote plasma generator |
US20070181066A1 (en) | 2006-02-03 | 2007-08-09 | Integrated Materials, Inc. | Baffled liner cover |
US20070184179A1 (en) | 2006-02-09 | 2007-08-09 | Akshay Waghray | Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc |
US20090031954A1 (en) | 2006-02-09 | 2009-02-05 | Kouichi Nishikido | Susceptor and apparatus for manufacturing epitaxial wafer |
US20070190266A1 (en) | 2006-02-10 | 2007-08-16 | Applied Materials, Inc. | Water vapor passivation of a wall facing a plasma |
US20070187362A1 (en) | 2006-02-13 | 2007-08-16 | Hideo Nakagawa | Dry etching method, fine structure formation method, mold and mold fabrication method |
US20070186952A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber |
US20070187363A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20070186849A1 (en) | 2006-02-13 | 2007-08-16 | Nec Electronics Corporation | Deposition apparatus and method for depositing film |
US20070190782A1 (en) | 2006-02-15 | 2007-08-16 | Hyung-Sang Park | Method of depositing Ru films having high density |
US20120122275A1 (en) | 2006-02-17 | 2012-05-17 | Bon Won Koo | Methods of fabricating organic thin film transistors |
US20070212827A1 (en) | 2006-02-17 | 2007-09-13 | Kunal Girotra | Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same |
KR20070084683A (en) | 2006-02-21 | 2007-08-27 | 국민대학교산학협력단 | Molecular layer deposition |
US20070207275A1 (en) | 2006-02-21 | 2007-09-06 | Applied Materials, Inc. | Enhancement of remote plasma source clean for dielectric films |
US20070205788A1 (en) | 2006-02-21 | 2007-09-06 | Sumitomo Electric Industries, Ltd. | Wafer holder, and wafer prober provided therewith |
US20070199510A1 (en) | 2006-02-24 | 2007-08-30 | Weiner Kurt H | Systems and methods for sealing in site-isolated reactors |
US20100022097A1 (en) | 2006-02-27 | 2010-01-28 | Youtec Co., Ltd. | Vaporizer, semiconductor production apparatus and process of semiconductor production |
US20070202678A1 (en) | 2006-02-28 | 2007-08-30 | Plombon John J | Catalytically enhanced atomic layer deposition process |
US20070215278A1 (en) | 2006-03-06 | 2007-09-20 | Muneo Furuse | Plasma etching apparatus and method for forming inner wall of plasma processing chamber |
US8501599B2 (en) | 2006-03-07 | 2013-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US7716993B2 (en) | 2006-03-07 | 2010-05-18 | Ckd Corporation | Gas flow rate verification unit |
US20070209590A1 (en) | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Sealing device and method for a processing system |
US20070209588A1 (en) | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Exhaust system for a vacuum processing system |
US7794546B2 (en) | 2006-03-08 | 2010-09-14 | Tokyo Electron Limited | Sealing device and method for a processing system |
US7670432B2 (en) | 2006-03-08 | 2010-03-02 | Tokyo Electron Limited | Exhaust system for a vacuum processing system |
US7740705B2 (en) | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20070212484A1 (en) | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20070210890A1 (en) | 2006-03-09 | 2007-09-13 | International Business Machines Corporation | Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer |
US7494882B2 (en) | 2006-03-10 | 2009-02-24 | Texas Instruments Incorporated | Manufacturing a semiconductive device using a controlled atomic layer removal process |
US8323413B2 (en) | 2006-03-14 | 2012-12-04 | Lg Innotek Co., Ltd | Susceptor and semiconductor manufacturing apparatus including the same |
US20070218200A1 (en) | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
US20070215048A1 (en) | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle contamination in a deposition system |
US20070215580A1 (en) | 2006-03-16 | 2007-09-20 | Tokyo Electron Limited | Plasma processing apparatus and electrode used therein |
US7566891B2 (en) | 2006-03-17 | 2009-07-28 | Applied Materials, Inc. | Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors |
US7692171B2 (en) | 2006-03-17 | 2010-04-06 | Andrzei Kaszuba | Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors |
US20110305856A1 (en) | 2006-03-17 | 2011-12-15 | L'air Liquide Societe Anonyme Pour L'etude Et I'exploitation Des Procedes Georges Claude | Hollow Body Made of Plastic Having a Barrier Layer on its Inner Surface and a Method for Manufacturing the Same |
US20090087964A1 (en) | 2006-03-20 | 2009-04-02 | Hitachi Kokusai Electric Inc. | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus |
US20070224833A1 (en) | 2006-03-23 | 2007-09-27 | Asm Japan K.K. | Method of forming carbon polymer film using plasma CVD |
US20070222131A1 (en) | 2006-03-23 | 2007-09-27 | Yasuhiro Fukumoto | Substrate support structure, heat treatment apparatus using same, first sheet-like object for use in the substrate support structure, method of manufacturing the substrate support structure, heat treatment apparatus, and substrate sucking method |
US20080044932A1 (en) | 2006-03-24 | 2008-02-21 | Samoilov Arkadii V | Carbon precursors for use during silicon epitaxial film formation |
USD549815S1 (en) | 2006-03-27 | 2007-08-28 | Murphy Timothy M | Air flow directing fixture for heating, air conditioning and ventilation devices |
US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
US20070232501A1 (en) | 2006-03-29 | 2007-10-04 | Osamu Tonomura | Manufacturing method of semiconductor integrated circuit |
US20070234955A1 (en) | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
US7910494B2 (en) | 2006-03-29 | 2011-03-22 | Tokyo Electron Limited | Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto |
US20090266296A1 (en) | 2006-03-30 | 2009-10-29 | Hiroyuki Tachibana | Atomic layer growing apparatus |
US20080149031A1 (en) | 2006-03-30 | 2008-06-26 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
US20070227665A1 (en) | 2006-03-30 | 2007-10-04 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US7645484B2 (en) | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
CN101047143A (en) | 2006-03-31 | 2007-10-03 | 东京毅力科创株式会社 | Basal plate carrying table and basal plate processing device |
US7753584B2 (en) | 2006-03-31 | 2010-07-13 | Mesoscribe Technologies, Inc. | Thermocouples |
US20070232071A1 (en) | 2006-03-31 | 2007-10-04 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
US20110092077A1 (en) | 2006-03-31 | 2011-04-21 | Huiwen Xu | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
US8445075B2 (en) | 2006-03-31 | 2013-05-21 | Applied Materials, Inc. | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
US20070237699A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
US7737035B1 (en) | 2006-03-31 | 2010-06-15 | Novellus Systems, Inc. | Dual seal deposition process chamber and process |
US20070237697A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition |
US20070237698A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
US7396491B2 (en) | 2006-04-06 | 2008-07-08 | Osram Sylvania Inc. | UV-emitting phosphor and lamp containing same |
USD614258S1 (en) | 2006-04-06 | 2010-04-20 | Anemos Company Ltd. | Motionless mixer |
US20090053900A1 (en) | 2006-04-07 | 2009-02-26 | Tokyo Electron Limited | Processing Apparatus and Processing Method |
US7732343B2 (en) | 2006-04-07 | 2010-06-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
WO2007117718A2 (en) | 2006-04-07 | 2007-10-18 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US20070238305A1 (en) | 2006-04-11 | 2007-10-11 | Applied Materials, Inc. | Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material |
JP2007287902A (en) | 2006-04-17 | 2007-11-01 | Hitachi High-Technologies Corp | Dry etching method |
US20080038934A1 (en) | 2006-04-18 | 2008-02-14 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
US20070248767A1 (en) | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US20070248832A1 (en) | 2006-04-20 | 2007-10-25 | Shin-Etsu Chemical Co., Ltd. | Conductive, plasma-resistant member |
US20070249131A1 (en) | 2006-04-21 | 2007-10-25 | International Business Machines Corporation | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors |
US20070247075A1 (en) | 2006-04-21 | 2007-10-25 | Applied Materials, Inc. | Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone |
US20070251444A1 (en) | 2006-04-25 | 2007-11-01 | Stmicroelectronics S.A. | PEALD Deposition of a Silicon-Based Material |
US20070254414A1 (en) | 2006-04-26 | 2007-11-01 | Sony Corporation | Method of manufacturing semiconductor device, and semiconductor device |
US20070251456A1 (en) | 2006-04-27 | 2007-11-01 | Applied Materials, Inc., A Delaware Corporation | Composite heater and chill plate |
US8231799B2 (en) | 2006-04-28 | 2012-07-31 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
US20070252244A1 (en) | 2006-04-28 | 2007-11-01 | Micron Technology, Inc. | Methods of forming material over substrates |
US20070259778A1 (en) | 2006-04-28 | 2007-11-08 | Syracuse University | Flameless heating system |
US7923382B2 (en) | 2006-04-28 | 2011-04-12 | Asm International N.V. | Method for forming roughened surface |
US20070252233A1 (en) | 2006-04-28 | 2007-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
US7547633B2 (en) | 2006-05-01 | 2009-06-16 | Applied Materials, Inc. | UV assisted thermal processing |
US20070258506A1 (en) | 2006-05-02 | 2007-11-08 | Schwagerman William H | Temperature sensors and methods of manufacture thereof |
US7997795B2 (en) | 2006-05-02 | 2011-08-16 | Watlow Electric Manufacturing Company | Temperature sensors and methods of manufacture thereof |
WO2007131051A1 (en) | 2006-05-05 | 2007-11-15 | Applied Materials, Inc. | Method for fabricating a gate dielectric of a field effect transistor |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US20070264793A1 (en) | 2006-05-12 | 2007-11-15 | Samsung Electronics Company, Ltd. | Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers |
US20070261868A1 (en) | 2006-05-12 | 2007-11-15 | Gross James R | Magnetic torque-limiting device and method |
US20070266945A1 (en) | 2006-05-16 | 2007-11-22 | Asm Japan K.K. | Plasma cvd apparatus equipped with plasma blocking insulation plate |
US20070266932A1 (en) | 2006-05-18 | 2007-11-22 | Kabushiki Kaisha Toshiba | Vapor phase growth apparatus and method for vapor phase growth |
US20070275166A1 (en) | 2006-05-23 | 2007-11-29 | Hareesh Thridandam | Process for producing silicon oxide films from organoaminosilane precursors |
US20110262642A1 (en) | 2006-05-23 | 2011-10-27 | Air Products And Chemicals, Inc. | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors |
US20100144968A1 (en) | 2006-05-26 | 2010-06-10 | Ineos Manufacturing Belgium Nv | Slurry phase polymerisation process |
WO2007140376A2 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | A method for depositing and curing low-k films for gapfill and conformal film applications |
US20070281496A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US20080026597A1 (en) | 2006-05-30 | 2008-01-31 | Applied Materials, Inc. | Method for depositing and curing low-k films for gapfill and conformal film applications |
US20070289534A1 (en) | 2006-05-30 | 2007-12-20 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US20090163038A1 (en) | 2006-05-31 | 2009-06-25 | Tokyo Electron Limited | Heat treatment method, heat treatment apparatus and substrate processing apparatus |
US20070277735A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281105A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281082A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
US8668957B2 (en) | 2006-06-02 | 2014-03-11 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming dielectric films, new precursors and their use in semiconductor manufacturing |
US7623940B2 (en) | 2006-06-02 | 2009-11-24 | The Boeing Company | Direct-manufactured duct interconnects |
US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
US20080018004A1 (en) | 2006-06-09 | 2008-01-24 | Air Products And Chemicals, Inc. | High Flow GaCl3 Delivery |
KR20070117817A (en) | 2006-06-09 | 2007-12-13 | 주식회사 아이피에스 | Method of depositing dielectric layer with increased gap-fill ability |
US20090286405A1 (en) | 2006-06-13 | 2009-11-19 | Tokyo Electron Limited | Shower plate, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate |
US20090324971A1 (en) | 2006-06-16 | 2009-12-31 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
US20090104351A1 (en) | 2006-06-20 | 2009-04-23 | Tokyo Electron Limited | Film forming apparatus and method, gas supply device and storage medium |
US7625820B1 (en) | 2006-06-21 | 2009-12-01 | Novellus Systems, Inc. | Method of selective coverage of high aspect ratio structures with a conformal film |
US20080003838A1 (en) | 2006-06-22 | 2008-01-03 | Asm International N.V. | Deposition of complex nitride films |
US20070298565A1 (en) | 2006-06-22 | 2007-12-27 | Chun-Feng Nieh | Junction leakage reduction in SiGe process by implantation |
US20110041764A1 (en) | 2006-06-26 | 2011-02-24 | Aaron Webb | Batch processing platform for ald and cvd |
US20070298362A1 (en) | 2006-06-26 | 2007-12-27 | Applied Materials, Inc. | Increased tool utilization/reduction in mwbc for uv curing chamber |
US20080121626A1 (en) | 2006-06-27 | 2008-05-29 | Thomas Timothy N | Dynamic surface annealing using addressable laser array with pyrometry feedback |
US20070295602A1 (en) | 2006-06-27 | 2007-12-27 | Tiller Jennifer W | Ground shield with reentrant feature |
US20080003824A1 (en) | 2006-06-28 | 2008-01-03 | Deenesh Padhi | Method For Depositing an Amorphous Carbon Film with Improved Density and Step Coverage |
US20080153311A1 (en) | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
US8051799B2 (en) | 2006-06-29 | 2011-11-08 | Renesas Electronics Corporation | Object-processing apparatus controlling production of particles in electric field or magnetic field |
US20090183520A1 (en) | 2006-06-29 | 2009-07-23 | Daikin Industries, Ltd | Expansion valve with refrigerant flow dividing structure and refrigeration unit utilizing the same |
US7501355B2 (en) | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
US20080003425A1 (en) | 2006-06-29 | 2008-01-03 | Spencer James T | Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings |
US8043972B1 (en) | 2006-06-30 | 2011-10-25 | Novellus Systems, Inc. | Adsorption based material removal process |
EP2036600A1 (en) | 2006-07-04 | 2009-03-18 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Apparatus and method for the concentration and dilution of specific gas |
US20100162752A1 (en) | 2006-07-04 | 2010-07-01 | Toshiba Mitsubishi Electric Industrial Systems | Apparatus for concentrating and diluting specific gas and method for concentrating and diluting specific gas |
US20080006208A1 (en) | 2006-07-05 | 2008-01-10 | Sumitomo Electric Industries, Ltd. | Metal organic chemical vapor deposition equipment |
US20080043803A1 (en) | 2006-07-06 | 2008-02-21 | Komatsu Ltd. | Temperature sensor, temperature control device, temperature controller and temperature-control method |
US20100170441A1 (en) | 2006-07-10 | 2010-07-08 | Won Seok-Jun | Method of Forming Metal Oxide and Apparatus for Performing the Same |
US20080031708A1 (en) | 2006-07-10 | 2008-02-07 | Bonora Anthony C | Variable lot size load port |
US7850449B2 (en) | 2006-07-13 | 2010-12-14 | Samsung Electronics Co., Ltd. | Heat treatment equipment |
USRE47145E1 (en) | 2006-07-20 | 2018-11-27 | Kawasaki Jukogyo Kabushiki Kaisha | Wafer transfer apparatus and substrate transfer apparatus |
US20090053906A1 (en) | 2006-07-20 | 2009-02-26 | Hironobu Miya | Semiconductor Device Producing Method and Substrate Processing Apparatus |
US20080020593A1 (en) | 2006-07-21 | 2008-01-24 | Wang Chang-Gong | ALD of metal silicate films |
US7795160B2 (en) | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
US20080072821A1 (en) | 2006-07-21 | 2008-03-27 | Dalton Jeremic J | Small volume symmetric flow single wafer ald apparatus |
US20080075881A1 (en) | 2006-07-26 | 2008-03-27 | Won Seok-Jun | Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition |
US20120027547A1 (en) | 2006-07-26 | 2012-02-02 | Jaeger Erich | Apparatus for storage of objects from the field of manufacture of electronic components |
US20100012153A1 (en) | 2006-07-27 | 2010-01-21 | Takamitsu Shigemoto | Method of cleaning film forming apparatus and film forming apparatus |
US20080023436A1 (en) | 2006-07-27 | 2008-01-31 | Stmicroelectronics S.A. | Deposition by adsorption under an electrical field |
US20080026162A1 (en) | 2006-07-29 | 2008-01-31 | Dickey Eric R | Radical-enhanced atomic layer deposition system and method |
US8187679B2 (en) | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
US20080042165A1 (en) | 2006-08-02 | 2008-02-21 | Sony Corporation | Semiconductor device and method for manufacturing semiconductor device |
US20080029790A1 (en) | 2006-08-03 | 2008-02-07 | Micron Technology, Inc. | ALD of silicon films on germanium |
US20100000608A1 (en) | 2006-08-03 | 2010-01-07 | Hitachi Metals, Ltd. | Flow rate control using mass flow rate control device |
US7514375B1 (en) | 2006-08-08 | 2009-04-07 | Novellus Systems, Inc. | Pulsed bias having high pulse frequency for filling gaps with dielectric material |
US20100126605A1 (en) | 2006-08-08 | 2010-05-27 | Edwards Limited | Apparatus for conveying a waste stream |
US20080035306A1 (en) | 2006-08-08 | 2008-02-14 | White John M | Heating and cooling of substrate support |
US20080038485A1 (en) | 2006-08-08 | 2008-02-14 | Asm Japan K.K. | Method for forming silicon carbide film containing oxygen |
US20080035055A1 (en) | 2006-08-08 | 2008-02-14 | Tokyo Electron Limited | Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system |
US20080036354A1 (en) | 2006-08-11 | 2008-02-14 | Martin Letz | External electrode fluorescent lamp with optimized operating efficiency |
US20110204025A1 (en) | 2006-08-15 | 2011-08-25 | Tokyo Electron Limited | Substrate processing method |
US20080044938A1 (en) | 2006-08-15 | 2008-02-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for low-temperature ion implantation |
US20110027999A1 (en) | 2006-08-16 | 2011-02-03 | Freescale Semiconductor, Inc. | Etch method in the manufacture of an integrated circuit |
US20080042192A1 (en) | 2006-08-18 | 2008-02-21 | Samsung Electronics Co., Ltd. | Semiconductor memory device including charge trap layer with stacked nitride layers |
US20090320754A1 (en) | 2006-08-23 | 2009-12-31 | Horiba Stec, Co., Ltd. | Integrated gas panel apparatus |
US20090053023A1 (en) | 2006-08-25 | 2009-02-26 | Shinji Wakabayashi | Wafer transfer apparatus, wafer transfer method and storage medium |
US20080056860A1 (en) | 2006-08-28 | 2008-03-06 | Shinko Electric Co., Ltd. | Load port device |
US7690881B2 (en) | 2006-08-30 | 2010-04-06 | Asm Japan K.K. | Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus |
US7611980B2 (en) | 2006-08-30 | 2009-11-03 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US20080063798A1 (en) | 2006-08-30 | 2008-03-13 | Kher Shreyas S | Precursors and hardware for cvd and ald |
US20080054332A1 (en) | 2006-08-30 | 2008-03-06 | Korea Research Institute Of Chemical Technology | Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition |
JP2008060304A (en) | 2006-08-31 | 2008-03-13 | Hitachi High-Technologies Corp | Method and device for plasma processing |
US20080121962A1 (en) | 2006-08-31 | 2008-05-29 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-k dielectric and metal gates |
US8821640B2 (en) | 2006-08-31 | 2014-09-02 | Advanced Technology Materials, Inc. | Solid precursor-based delivery of fluid utilizing controlled solids morphology |
US20100255198A1 (en) | 2006-08-31 | 2010-10-07 | Advanced Technology Materials, Inc. | Solid precursor-based delivery of fluid utilizing controlled solids morphology |
US20080124908A1 (en) | 2006-08-31 | 2008-05-29 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US7902582B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
US20080057659A1 (en) | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
US20080146033A1 (en) | 2006-09-04 | 2008-06-19 | Kyung-Min Park | Gap-filling method of semiconductor device |
US8246900B2 (en) | 2006-09-05 | 2012-08-21 | Tokyo Electron Limited | Annealing apparatus |
US7789559B2 (en) | 2006-09-06 | 2010-09-07 | Kistler Holding Ag | Temperature sensor with processable front |
US8020315B2 (en) | 2006-09-07 | 2011-09-20 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus, and program storage medium |
WO2008029943A1 (en) * | 2006-09-08 | 2008-03-13 | Semiconductor & Display Corporation | Lift pin mechanism |
JP2008066159A (en) | 2006-09-08 | 2008-03-21 | Noritsu Koki Co Ltd | Plasma generator and workpiece treatment device using it |
US20080076070A1 (en) | 2006-09-08 | 2008-03-27 | Samsung Electronics Co., Ltd. | Methods of Forming Fine Patterns In Integrated Circuits Using Atomic Layer Deposition |
US20080105276A1 (en) | 2006-09-13 | 2008-05-08 | Industrial Technology Research Institute | Method of improving surface flame resistnace of substrate |
USD613829S1 (en) | 2006-09-13 | 2010-04-13 | Hayward Industries, Inc. | Circular suction outlet assembly cover |
US20080067146A1 (en) | 2006-09-15 | 2008-03-20 | Katsuhiko Onishi | Plasma processing apparatus, method for detecting abnormality of plasma processing apparatus and plasma processing method |
US20080069951A1 (en) | 2006-09-15 | 2008-03-20 | Juan Chacin | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
US20080066778A1 (en) | 2006-09-19 | 2008-03-20 | Asm Japan K.K. | Method of cleaning uv irradiation chamber |
US7789965B2 (en) | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US20080194113A1 (en) | 2006-09-20 | 2008-08-14 | Samsung Electronics Co., Ltd. | Methods and apparatus for semiconductor etching including an electro static chuck |
US20080069955A1 (en) | 2006-09-20 | 2008-03-20 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US20110308460A1 (en) | 2006-09-20 | 2011-12-22 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US20080076266A1 (en) | 2006-09-21 | 2008-03-27 | Asm Japan K.K. | Method for forming insulation film having high density |
US8174400B2 (en) | 2006-09-21 | 2012-05-08 | Applied Materials, Inc. | Frequency monitoring to detect plasma process abnormality |
US20080081121A1 (en) | 2006-09-21 | 2008-04-03 | Fujifilm Corporation | Composition, film and formation process thereof |
US20080083710A1 (en) | 2006-09-22 | 2008-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
US20080075838A1 (en) | 2006-09-22 | 2008-03-27 | Hisashi Inoue | Oxidation apparatus and method for semiconductor process |
US20080075562A1 (en) | 2006-09-22 | 2008-03-27 | Maria De Ridder Christianus Ge | Processing system with increased cassette storage capacity |
US7740437B2 (en) | 2006-09-22 | 2010-06-22 | Asm International N.V. | Processing system with increased cassette storage capacity |
US7723648B2 (en) | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
US20080087642A1 (en) | 2006-09-25 | 2008-04-17 | Sawin Herbert H | Method for removing surface deposits in the interior of a chemical vapor deposition reactor |
US20080076281A1 (en) | 2006-09-25 | 2008-03-27 | Lightsources Inc. | Snap-lock connector |
US8172947B2 (en) | 2006-09-25 | 2012-05-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and attaching/detaching method of reaction vessel |
USD634329S1 (en) | 2006-09-26 | 2011-03-15 | Margareta Wastrom | Computer platform with forearm support |
US20080152463A1 (en) | 2006-09-27 | 2008-06-26 | Mahendran Chidambaram | Wafer processing system with dual wafer robots capable of asynchronous motion |
US7476291B2 (en) | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
JP2008085129A (en) | 2006-09-28 | 2008-04-10 | Taiheiyo Cement Corp | Substrate mounting apparatus |
US20080081104A1 (en) | 2006-09-28 | 2008-04-03 | Kazuhide Hasebe | Film formation method and apparatus for forming silicon oxide film |
US20080081113A1 (en) | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Nitrogen profile engineering in nitrided high dielectric constant films |
JP2008089320A (en) | 2006-09-29 | 2008-04-17 | Nicom Co Ltd | Flow rate measuring apparatus |
US7767262B2 (en) | 2006-09-29 | 2010-08-03 | Tokyo Electron Limited | Nitrogen profile engineering in nitrided high dielectric constant films |
US7550396B2 (en) | 2006-09-29 | 2009-06-23 | Advanced Micro Devices, Inc. | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device |
US8078310B2 (en) | 2006-10-02 | 2011-12-13 | Panasonic Corporation | Component crimping apparatus control method, component crimping apparatus, and measuring tool |
US7910452B2 (en) | 2006-10-02 | 2011-03-22 | Hynix Semiconductor Inc. | Method for fabricating a cylinder-type capacitor utilizing a connected ring structure |
US20080087218A1 (en) | 2006-10-04 | 2008-04-17 | Hitachi Kokusai Electric Inc. | Board processing apparatus and method of fabricating semiconductor apparatus |
US20080085610A1 (en) | 2006-10-05 | 2008-04-10 | Asm America, Inc. | Ald of metal silicate films |
US20080083948A1 (en) | 2006-10-05 | 2008-04-10 | Hsien-Hsin Lin | SiGe selective growth without a hard mask |
US8137462B2 (en) | 2006-10-10 | 2012-03-20 | Asm America, Inc. | Precursor delivery system |
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
WO2008045972A2 (en) | 2006-10-10 | 2008-04-17 | Asm America, Inc. | Precursor delivery system |
US20080085226A1 (en) | 2006-10-10 | 2008-04-10 | Asm America, Inc. | Precursor delivery system |
US20100322604A1 (en) | 2006-10-10 | 2010-12-23 | Kyle Fondurulia | Precursor delivery system |
US20120156108A1 (en) | 2006-10-10 | 2012-06-21 | Asm America, Inc. | Precursor delivery system |
USD614153S1 (en) | 2006-10-10 | 2010-04-20 | Asm America, Inc. | Reactant source vessel |
USD593969S1 (en) | 2006-10-10 | 2009-06-09 | Tokyo Electron Limited | Processing chamber for manufacturing semiconductors |
US20100094430A1 (en) | 2006-10-12 | 2010-04-15 | Susan Pran Krumdieck | Device |
US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
US20080092815A1 (en) | 2006-10-18 | 2008-04-24 | Advanced Micro-Fabrication Equipment, Inc. Asia | Gas distribution assembly for use in a semiconductor work piece processing reactor |
US20080102630A1 (en) | 2006-10-25 | 2008-05-01 | Elpida Memory, Inc. | Method of manufacturing semiconductor device |
US20080099147A1 (en) | 2006-10-26 | 2008-05-01 | Nyi Oo Myo | Temperature controlled multi-gas distribution assembly |
US20080102205A1 (en) | 2006-10-27 | 2008-05-01 | Barry Sean T | ALD of metal-containing films using cyclopentadienyl compounds |
US7748760B2 (en) | 2006-10-27 | 2010-07-06 | Daihen Corporation | Work holding mechanism |
US20110045610A1 (en) | 2006-10-30 | 2011-02-24 | Van Schravendijk Bart | Uv treatment for carbon-containing low-k dielectric repair in semiconductor processing |
US7851232B2 (en) | 2006-10-30 | 2010-12-14 | Novellus Systems, Inc. | UV treatment for carbon-containing low-k dielectric repair in semiconductor processing |
US8187951B1 (en) | 2006-11-01 | 2012-05-29 | Novellus Systems, Inc. | CVD flowable gap fill |
US7727864B2 (en) | 2006-11-01 | 2010-06-01 | Asm America, Inc. | Controlled composition using plasma-enhanced atomic layer deposition |
US20150004806A1 (en) | 2006-11-01 | 2015-01-01 | Lam Research Corporation | Low-k oxide deposition by hydrolysis and condensation |
US7611751B2 (en) | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
US7842518B2 (en) | 2006-11-02 | 2010-11-30 | Kabushiki Kaisha Toshiba | Method for fabricating semiconductor device |
US7955516B2 (en) | 2006-11-02 | 2011-06-07 | Applied Materials, Inc. | Etching of nano-imprint templates using an etch reactor |
US20100068891A1 (en) | 2006-11-09 | 2010-03-18 | Masanobu Hatanaka | Method of forming barrier film |
US20100001409A1 (en) | 2006-11-09 | 2010-01-07 | Nxp, B.V. | Semiconductor device and method of manufacturing thereof |
US20080110568A1 (en) | 2006-11-10 | 2008-05-15 | Adp Engineering Co., Ltd. | Process chamber having gate slit opening and closing apparatus |
US20080135516A1 (en) | 2006-11-10 | 2008-06-12 | Hitachi Kokusai Electric Inc. | Substrate treatment device |
US20080113097A1 (en) | 2006-11-14 | 2008-05-15 | Maitreyee Mahajani | LOW TEMPERATURE ALD SiO2 |
US20080113096A1 (en) | 2006-11-14 | 2008-05-15 | Maitreyee Mahajani | Method of depositing catalyst assisted silicates of high-k materials |
US20080179104A1 (en) | 2006-11-14 | 2008-07-31 | Smith International, Inc. | Nano-reinforced wc-co for improved properties |
US20080113094A1 (en) | 2006-11-15 | 2008-05-15 | Casper Daniel J | Compositions with Improved Adhesion to Low Surface Energy Substrates |
US20140175054A1 (en) | 2006-11-21 | 2014-06-26 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature cvd systems |
US20090223441A1 (en) | 2006-11-22 | 2009-09-10 | Chantal Arena | High volume delivery system for gallium trichloride |
US20080118334A1 (en) | 2006-11-22 | 2008-05-22 | Bonora Anthony C | Variable pitch storage shelves |
US8128333B2 (en) | 2006-11-27 | 2012-03-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and manufacturing method for semiconductor devices |
US20080121177A1 (en) | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US20080124946A1 (en) | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
US7758698B2 (en) | 2006-11-28 | 2010-07-20 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US20110006402A1 (en) | 2006-11-29 | 2011-01-13 | Micron Technology, Inc. | Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices |
US20080129209A1 (en) | 2006-11-30 | 2008-06-05 | Veeco Instruments, Inc. | Adaptive controller for ion source |
US20080132046A1 (en) | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
US20080178805A1 (en) | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US20080182390A1 (en) | 2006-12-07 | 2008-07-31 | Francesco Lemmi | Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material |
US20080142483A1 (en) | 2006-12-07 | 2008-06-19 | Applied Materials, Inc. | Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills |
US7906174B1 (en) | 2006-12-07 | 2011-03-15 | Novellus Systems, Inc. | PECVD methods for producing ultra low-k dielectric films using UV treatment |
US20080202689A1 (en) | 2006-12-08 | 2008-08-28 | Tes Co., Ltd. | Plasma processing apparatus |
US20080135936A1 (en) | 2006-12-08 | 2008-06-12 | Kazuaki Nakajima | Semiconductor device and manufacturing method thereof |
US20080182075A1 (en) | 2006-12-12 | 2008-07-31 | Saurabh Chopra | Phosphorus Containing Si Epitaxial Layers in N-Type Source/Drain Junctions |
US20080173238A1 (en) | 2006-12-12 | 2008-07-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel |
US20080142046A1 (en) | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
US7378618B1 (en) | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
US20100025766A1 (en) | 2006-12-15 | 2010-02-04 | Nxp, B.V. | Transistor device and method of manufacturing such a transistor device |
USD583395S1 (en) | 2006-12-15 | 2008-12-23 | Tokyo Electron Limited | Cover for a heater stage of a plasma processing apparatus |
US20100230863A1 (en) | 2006-12-19 | 2010-09-16 | Koninklijke Philips Electronics N.V. | System for and method of heating objects in a production line |
US8178436B2 (en) | 2006-12-21 | 2012-05-15 | Intel Corporation | Adhesion and electromigration performance at an interface between a dielectric and metal |
KR20080058620A (en) | 2006-12-22 | 2008-06-26 | 세메스 주식회사 | Plasma chemical vopar deposition equipment for supplying to divided gas nozzles |
US20100018913A1 (en) | 2006-12-27 | 2010-01-28 | Holger Blum | Filter and sterilization apparatus |
US20080157157A1 (en) | 2006-12-27 | 2008-07-03 | Osamu Tonomura | Semiconductor integrated circuit device |
US20080157365A1 (en) | 2006-12-27 | 2008-07-03 | Andrew Ott | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor |
US20100024872A1 (en) | 2006-12-27 | 2010-02-04 | Katsushi Kishimoto | Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus, and semiconductor device manufactured using such method and apparatus |
US20080157212A1 (en) | 2006-12-28 | 2008-07-03 | Lavoie Adrien R | Tunable gate electrode work function material for transistor applications |
US20080156769A1 (en) | 2006-12-29 | 2008-07-03 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
US20080176335A1 (en) | 2006-12-29 | 2008-07-24 | Thermo Fisher Scientific Inc. | Apparatus and method for generating nitrogen oxides |
US20080277656A1 (en) | 2007-01-09 | 2008-11-13 | Sang Hee Park | METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER |
JP2008172083A (en) | 2007-01-12 | 2008-07-24 | Sharp Corp | Vapor growth device and vapor growth method |
US20110089166A1 (en) | 2007-01-15 | 2011-04-21 | Aaron Muir Hunter | Temperature measurement and control of wafer support in thermal processing chamber |
US8196234B2 (en) | 2007-01-16 | 2012-06-12 | Hansgrohe Ag | Shower installation |
US8497213B2 (en) | 2007-01-16 | 2013-07-30 | Hitachi High-Technologies Corporation | Plasma processing method |
US20080173237A1 (en) | 2007-01-19 | 2008-07-24 | Collins Kenneth S | Plasma Immersion Chamber |
US20080176375A1 (en) | 2007-01-19 | 2008-07-24 | Qimonda Ag | Method for forming a dielectric layer |
US7725012B2 (en) | 2007-01-19 | 2010-05-25 | Asm America, Inc. | Movable radiant heat sources |
US20080191193A1 (en) | 2007-01-22 | 2008-08-14 | Xuegeng Li | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
US20080176412A1 (en) | 2007-01-22 | 2008-07-24 | Elpida Memory, Inc. | Atomic layer deposition system including a plurality of exhaust tubes |
US7992318B2 (en) | 2007-01-22 | 2011-08-09 | Tokyo Electron Limited | Heating apparatus, heating method, and computer readable storage medium |
US20080173326A1 (en) | 2007-01-23 | 2008-07-24 | Quancheng Gu | Oxygen plasma clean to remove carbon species deposited on a glass dome surface |
US7993457B1 (en) | 2007-01-23 | 2011-08-09 | Novellus Systems, Inc. | Deposition sub-chamber with variable flow |
US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
US20110283933A1 (en) | 2007-01-24 | 2011-11-24 | Yuri Makarov | METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF SiC AND RELATED OR SIMILAR MATERIAL, BY CHEMICAL VAPOR DEPOSITION, USING PRECURSORS IN MODIFIED COLD-WALL REACTOR |
US20080173240A1 (en) | 2007-01-24 | 2008-07-24 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
US20080178608A1 (en) | 2007-01-26 | 2008-07-31 | Takumi Tandou | Plasma processing apparatus and plasma processing method |
WO2008091900A1 (en) | 2007-01-26 | 2008-07-31 | Applied Materials, Inc. | Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild |
US20080182411A1 (en) | 2007-01-26 | 2008-07-31 | Asm America, Inc. | Plasma-enhanced ald of tantalum nitride films |
US7858898B2 (en) | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
US7661299B2 (en) | 2007-01-30 | 2010-02-16 | Toyota Jidosha Kabushiki Kaisha | Wheel state monitoring system and wheel state detecting apparatus |
US20080179715A1 (en) | 2007-01-30 | 2008-07-31 | Micron Technology, Inc. | Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device |
US20080179291A1 (en) | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Process for wafer backside polymer removal and wafer front side photoresist removal |
US20080257494A1 (en) | 2007-01-31 | 2008-10-23 | Tokyo Electron Limited | Substrate processing apparatus |
US7829460B2 (en) | 2007-01-31 | 2010-11-09 | GlobalFoundries, Inc. | Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride |
US20100111648A1 (en) | 2007-01-31 | 2010-05-06 | Tokyo Electron Limited | Substrate processing apparatus and particle adhesion preventing method |
US8864375B2 (en) | 2007-01-31 | 2014-10-21 | Denso Corporation | Temperature sensor |
CN101681873A (en) | 2007-01-31 | 2010-03-24 | 先进微装置公司 | Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride |
KR20090105977A (en) | 2007-02-06 | 2009-10-07 | 샌트랄 글래스 컴퍼니 리미티드 | Modifier for low dielectric constant film, and method for production thereof |
US20080194169A1 (en) | 2007-02-08 | 2008-08-14 | Applied Materials, Inc. | Susceptor with insulative inserts |
JP2008198629A (en) | 2007-02-08 | 2008-08-28 | Mitsubishi Electric Corp | Surface treatment method and solar cell |
US20080193643A1 (en) | 2007-02-12 | 2008-08-14 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20080194105A1 (en) | 2007-02-14 | 2008-08-14 | Juan Dominguez | Organometallic precursors for seed/barrier processes and methods thereof |
US20080194088A1 (en) | 2007-02-14 | 2008-08-14 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
US20080199977A1 (en) | 2007-02-15 | 2008-08-21 | Air Products And Chemicals, Inc. | Activated Chemical Process for Enhancing Material Properties of Dielectric Films |
USD576001S1 (en) | 2007-02-16 | 2008-09-02 | Brenda Brunderman | Faux brick tool |
US8393091B2 (en) | 2007-02-21 | 2013-03-12 | Fujitsu Semiconductor Limited | Substrate processing method, and method of manufacturing semiconductor device |
JP2008202107A (en) | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | Substrate-treating apparatus |
US20080214003A1 (en) | 2007-02-21 | 2008-09-04 | Bin Xia | Methods for forming a ruthenium-based film on a substrate |
US7871198B2 (en) | 2007-02-26 | 2011-01-18 | Battelle Energy Alliance, Llc | High-temperature thermocouples and related methods |
US20080205483A1 (en) | 2007-02-26 | 2008-08-28 | Rempe Joy L | High temperature thermocouple design and fabrication |
US20120171874A1 (en) | 2007-02-27 | 2012-07-05 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon- Containing Films |
US20080203487A1 (en) | 2007-02-28 | 2008-08-28 | Joerg Hohage | Field effect transistor having an interlayer dielectric material having increased intrinsic stress |
US20080286463A1 (en) | 2007-03-01 | 2008-11-20 | Tiner Robin L | Rf shutter |
US20080216077A1 (en) | 2007-03-02 | 2008-09-04 | Applied Materials, Inc. | Software sequencer for integrated substrate processing system |
US20080216958A1 (en) | 2007-03-07 | 2008-09-11 | Novellus Systems, Inc. | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same |
US20080216742A1 (en) | 2007-03-09 | 2008-09-11 | Yuji Takebayashi | Substrate processing apparatus |
US20080220619A1 (en) | 2007-03-09 | 2008-09-11 | Asm Japan K.K. | Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation |
US20080223130A1 (en) | 2007-03-13 | 2008-09-18 | Provina Incorporated | Method and device for measuring density of a liquid |
US20100195690A1 (en) | 2007-03-16 | 2010-08-05 | Koninklijke Philips Electronics N.V. | Vertical extended cavity surface emission laser and method for manufacturing a light emitting component of the same |
US7621672B2 (en) | 2007-03-19 | 2009-11-24 | Babcock & Wilcox Technical Services Y-12, Llc | Thermocouple shield |
US20080230352A1 (en) | 2007-03-20 | 2008-09-25 | Yasunari Hirata | Conveyer apparatus |
US20080233288A1 (en) | 2007-03-20 | 2008-09-25 | Tokyo Electron Limited | Method of forming crystallographically stabilized doped hafnium zirconium based films |
US20080229811A1 (en) | 2007-03-20 | 2008-09-25 | Kla-Tencor Technologies Corporation | Stabilizing a substrate using a vacuum preload air bearing chuck |
US20080230371A1 (en) | 2007-03-22 | 2008-09-25 | Tokyo Electron Limited | Method and apparatus for extending chamber component life in a substrate processing system |
US20100089870A1 (en) | 2007-03-22 | 2010-04-15 | Mitsuru Hiroshima | Plasma processing apparatus and plasma processing method |
US7763869B2 (en) | 2007-03-23 | 2010-07-27 | Asm Japan K.K. | UV light irradiating apparatus with liquid filter |
KR20070041701A (en) | 2007-03-26 | 2007-04-19 | 노영환 | Defumidifier and air conditioning ventilation system |
US20100119727A1 (en) | 2007-03-27 | 2010-05-13 | Tokyo Electron Limited | Film forming apparatus, film forming method and storage medium |
US20080237572A1 (en) | 2007-03-27 | 2008-10-02 | Chi On Chui | Forming a type i heterostructure in a group iv semiconductor |
US20100101728A1 (en) | 2007-03-29 | 2010-04-29 | Tokyo Electron Limited | Plasma process apparatus |
US20080241387A1 (en) | 2007-03-29 | 2008-10-02 | Asm International N.V. | Atomic layer deposition reactor |
US20080241052A1 (en) | 2007-03-29 | 2008-10-02 | Hooper David M | Apparatus, method and system for delivering oxygen-ozone |
WO2008121463A1 (en) | 2007-03-30 | 2008-10-09 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
US20080242116A1 (en) | 2007-03-30 | 2008-10-02 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
US20080293198A1 (en) | 2007-03-30 | 2008-11-27 | Nec Electronics Corporation | Method for manufacturing semiconductor device including etching process of silicon nitride film |
US7651961B2 (en) | 2007-03-30 | 2010-01-26 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
US20080237604A1 (en) | 2007-03-30 | 2008-10-02 | Husam Niman Alshareef | Plasma nitrided gate oxide, high-k metal gate based cmos device |
US20080264337A1 (en) | 2007-04-02 | 2008-10-30 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US20110275018A1 (en) | 2007-04-02 | 2011-11-10 | Stmicroelectronics S.R.L. | Circuit architecture on an organic base and related manufacturing method |
US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US8242028B1 (en) | 2007-04-03 | 2012-08-14 | Novellus Systems, Inc. | UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement |
US20080248310A1 (en) | 2007-04-04 | 2008-10-09 | Samsung Sdi Co., Ltd. | Carbon nanotube hybrid system using carbide-derived carbon, a method of making the same, an electron emitter comprising the same, and an electron emission device comprising the electron emitter |
US20080246101A1 (en) | 2007-04-05 | 2008-10-09 | Applied Materials Inc. | Method of poly-silicon grain structure formation |
US20080248597A1 (en) | 2007-04-06 | 2008-10-09 | Micron Technology, Inc. | Methods for determining a dose of an impurity implanted in a semiconductor substrate and an apparatus for same |
US20100168404A1 (en) | 2007-04-13 | 2010-07-01 | The Board Of Trustees Of The University Of Illinoi | Metal Complex Compositions and Methods for Making Metal-Containing Films |
US20100126415A1 (en) | 2007-04-16 | 2010-05-27 | Ulvac, Inc. | Conveyor and deposition apparatus, and maintenance method thereof |
US20100180819A1 (en) | 2007-04-17 | 2010-07-22 | Ulvac, Inc. | Film-forming apparatus |
US20080260963A1 (en) | 2007-04-17 | 2008-10-23 | Hyungsuk Alexander Yoon | Apparatus and method for pre and post treatment of atomic layer deposition |
US20080261405A1 (en) | 2007-04-19 | 2008-10-23 | Applied Materials, Inc. | Hydrogen ashing enhanced with water vapor and diluent gas |
USD562357S1 (en) | 2007-04-20 | 2008-02-19 | Alamo Group, Inc. | Disk for rotary mower knives |
US20080257102A1 (en) | 2007-04-20 | 2008-10-23 | William Packer | Mechanically retained motorcycle handlebar grips |
US20090304558A1 (en) | 2007-04-26 | 2009-12-10 | John Madison Patton | Apparatus, system, and method for generating a gas from solid reactant pouches |
US7591601B2 (en) | 2007-04-27 | 2009-09-22 | Tokyo Electron Limited | Coater/developer, coating/developing method, and storage medium |
US7575968B2 (en) | 2007-04-30 | 2009-08-18 | Freescale Semiconductor, Inc. | Inverse slope isolation and dual surface orientation integration |
US7713874B2 (en) | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
US20080272424A1 (en) | 2007-05-03 | 2008-11-06 | Hynix Semiconductor Inc. | Nonvolatile Memory Device Having Fast Erase Speed And Improved Retention Characteristics And Method For Fabricating The Same |
US20110067522A1 (en) | 2007-05-08 | 2011-03-24 | Lai Ching-Chuan | Bicycle handlebar grip |
US20100255196A1 (en) | 2007-05-09 | 2010-10-07 | Leybold Optics Gmbh | Treatment system for flat substrates |
US20080276864A1 (en) | 2007-05-09 | 2008-11-13 | Blake Koelmel | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
US8110099B2 (en) | 2007-05-09 | 2012-02-07 | Contech Stormwater Solutions Inc. | Stormwater filter assembly |
US20080283962A1 (en) | 2007-05-15 | 2008-11-20 | International Business Machines Corporation | Self-aligned and extended inter-well isolation structure |
US20090011608A1 (en) | 2007-05-15 | 2009-01-08 | Renesas Technology Corp. | Manufacturing method of semiconductor device |
CN101308794A (en) | 2007-05-15 | 2008-11-19 | 应用材料股份有限公司 | Atomic layer deposition of tungsten material |
US20080291964A1 (en) | 2007-05-22 | 2008-11-27 | Goodrich Control Systems Limited | Temperature Sensing |
US20080289767A1 (en) | 2007-05-23 | 2008-11-27 | Takumi Tandou | Plasma processing apparatus |
WO2008147731A1 (en) | 2007-05-24 | 2008-12-04 | Asm America, Inc. | Thermocouple |
US20080289574A1 (en) | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Thermocouple |
US7874726B2 (en) | 2007-05-24 | 2011-01-25 | Asm America, Inc. | Thermocouple |
US20080289650A1 (en) | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
US20080295872A1 (en) | 2007-05-30 | 2008-12-04 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US20080299326A1 (en) | 2007-05-30 | 2008-12-04 | Asm Japan K.K. | Plasma cvd apparatus having non-metal susceptor |
US20080298945A1 (en) | 2007-05-31 | 2008-12-04 | Applied Materials, Inc. | Methods and apparatus for extending the reach of a dual scara robot linkage |
US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
US20090017631A1 (en) | 2007-06-01 | 2009-01-15 | Bencher Christopher D | Self-aligned pillar patterning using multiple spacer masks |
US20080299758A1 (en) | 2007-06-04 | 2008-12-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device |
US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
US20090000551A1 (en) | 2007-06-07 | 2009-01-01 | Soo Young Choi | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
US7955650B2 (en) | 2007-06-07 | 2011-06-07 | Asm Japan K.K. | Method for forming dielectric film using porogen gas |
US20080305014A1 (en) | 2007-06-07 | 2008-12-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US20120103264A1 (en) | 2007-06-07 | 2012-05-03 | Soo Young Choi | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
US20080305246A1 (en) | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Apparatus for depositing a uniform silicon film and methods for manufacturing the same |
US20080302303A1 (en) | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
US20100112496A1 (en) | 2007-06-08 | 2010-05-06 | Tokyo Electron Limited | Patterning method |
US20100130015A1 (en) | 2007-06-08 | 2010-05-27 | Tokyo Electron Limited | Patterning method |
JP2009016815A (en) | 2007-06-08 | 2009-01-22 | Tokyo Electron Ltd | Formation method of fine pattern |
US20110237082A1 (en) | 2007-06-08 | 2011-09-29 | Tokyo Electron Limited | Micro pattern forming method |
US20080303744A1 (en) | 2007-06-11 | 2008-12-11 | Tokyo Electron Limited | Plasma processing system, antenna, and use of plasma processing system |
US20080305443A1 (en) | 2007-06-11 | 2008-12-11 | Hiroko Nakamura | Pattern forming method using relacs process |
US20090042344A1 (en) | 2007-06-15 | 2009-02-12 | Amberwave Systems Corporation | InP-Based Transistor Fabrication |
US20080314319A1 (en) | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
USD575713S1 (en) | 2007-06-21 | 2008-08-26 | Ratcliffe Peter W | Vehicle accessory |
US20080317972A1 (en) | 2007-06-21 | 2008-12-25 | Asm International N.V. | Method for depositing thin films by mixed pulsed cvd and ald |
US20080315292A1 (en) | 2007-06-22 | 2008-12-25 | Semiconductor Manufacturing International (Shanghai) Corporation | Atomic Layer Deposition Method and Semiconductor Device Formed by the Same |
US8158512B2 (en) | 2007-06-22 | 2012-04-17 | Semiconductor Manufacturing International (Shanghai) Corporation | Atomic layer deposition method and semiconductor device formed by the same |
US20080314892A1 (en) | 2007-06-25 | 2008-12-25 | Graham Robert G | Radiant shield |
US20090000769A1 (en) | 2007-06-27 | 2009-01-01 | Chun-Hsien Lin | Temperature Controlled Loadlock Chamber |
US20090004875A1 (en) | 2007-06-27 | 2009-01-01 | Meihua Shen | Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate |
US9337054B2 (en) | 2007-06-28 | 2016-05-10 | Entegris, Inc. | Precursors for silicon dioxide gap fill |
US20090000550A1 (en) | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Manifold assembly |
TW200903625A (en) | 2007-07-04 | 2009-01-16 | Advanced Micro Fab Equip Inc | Multi-station decoupled reactive ion etch chamber |
US20090033907A1 (en) | 2007-07-05 | 2009-02-05 | Nikon Corporation | Devices and methods for decreasing residual chucking forces |
US8378464B2 (en) | 2007-07-06 | 2013-02-19 | Tokyo Electron Limited | Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium |
US20090093080A1 (en) | 2007-07-10 | 2009-04-09 | Soo Young Choi | Solar cells and methods and apparatuses for forming the same including i-layer and n-layer chamber cleaning |
US20110300720A1 (en) | 2007-07-11 | 2011-12-08 | Applied Materials, Inc. | Plasma treatment of substrates prior to deposition |
US20090017227A1 (en) | 2007-07-11 | 2009-01-15 | Applied Materials, Inc. | Remote Plasma Source for Pre-Treatment of Substrates Prior to Deposition |
US20100206767A1 (en) | 2007-07-11 | 2010-08-19 | Shin-Etsu Polymer Co., Ltd. | Lid body for substrate storage container and substrate storage container |
US20090014879A1 (en) | 2007-07-12 | 2009-01-15 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
US7651269B2 (en) | 2007-07-19 | 2010-01-26 | Lam Research Corporation | Temperature probes having a thermally isolated tip |
US20090023229A1 (en) | 2007-07-19 | 2009-01-22 | Asm Japan K.K. | Method for managing uv irradiation for curing semiconductor substrate |
US7501292B2 (en) | 2007-07-19 | 2009-03-10 | Asm Japan K.K. | Method for managing UV irradiation for curing semiconductor substrate |
US20090020072A1 (en) | 2007-07-20 | 2009-01-22 | Tokyo Electron Limited | Chemical solution vaporizing tank and chemical solution treating system |
US20090029528A1 (en) | 2007-07-26 | 2009-01-29 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US7720560B2 (en) | 2007-07-26 | 2010-05-18 | International Business Machines Corporation | Semiconductor manufacturing process monitoring |
US20090029503A1 (en) | 2007-07-27 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
USD596476S1 (en) | 2007-07-27 | 2009-07-21 | Daniel P. Welch | Handle bar grip |
US20090289300A1 (en) | 2007-07-27 | 2009-11-26 | Yuichiro Sasaki | Semiconductor device and method for producing the same |
US20090035927A1 (en) | 2007-07-30 | 2009-02-05 | Applied Materials, Inc. | Method of forming dielectric layers on a substrate and apparatus therefor |
US20090035584A1 (en) | 2007-07-30 | 2009-02-05 | Micron Technology, Inc. | Methods for device fabrication using pitch reduction and associated structures |
US20090035946A1 (en) | 2007-07-31 | 2009-02-05 | Asm International N.V. | In situ deposition of different metal-containing films using cyclopentadienyl metal precursors |
US20090036292A1 (en) | 2007-08-02 | 2009-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US20090035463A1 (en) | 2007-08-03 | 2009-02-05 | Tokyo Electron Limited | Thermal processing system and method for forming an oxide layer on substrates |
US20100129990A1 (en) | 2007-08-03 | 2010-05-27 | Shin-Etsu Handotai Co. Ltd | Susceptor and method for manufacturing silicon epitaxial wafer |
US20090041952A1 (en) | 2007-08-10 | 2009-02-12 | Asm Genitech Korea Ltd. | Method of depositing silicon oxide films |
US20090041984A1 (en) | 2007-08-10 | 2009-02-12 | Nano Terra Inc. | Structured Smudge-Resistant Coatings and Methods of Making and Using the Same |
US20090042408A1 (en) | 2007-08-10 | 2009-02-12 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method and substrate processing apparatus |
US20090047433A1 (en) | 2007-08-13 | 2009-02-19 | Chun-Sik Kim | Substrate processing apparatus and method |
US8443484B2 (en) | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US20120003726A1 (en) | 2007-08-15 | 2012-01-05 | Enigma Diagnostics Limited | Apparatus and method for calibration of non-contact thermal sensors |
US8703002B2 (en) | 2007-08-17 | 2014-04-22 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US20090047426A1 (en) | 2007-08-17 | 2009-02-19 | Asm Genitech Korea Ltd. | Deposition apparatus |
US20090052498A1 (en) | 2007-08-24 | 2009-02-26 | Asm America, Inc. | Thermocouple |
US8084372B2 (en) | 2007-08-24 | 2011-12-27 | Tokyo Electron Limited | Substrate processing method and computer storage medium |
WO2009029532A2 (en) | 2007-08-24 | 2009-03-05 | Asm America, Inc. | Thermocouple |
US20090061647A1 (en) | 2007-08-27 | 2009-03-05 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp ii process |
US20100252434A1 (en) | 2007-08-28 | 2010-10-07 | University Of Florida Research Foundation, Inc. | Bio-Sensor Using Gated Electrokinetic Transport |
WO2009028619A1 (en) | 2007-08-30 | 2009-03-05 | Tokyo Electron Limited | Treating-gas supply system and treating apparatus |
US20110139272A1 (en) | 2007-08-30 | 2011-06-16 | Tokyo Electron Limited | Process-gas supply and processing system |
US20140057454A1 (en) | 2007-08-31 | 2014-02-27 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
US20090056112A1 (en) | 2007-09-03 | 2009-03-05 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck member, method of manufacturing the same, and electrostatic chuck device |
US20090060480A1 (en) | 2007-09-04 | 2009-03-05 | Sokudo Co., Ltd. | Method and system for controlling bake plate temperature in a semiconductor processing chamber |
US20090061083A1 (en) | 2007-09-05 | 2009-03-05 | Chiang Tony P | Vapor based combinatorial processing |
US8440259B2 (en) | 2007-09-05 | 2013-05-14 | Intermolecular, Inc. | Vapor based combinatorial processing |
US20090056629A1 (en) | 2007-09-05 | 2009-03-05 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
US20090057269A1 (en) | 2007-09-05 | 2009-03-05 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
US20090061644A1 (en) | 2007-09-05 | 2009-03-05 | Chiang Tony P | Vapor based combinatorial processing |
US20100255625A1 (en) | 2007-09-07 | 2010-10-07 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
USD614267S1 (en) | 2007-09-10 | 2010-04-20 | Silvano Breda | Circular shower strainer |
US20100279008A1 (en) | 2007-09-12 | 2010-11-04 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
US8506713B2 (en) | 2007-09-12 | 2013-08-13 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
US20090075491A1 (en) | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
US8055378B2 (en) | 2007-09-18 | 2011-11-08 | Tokyo Electron Limited | Device for controlling processing system, method for controlling processing system and computer-readable storage medium stored processing program |
WO2009039251A1 (en) | 2007-09-18 | 2009-03-26 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon-containing films |
US20090075490A1 (en) | 2007-09-18 | 2009-03-19 | L'air Liquite Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon-containing films |
US20120122319A1 (en) | 2007-09-19 | 2012-05-17 | Hironobu Shimizu | Coating method for coating reaction tube prior to film forming process |
US20090081879A1 (en) | 2007-09-20 | 2009-03-26 | Elpida Memory, Inc. | Method for manufacturing semiconductor device |
US20090080136A1 (en) | 2007-09-26 | 2009-03-26 | Tokyo Electron Limited | Electrostatic chuck member |
US8404044B2 (en) | 2007-09-27 | 2013-03-26 | Nuflare Technology, Inc. | Epitaxial growth film formation method |
US20090087585A1 (en) | 2007-09-28 | 2009-04-02 | Wei Ti Lee | Deposition processes for titanium nitride barrier and aluminum |
US20090084317A1 (en) | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
JP2009099938A (en) | 2007-09-28 | 2009-05-07 | Tokyo Electron Ltd | Method and apparatus for manufacturing semiconductor device, control program, and program recording medium |
US20090085156A1 (en) | 2007-09-28 | 2009-04-02 | Gilbert Dewey | Metal surface treatments for uniformly growing dielectric layers |
JP2009088421A (en) | 2007-10-03 | 2009-04-23 | Renesas Technology Corp | Semiconductor device manufacturing method |
US8041450B2 (en) | 2007-10-04 | 2011-10-18 | Asm Japan K.K. | Position sensor system for substrate transfer robot |
US20090093094A1 (en) | 2007-10-05 | 2009-04-09 | Zhiyuan Ye | Selective Formation of Silicon Carbon Epitaxial Layer |
US20090090382A1 (en) | 2007-10-05 | 2009-04-09 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US20090093100A1 (en) | 2007-10-09 | 2009-04-09 | Li-Qun Xia | Method for forming an air gap in multilevel interconnect structure |
US20120111271A1 (en) | 2007-10-11 | 2012-05-10 | Begarney Michael J | Chemical vapor deposition reactor |
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US20100258809A1 (en) | 2007-10-18 | 2010-10-14 | Nxp B.V. | Method of manufacturing localized semiconductor-on-insulator (soi) structures in a bulk semidonductor wafer |
KR20090039936A (en) | 2007-10-19 | 2009-04-23 | 주성엔지니어링(주) | Substrate etching apparatus using remote plasma, and substrate etching method using the same |
US20090116936A1 (en) | 2007-10-22 | 2009-05-07 | Hitachi-Kokusai Electric Inc. | Substrate processing apparatus |
US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
US20090104789A1 (en) | 2007-10-22 | 2009-04-23 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US8242031B2 (en) | 2007-10-22 | 2012-08-14 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US7939447B2 (en) | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
US7981751B2 (en) | 2007-10-26 | 2011-07-19 | International Business Machines Corporation | Structure and method for fabricating self-aligned metal contacts |
US20090112458A1 (en) | 2007-10-30 | 2009-04-30 | Denso Corporation | Navigation system and method for navigating route to destination |
US20100282645A1 (en) | 2007-10-31 | 2010-11-11 | China Petroleum & Chemical Corporation | Pre-passivation process for a continuous reforming apparatus, and passivation process for a continuous reforming apparatus during the initial reacation |
US20090108308A1 (en) | 2007-10-31 | 2009-04-30 | Jusung Engineering Co., Ltd | Transistor and method of fabricating the same |
US20090115064A1 (en) | 2007-11-01 | 2009-05-07 | Micron Technology, Inc. | Spacer process for on pitch contacts and related structures |
US20090117746A1 (en) | 2007-11-02 | 2009-05-07 | Tokyo Electron Limited | Gas supply device, substrate processing apparatus and substrate processing method |
US20090117717A1 (en) | 2007-11-05 | 2009-05-07 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
US20090117723A1 (en) | 2007-11-07 | 2009-05-07 | Samsung Electronics Co., Ltd. | Methods of forming a conductive pattern in semiconductor devices and methods of manufacturing semiconductor devices having a conductive pattern |
US20090124131A1 (en) | 2007-11-09 | 2009-05-14 | Electronic Controls Design | Thermocouple adapter |
US20100279512A1 (en) | 2007-11-14 | 2010-11-04 | Tokyo Electron Limited | Plasma processing apparatus and method for plasma-processing semiconductor substrate |
US20090122458A1 (en) | 2007-11-14 | 2009-05-14 | Varian Semiconductor Epuipment Associated, Inc. | Embossed electrostatic chuck |
USD614268S1 (en) | 2007-11-19 | 2010-04-20 | Silvano Breda | Shower strainer |
US8272516B2 (en) | 2007-11-19 | 2012-09-25 | Caterpillar Inc. | Fluid filter system |
USD602575S1 (en) | 2007-11-19 | 2009-10-20 | Silvano Breda | Shower strainer |
US20110294288A1 (en) | 2007-11-26 | 2011-12-01 | Jeong-Ho Lee | Method of fabricating metal interconnection and method of fabricating image sensor using the same |
US7858519B2 (en) | 2007-11-27 | 2010-12-28 | Imec | Integrated circuit and manufacturing method of copper germanide and copper silicide as copper capping layer |
US20090136683A1 (en) | 2007-11-27 | 2009-05-28 | Asm Japan K.K. | Method of plasma treatment using amplitude-modulated rf power |
US20090136665A1 (en) | 2007-11-27 | 2009-05-28 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
KR20090055443A (en) | 2007-11-28 | 2009-06-02 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
US20100244688A1 (en) | 2007-11-28 | 2010-09-30 | Koninklijke Philips Electronics N.V. | Dielectric barrier discharge lamp |
US20090142933A1 (en) | 2007-11-29 | 2009-06-04 | Masayoshi Yajima | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
KR20090056475A (en) | 2007-11-30 | 2009-06-03 | 삼성전자주식회사 | Plasma processing apparatus |
US8060252B2 (en) | 2007-11-30 | 2011-11-15 | Novellus Systems, Inc. | High throughput method of in transit wafer position correction in system using multiple robots |
US20090142935A1 (en) | 2007-12-03 | 2009-06-04 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
US20090142905A1 (en) | 2007-12-03 | 2009-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
US20090139657A1 (en) | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
US20100282170A1 (en) | 2007-12-06 | 2010-11-11 | Tsuyoshi Nishizawa | Vapor phase growth susceptor and vapor phase growth apparatus |
US20090146322A1 (en) | 2007-12-07 | 2009-06-11 | Milind Weling | Method of eliminating a lithography operation |
US7807566B2 (en) | 2007-12-07 | 2010-10-05 | Asm Japan K.K. | Method for forming dielectric SiOCH film having chemical stability |
US20090147819A1 (en) | 2007-12-07 | 2009-06-11 | Asm America, Inc. | Calibration of temperature control system for semiconductor processing chamber |
US8349083B2 (en) | 2007-12-11 | 2013-01-08 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
US20120024227A1 (en) | 2007-12-11 | 2012-02-02 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
US20090155025A1 (en) * | 2007-12-12 | 2009-06-18 | Applied Materials, Inc. | Lift pin for substrate processing |
US20090156017A1 (en) | 2007-12-13 | 2009-06-18 | Asm Japan K.K. | Method for forming dielectric film using siloxane-silazane mixture |
US8003174B2 (en) | 2007-12-13 | 2011-08-23 | Asm Japan K.K. | Method for forming dielectric film using siloxane-silazane mixture |
DE102008052750A1 (en) | 2007-12-13 | 2009-06-18 | Samsung Electro - Mechanics Co., Ltd., Suwon-shi | Device for metal organic chemical vapor deposition, comprises reactor with upper- and lower cover, wafer-applying unit with susceptors, heating unit, rotary drive unit, gas supply unit with gas supply connections, and gas output unit |
US20100259152A1 (en) | 2007-12-17 | 2010-10-14 | Orc Manufacturing Co., Ltd. | Discharge lamp |
US20110003087A1 (en) | 2007-12-17 | 2011-01-06 | Beneq Oy | Method and apparatus for generating plasma |
US20090155488A1 (en) | 2007-12-18 | 2009-06-18 | Asm Japan K.K. | Shower plate electrode for plasma cvd reactor |
US8092606B2 (en) | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
US20090156015A1 (en) | 2007-12-18 | 2009-06-18 | Asm Genitech Korea Ltd. | Deposition apparatus |
US7998875B2 (en) | 2007-12-19 | 2011-08-16 | Lam Research Corporation | Vapor phase repair and pore sealing of low-K dielectric materials |
US20090159002A1 (en) | 2007-12-19 | 2009-06-25 | Kallol Bera | Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution |
US20090159424A1 (en) | 2007-12-19 | 2009-06-25 | Wei Liu | Dual zone gas injection nozzle |
US20090159000A1 (en) | 2007-12-20 | 2009-06-25 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
US20090162647A1 (en) | 2007-12-21 | 2009-06-25 | Applied Materials, Inc. | Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components |
US20090209081A1 (en) | 2007-12-21 | 2009-08-20 | Asm International N.V. | Silicon Dioxide Thin Films by ALD |
US7678715B2 (en) | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
US8282847B2 (en) | 2007-12-21 | 2012-10-09 | Lam Research Corporation | Photoresist double patterning |
US20090162996A1 (en) | 2007-12-21 | 2009-06-25 | Kartik Ramaswamy | Removal of surface dopants from a substrate |
US20090197015A1 (en) | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US20090166616A1 (en) | 2007-12-26 | 2009-07-02 | Hitachi, Ltd. | Oxide semiconductor device and surface treatment method of oxide semiconductor |
US20090165722A1 (en) | 2007-12-26 | 2009-07-02 | Jusung Engineering Co., Ltd | Apparatus for treating substrate |
KR100936694B1 (en) | 2007-12-27 | 2010-01-13 | 주식회사 케이씨텍 | Atomic layer deposition apparatus having palasma generating portion |
US8860955B2 (en) | 2007-12-27 | 2014-10-14 | Lam Research Corporation | Arrangements and methods for determining positions and offsets |
US8333839B2 (en) | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
US20120055401A1 (en) | 2007-12-27 | 2012-03-08 | Tokyo Electron Limited | Substrate processing method and system |
US20090165721A1 (en) | 2007-12-27 | 2009-07-02 | Memc Electronic Materials, Inc. | Susceptor with Support Bosses |
US20090165715A1 (en) | 2007-12-27 | 2009-07-02 | Oh Jae-Eung | Vapor deposition reactor |
US8496377B2 (en) | 2007-12-31 | 2013-07-30 | Covidien Lp | Thermometer having molded probe component |
US20100285319A1 (en) | 2008-01-07 | 2010-11-11 | Soonjong Kwak | Method for fabrication of transparent gas barrier film using plasma surface treatment and transparent gas barrier film fabricated thereby |
US7935940B1 (en) | 2008-01-08 | 2011-05-03 | Novellus Systems, Inc. | Measuring in-situ UV intensity in UV cure tool |
US20090176018A1 (en) | 2008-01-09 | 2009-07-09 | Min Zou | Nano/micro-textured surfaces and methods of making same by aluminum-induced crystallization of amorphous silicon |
US20090179365A1 (en) | 2008-01-15 | 2009-07-16 | Lerner Alexander N | High temperature vacuum chuck assembly |
US20110049100A1 (en) | 2008-01-16 | 2011-03-03 | Charm Engineering Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
US20090186479A1 (en) | 2008-01-18 | 2009-07-23 | Tokyo Electron Limited | Semiconductor processing system including vaporizer and method for using same |
US20090186571A1 (en) | 2008-01-22 | 2009-07-23 | Asm America, Inc. | Air ventilation system |
WO2009099776A1 (en) | 2008-01-31 | 2009-08-13 | Applied Materials, Inc. | Closed loop mocvd deposition control |
US20110308453A1 (en) | 2008-01-31 | 2011-12-22 | Applied Materials, Inc. | Closed loop mocvd deposition control |
US20090197411A1 (en) | 2008-02-01 | 2009-08-06 | Christian Dussarrat | New metal precursors containing beta-diketiminato ligands |
US8324699B2 (en) | 2008-02-08 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110159673A1 (en) | 2008-02-08 | 2011-06-30 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
KR20090086790A (en) | 2008-02-11 | 2009-08-14 | (주)소슬 | Apparatus for supporting substrate and apparatus for treating substrate having the same |
US20090200494A1 (en) | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
US7799706B2 (en) | 2008-02-11 | 2010-09-21 | Sungkyunkwan University Foundation For Corporate Collaboration | Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same |
US20110107512A1 (en) | 2008-02-12 | 2011-05-12 | Patrick Gilbert | Heat exchange devices |
US20100326358A1 (en) | 2008-02-12 | 2010-12-30 | Kyu-Jeong Choi | Batch type atomic layer deposition apparatus |
US20090200547A1 (en) | 2008-02-13 | 2009-08-13 | Icemos Technology Ltd. | Trench depth monitor for semiconductor manufacturing |
US20090206056A1 (en) | 2008-02-14 | 2009-08-20 | Songlin Xu | Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers |
JP2009194248A (en) | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | Pattern forming method, semiconductor manufacturing apparatus and storage medium |
US8945306B2 (en) | 2008-02-20 | 2015-02-03 | Tokyo Electron Limited | Gas supply device |
US20090211525A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
US9263298B2 (en) | 2008-02-27 | 2016-02-16 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
US20120012556A1 (en) | 2008-02-27 | 2012-01-19 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
US20090221149A1 (en) | 2008-02-28 | 2009-09-03 | Hammond Iv Edward P | Multiple port gas injection system utilized in a semiconductor processing system |
US20090217871A1 (en) | 2008-02-28 | 2009-09-03 | Asm Genitech Korea Ltd. | Thin film deposition apparatus and method of maintaining the same |
US20090221151A1 (en) | 2008-02-29 | 2009-09-03 | Tokyo Electron Limited | Electrode for plasma processing apparatus, plasma processing apparatus, plasma processing method and storage medium |
US20110000619A1 (en) | 2008-02-29 | 2011-01-06 | Allied Techfinders Co., Ltd | Rotational antenna and semiconductor device including the same |
US20090302002A1 (en) | 2008-02-29 | 2009-12-10 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
US20090227094A1 (en) | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Use of chained implants in solar cells |
US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
US7858533B2 (en) | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
USD585968S1 (en) | 2008-03-06 | 2009-02-03 | West Coast Washers, Inc. | Pipe flashing |
US20110081519A1 (en) | 2008-03-07 | 2011-04-07 | Nederlandse Organisatie Voor Toegepast-Natuurweten | Process for adjusting the coefficient of friction and/or adhesion between surfaces of two solid objects |
US20090230211A1 (en) | 2008-03-12 | 2009-09-17 | Fujifilm Corporation | Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device |
US20110005684A1 (en) | 2008-03-14 | 2011-01-13 | Toshihiro Hayami | Plasma processing apparatus |
US20090236014A1 (en) | 2008-03-20 | 2009-09-24 | Tecvac Limited | Treatment of metal components |
US20090236315A1 (en) | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Shielded lid heater assembly |
US20090236276A1 (en) | 2008-03-21 | 2009-09-24 | Pentair Filtration, Inc. | Modular Drinking Water Filtration System with Adapter Rings for Replaceable Cartridges to Assure Proper Fit |
US9472432B1 (en) | 2008-03-24 | 2016-10-18 | Novellus Systems, Inc. | Dedicated hot and cold end effectors for improved throughput |
US8430620B1 (en) | 2008-03-24 | 2013-04-30 | Novellus Systems, Inc. | Dedicated hot and cold end effectors for improved throughput |
US20110042200A1 (en) | 2008-03-25 | 2011-02-24 | Anthony Wilby | Method of depositing amorphus aluminium oxynitride layer by reactive sputtering of an aluminium target in a nitrogen/oxygen atmosphere |
JP2009239082A (en) | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | Gas feeding device, treating device, and treating method |
US20110098841A1 (en) | 2008-03-27 | 2011-04-28 | Tokyo Electron Limited | Gas supply device, processing apparatus, processing method, and storage medium |
US8252114B2 (en) | 2008-03-28 | 2012-08-28 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
US7816278B2 (en) | 2008-03-28 | 2010-10-19 | Tokyo Electron Limited | In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition |
US20090246374A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
US20090246399A1 (en) | 2008-03-28 | 2009-10-01 | Asm Japan K.K. | Method for activating reactive oxygen species for cleaning carbon-based film deposition |
US20090246971A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition |
US20100078601A1 (en) | 2008-03-31 | 2010-04-01 | American Air Liquide, Inc. | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films |
USD590933S1 (en) | 2008-03-31 | 2009-04-21 | Mcp Industries, Inc. | Vent cap device |
US20090242957A1 (en) | 2008-03-31 | 2009-10-01 | Yi Ma | Atomic layer deposition processes for non-volatile memory devices |
JP2009252851A (en) | 2008-04-02 | 2009-10-29 | Nikon Corp | Exposure apparatus, and device manufacturing method |
US7963736B2 (en) | 2008-04-03 | 2011-06-21 | Asm Japan K.K. | Wafer processing apparatus with wafer alignment device |
JP2009251216A (en) | 2008-04-04 | 2009-10-29 | Shin Etsu Chem Co Ltd | Double patterning process |
US20110027725A1 (en) | 2008-04-04 | 2011-02-03 | Kiyoharu Tsutsumi | Polyol compound for photoresist |
US20090250955A1 (en) | 2008-04-07 | 2009-10-08 | Applied Materials, Inc. | Wafer transfer blade |
US20090256127A1 (en) | 2008-04-15 | 2009-10-15 | American Air Liquide, Inc. | Compounds for Depositing Tellurium-Containing Films |
US20090315093A1 (en) | 2008-04-16 | 2009-12-24 | Asm America, Inc. | Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds |
US20090261331A1 (en) | 2008-04-17 | 2009-10-22 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
US8253204B2 (en) | 2008-04-18 | 2012-08-28 | Hynix Semiconductor Inc. | Semiconductor device with strained channel and method of fabricating the same |
US8741062B2 (en) | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
US20110014359A1 (en) | 2008-04-23 | 2011-01-20 | Imran Hashim | Yttrium and Titanium High-K Dielectric Film |
US20090269506A1 (en) | 2008-04-24 | 2009-10-29 | Seiji Okura | Method and apparatus for cleaning of a CVD reactor |
US20090267225A1 (en) | 2008-04-25 | 2009-10-29 | Shingo Eguchi | Semiconductor device and method for manufacturing the same |
US20090269941A1 (en) | 2008-04-25 | 2009-10-29 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
US20090267135A1 (en) | 2008-04-28 | 2009-10-29 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage device and method of manufacturing the same |
US20110046314A1 (en) | 2008-04-28 | 2011-02-24 | Basf Se | Low-k dielectrics obtainable by twin polymerization |
US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
US20090275210A1 (en) | 2008-05-02 | 2009-11-05 | Sunil Shanker | Combinatorial plasma enhanced deposition techniques |
US20130042811A1 (en) | 2008-05-02 | 2013-02-21 | Intermolecular, Inc. | Combinatorial Plasma Enhanced Deposition Techniques |
US20090275205A1 (en) | 2008-05-02 | 2009-11-05 | Micron Technology, Inc. | Methods of removing silicon oxide and gaseous mixtures for achieving same |
US7632549B2 (en) | 2008-05-05 | 2009-12-15 | Asm Japan K.K. | Method of forming a high transparent carbon film |
US20090280248A1 (en) | 2008-05-06 | 2009-11-12 | Asm America, Inc. | Porous substrate holder with thinned portions |
US20110108424A1 (en) | 2008-05-06 | 2011-05-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Device for separating biomolecules from a fluid |
US20090277874A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
US8076237B2 (en) | 2008-05-09 | 2011-12-13 | Asm America, Inc. | Method and apparatus for 3D interconnect |
US20090286400A1 (en) | 2008-05-13 | 2009-11-19 | Lam Research Corporation | Plasma process with photoresist mask pretreatment |
US20090286402A1 (en) | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
US20090284156A1 (en) | 2008-05-14 | 2009-11-19 | Applied Materials, Inc. | Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery |
US20090283217A1 (en) | 2008-05-15 | 2009-11-19 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
