US20030145789A1 - Gas supply device for precursors with a low vapor pressure - Google Patents

Gas supply device for precursors with a low vapor pressure Download PDF

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US20030145789A1
US20030145789A1 US10/203,191 US20319102A US2003145789A1 US 20030145789 A1 US20030145789 A1 US 20030145789A1 US 20319102 A US20319102 A US 20319102A US 2003145789 A1 US2003145789 A1 US 2003145789A1
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gas
intermediate storage
storage device
precursor
gas supply
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Hartmut Bauch
Lars Bewig
Lutz Klippe
Thomas Kupper
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Schott AG
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Schott Glaswerke AG
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Publication of US20030145789A1 publication Critical patent/US20030145789A1/en
Priority to US11/014,488 priority Critical patent/US7413767B2/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

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  • the invention relates to a gas supply device for precursors with a low vapor pressure, especially for CVD coating systems according to the characterizing portion of claim 1.
  • CVD coating systems chemical vapor deposition
  • the coatings which may also consist of a series of different thin layers, must satisfy very high requirements with regard to their properties.
  • the deposition In order to achieve such properties the deposition must also be of very high quality. This includes the deposition rate as a deposition parameter, for example, which has a considerable effect on the coating quality.
  • the deposition rate is fundamentally determined by the partial pressure of a gaseous precursor. Therefore, the partial pressure must be set very precisely and must not fluctuate.
  • Special coating materials are used for coating which are delivered to the coater via selected precursors.
  • Precursors used for producing TiO 2 /SiO 2 alternating coatings are titanium tetrachloride (TiCl 4 ) or hexamethyl disiloxane (HDMSO), for example, which, under normal conditions, have a low vapor pressure far below the atmospheric pressure. Such a low vapor pressure is usually too low for an adequate deposition rate required for industrial coating. Therefore, the precursors must be heated up to a first evaporation temperature in a supply container so as to generate an adequate vapor pressure.
  • the gas supply device In order to prevent the precursor from condensing on the way to the coater, the gas supply device must then be heated between the supply container and the coater to a second temperature, which is higher than the first evaporation temperature.
  • Nb 2 O 2 /SiO 2 alternating coatings can also be produced offering the advantage that they tend less toward crystallization. Moreover, NbO 2 can be deposited at higher deposition rates. Additionally, the coefficient of expansion of Nb 2 O 5 is more suitable to that of SiO 2 than the coefficient of expansion of TiO 2 , so that thicker alternating coatings can be produced with Nb 2 O 5 . However, for the production of Nb 2 O 5 coatings only precursors with comparatively low vapor pressure are available whose vapor pressure under normal conditions is even far below the vapor pressure of the HMDSO and TiCl 4 precursors.
  • NbCl 5 A commercially available Nb compound with the highest vapor pressure, NbCl 5 , will not have a pressure of 50 mbar until a temperature of approx. 170° C. is reached.
  • the temperature dependence of the vapor pressure of NbCl 5 is illustrated in the bottom curve in FIG. 1. Therefore, a gas supply device for uniformly supplying a PICVD coating system with NbCl 5 vapor would have to be maintained at said temperature.
  • a gas supply device for providing precursors with a low vapor pressure with a supply container for a precursor and an intermediate storage device for buffering and mixing the vaporous precursor with other gases is known (JP 2-25 09 77 A2).
  • the supply container is thermostatted to a first temperature T 1 and the intermediate storage device is thermostatted to a second temperature T 2 where the first temperature T 1 is lower than the second temperature T 2 so as to prevent condensation of the precursor in the intermediate storage device.
  • a carrier gas is delivered to the supply container which transports the precursor to the intermediate storage device and from there to a reaction chamber.
  • the gas supply device can be provided with a second supply container from which a second precursor is delivered to the intermediate storage device by means of a carrier gas so as to mix the two precursors and the carrier gas.
  • the intermediate storage device and the equipment connected to the intermediate storage device must be maintained at the high temperature T 2 , which makes maintenance work time-consuming because of the required cooling down period, and the materials and equipment must be able to withstand the high temperature T 2 .
  • the aim of the invention is to develop a gas supply device for a precursor with a low vapor pressure such that maintenance and repair work on an intermediate storage device can be completed easily and quickly and using cost-effective components for the intermediate storage device and its elements without having to limit the maximum achievable mass flow rate of the precursor.
  • a gas supply device of the invention for precursors with a low vapor pressure has a supply container for storing a first precursor with a low vapor pressure, an intermediate storage device for intermediate storage of the first precursor evaporated in the supply container, a first gas line connecting the supply container to the intermediate storage device, and a second gas line for removing the gas from the intermediate storage device.
  • the gas supply device is also called a gas generator.
  • the gas removed via the second gas line on the intermediate storage device serves to supply the coaters with the gaseous first precursor.
  • Coaters are especially CVD coating systems or the like.
  • Precursors are also frequently called educt species, starting materials or coating material.
  • Precursors with a low vapor pressure should be understood to mean solid or liquid coating compounds with a vapor pressure of less than 10 mbar at temperatures of 50° C., for example.
  • the evaporation rate of the first precursor in the supply container depends on the temperature T 1 and on the partial pressure of the first precursor in the supply container.
  • the evaporation rate increases as the temperature rises. If the vaporous precursor is now removed for the intermediate storage device the precursor is very quickly replaced because of the evaporation.
  • the saturation vapor pressure of the precursor is virtually maintained. Because the saturation vapor pressure depends very highly on the temperature (see FIG. 2) a minor change in the temperature T 1 can achieve a significant change in the pressure p 1 .
  • a valve for example, for adjusting the mass flow between the intermediate storage device and the supply container, its conductance can be set such that the mass flow through the valve is affected only by the pressure p 1 on the inlet side and that it is independent of the pressure p 2 on the outlet side (locking conditions).
  • the pressure p 1 is preferably twice as high as the pressure p 2 .
  • the first metering device is advantageously a controllable mass flow controller so that on the one hand, control is possible via a control unit or a regulator, and on the other hand, the mass flow flowing between the supply container and the intermediate storage device can be measured.
  • gas is discharged via a second metering device from the intermediate storage device to a gas outlet.
  • gas can be discharged continuously from the intermediate storage device.
  • the second metering device can be adjusted such that when the pressure p 2 is exceeded gas can be discharged from the intermediate storage device so as to maintain a constant pressure in the intermediate storage device.
  • the outlet can also be used for evacuating and purging the intermediate storage device.
  • the second metering device can be a flow control valve, where the cross-section can be adjusted for discharging the gas.
  • a carrier gas is delivered into the first gas line between the supply container and the intermediate storage device.
  • the carrier gas can be an inert gas, a second precursor or a gas mix with a second precursor.
  • Carrier gases are used in CVD processes for transporting the precursors more rapidly to the object to be coated and for removing reaction products or impurities from there. Therefore, the carrier gas transports the first precursor faster through the gas supply device, and mixing the first precursor with the carrier gas has the additional advantageous effect that as a result of diluting the first precursor its partial pressure in the intermediate storage device is lower than the total pressure p 2 in the intermediate storage device.
  • the temperature T 2 is restricted by the lower limit at which the temperature-dependent saturation vapor pressure is higher than the partial pressure of the first precursor in the intermediate storage device, which prevents condensation.
  • TaCl 5 or a Ta alcoholate can preferably be used.
  • TIPT titanium isopropylate
  • AICl 3 can preferably be used.
  • the first mass flow controller 6 is used for measuring the mass flow from the supply container 2 to the intermediate storage device 4 and for adjusting the mass flow rate to a specified value.
  • first mass flow controller 6 and the intermediate storage device 4 another line enters the first gas line 3 .
  • a second mass flow controller 9 is disposed.
  • a carrier gas or another reaction gas in the present case oxygen (O 2 )
  • O 2 oxygen
  • the NbCl 5 precursor is then mixed with the carrier gas and delivered to the intermediate storage device 4 .
  • oxygen is supplied through the second mass flow controller 9 into the first gas line 3 .
  • Appropriate control of the mass flow controllers 6 and 9 achieves that the second mass flow controller 9 delivers a mass flow of oxygen proportional to the first mass flow controller 6 .
  • the mass flow of the oxygen is 19 times higher than the mass flow of NbCl 5 , resulting in a mixing ratio of 5% NbCl 5 gas and 95% oxygen in the intermediate storage device 4 .
  • the intermediate storage device is maintained at a total pressure of 40 mbar.
  • the partial pressure of the NbCl 5 in the intermediate storage device is approx. 2 mbar, which is clearly below the saturation vapor pressure of 4 mbar at 120° C. (see FIG. 1) and which prevents condensation of NbCl 5 .
  • the pressure p 2 in the intermediate storage device 4 is controlled by means of the flow control valve 15 .
  • the mass flow controllers are set for constant flow rates.
  • the pressure p 2 is controlled via a variable control of the mass flow rates of the mass flow controllers 6 , 9 at a constant ratio.
  • the mass flow through the first metering valve depends solely on its conductance and the pressure p 2 in the intermediate storage device 4 and it is independent of the pressure in the gas exchange station 11 . Therefore, in order to obtain a constant mass flow from the intermediate storage device 4 to the gas exchange station 11 and continuing to the deposition system 14 , it is not necessary to provide another mass flow controller because the mass flow rate is determined via the constant pressure p 2 and the conductance setting of the first metering valve.
  • the functional method of the two gas supply devices 19 , 20 ; 19 ′, 20 ′ substantially corresponds to the gas supply device 1 of FIG. 2 with the difference that the temperature T 1 of the supply area 19 and the temperature T 2 of the intermediate storage area 20 are optimized for the temperature dependence of the precursor in the supply container 2 , and the temperature T 4 in the supply area 19 ′ and the temperature T 5 in the intermediate storage area 20 ′ are optimized for the temperature-dependent course of the vapor pressure of the second precursor in the supply container 2 ′.