US10395963B2 (en) | 2008-05-19 | 2019-08-27 | Entegris, Inc. | Electrostatic chuck |
US7514058B1 (en) | 2008-05-22 | 2009-04-07 | The Lata Group, Inc. | Apparatus for on-site production of nitrate ions |
US20090297710A1 (en) | 2008-05-27 | 2009-12-03 | Picosun Oy | Methods and apparatus for deposition reactors |
US20090297696A1 (en) | 2008-05-29 | 2009-12-03 | Viljami Pore | Methods for forming conductive titanium oxide thin films |
US20090324989A1 (en) | 2008-05-29 | 2009-12-31 | Gregoire Etienne Witz | Multilayer thermal barrier coating |
US20090297731A1 (en) | 2008-05-30 | 2009-12-03 | Asm Japan K.K. | Apparatus and method for improving production throughput in cvd chamber |
US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
US20090298257A1 (en) | 2008-05-30 | 2009-12-03 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
US20100304047A1 (en) | 2008-06-02 | 2010-12-02 | Air Products And Chemicals, Inc. | Low Temperature Deposition of Silicon-Containing Films |
US20110056513A1 (en) | 2008-06-05 | 2011-03-10 | Axel Hombach | Method for treating surfaces, lamp for said method, and irradiation system having said lamp |
US20090302434A1 (en) | 2008-06-05 | 2009-12-10 | American Air Liquide, Inc. | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films |
US7884918B2 (en) | 2008-06-09 | 2011-02-08 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing device |
US7915667B2 (en) | 2008-06-11 | 2011-03-29 | Qimonda Ag | Integrated circuits having a contact region and methods for manufacturing the same |
US20110121736A1 (en) | 2008-06-11 | 2011-05-26 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20090308315A1 (en) | 2008-06-13 | 2009-12-17 | Asm International N.V. | Semiconductor processing apparatus with improved thermal characteristics and method for providing the same |
US20090308425A1 (en) | 2008-06-17 | 2009-12-17 | Asm America, Inc. | Thermocouple |
WO2009154896A1 (en) | 2008-06-17 | 2009-12-23 | Asm America, Inc. | Thermocouple |
US7946762B2 (en) | 2008-06-17 | 2011-05-24 | Asm America, Inc. | Thermocouple |
US20090314309A1 (en) | 2008-06-19 | 2009-12-24 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
CN101609858A (en) | 2008-06-20 | 2009-12-23 | 福建钧石能源有限公司 | Membrane deposition method |
WO2009154889A2 (en) | 2008-06-20 | 2009-12-23 | Applied Materials, Inc. | Gas distribution showerhead skirt |
US20090317214A1 (en) | 2008-06-23 | 2009-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Novel wafer's ambiance control |
US8726837B2 (en) | 2008-06-23 | 2014-05-20 | Applied Materials, Inc. | Semiconductor process chamber vision and monitoring system |
US20090314208A1 (en) | 2008-06-24 | 2009-12-24 | Applied Materials, Inc. | Pedestal heater for low temperature pecvd application |
US20090325391A1 (en) | 2008-06-30 | 2009-12-31 | Asm International Nv | Ozone and teos process for silicon oxide deposition |
US20090325469A1 (en) | 2008-06-30 | 2009-12-31 | Semes Co., Ltd. | Substrate supporting unit and single type substrate polishing apparatus using the same |
US20100003406A1 (en) | 2008-07-03 | 2010-01-07 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
US8291857B2 (en) | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
US20100006031A1 (en) | 2008-07-08 | 2010-01-14 | Jusung Engineering Co., Ltd. | Gas distribution plate and substrate treating apparatus including the same |
US20100006923A1 (en) | 2008-07-08 | 2010-01-14 | Ryota Fujitsuka | Semiconductor device and method for manufacturing the same |
US20110114261A1 (en) | 2008-07-09 | 2011-05-19 | Tokyo Electron Limited | Plasma processing apparatus |
US20100008656A1 (en) | 2008-07-11 | 2010-01-14 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
US20100012036A1 (en) | 2008-07-11 | 2010-01-21 | Hugo Silva | Isolation for multi-single-wafer processing apparatus |
US20100015813A1 (en) | 2008-07-17 | 2010-01-21 | Micron Technology, Inc. | Gap processing |
US20100032587A1 (en) | 2008-07-17 | 2010-02-11 | Hosch Jimmy W | Electron beam exciter for use in chemical analysis in processing systems |
USD614593S1 (en) | 2008-07-21 | 2010-04-27 | Asm Genitech Korea Ltd | Substrate support for a semiconductor deposition apparatus |
USD609652S1 (en) | 2008-07-22 | 2010-02-09 | Tokyo Electron Limited | Wafer attracting plate |
US20100025796A1 (en) | 2008-08-04 | 2010-02-04 | Amir Massoud Dabiran | Microchannel plate photocathode |
US20100024727A1 (en) | 2008-08-04 | 2010-02-04 | Samsung Electro-Mechanics Co., Ltd | Showerhead and chemical vapor deposition apparatus including the same |
KR20100015073A (en) | 2008-08-04 | 2010-02-12 | 한국과학기술원 | Method for manufacturing thin film transistors based on titanium oxides as active layer and thin film transistors thereof |
US8047711B2 (en) | 2008-08-06 | 2011-11-01 | Heinz Ploechinger | Thermocouple vacuum gauge |
US20100034719A1 (en) | 2008-08-06 | 2010-02-11 | Christian Dussarrat | Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition |
USD600223S1 (en) | 2008-08-07 | 2009-09-15 | Ravinder Aggarwal | Susceptor ring |
US20100032842A1 (en) | 2008-08-07 | 2010-02-11 | Texas Instruments Incorporated | MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS |
US20100031884A1 (en) | 2008-08-07 | 2010-02-11 | Asm America, Inc. | Susceptor ring |
US20110220874A1 (en) | 2008-08-08 | 2011-09-15 | Tobias Hanrath | Inorganic Bulk Multijunction Materials and Processes for Preparing the Same |
US20100041243A1 (en) | 2008-08-12 | 2010-02-18 | Air Products And Chemicals, Inc. | Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same |
US20100040441A1 (en) | 2008-08-13 | 2010-02-18 | Tokyo Electron Limited | Foup opening/closing device and probe apparatus |
KR20100020834A (en) | 2008-08-13 | 2010-02-23 | 주식회사 동부하이텍 | Back metal process chamber |
US8267633B2 (en) | 2008-08-13 | 2012-09-18 | Tokyo Electron Limited | FOUP opening/closing device and probe apparatus |
US8470718B2 (en) | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
US20100041179A1 (en) | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Forming Substrate Structure by Filling Recesses with Deposition Material |
JP2010067940A (en) | 2008-08-13 | 2010-03-25 | Tokyo Electron Ltd | Foup opening/closing device and probe apparatus |
US20100038687A1 (en) | 2008-08-14 | 2010-02-18 | Jason Klaus | Selective deposition of amorphous silicon films on metal gates |
US8484846B2 (en) | 2008-08-15 | 2013-07-16 | Lam Research Corporation | Method of joining components for a composite showerhead electrode assembly for a plasma processing apparatus |
JP2009010412A (en) | 2008-08-25 | 2009-01-15 | Japan Science & Technology Agency | Chemical vapor deposition method |
US20100051597A1 (en) | 2008-08-27 | 2010-03-04 | Shinya Morita | Substrate processing apparatus and method of manufacturing semiconductor device |
US8529701B2 (en) | 2008-08-28 | 2013-09-10 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US8084104B2 (en) | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
US20100055318A1 (en) | 2008-08-29 | 2010-03-04 | Veeco Instruments Inc. | Wafer carrier with varying thermal resistance |
US20100055442A1 (en) | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
US20100055312A1 (en) | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium |
US20100050943A1 (en) | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus and substrate processing apparatus |
US20100055316A1 (en) | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium |
US20100055898A1 (en) | 2008-09-04 | 2010-03-04 | Shuo-Che Chang | Method for fabricating an integrated circuit |
US9267204B2 (en) | 2008-09-04 | 2016-02-23 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium |
US20110159200A1 (en) | 2008-09-08 | 2011-06-30 | Shibaura Mechatronics Coporation | Substrate holding member, substrate processing apparatus, and substrate processing method |
US20100058984A1 (en) | 2008-09-10 | 2010-03-11 | Tetsuya Marubayashi | Substrate Processing Apparatus |
USD643055S1 (en) | 2008-09-11 | 2011-08-09 | Asm Japan K.K. | Heater block for use in a semiconductor processing tool |
US20100068414A1 (en) | 2008-09-12 | 2010-03-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US20100068009A1 (en) | 2008-09-12 | 2010-03-18 | Shingo Kimura | Vacuum processing apparatus |
US20100065758A1 (en) | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US20100068383A1 (en) | 2008-09-17 | 2010-03-18 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and computer readable storage medium |
US20100075488A1 (en) | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism |
US20100075507A1 (en) | 2008-09-22 | 2010-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices |
US20100075037A1 (en) | 2008-09-22 | 2010-03-25 | Marsh Eugene P | Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods |
US20110265725A1 (en) | 2008-09-26 | 2011-11-03 | Tokyo Electron Limited | Film deposition device and substrate processing device |
US20100081094A1 (en) | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Mask pattern forming method, fine pattern forming method, and film deposition apparatus |
US20110175011A1 (en) | 2008-09-29 | 2011-07-21 | Vat Holding Ag | Vacuum valve |
US20140202388A1 (en) | 2008-09-30 | 2014-07-24 | Eugene Technology Co., Ltd. | Shower head unit and chemical vapor deposition apparatus |
US20100078746A1 (en) | 2008-10-01 | 2010-04-01 | Oh-Jin Jung | Semiconductor device and method of manufacturing the same |
WO2010039363A2 (en) | 2008-10-01 | 2010-04-08 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US20100090149A1 (en) | 2008-10-01 | 2010-04-15 | Compressor Engineering Corp. | Poppet valve assembly, system, and apparatus for use in high speed compressor applications |
USD609655S1 (en) | 2008-10-03 | 2010-02-09 | Ngk Insulators, Ltd. | Electrostatic chuck |
US20100086703A1 (en) | 2008-10-03 | 2010-04-08 | Veeco Compound Semiconductor, Inc. | Vapor Phase Epitaxy System |
US8293016B2 (en) | 2008-10-07 | 2012-10-23 | Applied Materials, Inc. | Apparatus for efficient removal of halogen residues from etched substrates |
US20100133255A1 (en) | 2008-10-07 | 2010-06-03 | Applied Materials, Inc. | Apparatus for efficient removal of halogen residues from etched substrates |
US20100087069A1 (en) | 2008-10-07 | 2010-04-08 | Hitachi-Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
US20110195574A1 (en) | 2008-10-07 | 2011-08-11 | L'air Liquide Societe Anonyme Pour L'etude Et L'ex Ploitation Des Procedes Georges Claude | Niobium and vanadium organometallic precursors for thin film deposition |
US20110239940A1 (en) | 2008-10-08 | 2011-10-06 | Giacomo Benvenuti | Vapor phase deposition system |
KR101491726B1 (en) | 2008-10-08 | 2015-02-17 | 주성엔지니어링(주) | Method of gap filling in a semiconductor device |
US20100089320A1 (en) | 2008-10-13 | 2010-04-15 | Asm Genitech Korea Ltd. | Plasma processing member, deposition apparatus including the same, and depositing method using the same |
US20100092696A1 (en) | 2008-10-14 | 2010-04-15 | Asm Japan K.K. | Method for forming metal film by ald using beta-diketone metal complex |
US20100092679A1 (en) | 2008-10-14 | 2010-04-15 | Samsung Electronics Co., Ltd. | Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer |
US20100093187A1 (en) | 2008-10-14 | 2010-04-15 | Applied Materials, Inc. | Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
US20110254052A1 (en) | 2008-10-15 | 2011-10-20 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | Hybrid Group IV/III-V Semiconductor Structures |
JP2010097834A (en) | 2008-10-17 | 2010-04-30 | Ushio Inc | Backlight unit |
US7745346B2 (en) | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
US20100098862A1 (en) | 2008-10-21 | 2010-04-22 | Intevac, Inc. | Method and apparatus for precision surface modification in nano-imprint lithography |
US8338809B2 (en) | 2008-10-21 | 2012-12-25 | Applied Materials, Inc. | Ultraviolet reflector with coolant gas holes and method |
US8114734B2 (en) | 2008-10-21 | 2012-02-14 | United Microelectronics Corp. | Metal capacitor and method of making the same |
US7967913B2 (en) | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
US20100102417A1 (en) | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
US20120231771A1 (en) | 2008-10-27 | 2012-09-13 | Ebay, Inc. | Method and apparatus for authorizing a payment via a remote device |
US20100116207A1 (en) | 2008-11-07 | 2010-05-13 | Asm America, Inc. | Reaction chamber |
US20100119439A1 (en) | 2008-11-07 | 2010-05-13 | Tokyo Electron Limited | Ozone gas concentration measurement method, ozone gas concentration measurement system, and substrate processing apparatus |
US20100116209A1 (en) | 2008-11-10 | 2010-05-13 | Tokyo Electron Limited | Film deposition apparatus |
US20100119844A1 (en) | 2008-11-12 | 2010-05-13 | Applied Materials, Inc. | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas |
US20100129670A1 (en) | 2008-11-12 | 2010-05-27 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
US20100121100A1 (en) | 2008-11-12 | 2010-05-13 | Daniel Travis Shay | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
US20100120261A1 (en) | 2008-11-12 | 2010-05-13 | Microchip Technology Incorporated | Method of Nonstoichiometric CVD Dielectric Film Surface Passivation for Film Roughness Control |
US20100116208A1 (en) | 2008-11-13 | 2010-05-13 | Applied Materials, Inc. | Ampoule and delivery system for solid precursors |
US20100124618A1 (en) | 2008-11-14 | 2010-05-20 | Asm Japan K.K. | Method of Forming Insulation Film Using Plasma Treatment Cycles |
US20100124621A1 (en) | 2008-11-14 | 2010-05-20 | Asm Japan K.K. | Method of Forming Insulation Film by Modified PEALD |
US8647722B2 (en) | 2008-11-14 | 2014-02-11 | Asm Japan K.K. | Method of forming insulation film using plasma treatment cycles |
USD635597S1 (en) * | 2008-11-17 | 2011-04-05 | Applied Materials, Inc. | Lift pin |
USD640715S1 (en) * | 2008-11-17 | 2011-06-28 | Applied Materials, Inc. | Lift pin assembly |
US20100124610A1 (en) | 2008-11-19 | 2010-05-20 | Tokyo Electron Limited | Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium |
JP2010123843A (en) | 2008-11-21 | 2010-06-03 | Kyocera Corp | Electrostatic chuck |
US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
US20100126539A1 (en) | 2008-11-26 | 2010-05-27 | Semes Co., Ltd. | Spin head, apparatus for treating substrate, and method for treating substrate |
US20100130105A1 (en) | 2008-11-26 | 2010-05-27 | Semes Co., Ltd. | Substrate supporting unit, and apparatus and method for polishing substrate using the same |
US20100126666A1 (en) | 2008-11-27 | 2010-05-27 | Takumi Tandou | Plasma processing apparatus |
US20100134023A1 (en) | 2008-12-01 | 2010-06-03 | Mills Robert L | Methods and systems for dimmable fluorescent lighting |
US20100136216A1 (en) | 2008-12-01 | 2010-06-03 | Applied Materials, Inc. | Gas distribution blocker apparatus |
US8138676B2 (en) | 2008-12-01 | 2012-03-20 | Mills Robert L | Methods and systems for dimmable fluorescent lighting using multiple frequencies |
US8252659B2 (en) | 2008-12-02 | 2012-08-28 | Imec | Method for producing interconnect structures for integrated circuits |
US20100144150A1 (en) | 2008-12-04 | 2010-06-10 | Micron Technology, Inc. | Methods of Fabricating Substrates |
US8616765B2 (en) | 2008-12-08 | 2013-12-31 | Asm America, Inc. | Thermocouple |
US20120310440A1 (en) | 2008-12-08 | 2012-12-06 | Asm America, Inc. | Thermocouple |
US20100145547A1 (en) | 2008-12-08 | 2010-06-10 | Asm America, Inc. | Thermocouple |
WO2010077533A2 (en) | 2008-12-08 | 2010-07-08 | Asm America, Inc. | Thermocouple |
US20100140221A1 (en) | 2008-12-09 | 2010-06-10 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
US20100143609A1 (en) | 2008-12-09 | 2010-06-10 | Asm Japan K.K. | Method for forming low-carbon cvd film for filling trenches |
US20100140684A1 (en) | 2008-12-10 | 2010-06-10 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing the same |
US20110318142A1 (en) | 2008-12-11 | 2011-12-29 | Christopher Gage | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
US7902009B2 (en) | 2008-12-11 | 2011-03-08 | Intel Corporation | Graded high germanium compound films for strained semiconductor devices |
US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
US20110264250A1 (en) | 2008-12-15 | 2011-10-27 | Tokyo Electron Limited | Substrate processing system, substrate processing method and storage medium storing program |
US20100147396A1 (en) | 2008-12-15 | 2010-06-17 | Asm Japan K.K. | Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus |
US20130115768A1 (en) | 2008-12-19 | 2013-05-09 | Viljami J. Pore | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
US9129897B2 (en) | 2008-12-19 | 2015-09-08 | Asm International N.V. | Metal silicide, metal germanide, methods for making the same |
USD650818S1 (en) * | 2008-12-19 | 2011-12-20 | Applied Materials, Inc. | Inner lift pin |
US20120270393A1 (en) | 2008-12-19 | 2012-10-25 | Asm International N.V. | Metal silicide, metal germanide, methods for making the same |
US20100166630A1 (en) | 2008-12-23 | 2010-07-01 | Mks Instruments, Inc. | Reactive chemical containment system |
US8030129B2 (en) | 2008-12-24 | 2011-10-04 | Samsung Electronics Co., Ltd. | Method of fabricating nonvolatile memory device |
US20100159638A1 (en) | 2008-12-24 | 2010-06-24 | Samsung Electronics Co., Ltd. | Method of fabricating nonvolatile memory device |
US20140061770A1 (en) | 2008-12-26 | 2014-03-06 | SK Hynix Inc. | Nonvolatile memory device |
US20100163187A1 (en) | 2008-12-26 | 2010-07-01 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20100163524A1 (en) | 2008-12-26 | 2010-07-01 | Hideki Arai | Method for manufacturing susceptor |
US20100186669A1 (en) | 2008-12-29 | 2010-07-29 | K.C. Tech Co., Ltd. | Atomic layer deposition apparatus |
KR20100077442A (en) | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | Showerhead and atomic layer deposition apparatus having the same |
KR20100079920A (en) | 2008-12-31 | 2010-07-08 | 엘아이지에이디피 주식회사 | Apparatus for joining of substrate |
US20100163937A1 (en) | 2008-12-31 | 2010-07-01 | Scott Bruce Clendenning | Methods of forming nickel sulfide film on a semiconductor device |
US20100183825A1 (en) | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
US20100170868A1 (en) | 2009-01-07 | 2010-07-08 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
US20100173432A1 (en) | 2009-01-08 | 2010-07-08 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US8216380B2 (en) | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US20110117737A1 (en) | 2009-01-09 | 2011-05-19 | Birendra Agarwala | Method of Forming Metal Interconnect Structures in Ultra Low-K Dielectrics |
US20100178137A1 (en) | 2009-01-11 | 2010-07-15 | Applied Materials, Inc. | Systems, apparatus and methods for moving substrates |
US20100178423A1 (en) | 2009-01-13 | 2010-07-15 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
USD606952S1 (en) | 2009-01-16 | 2009-12-29 | Asm Genitech Korea Ltd. | Plasma inducing plate for semiconductor deposition apparatus |
US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
US7919416B2 (en) | 2009-01-21 | 2011-04-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US20100144162A1 (en) | 2009-01-21 | 2010-06-10 | Asm Japan K.K. | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD |
US7972980B2 (en) | 2009-01-21 | 2011-07-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US8142862B2 (en) | 2009-01-21 | 2012-03-27 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US20100184302A1 (en) | 2009-01-21 | 2010-07-22 | Asm Japan K.K. | Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD |
US20100189923A1 (en) | 2009-01-29 | 2010-07-29 | Asm Japan K.K. | Method of forming hardmask by plasma cvd |
US20100193955A1 (en) | 2009-02-02 | 2010-08-05 | Asm America, Inc. | Plasma-enhanced atomic layer deposition of conductive material over dielectric layers |
US20100197107A1 (en) | 2009-02-03 | 2010-08-05 | Kabushiki Kaisha Toshiba | Method of fabricating semiconductor device |
US20100195392A1 (en) | 2009-02-03 | 2010-08-05 | Micron Technology, Inc. | Capacitor structure having improved area efficiency, a memory device including the same, and a method of forming the same |
US20100193501A1 (en) | 2009-02-04 | 2010-08-05 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
US8307472B1 (en) | 2009-02-04 | 2012-11-13 | Thomas Jason Saxon | Light emitting diode system |
US20100203242A1 (en) | 2009-02-06 | 2010-08-12 | Applied Materials, Inc. | self-cleaning susceptor for solar cell processing |
US20100202860A1 (en) | 2009-02-09 | 2010-08-12 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US8287648B2 (en) | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US20100210108A1 (en) | 2009-02-13 | 2010-08-19 | Tokyo Electron Limited | Radiation-assisted selective deposition of metal-containing cap layers |
US20100209598A1 (en) | 2009-02-13 | 2010-08-19 | Advanced Technology Materials, Inc. | IN SITU GENERATION OF RuO4 FOR ALD OF Ru AND Ru RELATED MATERIALS |
US20120003500A1 (en) | 2009-02-16 | 2012-01-05 | Mitsubishi Plastics, Inc. | Process for producing multilayered gas-barrier film |
US9460954B2 (en) | 2009-02-22 | 2016-10-04 | Mapper Lithography Ip B.V. | Method of clamping a substrate and clamp preparation unit using capillary clamping force |
US8895108B2 (en) | 2009-02-23 | 2014-11-25 | Veeco Ald Inc. | Method for forming thin film using radicals generated by plasma |
US9920451B2 (en) | 2009-02-25 | 2018-03-20 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US20100219757A1 (en) | 2009-02-27 | 2010-09-02 | Souheil Benzerrouk | Method and Apparatus of Providing Power to Ignite and Sustain a Plasma in a Reactive Gas Generator |
US20120031500A1 (en) | 2009-03-03 | 2012-02-09 | Jun Hirose | Fluid control apparatus |
US8586484B2 (en) | 2009-03-04 | 2013-11-19 | Fuji Electric Co., Ltd. | Film forming method and film forming apparatus |
JP2010205967A (en) | 2009-03-04 | 2010-09-16 | Tokyo Electron Ltd | Plasma etching method, plasma etching device, and computer storage medium |
US20120115257A1 (en) | 2009-03-04 | 2012-05-10 | Fuji Electric Co., Ltd. | Film forming method and film forming apparatus |
WO2010100702A1 (en) | 2009-03-04 | 2010-09-10 | 富士電機ホールディングス株式会社 | Film forming method and film forming apparatus |
US20110263107A1 (en) | 2009-03-05 | 2011-10-27 | Samsung Mobile Display Co., Ltd. | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
US8048783B2 (en) | 2009-03-05 | 2011-11-01 | Samsung Mobile Display Co., Ltd. | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
US20100227458A1 (en) | 2009-03-05 | 2010-09-09 | Chung Yun-Mo | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
USD616394S1 (en) | 2009-03-06 | 2010-05-25 | Tokyo Electron Limited | Support of wafer boat for manufacturing semiconductor wafers |
USD616390S1 (en) | 2009-03-06 | 2010-05-25 | Tokyo Electron Limited | Quartz cover for manufacturing semiconductor wafers |
US20100230051A1 (en) | 2009-03-10 | 2010-09-16 | Tokyo Electron Limited | Shower head and plasma processing apparatus having same |
US8282769B2 (en) | 2009-03-10 | 2012-10-09 | Tokyo Electron Limited | Shower head and plasma processing apparatus having same |
US20100229795A1 (en) | 2009-03-10 | 2010-09-16 | Hitach-Kokusai Electric Inc. | Substrate processing apparatus |
US20100229965A1 (en) | 2009-03-12 | 2010-09-16 | Horiba Stec, Co., Ltd. | Mass flow meter, mass flow controller, mass flow meter system and mass flow control system containing the mass flow meter and the mass flow controller |
US20120001172A1 (en) | 2009-03-13 | 2012-01-05 | Jian-Ku Shang | Rapid crystallization of heavily doped metal oxides and products produced thereby |
US20100233886A1 (en) | 2009-03-13 | 2010-09-16 | Air Products And Chemicals, Inc. | Dielectric Films Comprising Silicon And Methods For Making Same |
US20100233885A1 (en) | 2009-03-13 | 2010-09-16 | Tokyo Electron Limited | Substrate processing method |
US20100236691A1 (en) | 2009-03-18 | 2010-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus and Manufacturing Method of Lighting Device |
WO2010110558A2 (en) | 2009-03-23 | 2010-09-30 | 주식회사 테라세미콘 | In-line heat treatment apparatus |
US20100248465A1 (en) | 2009-03-24 | 2010-09-30 | In-Sun Yi | Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same |
US20120006489A1 (en) | 2009-03-26 | 2012-01-12 | Shogo Okita | Plasma processing apparatus and plasma processing method |
US20120034793A1 (en) | 2009-03-27 | 2012-02-09 | Tokyo Electron Limited | Method for forming metal nitride film |
US9004744B1 (en) | 2009-03-30 | 2015-04-14 | Techni-Blend, Inc. | Fluid mixer using countercurrent injection |
US20100246630A1 (en) | 2009-03-31 | 2010-09-30 | Rosemount Inc. | Thermocouple temperature sensor with connection detection circuitry |
US20100243166A1 (en) | 2009-03-31 | 2010-09-30 | Tokyo Electron Limited | Gas flow path structure and substrate processing apparatus |
US20100255218A1 (en) | 2009-04-01 | 2010-10-07 | Asm Japan K.K. | Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature |
US20120322252A1 (en) | 2009-04-01 | 2012-12-20 | Byoungkeun Son | Semiconductor memory device comprising three-dimensional memory cell array |
US8198168B2 (en) | 2009-04-01 | 2012-06-12 | Elpida Memory, Inc. | Method of manufacturing capacitive insulating film for capacitor |
US8197915B2 (en) | 2009-04-01 | 2012-06-12 | Asm Japan K.K. | Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature |
US20200056286A1 (en) | 2009-04-06 | 2020-02-20 | ASM IP Holding, B.V. | Semiconductor processing reactor and components thereof |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US20160289828A1 (en) | 2009-04-06 | 2016-10-06 | ASM IP Holding, B.V. | Semiconductor processing reactor and components thereof |
US20100307415A1 (en) | 2009-04-06 | 2010-12-09 | Eric Shero | Semiconductor processing reactor and components thereof |
WO2010118051A2 (en) | 2009-04-06 | 2010-10-14 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
US20100255658A1 (en) | 2009-04-07 | 2010-10-07 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
JP2010251444A (en) | 2009-04-14 | 2010-11-04 | Shin Etsu Handotai Co Ltd | Method of manufacturing soi wafer |
US20110008950A1 (en) | 2009-04-20 | 2011-01-13 | Applied Materials, Inc. | Remote Hydrogen Plasma With Ion Filter for Terminating Silicon Dangling Bonds |
US8404499B2 (en) | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
US20100267248A1 (en) | 2009-04-20 | 2010-10-21 | Applied Materials, Inc. | Post Treatment Methods for Oxide Layers on Semiconductor Devices |
US20100267224A1 (en) | 2009-04-20 | 2010-10-21 | Applied Materials, Inc. | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
US20100294199A1 (en) | 2009-04-21 | 2010-11-25 | Applied Materials, Inc. | Cvd apparatus for improved film thickness non-uniformity and particle performance |
US20100266765A1 (en) | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
JP2010255218A (en) | 2009-04-22 | 2010-11-11 | Jfe Galvanizing & Coating Co Ltd | Fitting-type folded-plate roofing material |
US8071452B2 (en) | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
US20120043617A1 (en) | 2009-04-28 | 2012-02-23 | Canon Anelva Corporation | Semiconductor device and method of manufacturing the same |
US8683943B2 (en) | 2009-05-01 | 2014-04-01 | Tokyo Electron Limited | Plasma process apparatus and plasma process method |
US9267850B2 (en) | 2009-05-06 | 2016-02-23 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
US9297705B2 (en) | 2009-05-06 | 2016-03-29 | Asm America, Inc. | Smart temperature measuring device |
WO2010129431A2 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Thermocouple |
US8382370B2 (en) | 2009-05-06 | 2013-02-26 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
US8100583B2 (en) | 2009-05-06 | 2012-01-24 | Asm America, Inc. | Thermocouple |
WO2010129428A1 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
WO2010129430A1 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Smart temperature measuring device |
US20100282163A1 (en) | 2009-05-06 | 2010-11-11 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
KR20100032812A (en) | 2009-05-11 | 2010-03-26 | 주식회사 테스 | Cvd apparatus and substrate processing system |
KR20100122701A (en) | 2009-05-13 | 2010-11-23 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
US20120058270A1 (en) | 2009-05-15 | 2012-03-08 | Wayne State University | Thermally stable volatile film precursors |
US7842622B1 (en) | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
US20120115250A1 (en) | 2009-05-20 | 2012-05-10 | Kabushiki Kaisha Toshiba | Concave-convex pattern forming method and magnetic tunnel junction element forming method |
US20100301752A1 (en) | 2009-05-28 | 2010-12-02 | Osram Sylvania Inc. | Resetting an electronic ballast in the event of fault |
US8004198B2 (en) | 2009-05-28 | 2011-08-23 | Osram Sylvania Inc. | Resetting an electronic ballast in the event of fault |
US9315897B2 (en) | 2009-06-01 | 2016-04-19 | Korea Institute Of Industrial Technology | Showerhead for film depositing vacuum equipment |
US20120064764A1 (en) | 2009-06-05 | 2012-03-15 | Andrew Llc | Clamp and Grip Coaxial Connector |
US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
KR20100132779A (en) | 2009-06-10 | 2010-12-20 | 주성엔지니어링(주) | Method for manufacturing thin film and apparatus for the same |
US20100317198A1 (en) | 2009-06-12 | 2010-12-16 | Novellus Systems, Inc. | Remote plasma processing of interface surfaces |
US8779502B2 (en) | 2009-06-12 | 2014-07-15 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory |
USD652896S1 (en) | 2009-06-17 | 2012-01-24 | Neoperl Gmbh | Faucet stream former |
US20100322822A1 (en) | 2009-06-19 | 2010-12-23 | Abbott Laboratories | System for managing inventory of bulk liquids |
US7825040B1 (en) | 2009-06-22 | 2010-11-02 | Asm Japan K.K. | Method for depositing flowable material using alkoxysilane or aminosilane precursor |
US20120080756A1 (en) | 2009-07-01 | 2012-04-05 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US20110171380A1 (en) | 2009-07-01 | 2011-07-14 | Shinya Higashi | Susceptor, coating apparatus and coating method using the susceptor |
US20110003450A1 (en) | 2009-07-03 | 2011-01-06 | Young-Ho Lee | Method for manufacturing semicondutor device with strained channel |
US20110006406A1 (en) | 2009-07-08 | 2011-01-13 | Imec | Fabrication of porogen residues free and mechanically robust low-k materials |
US20120135145A1 (en) | 2009-07-08 | 2012-05-31 | Sung Tae Je | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
US8382939B2 (en) | 2009-07-13 | 2013-02-26 | Applied Materials, Inc. | Plasma processing chamber with enhanced gas delivery |
US20120175751A1 (en) | 2009-07-14 | 2012-07-12 | Julien Gatineau | Deposition of group iv metal-containing films at high temperature |
US8334219B2 (en) | 2009-07-15 | 2012-12-18 | Asm Japan K.K. | Method of forming stress-tuned dielectric film having Si-N bonds by modified PEALD |
US20110014795A1 (en) | 2009-07-15 | 2011-01-20 | Asm Japan K.K. | Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by Modified PEALD |
US20120107607A1 (en) | 2009-07-17 | 2012-05-03 | Mitsui Chemicals, Inc. | Multilayered material and method of producing the same |
US20110039419A1 (en) | 2009-07-17 | 2011-02-17 | Applied Materials, Inc. | Methods for forming dielectric layers |
US20110021033A1 (en) | 2009-07-22 | 2011-01-27 | Tokyo Electron Limited | Batch cvd method and apparatus for semiconductor process |
US8876974B2 (en) | 2009-07-28 | 2014-11-04 | Ligadp Co., Ltd. | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
US8071451B2 (en) | 2009-07-29 | 2011-12-06 | Axcelis Technologies, Inc. | Method of doping semiconductors |
US8991214B2 (en) | 2009-07-30 | 2015-03-31 | Techno Quartz Inc. | Method of refurbishing a quartz glass component |
US8435894B2 (en) | 2009-08-04 | 2013-05-07 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US8119527B1 (en) | 2009-08-04 | 2012-02-21 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US20110121503A1 (en) | 2009-08-05 | 2011-05-26 | Applied Materials, Inc. | Cvd apparatus |
US20110034039A1 (en) | 2009-08-06 | 2011-02-10 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable cvd processes |
US20110031562A1 (en) | 2009-08-07 | 2011-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing layer of a field effect transistor |
US20120177845A1 (en) | 2009-08-07 | 2012-07-12 | Sigma-Aldrich Co. Llc | High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films |
US20140366804A1 (en) | 2009-08-11 | 2014-12-18 | Veeco Ald Inc. | Performing Atomic Layer Deposition on Large Substrate Using Scanning Reactors |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
WO2011019950A1 (en) | 2009-08-14 | 2011-02-17 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20120098107A1 (en) | 2009-08-14 | 2012-04-26 | Petri Raisanen | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20140346650A1 (en) | 2009-08-14 | 2014-11-27 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20110070380A1 (en) | 2009-08-14 | 2011-03-24 | Eric Shero | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
US20110183527A1 (en) | 2009-08-18 | 2011-07-28 | Youn-Joung Cho | Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor |
US7989365B2 (en) | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
US20110045676A1 (en) | 2009-08-18 | 2011-02-24 | Applied Materials, Inc. | Remote plasma source seasoning |
US20120190208A1 (en) | 2009-08-20 | 2012-07-26 | Tokyo Electron Limited | Plasma treatment device and plasma treatment method |
US20120160809A1 (en) | 2009-08-21 | 2012-06-28 | Tokyo Electron Limited | Plasma processing apparatus and substrate processing method |
US20110185969A1 (en) | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
US20120207456A1 (en) | 2009-08-21 | 2012-08-16 | Ap Systems Inc. | Heater block for a rapid thermal processing apparatus |
US20110053383A1 (en) | 2009-08-26 | 2011-03-03 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
US20110052833A1 (en) | 2009-08-27 | 2011-03-03 | Applied Materials, Inc. | Gas distribution showerhead and method of cleaning |
US20140377960A1 (en) | 2009-08-27 | 2014-12-25 | Tokyo Electron Limited | Plasma etching method |
US20110117728A1 (en) | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
USD633452S1 (en) | 2009-08-27 | 2011-03-01 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
USD634719S1 (en) | 2009-08-27 | 2011-03-22 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
US20110183079A1 (en) | 2009-08-31 | 2011-07-28 | Penn State Research Foundation | Plasma enhanced atomic layer deposition process |
US20110048769A1 (en) | 2009-09-01 | 2011-03-03 | Elpida Memory, Inc. | Insulating film, method of manufacturing the same, and semiconductor device |
US20120231611A1 (en) | 2009-09-02 | 2012-09-13 | L'air Liquide Societe Anonyme Pour L'exploitation Des Procedes Georges Claude | Dihalide germanium(ii) precursors for germanium-containing film depositions |
US20110048642A1 (en) | 2009-09-02 | 2011-03-03 | Tokyo Electron Limited | Plasma processing apparatus |
US20120146113A1 (en) | 2009-09-04 | 2012-06-14 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US20110057248A1 (en) | 2009-09-09 | 2011-03-10 | Yi Ma | Varied silicon richness silicon nitride formation |
US20110056626A1 (en) | 2009-09-10 | 2011-03-10 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110065289A1 (en) | 2009-09-14 | 2011-03-17 | Hitachi-Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
US20120186521A1 (en) | 2009-09-17 | 2012-07-26 | Tokyo Electron Limited | Plasma processing apparatus and gas supply device for plasma processing apparatus |
US20110070740A1 (en) | 2009-09-18 | 2011-03-24 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8419959B2 (en) | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8278224B1 (en) | 2009-09-24 | 2012-10-02 | Novellus Systems, Inc. | Flowable oxide deposition using rapid delivery of process gases |
US20110076401A1 (en) | 2009-09-25 | 2011-03-31 | Hermes-Epitek Corporation | Method of Making Showerhead for Semiconductor Processing Apparatus |
US9099505B2 (en) | 2009-09-26 | 2015-08-04 | Tokyo Electron Limited | Thermal processing apparatus and cooling method |
US20120183689A1 (en) | 2009-09-29 | 2012-07-19 | Tokyo Electron Limited | Ni film forming method |
US8076251B2 (en) | 2009-09-30 | 2011-12-13 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus |
US8415258B2 (en) | 2009-09-30 | 2013-04-09 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus |
US20110089469A1 (en) | 2009-10-02 | 2011-04-21 | Imec | Method for Manufacturing a Low Defect Interface Between a Dielectric and a III-V Compound |
US8828886B2 (en) | 2009-10-05 | 2014-09-09 | Tohoku University | Low dielectric constant insulating film and method for forming the same |
US20110083496A1 (en) | 2009-10-09 | 2011-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus with simultaneously movable stages |
US8173554B2 (en) | 2009-10-14 | 2012-05-08 | Asm Japan K.K. | Method of depositing dielectric film having Si-N bonds by modified peald method |
US20120220139A1 (en) | 2009-10-14 | 2012-08-30 | Asm Japan K.K. | Method of depositing dielectric film by modified peald method |
US20110086516A1 (en) | 2009-10-14 | 2011-04-14 | Asm Japan K.K. | METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD |
US8415259B2 (en) | 2009-10-14 | 2013-04-09 | Asm Japan K.K. | Method of depositing dielectric film by modified PEALD method |
US20110091650A1 (en) | 2009-10-15 | 2011-04-21 | Kojima Press Industry Co., Ltd. | Method of forming organic polymer thin film and an apparatus for forming the organic polymer thin film |
US8711338B2 (en) | 2009-10-16 | 2014-04-29 | Msp Corporation | Apparatus for counting particles in a gas |
US20120269962A1 (en) | 2009-10-20 | 2012-10-25 | Asm International N.V. | Process for passivating dielectric films |
US20140047705A1 (en) | 2009-10-21 | 2014-02-20 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
US20110089419A1 (en) | 2009-10-21 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20180087154A1 (en) | 2009-10-26 | 2018-03-29 | Asm Ip Holding B.V. | Synthesis and use of precursors for ald of group va element containing thin films |
US20120329208A1 (en) | 2009-10-26 | 2012-12-27 | Asm International N.V. | Synthesis and use of precursors for ald of group va element containing thin films |
US20110097901A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
US10060473B2 (en) | 2009-10-29 | 2018-08-28 | Oceana Energy Company | Energy conversion systems and methods |
US20110104395A1 (en) | 2009-11-02 | 2011-05-05 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and storage medium |
US20110100489A1 (en) | 2009-11-04 | 2011-05-05 | Tokyo Electron Limited | Substrate process apparatus, substrate process method, and computer readable storage medium |
US20110108194A1 (en) | 2009-11-10 | 2011-05-12 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20120036732A1 (en) | 2009-11-12 | 2012-02-16 | Varadarajan Bhadri N | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using uv curing in ammonia |
US20110108741A1 (en) | 2009-11-12 | 2011-05-12 | Vela Technologies, Inc. | Integrating Optical System and Methods |
US20130303803A1 (en) | 2009-11-13 | 2013-11-14 | Basf Se | Method for purifying a chlorine supply |
US20110117492A1 (en) | 2009-11-13 | 2011-05-19 | Tokyo Electron Limited | Photoresist coating and developing apparatus, substrate transfer method and interface apparatus |
US20110117749A1 (en) | 2009-11-17 | 2011-05-19 | Lam Research Corporation | Method for reducing line width roughness with plasma pre-etch treatment on photoresist |
US8367528B2 (en) | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US20110117732A1 (en) | 2009-11-17 | 2011-05-19 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US20110115378A1 (en) | 2009-11-18 | 2011-05-19 | Applied Materials, Inc. | Plasma source design |
US20110114601A1 (en) | 2009-11-18 | 2011-05-19 | Applied Materials, Inc. | Plasma source design |
US20110117490A1 (en) | 2009-11-19 | 2011-05-19 | Rohm And Haas Electronic Materials Llc | Methods of forming electronic devices |
US20110124196A1 (en) | 2009-11-20 | 2011-05-26 | Hynix Semiconductor Inc. | Method for forming fine pattern in semiconductor device |
USD629874S1 (en) | 2009-11-23 | 2010-12-28 | Ty Gerard Hermans | Garbage disposal cover with scraper |
KR20110058534A (en) | 2009-11-26 | 2011-06-01 | 주식회사 테스 | Gas distribution apparatus and process chamber having the same |
US20110127702A1 (en) | 2009-11-30 | 2011-06-02 | Gautam Vivek | Dynamic control of lance utilizing counterflow fluidic techniques |
US20110132542A1 (en) | 2009-12-03 | 2011-06-09 | Tokyo Electron Limited | Plasma processing apparatus |
US20110140172A1 (en) | 2009-12-10 | 2011-06-16 | Transphorm Inc. | Reverse side engineered iii-nitride devices |
US20120244703A1 (en) | 2009-12-11 | 2012-09-27 | Sumco Corporation | Tray for cvd and method for forming film using same |
US20110143461A1 (en) | 2009-12-15 | 2011-06-16 | Varian Semiconductor Equipment Associates, Inc. | In vacuum optical wafer heater for cryogenic processing |
US20110139748A1 (en) | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US20110140173A1 (en) | 2009-12-16 | 2011-06-16 | National Semiconductor Corporation | Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices |
US20110155264A1 (en) | 2009-12-24 | 2011-06-30 | Horiba, Ltd. | Source gas concentration control system |
US20110155322A1 (en) | 2009-12-28 | 2011-06-30 | Tokyo Electron Limited | Plasma processing apparatus |
US20110159202A1 (en) | 2009-12-29 | 2011-06-30 | Asm Japan K.K. | Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD |
US20110159680A1 (en) | 2009-12-31 | 2011-06-30 | Samsung Electronics Co., Ltd. | Method of forming a dielectric layer and method of manufacturing a semiconductor device using the same |
USD653734S1 (en) | 2010-01-08 | 2012-02-07 | Bulk Tank, Inc. | Screened gasket |
US20110171775A1 (en) | 2010-01-13 | 2011-07-14 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US8573154B2 (en) | 2010-01-13 | 2013-11-05 | Honda Motor Co., Ltd. | Plasma film forming apparatus |
US20110168330A1 (en) | 2010-01-14 | 2011-07-14 | Tokyo Electron Limited | Support structure, load lock apparatus, processing apparatus and transfer mechanism |
US20110177648A1 (en) | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Method of manufacturing thin film solar cells having a high conversion efficiency |
USD651291S1 (en) | 2010-01-24 | 2011-12-27 | Glv International (1995) Ltd. | Duct connector ring |
US20110183269A1 (en) | 2010-01-25 | 2011-07-28 | Hongbin Zhu | Methods Of Forming Patterns, And Methods For Trimming Photoresist Features |
US20110180233A1 (en) | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US20110210468A1 (en) | 2010-01-27 | 2011-09-01 | Shannon Mark A | Method of forming a patterned layer of a material on a substrate |
US20110186984A1 (en) | 2010-01-29 | 2011-08-04 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US8507720B2 (en) | 2010-01-29 | 2013-08-13 | Lyondell Chemical Technology, L.P. | Titania-alumina supported palladium catalyst |
US8927906B2 (en) | 2010-02-04 | 2015-01-06 | Tokyo Electron Limited | Heating device, coating/developing system, heating method, coating/developing method, and recording medium having program for executing heating method or coating/developing method |
US20120315113A1 (en) | 2010-02-05 | 2012-12-13 | Tokyo Electron Limited | Substrate holder, substrate transfer apparatus, and substrate processing apparatus |
JP2011162830A (en) | 2010-02-09 | 2011-08-25 | Fuji Electric Co Ltd | Film-forming method with plasma cvd technique, substrate having film formed thereon, and film-forming apparatus |
US20110192820A1 (en) | 2010-02-09 | 2011-08-11 | Sungkyunkwan University Foundation For Corporate Collaboration | Atomic layer etching apparatus and etching method using the same |
US20110198034A1 (en) | 2010-02-11 | 2011-08-18 | Jennifer Sun | Gas distribution showerhead with coating material for semiconductor processing |
US20110198417A1 (en) | 2010-02-12 | 2011-08-18 | Applied Materials, Inc. | Process chamber gas flow improvements |
US8562272B2 (en) | 2010-02-16 | 2013-10-22 | Lam Research Corporation | Substrate load and unload mechanisms for high throughput |
US20110198736A1 (en) | 2010-02-17 | 2011-08-18 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
US20130059078A1 (en) | 2010-02-23 | 2013-03-07 | Julien Gatineau | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
US20120307588A1 (en) | 2010-02-23 | 2012-12-06 | Asahi Organic Chemicals Industry Co., Ltd. | In-line-type fluid mixer |
USD625977S1 (en) | 2010-02-25 | 2010-10-26 | Vertex Stone and Chinaware Ltd. | Spacer tool |
US20110207332A1 (en) | 2010-02-25 | 2011-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film coated process kits for semiconductor manufacturing tools |
US20110212625A1 (en) | 2010-02-26 | 2011-09-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20130118895A1 (en) | 2010-02-26 | 2013-05-16 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Apparatus and method for reactive ion etching |
JP2011181681A (en) | 2010-03-01 | 2011-09-15 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition method and atomic layer deposition device |
US20110217838A1 (en) | 2010-03-05 | 2011-09-08 | Asm Japan K.K. | Method for forming interconnect structure having airgap |
US8241991B2 (en) | 2010-03-05 | 2012-08-14 | Asm Japan K.K. | Method for forming interconnect structure having airgap |
US9175394B2 (en) | 2010-03-12 | 2015-11-03 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
US20110223334A1 (en) | 2010-03-12 | 2011-09-15 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
US20110226421A1 (en) | 2010-03-16 | 2011-09-22 | Tokyo Electron Limited | Plasma processing apparatus |
US20130005122A1 (en) | 2010-03-18 | 2013-01-03 | Soitec | Method for finishing a substrate of the semiconductor-on-insulator type |
US20110236201A1 (en) | 2010-03-23 | 2011-09-29 | Sumedhkumar Vyankatesh Shende | Method and apparatus for radial exhaust gas turbine |
US20110237040A1 (en) | 2010-03-24 | 2011-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Main spacer trim-back method for replacement gate process |
US20110236594A1 (en) | 2010-03-25 | 2011-09-29 | Jason Haverkamp | In-Situ Deposition of Film Stacks |
US20110236600A1 (en) | 2010-03-25 | 2011-09-29 | Keith Fox | Smooth Silicon-Containing Films |
US9017933B2 (en) | 2010-03-29 | 2015-04-28 | Tokyo Electron Limited | Method for integrating low-k dielectrics |
US20130093321A1 (en) | 2010-03-31 | 2013-04-18 | Tokyo Electron Limited | Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus |
US20130078376A1 (en) | 2010-04-01 | 2013-03-28 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal nitride containing film deposition using combination of amino-metal and halogenated metal precursors |
US20130023120A1 (en) | 2010-04-02 | 2013-01-24 | Tokyo Electron Limited | Method of forming mask pattern and method of manufacturing semiconductor device |
US20110244673A1 (en) | 2010-04-05 | 2011-10-06 | Jik-Ho Cho | Method for fabricating semiconductor device with buried gates |
US20130052836A1 (en) | 2010-04-09 | 2013-02-28 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
US20110256727A1 (en) | 2010-04-14 | 2011-10-20 | Asm Genitech Korea Ltd. | Method of forming semiconductor patterns |
US20110253044A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Showerhead assembly with metrology port purge |
US8252691B2 (en) | 2010-04-14 | 2012-08-28 | Asm Genitech Korea Ltd. | Method of forming semiconductor patterns |
USRE47170E1 (en) | 2010-04-14 | 2018-12-18 | Asm Ip Holding B.V. | Method of forming semiconductor patterns |
US20160336178A1 (en) | 2010-04-15 | 2016-11-17 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
US20110256724A1 (en) | 2010-04-15 | 2011-10-20 | Novellus Systems, Inc. | Gas and liquid injection methods and apparatus |
US20120028454A1 (en) | 2010-04-15 | 2012-02-02 | Shankar Swaminathan | Plasma activated conformal dielectric film deposition |
US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US20160379826A9 (en) | 2010-04-15 | 2016-12-29 | Lam Research Corporation | Capped ald films for doping fin-shaped channel regions of 3-d ic transistors |
US20140106574A1 (en) | 2010-04-15 | 2014-04-17 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite peald and pecvd method |
US20150249013A1 (en) | 2010-04-15 | 2015-09-03 | Lam Research Corporation | Capped ald films for doping fin-shaped channel regions of 3-d ic transistors |
US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
US20140113457A1 (en) | 2010-04-15 | 2014-04-24 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US20130040447A1 (en) | 2010-04-15 | 2013-02-14 | Shankar Swaminathan | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US20190311897A1 (en) | 2010-04-15 | 2019-10-10 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite peald and pecvd method |
US20120009802A1 (en) | 2010-04-15 | 2012-01-12 | Adrien Lavoie | Plasma activated conformal dielectric film deposition |
US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
US20110256726A1 (en) | 2010-04-15 | 2011-10-20 | Adrien Lavoie | Plasma activated conformal film deposition |
US20160163972A1 (en) | 2010-04-15 | 2016-06-09 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US8790749B2 (en) | 2010-04-16 | 2014-07-29 | Zuzana {hacek over (S)}kutchanová | Method for providing a grinding surface on glass implements used in personal care |
US20110259519A1 (en) | 2010-04-23 | 2011-10-27 | Lam Research Corporation | Coating method for gas delivery system |
US20110263115A1 (en) | 2010-04-26 | 2011-10-27 | Applied Materials, Inc. | Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors |
US8293642B2 (en) | 2010-04-27 | 2012-10-23 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor devices |
US20150155370A1 (en) | 2010-04-28 | 2015-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US20110265715A1 (en) | 2010-04-29 | 2011-11-03 | Amt Ag | Device for Coating Substrates by Means of High-Velocity Flame Spraying |
US20110266611A1 (en) | 2010-04-29 | 2011-11-03 | Beom-Yong Kim | Nonvolatile memory device and method for fabricating the same |
US20110269314A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Process chambers having shared resources and methods of use thereof |
US8496756B2 (en) | 2010-04-30 | 2013-07-30 | Applied Materials, Inc. | Methods for processing substrates in process systems having shared resources |
US20120031333A1 (en) | 2010-04-30 | 2012-02-09 | Applied Materials, Inc. | Vertical inline cvd system |
US20110265549A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Methods and apparatus for calibrating flow controllers in substrate processing systems |
US20150259801A1 (en) | 2010-04-30 | 2015-09-17 | Tokyo Electron Limited | Method for forming carbon nanotubes and carbon nanotube film forming apparatus |
US20110265951A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
US20110275166A1 (en) | 2010-05-07 | 2011-11-10 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8241992B2 (en) | 2010-05-10 | 2012-08-14 | International Business Machines Corporation | Method for air gap interconnect integration using photo-patternable low k material |
US20110277690A1 (en) | 2010-05-14 | 2011-11-17 | Sierra Solar Power, Inc. | Multi-channel gas-delivery system |
US20110286819A1 (en) | 2010-05-20 | 2011-11-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US20110294075A1 (en) | 2010-05-25 | 2011-12-01 | United Microelectronics Corp. | Patterning method |
US20130061755A1 (en) | 2010-05-28 | 2013-03-14 | Jeffrey W. Frederick | Integrated Adsorber Head and Valve Design and Swing Adsorption Methods Related Thereto |
US20110291243A1 (en) | 2010-05-28 | 2011-12-01 | Applied Materials, Inc. | Planarizing etch hardmask to increase pattern density and aspect ratio |
WO2011149640A1 (en) | 2010-05-28 | 2011-12-01 | Exxonmobil Upstream Research Company | Integrated adsorber head and valve design and swing adsorption methods related thereto |
US20130068727A1 (en) | 2010-06-01 | 2013-03-21 | Shogo Okita | Plasma processing apparatus and plasma processing method |
US20120128897A1 (en) | 2010-06-02 | 2012-05-24 | Air Products And Chemicals, Inc. | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same |
US10193429B2 (en) | 2010-06-02 | 2019-01-29 | Boulder Wind Power, Inc. | Air gap control systems and methods |
US20110298062A1 (en) | 2010-06-04 | 2011-12-08 | Applied Materials, Inc. | Metal gate structures and methods for forming thereof |
US20110297088A1 (en) | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
US9281223B2 (en) | 2010-06-08 | 2016-03-08 | National Institute Of Advanced Industrial Science And Technology | Coupling system |
US9174178B2 (en) | 2010-06-09 | 2015-11-03 | The Procter & Gamble Company | Semi-continuous feed production of liquid personal care compositions |
US20110305102A1 (en) | 2010-06-09 | 2011-12-15 | Jason Andrew Berger | Semi-Continuous Feed Production of Liquid Personal Care Compositions |
US20130084156A1 (en) | 2010-06-10 | 2013-04-04 | Nabtesco Corporation | Robot arm |
US8956971B2 (en) | 2010-06-10 | 2015-02-17 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
US20110312191A1 (en) | 2010-06-18 | 2011-12-22 | Fujitsu Semiconductor Limited | Semiconductor device manufacturing method |
US20110318888A1 (en) | 2010-06-29 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20110318935A1 (en) | 2010-06-29 | 2011-12-29 | Tokyo Electron Limited | Method of setting thickness of dielectric and substrate processing apparatus having dielectric disposed in electrode |
US8741065B2 (en) | 2010-06-30 | 2014-06-03 | Tokyo Electron Limited | Substrate processing apparatus |
US20120003599A1 (en) | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Substrate support for use with multi-zonal heating sources |
US20120024223A1 (en) | 2010-07-02 | 2012-02-02 | Matheson Tri-Gas, Inc. | Thin films and methods of making them using cyclohexasilane |
US20120003831A1 (en) | 2010-07-05 | 2012-01-05 | Daehyuk Kang | Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines |
US20130122722A1 (en) | 2010-07-07 | 2013-05-16 | Advanced Technology Materials, Inc. | DOPING OF ZrO2 FOR DRAM APPLICATIONS |
US8882923B2 (en) | 2010-07-22 | 2014-11-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20120021252A1 (en) | 2010-07-22 | 2012-01-26 | Synos Technology, Inc. | Treating Surface of Substrate Using Inert Gas Plasma in Atomic Layer Deposition |
US8721791B2 (en) | 2010-07-28 | 2014-05-13 | Applied Materials, Inc. | Showerhead support structure for improved gas flow |
US20120024231A1 (en) | 2010-07-28 | 2012-02-02 | Sumitomo Electric Industries. Ltd. | Semiconductor growing apparatus |
US20120024478A1 (en) | 2010-07-29 | 2012-02-02 | Hermes-Epitek Corporation | Showerhead |
US8722510B2 (en) | 2010-07-29 | 2014-05-13 | Tokyo Electron Limited | Trench-filling method and film-forming system |
US20120024479A1 (en) | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
US8669185B2 (en) | 2010-07-30 | 2014-03-11 | Asm Japan K.K. | Method of tailoring conformality of Si-containing film |
US20120028469A1 (en) | 2010-07-30 | 2012-02-02 | Asm Japan K.K. | METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM |
US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US20120033695A1 (en) | 2010-08-04 | 2012-02-09 | Sanyo Electric Co., Ltd. | Semiconductor laser apparatus and optical apparatus |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US20130084408A1 (en) | 2010-08-06 | 2013-04-04 | Mitsubishi Heavy Industries, Ltd. | Vacuum processing apparatus and plasma processing method |
US20130202387A1 (en) | 2010-08-06 | 2013-08-08 | Tokyo Electron Limited | Substrate processing system, transfer module, substrate processing method, and method for manufacturing semiconductor element |
US20120070136A1 (en) | 2010-08-09 | 2012-03-22 | Applied Materials, Inc. | Transparent Reflector Plate For Rapid Thermal Processing Chamber |
US20120032311A1 (en) | 2010-08-09 | 2012-02-09 | International Business Machines Corporation | Multi component dielectric layer |
US20130152933A1 (en) | 2010-08-10 | 2013-06-20 | The Regents Of The University Of California, A California Corporation | Automated fluid delivery system and method |
US20150259790A1 (en) | 2010-08-11 | 2015-09-17 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
CN102373440A (en) | 2010-08-12 | 2012-03-14 | Snt能源技术有限公司 | Chemical vapor deposition device |
US20120040528A1 (en) | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Methods for patterning microelectronic devices using two sacrificial layers |
US20120040097A1 (en) | 2010-08-13 | 2012-02-16 | Veeco Instruments Inc. | Enhanced wafer carrier |
US20120046421A1 (en) | 2010-08-17 | 2012-02-23 | Uchicago Argonne, Llc | Ordered Nanoscale Domains by Infiltration of Block Copolymers |
USD649986S1 (en) | 2010-08-17 | 2011-12-06 | Ebara Corporation | Sealing ring |
US20120043556A1 (en) | 2010-08-20 | 2012-02-23 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
US20130164458A1 (en) | 2010-08-30 | 2013-06-27 | Beneq Oy | Apparatus and method |
US20120052681A1 (en) | 2010-08-31 | 2012-03-01 | Micron Technology, Inc. | Methods of selectively forming a material |
US8945305B2 (en) | 2010-08-31 | 2015-02-03 | Micron Technology, Inc. | Methods of selectively forming a material using parylene coating |
US20130145984A1 (en) | 2010-08-31 | 2013-06-13 | Chao Zhang | Method of epitaxial growth effectively preventing auto-doping effect |
US8394466B2 (en) | 2010-09-03 | 2013-03-12 | Asm Japan K.K. | Method of forming conformal film having si-N bonds on high-aspect ratio pattern |
CN102383106A (en) | 2010-09-03 | 2012-03-21 | 甘志银 | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
EP2426233A1 (en) | 2010-09-03 | 2012-03-07 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Growth of Al2O3 thin films for photovoltaic applications |
US20120058630A1 (en) | 2010-09-08 | 2012-03-08 | Veeco Instruments Inc. | Linear Cluster Deposition System |
US20120064690A1 (en) | 2010-09-10 | 2012-03-15 | Elpida Memory, Inc. | Method for manufacturing semiconductor device |
US8999102B2 (en) | 2010-09-13 | 2015-04-07 | Tokyo Electron Limited | Substrate processing apparatus |
US8785311B2 (en) | 2010-09-13 | 2014-07-22 | Tokyo Electron Limited | Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor |
US20120064726A1 (en) | 2010-09-15 | 2012-03-15 | Tokyo Electron Limited | Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method |
US20120068242A1 (en) | 2010-09-16 | 2012-03-22 | Seung-Mok Shin | Semiconductor devices and methods of fabricating the same |
US20130216710A1 (en) | 2010-09-21 | 2013-08-22 | Ulvac, Inc. | Thin film forming method and thin film forming apparatus |
US20120077349A1 (en) | 2010-09-23 | 2012-03-29 | Ming Li | Plasma-activated deposition of conformal films |
US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
US20160020092A1 (en) | 2010-09-23 | 2016-01-21 | Lam Research Corporation | Methods for depositing silicon oxide |
TW201213596A (en) | 2010-09-24 | 2012-04-01 | Ferrotec Usa Corp | Hybrid gas injector |
US20120074533A1 (en) | 2010-09-24 | 2012-03-29 | Tokyo Electron (TEL)Limited | Structures And Techniques For Atomic Layer Deposition |
US20120073400A1 (en) | 2010-09-29 | 2012-03-29 | John Wang | Handlebar grip assembly |
US20120083134A1 (en) | 2010-09-30 | 2012-04-05 | Hui-Jung Wu | Method of mitigating substrate damage during deposition processes |
US7994070B1 (en) | 2010-09-30 | 2011-08-09 | Tokyo Electron Limited | Low-temperature dielectric film formation by chemical vapor deposition |
US8076250B1 (en) | 2010-10-06 | 2011-12-13 | Applied Materials, Inc. | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application |
US8465903B2 (en) | 2010-10-06 | 2013-06-18 | Applied Materials, Inc. | Radiation patternable CVD film |
US20120088369A1 (en) | 2010-10-06 | 2012-04-12 | Applied Materials, Inc. | Atomic Layer Deposition Of Photoresist Materials And Hard Mask Precursors |
US8536068B2 (en) | 2010-10-06 | 2013-09-17 | Applied Materials, Inc. | Atomic layer deposition of photoresist materials and hard mask precursors |
US20120088031A1 (en) | 2010-10-08 | 2012-04-12 | Adixen Vacuum Products | Gas discharge pipe and associated method |
US20130168353A1 (en) | 2010-10-08 | 2013-07-04 | Shogo Okita | Plasma processing method for substrates |
US20120094468A1 (en) | 2010-10-15 | 2012-04-19 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US8771791B2 (en) | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
US20120094010A1 (en) | 2010-10-18 | 2012-04-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, temperature controlling method of substrate processing apparatus, and heating method of substrate processing apparatus |
US20120091522A1 (en) | 2010-10-19 | 2012-04-19 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
US8911553B2 (en) | 2010-10-19 | 2014-12-16 | Applied Materials, Inc. | Quartz showerhead for nanocure UV chamber |
US20150279956A1 (en) | 2010-10-19 | 2015-10-01 | Fujitsu Limited | Semiconductor device |
US8192901B2 (en) | 2010-10-21 | 2012-06-05 | Asahi Glass Company, Limited | Glass substrate-holding tool |
US20130209940A1 (en) | 2010-10-21 | 2013-08-15 | Nissan Chemical Industries, Ltd. | Composition for forming resist overlayer film for euv lithography |
USD654882S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
USD654884S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Top plate for reactor for manufacturing semiconductor |
USD655260S1 (en) | 2010-10-21 | 2012-03-06 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
US20120100464A1 (en) | 2010-10-21 | 2012-04-26 | Asahi Glass Company, Limited | Glass substrate-holding tool |
USD655261S1 (en) | 2010-10-21 | 2012-03-06 | Tokyo Electron Limited | Gas-separating plate for reactor for manufacturing semiconductor |
US8845806B2 (en) | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
US20120103939A1 (en) | 2010-10-27 | 2012-05-03 | Applied Materials, Inc. | Methods and apparatus for controlling photoresist line width roughness |
US20120103522A1 (en) | 2010-10-27 | 2012-05-03 | Lam Research Ag | Closed chamber for wafer wet processing |
WO2012056592A1 (en) | 2010-10-28 | 2012-05-03 | 株式会社朝日工業社 | Clean room |
US8945339B2 (en) | 2010-10-29 | 2015-02-03 | Tokyo Electron Limited | Film formation apparatus |
US20120108048A1 (en) | 2010-11-01 | 2012-05-03 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor devices and methods of fabricating the same |
US20120104514A1 (en) | 2010-11-03 | 2012-05-03 | Samsung Electronics Co., Ltd. | Semiconductor Devices and Methods of Manufacturing the Same |
US20120122302A1 (en) | 2010-11-03 | 2012-05-17 | Applied Materials, Inc. | Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films |
US8470187B2 (en) | 2010-11-05 | 2013-06-25 | Asm Japan K.K. | Method of depositing film with tailored comformality |
US20120114877A1 (en) | 2010-11-05 | 2012-05-10 | Synos Technology, Inc. | Radical Reactor with Multiple Plasma Chambers |
US20120119337A1 (en) | 2010-11-11 | 2012-05-17 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device and semiconductor device |
US20120121823A1 (en) | 2010-11-12 | 2012-05-17 | Applied Materials, Inc. | Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
TW201234453A (en) | 2010-11-18 | 2012-08-16 | Tokyo Electron Ltd | Insulating member and substrate processing device containing insulating member |
US20140144500A1 (en) | 2010-11-22 | 2014-05-29 | E I Du Pont De Nemours And Company | Semiconductor inks films, coated substrates and methods of preparation |
US20120126300A1 (en) | 2010-11-23 | 2012-05-24 | Kiyeon Park | Capacitors, semiconductor devices including the same and methods of manufacturing the semiconductor devices |
US20120125258A1 (en) | 2010-11-24 | 2012-05-24 | Synos Technology, Inc. | Extended Reactor Assembly with Multiple Sections for Performing Atomic Layer Deposition on Large Substrate |
US20130309876A1 (en) | 2010-11-29 | 2013-11-21 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus |
US20120139009A1 (en) | 2010-12-02 | 2012-06-07 | International Business Machine Corporation | SOI SiGe-Base Lateral Bipolar Junction Transistor |
US8415587B2 (en) | 2010-12-03 | 2013-04-09 | Uvtech Systems, Inc. | Fiber-optic beam delivery system for wafer edge processing |
US20130333619A1 (en) | 2010-12-09 | 2013-12-19 | Ulvac, Inc. | Organic thin film forming apparatus |
WO2012077590A1 (en) | 2010-12-09 | 2012-06-14 | 株式会社アルバック | Apparatus for forming organic thin film |
US20120149213A1 (en) | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
US20130228902A1 (en) | 2010-12-10 | 2013-09-05 | Teijin Limited | Semiconductor laminate, semiconductor device, and production method thereof |
US20120145078A1 (en) | 2010-12-10 | 2012-06-14 | Industrial Technology Research Institute | Showerhead integrating intake and exhaust |
US20120156890A1 (en) | 2010-12-20 | 2012-06-21 | Applied Materials, Inc. | In-situ low-k capping to improve integration damage resistance |
US20120161405A1 (en) | 2010-12-20 | 2012-06-28 | Mohn Jonathan D | System and apparatus for flowable deposition in semiconductor fabrication |
US20130330165A1 (en) | 2010-12-20 | 2013-12-12 | Ev Group E. Thallner Gmbh | Accommodating device for retaining wafers |
JP2012146939A (en) | 2010-12-21 | 2012-08-02 | Hitachi Kokusai Electric Inc | Substrate processing apparatus, method of manufacturing substrate, and method of manufacturing semiconductor device |
CN102094183A (en) | 2010-12-22 | 2011-06-15 | 中国工程物理研究院激光聚变研究中心 | Cold-wall batch reactor |
US20120164837A1 (en) | 2010-12-23 | 2012-06-28 | Tan Elliot N | Feature size reduction |
US20120164327A1 (en) | 2010-12-27 | 2012-06-28 | Tokyo Electron Limited | Film-forming method and film-forming apparatus for forming silicon oxide film on tungsten film or tungsten oxide film |
US20120164842A1 (en) | 2010-12-27 | 2012-06-28 | Tokyo Electron Limited | Trench embedding method and film-forming apparatus |
US20120161126A1 (en) | 2010-12-28 | 2012-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9780225B2 (en) | 2010-12-28 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20120164846A1 (en) | 2010-12-28 | 2012-06-28 | Asm Japan K.K. | Method of Forming Metal Oxide Hardmask |
US8901016B2 (en) | 2010-12-28 | 2014-12-02 | Asm Japan K.K. | Method of forming metal oxide hardmask |
US9171716B2 (en) | 2010-12-28 | 2015-10-27 | Asm Japan K.K. | Method of forming metal oxide hardmask |
US20120160172A1 (en) | 2010-12-28 | 2012-06-28 | Tokyo Electron Limited | Raw material supplying device and film forming apparatus |
US10428419B2 (en) | 2010-12-28 | 2019-10-01 | Asm Ip Holding B.V. | Combination CVD/ALD method, source and pulse profile modification |
US20120170170A1 (en) | 2010-12-29 | 2012-07-05 | Stmicroelectronics (Crolles 2) Sas | Method for manufacturing a polycrystalline dielectric layer |
USD655599S1 (en) | 2010-12-29 | 2012-03-13 | Bill Durham | Wall or door mountable holder |
US8667654B2 (en) | 2010-12-29 | 2014-03-11 | Stmicroelectronics (Crolles 2) Sas | Method for manufacturing a polycrystalline dielectric layer |
US20120171391A1 (en) | 2010-12-30 | 2012-07-05 | Applied Materials, Inc. | Thin film deposition using microwave plasma |
US20120175518A1 (en) | 2011-01-10 | 2012-07-12 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for monitoring ion mass, energy, and angle in processing systems |
US8980006B2 (en) | 2011-01-11 | 2015-03-17 | Dms Co., Ltd. | Apparatus for chemical vapor deposition |
US20120180719A1 (en) | 2011-01-14 | 2012-07-19 | Tokyo Electron Limited | Film forming apparatus |
US9127358B2 (en) | 2011-01-14 | 2015-09-08 | Tokyo Electron Limited | Film forming apparatus |
US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8967608B2 (en) | 2011-01-18 | 2015-03-03 | Asahi Glass Company, Limited | Glass substrate-holding tool and method for producing an EUV mask blank by employing the same |
US20120187083A1 (en) | 2011-01-20 | 2012-07-26 | Akio Hashizume | Substrate treatment method and substrate treatment apparatus |
US20120186573A1 (en) | 2011-01-21 | 2012-07-26 | Jdira Lucian C | Thermal processing furnace and liner for the same |
US20120187305A1 (en) | 2011-01-21 | 2012-07-26 | Uchicago Argonne Llc | Microchannel plate detector and methods for their fabrication |
US8398773B2 (en) | 2011-01-21 | 2013-03-19 | Asm International N.V. | Thermal processing furnace and liner for the same |
US20120190178A1 (en) | 2011-01-24 | 2012-07-26 | Applied Materials, Inc. | Polysilicon films by hdp-cvd |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8900935B2 (en) | 2011-01-25 | 2014-12-02 | International Business Machines Corporation | Deposition on a nanowire using atomic layer deposition |
US20120187375A1 (en) | 2011-01-25 | 2012-07-26 | International Business Machines Corporation | Deposition On A Nanowire Using Atomic Layer Deposition |
US20120190185A1 (en) | 2011-01-26 | 2012-07-26 | Applied Materials, Inc. | Plasma treatment of silicon nitride and silicon oxynitride |
US20120196242A1 (en) | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
US8465811B2 (en) | 2011-01-28 | 2013-06-18 | Asm Japan K.K. | Method of depositing film by atomic layer deposition with pulse-time-modulated plasma |
US20120196048A1 (en) | 2011-01-28 | 2012-08-02 | Asm Japan K.K. | Method of depositing film by atomic layer deposition with pulse-time-modulated plasma |
JP2012164736A (en) | 2011-02-04 | 2012-08-30 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and semiconductor device manufacturing method |
US20120263876A1 (en) | 2011-02-14 | 2012-10-18 | Asm Ip Holding B.V. | Deposition of silicon dioxide on hydrophobic surfaces |
US20120206033A1 (en) | 2011-02-15 | 2012-08-16 | Tokyo Electron Limited | Upper electrode and plasma processing apparatus |
US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
US20120295449A1 (en) | 2011-02-18 | 2012-11-22 | Asm Japan K.K. | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen |
US20120213947A1 (en) | 2011-02-18 | 2012-08-23 | Synos Technology, Inc. | Depositing thin layer of material on permeable substrate |
US8563443B2 (en) | 2011-02-18 | 2013-10-22 | Asm Japan K.K. | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen |
US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
US20120214318A1 (en) | 2011-02-18 | 2012-08-23 | Asm Japan K.K. | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen |
US8329599B2 (en) | 2011-02-18 | 2012-12-11 | Asm Japan K.K. | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen |
US20120212121A1 (en) | 2011-02-21 | 2012-08-23 | Lin Wen-Fei | Ceramic-glass composite electrode and fluorescent lamp having the same |
US20150247259A1 (en) | 2011-02-23 | 2015-09-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
US20120219735A1 (en) | 2011-02-27 | 2012-08-30 | The Board Of Trustees Of The University Of Alabama | Methods for preparing and using metal and/or metal oxide porous materials |
US20120219824A1 (en) | 2011-02-28 | 2012-08-30 | Uchicago Argonne Llc | Atomic layer deposition of super-conducting niobium silicide |
US20120216743A1 (en) | 2011-02-28 | 2012-08-30 | Hitachi Kokusai Electric Inc. | Attachment for substrates having different diameters, substrate processing apparatus, and method of manufacturing substrate or semiconductor device |
US20120222813A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Vacuum chambers with shared pump |
US20120225192A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus And Process For Atomic Layer Deposition |
US20130340619A1 (en) | 2011-03-01 | 2013-12-26 | Robert F. Tammera | Apparatus and Systems Having a Reciprocating Valve Head Assembly and Swing Adsorption Processes Related Thereto |
US8466411B2 (en) | 2011-03-03 | 2013-06-18 | Asm Japan K.K. | Calibration method of UV sensor for UV curing |
US20120225561A1 (en) | 2011-03-03 | 2012-09-06 | Tokyo Electron Limited | Semiconductor device manufacturing method and computer-readable storage medium |
US20120222815A1 (en) | 2011-03-04 | 2012-09-06 | Mohamed Sabri | Hybrid ceramic showerhead |
US20120232340A1 (en) | 2011-03-07 | 2012-09-13 | Peer Medical Ltd. | Multi camera endoscope having a side service channel |
US20140072710A1 (en) | 2011-03-14 | 2014-03-13 | Petroceramics S.P.A. | Method for the Infiltration of a Porous Material with a Second Material Related Plant |
US20120238074A1 (en) | 2011-03-14 | 2012-09-20 | Applied Materials, Inc. | Methods and apparatus for conformal doping |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20170018570A1 (en) | 2011-03-16 | 2017-01-19 | Macronix International Co., Ltd. | Capacitor With 3D NAND Memory |
JP2012195513A (en) | 2011-03-17 | 2012-10-11 | Tokyo Electron Ltd | Plasma processing apparatus |
US20120240858A1 (en) | 2011-03-22 | 2012-09-27 | Kitz Sct Corporation | Substrate processing apparatus and solid raw material replenishing method |
US20170343896A1 (en) | 2011-03-24 | 2017-11-30 | Uchicago Argonne, Llc | Sequential infiltration synthesis for enhancing multiple-patterning lithography |
US9684234B2 (en) | 2011-03-24 | 2017-06-20 | Uchicago Argonne, Llc | Sequential infiltration synthesis for enhancing multiple-patterning lithography |
US20120241411A1 (en) | 2011-03-24 | 2012-09-27 | Uchicago Argonne Llc | Sequential infiltration synthesis for advanced lithography |
US20130256265A1 (en) | 2011-03-24 | 2013-10-03 | Uchicago Argonne Llc | Sequential Infiltration Synthesis for Enhancing Multiple-Patterning Lithography |
US20120241089A1 (en) | 2011-03-25 | 2012-09-27 | Applied Materials, Inc. | Method and apparatus for thermocouple installation or replacement in a substrate support |
US20140015108A1 (en) | 2011-03-28 | 2014-01-16 | Sang-hee Kim | Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby |
US20140014644A1 (en) | 2011-03-28 | 2014-01-16 | Tokyo Electron Limited | Heating Device |
US20120247386A1 (en) | 2011-03-28 | 2012-10-04 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
KR20120111060A (en) | 2011-03-31 | 2012-10-10 | 최대규 | Plasma reactor having hot baffle and wafer handle method thereof |
US20140179091A1 (en) | 2011-03-31 | 2014-06-26 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
US20140020619A1 (en) | 2011-03-31 | 2014-01-23 | Benjamin Vincent | Method for Growing a Monocrystalline Tin-Containing Semiconductor Material |