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Abstract

The invention relates to a gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. Said gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. According to the invention, the gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. According to a particularly advantageous embodiment, a first precursor vapor is mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor in the intermediate storage device is lower than that of the undiluted first precursor vapor at a constant overall pressure in said intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced. Reducing the temperature T2 allows less expensive components to be used.

Description

  • The invention relates to a gas supply device for precursors with a low vapor pressure, especially for CVD coating systems according to the characterizing portion of [0001] claim 1.
  • In modern CVD coating systems (chemical vapor deposition), more and more specialized coatings are applied to components or substrates. The coatings, which may also consist of a series of different thin layers, must satisfy very high requirements with regard to their properties. In order to achieve such properties the deposition must also be of very high quality. This includes the deposition rate as a deposition parameter, for example, which has a considerable effect on the coating quality. In CVD deposition, the deposition rate is fundamentally determined by the partial pressure of a gaseous precursor. Therefore, the partial pressure must be set very precisely and must not fluctuate. [0002]
  • Special coating materials are used for coating which are delivered to the coater via selected precursors. Precursors used for producing TiO[0003] 2/SiO2 alternating coatings are titanium tetrachloride (TiCl4) or hexamethyl disiloxane (HDMSO), for example, which, under normal conditions, have a low vapor pressure far below the atmospheric pressure. Such a low vapor pressure is usually too low for an adequate deposition rate required for industrial coating. Therefore, the precursors must be heated up to a first evaporation temperature in a supply container so as to generate an adequate vapor pressure.
  • In order to prevent the precursor from condensing on the way to the coater, the gas supply device must then be heated between the supply container and the coater to a second temperature, which is higher than the first evaporation temperature. [0004]
  • It is also known to intermediately store the precursors or the TiCl[0005] 4 and hexamethyl disiloxane coating materials in an intermediate storage device at a vapor pressure of approx. 50 mbar or greater so as to achieve an adequate mass flow rate through the following valves, mass flow controllers and tube systems. In order to obtain such a partial pressure, the intermediate storage device is heated up to at least 50° C. for TiCl4 and 30° C. for hexamethyl disiloxane.
  • Furthermore, Nb[0006] 2O2/SiO2 alternating coatings can also be produced offering the advantage that they tend less toward crystallization. Moreover, NbO2 can be deposited at higher deposition rates. Additionally, the coefficient of expansion of Nb2O5 is more suitable to that of SiO2 than the coefficient of expansion of TiO2, so that thicker alternating coatings can be produced with Nb2O5. However, for the production of Nb2O5 coatings only precursors with comparatively low vapor pressure are available whose vapor pressure under normal conditions is even far below the vapor pressure of the HMDSO and TiCl4 precursors. A commercially available Nb compound with the highest vapor pressure, NbCl5, will not have a pressure of 50 mbar until a temperature of approx. 170° C. is reached. The temperature dependence of the vapor pressure of NbCl5 is illustrated in the bottom curve in FIG. 1. Therefore, a gas supply device for uniformly supplying a PICVD coating system with NbCl5 vapor would have to be maintained at said temperature.
  • A gas supply device for providing precursors with a low vapor pressure with a supply container for a precursor and an intermediate storage device for buffering and mixing the vaporous precursor with other gases is known (JP 2-25 09 77 A2). The supply container is thermostatted to a first temperature T[0007] 1 and the intermediate storage device is thermostatted to a second temperature T2 where the first temperature T1 is lower than the second temperature T2 so as to prevent condensation of the precursor in the intermediate storage device. A carrier gas is delivered to the supply container which transports the precursor to the intermediate storage device and from there to a reaction chamber. The gas supply device can be provided with a second supply container from which a second precursor is delivered to the intermediate storage device by means of a carrier gas so as to mix the two precursors and the carrier gas. In this device, the intermediate storage device and the equipment connected to the intermediate storage device must be maintained at the high temperature T2, which makes maintenance work time-consuming because of the required cooling down period, and the materials and equipment must be able to withstand the high temperature T2.
  • A type of gas supply device for precursors with a low vapor pressure, especially for a PICVD coating system, is known where a supply container for the precursor is held at a first temperature (DE 42 36 324 C 1). Also, said gas supply device has an intermediate storage device for intermediate storage of the vaporous precursor, where the intermediate storage device is connected to the supply container via a gas line. The gas with the precursor can be removed from the intermediate storage device for the PICVD coating system. In this gas supply device, the intermediate storage device is maintained at a second temperature which is higher than the first temperature of the supply container. Pressure fluctuations in the gas with the precursor caused by removals of varying mass flow rate into the PICVD coating system are largely compensated by the intermediate storage device. [0008]
  • For repairs or routine maintenance work on the intermediate storage device, however, the intermediate storage device and the equipment connected to said device for supplying and removing the gas have to be cooled, which is very time-consuming. This also requires the use of expensive high-temperature mass flow controllers in the area of the intermediate storage device. Moreover, in continuous removal, the maximum removable precursor mass flow is limited by the evaporation rate of the supply container which is maintained at a lower temperature. [0009]
  • The aim of the invention is to develop a gas supply device for a precursor with a low vapor pressure such that maintenance and repair work on an intermediate storage device can be completed easily and quickly and using cost-effective components for the intermediate storage device and its elements without having to limit the maximum achievable mass flow rate of the precursor. [0010]
  • The problem is solved by means of the features of [0011] claim 1.
  • According to [0012] claim 1, a gas supply device of the invention for precursors with a low vapor pressure has a supply container for storing a first precursor with a low vapor pressure, an intermediate storage device for intermediate storage of the first precursor evaporated in the supply container, a first gas line connecting the supply container to the intermediate storage device, and a second gas line for removing the gas from the intermediate storage device. In this embodiment, the gas supply device is also called a gas generator.
  • The supply container is maintained at a first temperature T[0013] 1. Via the first gas line, the gas enters the intermediate storage device where it is maintained at a second temperature T2. Also, the pressure in the intermediate storage device is held at a constant pressure p2 which is lower than the pressure p1 in the supply container so that the vaporous first precursor flows into the intermediate storage device because of the higher pressure in the supply container. According to the invention, the first temperature T1 in the supply container is higher than the second temperature T2 in the intermediate storage device.
  • The gas removed via the second gas line on the intermediate storage device serves to supply the coaters with the gaseous first precursor. Coaters are especially CVD coating systems or the like. Precursors are also frequently called educt species, starting materials or coating material. Precursors with a low vapor pressure should be understood to mean solid or liquid coating compounds with a vapor pressure of less than 10 mbar at temperatures of 50° C., for example. [0014]
  • A supply container is usually a quartz flask or a high-grade steel container or the like, where the material of the container is resistant to reactions with the precursor. The intermediate storage device can also consist of quartz, high-grade steel or the like. Advantageously, the intermediate storage device is voluminous so as to buffer pressure fluctuations caused by irregular gas removal from the intermediate storage device. The optimal volume of an intermediate storage device is known from DE 42 36 324 C1 whose disclosure content is hereby incorporated. [0015]
  • The maximum removable mass flow from the supply container depends on the pressure p[0016] 1. In normal operation, the gas volume of the supply container is filled with pure precursor vapor so that the pressure p1 is equal to the equilibrium vapor pressure of the precursor, which increases with the temperature T1. The maximum removable precursor mass flow from the intermediate storage device for a coater is limited by the mass flow between the supply container and the intermediate storage device.
  • Consequently, as the temperature T[0017] 1 and thus the pressure p1 increase the maximum usable mass flow for coating can be increased.
  • The evaporation rate of the first precursor in the supply container depends on the temperature T[0018] 1 and on the partial pressure of the first precursor in the supply container. The evaporation rate increases as the temperature rises. If the vaporous precursor is now removed for the intermediate storage device the precursor is very quickly replaced because of the evaporation. In the supply container, the saturation vapor pressure of the precursor is virtually maintained. Because the saturation vapor pressure depends very highly on the temperature (see FIG. 2) a minor change in the temperature T1 can achieve a significant change in the pressure p1.
  • Because the precursor is preferably present only in gaseous form in the intermediate storage device because of the lower pressure p[0019] 2 in the intermediate storage device, the maximum removable mass flow in a suitable temperature interval is not limited by the lower temperature T2 in a suitable temperature interval of the intermediate storage device. Therefore, the setting of the temperature T2 is not dependent on the temperature T1, and the intermediate storage device and the equipment connected to the intermediate storage device have to be heat-resistant only with regard to the lower temperature T2, which allows the use of less expensive components, for example flow rate controllers and valves. For maintenance or repair work in the area of the intermediate storage device, the waiting period until the intermediate storage device and the equipment connected to said device have cooled down is reduced thereby.
  • Also, the lower temperature T[0020] 2 at which the high volume intermediate storage device must be held contributes to saving energy. In contrast, the supply container can be small compared to the intermediate storage device and it can be integrated so as to be heat insulated in the heated area of the intermediate storage device.
  • Advantageously, the temperature T[0021] 2 of the intermediate storage device is set such that the maximum partial pressure of the first precursor in the intermediate storage device is below the saturation vapor pressure of the precursor in the intermediate storage device at the temperature T2. This is to prevent that the first precursor condenses and remains in the intermediate storage device.
  • When the pressure p[0022] 1 is more than 1.5 [times] higher than the pressure p2 in the intermediate storage device, a pressure difference is obtained between the supply container and the intermediate storage device where a locking of a connection between the supply container and the intermediate storage device is achieved. Then, the rate of transportation explicitly depends upon the pressure difference (p1-p2) and the conductance of the tube connection between the supply container and the intermediate storage device. In the limiting case of an ideally locked flow, the maximum mass flow is solely determined by p1 and the cross-section of the line at the locking point (tube end or valve opening, for example).
  • The locking also prevents that the precursor vapor can diffuse from the intermediate storage device back into the supply container. Using a gas mix of the precursor vapor with another gas in the intermediate storage device prevents the precursor from mixing with other gases in the supply container. [0023]
  • If a valve is used, for example, for adjusting the mass flow between the intermediate storage device and the supply container, its conductance can be set such that the mass flow through the valve is affected only by the pressure p[0024] 1 on the inlet side and that it is independent of the pressure p2 on the outlet side (locking conditions). The pressure p1 is preferably twice as high as the pressure p2.
  • According to an advantageous embodiment of the gas supply device, a metering device is provided between the supply container and the intermediate storage device. The metering device is used for setting the mass flow from the supply container to the intermediate storage device. A metering device is usually a nozzle restricting the cross-section of the line, a valve for opening and closing, a metering valve with variable cross-section and the like. The metering device is used to restrict the mass flow from the supply container to the intermediate storage device. The metering device is preferably controlled, for example by means of a controller, in such a way that the mass flow increases when the pressure in the intermediate storage device falls below the constant pressure p[0025] 2, and that the mass flow decreases when the pressure in the intermediate storage device exceeds p2.
  • The first metering device is advantageously a controllable mass flow controller so that on the one hand, control is possible via a control unit or a regulator, and on the other hand, the mass flow flowing between the supply container and the intermediate storage device can be measured. [0026]
  • According to another embodiment of the gas supply device, gas is discharged via a second metering device from the intermediate storage device to a gas outlet. With this arrangement, gas can be discharged continuously from the intermediate storage device. Alternatively, the second metering device can be adjusted such that when the pressure p[0027] 2 is exceeded gas can be discharged from the intermediate storage device so as to maintain a constant pressure in the intermediate storage device. The outlet can also be used for evacuating and purging the intermediate storage device.
  • Advantageously, the second metering device can be a flow control valve, where the cross-section can be adjusted for discharging the gas. [0028]
  • According to another embodiment, the gas outlet is connected to a vacuum pump and/or cold trap. The vacuum pump evacuates the outlet side of the gas outlet to a pressure below the pressure p[0029] 2 of the intermediate storage device so as to generate a pressure difference and allowing a gas discharge. Alternatively, the vacuum pump and the cold trap can be used together so that the condensable gas freezes out on the cold trap, while the non-condensable gas can be suctioned off by the vacuum pump. Using a cold trap allows that the usually expensive precursors with a low vapor pressure can be retained so as to reuse them.