US8697198B2 (en) | 2011-03-31 | 2014-04-15 | Veeco Ald Inc. | Magnetic field assisted deposition |
US20140024223A1 (en) | 2011-04-07 | 2014-01-23 | Picosun Oy | Atomic Layer Deposition with Plasma Source |
US9868131B2 (en) | 2011-04-07 | 2018-01-16 | Picosun Oy | Atomic layer deposition with plasma source |
US9095869B2 (en) | 2011-04-07 | 2015-08-04 | Picosun Oy | Atomic layer deposition with plasma source |
US20150322569A1 (en) | 2011-04-07 | 2015-11-12 | Picosun Oy | Atomic Layer Deposition with Plasma Source |
US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
US20120263887A1 (en) | 2011-04-13 | 2012-10-18 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for ion-assisted atomic layer deposition |
US20120264305A1 (en) | 2011-04-13 | 2012-10-18 | Asm Japan K.K. | Footing Reduction Using Etch-Selective Layer |
US20120264051A1 (en) | 2011-04-13 | 2012-10-18 | Novellus Systems, Inc. | Pedestal covers |
US8298951B1 (en) | 2011-04-13 | 2012-10-30 | Asm Japan K.K. | Footing reduction using etch-selective layer |
US20140056679A1 (en) | 2011-04-15 | 2014-02-27 | Tazmo Co., Ltd. | Wafer exchange apparatus and wafer supporting hand |
US20120263875A1 (en) | 2011-04-18 | 2012-10-18 | Siltronic Ag | Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer |
US20120270407A1 (en) | 2011-04-19 | 2012-10-25 | Siltronic Ag | Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer |
US20120289056A1 (en) | 2011-04-20 | 2012-11-15 | Applied Materials, Inc. | Selective silicon nitride etch |
US20120302055A1 (en) | 2011-04-22 | 2012-11-29 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
US20120270384A1 (en) | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
US20120269967A1 (en) | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use |
US20120270339A1 (en) | 2011-04-25 | 2012-10-25 | Applied Materials, Inc. | Uv assisted silylation for recovery and pore sealing of damaged low k films |
US20120267048A1 (en) | 2011-04-25 | 2012-10-25 | Tokyo Electron Limited | Plasma processing apparatus |
US8492170B2 (en) | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
US20120276306A1 (en) | 2011-04-26 | 2012-11-01 | Asm Japan K.K. | Atomic Layer Deposition For Controlling Vertical Film Growth |
US8592005B2 (en) | 2011-04-26 | 2013-11-26 | Asm Japan K.K. | Atomic layer deposition for controlling vertical film growth |
USD655055S1 (en) | 2011-04-28 | 2012-02-28 | Carolyn Grace Toll | Pet outfit |
US20120273162A1 (en) | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Methods of cooling process chamber components |
US9076635B2 (en) | 2011-04-29 | 2015-07-07 | Von Ardenne Anlagentechnik Gmbh | Substrate treatment installation |
US20120273052A1 (en) | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Method and apparatus for gas delivery |
US20120289053A1 (en) | 2011-05-10 | 2012-11-15 | Lam Research Corporation | Semiconductor Processing System Having Multiple Decoupled Plasma Sources |
US20120288625A1 (en) | 2011-05-10 | 2012-11-15 | Tokyo Electron Limited | Gas supply apparatus, thermal treatment apparatus, gas supply method, and thermal treatment method |
US20120289057A1 (en) | 2011-05-11 | 2012-11-15 | Intermolecular, Inc. | Apparatus and method for multiple symmetrical divisional gas distribution |
US20120295427A1 (en) | 2011-05-19 | 2012-11-22 | Asm America, Inc. | High throughput cyclical epitaxial deposition and etch process |
US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
US20140045324A1 (en) | 2011-05-19 | 2014-02-13 | Matheson Tri-Gas, Inc. | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor |
US20140272194A1 (en) | 2011-05-24 | 2014-09-18 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
TW201247690A (en) | 2011-05-24 | 2012-12-01 | Air Prod & Chem | Organoaminosilane precursors and methods for making and using same |
US20120303313A1 (en) | 2011-05-26 | 2012-11-29 | Tokyo Electron Limited | Temperature measurement apparatus, method of measuring temperature profile, recording medium and heat treatment apparatus |
US20140141165A1 (en) | 2011-05-27 | 2014-05-22 | Hiroki Sato | Method for manufacturing molybdenum oxide-containing thin film, starting material for forming molybdenum oxide-containing thin film, and molybdenum amide compound |
US20120304935A1 (en) | 2011-05-31 | 2012-12-06 | Oosterlaken Theodorus G M | Bubbler assembly and method for vapor flow control |
US20120305026A1 (en) | 2011-05-31 | 2012-12-06 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus and Substrate Processing Method |
US20140073082A1 (en) | 2011-05-31 | 2014-03-13 | Semics Inc. | Method of manufacturing light - absorbtion layer of solar cell through selenization process under elemental selenium vapor atmosphere and thermal processing apparatus for manufacturing light - absorbing layer |
US9136180B2 (en) | 2011-06-01 | 2015-09-15 | Asm Ip Holding B.V. | Process for depositing electrode with high effective work function |
US20120309181A1 (en) | 2011-06-01 | 2012-12-06 | Asm International N.V. | Process for depositing electrode with high effective work function |
US20120305987A1 (en) | 2011-06-03 | 2012-12-06 | Infineon Technologies Austria Ag | Lateral trench mesfet |
US20130143401A1 (en) | 2011-06-03 | 2013-06-06 | Jengyi Yu | Metal and silicon containing capping layers for interconnects |
US20140287164A1 (en) | 2011-06-03 | 2014-09-25 | Air Products And Chemicals, Inc. | Compositions and processes for depositing carbon-doped silicon-containing films |
US20120305196A1 (en) | 2011-06-06 | 2012-12-06 | Asm Japan K.K. | High-Throughput Semiconductor-Processing Apparatus Equipped with Multiple Dual-Chamber Modules |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US20160181128A1 (en) | 2011-06-06 | 2016-06-23 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US20120320491A1 (en) | 2011-06-14 | 2012-12-20 | Samsung Mobile Display Co., Ltd. | Electrostatic chuck |
US20120318334A1 (en) | 2011-06-14 | 2012-12-20 | International Business Machines Corporation | Spalling methods to form multi-junction photovoltaic structure |
US20120318773A1 (en) | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control |
US20120319279A1 (en) | 2011-06-16 | 2012-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device and method of producing the same |
US20120321786A1 (en) | 2011-06-17 | 2012-12-20 | Intermolecular, Inc. | System for multi-region processing |
US20120318457A1 (en) | 2011-06-17 | 2012-12-20 | Son Nguyen | Materials and coatings for a showerhead in a processing system |
USD745641S1 (en) | 2011-06-20 | 2015-12-15 | Neoperl Gmbh | Stream straightener for faucet |
US20120325148A1 (en) | 2011-06-22 | 2012-12-27 | Asm Japan K.K. | Method for Positioning Wafers in Multiple Wafer Transport |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US20120328780A1 (en) | 2011-06-27 | 2012-12-27 | Asm Japan K.K. | Dual Section Module Having Shared and Unshared Mass Flow Controllers |
US20130005147A1 (en) | 2011-06-28 | 2013-01-03 | International Business Machines Corporation | Method of reducing critical dimension process bias differences between narrow and wide damascene wires |
US20130002121A1 (en) | 2011-06-28 | 2013-01-03 | Federal-Mogul Ignition Company | Electrode material for a spark plug |
US20140130687A1 (en) | 2011-07-01 | 2014-05-15 | Taiyo Chemical Industry Co., Ltd. | Primer composition, structure including primer layer composed of the composition, and method of producing the structure |
US20140007808A1 (en) | 2011-07-05 | 2014-01-09 | Epicrew Corporation | Susceptor Device And Deposition Apparatus Having The Same |
US20130008607A1 (en) | 2011-07-06 | 2013-01-10 | Tokyo Electron Limited | Antenna, dielectric window, plasma processing apparatus and plasma processing method |
US8846502B2 (en) | 2011-07-06 | 2014-09-30 | Asm Ip Holding B.V. | Methods for depositing thin films comprising gallium nitride by atomic layer deposition |
US20130012003A1 (en) | 2011-07-06 | 2013-01-10 | Suvi Haukka | Methods for depositing thin films comprising gallium nitride by atomic layer deposition |
US20140234550A1 (en) | 2011-07-06 | 2014-08-21 | Wayne State University | Atomic layer deposition of transition metal thin films |
US20130011984A1 (en) | 2011-07-07 | 2013-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy |
US20130011630A1 (en) | 2011-07-07 | 2013-01-10 | Brewer Science Inc. | Metal-oxide films from small molecules for lithographic applications |
US20130011983A1 (en) | 2011-07-07 | 2013-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-Situ Doping of Arsenic for Source and Drain Epitaxy |
US9223203B2 (en) | 2011-07-08 | 2015-12-29 | Asm International N.V. | Microcontact printed films as an activation layer for selective atomic layer deposition |
US20140190581A1 (en) | 2011-07-08 | 2014-07-10 | Fujikin Incorporated | Raw material gas supply apparatus for semiconductor manufacturing equipment |
KR20130007806A (en) | 2011-07-11 | 2013-01-21 | 주식회사 케이씨텍 | Heater module of atomic layer deposition apparatus |
US20130014697A1 (en) | 2011-07-12 | 2013-01-17 | Asm Japan K.K. | Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers |
US20140097468A1 (en) | 2011-07-12 | 2014-04-10 | Panasonic Corporation | Nitride semiconductor device and method for manufacturing same |
US9018567B2 (en) | 2011-07-13 | 2015-04-28 | Asm International N.V. | Wafer processing apparatus with heated, rotating substrate support |
US20130017503A1 (en) | 2011-07-13 | 2013-01-17 | De Ridder Chris G M | Wafer processing apparatus with heated, rotating substrate support |
US20130014896A1 (en) | 2011-07-15 | 2013-01-17 | Asm Japan K.K. | Wafer-Supporting Device and Method for Producing Same |
US20130180448A1 (en) | 2011-07-15 | 2013-07-18 | Tokyo Electron Limited | Substrate transfer device and substrate processing system |
US20130020246A1 (en) | 2011-07-19 | 2013-01-24 | Hayward Industries, Inc. | Filter Vessel Assembly and Related Methods of Use |
US8617411B2 (en) | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
US20130023124A1 (en) | 2011-07-20 | 2013-01-24 | Nemani Srinivas D | Method of patterning a low-k dielectric film |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US20200102649A1 (en) | 2011-07-20 | 2020-04-02 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US20130019944A1 (en) | 2011-07-21 | 2013-01-24 | International Business Machines Corporation | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys |
US20130019945A1 (en) | 2011-07-21 | 2013-01-24 | International Business Machines Corporation | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys |
JP2013026479A (en) | 2011-07-21 | 2013-02-04 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer growth method and atomic layer growth apparatus |
US20130019960A1 (en) | 2011-07-22 | 2013-01-24 | Applied Materials, Inc. | Reactant Delivery System For ALD/CVD Processes |
US20130026451A1 (en) | 2011-07-25 | 2013-01-31 | International Business Machines Corporation | Hybrid CMOS Technology With Nanowire Devices and Double Gated Planar Devices |
US20140174927A1 (en) | 2011-07-27 | 2014-06-26 | Rashid Bashir | Nanopore Sensors for Biomolecular Characterization |
US8551892B2 (en) | 2011-07-27 | 2013-10-08 | Asm Japan K.K. | Method for reducing dielectric constant of film using direct plasma of hydrogen |
US20130025538A1 (en) | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
US20130025786A1 (en) | 2011-07-28 | 2013-01-31 | Vladislav Davidkovich | Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes |
US20140144375A1 (en) | 2011-08-02 | 2014-05-29 | Eugene Technology Co., Ltd. | Equipment for manufacturing semiconductor |
US20140174357A1 (en) | 2011-08-02 | 2014-06-26 | Eugene Technology Co., Ltd. | Equipment for manufacturing semiconductor |
US20130032085A1 (en) | 2011-08-04 | 2013-02-07 | Applied Materials, Inc. | Plasma assisted hvpe chamber design |
US20130037532A1 (en) | 2011-08-08 | 2013-02-14 | Applied Materials, Inc. | Substrate support with heater |
US20130037858A1 (en) | 2011-08-10 | 2013-02-14 | Semiconductor Manufacturing International (Beijing) Corporation | Semiconductor device and manufacturing method thereof |
US20130037886A1 (en) | 2011-08-10 | 2013-02-14 | Teng-Chun Tsai | Semiconductor device and method of making the same |
US20130040481A1 (en) | 2011-08-12 | 2013-02-14 | Genesis Technology Usa, Inc. | U-Channel Coaxial F-Connector |
US20140162401A1 (en) | 2011-08-19 | 2014-06-12 | Tokyo Electron Limited | Ge-Sb-Te FILM FORMING METHOD, Ge-Te FILM FORMING METHOD, AND Sb-Te FILM FORMING METHOD |
US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
US8759223B2 (en) | 2011-08-26 | 2014-06-24 | Applied Materials, Inc. | Double patterning etching process |
US20130052585A1 (en) | 2011-08-26 | 2013-02-28 | Jsr Corporation | Photodecomposable bases and photoresist compositions |
US20130048606A1 (en) | 2011-08-31 | 2013-02-28 | Zhigang Mao | Methods for in-situ chamber dry clean in photomask plasma etching processing chamber |
US20130070456A1 (en) | 2011-09-02 | 2013-03-21 | Chul Ho Jang | Lighting device |
US20130059415A1 (en) | 2011-09-05 | 2013-03-07 | Tokyo Electron Limited | Film deposition apparatus, film deposition method and storage medium |
US20140242808A1 (en) | 2011-09-07 | 2014-08-28 | Tokyo Electron Limited | Semiconductor device manufacturing method and substrate processing system |
US20130062839A1 (en) | 2011-09-09 | 2013-03-14 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US20130064973A1 (en) | 2011-09-09 | 2013-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chamber Conditioning Method |
US20130062753A1 (en) | 2011-09-09 | 2013-03-14 | International Business Machines Corporation | C-rich carbon boron nitride dielectric films for use in electronic devices |
US20130217241A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
US20130217239A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
US20130217240A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-carbon-nitrogen layers for semiconductor processing |
US20130217243A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
US20130065189A1 (en) | 2011-09-13 | 2013-03-14 | Tokyo Electron Limited | Thermal treatment apparatus, temperature control system, thermal treatment method, temperature control method, and non-transitory computer readable medium embodied with program for executing the thermal treatment method or the temperature control method |
US20130068391A1 (en) | 2011-09-15 | 2013-03-21 | Applied Materials, Inc. | Slit valve apparatus, systems, and methods |
US20130069052A1 (en) | 2011-09-16 | 2013-03-21 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
USD697038S1 (en) | 2011-09-20 | 2014-01-07 | Tokyo Electron Limited | Baffle plate |
USD694790S1 (en) | 2011-09-20 | 2013-12-03 | Tokyo Electron Limited | Baffle plate for manufacturing semiconductor |
US20130068970A1 (en) | 2011-09-21 | 2013-03-21 | Asm Japan K.K. | UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations |
US20130075746A1 (en) | 2011-09-23 | 2013-03-28 | Alpha and Omega Semiconductor Inc. | Lateral PNP Bipolar Transistor with Narrow Trench Emitter |
WO2013043330A1 (en) | 2011-09-23 | 2013-03-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8720965B2 (en) | 2011-09-26 | 2014-05-13 | Kabushiki Kaisha Yaskawa Denki | Robot hand and robot |
US20130078392A1 (en) | 2011-09-27 | 2013-03-28 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
US20140234992A1 (en) | 2011-09-27 | 2014-08-21 | Tokyo Electron Limited | Plasma etching method and semiconductor device manufacturing method |
US8993072B2 (en) | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
US20140242298A1 (en) | 2011-09-27 | 2014-08-28 | American Air Liquide, Inc. | Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions |
US20130075788A1 (en) | 2011-09-28 | 2013-03-28 | Fujitsu Limited | Semiconductor device and fabrication method |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US20130081702A1 (en) | 2011-09-29 | 2013-04-04 | Applied Materials, Inc. | Methods for in-situ calibration of a flow controller |
USD709536S1 (en) | 2011-09-30 | 2014-07-22 | Tokyo Electron Limited | Focusing ring |
USD709537S1 (en) | 2011-09-30 | 2014-07-22 | Tokyo Electron Limited | Focusing ring |
US8569184B2 (en) | 2011-09-30 | 2013-10-29 | Asm Japan K.K. | Method for forming single-phase multi-element film by PEALD |
US9190264B2 (en) | 2011-09-30 | 2015-11-17 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of processing substrate and non-transitory computer readable recording medium |
US20130084714A1 (en) | 2011-09-30 | 2013-04-04 | Asm Japan K.K. | Method for Forming Single-Phase Multi-Element Film by PEALD |
US20140245948A1 (en) | 2011-10-03 | 2014-09-04 | Asml Netherlands B.V. | Method to provide a patterned orientation template for a self-assemblable polymer |
US20130084711A1 (en) | 2011-10-04 | 2013-04-04 | Applied Materials, Inc. | Remote plasma burn-in |
US20130085618A1 (en) | 2011-10-04 | 2013-04-04 | Mks Instruments, Inc. | Method of and Apparatus for Multiple Channel Flow Ratio Controller System |
US9741546B2 (en) | 2011-10-05 | 2017-08-22 | Applied Materials, Inc. | Symmetric plasma process chamber |
US20130089667A1 (en) | 2011-10-06 | 2013-04-11 | Industrial Technology Research Institute | Evaporation apparatus and method of forming organic film |
US9653267B2 (en) | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
US20130089988A1 (en) | 2011-10-07 | 2013-04-11 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US20140262034A1 (en) | 2011-10-07 | 2014-09-18 | Tokyo Electron Limited | Plasma processing apparatus |
US20130089716A1 (en) | 2011-10-10 | 2013-04-11 | Brewer Science Inc. | Spin-on carbon compositions for lithographic processing |
US20130095664A1 (en) | 2011-10-12 | 2013-04-18 | ASM International. N.V. | Atomic layer deposition of antimony oxide films |
US20130095973A1 (en) | 2011-10-12 | 2013-04-18 | Ferrotec (Usa) Corporation | Non-contact magnetic drive assembly with mechanical stop elements |
US8637384B2 (en) | 2011-10-13 | 2014-01-28 | International Business Machines Corporation | FinFET parasitic capacitance reduction using air gap |
US9691668B2 (en) | 2011-10-14 | 2017-06-27 | Epistar Corporation | Wafer carrier |
US20130093048A1 (en) | 2011-10-17 | 2013-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposited Material and Method of Formation |
US20130092085A1 (en) | 2011-10-17 | 2013-04-18 | Synos Technology, Inc. | Linear atomic layer deposition apparatus |
USRE47440E1 (en) | 2011-10-19 | 2019-06-18 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
USD695240S1 (en) | 2011-10-20 | 2013-12-10 | Tokyo Electron Limited | Arm for wafer transportation for manufacturing semiconductor |
US20130099318A1 (en) | 2011-10-25 | 2013-04-25 | International Business Machines Corporation | Thin semiconductor-on-insulator mosfet with co-integrated silicon, silicon germanium and silicon doped with carbon channels |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US20130104988A1 (en) | 2011-10-27 | 2013-05-02 | Asm America, Inc. | Heater jacket for a fluid line |
US20130104992A1 (en) | 2011-10-27 | 2013-05-02 | Asm America, Inc. | Deposition valve assembly and method of heating the same |
US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
US20150187568A1 (en) | 2011-10-28 | 2015-07-02 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9892908B2 (en) | 2011-10-28 | 2018-02-13 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US20130109172A1 (en) | 2011-10-28 | 2013-05-02 | Joshua Collins | High temperature tungsten metallization process |
US20180130652A1 (en) | 2011-10-28 | 2018-05-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
US9574268B1 (en) | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
US20130109192A1 (en) | 2011-10-28 | 2013-05-02 | Asm America, Inc. | Susceptor with ring to limit backside deposition |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9368352B2 (en) | 2011-11-04 | 2016-06-14 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US20160196970A1 (en) | 2011-11-04 | 2016-07-07 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US20130112251A1 (en) | 2011-11-04 | 2013-05-09 | E I Du Pont De Nemours And Company | Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate |
US20170338111A1 (en) | 2011-11-04 | 2017-11-23 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US20150147875A1 (en) | 2011-11-04 | 2015-05-28 | ASM International.N.V. | Methods for forming doped silicon oxide thin films |
US10147600B2 (en) | 2011-11-04 | 2018-12-04 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US9564314B2 (en) | 2011-11-04 | 2017-02-07 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US9153441B2 (en) | 2011-11-04 | 2015-10-06 | Asm International, N.V. | Methods for forming doped silicon oxide thin films |
US20180211834A1 (en) | 2011-11-04 | 2018-07-26 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US20130113085A1 (en) | 2011-11-04 | 2013-05-09 | Applied Materials, Inc. | Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium |
US20130115763A1 (en) | 2011-11-04 | 2013-05-09 | ASM International. N.V. | Methods for forming doped silicon oxide thin films |
US20150017794A1 (en) | 2011-11-04 | 2015-01-15 | ASM International. N.V. | Methods for forming doped silicon oxide thin films |
US8679958B2 (en) | 2011-11-04 | 2014-03-25 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US9875893B2 (en) | 2011-11-04 | 2018-01-23 | Asm International N.V. | Methods for forming doped silicon oxide thin films |
US20130115383A1 (en) | 2011-11-08 | 2013-05-09 | Xinliang Lu | Deposition of metal films using alane-based precursors |
US20130118405A1 (en) | 2011-11-10 | 2013-05-16 | Henry Ho | Fluid cooled showerhead with post injection mixing |
US20140312767A1 (en) | 2011-11-11 | 2014-10-23 | Tokyo Electron Limited | Dielectric window for plasma treatment device, and plasma treatment device |
US20130122712A1 (en) | 2011-11-14 | 2013-05-16 | Jong Mun Kim | Method of etching high aspect ratio features in a dielectric layer |
US20130119018A1 (en) | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
US20150099123A1 (en) | 2011-11-17 | 2015-04-09 | United Protective Technologies | Carbon based coatings and methods of producing the same |
US8968989B2 (en) | 2011-11-21 | 2015-03-03 | Brewer Science Inc. | Assist layers for EUV lithography |
US20140256160A1 (en) | 2011-11-21 | 2014-09-11 | Hitachi Kokusai Electric Inc. | Apparatus for Manufacturing Semiconductor Device, Method of Manufacturing Semiconductor Device, and Recording Medium |
US20130130490A1 (en) | 2011-11-22 | 2013-05-23 | Intermolecular, Inc. | Combinatorial approach for screening of ald film stacks |
US20150167159A1 (en) | 2011-11-23 | 2015-06-18 | Asm Ip Holding B.V. | Chamber sealing member |
WO2013078065A1 (en) | 2011-11-23 | 2013-05-30 | Asm Ip Holding B.V. | Chamber sealing member |
US20130126515A1 (en) | 2011-11-23 | 2013-05-23 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
WO2013078066A1 (en) | 2011-11-23 | 2013-05-30 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US20130129577A1 (en) | 2011-11-23 | 2013-05-23 | ASM Holding B.V. | Chamber sealing member |
US20130134148A1 (en) | 2011-11-25 | 2013-05-30 | Nhk Spring Co., Ltd. | Substrate support device |
US8710580B2 (en) | 2011-11-29 | 2014-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20130137279A1 (en) | 2011-11-29 | 2013-05-30 | Hitachi Kokusai Electric Inc. | Exhaust Unit, Substrate Processing Apparatus, and Method of Manufacturing Semiconductor Device |
US8633115B2 (en) | 2011-11-30 | 2014-01-21 | Applied Materials, Inc. | Methods for atomic layer etching |
US20130143415A1 (en) | 2011-12-01 | 2013-06-06 | Applied Materials, Inc. | Multi-Component Film Deposition |
US20140306250A1 (en) | 2011-12-01 | 2014-10-16 | Quarkstar Llc | Solid-state lighting device and method of manufacturing same |
US20130162142A1 (en) | 2011-12-05 | 2013-06-27 | Tocalo Co., Ltd. | Plasma processing apparatus and method |
US20140057187A1 (en) | 2011-12-07 | 2014-02-27 | Panasonic Corporation | Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system |
US20130145587A1 (en) | 2011-12-07 | 2013-06-13 | Intermolecular, Inc. | Vertically retractable flow cell system |
US20130149874A1 (en) | 2011-12-09 | 2013-06-13 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium |
USD712359S1 (en) | 2011-12-09 | 2014-09-02 | Hunter Pacific International Pty Ltd | Electrical connector |
US20130196502A1 (en) | 2011-12-09 | 2013-08-01 | ASM International. N.V. | Selective formation of metallic films on metallic surfaces |
USD712358S1 (en) | 2011-12-09 | 2014-09-02 | Hunter Pacific International Pty Ltd | Electrical connector |
US20140339981A1 (en) | 2011-12-12 | 2014-11-20 | Tokyo Electron Limited | Antenna for plasma generation, plasma processing apparatus and plasma processing method |
US20130147050A1 (en) | 2011-12-12 | 2013-06-13 | Advanced Cooling Technologies, Inc. | Semiconductor having integrally-formed enhanced thermal management |
KR101347962B1 (en) | 2011-12-13 | 2014-01-08 | 주식회사 케이씨텍 | Atomic layer deposition method of improving film properties |
KR20130067600A (en) | 2011-12-14 | 2013-06-25 | 주식회사 케이씨텍 | Atomic layer deposition apparatus providing direct palsma |
US20130270676A1 (en) | 2011-12-14 | 2013-10-17 | Nick Lindert | Metal-insulator-metal (mim) capacitor with insulator stack having a plurality of metal oxide layers |
US20130157521A1 (en) | 2011-12-14 | 2013-06-20 | Alvah Benjamin Aldrich | Lockout tagout plug sleeve |
US20130157409A1 (en) | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
US20140349068A1 (en) | 2011-12-16 | 2014-11-27 | Element Six Technologies Limited | Large area optical quality synthetic polycrystalline diaond window |
US20130285155A1 (en) | 2011-12-20 | 2013-10-31 | Glenn A. Glass | Iii-v layers for n-type and p-type mos source-drain contacts |
USD691974S1 (en) | 2011-12-22 | 2013-10-22 | Tokyo Electron Limited | Holding pad for transferring a wafer |
US20140225065A1 (en) | 2011-12-23 | 2014-08-14 | Willy Rachmady | Non-planar gate all-around device and method of fabrication thereof |
US9023738B2 (en) | 2011-12-27 | 2015-05-05 | Tokyo Electron Limited | Film deposition method |
US9970112B2 (en) | 2011-12-27 | 2018-05-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
US20130161629A1 (en) | 2011-12-27 | 2013-06-27 | Applied Materials, Inc. | Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application |
US20130160709A1 (en) | 2011-12-27 | 2013-06-27 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
US20130168354A1 (en) | 2011-12-28 | 2013-07-04 | Keren Jacobs Kanarik | Mixed mode pulsing etching in plasma processing systems |
US20130171818A1 (en) | 2011-12-29 | 2013-07-04 | Samsung Electronics Co., Ltd. | Method of Manufacturing A Semiconductor Device |
US20140367642A1 (en) | 2012-01-03 | 2014-12-18 | Xidian University | Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing |
CN102539019A (en) | 2012-01-05 | 2012-07-04 | 北京东方计量测试研究所 | Temperature measurement and calibration platform in space vacuum environment |
TW201330086A (en) | 2012-01-05 | 2013-07-16 | Duan-Ren Yu | Etching apparatus |
US20130175596A1 (en) | 2012-01-06 | 2013-07-11 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
US20130177706A1 (en) | 2012-01-09 | 2013-07-11 | Sanjeev Baluja | Method for seasoning uv chamber optical components to avoid degradation |
USD676943S1 (en) | 2012-01-11 | 2013-02-26 | Bill Kluss | Pipe end cap |
US20130183814A1 (en) | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Method of depositing a silicon germanium tin layer on a substrate |
US20140030447A1 (en) | 2012-01-17 | 2014-01-30 | Synos Technology, Inc. | Deposition of Graphene or Conjugated Carbons Using Radical Reactor |
US20160085003A1 (en) | 2012-01-19 | 2016-03-24 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
US20130189854A1 (en) | 2012-01-20 | 2013-07-25 | Dennis Hausmann | Method for depositing a chlorine-free conformal sin film |
USD665055S1 (en) | 2012-01-24 | 2012-08-07 | Asm Ip Holding B.V. | Shower plate |
US20130186340A1 (en) | 2012-01-25 | 2013-07-25 | Ulvac, Inc. | Vacuum Film Forming Apparatus |
US20130189635A1 (en) | 2012-01-25 | 2013-07-25 | First Solar, Inc. | Method and apparatus providing separate modules for processing a substrate |
US20130206066A1 (en) | 2012-01-26 | 2013-08-15 | Samsung Electronics Co., Ltd. | Thin film deposition apparatus |
US20130200518A1 (en) | 2012-01-26 | 2013-08-08 | Khaled Z. Ahmed | Devices Including Metal-Silicon Contacts Using Indium Arsenide Films and Apparatus and Methods |
US8820809B2 (en) | 2012-01-26 | 2014-09-02 | Kabushiki Kaisha Yaskawa Denki | Robot hand and robot |
US20130196507A1 (en) | 2012-01-31 | 2013-08-01 | Paul F. Ma | Method Of Depositing Metals Using High Frequency Plasma |
US20130203266A1 (en) | 2012-02-02 | 2013-08-08 | Globalfoundries Inc. | Methods of Forming Metal Nitride Materials |
US8784676B2 (en) | 2012-02-03 | 2014-07-22 | Lam Research Corporation | Waferless auto conditioning |
US20130203258A1 (en) | 2012-02-05 | 2013-08-08 | Tokyo Electron Limited | Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof |
US20130203267A1 (en) | 2012-02-06 | 2013-08-08 | Asm Ip Holding B.V. | Multiple vapor sources for vapor deposition |
USD698904S1 (en) | 2012-02-08 | 2014-02-04 | Asm Ip Holding B.V. | Vacuum flange ring |
US20130210241A1 (en) | 2012-02-14 | 2013-08-15 | Novellus Systems Inc. | Precursors for Plasma Activated Conformal Film Deposition |
US9418885B2 (en) | 2012-02-16 | 2016-08-16 | Lg Innotek Co., Ltd. | Semiconductor manufacturing apparatus |
US20130213300A1 (en) | 2012-02-16 | 2013-08-22 | Ki Bum SUNG | Semiconductor manufacturing apparatus |
US20150004318A1 (en) | 2012-02-17 | 2015-01-01 | Beneq Oy | Nozzle and nozzle head |
US20130214232A1 (en) | 2012-02-17 | 2013-08-22 | Intermolecular, Inc. | Nonvolatile memory device using a varistor as a current limiter element |
US20140363980A1 (en) | 2012-02-17 | 2014-12-11 | Tokyo Electron Limited | Semiconductor device manufacturing method |
US8932802B2 (en) | 2012-02-21 | 2015-01-13 | Applied Materials, Inc. | Atomic layer deposition lithography |
US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
US20130219853A1 (en) | 2012-02-29 | 2013-08-29 | David A. Little | Mid-section of a can-annular gas turbine engine with an improved rotation of air flow from the compressor to the turbine |
US20130220550A1 (en) | 2012-02-29 | 2013-08-29 | Semes Co., Ltd. | Plasma boundary limiter unit and apparatus for treating substrate |
US20130228225A1 (en) | 2012-03-01 | 2013-09-05 | Novellus Systems, Inc. | Sequential cascading of reaction volumes as a chemical reuse strategy |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US20130230814A1 (en) | 2012-03-02 | 2013-09-05 | Asm Ip Holding B.V. | Susceptor heater shim |
US20130230987A1 (en) | 2012-03-05 | 2013-09-05 | Nerissa Draeger | Flowable oxide film with tunable wet etch rate |
US20130247937A1 (en) | 2012-03-05 | 2013-09-26 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and its maintenance method, substrate transfer method and program |
US20130234203A1 (en) | 2012-03-08 | 2013-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices and Methods of Manufacture Thereof |
US20150014823A1 (en) | 2012-03-09 | 2015-01-15 | Air Products And Chemicals, Inc. | Compositions and methods for making silicon containing films |
US20150021599A1 (en) | 2012-03-09 | 2015-01-22 | Air Products And Chemicals, Inc. | Barrier materials for display devices |
US20150031218A1 (en) | 2012-03-15 | 2015-01-29 | Tokyo Electron Limited | Film forming process and film forming apparatus |
US8912101B2 (en) | 2012-03-15 | 2014-12-16 | Asm Ip Holding B.V. | Method for forming Si-containing film using two precursors by ALD |
US20130242287A1 (en) | 2012-03-15 | 2013-09-19 | Applied Materials, Inc. | Process and Apparatus for Measuring the Crystal Fraction of Crystalline Silicon Casted Mono Wafers |
JP2013196822A (en) | 2012-03-16 | 2013-09-30 | Mitsui Eng & Shipbuild Co Ltd | Plasma generation method, thin-film formation method using the same, and plasma generation device |
USD715410S1 (en) | 2012-03-21 | 2014-10-14 | Blucher Metal A/S | Roof drain |
US9057388B2 (en) | 2012-03-21 | 2015-06-16 | International Business Machines Corporation | Vacuum trap |
US20150307989A1 (en) | 2012-03-23 | 2015-10-29 | Picosun Oy | Atomic layer deposition method and apparatuses |
US20130256962A1 (en) | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
US20130256838A1 (en) | 2012-04-02 | 2013-10-03 | Errol Antonio C. Sanchez | Method of epitaxial doped germanium tin alloy formation |
US20130260371A1 (en) | 2012-04-02 | 2013-10-03 | Lux Bio Group, Inc. | Apparatus and method for molecular separation, purification, and sensing |
US20150147877A1 (en) | 2012-04-04 | 2015-05-28 | Asm Ip Holding B.V. | Metal oxide protective layer for a semiconductor device |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9384987B2 (en) | 2012-04-04 | 2016-07-05 | Asm Ip Holding B.V. | Metal oxide protective layer for a semiconductor device |
US20130264659A1 (en) | 2012-04-04 | 2013-10-10 | Asm Ip Holdings B.V. | Metal Oxide Protective Layer for a Semiconductor Device |
US20130267045A1 (en) | 2012-04-04 | 2013-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shower head apparatus and method for controllign plasma or gas distribution |
US20150091134A1 (en) | 2012-04-05 | 2015-04-02 | Dyson Technology Limited | Atomic layer deposition |
US20130295779A1 (en) | 2012-04-12 | 2013-11-07 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
US20150069354A1 (en) | 2012-04-13 | 2015-03-12 | Oti Lumionics Inc. | Functionalization of a substrate |
US20130270600A1 (en) | 2012-04-13 | 2013-10-17 | Michael Helander | Functionalization of a Substrate |
US20130269609A1 (en) | 2012-04-13 | 2013-10-17 | Novellus Systems, Inc. | Carousel reactor for multi-station, sequential processing systems |
US20130269612A1 (en) | 2012-04-16 | 2013-10-17 | Hermes-Epitek Corporation | Gas Treatment Apparatus with Surrounding Spray Curtains |
US20130273330A1 (en) | 2012-04-16 | 2013-10-17 | Brewer Science Inc. | Silicon hardmask layer for directed self-assembly |
US8535767B1 (en) | 2012-04-18 | 2013-09-17 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation |
US20170062258A1 (en) | 2012-04-19 | 2017-03-02 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
US20130276978A1 (en) | 2012-04-19 | 2013-10-24 | Intevac, Inc. | Dual-mask arrangement for solar cell fabrication |
US20130280891A1 (en) | 2012-04-20 | 2013-10-24 | Yihwan Kim | Method and apparatus for germanium tin alloy formation by thermal cvd |
US8937800B2 (en) | 2012-04-24 | 2015-01-20 | Applied Materials, Inc. | Electrostatic chuck with advanced RF and temperature uniformity |
US20130288427A1 (en) | 2012-04-25 | 2013-10-31 | Steven Hung | Methods Of Fabricating Dielectric Films From Metal Amidinate Precursors |
US20130288471A1 (en) | 2012-04-25 | 2013-10-31 | Globalfoundries Inc. | Methods of forming self-aligned contacts for a semiconductor device |
US20130287526A1 (en) | 2012-04-26 | 2013-10-31 | Intevac, Inc. | System architecture for vacuum processing |
US8647439B2 (en) | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
US20150170947A1 (en) | 2012-04-26 | 2015-06-18 | Intevac, Inc. | System and method for bi-facial processing of substrates |
US20130288480A1 (en) | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
US20130292676A1 (en) | 2012-05-02 | 2013-11-07 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US20140159170A1 (en) | 2012-05-07 | 2014-06-12 | Asm Ip Holding B.V. | Semiconductor device dielectric interface layer |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US9177784B2 (en) | 2012-05-07 | 2015-11-03 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US20130292807A1 (en) | 2012-05-07 | 2013-11-07 | Asm Ip Holdings B.V. | Semiconductor Device Dielectric Interface Layer |
JP2013235912A (en) | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | Method for etching substrate to be processed and plasma etching device |
US20130302999A1 (en) | 2012-05-10 | 2013-11-14 | Tae Kyung Won | Siox process chemistry development using microwave plasma cvd |
US20130302520A1 (en) | 2012-05-11 | 2013-11-14 | Kai-An Wang | Co-evaporation system comprising vapor pre-mixer |
US20130299944A1 (en) | 2012-05-14 | 2013-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Bipolar Junction Transistors and Resistors |
KR20130129149A (en) | 2012-05-18 | 2013-11-27 | 노벨러스 시스템즈, 인코포레이티드 | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US20130312663A1 (en) | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
US20130313656A1 (en) | 2012-05-24 | 2013-11-28 | Intermolecular, Inc. | Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics |
WO2013177269A2 (en) | 2012-05-25 | 2013-11-28 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Zirconium-containing precursors for vapor deposition |
US20150064923A1 (en) | 2012-05-25 | 2015-03-05 | Tokyo Electron Limited | Plasma processing device and plasma processing method |
US20130320429A1 (en) | 2012-05-31 | 2013-12-05 | Asm Ip Holding B.V. | Processes and structures for dopant profile control in epitaxial trench fill |
US8785215B2 (en) | 2012-05-31 | 2014-07-22 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by cyclic processes |
US20130337583A1 (en) | 2012-05-31 | 2013-12-19 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by cyclic processes |
US20130319290A1 (en) | 2012-06-01 | 2013-12-05 | Air Products And Chemicals, Inc. | Organoaminodisilane precursors and methods for depositing films comprising same |
US20130323435A1 (en) | 2012-06-01 | 2013-12-05 | Air Products And Chemicals, Inc. | Organoaminodisilane precursors and methods for depositing films comprising same |
US20130323859A1 (en) | 2012-06-01 | 2013-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of monitoring and controlling atomic layer deposition of tungsten |
US20130323935A1 (en) | 2012-06-02 | 2013-12-05 | Tokyo Electron Limited | Film forming method and apparatus |
US20150167161A1 (en) | 2012-06-07 | 2015-06-18 | Soitec | Gas injection components for deposition systems and related methods |
US20150099065A1 (en) | 2012-06-07 | 2015-04-09 | Soitec | Gas injection components for deposition systems, deposition systems including such components, and related methods |
US20130330911A1 (en) | 2012-06-08 | 2013-12-12 | Yi-Chiau Huang | Method of semiconductor film stabilization |
US20130330933A1 (en) | 2012-06-11 | 2013-12-12 | Asm Ip Holding B.V. | Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control |
USD723330S1 (en) | 2012-06-11 | 2015-03-03 | Barry Dean York | Debris mask and basin |
US8722546B2 (en) | 2012-06-11 | 2014-05-13 | Asm Ip Holding B.V. | Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control |
US20150303056A1 (en) | 2012-06-12 | 2015-10-22 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US20140014642A1 (en) | 2012-06-12 | 2014-01-16 | Component Re-Engineering Company, Inc. | Multiple Zone Heater |
US20130337639A1 (en) | 2012-06-13 | 2013-12-19 | Ostendo Technologies, Inc. | Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy |
US20150167165A1 (en) | 2012-06-15 | 2015-06-18 | Picosun Oy | Coating a substrate web by atomic layer deposition |
US20130337653A1 (en) | 2012-06-15 | 2013-12-19 | Asm Ip Holding B.V. | Semiconductor processing apparatus with compact free radical source |
US20150152553A1 (en) | 2012-06-19 | 2015-06-04 | Osram Oled Gmbh | ALD Coating System |
US20130337172A1 (en) | 2012-06-19 | 2013-12-19 | Synos Technology, Inc. | Reactor in deposition device with multi-staged purging structure |
US20130344248A1 (en) | 2012-06-22 | 2013-12-26 | Tokyo Electron Limited | Method for depositing dielectric films |
US20150340609A1 (en) | 2012-06-22 | 2015-11-26 | Nec Corporation | Switching element and method for manufacturing switching element |
US20130340678A1 (en) | 2012-06-25 | 2013-12-26 | Tokyo Electron Limited | Gas supply apparatus and film forming apparatus |
CN103515222A (en) | 2012-06-25 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Top metal-layer groove etching method |
US9299595B2 (en) | 2012-06-27 | 2016-03-29 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US20150096973A1 (en) | 2012-06-27 | 2015-04-09 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US20140000843A1 (en) | 2012-06-27 | 2014-01-02 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US20140004274A1 (en) | 2012-06-29 | 2014-01-02 | David Thompson | Deposition Of Films Containing Alkaline Earth Metals |
US20140001520A1 (en) | 2012-06-29 | 2014-01-02 | Glenn A. Glass | Contact resistance reduced p-mos transistors employing ge-rich contact layer |
USD705762S1 (en) | 2012-07-04 | 2014-05-27 | Sercomm Corporation | Communication device having multi-module assembly |
US20140017408A1 (en) | 2012-07-06 | 2014-01-16 | Srinivas Gandikota | Deposition Of N-Metal Films Comprising Aluminum Alloys |
US20140017908A1 (en) | 2012-07-11 | 2014-01-16 | Asm Ip Holding B.V. | Method for Forming Conformal, Homogeneous Dielectric Film by Cyclic Deposition and Heat Treatment |
US9023737B2 (en) | 2012-07-11 | 2015-05-05 | Asm Ip Holding B.V. | Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment |
US20140015186A1 (en) | 2012-07-12 | 2014-01-16 | Wolf Robotics, Llc | Configurable welding table and force indicating clamp |
US20150167162A1 (en) | 2012-07-13 | 2015-06-18 | Gallium Enterprises Pty Ltd | Apparatus and method for film formation |
US8784950B2 (en) | 2012-07-16 | 2014-07-22 | Asm Ip Holding B.V. | Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group |
US20140017414A1 (en) | 2012-07-16 | 2014-01-16 | Asm Ip Holding B.V. | Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group |
US20140020764A1 (en) | 2012-07-18 | 2014-01-23 | Rohm And Haas Electronic Materials Llc | Vapor Delivery Device, Methods of Manufacture And Methods of Use Thereof |
US20140020839A1 (en) | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with symmetrical rf feed |
US20140265832A1 (en) | 2012-07-20 | 2014-09-18 | Applied Materials, Inc. | Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding |
US20150004317A1 (en) | 2012-07-20 | 2015-01-01 | American Air Liquide, Inc. | Organosilane precursors for ald/cvd silicon-containing film applications |
US20140023794A1 (en) | 2012-07-23 | 2014-01-23 | Maitreyee Mahajani | Method And Apparatus For Low Temperature ALD Deposition |
US20150211124A1 (en) | 2012-07-25 | 2015-07-30 | Tokyo Electron Limited | Film forming apparatus |
US9905492B2 (en) | 2012-07-27 | 2018-02-27 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US20140027884A1 (en) | 2012-07-27 | 2014-01-30 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US20170117202A1 (en) | 2012-07-27 | 2017-04-27 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
US9911676B2 (en) | 2012-07-27 | 2018-03-06 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
US20170117203A1 (en) | 2012-07-27 | 2017-04-27 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US20140036274A1 (en) | 2012-07-31 | 2014-02-06 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US20140034240A1 (en) | 2012-07-31 | 2014-02-06 | Semes Co., Ltd. | Apparatus for treating substrate |
US20140034632A1 (en) | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
US20140033978A1 (en) | 2012-08-02 | 2014-02-06 | Asm Ip Holding B.V. | Method of Parallel Shift Operation of Multiple Reactors |
US8911826B2 (en) | 2012-08-02 | 2014-12-16 | Asm Ip Holding B.V. | Method of parallel shift operation of multiple reactors |
TWM446412U (en) | 2012-08-06 | 2013-02-01 | Boogang Semiconductor Co Ltd | Exhaust ring easy for clean |
US20180246101A1 (en) | 2012-08-07 | 2018-08-30 | Massachusetts Institute Of Technology | Anti-dengue virus antibodies and uses thereof |
US9514932B2 (en) | 2012-08-08 | 2016-12-06 | Applied Materials, Inc. | Flowable carbon for semiconductor processing |
US20140045342A1 (en) | 2012-08-08 | 2014-02-13 | Applied Materials | Flowable carbon for semiconductor processing |
US8664627B1 (en) | 2012-08-08 | 2014-03-04 | Asm Ip Holding B.V. | Method for supplying gas with flow rate gradient over substrate |
US20140048765A1 (en) | 2012-08-16 | 2014-02-20 | Xiaolong Ma | Semiconductor device and method for manufacturing the same |
US20150152547A1 (en) | 2012-08-17 | 2015-06-04 | Ihi Corporation | Method and apparatus for manufacturing heat-resistant composite material |
US20140056770A1 (en) | 2012-08-21 | 2014-02-27 | Uop Llc | Methane conversion apparatus and process using a supersonic flow reactor |
US20140058179A1 (en) | 2012-08-21 | 2014-02-27 | Uop Llc | Pyrolytic reactor |
US20140053866A1 (en) | 2012-08-23 | 2014-02-27 | Applied Materials, Inc. | Method and hardware for cleaning uv chambers |
US20140060147A1 (en) | 2012-08-28 | 2014-03-06 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US20140067110A1 (en) | 2012-08-28 | 2014-03-06 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US20170256429A1 (en) | 2012-08-28 | 2017-09-07 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
USD693200S1 (en) | 2012-08-28 | 2013-11-12 | Lee Valley Tools, Ltd. | Bench stop |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US20140060572A1 (en) | 2012-08-30 | 2014-03-06 | Tokyo Electron Limited | Plasma processing apparatus and cleaning method for removing metal oxide film |
US8859368B2 (en) | 2012-09-04 | 2014-10-14 | Globalfoundries Inc. | Semiconductor device incorporating a multi-function layer into gate stacks |
US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
US8742668B2 (en) | 2012-09-05 | 2014-06-03 | Asm Ip Holdings B.V. | Method for stabilizing plasma ignition |
US20140062304A1 (en) | 2012-09-05 | 2014-03-06 | Asm Ip Holding B.V. | Method for Stabilizing Plasma Ignition |
US20140065841A1 (en) | 2012-09-05 | 2014-03-06 | Asm Ip Holding B.V. | ATOMIC LAYER DEPOSITION OF GeO2 |
US8651788B1 (en) | 2012-09-06 | 2014-02-18 | Horst Budde | Variable-length, adjustable spacer |
US9171714B2 (en) | 2012-09-07 | 2015-10-27 | Applied Materials, Inc. | Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation |
US20140072726A1 (en) | 2012-09-11 | 2014-03-13 | Asm Ip Holding B.V. | Deposition apparatus and method of depositing thin film using the same |
US9605342B2 (en) | 2012-09-12 | 2017-03-28 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US20140073143A1 (en) | 2012-09-12 | 2014-03-13 | Asm Ip Holdings B.V. | Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10023960B2 (en) | 2012-09-12 | 2018-07-17 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US20150184291A1 (en) | 2012-09-12 | 2015-07-02 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US20170191164A1 (en) | 2012-09-12 | 2017-07-06 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US20140072925A1 (en) | 2012-09-13 | 2014-03-13 | Tokyo Electron Limited | Heat treatment apparatus |
US9759489B2 (en) | 2012-09-13 | 2017-09-12 | Tokyo Electron Limited | Heat treatment apparatus |
US20140077240A1 (en) | 2012-09-17 | 2014-03-20 | Radek Roucka | Iv material photonic device on dbr |
US20140080314A1 (en) | 2012-09-18 | 2014-03-20 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20140076861A1 (en) | 2012-09-19 | 2014-03-20 | Carrie E. Cornelius | Atmospheric-pressure plasma processing apparatus and method |
US20140087564A1 (en) | 2012-09-21 | 2014-03-27 | Tokyo Electron Limited | Plasama processing apparatus and plasma processing method |
US20140099794A1 (en) | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
US20140087544A1 (en) | 2012-09-24 | 2014-03-27 | Asm America, Inc. | Tin precursors for vapor deposition and deposition processes |
US20140087490A1 (en) | 2012-09-25 | 2014-03-27 | Intermolecular, Inc. | Method and Apparatus for Improving Particle Performance |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US20140084341A1 (en) | 2012-09-26 | 2014-03-27 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US20160181368A1 (en) | 2012-09-26 | 2016-06-23 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US20140094027A1 (en) | 2012-10-03 | 2014-04-03 | Osaka University | Film forming method and film forming apparatus |
US20140096716A1 (en) | 2012-10-05 | 2014-04-10 | Asm Ip Holding B.V. | Heating/Cooling Pedestal for Semiconductor-Processing Apparatus |
US20140099798A1 (en) | 2012-10-05 | 2014-04-10 | Asm Ip Holding B.V. | UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same |
US9353441B2 (en) | 2012-10-05 | 2016-05-31 | Asm Ip Holding B.V. | Heating/cooling pedestal for semiconductor-processing apparatus |
US20200279721A1 (en) | 2012-10-12 | 2020-09-03 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US20140103145A1 (en) | 2012-10-12 | 2014-04-17 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US8764085B2 (en) | 2012-10-19 | 2014-07-01 | Sinfonia Technology Co., Ltd. | Clamping device and workpiece conveying robot |
US20140110798A1 (en) | 2012-10-22 | 2014-04-24 | Globalfoundries Inc. | Methods of forming a semiconductor device with low-k spacers and the resulting device |
US20140120723A1 (en) | 2012-10-26 | 2014-05-01 | Xinyu Fu | Methods for depositing fluorine/carbon-free conformal tungsten |
US20140117380A1 (en) | 2012-10-26 | 2014-05-01 | Dow Corning Corporation | Flat sic semiconductor substrate |
US20140120312A1 (en) | 2012-10-29 | 2014-05-01 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Coating packaged chamber parts for semiconductor plasma apparatus |
US20140120678A1 (en) | 2012-10-29 | 2014-05-01 | Matheson Tri-Gas | Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures |
US20140120750A1 (en) | 2012-10-31 | 2014-05-01 | International Business Machines Corporation | Implementing reconfigurable power connector for multiple wiring configurations |
US20140120487A1 (en) | 2012-10-31 | 2014-05-01 | Tokyo Electron Limited | Heat treatment apparatus |
US20140116335A1 (en) | 2012-10-31 | 2014-05-01 | Asm Ip Holding B.V. | UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus |
US20140120738A1 (en) | 2012-11-01 | 2014-05-01 | Asm Ip Holding B.V. | Method of depositing thin film |
US8821985B2 (en) | 2012-11-02 | 2014-09-02 | Intermolecular, Inc. | Method and apparatus for high-K gate performance improvement and combinatorial processing |
US20140127422A1 (en) | 2012-11-02 | 2014-05-08 | Intermolecular, Inc. | Method and Apparatus for High-K Gate Performance Improvement and Combinatorial Processing |
US20140127907A1 (en) | 2012-11-08 | 2014-05-08 | Micron Technology, Inc. | Methods of forming semiconductor structures and related sulfur dioxide etch chemistries |
US9786570B2 (en) | 2012-11-08 | 2017-10-10 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
US20140141674A1 (en) | 2012-11-16 | 2014-05-22 | Liquipel IP, LLC | Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings |
US20140141625A1 (en) | 2012-11-16 | 2014-05-22 | Asm Ip Holding B.V. | Method for Forming Insulation Film Using Non-Halide Precursor Having Four or More Silicons |
US8784951B2 (en) | 2012-11-16 | 2014-07-22 | Asm Ip Holding B.V. | Method for forming insulation film using non-halide precursor having four or more silicons |
US20150291830A1 (en) | 2012-11-16 | 2015-10-15 | Liquipel Ip Llc | Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings |
USD693782S1 (en) | 2012-11-19 | 2013-11-19 | Epicrew Corporation | Lid for epitaxial growing device |
US20140138779A1 (en) | 2012-11-20 | 2014-05-22 | GlobalFoundries, Inc. | Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance |
US8823672B2 (en) | 2012-11-20 | 2014-09-02 | Samsung Display Co., Ltd. | Touch panel display device |
US20140145332A1 (en) | 2012-11-26 | 2014-05-29 | Globalfoundries Inc. | Methods of forming graphene liners and/or cap layers on copper-based conductive structures |
US20140147587A1 (en) | 2012-11-27 | 2014-05-29 | Intermolecular, Inc. | Combinatorial Spin Deposition |
US20150292088A1 (en) | 2012-11-27 | 2015-10-15 | Claudio Canizares | Deposition systems having interchangeable gas injectors and related methods |
US20140148924A1 (en) | 2012-11-29 | 2014-05-29 | Asm Ip Holding B.V. | Scheduler for processing system |
US20150118009A1 (en) | 2012-12-03 | 2015-04-30 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Graphite Wafer Carrier for LED Epitaxial Wafer Processes |
US9166012B2 (en) | 2012-12-04 | 2015-10-20 | Samsung Electronics Co., Ltd. | Semiconductor memory devices including an air gap and methods of fabricating the same |
US20140158786A1 (en) | 2012-12-07 | 2014-06-12 | LGS Innovations LLC | Gas dispersion disc assembly |
US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
US20140158154A1 (en) | 2012-12-12 | 2014-06-12 | Tokyo Electron Limited | Method of modifying electrostatic chuck and plasma processing apparatus |
US20140170335A1 (en) | 2012-12-17 | 2014-06-19 | Intermolecular, Inc. | Methods and Apparatus for Combinatorial PECVD or PEALD |
US20150218695A1 (en) | 2012-12-18 | 2015-08-06 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
US20140170320A1 (en) | 2012-12-18 | 2014-06-19 | Tokyo Electron Limited | Thin film forming method and thin film forming apparatus |
US20140167187A1 (en) | 2012-12-19 | 2014-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | N Metal for FinFET |
US20140179092A1 (en) | 2012-12-26 | 2014-06-26 | SK Hynix Inc. | Method for forming void-free polysilicon and method for fabricating semiconductor device using the same |
US20140174354A1 (en) | 2012-12-26 | 2014-06-26 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20150353478A1 (en) | 2012-12-27 | 2015-12-10 | Sumitomo Chemical Company, Limited | Method for producing oxime |
US20160204436A1 (en) | 2012-12-28 | 2016-07-14 | Faradion Limited | Metal-containing compounds |
US20140182053A1 (en) | 2012-12-29 | 2014-07-03 | Alexander Yeh Industry Co., Ltd. | Pullable drain plug |
US20140187022A1 (en) | 2012-12-31 | 2014-07-03 | Sunedison, Inc. | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension |
US20140182689A1 (en) | 2012-12-31 | 2014-07-03 | Lam Research Corporation | Gas supply systems for substrate processing chambers and methods therefor |
US9076726B2 (en) | 2012-12-31 | 2015-07-07 | Imec | Method for tuning the effective work function of a gate structure in a semiconductor device |
WO2014107290A1 (en) | 2013-01-02 | 2014-07-10 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
US20140187045A1 (en) | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
US20140191389A1 (en) | 2013-01-07 | 2014-07-10 | SK Hynix Inc. | Semiconductor device and method of manufacturing the same |
US20140193983A1 (en) | 2013-01-10 | 2014-07-10 | Adrien Lavoie | APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS |
CN103014846A (en) | 2013-01-14 | 2013-04-03 | 东莞市中镓半导体科技有限公司 | Concentric-ring sprayer structure for material vapor phase epitaxy |
US20150345018A1 (en) | 2013-01-16 | 2015-12-03 | Universiteit Gent | Methods for Obtaining Hydrophilic Fluoropolymers |
US20150024567A1 (en) | 2013-01-17 | 2015-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect Reduction for Formation of Epitaxial Layer in Source and Drain Regions |
US20140202382A1 (en) | 2013-01-21 | 2014-07-24 | Asm Ip Holding B.V. | Deposition apparatus |
US20140202386A1 (en) | 2013-01-24 | 2014-07-24 | Tokyo Electron Limited | Substrate processing apparatus and susceptor |
US20140209976A1 (en) | 2013-01-25 | 2014-07-31 | Samsung Electronics Co., Ltd. | Transistors and methods of manufacturing the same |
US9018093B2 (en) | 2013-01-25 | 2015-04-28 | Asm Ip Holding B.V. | Method for forming layer constituted by repeated stacked layers |
US20140213061A1 (en) | 2013-01-30 | 2014-07-31 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
US20140217065A1 (en) | 2013-02-01 | 2014-08-07 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US20160115590A1 (en) | 2013-02-01 | 2016-04-28 | Asm Ip Holding B.V. | Method and system for treatment of deposition reactor |
US9228259B2 (en) | 2013-02-01 | 2016-01-05 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US20140220247A1 (en) | 2013-02-01 | 2014-08-07 | Asm Ip Holding B.V. | Method and system for treatment of deposition reactor |
US20150110147A1 (en) | 2013-02-04 | 2015-04-23 | Yoshiro Mizuno | Thermometer Management System |
US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
US20150376785A1 (en) | 2013-02-07 | 2015-12-31 | Nederlandse Organisatie Voor Toegepast- natuurwetenschappeliijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
US20140227881A1 (en) | 2013-02-08 | 2014-08-14 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US20140227861A1 (en) | 2013-02-08 | 2014-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom-Up PEALD Process |
US20140227444A1 (en) | 2013-02-13 | 2014-08-14 | Wayne State University | Synthesis And Characterization Of First Row Transition Metal Complexes Containing a-Imino Alkoxides As Precursors For Deposition Of Metal Films |
US20140227072A1 (en) | 2013-02-14 | 2014-08-14 | Samsung Electronics Co., Ltd. | Wafer transfer blade and wafer transfer apparatus having the same |
US20150368798A1 (en) | 2013-02-18 | 2015-12-24 | Garry K. Kwong | Apparatus And Process Containment For Spatially Separated Atomic Layer Deposition |
US20140231922A1 (en) | 2013-02-19 | 2014-08-21 | GlobalFoundries, Inc. | Semiconductor gate structure for threshold voltage modulation and method of making same |
US20160002776A1 (en) | 2013-02-21 | 2016-01-07 | Altatech Semiconductor | Chemical vapor deposition device |
US20140234466A1 (en) | 2013-02-21 | 2014-08-21 | HGST Netherlands B.V. | Imprint mold and method for making using sidewall spacer line doubling |
US20150345022A1 (en) | 2013-02-21 | 2015-12-03 | Joseph Yudovsky | Apparatus And Methods For Injector To Substrate Gap Control |
US8623770B1 (en) | 2013-02-21 | 2014-01-07 | HGST Netherlands B.V. | Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide |
US9741559B2 (en) | 2013-02-22 | 2017-08-22 | Tokyo Electron Limited | Film forming method, computer storage medium, and film forming system |
US20140238607A1 (en) | 2013-02-25 | 2014-08-28 | Tokyo Electron Limited | Plasma processing apparatus |
US9618846B2 (en) | 2013-02-25 | 2017-04-11 | Lam Research Corporation | PECVD films for EUV lithography |
US9449795B2 (en) | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
US20140242806A1 (en) | 2013-02-28 | 2014-08-28 | David Knapp | Metal Amide Deposition Precursors And Their Stabilization With An Inert Ampoule Liner |
US20140238608A1 (en) | 2013-02-28 | 2014-08-28 | Novellus Systems, Inc. | Ceramic showerhead with embedded rf electrode for capacitively coupled plasma reactor |
USD743357S1 (en) | 2013-03-01 | 2015-11-17 | Asm Ip Holding B.V. | Susceptor |
US8790743B1 (en) | 2013-03-04 | 2014-07-29 | Asm Ip Holding B.V. | Method for controlling cyclic plasma-assisted process |
US20140251788A1 (en) | 2013-03-05 | 2014-09-11 | Applied Materials, Inc. | Methods and apparatus for stable substrate processing with multiple rf power supplies |
TWD162593S (en) | 2013-03-05 | 2014-08-21 | 東京威力科創股份有限公司 | Probe card case |
TWD164568S (en) | 2013-03-05 | 2014-12-01 | 東京威力科創股份有限公司 | Probe card case |
US20140252710A1 (en) | 2013-03-06 | 2014-09-11 | Applied Materials, Inc. | Substrate support with integrated vacuum and edge purge conduits |
USD723153S1 (en) | 2013-03-08 | 2015-02-24 | Olen Borkholder | Recess ceiling fan bezel |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US20170204516A1 (en) | 2013-03-08 | 2017-07-20 | Applied Materials, Inc. | Chamber component with protective coating suitable for protection against fluorine plasma |
US20170011889A1 (en) | 2013-03-08 | 2017-01-12 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US10340125B2 (en) | 2013-03-08 | 2019-07-02 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
USD702188S1 (en) | 2013-03-08 | 2014-04-08 | Asm Ip Holding B.V. | Thermocouple |
US20140251953A1 (en) | 2013-03-08 | 2014-09-11 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US20140251954A1 (en) | 2013-03-08 | 2014-09-11 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US20150218700A1 (en) | 2013-03-08 | 2015-08-06 | Applied Materials, Inc. | Chamber component with protective coating suitable for protection against flourine plasma |
US20170154757A1 (en) | 2013-03-08 | 2017-06-01 | Asm Ip Holding B.V. | Method and system for in-situ formation of intermediate reactive species |
US20140252134A1 (en) | 2013-03-08 | 2014-09-11 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140252479A1 (en) | 2013-03-11 | 2014-09-11 | International Business Machines Corporation | Semiconductor fin isolation by a well trapping fin portion |
US20140264902A1 (en) | 2013-03-12 | 2014-09-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Novel Patterning Approach for Improved Via Landing Profile |
US20160005595A1 (en) | 2013-03-12 | 2016-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and Method of Manufacture |
US20140264444A1 (en) | 2013-03-13 | 2014-09-18 | International Business Machines Corporation | Stress-enhancing selective epitaxial deposition of embedded source and drain regions |
US20140262193A1 (en) | 2013-03-13 | 2014-09-18 | Techest Co., Ltd. | Edge ring cooling module for semi-conductor manufacture chuck |
US20140265097A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Substrate support plate with improved lift pin sealing |
US20140273497A1 (en) | 2013-03-13 | 2014-09-18 | Intermolecular Inc. | Wet Processing Systems and Methods with Replenishment |
US20140262028A1 (en) | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Non-Contact Wet-Process Cell Confining Liquid to a Region of a Solid Surface by Differential Pressure |
US10424477B2 (en) | 2013-03-14 | 2019-09-24 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US20140273531A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140265090A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Substrate support bushing |
US20140272341A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Thermal treated sandwich structure layer to improve adhesive strength |
US9309978B2 (en) | 2013-03-14 | 2016-04-12 | Dresser-Rand Company | Low head to stem ratio poppet valve |
US20140263272A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Yttria-based material coated chemical vapor deposition chamber heater |
US20140263172A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Resist hardening and development processes for semiconductor device manufacturing |
US20140273428A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
US20180366314A1 (en) | 2013-03-14 | 2018-12-20 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140273477A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US10395917B2 (en) | 2013-03-14 | 2019-08-27 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9824881B2 (en) | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US20190371594A1 (en) | 2013-03-14 | 2019-12-05 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140264297A1 (en) | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Thin film encapsulation-thin ultra high barrier layer for oled application |
US8841182B1 (en) | 2013-03-14 | 2014-09-23 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
US9613801B2 (en) | 2013-03-14 | 2017-04-04 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
US20140273510A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
US20140273528A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US9909492B2 (en) | 2013-03-15 | 2018-03-06 | Prime Group Alliance, Llc | Opposed piston internal combustion engine with inviscid layer sealing |
US20160013022A1 (en) | 2013-03-15 | 2016-01-14 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber |
US20160002786A1 (en) | 2013-03-15 | 2016-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et I'Exploitation des Procédés Georges Claude | Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films |
US20160005596A1 (en) | 2013-03-15 | 2016-01-07 | Applied Materials, Inc. | Ultra-conformal carbon film deposition layer-by-layer deposition of carbon-doped oxide films |
US9355876B2 (en) | 2013-03-15 | 2016-05-31 | Applied Materials, Inc. | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations |
US20140260684A1 (en) | 2013-03-15 | 2014-09-18 | H. Aaron Christmann | Rotatable torque-measuring apparatus and method |
US20140273530A1 (en) | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
US20140271081A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Shutter blade and robot blade with cte compensation |
US20160024655A1 (en) | 2013-03-15 | 2016-01-28 | Joseph Yudovsky | Atmospheric Lid With Rigid Plate For Carousel Processing Chambers |
US20150014632A1 (en) | 2013-03-15 | 2015-01-15 | Matthew H. Kim | Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices |
US20140287595A1 (en) | 2013-03-19 | 2014-09-25 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium |
US20140283747A1 (en) | 2013-03-21 | 2014-09-25 | Tokyo Electron Limited | Plasma processing apparatus and shower plate |
US20140290573A1 (en) | 2013-03-27 | 2014-10-02 | Epicrew Corporation | Susceptor Support Portion and Epitaxial Growth Apparatus Including Susceptor Support Portion |
TWI514509B (en) | 2013-03-27 | 2015-12-21 | Applied Materials Inc | Susceptor support portion and epitaxial growth apparatus including susceptor support portion |
US20140290578A1 (en) | 2013-03-28 | 2014-10-02 | Tokyo Electron Limited | Film deposition apparatus |
USD734377S1 (en) | 2013-03-28 | 2015-07-14 | Hirata Corporation | Top cover of a load lock chamber |
US9644266B2 (en) | 2013-03-29 | 2017-05-09 | Tokyo Electron Limited | Film forming apparatus, gas supply device and film forming method |
US20150361553A1 (en) | 2013-04-07 | 2015-12-17 | Shigemi Murakawa | Rotating semi-batch ald device |
US20160013086A1 (en) | 2013-04-08 | 2016-01-14 | Eugene Technology Co., Ltd. | Substrate processing device |
US9142437B2 (en) | 2013-04-10 | 2015-09-22 | Globalfoundries Inc. | System for separately handling different size FOUPs |
US20140308108A1 (en) | 2013-04-10 | 2014-10-16 | Globalfoundries Inc. | System for separately handling different size foups |
US8864202B1 (en) | 2013-04-12 | 2014-10-21 | Varian Semiconductor Equipment Associates, Inc. | Spring retained end effector contact pad |
US20160060752A1 (en) | 2013-04-19 | 2016-03-03 | Herakles | Method for producing a composite material with a carbide matrix |
US20140322885A1 (en) | 2013-04-29 | 2014-10-30 | Asm Ip Holding B.V. | Method of making a resistive random access memory device |
US20140322862A1 (en) | 2013-04-29 | 2014-10-30 | Asm Ip Holding B.V. | Method of making a resistive random access memory device with metal-doped resistive switching layer |
US20140327117A1 (en) | 2013-05-03 | 2014-11-06 | Applied Materials, Inc. | Optically tuned hardmask for multi-patterning applications |
JP2014222693A (en) | 2013-05-13 | 2014-11-27 | 大陽日酸株式会社 | Vapor growth device and component transfer method of the same |
USD793976S1 (en) | 2013-05-15 | 2017-08-08 | Ebara Corporation | Substrate retaining ring |
US9252024B2 (en) | 2013-05-17 | 2016-02-02 | Applied Materials, Inc. | Deposition chambers with UV treatment and methods of use |
US20160087028A1 (en) | 2013-05-21 | 2016-03-24 | Toshiyuki Hirota | Semiconductor device and method for manufacturing same |
US20140346600A1 (en) | 2013-05-22 | 2014-11-27 | International Business Machines Corporation | Integrated Circuit Having MOSFET with Embedded Stressor and Method to Fabricate Same |
US20140349033A1 (en) | 2013-05-23 | 2014-11-27 | Asm Ip Holding B.V. | Method For Forming Film By Plasma-Assisted Deposition Using Two-Frequency Combined Pulsed RF Power |
US9142393B2 (en) | 2013-05-23 | 2015-09-22 | Asm Ip Holding B.V. | Method for cleaning reaction chamber using pre-cleaning process |
US9365924B2 (en) | 2013-05-23 | 2016-06-14 | Asm Ip Holding B.V. | Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power |
US20140346142A1 (en) | 2013-05-25 | 2014-11-27 | HGST Netherlands B.V. | Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis |
USD726365S1 (en) | 2013-05-29 | 2015-04-07 | Sis Resources Ltd. | Mouthpiece plug for electronic cigarette |
US20160076949A1 (en) | 2013-05-30 | 2016-03-17 | Knowles Capital Formation Inc. | Wireless culinary probe calibration method and system |
US20140357090A1 (en) | 2013-05-31 | 2014-12-04 | Asm Ip Holding B.V. | Cyclic aluminum nitride deposition in a batch reactor |
US9605736B1 (en) | 2013-05-31 | 2017-03-28 | Rct Systems, Inc. | High temperature electromagnetic actuator |
US20140360430A1 (en) | 2013-06-05 | 2014-12-11 | Veeco Instruments, Inc. | Wafer carrier having thermal uniformity-enhancing features |
US8895395B1 (en) | 2013-06-06 | 2014-11-25 | International Business Machines Corporation | Reduced resistance SiGe FinFET devices and method of forming same |
US20140363985A1 (en) | 2013-06-07 | 2014-12-11 | Dnf Co., Ltd. | Novel Amino-Silyl Amine Compound, Method for Preparing the Same and Silicon-Containing Thin-Film Using the Same |
US20140363983A1 (en) | 2013-06-07 | 2014-12-11 | Asm Ip Holding B.V. | Method For Filling Recesses Using Pre-Treatment With Hydrocarbon-Containing Gas |
US9117657B2 (en) | 2013-06-07 | 2015-08-25 | Asm Ip Holding B.V. | Method for filling recesses using pre-treatment with hydrocarbon-containing gas |
CN104233226A (en) | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
US9123510B2 (en) | 2013-06-12 | 2015-09-01 | ASM IP Holding, B.V. | Method for controlling in-plane uniformity of substrate processed by plasma-assisted process |
USD796670S1 (en) | 2013-06-17 | 2017-09-05 | Q-Med Ab | Syringe part |
US20140367043A1 (en) | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
CN104244620A (en) | 2013-06-19 | 2014-12-24 | 上海微电子装备有限公司 | Intensive assembling cabinet for large semiconductor equipment |
US20160056156A1 (en) | 2013-06-20 | 2016-02-25 | Intel Corporation | Non-planar semiconductor device having doped sub-fin region and method to fabricate same |
US20160086811A1 (en) | 2013-06-26 | 2016-03-24 | Beijing Sevenstar Electronics Co., Ltd. | Vertical no-spin process chamber |
US20150004316A1 (en) | 2013-06-26 | 2015-01-01 | Applied Materials, Inc. | Methods Of Depositing A Metal Alloy Film |
US20150004798A1 (en) | 2013-06-28 | 2015-01-01 | Lam Research Corporation | Chemical deposition chamber having gas seal |
US9929011B2 (en) | 2013-07-02 | 2018-03-27 | Ultratech, Inc. | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations |
US20160155629A1 (en) | 2013-07-02 | 2016-06-02 | Ultratech, Inc. | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations |
US20150007770A1 (en) | 2013-07-03 | 2015-01-08 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
US20150011095A1 (en) | 2013-07-03 | 2015-01-08 | Lam Research Corporation | Chemical deposition apparatus having conductance control |
US8991887B2 (en) | 2013-07-08 | 2015-03-31 | Kabushiki Kaisha Yaskawa Denki | Suction structure, robot hand and robot |
US20150010381A1 (en) | 2013-07-08 | 2015-01-08 | United Microelectronics Corp. | Wafer processing chamber and method for transferring wafer in the same |
USD705745S1 (en) | 2013-07-08 | 2014-05-27 | Witricity Corporation | Printed resonator coil |
US20150140210A1 (en) | 2013-07-12 | 2015-05-21 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9099423B2 (en) | 2013-07-12 | 2015-08-04 | Asm Ip Holding B.V. | Doped semiconductor films and processing |
US8940646B1 (en) | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9790595B2 (en) | 2013-07-12 | 2017-10-17 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US20170256393A1 (en) | 2013-07-19 | 2017-09-07 | Lam Research Corporation | Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning |
JP2015021175A (en) | 2013-07-19 | 2015-02-02 | 大陽日酸株式会社 | Film production method of metallic thin film |
US9412564B2 (en) | 2013-07-22 | 2016-08-09 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US20150024609A1 (en) | 2013-07-22 | 2015-01-22 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US20160013024A1 (en) | 2013-07-22 | 2016-01-14 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9748104B2 (en) | 2013-07-24 | 2017-08-29 | Tokyo Electron Limited | Method of depositing film |
US20150030766A1 (en) | 2013-07-25 | 2015-01-29 | Novellus Systems, Inc. | Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline |
US20160152649A1 (en) | 2013-07-26 | 2016-06-02 | President And Fellows Of Harvard College | Metal amides of cyclic amines |
US20150030782A1 (en) | 2013-07-26 | 2015-01-29 | Air Products And Chemicals, Inc. | Volatile dihydropyrazinly and dihydropyrazine metal complexes |
CN104342637A (en) | 2013-07-26 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
US20160175805A1 (en) | 2013-08-02 | 2016-06-23 | Johnson Matthey Public Limited Company | Getter composition |
US20150228749A1 (en) | 2013-08-05 | 2015-08-13 | International Business Machines Corporation | Enabling enhanced reliability and mobility for replacement gate planar and finfet structures |
USD784276S1 (en) | 2013-08-06 | 2017-04-18 | Applied Materials, Inc. | Susceptor assembly |
US20150041431A1 (en) | 2013-08-07 | 2015-02-12 | Ultratech, Inc. | Methods of laser processing photoresist in a gaseous environment |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US20160314967A1 (en) | 2013-08-14 | 2016-10-27 | ASM IP Holding, B.V. | Structures and devices including germanium-tin films and methods of forming same |
US20150048485A1 (en) | 2013-08-14 | 2015-02-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US8900999B1 (en) | 2013-08-16 | 2014-12-02 | Applied Materials, Inc. | Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application |
WO2015026230A1 (en) | 2013-08-19 | 2015-02-26 | Asm Ip Holding B.V. | Twin-assembly of diverging semiconductor processing systems |
US10622196B2 (en) | 2013-08-21 | 2020-04-14 | Tokyo Electron Limited | Plasma processing apparatus |
US20150056815A1 (en) | 2013-08-21 | 2015-02-26 | Tel Epion Inc. | Gcib etching method for adjusting fin height of finfet devices |
US20150056821A1 (en) | 2013-08-22 | 2015-02-26 | Asm Ip Holding B.V. | Method for Forming SiOCH Film Using Organoaminosilane Annealing |
US9190263B2 (en) | 2013-08-22 | 2015-11-17 | Asm Ip Holding B.V. | Method for forming SiOCH film using organoaminosilane annealing |
US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
US20150061078A1 (en) | 2013-08-27 | 2015-03-05 | International Business Machines Corporation | Compound semiconductor structure |
US9136108B2 (en) | 2013-09-04 | 2015-09-15 | Asm Ip Holding B.V. | Method for restoring porous surface of dielectric layer by UV light-assisted ALD |
US20150072509A1 (en) | 2013-09-06 | 2015-03-12 | Applied Materials, Inc. | Pecvd microcrystalline silicon germanium (sige) |
US20160222516A1 (en) | 2013-09-11 | 2016-08-04 | Tokyo Electron Limited | Plasma processing device |
USD724553S1 (en) | 2013-09-13 | 2015-03-17 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
USD716742S1 (en) | 2013-09-13 | 2014-11-04 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
US20150078874A1 (en) | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Compliant robot blade for defect reduction |
US9284642B2 (en) | 2013-09-19 | 2016-03-15 | Asm Ip Holding B.V. | Method for forming oxide film by plasma-assisted processing |
US20150079311A1 (en) | 2013-09-19 | 2015-03-19 | Asm Ip Holding B.V. | Method for Forming Oxide Film by Plasma-Assisted Processing |
US20150137315A1 (en) | 2013-09-20 | 2015-05-21 | Intermolecular, Inc. | DRAM MIM Capacitor Using Non-Noble Electrodes |
US20150087139A1 (en) | 2013-09-20 | 2015-03-26 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
US8969934B1 (en) | 2013-09-24 | 2015-03-03 | International Business Machines Corporation | Gate-all-around nanowire MOSFET and method of formation |
US20150086316A1 (en) | 2013-09-26 | 2015-03-26 | Applied Materials, Inc. | Pneumatic end effector apparatus, substrate transportation systems, and methods for transporting substrates |
US20150086716A1 (en) | 2013-09-26 | 2015-03-26 | Veeco Ald Inc. | Printing of colored pattern using atomic layer deposition |
US20150087154A1 (en) | 2013-09-26 | 2015-03-26 | Lam Research Corporation | High aspect ratio etch with combination mask |
US20160133628A1 (en) | 2013-09-27 | 2016-05-12 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US10361201B2 (en) | 2013-09-27 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor structure and device formed using selective epitaxial process |
US20150091057A1 (en) | 2013-09-27 | 2015-04-02 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US20150094470A1 (en) | 2013-09-27 | 2015-04-02 | Antonio Sanchez | Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling |
CN104517892A (en) | 2013-09-30 | 2015-04-15 | 朗姆研究公司 | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
USD756929S1 (en) | 2013-09-30 | 2016-05-24 | Danfoss A/S | Electrical connector for refrigeration valve |
US20160211135A1 (en) | 2013-09-30 | 2016-07-21 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and recording medium |
US20150099375A1 (en) | 2013-10-03 | 2015-04-09 | Air Products And Chemicals, Inc. | Methods for Depositing Silicon Nitride Films |
US20150099342A1 (en) | 2013-10-04 | 2015-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of Forming a Trench Structure |
US20150099374A1 (en) | 2013-10-07 | 2015-04-09 | Tokyo Electron Limited | Method and Apparatus of Forming Silicon Nitride Film |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US20150099072A1 (en) | 2013-10-09 | 2015-04-09 | Asm Ip Holding B.V. | Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT |
US20150104574A1 (en) | 2013-10-15 | 2015-04-16 | Veeco Ald Inc. | Fast atomic layer deposition process using seed precursor |
US20150102466A1 (en) | 2013-10-16 | 2015-04-16 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor-on-insulator structure and method of fabricating the same |
US20150287591A1 (en) | 2013-10-16 | 2015-10-08 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US20150104575A1 (en) | 2013-10-16 | 2015-04-16 | The Board Of Trustees Of The University Of Illinois | Multi-metal films, alternating film multilayers, formation methods and deposition system |
US20160195331A1 (en) | 2013-10-17 | 2016-07-07 | Eugene Technology Co., Ltd. | Substrate treatment apparatus |
US20150111374A1 (en) | 2013-10-18 | 2015-04-23 | International Business Machines Corporation | Surface treatment in a dep-etch-dep process |
US20150111395A1 (en) | 2013-10-21 | 2015-04-23 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20150110968A1 (en) | 2013-10-22 | 2015-04-23 | Lam Research Corporation | Tandem source activation for cyclical deposition of films |
US20150118863A1 (en) | 2013-10-25 | 2015-04-30 | Lam Research Corporation | Methods and apparatus for forming flowable dielectric films having low porosity |
US20160273106A1 (en) | 2013-10-28 | 2016-09-22 | Safc Hitech Inc. | Metal complexes containing amidoimine ligands |
US20150118846A1 (en) | 2013-10-28 | 2015-04-30 | Asm Ip Holding B.V. | Method For Trimming Carbon-Containing Film At Reduced Trimming Rate |
US9343308B2 (en) | 2013-10-28 | 2016-05-17 | Asm Ip Holding B.V. | Method for trimming carbon-containing film at reduced trimming rate |
US20150114295A1 (en) | 2013-10-29 | 2015-04-30 | Asm Ip Holding B.V. | Deposition apparatus |
US9029272B1 (en) | 2013-10-31 | 2015-05-12 | Asm Ip Holding B.V. | Method for treating SiOCH film with hydrogen plasma |
US9583333B2 (en) | 2013-11-01 | 2017-02-28 | Applied Materials, Inc. | Low temperature silicon nitride films using remote plasma CVD technology |
US20150126036A1 (en) | 2013-11-05 | 2015-05-07 | Tokyo Electron Limited | Controlling etch rate drift and particles during plasma processing |
US11053584B2 (en) | 2013-11-05 | 2021-07-06 | Taiwan Semiconductor Manufacturing Company Limited | System and method for supplying a precursor for an atomic layer deposition (ALD) process |
US20150125628A1 (en) | 2013-11-06 | 2015-05-07 | Asm Ip Holding B.V. | Method of depositing thin film |
CN104630735A (en) | 2013-11-06 | 2015-05-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Temperature monitoring device and plasma processing apparatus |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US20150122180A1 (en) | 2013-11-07 | 2015-05-07 | Samsung Display Co., Ltd. | Substrate transfer apparatus and thin film deposition apparatus having the same |
US20150132953A1 (en) | 2013-11-13 | 2015-05-14 | Intermolecular Inc. | Etching of semiconductor structures that include titanium-based layers |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
USD739222S1 (en) | 2013-11-13 | 2015-09-22 | Jeff Chadbourne | Two-piece magnetic clamp |
US20150132212A1 (en) | 2013-11-13 | 2015-05-14 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures and devices including a conformal carbon film, and system of forming same |
US20170032942A1 (en) | 2013-11-21 | 2017-02-02 | Entegris, Inc. | Surface coating for chamber components used in plasma systems |
US9745658B2 (en) | 2013-11-25 | 2017-08-29 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ALD films |
US20150144060A1 (en) | 2013-11-25 | 2015-05-28 | Terasemicon Corporation | Cluster-batch type system for processing substrate |
US20150147482A1 (en) | 2013-11-25 | 2015-05-28 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ald films |
US20160273128A1 (en) | 2013-11-25 | 2016-09-22 | Lg Siltron Inc. | Epitaxial wafer growth apparatus |
US20150147483A1 (en) | 2013-11-26 | 2015-05-28 | Asm Ip Holding B.V. | Method for Forming Conformal Nitrided, Oxidized, or Carbonized Dielectric Film by Atomic Layer Deposition |
US20150147488A1 (en) | 2013-11-26 | 2015-05-28 | SK Hynix Inc. | Plasma enhanced vapor phase deposition |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US20160281223A1 (en) | 2013-11-26 | 2016-09-29 | Ultratech, Inc. | Plasma enhanced ald system |
US20150155177A1 (en) | 2013-12-02 | 2015-06-04 | Applied Materials, Inc. | Procedure for etch rate consistency |
US20150155140A1 (en) | 2013-12-04 | 2015-06-04 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the same |
US9355882B2 (en) | 2013-12-04 | 2016-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transfer module for bowed wafers |
US20150162168A1 (en) | 2013-12-06 | 2015-06-11 | University Of Maryland, College Park | Reactor for plasma-based atomic layer etching of materials |
US20150162214A1 (en) | 2013-12-09 | 2015-06-11 | Applied Materials, Inc. | Methods Of Selective Layer Deposition |
US20150162185A1 (en) | 2013-12-11 | 2015-06-11 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
JP2015115461A (en) | 2013-12-11 | 2015-06-22 | 大日本印刷株式会社 | Defect correction method of microstructure and manufacturing method |
US20150170945A1 (en) | 2013-12-13 | 2015-06-18 | Sinfonia Technology Co., Ltd. | Efem |
US20150170954A1 (en) | 2013-12-17 | 2015-06-18 | Applied Materials, Inc. | Substrate support apparatus having reduced substrate particle generation |
US20150167705A1 (en) | 2013-12-17 | 2015-06-18 | Samsung Electronics Co., Ltd. | Substrate treating apparatus and blocker plate assembly |
US20150170975A1 (en) | 2013-12-17 | 2015-06-18 | Texas Instruments Incorporated | Elongated contacts using litho-freeze-litho-etch process |
US20150170907A1 (en) | 2013-12-18 | 2015-06-18 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US20150171177A1 (en) | 2013-12-18 | 2015-06-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure with metal gate and manufacuring method thereof |
US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US20150170914A1 (en) | 2013-12-18 | 2015-06-18 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US20170250075A1 (en) | 2013-12-18 | 2017-08-31 | Imec Vzw | Method of Producing Transition Metal Dichalcogenide Layer |
US20150179640A1 (en) | 2013-12-19 | 2015-06-25 | Globalfoundries Inc. | Common fabrication of different semiconductor devices with different threshold voltages |
US20150176124A1 (en) | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD |
US20150179415A1 (en) | 2013-12-19 | 2015-06-25 | Tokyo Electron Limited | Substrate processing apparatus |
US9640542B2 (en) | 2013-12-20 | 2017-05-02 | SK Hynix Inc. | Semiconductor device having contact pads |
US10400335B2 (en) | 2013-12-20 | 2019-09-03 | Applied Materials, Inc. | Dual-direction chemical delivery system for ALD/CVD chambers |
US20150179564A1 (en) | 2013-12-20 | 2015-06-25 | SK Hynix Inc. | Semiconductor device and method of manufacturing the same |
US20170362710A1 (en) | 2013-12-20 | 2017-12-21 | Applied Materials, Inc. | Dual-Direction Chemical Delivery System For ALD/CVD Chambers |
US9353440B2 (en) | 2013-12-20 | 2016-05-31 | Applied Materials, Inc. | Dual-direction chemical delivery system for ALD/CVD chambers |
US20150176126A1 (en) | 2013-12-20 | 2015-06-25 | Applied Materials, Inc. | Dual-Direction Chemical Delivery System for ALD/CVD Chambers |
US9765432B2 (en) | 2013-12-20 | 2017-09-19 | Applied Materials, Inc. | Dual-direction chemical delivery system for ALD/CVD chambers |
US20150174768A1 (en) | 2013-12-23 | 2015-06-25 | Lam Research Corporation | Microstructures for improved wafer handling |
US20150175467A1 (en) | 2013-12-23 | 2015-06-25 | Infineon Technologies Austria Ag | Mold, method for producing a mold, and method for forming a mold article |
US9281277B2 (en) | 2013-12-23 | 2016-03-08 | Samsung Electronics Co., Ltd. | Methods of forming wiring structures |
US20150179501A1 (en) | 2013-12-24 | 2015-06-25 | Ritesh Jhaveri | Techniques for trench isolation using flowable dielectric materials |
US20150184287A1 (en) | 2013-12-26 | 2015-07-02 | Intermolecular, Inc. | Systems and Methods for Parallel Combinatorial Vapor Deposition Processing |
US9583345B2 (en) | 2013-12-26 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning |
US10134617B2 (en) | 2013-12-26 | 2018-11-20 | Veeco Instruments Inc. | Wafer carrier having thermal cover for chemical vapor deposition systems |
US20150187611A1 (en) | 2013-12-27 | 2015-07-02 | Hitachi Kokusai Electric Inc. | Substrate processing system, method of manufacturing semiconductor device and non-transitory computer-readable recording medium |
US20150187559A1 (en) | 2013-12-27 | 2015-07-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
TW201531587A (en) | 2013-12-30 | 2015-08-16 | Lam Res Corp | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US20150187908A1 (en) | 2013-12-30 | 2015-07-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for fabricating semiconductor device |
US9219006B2 (en) | 2014-01-13 | 2015-12-22 | Applied Materials, Inc. | Flowable carbon film by FCVD hardware using remote plasma PECVD |
US20160351747A1 (en) | 2014-01-15 | 2016-12-01 | The Regents Of The University Of Michigan | Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer |
US20150203967A1 (en) | 2014-01-17 | 2015-07-23 | Lam Research Corporation | Method and apparatus for the reduction of defectivity in vapor deposited films |
US20160381732A1 (en) | 2014-01-17 | 2016-12-29 | Koninklijke Philips N.V. | Heating system comprising semiconductor light sources |
WO2015107009A1 (en) | 2014-01-17 | 2015-07-23 | Koninklijke Philips N.V. | Heating system comprising semiconductor light sources |
US20150203961A1 (en) | 2014-01-21 | 2015-07-23 | Applied Materials, Inc. | Methods for forming a cobalt-ruthenium liner layer for interconnect structures |
WO2015112728A1 (en) | 2014-01-23 | 2015-07-30 | Ultratech, Inc. | Vapor delivery system |
US20170145564A1 (en) | 2014-01-23 | 2017-05-25 | Ultratech, Inc. | Vapor delivery system |
US9798308B2 (en) | 2014-01-27 | 2017-10-24 | Kelk Ltd. | Temperature controller for semiconductor wafer and temperature control method for semiconductor wafer |
US9803926B2 (en) | 2014-01-28 | 2017-10-31 | Tokyo Electron Limited | Support mechanism and substrate processing apparatus |
US20160336392A1 (en) | 2014-01-28 | 2016-11-17 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and silicon carbide semiconductor device manufacturing method |
US20150211125A1 (en) | 2014-01-28 | 2015-07-30 | Tokyo Electron Limited | Plasma processing apparatus |
US9337031B2 (en) | 2014-01-28 | 2016-05-10 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
US20150221479A1 (en) | 2014-01-31 | 2015-08-06 | Applied Materials, Inc. | Rps assisted rf plasma source for semiconductor processing |
US9778561B2 (en) | 2014-01-31 | 2017-10-03 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
US20150221519A1 (en) | 2014-01-31 | 2015-08-06 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
US20150221480A1 (en) | 2014-01-31 | 2015-08-06 | Applied Materials, Inc. | Chamber coatings |
USD735836S1 (en) | 2014-02-04 | 2015-08-04 | Asm Ip Holding B.V. | Shower plate |
USD733261S1 (en) | 2014-02-04 | 2015-06-30 | Asm Ip Holding B.V. | Top plate |
USD733843S1 (en) | 2014-02-04 | 2015-07-07 | ASM IP Holding, B.V. | Shower plate |
USD725168S1 (en) | 2014-02-04 | 2015-03-24 | Asm Ip Holding B.V. | Heater block |
USD720838S1 (en) | 2014-02-04 | 2015-01-06 | Asm Ip Holding B.V. | Shower plate |
US20150217456A1 (en) | 2014-02-04 | 2015-08-06 | Asm Ip Holding B.V. | Anti-slip end-effector for transporting workpiece |
USD724701S1 (en) | 2014-02-04 | 2015-03-17 | ASM IP Holding, B.V. | Shower plate |
USD732644S1 (en) | 2014-02-04 | 2015-06-23 | Asm Ip Holding B.V. | Top plate |
USD732145S1 (en) | 2014-02-04 | 2015-06-16 | Asm Ip Holding B.V. | Shower plate |
US20150217330A1 (en) | 2014-02-04 | 2015-08-06 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
US9370863B2 (en) | 2014-02-04 | 2016-06-21 | Asm Ip Holding B.V. | Anti-slip end-effector for transporting workpiece |
US9895715B2 (en) | 2014-02-04 | 2018-02-20 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
USD726884S1 (en) | 2014-02-04 | 2015-04-14 | Asm Ip Holding B.V. | Heater block |
US9214340B2 (en) | 2014-02-05 | 2015-12-15 | Applied Materials, Inc. | Apparatus and method of forming an indium gallium zinc oxide layer |
US20150218698A1 (en) | 2014-02-06 | 2015-08-06 | Veeco Ald Inc. | Spatial deposition of material using short-distance reciprocating motions |
US8993457B1 (en) | 2014-02-06 | 2015-03-31 | Cypress Semiconductor Corporation | Method of fabricating a charge-trapping gate stack using a CMOS process flow |
US20150228513A1 (en) | 2014-02-07 | 2015-08-13 | Applied Materials, Inc. | Pixilated temperature controlled substrate support assembly |
US20150225850A1 (en) | 2014-02-07 | 2015-08-13 | HGST Netherlands B.V. | Method for line density multiplication using block copolymers and sequential infiltration synthesis |
US20150228572A1 (en) | 2014-02-10 | 2015-08-13 | International Business Machines Corporation | Nanoscale interconnect structure |
US20150228645A1 (en) | 2014-02-12 | 2015-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing |
USD733257S1 (en) | 2014-02-14 | 2015-06-30 | Hansgrohe Se | Overhead shower |
US20160305015A1 (en) | 2014-02-17 | 2016-10-20 | Ihi Corporation | Heat-resistant composite material production method and production device |
CN203721699U (en) | 2014-02-20 | 2014-07-16 | 北京七星华创电子股份有限公司 | Disk-like object holding device and disk-like object rotating platform < |
US20150243522A1 (en) | 2014-02-24 | 2015-08-27 | Tokyo Electron Limited | Etching method |
US20150240360A1 (en) | 2014-02-24 | 2015-08-27 | Lam Research Corporation | Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations |
US20150240359A1 (en) | 2014-02-25 | 2015-08-27 | Asm Ip Holding B.V. | Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same |
US20150240357A1 (en) | 2014-02-25 | 2015-08-27 | Tokyo Electron Limited | Substrate processing apparatus using rotatable table |
US9520289B2 (en) | 2014-02-25 | 2016-12-13 | Samsung Electronics Co., Ltd. | Methods of forming a pattern of a semiconductor device |
US20150243563A1 (en) | 2014-02-25 | 2015-08-27 | Globalfoundries Inc. | Integrated circuit having multiple threshold voltages |
US9362180B2 (en) | 2014-02-25 | 2016-06-07 | Globalfoundries Inc. | Integrated circuit having multiple threshold voltages |
US9576952B2 (en) | 2014-02-25 | 2017-02-21 | Globalfoundries Inc. | Integrated circuits with varying gate structures and fabrication methods |
US20150243658A1 (en) | 2014-02-25 | 2015-08-27 | Globalfoundries Inc. | Integrated circuits with varying gate structures and fabrication methods |
US20150243545A1 (en) | 2014-02-26 | 2015-08-27 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
US9966299B2 (en) | 2014-02-26 | 2018-05-08 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
US9425078B2 (en) | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
US20150241787A1 (en) | 2014-02-26 | 2015-08-27 | Tokyo Electron Limited | Substrate processing method, program, computer-readable storage medium, and substrate processing system |
US20150243542A1 (en) | 2014-02-27 | 2015-08-27 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
WO2015127614A1 (en) | 2014-02-27 | 2015-09-03 | 深圳市祥涛瑞杰贸易有限公司 | Air purification structure and air purification system |
US20150255319A1 (en) | 2014-03-04 | 2015-09-10 | Tokyo Electron Limited | Conveying method and substrate processing apparatus |
US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
US20150255385A1 (en) | 2014-03-06 | 2015-09-10 | SK Hynix Inc. | Semiconductor device and method of fabricating the same |
US20150255324A1 (en) | 2014-03-06 | 2015-09-10 | Applied Materials, Inc. | Seamless gap-fill with spatial atomic layer deposition |
US20150263033A1 (en) | 2014-03-12 | 2015-09-17 | Kabushiki Kaisha Toshiba | Semiconductor Device and Manufacturing Method Thereof |
US20150262828A1 (en) | 2014-03-14 | 2015-09-17 | Applied Materials, Inc. | MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD) |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US20150267299A1 (en) | 2014-03-18 | 2015-09-24 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US20190106788A1 (en) | 2014-03-18 | 2019-04-11 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US20150267297A1 (en) | 2014-03-18 | 2015-09-24 | Asm Ip Holding B.V. | Method for Performing Uniform Processing in Gas System-Sharing Multiple Reaction Chambers |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US20150267298A1 (en) | 2014-03-18 | 2015-09-24 | Tokyo Electron Limited | Film forming apparatus |
US20150267295A1 (en) | 2014-03-19 | 2015-09-24 | Asm Ip Holding B.V. | Removable substrate tray and assembly and reactor including same |
US20150267301A1 (en) | 2014-03-19 | 2015-09-24 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
US20150270146A1 (en) | 2014-03-19 | 2015-09-24 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
US9514927B2 (en) | 2014-03-19 | 2016-12-06 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
US20160372744A1 (en) | 2014-03-20 | 2016-12-22 | Kabushiki Kaisha Toshiba | Active material for nonaqueous electrolyte battery, electrode for nonaqueous electrolyte battery, nonaqueous electrolyte secondary battery, battery pack, method of manufacturing active material for nonaqueous electrolyte battery, and vehicle |
US20160376701A1 (en) | 2014-03-20 | 2016-12-29 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and ceiling part |
US20150267294A1 (en) | 2014-03-20 | 2015-09-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method for manufacturing semiconductor device and computer-readable recording medium |
US9412582B2 (en) | 2014-03-24 | 2016-08-09 | Hitachi Kokusai Electric Inc. | Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device |
US20150279708A1 (en) | 2014-03-25 | 2015-10-01 | SCREEN Holdings Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US9698031B2 (en) | 2014-03-25 | 2017-07-04 | SCREEN Holdings Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US20150275355A1 (en) | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
US20150279665A1 (en) | 2014-03-26 | 2015-10-01 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
US20150275357A1 (en) | 2014-03-26 | 2015-10-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20170011926A1 (en) | 2014-03-28 | 2017-01-12 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20150279682A1 (en) | 2014-03-31 | 2015-10-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
US20150279681A1 (en) | 2014-03-31 | 2015-10-01 | Asm Ip Holding B.V. | Plasma atomic layer deposition |
US20170136578A1 (en) | 2014-03-31 | 2017-05-18 | Mitsubishi Heavy Industries, Ltd. | Three-dimensional deposition device and three-dimensional deposition method |
US20150280051A1 (en) | 2014-04-01 | 2015-10-01 | Tsmc Solar Ltd. | Diffuser head apparatus and method of gas distribution |
US9343350B2 (en) | 2014-04-03 | 2016-05-17 | Asm Ip Holding B.V. | Anti-slip end effector for transporting workpiece using van der waals force |
US20150287626A1 (en) | 2014-04-03 | 2015-10-08 | Asm Ip Holding B.V. | Anti-Slip End Effector For Transporting Workpiece Using Van Der Waals Force |
US20150287612A1 (en) | 2014-04-07 | 2015-10-08 | Applied Materials, Inc. | Spacer formation |
US9663857B2 (en) | 2014-04-07 | 2017-05-30 | Asm Ip Holding B.V. | Method for stabilizing reaction chamber pressure |
US20150284848A1 (en) | 2014-04-07 | 2015-10-08 | Asm Ip Holding B.V. | Method for Stabilizing Reaction Chamber Pressure |
US20150287710A1 (en) | 2014-04-08 | 2015-10-08 | Tae-Hwan YUN | Semiconductor devices having conductive pads and methods of fabricating the same |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US20150299848A1 (en) | 2014-04-16 | 2015-10-22 | Asm Ip Holding B.V. | Dual selective deposition |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US20150308586A1 (en) | 2014-04-24 | 2015-10-29 | Asm Ip Holding B.V. | Lockout tagout for semiconductor vacuum valve |
US9184054B1 (en) | 2014-04-25 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
US20150307982A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
US20150311043A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Chamber component with fluorinated thin film coating |
US20150311151A1 (en) | 2014-04-28 | 2015-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure Having Air Gap and Method of Forming the Same |
US20150315704A1 (en) | 2014-05-02 | 2015-11-05 | Asm Ip Holding B.V. | Low-Oxidation Plasma-Assisted Process |
US9464352B2 (en) | 2014-05-02 | 2016-10-11 | Asm Ip Holding B.V. | Low-oxidation plasma-assisted process |
US20150325432A1 (en) | 2014-05-07 | 2015-11-12 | Tokyo Electron Limited | Film forming method, film forming apparatus and recording medium |
US20170173696A1 (en) | 2014-05-08 | 2017-06-22 | Stratasys Ltd. | Method and apparatus for 3d printing by selective sintering |
US20150364747A1 (en) | 2014-05-13 | 2015-12-17 | Uchicago Argonne, Llc | Materials for solid state electrolytes and protective electrode coatings for lithium batteries |
US20150332921A1 (en) | 2014-05-14 | 2015-11-19 | National Tsing Hua University | Carrier channel with element concentration gradient distribution and fabrication method thereof |
US9196483B1 (en) | 2014-05-14 | 2015-11-24 | National Tsing Hua University | Carrier channel with element concentration gradient distribution and fabrication method thereof |
US9343343B2 (en) | 2014-05-19 | 2016-05-17 | Asm Ip Holding B.V. | Method for reducing particle generation at bevel portion of substrate |
US20150340500A1 (en) | 2014-05-20 | 2015-11-26 | Globalfoundries Inc. | Semiconductor structure with self-aligned wells and multiple channel materials |
US20150340247A1 (en) | 2014-05-21 | 2015-11-26 | Sony Corporation | Method for forming a metal cap in a semiconductor memory device |
US20150340266A1 (en) | 2014-05-21 | 2015-11-26 | Applied Materials, Inc. | Thermal processing susceptor |
US9881788B2 (en) | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
USD733262S1 (en) | 2014-05-22 | 2015-06-30 | Young Boung Kang | Disposer of connection member for kitchen sink bowl |
US20150343741A1 (en) | 2014-05-27 | 2015-12-03 | Panasonic Intellectual Property Management Co., Ltd. | Gas barrier film, film substrate provided with gas barrier film, and electronic device including the film substrate |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US20150348755A1 (en) | 2014-05-29 | 2015-12-03 | Charm Engineering Co., Ltd. | Gas distribution apparatus and substrate processing apparatus including same |
US20150349073A1 (en) | 2014-05-29 | 2015-12-03 | SK Hynix Inc. | Dual work function buried gate-type transistor, method for forming the same, and electronic device including the same |
US20170191861A1 (en) | 2014-05-30 | 2017-07-06 | Eltek S.P.A. | Sensor for detecting the level of a medium |
US20170200622A1 (en) | 2014-05-30 | 2017-07-13 | Ebara Corporation | Vacuum evacuation system |
US20150343559A1 (en) | 2014-06-02 | 2015-12-03 | Disco Corporation | Chip manufacturing method |
US20150354060A1 (en) | 2014-06-04 | 2015-12-10 | Tokyo Electron Limited | Film formation apparatus, film formation method, and storage medium |
US9287273B2 (en) | 2014-06-06 | 2016-03-15 | Imec Vzw | Method for manufacturing a semiconductor device comprising transistors each having a different effective work function |
US20150270140A1 (en) | 2014-06-09 | 2015-09-24 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
US20150364371A1 (en) | 2014-06-12 | 2015-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned interconnect with protection layer |
USD743513S1 (en) | 2014-06-13 | 2015-11-17 | Asm Ip Holding B.V. | Seal ring |
US20150364347A1 (en) | 2014-06-13 | 2015-12-17 | Applied Materials, Inc. | Direct lift process apparatus |
US20170121845A1 (en) | 2014-06-13 | 2017-05-04 | Forschungszentrum Jülich GmbH | Method For Depositing A Crystal Layer At Low Temperatures, In Particular A Photoluminescent IV-IV Layer On An IV Substrate, And An Optoelectronic Component Having Such A Layer |
US20150361550A1 (en) | 2014-06-16 | 2015-12-17 | Tokyo Electron Limited | Film formation apparatus, film formation method, and storage medium |
US20150372056A1 (en) | 2014-06-18 | 2015-12-24 | Dong-Jun Seong | Semiconductor diodes, and variable resistance memory devices |
USD753629S1 (en) | 2014-06-19 | 2016-04-12 | Yamaha Corporation | Speaker |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US20150371864A1 (en) | 2014-06-19 | 2015-12-24 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US20170154895A1 (en) | 2014-06-23 | 2017-06-01 | Institute of Microelectronics, Chinese Academy of Sciences | Three-Dimensional Semiconductor Device and Manufacturing Method Therefor |
US20150367253A1 (en) | 2014-06-24 | 2015-12-24 | Us Synthetic Corporation | Photoluminescent thin-layer chromatography plate and methods for making same |
US20150380296A1 (en) | 2014-06-25 | 2015-12-31 | Lam Research Corporation | Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications |
US20170069725A1 (en) | 2014-06-26 | 2017-03-09 | Intel Corporation | Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same |
US20180040746A1 (en) | 2014-06-27 | 2018-02-08 | Sunpower Corporation | Passivation of light-receiving surfaces of solar cells with high energy gap (eg) materials |
US20160005839A1 (en) | 2014-07-03 | 2016-01-07 | Applied Materials, Inc. | Method and apparatus for selective deposition |
US20160005571A1 (en) | 2014-07-03 | 2016-01-07 | Applied Materials, Inc. | Showerhead having a detachable high resistivity gas distribution plate |
USD736348S1 (en) | 2014-07-07 | 2015-08-11 | Jiangmen Triumph Rain Showers Co., LTD | Spray head for a shower |
US10287684B2 (en) | 2014-07-08 | 2019-05-14 | Kokusai Electric Corporation | Substrate processing apparatus |
US9349620B2 (en) | 2014-07-09 | 2016-05-24 | Asm Ip Holdings B.V. | Apparatus and method for pre-baking substrate upstream of process chamber |
US20160010208A1 (en) | 2014-07-10 | 2016-01-14 | Applied Materials, Inc. | Design of susceptor in chemical vapor deposition reactor |
US20160017493A1 (en) | 2014-07-15 | 2016-01-21 | Lam Research Corporation | Systems and methods for improving deposition rate uniformity and reducing defects in substrate peocessing systems |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US9337057B2 (en) | 2014-07-21 | 2016-05-10 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US20160020071A1 (en) | 2014-07-21 | 2016-01-21 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
US20210032754A1 (en) | 2014-07-28 | 2021-02-04 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US20170165624A1 (en) | 2014-07-28 | 2017-06-15 | Total Raffinage Chimie | Ceramic Orifice Chamber for Fluid Catalytic Cracking Unit |
US20160024656A1 (en) | 2014-07-28 | 2016-01-28 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US20160035566A1 (en) | 2014-07-30 | 2016-02-04 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ald system |
US20160035542A1 (en) | 2014-07-30 | 2016-02-04 | Lam Research Corporation | Method of conditioning vacuum chamber of semiconductor substrate processing apparatus |
US20160035596A1 (en) | 2014-08-01 | 2016-02-04 | Asm Ip Holding B.V. | Apparatus And Method For Transporting Wafers Between Wafer Carrier And Process Tool Under Vacuum |
US20160032453A1 (en) | 2014-08-01 | 2016-02-04 | Lam Research Corporation | Systems and methods for vapor delivery |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US20160042954A1 (en) | 2014-08-06 | 2016-02-11 | Globalfoundries Inc. | Replacement metal gate and fabrication process with reduced lithography steps |
USD751176S1 (en) | 2014-08-07 | 2016-03-08 | Hansgrohe Se | Overhead shower |
WO2016019795A1 (en) | 2014-08-08 | 2016-02-11 | 珠海格力电器股份有限公司 | Air conditioner indoor unit and air conditioner |
US20180355484A1 (en) | 2014-08-14 | 2018-12-13 | L'Air Liquide, Société Anonyme pour l'Etude et I'Exploitation des Procédés Georges Claude | Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films |
US9252238B1 (en) | 2014-08-18 | 2016-02-02 | Lam Research Corporation | Semiconductor structures with coplanar recessed gate layers and fabrication methods |
US9362137B2 (en) | 2014-08-18 | 2016-06-07 | Samsung Electronics Co., Ltd. | Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US20160056074A1 (en) | 2014-08-21 | 2016-02-25 | Lam Research Corporation | Method for void-free cobalt gap fill |
US20180127876A1 (en) | 2014-08-21 | 2018-05-10 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US20160051964A1 (en) | 2014-08-21 | 2016-02-25 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
USD782419S1 (en) | 2014-08-22 | 2017-03-28 | Christopher C. Willette | Female keyed lamp plug |
CN104201108A (en) | 2014-08-27 | 2014-12-10 | 上海集成电路研发中心有限公司 | SiGe (silicon germanium) source and drain area manufacturing method |
US20160064208A1 (en) | 2014-08-27 | 2016-03-03 | Ultratech, Inc. | Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation |
US20160064231A1 (en) | 2014-08-29 | 2016-03-03 | Applied Materials, Inc. | Fast atomic layer etch process using an electron beam |
US20170178942A1 (en) | 2014-09-05 | 2017-06-22 | Rorze Corporation | Load port and load port atmosphere replacing method |
US20160069613A1 (en) | 2014-09-08 | 2016-03-10 | Tokyo Electron Limited | High capacity magnetic annealing system and method of operating |
US20160071750A1 (en) | 2014-09-09 | 2016-03-10 | Asm Ip Holding B.V. | Assembly of liner and flange for vertical furnace as well as a vertical process furnace |
USD742202S1 (en) | 2014-09-11 | 2015-11-03 | Thomas Jason Cyphers | Sign frame key |
TW201613231A (en) | 2014-09-16 | 2016-04-01 | Huaquan Energy | Geometry and insulation components of motor mechanism |
US20180068844A1 (en) | 2014-09-17 | 2018-03-08 | Asm Ip Holding B.V. | Deposition of SiN |
US20160079054A1 (en) | 2014-09-17 | 2016-03-17 | Asm Ip Holding B.V. | Deposition of SiN |
US10741386B2 (en) | 2014-09-17 | 2020-08-11 | Asm Ip Holding B.V. | Deposition of SiN |
USD764196S1 (en) | 2014-09-17 | 2016-08-23 | Sheryl Handler | Stool |
US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
US20170271501A1 (en) | 2014-09-24 | 2017-09-21 | Intel Corporation | Scaled tfet transistor formed using nanowire with surface termination |
US20170309490A1 (en) | 2014-09-24 | 2017-10-26 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US9478414B2 (en) | 2014-09-26 | 2016-10-25 | Asm Ip Holding B.V. | Method for hydrophobization of surface of silicon-containing film by ALD |
US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
US20170294318A1 (en) | 2014-09-30 | 2017-10-12 | Hitachi Kokusai Electric Inc. | Substrate processing device, manufacturing method for semiconductor device, and reaction tube |
US20160099150A1 (en) | 2014-10-03 | 2016-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods of forming finfets |
US20160099166A1 (en) | 2014-10-03 | 2016-04-07 | Applied Materials, Inc. | Spring-Loaded Pins For Susceptor Assembly and Processing Methods Using Same |
US20160099250A1 (en) | 2014-10-03 | 2016-04-07 | Sandisk Technologies Inc. | Three dimensional nand device with silicon germanium heterostructure channel |
US20210156030A1 (en) | 2014-10-07 | 2021-05-27 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US20160097123A1 (en) | 2014-10-07 | 2016-04-07 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US20170216762A1 (en) | 2014-10-07 | 2017-08-03 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US20160102214A1 (en) | 2014-10-13 | 2016-04-14 | Heraeus Deutschland GmbH & Co. KG | Copper coloured paint, a process for making it and its application |
USD759137S1 (en) | 2014-10-14 | 2016-06-14 | Victor Equipment Company | Consumables adapter for a welding torch |
US20160111304A1 (en) | 2014-10-20 | 2016-04-21 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
US20160111438A1 (en) | 2014-10-20 | 2016-04-21 | SanDisk Technologies, Inc. | Batch contacts for multiple electrically conductive layers |
US20160118224A1 (en) | 2014-10-27 | 2016-04-28 | Tokyo Electron Limited | Plasma processing apparatus |
US9929055B2 (en) | 2014-10-30 | 2018-03-27 | Applied Materials, Inc. | Method to grow thin epitaxial films at low temperature |
CN104307264A (en) | 2014-10-31 | 2015-01-28 | 苏州博菡环保科技有限公司 | Air purifier |
KR101535573B1 (en) | 2014-11-04 | 2015-07-13 | 연세대학교 산학협력단 | Method for synthesis of transition metal chalcogenide |
US20160133307A1 (en) | 2014-11-10 | 2016-05-12 | JoonMyoung LEE | Magnetic memory device and method of manufacturing the same |
US9305836B1 (en) | 2014-11-10 | 2016-04-05 | International Business Machines Corporation | Air gap semiconductor structure with selective cap bilayer |
US20160133504A1 (en) | 2014-11-12 | 2016-05-12 | Applied Materials, Inc. | Susceptor design to reduce edge thermal peak |
US20160141172A1 (en) | 2014-11-19 | 2016-05-19 | Asm Ip Holding B.V. | Method for depositing thin film |
US9891521B2 (en) | 2014-11-19 | 2018-02-13 | Asm Ip Holding B.V. | Method for depositing thin film |
US20160145738A1 (en) | 2014-11-21 | 2016-05-26 | Applied Materials, Inc. | Alcohol Assisted ALD Film Deposition |
JP2016098406A (en) | 2014-11-21 | 2016-05-30 | 東京エレクトロン株式会社 | Film deposition method of molybdenum film |
US20160148800A1 (en) | 2014-11-24 | 2016-05-26 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US20160148806A1 (en) | 2014-11-24 | 2016-05-26 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US9875891B2 (en) | 2014-11-24 | 2018-01-23 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US20160148801A1 (en) | 2014-11-25 | 2016-05-26 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
US20160148811A1 (en) | 2014-11-25 | 2016-05-26 | Hitachi Kokusai Electric Inc. | Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus |
US20160148821A1 (en) | 2014-11-26 | 2016-05-26 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20160307766A1 (en) | 2014-11-26 | 2016-10-20 | Asm Ip Holding B.V. | Cyclic doped aluminum nitride deposition |
US20160153088A1 (en) | 2014-12-02 | 2016-06-02 | Asm Ip Holding B.V. | Film forming apparatus |
US20160163556A1 (en) | 2014-12-04 | 2016-06-09 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US9997373B2 (en) | 2014-12-04 | 2018-06-12 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US20160163561A1 (en) | 2014-12-04 | 2016-06-09 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US20160163558A1 (en) | 2014-12-04 | 2016-06-09 | Lam Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
US20160163711A1 (en) | 2014-12-04 | 2016-06-09 | International Business Machines Corporation | Wet bottling process for small diameter deep trench capacitors |
US9142764B1 (en) | 2014-12-08 | 2015-09-22 | Intermolecular, Inc. | Methods of forming embedded resistors for resistive random access memory cells |
US20160172296A1 (en) | 2014-12-10 | 2016-06-16 | Tae-Wan Lim | Semiconductor device and method for manufacturing the same |
US20160168704A1 (en) | 2014-12-10 | 2016-06-16 | Ji-Hoon Choi | Gas injectors |
US9951421B2 (en) | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
US20160169766A1 (en) | 2014-12-11 | 2016-06-16 | Tokyo Electron Limited | Leakage determining method, substrate processing apparatus and storage medium |
US20160168699A1 (en) | 2014-12-12 | 2016-06-16 | Asm Ip Holding B.V. | Method for depositing metal-containing film using particle-reduction step |
US20160172189A1 (en) | 2014-12-15 | 2016-06-16 | Tokyo Electron Limited | Method of selective gas phase film deposition on a substrate |
US20160177448A1 (en) | 2014-12-18 | 2016-06-23 | Tokyo Electron Limited | Plasma processing apparatus |
US9820289B1 (en) | 2014-12-18 | 2017-11-14 | Sprint Spectrum L.P. | Method and system for managing quantity of carriers in air interface connection based on type of content |
US20180277423A1 (en) | 2014-12-19 | 2018-09-27 | Sunedison Semiconductor Limited | Systems and methods for performing epitaxial smoothing processes on semiconductor structures |
US9331200B1 (en) | 2014-12-19 | 2016-05-03 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US20180069019A1 (en) | 2014-12-22 | 2018-03-08 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US20180047749A1 (en) | 2014-12-22 | 2018-02-15 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US9899405B2 (en) | 2014-12-22 | 2018-02-20 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US20160181117A1 (en) | 2014-12-22 | 2016-06-23 | Lam Research Corporation | Integrated etch/clean for dielectric etch applications |
US10032792B2 (en) | 2014-12-22 | 2018-07-24 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
CN104498895A (en) | 2014-12-23 | 2015-04-08 | 国家纳米科学中心 | Ultrathin silicon oxynitride film material and preparation method and application thereof |
US9922824B2 (en) | 2014-12-24 | 2018-03-20 | Tokyo Electron Limited | Method of forming silicon film |
US20160190137A1 (en) | 2014-12-26 | 2016-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Finfet structure and method for manufacturing thereof |
US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
US20160196969A1 (en) | 2015-01-06 | 2016-07-07 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
US9324846B1 (en) | 2015-01-08 | 2016-04-26 | Globalfoundries Inc. | Field plate in heterojunction bipolar transistor with improved break-down voltage |
USD753269S1 (en) | 2015-01-09 | 2016-04-05 | Asm Ip Holding B.V. | Top plate |
US20160203995A1 (en) | 2015-01-12 | 2016-07-14 | Lam Research Corporation | Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch) |
US20160204005A1 (en) | 2015-01-12 | 2016-07-14 | Applied Materials, Inc. | Support assembly for substrate backside discoloration control |
US20160211147A1 (en) | 2015-01-16 | 2016-07-21 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
US20160211166A1 (en) | 2015-01-16 | 2016-07-21 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US9396956B1 (en) | 2015-01-16 | 2016-07-19 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
US20160215387A1 (en) | 2015-01-22 | 2016-07-28 | Kennametal Inc. | Low temperature cvd coatings and applications thereof |
US20160217857A1 (en) | 2015-01-22 | 2016-07-28 | Sandisk Technologies Inc. | Adaptive multi-page programming methods and apparatus for non-volatile memory |
US20160218028A1 (en) | 2015-01-22 | 2016-07-28 | Applied Materials, Inc. | Batch Heating and Cooling Chamber or Loadlock |
US20160225607A1 (en) | 2015-01-29 | 2016-08-04 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20160222504A1 (en) | 2015-02-03 | 2016-08-04 | Asm Ip Holding B.V. | Selective deposition |
CN204629865U (en) | 2015-02-03 | 2015-09-09 | 宁波永茂电器厂 | Two unit mobile type cold blast engine |
US20160225588A1 (en) | 2015-02-03 | 2016-08-04 | Lam Research Corporation | Systems and methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films |
US20160225632A1 (en) | 2015-02-03 | 2016-08-04 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
US20160222509A1 (en) | 2015-02-04 | 2016-08-04 | Tokyo Electron Limited | Substrate processing apparatus |
US20170303382A1 (en) | 2015-02-06 | 2017-10-19 | Mks Instruments Inc. | Apparatus and Method for Plasma Ignition with a Self-Resonating Device |
US20160237559A1 (en) | 2015-02-12 | 2016-08-18 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
US20180044800A1 (en) | 2015-02-13 | 2018-02-15 | Entegris, Inc. | Coatings for enhancement of properties and performance of substrate articles and apparatus |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US9275834B1 (en) | 2015-02-20 | 2016-03-01 | Applied Materials, Inc. | Selective titanium nitride etch |
US20160245704A1 (en) | 2015-02-25 | 2016-08-25 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and thermocouple |
USD808254S1 (en) | 2015-02-25 | 2018-01-23 | Aluvision N.V. | Frame tightener |
US20170196562A1 (en) | 2015-03-06 | 2017-07-13 | Ethicon Llc | Powered surgical instrument with parameter-based firing rate |
US9808246B2 (en) | 2015-03-06 | 2017-11-07 | Ethicon Endo-Surgery, Llc | Method of operating a powered surgical instrument |
US20160256187A1 (en) | 2015-03-06 | 2016-09-08 | Ethicon Endo-Surgery, Llc | Time dependent evaluation of sensor data to determine stability, creep, and viscoelastic elements of measures |
US20160268102A1 (en) | 2015-03-11 | 2016-09-15 | Asm Ip Holding B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US20160268107A1 (en) | 2015-03-12 | 2016-09-15 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US20190157054A1 (en) | 2015-03-12 | 2019-05-23 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US20180083435A1 (en) | 2015-03-16 | 2018-03-22 | Redler Technologies Ltd. | Automatic, Highly Reliable, Fully Redundant Electronic Circuit Breaker That Reduces or Prevents Short-Circuit Overcurrent |
US20160273101A1 (en) | 2015-03-17 | 2016-09-22 | Tokyo Electron Limited | Raw material gas supply apparatus and film forming apparatus |
US20160273095A1 (en) | 2015-03-18 | 2016-09-22 | Entegris, Inc. | Articles Coated With Fluoro-Annealed Films |
USD761325S1 (en) | 2015-03-19 | 2016-07-12 | Issam N. Abed | Rear crankshaft seal housing |
US20160276212A1 (en) | 2015-03-20 | 2016-09-22 | Renesas Electronics Corporation | Method For Producing Semiconductor Device |
US20160276148A1 (en) | 2015-03-20 | 2016-09-22 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
US20160284542A1 (en) | 2015-03-25 | 2016-09-29 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20160279629A1 (en) | 2015-03-26 | 2016-09-29 | Daifuku Co., Ltd. | Storage Facility for Semiconductor Containers |
US20160284517A1 (en) | 2015-03-26 | 2016-09-29 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium |
US20180047591A1 (en) | 2015-03-26 | 2018-02-15 | Murata Machinery, Ltd. | Supporting device and supporting method for articles |
US20160281230A1 (en) | 2015-03-26 | 2016-09-29 | Lam Research Corporation | Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma |
US9640448B2 (en) | 2015-03-27 | 2017-05-02 | Tokyo Electron Limited | Film forming method, film forming apparatus, and storage medium |
US20190311894A1 (en) | 2015-03-30 | 2019-10-10 | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME |
US20150376211A1 (en) | 2015-03-30 | 2015-12-31 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME |
USD759193S1 (en) | 2015-04-01 | 2016-06-14 | Cummins Emission Solutions, Inc. | Water deflector |
US20160293609A1 (en) | 2015-04-01 | 2016-10-06 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3d nand memory devices |
US20160293398A1 (en) | 2015-04-03 | 2016-10-06 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US20160307739A1 (en) | 2015-04-14 | 2016-10-20 | Dandan Co., Ltd. | Remote plasma generator using ceramic |
USD801942S1 (en) | 2015-04-16 | 2017-11-07 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
US9691771B2 (en) | 2015-04-16 | 2017-06-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films |
US20160307740A1 (en) | 2015-04-20 | 2016-10-20 | Samsung Electronics Co., Ltd. | Substrate Processing System and Ceramic Coating Method Therefor |
USD797067S1 (en) | 2015-04-21 | 2017-09-12 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US20160312360A1 (en) | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US20160314960A1 (en) | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Plasma treatment to improve adhesion between hardmask film and silicon oxide film |
US9343297B1 (en) | 2015-04-22 | 2016-05-17 | Asm Ip Holding B.V. | Method for forming multi-element thin film constituted by at least five elements by PEALD |
US20180135172A1 (en) | 2015-04-27 | 2018-05-17 | Sumco Corporation | Susceptor, epitaxial growth device, and epitaxial wafer |
US10190701B2 (en) | 2015-05-07 | 2019-01-29 | Applied Materials, Inc. | Corrosion control for chamber components |
US20170152968A1 (en) | 2015-05-07 | 2017-06-01 | Applied Materials, Inc. | Corrosion control for chamber components |
US20180126379A1 (en) | 2015-05-11 | 2018-05-10 | The University North Carolina at Chapel Hill | Fluidic devices with nanoscale manifolds for molecular transport, related systems and methods of analysis |
US10177024B2 (en) | 2015-05-12 | 2019-01-08 | Lam Research Corporation | High temperature substrate pedestal module and components thereof |
US20160334709A1 (en) | 2015-05-13 | 2016-11-17 | Tokyo Electron Limited | Extreme ultra-violet sensitivity reduction using shrink and growth method |
USD777546S1 (en) | 2015-05-14 | 2017-01-31 | Ebara Corporation | Work holder for polishing apparatus |
US20160343612A1 (en) | 2015-05-18 | 2016-11-24 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
US20160345384A1 (en) | 2015-05-22 | 2016-11-24 | Applied Materials, Inc. | Azimuthally tunable multi-zone electrostatic chuck |
USD783351S1 (en) | 2015-05-28 | 2017-04-11 | Hitachi Kokusai Electric Inc. | Gas nozzle substrate processing apparatus |
US9428833B1 (en) | 2015-05-29 | 2016-08-30 | Lam Research Corporation | Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal |
US20160351413A1 (en) | 2015-05-29 | 2016-12-01 | Infineon Technologies Ag | Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer |
US20160358772A1 (en) | 2015-06-03 | 2016-12-08 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
US9449843B1 (en) | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
USD793572S1 (en) | 2015-06-10 | 2017-08-01 | Tokyo Electron Limited | Electrode plate for plasma processing apparatus |
US20160362783A1 (en) | 2015-06-12 | 2016-12-15 | Asm Ip Holding B.V. | Reactor system for sublimation of pre-clean byproducts and method thereof |
US20160362813A1 (en) | 2015-06-12 | 2016-12-15 | Applied Materials, Inc. | Injector for semiconductor epitaxy growth |
US10053774B2 (en) | 2015-06-12 | 2018-08-21 | Asm Ip Holding B.V. | Reactor system for sublimation of pre-clean byproducts and method thereof |
US20160365280A1 (en) | 2015-06-12 | 2016-12-15 | International Business Machines Corporation | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via |
US9847247B2 (en) | 2015-06-15 | 2017-12-19 | United Microelectronics Corp. | Method for filling gaps of semiconductor device and semiconductor device formed by the same |
US20160365414A1 (en) | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | FINFET Structures and Methods of Forming the Same |
US20160372365A1 (en) | 2015-06-16 | 2016-12-22 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
USD798248S1 (en) | 2015-06-18 | 2017-09-26 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
USD825505S1 (en) | 2015-06-18 | 2018-08-14 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
US20160372321A1 (en) | 2015-06-22 | 2016-12-22 | Veeco Instruments, Inc. | Self-Centering Wafer Carrier System For Chemical Vapor Deposition |
US20190390338A1 (en) | 2015-06-26 | 2019-12-26 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US20160376704A1 (en) | 2015-06-26 | 2016-12-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US20160379851A1 (en) | 2015-06-29 | 2016-12-29 | Bharath Swaminathan | Temperature controlled substrate processing |
TWM512254U (en) | 2015-07-02 | 2015-11-11 | Jjs Comm Co Ltd | Insulation pad structure for coaxial cable adapting head |
US20170009347A1 (en) | 2015-07-07 | 2017-01-12 | Asm Ip Holding B.V. | Thin film deposition apparatus |
US10662525B2 (en) | 2015-07-07 | 2020-05-26 | Asm Ip Holding B.V. | Thin film deposition apparatus |
US20170011950A1 (en) | 2015-07-07 | 2017-01-12 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US20170009367A1 (en) | 2015-07-09 | 2017-01-12 | Applied Materials, Inc. | Wafer electroplating chuck assembly |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US20170018477A1 (en) | 2015-07-13 | 2017-01-19 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US20170051408A1 (en) | 2015-07-17 | 2017-02-23 | Hitachi Kokusai Electric Inc. | Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium |
US20170025291A1 (en) | 2015-07-22 | 2017-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-chamber furnace for batch processing |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US20170025280A1 (en) | 2015-07-24 | 2017-01-26 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US20170022612A1 (en) | 2015-07-24 | 2017-01-26 | Air Products And Chemicals, Inc. | Methods For Depositing Group 13 Metal or Metalloid Nitride Films |
US9991138B2 (en) | 2015-07-27 | 2018-06-05 | Tokyo Electron Limited | Etching method and etching apparatus |
US20170032943A1 (en) | 2015-07-27 | 2017-02-02 | Lam Research Corporation | Time varying segmented pressure control |
US20200083469A1 (en) | 2015-07-28 | 2020-03-12 | Nexdot | Mid and far-infrared nanocrystals based photodetectors with enhanced performances |
US20180180509A1 (en) | 2015-07-29 | 2018-06-28 | Tokyo Electron Limited | Method for inspecting for leaks in gas supply system valves |
US20180105930A1 (en) | 2015-07-29 | 2018-04-19 | Korea Research Institute Of Standards And Science | Method for manufacturing two-dimensional transition metal dichalcogemide thin film |
US20170029945A1 (en) | 2015-07-29 | 2017-02-02 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
US20170033004A1 (en) | 2015-07-31 | 2017-02-02 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device |
US20170032992A1 (en) | 2015-07-31 | 2017-02-02 | Infineon Technologies Ag | Substrate carrier, a method and a processing device |
US20190085451A1 (en) | 2015-07-31 | 2019-03-21 | Versum Materials Us, Llc | Compositions and methods for depositing silicon nitride films |
US20170037513A1 (en) | 2015-08-03 | 2017-02-09 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US20170040146A1 (en) | 2015-08-03 | 2017-02-09 | Lam Research Corporation | Plasma etching device with plasma etch resistant coating |
US20170040206A1 (en) | 2015-08-04 | 2017-02-09 | Asm Ip Holding B.V. | Variable gap hard stop design |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US20170040164A1 (en) | 2015-08-05 | 2017-02-09 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
USD802472S1 (en) | 2015-08-06 | 2017-11-14 | Tokyo Electron Limited | Electrostatic chuck for semiconductor manufacturing equipment |
US20200273728A1 (en) | 2015-08-06 | 2020-08-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US20170040198A1 (en) | 2015-08-07 | 2017-02-09 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
US10950477B2 (en) | 2015-08-07 | 2021-03-16 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
US10190214B2 (en) | 2015-08-13 | 2019-01-29 | Asm Ip Holding B.V. | Deposition apparatus and deposition system having the same |
US20170044666A1 (en) | 2015-08-13 | 2017-02-16 | Asm Ip Holding B.V. | Thin film deposition apparatus |
US20170044665A1 (en) | 2015-08-13 | 2017-02-16 | Asm Ip Holding B.V. | Deposition apparatus and deposition system having the same |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US20170047446A1 (en) | 2015-08-14 | 2017-02-16 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US20170051406A1 (en) | 2015-08-17 | 2017-02-23 | Asm Ip Holding B.V. | Susceptor and substrate processing apparatus |
US20170051402A1 (en) | 2015-08-17 | 2017-02-23 | Asm Ip Holding B.V. | Susceptor and substrate processing apparatus |
USD795208S1 (en) | 2015-08-18 | 2017-08-22 | Tokyo Electron Limited | Electrostatic chuck for semiconductor manufacturing equipment |
USD803802S1 (en) | 2015-08-18 | 2017-11-28 | Tokyo Electron Limited | Electrostatic chuck for semiconductor manufacturing equipment |
US20170051405A1 (en) | 2015-08-18 | 2017-02-23 | Asm Ip Holding B.V. | Method for forming sin or sicn film in trenches by peald |
US9449987B1 (en) | 2015-08-21 | 2016-09-20 | Sandisk Technologies Llc | Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors |
US20170053811A1 (en) | 2015-08-21 | 2017-02-23 | Lam Research Corporation | Pulsing rf power in etch process to enhance tungsten gapfill performance |
US20190378711A1 (en) | 2015-08-24 | 2019-12-12 | Asm Ip Holding B.V. | FORMATION OF SiN THIN FILMS |
US20170062204A1 (en) | 2015-08-24 | 2017-03-02 | Asm Ip Holding B.V. | FORMATION OF SiN THIN FILMS |
US9523148B1 (en) | 2015-08-25 | 2016-12-20 | Asm Ip Holdings B.V. | Process for deposition of titanium oxynitride for use in integrated circuit fabrication |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US20170062209A1 (en) | 2015-08-25 | 2017-03-02 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by peald |
US20170062218A1 (en) | 2015-08-27 | 2017-03-02 | Applied Materials, Inc. | Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in pecvd system |
US20180254211A1 (en) | 2015-08-27 | 2018-09-06 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
US10121671B2 (en) | 2015-08-28 | 2018-11-06 | Applied Materials, Inc. | Methods of depositing metal films using metal oxyhalide precursors |
US20170062224A1 (en) | 2015-08-28 | 2017-03-02 | Applied Materials, Inc. | Methods of Depositing Metal Films Using Metal Oxyhalide Precursors |
US20170058402A1 (en) | 2015-08-28 | 2017-03-02 | Samsung Electronics Co., Ltd. | Shower head of combinatorial spatial atomic layer deposition apparatus |
US9455177B1 (en) | 2015-08-31 | 2016-09-27 | Dow Global Technologies Llc | Contact hole formation methods |
US20170091320A1 (en) | 2015-09-01 | 2017-03-30 | Panjiva, Inc. | Natural language processing for entity resolution |
US20170062210A1 (en) | 2015-09-01 | 2017-03-02 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers |
US20180190496A1 (en) | 2015-09-03 | 2018-07-05 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system |
USD770993S1 (en) | 2015-09-04 | 2016-11-08 | Hitachi Kokusai Electric Inc. | Reaction tube |
US9708708B2 (en) | 2015-09-09 | 2017-07-18 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device |
US20180245215A1 (en) | 2015-09-11 | 2018-08-30 | Versum Materials Us, Llc | Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films |
US9865815B2 (en) | 2015-09-24 | 2018-01-09 | Lam Research Coporation | Bromine containing silicon precursors for encapsulation layers |
US20170092469A1 (en) | 2015-09-25 | 2017-03-30 | Applied Materials, Inc. | Grooved backing plate for standing wave compensation |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US20170092535A1 (en) | 2015-09-29 | 2017-03-30 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20180166315A1 (en) | 2015-09-29 | 2018-06-14 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10312129B2 (en) | 2015-09-29 | 2019-06-04 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US20170092531A1 (en) | 2015-09-29 | 2017-03-30 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10297440B2 (en) | 2015-09-30 | 2019-05-21 | Kokusai Electric Corporation | Method of manufacturing semiconductor device |
US20170092847A1 (en) | 2015-09-30 | 2017-03-30 | Jong-uk Kim | Magnetoresistive random access memory device and method of manufacturing the same |
US20180305247A1 (en) | 2015-10-02 | 2018-10-25 | Corning Incorporated | Methods for treating a glass surface to reduce particle adhesion |
US20170104061A1 (en) | 2015-10-07 | 2017-04-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained nanowire cmos device and method of forming |
US20170103907A1 (en) | 2015-10-09 | 2017-04-13 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
US20170100742A1 (en) | 2015-10-09 | 2017-04-13 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US20170102612A1 (en) | 2015-10-13 | 2017-04-13 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
US20170107621A1 (en) | 2015-10-15 | 2017-04-20 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by peald |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US20170110601A1 (en) | 2015-10-16 | 2017-04-20 | Asm Ip Holding B.V. | Photoactive devices and materials |
US20170110313A1 (en) | 2015-10-16 | 2017-04-20 | Asm Ip Holding B.V. | Implementing atomic layer deposition for gate dielectrics |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US20190140067A1 (en) | 2015-10-21 | 2019-05-09 | Asm Ip Holding B.V. | NbMC LAYERS |
US20170114464A1 (en) | 2015-10-21 | 2017-04-27 | Tokyo Electron Limited | Vertical heat treatment apparatus |
US20170117141A1 (en) | 2015-10-21 | 2017-04-27 | Asm Ip Holding B.V. | NbMC LAYERS |
US20170114460A1 (en) | 2015-10-22 | 2017-04-27 | Asm Ip Holding B.V. | Semiconductor manufacturing system including deposition apparatus |
US20170117222A1 (en) | 2015-10-22 | 2017-04-27 | Hyuk Kim | Vertical memory devices and methods of manufacturing the same |
US20170114465A1 (en) | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | Methods Of Depositing Flowable Films Comprising SiO and SiN |
US20180312966A1 (en) | 2015-10-23 | 2018-11-01 | Applied Materials, Inc. | Methods For Spatial Metal Atomic Layer Deposition |
CN105253917A (en) | 2015-10-28 | 2016-01-20 | 昆明理工大学 | Method for preparing precursor for chemical vapor deposition of metallic rhenium |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US20170130332A1 (en) | 2015-11-09 | 2017-05-11 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
USD825614S1 (en) | 2015-11-09 | 2018-08-14 | Eaton Intelligent Power Limited | Grease cover |
USD800782S1 (en) | 2015-11-09 | 2017-10-24 | Eaton Corporation | Drive plate |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US20170133260A1 (en) * | 2015-11-11 | 2017-05-11 | Lam Research Corporation | Lift Pin Assembly and Associated Methods |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US10424476B2 (en) | 2015-11-12 | 2019-09-24 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US20170140924A1 (en) | 2015-11-12 | 2017-05-18 | Asm Ip Holding B.V. | FORMATION OF SiOCN THIN FILMS |
US20170140925A1 (en) | 2015-11-12 | 2017-05-18 | Asm Ip Holding B.V. | FORMATION OF SiOCN THIN FILMS |
US10510529B2 (en) | 2015-11-12 | 2019-12-17 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
USD787458S1 (en) | 2015-11-18 | 2017-05-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US9996004B2 (en) | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
US20170146909A1 (en) | 2015-11-20 | 2017-05-25 | Lam Research Corporation | Euv photopatterning of vapor-deposited metal oxide-containing hardmasks |
US20170148918A1 (en) | 2015-11-25 | 2017-05-25 | Applied Materials, Inc. | Materials for tensile stress and low contact resistance and method of forming |
US20180265294A1 (en) | 2015-11-27 | 2018-09-20 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, substrate container transport system and operation mechanism |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US20170154770A1 (en) | 2015-12-01 | 2017-06-01 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US20170167023A1 (en) | 2015-12-09 | 2017-06-15 | Lam Research Corporation | Silicon or silicon carbide gas injector for substrate processing systems |
US20170170033A1 (en) | 2015-12-14 | 2017-06-15 | Tdk Corporation | Mini-environment apparatus |
US20170178939A1 (en) | 2015-12-17 | 2017-06-22 | Asm Ip Holding B.V. | Substrate transport device and substrate processing apparatus |
US9812372B2 (en) | 2015-12-18 | 2017-11-07 | Samsung Electronics Co., Ltd. | Electrostatic chuck assembly, semiconductor manufacturing apparatus having the same, and method of measuring temperature of electrostatic chuck |
US20180315838A1 (en) | 2015-12-18 | 2018-11-01 | Intel Corporation | Stacked transistors |
US20170178899A1 (en) | 2015-12-18 | 2017-06-22 | Lam Research Corporation | Directional deposition on patterned structures |
US20170179036A1 (en) | 2015-12-19 | 2017-06-22 | Applied Materials, Inc. | Conformal Amorphous Silicon As Nucleation Layer For W ALD Process |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US20170175290A1 (en) | 2015-12-21 | 2017-06-22 | The Regents Of The University Of California | Growth of single crystal iii-v semiconductors on amorphous substrates |
WO2017108713A1 (en) | 2015-12-22 | 2017-06-29 | Interglass Technology Ag | Vacuum-coating system for coating lenses |
WO2017108714A1 (en) | 2015-12-22 | 2017-06-29 | Sico Technology Gmbh | Injector of silicon for the semiconductor industry |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US20160111272A1 (en) | 2015-12-28 | 2016-04-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
US20170186621A1 (en) | 2015-12-28 | 2017-06-29 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US20170186754A1 (en) | 2015-12-29 | 2017-06-29 | Asm Ip Holding B.V. | Atomic layer deposition of iii-v compounds to form v-nand devices |
US20170191685A1 (en) | 2015-12-30 | 2017-07-06 | Lam Research Corporation | Self-sustained in-situ thermal control apparatus |
US20170191159A1 (en) | 2016-01-01 | 2017-07-06 | Applied Materials, Inc. | Non-Metallic Thermal CVD/ALD Gas Injector And Purge System |
USD790041S1 (en) | 2016-01-08 | 2017-06-20 | Asm Ip Holding B.V. | Gas dispersing plate for semiconductor manufacturing apparatus |
USD802546S1 (en) | 2016-01-08 | 2017-11-14 | Asm Ip Holding B.V. | Outer wall of reactor for semiconductor manufacturing apparatus |
USD796458S1 (en) | 2016-01-08 | 2017-09-05 | Asm Ip Holding B.V. | Gas flow control plate for semiconductor manufacturing apparatus |
USD789888S1 (en) | 2016-01-08 | 2017-06-20 | Asm Ip Holding B.V. | Electrode plate for semiconductor manufacturing apparatus |
US9754818B2 (en) | 2016-01-11 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via patterning using multiple photo multiple etch |
US20190019714A1 (en) | 2016-01-19 | 2019-01-17 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
WO2017125401A1 (en) | 2016-01-21 | 2017-07-27 | Knorr-Bremse Systeme für Schienenfahrzeuge GmbH | Air supply facility |
US20170213960A1 (en) | 2016-01-26 | 2017-07-27 | Arm Ltd. | Fabrication and operation of correlated electron material devices |
US20170218515A1 (en) | 2016-01-28 | 2017-08-03 | Samsung Electronics Co., Ltd. | Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors |
US20170222008A1 (en) | 2016-01-29 | 2017-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and a method for fabricating the same |
US9496225B1 (en) | 2016-02-08 | 2016-11-15 | International Business Machines Corporation | Recessed metal liner contact with copper fill |
US20170226636A1 (en) | 2016-02-08 | 2017-08-10 | Illinois Tool Works Inc | Method and system for the localized deposit of metal on a surface |
US9570302B1 (en) | 2016-02-10 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of patterning a material layer |
US20170233868A1 (en) | 2016-02-11 | 2017-08-17 | Intermolecular, Inc. | Vapor Based Site-Isolated Processing Systems and Methods |
US20210070783A1 (en) | 2016-02-12 | 2021-03-11 | Seastar Chemicals Inc. | Organometallic compound and method |
US20170232457A1 (en) | 2016-02-15 | 2017-08-17 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and precursor gas nozzle |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US20170316940A1 (en) | 2016-02-19 | 2017-11-02 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US20190057857A1 (en) | 2016-02-19 | 2019-02-21 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls of trenches |
US20170250068A1 (en) | 2016-02-19 | 2017-08-31 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US20200321209A1 (en) | 2016-02-19 | 2020-10-08 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US20170243734A1 (en) | 2016-02-19 | 2017-08-24 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US20190003050A1 (en) | 2016-02-19 | 2019-01-03 | Merck Patent Gmbh | Deposition of Molybdenum Thin Films Using A Molybdenum Carbonyl Precursor |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9666528B1 (en) | 2016-02-23 | 2017-05-30 | International Business Machines Corporation | BEOL vertical fuse formed over air gap |
USD855089S1 (en) | 2016-02-29 | 2019-07-30 | Moldman Systems Llc | Mixer assembly |
US9748145B1 (en) | 2016-02-29 | 2017-08-29 | Globalfoundries Inc. | Semiconductor devices with varying threshold voltage and fabrication methods thereof |
US20170253968A1 (en) | 2016-03-02 | 2017-09-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US20170256417A1 (en) | 2016-03-04 | 2017-09-07 | Micron Technology, Inc. | Method of forming patterns |
US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
US20190067085A1 (en) | 2016-03-07 | 2019-02-28 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
US20170260649A1 (en) | 2016-03-09 | 2017-09-14 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US20170263438A1 (en) | 2016-03-13 | 2017-09-14 | Applied Materials, Inc. | Methods And Apparatus For Selective Dry Etch |
US20170263437A1 (en) | 2016-03-13 | 2017-09-14 | Applied Materials, Inc. | Selective Deposition Of Silicon Nitride Films For Spacer Applications |
US20170267527A1 (en) | 2016-03-15 | 2017-09-21 | Industry-Academic Cooperation Foundation, Yonsei University | Transition metal dichalcogenide alloy and method of manufacturing the same |
CN205448240U (en) | 2016-03-15 | 2016-08-10 | 核工业理化工程研究院华核新技术开发公司 | Portable self -loopa nuclear level air purifier of high -efficient type |
US20170271256A1 (en) | 2016-03-15 | 2017-09-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a stepped structure and contact wirings formed thereon |
US20170271191A1 (en) | 2016-03-17 | 2017-09-21 | Asm Ip Holding B.V. | Substrate supporting plate, thin film deposition apparatus including the same, and thin film deposition method |
US20170271143A1 (en) | 2016-03-17 | 2017-09-21 | Tokyo Electron Limited | Film Forming Method and Film Forming Apparatus |
KR101758892B1 (en) | 2016-03-18 | 2017-07-17 | 정예호 | Mini vacuum cleaner for high-efficiency low-noiser |
US20190375638A1 (en) | 2016-03-18 | 2019-12-12 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US20170267531A1 (en) | 2016-03-18 | 2017-09-21 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9837355B2 (en) | 2016-03-22 | 2017-12-05 | International Business Machines Corporation | Method for maximizing air gap in back end of the line interconnect through via landing modification |
US20170278705A1 (en) | 2016-03-23 | 2017-09-28 | Tokyo Electron Limited | Nitride film forming method and storage medium |
USD807494S1 (en) | 2016-03-24 | 2018-01-09 | Lg Electronics Inc. | Cover for air purifier with humidifier |
US10262859B2 (en) | 2016-03-24 | 2019-04-16 | Asm Ip Holding B.V. | Process for forming a film on a substrate using multi-port injection assemblies |
US20170278707A1 (en) | 2016-03-24 | 2017-09-28 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US20180151358A1 (en) | 2016-03-24 | 2018-05-31 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US20180068862A1 (en) | 2016-03-28 | 2018-03-08 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US20170287681A1 (en) | 2016-03-29 | 2017-10-05 | Tokyo Electron Limited | Substrate processing apparatus |
US20170283313A1 (en) | 2016-03-29 | 2017-10-05 | Applied Materials, Inc. | Fluoride glazes from fluorine ion treatment |
US20170283312A1 (en) | 2016-03-29 | 2017-10-05 | Applied Materials, Inc. | Low temperature fluoride glasses and glazes |
US20170287744A1 (en) | 2016-03-30 | 2017-10-05 | Shibaura Mechatronics Corporation | Substrate processing apparatus and substrate processing method |
US20190058043A1 (en) | 2016-03-30 | 2019-02-21 | Intel Corporation | Transistor gate-channel arrangements |
JP2017183242A (en) | 2016-03-31 | 2017-10-05 | 株式会社ノリタケカンパニーリミテド | PdRu ALLOY ELECTRODE MATERIAL AND PRODUCTION METHOD THEREOF |
USD810705S1 (en) | 2016-04-01 | 2018-02-20 | Veeco Instruments Inc. | Self-centering wafer carrier for chemical vapor deposition |
USD819580S1 (en) | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
US20190112711A1 (en) | 2016-04-01 | 2019-04-18 | 3M Innovative Properties Company | Roll-To-Roll Atomic Layer Deposition Apparatus and Method |
USD794753S1 (en) | 2016-04-08 | 2017-08-15 | Applied Materials, Inc. | Showerhead for a semiconductor processing chamber |
USD793526S1 (en) | 2016-04-08 | 2017-08-01 | Applied Materials, Inc. | Showerhead for a semiconductor processing chamber |
JP2016174158A (en) | 2016-04-08 | 2016-09-29 | 株式会社日立国際電気 | Substrate processing apparatus, and method for manufacturing semiconductor device |
US20170294499A1 (en) | 2016-04-12 | 2017-10-12 | Apple Inc. | Electrical Components Having Metal Traces With Protected Sidewalls |
US20170294339A1 (en) | 2016-04-12 | 2017-10-12 | Tokyo Electron Limited | METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES |
US20170301519A1 (en) | 2016-04-14 | 2017-10-19 | Fm Industries, Inc. | Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor |
US20170301542A1 (en) | 2016-04-18 | 2017-10-19 | Asm Ip Holding B.V. | Combined anneal and selective deposition process |
US20190153593A1 (en) | 2016-04-21 | 2019-05-23 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US20170306479A1 (en) | 2016-04-21 | 2017-10-26 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US20170306480A1 (en) | 2016-04-21 | 2017-10-26 | Asm Ip Holding B.V. | Deposition of metal borides |
US20170306478A1 (en) | 2016-04-21 | 2017-10-26 | Asm Ip Holding B.V. | Deposition of metal borides |
US20170306494A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
US20210296144A1 (en) | 2016-04-22 | 2021-09-23 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
US20170309528A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Dynamic wafer leveling/tilting/swiveling during a chemical vapor deposition process |
US20170314125A1 (en) | 2016-04-27 | 2017-11-02 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
US20190062917A1 (en) | 2016-04-29 | 2019-02-28 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Pressurization type method for manufacturing metal monoatomic layer, metal monoatomic layer structure, and pressurization type apparatus for manufacturing metal monoatomic layer |
US20190378916A1 (en) | 2016-05-02 | 2019-12-12 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US20170316933A1 (en) | 2016-05-02 | 2017-11-02 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US20170317194A1 (en) | 2016-05-02 | 2017-11-02 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US20180308686A1 (en) | 2016-05-02 | 2018-10-25 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10600637B2 (en) | 2016-05-06 | 2020-03-24 | Asm Ip Holding B.V. | Formation of SiOC thin films |
US20170323784A1 (en) | 2016-05-08 | 2017-11-09 | Tokyo Electron Limited | Method for depositing a planarization layer using polymerization chemical vapor deposition |
US10249577B2 (en) | 2016-05-17 | 2019-04-02 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
US20170338192A1 (en) | 2016-05-17 | 2017-11-23 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
US9680268B1 (en) | 2016-05-18 | 2017-06-13 | Itt Manufacturing Enterprises Llc | Genderless electrical connectors |
US20170338134A1 (en) | 2016-05-19 | 2017-11-23 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US20170338133A1 (en) | 2016-05-19 | 2017-11-23 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
USD849662S1 (en) | 2016-05-21 | 2019-05-28 | Worthington Industries, Inc. | Cylinder support system |
US9987747B2 (en) | 2016-05-24 | 2018-06-05 | Semes Co., Ltd. | Stocker for receiving cassettes and method of teaching a stocker robot disposed therein |