  • According to an especially advantageous embodiment of the gas supply device, a carrier gas is delivered into the first gas line between the supply container and the intermediate storage device. The carrier gas can be an inert gas, a second precursor or a gas mix with a second precursor. Carrier gases are used in CVD processes for transporting the precursors more rapidly to the object to be coated and for removing reaction products or impurities from there. Therefore, the carrier gas transports the first precursor faster through the gas supply device, and mixing the first precursor with the carrier gas has the additional advantageous effect that as a result of diluting the first precursor its partial pressure in the intermediate storage device is lower than the total pressure p[0030] 2 in the intermediate storage device. This allows another decrease in the temperature T2 in the intermediate storage device because the condensation of the precursor depends solely on the partial pressure of the first precursor and not on the total pressure in the intermediate storage device. By decreasing the partial pressure in the intermediate storage device the temperature T2 can be reduced even further. The temperature T2 is restricted by the lower limit at which the temperature-dependent saturation vapor pressure is higher than the partial pressure of the first precursor in the intermediate storage device, which prevents condensation.
  • In the above embodiment, a mix is stored in the intermediate storage device whose precursor concentration (or molar fraction) is set to be constant. This is ensured by setting a constant ratio between the two gas inflows (precursor and transport/reaction gas). By producing the above described locking between the supply container and the intermediate storage device and at a constant pressure p[0031] 1 a defined mass flow from the supply container to the intermediate storage device is ensured. Additionally, the locking prevents the gas mix from diffusing from the intermediate storage device back into the supply container.
  • It is practical to supply the carrier gas after the first metering device so that the mass flow flowing through the metering device solely contains the precursor, and the carrier gas is unable to flow into the supply container via the metering device because of the pressure difference. [0032]
  • According to another embodiment, the carrier gas is delivered via a third metering device which is preferably a mass flow controller so that the mass inflow of the carrier gas can be controlled. [0033]
  • According to an especially advantageous embodiment, the mass flow of the carrier gas is set proportionally dependent on the mass flow of the first precursor from the supply container to the intermediate storage device. As a result, a mixing ratio between the first precursor and the carrier gas is defined in the intermediate storage device by means of the proportionality factor. The constant mixing ratio in the intermediate storage device allows a defined supply of the first precursor to the coater and thus finally, a uniform deposition rate. [0034]
  • In order to produce optical functional coatings with a niobium oxide coating, the first precursor is advantageously an Nb compound, preferably NbCl[0035] 5 or an Nb alcoholate, and the carrier gas is preferably O2. When SiO2/Nb2O5 alternating coatings are produced, for example, with a gas mix of O2 and NbCl5, the reaction gases are directly available in the intermediate storage device for depositing the Nb2O5 coating without having to use another gas as a carrier gas.
  • For coatings containing tantalum, TaCl[0036] 5 or a Ta alcoholate can preferably be used. For coatings containing titanium or aluminum, TIPT (titanium isopropylate) or AICl3 can preferably be used.
    •
  • An exemplary embodiment of the invention is explained in more detail by means of the drawings, as follows: [0037]
  • FIG. 1 is a diagram of the temperature dependence of the saturation vapor pressure of an NbCl[0038] 5 precursor.
  • FIG. 2 is an exemplary embodiment of the gas supply device and a gas exchange station as well as a CVD deposition system, and [0039]
  • FIG. 3 is a combination of two gas supply systems with two coaters that are connected via a gas exchange station. [0040]
  • The bottom curve in the diagram of FIG. 1 illustrates the course of the saturation vapor pressure of NbCl[0041] 5 in dependence of the temperature. Niobium pentachloride (NbCl5) is present as a solid over the temperature range shown and sublimating directly into the gas phase. The bottom curve in the diagram shows the maximum saturation vapor pressure achievable by the partial pressure of NbCl5 in the gas phase in equilibrium with the solid phase. At 50° C., the saturation vapor pressure is at approx. 0.04 mbar. Said pressure is too low to achieve an adequate mass flow for NbCl5 in gaseous state through the tubes and valves of a gas supply system. In order to provide an adequate quantity of gas and transporting said gas through a line system the temperature, and thus the saturation vapor pressure must be increased.
  • The top curve in FIG. 1 shows the maximum setting for the total pressure or absolute pressure in the case where NbCl[0042] 5 is present in dilution with another gas to a 5% NbCl5 ratio. The total pressure can then be approx. 20 times higher than the saturation vapor pressure of NbCl5 before NbCl5 condenses from said gas mix.
  • FIG. 2 shows a diagram of a [0043] gas supply device 1 where the precursor NbCl5 is stored in a supply container 2. The evaporation of the precursor generates a first pressure p1 in the supply container 2. The supply container 2 is connected via a first gas line 3 to an intermediate storage device 4. In the first gas line 3, coming from the supply container 2 a first cut-off valve 5 and a mass flow controller 6 (MFC) are disposed. With the first cut-off valve 5, the first gas line 3 can be locked relative to the supply container 2 so that the supply container 2 can be removed from the gas supply device 1 for maintenance work or for refilling the NbCl5 precursor.
  • During the gas supply operation, the first [0044] mass flow controller 6 is used for measuring the mass flow from the supply container 2 to the intermediate storage device 4 and for adjusting the mass flow rate to a specified value.
  • Between the first cut-off [0045] valve 5 and the first mass flow controller 6, another gas line branches off from the first gas line 3, which can be locked by means of a second cut-off valve 7. When the cut-off valve 7 and the cut-off valve 5 are open, the supply container 2 can be evacuated by means of a forepump 8. Also, any purging gas that may have been supplied (supply not shown) can be pumped out by means of said forepump 8.
  • Between the first [0046] mass flow controller 6 and the intermediate storage device 4 another line enters the first gas line 3. In said line a second mass flow controller 9 is disposed. Through the second mass flow controller 9, a carrier gas or another reaction gas, in the present case oxygen (O2), can be delivered into the first gas line 3. The NbCl5 precursor is then mixed with the carrier gas and delivered to the intermediate storage device 4.
  • Via a [0047] second gas line 10 the gas or gas mix can be removed from the intermediate storage device 4 and delivered to a gas exchange station 11. Starting at the intermediate storage device 4, a first metering valve 12 and a third curt-off valve 13 are disposed in the second gas line 10 before the second gas line 10 enters a deposition system 14. When the third cut-off valve 13 is open the first metering valve 12 causes a pressure drop between the intermediate storage device 4 and the outlet side of the first metering valve 12.