US20170342559A1 (en) | 2016-05-25 | 2017-11-30 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ald using silicon precursor and hydrocarbon precursor |
US20170345674A1 (en) | 2016-05-29 | 2017-11-30 | Tokyo Electron Limited | Method of selective silicon nitride etching |
US20190333761A1 (en) | 2016-06-01 | 2019-10-31 | Asm Ip Holding B.V. | Deposition of organic films |
US10648788B2 (en) | 2016-06-03 | 2020-05-12 | Applied Materials, Inc. | Substrate distance monitoring |
US20170350688A1 (en) | 2016-06-03 | 2017-12-07 | Applied Materials, Inc. | Substrate distance monitoring |
JP2017220011A (en) | 2016-06-07 | 2017-12-14 | 株式会社神戸製鋼所 | Laminated film, display device, and input device |
WO2017212546A1 (en) | 2016-06-07 | 2017-12-14 | 株式会社日立国際電気 | Substrate processing device, oven opening portion, semiconductor device production method and program |
CN106011785A (en) | 2016-06-07 | 2016-10-12 | 上海纳米技术及应用国家工程研究中心有限公司 | Method for preparing high-uniformity Nb-doped TiO2 transparent conducting thin film through atomic layer deposition |
US20170358670A1 (en) | 2016-06-08 | 2017-12-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Diamond on iii-nitride device |
US20170358482A1 (en) | 2016-06-08 | 2017-12-14 | Asm Ip Holding B.V. | Selective deposition of metallic films |
US10014212B2 (en) | 2016-06-08 | 2018-07-03 | Asm Ip Holding B.V. | Selective deposition of metallic films |
US10354873B2 (en) | 2016-06-08 | 2019-07-16 | Tokyo Electron Limited | Organic mandrel protection process |
US20170358445A1 (en) | 2016-06-13 | 2017-12-14 | Gvd Corporation | Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles |
USD785766S1 (en) | 2016-06-15 | 2017-05-02 | Asm Ip Holding B.V. | Shower plate |
US20170365467A1 (en) | 2016-06-15 | 2017-12-21 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
US20170369993A1 (en) | 2016-06-23 | 2017-12-28 | Applied Materials, Inc. | Non-Line of Sight Deposition of Erbium Based Plasma Resistant Ceramic Coating |
US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US20170372919A1 (en) | 2016-06-25 | 2017-12-28 | Applied Materials, Inc. | Flowable Amorphous Silicon Films For Gapfill Applications |
US20170372884A1 (en) | 2016-06-28 | 2017-12-28 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US20170373188A1 (en) | 2016-06-28 | 2017-12-28 | International Business Machines Corporation | Fabrication of a vertical fin field effect transistor with an asymmetric gate structure |
US9824893B1 (en) | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
US20160314962A1 (en) | 2016-06-30 | 2016-10-27 | American Air Liquide, Inc. | Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same |
US20190198359A1 (en) | 2016-06-30 | 2019-06-27 | Kokusai Electric Corporation | Substrate processing apparatus and method of manufacturing semiconductor device |
WO2018003072A1 (en) | 2016-06-30 | 2018-01-04 | 株式会社日立国際電気 | Substrate processing device, method for manufacturing semiconductor device, and recording medium |
US20160315168A1 (en) | 2016-06-30 | 2016-10-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Process for forming gate insulators for tft structures |
US20180005814A1 (en) | 2016-07-01 | 2018-01-04 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
WO2018008088A1 (en) | 2016-07-05 | 2018-01-11 | 株式会社日立国際電気 | Substrate treatment apparatus, gas nozzle, and semiconductor device manufacturing method |
US20180010243A1 (en) | 2016-07-06 | 2018-01-11 | Samsung Electronics Co., Ltd. | Deposition process monitoring system, and method of controlling deposition process and method of fabricating semiconductor device using the system |
USD829306S1 (en) | 2016-07-06 | 2018-09-25 | Asm Ip Holding B.V. | Shower plate |
US9812319B1 (en) | 2016-07-06 | 2017-11-07 | Asm Ip Holding B.V. | Method for forming film filled in trench without seam or void |
US20180012792A1 (en) | 2016-07-08 | 2018-01-11 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US20200224311A1 (en) | 2016-07-08 | 2020-07-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US20180010247A1 (en) | 2016-07-08 | 2018-01-11 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US20180011052A1 (en) | 2016-07-08 | 2018-01-11 | Volvo Car Corporation | Silicon carbide based field effect gas sensor for high temperature applications |
US20180102276A1 (en) | 2016-07-08 | 2018-04-12 | Asm Ip Holding B.V. | Selective deposition to form air gaps |
US20200105579A1 (en) | 2016-07-08 | 2020-04-02 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
USD793352S1 (en) | 2016-07-11 | 2017-08-01 | Asm Ip Holding B.V. | Getter plate |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
WO2018013778A1 (en) | 2016-07-14 | 2018-01-18 | Entegris, Inc. | Cvd mo deposition by using mooc14 |
US20180286668A1 (en) | 2016-07-14 | 2018-10-04 | Entegris, Inc. | CVD Mo DEPOSITION BY USING MoOCl4 |
US20180019165A1 (en) | 2016-07-14 | 2018-01-18 | Entegris, Inc. | CVD Mo DEPOSITION BY USING MoOCl4 |
US20200343134A1 (en) | 2016-07-19 | 2020-10-29 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US20180025939A1 (en) | 2016-07-19 | 2018-01-25 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US20180025907A1 (en) | 2016-07-19 | 2018-01-25 | Applied Materials, Inc. | Deposition Of Flowable Silicon-Containing Films |
US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
US20180033645A1 (en) | 2016-07-26 | 2018-02-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, lid cover and method of manufacturing semiconductor device |
US20180033625A1 (en) | 2016-07-27 | 2018-02-01 | Asm Ip Holding B.V. | Method of processing substrate |
US20180033614A1 (en) | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
WO2018020327A2 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180033679A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
WO2018020320A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20190295837A1 (en) | 2016-07-28 | 2019-09-26 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
WO2018020318A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180033616A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20200227250A1 (en) | 2016-07-28 | 2020-07-16 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
WO2018020316A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20210313167A1 (en) | 2016-07-28 | 2021-10-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US20180033674A1 (en) | 2016-07-28 | 2018-02-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US20180047621A1 (en) | 2016-08-09 | 2018-02-15 | Imec Vzw | Formation of a transition metal nitride |
US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
US9865456B1 (en) | 2016-08-12 | 2018-01-09 | Micron Technology, Inc. | Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures |
US20180053660A1 (en) | 2016-08-16 | 2018-02-22 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US20180053769A1 (en) | 2016-08-17 | 2018-02-22 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US20180057937A1 (en) | 2016-08-25 | 2018-03-01 | Asm Ip Holding B.V. | Exhaust apparatus, and substrate processing apparatus and thin film fabricating method using the same |
US10468244B2 (en) | 2016-08-30 | 2019-11-05 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
US20180057931A1 (en) | 2016-08-30 | 2018-03-01 | Rolls-Royce Corporation | Swirled flow chemical vapor deposition |
US10229851B2 (en) | 2016-08-30 | 2019-03-12 | International Business Machines Corporation | Self-forming barrier for use in air gap formation |
US20190176435A1 (en) | 2016-08-30 | 2019-06-13 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
US20180061628A1 (en) | 2016-08-31 | 2018-03-01 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US20180057934A1 (en) | 2016-08-31 | 2018-03-01 | Kennametal Inc. | Composite refractory coatings and applications thereof |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US20180061851A1 (en) | 2016-09-01 | 2018-03-01 | Asm Ip Holding B.V. | 3d stacked multilayer semiconductor memory using doped select transistor channel |
US20180068950A1 (en) | 2016-09-06 | 2018-03-08 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements |
US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
USD846008S1 (en) | 2016-09-08 | 2019-04-16 | Battlemax (Pty) Ltd. | Suction cover |
US20180076021A1 (en) | 2016-09-13 | 2018-03-15 | Tokyo Electron Limited | Substrate processing apparatus |
US9929005B1 (en) | 2016-09-26 | 2018-03-27 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
US20180087156A1 (en) | 2016-09-27 | 2018-03-29 | Tokyo Electron Limited | Gas Introduction Mechanism and Processing Apparatus |
US9870964B1 (en) | 2016-09-28 | 2018-01-16 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device by determining and selecting cooling recipe based on temperature |
US20180087152A1 (en) | 2016-09-28 | 2018-03-29 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, nozzle base, and manufacturing method for semiconductor device |
US20180090583A1 (en) | 2016-09-28 | 2018-03-29 | Samsung Electronics Co., Ltd. | Semiconductor Devices Having Reduced Contact Resistance |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
US20180097076A1 (en) | 2016-09-30 | 2018-04-05 | International Business Machines Corporation | Fully depleted soi device for reducing parasitic back gate capacitance |
US20180094351A1 (en) | 2016-09-30 | 2018-04-05 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US20180094350A1 (en) | 2016-09-30 | 2018-04-05 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US20180096821A1 (en) | 2016-10-04 | 2018-04-05 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US20180096844A1 (en) | 2016-10-05 | 2018-04-05 | Stmicroelectronics Sa | Method of gas-phase deposition by epitaxy |
US9824884B1 (en) | 2016-10-06 | 2017-11-21 | Lam Research Corporation | Method for depositing metals free ald silicon nitride films using halide-based precursors |
US9842835B1 (en) | 2016-10-10 | 2017-12-12 | International Business Machines Corporation | High density nanosheet diodes |
US20180108587A1 (en) | 2016-10-13 | 2018-04-19 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US20180105701A1 (en) | 2016-10-13 | 2018-04-19 | Applied Materials, Inc. | Chemical conversion of yttria into yttrium fluoride and yttrium oxyfluoride to develop pre-seasoned corossion resistive coating for plasma components |
US20180114680A1 (en) | 2016-10-26 | 2018-04-26 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
US20200227243A1 (en) | 2016-10-26 | 2020-07-16 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
US20180122959A1 (en) | 2016-10-27 | 2018-05-03 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US20170044664A1 (en) | 2016-10-28 | 2017-02-16 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films |
US20180158688A1 (en) | 2016-11-01 | 2018-06-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US20180122642A1 (en) | 2016-11-01 | 2018-05-03 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US20200303196A1 (en) | 2016-11-01 | 2020-09-24 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US20180119283A1 (en) | 2016-11-01 | 2018-05-03 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ald using capacitively coupled electrodes with narrow gap |
US20180122709A1 (en) | 2016-11-01 | 2018-05-03 | Asm Ip Holding B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US20190164763A1 (en) | 2016-11-01 | 2019-05-30 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
CN206145834U (en) | 2016-11-01 | 2017-05-03 | 深圳信息职业技术学院 | Movable air purification device |
US20190081072A1 (en) | 2016-11-07 | 2019-03-14 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US20190035810A1 (en) | 2016-11-07 | 2019-01-31 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US20180130701A1 (en) | 2016-11-07 | 2018-05-10 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US20190217277A1 (en) | 2016-11-09 | 2019-07-18 | Korea Research Institute Of Chemical Technology | Olefin metathesis reaction catalyst and preparation method therefor |
US20180138036A1 (en) | 2016-11-14 | 2018-05-17 | Lam Research Corporation | Method for high modulus ald sio2 spacer |
US20180135179A1 (en) | 2016-11-14 | 2018-05-17 | Tokyo Electron Limited | Gas Injector and Vertical Heat Treatment Apparatus |
US20180135173A1 (en) | 2016-11-15 | 2018-05-17 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US20180142353A1 (en) | 2016-11-18 | 2018-05-24 | Hitachi Kokusai Electric Inc. | Reaction tube structure and substrate processing apparatus |
US20180142357A1 (en) | 2016-11-21 | 2018-05-24 | Tokyo Electron Limited | Substrate processing apparatus, injector, and substrate processing method |
US20180148832A1 (en) | 2016-11-25 | 2018-05-31 | Applied Materials, Inc. | Methods for depositing flowable carbon films using hot wire chemical vapor deposition |
US20180151346A1 (en) | 2016-11-28 | 2018-05-31 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
US20180151588A1 (en) | 2016-11-28 | 2018-05-31 | Sandisk Technologies Llc | Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof |
US10186420B2 (en) | 2016-11-29 | 2019-01-22 | Asm Ip Holding B.V. | Formation of silicon-containing thin films |
US20180158716A1 (en) | 2016-12-01 | 2018-06-07 | Lam Research Corporation | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US20180155836A1 (en) | 2016-12-02 | 2018-06-07 | Asm Ip Holding B.V. | Substrate processing apparatus and method of processing substrate |
US20180155832A1 (en) | 2016-12-02 | 2018-06-07 | Asm Ip Holding B.V. | Atomic layer deposition of rhenium containing thin films |
WO2018105349A1 (en) | 2016-12-09 | 2018-06-14 | 東京エレクトロン株式会社 | Film forming method for sic film |
US20200063262A1 (en) | 2016-12-09 | 2020-02-27 | Tokyo Electron Limited | FILM FORMING METHOD FOR SiC FILM |
US20170323783A1 (en) | 2016-12-11 | 2017-11-09 | Air Liquide Advanced Materials, Inc. | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
US20180166258A1 (en) | 2016-12-14 | 2018-06-14 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20180163305A1 (en) | 2016-12-14 | 2018-06-14 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US20190273133A1 (en) | 2016-12-14 | 2019-09-05 | Intel Corporation | Transistor source/drain amorphous interlayer arrangements |
US20180172172A1 (en) | 2016-12-15 | 2018-06-21 | The Boeing Company | Fluid flow control device |
USD834686S1 (en) | 2016-12-15 | 2018-11-27 | Asm Ip Holding B.V. | Shower plate |
WO2018109552A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Semiconductor processing apparatus |
US20210071298A1 (en) | 2016-12-15 | 2021-03-11 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US20180171475A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US20200013629A1 (en) | 2016-12-15 | 2020-01-09 | Asm Ip Holding B.V. | Semiconductor processing apparatus |
US20180171472A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Shower plate structure for exhausting deposition inhibiting gas |
WO2018109554A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180173109A1 (en) | 2016-12-15 | 2018-06-21 | Imec Vzw | Lithographic Mask Layer |
WO2018109553A2 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US20180174826A1 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
WO2018109551A2 (en) | 2016-12-15 | 2018-06-21 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9960033B1 (en) | 2016-12-16 | 2018-05-01 | Asm Ip Holding B.V. | Method of depositing and etching Si-containing film |
US20180171477A1 (en) | 2016-12-19 | 2018-06-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20180174801A1 (en) | 2016-12-21 | 2018-06-21 | Ulvac Technologies, Inc. | Apparatuses and methods for surface treatment |
US20190318923A1 (en) | 2016-12-22 | 2019-10-17 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20210005449A1 (en) | 2016-12-22 | 2021-01-07 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180182618A1 (en) | 2016-12-22 | 2018-06-28 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180179625A1 (en) | 2016-12-26 | 2018-06-28 | Tokyo Electron Limited | Film forming apparatus, film forming method and heat insulating member |
US20180182613A1 (en) | 2016-12-28 | 2018-06-28 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20180187303A1 (en) | 2016-12-30 | 2018-07-05 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Lanthanide precursors and deposition of lanthanide-containing films using the same |
US20180189923A1 (en) | 2017-01-03 | 2018-07-05 | Qualcomm Incorporated | Draw call visibility stream |
US20180195174A1 (en) | 2017-01-10 | 2018-07-12 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US20180204733A1 (en) | 2017-01-18 | 2018-07-19 | Tokyo Electron Limited | Method of preferential silicon nitride etching using sulfur hexafluoride |
US20180209042A1 (en) | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
USD827592S1 (en) | 2017-01-31 | 2018-09-04 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
USD840364S1 (en) | 2017-01-31 | 2019-02-12 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
US20180223047A1 (en) | 2017-02-08 | 2018-08-09 | Versum Materials Us, Llc | Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
US20180223429A1 (en) | 2017-02-09 | 2018-08-09 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ald and peald |
US20200083054A1 (en) | 2017-02-15 | 2020-03-12 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US20180233372A1 (en) | 2017-02-15 | 2018-08-16 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US20190252196A1 (en) | 2017-02-15 | 2019-08-15 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures |
US20210013042A1 (en) | 2017-02-15 | 2021-01-14 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US20180230595A1 (en) | 2017-02-16 | 2018-08-16 | Hermes-Epitek Corporation | Vapor phase film-forming apparatus |
CN106895521A (en) | 2017-03-01 | 2017-06-27 | 大连葆光节能空调设备厂 | Constant temperature, constant humidity, permanent net quiet indoor air stream |
USD849055S1 (en) | 2017-03-02 | 2019-05-21 | Ebm-Papst Landshut Gmbh | Engine cap |
US20180258532A1 (en) | 2017-03-08 | 2018-09-13 | Kabushiki Kaisha Toshiba | Shower plate, processing apparatus, and ejection method |
US20200012081A1 (en) | 2017-03-15 | 2020-01-09 | Sony Semiconductor Solutions Corporation | Camera module, method of manufacturing the same, and electronic apparatus |
US20180269057A1 (en) | 2017-03-15 | 2018-09-20 | Versum Materials Us, Llc | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials |
US20180265972A1 (en) | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
US20180265973A1 (en) | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
US20180274098A1 (en) | 2017-03-27 | 2018-09-27 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
US20180277338A1 (en) | 2017-03-27 | 2018-09-27 | Tokyo Electron Limited | Plasma generation method, plasma processing method using the same and plasma processing apparatus |
US20180286638A1 (en) | 2017-03-28 | 2018-10-04 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrate |
US20200152750A1 (en) | 2017-03-28 | 2020-05-14 | Intel Corporation | Integrated circuit contact structures |
US20180286663A1 (en) | 2017-03-29 | 2018-10-04 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US20200118817A1 (en) | 2017-03-29 | 2020-04-16 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US20180286675A1 (en) | 2017-03-29 | 2018-10-04 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US20180286672A1 (en) | 2017-03-31 | 2018-10-04 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
WO2018178771A1 (en) | 2017-03-31 | 2018-10-04 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
US20180286711A1 (en) | 2017-03-31 | 2018-10-04 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US20180294187A1 (en) | 2017-04-10 | 2018-10-11 | Lam Research Corporation | Low resistivity films containing molybdenum |
US10017856B1 (en) | 2017-04-17 | 2018-07-10 | Applied Materials, Inc. | Flowable gapfill using solvents |
US9984869B1 (en) | 2017-04-17 | 2018-05-29 | Asm Ip Holding B.V. | Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas |
US20180308701A1 (en) | 2017-04-20 | 2018-10-25 | Lam Research Corporation | Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition |
US20200303180A1 (en) | 2017-04-25 | 2020-09-24 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US20190115206A1 (en) | 2017-04-25 | 2019-04-18 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US20180315597A1 (en) | 2017-04-27 | 2018-11-01 | Lam Research Corporation | Methods and apparatus for depositing silicon oxide on metal layers |
US20190109043A1 (en) | 2017-05-01 | 2019-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
US20180350587A1 (en) | 2017-05-05 | 2018-12-06 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
US20200294789A1 (en) | 2017-05-08 | 2020-09-17 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US20180323055A1 (en) | 2017-05-08 | 2018-11-08 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US20180323059A1 (en) | 2017-05-08 | 2018-11-08 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US20180323056A1 (en) | 2017-05-08 | 2018-11-08 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US20180327892A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films for chamber components |
US20180327898A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Flourination process to create sacrificial oxy-flouride layer |
US20180327899A1 (en) | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films based on oxidation of metal flourides |
US20180331117A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof |
US20180325414A1 (en) | 2017-05-12 | 2018-11-15 | Tech4Imaging Llc | Electro-magneto volume tomography system and methodology for non-invasive volume tomography |
US20200066512A1 (en) | 2017-05-16 | 2020-02-27 | Asm Ip Holding B.V. | Selective peald of oxide on dielectric |
US20180337087A1 (en) | 2017-05-18 | 2018-11-22 | Micron Technology, Inc. | Semiconductor Constructions Comprising Dielectric Material, and Methods of Forming Dielectric Fill Within Openings Extending into Semiconductor Constructions |
US10763139B2 (en) | 2017-05-23 | 2020-09-01 | Tokyo Electron Limited | Vacuum transfer module and substrate processing apparatus |
US20180350653A1 (en) | 2017-05-30 | 2018-12-06 | Asm Ip Holding B.V. | Substrate supporting device and substrate processing apparatus including the same |
US20180350620A1 (en) | 2017-05-31 | 2018-12-06 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US20180350588A1 (en) | 2017-06-02 | 2018-12-06 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US20180358222A1 (en) | 2017-06-08 | 2018-12-13 | Applied Materials, Inc. | High-density low temperature carbon films for hardmask and other patterning applications |
US20180355480A1 (en) | 2017-06-12 | 2018-12-13 | Asm Ip Holding B.V. | Heater block having continuous concavity |
US20180363131A1 (en) | 2017-06-15 | 2018-12-20 | Samsung Electronics Co., Ltd. | Tungsten precursor and method of forming tungsten containing layer using the same |
US20180363139A1 (en) | 2017-06-20 | 2018-12-20 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US20180371610A1 (en) | 2017-06-22 | 2018-12-27 | Kennametal Inc. | Cvd composite refractory coatings and applications thereof |
US20200283894A1 (en) | 2017-06-23 | 2020-09-10 | Merck Patent Gmbh | Methods Of Atomic Layer Deposition For Selective Film Growth |
US20190003052A1 (en) | 2017-06-28 | 2019-01-03 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US20190006797A1 (en) | 2017-06-29 | 2019-01-03 | Commscope Technologies Llc | Inner contact for coaxial cable |
US20190013199A1 (en) | 2017-07-05 | 2019-01-10 | Asm Ip Holding B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US20190019670A1 (en) | 2017-07-13 | 2019-01-17 | Asm Ip Holding B.V. | Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber |
US20200343358A1 (en) | 2017-07-18 | 2020-10-29 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US20190027573A1 (en) | 2017-07-18 | 2019-01-24 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US20200083375A1 (en) | 2017-07-19 | 2020-03-12 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
US20190027605A1 (en) | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
US20190027584A1 (en) | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for selectively depositing a group iv semiconductor and related semiconductor device structures |
US20190027583A1 (en) | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
TWM553518U (en) | 2017-07-20 | 2017-12-21 | Green Wind Technology Co Ltd | Motor insulation structure |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US20200173020A1 (en) | 2017-07-26 | 2020-06-04 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US20190032998A1 (en) | 2017-07-26 | 2019-01-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US20190035605A1 (en) | 2017-07-26 | 2019-01-31 | Asm Ip Holding B.V. | Method of depositing film by peald using negative bias |
US20190032209A1 (en) | 2017-07-26 | 2019-01-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
USD859136S1 (en) | 2017-07-31 | 2019-09-10 | Ge Healthcare Bio-Sciences Corp. | Tubing clamp |
USD867867S1 (en) | 2017-07-31 | 2019-11-26 | Ge Healthcare Bio-Sciences Corp. | Tubing clamp |
US20190035647A1 (en) | 2017-07-31 | 2019-01-31 | Asm Ip Holding B.V. | Substrate processing device |
US20190035698A1 (en) | 2017-07-31 | 2019-01-31 | Tokyo Electron Limited | Processing apparatus and processing method |
US10361366B2 (en) | 2017-08-03 | 2019-07-23 | Tokyo Electron Limited | Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making |
US20190040529A1 (en) | 2017-08-04 | 2019-02-07 | Asm Ip Holding B.V. | Showerhead assembly for distributing a gas within a reaction chamber and a method for controlling the temperature uniformity of a showerhead assembly |
US20200273729A1 (en) | 2017-08-08 | 2020-08-27 | Asm Ip Holding B.V. | Radiation shield |
US20190046947A1 (en) | 2017-08-08 | 2019-02-14 | H Quest Vanguard, Inc. | Non-Thermal Micro-Plasma Conversion of Hydrocarbons |
US20200365444A1 (en) | 2017-08-08 | 2020-11-19 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US20190051544A1 (en) | 2017-08-08 | 2019-02-14 | Asm Ip Holding B.V. | Radiation shield |
US20190051555A1 (en) | 2017-08-08 | 2019-02-14 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US20190115237A1 (en) | 2017-08-09 | 2019-04-18 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US20200258766A1 (en) | 2017-08-09 | 2020-08-13 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
WO2019030565A1 (en) | 2017-08-09 | 2019-02-14 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US20190051548A1 (en) | 2017-08-09 | 2019-02-14 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US20190057858A1 (en) | 2017-08-18 | 2019-02-21 | Lam Research Corporation | Geometrically selective deposition of a dielectric film |
US20190067004A1 (en) | 2017-08-22 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US20190066997A1 (en) | 2017-08-29 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US20190066978A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20190067003A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures |
US20190067016A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method |
US20190067014A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor device structures |
US20190067094A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US20190067095A1 (en) | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method |
US20210313182A1 (en) | 2017-08-30 | 2021-10-07 | Asm Ip Holding B.V. | Layer forming method |
US20210151352A1 (en) | 2017-08-30 | 2021-05-20 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10622236B2 (en) | 2017-08-30 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for handling wafer carrier doors |
US10106892B1 (en) | 2017-08-31 | 2018-10-23 | Globalfoundries Inc. | Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same |
US20190062907A1 (en) | 2017-08-31 | 2019-02-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20190078206A1 (en) | 2017-09-08 | 2019-03-14 | Applied Materials, Inc. | Fluorinated rare earth oxide ald coating for chamber productivity enhancement |
US20190080903A1 (en) | 2017-09-13 | 2019-03-14 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
US20200270749A1 (en) | 2017-09-14 | 2020-08-27 | Versum Materials Us, Llc | Compositions and methods for depositing silicon-containing films |
CN107675144A (en) | 2017-09-15 | 2018-02-09 | 武汉华星光电技术有限公司 | Plasma enhanced chemical vapor deposition unit |
US20200227325A1 (en) | 2017-09-18 | 2020-07-16 | Asm Ip Holding B.V. | Method for forming a semiconductor device structure and related semiconductor device structures |
US20190088555A1 (en) | 2017-09-18 | 2019-03-21 | Asm Ip Holding B.V. | Method for forming a semiconductor device structure and related semiconductor device structures |
KR20190032077A (en) | 2017-09-19 | 2019-03-27 | 서울과학기술대학교 산학협력단 | Remote plasma-based atomic layer deposition system |
US20190086807A1 (en) | 2017-09-21 | 2019-03-21 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US20190089143A1 (en) | 2017-09-21 | 2019-03-21 | Accessesp Uk Limited | Stress control cones for downhole electrical power system tubing encapsulated power cables |
US20190093221A1 (en) | 2017-09-22 | 2019-03-28 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US20200279758A1 (en) | 2017-09-28 | 2020-09-03 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US20190096708A1 (en) | 2017-09-28 | 2019-03-28 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US20200052089A1 (en) | 2017-09-29 | 2020-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap-filling germanium through selective bottom-up growth |
US20200013626A1 (en) | 2017-10-05 | 2020-01-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US20190109009A1 (en) | 2017-10-05 | 2019-04-11 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US20210296130A1 (en) | 2017-10-05 | 2021-09-23 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US20190109002A1 (en) | 2017-10-10 | 2019-04-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US20190272993A1 (en) | 2017-10-10 | 2019-09-05 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US20190115451A1 (en) | 2017-10-17 | 2019-04-18 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor device |
US20210134588A1 (en) | 2017-10-30 | 2021-05-06 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US20190131124A1 (en) | 2017-10-30 | 2019-05-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US20190148556A1 (en) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with source/drain multi-layer structure and method for forming the same |
US20190148177A1 (en) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for processing substrates or wafers |
US20190148398A1 (en) | 2017-11-16 | 2019-05-16 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US20190148224A1 (en) | 2017-11-16 | 2019-05-16 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US20190157067A1 (en) | 2017-11-19 | 2019-05-23 | Applied Materials, Inc. | Methods For ALD Of Metal Oxides On Metal Surfaces |
US20200402846A1 (en) | 2017-11-20 | 2020-12-24 | Lam Research Corporation | Self-limiting growth |
US20190163056A1 (en) | 2017-11-24 | 2019-05-30 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US20210247693A1 (en) | 2017-11-24 | 2021-08-12 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US20200284467A1 (en) | 2017-11-27 | 2020-09-10 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US20200350193A1 (en) | 2017-11-27 | 2020-11-05 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US20190172714A1 (en) | 2017-12-01 | 2019-06-06 | Applied Materials, Inc. | Highly etch selective amorphous carbon film |
US20190172701A1 (en) | 2017-12-04 | 2019-06-06 | Asm Ip Holding Bv | UNIFORM DEPOSITION OF SiOC ON DIELECTRIC AND METAL SURFACES |
US10229985B1 (en) | 2017-12-04 | 2019-03-12 | International Business Machines Corporation | Vertical field-effect transistor with uniform bottom spacer |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US20190181002A1 (en) | 2017-12-12 | 2019-06-13 | Asm Ip Holding B.V. | Method for manufacturing semiconductor device |
US20190185999A1 (en) | 2017-12-15 | 2019-06-20 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US20210265134A1 (en) | 2017-12-19 | 2021-08-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US20190189447A1 (en) | 2017-12-19 | 2019-06-20 | Lam Research Corporation | Method for forming square spacers |
US20190198297A1 (en) | 2017-12-21 | 2019-06-27 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
US20190198571A1 (en) | 2017-12-21 | 2019-06-27 | International Business Machines Corporation | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element |
US20190204029A1 (en) | 2017-12-28 | 2019-07-04 | Asm Ip Holding B.V. | Cooling system, substrate processing system and flow rate adjusting method for cooling medium |
US10204788B1 (en) | 2018-01-01 | 2019-02-12 | United Microelectronics Corp. | Method of forming high dielectric constant dielectric layer by atomic layer deposition |
US20190211450A1 (en) | 2018-01-10 | 2019-07-11 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
US20190221433A1 (en) | 2018-01-16 | 2019-07-18 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US20210066084A1 (en) | 2018-01-16 | 2021-03-04 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US20210233772A1 (en) | 2018-01-19 | 2021-07-29 | Asm Ip Holding B.V. | Deposition method |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US10332747B1 (en) | 2018-01-24 | 2019-06-25 | Globalfoundries Inc. | Selective titanium nitride deposition using oxides of lanthanum masks |
CN108389798A (en) | 2018-01-24 | 2018-08-10 | 信利(惠州)智能显示有限公司 | Lithographic method, low-temperature polysilicon film transistor and AMOLED panel |
US20190229008A1 (en) * | 2018-01-25 | 2019-07-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US20190237325A1 (en) | 2018-01-26 | 2019-08-01 | Applied Materials, Inc. | Carbon film gapfill for patterning application |
US20190233940A1 (en) | 2018-01-26 | 2019-08-01 | Applied Materials, Inc. | Treatment methods for silicon nitride thin films |
US10332963B1 (en) | 2018-01-29 | 2019-06-25 | Globalfoundries Inc. | Uniformity tuning of variable-height features formed in trenches |
US20190233446A1 (en) | 2018-01-30 | 2019-08-01 | Versum Materials Us, Llc | Organoamino-Functionalized Cyclic Oligosiloxanes for Deposition of Silicon-Containing Films |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US20190237327A1 (en) | 2018-02-01 | 2019-08-01 | Asm Ip Holding B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
TWD196097S (en) | 2018-02-01 | 2019-02-21 | 荷蘭商ASM知識產權私人 | Gas supply plate for semiconductor manufacturing apparatus |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US20190244803A1 (en) | 2018-02-06 | 2019-08-08 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US20210313170A1 (en) | 2018-02-06 | 2021-10-07 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US20190249303A1 (en) | 2018-02-09 | 2019-08-15 | Asm Ip Holding B.V. | Chemical precursors and methods for depositing a silicon oxide film on a substrate utilizing chemical precursors |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US20190252195A1 (en) | 2018-02-14 | 2019-08-15 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US20210095372A1 (en) | 2018-02-14 | 2021-04-01 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US20210066083A1 (en) | 2018-02-14 | 2021-03-04 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US20190249300A1 (en) | 2018-02-15 | 2019-08-15 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US20200340113A1 (en) | 2018-02-15 | 2020-10-29 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US20190259611A1 (en) | 2018-02-20 | 2019-08-22 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US20190259612A1 (en) | 2018-02-20 | 2019-08-22 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US20210180189A1 (en) | 2018-02-23 | 2021-06-17 | Asm Ip Holding B. V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US20190264324A1 (en) | 2018-02-23 | 2019-08-29 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US20190271078A1 (en) | 2018-03-01 | 2019-09-05 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US20190272981A1 (en) | 2018-03-02 | 2019-09-05 | Lam Research Corporation | Quartz component with protective coating |
US20190276934A1 (en) | 2018-03-09 | 2019-09-12 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for monitoring and controlling a semiconductor processing apparatus |
US20190287769A1 (en) | 2018-03-16 | 2019-09-19 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US20210028021A1 (en) | 2018-03-27 | 2021-01-28 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US20190304790A1 (en) | 2018-03-27 | 2019-10-03 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US20190304780A1 (en) | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US20190301014A1 (en) | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20190304821A1 (en) | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US20190304776A1 (en) | 2018-03-30 | 2019-10-03 | Asm Ip Holding B.V. | Substrate processing method |
US20190311940A1 (en) | 2018-04-09 | 2019-10-10 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
JP6519897B2 (en) | 2018-04-10 | 2019-05-29 | シンフォニアテクノロジー株式会社 | Purge nozzle unit, load port |
US20190319100A1 (en) | 2018-04-12 | 2019-10-17 | Sandisk Technologies Llc | Three-dimensional memory device including germanium-containing vertical channels and method of making the same |
US20190318910A1 (en) | 2018-04-17 | 2019-10-17 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US20190322812A1 (en) | 2018-04-19 | 2019-10-24 | International Business Machines Corporation | Polymerizable self-assembled monolayers for use in atomic layer deposition |
US20190333753A1 (en) | 2018-04-30 | 2019-10-31 | Asm Ip Holding B.V. | PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) OF SiN USING SILICON-HYDROHALIDE PRECURSORS |
US20190330740A1 (en) | 2018-04-30 | 2019-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20190338418A1 (en) | 2018-05-03 | 2019-11-07 | Applied Materials, Inc. | Halogen resistant coatings and methods of making and using thereof |
US20210238736A1 (en) | 2018-05-03 | 2021-08-05 | Lam Research Corporation | Method of depositing tungsten and other metals in 3d nand structures |
US20190346300A1 (en) | 2018-05-08 | 2019-11-14 | Asm Ip Holding B.V. | Thin film forming method |
US20190348273A1 (en) | 2018-05-08 | 2019-11-14 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US20190348261A1 (en) | 2018-05-09 | 2019-11-14 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
US20190348515A1 (en) | 2018-05-11 | 2019-11-14 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
WO2019214578A1 (en) | 2018-05-11 | 2019-11-14 | 北京北方华创微电子装备有限公司 | Door opening apparatus, transmission chamber and semiconductor processing device |
WO2019217749A1 (en) | 2018-05-11 | 2019-11-14 | Lam Research Corporation | Methods for making euv patternable hard masks |
US20210013034A1 (en) | 2018-05-11 | 2021-01-14 | Lam Research Corporation | Methods for making euv patternable hard masks |
US20210328036A1 (en) | 2018-05-11 | 2021-10-21 | Asm Ip Holding B.V. | Method for forming a doped metal carbide film on a substrate and related semiconductor device structures |
US20190363015A1 (en) | 2018-05-22 | 2019-11-28 | International Business Machines Corporation | Self-aligned gate contact isolation |
AT520629A4 (en) | 2018-05-22 | 2019-06-15 | Sico Tech Gmbh | Injector made of silicon for the semiconductor industry |
US20190362970A1 (en) | 2018-05-24 | 2019-11-28 | Yangtze Memory Technologies Co., Ltd. | Methods for repairing substrate lattice and selective epitaxy processing |
US20190362989A1 (en) | 2018-05-25 | 2019-11-28 | Applied Materials, Inc. | Substrate manufacturing apparatus and methods with factory interface chamber heating |
US20190363006A1 (en) | 2018-05-28 | 2019-11-28 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US20190368040A1 (en) | 2018-06-01 | 2019-12-05 | Asm Ip Holding B.V. | Infiltration apparatus and methods of infiltrating an infiltrateable material |
WO2019229537A2 (en) | 2018-06-01 | 2019-12-05 | Asm Ip Holding B.V. | Infiltration apparatus and methods of infiltrating an infiltrateable material |
US20190371640A1 (en) | 2018-06-04 | 2019-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US20190368041A1 (en) | 2018-06-04 | 2019-12-05 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US20190376180A1 (en) | 2018-06-08 | 2019-12-12 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US20190385907A1 (en) | 2018-06-19 | 2019-12-19 | Applied Materials, Inc. | High Bias Deposition of High Quality Gapfill |
US20190393304A1 (en) | 2018-06-20 | 2019-12-26 | International Business Machines Corporation | DIELECTRIC ISOLATION AND SiGe CHANNEL FORMATION FOR INTEGRATION IN CMOS NANOSHEET CHANNEL DEVICES |
US20190393308A1 (en) | 2018-06-21 | 2019-12-26 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US20190390343A1 (en) | 2018-06-21 | 2019-12-26 | Asm Ip Holding B.V. | Substrate processing system |
US20200395444A1 (en) | 2018-06-21 | 2020-12-17 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US10483154B1 (en) | 2018-06-22 | 2019-11-19 | Globalfoundries Inc. | Front-end-of-line device structure and method of forming such a front-end-of-line device structure |
US20210269914A1 (en) | 2018-06-27 | 2021-09-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US20210317576A1 (en) | 2018-06-27 | 2021-10-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US20200002811A1 (en) | 2018-06-29 | 2020-01-02 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US20210273109A1 (en) | 2018-06-29 | 2021-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US20200002812A1 (en) | 2018-06-29 | 2020-01-02 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US20200224309A1 (en) | 2018-06-29 | 2020-07-16 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US20200013612A1 (en) | 2018-07-03 | 2020-01-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20200365391A1 (en) | 2018-07-03 | 2020-11-19 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20200013613A1 (en) | 2018-07-03 | 2020-01-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20200373152A1 (en) | 2018-07-03 | 2020-11-26 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20200355296A1 (en) | 2018-07-16 | 2020-11-12 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US20200018421A1 (en) | 2018-07-16 | 2020-01-16 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US20210140043A1 (en) | 2018-07-26 | 2021-05-13 | Lam Research Corporation | Deposition of pure metal films |
US20200035489A1 (en) | 2018-07-30 | 2020-01-30 | Applied Materials, Inc. | Method of selective silicon germanium epitaxy at low temperatures |
US11018003B2 (en) | 2018-07-30 | 2021-05-25 | Applied Materials, Inc. | Method of selective silicon germanium epitaxy at low temperatures |
CN109000352A (en) | 2018-08-03 | 2018-12-14 | 珠海格力电器股份有限公司 | Air duct module, air duct structure with same and air conditioner |
US20210310125A1 (en) | 2018-08-06 | 2021-10-07 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US20200040458A1 (en) | 2018-08-06 | 2020-02-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US20200048768A1 (en) | 2018-08-09 | 2020-02-13 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US20200052056A1 (en) | 2018-08-13 | 2020-02-13 | Samsung Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing an organic light emitting diode display device |
CN108910843A (en) | 2018-08-13 | 2018-11-30 | 中国工程物理研究院化工材料研究所 | A kind of preparation method of propellant fuel |
US20200058469A1 (en) | 2018-08-14 | 2020-02-20 | Tokyo Electron Limited | Systems and methods of control for plasma processing |
US20200056282A1 (en) | 2018-08-16 | 2020-02-20 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US10510871B1 (en) | 2018-08-16 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US20200066552A1 (en) | 2018-08-22 | 2020-02-27 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US20200064737A1 (en) | 2018-08-23 | 2020-02-27 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10590531B1 (en) | 2018-09-04 | 2020-03-17 | Kokusai Electric Corporation | Substrate processing apparatus, and method of manufacturing semiconductor device |
US20200080200A1 (en) | 2018-09-11 | 2020-03-12 | Asm Ip Holding B.V. | Thin film deposition method |
US20210272821A1 (en) | 2018-09-11 | 2021-09-02 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20200105895A1 (en) | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capping Layers in Metal Gates of Transistors |
US20200105594A1 (en) | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cobalt Fill for Gate Structures |
US20200102653A1 (en) | 2018-10-01 | 2020-04-02 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US20210108328A1 (en) | 2018-10-03 | 2021-04-15 | Asm Ip Holding B.V. | Susceptor having cf coating |
US20200111690A1 (en) | 2018-10-03 | 2020-04-09 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20200111669A1 (en) | 2018-10-04 | 2020-04-09 | Asm Ip Holding B.V. | Method for depositing oxide film by peald using nitrogen |
US20200109472A1 (en) | 2018-10-08 | 2020-04-09 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US20200118815A1 (en) | 2018-10-11 | 2020-04-16 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic cvd |
US20200119038A1 (en) | 2018-10-11 | 2020-04-16 | Micron Technology, Inc. | Semiconductor devices and systems with channel openings or pillars extending through a tier stack, and methods of formation |
US20200118811A1 (en) | 2018-10-16 | 2020-04-16 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US20200126771A1 (en) | 2018-10-19 | 2020-04-23 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US20200126840A1 (en) | 2018-10-19 | 2020-04-23 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD864134S1 (en) | 2018-10-24 | 2019-10-22 | Asm Ip Holding B.V. | Susceptor |
US20200131634A1 (en) | 2018-10-26 | 2020-04-30 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
US20200135915A1 (en) | 2018-10-30 | 2020-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices and semiconductor devices |
US20200135512A1 (en) | 2018-10-31 | 2020-04-30 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US20210320020A1 (en) | 2018-10-31 | 2021-10-14 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US20200141003A1 (en) | 2018-11-02 | 2020-05-07 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US20200140995A1 (en) | 2018-11-06 | 2020-05-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US20200144058A1 (en) | 2018-11-07 | 2020-05-07 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US20200152473A1 (en) | 2018-11-13 | 2020-05-14 | Tokyo Electron Limited | Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning |
US20210005723A1 (en) | 2018-11-16 | 2021-01-07 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US20200161129A1 (en) | 2018-11-16 | 2020-05-21 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US20200161438A1 (en) | 2018-11-16 | 2020-05-21 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US20210005450A1 (en) | 2018-11-16 | 2021-01-07 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US20200168485A1 (en) | 2018-11-28 | 2020-05-28 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US20200176246A1 (en) | 2018-11-30 | 2020-06-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US20200176244A1 (en) | 2018-12-04 | 2020-06-04 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US20200181770A1 (en) | 2018-12-05 | 2020-06-11 | Asm Ip Holding B.V. | Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method |
WO2020118100A1 (en) | 2018-12-05 | 2020-06-11 | Lam Research Corporation | Void free low stress fill |
US20200185257A1 (en) | 2018-12-06 | 2020-06-11 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate transfer method |
US20200185249A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Ground electrode formed in an electrostatic chuck for a plasma processing chamber |
US20200194268A1 (en) | 2018-12-13 | 2020-06-18 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US20200194253A1 (en) | 2018-12-14 | 2020-06-18 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US20200203157A1 (en) | 2018-12-20 | 2020-06-25 | Nanya Technology Corporation | Method for preparing multiplayer structure |
USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
US20200232096A1 (en) | 2019-01-17 | 2020-07-23 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US20200234989A1 (en) | 2019-01-22 | 2020-07-23 | Asm Ip Holding B.V. | Substrate processing device |
US10704143B1 (en) | 2019-01-25 | 2020-07-07 | Asm Ip Holding B.V. | Oxide film forming method |
US20200251328A1 (en) | 2019-02-01 | 2020-08-06 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US20200266208A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-d nand applications |
US20200266097A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US20200266057A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US20200266098A1 (en) | 2019-02-20 | 2020-08-20 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US20200270752A1 (en) | 2019-02-22 | 2020-08-27 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
USD881338S1 (en) | 2019-02-26 | 2020-04-14 | Ziyong Chen | Filter |
US20200286725A1 (en) | 2019-03-08 | 2020-09-10 | Asm Ip Holding B.V. | STRUCTURE INCLUDING SiOC LAYER AND METHOD OF FORMING SAME |
US20200286726A1 (en) | 2019-03-08 | 2020-09-10 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US20200283893A1 (en) | 2019-03-08 | 2020-09-10 | Asm Ip Holding B.V. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
US20200312681A1 (en) | 2019-03-28 | 2020-10-01 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20200309455A1 (en) | 2019-03-28 | 2020-10-01 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US20200312652A1 (en) | 2019-04-01 | 2020-10-01 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US20200318237A1 (en) | 2019-04-05 | 2020-10-08 | Asm Ip Holding B.V. | Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process |
US20200332416A1 (en) | 2019-04-19 | 2020-10-22 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US20200340138A1 (en) | 2019-04-24 | 2020-10-29 | Asm Ip Holding B.V. | Gas-phase reactor system and method of using same |
US20200354836A1 (en) | 2019-05-07 | 2020-11-12 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US20210043444A1 (en) | 2019-05-07 | 2021-02-11 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US20200357631A1 (en) | 2019-05-10 | 2020-11-12 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US20200365433A1 (en) | 2019-05-16 | 2020-11-19 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US20200365434A1 (en) | 2019-05-16 | 2020-11-19 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US20200385867A1 (en) | 2019-06-06 | 2020-12-10 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US20200385868A1 (en) | 2019-06-06 | 2020-12-10 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US20200385861A1 (en) | 2019-06-10 | 2020-12-10 | Asm Ip Holding B.V. | Method for cleaning quartz epitaxial chambers |
US20200395209A1 (en) | 2019-06-11 | 2020-12-17 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US20200395199A1 (en) | 2019-06-14 | 2020-12-17 | Asm Ip Holding B.V. | Substrate treatment apparatus and method of cleaning inside of chamber |
US20210002762A1 (en) | 2019-07-03 | 2021-01-07 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US20210013010A1 (en) | 2019-07-09 | 2021-01-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US20210013037A1 (en) | 2019-07-09 | 2021-01-14 | Asm Ip Holding B.V. | Structure including a photoresist underlayer and method of forming same |
US20210013085A1 (en) | 2019-07-10 | 2021-01-14 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US20210020470A1 (en) | 2019-07-16 | 2021-01-21 | Asm Ip Holding B.V. | Substrate processing device |
US20210020429A1 (en) | 2019-07-17 | 2021-01-21 | ASM IP Holding B.V | Methods of forming silicon germanium structures |
US20210020467A1 (en) | 2019-07-17 | 2021-01-21 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US20210017648A1 (en) | 2019-07-18 | 2021-01-21 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam, structures formed using the method and reactor system for performing the method |
US20210020432A1 (en) | 2019-07-19 | 2021-01-21 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US20210020431A1 (en) | 2019-07-19 | 2021-01-21 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US20210035802A1 (en) | 2019-07-29 | 2021-02-04 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US20210035854A1 (en) | 2019-07-29 | 2021-02-04 | Asm Ip Holding B.V. | Method of forming a structure using fluorine removal |
US20210033977A1 (en) | 2019-07-30 | 2021-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US20210035786A1 (en) | 2019-07-30 | 2021-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210035785A1 (en) | 2019-07-30 | 2021-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210035841A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210035839A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210035840A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210035842A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Cassette lid opening device |
US20210035824A1 (en) | 2019-07-31 | 2021-02-04 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210041284A1 (en) | 2019-08-05 | 2021-02-11 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
US20210040613A1 (en) | 2019-08-09 | 2021-02-11 | Asm Ip Holding B.V. | Heater assembly including cooling apparatus and method of using same |
US20210040615A1 (en) | 2019-08-09 | 2021-02-11 | Asm Ip Holding B.V. | Temperature-controlled chemical delivery system and reactor system including same |
US20210050231A1 (en) | 2019-08-14 | 2021-02-18 | Asm Ip Holding B.V. | Apparatus and method to process wafers |
US20210054504A1 (en) | 2019-08-21 | 2021-02-25 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US20210057275A1 (en) | 2019-08-22 | 2021-02-25 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
US20210054500A1 (en) | 2019-08-23 | 2021-02-25 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US20210057570A1 (en) | 2019-08-23 | 2021-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
US20210057223A1 (en) | 2019-08-23 | 2021-02-25 | Asm Ip Holding B. V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US20210057214A1 (en) | 2019-08-23 | 2021-02-25 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US20210066075A1 (en) | 2019-08-29 | 2021-03-04 | Asm Ip Holding B.V. | Structures including dielectric layers and methods of forming same |
US20210066080A1 (en) | 2019-09-03 | 2021-03-04 | Asm Ip Holding B.V. | Methods and apparatus for depositing a chalcogenide film and structures including the film |
US20210066079A1 (en) | 2019-09-04 | 2021-03-04 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US20210074527A1 (en) | 2019-09-05 | 2021-03-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210071296A1 (en) | 2019-09-06 | 2021-03-11 | Asm Ip Holding B.V. | Exhaust component cleaning method and substrate processing apparatus including exhaust component |
US20210082692A1 (en) | 2019-09-17 | 2021-03-18 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
US20210090878A1 (en) | 2019-09-25 | 2021-03-25 | Asm Ip Holding B.V. | Substrate processing method |
US20210104399A1 (en) | 2019-10-02 | 2021-04-08 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US20210104384A1 (en) | 2019-10-07 | 2021-04-08 | Applied Materials, Inc. | Integrated electrode and ground plane for a substrate support |
WO2021072042A1 (en) | 2019-10-08 | 2021-04-15 | Lam Research Corporation | Positive tone development of cvd euv resist films |
US20210102289A1 (en) | 2019-10-08 | 2021-04-08 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US20210102290A1 (en) | 2019-10-08 | 2021-04-08 | Asm Ip Holding B.V. | Gas injection system and reactor system including same |
US20210102292A1 (en) | 2019-10-08 | 2021-04-08 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
US20210111025A1 (en) | 2019-10-10 | 2021-04-15 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US20210111053A1 (en) | 2019-10-14 | 2021-04-15 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US20210118667A1 (en) | 2019-10-16 | 2021-04-22 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US20210118679A1 (en) | 2019-10-17 | 2021-04-22 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US20210118687A1 (en) | 2019-10-21 | 2021-04-22 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US20210125832A1 (en) | 2019-10-25 | 2021-04-29 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US20210125827A1 (en) | 2019-10-29 | 2021-04-29 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US20210134959A1 (en) | 2019-11-05 | 2021-05-06 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US20210143003A1 (en) | 2019-11-11 | 2021-05-13 | Asm Ip Holding B.V. | Method of forming a structure including silicon oxide |
US20210151315A1 (en) | 2019-11-15 | 2021-05-20 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US20210151348A1 (en) | 2019-11-20 | 2021-05-20 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US20210156024A1 (en) | 2019-11-26 | 2021-05-27 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210159077A1 (en) | 2019-11-26 | 2021-05-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US20210166925A1 (en) | 2019-11-29 | 2021-06-03 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210166924A1 (en) | 2019-11-29 | 2021-06-03 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210166940A1 (en) | 2019-12-02 | 2021-06-03 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US20210166910A1 (en) | 2019-12-02 | 2021-06-03 | Asm Ip Holding B.V. | Substrate support plate, substrate processing apparatus including the same, and substrate processing method |
US20210172064A1 (en) | 2019-12-04 | 2021-06-10 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210175052A1 (en) | 2019-12-06 | 2021-06-10 | Asm Ip Holding B.V. | Substrate processing apparatus, bevel mask and substrate processing method |
US20210180188A1 (en) | 2019-12-12 | 2021-06-17 | Asm Ip Holding B.V. | Substrate support plate, substrate processing apparatus including the same, and substrate processing method |
US20210180184A1 (en) | 2019-12-17 | 2021-06-17 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US20210193458A1 (en) | 2019-12-19 | 2021-06-24 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US20210207269A1 (en) | 2020-01-06 | 2021-07-08 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
US20210210373A1 (en) | 2020-01-06 | 2021-07-08 | Asm Ip Holding B.V. | Channeled lift pin |
US20210205758A1 (en) | 2020-01-06 | 2021-07-08 | Asm Ip Holding B.V. | Filter system for a reactor system |
US20210207270A1 (en) | 2020-01-08 | 2021-07-08 | Asm Ip Holding B.V. | Injector |
US20210214842A1 (en) | 2020-01-10 | 2021-07-15 | Applied Materials, Inc. | Catalyst enhanced seamless ruthenium gap fill |
US20210225642A1 (en) | 2020-01-16 | 2021-07-22 | Asm Ip Holding B.V. | Method of forming high aspect ratio features |
US20210225622A1 (en) | 2020-01-17 | 2021-07-22 | Asm Ip Holding B.V. | Substrate treatment apparatus and substrate treatment method for monitoring integrated value |
US20210225643A1 (en) | 2020-01-20 | 2021-07-22 | Asm Ip Holding B.V. | Method for deposition of silicon nitride layer using pretreatment, structure formed using the method, and system for performing the method |
US20210225615A1 (en) | 2020-01-20 | 2021-07-22 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US20210230746A1 (en) | 2020-01-23 | 2021-07-29 | Asm Ip Holding B.V. | Systems and methods for stabilizing reaction chamber pressure |
US20210230744A1 (en) | 2020-01-29 | 2021-07-29 | Asm Ip Holding B.V. | Contaminant trap system for a reactor system |
US20210242011A1 (en) | 2020-02-03 | 2021-08-05 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US20210239614A1 (en) | 2020-02-04 | 2021-08-05 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US20210238742A1 (en) | 2020-02-05 | 2021-08-05 | Asm Ip Holding B.V. | Method of forming a structure including carbon material, structure formed using the method, and system for forming the structure |
US20210249303A1 (en) | 2020-02-07 | 2021-08-12 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US20210246556A1 (en) | 2020-02-12 | 2021-08-12 | Asm Ip Holding B.V. | Reactor system with multi-directional reaction chamber |
US20210254216A1 (en) | 2020-02-13 | 2021-08-19 | Asm Ip Holding B.V. | Gas distribution assembly and method of using same |
US20210257509A1 (en) | 2020-02-13 | 2021-08-19 | Asm Ip Holding B.V. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
US20210257213A1 (en) | 2020-02-14 | 2021-08-19 | Asm Ip Holding B.V. | Method of forming dielectric material layers using pulsed plasma power, structures and devices including the layers, and systems for forming the layers |
US20210254238A1 (en) | 2020-02-17 | 2021-08-19 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US20210265158A1 (en) | 2020-02-25 | 2021-08-26 | Asm Ip Holding B.V. | Method of forming low-k material layer, structure including the layer, and system for forming same |
US20210268554A1 (en) | 2020-02-28 | 2021-09-02 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
US20210280448A1 (en) | 2020-03-04 | 2021-09-09 | Asm Ip Holding B.V. | Alignment fixture for a reactor system |
US20210288476A1 (en) | 2020-03-11 | 2021-09-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US20210287928A1 (en) | 2020-03-11 | 2021-09-16 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US20210285102A1 (en) | 2020-03-11 | 2021-09-16 | Applied Materials, Inc. | Gap fill methods using catalyzed deposition |
US20210287912A1 (en) | 2020-03-12 | 2021-09-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
US20210287878A1 (en) | 2020-03-13 | 2021-09-16 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20210292902A1 (en) | 2020-03-17 | 2021-09-23 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
US20210313150A1 (en) | 2020-04-02 | 2021-10-07 | Asm Ip Holding B.V. | Thin film forming method |
US20210313178A1 (en) | 2020-04-03 | 2021-10-07 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US20210320010A1 (en) | 2020-04-08 | 2021-10-14 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US20210319982A1 (en) | 2020-04-10 | 2021-10-14 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the same |
US20210320003A1 (en) | 2020-04-13 | 2021-10-14 | Asm Ip Holding B.V. | Method of forming a nitrogen-containing carbon film and system for performing the method |
US20210327715A1 (en) | 2020-04-15 | 2021-10-21 | Asm Ip Holding B.V. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
US20210324510A1 (en) | 2020-04-15 | 2021-10-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US20210327704A1 (en) | 2020-04-16 | 2021-10-21 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
US20210324518A1 (en) | 2020-04-17 | 2021-10-21 | Asm Ip Holding B.V. | Injector configured for arrangement within a reactor of a vertical furnace and vertical furnace |
US20210327714A1 (en) | 2020-04-21 | 2021-10-21 | Asm Ip Holding B.V. | Method for processing a substrate |
USD930721S1 (en) * | 2020-11-23 | 2021-09-14 | Elliot Kremerman | Circular spinner |
USD935497S1 (en) * | 2021-08-02 | 2021-11-09 | Elliot Kremerman | Spinner |
Non-Patent Citations (2609)
Title |
---|
"Fiji F200 200mm Thermal/Plasma ALD Systems: Installation and Use Manual." CAW-02635 Rev. 0.6 (Mar. 13, 2012). Cambridge NanoTech Inc. pp 1-164 (2012). |
"Polyurethane HF"; webpage; no date. Cited in Notice of References dated May 18, 2017 in U.S. Appl. No. 14/884,695. |
Akiyama et al. "Macro- and micro-scale simulation of growth rate and composition in MOCVD of yttria-stabilized zirconia" J. Crystal Growth 241, pp. 352-362 (2002). |
Alen et al. "Atomic layer deposition of molybdenum nitride thin films for cu metallizations" J of The Electrochemical Society, 152(5) G361-G366 (2005). |
Alen, "Atomic layer deposition of TaN, NbN and MoN films for Cu Metallizations," University of Helsinki Finland, 72 pages, (2005). |
Altiere et al. "Review Article: Plasma-surface interactions at the atomic scale for patterning metals" J. Vac. Sci. Technol. A 35, 05C203, 13 pages (2017). |
Ande et al. "Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride" J. Phys. Chem. Lett, 6(18), 16 pages (2015). |
Aoyagi et al. "Laser-assisted atomic layer epitaxy" Materials Science and Engineering, pp. 121-132 (1991). |
Arita et al. "Electrical and optical properties of germanium-doped zinc oxide thin films" Materials Transactions, vol. 45, No. 11, pp. 3180-3183 (2004). |
Arnold et al., "Novel single-layer vanadium sulphide phases" 2D Materials, 5, 045009, 11 pages (2018). |
Athavale et al., "Realization of Atomic Layer Etching of Silicon", Journal of Vacuum Science and Technology B, vol. 14, pp. 3702-3705 (1996). |
Atta et al. "The Catalytic Activity of Ruthenates ARuO3 (A=Ca, Sr or Ba) for the Hydrogen Evolution Reaction in Acidic Medium" Int. J. Electrochem. Sci. 7, pp. 725-746 (2012). |
Aubin et al. "Very low temperature (450°C) selective epitaxial growth of heavily in situ boron-doped SiGe layers" Semiconductor Science and Technology, 30, 10 pages (2015). |
Ballal "Mass Transfer in Porous Solids under Pulsating Pressure Conditions" SLJ International, vol. 35, Nov. 4, pp. 446-448 (1995). |
Bark et al. "Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials," Nanoscale, published online, 7 pages (2012). |
Barnscheidt et al. "Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy" Semiconductor Science and Technology, 33, 9 pages (2018). |
Barreca et al. "Cobalt oxide nanomaterials by vapor phase synthesis for fast and reversible lithium storage" J Phys Chem C,114, 10054-10060 (2010). |
Basuvalingam et al. "NS-WeA6—Low Temperature ALD for Phase-controlled Synthesis of 2D Transition Metal (M=Ti, Nb) di- (MX2) and Tri- (MX3) Sulfides," AVS 19th International Conference on Atomic Layer Deposition (ALD 2019)), Jul. 22, 2019, Abstract, 1 page (2019). |
Bearzotti, et al., "Fast Humidity Response of a Metal Halide-Doped Novel Polymer," Sensors and Actuators B, 7, pp. 451-454, (1992). |
Becker et al., "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides," Chem. Mater., 16, 3497-3501 (2004). |
Belyansky et al. "Low Temperature Borophosphosilicate Glass (BPSG) Process for High Aspect Ratio Gap Fill" www.electrochem.org/dhma/201/pdfs/0705.pdf, downloaded May 15, 2021, 1 page. |
Best et al. "Complex Halides of the Transition Metals. 24.1 Reactions of Dimeric Molybdenum (II) Halide Complexes Containing Strong Metal-Metal Bonds with Bidentate Tertiary Phosphines and Arsines" Inorganic Chemistry, vol. 17, No. 1, pp. 99-104 (1978). |
Beynet et al. "Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning," Proceedings of SPIE, 7520, (2009). |
Bhatnagar et al., "Copper Interconnect Advances to Meet Moore's Law Milestones," Solid State Technology, 52, 10 (2009). |
Blakeney et al. "Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent" Chem. Mater., 30, pp. 1844-1848 (2018). |
Boscher et al., "Atmosphere Pressure Chemical Vapour Deposition of NbSe2 Thin Films on Glass" Eur. J. Inorg. Chem., pp. 1255-1259 (2006). |
Brewin et al. "UPS to deploy Bluetooth, wireless LAN network" Internet, pp. 1-5 (2001). |
Buitrago et al. "SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography" Abstract, 1 page (2016). |
Buitrago et al. "State-of-the-art EUV materials and processes for the 7 nm node and beyond" Proc of SPIE, vol. 10143, 8 pages (2017). |
Bulletin ASTRON hf-s—Mar. 2005: Type AX7645—Reactive Gas Generator. Source location: MKS Instruments, Inc. http://www.mksinst.com/. Accessed: Aug. 6, 2015. pp. 1-2 (2005). |
Bulletin ASTRONe—Apr. 2002: Type AX7680—Reactive Gas Generator. Source location: MKS Instruments, Inc. http://www.mksinst.com/. Accessed: Aug. 6, 2015. pp. 1-2 (2002). |
Bulletin ASTRONex—Jul. 2009: Type AX7685—Reactive Gas Generator. Source location: MKS Instmments, Inc. http://www.mksinst.com/. Accessed: Aug. 6, 2015. pp. 1-2 (2002). |
Bulletin ENG-XSTREAM—340-09 Om Aug. 2006: Xstream with Active Matching Network Remote Plasma Source. Advanced Energy Industries, Inc. http://www.advanced-energy.net.cn/upload/File/Sources/ENG-Xstream-340-09. pdf. Accessed: Jul. 19, 2016. pp. 1-4 (2006). |
Bulletin Plasma Source—Dec. 2002: Type AX7610—Downstream Plasma Source. Source location: MKS Instruments, Inc. http://www.mksinst.com/. Accessed: Aug. 6, 2015. pp. 1-4 (2002). |
Bulletin R*evolution—Sep. 2006: Type AX7690—Remote Plasma Source. Source location: MKS Instruments, Inc. http://www.mksinst.com/. Accessed: Aug. 6, 2015. pp. 1-2 (2006). |
Buriak, "Organometallic Chemistry on Silicon and Germanium Surfaces," Chemical Reviews, 102, 5 (2002). |
Cahiez et al. "Cobalt-Catalyzed cross coupling reaction between functionalized primary and secondary alkyl halides and aliphatic grignard reagents" Adv. Synth. Catal, 350, 1484-1488 (2008). |
Callaghan et al. "Magnetic Interactions in Ternary Ruthenium Oxides" Inorganic Chemistry, vol. 5, No. 9, pp. 1572-1576 (1966). |
Cant et al., "Chemisorption Sites on Porous Silica Glass and on Mixed-Oxide Catalysis," Can. J. Chem. 46, 1373 (1968). |
Carmalt et al., "Chemical Vapor Deposition of Niobium Disulfide Thin Films" Eur. J. Inorg. Chem., pp. 4470-4476 (2004). |
Casey et al. "Chemical Vapor Deposition of Mo onto Si" J. Electrochem. Soc.: Solid State Science, 114 (2), pp. 201-204 (1967). |
Chang et al. "Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric," IEEE Electron Device Letters, Feb. 2009, pp. 133-135; vol. 30, No. 2; IEEE Electron Device Society. |
Chatterjee et al. "Chemical Vapor Deposition of Boron Nitride Nanosheets on Metallic Substrates via Decaborane/Ammonia Reactions", Chem. Mater. 23, pp. 4414-4416 (2011). |
Chatterjee et al., "Sub-100nm Gate Length Metal Gate NMOS Transistors Fabricated by a Replacement by a Replacement Gate Process," IEEE Semiconductor Process and Device Center, 821-824 (1997). |
Chemistry Stack Exchange, "Why is CF4 Non-Polar and CHF Polar," https://chemistry.stackexchange.com/questions/31604/why-is-cf4-non-polar-and-chf3-polar, (2015). |
Chen et al., "A Self-Aligned Airgap Interconnect Scheme," IEEE International Interconnect Technology Conference, vol. 1-3, 146-148 (2009). |
Chen et al., "Develop Gap-fill Process of Shallow Trench Isolation in 450mm Wafer by Advanced Flowable CVD Technology for Sub-20nm Node," 2016 27th Annual Semi Advanced Semiconductor. |
Cheng et al. "Improved High-Temperature Leakage in High-Density MIM Capcitors by Using a TiLaO Dielectric and an Ir Electrode" IEEE Electron Device Letters, vol. 28, No. 12, 3 pages (2007). |
Cheng et al., "Effect of carrier gas on the structure and electric properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition," Thin Solid Films vol. 469-470, pp. 178-183 (2004). |
Cheremisin et al. "UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films" Phys. Status Solidi A, Applications and materials science, 206 (7), pp. 1484-1487 (2009). |
Choi et al. "UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(-H) thin films for 45 nm technology node" Current Applied Physics, 11, S109-S113 (2011). |
Choi et al., "Improvement of Silicon Direct Bonding using Surfaces Activated by Hydrogen Plasma Treatment," Journal of the Korean Physical Society, 37, 6, 878-881 (2000). |
Choi et al., "Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma," ECS Solid State Letters, 2(12) P114-P116 (2013). |
Closser et al., "Molecular Layer Deposition Of A Highly Stable Silicon Oxycarbide Thin Film Using An Organic Chlorosilane And Water," ACS Applied Materials & Interfaces 10, pp. 24266-24274 (2018). |
Closser et al., "Molecular Layer Deposition Of A Highly Stable Silicon Oxycarbide Thin Film Using An Organic Chlorosilane And Water," ACS Applied Materials & Interfaces 10, pp. 24266-24274. |
CNIPA; Notice of Allowance dated Apr. 13, 2017 in Application No. 201210201995.9. |
CNIPA; Notice of Allowance dated Apr. 27, 2020 in Application No. 201930660355.7. |
CNIPA; Notice of Allowance dated Apr. 7, 2021 in Application No. 201780044761.9. |
CNIPA; Notice of Allowance dated Apr. 7, 2021 in Application No. 202030579755.8. |
CNIPA; Notice of Allowance dated Aug. 22, 2014 in Application No. 201080020267.7. |
CNIPA; Notice of Allowance dated Aug. 26, 2015 in Application No. 201110155056.0. |
CNIPA; Notice of Allowance dated Aug. 7, 2020 in Application No. 202030053609.1. |
CNIPA; Notice of Allowance dated Dec. 10, 2020 in Application No. 202030352604.9. |
CNIPA; Notice of Allowance dated Dec. 21, 2020 in Application No. 201610982040.X. |
CNIPA; Notice of Allowance dated Dec. 27, 2019 in Application No. 201510765406.3. |
CNIPA; Notice of Allowance dated Dec. 28, 2020 in Application No. 201930704935.1. |
CNIPA; Notice of Allowance dated Jan. 3, 2017 in Application No. 201280057542.1. |
CNIPA; Notice of Allowance dated Jul. 20, 2017 in Application No. 201310412808.6. |
CNIPA; Notice of Allowance dated Jun. 14, 2019 in Application No. 201410331047.6. |
CNIPA; Notice of Allowance dated Jun. 16, 2016 in Application No. 201280057466.4. |
CNIPA; Notice of Allowance dated Jun. 2, 2020 in Application No. 202030048819.1. |
CNIPA; Notice of Allowance dated Jun. 3, 2021 in Application No. 201711057929.8. |
CNIPA; Notice of Allowance dated Mar. 30, 2021 in Application No. 201710762817.6. |
CNIPA; Notice of Allowance dated May 14, 2020 in Application No. 201930615780.4. |
CNIPA; Notice of Allowance dated May 15, 2020 in Application No. 202030048854.3. |
CNIPA; Notice of Allowance dated May 15, 2020 in Application No. 202030053560.X. |
CNIPA; Notice of Allowance dated May 20, 2020 in Application No. 202030053634.X. |
CNIPA; Notice of Allowance dated May 22, 2020 in Application No. 201610028064.1. |
CNIPA; Notice of Allowance dated May 25, 2017 in Application No. 201730010308.9. |
CNIPA; Notice of Allowance dated May 8, 2015 in Application No. 201080015699.9. |
CNIPA; Notice of Allowance dated Nov. 1, 2018 in Application No. 201830397219.9. |
CNIPA; Notice of Allowance dated Nov. 4, 2020 in Application No. 201710173292.2. |
CNIPA; Notice of Allowance dated Oct. 16, 2015 in Application No. 201080020268.1. |
CNIPA; Notice of Allowance dated Oct. 24, 2014 in Application No. 201080036764.6. |