  • Another gas line leaves the [0048] intermediate storage device 4 via a flow control valve 15 which is also connected to the forepump 8. The pressure in the intermediate storage device 4 is measured with a pressure sensor 16. The measured pressure value is delivered to a pressure controller 17 controlling the flow control valve 15. The pressure controller 17 maintains the pressure in the intermediate storage device 4 at a specified second pressure value p2. If the pressure in the intermediate storage device 4 exceeds the specified second pressure value p2, the pressure controller 17 causes the flow control valve 15 to open and discharge excess gas to the forepump 8.
  • In the [0049] gas exchange station 11, behind the third cut-off valve 13, another deposition gas can alternately be delivered to the second gas line 10 from another gas line via a fourth cut-off valve 18. In the present case, the other deposition gas is a hexamethyl disiloxane-oxygen mix (HMDSO/O2) for depositing SiO2 coatings. Therefore, by switching the cut-off valves 13 and 18, the deposition operation can be switched from Nb2O5 deposition (from the NbCl5 precursor) to SiO2 deposition.
  • The [0050] gas supply device 1 is divided into two temperature zones. The first temperature zone is the supply area 19 comprising the supply container 2, the first cut-off valve 5, a portion of the first gas line 3, the first mass flow controller 6, the second cut-off valve 7 and a portion of the incoming and outgoing gas lines. The supply area 19 is maintained at a first constant temperature T1. It is heated by means of common heating methods. The temperature is preferably maintained constant by means of an automatic control system. As a result of the first temperature T1, the saturation vapor pressure p1 of the first precursor, in the present case NbCl5, is obtained in the supply container. Heating the elements connected to the supply container 2 prevents condensation in the supply area 19.
  • Furthermore, an [0051] intermediate storage area 20 comprising a portion of the first gas line 3, the intermediate storage device 4, a portion of the second gas line 10, the first metering valve 12, the pressure sensor 16, the flow control valve 15 and any gas lines for purging or delivering other gases is maintained at a second temperature T2.
  • According to the exemplary embodiment, oxygen is supplied through the second [0052] mass flow controller 9 into the first gas line 3. Appropriate control of the mass flow controllers 6 and 9 achieves that the second mass flow controller 9 delivers a mass flow of oxygen proportional to the first mass flow controller 6. In the present case, the mass flow of the oxygen is 19 times higher than the mass flow of NbCl5, resulting in a mixing ratio of 5% NbCl5 gas and 95% oxygen in the intermediate storage device 4. The intermediate storage device is maintained at a total pressure of 40 mbar. The partial pressure of the NbCl5 in the intermediate storage device is approx. 2 mbar, which is clearly below the saturation vapor pressure of 4 mbar at 120° C. (see FIG. 1) and which prevents condensation of NbCl5.
  • The first temperature T[0053] 2 is equal to 200° C. so that the saturation vapor pressure of NbCl5 according to FIG. 1 is approx. 105 mbar and therefore p1 is approx. 100 mbar. Accordingly, a pressure difference with a factor greater than 2 exists between the supply container 2 and the intermediate storage device 4 so that the mass flow from the supply container 2 into the intermediate storage device 4 is ensured.
  • The pressure p[0054] 2 in the intermediate storage device 4 is controlled by means of the flow control valve 15. The mass flow controllers are set for constant flow rates. Alternatively, with a fixed cross-section of the opening of the flow control valve 15 to the forepump 8, the pressure p2 is controlled via a variable control of the mass flow rates of the mass flow controllers 6, 9 at a constant ratio.
  • Another pressure drop is caused by the [0055] first metering valve 12 between the intermediate storage device and the gas exchange station, which further decreases the partial pressure of NbCl5, and the temperature in the area of the gas exchange station can be reduced further. In the present case, it is 75° C. so that according to FIG. 1, the maximum partial pressure of NbCl5 can be 0.25 mbar, and therefore the total pressure of the gas mix can be max. 5 mbar. Therefore, between the intermediate storage area 20 and the gas exchange station 11, the pressure decreases by at least a factor 8. With such a pressure drop, a locking takes place in the first metering valve 12, which means with such a pressure drop the mass flow through the first metering valve depends solely on its conductance and the pressure p2 in the intermediate storage device 4 and it is independent of the pressure in the gas exchange station 11. Therefore, in order to obtain a constant mass flow from the intermediate storage device 4 to the gas exchange station 11 and continuing to the deposition system 14, it is not necessary to provide another mass flow controller because the mass flow rate is determined via the constant pressure p2 and the conductance setting of the first metering valve.
  • According to another embodiment of the gas supply device, the first [0056] mass flow controller 6 can also be substituted by a metering valve corresponding to the first metering valve 12, because again, the pressure drop between the supply container 2 and the intermediate storage device 4 is greater than a factor 2. This allows that the high-temperature mass flow controller 6 can be replaced by a less expensive metering valve.
  • The above [0057] gas supply device 1 was described merely as an example for using the NbCl5 precursor and oxygen as carrier gas. Other precursors with a low vapor pressure and other carrier gases can also be used. Examples of precursors are niobium ethoxide, aluminum trichloride, titanium isopropoxide, tantalum ethoxide. The temperatures to be set, T1 for the supply area 19, T2 for the intermediate storage area 20 and T3 for the gas exchange station can then be determined based on the curves of the saturation vapor pressure for the respective precursor allowing for the individual concentrations (molar fractions).
  • FIG. 3 shows a [0058] multi-chamber coating system 14, 14′ which can be supplied by multiple gas supply devices 19, 20; 19′, 20′ via a gas exchange station 11 with two different precursors for producing alternating coatings. The reference numbers used in FIG. 2 and described above are used for identical elements in FIG. 3.
  • The functional method of the two [0059] gas supply devices 19, 20; 19′, 20′ substantially corresponds to the gas supply device 1 of FIG. 2 with the difference that the temperature T1 of the supply area 19 and the temperature T2 of the intermediate storage area 20 are optimized for the temperature dependence of the precursor in the supply container 2, and the temperature T4 in the supply area 19′ and the temperature T5 in the intermediate storage area 20′ are optimized for the temperature-dependent course of the vapor pressure of the second precursor in the supply container 2′.
  • Reference List [0060]
  • 1 gas supply device [0061]
  • 2 supply container [0062]
  • 3 first gas line [0063]
  • 4 intermediate storage device [0064]
  • 5 first cut-off valve [0065]
  • 6 first mass flow controller [0066]
  • 7 second cut-off valve [0067]
  • 8 forepump [0068]
  • 9 second mass flow controller [0069]
  • 10 second gas line [0070]
  • 11 gas exchange station [0071]
  • 12 first metering valve [0072]
  • 13 third cut-off valve [0073]
  • 14 deposition system [0074]
  • 15 flow control valve [0075]
  • 16 pressure sensor [0076]
  • 17 pressure controller [0077]
  • 18 fourth cut-off valve [0078]
  • 19 supply area [0079]
  • 20 intermediate storage area [0080]