CNIPA; Notice of Allowance dated Oct. 24, 2018 in Application No. 201830060972.9. |
CNIPA; Notice of Allowance dated Oct. 9, 2020 in Application No. 201610898822.5. |
CNIPA; Notice of Allowance dated Sep. 15, 2021 in Application No. 201810116717.0. |
CNIPA; Notice of Allowance dated Sep. 3, 2019 in Application No. 201610141027.1. |
CNIPA; Notice of Allowance dated Sep. 30, 2019 in Application No. 201510765170.3. |
CNIPA; Notice ofAllowance dated Jun. 16, 2021 in Application No. 202130111248.6. |
CNIPA; Notice ofAllowance dated Oct. 11, 2021 in Application No. 201810344382.8. |
CNIPA; Office Action dated Apr. 16, 2021 in Application No. 201810116717.0. |
CNIPA; Office Action dated Apr. 19, 2021 in Application No. 201711328250.8. |
CNIPA; Office Action dated Apr. 22, 2020 in Application No. 201810994464.7. |
CNIPA; Office Action dated Apr. 27, 2020 in Application No. 201810379112.0. |
CNIPA; Office Action dated Apr. 27, 2020 in Application No. 201810836604.8. |
CNIPA; Office Action dated Apr. 27, 2021 in Application No. 201911250100.9. |
CNIPA; Office Action dated Apr. 3, 2014 in Application No. 201080020268.1. |
CNIPA; Office Action dated Apr. 30, 2021 in Application No. 201810018936.5. |
CNIPA; Office Action dated Apr. 7, 2015 in Application No. 201080020268.1. |
CNIPA; Office Action dated Aug. 1, 2013 in Application No. 201080015699.9. |
CNIPA; Office Action dated Aug. 31, 2020 in Application No. 201780044761.9. |
CNIPA; Office Action dated Dec. 10, 2013 in Application No. 201080020267.7. |
CNIPA; Office Action dated Dec. 14, 2018 in Application No. 201410331047.6. |
CNIPA; Office Action dated Dec. 20, 2018 in Application No. 201710738549.4. |
CNIPA; Office Action dated Dec. 22, 2020 in Application No. 201910378791.4. |
CNIPA; Office Action dated Dec. 24, 2015 in Application No. 201280057466.4. |
CNIPA; Office Action dated Dec. 4, 2015 in Application No. 201210201995.9. |
CNIPA; Office Action dated Dec. 4, 2015 in Application No. 201280057542.1. |
CNIPA; Office Action dated Dec. 5, 2016 in Application No. 201310412808.6. |
CNIPA; Office Action dated Feb. 28, 2020 in Application No. 201610897958.4. |
CNIPA; Office Action dated Feb. 5, 2018 in Application No. 201410331047.6. |
CNIPA; Office Action dated Feb. 8, 2014 in Application No. 201110155056.0. |
CNIPA; Office Action dated Feb. 9, 2015 in Application No. 201110155056.0. |
CNIPA; Office Action dated Jan. 10, 2013 in Application No. 201080015699.9. |
CNIPA; Office Action dated Jan. 12, 2015 in Application No. 201080015699.9. |
CNIPA; Office Action dated Jan. 2, 2014 in Application No. 201080036764.6. |
CNIPA; Office Action dated Jan. 20, 2017 in Application No. 201210201995.9. |
CNIPA; Office Action dated Jan. 21, 2013 in Application No. 201080020268.1. |
CNIPA; Office Action dated Jan. 21, 2014 in Application No. 201080015699.9. |
CNIPA; Office Action dated Jan. 21, 2020 in Application No. 201610028064.1. |
CNIPA; Office Action dated Jan. 25, 2021 in Application No. 202030579755.8. |
CNIPA; Office Action dated Jan. 26, 2021 in Application No. 201711057929.8. |
CNIPA; Office Action dated Jan. 27, 2021 in Application No. 201780076321.1. |
CNIPA; Office Action dated Jan. 28, 2021 in Application No. 201711057557.9. |
CNIPA; Office Action dated Jan. 29, 2021 in Application No. 201780076230.8. |
CNIPA; Office Action dated Jul. 1, 2014 in Application No. 201080036764.6. |
CNIPA; Office Action dated Jul. 14, 2016 in Application No. 201210201995.9. |
CNIPA; Office Action dated Jul. 21, 2021 in Application No. 201610131743.1. |
CNIPA; Office Action dated Jul. 23, 2019 in Application No. 201610897958.4. |
CNIPA; Office Action dated Jul. 23, 2021 in Application No. 201710131319.1. |
CNIPA; Office Action dated Jul. 25, 2014 in Application No. 201080015699.9. |
CNIPA; Office Action dated Jul. 3, 2020 in Application No. 201610898822.5. |
CNIPA; Office Action dated Jul. 30, 2020 in Application No. 201810836604.8. |
CNIPA; Office Action dated Jul. 5, 2021 in Application No. 201810530514.6. |
CNIPA; Office Action dated Jul. 5, 2021 in Application No. 201911042495.3. |
CNIPA; Office Action dated Jul. 7, 2021 in Application No. 201980011788.7. |
CNIPA; Office Action dated Jun. 1, 2020 in Application No. 201710173292.2. |
CNIPA; Office Action dated Jun. 16, 2020 in Application No. 201610897958.4. |
CNIPA; Office Action dated Jun. 16, 2021 in Application No. 201810344382.8. |
CNIPA; Office Action dated Jun. 2, 2021 in Application No. 201910920881.1. |
CNIPA; Office Action dated Jun. 20, 2019 in Application No. 201711120632.1. |
CNIPA; Office Action dated Jun. 28, 2019 in Application No. 201510765170.3. |
CNIPA; Office Action dated Jun. 28, 2019 in Application No. 201510765406.3. |
CNIPA; Office Action dated Jun. 30, 2021 in Application No. 201810755771.X. |
CNIPA; Office Action dated Mar. 1, 2021 in Application No. 201710131319.1. |
CNIPA; Office Action dated Mar. 14, 2019 in Application No. 201610141027.1. |
CNIPA; Office Action dated Mar. 24, 2021 in Application No. 201880048547.5. |
CNIPA; Office Action dated Mar. 26, 2020 in Application No. 201610131743.1. |
CNIPA; Office Action dated Mar. 30, 2021 in Application No. 201610131743.1. |
CNIPA; Office Action dated May 16, 2016 in Application No. 201280057542.1. |
CNIPA; Office Action dated May 18, 2020 in Application No. 201610982040.X. |
CNIPA; Office Action dated May 19, 2021 in Application No. 201880072606.2. |
CNIPA; Office Action dated May 24, 2013 in Application No. 201080036764.6. |
CNIPA; Office Action dated May 26, 2021 in Application No. 201810215131.X. |
CNIPA; Office Action dated May 29, 2020 in Application No. 201710131319.1. |
CNIPA; Office Action dated May 31, 2021 in Application No. 201910857144.1. |
CNIPA; Office Action dated Nov. 11, 2019 in Application No. 201810379112.0. |
CNIPA; Office Action dated Nov. 20, 2020 in Application No. 201710762817.6. |
CNIPA; Office Action dated Nov. 4, 2019 in Application No. 201610898822.5. |
CNIPA; Office Action dated Oct. 16, 2020 in Application No. 201610131743.1. |
CNIPA; Office Action dated Oct. 19, 2018 in Application No. 201510765170.3. |
CNIPA; Office Action dated Oct. 31, 2018 in Application No. 201510765406.3. |
CNIPA; Office Action dated Sep. 13, 2021 in Application No. 201780076230.8. |
CNIPA; Office Action dated Sep. 13, 2021 in Application No. 201780076321.1. |
CNIPA; Office Action dated Sep. 16, 2014 in Application No. 201110155056.0. |
CNIPA; Office Action dated Sep. 23, 2014 in Application No. 201080020268.1. |
CNIPA; Office Action dated Sep. 23, 2021 in Application No. 201880048547.5. |
CNIPA; Office Action dated Sep. 26, 2013 in Application No. 201080020268.1. |
CNIPA; Office Action dated Sep. 9, 2016 in Application No. 201280057542.1. |
Coates, "Process Analytical Technology: Spectroscopic Tools and Implementation Strategies for the Chemical and Pharmaceutical Industries." Blackwell Publishing Ltd, 91-132, (2005). |
Conroy et al., "The Preparation and Properties of Single Crystals of the 1S and 2S Polymorphs of Tantalum Disulfide" J. Solid State Chemistry, 4, pp. 345-350 (1972). |
Crowell, "Chemical methods of thin film deposition: Chemical vapor deposition, atomic layer deposition, and related technologies," Journal of Vacuum Science & Technology A 21.5, (2003): S88-S95. |
Crystal IS "Application Note: Using UV Reflective Materials to Maximize Disinfection"; AN011; Jun. 16, 2016, found at https://www.klaran.com/using-uv-reflective-materials-to-maximize-disinfection. |
Crystal IS "Application Note: Using UV Reflective Materials to Maximize Disinfection"; AN011; Jun. 16, 2016. |
Cui et al., "Impact of Reductive N2/H2 Plasma on Porous Low-Dielectric Constant SiCOH Thin Films," Journal of Applied Physics 97, 113302, 1-8 (2005). |
De Silva et al., "Inorganic Hardmask Development For Extreme Ultraviolet Patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1) (2018). |
Dingemans et al. "Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties" J of the Electrochemical Society, 159(3), H277-H285 (2012). |
Dingemans et al., "Comparison Between Aluminum Oxide Surface Passivation Films Deposited with Thermal Aid," Plasma Aid and Pecvd, 35th IEEE PVCS, June (2010). |
Drummond et al., "Hydrophobic Radiofrequency Plasma-Deposited Polymer Films: Dielectric Properties and Surface Forces," Colloids and Surfaces A, 129-130, 117-129 (2006). |
Duffey et al., "Raman Scattering from 1T-TaS2" Solid State Communications 20, pp. 617-621 (1976). |
Dufond et al. "Quantifying the Extent of Ligand Incorporation and the Effect on Properties of TiO 2 Thin Films Grown by Atomic Layer Deposition Using an Alkoxide or an Alkylamide" Chemistry of Material, American Chemical Society 32(4), pp. 1393-1407 (2020). |
Dultsev et al. "Effect of UV radiation on the reactivity of porous methyl-doped SiO2 layers" Phys. Status Solidi C, 8, No. 6, pp. 1946-1949 (2011). |
Easley et al., "Thermal Isolation of Microchip Reaction Chambers for Rapid Non-Contact DNA Amplification," J. Micromech. Microeng. 17, 1758-1766 (2007). |
Elam et al., "New Insights into Sequential Infiltration Synthesis", ECS Transactions, vol. 69, pp. 147-157 (2015). |
Elers et al. "Film Uniformity in Atomic Layer Deposition," Chemical Vapor Deposition, 12, pp. 13-24 (2006). |
Ellis et al. "Nitrous Oxide (N2O) Processing for Silicon Oxynitride Gate Dielectrics." IBM Journal of Research and Development. 1999. 43[3]. pp. 287-300. (1999). |
EPO; Extended European Search Report dated Apr. 28, 2014 in Application No. 11162225.4. |
EPO; Extended European Search Report dated Apr. 6, 2021 in Application No. 21150514.4. |
EPO; Extended European Search Report dated Aug. 11, 2021 in Application No. 21169226.4. |
EPO; Extended European Search Report dated Dec. 9, 2016 in Application No. 09767208.3. |
EPO; Extended European Search Report dated Mar. 3, 2020 in Application No. 19205558.0. |
EPO; Extended European Search Report dated Nov. 29, 2019 in Application No. 19188826.2. |
EPO; Notice of Allowance dated Apr. 29, 2004 in Application No. 97929595.3. |
EPO; Notice of Allowance dated Aug. 1, 2019 in Application No. 09767208.3. |
EPO; Notice of Allowance dated Feb. 23, 2004 in Application No. 98967122.7. |
EPO; Notice of Allowance dated Feb. 3, 2015 in Application No. 11162225.4. |
EPO; Notice of Allowance dated Jan. 10, 2001 in Application No. 98911263.6. |
EPO; Notice of Allowance dated Jun. 11, 2004 in Application No. 99973123. |
EPO; Notice of Allowance dated Oct. 16, 2019 in Application No. 09836647.9. |
EPO; Notice of Allowance dated Sep. 22, 2004 in Application No. 99946447.2. |
EPO; Office Action dated Aug. 10, 2018 in Application No. 09767208.3. |
EPO; Office Action dated Feb. 18, 2004 in Application No. 97929595.3. |
EPO; Office Action dated Feb. 28, 2018 in Application No. 09836647.9. |
EPO; Office Action dated Jan. 11, 2019 in Application No. 09836647.9. |
EPO; Office Action dated Jul. 18, 2016 in Application No. 08798519.8. |
EPO; Office Action dated Jul. 19, 2004 in Application No. 99946447.2. |
EPO; Office Action dated Jul. 29, 2008 in Application No. 00902194.0. |
EPO; Office Action dated Jun. 27, 2003 in Application No. 97929595.3. |
EPO; Office Action dated Jun. 27, 2003 in Application No. 98967122.7. |
EPO; Office Action dated Jun. 6, 2001 in Application No. 98911277.6. |
EPO; Office Action dated Mar. 30, 2004 in Application No. 99946447.2. |
EPO; Office Action dated Nov. 25, 2003 in Application No. 99946447.2. |
EPO; Office Action dated Sep. 22, 2003 in Application No. 99946447.2. |
EPO; Supplementary European Search Report and Opinion dated Jan. 5, 2017 in Application No. 09836647.9. |
EPO; Supplementary European Search Report and Opinion dated Nov. 9, 2012 in Application No. 08798519.8. |
EPO; Supplementary European Search Report dated May 27, 2002 in Application No. 99973123. |
Esposito et al. "Preparation and characterization of lead ruthenate based composite cathodes for SOFC applications" Mater. Res. Soc. Symp. Proc., vol. 835, 6 pages (2005). |
Fallica et al., "Dynamic Absorption Coefficients Of Chemically Amplified Resists And Nonchemically Amplified Resists At Extreme Ultraviolet", J. Micro/Nanolith. Mems Moems 15(3), p. 033506-1-033506-7 (2016). |
Firestop Support Plate, Type B, 6 In Apr. 4, 2012, Amazon. Com, May 10, 2021, https://www.amazon.com/AmeriVent-Firestop-Support-Plate-Type/dp/B007R7W951/ (2012). |
Fray et al. "Aspects of the Application of Electrochemistry to the Extraction of Titanium and Its Applications" Materials Transactions, vol. 58, No. 3, pp. 306-312 (2017). |
Frequestly Asked Question, "What is a load lock chamber?", Kurt J. Lesker Company, www.lesker.com, p. 1 (2020). |
Freund et al. "Single crystal growth from separated educts and its application to lithum transition-metal oxides" Sci. Rep. 6, 35362, pp. 1-5 (2016). |
Fu et al., "Controlled Synthesis of Atomically Thin 1T-TaS2 for Tunable Charge Density Wave Phase Transitions" Chem. Mater. 28, pp. 7613-7618 (2016). |
G02-1152 "Atomic Layer Deposition of Al2O3 with Alcohol Oxidants for Impeding Substrate Oxidation" Abstract. Oct. 16, 2019 (2019). |
Galesic et al. "Formation of vanadium nitride by rapid thermal processing" Thin Solid Films 349(1), 7 pages (1999). |
Ge et al. "Large-scale synthesis of NbS2 nanosheets with controlled orientation on graphene by ambient pressure CVD," Nanoscale, vol. 5, 5773-5778 (2013). |
Ge et al., "Carbon Nanotube-Based Synthetic Gecko Tapes," Department of Polymer Science, PNAS, 10792-10795 (2007). |
George et al., "Atomic Layer Deposition: An Overview," Chem. Rev. 110, 111-131 (2010). |
Gertsch et al. "SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching" Chem. Mater., 31, pp. 3624-3635 (2019). |
Gesheva et al. "Composition and Micro structure of Black Molybdenum Photothermal Converter Layers Deposited by the Pyrolytic Hydrogen Reduction of MoO2Cl2" Thin Solid Films, 79, pp. 39-49 (1981). |
Glass et al. "The Chemical Vapor Deposition of Metal Boride Thin Films from Polyhedral Cluster Species", Winter and Hoffman, Inorganic Materials Synthesis. ACS Symposium Series; American Cemical Society: Washington DC, Chapter 10, pp. 130-143 (1999). |
Gole et al. "Preparation of Nickel Sulfide Thin Films and Nanocrystallites Using Nickel Furfuraldehyde Thiosemicarbazone as Single-source Precursor," Advanced Materials Research, vols. 383-390, pp. 3828-3834 (2012). |
Gordon et al. "A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches." Chemical Vapor Deposition. 9 [2]. pp. 73-78 (2003). |
Grill et al., "The Effect of Plasma Chemistry on the Damage Induced Porous SiCOH Dielectrics," IBM Research Division, RC23683 (W0508-008), Materials Science, 1-19 (2005). |
Guan et al., "Voltage gated ion and molecule transport in engineered nanochannels: theory, fabrication and applications," Nanotechnology 25 (2014) 122001. |
Gupta et al., "Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes," Journal of Applied Physics, 124, 084503 (2018). |
Gupta et al., "Conversion of Metal Carbides to Carbide Derived Carbon by Reactive Ion Etching in Halogen Gas," Proceedings of SPIE—The International Society for Optical Engineering and Nanotechnologies for Space Applications, ISSN: 0277-786X (2006). |
Habib et al. "Atmospheric oxygen plasma activation of silicon (100) surfaces," American Vacuum Society, 28(3), pp. 476-485 (2010). |
Hamalainen et al., "Atomic Layer Deposition of Rhenium Disulfide," Adv. Mater. 30.24, 6 pages (2018). |
Han et al. "Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition" Dalton Transactions 49.14 (2020): 4306-4314. |
Han et al., "van der Waals Metallic Transition Metal Dichalcogenides" Chem. Rev. 118, pp. 6297-6336 (2018). |
Hansen. "A Primer on Vacuum Pressure Measurement." Vacuum Technology & Coating. Jun. 2009. pp. 36-42 (2009). |
Hansen. "Speed, Pressure and Throughput: Part 1 System Diagnostics." Vacuum Technology & Coating. Sep. 2011. pp. 14-17 (2011). |
Hansen. "Speed, Pressure and Throughput: Part 2 Managing Gas Flow in High Vacuum Systems." Vacuum Technology & Coating. Oct. 2011. pp. 19-22 (2011). |
Hansen. "Speed, Pressure and Throughput: Part 3 Automating the Pressure Control Process." Vacuum Technology & Coating. Nov. 2011. pp. 22-25 (2011). |
Hansen. "Speed, Pressure and Throughput: Part 4 Outgassing and Base Pressure." Vacuum Technology & Coating. Dec. 2011. pp. 22-25 (2011). |
Hansen. "Speed, Pressure and Throughput: Part 5 Leaks and Gas Flow in Leak Detection." Vacuum Technology & Coating. Jan. 2012. pp. 18-21 (2011). |
Hargreaves et al., "New Fluorides and Oxyfluorides of Rhenium," J. Chem. Soc., pp. 1099-1103 (1960). |
Harrison et al., "Poly-gate Replacement Through Contact Hole (Pretch): A New Method for High-K/ Metal Gate and Multi-Oxide Implementation on Chip," IEEE (2004). |
Hayashi et al. "2,2-Difluoro-1,3-dimethylimidazolidine (DFI). A new fluorinating agent" Chem. Commun. pp. 1618-1619 (2002). |
Hayashi et al. "Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition," Journal of Applied Physics, vol. 89, No. 12, pp. 7924-7931 (2001). |
Henke et al.., "X-Ray Interactions: Photo absorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92," Atomic Data and Nuclear Data Tables, 54, 181-342 (1993). |
Heo et al., "Structural Characterization of Nanoporous Low-Dielectric Constant SiCOH Films Using Organosilane Precursors," NSTI-Nanotech, vol. 4, 122-123 (2007). |
Heyne et al., "The conversion mechanism of amorphous silicon to stoichiometric WS2" J. Materials Chemistry C, 6, pp. 4122-4130 (2018). |
Hong et al. "Ultralow-dielectric-constant amoprhous boron nitride" Nature, vol. 582, 16 pages (2020). |
Hossain et al., "Recent Advances in Two-Dimensional Materials with Charge Density Waves: Synthesis, Characterization and Applications" Crystals 7, 298, 19 pages (2017). |
Hubert et al., "A Stacked SONOS Technology, up to 4 Levels and 6nm Crystalline Nanowires, With Gate-All-Around or Independent Gates (−Flash), Suitable for Full 3D Integration," Minatec, IEDM09-637. |
Hubert et al., "A Stacked SONOS Technology, up to 4 Levels and 6nm Crystalline Nanowires, With Gate-All-Around or Independent Gates (-Flash), Suitable for Full 3D Integration," Minatec, IEDM09-637-640 (2009). |
Hudis, "Surface Crosslinking of Polyethylene Using a Hydrogen Glow Discharge," J. Appl. Polym. Sci., 16 (1972) 2397. |
Imai et al. "Energetic stability and magnetic moment of tri-, tetra-, and octa- ferromagnetic element nitrides predicted by first-principle calculations" J of Alloys and Compounds, vol. 611,19 pages (2019). |
Imamura et al. "Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices" Template for JJAP Regular Papers, Jan. 2014, pp. 29 (2014). |
IPOS; Notice of Allowance dated Aug. 14, 2017 in Application No. 10201401237. |
IPS Water Heater Pan Adapter Kit, Nov. 1, 2015, [online], [site visited Dec. 4, 2019]; URL: http://es.ipscorp.com/watertite/protectivesystem/whpanadapter (2015). |
Irumbore et al. "Solid solubilities of aluminum and gallium in germanium," J. of Physics and Chemistry of Solids, vol. 11, Issues 3-4, 239-240 (1959). |
Ivanova et al. "ALD of Sc2O3 using Sc(Cp)3 and a Novel Heteroleptic Precursors" Presented on the AVS 19th International Conference on Atomic Layer Deposition, Jul. 23, 2019, Abstract, 1 page (2019). |
Jacoby "Chemical deposition methods to the rescue" Cen. Acs. Org., pp. 29-32 (2018). |
Jensen et al. "Titanium, Zirconium, and Hafnium Tetrahydroborates as "Tailored" CVD Precursors for Metal Diboride Thin Films", J. Am. Chem. Soc. 110, pp. 1643-1644 (1988). |
Jiang et al. "Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen" J of Photopolymer Science and Technology, vol. 32, No. 1, pp. 21-25 (2019). |
Johansson et al. "Towards absolute asymmetric synthesis. Synthesis and crystal structure of stereochemically labile MCl2 (M=CO, Ni, Cu, Zn) complexes with diamine ligands," Inorganica Chimica Acta 358, pp. 3293-3302 (2005). |
Johnson et al. "A brief review of atomic layer deposition: from fundamentals to applications" Materials Today, vol. 17, Issue 5, pp. 236-246 (2014). |
Jones et al., "Growth of Aluminum Films by Low Pressure Chemical Vapour Deposition Using Tritertiarybutylaluminium," Journal of Crystal Growth 135, pp. 285-289, Elsevier Science B.V. (1994). |
Jones et al., "Recent Developments in Metalorganic Precursors for Metalorganic Chemical Vapour Deposition," Journal of Crystal Growth 146, pp. 503-510, Elsevier Science B.V. (1995). |
JPO; Notice of Allowance dated Apr. 28, 2015 in Application No. 2011090067. |
JPO; Notice of Allowance dated Apr. 5, 19 in Application No. 2015052198. |
JPO; Notice of Allowance dated Apr. 6, 2021 in Application No. 2017-139817. |
JPO; Notice of Allowance dated Aug. 11, 2021 in Application No. 2018-024655. |
JPO; Notice of Allowance dated Aug. 23, 2017 in Application No. 2013-160173. |
JPO; Notice of Allowance dated Dec. 10, 2012 in Application No. 2011-514650. |
JPO; Notice of Allowance dated Dec. 17, 2019 in Application No. 2016001928. |
JPO; Notice of Allowance dated Dec. 18, 2014 in Application No. 2010058415. |
JPO; Notice of Allowance dated Dec. 19, 2019 in Application No. 2014205548. |
JPO; Notice of Allowance dated Jul. 1, 2020 in Application No. 2019-025168. |
JPO; Notice of Allowance dated Jul. 23, 2012 in Application No. 2009-532567. |
JPO; Notice of Allowance dated Jul. 24, 2018 in Application No. 2013-178344. |
JPO; Notice of Allowance dated Jun. 12, 2015 in Application No. 2012504786. |
JPO; Notice of Allowance dated Jun. 24, 2010 in Application No. 2003029767. |
JPO; Notice of Allowance dated Jun. 29, 2013 in Application No. 2012-509857. |
JPO; Notice of Allowance dated Jun. 30, 2009 in Application No. 2004558313. |
JPO; Notice of Allowance dated Jun. 30, 2021 in Application No. 2021-004208. |
JPO; Notice of Allowance dated Jun. 6, 2018 in Application No. 2014-120675. |
JPO; Notice of Allowance dated Jun. 6, 2018 in Application No. 2014-188835. |
JPO; Notice of Allowance dated Mar. 17, 2021 in Application No. 2020-010953. |
JPO; Notice of Allowance dated Mar. 29, 2013 in Application No. 2010-509478. |
JPO; Notice of Allowance dated Mar. 3, 2016 in Application No. 2011-284831. |
JPO; Notice of Allowance dated May 14, 2018 in Application No. 2014-216540. |
JPO; Notice of Allowance dated Nov. 20, 2019 in Application No. 2015034774. |
JPO; Notice of Allowance dated Nov. 26, 2020 in Application No. 2020-502653. |
JPO; Notice of Allowance dated Nov. 27, 2020 in Application No. 2016-206625. |
JPO; Notice of Allowance dated Oct. 21, 2016 in Application No. 2012-153698. |
JPO; Office Action dated Apr. 11, 2012 in Application No. 2010-522075. |
JPO; Office Action dated Apr. 12, 2018 in Application No. 2014-205548. |
JPO; Office Action dated Apr. 13, 2010 in Application No. 2003029767. |
JPO; Office Action dated Apr. 3, 2018 in Application No. 2014-120675. |
JPO; Office Action dated Aug. 10, 2009 in Application No. 2003029767. |
JPO; Office Action dated Aug. 14, 2017 in Application No. 2013-178344. |
JPO; Office Action dated Aug. 2, 2021 in Application No. 2019-504674. |
JPO; Office Action dated Aug. 22, 2013 in Application No. 2010-153754. |
JPO; Office Action dated Aug. 24, 2020 in Application No. 2019-119908. |
JPO; Office Action dated Aug. 26, 2015 in Application No. 2011-284831. |
JPO; Office Action dated Aug. 28, 2020 in Application No. 2017-139817. |
JPO; Office Action dated Aug. 29, 2019 in Application No. 2016001928. |
JPO; Office Action dated Aug. 7, 2014 in Application No. 2010058415. |
JPO; Office Action dated Dec. 1, 2014 in Application No. 2012-504786. |
JPO; Office Action dated Dec. 10, 2014 in Application No. 2011090067. |
JPO; Office Action dated Dec. 20, 2011 in Application No. 2010-522075. |
JPO; Office Action dated Dec. 20, 2013 in Application No. 2012-504786. |
JPO; Office Action dated Feb. 19, 2009 in Application No. 2004558313. |
JPO; Office Action dated Jan. 23, 2018 in Application No. 2013-178344. |
JPO; Office Action dated Jan. 25, 2014 in Application No. 2012-504786. |
JPO; Office Action dated Jan. 26, 2021 in Application No. 2017-139817. |
JPO; Office Action dated Jan. 30, 19 in Application No. 2015052198. |
JPO; Office Action dated Jul. 14, 2016 in Application No. 2012-153698. |
JPO; Office Action dated Jul. 20, 2018 in Application No. 2015-034774. |
JPO; Office Action dated Jun. 1, 2020 in Application No. 2016-206625. |
JPO; Office Action dated Jun. 27, 2019 in Application No. 2015034774. |
JPO; Office Action dated Jun. 29, 2020 in Application No. 2020-502653. |
JPO; Office Action dated Mar. 11, 2013 in Application No. 2012-509857. |
JPO; Office Action dated Mar. 16, 2012 in Application No. 2009-532567. |
JPO; Office Action dated Mar. 28, 2018 in Application No. 2014-188835. |
JPO; Office Action dated Mar. 31, 2021 in Application No. 2018-024655. |
JPO; Office Action dated May 15, 2013 in Application No. 2010058415. |
JPO; Office Action dated May 19, 2017 in Application No. 2013-160173. |
JPO; Office Action dated May 31, 2012 in Application No. 2011-514650. |
JPO; Office Action dated Oct. 30, 2008 in Application No. 2004558313. |
JPO; Office Action dated Oct. 30, 2013 in Application No. 2010058415. |
JPO; Office Action dated Oct. 30, 2013 in Application No. 2010-193285. |
JPO; Office Action dated Sep. 10, 2021 in Application No. 2019-531445. |
JPO; Office Action dated Sep. 11, 2012 in Application No. 2011-514650. |
Jung et al. "New Mechanisms for Ozone-Based ALO Growth of High-k Dielectrics via Nitrogen-Oxygen Species" ECS Transactions, 33(2), pp. 91-99 (2010). |
Jung et al., "Double Patterning of Contact Array with Carbon Polymer," Proc. Of SPIE, 6924, 69240C, 1-10 (2008). |
Juppo et al. "Deposition of molybdenum thin films by an alternate supply of MoCl 5 and Zn" J of Vacuumn Science & Technology A, 16, pp. 2845-2850 (1998). |
Kang et al. "Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber" J of Nanoscience and Nanotechnology, vol. 12, pp. 3330-3333 (2012). |
Katamreddy et al., "ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor," Journal of The Electrochemical Society, 153 (10) C701-C706 (2006). |
Katamreddy et al., "ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor," Journal of The Electrochemical Society, 153 (10). |
Kern et al., "Chemically Vapor-Deposited Borophosphosilicate Glasses for Silicon Device Applications" RCE Review, 43, 3, pp. 423-457 (1982). |
Kerrigan et al. "Low Temperature, Selective Atomic Layer Deposition of Cobalt Metal Films Using Bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and Alkylamine Precursors," Chem. Materials, 29, pp. 7458-7466 (2017). |
Khandelwal et al. "Low-temperature Ar/N2 remote plasma nitridation of SiO2 thin films," J. Vacuum Science & Technology A, 20(6), pp. 1989-1996 (2002). |
Kim et al. "A process for topographically selective deposition on 3D nanostructures by ion implantation" ACS Nano, 10, 4, 4451-4458 (2016). |
Kim et al. "Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidation" Microelectronic Engineering, 106, pp. 69-75 (2013). |
Kim et al. "High Growth Rate in Atomic Layer Deposition of TiO2 Thin Films by UV Irradiation" Electrochemical and Solid-State Letters, 14(4), pp. H146-H148 (2011). |
Kim et al. "Thermal Decomposition of Tetrakis(ethylmethylamido) Titanium for Chemical Vapor Deposition of Titanium Nitride" Bull. Korean Chem. Soc., vol. 27, No. 2, 5 pages (2006). |
Kim et al., "Characteristics of Low Temperature High Quality Silicon Oxide by Plasma Enhanced Atomic Layer Deposition with In-Situ Plasma Densification Process," The Electrochemical Society, ECS Transactions, College of Information and Communication Engineering, Sungkyunkwan University, 53(1), 321-329 (2013). |
Kim et al., "Novel Flowable CVD Process Technology for sub-20nm Interlayer Dielectrics," IEEE International Interconnect Technology Conference (IITC 2012), San Jose, California, USA, Jun. 4-6, 2012, pp. 1-3 (2012). |
Kim et al., "Passivation Effect on Low-k S/OC Dielectrics by H2 Plasma Treatment," Journal of the Korean Physical Society, ″40, 1, 94-98 (2002). |
King, Plasma Enhanced Atomic Layer Deposition of SiNx: H and SiO2, J. Vac. Sci. Technol., A29(4) (2011). |
KIPO; Decision of Intellectual Property Trial and Appeal Board dated Jun. 23, 2020 in Application No. 10-2012-0076564. |
KIPO; Decision of Intellectual Property Trial and Appeal Board dated May 13, 2019 in Application No. 10-2012-7004062. |
KIPO; Final Office Action dated Jun. 17, 2019 in Application No. 10-2017-7023740. |
KIPO; Notice of Allowance dated 6/2/0216 in Application No. 10-2011-7023416. |
KIPO; Notice of Allowance dated Apr. 1, 2019 in Application No. 30-2018-0033442. |
KIPO; Notice of Allowance dated Apr. 1, 2021 in Application No. 30-2020-0030139 (M001). |
KIPO; Notice of Allowance dated Apr. 1, 2021 in Application No. 30-2020-0030139 (M002). |
KIPO; Notice of Allowance dated Apr. 15, 2021 in Application No. 10-2014-0103853. |
KIPO; Notice of Allowance dated Apr. 23, 2020 in Application No. 10-2013-0050740. |
KIPO; Notice of Allowance dated Aug. 13, 2020 in Application No. 10-2013-0098575. |
KIPO; Notice of Allowance dated Aug. 17, 2021 in Application No. 10-2014-0122903. |
KIPO; Notice of Allowance dated Aug. 26, 2019 in Application No. 10-2014-7017110. |
KIPO; Notice of Allowance dated Aug. 29, 2019 in Application No. 10-2013-0036823. |
KIPO; Notice of Allowance dated Dec. 1, 2016 in Application No. 10-2010-0067768. |
KIPO; Notice of Allowance dated Dec. 1, 2020 in Application No. 30-2019-0061607. |
KIPO; Notice of Allowance dated Dec. 23, 2020 in Application No. 30-2020-0006059. |
KIPO; Notice of Allowance dated Feb. 1, 2021 in Application No. 30-2020-0006385. |
KIPO; Notice of Allowance dated Feb. 1, 2021 in Application No. 30-2020-0006391. |
KIPO; Notice of Allowance dated Feb. 23, 2018 in Application No. 10-2014-7017112. |
KIPO; Notice of Allowance dated Feb. 27, 2018 in Application No. 10-2017-0175442. |
KIPO; Notice of Allowance dated Feb. 27, 2020 in Application No. 10-2013-0089998. |
KIPO; Notice of Allowance dated Feb. 28, 2018 in Application No. 10-2012-0041878. |
KIPO; Notice of Allowance dated Jan. 11, 2018 in Application No. 10-2011-0087600. |
KIPO; Notice of Allowance dated Jan. 13, 2020 in Application No. 10-2013-0088450. |
KIPO; Notice of Allowance dated Jan. 19, 2018 in Application No. 30-2017-0001320. |
KIPO; Notice of Allowance dated Jan. 4, 2021 in Application No. 10-2014-0060120. |
KIPO; Notice of Allowance dated Jan. 4, 2021 in Application No. 10-2014-0071653. |
KIPO; Notice of Allowance dated Jul. 10, 2018 in Application No. 30-2017-0052872. |
KIPO; Notice of Allowance dated Jul. 19, 2018 in Application No. 20187013945. |
KIPO; Notice of Allowance dated Jul. 20, 2020 in Application No. 10-2020-7000992. |
KIPO; Notice of Allowance dated Jul. 21, 2021 in Application No. 10-2015-0025314. |
KIPO; Notice of Allowance dated Jul. 5, 2019 in Application No. 10-2012-0064526. |
KIPO; Notice of Allowance dated Jul. 6, 2021 in Application No. 10-2014-0145220. |
KIPO; Notice of Allowance dated Jun. 24, 2021 in Application No. 10-2019-0044213. |
KIPO; Notice of Allowance dated Mar. 14, 2018 in Application No. 10-2011-0142924. |
KIPO; Notice of Allowance dated Mar. 25, 2021 in Application No. 10-2014-0128626. |
KIPO; Notice of Allowance dated Mar. 4, 2020 in Application No. 10-2013-0114079. |
KIPO; Notice of Allowance dated Mar. 7, 2017 in Application No. 10-2010-0082446. |
KIPO; Notice of Allowance dated May 14, 2020 in Application No. 10-2013-0102026. |
KIPO; Notice of Allowance dated May 24, 2021 in Application No. 10-2020-0101096. |
KIPO; Notice of Allowance dated May 27, 2021 in Application No. 10-2014-0105478. |
KIPO; Notice of Allowance dated May 30, 2017 in Application No. 10-2016-7023913. |
KIPO; Notice of Allowance dated May 30, 2018 in Application No. 10-2012-0042518. |
KIPO; Notice of Allowance dated Nov. 22, 2018 in Application No. 10-2012-0103114. |
KIPO; Notice of Allowance dated Nov. 29, 2019 in Application No. 10-2019-0127773. |
KIPO; Notice of Allowance dated Oct. 12, 2020 in Application No. 10-2014-0027305. |
KIPO; Notice of Allowance dated Oct. 16, 2018 in Application No. 30-2018-0006016. |
KIPO; Notice of Allowance dated Oct. 19, 2020 in Application No. 10-2014-0086902. |
KIPO; Notice of Allowance dated Oct. 20, 2020 in Application No. 30-2019-0054013 M001. |
KIPO; Notice of Allowance dated Oct. 20, 2020 in Application No. 30-2019-0054013 M002. |
KIPO; Notice of Allowance dated Oct. 20, 2020 in Application No. 30-2019-0054642. |
KIPO; Notice of Allowance dated Oct. 21, 2019 in Application No. 10-2013-0109390. |
KIPO; Notice of Allowance dated Oct. 22, 2020 in Application No. 30-2019-0058076. |
KIPO; Notice of Allowance dated Oct. 22, 2020 in Application No. 30-2019-0058566 (M001). |
KIPO; Notice of Allowance dated Oct. 22, 2020 in Application No. 30-2019-0058566 (M002). |
KIPO; Notice of Allowance dated Oct. 24, 2018 in Application No. 10-2011-0036449. |
KIPO; Notice of Allowance dated Oct. 26, 2020 in Application No. 10-2017-0087308. |
KIPO; Notice of Allowance dated Oct. 27, 2020 in Application No. 10-2014-0011764. |
KIPO; Notice of Allowance dated Oct. 28, 2019 in Application No. 10-2013-0121554. |
KIPO; Notice of Allowance dated Oct. 28, 2020 in Application No. 10-2020-0009462. |
KIPO; Notice of Allowance dated Oct. 30, 2019 in Application No. 10-2013-0084459. |
KIPO; Notice of Allowance dated Oct. 8, 2019 in Application No. 10-2013-0101944. |
KIPO; Notice of Allowance dated Sep. 1, 2017 in Application No. 20110034612. |
KIPO; Notice of Allowance dated Sep. 2, 2021 in Application No. 30-2020-0047043. |
KIPO; Notice of Allowance dated Sep. 23, 2021 in Application No. 2014-0156196. |
KIPO; Notice of Allowance dated Sep. 25, 2020 in Application No. 10-2013-0049598. |
KIPO; Notice of Allowance dated Sep. 27, 2019 in Application No. 10-2012-7004062. |
KIPO; Notice of Allowance dated Sep. 27, 2020 in Application No. 10-2014-0091092. |
KIPO; Notice of Allowance dated Sep. 28, 2021 in Application No. 2017-54647. |
KIPO; Notice of Allowance dated Sep. 29, 2016 in Application No. 10-2010-0028336. |
KIPO; Notice of Allowance dated Sep. 8, 2020 in Application No. 10-2014-0021615. |
KIPO; Notice of Allowance dated Sep. 8, 2021 in Application No. 10-2014-0136089. |
KIPO; Notice of Allownace dated Dec. 25, 2020 in Application No. 30-2020-0006223. |
KIPO; Office Action dated Apr. 19, 2019 in Application No. 10-2013-0101944. |
KIPO; Office Action dated Apr. 19, 2021 in Application No. 10-2015-0035094. |
KIPO; Office Action dated Apr. 2, 2018 in Application No. 10-2011-0036449. |
KIPO; Office Action dated Apr. 20, 2021 in Application No. 10-2014-0136089. |
KIPO; Office Action dated Apr. 24, 2019 in Application No. 10-2013-0036823. |
KIPO; Office Action dated Apr. 27, 2021 in Application No. 10-2014-0027217. |
KIPO; Office Action dated Apr. 30, 2018 in Application No. 10-2012-0103114. |
KIPO; Office Action dated Apr. 30, 2019 in Application No. 10-2013-0088450. |
KIPO; Office Action dated Apr. 5, 2021 in Application No. 10-2015-0031720. |
KIPO; Office Action dated Aug. 1, 2016 in Application No. 10-2010-0067768. |
KIPO; Office Action dated Aug. 15, 2019 in Application No. 10-2013-0109390. |
KIPO; Office Action dated Aug. 18, 2020 in Application No. 10-2014-0071653. |
KIPO; Office Action dated Aug. 18, 2021 in Application No. 10-2021-0090283. |
KIPO; Office Action dated Aug. 2, 2021 in Application No. 2017-43865. |
KIPO; Office Action dated Aug. 27, 2019 in Application No. 10-2013-0049598. |
KIPO; Office Action dated Aug. 27, 2019 in Application No. 10-2013-0089998. |
KIPO; Office Action dated Dec. 10, 2015 in Application No. 10-2010-0028336. |
KIPO; Office Action dated Dec. 11, 2015 in Application No. 10-2011-7023416. |
KIPO; Office Action dated Dec. 13, 2018 in Application No. 10-2012-0064526. |
KIPO; Office Action dated Dec. 23, 2020 in Application No. 10-2019-0044213. |
KIPO; Office Action dated Dec. 4, 2019 in Application No. 10-2013-0098575. |
KIPO; Office Action dated Feb. 12, 2020 in Application No. 10-2020-7000992. |
KIPO; Office Action dated Feb. 15, 2020 in Application No. 10-2014-0027305. |
KIPO; Office Action dated Feb. 17, 2021 in Application No. 10-2014-0122903. |
KIPO; Office Action dated Feb. 28, 2020 in Application No. 10-2013-0049598. |
KIPO; Office Action dated Feb. 3, 2020 in Application No. 10-2014-0021615. |
KIPO; Office Action dated in Aug. 30, 2021 in Application No. 2017-81515. |
KIPO; Office Action dated Jan. 12, 2019 in Application No. 10-2012-0064526. |
KIPO; Office Action dated Jan. 22, 2019 in Application No. 10-2014-7017110. |
KIPO; Office Action dated Jan. 25, 2021 in Application No. 10-2014-0011765. |
KIPO; Office Action dated Jan. 25, 2021 in Application No. 10-2014-0145220. |
KIPO; Office Action dated Jan. 26, 2021 in Application No. 30-2020-0005953 (M001). |
KIPO; Office Action dated Jan. 26, 2021 in Application No. 30-2020-0005953 (M002). |
KIPO; Office Action dated Jan. 30, 2019 in Application No. 30-2018-0033442. |
KIPO; Office Action dated Jan. 6, 2021 in Application No. 10-2015-0025314. |
KIPO; Office Action dated Jul. 11, 2018 in Application No. 30-2018-0006016. |
KIPO; Office Action dated Jul. 20, 2017 in Application No. 20110034612. |
KIPO; Office Action dated Jul. 21, 2020 in Application No. 10-2014-0011765. |
KIPO; Office Action dated Jul. 21, 2020 in Application No. 10-2017-0087308. |
KIPO; Office Action dated Jul. 24, 2017 in Application No. 10-2012-7004062. |
KIPO; Office Action dated Jul. 9, 2020 in Application No. 10-2014-0060120. |
KIPO; Office Action dated Jun. 10, 2021 in Application No. 2015-61391. |
KIPO; Office Action dated Jun. 17, 2021 in Application No. 10-2021-0051860. |
KIPO; Office Action dated Jun. 19, 2020 in Application No. 10-2013-0098575. |
KIPO; Office Action dated Jun. 23, 2021 in Application No. 10-2015-0037658. |
KIPO; Office Action dated Jun. 28, 2021 in Application No. 10-2014-0027217. |
KIPO; Office Action dated Jun. 29, 2016 in Application No. 10-2010-0028336. |
KIPO; Office Action dated Jun. 29, 2021 in Application No. 10-2017-0066979. |
KIPO; Office Action dated Jun. 30, 2020 in Application No. 10-2019-0044213. |
KIPO; Office Action dated Mar. 10, 2021 in Application No. 10-2017-0055703. |
KIPO; Office Action dated Mar. 11, 2020 in Application No. 10-2014-0103853. |
KIPO; Office Action dated Mar. 13, 2016 in Application No. 10-2011-7023416. |
KIPO; Office Action dated Mar. 13, 2017 in Application No. 20110034612. |
KIPO; Office Action dated Mar. 19, 2021 in Application No. 10-2014-0156196. |
KIPO; Office Action dated Mar. 21, 2018 in Application No. 10-2012-0042518. |
KIPO; Office Action dated Mar. 21, 2018 in Application No. 10-2012-0064526. |
KIPO; Office Action dated Mar. 23, 2021 in Application No. 10-2014-0011765. |
KIPO; Office Action dated Mar. 27, 2019 in Application No. 10-2012-0076564. |
KIPO; Office Action dated Mar. 27, 2019 in Application No. 10-2013-0084459. |
KIPO; Office Action dated Mar. 29, 2021 in Application No. 10-2014-0165685. |
KIPO; Office Action dated Mar. 3, 2016 in Application No. 10-2010-0067768. |
KIPO; Office Action dated Mar. 30, 2018 in Application No. 10-2012-0076564. |
KIPO; Office Action dated Mar. 30, 2020 in Application No. 10-2014-0011764. |
KIPO; Office Action dated Mar. 8, 2021 in Application No. 10-2017-0054647. |
KIPO; Office Action dated May 19, 2021 in Application No. 10-2015-0036819. |
KIPO; Office Action dated May 2, 2016 in Application No. 10-2010-0082446. |
KIPO; Office Action dated May 21, 2019 in Application No. 10-2013-0121554. |
KIPO; Office Action dated May 21, 2020 in Application No. 10-2014-0086902. |
KIPO; Office Action dated May 21, 2020 in Application No. 10-2014-0091092. |
KIPO; Office Action dated May 23, 2017 in Application No. 10-2011-0036449. |
KIPO; Office Action dated May 30, 2019 in Application No. 10-2012-7004062. |
KIPO; Office Action dated May 31, 2019 in Application No. 10-2013-0050740. |
KIPO; Office Action dated Nov. 12, 2019 in Application No. 10-2013-0102026. |
KIPO; Office Action dated Nov. 14, 2020 in Application No. 10-2020-0101096. |
KIPO; Office Action dated Nov. 24, 2017 in Application No. 10-2011-0036449. |
KIPO; Office Action dated Nov. 27, 2019 in Application No. 10-2013-0050740. |
KIPO; Office Action dated Nov. 29, 2019 in Application No. 10-2013-0088450. |
KIPO; Office Action dated Nov. 29, 2020 in Application No. 10-2014-0105478. |
KIPO; Office Action dated Nov. 9, 2016 in Application No. 10-2016-7023 913. |
KIPO; Office Action dated Oct. 1, 2021 in Application No. 2017-43919. |
KIPO; Office Action dated Oct. 23, 2017 in Application No. 10-2011-0142924. |
KIPO; Office Action dated Oct. 24, 2016 in Application No. 10-2012-7004062. |
KIPO; Office Action dated Oct. 26, 2020 in Application No. 10-2014-0027217. |
KIPO; Office Action dated Oct. 30, 2017 in Application No. 10-2012-0041878. |
KIPO; Office Action dated Oct. 5, 2020 in Application No. 10-2014-0103853. |
KIPO; Office Action dated Oct. 7, 2019 in Application No. 10-2013-0114079. |
KIPO; Office Action dated Oct. 7, 2020 in Application No. 10-2014-0128626. |
KIPO; Office Action dated Sep. 10, 2021 in Application No. 2017-86083. |
KIPO; Office Action dated Sep. 15, 2017 in Application No. 30-2017-0001320. |
KIPO; Office Action dated Sep. 18, 2018 in Application No. 10-2012-0064526. |
KIPO; Office Action dated Sep. 19, 2016 in Application No. 10-2010-0082446. |
KIPO; Office Action dated Sep. 27, 2018 in Application No. 10-2012-0076564. |
KIPO; Office Action dated Sep. 28, 2017 in Application No. 10-2014-7017112. |
KIPO; Office Action dated Sep. 28, 2017 in Application No. 10-2017-7023740. |
KIPO; Office Action dated Sep. 28, 2021 in Application No. 2017-49172. |
KIPO; Office Action dated Sep. 3, 2021 in Application No. 2017-37847. |
KIPO; Office Action dated Sep. 4, 2017 in Application No. 10-2011-0087600. |
KIPO; Office Action dated Sep. 6, 2021 in Application No. 10-2015-0046393. |
KIPO; Offie Action dated Apr. 22, 2020 in Application No. 10-2020-0009462. |
Kirsch et al. "Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning" Applied Physics Letters 92, 092901, 3 pages (2008). |
KJESBU, ABB Corporate Research, Internet, pp. 1-37 (2002). |
Kliem et al. "Silyl Group Migrations Between Oxygen and Nitrogen in Aminosiloxanes"; Organosilicon Chemistry VI: from Molecules to Materials; pp. 216-221 (2005). |
Klug et al., "Atomic Layer Deposition of Amorphous Niobium Carbide-Based Thin Film Superconductors," The Journal of Physical Chemistry C, vol. 115, p. 25063-25071, (2011). |
Knoops et al., "Atomic Layer Deposition of Silicon Nitride from Bis(tert-butyloamino) silane and N2 Plasma," Applied Materials & Interfaces, American Chemical Society, A-E (2015). |
Kobayshi, et al., "Temperature Dependence of SiO2 Film Growth with Plasma-Enhanced Atomic Layer Deposition," regarding Thin Solid Films, published by Elsevier in the International Journal on the Science and Technology of Condensed Matter, in vol. 520, No. 11, 3994-3998 (2012). |
Kofuji et al. "Line-edge roughness increase due to wiggling enhanced by initial pattern waviness" Jpn. J. Appl. Phys. 53, 03DE01, pp. 1-7 (2014). |
Kofuji et al. "Mechanism of wiggling enhancement due to HBr gas addition during amorphous carbon etching" Jpn. J. Appl. Phys. 54, 06FH04, p. 107 (2015). |
Kogelschatz et al. "Ozone Generation from Oxygen and Air: Discharge Physics And Reaction Mechanisms" Ozone Science & Engineering, 10, pp. 367-378 (1998). |
Koo et al., "Characteristics of A12O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method," Journal of Physical Society, 48, 1, 131-136 (2006). |
Koutsokeras et al. "Texture and Micro structure Evolution in Single-Phase TixTal-xN Alloys of Rocksalt Structure," Journal of Applied Physics, 110, p. 043535-1-043535-6, (2011). |
Kovalgin et al. "Hot-Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry" Adv. Mater. Interfaces 4, 1700058, 11 pages (2017). |
Krenek et al. "IR Laser CVD of Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures", NanoCon 2014, Nov. 5-7, Brno, Czech Republic, EU. |
Krumdieck "Kinetic Model of Low Pressure Film Deposition from Single Precursor Vapor in a Well-Mixed, Cold-Wall Reactor" Acta mater., 49, pp. 583-588 (2001). |
Krumdieck et al. "Experimental Characterization and Modeling of Pulsed MOCVD with Ultrasonic Atomization of Liquid Precusor" Chem. Vap. Deposition, 7 (2), pp. 85-90 (2001). |
Kucheyev et al. "Mechanisms of Atomic Layer Deposition on Substrates with Ultrahigh Aspect Ratios." Langmuir. 24 [3]. pp. 943-948 (2008). |
Kuchumov et al. "Pulsed MO CVD Processes of MgO Layer Deposition from Mg(thd)2" ECS Trans. 25, pp. 927-934 (2009). |
Kukli et al. "Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride" Chem. Mater. 12, pp. 1914-1920 (2000). |
Kukli et al. "Atomic Layer Epitaxy Growth of Tantalum Oxide Thin Films from Ta(OC2H5)5 and H20" The Electrochemical Society, vol. 142, No. 5, pp. 1670-1674 (1995). |
Kukli et al. "Properties of tantalum oxide thin films grown by atomic layer deposition" Thin Solid Films, 260, pp. 135-142 (1995). |
Kukli et al., "Influence of atomic layer deposition parameters on the phase content of Ta2O5 films" J. Crystal Growth, 212, pp. 459-468 (2000). |
Kukli et al., "Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen". Journal of Applied Physics, vol. 92, No. 10, Nov. 15, 2002, pp. 5698-5703 (2002). |
Kumar et al. "Bringing the benefits of Java to Bluetooth" http://www.allembedded.com/story/OEG20020519S001, pp. 1-3 (2002). |
Kurosawa et al., "Synthesis and Characterization of Plasma-Polymerized Hexamethyldisiloxane Films," Thin Solid Films, 506-507, 176-179 (2006). |
Kwon et al., "Substrate Selectivity of (tBu-Allyl)Co(CO)3 during Thermal Atomic Layer Deposition of Cobalt," Chem. Materials, 24, pp. 1025-1030 (2012). |
Lanford et al., "The Hydrogen Content of Plasmadeposited Silicon Nitride," J. Appl. Phys., 49, 2473 (1978). |
Lee et al. "Enahancement of Iodine Adsorption on Ruthenium Glue Layer for Seedless CECVD of Cu" Electrochemical and Solid-State Letters, 8(2) C39-C42 (2005). |
Lee et al. "Growth without Postannealing of Monoclinic VO2 Thin Film by Atomic Layer Deposition Using VC14 as Precursor" Coatings, 8, 431, pp. 1-11 (2018). |
Lee et al. "Photo-Induced Atomic Layer Deposition of Tantalum Oxide Thin Films from Ta(OC2H5)5 and O2" J of the Electrochemical Society. 151(1) pgs. C52-C55 (2004). |
Lee et al. "Ultraviolet light enhancement of Ta2O5 dry etch rates" J. of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 18, pp. 293-295 (2000). |
Lee et al., "Characteristics Of Low- K Sioc Films Deposited Via Atomic Layer Deposition," Thin Solid Films 645, pp. 334-339 (2018). |
Lee et al., Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory, IEEE Electron Device Letters, vol. 37, No. 7, 866-869 (2016). |
Levy et al., "Reflow Mechanisms of Contact Vias in VLSI Processing" J. Electrochem. Soc.: Solid-State Science and Technology, 13 3, 7, pp. 1417-1424 (1986). |
Lewis et al. "Hawley's Condensed Chemical Dictionary" 12th Edition; excerpt pp. 1027-1038 (2005). |
Li et al., "Metallic Transition-Metal Dichalcogenide Nanocatalysts for Energy Conversion" Chem. 4, pp. 1510-1537 (2018). |
Liang et al. "Conversion of Metal Carbides to Carbide Derived Carbon by Reactive Ion Etching in Halogen Gas" Micro (MEMS) and Nantoechnologies for Space Applications, Thomas George et al. vol. 6223, 2006 p. 62230J-I to 62230J-11 lines 3-14 in the "Abstract" section and lines 7-9 in the "Introduction" section of p. 1, lines 3-4 in the "Introduction" section and lines 3-4 in the "Experimental Procedure" section of p. 2 (2006). |
Lieberman, et al., "Principles of Plasma Discharges and Materials Processing," Second Edition, 368-381 (2005). |
Lim et al. "Atomic layer deposition of transition metals" Nature Materials, vol. 2 pp. 749-754 (2003). |
Lim et al. "Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transistion Metal Amidinates," Inorg. Chem., 42, pp. 7951-7958 (2003). |
Lim et al., "Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition," ETRI Journal, 27 (1), 118-121 (2005). |
Liu et al., "Research, Design, and Experiment of End Effector for Wafer Transfer Robot," Industrial Robot: An International Journal, 79-91 (2012). |
Liu et al., "Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier" Sci. Adv. 2: el600069, 7 pages (2016). |
Londergan et al. "Engineered Low Resistivity Titanium-Tantalum Nitride Films by Atomic Layer Deposition," Mat. Res. Soc. Symp. Proc., vol. 714E, pp. L5.3.1-L5.3.6 (2001). |
Longrie et al., "Plasma-Enhanced ALD of Platinum with O2, N2 and NH3 Plasmas", ECS Journal of Solid State Science and Technology, vol. 1, pp. Q123-Q129 (2012). |
Mackenzie et al. "Stress Control of Si-Based PEVCD Dielectrics," Proc. Symp. Silicon Nitrode and Silicon Dioxide Thin Insulating Films & Other Emerging Dielectrics VIII, 148-159 (2005). |
Mackus et al., "Optical Emission Spectroscopy as a Tool for Studying Optimizing and Monitoring Plasma-Assisted Atomic Layer Deposition Processes," Journal of Vacuum Science and Technology, 77-87 (2010). |
Maeng et al. Electrical properties of atomic layer disposition Hf02 and Hf0xNy on Si substrates with various crystal orientations, Journal of the Electrochemical Society, 2008-04, page H267-H271, vol. 155, No. 4, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea (2008). |
Maeno, "Gecko Tape Using Carbon Nanotubes," Nitto Denko Gihou, 47, 48-51 (2009). |
Maina et al. "Atomic layer deposition of transition metal films and nanostructures for electronic and catalytic applications" Critical Reviews in Solid State and Materials Sciences, Abstract, 2 pages (2020). |
Makela et al. "Thermal Atomic Layer Deposition of Continuous and Highly Conducting Gold Thin Films," Chem. Materials, 29, pp. 6130-6136 (2017). |
Mameli et al. "Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle" ACS Nano 11, pp. 9303-9311 (2017). |
Mameli et al. "Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plama" ACS Appl. Mater. Interfaces 10, p. 38588-38595 (2018). |
Marsik et al., "Effect of Ultraviolet Curing Wavelength on Low-k Dielectric Material Properties and Plasma Damage Resistance," Sciencedirect.com, 519, 11, 3619-3626 (2011). |
Mason et al., "Hydrolysis of Tri-tert-butylaluminum: The First Structural Characterization of Alkylalumoxanes [(R2Al)2O]n and (RAIO)n," J. American Chemical Society, vol. 115, No. 12, pp. 4971-4984 (1993). |
Massachusetts Institute of Technology Lincoln Laboratory, "Solid State Research," Quarterly Technical Report (1995). |
Mattinen et al., "Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing" J. Vac. Sci. Tech. 37, 020921, 35 pages (2019). |
Maydannik et al., "Spatial atomic layer deposition: Performance of low temperature H2O and 03oxidant chemistry for flexible electronics encapsulation", Journal of Vacuum Science and Technology: Part A AVS/ AIP, vol. 33 (1901). |
Meng et al., "Atomic Layer of Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks," Materials, 9, 1007 (2016). |
Merdrignac-Conanec et al. "Nitridation under ammonia of high surface area vanadium aerogels" Journal of Solid State Chemistry 178(1), 8 pages (2005). |
Miikkulainen et al. "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends" Journal of Applied Physics, 112, 102 pages (2013). |
Miller et al. "Carbon nitrides: synthesis and characterization of a new class of functional materials," Phys.Chem.Chem.Phys., 19, p. 15613-15638 (2017). |
Mix et al., "Characterization of plasma-polymerized allyl alcohol polymers and copolymers with styrene," Adhes. Sci. Technol., 21 (2007), S. 487-507. |
Moeen, "Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications," KTH Royal Institute of Technology. Information and Communication Technology, Department of Integrated Devices and Circuits, Stockholm Sweden (2015). |
Morishige et al., "Thermal Desorption and Infrared Studies of Ammonia Amines and Pyridines Chemisorbed on Chromic Oxide," J. Chem. Soc., Faraday Trans. 1, 78, 2947-2957 (1982). |
Mosleh et al., "Enhancement of Material Quality of (Si)GeSnFilms Grown by SnC14 Precursor," ECS Transactions, 69 (5), 279-285 (2015). |
Mukai et al., "A Study of CD Budget in Spacer Patterning Technology," Proc. Of SPIE, 6924, 1-8 (2008). |
Musschoot et al. "Atomic layer deposition of titanium nitride from TDMAT precursor" Microelectronic Engineering, 86, pp. 72-77 (2009). |
Naito et al. "Electrical Transport Properties in2H-NbS2, -NbSe2, -TaS2 and -TaSe2," J. of Physical Society of Japan, vol. 51, No. 1, 219-227 (1982). |
Nakano et al., "Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy" Nano. Lett. 17, pp. 5595-5599 (2017). |
Naslain et al. "Synthesis of highly tailored ceramic matrix composites by pressure-pulsed CVI" Solid State Ionics, 141-142, pp. 541-548 (2001). |
Ngo et al. "Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation," J. Applied Physics, 114, 9 pages (2013). |
Niinisto et al. "Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials" Pus. Stat. Sol. (a) 201, No. 7, pp. 1443-1452 (2004). |
Nikolic et al. "The dependence of the work function of rare earth metals on their electron structure" Microelectronics Journal 27, 93-96 (1996). |
Niskanen et al. "Radical-enhanced atomic layer deposition of metallic copper thin films" Journal of the Electrochemical Society 152(1) pages, G25-G28 (2004). |
Nogueira et al., "Production of Highly Hydrophobic Films Using Low Frequency and High Density Plasma," Revista Brasileira de Aplicacoes de Vacuo, 25(1), 45-53 (2006). |
Noircler et al. "Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films" CrystEngComm, 22(33), pp. 5464-5472 (2020). |
Novaro et al. Theoretical Study on a Reaction Pathway of Ziegler-Natta-Type Catalysis, J. Chem. Phys. 68(5), Mar. 1, 1978 p. 2337-2351. |
O'hanlon "A User's Guide to Vacuum Technology" Third Edition, Chapter 19, pp. 359-378 (2003). |
Ohchi et al. "Reducing damage to Si substrates during gate etching processes." Japanese Journal of Applied Physics 47.7R 5324 (2008). |
Ohtsu et al. "Influences of Gap Distance on Plasma Characteristics in Narrow Gap Capacitatively Coupled Radio-Frequency Discharge," vol. 43, No. 2, pp. 795-799 (2004). |
Ohzawa et al. "Preparation of fibrous SiC shape using pressure-pulsed chemical vapour infiltration and its properties as a high-temperature filter" J. of Materials Processing Technology, 96, pp. 151-156 (1999). |
Okamoto et al., "Luminescent Properties of Pr3+ − sensitized LaPO4: Gd3+ Ultraviolet-B Phosphor Under Vacuum-Ultraviolet Light Excitation," J. App. Phys. 106, 013522 (2009). |
O'Malley et al. "Structure and properties of ordered Li2IrO3 and Li2PtO3" Journal of Solid State Chemistry 181, pp. 1803-1809 (2008). |
Ovanesyan et al. "Atomic Layer Deposition of SiCxNy Using Si2C16 and CH3NH2 Plasma" Chem. Mater. 2017, 29, pp. 6269-6278 (2017). |
Oyama et al. "Topotactic synthesis of vanadium nitride solid foams" Journal of Materials Research vol. 8. No.6, pp. 1450-1454 (1993). |
Park et al. "Atomic layer deposition of Y2O3 films using hetroleptic liquid (iPrCp)2Y(iPr-amd) precursor" J. Mater. Chem. C, 2, 9 pages (2014). |
Park et al. "Superfilling CVD of copper using a catalytic surfactant" Proceedings of the IEEE 2001 International Interconnect Technology Conference, 3 pages (2001). |
Park, "Substituted Aluminum Metal Gate on High-K Dielectric for Low Work-Function and Fermi-Level Pinning Free," 4 pages, IEEE 0-7803-8684-1/04 (2004). |
Peters et al., "Aerosol-Assisted Chemical Vapor Deposition of NbS2 and TaS2 Thin Films from Pentakis(dimethylamido)metal Complexes and 2-Methylpropanethiol" Eur. J. Inorg. Chem., p. 4179-. |
Peters et al., "Aerosol-Assisted Chemical Vapor Deposition of NbS2 and TaS2 Thin Films from Pentakis(dimethylamido)metal Complexes and 2-Methylpropanethiol" Eur. J. Inorg. Chem., pp. 4179-4185 (2005). |
Petrov et al. "l,1,2,2-Tetrafluoroethyl-N,N-dimethylamine: a new selective fluorinating agent" J of Fluorine Chemistry, 109, pp. 25-31 (2001). |
PICHLER. "Intrinsic Point Defects, Impurities and Their Diffusion in Silicon," Springer-Verlag Wien, p. 367 (2004). |
Popov et al. "Atomic Layer Deposition of PbI2 Thin Films" Chem. Mater. 31, pp. 1101-1109 (2019). |
Popovici et al. "High-performance (EOT<0.4nm, Jg˜10-7 A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor" 2018 IEEE International Electron Devices Meeting (IEDM), 4 pages (2018). |
Portet et al., "Impact of Synthesis Conditions on Surface Chemistry and Structure of Carbide-Derived Carbons," Thermochimica Acta, 497, 137-142 (2010). |
Posseme et al. "Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium" Apply. Phys. Lett. 105, 051604, pp. 1-4 (2014). |
Potts et al., "Low Temperature Plasma-Enhanced Atomic Layer Deposition of metal Oxide Thin Films," Journal of the Electrochemical Society, 157, 66-74 (2010). |
Potts et al., "Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD", Chemical Vapor Deposition, vol. 19, pp. 125-133 (2013). |
Presser, et al., "Effect of Pore Size on Carbon Dioxide Sorption by Carbide Derived Carbon," Energy & Environmental Science 4.8, 3059-3066 (2011). |
Provine et al. "Atomic Layer Deposition: Introduction to the Theory and Cambridge Nanotech Savannah & Fiji" NNIN ALD Roadshow Presentation, 49 pages (2012). |
Provine et al., "Correlation of Film Density and Wet Etch Rate in Hydrofluoric Acid of Plasma Enhanced Atomic Layer Deposited Silicon Nitride," AIP Advances, 6 (2016). |
Putkonen et al. "Low-Temperature Ale Deposition of Y2O3 Thin Films from β-Diketonate Precursors" Chemical Vapor Deposition 7(1) pp. 44-50 (2001). |
Puurunen "Surface Chemistry of Atomic Layer Depostion: A Case Study for the Trimethylaluminum/Water Process" Journal of Applied Physics, 97, 55 pages (2005). |
Qin et al., "Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction," ACS Appl. Mater. Interfaces, 9(18), p. 15583-15591 (2007). |
Radamson et al. "Growth of Sn-alloyed Group IV Materials for Photonic and Electronic Applications" Chapter 5 pp. 129-144, Manufacturing Nano Structures (2014). |
Rahemi et al. "Variation in electron work function with temperature and its effect on the Young's modulus of metals" Scripta Materialia, 99, pp. 41-44 (2015). |
Rhenium trioxide; https://en.wikipedia.org/wiki/Rhenium_trioxide [online]; last edited on Feb. 18, 2017. |
Rimoldi et al. "Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework" Applied Materials & Interfaces, 9, pp. 35067-35074 (2017). |
Roddy, "Transport Reactions and Vaporization Studies of Some Vanadium Halides", Iowa State university of Science and Technology dissertation, 207 pages (1962). |
Rosemount 1199 Diaphragm Seal Systems, Product Data Sheet, 92 pages (2008). |
Rossing et al. "Acoustics of Eastern and Western bells, Old and New" J of Acoustical Society of Japan; 10(5); pp. 241-252 (1989). |
Ryu et al., "Persistent Charge-Density-Wave Order in Single-Layer TaSe2" Nano. Lett. 18, pp. 689-694 (2018). |
Saeki et al. "Reaction Process of Vanadium Tetrachloride with Ammonia in the Vapor Phase and Properties of the Vanadium Nitride Formed" Bull. Chem. Soc. Jpn., 55, pp. 3446-3449 (1982). |
Sakuma et al., "Highly Scalable Horizontal Channel 3-D Nand Memory Excellent in Compatibility with Conventional Fabrication Technology," IEEE Electron Device Letters, vol. 34, No. 9, 1142-1144 (2013). |
Salim et al., "In Situ Concentration Monitoring in a Vertical OMVPE Reactor by Fiber-Optics-Based Fourier Transform Infrared Spectroscopy," Journal of Crystal Growth 169, pp. 443-449, Elsevier Science B.V. (1996). |
Salim, "In-situ Fourier Transform Infrared Spectroscopy of Chemistry and Growth in Chemical Vapor Deposition," Massachusetts Institute of Technology, 187 pages (1995). |
Samal et al., "Low-Temperature (<200°C) Plasma Enhanced Atomic Deposition of Dense Titanium Nitride Thin Films" (2012). |
Sanders et al., "Crystalline and electronic structure of single-layer TaS2" Phys. Rev. B. 94, 081404, 6 pages (2016). |
Schindler, Dissertation, Next Generation High-k Dielectrics for DRAM Produced by Atomic Layer Deposition Studied by Transmission Electron Microscopy (2015). |
Schmatz et al., "Unusual Isomerization Reactions in 1.3-Diaza-2-Silcyclopentanes," Organometallics, 23, 1180-1182 (2004). |
Scientific and Technical Information Center EIC 2800 Search Report dated Feb. 16, 2012. |
SciFinder Search Results on hydrazido-based precursor for boron nitride films, search conducted Nov. 5, 2020, 5 pages (2020). |
Sellers, Making Your Own Timber Dogs, Paul Sellers blog, Published on Nov. 18, 2014, [online], [site visted Jun. 10, 2017]. Available from Internet, <URL: https://paulsellers.com/2014/11/making-your-own-timber-dogs/>. |
Selvaraj et al., "Selective Atomic Layer Deposition of Zirconia on Copper Patterned Silicon Substrates Using Ethanol as Oxygen Source as Well as Copper Reductant," J. Vac. Sci. Technol. A32(1), (2014). |
Selvaraj et al., "Surface Selective Atomic Layer Deposition of Hafnium Oxide for Copper Diffusion Barrier Application Using Tetrakis (diethylamino) Hafnium and Ethanol," 225th ECS Meeting, Meeting Abstract, (May 12, 2014). |
Senateur et al. "Pulsed Injection MOCVD of Functional Electronic Oxides" Adv. Mater. Opt. Electron, 10, pp. 155-161 (2000). |
Seshadri et al., "Ultrathin Extreme Ultraviolet Patterning Stack Using Polymer Brush As An Adhesion Promotion Layer," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(3) (2017). |
Shamma et al., "PDL Oxide Enabled Doubling," Proc. Of SPIE, 6924, 69240D, 1-10 (2008). |
Shevtsov et al. "An Apparatus for Pulse Chemical Vapor Deposition of Layers" Instruments and Experimental Techniques, vol. 56, No. 3, pp. 353-357 (2013). |
Shevtsov et al. "Effect of Spatial Image Transfer in a Pulse MOCVD Process" Physics Procedia 46, pp. 27-32 (2013). |
Shiba et al. "Stable yttrium oxyfluoride used in plasma process chamber" J. Vac. Sci. Technol. A, 35(2), 6 pages (2017). |
Shigemoto et al. "Thermal cleaning of silicon nitride with fluorine and additive mixture" 1 page (2007). |
Simchi et al., "Sulfidation of 2D transition metals (Mo, W, Re, Nb, Ta): thermodynamics, processing, and characterization" J. Materials Science 52: 17, 9 pages (2017). |
Spear et al., "Chemical Transport Reactions in the Vanadium-Silicon-Oxygen System and the Ternary Phase Diagram", Journal of the Less-Common Metals, 14, pp. 69-75 (1968). |
Standard Motor Products LX249 Ignition Pick Up, Nov. 11, 2005, Amazon.com, May 10, 2021. URL: https://www.amazon.com/Standard-Motor-Products-LX249-Ignition/dp/B000C7ZTS4/ (2005). |
Stanley et al. "Feedgas for Modem High-Performance Ozone Generators" Ozonia Ltd., Duebendorf, Switzerland. 7 pages. Available Jul. 14, 2017 online at: http://www.degremont-technologies.com/cms_medias/pdf/tech_ozonia_feedgas.pdf (1999). |
Stannowski et al. "Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition" J Applied Physics, vol. 93 No. 5, 9 pages (2013). |
Su et al. "A Polymer Precursor Route to Metal Borides", Chem. Mater., 5, pp. 1659-1668 (1993). |
Svetin et al., "Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2" Nature, Scientific Reports Apr. 12, 2017, 7:46048, 10 pages (2017). |
Takaoka et al. "F-Propene-Dialkylamine Reaction Products as Fluorinating Agents" Bulletin of the Chemical Socity of Japan, vol. 52 (11), pp. 3377-3380 (1979). |
Tao et al. "Improved performance of GeON as charge storage layer in flash memory by optimal annealing" Microelectronics Reliability, vol. 52, pp. 2597-2601 (2012). |
Tatehaba et al., "Adhesion Energy of Polystyrene and Substrate in Function Water," 5th International Symposium of Cleaning Technology in Semiconductor Device Manufacturing, pp. 560-565 (1998). |
Tidman et al. "Resistivity of thin TaS2 crystals," Can. J. Phys., vol. 54, 2306-2309 (1976). |
TIPO; Notice of Allowance dated Apr. 10, 2018 in Application No. 103106021. |
TIPO; Notice of Allowance dated Apr. 10, 2018 in Application No. 103106022. |
TIPO; Notice of Allowance dated Apr. 11, 2018 in Application No. 105308015D01. |
TIPO; Notice of Allowance dated Apr. 12, 2019 in Application No. 104132991. |
TIPO; Notice of Allowance dated Apr. 19, 2017 in Application No. 102132952. |
TIPO; Notice of Allowance dated Apr. 19, 2018 in Application No. 103134537. |
TIPO; Notice of Allowance dated Apr. 25, 2018 in Application No. 103124509. |
TIPO; Notice of Allowance dated Apr. 26, 2019 in Application No. 104107888. |
TIPO; Notice of Allowance dated Apr. 28, 2015 in Application No. 99114330. |
TIPO; Notice of Allowance dated Aug. 10, 2021 in Application No. 106129971. |
TIPO; Notice of Allowance dated Aug. 19, 2016 in Application No. 101142582. |
TIPO; Notice of Allowance dated Aug. 24, 2018 in Application No. 102126071. |
TIPO; Notice of Allowance dated Aug. 24, 2021 in Application No. 106124129. |
TIPO; Notice of Allowance dated Aug. 29, 2017 in Application No. 102129397. |
TIPO; Notice of Allowance dated Aug. 29, 2018 in Application No. 107300633. |
TIPO; Notice of Allowance dated Aug. 31, 2020 in Application No. 105122586. |
TIPO; Notice of Allowance dated Dec. 10, 2019 in Application No. 105112363. |
TIPO; Notice of Allowance dated Dec. 10, 2020 in Application No. 106108152. |
TIPO; Notice of Allowance dated Dec. 11, 2017 in Application No. 103127734. |
TIPO; Notice of Allowance dated Dec. 26, 2017 in Application No. 102115605. |
TIPO; Notice of Allowance dated Dec. 5, 2017 in Application No. 105308015. |
TIPO; Notice of Allowance dated Feb. 10, 2020 in Application No. 105115513. |
TIPO; Notice of Allowance dated Feb. 13, 2017 in Application No. 102113028. |
TIPO; Notice of Allowance dated Feb. 13, 2020 in Application No. 105122715. |
TIPO; Notice of Allowance dated Feb. 20, 2020 in Application No. 102125191. |
TIPO; Notice of Allowance dated Feb. 21, 19 in Application No. 107303723. |
TIPO; Notice of Allowance dated Feb. 24, 2016 in Application No. 99110511. |
TIPO; Notice of Allowance dated Feb. 24, 2021 in Application No. 106113604. |
TIPO; Notice of Allowance dated Jan. 11, 2021 in Application No. 108307599D01. |
TIPO; Notice of Allowance dated Jan. 11, 2021 in Application No. 109300591. |
TIPO; Notice of Allowance dated Jan. 11, 2021 in Application No. 109300593. |
TIPO; Notice of Allowance dated Jan. 15, 2020 in Application No. 105114105. |
TIPO; Notice of Allowance dated Jan. 16, 2020 in Application No. 107116804. |
TIPO; Notice of Allowance dated Jan. 22, 2018 in Application No. 103117477. |
TIPO; Notice of Allowance dated Jan. 24, 2018 in Application No. 103101400. |
TIPO; Notice of Allowance dated Jan. 25, 2021 in Application No. 106111548. |
TIPO; Notice of Allowance dated Jan. 26, 2017 in Application No. 102131839. |
TIPO; Notice of Allowance dated Jan. 28, 2015 in Application No. 99114329. |
TIPO; Notice of Allowance dated Jan. 29, 2019 in Application No. 103132230. |
TIPO; Notice of Allowance dated Jan. 29, 2021 in Application No. 105142668. |
TIPO; Notice of Allowance dated Jan. 7, 2020 in Application No. 102136496. |
TIPO; Notice of Allowance dated Jul. 1, 2020 in Application No. 105101537. |
TIPO; Notice of Allowance dated Jul. 10, 2019 in Application No. 103123439. |
TIPO; Notice of Allowance dated Jul. 15, 2020 in Application No. 108307027. |
TIPO; Notice of Allowance dated Jul. 18, 2017 in Application No. 102127065. |
TIPO; Notice of Allowance dated Jul. 19, 2019 in Application No. 104122890. |
TIPO; Notice of Allowance dated Jul. 27, 2021 in Application No. 110302670. |
TIPO; Notice of Allowance dated Jul. 28, 2021 in Application No. 106129491. |
TIPO; Notice of Allowance dated Jul. 29, 2021 in Application No. 110301101. |
TIPO; Notice of Allowance dated Jul. 30, 2021 in Application No. 105134275. |
TIPO; Notice of Allowance dated Jul. 30, 2021 in Application No. 106143570. |
TIPO; Notice of Allowance dated Jun. 12, 2014 in Application No. 98117513. |
TIPO; Notice of Allowance dated Jun. 13, 2018 in Application No. 103138510. |
TIPO; Notice of Allowance dated Jun. 19, 2018 in Application No. 103127588. |
TIPO; Notice of Allowance dated Jun. 19, 2019 in Application No. 104124377. |
TIPO; Notice of Allowance dated Jun. 29, 2016 in Applicaton No. 100113130. |
TIPO; Notice of Allowance dated Jun. 3, 2021 in Application No. 106123203. |
TIPO; Notice of Allowance dated Jun. 30, 2021 in Application No. 106121797. |
TIPO; Notice of Allowance dated Jun. 30, 2021 in Application No. 110301018. |
TIPO; Notice of Allowance dated Jun. 4, 2021 in Application No. 105131896. |
TIPO; Notice of Allowance dated Jun. 5, 2018 in Application No. 106117181. |
TIPO; Notice of Allowance dated Jun. 9, 2021 in Application No. 109303437. |
TIPO; Notice of Allowance dated Mar. 12, 2020 in Application No. 108129100. |
TIPO; Notice of Allowance dated Mar. 13, 2018 in Application No. 103117478. |
TIPO; Notice of Allowance dated Mar. 13, 2020 in Application No. 105119533. |
TIPO; Notice of Allowance dated Mar. 14, 2016 in Application No. 99127063. |
TIPO; Notice of Allowance dated Mar. 25, 2021 in Application No. 106124130. |
TIPO; Notice of Allowance dated Mar. 3, 2017 in Application No. 102129262. |
TIPO; Notice of Allowance dated Mar. 30, 2021 in Application No. 109305460. |
TIPO; Notice of Allowance dated Mar. 4, 2021 in Application No. 106100823. |
TIPO; Notice of Allowance dated Mar. 4, 2021 in Application No. 106111693. |
TIPO; Notice of Allowance dated Mar. 5, 2021 in Application No. 105131284. |
TIPO; Notice of Allowance dated May 13, 2021 in Application No. 105122394. |
TIPO; Notice of Allowance dated May 18, 2021 in Application No. 109300595. |
TIPO; Notice of Allowance dated May 4, 2020 in Application No. 105101536. |
TIPO; Notice of Allowance dated May 6, 2021 in Application No. 106108522. |
TIPO; Notice of Allowance dated May 7, 2019 in Application No. 105104453. |
TIPO; Notice of Allowance dated May 8, 2019 in Application No. 104110326. |
TIPO; Notice of Allowance dated May 9, 2019 in Application No. 104107876. |
TIPO; Notice of Allowance dated Nov. 2, 2016 in Application No. 101142581. |
TIPO; Notice of Allowance dated Nov. 24, 2020 in Application No. 108307599. |
TIPO; Notice of Allowance dated Nov. 27, 2019 in Application No. 104141679. |
TIPO; Notice of Allowance dated Nov. 30, 2017 in Application No. 103102563. |
TIPO; Notice of Allowance dated Oct. 1, 2021 in Application No. 110118827. |
TIPO; Notice of Allowance dated Oct. 12, 2021 in Application No. 106135925. |
TIPO; Notice of Allowance dated Oct. 16, 2015 in Application No. 99114331. |
TIPO; Notice of Allowance dated Oct. 17, 2017 in Application No. 103136251. |
TIPO; Notice of Allowance dated Oct. 19, 2016 in Application No. 101124745. |
TIPO; Notice of Allowance dated Oct. 19, 2020 in Application No. 108306935. |
TIPO; Notice of Allowance dated Oct. 19, 2020 in Application No. 108306935D01. |
TIPO; Notice of Allowance dated Oct. 19, 2020 in Application No. 108307027D01. |
TIPO; Notice of Allowance dated Oct. 2, 2015 in Application No. 100130472. |
TIPO; Notice of Allowance dated Oct. 20, 2017 in Application No. 103105251. |
TIPO; Notice of Allowance dated Oct. 4, 2019 in Application No. 104122889. |
TIPO; Notice of Allowance dated Sep. 1, 2021 in Application No. 106122231. |
TIPO; Notice of Allowance dated Sep. 11, 2018 in Application No. 103139014. |
TIPO; Notice of Allowance dated Sep. 15, 2020 in Application No. 108307301. |
TIPO; Notice of Allowance dated Sep. 18, 2018 in Application No. 104111910. |
TIPO; Notice of Allowance dated Sep. 20, 2019 in Application No. 106138800. |
TIPO; Notice of Allowance dated Sep. 22, 2021 in Application No. 104108277. |
TIPO; Notice of Allowance dated Sep. 23, 2019 in Application No. 104105965. |
TIPO; Notice of Allowance dated Sep. 24, 2021 in Application No. 106143559. |
TIPO; Notice of Allowance dated Sep. 25, 2017 in Application No. 103120478. |
TIPO; Notice of Allowance dated Sep. 25, 2020 in Application No. 105130130. |
TIPO; Notice of Allowance dated Sep. 25, 2020 in Application No. 108307759. |
TIPO; Notice of Allowance dated Sep. 27, 2019 in Application No. 104105533. |
TIPO; Notice of Allowance dated Sep. 3, 2021 in Application No. 106115126. |
TIPO; Notice of Allowance dated Sep. 4, 2020 in Application No. 105111990. |
TIPO; Notice of Allowance dated Sep. 9, 2021 in Application No. 105129977. |
TIPO; Office Action dated 11/6//2017 in Application No. 106117181. |
TIPO; Office Action dated Apr. 14, 2020 in Application No. 105129977. |
TIPO; Office Action dated Apr. 22, 2021 in Application No. 106124126. |
TIPO; Office Action dated Apr. 22, 2021 in Application No. 106124128. |
TIPO; Office Action dated Apr. 25, 2019 in Application No. 104141679. |
TIPO; Office Action dated Apr. 25, 2019 in Application No. 105101536. |
TIPO; Office Action dated Apr. 26, 2021 in Application No. 106122231. |
TIPO; Office Action dated Apr. 28, 2016 in Application No. 101142582. |
TIPO; Office Action dated Apr. 29, 2019 in Application No. 104122889. |
TIPO; Office Action dated Apr. 7, 2021 in Application No. 106135925. |
TIPO; Office Action dated Apr. 7, 2021 in Application No. 106136905. |
TIPO; Office Action dated Aug. 1, 2016 in Application No. 101124745. |
TIPO; Office Action dated Aug. 10, 2021 in Application No. 107103230. |
TIPO; Office Action dated Aug. 11, 2020 in Application No. 106100823. |
TIPO; Office Action dated Aug. 14, 2014 in Application No. 99114331. |
TIPO; Office Action dated Aug. 16, 2019 in Application No. 102136496. |
TIPO; Office Action dated Aug. 16, 2021 in Application No. 107114888. |
TIPO; Office Action dated Aug. 17, 2020 in Application No. 108139018. |
TIPO; Office Action dated Aug. 2016 in Application No. 102115605. |
TIPO; Office Action dated Aug. 21, 2020 in Application No. 106111548. |
TIPO; Office Action dated Aug. 24, 2017 in Application No. 103136251. |
TIPO; Office Action dated Aug. 25, 2020 in Application No. 105131896. |
TIPO; Office Action dated Aug. 27, 2014 in Application No. 99114329. |
TIPO; Office Action dated Aug. 27, 2019 in Application No. 107116804. |
TIPO; Office Action dated Aug. 3, 2021 in Application No. 107105982. |
TIPO; Office Action dated Aug. 30, 2013 in Application No. 97132391. |
TIPO; Office Action dated Aug. 31, 2018 in Application No. 106138119. |
TIPO; Office Action dated Aug. 5, 2021 in Application No. 106143566. |
TIPO; Office Action dated Aug. 7, 2018 Application No. 104107888. |
TIPO; Office Action dated Dec. 13, 2019 in Application No. 105101536. |
TIPO; Office Action dated Dec. 13, 2019 in Application No. 105111990. |
TIPO; Office Action dated Dec. 19, 2014 in Application No. 99127063. |
TIPO; Office Action dated Dec. 2, 2016 in Application No. 102136496. |
TIPO; Office Action dated Dec. 2, 2020 in Application No. 105131896. |
TIPO; Office Action dated Dec. 20, 2013 in Application No. 98117513. |
TIPO; Office Action dated Dec. 21, 2020 in Application No. 106122231. |
TIPO; Office Action dated Dec. 24, 2019 in Application No. 108105002. |
TIPO; Office Action dated Dec. 26, 2014 in Application No. 99114330. |
TIPO; Office Action dated Dec. 26, 2018 in Application No. 106127690. |
TIPO; Office Action dated Dec. 29, 2016 in Application No. 102129397. |
TIPO; Office Action dated Dec. 29, 2020 in Application No. 106124126. |
TIPO; Office Action dated Dec. 6, 2016 in Application No. 102126071. |
TIPO; Office Action dated Dec. 9, 2020 in Application No. 106124128. |
TIPO; Office Action dated Dec. 9, 2020 in Application No. 106124130. |
TIPO; Office Action dated Feb. 10, 2017 in Application No. 102127065. |
TIPO; Office Action dated Feb. 19, 2016 in Application No. 100113130. |
TIPO; Office Action dated Feb. 21, 2020 in Application No. 108120947. |
TIPO; Office Action dated Feb. 22, 2019 in Application No. 104105533. |
TIPO; Office Action dated Feb. 23, 2017 in Application No. 103102563. |
TIPO; Office Action dated Feb. 24, 2017 in Application No. 102115605. |
TIPO; Office Action dated Feb. 25, 2021 in Application No. 105134275. |
TIPO; Office Action dated Feb. 25, 2021 in Application No. 106121797. |
TIPO; Office Action dated Feb. 26, 2018 in Application No. 103138510. |
TIPO; Office Action dated Feb. 3, 2020 in Application No. 108114221. |
TIPO; Office Action dated Feb. 8, 2021 in Application No. 106133152. |
TIPO; Office Action dated Jan. 10, 2018 in Application No. 102136496. |
TIPO; Office Action dated Jan. 11, 2021 in Application No. 109300594. |
TIPO; Office Action dated Jan. 15, 2021 in Application No. 108142842. |
TIPO; Office Action dated Jan. 17, 2020 in Application No. 104108277. |
TIPO; Office Action dated Jan. 17, 2020 in Application No. 105122586. |
TIPO; Office Action dated Jan. 17, 2020 in Application No. 107127688. |
TIPO; Office Action dated Jan. 20, 2020 in Application No. 105122394. |
TIPO; Office Action dated Jan. 20, 2021 in Application No. 106129491. |
TIPO; Office Action dated Jan. 25, 2021 in Application No. 106124129. |
TIPO; Office Action dated Jan. 25, 21 in Application No. 108143562. |
TIPO; Office Action dated Jan. 30, 2019 in Application No. 104122890. |
TIPO; Office Action dated Jan. 6, 2021 in Application No. 106115126. |
TIPO; Office Action dated Jan. 7, 2019 in Application No. 104132991. |
TIPO; Office Action dated Jan. 7, 2019 in Application No. 106138800. |
TIPO; Office Action dated Jul. 11, 2018 in Application No. 104124377. |
TIPO; Office Action dated Jul. 13, 2021 in Application No. 106138996. |
TIPO; Office Action dated Jul. 15, 2020 in Application No. 106120365. |
TIPO; Office Action dated Jul. 17, 2017 in Application No. 103101400. |
TIPO; Office Action dated Jul. 4, 2014 in Application No. 99110511. |
TIPO; Office Action dated Jul. 5, 2017 in Application No. 103117477. |
TIPO; Office Action dated Jul. 5, 2019 in Application No. 105112363. |
TIPO; Office Action dated Jul. 9, 2018 in Application No. 104107876. |
TIPO; Office Action dated Jul. 9, 2018 in Application No. 104110326. |
TIPO; Office Action dated Jul. 9, 2020 in Application No. 108137227. |
TIPO; Office Action dated Jun. 13, 2018 in Application No. 104111910. |
TIPO; Office Action dated Jun. 15, 2021 in Application No. 106133152. |
TIPO; Office Action dated Jun. 17, 2020 in Application No. 106108152. |
TIPO; Office Action dated Jun. 2, 2021 in Application No. 105129977. |
TIPO; Office Action dated Jun. 20, 2017 in Application No. 102125191. |
TIPO; Office Action dated Jun. 21, 2021 in Application No. 106120902. |
TIPO; Office Action dated Jun. 22, 2018 in Application No. 104105533. |
TIPO; Office Action dated Jun. 22, 2021 in Application No. 104108277. |
TIPO; Office Action dated Jun. 24, 2020 in Application No. 108135004. |
TIPO; Office Action dated Jun. 25, 2018 in Application No. 106138800. |
TIPO; Office Action dated Jun. 28, 2019 in Application No. 108102948. |
TIPO; Office Action dated Jun. 29, 2020 in Application No. 108137226. |
TIPO; Office Action dated Jun. 4, 2019 in Application No. 107123992. |
TIPO; Office Action dated Jun. 7, 2021 in Application No. 107103230. |
TIPO; Office Action dated Mar. 15, 2021 in Application No. 106129971. |
TIPO; Office Action dated Mar. 17, 2020 in Application No. 105130130. |
TIPO; Office Action dated Mar. 29, 2021 in Application No. 106143559. |
TIPO; Office Action dated Mar. 3, 2017 in Application No. 103105251. |
TIPO; Office Action dated Mar. 31, 2021 in Application No. 106143570. |
TIPO; Office Action dated Mar. 4, 2021 in Application No. 106127948. |
TIPO; Office Action dated May 17, 2018 in Application No. 102126071. |
TIPO; Office Action dated May 19, 2017 in Application No. 103120478. |
TIPO; Office Action dated May 21, 2018 in Application No. 103139014. |
TIPO; Office Action dated May 26, 2021 in Application No. 106143568. |
TIPO; Office Action dated May 28, 2019 in Application No. 107125586. |
TIPO; Office Action dated May 6, 2019 in Application No. 104108277. |
TIPO; Office Action dated Nov. 1, 2017 in Application No. 103106021. |
TIPO; Office Action dated Nov. 11, 2016 in Application No. 102132952. |
TIPO; Office Action dated Nov. 12, 2020 in Application No. 106120365. |
TIPO; Office Action dated Nov. 13, 2019 in Application No. 108115406. |
TIPO; Office Action dated Nov. 15, 2016 in Application No. 102125191. |
TIPO; Office Action dated Nov. 18, 2020 in Application No. 106120902. |
TIPO; Office Action dated Nov. 19, 2018 in Application No. 104105965. |
TIPO; Office Action dated Nov. 20, 2017 in Application No. 103127588. |
TIPO; Office Action dated Nov. 20, 2018 in Application No. 107118271. |
TIPO; Office Action dated Nov. 22, 2017 in Application No. 103117478. |
TIPO; Office Action dated Nov. 22, 2017 in Application No. 103134537. |
TIPO; Office Action dated Nov. 3, 2016 in Application No. 102129262. |
TIPO; Office Action dated Nov. 3, 2016 in Application No. 102131839. |
TIPO; Office Action dated Nov. 6, 2019 in Application No. 105101537. |
TIPO; Office Action dated Nov. 8, 2017 in Application No. 103124509. |
TIPO; Office Action dated Oct. 1, 2019 in Application No. 105114105. |
TIPO; Office Action dated Oct. 18, 2021 in Application No. 109300594. |
TIPO; Office Action dated Oct. 28, 2019 in Application No. 105122715. |
TIPO; Office Action dated Oct. 3, 2018 in Application No. 106142731. |
TIPO; Office Action dated Oct. 3, 2019 in Application No. 105119533. |
TIPO; Office Action dated Oct. 31, 2017 in Application No. 103106022. |
TIPO; Office Action dated Oct. 7, 2020 in Application No. 106108522. |
TIPO; Office Action dated Oct. 8, 2020 in Application No. 106111693. |
TIPO; Office Action dated Oct. 8, 2020 in Application No. 106123203. |
TIPO; Office Action dated Sep. 13, 2021 in Application No. 109119438. |
TIPO; Office Action dated Sep. 18, 2020 in Application No. 105129977. |
TIPO; Office Action dated Sep. 19, 2016 in Application No. 102113028. |
TIPO; Office Action dated Sep. 19, 2017 in Application No. 103127734. |
TIPO; Office Action dated Sep. 20, 2018 in Application No. 103123439. |
TIPO; Office Action dated Sep. 26, 2018 in Application No. 103132230. |
TIPO; Office Action dated Sep. 28, 2018 in Application No. 106119537. |
TIPO; Office Action dated Sep. 28, 2018 in Application No. 107112951. |
TIPO; Office Action dated Sep. 28, 2021 in Application No. 109112983. |
TIPO; Office Action dated Sep. 30, 2020 in Application No. 105142668. |
TIPO; Office Action dated Sep. 30, 2020 in Application No. 106113604. |
TIPO; Office Action dated Sep. 7, 2020 in Application No. 105122394. |
TIPO; Office Action dated Sep. 8, 2021 in Application No. 107105788. |
TIPO; Office Action dated Sep. 9, 2019 in Application No. 105115513. |
TIPO; Office Action Received Aug. 25, 2020 in Application No. 105131284. |
Todi et al., "Characterization of Pt-Ru Binary Alloy Thin Films for Work Function Tuning," IEEE Electron Device Letters, vol. 27, No. 7, pp. 542-545 (2006). |
Tomozeiu et al. "Effects of UV photon irradiation on SiOx (0<x<2) structural properties" Applied Surface Science 253, pp. 376-380 (2006). |
Tseng et al., "Enhanced Block Copolymer Lithography Using Sequntial Infiltration Synthesis," Journal of Physical Chemistry, vol. 5, 17725-17729 (2011). |
Tseng et al., "Etch Properties of Resists Modified by Sequential Infiltration Synthesis," American Vacuum Society (2011). |
Tsoutsou et al. "Atomic layer deposition of LaxZrl-xO2-d (x=0.25) high-k dielectrics for advanced gate stacks" Applied Physics Letters, 94, 3 pages (2009). |
Ueda et al. "Enhanced Sidewall Grown (ESG) process: towards PEALD with conformality above 100%," Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, Nagoya, pp. 34-35 (2011). |
UPPTO; Notice of Allowance dated Oct. 21, 2014 in U.S. Appl. No. 13/439,528. |
UPSTO; Non-Final Office Action dated Jun. 27, 2019 in U.S. Appl. No. 14/793,323. |
UPSTO; Non-Final Office Action dated Oct. 2, 2019 in U.S. Appl. No. 15/798,201. |
US PPA 60394086 filed Jul. 3, 2002 in the name of Jacques Schmitt, and entitled "ALD on a Rotary Susceptor" pp. 1-23 (2002). |
US PPA 60545181 filed Feb. 13, 2004 in the names of Matthew G. Goodman et al., and entitled "Forced Flow Susceptor with Exit Holes and Veins for Improvided Process" pp. 1-15 (2004). |
US PPA 60591258 filed Jul. 26, 2004 in the names of Jeroen Stoutyesdijk et al., and entitled "Susceptor Support for Eliminating Backside Nodules" pp. 1-71 (2004). |
US PPA 62274238 filed Jan. 1, 2016 in the names of Alexander S. Polyak et al., and entitled "Non-Metallic Thermal CVD/ALD Gas Injector and Purge System" pp. 1-63 (2016). |
US PPA 62293897 filed Feb. 11, 2016 in the names of Bernardo Donoso et al., and entitled "Vapor Based Site-Isolated Processing Systems and Methods" pp. 1-51 (2016). |
US PPA 62504470 filed May 10, 2017 in the names of Jennifer Y. Sun et al., and entitled "Metal-Oxy-Fluoride Films for Chamber Components" pp. 1-82 (2017). |
USPTO Non-Final Office Action dated Dec. 10, 2020 in U.S. Appl. No. 15/380,921. |
USPTO: Final Office Action dated Jun. 4, 2018 in U.S. Appl. No. 15/222,749. |
USPTO; Advisory Action dated Apr. 12, 2018 in U.S. Appl. No. 14/568,647. |
USPTO; Advisory Action dated Apr. 13, 2021 in U.S. Appl. No. 14/829,565. |
USPTO; Advisory Action dated Apr. 15, 2016 in U.S. Appl. No. 13/646,471. |
USPTO; Advisory Action dated Apr. 16, 2015 in U.S. Appl. No. 13/563,066. |
USPTO; Advisory Action dated Apr. 19, 2018 in U.S. Appl. No. 13/651,144. |
USPTO; Advisory Action dated Apr. 2, 2020 in U.S. Appl. No. 15/402,993. |
USPTO; Advisory Action dated Apr. 20, 2004 in U.S. Appl. No. 09/771,673. |
USPTO; Advisory Action dated Apr. 20, 2017 in U.S. Appl. No. 14/829,565. |
USPTO; Advisory Action dated Apr. 20, 2017 in U.S. Appl. No. 14/884,695. |
USPTO; Advisory Action dated Apr. 21, 2017 in U.S. Appl. No. 13/166,367. |
USPTO; Advisory Action dated Apr. 22, 2015 in U.S. Appl. No. 13/411,271. |
USPTO; Advisory Action dated Apr. 23, 2020 in U.S. Appl. No. 15/940,759. |
USPTO; Advisory Action dated Apr. 24, 2020 in U.S. Appl. No. 14/219,839. |
USPTO; Advisory Action dated Apr. 24, 2020 in U.S. Appl. No. 14/219,879. |
USPTO; Advisory Action dated Apr. 28, 2021 in U.S. Appl. No. 15/262,990. |
USPTO; Advisory Action dated Apr. 28, 2021 in U.S. Appl. No. 15/940,729. |
USPTO; Advisory Action dated Apr. 29, 2016 in U.S. Appl. No. 14/218,374. |
USPTO; Advisory Action dated Apr. 3, 2020 in U.S. Appl. No. 16/000,125. |
USPTO; Advisory Action dated Apr. 3, 2020 in U.S. Appl. No. 16/251,534. |
USPTO; Advisory Action dated Apr. 30, 2021 in U.S. Appl. No. 15/377,439. |
USPTO; Advisory Action dated Apr. 5, 2021 in U.S. Appl. No. 16/176,517. |
USPTO; Advisory Action dated Apr. 6, 2016 in U.S. Appl. No. 13/727,324. |
USPTO; Advisory Action dated Aug. 10, 2018 in U.S. Appl. No. 14/829,565. |
USPTO; Advisory Action dated Aug. 11, 2020 in U.S. Appl. No. 16/242,829. |
USPTO; Advisory Action dated Aug. 16, 2021 in U.S. Appl. No. 16/202,941. |
USPTO; Advisory Action dated Aug. 17, 2016 in U.S. Appl. No. 14/508,296. |
USPTO; Advisory Action dated Aug. 2, 2016 in U.S. Appl. No. 14/246,969. |
USPTO; Advisory Action dated Aug. 2, 2021 in U.S. Appl. No. 16/172,535. |
USPTO; Advisory Action dated Aug. 22, 2016 in U.S. Appl. No. 14/219,879. |
USPTO; Advisory Action dated Aug. 23, 2017 in U.S. Appl. No. 15/203,632. |
USPTO; Advisory Action dated Aug. 24, 2015 in U.S. Appl. No. 14/065,114. |
USPTO; Advisory Action dated Aug. 24, 2020 in U.S. Appl. No. 16/132,142. |
USPTO; Advisory Action dated Aug. 24, 2021 in U.S. Appl. No. 15/491,726. |
USPTO; Advisory Action dated Aug. 25, 2016 in U.S. Appl. No. 14/606,364. |
USPTO; Advisory Action dated Aug. 25, 2020 in U.S. Appl. No. 16/105,745. |
USPTO; Advisory Action dated Aug. 26, 2014 in U.S. Appl. No. 13/312,591. |
USPTO; Advisory Action dated Aug. 27, 2002 in U.S. Appl. No. 09/807,580. |
USPTO; Advisory Action dated Aug. 27, 2021 in U.S. Appl. No. 15/925,532. |
USPTO; Advisory Action dated Aug. 30, 2021 in U.S. Appl. No. 15/380,921. |
USPTO; Advisory Action dated Aug. 6, 2020 in U.S. Appl. No. 15/690,017. |
USPTO; Advisory Action dated Aug. 8, 2018 in U.S. Appl. No. 15/377,439. |
USPTO; Advisory Action dated Aug. 9, 2012 in U.S. Appl. No. 12/618,419. |
USPTO; Advisory Action dated Dec. 10, 2020 in U.S. Appl. No. 16/000,109. |
USPTO; Advisory Action dated Dec. 11, 2014 in U.S. Appl. No. 13/912,666. |
USPTO; Advisory Action dated Dec. 14, 2020 in U.S. Appl. No. 16/000,156. |
USPTO; Advisory Action dated Dec. 15, 2020 in U.S. Appl. No. 15/835,328. |
USPTO; Advisory Action dated Dec. 15, 2020 in U.S. Appl. No. 16/000,125. |
USPTO; Advisory Action dated Dec. 17, 2014 in U.S. Appl. No. 13/181,407. |
USPTO; Advisory Action dated Dec. 21, 2016 in U.S. Appl. No. 14/090,750. |
USPTO; Advisory Action dated Dec. 21, 2016 in U.S. Appl. No. 14/568,647. |
USPTO; Advisory Action dated Dec. 21, 2020 in U.S. Appl. No. 16/172,535. |
USPTO; Advisory Action dated Dec. 22, 2020 in U.S. Appl. No. 16/004,041. |
USPTO; Advisory Action dated Dec. 24, 2020 in U.S. Appl. No. 15/925,532. |
USPTO; Advisory Action dated Dec. 29, 2016 in U.S. Appl. No. 13/651,144. |
USPTO; Advisory Action dated Dec. 4, 2018 in U.S. Appl. No. 15/434,051. |
USPTO; Advisory Action dated Feb. 12, 2016 in U.S. Appl. No. 13/651,144. |
USPTO; Advisory Action dated Feb. 14, 2017 in U.S. Appl. No. 14/835,637. |
USPTO; Advisory Action dated Feb. 15, 2017 in U.S. Appl. No. 13/169,951. |
USPTO; Advisory Action dated Feb. 15, 2018 in U.S. Appl. No. 14/752,712. |
USPTO; Advisory Action dated Feb. 16, 2021 in U.S. Appl. No. 16/151,074. |
USPTO; Advisory Action dated Feb. 17, 2021 in U.S. Appl. No. 16/108,950. |
USPTO; Advisory Action dated Feb. 20, 2015 in U.S. Appl. No. 14/183,187. |
USPTO; Advisory Action dated Feb. 22, 2021 in U.S. Appl. No. 15/962,980. |
USPTO; Advisory Action dated Feb. 25, 2021 in U.S. Appl. No. 16/210,922. |
USPTO; Advisory Action dated Feb. 28, 2020 in U.S. Appl. No. 16/038,024. |
USPTO; Advisory Action dated Feb. 3, 2012 in U.S. Appl. No. 12/416,809. |
USPTO; Advisory Action dated Feb. 4, 2019 in U.S. Appl. No. 13/169,951. |
USPTO; Advisory Action dated Feb. 7, 2020 in U.S. Appl. No. 15/896,986. |
USPTO; Advisory Action dated Feb. 8, 2018 in U.S. Appl. No. 13/169,951. |
USPTO; Advisory Action dated Jan. 12, 2017 in U.S. Appl. No. 14/188,760. |
USPTO; Advisory Action dated Jan. 14, 2021 in U.S. Appl. No. 16/055,532. |
USPTO; Advisory Action dated Jan. 17, 2020 in U.S. Appl. No. 15/636,307. |
USPTO; Advisory Action dated Jan. 21, 2020 in U.S. Appl. No. 15/860,564. |
USPTO; Advisory Action dated Jan. 22, 2019 in U.S. Appl. No. 14/219,839. |
USPTO; Advisory Action dated Jan. 22, 2019 in U.S. Appl. No. 14/219,879. |
USPTO; Advisory Action dated Jan. 22, 2021 in U.S. Appl. No. 16/252,567. |
USPTO; Advisory Action dated Jan. 24, 2002 in U.S. Appl. No. 09/452,844. |
USPTO; Advisory Action dated Jan. 26, 2021 in U.S. Appl. No. 16/251,534. |
USPTO; Advisory Action dated Jan. 27, 2021 in U.S. Appl. No. 16/397,045. |
USPTO; Advisory Action dated Jan. 3, 2018 in U.S. Appl. No. 14/188,760. |
USPTO; Advisory Action dated Jan. 3, 2020 in U.S. Appl. No. 15/135,258. |
USPTO; Advisory Action dated Jan. 30, 2018 in U.S. Appl. No. 14/090,750. |
USPTO; Advisory Action dated Jan. 30, 2020 in U.S. Appl. No. 15/262,990. |
USPTO; Advisory Action dated Jan. 8, 2021 in U.S. Appl. No. 15/923,834. |
USPTO; Advisory Action dated Jul. 1, 2013 in U.S. Appl. No. 12/847,848. |
USPTO; Advisory Action dated Jul. 13, 2011 in U.S. Appl. No. 12/553,759. |
USPTO; Advisory Action dated Jul. 13, 2016 in U.S. Appl. No. 13/791,246. |
USPTO; Advisory Action dated Jul. 14, 2016 in U.S. Appl. No. 13/791,339. |
USPTO; Advisory Action dated Jul. 15, 2021 in U.S. Appl. No. 16/468,258. |
USPTO; Advisory Action dated Jul. 2, 2020 in U.S. Appl. No. 15/962,980. |
USPTO; Advisory Action dated Jul. 22, 2019 in U.S. Appl. No. 14/829,565. |
USPTO; Advisory Action dated Jul. 22, 2019 in U.S. Appl. No. 15/262,990. |
USPTO; Advisory Action dated Jul. 23, 2013 in U.S. Appl. No. 12/618,355. |
USPTO; Advisory Action dated Jul. 27, 2021 in U.S. Appl. No. 15/402,993. |
USPTO; Advisory Action dated Jul. 29, 2016 in U.S. Appl. No. 13/941,226. |
USPTO; Advisory Action dated Jul. 29, 2019 in U.S. Appl. No. 15/402,993. |
USPTO; Advisory Action dated Jul. 8, 2013 in U.S. Appl. No. 12/953,870. |
USPTO; Advisory Action dated Jul. 8, 2020 in U.S. Appl. No. 16/105,761. |
USPTO; Advisory Action dated Jul. 8, 2021 in U.S. Appl. No. 16/546,543. |
USPTO; Advisory Action dated Jul. 9, 2013 in U.S. Appl. No. 12/193,924. |
USPTO; Advisory Action dated Jul. 9, 2014 in U.S. Appl. No. 12/910,607. |
USPTO; Advisory Action dated Jun. 11, 2021 in U.S. Appl. No. 15/690,017. |
USPTO; Advisory Action dated Jun. 11, 2021 in U.S. Appl. No. 15/909,705. |
USPTO; Advisory Action dated Jun. 12, 2014 in U.S. Appl. No. 13/102,980. |
USPTO; Advisory Action dated Jun. 16, 2016 in U.S. Appl. No. 14/498,036. |
USPTO; Advisory Action dated Jun. 19, 2020 in U.S. Appl. No. 15/691,241. |
USPTO; Advisory Action dated Jun. 2, 2021 in U.S. Appl. No. 15/967,146. |
USPTO; Advisory Action dated Jun. 22, 2017 in U.S. Appl. No. 15/203,642. |
USPTO; Advisory Action dated Jun. 22, 2020 in U.S. Appl. No. 14/829,565. |
USPTO; Advisory Action dated Jun. 26, 2015 in U.S. Appl. No. 13/791,246. |
USPTO; Advisory Action dated Jun. 29, 2015 in U.S. Appl. No. 13/901,372. |
USPTO; Advisory Action dated Jun. 30, 2016 in U.S. Appl. No. 14/219,839. |
USPTO; Advisory Action dated Jun. 5, 2020 in U.S. Appl. No. 15/890,037. |
USPTO; Advisory Action dated Jun. 9, 2020 in U.S. Appl. No. 16/158,077. |
USPTO; Advisory Action dated Mar. 10, 2021 in U.S. Appl. No. 16/117,530. |
USPTO; Advisory Action dated Mar. 15, 2019 in U.S. Appl. No. 15/592,730. |
USPTO; Advisory Action dated Mar. 16, 2020 in U.S. Appl. No. 15/726,959. |
USPTO; Advisory Action dated Mar. 25, 2020 in U.S. Appl. No. 15/815,483. |
USPTO; Advisory Action dated Mar. 25, 2021 in U.S. Appl. No. 15/636,307. |
USPTO; Advisory Action dated Mar. 27, 2013 in U.S. Appl. No. 13/406,791. |
USPTO; Advisory Action dated Mar. 28, 2016 in U.S. Appl. No. 13/283,408. |
USPTO; Advisory Action dated Mar. 31, 2014 in U.S. Appl. No. 13/550,419. |
USPTO; Advisory Action dated Mar. 31, 2020 in U.S. Appl. No. 15/286,503. |
USPTO; Advisory Action dated Mar. 4, 2016 in U.S. Appl. No. 12/618,355. |
USPTO; Advisory Action dated Mar. 6, 2012 in U.S. Appl. No. 12/436,300. |
USPTO; Advisory Action dated May 13, 2016 in U.S. Appl. No. 13/169,951. |
USPTO; Advisory Action dated May 13, 2016 in U.S. Appl. No. 13/665,366. |
USPTO; Advisory Action dated May 14, 2021 in U.S. Appl. No. 16/042,791. |
USPTO; Advisory Action dated May 15, 2020 in U.S. Appl. No. 15/923,834. |
USPTO; Advisory Action dated May 16, 2017 in U.S. Appl. No. 12/618,355. |
USPTO; Advisory Action dated May 18, 2015 in U.S. Appl. No. 13/184,351. |
USPTO; Advisory Action dated May 19, 2020 in U.S. Appl. No. 15/802,154. |
USPTO; Advisory Action dated May 2, 2018 in U.S. Appl. No. 14/997,683. |
USPTO; Advisory Action dated May 20, 2021 in U.S. Appl. No. 16/105,761. |
USPTO; Advisory Action dated May 26, 2020 in U.S. Appl. No. 15/798,201. |
USPTO; Advisory Action dated May 27, 2021 in U.S. Appl. No. 16/105,802. |
USPTO; Advisory Action dated May 28, 2021 in U.S. Appl. No. 16/039,817. |
USPTO; Advisory Action dated May 5, 2014 in U.S. Appl. No. 13/565,564. |
USPTO; Advisory Action dated May 5, 2016 in U.S. Appl. No. 14/090,750. |
USPTO; Advisory Action dated Nov. 10, 2015 in U.S. Appl. No. 14/079,302. |
USPTO; Advisory Action dated Nov. 14, 2014 in U.S. Appl. No. 13/646,471. |
USPTO; Advisory Action dated Nov. 16, 2005 in U.S. Appl. No. 10/222,229. |
USPTO; Advisory Action dated Nov. 17, 2020 in U.S. Appl. No. 16/116,708. |
USPTO; Advisory Action dated Nov. 20, 2020 in U.S. Appl. No. 15/611,707. |
USPTO; Advisory Action dated Nov. 26, 2018 in U.S. Appl. No. 15/683,701. |
USPTO; Advisory Action dated Nov. 27, 2019 in U.S. Appl. No. 15/917,224. |
USPTO; Advisory Action dated Nov. 5, 2019 in U.S. Appl. No. 15/879,209. |
USPTO; Advisory Action dated Nov. 6, 2015 in U.S. Appl. No. 14/457,058. |
USPTO; Advisory Action dated Nov. 7, 2013 in U.S. Appl. No. 13/184,351. |
USPTO; Advisory Action dated Nov. 9, 2020 in U.S. Appl. No. 15/402,993. |
USPTO; Advisory Action dated Oct. 1, 2014 in U.S. Appl. No. 12/436,306. |
USPTO; Advisory Action dated Oct. 1, 2021 in U.S. Appl. No. 16/108,950. |
USPTO; Advisory Action dated Oct. 21, 2021 in U.S. Appl. No. 15/974,948. |
USPTO; Advisory Action dated Oct. 22, 2003 in U.S. Appl. No. 09/807,580. |
USPTO; Advisory Action dated Oct. 22, 2019 in U.S. Appl. No. 15/205,827. |
USPTO; Advisory Action dated Oct. 27, 2020 in U.S. Appl. No. 15/974,948. |
USPTO; Advisory Action dated Oct. 28, 2019 in U.S. Appl. No. 14/508,489. |
USPTO; Advisory Action dated Oct. 29, 2013 in U.S. Appl. No. 13/406,791. |
USPTO; Advisory Action dated Oct. 4, 2017 in U.S. Appl. No. 13/184,351. |
USPTO; Advisory Action dated Oct. 5, 2017 in U.S. Appl. No. 14/219,879. |
USPTO; Advisory Action dated Oct. 5, 2021 in U.S. Appl. No. 17/009,093. |
USPTO; Advisory Action dated Oct. 7, 2004 in U.S. Appl. No. 10/222,229. |
USPTO; Advisory Action dated Oct. 7, 2020 in U.S. Appl. No. 15/996,286. |
USPTO; Advisory Action dated Sep. 11, 2020 in U.S. Appl. No. 16/219,555. |
USPTO; Advisory Action dated Sep. 16, 2020 in U.S. Appl. No. 16/152,260. |
USPTO; Advisory Action dated Sep. 2, 2015 in U.S. Appl. No. 13/597,108. |
USPTO; Advisory Action dated Sep. 20, 2019 in U.S. Appl. No. 15/589,861. |
USPTO; Advisory Action dated Sep. 21, 2016 in U.S. Appl. No. 14/457,058. |
USPTO; Advisory Action dated Sep. 21, 2021 in U.S. Appl. No. 15/726,959. |
USPTO; Advisory Action dated Sep. 23, 2019 in U.S. Appl. No. 15/672,119. |
USPTO; Decision on Appeal dated Feb. 16, 2005 in U.S. Appl. No. 09/807,580. |
USPTO; Ex Parte Quayle Action dated Apr. 13, 2021 in U.S. Appl. No. 29/679,620. |
USPTO; Ex Parte Quayle Action dated Aug. 6, 2021 in U.S. Appl. No. 16/563,473. |
USPTO; Ex Parte Quayle Action dated Dec. 17, 2019 in U.S. Appl. No. 29/615,000. |
USPTO; Ex Parte Quayle Action dated Mar. 21, 2019 in U.S. Appl. No. 15/615,489. |
USPTO; Examiner's Answer to Appeal Brief dated Apr. 20, 2018 in U.S. Appl. No. 13/187,300. |
USPTO; Examiner's Answer to Appeal Brief dated May 6, 2004 in U.S. Appl. No. 09/807,580. |
USPTO; Final Action dated Nov. 21, 2005 in U.S. Appl. No. 09/807,580. |
USPTO; Final Office Action dated Apr. 10, 2013 in U.S. Appl. No. 13/191,762. |
USPTO; Final Office Action dated Apr. 10, 2015 in U.S. Appl. No. 13/915,732. |
USPTO; Final Office Action dated Apr. 12, 2016 in U.S. Appl. No. 13/791,339. |
USPTO; Final Office Action dated Apr. 13, 2017 in U.S. Appl. No. 15/203,642. |
USPTO; Final Office Action dated Apr. 13, 2021 in U.S. Appl. No. 15/967,146. |
USPTO; Final Office Action dated Apr. 14, 2017 in U.S. Appl. No. 14/997,683. |
USPTO; Final Office Action dated Apr. 15, 2015 in U.S. Appl. No. 13/187,300. |
USPTO; Final Office Action dated Apr. 16, 2015 in U.S. Appl. No. 13/901,372. |
USPTO; Final Office Action dated Apr. 16, 2018 in U.S. Appl. No. 15/377,439. |
USPTO; Final Office Action dated Apr. 17, 2013 in U.S. Appl. No. 12/193,924. |
USPTO; Final Office Action dated Apr. 17, 2014 in U.S. Appl. No. 12/953,870. |
USPTO; Final Office Action dated Apr. 17, 2020 in U.S. Appl. No. 15/491,726. |
USPTO; Final Office Action dated Apr. 18, 2019 in U.S. Appl. No. 14/829,565. |
USPTO; Final Office Action dated Apr. 19, 2018 in U.S. Appl. No. 15/489,453. |
USPTO; Final Office Action dated Apr. 19, 2019 in U.S. Appl. No. 15/795,056. |
USPTO; Final Office Action dated Apr. 19, 2021 in U.S. Appl. No. 15/909,705. |
USPTO; Final Office Action dated Apr. 20, 2016 in U.S. Appl. No. 13/791,246. |
USPTO; Final Office Action dated Apr. 21, 2014 in U.S. Appl. No. 13/406,791. |
USPTO; Final Office Action dated Apr. 21, 2015 in U.S. Appl. No. 13/646,471. |
USPTO; Final Office Action dated Apr. 21, 2020 in U.S. Appl. No. 16/105,761. |
USPTO; Final Office Action dated Apr. 22, 2013 in U.S. Appl. No. 12/847,848. |
USPTO; Final Office Action dated Apr. 22, 2013 in U.S. Appl. No. 12/953,870. |
USPTO; Final Office Action dated Apr. 25, 2006 in U.S. Appl. No. 10/191,635. |
USPTO; Final Office Action dated Apr. 28, 2014 in U.S. Appl. No. 12/910,607. |
USPTO; Final Office Action dated Apr. 29, 2016 in U.S. Appl. No. 14/268,348. |
USPTO; Final Office Action dated Apr. 30, 2020 in U.S. Appl. No. 15/962,980. |
USPTO; Final Office Action dated Apr. 5, 2016 in U.S. Appl. No. 14/498,036. |
USPTO; Final Office Action dated Apr. 8, 2015 in U.S. Appl. No. 13/181,407. |
USPTO; Final Office Action dated Aug. 10, 2018 in U.S. Appl. No. 12/618,355. |
USPTO; Final Office Action dated Aug. 10, 2018 in U.S. Appl. No. 14/645,234. |
USPTO; Final Office Action dated Aug. 12, 2015 in U.S. Appl. No. 12/754,223. |
USPTO; Final Office Action dated Aug. 12, 2019 in U.S. Appl. No. 15/707,786. |
USPTO; Final Office Action dated Aug. 18, 2014 in U.S. Appl. No. 13/646,471. |
USPTO; Final Office Action dated Aug. 18, 2021 in U.S. Appl. No. 16/252,567. |
USPTO; Final Office Action dated Aug. 20, 2019 in U.S. Appl. No. 14/508,489. |
USPTO; Final Office Action dated Aug. 20, 2020 in U.S. Appl. No. 14/508,489. |
USPTO; Final Office Action dated Aug. 20, 2020 in U.S. Appl. No. 16/137,974. |
USPTO; Final Office Action dated Aug. 21, 2019 in U.S. Appl. No. 15/879,209. |
USPTO; Final Office Action dated Aug. 22, 2012 in U.S. Appl. No. 13/030,438. |
USPTO; Final Office Action dated Aug. 22, 2016 in U.S. Appl. No. 14/079,302. |
USPTO; Final Office Action dated Aug. 23, 2013 in U.S. Appl. No. 13/406,791. |
USPTO; Final Office Action dated Aug. 23, 2019 in U.S. Appl. No. 16/018,692. |
USPTO; Final Office Action dated Aug. 24, 2018 in U.S. Appl. No. 15/683,701. |
USPTO; Final Office Action dated Aug. 25, 2016 in U.S. Appl. No. 14/188,760. |
USPTO; Final Office Action dated Aug. 28, 2015 in U.S. Appl. No. 14/031,982. |
USPTO; Final Office Action dated Aug. 28, 2019 in U.S. Appl. No. 15/917,224. |
USPTO; Final Office Action dated Aug. 29, 2018 in U.S. Appl. No. 15/434,051. |
USPTO; Final Office Action dated Aug. 3, 2021 in U.S. Appl. No. 15/974,948. |
USPTO; Final Office Action dated Aug. 4, 2021 in U.S. Appl. No. 14/219,879. |
USPTO; Final Office Action dated Aug. 5, 2021 in U.S. Appl. No. 16/000,109. |
USPTO; Final Office Action dated Aug. 6, 2020 in U.S. Appl. No. 15/835,352. |
USPTO; Final Office Action dated Aug. 9, 2017 in U.S. Appl. No. 13/187,300. |
USPTO; Final Office Action dated Aug. 9, 2019 in U.S. Appl. No. 15/205,827. |
USPTO; Final Office Action dated Dec. 1, 2016 in U.S. Appl. No. 13/727,324. |
USPTO; Final Office Action dated Dec. 10, 2014 in U.S. Appl. No. 13/749,878. |
USPTO; Final Office Action dated Dec. 10, 2018 in U.S. Appl. No. 14/997,683. |
USPTO; Final Office Action dated Dec. 12, 2019 in U.S. Appl. No. 15/380,909. |
USPTO; Final Office Action dated Dec. 13, 2018 in U.S. Appl. No. 15/719,208. |
USPTO; Final Office Action dated Dec. 14, 2017 in U.S. Appl. No. 13/651,144. |
USPTO; Final Office Action dated Dec. 14, 2018 in U.S. Appl. No. 15/798,201. |
USPTO; Final Office Action dated Dec. 14, 2020 in U.S. Appl. No. 16/151,074. |
USPTO; Final Office Action dated Dec. 14, 2020 in U.S. Appl. No. 16/400,814. |
USPTO; Final Office Action dated Dec. 15, 2020 in U.S. Appl. No. 15/962,980. |
USPTO; Final Office Action dated Dec. 15, 2020 in U.S. Appl. No. 16/108,950. |
USPTO; Final Office Action dated Dec. 16, 2019 in U.S. Appl. No. 16/167,225. |
USPTO; Final Office Action dated Dec. 18, 2013 in U.S. Appl. No. 13/339,609. |
USPTO; Final Office Action dated Dec. 18, 2015 in U.S. Appl. No. 13/283,408. |
USPTO; Final Office Action dated Dec. 18, 2020 in U.S. Appl. No. 16/167,164. |
USPTO; Final Office Action dated Dec. 26, 2017 in U.S. Appl. No. 14/656,588. |
USPTO; Final Office Action dated Dec. 26, 2019 in U.S. Appl. No. 15/060,412. |
USPTO; Final Office Action dated Dec. 27, 2013 in U.S. Appl. No. 13/760,160. |
USPTO; Final Office Action dated Dec. 28, 2010 in U.S. Appl. No. 12/140,809. |
USPTO; Final Office Action dated Dec. 28, 2018 in U.S. Appl. No. 13/184,351. |
USPTO; Final Office Action dated Dec. 30, 2016 in U.S. Appl. No. 13/166,367. |
USPTO; Final Office Action dated Dec. 31, 2015 in U.S. Appl. No. 12/436,306. |
USPTO; Final Office Action dated Dec. 6, 2011 in U.S. Appl. No. 12/416,809. |
USPTO; Final Office Action dated Dec. 7, 2016 in U.S. Appl. No. 14/508,296. |
USPTO; Final Office Action dated Dec. 8, 2020 in U.S. Appl. No. 16/397,045. |
USPTO; Final Office Action dated Dec. 9, 2016 in U.S. Appl. No. 13/169,951. |
USPTO; Final Office Action dated Dec. 9, 2020 in U.S. Appl. No. 16/210,922. |
USPTO; Final Office Action dated Feb. 1, 2021 in U.S. Appl. No. 14/829,565. |
USPTO; Final Office Action dated Feb. 10, 2017 in U.S. Appl. No. 12/618,355. |
USPTO; Final Office Action dated Feb. 11, 2013 in U.S. Appl. No. 13/016,735. |
USPTO; Final Office Action dated Feb. 11, 2016 in U.S. Appl. No. 14/090,750. |
USPTO; Final Office Action dated Feb. 12, 2015 in U.S. Appl. No. 13/563,066. |
USPTO; Final Office Action dated Feb. 12, 2016 in U.S. Appl. No. 13/184,351. |
USPTO; Final Office Action dated Feb. 12, 2016 in U.S. Appl. No. 13/941,226. |
USPTO; Final Office Action dated Feb. 12, 2021 in U.S. Appl. No. 15/377,439. |
USPTO; Final Office Action dated Feb. 13, 2013 in U.S. Appl. No. 12/940,906. |
USPTO; Final Office Action dated Feb. 17, 2015 in U.S. Appl. No. 13/184,351. |
USPTO; Final Office Action dated Feb. 18, 2021 in U.S. Appl. No. 15/940,729. |
USPTO; Final Office Action dated Feb. 19, 2020 in U.S. Appl. No. 15/402,993. |
USPTO; Final Office Action dated Feb. 19, 2020 in U.S. Appl. No. 15/940,759. |
USPTO; Final Office Action dated Feb. 20, 2020 in U.S. Appl. No. 14/444,744. |
USPTO; Final Office Action dated Feb. 21, 2019 in U.S. Appl. No. 15/796,593. |
USPTO; Final Office Action dated Feb. 22, 2016 in U.S. Appl. No. 14/571,126. |
USPTO; Final Office Action dated Feb. 22, 2021 in U.S. Appl. No. 16/713,311. |
USPTO; Final Office Action dated Feb. 23, 2016 in U.S. Appl. No. 14/218,374. |
USPTO; Final Office Action dated Feb. 24, 2021 in U.S. Appl. No. 15/262,990. |
USPTO; Final Office Action dated Feb. 25, 2014 in U.S. Appl. No. 13/679,502. |
USPTO; Final Office Action dated Feb. 25, 2019 in U.S. Appl. No. 14/793,323. |
USPTO; Final Office Action dated Feb. 26, 2020 in U.S. Appl. No. 15/890,037. |
USPTO; Final Office Action dated Feb. 27, 2019 in U.S. Appl. No. 15/489,453. |
USPTO; Final Office Action dated Feb. 28, 2014 in U.S. Appl. No. 13/565,564. |
USPTO; Final Office Action dated Feb. 4, 2019 in U.S. Appl. No. 15/410,503. |
USPTO; Final Office Action dated Feb. 6, 2004 in U.S. Appl. No. 09/771,673. |
USPTO; Final Office Action dated Feb. 6, 2018 in U.S. Appl. No. 14/997,683. |
USPTO; Final Office Action dated Feb. 7, 2019 in U.S. Appl. No. 14/444,744. |
USPTO; Final Office Action dated Feb. 7, 2019 in U.S. Appl. No. 15/286,503. |
USPTO; Final Office Action dated Feb. 9, 2017 in U.S. Appl. No. 14/829,565. |
USPTO; Final Office Action dated Feb. 9, 2017 in U.S. Appl. No. 14/884,695. |
USPTO; Final Office Action dated Jan. 10, 2020 in U.S. Appl. No. 16/251,534. |
USPTO; Final Office Action dated Jan. 10, 2020 in U.S. Appl. No. 16/674,894. |
USPTO; Final Office Action dated Jan. 11, 2019 in U.S. Appl. No. 15/273,488. |
USPTO; Final Office Action dated Jan. 11, 2019 in U.S. Appl. No. 15/428,808. |
USPTO; Final Office Action dated Jan. 11, 2019 in U.S. Appl. No. 15/691,241. |
USPTO; Final Office Action dated Jan. 11, 2021 in U.S. Appl. No. 15/890,037. |
USPTO; Final Office Action dated Jan. 12, 2017 in U.S. Appl. No. 14/606,364. |
USPTO; Final Office Action dated Jan. 12, 2021 in U.S. Appl. No. 15/940,759. |
USPTO; Final Office Action dated Jan. 13, 2012 in U.S. Appl. No. 12/330,096. |
USPTO; Final Office Action dated Jan. 13, 2020 in U.S. Appl. No. 14/219,879. |
USPTO; Final Office Action dated Jan. 13, 2020 in U.S. Appl. No. 15/815,483. |
USPTO; Final Office Action dated Jan. 13, 2020 in U.S. Appl. No. 16/000,125. |
USPTO; Final Office Action dated Jan. 14, 2016 in U.S. Appl. No. 13/901,400. |
USPTO; Final Office Action dated Jan. 16, 2015 in U.S. Appl. No. 13/411,271. |
USPTO; Final Office Action dated Jan. 19, 2021 in U.S. Appl. No. 15/636,307. |
USPTO; Final Office Action dated Jan. 2, 2015 in U.S. Appl. No. 13/154,271. |
USPTO; Final Office Action dated Jan. 22, 2016 in U.S. Appl. No. 13/646,471. |
USPTO; Final Office Action dated Jan. 22, 2016 in U.S. Appl. No. 13/727,324. |
USPTO; Final Office Action dated Jan. 23, 2012 in U.S. Appl. No. 12/436,300. |
USPTO; Final Office Action dated Jan. 23, 2018 in U.S. Appl. No. 14/568,647. |
USPTO; Final Office Action dated Jan. 24, 2020 in U.S. Appl. No. 15/691,241. |
USPTO; Final Office Action dated Jan. 25, 2019 in U.S. Appl. No. 14/188,760. |
USPTO; Final Office Action dated Jan. 27, 2014 in U.S. Appl. No. 13/550,419. |
USPTO; Final Office Action dated Jan. 27, 2020 in U.S. Appl. No. 14/219,839. |
USPTO; Final Office Action dated Jan. 28, 2015 in U.S. Appl. No. 13/760,160. |
USPTO; Final Office Action dated Jan. 28, 2020 in U.S. Appl. No. 16/039,867. |
USPTO; Final Office Action dated Jan. 29, 2015 in U.S. Appl. No. 13/283,408. |
USPTO; Final Office Action dated Jan. 29, 2021 in U.S. Appl. No. 16/176,517. |
USPTO; Final Office Action dated Jan. 31, 2013 in U.S. Appl. No. 13/406,791. |
USPTO; Final Office Action dated Jan. 4, 2016 in U.S. Appl. No. 13/966,782. |
USPTO; Final Office Action dated Jan. 6, 2020 in U.S. Appl. No. 15/286,503. |
USPTO; Final Office Action dated Jan. 6, 2021 in U.S. Appl. No. 16/117,530. |
USPTO; Final Office Action dated Jan. 7, 2020 in U.S. Appl. No. 15/726,959. |
USPTO; Final Office Action dated Jan. 7, 2021 in U.S. Appl. No. 15/380,909. |
USPTO; Final Office Action dated Jan. 8, 2020 in U.S. Appl. No. 15/589,849. |
USPTO; Final Office Action dated Jul. 10, 2015 in U.S. Appl. No. 14/183,187. |
USPTO; Final Office Action dated Jul. 10, 2017 in U.S. Appl. No. 14/444,744. |
USPTO; Final Office Action dated Jul. 12, 2017 in U.S. Appl. No. 15/397,319. |
USPTO; Final Office Action dated Jul. 14, 2014 in U.S. Appl. No. 12/754,223. |
USPTO; Final Office Action dated Jul. 14, 2015 in U.S. Appl. No. 14/457,058. |
USPTO; Final Office Action dated Jul. 15, 2019 in U.S. Appl. No. 29/646,377. |
USPTO; Final Office Action dated Jul. 15, 2020 in U.S. Appl. No. 16/152,260. |
USPTO; Final Office Action dated Jul. 15, 2021 in U.S. Appl. No. 15/726,959. |
USPTO; Final Office Action dated Jul. 16, 2015 in U.S. Appl. No. 14/563,044. |
USPTO; Final Office Action dated Jul. 16, 2019 in U.S. Appl. No. 15/672,119. |
USPTO; Final Office Action dated Jul. 17, 2013 in U.S. Appl. No. 13/094,402. |
USPTO; Final Office Action dated Jul. 20, 2017 in U.S. Appl. No. 14/218,690. |
USPTO; Final Office Action dated Jul. 21, 2017 in U.S. Appl. No. 14/956,115. |
USPTO; Final Office Action dated Jul. 21, 2021 in U.S. Appl. No. 16/252,569. |
USPTO; Final Office Action dated Jul. 23, 2020 in U.S. Appl. No. 15/380,921. |
USPTO; Final Office Action dated Jul. 23, 2021 in U.S. Appl. No. 17/009,093. |
USPTO; Final Office Action dated Jul. 24, 2020 in U.S. Appl. No. 15/996,286. |
USPTO; Final Office Action dated Jul. 26, 2018 in U.S. Appl. No. 15/144,506. |
USPTO; Final Office Action dated Jul. 26, 2019 in U.S. Appl. No. 15/690,017. |
USPTO; Final Office Action dated Jul. 26, 2021 in U.S. Appl. No. 16/206,589. |
USPTO; Final Office Action dated Jul. 27, 2021 in U.S. Appl. No. 16/108,950. |
USPTO; Final Office Action dated Jul. 29, 2013 in U.S. Appl. No. 13/184,351. |
USPTO; Final Office Action dated Jul. 29, 2016 in U.S. Appl. No. 14/659,152. |
USPTO; Final Office Action dated Jul. 30, 2020 in U.S. Appl. No. 16/055,532. |
USPTO; Final Office Action dated Jul. 31, 2019 in U.S. Appl. No. 15/795,056. |
USPTO; Final Office Action dated Jul. 6, 2017 in U.S. Appl. No. 14/219,839. |
USPTO; Final Office action dated Jul. 6, 2017 in U.S. Appl. No. 14/219,879. |
USPTO; Final Office Action dated Jul. 6, 2018 in U.S. Appl. No. 15/135,258. |
USPTO; Final Office Action dated Jul. 8, 2014 in U.S. Appl. No. 13/439,528. |
USPTO; Final Office Action dated Jul. 8, 2016 in U.S. Appl. No. 14/050,150. |
USPTO; Final Office Action dated Jul. 8, 2020 in U.S. Appl. No. 15/589,861. |
USPTO; Final Office Action dated Jul. 8, 2021 in U.S. Appl. No. 16/151,074. |
USPTO; Final Office Action dated Jun. 1, 2015 in U.S. Appl. No. 13/597,108. |
USPTO; Final Office Action dated Jun. 1, 2020 in U.S. Appl. No. 15/135,258. |
USPTO; Final Office Action dated Jun. 10, 2016 in U.S. Appl. No. 14/987,420. |
USPTO; Final Office Action dated Jun. 11, 2020 in U.S. Appl. No. 15/861,418. |
USPTO; Final Office Action dated Jun. 14, 2016 in U.S. Appl. No. 14/606,364. |
USPTO; Final Office Action dated Jun. 14, 2018 in U.S. Appl. No. 14/457,058. |
USPTO; Final Office Action dated Jun. 14, 2019 in U.S. Appl. No. 15/917,262. |
USPTO; Final Office Action dated Jun. 14, 2021 in U.S. Appl. No. 16/202,941. |
USPTO; Final Office Action dated Jun. 15, 2016 in U.S. Appl. No. 14/050,150. |
USPTO; Final Office Action dated Jun. 15, 2017 in U.S. Appl. No. 13/184,351. |
USPTO; Final Office Action dated Jun. 15, 2020 in U.S. Appl. No. 15/896,986. |
USPTO; Final Office Action dated Jun. 15, 2020 in U.S. Appl. No. 16/242,829. |
USPTO; Final Office Action dated Jun. 16, 2020 in U.S. Appl. No. 15/636,307. |
USPTO; Final Office Action dated Jun. 18, 2014 in U.S. Appl. No. 13/535,214. |
USPTO; Final Office Action dated Jun. 19, 2015 in U.S. Appl. No. 14/065,114. |
USPTO; Final Office Action dated Jun. 19, 2020 in U.S. Appl. No. 16/219,555. |
USPTO; Final Office Action dated Jun. 2, 2016 in U.S. Appl. No. 13/597,108. |
USPTO; Final Office Action dated Jun. 2, 2021 in U.S. Appl. No. 15/611,707. |
USPTO; Final Office Action dated Jun. 20, 2005 in U.S. Appl. No. 10/222,229. |
USPTO; Final Office Action dated Jun. 21, 2002 in U.S. Appl. No. 09/807,580. |
USPTO; Final Office Action dated Jun. 21, 2021 in U.S. Appl. No. 15/380,921. |
USPTO; Final Office Action dated Jun. 22, 2012 in U.S. Appl. No. 12/618,419. |
USPTO; Final Office Action dated Jun. 23, 2014 in U.S. Appl. No. 12/436,306. |
USPTO; Final Office Action dated Jun. 23, 2020 in U.S. Appl. No. 16/105,745. |
USPTO; Final Office Action dated Jun. 25, 2019 in U.S. Appl. No. 14/457,058. |
USPTO; Final Office Action dated Jun. 25, 2019 in U.S. Appl. No. 15/377,439. |
USPTO; Final Office Action dated Jun. 25, 2019 in U.S. Appl. No. 15/598,169. |
USPTO; Final Office Action dated Jun. 26, 2019 in U.S. Appl. No. 15/589,861. |
USPTO; Final Office Action dated Jun. 26, 2020 in U.S. Appl. No. 16/105,802. |
USPTO; Final Office Action dated Jun. 28, 2013 in U.S. Appl. No. 12/754,223. |
USPTO; Final Office Action dated Jun. 28, 2018 in U.S. Appl. No. 15/380,921. |
USPTO; Final Office Action dated Jun. 28, 2021 in U.S. Appl. No. 15/925,532. |
USPTO; Final Office Action dated Jun. 30, 2020 in U.S. Appl. No. 16/356,394. |
USPTO; Final Office Action dated Jun. 5, 2020 in U.S. Appl. No. 16/132,142. |
USPTO; Final Office Action dated Jun. 7, 2017 in U.S. Appl. No. 15/203,632. |
USPTO; Final Office Action dated Jun. 8, 2017 in U.S. Appl. No. 14/808,979. |
USPTO; Final Office Action dated Jun. 9, 2017 in U.S. Appl. No. 14/465,252. |
USPTO; Final Office Action dated Jun. 9, 2021 in U.S. Appl. No. 15/491,726. |
USPTO; Final Office Action dated Mar. 1, 2016 in U.S. Appl. No. 13/665,366. |
USPTO; Final Office Action dated Mar. 1, 2016 in U.S. Appl. No. 13/941,216. |
USPTO; Final Office Action dated Mar. 10, 2021 in U.S. Appl. No. 15/690,017. |
USPTO; Final Office Action dated Mar. 11, 2020 in U.S. Appl. No. 15/802,154. |
USPTO; Final Office Action dated Mar. 12, 2020 in U.S. Appl. No. 15/923,834. |
USPTO; Final Office Action dated Mar. 13, 2013 in U.S. Appl. No. 12/854,818. |
USPTO; Final Office Action dated Mar. 13, 2015 in U.S. Appl. No. 13/597,043. |
USPTO; Final Office Action dated Mar. 14, 2018 in U.S. Appl. No. 14/808,979. |
USPTO; Final Office Action dated Mar. 14, 2019 in U.S. Appl. No. 15/135,258. |
USPTO; Final Office Action dated Mar. 15, 2019 in U.S. Appl. No. 13/651,144. |
USPTO; Final Office Action dated Mar. 17, 2016 in U.S. Appl. No. 14/659,437. |
USPTO; Final Office Action dated Mar. 17, 2020 in U.S. Appl. No. 16/161,744. |
USPTO; Final Office Action dated Mar. 18, 2021 in U.S. Appl. No. 16/105,802. |
USPTO; Final Office Action dated Mar. 19, 2020 in U.S. Appl. No. 15/798,201. |
USPTO; Final Office Action dated Mar. 2, 2020 in U.S. Appl. No. 16/158,077. |
USPTO; Final Office Action dated Mar. 20, 2015 in U.S. Appl. No. 13/312,591. |
USPTO; Final Office Action dated Mar. 22, 2004 in U.S. Appl. No. 10/222,229. |
USPTO; Final Office Action dated Mar. 23, 2021 in U.S. Appl. No. 16/039,817. |
USPTO; Final Office Action dated Mar. 23, 2021 in U.S. Appl. No. 16/105,745. |
USPTO; Final Office Action dated Mar. 24, 2021 in U.S. Appl. No. 16/105,761. |
USPTO; Final Office Action dated Mar. 25, 2014 in U.S. Appl. No. 13/102,980. |
USPTO; Final Office Action dated Mar. 25, 2015 in U.S. Appl. No. 13/791,246. |
USPTO; Final Office Action dated Mar. 25, 2016 in U.S. Appl. No. 14/219,839. |
USPTO; Final Office Action dated Mar. 25, 2021 in U.S. Appl. No. 15/286,503. |
USPTO; Final Office Action dated Mar. 26, 2014 in U.S. Appl. No. 12/854,818. |
USPTO; Final Office Action dated Mar. 27, 2020 in U.S. Appl. No. 15/672,096. |
USPTO; Final Office Action dated Mar. 28, 2017 in U.S. Appl. No. 14/919,536. |
USPTO; Final Office Action dated Mar. 28, 2018 in U.S. Appl. No. 14/444,744. |
USPTO; Final Office Action dated Mar. 28, 2019 in U.S. Appl. No. 15/182,504. |
USPTO; Final Office Action dated Mar. 29, 2018 in U.S. Appl. No. 14/793,323. |
USPTO; Final Office Action dated Mar. 29, 2021 in U.S. Appl. No. 16/219,555. |
USPTO; Final Office Action dated Mar. 3, 2016 in U.S. Appl. No. 13/169,951. |
USPTO; Final Office Action dated Mar. 3, 2020 in U.S. Appl. No. 14/829,565. |
USPTO; Final Office Action dated Mar. 5, 2018 in U.S. Appl. No. 14/829,565. |
USPTO; Final Office Action dated Mar. 6, 2019 in U.S. Appl. No. 15/589,849. |
USPTO; Final Office Action dated Mar. 6, 2019 in U.S. Appl. No. 15/636,307. |
USPTO; Final Office Action dated Mar. 7, 2019 in U.S. Appl. No. 15/815,483. |
USPTO; Final Office Action dated Mar. 8, 2021 in U.S. Appl. No. 16/042,791. |
USPTO; Final Office Action dated May 1, 2019 in U.S. Appl. No. 15/491,726. |
USPTO; Final Office Action dated May 11, 2018 in U.S. Appl. No. 14/919,536. |
USPTO; Final Office Action dated May 12, 2015 in U.S. Appl. No. 13/760,160. |
USPTO; Final Office Action dated May 12, 2021 in U.S. Appl. No. 16/546,543. |
USPTO; Final Office Action dated May 13, 2015 in U.S. Appl. No. 12/436,306. |
USPTO; Final Office Action dated May 13, 2019 in U.S. Appl. No. 15/262,990. |
USPTO; Final Office Action dated May 13, 2020 in U.S. Appl. No. 15/377,439. |
USPTO; Final Office Action dated May 14, 2014 in U.S. Appl. No. 13/312,591. |
USPTO; Final Office Action dated May 15, 2018 in U.S. Appl. No. 15/388,410. |
USPTO; Final Office Action dated May 15, 2020 in U.S. Appl. No. 14/457,058. |
USPTO; Final Office Action dated May 17, 2013 in U.S. Appl. No. 13/339,609. |
USPTO; Final Office Action dated May 17, 2018 in U.S. Appl. No. 15/222,780. |
USPTO; Final Office action dated May 19, 2016 in U.S. Appl. No. 14/219,879. |
USPTO; Final Office Action dated May 19, 2017 in U.S. Appl. No. 14/568,647. |
USPTO; Final Office Action dated May 2, 2019 in U.S. Appl. No. 15/890,037. |
USPTO; Final Office Action dated May 20, 2021 in U.S. Appl. No. 16/468,258. |
USPTO; Final Office Action dated May 21, 2019 in U.S. Appl. No. 15/402,993. |
USPTO; Final Office Action dated May 21, 2021 in U.S. Appl. No. 15/402,993. |
USPTO; Final Office Action dated May 24, 2018 in U.S. Appl. No. 14/218,690. |
USPTO; Final Office Action dated May 26, 2015 in U.S. Appl. No. 13/169,951. |
USPTO; Final Office Action dated May 26, 2016 in U.S. Appl. No. 14/508,296. |
USPTO; Final Office Action dated May 26, 2017 in U.S. Appl. No. 15/144,481. |
USPTO; Final Office Action dated May 27, 2003 in U.S. Appl. No. 09/807,580. |
USPTO; Final Office Action dated May 27, 2020 in U.S. Appl. No. 15/690,017. |
USPTO; Final Office Action dated May 27, 2021 in U.S. Appl. No. 16/172,535. |
USPTO; Final Office Action dated May 29, 2003 in U.S. Appl. No. 09/771,673. |
USPTO; Final Office Action dated May 3, 2013 in U.S. Appl. No. 13/238,960. |
USPTO; Final Office Action dated May 3, 2017 in U.S. Appl. No. 13/665,366. |
USPTO; Final Office Action dated May 4, 2011 in U.S. Appl. No. 12/553,759. |
USPTO; Final Office Action dated May 4, 2016 in U.S. Appl. No. 14/246,969. |
USPTO; Final Office Action dated May 5, 2017 in U.S. Appl. No. 15/222,749. |
USPTO; Final Office Action dated May 5, 2017 in U.S. Appl. No. 15/222,780. |
USPTO; Final Office Action dated May 6, 2021 in U.S. Appl. No. 16/152,260. |
USPTO; Final Office Action dated May 8, 2013 in U.S. Appl. No. 12/618,355. |
USPTO; Final Office Action dated Nov. 1, 2016 in U.S. Appl. No. 14/465,252. |
USPTO; Final Office Action dated Nov. 1, 2018 in U.S. Appl. No. 14/219,839. |
USPTO; Final Office Action dated Nov. 12, 2019 in U.S. Appl. No. 15/636,307. |
USPTO; Final Office Action dated Nov. 13, 2019 in U.S. Appl. No. 15/860,564. |
USPTO; Final Office Action dated Nov. 14, 2014 in U.S. Appl. No. 13/677,151. |
USPTO; Final Office Action dated Nov. 14, 2016 in U.S. Appl. No. 14/218,690. |
USPTO; Final Office Action dated Nov. 14, 2018 in U.S. Appl. No. 15/726,959. |
USPTO; Final Office Action dated Nov. 16, 2018 in U.S. Appl. No. 15/592,730. |
USPTO; Final Office Action dated Nov. 17, 2017 in U.S. Appl. No. 14/090,750. |
USPTO; Final Office Action dated Nov. 17, 2020 in U.S. Appl. No. 16/105,802. |
USPTO; Final Office Action dated Nov. 18, 2020 in U.S. Appl. No. 16/252,567. |
USPTO; Final Office Action dated Nov. 19, 2015 in U.S. Appl. No. 13/651,144. |
USPTO; Final Office Action dated Nov. 19, 2019 in U.S. Appl. No. 15/262,990. |
USPTO; Final Office Action dated Nov. 19, 2019 in U.S. Appl. No. 15/896,986. |
USPTO; Final Office Action dated Nov. 19, 2020 in U.S. Appl. No. 16/128,282. |
USPTO; Final Office Action dated Nov. 2, 2017 in U.S. Appl. No. 13/169,951. |
USPTO; Final Office Action dated Nov. 2, 2018 in U.S. Appl. No. 13/169,951. |
USPTO; Final Office Action dated Nov. 2, 2018 in U.S. Appl. No. 14/219,879. |
USPTO; Final Office Action dated Nov. 20, 2018 in U.S. Appl. No. 15/650,686. |
USPTO; Final Office Action dated Nov. 23, 2015 in U.S. Appl. No. 13/154,271. |
USPTO; Final Office Action dated Nov. 25, 2016 in U.S. Appl. No. 14/835,637. |
USPTO; Final Office Action dated Nov. 25, 2020 in U.S. Appl. No. 15/985,539. |
USPTO; Final Office Action dated Nov. 27, 2019 in U.S. Appl. No. 15/925,532. |
USPTO; Final Office Action dated Nov. 27, 2020 in U.S. Appl. No. 16/205,899. |
USPTO; Final Office Action dated Nov. 28, 2018 in U.S. Appl. No. 14/508,489. |
USPTO; Final Office Action dated Nov. 29, 2017 in U.S. Appl. No. 14/752,712. |
USPTO; Final Office Action dated Nov. 29, 2019 in U.S. Appl. No. 16/038,024. |
USPTO; Final Office Action dated Nov. 3, 2020 in U.S. Appl. No. 16/055,532. |
USPTO; Final Office Action dated Nov. 7, 2014 in U.S. Appl. No. 14/183,187. |
USPTO; Final Office Action dated Oct. 1, 2021 in U.S. Appl. No. 15/262,990. |
USPTO; Final Office Action dated Oct. 10, 2017 in U.S. Appl. No. 15/144,506. |
USPTO; Final Office Action dated Oct. 12, 2021 in U.S. Appl. No. 15/996,286. |
USPTO; Final Office Action dated Oct. 14, 2020 in U.S. Appl. No. 16/251,534. |
USPTO; Final Office Action dated Oct. 14, 2021 in U.S. Appl. No. 16/878,443. |
USPTO; Final Office Action dated Oct. 15, 2015 in U.S. Appl. No. 13/646,403. |
USPTO; Final Office Action dated Oct. 15, 2020 in U.S. Appl. No. 15/925,532. |
USPTO; Final Office Action dated Oct. 15, 2020 in U.S. Appl. No. 16/004,041. |
USPTO; Final Office Action dated Oct. 16, 2017 in U.S. Appl. No. 15/205,827. |
USPTO; Final Office Action dated Oct. 16, 2020 in U.S. Appl. No. 16/172,535. |
USPTO; Final Office Action dated Oct. 17, 2013 in U.S. Appl. No. 12/436,306. |
USPTO; Final Office Action dated Oct. 19, 2018 in U.S. Appl. No. 15/060,412. |
USPTO; Final Office Action dated Oct. 19, 2020 in U.S. Appl. No. 15/923,834. |
USPTO; Final Office Action dated Oct. 2, 2020 in U.S. Appl. No. 15/286,503. |
USPTO; Final Office Action dated Oct. 2, 2020 in U.S. Appl. No. 15/997,445. |
USPTO; Final Office Action dated Oct. 2, 2020 in U.S. Appl. No. 16/833,279. |
USPTO; Final Office Action dated Oct. 20, 2016 in U.S. Appl. No. 13/646,471. |
USPTO; Final Office Action dated Oct. 20, 2021 in U.S. Appl. No. 16/000,125. |
USPTO; Final Office Action dated Oct. 21, 2013 in U.S. Appl. No. 12/763,037. |
USPTO; Final Office Action dated Oct. 21, 2021 in U.S. Appl. No. 16/999,065. |
USPTO; Final Office Action dated Oct. 22, 2015 in U.S. Appl. No. 12/618,355. |
USPTO; Final Office Action dated Oct. 22, 2020 in U.S. Appl. No. 16/000,156. |
USPTO; Final Office Action dated Oct. 24, 2019 in U.S. Appl. No. 15/135,258. |
USPTO; Final Office Action dated Oct. 30, 2013 in U.S. Appl. No. 13/465,340. |
USPTO; Final Office Action dated Oct. 4, 2017 in U.S. Appl. No. 14/508,489. |
USPTO; Final Office Action dated Oct. 5, 2017 in U.S. Appl. No. 14/188,760. |
USPTO; Final Office Action dated Oct. 6, 2020 in U.S. Appl. No. 16/000,125. |
USPTO; Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 16/828,753. |
USPTO; Final Office Action dated Oct. 7, 2021 in U.S. Appl. No. 16/872,045. |
USPTO; Final Office Action dated Oct. 9, 2018 in U.S. Appl. No. 15/205,827. |
USPTO; Final Office Action dated Sep. 1, 2010 in U.S. Appl. No. 12/357,174. |
USPTO; Final Office Action dated Sep. 1, 2015 in U.S. Appl. No. 14/079,302. |
USPTO; Final Office Action dated Sep. 1, 2021 in U.S. Appl. No. 16/240,392. |
USPTO; Final Office Action dated Sep. 11, 2001 in U.S. Appl. No. 09/452,844. |
USPTO; Final Office Action dated Sep. 14, 2015 in U.S. Appl. No. 14/018,345. |
USPTO; Final Office Action dated Sep. 14, 2020 in U.S. Appl. No. 16/000,109. |
USPTO; Final Office Action dated Sep. 15, 2021 in U.S. Appl. No. 16/789,138. |
USPTO; Final Office Action dated Sep. 16, 2020 in U.S. Appl. No. 15/611,707. |
USPTO; Final Office Action dated Sep. 17, 2020 in U.S. Appl. No. 15/835,328. |
USPTO; Final Office Action dated Sep. 17, 2021 in U.S. Appl. No. 16/861,144. |
USPTO; Final Office Action dated Sep. 18, 2019 in U.S. Appl. No. 15/380,921. |
USPTO; Final Office Action dated Sep. 2, 2020 in U.S. Appl. No. 16/116,708. |
USPTO; Final Office Action dated Sep. 20, 2016 in U.S. Appl. No. 13/651,144. |
USPTO; Final Office Action dated Sep. 21, 2017 in U.S. Appl. No. 14/886,571. |
USPTO; Final Office Action dated Sep. 24, 2014 in U.S. Appl. No. 13/181,407. |
USPTO; Final Office Action dated Sep. 24, 2020 in U.S. Appl. No. 15/726,959. |
USPTO; Final Office Action dated Sep. 24, 2020 in U.S. Appl. No. 15/917,224. |
USPTO; Final Office Action dated Sep. 25, 2014 in U.S. Appl. No. 13/760,160. |
USPTO; Final Office Action dated Sep. 25, 2014 in U.S. Appl. No. 13/912,666. |
USPTO; Final Office Action dated Sep. 25, 2019 in U.S. Appl. No. 16/147,047. |
USPTO; Final Office Action dated Sep. 26, 2012 in U.S. Appl. No. 12/436,306. |
USPTO; Final Office Action dated Sep. 26, 2019 in U.S. Appl. No. 16/188,690. |
USPTO; Final Office Action dated Sep. 27, 2002 in U.S. Appl. No. 09/452,844. |
USPTO; Final Office Action dated Sep. 28, 2016 in U.S. Appl. No. 14/090,750. |
USPTO; Final Office Action dated Sep. 29, 2016 in U.S. Appl. No. 14/568,647. |
USPTO; Final Office Action dated Sep. 3, 2020 in U.S. Appl. No. 15/974,948. |
USPTO; Final Office Action dated Sep. 3, 2021 in U.S. Appl. No. 16/004,041. |
USPTO; Final Office Action dated Sep. 5, 2018 in U.S. Appl. No. 14/752,712. |
USPTO; Final Office Action dated Sep. 7, 2021 in U.S. Appl. No. 16/251,534. |
USPTO; Final Office Action dated Sep. 8, 2020 in U.S. Appl. No. 15/402,993. |
USPTO; Final Office Action dated Sep. 9, 2020 in U.S. Appl. No. 29/726,623. |
USPTO; Final Office Acton dated Jun. 17, 2016 in U.S. Appl. No. 14/457,058. |
USPTO; Final Office Acton dated May 4, 2017 in U.S. Appl. No. 14/457,058. |
USPTO; Final Office Acton dated Sep. 23, 2016 in U.S. Appl. No. 13/187,300. |
USPTO; Final Office Acton dated Sep. 30, 2016 in U.S. Appl. No. 14/808,979. |
USPTO; Foma; Office Action dated Sep. 30, 2011 in U.S. Appl. No. 12/193,924. |
USPTO; Non Final Office Action dated Apr. 21, 2017 in U.S. Appl. No. 15/222,715. |
USPTO; Non- Final Office Action dated Feb. 3, 2015 in U.S. Appl. No. 12/436,306. |
USPTO; Non-Final Action dated Dec. 3, 2015 in U.S. Appl. No. 14/050,150. |
USPTO; Non-Final Action dated May 19, 2005 in U.S. Appl. No. 09/807,580. |
USPTO; Non-Final Action dated Nov. 27, 2002 in U.S. Appl. No. 09/807,580. |
USPTO; Non-Final Office Action dated Apr. 1, 2010 in U.S. Appl. No. 12/357,174. |
USPTO; Non-Final Office Action dated Apr. 1, 2020 in U.S. Appl. No. 15/997,445. |
USPTO; Non-Final Office Action dated Apr. 10, 2015 in U.S. Appl. No. 14/505,290. |
USPTO; Non-Final Office Action dated Apr. 11, 2012 in U.S. Appl. No. 12/436,306. |
USPTO; Non-Final Office Action dated Apr. 11, 2013 in U.S. Appl. No. 13/450,368. |
USPTO; Non-Final Office Action dated Apr. 12, 2017 in U.S. Appl. No. 15/397,319. |
USPTO; Non-Final Office Action dated Apr. 13, 2017 in U.S. Appl. No. 15/144,506. |
USPTO; Non-Final Office Action dated Apr. 13, 2020 in U.S. Appl. No. 16/833,279. |
USPTO; Non-Final Office Action dated Apr. 13, 2021 in U.S. Appl. No. 16/108,950. |
USPTO; Non-Final Office Action dated Apr. 14, 2017 in U.S. Appl. No. 14/956,115. |
USPTO; Non-Final Office Action dated Apr. 14, 2021 in U.S. Appl. No. 17/009,093. |
USPTO; Non-Final Office Action dated Apr. 15, 2015 in U.S. Appl. No. 13/646,403. |
USPTO; Non-Final Office Action dated Apr. 15, 2021 in U.S. Appl. No. 16/789,138. |
USPTO; Non-Final Office Action dated Apr. 16, 2019 in U.S. Appl. No. 29/604,101. |
USPTO; Non-Final Office Action dated Apr. 16, 2020 in U.S. Appl. No. 15/286,503. |
USPTO; Non-Final Office Action dated Apr. 16, 2020 in U.S. Appl. No. 16/255,639. |
USPTO; Non-Final Office Action dated Apr. 17, 2019 in U.S. Appl. No. 15/886,225. |
USPTO; Non-Final Office Action dated Apr. 18, 2018 in U.S. Appl. No. 14/188,760. |
USPTO; Non-Final Office Action dated Apr. 19, 2007 in U.S. Appl. No. 10/932,633. |
USPTO; Non-Final Office Action dated Apr. 19, 2018 in U.S. Appl. No. 15/726,959. |
USPTO; Non-Final Office Action dated Apr. 19, 2019 in U.S. Appl. No. 15/985,298. |
USPTO; Non-Final Office Action dated Apr. 2, 2019 in U.S. Appl. No. 16/147,047. |
USPTO; Non-Final Office Action dated Apr. 2, 2019 in U.S. Appl. No. 16/188,690. |
USPTO; Non-Final Office Action dated Apr. 2, 2020 in U.S. Appl. No. 15/974,948. |
USPTO; Non-Final Office Action dated Apr. 20, 2021 in U.S. Appl. No. 16/397,045. |
USPTO; Non-Final Office Action dated Apr. 21, 2020 in U.S. Appl. No. 16/130,798. |
USPTO; Non-Final Office Action dated Apr. 21, 2021 in U.S. Appl. No. 15/636,307. |
USPTO; Non-Final Office Action dated Apr. 22, 2016 in U.S. Appl. No. 15/055,122. |
USPTO; Non-Final Office Action dated Apr. 22, 2020 in U.S. Appl. No. 16/000,156. |
USPTO; Non-Final Office Action dated Apr. 24, 2014 in U.S. Appl. No. 13/912,666. |
USPTO; Non-Final Office Action dated Apr. 24, 2019 in U.S. Appl. No. 15/896,986. |
USPTO; Non-Final Office Action dated Apr. 24, 2020 in U.S. Appl. No. 15/815,483. |
USPTO; Non-Final Office Action dated Apr. 24, 2020 in U.S. Appl. No. 16/251,534. |
USPTO; Non-Final Office Action dated Apr. 24, 2020 in U.S. Appl. No. 29/726,623. |
USPTO; Non-Final Office Action dated Apr. 25, 2013 in U.S. Appl. No. 13/406,791. |
USPTO; Non-Final Office Action dated Apr. 25, 2018 in U.S. Appl. No. 15/673,278. |
USPTO; Non-Final Office Action dated Apr. 25, 2019 in U.S. Appl. No. 15/410,503. |
USPTO; Non-Final Office Action dated Apr. 25, 2019 in U.S. Appl. No. 16/038,024. |
USPTO; Non-Final Office Action dated Apr. 26, 2013 in U.S. Appl. No. 13/250,721. |
USPTO; Non-Final Office Action dated Apr. 26, 2017 in U.S. Appl. No. 13/169,951. |
USPTO; Non-Final Office Action dated Apr. 27, 2016 in U.S. Appl. No. 14/079,302. |
USPTO; Non-Final Office Action dated Apr. 28, 2010 in U.S. Appl. No. 12/121,085. |
USPTO; Non-Final Office Action dated Apr. 28, 2015 in U.S. Appl. No. 14/040,196. |
USPTO; Non-Final Office Action dated Apr. 28, 2020 in U.S. Appl. No. 14/444,744. |
USPTO; Non-Final Office Action dated Apr. 29, 2016 in U.S. Appl. No. 14/835,637. |
USPTO; Non-Final Office Action dated Apr. 3, 2015 in U.S. Appl. No. 13/677,133. |
USPTO; Non-Final Office Action dated Apr. 3, 2020 in U.S. Appl. No. 15/726,959. |
USPTO; Non-Final Office Action dated Apr. 30, 2020 in U.S. Appl. No. 16/055,532. |
USPTO; Non-Final Office Action dated Apr. 4, 2012 in U.S. Appl. No. 13/030,438. |
USPTO; Non-Final Office Action dated Apr. 4, 2018 in U.S. Appl. No. 15/592,730. |
USPTO; Non-Final Office Action dated Apr. 4, 2019 in U.S. Appl. No. 14/508,489. |
USPTO; Non-Final Office Action dated Apr. 5, 2021 in U.S. Appl. No. 15/996,286. |
USPTO; Non-Final Office Action dated Apr. 5, 2021 in U.S. Appl. No. 16/704,835. |
USPTO; Non-Final Office Action dated Apr. 5, 2021 in U.S. Appl. No. 16/816,078. |
USPTO; Non-Final Office Action dated Apr. 6, 2017 in U.S. Appl. No. 14/218,690. |
USPTO; Non-Final Office Action dated Apr. 6, 2017 in U.S. Appl. No. 14/508,489. |
USPTO; Non-Final Office Action dated Apr. 6, 2018 in U.S. Appl. No. 13/169,951. |
USPTO; Non-Final Office Action dated Apr. 6, 2018 in U.S. Appl. No. 14/219,879. |
USPTO; Non-Final Office Action dated Apr. 6, 2018 in U.S. Appl. No. 14/656,588. |
USPTO; Non-Final Office Action dated Apr. 6, 2018 in U.S. Appl. No. 15/434,051. |
USPTO; Non-Final Office Action dated Apr. 6, 2018 in U.S. Appl. No. 15/472,750. |
USPTO; Non-Final Office Action dated Apr. 7, 2015 in U.S. Appl. No. 14/018,345. |
USPTO; Non-Final Office Action dated Apr. 7, 2016 in U.S. Appl. No. 13/187,300. |
USPTO; Non-Final Office Action dated Apr. 8, 2015 in U.S. Appl. No. 12/618,355. |
USPTO; Non-Final Office Action dated Apr. 9, 2002 in U.S. Appl. No. 09/452,844. |
USPTO; Non-Final Office Action dated Apr. 9, 2014 in U.S. Appl. No. 13/333,420. |
USPTO; Non-Final Office Action dated Aug. 10, 2015 in U.S. Appl. No. 13/184,351. |
USPTO; Non-Final Office Action dated Aug. 10, 2018 in U.S. Appl. No. 14/793,323. |
USPTO; Non-Final Office Action dated Aug. 11, 2016 in U.S. Appl. No. 13/791,246. |
USPTO; Non-Final Office Action dated Aug. 11, 2017 in U.S. Appl. No. 15/397,237. |
USPTO; Non-Final Office Action dated Aug. 12, 2016 in U.S. Appl. No. 14/246,969. |
USPTO; Non-Final Office Action dated Aug. 12, 2016 in U.S. Appl. No. 14/981,434. |
USPTO; Non-Final Office Action dated Aug. 16, 2019 in U.S. Appl. No. 16/167,225. |
USPTO; Non-Final Office Action dated Aug. 17, 2021 in U.S. Appl. No. 16/797,346. |
USPTO; Non-Final Office Action dated Aug. 19, 2015 in U.S. Appl. No. 13/646,471. |
USPTO; Non-Final Office Action dated Aug. 19, 2015 in U.S. Appl. No. 14/268,348. |
USPTO; Non-Final Office Action dated Aug. 19, 2019 in U.S. Appl. No. 13/184,351. |
USPTO; Non-Final Office Action dated Aug. 19, 2019 in U.S. Appl. No. 16/208,062. |
USPTO; Non-Final Office Action dated Aug. 19, 2020 in U.S. Appl. No. 16/400,814. |
USPTO; Non-Final Office Action dated Aug. 19, 2021 in U.S. Appl. No. 16/992,806. |
USPTO; Non-Final Office Action dated Aug. 2, 2021 in U.S. Appl. No. 15/962,980. |
USPTO; Non-Final Office Action dated Aug. 20, 2013 in U.S. Appl. No. 13/679,502. |
USPTO; Non-Final Office Action dated Aug. 20, 2019 in U.S. Appl. No. 15/815,483. |
USPTO; Non-Final Office Action dated Aug. 21, 2019 in U.S. Appl. No. 29/634,768. |
USPTO; Non-Final Office Action dated Aug. 23, 2021 in U.S. Appl. No. 16/938,868. |
USPTO; Non-Final Office Action dated Aug. 24, 2020 in U.S. Appl. No. 15/690,017. |
USPTO; Non-Final Office Action dated Aug. 25, 2005 in U.S. Appl. No. 10/191,635. |
USPTO; Non-Final Office Action dated Aug. 25, 2021 in U.S. Appl. No. 16/210,922. |
USPTO; Non-Final Office Action dated Aug. 27, 2018 in U.S. Appl. No. 15/067,028. |
USPTO; Non-Final Office Action dated Aug. 27, 2018 in U.S. Appl. No. 15/662,107. |
USPTO; Non-Final Office Action dated Aug. 28, 2013 in U.S. Appl. No. 12/953,870. |
USPTO; Non-Final Office Action dated Aug. 28, 2017 in U.S. Appl. No. 15/254,724. |
USPTO; Non-Final Office Action dated Aug. 29, 2017 in U.S. Appl. No. 14/919,536. |
USPTO; Non-Final Office Action dated Aug. 29, 2019 in U.S. Appl. No. 16/161,744. |
USPTO; Non-Final Office Action dated Aug. 3, 2011 in U.S. Appl. No. 12/436,300. |
USPTO; Non-Final Office Action dated Aug. 3, 2011 in U.S. Appl. No. 12/436,315. |
USPTO; Non-Final Office Action dated Aug. 3, 2017 in U.S. Appl. No. 14/752,712. |
USPTO; Non-Final Office Action dated Aug. 3, 2018 in U.S. Appl. No. 15/273,488. |
USPTO; Non-Final Office Action dated Aug. 3, 2020 in U.S. Appl. No. 14/829,565. |
USPTO; Non-Final Office Action dated Aug. 3, 2020 in U.S. Appl. No. 15/940,759. |
USPTO; Non-Final Office Action dated Aug. 3, 2021 in U.S. Appl. No. 16/849,793. |
USPTO; Non-Final Office Action dated Aug. 30, 2013 in U.S. Appl. No. 13/570,067. |
USPTO; Non-Final Office Action dated Aug. 31, 2021 in U.S. Appl. No. 16/712,707. |
USPTO; Non-Final Office Action dated Aug. 4, 2017 in U.S. Appl. No. 15/050,159. |
USPTO; Non-Final Office Action dated Aug. 4, 2020 in U.S. Appl. No. 16/042,791. |
USPTO; Non-Final Office Action dated Aug. 4, 2020 in U.S. Appl. No. 16/926,192. |
USPTO; Non-Final Office Action dated Aug. 5, 2019 in U.S. Appl. No. 15/262,990. |
USPTO; Non-Final Office Action dated Aug. 5, 2020 in U.S. Appl. No. 16/397,045. |
USPTO; Non-Final Office Action dated Aug. 6, 2019 in U.S. Appl. No. 16/158,077. |
USPTO; Non-Final Office Action dated Aug. 7, 2018 in U.S. Appl. No. 15/428,808. |
USPTO; Non-Final Office Action dated Aug. 7, 2019 in U.S. Appl. No. 16/024,390. |
USPTO; Non-Final Office Action dated Aug. 7, 2020 in U.S. Appl. No. 16/172,535. |
USPTO; Non-Final Office Action dated Aug. 8, 2014 in U.S. Appl. No. 13/563,066. |
USPTO; Non-Final Office Action dated Aug. 8, 2017 in U.S. Appl. No. 13/941,226. |
USPTO; Non-Final Office Action dated Aug. 8, 2019 in U.S. Appl. No. 14/188,760. |
USPTO; Non-Final Office Action dated Aug. 8, 2019 in U.S. Appl. No. 14/444,744. |
USPTO; Non-Final Office Action dated Aug. 9, 2018 in U.S. Appl. No. 15/660,805. |
USPTO; Non-Final Office Action dated Aug. 9, 2018 in U.S. Appl. No. 15/691,241. |
USPTO; Non-Final Office Action dated Aug. 9, 2018 in U.S. Appl. No. 15/798,201. |
USPTO; Non-Final Office Action dated Dec. 1, 2016 in U.S. Appl. No. 14/919,536. |
USPTO; Non-Final Office Action dated Dec. 1, 2020 in U.S. Appl. No. 14/219,879. |
USPTO; Non-Final Office Action dated Dec. 10, 2002 in U.S. Appl. No. 09/771,673. |
USPTO; Non-Final Office Action dated Dec. 11, 2019 in U.S. Appl. No. 16/018,692. |
USPTO; Non-Final Office Action dated Dec. 11, 2021 in U.S. Appl. No. 16/202,941. |
USPTO; Non-Final Office Action dated Dec. 14, 2016 in U.S. Appl. No. 14/997,683. |
USPTO; Non-Final Office Action dated Dec. 14, 2017 in U.S. Appl. No. 13/651,144. |
USPTO; Non-Final Office Action dated Dec. 14, 2018 in U.S. Appl. No. 15/340,512. |
USPTO; Non-Final Office Action dated Dec. 15, 2010 in U.S. Appl. No. 12/553,759. |
USPTO; Non-Final Office Action dated Dec. 15, 2014 in U.S. Appl. No. 14/065,114. |
USPTO; Non-Final Office Action dated Dec. 15, 2016 in U.S. Appl. No. 13/184,351. |
USPTO; Non-Final Office Action dated Dec. 15, 2016 in U.S. Appl. No. 14/938,180. |
USPTO; Non-Final Office Action dated Dec. 15, 2017 in U.S. Appl. No. 15/466,149. |
USPTO; Non-Final Office Action dated Dec. 16, 2014 in U.S. Appl. No. 13/646,471. |
USPTO; Non-Final Office Action dated Dec. 16, 2014 in U.S. Appl. No. 13/915,732. |
USPTO; Non-Final Office Action dated Dec. 17, 2015 in U.S. Appl. No. 14/508,296. |
USPTO; Non-Final Office Action dated Dec. 18, 2018 in U.S. Appl. No. 15/690,017. |
USPTO; Non-Final Office Action dated Dec. 18, 2019 in U.S. Appl. No. 16/280,964. |
USPTO; Non-Final Office Action dated Dec. 19, 2013 in U.S. Appl. No. 13/784,388. |
USPTO; Non-Final Office Action dated Dec. 20, 2013 in U.S. Appl. No. 13/535,214. |
USPTO; Non-Final Office Action dated Dec. 20, 2016 in U.S. Appl. No. 14/808,979. |
USPTO; Non-Final Office Action dated Dec. 21, 2018 in U.S. Appl. No. 15/589,861. |
USPTO; Non-Final Office Action dated Dec. 21, 2018 in U.S. Appl. No. 15/798,150. |
USPTO; Non-Final Office Action dated Dec. 22, 2004 in U.S. Appl. No. 10/222,229. |
USPTO; Non-Final Office Action dated Dec. 22, 2016 in U.S. Appl. No. 14/219,839. |
USPTO; Non-Final Office Action dated Dec. 23, 2015 in U.S. Appl. No. 14/079,302. |
USPTO; Non-Final Office Action dated Dec. 23, 2016 in U.S. Appl. No. 14/219,879. |
USPTO; Non-Final Office Action dated Dec. 23, 2019 in U.S. Appl. No. 15/923,834. |
USPTO; Non-Final Office Action dated Dec. 24, 2020 in U.S. Appl. No. 15/286,503. |
USPTO; Non-Final Office Action dated Dec. 26, 2017 in U.S. Appl. No. 15/798,120. |
USPTO; Non-Final Office Action dated Dec. 26, 2019 in U.S. Appl. No. 16/417,938. |
USPTO; Non-Final Office Action dated Dec. 28, 2018 in U.S. Appl. No. 14/752,712. |
USPTO; Non-Final Office Action dated Dec. 28, 2020 in U.S. Appl. No. 16/517,122. |
USPTO; Non-Final Office Action dated Dec. 29, 2010 in U.S. Appl. No. 12/362,023. |
USPTO; Non-Final Office Action dated Dec. 3, 2012 in U.S. Appl. No. 13/040,013. |
USPTO; Non-Final Office Action dated Dec. 31, 2019 in U.S. Appl. No. 16/427,288. |
USPTO; Non-Final Office Action dated Dec. 31, 2019 in U.S. Appl. No. 16/455,406. |
USPTO; Non-Final Office Action dated Dec. 31, 2020 in U.S. Appl. No. 16/924,595. |
USPTO; Non-Final Office Action dated Dec. 4, 2013 in U.S. Appl. No. 13/406,791. |
USPTO; Non-Final Office Action dated Dec. 4, 2018 in U.S. Appl. No. 15/672,063. |
USPTO; Non-Final Office Action dated Dec. 6, 2011 in U.S. Appl. No. 12/718,731. |
USPTO; Non-Final Office Action dated Dec. 6, 2017 in U.S. Appl. No. 15/476,035. |
USPTO; Non-Final Office Action dated Dec. 6, 2018 in U.S. Appl. No. 15/705,955. |
USPTO; Non-Final Office Action dated Dec. 7, 2012 in U.S. Appl. No. 12/953,870. |
USPTO; Non-Final Office Action dated Dec. 8, 2015 in U.S. Appl. No. 13/597,108. |
USPTO; Non-Final Office Action dated Feb. 1, 2019 in U.S. Appl. No. 15/627,189. |
USPTO; Non-Final Office Action dated Feb. 1, 2021 in U.S. Appl. No. 16/563,473. |
USPTO; Non-Final Office Action dated Feb. 11, 2019 in U.S. Appl. No. 15/707,786. |
USPTO; Non-Final Office Action dated Feb. 11, 2021 in U.S. Appl. No. 16/565,460. |
USPTO; Non-Final Office Action dated Feb. 12, 2015 in U.S. Appl. No. 13/597,108. |
USPTO; Non-Final Office Action dated Feb. 12, 2015 in U.S. Appl. No. 14/457,058. |
USPTO; Non-Final Office Action dated Feb. 13, 2014 in U.S. Appl. No. 13/411,271. |
USPTO; Non-Final Office Action dated Feb. 13, 2020 in U.S. Appl. No. 15/135,258. |
USPTO; Non-Final Office Action dated Feb. 15, 2012 in U.S. Appl. No. 13/085,531. |
USPTO; Non-Final Office Action dated Feb. 16, 2012 in U.S. Appl. No. 12/618,419. |
USPTO; Non-Final Office Action dated Feb. 18, 2021 in U.S. Appl. No. 15/923,834. |
USPTO; Non-Final Office Action dated Feb. 19, 2020 in U.S. Appl. No. 16/242,829. |
USPTO; Non-Final Office Action dated Feb. 19, 2021 in U.S. Appl. No. 15/974,948. |
USPTO; Non-Final Office Action dated Feb. 19, 2021 in U.S. Appl. No. 16/172,535. |
USPTO; Non-Final Office Action dated Feb. 2, 2017 in U.S. Appl. No. 14/568,647. |
USPTO; Non-Final Office Action dated Feb. 20, 2015 in U.S. Appl. No. 14/018,231. |
USPTO; Non-Final Office Action dated Feb. 20, 2018 in U.S. Appl. No. 15/060,412. |
USPTO; Non-Final Office Action dated Feb. 20, 2019 in U.S. Appl. No. 29/646,377. |
USPTO; Non-Final Office Action dated Feb. 20, 2020 in U.S. Appl. No. 15/835,352. |
USPTO; Non-Final Office Action dated Feb. 20, 2020 in U.S. Appl. No. 15/996,286. |
USPTO; Non-Final Office Action dated Feb. 20, 2020 in U.S. Appl. No. 16/105,745. |
USPTO; Non-Final Office Action dated Feb. 21, 2019 in U.S. Appl. No. 15/987,755. |
USPTO; Non-Final Office Action dated Feb. 23, 2018 in U.S. Appl. No. 14/817,953. |
USPTO; Non-Final Office Action dated Feb. 23, 2021 in U.S. Appl. No. 16/251,534. |
USPTO; Non-Final Office Action dated Feb. 23, 2021 in U.S. Appl. No. 16/827,506. |
USPTO; Non-Final Office Action dated Feb. 24, 2020 in U.S. Appl. No. 16/105,761. |
USPTO; Non-Final Office Action dated Feb. 24, 2021 in U.S. Appl. No. 16/637,134. |
USPTO; Non-Final Office Action dated Feb. 25, 2019 in U.S. Appl. No. 15/380,921. |
USPTO; Non-Final Office Action dated Feb. 28, 2020 in U.S. Appl. No. 16/137,974. |
USPTO; Non-Final Office Action dated Feb. 3, 2015 in U.S. Appl. No. 13/941,226. |
USPTO; Non-Final Office Action dated Feb. 3, 2017 in U.S. Appl. No. 15/222,738. |
USPTO; Non-Final Office Action dated Feb. 3, 2021 in U.S. Appl. No. 15/611,707. |
USPTO; Non-Final Office Action dated Feb. 4, 2014 in U.S. Appl. No. 12/436,306. |
USPTO; Non-Final Office Action dated Feb. 4, 2021 in U.S. Appl. No. 16/000,109. |
USPTO; Non-Final Office Action dated Feb. 5, 2019 in U.S. Appl. No. 15/402,993. |
USPTO; Non-Final Office Action dated Feb. 6, 2020 in U.S. Appl. No. 16/117,530. |
USPTO; Non-Final Office Action dated Feb. 8, 2019 in U.S. Appl. No. 15/672,119. |
USPTO; Non-Final Office Action dated Feb. 8, 2019 in U.S. Appl. No. 15/917,262. |
USPTO; Non-Final Office Action dated Feb. 8, 2021 in U.S. Appl. No. 16/685,787. |
USPTO; Non-Final Office Action dated Feb. 9, 2004 in U.S. Appl. No. 10/603,515. |
USPTO; Non-Final Office Action dated Feb. 9, 2021 in U.S. Appl. No. 15/402,993. |
USPTO; Non-Final Office Action dated Jan. 11, 2016 in U.S. Appl. No. 14/188,760. |
USPTO; Non-Final Office Action dated Jan. 11, 2018 in U.S. Appl. No. 14/218,690. |
USPTO; Non-Final Office Action dated Jan. 11, 2019 in U.S. Appl. No. 14/457,058. |
USPTO; Non-Final Office Action dated Jan. 11, 2019 in U.S. Appl. No. 15/879,209. |
USPTO; Non-Final Office Action dated Jan. 12, 2017 in U.S. Appl. No. 14/981,468. |
USPTO; Non-Final Office Action dated Jan. 12, 2021 in U.S. Appl. No. 16/453,249. |
USPTO; Non-Final Office Action dated Jan. 13, 2017 in U.S. Appl. No. 14/444,744. |
USPTO; Non-Final Office Action dated Jan. 13, 2020 in U.S. Appl. No. 15/589,861. |
USPTO; Non-Final Office Action dated Jan. 14, 2013 in U.S. Appl. No. 13/410,970. |
USPTO; Non-Final Office Action dated Jan. 14, 2014 in U.S. Appl. No. 13/941,226. |
USPTO; Non-Final Office Action dated Jan. 15, 2016 in U.S. Appl. No. 14/606,364. |
USPTO; Non-Final Office Action dated Jan. 15, 2020 in U.S. Appl. No. 15/380,921. |
USPTO; Non-Final Office Action dated Jan. 16, 2015 in U.S. Appl. No. 14/563,044. |
USPTO; Non-Final Office Action dated Jan. 16, 2018 in U.S. Appl. No. 15/499,647. |
USPTO; Non-Final Office Action dated Jan. 16, 2020 in U.S. Appl. No. 15/985,261. |
USPTO; Non-Final Office Action dated Jan. 16, 2020 in U.S. Appl. No. 16/014,981. |
USPTO; Non-Final Office Action dated Jan. 17, 2017 in U.S. Appl. No. 15/222,749. |
USPTO; Non-Final Office Action dated Jan. 18, 2018 in U.S. Appl. No. 15/683,701. |
USPTO; Non-Final Office Action dated Jan. 2, 2015 in U.S. Appl. No. 13/181,407. |
USPTO; Non-Final Office Action dated Jan. 2, 2015 in U.S. Appl. No. 13/901,372. |
USPTO; Non-Final Office Action dated Jan. 2, 2015 in U.S. Appl. No. 14/040,196. |
USPTO; Non-Final Office Action dated Jan. 20, 2017 in U.S. Appl. No. 15/210,256. |
USPTO; Non-Final Office Action dated Jan. 22, 2019 in U.S. Appl. No. 15/879,209. |
USPTO; Non-Final Office Action dated Jan. 23, 2013 in U.S. Appl. No. 13/184,351. |
USPTO; Non-Final Office Action dated Jan. 24, 2011 in U.S. Appl. No. 12/778,808. |
USPTO; Non-Final Office Action dated Jan. 24, 2019 in U.S. Appl. No. 16/018,692. |
USPTO; Non-Final Office Action dated Jan. 25, 2019 in U.S. Appl. No. 15/434,051. |
USPTO; Non-Final Office Action dated Jan. 25, 2021 in U.S. Appl. No. 15/925,532. |
USPTO; Non-Final Office Action dated Jan. 26, 2005 in U.S. Appl. No. 10/838,510. |
USPTO; Non-Final Office Action dated Jan. 26, 2015 in U.S. Appl. No. 13/912,666. |
USPTO; Non-Final Office Action dated Jan. 28, 2014 in U.S. Appl. No. 13/312,591. |
USPTO; Non-Final Office Action dated Jan. 3, 2002 in U.S. Appl. No. 09/807,580. |
USPTO; Non-Final Office Action dated Jan. 3, 2017 in U.S. Appl. No. 15/222,780. |
USPTO; Non-Final Office Action dated Jan. 30, 2017 in U.S. Appl. No. 13/187,300. |
USPTO; Non-Final Office Action dated Jan. 30, 2019 in U.S. Appl. No. 15/262,990. |