Claims (24)

1. Gas supply device for precursors with a low vapor pressure, especially for CVD coating systems, with a supply container (2) for a first precursor with a low vapor pressure, where the supply container (2) with the precursor is maintained at a first temperature T1, with an intermediate storage device (4) for intermediate storage of the vaporous first precursor, where the intermediate storage device (4) is maintained at a second temperature T2 and at a constant pressure p2 which is lower than a pressure p1 in the supply container (2), with a first gas line (3) between the supply container (2) and the intermediate storage device (4), and with a second gas line (10) on the intermediate storage device (4) for removing gas from the intermediate storage device (4), characterized in that the first temperature T1 is higher than the second temperature T2.
2. Gas supply device as defined in claim 1, characterized in that the temperature T2 in the intermediate storage device (4) is set such that the saturation vapor pressure of the first precursor is higher than its partial pressure in the intermediate storage device (4).
3. Gas supply device as defined in claim 1 or 2, characterized in that the pressure p1 of the first precursor in the supply container (2) is the saturation vapor pressure and the first precursor is in equilibrium between the liquid or solid phase and the vaporous phase.
4. Gas supply device as defined in claim 3, characterized in that the temperature T1 of the supply container (2) is set such that the pressure p1 of the first precursor in the supply container (2) is between 1.5 and 10 times higher than the pressure p2.
5. Gas supply device as defined in claim 4, characterized in that the pressure p1 is approximately twice as high as the pressure p2.
6. Gas supply device as defined in any of the preceding claims 1 to 5, characterized in that between the supply container (2) and the intermediate storage device (4) a first metering device (6) is disposed for adjusting the mass flow from the supply container (2) to the intermediate storage device (4).
7. Gas supply device as defined in claim 6, characterized in that the first metering device (6) is a controllable mass flow controller.
8. Gas supply device as defined in any of the claims 1 to 7, characterized in that the intermediate storage device (4) is coupled to a gas outlet via a second metering device (15).
9. Gas supply device as defined in claim 8, characterized in that the second metering device (15) is a flow control valve.
10. Gas supply device as defined in claim 8 or 9, characterized in that the gas outlet is connected to a vacuum pump (8) and/or cold trap.
11. Gas supply device as defined in any of the claims 8 to 10, characterized in that the constant pressure p2 in the intermediate storage device (4) is set by the second metering device (15).
12. Gas supply device as defined in any of the claims 1 to 11, characterized in that a carrier gas can be delivered into the first gas line (3) between the supply container (2) and the intermediate storage device (4).
13. Gas supply device as defined in any of the claims 6 to 11, characterized in that a carrier gas can be delivered into the first gas line (3) between the first metering device (6) and the intermediate storage device (4).
14. Gas supply device as defined in claim 12 or 13, characterized in that the carrier gas is delivered via a third metering device (9).
15. Gas supply device as defined in claim 14, characterized in that the third metering device (9) is a mass flow controller.
16. Gas supply device as defined in any of the claims 14 or 15, characterized in that the constant pressure p2 is set by the mass flows of the first and third metering devices (6, 9) with a fixed cross-section of the opening of the second metering device (15).
17. Gas supply device as defined in any of the claims 12 to 16, characterized in that the mass flow of the carrier gas is proportional to the mass flow of the first precursor from the supply container (2) to the intermediate storage device (4).
18. Gas supply device as defined in any of the claims 1 to 17, characterized in that the precursor is an Nb, Ta, Ti or Al compound.
19. Gas supply device as defined in claim 18, characterized in that the Nb compound is NbCl5 or Nb ethoxide.
20. Gas supply device as defined in claim 18, characterized in that the Ta compound is TaCl5 or Ta ethoxide.
21. Gas supply device as defined in claim 18, characterized in that the Al compound is AICl3.
22. Gas supply device as defined in claim 18, characterized in that the Ti compound is TIPT (titanium isopropylate).
23. Gas supply device as defined in any of the claims 12 to 22, characterized in that the carrier gas is an inert gas, a second precursor or a gas mix with a second precursor, where under normal conditions each of the carrier gases is gaseous.
24. Gas supply device as defined in claim 23, characterized in that the carrier gas is or contains oxygen.
US10/203,191 2000-02-10 2001-01-27 Gas supply device for precursors with a low vapor pressure Abandoned US20030145789A1 (en)

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Cited By (244)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060130765A1 (en) * 2004-12-17 2006-06-22 Uwe Hoffmann Arrangement for coating a substrate
US20060222768A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Method and system for precursor delivery
US20080066860A1 (en) * 2005-02-24 2008-03-20 International Business Machines Corporation Ta-TaN SELECTIVE REMOVAL PROCESS FOR INTEGRATED DEVICE FABRICATION
US20110311725A1 (en) * 2009-02-19 2011-12-22 Sundew Technologies Llc Apparatus and methods for safely providing hazardous reactants
US20130203267A1 (en) * 2012-02-06 2013-08-08 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
US20130298833A1 (en) * 2011-10-06 2013-11-14 Industrial Technology Research Institute Evaporation apparatus
US20150187611A1 (en) * 2013-12-27 2015-07-02 Hitachi Kokusai Electric Inc. Substrate processing system, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
US20160208382A1 (en) * 2015-01-21 2016-07-21 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus
US20180174826A1 (en) * 2016-12-15 2018-06-21 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
WO2021067764A1 (en) 2019-10-04 2021-04-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Supply system for low volatility precursors
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
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US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447861B2 (en) * 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11459657B2 (en) * 2019-03-06 2022-10-04 Ckd Corporation Gas supply unit and gas supply method
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11819838B2 (en) 2016-04-26 2023-11-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Precursor supply system and precursors supply method
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12051602B2 (en) 2020-05-04 2024-07-30 Asm Ip Holding B.V. Substrate processing system for processing substrates with an electronics module located behind a door in a front wall of the substrate processing system
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
US12087586B2 (en) 2021-04-12 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
RU2384652C2 (en) * 2004-05-20 2010-03-20 Акцо Нобель Н.В. Bubbler for constant delivery of vapour of solid chemical
US7572337B2 (en) 2004-05-26 2009-08-11 Applied Materials, Inc. Blocker plate bypass to distribute gases in a chemical vapor deposition system
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US20080241805A1 (en) * 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
CN101522943B (en) * 2006-10-10 2013-04-24 Asm美国公司 Precursor delivery system
KR101113328B1 (en) * 2009-12-30 2012-03-13 주식회사 하이닉스반도체 Method of fabricating a conductive layer in semiconductor device
US8703103B2 (en) * 2010-02-05 2014-04-22 Air Products And Chemicals, Inc. Volatile imidazoles and group 2 imidazole based metal precursors
US8551609B2 (en) 2010-04-27 2013-10-08 Ppg Industries Ohio, Inc. Method of depositing niobium doped titania film on a substrate and the coated substrate made thereby
US8927066B2 (en) * 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery
KR20230080495A (en) 2012-05-31 2023-06-07 엔테그리스, 아이엔씨. Source reagent-based delivery of fluid with high material flux for batch deposition
DE102012210332A1 (en) * 2012-06-19 2013-12-19 Osram Opto Semiconductors Gmbh ALD COATING LINE
DE102013109696B3 (en) * 2013-09-05 2015-02-26 Von Ardenne Gmbh Coating method and coating device
KR101592250B1 (en) 2014-08-04 2016-02-05 주식회사 엔씨디 The device for supplying a gas to the deposition apparatus
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
KR20200020608A (en) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. Solid source sublimator
CN110183111B (en) * 2019-06-19 2024-02-02 广东健诚高科玻璃制品股份有限公司 Steaming coating device and steaming coating material for daily glass ceramic and preparation method thereof
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
DE102023103802A1 (en) 2023-02-16 2024-08-22 Khs Gmbh Device and method for supplying a system for coating workpieces with process gases required for the coating process

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393013A (en) * 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US4619844A (en) * 1985-01-22 1986-10-28 Fairchild Camera Instrument Corp. Method and apparatus for low pressure chemical vapor deposition
US4718443A (en) * 1987-02-06 1988-01-12 Conoco Inc. Mass flowmeter apparatus
US4917136A (en) * 1988-05-08 1990-04-17 Tadahiro Ohmi Process gas supply piping system
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
US5313982A (en) * 1988-07-08 1994-05-24 Tadahiro Ohmi Gas supply piping device for a process apparatus
US5480488A (en) * 1992-10-28 1996-01-02 Schott Glaswerke Apparatus for supplying CVD coating devices
US5516366A (en) * 1993-10-13 1996-05-14 Kabushiki-Kaisha Motoyama Seisakusho Supply control system for semiconductor process gasses
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US5660528A (en) * 1994-12-26 1997-08-26 Nec Corporation Liquid delivery system at specified rate using ultrasonic vibrators
US5693189A (en) * 1994-08-05 1997-12-02 Shin-Etsu Handotai Co., Ltd. Method and apparatus for supply of liquid raw material gas
US5749389A (en) * 1993-12-22 1998-05-12 Liquid Air Corporation Purgeable connection for gas supply cabinet
US5865205A (en) * 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
US6007330A (en) * 1998-03-12 1999-12-28 Cosmos Factory, Inc. Liquid precursor delivery system
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146657A (en) * 1976-11-01 1979-03-27 Gordon Roy G Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
JP2773893B2 (en) * 1989-03-22 1998-07-09 三菱電機株式会社 Mixture thin film forming equipment
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US5271957A (en) * 1992-06-18 1993-12-21 Eastman Kodak Company Chemical vapor deposition of niobium and tantalum oxide films
US5492724A (en) * 1994-02-22 1996-02-20 Osram Sylvania Inc. Method for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
US5925189A (en) * 1995-12-06 1999-07-20 Applied Materials, Inc. Liquid phosphorous precursor delivery apparatus
US5744192A (en) * 1996-11-08 1998-04-28 Sharp Microelectronics Technology, Inc. Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS
KR100246155B1 (en) * 1997-07-28 2000-04-01 최형수 Amidoalane precursors for chemical vapor deposition of aluminum
US6080446A (en) * 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
JPH11117070A (en) 1997-10-14 1999-04-27 Nissan Motor Co Ltd Chemical vapor growth device
JP3633763B2 (en) * 1997-10-20 2005-03-30 株式会社荏原製作所 Vaporizer
US6037001A (en) * 1998-09-18 2000-03-14 Gelest, Inc. Method for the chemical vapor deposition of copper-based films

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393013A (en) * 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US4619844A (en) * 1985-01-22 1986-10-28 Fairchild Camera Instrument Corp. Method and apparatus for low pressure chemical vapor deposition
US4718443A (en) * 1987-02-06 1988-01-12 Conoco Inc. Mass flowmeter apparatus
US4917136A (en) * 1988-05-08 1990-04-17 Tadahiro Ohmi Process gas supply piping system
US5313982A (en) * 1988-07-08 1994-05-24 Tadahiro Ohmi Gas supply piping device for a process apparatus
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
US5480488A (en) * 1992-10-28 1996-01-02 Schott Glaswerke Apparatus for supplying CVD coating devices
US5516366A (en) * 1993-10-13 1996-05-14 Kabushiki-Kaisha Motoyama Seisakusho Supply control system for semiconductor process gasses
US5749389A (en) * 1993-12-22 1998-05-12 Liquid Air Corporation Purgeable connection for gas supply cabinet
US5693189A (en) * 1994-08-05 1997-12-02 Shin-Etsu Handotai Co., Ltd. Method and apparatus for supply of liquid raw material gas
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US5660528A (en) * 1994-12-26 1997-08-26 Nec Corporation Liquid delivery system at specified rate using ultrasonic vibrators
US5865205A (en) * 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
US6007330A (en) * 1998-03-12 1999-12-28 Cosmos Factory, Inc. Liquid precursor delivery system
US6132515A (en) * 1998-03-12 2000-10-17 Cosmos Factory, Inc. Liquid precursor delivery system
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system

Cited By (291)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8192548B2 (en) 2004-12-17 2012-06-05 Applied Materials Gmbh & Co. Kg Arrangement for coating a substrate
US20060130765A1 (en) * 2004-12-17 2006-06-22 Uwe Hoffmann Arrangement for coating a substrate
US20080066860A1 (en) * 2005-02-24 2008-03-20 International Business Machines Corporation Ta-TaN SELECTIVE REMOVAL PROCESS FOR INTEGRATED DEVICE FABRICATION
US20130224959A1 (en) * 2005-02-24 2013-08-29 International Business Machines Corporation Ta-TaN SELECTIVE REMOVAL PROCESS FOR INTEGRATED DEVICE FABRICATION
US8865597B2 (en) * 2005-02-24 2014-10-21 International Business Machines Corporation Ta—TaN selective removal process for integrated device fabrication
US20060222768A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Method and system for precursor delivery
US7485338B2 (en) 2005-03-31 2009-02-03 Tokyo Electron Limited Method for precursor delivery
US20110311725A1 (en) * 2009-02-19 2011-12-22 Sundew Technologies Llc Apparatus and methods for safely providing hazardous reactants
US9181097B2 (en) * 2009-02-19 2015-11-10 Sundew Technologies, Llc Apparatus and methods for safely providing hazardous reactants
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US20130298833A1 (en) * 2011-10-06 2013-11-14 Industrial Technology Research Institute Evaporation apparatus
US9873942B2 (en) 2012-02-06 2018-01-23 Asm Ip Holding B.V. Methods of vapor deposition with multiple vapor sources
US20130203267A1 (en) * 2012-02-06 2013-08-08 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
US9238865B2 (en) * 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US20150187611A1 (en) * 2013-12-27 2015-07-02 Hitachi Kokusai Electric Inc. Substrate processing system, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US20160208382A1 (en) * 2015-01-21 2016-07-21 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11956977B2 (en) 2015-12-29 2024-04-09 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11819838B2 (en) 2016-04-26 2023-11-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Precursor supply system and precursors supply method
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US12000042B2 (en) 2016-12-15 2024-06-04 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
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US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
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US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
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US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
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US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11459657B2 (en) * 2019-03-06 2022-10-04 Ckd Corporation Gas supply unit and gas supply method
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11453946B2 (en) 2019-06-06 2022-09-27 Asm Ip Holding B.V. Gas-phase reactor system including a gas detector
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
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US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
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US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
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US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
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USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US12040229B2 (en) 2019-08-22 2024-07-16 Asm Ip Holding B.V. Method for forming a structure with a hole
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US12033849B2 (en) 2019-08-23 2024-07-09 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
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US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
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US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
WO2021067764A1 (en) 2019-10-04 2021-04-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Supply system for low volatility precursors
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
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US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
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US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
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US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
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US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
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US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
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US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
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US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US12051602B2 (en) 2020-05-04 2024-07-30 Asm Ip Holding B.V. Substrate processing system for processing substrates with an electronics module located behind a door in a front wall of the substrate processing system
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US12055863B2 (en) 2020-07-17 2024-08-06 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US20220195603A1 (en) * 2020-12-21 2022-06-23 Samsung Electronics Co., Ltd. Reaction gas supply system
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US12087586B2 (en) 2021-04-12 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

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US20050132959A1 (en) 2005-06-23
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WO2001059176A1 (en) 2001-08-16
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ATE291105T1 (en) 2005-04-15
CA2399477A1 (en) 2001-08-16
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JP2003527481A (en) 2003-09-16
US7413767B2 (en) 2008-08-19
HK1052031A1 (en) 2003-08-29
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TW527435B (en) 2003-04-11
JP4772246B2 (en) 2011-09-14

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