USPTO; Non-Final Office Action dated Jan. 30, 2020 in U.S. Appl. No. 16/245,006. |
USPTO; Non-Final Office Action dated Jan. 31, 2020 in U.S. Appl. No. 15/962,980. |
USPTO; Non-Final Office Action dated Jan. 4, 2018 in Application No. 15/3 80,921. |
USPTO; Non-Final Office Action dated Jan. 6, 2016 in U.S. Appl. No. 14/268,348. |
USPTO; Non-Final Office Action dated Jan. 6, 2020 in U.S. Appl. No. 16/132,142. |
USPTO; Non-Final Office Action dated Jan. 6, 2021 in U.S. Appl. No. 15/726,959. |
USPTO; Non-Final Office Action dated Jan. 8, 2020 in U.S. Appl. No. 16/219,555. |
USPTO; Non-Final Office Action dated Jan. 8, 2021 in U.S. Appl. No. 16/752,514. |
USPTO; Non-Final Office Action dated Jan. 9, 2018 in U.S. Appl. No. 15/135,224. |
USPTO; Non-Final Office Action dated Jan. 9, 2018 in U.S. Appl. No. 15/135,258. |
USPTO; Non-Final Office Action dated Jan. 9, 2018 in U.S. Appl. No. 15/135,333. |
USPTO; Non-Final Office Action dated Jan. 9, 2020 in U.S. Appl. No. 16/317,774. |
USPTO; Non-Final Office Action dated Jul. 1, 2020 in U.S. Appl. No. 15/380,909. |
USPTO; Non-Final Office Action dated Jul. 10, 2014 in U.S. Appl. No. 13/612,538. |
USPTO; Non-Final Office Action dated Jul. 10, 2020 in U.S. Appl. No. 15/798,201. |
USPTO; Non-Final Office Action dated Jul. 11, 2012 in U.S. Appl. No. 12/875,889. |
USPTO; Non-Final Office Action dated Jul. 14, 2021 in U.S. Appl. No. 29/695,044. |
USPTO; Non-Final Office Action dated Jul. 15, 2016 in U.S. Appl. No. 14/218,690. |
USPTO; Non-Final Office Action dated Jul. 15, 2019 in U.S. Appl. No. 14/219,839. |
USPTO; Non-Final Office Action dated Jul. 15, 2020 in U.S. Appl. No. 16/210,922. |
USPTO; Non-Final Office Action dated Jul. 16, 2014 in U.S. Appl. No. 13/184,351. |
USPTO; Non-Final Office Action dated Jul. 16, 2019 in U.S. Appl. No. 15/636,307. |
USPTO; Non-Final Office Action dated Jul. 16, 2019 in U.S. Appl. No. 16/014,981. |
USPTO; Non-Final Office Action dated Jul. 17, 2014 in U.S. Appl. No. 13/154,271. |
USPTO; Non-Final Office Action dated Jul. 19, 2019 in U.S. Appl. No. 15/135,258. |
USPTO; Non-Final Office Action dated Jul. 2, 2014 in U.S. Appl. No. 13/283,408. |
USPTO; Non-Final Office Action dated Jul. 2, 2014 in U.S. Appl. No. 13/565,564. |
USPTO; Non-Final Office Action dated Jul. 2, 2018 in U.S. Appl. No. 15/815,483. |
USPTO; Non-Final Office Action dated Jul. 2, 2020 in U.S. Appl. No. 15/802,154. |
USPTO; Non-Final Office Action dated Jul. 21, 2015 in U.S. Appl. No. 13/727,324. |
USPTO; Non-Final Office Action dated Jul. 22, 2019 in U.S. Appl. No. 15/940,759. |
USPTO; Non-Final Office Action dated Jul. 23, 2018 in U.S. Appl. No. 15/863,340. |
USPTO; Non-Final Office Action dated Jul. 23, 2020 in U.S. Appl. No. 16/167,164. |
USPTO; Non-Final Office Action dated Jul. 25, 2019 in U.S. Appl. No. 16/039,867. |
USPTO; Non-Final Office Action dated Jul. 26, 2011 in U.S. Appl. No. 12/416,809. |
USPTO; Non-Final Office Action dated Jul. 26, 2018 in Application No. 13/184,3 51. |
USPTO; Non-Final Office Action Dated Jul. 27, 2018 in U.S. Appl. No. 14/444,744. |
USPTO; Non-Final Office Action dated Jul. 27, 2018 in U.S. Appl. No. 15/673,110. |
USPTO; Non-Final Office Action dated Jul. 27, 2021 in U.S. Appl. No. 16/930,193. |
USPTO; Non-Final Office Action dated Jul. 28, 2011 in U.S. Appl. No. 12/330,096. |
USPTO; Non-Final Office Action dated Jul. 28, 2021 in U.S. Appl. No. 16/835,283. |
USPTO; Non-Final Office Action dated Jul. 28, 2021 in U.S. Appl. No. 16/888,423. |
USPTO; Non-Final Office Action dated Jul. 29, 2016 in U.S. Appl. No. 14/884,695. |
USPTO; Non-Final Office Action dated Jul. 29, 2019 in U.S. Appl. No. 15/660,797. |
USPTO; Non-Final Office Action dated Jul. 29, 2019 in U.S. Appl. No. 16/000,125. |
USPTO; Non-Final Office Action dated Jul. 30, 2014 in U.S. Appl. No. 13/284,642. |
USPTO; Non-Final Office Action dated Jul. 30, 2015 in U.S. Appl. No. 13/941,216. |
USPTO; Non-Final Office Action dated Jul. 30, 2020 in U.S. Appl. No. 16/151,074. |
USPTO; Non-Final Office Action dated Jul. 31, 2014 in U.S. Appl. No. 13/411,271. |
USPTO; Non-Final Office Action dated Jul. 31, 2019 in U.S. Appl. No. 15/860,564. |
USPTO; Non-Final Office Action dated Jul. 6, 2020 in U.S. Appl. No. 15/923,834. |
USPTO; Non-Final Office Action dated Jul. 7, 2021 in U.S. Appl. No. 16/999,065. |
USPTO; Non-Final Office Action dated Jul. 8, 2014 in U.S. Appl. No. 13/941,226. |
USPTO; Non-Final Office Action dated Jul. 8, 2015 in U.S. Appl. No. 13/901,400. |
USPTO; Non-Final Office Action dated Jul. 8, 2019 in U.S. Appl. No. 15/726,959. |
USPTO; Non-Final Office Action dated Jul. 9, 2020 in U.S. Appl. No. 16/897,158. |
USPTO; Non-Final Office Action dated Jul. 9, 2021 in U.S. Appl. No. 15/286,503. |
USPTO; Non-Final Office Action dated Jul. 9, 2021 in U.S. Appl. No. 15/997,445. |
USPTO; Non-Final Office Action dated Jun. 1, 2017 in U.S. Appl. No. 15/205,827. |
USPTO; Non-Final Office Action dated Jun. 10, 2021 in U.S. Appl. No. 15/262,990. |
USPTO; Non-Final Office Action dated Jun. 11, 2020 in U.S. Appl. No. 16/598,768. |
USPTO; Non-Final Office Action dated Jun. 11, 2021 in U.S. Appl. No. 16/671,847. |
USPTO; Non-Final Office Action dated Jun. 12, 2013 in U.S. Appl. No. 12/618,419. |
USPTO; Non-Final Office Action dated Jun. 12, 2020 in U.S. Appl. No. 15/985,539. |
USPTO; Non-Final Office Action dated Jun. 14, 2016 in U.S. Appl. No. 14/090,750. |
USPTO; Non-Final Office Action dated Jun. 14, 2018 in U.S. Appl. No. 15/711,989. |
USPTO; Non-Final Office Action dated Jun. 14, 2019 in U.S. Appl. No. 15/796,593. |
USPTO; Non-Final Office Action dated Jun. 15, 2016 in U.S. Appl. No. 13/941,216. |
USPTO; Non-Final Office Action dated Jun. 15, 2021 in U.S. Appl. No. 16/861,144. |
USPTO; Non-Final Office Action dated Jun. 16, 2017 in U.S. Appl. No. 14/798,136. |
USPTO; Non-Final Office Action dated Jun. 16, 2021 in U.S. Appl. No. 15/940,729. |
USPTO; Non-Final Office Action dated Jun. 17, 2015 in U.S. Appl. No. 13/283,408. |
USPTO; Non-Final Office Action dated Jun. 17, 2016 in U.S. Appl. No. 13/665,366. |
USPTO; Non-Final Office Action dated Jun. 17, 2021 in U.S. Appl. No. 15/690,017. |
USPTO; Non-Final Office Action dated Jun. 18, 2014 in U.S. Appl. No. 13/749,878. |
USPTO; Non-Final Office Action dated Jun. 18, 2015 in U.S. Appl. No. 13/665,366. |
USPTO; Non-Final Office Action dated Jun. 18, 2021 in U.S. Appl. No. 16/117,530. |
USPTO; Non-Final Office Action dated Jun. 2, 2016 in U.S. Appl. No. 13/646,471. |
USPTO; Non-Final Office Action dated Jun. 20, 2018 in U.S. Appl. No. 14/997,683. |
USPTO; Non-Final Office Action dated Jun. 21, 2018 in U.S. Appl. No. 15/499,647. |
USPTO; Non-Final Office Action dated Jun. 22, 2020 in U.S. Appl. No. 16/128,282. |
USPTO; Non-Final Office Action dated Jun. 23, 2017 in U.S. Appl. No. 14/090,750. |
USPTO; Non-Final Office Action dated Jun. 23, 2021 in U.S. Appl. No. 16/827,012. |
USPTO; Non-Final Office Action dated Jun. 24, 2014 in U.S. Appl. No. 13/181,407. |
USPTO; Non-Final Office Action dated Jun. 24, 2019 in U.S. Appl. No. 14/219,879. |
USPTO; Non-Final Office Action dated Jun. 24, 2021 in U.S. Appl. No. 16/673,860. |
USPTO; Non-Final Office Action dated Jun. 24, 2021 in U.S. Appl. No. 16/792,058. |
USPTO; Non-Final Office Action dated Jun. 25, 2019 in U.S. Appl. No. 15/719,208. |
USPTO; Non-Final Office Action dated Jun. 25, 2021 in U.S. Appl. No. 15/380,909. |
USPTO; Non-Final Office Action dated Jun. 25, 2021 in U.S. Appl. No. 16/105,802. |
USPTO; Non-Final Office Action dated Jun. 25, 2021 in U.S. Appl. No. 16/930,305. |
USPTO; Non-Final Office Action dated Jun. 26, 2018 in U.S. Appl. No. 15/796,593. |
USPTO; Non-Final Office Action dated Jun. 27, 2016 in U.S. Appl. No. 13/166,367. |
USPTO; Non-Final Office Action dated Jun. 27, 2019 in U.S. Appl. No. 15/286,503. |
USPTO; Non-Final Office Action dated Jun. 28, 2019 in U.S. Appl. No. 15/589,849. |
USPTO; Non-Final Office Action dated Jun. 29, 2015 in U.S. Appl. No. 13/966,782. |
USPTO; Non-Final Office Action dated Jun. 3, 2019 in U.S. Appl. No. 15/060,412. |
USPTO; Non-Final Office Action dated Jun. 30, 2016 in U.S. Appl. No. 12/618,355. |
USPTO; Non-Final Office Action dated Jun. 30, 2020 in U.S. Appl. No. 16/258,187. |
USPTO; Non-Final Office Action dated Jun. 4, 2014 in U.S. Appl. No. 13/760,160. |
USPTO; Non-Final Office Action dated Jun. 5, 2018 in U.S. Appl. No. 15/650,686. |
USPTO; Non-Final Office Action dated Jun. 5, 2019 in U.S. Appl. No. 15/489,453. |
USPTO; Non-Final Office Action dated Jun. 5, 2020 in U.S. Appl. No. 16/000,125. |
USPTO; Non-Final Office Action dated Jun. 7, 2017 in U.S. Appl. No. 14/656,588. |
USPTO; Non-Final Office Action dated Jun. 9, 2016 in U.S. Appl. No. 13/169,951. |
USPTO; Non-Final Office Action dated Mar. 1, 2019 in U.S. Appl. No. 15/660,805. |
USPTO; Non-Final Office Action dated Mar. 10, 2020 in U.S. Appl. No. 15/611,707. |
USPTO; Non-Final Office Action dated Mar. 11, 2020 in U.S. Appl. No. 15/636,307. |
USPTO; Non-Final Office Action dated Mar. 12, 2018 in U.S. Appl. No. 14/090,750. |
USPTO; Non-Final Office Action dated Mar. 13, 2019 in U.S. Appl. No. 15/836,547. |
USPTO; Non-Final Office Action dated Mar. 15, 2011 in U.S. Appl. No. 12/193,924. |
USPTO; Non-Final Office Action dated Mar. 16, 2015 in U.S. Appl. No. 14/183,187. |
USPTO; Non-Final Office Action dated Mar. 16, 2015 in U.S. Appl. No. 29/447,298. |
USPTO; Non-Final Office Action dated Mar. 16, 2020 in U.S. Appl. No. 16/116,708. |
USPTO; Non-Final Office Action dated Mar. 17, 2020 in U.S. Appl. No. 15/835,328. |
USPTO; Non-Final Office Action dated Mar. 18, 2010 in U.S. Appl. No. 12/489,252. |
USPTO; Non-Final Office Action dated Mar. 18, 2021 in U.S. Appl. No. 15/835,328. |
USPTO; Non-Final Office Action dated Mar. 19, 2015 in U.S. Appl. No. 14/079,302. |
USPTO; Non-Final Office Action dated Mar. 19, 2015 in U.S. Appl. No. 14/166,462. |
USPTO; Non-Final Office Action dated Mar. 19, 2019 in U.S. Appl. No. 15/691,241. |
USPTO; Non-Final Office Action dated Mar. 19, 2020 in U.S. Appl. No. 16/105,802. |
USPTO; Non-Final Office Action dated Mar. 19, 2021 in U.S. Appl. No. 16/004,041. |
USPTO; Non-Final Office Action dated Mar. 2, 2020 in U.S. Appl. No. 16/356,394. |
USPTO; Non-Final Office Action dated Mar. 20, 2012 in U.S. Appl. No. 12/330,096. |
USPTO; Non-Final Office Action dated Mar. 20, 2020 in U.S. Appl. No. 15/861,418. |
USPTO; Non-Final Office Action dated Mar. 21, 2014 in U.S. Appl. No. 13/799,708. |
USPTO; Non-Final Office Action dated Mar. 21, 2016 in U.S. Appl. No. 14/659,152. |
USPTO; Non-Final Office Action dated Mar. 21, 2018 in U.S. Appl. No. 14/752,712. |
USPTO; Non-Final Office Action dated Mar. 22, 2016 in U.S. Appl. No. 14/987,420. |
USPTO; Non-Final Office Action dated Mar. 23, 2017 in U.S. Appl. No. 14/188,760. |
USPTO; Non-Final Office Action dated Mar. 23, 2021 in U.S. Appl. No. 16/151,074. |
USPTO; Non-Final Office Action dated Mar. 24, 2020 in U.S. Appl. No. 15/896,986. |
USPTO; Non-Final Office Action dated Mar. 25, 2015 in U.S. Appl. No. 12/754,223. |
USPTO; Non-Final Office Action dated Mar. 26, 2015 in U.S. Appl. No. 14/031,982. |
USPTO; Non-Final Office Action dated Mar. 27, 2018 in U.S. Appl. No. 14/219,839. |
USPTO; Non-Final Office Action dated Mar. 28, 2001 in U.S. Appl. No. 09/452,844. |
USPTO; Non-Final Office Action dated Mar. 28, 2019 in U.S. Appl. No. 15/205,827. |
USPTO; Non-Final Office Action dated Mar. 29, 2013 in U.S. Appl. No. 13/094,402. |
USPTO; Non-Final Office Action dated Mar. 29, 2019 in U.S. Appl. No. 15/940,801. |
USPTO; Non-Final Office Action dated Mar. 29, 2021 in U.S. Appl. No. 16/206,589. |
USPTO; Non-Final Office Action dated Mar. 3, 2016 in U.S. Appl. No. 14/622,603. |
USPTO; Non-Final Office Action dated Mar. 3, 2020 in U.S. Appl. No. 16/000,109. |
USPTO; Non-Final Office Action dated Mar. 30, 2016 in U.S. Appl. No. 14/808,979. |
USPTO; Non-Final Office Action dated Mar. 30, 2020 in U.S. Appl. No. 15/860,564. |
USPTO; Non-Final Office Action dated Mar. 30, 2021 in U.S. Appl. No. 16/252,567. |
USPTO; Non-Final Office Action dated Mar. 31, 2017 in U.S. Appl. No. 15/205,890. |
USPTO; Non-Final Office Action dated Mar. 4, 2020 in U.S. Appl. No. 16/036,692. |
USPTO; Non-Final Office Action dated Mar. 4, 2021 in U.S. Appl. No. 16/252,569. |
USPTO; Non-Final Office Action dated Mar. 5, 2020 in U.S. Appl. No. 14/508,489. |
USPTO; Non-Final Office Action dated Mar. 6, 2017 in U.S. Appl. No. 14/465,252. |
USPTO; Non-Final Office Action dated Mar. 7, 2019 in U.S. Appl. No. 15/598,169. |
USPTO; Non-Final Office Action dated Mar. 8, 2019 in U.S. Appl. No. 15/917,224. |
USPTO; Non-Final Office Action dated May 1, 2020 in U.S. Appl. No. 15/917,224. |
USPTO; Non-Final Office Action dated May 1, 2020 in U.S. Appl. No. 15/925,532. |
USPTO; Non-Final Office Action dated May 10, 2016 in U.S. Appl. No. 13/651,144. |
USPTO; Non-Final Office Action dated May 10, 2017 in U.S. Appl. No. 14/606,364. |
USPTO; Non-Final Office Action dated May 10, 2021 in U.S. Appl. No. 16/601,593. |
USPTO; Non-Final Office Action dated May 12, 2020 in U.S. Appl. No. 16/454,063. |
USPTO; Non-Final Office Action dated May 12, 2021 in U.S. Appl. No. 14/829,565. |
USPTO; Non-Final Office Action dated May 13, 2003 in U.S. Appl. No. 10/222,229. |
USPTO; Non-Final Office Action dated May 14, 2018 in U.S. Appl. No. 15/205,827. |
USPTO; Non-Final Office Action dated May 15, 2014 in U.S. Appl. No. 13/646,471. |
USPTO; Non-Final Office Action dated May 15, 2018 in U.S. Appl. No. 14/508,489. |
USPTO; Non-Final Office Action dated May 15, 2020 in U.S. Appl. No. 15/974,988. |
USPTO; Non-Final Office Action dated May 16, 2018 in U.S. Appl. No. 14/645,234. |
USPTO; Non-Final Office Action dated May 17, 2017 in U.S. Appl. No. 13/651,144. |
USPTO; Non-Final Office Action dated May 17, 2018 in U.S. Appl. No. 15/729,485. |
USPTO; Non-Final Office Action dated May 18, 2016 in U.S. Appl. No. 14/449,838. |
USPTO; Non-Final Office Action dated May 18, 2017 in U.S. Appl. No. 14/884,695. |
USPTO; Non-Final Office Action dated May 18, 2017 in U.S. Appl. No. 14/886,571. |
USPTO; Non-Final Office Action dated May 19, 2021 in U.S. Appl. No. 16/000,125. |
USPTO; Non-Final Office Action dated May 19, 2021 in U.S. Appl. No. 16/828,753. |
USPTO; Non-Final Office Action dated May 2, 2021 in U.S. Appl. No. 16/240,392. |
USPTO; Non-Final Office Action dated May 20, 2021 in U.S. Appl. No. 15/917,224. |
USPTO; Non-Final Office Action dated May 22, 2012 in U.S. Appl. No. 12/436,300. |
USPTO; Non-Final Office Action dated May 22, 2018 in U.S. Appl. No. 15/262,990. |
USPTO; Non-Final Office Action dated May 23, 2013 in U.S. Appl. No. 13/465,340. |
USPTO; Non-Final Office Action dated May 25, 2016 in U.S. Appl. No. 13/727,324. |
USPTO; Non-Final Office Action dated May 25, 2018 in U.S. Appl. No. 14/568,647. |
USPTO; Non-Final Office Action dated May 25, 2021 in U.S. Appl. No. 15/985,539. |
USPTO; Non-Final Office Action dated May 25, 2021 in U.S. Appl. No. 16/935,280. |
USPTO; Non-Final Office Action dated May 27, 2015 in U.S. Appl. No. 13/154,271. |
USPTO; Non-Final Office Action dated May 27, 2020 in U.S. Appl. No. 15/402,993. |
USPTO; Non-Final Office Action dated May 27, 2020 in U.S. Appl. No. 16/100,012. |
USPTO; Non-Final Office Action dated May 27, 2020 in U.S. Appl. No. 16/252,567. |
USPTO; Non-Final Office Action dated May 28, 2013 in U.S. Appl. No. 13/563,274. |
USPTO; Non-Final Office Action dated May 28, 2015 in U.S. Appl. No. 13/651,144. |
USPTO; Non-Final Office Action dated May 29, 2018 in U.S. Appl. No. 15/719,208. |
USPTO; Non-Final Office Action dated May 29, 2020 in U.S. Appl. No. 16/205,899. |
USPTO; Non-Final Office Action dated May 3, 2016 in U.S. Appl. No. 14/937,053. |
USPTO; Non-Final Office Action dated May 3, 2021 in U.S. Appl. No. 16/878,443. |
USPTO; Non-Final Office Action dated May 30, 2019 in U.S. Appl. No. 15/900,425. |
USPTO; Non-Final Office Action dated May 31, 2013 in U.S. Appl. No. 12/436,306. |
USPTO; Non-Final Office Action dated May 31, 2018 in U.S. Appl. No. 15/491,726. |
USPTO; Non-Final Office Action dated May 31, 2019 in U.S. Appl. No. 15/380,909. |
USPTO; Non-Final Office Action dated May 4, 2016 in U.S. Appl. No. 14/568,647. |
USPTO; Non-Final Office Action dated May 4, 2021 in U.S. Appl. No. 16/872,045. |
USPTO; Non-Final Office Action dated May 7, 2020 in U.S. Appl. No. 16/004,041. |
USPTO; Non-Final Office Action dated May 7, 2021 in U.S. Appl. No. 16/423,824. |
USPTO; Non-Final Office Action dated May 8, 2019 in U.S. Appl. No. 15/925,532. |
USPTO; Non-Final Office Action dated Nov. 14, 2014 in U.S. Appl. No. 14/069,244. |
USPTO; Non-Final Office Action dated Nov. 14, 2018 in U.S. Appl. No. 15/377,439. |
USPTO; Non-Final Office Action dated Nov. 15, 2013 in U.S. Appl. No. 13/612,538. |
USPTO; Non-Final Office Action dated Nov. 15, 2018 in U.S. Appl. No. 15/890,037. |
USPTO; Non-Final Office Action dated Nov. 15, 2019 in U.S. Appl. No. 15/802,154. |
USPTO; Non-Final Office Action dated Nov. 16, 2020 in U.S. Appl. No. 16/713,311. |
USPTO; Non-Final Office Action dated Nov. 17, 2015 in U.S. Appl. No. 14/172,220. |
USPTO; Non-Final Office Action dated Nov. 19, 2015 in U.S. Appl. No. 14/659,437. |
USPTO; Non-Final Office Action dated Nov. 20, 2006 in U.S. Appl. No. 10/191,635. |
USPTO; Non-Final Office Action dated Nov. 20, 2013 in U.S. Appl. No. 12/910,607. |
USPTO; Non-Final Office Action dated Nov. 20, 2015 in U.S. Appl. No. 14/260,701. |
USPTO; Non-Final Office Action dated Nov. 20, 2019 in U.S. Appl. No. 15/690,017. |
USPTO; Non-Final Office Action dated Nov. 20, 2019 in U.S. Appl. No. 15/795,056. |
USPTO; Non-Final Office Action dated Nov. 21, 2016 in U.S. Appl. No. 15/144,481. |
USPTO; Non-Final Office Action dated Nov. 23, 2018 in U.S. Appl. No. 15/135,258. |
USPTO; Non-Final Office Action dated Nov. 24, 2015 in U.S. Appl. No. 14/498,036. |
USPTO; Non-Final Office Action dated Nov. 24, 2020 in U.S. Appl. No. 16/039,938. |
USPTO; Non-Final Office Action dated Nov. 25, 2015 in U.S. Appl. No. 14/219,879. |
USPTO; Non-Final Office Action dated Nov. 25, 2015 in U.S. Appl. No. 14/598,532. |
USPTO; Non-Final Office Action dated Nov. 25, 2020 in U.S. Appl. No. 16/105,745. |
USPTO; Non-Final Office Action dated Nov. 25, 2020 in U.S. Appl. No. 16/105,761. |
USPTO; Non-Final Office Action dated Nov. 26, 2014 in U.S. Appl. No. 13/312,591. |
USPTO; Non-Final Office Action dated Nov. 27, 2012 in U.S. Appl. No. 12/618,419. |
USPTO; Non-Final Office Action dated Nov. 27, 2020 in U.S. Appl. No. 16/468,258. |
USPTO; Non-Final Office Action dated Nov. 28, 2016 in U.S. Appl. No. 15/203,632. |
USPTO; Non-Final Office Action dated Nov. 28, 2018 in U.S. Appl. No. 15/795,056. |
USPTO; Non-Final Office Action dated Nov. 29, 2016 in U.S. Appl. No. 15/203,642. |
USPTO; Non-Final Office Action dated Nov. 29, 2017 in U.S. Appl. No. 12/618,355. |
USPTO; Non-Final Office Action dated Nov. 29, 2017 in U.S. Appl. No. 14/444,744. |
USPTO; Non-Final Office Action dated Nov. 29, 2017 in U.S. Appl. No. 14/793,323. |
USPTO; Non-Final Office Action dated Nov. 4, 2020 in U.S. Appl. No. 16/176,517. |
USPTO; Non-Final Office Action dated Nov. 5, 2019 in U.S. Appl. No. 16/152,260. |
USPTO; Non-Final Office Action dated Nov. 5, 2020 in U.S. Appl. No. 16/546,543. |
USPTO; Non-Final Office Action dated Nov. 6, 2015 in U.S. Appl. No. 13/791,339. |
USPTO; Non-Final Office Action dated Nov. 6, 2015 in U.S. Appl. No. 14/457,058. |
USPTO; Non-Final Office Action dated Nov. 7, 2013 in U.S. Appl. No. 13/565,564. |
USPTO; Non-Final Office Action dated Nov. 7, 2019 in U.S. Appl. No. 15/377,439. |
USPTO; Non-Final Office Action dated Nov. 9, 2018 in U.S. Appl. No. 15/636,307. |
USPTO; Non-Final Office Action dated Nov. 9, 2020 in U.S. Appl. No. 16/152,260. |
USPTO; Non-Final Office Action dated Oct. 1, 2012 in U.S. Appl. No. 13/191,762. |
USPTO; Non-Final Office Action dated Oct. 1, 2015 in U.S. Appl. No. 14/571,126. |
USPTO; Non-Final Office Action dated Oct. 1, 2018 in U.S. Appl. No. 15/222,780. |
USPTO; Non-Final Office Action dated Oct. 10, 2012 in U.S. Appl. No. 13/406,791. |
USPTO; Non-Final Office Action dated Oct. 10, 2019 in U.S. Appl. No. 15/672,096. |
USPTO; Non-Final Office Action dated Oct. 12, 2021 in U.S. Appl. No. 16/944,763. |
USPTO; Non-Final Office Action dated Oct. 13, 2021 in U.S. Appl. No. 16/893,206. |
USPTO; Non-Final Office Action dated Oct. 14, 2015 in U.S. Appl. No. 12/436,306. |
USPTO; Non-Final Office Action dated Oct. 15, 2014 in U.S. Appl. No. 13/597,043. |
USPTO; Non-Final Office Action dated Oct. 15, 2021 in U.S. Appl. No. 16/172,535. |
USPTO; Non-Final Office Action dated Oct. 16, 2012 in U.S. Appl. No. 12/847,848. |
USPTO; Non-Final Office Action dated Oct. 16, 2020 in U.S. Appl. No. 16/132,142. |
USPTO; Non-Final Office Action dated Oct. 16, 2020 in U.S. Appl. No. 16/679,885. |
USPTO; Non-Final Office Action dated Oct. 17, 2006 in U.S. Appl. No. 10/932,633. |
USPTO; Non-Final Office Action dated Oct. 17, 2013 in U.S. Appl. No. 13/493,897. |
USPTO; Non-Final Office Action dated Oct. 19, 2012 in U.S. Appl. No. 12/618,355. |
USPTO; Non-Final Office Action dated Oct. 19, 2017 in U.S. Appl. No. 14/457,058. |
USPTO; Non-Final Office Action dated Oct. 19, 2017 in U.S. Appl. No. 14/645,234. |
USPTO; Non-Final Office Action dated Oct. 20, 2015 in U.S. Appl. No. 14/281,477. |
USPTO; Non-Final Office Action dated Oct. 21, 2021 in U.S. Appl. No. 16/468,258. |
USPTO; Non-Final Office Action dated Oct. 22, 2003 in U.S. Appl. No. 10/222,229. |
USPTO; Non-Final Office Action dated Oct. 22, 2012 in U.S. Appl. No. 13/238,960. |
USPTO; Non-Final Office Action dated Oct. 22, 2021 in U.S. Appl. No. 16/042,791. |
USPTO; Non-Final Office Action dated Oct. 22, 2021 in U.S. Appl. No. 17/073,544. |
USPTO; Non-Final Office Action dated Oct. 23, 2017 in U.S. Appl. No. 15/377,439. |
USPTO; Non-Final Office Action dated Oct. 24, 2012 in U.S. Appl. No. 12/193,924. |
USPTO; Non-Final Office Action dated Oct. 24, 2012 in U.S. Appl. No. 12/940,906. |
USPTO; Non-Final Office Action dated Oct. 24, 2013 in U.S. Appl. No. 13/749,878. |
USPTO; Non-Final Office Action dated Oct. 24, 2019 in U.S. Appl. No. 15/402,993. |
USPTO; Non-Final Office Action dated Oct. 24, 2019 in U.S. Appl. No. 15/890,037. |
USPTO; Non-Final Office Action dated Oct. 26, 2015 in U.S. Appl. No. 13/791,246. |
USPTO; Non-Final Office Action dated Oct. 27, 2014 in U.S. Appl. No. 13/169,951. |
USPTO; Non-Final Office Action dated Oct. 29, 2020 in U.S. Appl. No. 16/183,258. |
USPTO; Non-Final Office Action dated Oct. 3, 2017 in U.S. Appl. No. 15/388,410. |
USPTO; Non-Final Office Action dated Oct. 3, 2019 in U.S. Appl. No. 15/491,726. |
USPTO; Non-Final Office Action dated Oct. 30, 2014 in U.S. Appl. No. 13/948,055. |
USPTO; Non-Final Office Action dated Oct. 31, 2003 in U.S. Appl. No. 09/452,844. |
USPTO; Non-Final Office Action dated Oct. 31, 2019 in U.S. Appl. No. 14/457,058. |
USPTO; Non-Final Office Action dated Oct. 4, 2017 in U.S. Appl. No. 15/489,453. |
USPTO; Non-Final Office Action dated Oct. 4, 2018 in U.S. Appl. No. 15/726,222. |
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 15/967,146. |
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 16/840,960. |
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 16/886,405. |
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 16/935,275. |
USPTO; Non-Final Office Action dated Oct. 5, 2021 in U.S. Appl. No. 16/588,807. |
USPTO; Non-Final Office Action dated Oct. 6, 2016 in U.S. Appl. No. 14/457,058. |
USPTO; Non-Final Office Action dated Oct. 6, 2020 in U.S. Appl. No. 15/262,990. |
USPTO; Non-Final Office Action dated Oct. 6, 2020 in U.S. Appl. No. 15/691,241. |
USPTO; Non-Final Office Action dated Oct. 6, 2020 in U.S. Appl. No. 15/940,729. |
USPTO; Non-Final Office Action dated Oct. 6, 2020 in U.S. Appl. No. 15/967,146. |
USPTO; Non-Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 15/380,921. |
USPTO; Non-Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 15/925,532. |
USPTO; Non-Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 16/792,544. |
USPTO; Non-Final Office Action dated Oct. 7, 2015 in U.S. Appl. No. 14/065,114. |
USPTO; Non-Final Office Action dated Oct. 7, 2015 in U.S. Appl. No. 14/246,969. |
USPTO; Non-Final Office Action dated Oct. 8, 2015 in U.S. Appl. No. 14/218,374. |
USPTO; Non-Final Office Action dated Oct. 9, 2014 in U.S. Appl. No. 13/874,708. |
USPTO; Non-Final Office Action dated Oct. 9, 2018 in U.S. Appl. No. 15/182,504. |
USPTO; Non-Final Office Action dated Sep. 1, 2015 in U.S. Appl. No. 13/169,951. |
USPTO; Non-Final Office Action dated Sep. 1, 2016 in U.S. Appl. No. 14/827,177. |
USPTO; Non-Final Office Action dated Sep. 1, 2017 in U.S. Appl. No. 14/997,683. |
USPTO; Non-Final Office Action dated Sep. 1, 2021 in U.S. Appl. No. 16/867,385. |
USPTO; Non-Final Office Action dated Sep. 10, 2018 in U.S. Appl. No. 15/489,453. |
USPTO; Non-Final Office Action dated Sep. 10, 2018 in U.S. Appl. No. 15/836,547. |
USPTO; Non-Final Office Action dated Sep. 10, 2021 in U.S. Appl. No. 17/038,514. |
USPTO; Non-Final Office Action dated Sep. 11, 2013 in U.S. Appl. No. 13/550,419. |
USPTO; Non-Final Office Action dated Sep. 12, 2014 in U.S. Appl. No. 13/941,134. |
USPTO; Non-Final Office Action dated Sep. 13, 2010 in U.S. Appl. No. 12/140,809. |
USPTO; Non-Final Office Action dated Sep. 13, 2018 in U.S. Appl. No. 15/262,990. |
USPTO; Non-Final Office Action dated Sep. 14, 2017 in U.S. Appl. No. 14/568,647. |
USPTO; Non-Final Office Action dated Sep. 14, 2020 in U.S. Appl. No. 15/962,980. |
USPTO; Non-Final Office Action dated Sep. 14, 2021 in U.S. Appl. No. 16/932,707. |
USPTO; Non-Final Office Action dated Sep. 15, 2016 in U.S. Appl. No. 13/597,108. |
USPTO; Non-Final Office Action dated Sep. 16, 2013 in U.S. Appl. No. 13/760,160. |
USPTO; Non-Final Office Action dated Sep. 16, 2016 in U.S. Appl. No. 14/465,252. |
USPTO; Non-Final Office Action dated Sep. 16, 2019 in U.S. Appl. No. 16/213,702. |
USPTO; Non-Final Office Action dated Sep. 16, 2021 in U.S. Appl. No. 15/636,307. |
USPTO; Non-Final Office Action dated Sep. 16, 2021 in U.S. Appl. No. 16/152,260. |
USPTO; Non-Final Office Action dated Sep. 17, 2014 in U.S. Appl. No. 13/187,300. |
USPTO; Non-Final Office Action dated Sep. 18, 2015 in U.S. Appl. No. 14/244,689. |
USPTO; Non-Final Office Action dated Sep. 18, 2019 in U.S. Appl. No. 13/651,144. |
USPTO; Non-Final Office Action dated Sep. 19, 2012 in U.S. Appl. No. 13/016,735. |
USPTO; Non-Final Office Action dated Sep. 19, 2014 in U.S. Appl. No. 13/791,246. |
USPTO; Non-Final Office Action dated Sep. 19, 2017 in U.S. Appl. No. 14/829,565. |
USPTO; Non-Final Office Action dated Sep. 19, 2019 in U.S. Appl. No. 14/829,565. |
USPTO; Non-Final Office Action dated Sep. 19, 2019 in U.S. Appl. No. 15/897,578. |
USPTO; Non-Final Office Action dated Sep. 2, 2020 in U.S. Appl. No. 15/377,439. |
USPTO; Non-Final Office Action dated Sep. 2, 2020 in U.S. Appl. No. 15/890,037. |
USPTO; Non-Final Office Action dated Sep. 20, 2018 in U.S. Appl. No. 13/651,144. |
USPTO; Non-Final Office Action dated Sep. 20, 2018 in U.S. Appl. No. 15/410,503. |
USPTO; Non-Final Office Action dated Sep. 20, 2021 in U.S. Appl. No. 16/202,941. |
USPTO; Non-Final Office Action dated Sep. 21, 2017 in U.S. Appl. No. 14/808,979. |
USPTO; Non-Final Office Action dated Sep. 21, 2017 in U.S. Appl. No. 15/144,481. |
USPTO; Non-Final Office Action dated Sep. 21, 2018 in U.S. Appl. No. 15/659,631. |
USPTO; Non-Final Office Action dated Sep. 21, 2021 in U.S. Appl. No. 16/736,336. |
USPTO; Non-Final Office Action dated Sep. 22, 2015 in U.S. Appl. No. 14/219,839. |
USPTO; Non-Final Office Action dated Sep. 22, 2021 in U.S. Appl. No. 17/126,275. |
USPTO; Non-Final Office Action dated Sep. 23, 2016 in U.S. Appl. No. 15/048,422. |
USPTO; Non-Final Office Action dated Sep. 23, 2021 in U.S. Appl. No. 17/254,111. |
USPTO; Non-Final Office Action dated Sep. 24, 2019 in U.S. Appl. No. 16/251,534. |
USPTO; Non-Final Office Action dated Sep. 26, 2018 in U.S. Appl. No. 15/074,813. |
USPTO; Non-Final Office Action dated Sep. 26, 2018 in U.S. Appl. No. 15/832,188. |
USPTO; Non-Final Office Action dated Sep. 26, 2019 in U.S. Appl. No. 15/727,432. |
USPTO; Non-Final Office Action dated Sep. 27, 2021 in U.S. Appl. No. 17/254,366. |
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 15/491,726. |
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 16/105,745. |
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 16/692,859. |
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 17/023,129. |
USPTO; Non-Final Office Action dated Sep. 29, 2021 in U.S. Appl. No. 16/105,761. |
USPTO; Non-Final Office Action dated Sep. 3, 2020 in U.S. Appl. No. 15/636,307. |
USPTO; Non-Final Office Action dated Sep. 3, 2020 in U.S. Appl. No. 16/242,852. |
USPTO; Non-Final Office Action dated Sep. 30, 2020 in U.S. Appl. No. 15/491,726. |
USPTO; Non-Final Office Action dated Sep. 30, 2020 in U.S. Appl. No. 16/219,555. |
USPTO; Non-Final Office Action dated Sep. 30, 2021 in U.S. Appl. No. 17/093,224. |
USPTO; Non-Final Office Action dated Sep. 4, 2019 in U.S. Appl. No. 15/615,489. |
USPTO; Non-Final Office Action dated Sep. 6, 2011 in U.S. Appl. No. 12/553,759. |
USPTO; Non-Final Office Action dated Sep. 6, 2018 in U.S. Appl. No. 14/829,565. |
USPTO; Non-Final Office Action dated Sep. 7, 2017 in U.S. Appl. No. 14/660,755. |
USPTO; Non-Final Office Action dated Sep. 7, 2017 in U.S. Appl. No. 15/222,749. |
USPTO; Non-Final Office Action dated Sep. 7, 2017 in U.S. Appl. No. 15/222,780. |
USPTO; Non-Final Office Action dated Sep. 8, 2016 in U.S. Appl. No. 14/508,296. |
USPTO; Non-Final Office Action dated Sep. 8, 2020 in U.S. Appl. No. 16/039,817. |
USPTO; Non-Final Office Action dated Sep. 8, 2020 in U.S. Appl. No. 16/108,950. |
USPTO; Non-Final Office Action dated Sep. 9, 2015 in U.S. Appl. No. 14/090,750. |
USPTO; Non-Final Office Action dated Sep. 9, 2016 in U.S. Appl. No. 14/829,565. |
USPTO; Non-Final Office Action dated Sep. 9, 2020 in U.S. Appl. No. 15/909,705. |
USPTO; Non-Final Rejection dated Nov. 29, 2019 in U.S. Appl. No. 15/949,990. |
USPTO; Notice of Allowance dated Apr. 10, 2014 in U.S. Appl. No. 13/901,341. |
USPTO; Notice of Allowance dated Apr. 11, 2018 in U.S. Appl. No. 15/144,481. |
USPTO; Notice of Allowance dated Apr. 12, 2013 in U.S. Appl. No. 12/618,419. |
USPTO; Notice of Allowance dated Apr. 12, 2016 in U.S. Appl. No. 13/901,400. |
USPTO; Notice of Allowance dated Apr. 15, 2020 in U.S. Appl. No. 16/317,774. |
USPTO; Notice of Allowance dated Apr. 16, 2019 in U.S. Appl. No. 15/705,955. |
USPTO; Notice of Allowance dated Apr. 16, 2020 in U.S. Appl. No. 16/427,288. |
USPTO; Notice of Allowance dated Apr. 16, 2021 in U.S. Appl. No. 15/691,241. |
USPTO; Notice of Allowance dated Apr. 17, 2019 in U.S. Appl. No. 16/171,098. |
USPTO; Notice of Allowance dated Apr. 17, 2020 in U.S. Appl. No. 16/455,406. |
USPTO; Notice of Allowance dated Apr. 19, 2019 in U.S. Appl. No. 15/222,780. |
USPTO; Notice of Allowance dated Apr. 19, 2019 in U.S. Appl. No. 15/273,488. |
USPTO; Notice of Allowance dated Apr. 19, 2019 in U.S. Appl. No. 15/726,222. |
USPTO; Notice of Allowance dated Apr. 2, 2012 in U.S. Appl. No. 12/416,809. |
USPTO; Notice of Allowance dated Apr. 2, 2018 in U.S. Appl. No. 15/254,724. |
USPTO; Notice of Allowance dated Apr. 20, 2018 in U.S. Appl. No. 15/466,149. |
USPTO; Notice of Allowance dated Apr. 21, 2020 in U.S. Appl. No. 16/674,894. |
USPTO; Notice of Allowance dated Apr. 22, 2016 in U.S. Appl. No. 14/172,220. |
USPTO; Notice of Allowance dated Apr. 23, 2013 in U.S. Appl. No. 12/940,906. |
USPTO; Notice of Allowance dated Apr. 24, 2013 in U.S. Appl. No. 13/016,735. |
USPTO; Notice of Allowance dated Apr. 25, 2017 in U.S. Appl. No. 14/835,637. |
USPTO; Notice of Allowance dated Apr. 25, 2019 in U.S. Appl. No. 15/428,808. |
USPTO; Notice of Allowance dated Apr. 26, 2021 in U.S. Appl. No. 16/517,122. |
USPTO; Notice of Allowance dated Apr. 28, 2021 in U.S. Appl. No. 16/453,249. |
USPTO; Notice of Allowance dated Apr. 3, 2020 in U.S. Appl. No. 15/985,261. |
USPTO; Notice of Allowance dated Apr. 3, 2020 in U.S. Appl. No. 16/039,867. |
USPTO; Notice of Allowance dated Apr. 30, 2015 in U.S. Appl. No. 29/481,315. |
USPTO; Notice of Allowance dated Apr. 30, 2021 in U.S. Appl. No. 16/685,787. |
USPTO; Notice of Allowance dated Apr. 4, 2019 in U.S. Appl. No. 12/618,355. |
USPTO; Notice of Allowance dated Apr. 4, 2019 in U.S. Appl. No. 13/169,951. |
USPTO; Notice of Allowance dated Apr. 7, 2014 in U.S. Appl. No. 13/339,609. |
USPTO; Notice of Allowance dated Apr. 7, 2021 in U.S. Appl. No. 15/940,759. |
USPTO; Notice of Allowance dated Apr. 9, 2019 in U.S. Appl. No. 16/026,711. |
USPTO; Notice of Allowance dated Aug. 13, 2014 in U.S. Appl. No. 13/784,362. |
USPTO; Notice of Allowance dated Aug. 13, 2018 in U.S. Appl. No. 13/941,226. |
USPTO; Notice of Allowance dated Aug. 14, 2018 in U.S. Appl. No. 15/476,035. |
USPTO; Notice of Allowance dated Aug. 14, 2019 in U.S. Appl. No. 15/410,503. |
USPTO; Notice of Allowance dated Aug. 15, 2013 in U.S. Appl. No. 13/191,762. |
USPTO; Notice of Allowance dated Aug. 15, 2014 in U.S. Appl. No. 12/910,607. |
USPTO; Notice of Allowance dated Aug. 15, 2019 in U.S. Appl. No. 14/645,234. |
USPTO; Notice of Allowance dated Aug. 16, 2017 in U.S. Appl. No. 14/606,364. |
USPTO; Notice of Allowance dated Aug. 16, 2019 in U.S. Appl. No. 15/836,547. |
USPTO; Notice of Allowance dated Aug. 17, 2016 in U.S. Appl. No. 14/498,036. |
USPTO; Notice of Allowance dated Aug. 17, 2020 in U.S. Appl. No. 15/843,899. |
USPTO; Notice of Allowance dated Aug. 18, 2020 in U.S. Appl. No. 15/135,258. |
USPTO; Notice of Allowance dated Aug. 19, 2016 in U.S. Appl. No. 14/268,348. |
USPTO; Notice of Allowance dated Aug. 19, 2020 in U.S. Appl. No. 15/861,418. |
USPTO; Notice of Allowance dated Aug. 2, 2016 in U.S. Appl. No. 14/622,603. |
USPTO; Notice of Allowance dated Aug. 21, 2015 in U.S. Appl. No. 14/505,290. |
USPTO; Notice of Allowance dated Aug. 21, 2019 in U.S. Appl. No. 15/592,730. |
USPTO; Notice of Allowance dated Aug. 22, 2019 in U.S. Appl. No. 15/660,805. |
USPTO; Notice of Allowance dated Aug. 22, 2019 in U.S. Appl. No. 15/985,298. |
USPTO; Notice of Allowance dated Aug. 23, 2017 in U.S. Appl. No. 15/222,738. |
USPTO; Notice of Allowance dated Aug. 24, 2015 in U.S. Appl. No. 13/677,133. |
USPTO; Notice of Allowance dated Aug. 24, 2016 in U.S. Appl. No. 13/791,339. |
USPTO; Notice of Allowance dated Aug. 25, 2021 in U.S. Appl. No. 15/611,707. |
USPTO; Notice of Allowance dated Aug. 26, 2019 in U.S. Appl. No. 15/940,801. |
USPTO; Notice of Allowance dated Aug. 26, 2020 in U.S. Appl. No. 15/896,986. |
USPTO; Notice of Allowance dated Aug. 28, 2015 in U.S. Appl. No. 13/597,043. |
USPTO; Notice of Allowance dated Aug. 29, 2018 in U.S. Appl. No. 14/090,750. |
USPTO; Notice of Allowance dated Aug. 30, 2016 in U.S. Appl. No. 14/268,348. |
USPTO; Notice of Allowance dated Aug. 30, 2018 in U.S. Appl. No. 15/222,749. |
USPTO; Notice of Allowance dated Aug. 30, 2018 in U.S. Appl. No. 15/640,239. |
USPTO; Notice of Allowance dated Aug. 30, 2019 in U.S. Appl. No. 15/917,262. |
USPTO; Notice of Allowance dated Aug. 31, 2015 in U.S. Appl. No. 14/183,187. |
USPTO; Notice of Allowance dated Aug. 31, 2020 in U.S. Appl. No. 16/356,394. |
USPTO; Notice of Allowance dated Aug. 4, 2011 in U.S. Appl. No. 12/118,596. |
USPTO; Notice of Allowance dated Aug. 4, 2015 in U.S. Appl. No. 13/677,133. |
USPTO; Notice of Allowance dated Aug. 5, 2015 in U.S. Appl. No. 13/901,372. |
USPTO; Notice of Allowance dated Aug. 5, 2016 in U.S. Appl. No. 14/218,374. |
USPTO; Notice of Allowance dated Aug. 5, 2020 in U.S. Appl. No. 16/130,798. |
USPTO; Notice of Allowance dated Aug. 5, 2020 in U.S. Appl. No. 16/258,187. |
USPTO; Notice of Allowance dated Aug. 6, 2020 in U.S. Appl. No. 14/457,058. |
USPTO; Notice of Allowance dated Aug. 6, 2020 in U.S. Appl. No. 16/255,639. |
USPTO; Notice of Allowance dated Aug. 7, 2017 in U.S. Appl. No. 15/203,642. |
USPTO; Notice of Allowance dated Aug. 8, 2017 in U.S. Appl. No. 15/380,895. |
USPTO; Notice of Allowance dated Dec. 10, 2018 in U.S. Appl. No. 15/863,340. |
USPTO; Notice of Allowance dated Dec. 13, 2010 in U.S. Appl. No. 12/357,174. |
USPTO; Notice of Allowance dated Dec. 14, 2015 in U.S. Appl. No. 29/514,264. |
USPTO; Notice of Allowance dated Dec. 14, 2016 in U.S. Appl. No. 14/079,302. |
USPTO; Notice of Allowance dated Dec. 14, 2017 in U.S. Appl. No. 14/956,115. |
USPTO; Notice of Allowance dated Dec. 15, 2017 in U.S. Appl. No. 15/397,319. |
USPTO; Notice of Allowance dated Dec. 15, 2020 in U.S. Appl. No. 16/242,852. |
USPTO; Notice of Allowance dated Dec. 16, 2019 in U.S. Appl. No. 16/188,690. |
USPTO; Notice of Allowance dated Dec. 17, 2019 in U.S. Appl. No. 15/900,425. |
USPTO; Notice of Allowance dated Dec. 19, 2013 in U.S. Appl. No. 29/448,094. |
USPTO; Notice of Allowance dated Dec. 19, 2017 in U.S. Appl. No. 15/489,660. |
USPTO; Notice of Allowance dated Dec. 2, 2015 in U.S. Appl. No. 14/563,044. |
USPTO; Notice of Allowance dated Dec. 21, 2018 in U.S. Appl. No. 15/067,028. |
USPTO; Notice of Allowance dated Dec. 22, 2017 in U.S. Appl. No. 15/397,237. |
USPTO; Notice of Allowance dated Dec. 28, 2018 in U.S. Appl. No. 15/388,410. |
USPTO; Notice of Allowance dated Dec. 28, 2020 in U.S. Appl. No. 16/833,279. |
USPTO; Notice of Allowance dated Dec. 3, 2019 in U.S. Appl. No. 15/205,827. |
USPTO; Notice of Allowance dated Dec. 31, 2019 in U.S. Appl. No. 15/796,593. |
USPTO; Notice of Allowance dated Dec. 5, 2017 in U.S. Appl. No. 15/832,188. |
USPTO; Notice of Allowance dated Dec. 6, 2017 in U.S. Appl. No. 14/886,571. |
USPTO; Notice of Allowance dated Dec. 6, 2018 in U.S. Appl. No. 15/711,989. |
USPTO; Notice of Allowance dated Dec. 9, 2019 in U.S. Appl. No. 16/213,702. |
USPTO; Notice of Allowance dated Feb. 10, 2016 in U.S. Appl. No. 13/154,271. |
USPTO; Notice of Allowance dated Feb. 10, 2020 in U.S. Appl. No. 13/651,144. |
USPTO; Notice of Allowance dated Feb. 10, 2020 in U.S. Appl. No. 14/188,760. |
USPTO; Notice of Allowance dated Feb. 10, 2021 in U.S. Appl. No. 14/219,839. |
USPTO; Notice of Allowance dated Feb. 10, 2021 in U.S. Appl. No. 16/205,899. |
USPTO; Notice of Allowance dated Feb. 11, 2015 in U.S. Appl. No. 13/284,642. |
USPTO; Notice of Allowance dated Feb. 11, 2016 in U.S. Appl. No. 14/244,689. |
USPTO; Notice of Allowance dated Feb. 12, 2014 in U.S. Appl. No. 13/465,340. |
USPTO; Notice of Allowance dated Feb. 12, 2021 in U.S. Appl. No. 16/128,282. |
USPTO; Notice of Allowance dated Feb. 14, 2013 in U.S. Appl. No. 13/410,970. |
USPTO; Notice of Allowance dated Feb. 16, 2016 in U.S. Appl. No. 14/634,342. |
USPTO; Notice of Allowance dated Feb. 17, 2015 in U.S. Appl. No. 29/481,308. |
USPTO; Notice of Allowance dated Feb. 19, 2021 in U.S. Appl. No. 16/183,258. |
USPTO; Notice of Allowance dated Feb. 2, 2016 in U.S. Appl. No. 13/646,403. |
USPTO; Notice of Allowance dated Feb. 20, 2008 in U.S. Appl. No. 10/191,635. |
USPTO; Notice of Allowance dated Feb. 21, 2019 in U.S. Appl. No. 15/659,631. |
USPTO; Notice of Allowance dated Feb. 21, 2019 in U.S. Appl. No. 15/662,107. |
USPTO; Notice of Allowance dated Feb. 22, 2016 in U.S. Appl. No. 14/065,114. |
USPTO; Notice of Allowance dated Feb. 23, 2006 in U.S. Appl. No. 09/807,580. |
USPTO; Notice of Allowance dated Feb. 23, 2016 in U.S. Appl. No. 14/327,134. |
USPTO; Notice of Allowance dated Feb. 24, 2021 in U.S. Appl. No. 16/167,164. |
USPTO; Notice of Allowance dated Feb. 25, 2015 in U.S. Appl. No. 13/612,538. |
USPTO; Notice of Allowance dated Feb. 25, 2019 in U.S. Appl. No. 15/074,813. |
USPTO; Notice of Allowance dated Feb. 26, 2015 in U.S. Appl. No. 13/677,151. |
USPTO; Notice of Allowance dated Feb. 27, 2015 in U.S. Appl. No. 13/948,055. |
USPTO; Notice of Allowance dated Feb. 27, 2017 in U.S. Appl. No. 14/246,969. |
USPTO; Notice of Allowance dated Feb. 28, 2020 in U.S. Appl. No. 15/589,849. |
USPTO; Notice of Allowance dated Feb. 28, 2020 in U.S. Appl. No. 15/615,489. |
USPTO; Notice of Allowance dated Feb. 3, 2016 in U.S. Appl. No. 12/436,306. |
USPTO; Notice of Allowance dated Feb. 3, 2017 in U.S. Appl. No. 14/977,291. |
USPTO; Notice of Allowance dated Feb. 5, 2021 in U.S. Appl. No. 16/000,156. |
USPTO; Notice of Allowance dated Feb. 7, 2018 in U.S. Appl. No. 15/050,159. |
USPTO; Notice of Allowance dated Feb. 7, 2020 in U.S. Appl. No. 15/672,119. |
USPTO; Notice of Allowance dated Feb. 8, 2019 in U.S. Appl. No. 15/892,756. |
USPTO; Notice of Allowance dated Feb. 8, 2021 in U.S. Appl. No. 16/132,142. |
USPTO; Notice of Allowance dated Jan. 12, 2015 in U.S. Appl. No. 29/481,312. |
USPTO; Notice of Allowance dated Jan. 14, 2016 in U.S. Appl. No. 14/018,345. |
USPTO; Notice of Allowance dated Jan. 14, 2021 in U.S. Appl. No. 15/835,352. |
USPTO; Notice of Allowance dated Jan. 16, 2014 in U.S. Appl. No. 12/847,848. |
USPTO; Notice of Allowance dated Jan. 16, 2020 in U.S. Appl. No. 15/879,209. |
USPTO; Notice of Allowance dated Jan. 17, 2018 in U.S. Appl. No. 15/254,724. |
USPTO; Notice of Allowance dated Jan. 20, 2015 in U.S. Appl. No. 13/941,134. |
USPTO; Notice of Allowance dated Jan. 20, 2016 in U.S. Appl. No. 13/760,160. |
USPTO; Notice of Allowance dated Jan. 23, 2019 in U.S. Appl. No. 15/729,485. |
USPTO; Notice of Allowance dated Jan. 23, 2020 in U.S. Appl. No. 29/634,768. |
USPTO; Notice of Allowance dated Jan. 25, 2021 in U.S. Appl. No. 16/679,885. |
USPTO; Notice of Allowance dated Jan. 27, 2012 in U.S. Appl. No. 12/553,759. |
USPTO; Notice of Allowance dated Jan. 27, 2015 in U.S. Appl. No. 12/763,037. |
USPTO; Notice of Allowance dated Jan. 27, 2017 in U.S. Appl. No. 14/508,296. |
USPTO; Notice of Allowance dated Jan. 27, 2017 in U.S. Appl. No. 14/827,177. |
USPTO; Notice of Allowance dated Jan. 28, 2020 in U.S. Appl. No. 16/208,062. |
USPTO; Notice of Allowance dated Jan. 29, 2020 in U.S. Appl. No. 15/719,208. |
USPTO; Notice of Allowance dated Jan. 3, 2020 in U.S. Appl. No. 16/147,047. |
USPTO; Notice of Allowance dated Jan. 30, 2020 in U.S. Appl. No. 16/018,692. |
USPTO; Notice of Allowance dated Jan. 4, 2013 in U.S. Appl. No. 12/875,889. |
USPTO; Notice of Allowance dated Jan. 6, 2014 in U.S. Appl. No. 13/570,067. |
USPTO; Notice of Allowance dated Jan. 6, 2020 in U.S. Appl. No. 15/727,432. |
USPTO; Notice of Allowance dated Jan. 9, 2012 in U.S. Appl. No. 12/901,323. |
USPTO; Notice of Allowance dated Jan. 9, 2019 in U.S. Appl. No. 15/673,110. |
USPTO; Notice of Allowance dated Jan. 9, 2019 in U.S. Appl. No. 15/683,701. |
USPTO; Notice of Allowance dated Jul. 1, 2021 in U.S. Appl. No. 29/679,620. |
USPTO; Notice of Allowance dated Jul. 10, 2019 in U.S. Appl. No. 16/046,218. |
USPTO; Notice of Allowance dated Jul. 10, 2020 in U.S. Appl. No. 15/998,775. |
USPTO; Notice of Allowance dated Jul. 11, 2018 in U.S. Appl. No. 14/817,953. |
USPTO; Notice of Allowance dated Jul. 12, 2005 in U.S. Appl. No. 10/838,510. |
USPTO; Notice of Allowance dated Jul. 12, 2012 in U.S. Appl. No. 13/085,531. |
USPTO; Notice of Allowance dated Jul. 12, 2018 in U.S. Appl. No. 15/254,605. |
USPTO; Notice of Allowance dated Jul. 14, 2017 in U.S. Appl. No. 15/222,715. |
USPTO; Notice of Allowance dated Jul. 16, 2015 in U.S. Appl. No. 13/563,066. |
USPTO; Notice of Allowance dated Jul. 17, 2013 in U.S. Appl. No. 13/450,368. |
USPTO; Notice of Allowance dated Jul. 17, 2019 in U.S. Appl. No. 15/182,504. |
USPTO; Notice of Allowance dated Jul. 18, 2018 in U.S. Appl. No. 15/640,239. |
USPTO; Notice of Allowance dated Jul. 2, 2020 in U.S. Appl. No. 15/672,096. |
USPTO; Notice of Allowance dated Jul. 20, 2015 in U.S. Appl. No. 14/018,231. |
USPTO; Notice of Allowance dated Jul. 20, 2021 in U.S. Appl. No. 16/704,835. |
USPTO; Notice of Allowance dated Jul. 21, 2021 in U.S. Appl. No. 16/816,078. |
USPTO; Notice of Allowance dated Jul. 24, 2017 in U.S. Appl. No. 15/210,256. |
USPTO; Notice of Allowance dated Jul. 24, 2020 in U.S. Appl. No. 16/158,077. |
USPTO; Notice of Allowance dated Jul. 26, 2005 in U.S. Appl. No. 10/033,058. |
USPTO; Notice of Allowance dated Jul. 26, 2010 in U.S. Appl. No. 12/121,085. |
USPTO; Notice of Allowance dated Jul. 26, 2016 in U.S. Appl. No. 14/937,053. |
USPTO; Notice of Allowance dated Jul. 27, 2011 in U.S. Appl. No. 12/430,751. |
USPTO; Notice of Allowance dated Jul. 28, 2020 in U.S. Appl. No. 16/193,789. |
USPTO; Notice of Allowance dated Jul. 29, 2004 in U.S. Appl. No. 09/771,673. |
USPTO; Notice of Allowance dated Jul. 3, 2014 in U.S. Appl. No. 13/102,980. |
USPTO; Notice of Allowance dated Jul. 31, 2019 in U.S. Appl. No. 15/987,755. |
USPTO; Notice of Allowance dated Jul. 6, 2015 in U.S. Appl. No. 29/447,298. |
USPTO; Notice of Allowance dated Jul. 6, 2020 in U.S. Appl. No. 13/184,351. |
USPTO; Notice of Allowance dated Jul. 7, 2020 in U.S. Appl. No. 16/194,041. |
USPTO; Notice of Allowance dated Jul. 9, 2021 in U.S. Appl. No. 29/692,490. |
USPTO; Notice of Allowance dated Jun. 10, 2020 in U.S. Appl. No. 29/615,000. |
USPTO; Notice of Allowance dated Jun. 11, 2015 in U.S. Appl. No. 13/312,591. |
USPTO; Notice of Allowance dated Jun. 11, 2019 in U.S. Appl. No. 14/752,712. |
USPTO; Notice of Allowance dated Jun. 12, 2015 in U.S. Appl. No. 13/563,066. |
USPTO; Notice of Allowance dated Jun. 13, 2018 in U.S. Appl. No. 15/798,120. |
USPTO; Notice of Allowance dated Jun. 13, 2019 in U.S. Appl. No. 16/396,475. |
USPTO; Notice of Allowance dated Jun. 16, 2011 in U.S. Appl. No. 12/430,751. |
USPTO; Notice of Allowance dated Jun. 16, 2017 in U.S. Appl. No. 29/570,711. |
USPTO; Notice of Allowance dated Jun. 17, 2003 in U.S. Appl. No. 09/452,844. |
USPTO; Notice of Allowance dated Jun. 17, 2021 in U.S. Appl. No. 16/924,595. |
USPTO; Notice of Allowance dated Jun. 18, 2004 in U.S. Appl. No. 10/603,515. |
USPTO; Notice of Allowance dated Jun. 19, 2015 in U.S. Appl. No. 13/915,732. |
USPTO; Notice of Allowance dated Jun. 19, 2020 in U.S. Appl. No. 16/161,744. |
USPTO; Notice of Allowance dated Jun. 2, 2016 in U.S. Appl. No. 14/260,701. |
USPTO; Notice of Allowance dated Jun. 2, 2016 in U.S. Appl. No. 14/571,126. |
USPTO; Notice of Allowance dated Jun. 2, 2021 in U.S. Appl. No. 16/637,134. |
USPTO; Notice of Allowance dated Jun. 24, 2019 in U.S. Appl. No. 15/650,686. |
USPTO; Notice of Allowance dated Jun. 24, 2020 in U.S. Appl. No. 16/014,981. |
USPTO; Notice of Allowance dated Jun. 25, 2015 in U.S. Appl. No. 13/912,666. |
USPTO; Notice of Allowance dated Jun. 26, 2018 in U.S. Appl. No. 29/604,288. |
USPTO; Notice of Allowance dated Jun. 27, 2018 in U.S. Appl. No. 14/808,979. |
USPTO; Notice of Allowance dated Jun. 28, 2017 in U.S. Appl. No. 13/166,367. |
USPTO; Notice of Allowance dated Jun. 29, 2018 in U.S. Appl. No. 15/135,224. |
USPTO; Notice of Allowance dated Jun. 29, 2021 in U.S. Appl. No. 15/377,439. |
USPTO; Notice of Allowance dated Jun. 3, 2019 in U.S. Appl. No. 15/434,051. |
USPTO; Notice of Allowance dated Jun. 30, 2020 in U.S. Appl. No. 15/860,564. |
USPTO; Notice of Allowance dated Jun. 4, 2014 in U.S. Appl. No. 13/784,388. |
USPTO; Notice of Allowance dated Jun. 4, 2021 in U.S. Appl. No. 15/923,834. |
USPTO; Notice of Allowance dated Jun. 6, 2014 in U.S. Appl. No. 13/901,341. |
USPTO; Notice of Allowance dated Jun. 7, 2012 in U.S. Appl. No. 12/330,096. |
USPTO; Notice of Allowance dated Jun. 7, 2017 in U.S. Appl. No. 14/981,468. |
USPTO; Notice of Allowance dated Mar. 1, 2017 in U.S. Appl. No. 13/727,324. |
USPTO; Notice of Allowance dated Mar. 10, 2015 in U.S. Appl. No. 13/874,708. |
USPTO; Notice of Allowance dated Mar. 10, 2021 in U.S. Appl. No. 16/055,532. |
USPTO; Notice of Allowance dated Mar. 10, 2021 in U.S. Appl. No. 16/400,814. |
USPTO; Notice of Allowance dated Mar. 12, 2020 in U.S. Appl. No. 15/795,056. |
USPTO; Notice of Allowance dated Mar. 12, 2020 in U.S. Appl. No. 15/949,990. |
USPTO; Notice of Allowance dated Mar. 13, 2019 in U.S. Appl. No. 15/144,506. |
USPTO; Notice of Allowance dated Mar. 16, 2012 in U.S. Appl. No. 12/718,731. |
USPTO; Notice of Allowance dated Mar. 17, 2011 in U.S. Appl. No. 12/140,809. |
USPTO; Notice of Allowance dated Mar. 17, 2015 in U.S. Appl. No. 13/677,151. |
USPTO; Notice of Allowance dated Mar. 17, 2015 in U.S. Appl. No. 13/923,197. |
USPTO; Notice of Allowance dated Mar. 17, 2016 in U.S. Appl. No. 14/018,345. |
USPTO; Notice of Allowance dated Mar. 19, 2021 in U.S. Appl. No. 15/890,037. |
USPTO; Notice of Allowance dated Mar. 20, 2014 in U.S. Appl. No. 13/493,897. |
USPTO; Notice of Allowance dated Mar. 20, 2019 in U.S. Appl. No. 15/672,063. |
USPTO; Notice of Allowance dated Mar. 21, 2016 in U.S. Appl. No. 13/966,782. |
USPTO; Notice of Allowance dated Mar. 21, 2018 in U.S. Appl. No. 15/476,035. |
USPTO; Notice of Allowance dated Mar. 23, 2020 in U.S. Appl. No. 16/038,024. |
USPTO; Notice of Allowance dated Mar. 23, 2021 in U.S. Appl. No. 16/116,708. |
USPTO; Notice of Allowance dated Mar. 25, 2015 in U.S. Appl. No. 14/069,244. |
USPTO; Notice of Allowance dated Mar. 25, 2016 in U.S. Appl. No. 14/693,138. |
USPTO; Notice of Allowance dated Mar. 25, 2019 in U.S. Appl. No. 14/997,683. |
USPTO; Notice of Allowance dated Mar. 26, 2004 in U.S. Appl. No. 09/452,844. |
USPTO; Notice of Allowance dated Mar. 26, 2018 in U.S. Appl. No. 15/144,481. |
USPTO; Notice of Allowance dated Mar. 27, 2014 in U.S. Appl. No. 13/604,498. |
USPTO; Notice of Allowance dated Mar. 27, 2020 in U.S. Appl. No. 15/897,578. |
USPTO; Notice of Allowance dated Mar. 28, 2016 in U.S. Appl. No. 13/283,408. |
USPTO; Notice of Allowance dated Mar. 28, 2016 in U.S. Appl. No. 14/281,477. |
USPTO; Notice of Allowance dated Mar. 30, 2020 in U.S. Appl. No. 16/417,938. |
USPTO; Notice of Allowance dated Mar. 31, 2015 in U.S. Appl. No. 13/948,055. |
USPTO; Notice of Allowance dated Mar. 5, 2020 in U.S. Appl. No. 15/060,412. |
USPTO; Notice of Allowance dated Mar. 5, 2020 in U.S. Appl. No. 16/167,225. |
USPTO; Notice of Allowance dated Mar. 6, 2012 in U.S. Appl. No. 12/330,096. |
USPTO; Notice of Allowance dated Mar. 7, 2017 in U.S. Appl. No. 13/597,108. |
USPTO; Notice of Allowance dated Mar. 8, 2006 in U.S. Appl. No. 10/222,229. |
USPTO; Notice of Allowance dated May 1, 2019 in U.S. Appl. No. 16/171,098. |
USPTO; Notice of Allowance dated May 11, 2015 in U.S. Appl. No. 29/511,011. |
USPTO; Notice of Allowance dated May 11, 2015 in U.S. Appl. No. 29/514,153. |
USPTO; Notice of Allowance dated May 12, 2021 in U.S. Appl. No. 16/800,114. |
USPTO; Notice of Allowance dated May 13, 2021 in U.S. Appl. No. 16/176,517. |
USPTO; Notice of Allowance dated May 14, 2012 in U.S. Appl. No. 29/411,637. |
USPTO; Notice of Allowance dated May 14, 2015 in U.S. Appl. No. 13/312,591. |
USPTO; Notice of Allowance dated May 14, 2019 in U.S. Appl. No. 15/798,150. |
USPTO; Notice of Allowance dated May 16, 2016 in U.S. Appl. No. 14/598,532. |
USPTO; Notice of Allowance dated May 18, 2016 in U.S. Appl. No. 14/571,126. |
USPTO; Notice of Allowance dated May 18, 2017 in U.S. Appl. No. 15/210,256. |
USPTO; Notice of Allowance dated May 19, 2021 in U.S. Appl. No. 29/702,881. |
USPTO; Notice of Allowance dated May 2, 2014 in U.S. Appl. No. 13/679,502. |
USPTO; Notice of Allowance dated May 20, 2020 in U.S. Appl. No. 15/672,096. |
USPTO; Notice of Allowance dated May 20, 2021 in U.S. Appl. No. 16/752,514. |
USPTO; Notice of Allowance dated May 21, 2007 in U.S. Appl. No. 10/191,635. |
USPTO; Notice of Allowance dated May 21, 2019 in U.S. Appl. No. 15/627,189. |
USPTO; Notice of Allowance dated May 21, 2020 in U.S. Appl. No. 16/280,964. |
USPTO; Notice of Allowance dated May 22, 2017 in U.S. Appl. No. 15/222,738. |
USPTO; Notice of Allowance dated May 23, 2016 in U.S. Appl. No. 12/754,223. |
USPTO; Notice of Allowance dated May 23, 2018 in U.S. Appl. No. 15/499,647. |
USPTO; Notice of Allowance dated May 24, 2019 in U.S. Appl. No. 15/340,512. |
USPTO; Notice of Allowance dated May 24, 2021 in U.S. Appl. No. 16/765,125. |
USPTO; Notice of Allowance dated May 26, 2020 in U.S. Appl. No. 16/036,692. |
USPTO; Notice of Allowance dated May 27, 2021 in U.S. Appl. No. 16/827,506. |
USPTO; Notice of Allowance dated May 29, 2014 in U.S. Appl. No. 13/550,419. |
USPTO; Notice of Allowance dated May 29, 2020 in U.S. Appl. No. 16/245,006. |
USPTO; Notice of Allowance dated May 3, 2013 in U.S. Appl. No. 13/040,013. |
USPTO; Notice of Allowance dated May 31, 2016 in U.S. Appl. No. 14/659,437. |
USPTO; Notice of Allowance dated May 31, 2019 in U.S. Appl. No. 15/957,565. |
USPTO; Notice of Allowance dated May 4, 2017 in U.S. Appl. No. 15/048,422. |
USPTO; Notice of Allowance dated May 6, 2019 in U.S. Appl. No. 15/673,278. |
USPTO; Notice of Allowance dated May 9, 2011 in U.S. Appl. No. 12/778,808. |
USPTO; Notice of Allowance dated Nov. 1, 2018 in U.S. Appl. No. 15/499,647. |
USPTO; Notice of Allowance dated Nov. 12, 2020 in U.S. Appl. No. 16/897,158. |
USPTO; Notice of Allowance dated Nov. 14, 2016 in U.S. Appl. No. 13/941,216. |
USPTO; Notice of Allowance dated Nov. 14, 2018 in U.S. Appl. No. 15/388,410. |
USPTO; Notice of Allowance dated Nov. 14, 2019 in U.S. Appl. No. 14/793,323. |
USPTO; Notice of Allowance dated Nov. 14, 2019 in U.S. Appl. No. 29/646,377. |
USPTO; Notice of Allowance dated Nov. 15, 2018 in U.S. Appl. No. 15/499,647. |
USPTO; Notice of Allowance dated Nov. 17, 2011 in U.S. Appl. No. 12/436,315. |
USPTO; Notice of Allowance dated Nov. 17, 2015 in U.S. Appl. No. 14/031,982. |
USPTO; Notice of Allowance dated Nov. 19, 2018 in U.S. Appl. No. 14/656,588. |
USPTO; Notice of Allowance dated Nov. 19, 2018 in U.S. Appl. No. 14/919,536. |
USPTO; Notice of Allowance dated Nov. 21, 2016 in U.S. Appl. No. 14/981,434. |
USPTO; Notice of Allowance dated Nov. 22, 2016 in U.S. Appl. No. 14/659,152. |
USPTO; Notice of Allowance dated Nov. 23, 2020 in U.S. Appl. No. 29/726,623. |
USPTO; Notice of Allowance dated Nov. 25, 2016 in U.S. Appl. No. 13/791,246. |
USPTO; Notice of Allowance dated Nov. 26, 2014 in U.S. Appl. No. 29/481,301. |
USPTO; Notice of Allowance dated Nov. 26, 2019 in U.S. Appl. No. 16/024,390. |
USPTO; Notice of Allowance dated Nov. 28, 2012 in U.S. Appl. No. 12/436,300. |
USPTO; Notice of Allowance dated Nov. 28, 2016 in U.S. Appl. No. 14/449,838. |
USPTO; Notice of Allowance dated Nov. 3, 2014 in U.S. Appl. No. 13/565,564. |
USPTO; Notice of Allowance dated Nov. 3, 2020 in U.S. Appl. No. 14/508,489. |
USPTO; Notice of Allowance dated Nov. 3, 2020 in U.S. Appl. No. 16/137,974. |
USPTO; Notice of Allowance dated Nov. 30, 2018 in U.S. Appl. No. 15/472,750. |
USPTO; Notice of Allowance dated Nov. 7, 2019 in U.S. Appl. No. 15/660,797. |
USPTO; Notice of Allowance dated Nov. 7, 2019 in U.S. Appl. No. 15/707,786. |
USPTO; Notice of Allowance dated Nov. 9, 2017 in U.S. Appl. No. 14/938,180. |
USPTO; Notice of Allowance dated Oct. 1, 2010 in U.S. Appl. No. 12/467,017. |
USPTO; Notice of Allowance dated Oct. 11, 2017 in U.S. Appl. No. 15/380,895. |
USPTO; Notice of Allowance dated Oct. 12, 2012 in U.S. Appl. No. 12/832,739. |
USPTO; Notice of Allowance dated Oct. 14, 2020 in U.S. Appl. No. 15/974,988. |
USPTO; Notice of Allowance dated Oct. 14, 2021 in U.S. Appl. No. 17/024,092. |
USPTO; Notice of Allowance dated Oct. 15, 2015 in U.S. Appl. No. 14/563,044. |
USPTO; Notice of Allowance dated Oct. 15, 2021 in U.S. Appl. No. 16/240,392. |
USPTO; Notice of Allowance dated Oct. 16, 2017 in U.S. Appl. No. 15/205,890. |
USPTO; Notice of Allowance dated Oct. 16, 2020 in U.S. Appl. No. 15/589,861. |
USPTO; Notice of Allowance dated Oct. 18, 2021 in U.S. Appl. No. 16/601,593. |
USPTO; Notice of Allowance dated Oct. 19, 2016 in U.S. Appl. No. 13/791,246. |
USPTO; Notice of Allowance dated Oct. 19, 2021 in U.S. Appl. No. 16/792,058. |
USPTO; Notice of Allowance dated Oct. 2, 2013 in U.S. Appl. No. 29/412,887. |
USPTO; Notice of Allowance dated Oct. 2, 2017 in U.S. Appl. No. 14/660,755. |
USPTO; Notice of Allowance dated Oct. 20, 2016 in U.S. Appl. No. 14/050,150. |
USPTO; Notice of Allowance dated Oct. 20, 2017 in U.S. Appl. No. 14/884,695. |
USPTO; Notice of Allowance dated Oct. 21, 2015 in U.S. Appl. No. 13/760,160. |
USPTO; Notice of Allowance dated Oct. 21, 2020 in U.S. Appl. No. 15/798,201. |
USPTO; Notice of Allowance dated Oct. 23, 2014 in U.S. Appl. No. 13/535,214. |
USPTO; Notice of Allowance dated Oct. 24, 2012 in U.S. Appl. No. 13/030,438. |
USPTO; Notice of Allowance dated Oct. 26, 2020 in U.S. Appl. No. 15/802,154. |
USPTO; Notice of Allowance dated Oct. 3, 2017 in U.S. Appl. No. 14/465,252. |
USPTO; Notice of Allowance dated Oct. 3, 2018 in U.S. Appl. No. 13/941,226. |
USPTO; Notice of Allowance dated Oct. 3, 2019 in U.S. Appl. No. 16/200,100. |
USPTO; Notice of Allowance dated Oct. 30, 2019 in U.S. Appl. No. 29/604,101. |
USPTO; Notice of Allowance dated Oct. 31, 2014 in U.S. Appl. No. 13/799,708. |
USPTO; Notice of Allowance dated Oct. 4, 2010 in U.S. Appl. No. 12/121,085. |
USPTO; Notice of Allowance dated Oct. 4, 2018 in U.S. Appl. No. 14/919,536. |
USPTO; Notice of Allowance dated Oct. 4, 2021 in U.S. Appl. No. 17/028,066. |
USPTO; Notice of Allowance dated Oct. 5, 2017 in U.S. Appl. No. 14/798,136. |
USPTO; Notice of Allowance dated Oct. 6, 2015 in U.S. Appl. No. 13/411,271. |
USPTO; Notice of Allowance dated Oct. 6, 2017 in U.S. Appl. No. 15/450,199. |
USPTO; Notice of Allowance dated Oct. 7, 2015 in U.S. Appl. No. 13/973,777. |
USPTO; Notice of Allowance dated Oct. 7, 2019 in U.S. Appl. No. 15/489,453. |
USPTO; Notice of Allowance dated Oct. 9, 2013 in U.S. Appl. No. 12/618,419. |
USPTO; Notice of Allowance dated Sep. 10, 2007 in U.S. Appl. No. 10/932,633. |
USPTO; Notice of Allowance dated Sep. 11, 2013 in U.S. Appl. No. 13/250,721. |
USPTO; Notice of Allowance dated Sep. 11, 2015 in U.S. Appl. No. 14/040,196. |
USPTO; Notice of Allowance dated Sep. 11, 2019 in U.S. Appl. No. 15/598,169. |
USPTO; Notice of Allowance dated Sep. 13, 2012 in U.S. Appl. No. 13/085,698. |
USPTO; Notice of Allowance dated Sep. 13, 2013 in U.S. Appl. No. 13/566,069. |
USPTO; Notice of Allowance dated Sep. 13, 2016 in U.S. Appl. No. 13/941,216. |
USPTO; Notice of Allowance dated Sep. 13, 2021 in U.S. Appl. No. 16/206,589. |
USPTO; Notice of Allowance dated Sep. 14, 2018 in U.S. Appl. No. 15/135,333. |
USPTO; Notice of Allowance dated Sep. 14, 2020 in U.S. Appl. No. 16/100,012. |
USPTO; Notice of Allowance dated Sep. 15, 2014 in U.S. Appl. No. 13/333,420. |
USPTO; Notice of Allowance dated Sep. 15, 2016 in U.S. Appl. No. 15/055,122. |
USPTO; Notice of Allowance dated Sep. 15, 2021 in U.S. Appl. No. 15/835,328. |
USPTO; Notice of Allowance dated Sep. 16, 2020 in U.S. Appl. No. 16/598,768. |
USPTO; Notice of Allowance dated Sep. 17, 2014 in U.S. Appl. No. 13/102,980. |
USPTO; Notice of Allowance dated Sep. 17, 2021 in U.S. Appl. No. 16/151,074. |
USPTO; Notice of Allowance dated Sep. 18, 2020 in U.S. Appl. No. 16/454,063. |
USPTO; Notice of Allowance dated Sep. 2, 2010 in U.S. Appl. No. 12/489,252. |
USPTO; Notice of Allowance dated Sep. 20, 2017 in U.S. Appl. No. 15/203,632. |
USPTO; Notice of Allowance dated Sep. 21, 2021 in U.S. Appl. No. 29/702,865. |
USPTO; Notice of Allowance dated Sep. 22, 2021 in U.S. Appl. No. 16/935,280. |
USPTO; Notice of Allowance dated Sep. 23, 2019 in U.S. Appl. No. 15/886,225. |
USPTO; Notice of Allowance dated Sep. 23, 2020 in U.S. Appl. No. 16/242,829. |
USPTO; Notice of Allowance dated Sep. 24, 2018 in U.S. Appl. No. 14/218,690. |
USPTO; Notice of Allowance dated Sep. 27, 2013 in U.S. Appl. No. 13/563,274. |
USPTO; Notice of Allowance dated Sep. 27, 2017 in U.S. Appl. No. 15/222,715. |
USPTO; Notice of Allowance dated Sep. 27, 2021 in U.S. Appl. No. 16/792,571. |
USPTO; Notice of Allowance dated Sep. 28, 2021 in U.S. Appl. No. 15/940,729. |
USPTO; Notice of Allowance dated Sep. 3, 2015 in U.S. Appl. No. 14/166,462. |
USPTO; Notice of Allowance dated Sep. 3, 2020 in U.S. Appl. No. 14/444,744. |
USPTO; Notice of Allowance dated Sep. 30, 2013 in U.S. Appl. No. 13/094,402. |
USPTO; Notice of Allowance dated Sep. 30, 2020 in U.S. Appl. No. 15/815,483. |
USPTO; Notice of Allowance dated Sep. 30, 2021 in U.S. Appl. No. 16/563,473. |
USPTO; Notice of Allowance Mar. 13, 2015 dated in U.S. Appl. No. 13/749,878. |
USPTO; Notice ofAllowance dated Jun. 8, 2021 in U.S. Appl. No. 29/696,472. |
USPTO; Office Action dated Apr. 23, 2013 in U.S. Appl. No. 12/763,037. |
USPTO; Office Action dated Apr. 23, 2014 in U.S. Appl. No. 13/784,362. |
USPTO; Office Action dated Aug. 29, 2013 in U.S. Appl. No. 13/339,609. |
USPTO; Office Action dated Aug. 30, 2013 in U.S. Appl. No. 12/854,818. |
USPTO; Office Action dated Aug. 30, 2018 in U.S. Appl. No. 15/589,849. |
USPTO; Office Action dated Dec. 6, 2012 in U.S. Appl. No. 12/854,818. |
USPTO; Office Action dated Feb. 11, 2013 in U.S. Appl. No. 13/339,609. |
USPTO; Office Action dated Feb. 15, 2011 in U.S. Appl. No. 12/118,596. |
USPTO; Office Action dated Feb. 25, 2014 in U.S. Appl. No. 12/754,223. |
USPTO; Office Action dated Feb. 26, 2013 in U.S. Appl. No. 12/754,223. |
USPTO; Office Action dated Feb. 4, 2014 in U.S. Appl. No. 13/439,528. |
USPTO; Office Action dated Jun. 2, 2014 in U.S. Appl. No. 13/677,151. |
USPTO; Office Action dated Jun. 3, 2014 in U.S. Appl. No. 12/854,818. |
USPTO; Office Action dated May 29, 2014 in U.S. Appl. No. 14/183,187. |
USPTO; Office Action dated May 3, 2018 in U.S. Appl. No. 15/589,861. |
USPTO; Office Action dated Oct. 7, 2013 in U.S. Appl. No. 13/102,980. |
USPTO; Office Action dated Oct. 8, 2014 in U.S. Appl. No. 12/763,037. |
USPTO; Patent Board Decision dated Sep. 23, 2019 in U.S. Appl. No. 13/187,300. |
USTPO; Non-Final Office Action dated Jul. 2, 2018 in U.S. Appl. No. 15/286,503. |
Vallat et al. "Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme" Journal of Vacuum Science & Technology A 37(2), 12 pages (2019). |
Vallat et al. "Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps" Journal of Vacuum Science & Technology A 35(1), 7 pages (2016). |
Van Asselt et al. "New Palladium Complexes of Cis-Fixed Bidentate Nitrogen Ligands as Catalysts for Carbon-Carbon Bond Formation" Organometallics, 11, pp. 1999-2001 (1992). |
Van Asselt et al. "On the Mechanism of Formation of Homocoupled Products in the Carbon-Carbon Cross-Coupling Reaction Catalyzed by Palladium Complexes Containing Rigid Bidentate Nitrogen Ligands" Organometallics, 13, pp. 1972-1980 (1994). |
Varma, et al., "Effect of Metal Halides on Thermal, Mechanical, and Electrical Properties of Polypyromelitimide Films," Journal of Applied Polymer Science, vol. 32, pp. 3987-4000, (1986). |
Vasilev, "Borophosphosilicate Glass Films in Silicon Microelectronics, Part 1: Chemical Vapor Deposition, Composition, and Properties" Russian Microelectronics, vol. 3 3, No. 5, pp. 271-284 (2004). |
Vayrynen et al. "Atomic Layer Deposition of Nickel Nitride Thin Films Using NiCL2 (TMPDA) and Tert-Butylhydrazine as Precursors" Phy. Status Solidi A, 216, 9 pages (2019). |
Vayrynen et al. "Photo-Assisted Atomic Layer Deposition and Chemical Vapor Deposition of Metal and Metal Oxide Thin Films" Thesis, Oct. 2015, 146 pages (2005). |
Venkatesan et al. "A rugged lead-ruthenate pyrochlore membrane catalyst for highly seelctive oxidation of alcohols" J. Molecular Catalysis A: Chemical 250, pp. 87-93 (2006). |
Vesters et al. "Sensitizers in EUV Chemically Amplified Resist: Mechanism of sensitivity improvement" Proc. SPIE 10583 Extreme Ultraviolet (EUV) Lithography IX, 1058307, 11 pages (2018). |
Voltaix, "Meterial Safety Data Sheet for: Trisilylamine", pp. 1-8, (2014). |
Wang et al., "Tritertiarybutylaluminum as an Organometallic Source for Epitaxial Growth of AlGaSb," Appl. Phys. Lett. 67 (10), Sep. 4, pp. 1384-1386, American Institute of Physics (1995). |
Wilklow-Marnell et al. "First-row transitional-metal oxalate resists for EUV" J. Micro/Nanolith. Mems Moems 17(4) Oct.-Dec. 2018, 9 pages (2018). |
WIPO: International Search Report and Written Opinion dated Jun. 1, 2018 in Application No. PCT/IB2017/001644. |
WIPO: International Search Report and Written Opinion dated Jun. 1, 2018 in Application No. PCT/IB2017/001656. |
WIPO; International Preliminary Examination Report dated Feb. 24, 1999 in Application No. PCT/NL1998/000055. |
WIPO; International Preliminary Examination Report dated Jan. 22, 2001 in Application No. PCT/NL1999/000583. |
WIPO; International Preliminary Examination Report dated Jul. 13, 1999 in Application No. PCT/NL1998/000167. |
WIPO; International Preliminary Examination Report dated Jun. 29, 2001 in Application No. PCT/RU1999/000328. |
WIPO; International Preliminary Examination Report dated Mar. 23, 1999 in Application No. PCT/NL1998/000151. |
WIPO; International Preliminary Examination Report dated Oct. 2, 1998 in Application No. PCT/NL1997/000398. |
WIPO; International Preliminary Examination Report dated Sep. 16, 1999 in Application No. PCT/NL1998/000383. |
WIPO; International Preliminary Report on Patentability dated Feb. 24, 2010 in Application No. PCT/US2008/074063. |
WIPO; International Preliminary Report on Patentability dated Jun. 14, 2011 in Application No. PCT/US2009/066377. |
WIPO; International Preliminary Report on Patentability dated Nov. 24, 2009 and International Search Report dated Jul. 31, 2008 in Application No. PCT/US2008/063919. |
WIPO; International Preliminary Report on Patentability dated Nov. 26, 2009 in Application No. PCT/US2009/043454. |
WIPO; International Preliminary Report on Patentability dated Nov. 9, 2011 in Application No. PCT/US2010/033244. |
WIPO; International Preliminary Report on Patentability dated Nov. 9, 2011 in Application No. PCT/US2010/033248. |
WIPO; International Preliminary Report on Patentability dated Nov. 9, 2011 in Application No. PCT/US2010/033252. |
WIPO; International Preliminary Report on Patentability dated Oct. 11, 2011 Application No. PCT/US2010/030126. |
WIPO; International Search Report and Written Opinion dated Apr. 17, 2019 in Application No. PCT/NL2018/050787. |
WIPO; International Search Report and Written Opinion dated Apr. 29, 2019 in Application No. PCT/NL2018/050791. |
WIPO; International Search Report and Written Opinion dated Dec. 20, 2018 in Application No. PCT/IB2018/001003. |
WIPO; International Search Report and Written Opinion dated Dec. 20, 2018 in Application No. PCT/IB2018/001022. |
WIPO; International Search Report and Written Opinion dated Dec. 20, 2019 in Application No. PCT/IB2019/000805. |
WIPO; International Search Report and Written Opinion dated Dec. 20, 2019 in Application No. PCT/IB2019/000817. |
WIPO; International Search report and Written Opinion dated Feb. 13, 2013 in Application No. PCT/US2012/065347. |
WIPO; International Search report and Written Opinion dated Feb. 6, 2013 in Application No. PCT/US2012/065343. |
WIPO; International Search Report and Written Opinion dated Jan. 10, 2020 in Application No. PCT/IB2019/000729. |
WIPO; International Search report and Written Opinion dated Jan. 20, 2011 in Application No. PCT/US2010/045368. |
WIPO; International Search Report and Written Opinion dated Jan. 25, 2018 in Application No. PCT/IB2017/001262. |
WIPO; International Search Report and Written Opinion dated Jan. 25, 2019 in Application No. PCT/IB2018/000192. |
WIPO; International Search Report and Written Opinion dated Jan. 4, 2019 in Application No. PCT/IB2018/000936. |
WIPO; International Search Report and Written Opinion dated Jul. 9, 2018 in Application No. PCT/IB2018/000419. |
WIPO; International Search Report and Written Opinion dated Jun. 28, 2019 in Application No. PCT/IB2019/000084. |
WIPO; International Search Report and Written Opinion dated May 23, 2019 in Application No. PCT/IB2019/050974. |
WIPO; International Search report and Written Opinion dated Nov. 12, 2010 in Application No. PCT/US2010/030126. |
WIPO; International Search Report and Written Opinion dated Nov. 13, 2017 in Application No. PCT/IB2017/001050. |
WIPO; International Search Report and Written Opinion dated Nov. 16, 2017 in Application No. PCT/IB2017/001015. |
WIPO; International Search Report and Written Opinion dated Nov. 19, 2019 in Application No. PCT/IB2019/000127. |
WIPO; International Search Report and Written Opinion dated Nov. 30, 2017 in Application No. PCT/IB2017/001070. |
WIPO; International Search Report and Written Opinion dated Nov. 6, 2018 in Application No. PCT/IB2017/001652. |
WIPO; International Search Report and Written Opinion dated Sep. 14, 2018 in Application No. PCT/IB2017/001640. |
WIPO; International Search Report dated Apr. 15, 1999 in Application No. PCT/NL1999/000047. |
WIPO; International Search Report dated Apr. 19, 2000 in Application No. PCT/NL2000/000020. |
WIPO; International Search Report dated Apr. 24, 1998 in Application No. PCT/NL1998/000055. |
WIPO; International Search Report dated Aug. 21, 1998 in Application No. PCT/NL1998/000246. |
WIPO; International Search Report dated Dec. 16, 1999 in Application No. PCT/NL1999/000583. |
WIPO; International Search Report dated Dec. 16, 1999 in Application No. PCT/RU1999/000328. |
WIPO; International Search Report dated Feb. 26, 1991 in Application No. PCT/NL1990/000166. |
WIPO; International Search Report dated Jan. 11, 1990 in Application No. PCT/NL1990/000042. |
WIPO; International Search Report dated Jul. 13, 1990 in Application No. PCT/NL1990/000027. |
WIPO; International Search Report dated Jul. 8, 1998 in Application No. PCT/NL1998/000204. |
WIPO; International Search Report dated May 27, 1998 in Application No. PCT/NL1998/000105. |
WIPO; International Search Report dated May 27, 1998 in Application No. PCT/NL1998/000167. |
WIPO; International Search Report dated May 8, 1998 in Application No. PCT/NL1998/000151. |
WIPO; International Search Report dated Oct. 12, 1999 in Application No. PCT/NL1999/000487. |
WIPO; International Search Report dated Oct. 13, 1998 in Application No. PCT/FI1998/000571. |
WIPO; International Search Report dated Oct. 16, 1998 in Application No. PCT/NL1998/000383. |
WIPO; International Search Report dated Oct. 17, 1997 in Application No. PCT/NL1997/000398. |
WIPO; International Search Report dated Oct. 25, 1991 in Application No. PCT/NL1991/000108. |
WIPO; Written Opinion dated Jul. 24, 2000 in Application No. PCT/NL1999/000583. |
WIPO; Written Opinion dated Oct. 17, 2000 in Application No. PCT/NL2000/000020. |
Wirths et al. "Low temperature RPCVD epitaxial growth of SilxGex using Si2H6 and Ge2H6" Solid-State Electronics, 88, pp. 2-9 (2013). |
Wirths, et al., "SiGeSn Growth Indies Using Reduced Pressure Chemical Vapor Deposition Towards Optoeleconic Applications," This Soid Films, 557, 183-187 (2014). |
Xiao "Introduction to Semiconductor Manufacturing Technology" SPIE Press, ISBN 978-0-08194-9092-6, pp. 237-245 (2012). |
Xing et al., "Ising Superconductivity and Quantum Phase Transition in Macro-Size Monolayer NbSe2" Nano. Lett. 17, pp. 6802-6807 (2017). |
Xu et al., "14NM Metal Gate Film Stack Development and Challenges," SMIC et al. (2016). |
Xu et al., "Contacts between Two- and Three- Dimensional Materials: Ochmic, Schottky, and p-n Heterojunctions" ACS Nano 10, pp. 4895-4919 (2016). |
Yanguas-Gil et al. "Modulation of the Growth Per Cycle in Atomic Layer Deposition Using Reversible Surface Functionalization" Chemistry of Materials, 25, pp. 4849-4860 (2013). |
Yoshida, et al., Threshold Voltage Tuning for 10NM and Beyond CMOS Integration, Solid State Technology, 57(7): 23-25 (2014). |
Yu et al., "Modulation of the Ni FUSI Workfunction by Yb Doping: from Midgap to N-Type Band-Edge," 4 pages, IEEE 0-7803-9269-8/05 (2005). |
Yuan et al. "A Bifunctional Air Electrode Catalyzed by Lead Ruthenate for Li-Air Batteries" ECS Transactions 69(19), pp. 23-32 (2015). |
Yuan et al., "Facile Synthesis of Single Crystal Vanadium Disulfide Nanosheets by Chemical Vapor Deposition for Efficient Hydrogen Evolution Reaction" Adv. Mater. 27, pp. 5605-5609 (2015). |
Yun et al., "Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films," Solid State Phenomena, vol. 124-126, 347-350 (2007). |
Yun et al., "Comparison of Atomic Scale Etching of Poly-Si in Inductively Coupled Ar and He Plasmas", Korean Journal of Chemical Engineering, vol. 24, 670-673 (2007). |
Yun et al., "Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition," Electrochemical and Solid State Letters, 8(11) F47-F50 (2005). |
Yun et al., "Single-Crystalline Si Stacked Array (Star) Nand Flash Memory," IEEE Transactions on Electron Devices, vol. 58, No. 4, 1006-1014 (2011). |
Yushin et al., "Carbon-Derived Carbon," Department of Materials Science and Engineering, Taylor & Francis Group, LLC (2006). |
Zhang et al. "Mechanical Stability of Air-gap Interconnects" Proc. Future Fab International, pp. 81-87 (2008). |
Zhao et al. "Surface Chemistry of Thermal Dry Etching of Cobalt Thin Films Using Hexafluoroacetylacetone (hfacH)" Appl Surf Sci. 455, pp. 438-445 (2018). |
Zhao et al. "Thermal and Plasma-Enhanced Atomic Layer Deposition of Yttrium Oxide Films and the Properties of Water Wettability" Appl. Mater. Interfac. 12(2), 9 pages (2019). |
Zhou et al., "A library of atomically thin metal chalcogenides" Nature 556, pp. 355-361 (2018). |
Zientara et al. Journal of the European Ceramic Society, 27, Abstract, 1 page (2007). |
Also Published As
Publication number | Publication date |
---|---|
TWD215535S (en) | 2021-11-21 |
JP1692231S (en) | 2021-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USD921433S1 (en) | Cup with lid and base | |
USD973440S1 (en) | Bottle | |
USD897285S1 (en) | Charger | |
USD958917S1 (en) | Miniature golf course | |
USD929640S1 (en) | Light fixture | |
USD959787S1 (en) | Graham cracker | |
USD945082S1 (en) | Mat for bowls | |
USD974002S1 (en) | Glove upper | |
USD915897S1 (en) | Heart shaped container | |
USD995346S1 (en) | Ring | |
USD945272S1 (en) | Bottle | |
USD956931S1 (en) | Faucet | |
USD978014S1 (en) | Round shaped gemstone with 10 hearts and 10 arrows | |
USD953795S1 (en) | Blender | |
USD953924S1 (en) | Gemstone | |
USD907977S1 (en) | Tab opener | |
USD990534S1 (en) | Weighted lift pin | |
USD852247S1 (en) | Actuator | |
USD964321S1 (en) | Waveguide | |
USD997773S1 (en) | Gemstone | |
USD993227S1 (en) | Antenna | |
USD1005271S1 (en) | Antenna | |
USD936497S1 (en) | Level | |
USD936499S1 (en) | Level | |
USD906160S1 (en) | Gemstone |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |