KR20100079920A - Apparatus for joining of substrate - Google Patents

Apparatus for joining of substrate Download PDF

Info

Publication number
KR20100079920A
KR20100079920A KR1020080138517A KR20080138517A KR20100079920A KR 20100079920 A KR20100079920 A KR 20100079920A KR 1020080138517 A KR1020080138517 A KR 1020080138517A KR 20080138517 A KR20080138517 A KR 20080138517A KR 20100079920 A KR20100079920 A KR 20100079920A
Authority
KR
South Korea
Prior art keywords
chamber
upper chamber
substrate
elevating
support
Prior art date
Application number
KR1020080138517A
Other languages
Korean (ko)
Other versions
KR101111063B1 (en
Inventor
황재석
Original Assignee
엘아이지에이디피 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘아이지에이디피 주식회사 filed Critical 엘아이지에이디피 주식회사
Priority to KR1020080138517A priority Critical patent/KR101111063B1/en
Publication of KR20100079920A publication Critical patent/KR20100079920A/en
Application granted granted Critical
Publication of KR101111063B1 publication Critical patent/KR101111063B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133354—Arrangements for aligning or assembling substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/28—Adhesive materials or arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A substrate laminating apparatus for reducing alignment error of two boards is provided to control the interval between two boards and open and close the driving unit. CONSTITUTION: An upper chamber(135) offers a process space by a lower chamber(131). An upper plate(136) supports an upper substrate. An upper plate support unit(140) is arranged in the outside of the upper chamber and it is separated from the upper chamber. The upper platen supporting part supports the upper platen through the upper chamber. A driving unit(150) raises the upper chamber and the process space is and closes opened.

Description

기판합착장치{Apparatus for joining of substrate}Apparatus for joining of substrate}

본 발명은 기판합착장치에 관한 것으로, 더욱 상세하게는 두 기판을 합착하는 기판합착장치에 관한 것이다.The present invention relates to a substrate bonding apparatus, and more particularly to a substrate bonding apparatus for bonding two substrates.

정보화 사회가 발전함에 따라 디스플레이 장치에 대한 요구도 다양한 형태로 증가되어 왔다. 이에 근래에는 LCD(Lipuid Crystal Display Device), PDP(Plasma Display Panel), ELD(Electro Luminescent Display), VFD(Vacuum Fluorescent Display)등 여러 가지 평판 디스플레이 장치가 연구되어 왔고 그 일부는 이미 실생활에 널리 사용되고 있다.As the information society has developed, the demand for display devices has increased in various forms. Recently, various flat panel display devices such as LCD (Lipuid Crystal Display Device), PDP (Plasma Display Panel), ELD (Electro Luminescent Display), VFD (Vacuum Fluorescent Display) have been studied and some of them are widely used in real life. .

그 중 LCD의 경우에는 CRT(Cathode Ray Tube)에 비하여 화질이 우수하고 경량, 박형, 저소비 전력의 특징에 따른 장점으로 인하여 이동형 화상 표시장치의 용도로 많이 사용되고 있다.Among them, LCDs are being used for mobile image display devices because of their excellent image quality compared to CRT (Cathode Ray Tube) and the advantages of light weight, thinness, and low power consumption.

이러한 LCD는 전극이 형성되어 있는 TFT(Thin Film Transistor) 기판과 형광체가 도포된 CF(Color filter) 기판 사이에 액정(Liquid Crystal)을 주입하여 형성된다. 두 기판 사이에는 소정 간격으로 두 기판 사이의 간격을 유지하기 위한 간격재(Spacer)가 배치되며, 두 기판의 외주면에는 액정 물질을 누출을 막기 위한 밀봉 재(Sealer)가 배치된다.The LCD is formed by injecting a liquid crystal between a TFT (Thin Film Transistor) substrate on which an electrode is formed and a CF (Color filter) substrate coated with phosphors. Spacers are disposed between the two substrates to maintain a gap between the two substrates at predetermined intervals, and a sealer is disposed on the outer circumferential surfaces of the two substrates to prevent leakage of the liquid crystal material.

따라서 LCD를 제조함에 있어서, TFT기판 및 CF 기판을 각각 제조한 후에 양 기판을 합착하고 그 사이의 공간에 액정 물질을 주입하는 공정이 필수적으로 필요하며 이중 기판을 합착시키는 공정은 LCD의 품질을 결정하는 중요한 공정 중에 하나이다.Therefore, in manufacturing LCD, after manufacturing TFT substrate and CF substrate, it is necessary to join both substrates and inject liquid crystal material into the space between them, and the process of bonding double substrates determines the quality of LCD. Is one of the important processes.

일반적인 기판합착장치는 진공이 형성되는 챔버의 내부에서 두 기판의 합착 공정을 수행한다. 챔버는 상부챔버와 하부챔버로 분리되며, 상부챔버와 하부챔버 중 어느 하나를 승강시켜 두 기판을 반입, 또는 반출시키도록 구성된다. 따라서 두 챔버 중 어느 하나를 승강시키기 위한 개폐 구동부가 마련되어야 한다.A general substrate bonding apparatus performs a bonding process of two substrates in a chamber in which a vacuum is formed. The chamber is divided into an upper chamber and a lower chamber, and is configured to elevate either one of the upper chamber and the lower chamber to bring in or take out two substrates. Therefore, the opening and closing drive unit for lifting up and down either chamber should be provided.

또한 챔버 내부에서 두 기판의 정렬을 위해 두 기판의 간격조절이 필요하다. 따라서 개폐 구동부와는 별도로 두 기판 중 어느 하나를 승강시키는 간격조절 구동부가 마련되어야 한다.It is also necessary to adjust the spacing of the two substrates to align the two substrates in the chamber. Therefore, apart from the opening and closing drive unit, a spacing control unit for lifting one of the two substrates should be provided.

하지만, 종래의 기판합착장치는 챔버의 개폐와 두 기판의 간격조절을 위한 구동계가 각각 별도로 마련된다. 이에 따라 초기설비 투자비용이 증가되는 문제점이 있다.However, the conventional substrate bonding apparatus is provided with a drive system for opening and closing the chamber and adjusting the distance between the two substrates. Accordingly, there is a problem in that the initial investment cost increases.

또한 종래의 기판합착장치는 챔버와 기판을 별도의 구동부에 의해 지지하므로, 두 기판의 정렬이 번거로우며, 정렬오차가 발생되는 문제점이 있다.In addition, since the conventional substrate bonding apparatus supports the chamber and the substrate by separate driving units, the alignment of the two substrates is cumbersome, and there is a problem that alignment errors occur.

본 발명의 목적은 하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격조절 을 함께 수행되도록 한 기판합착장치를 제공하기 위한 것이다.An object of the present invention is to provide a substrate bonding apparatus to perform the opening and closing of the chamber and the control of the distance between the two substrates by one drive unit.

기판합착장치는 하부기판을 지지하는 하부챔버;상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;및 상기 상부챔버를 승강시켜 상기 처리공간을 개폐시키며, 상기 상정반지지부를 승강시켜 상기 하부기판에 대한 상기 상부기판의 간격을 조절하는 구동부;를 포함한다.The substrate bonding apparatus may include: a lower chamber supporting a lower substrate; an upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; disposed inside the upper chamber and spaced apart from the upper chamber, An upper support plate disposed outside the upper chamber and spaced apart from the upper chamber to support the upper plate through the upper chamber; and opening and closing the upper and lower chambers to open and close the processing space. And a driving unit for elevating the upper support unit to adjust a distance between the upper substrate and the lower substrate.

상기 구동부는 회전동력을 제공하는 구동모터;상기 하부챔버와 상기 상부챔버를 관통하여 상기 상정반지지부에 나사결합되며, 상기 구동모터에 의해 회전되어 상기 상정반지지부를 승강시키는 스크류;상기 상부챔버의 하부에 배치되어 상기 스크류에 나사결합되며, 상기 스크류의 회전에 따라 상기 상부챔버를 지지하여 상기 스크류의 회전에 따라 상기 상부챔버를 승강시키는 상기 승강부재;및 상기 하부챔버에 고정되고, 상기 승강부재, 상기 상부챔버 및 상기 상정반지지부를 관통하며, 상기 상부챔버와 상기 승강부재의 승강을 안내하는 승강가이드;를 더 포함할 수 있다.A driving motor providing rotational power; a screw coupled to the upper support part through the lower chamber and the upper chamber, the screw being rotated by the driving motor to elevate the upper support part; An elevating member disposed below and screwed to the screw and supporting the upper chamber according to the rotation of the screw to elevate the upper chamber according to the rotation of the screw; and fixed to the lower chamber, and the elevating member And an elevating guide penetrating the upper chamber and the upper support plate and guiding elevating the upper chamber and the elevating member.

상기 구동부는 상기 상부챔버와 상기 승강부재의 사이에 배치되는 완충부재를 더 포함할 수 있다.The driving unit may further include a buffer member disposed between the upper chamber and the lifting member.

상기 기판합착장치는 상기 하부챔버와 상기 상부챔버의 사이에 배치되는 제1 기밀부재를 더 포함할 수 있다.The substrate bonding apparatus may further include a first hermetic member disposed between the lower chamber and the upper chamber.

상기 상정반지지부는 상기 상부챔버의 상측에 배치되며, 상기 구동부에 의해 승강되는 지지판;및 상기 지지판으로부터 연장되며, 상기 상부챔버를 관통하여 상기 상정반에 체결되는 지지축을 포함할 수 있다.The upper support part may be disposed on an upper side of the upper chamber, and may include a support plate that is lifted by the driving unit; and a support shaft extending from the support plate and fastened to the upper plate by passing through the upper chamber.

상기 기판합착장치는 상기 지지판과 상기 상부챔버의 사이에 배치되는 제2 기밀부재를 더 포함할 수 있다.The substrate bonding apparatus may further include a second hermetic member disposed between the support plate and the upper chamber.

상기 기판합착장치는 상기 하부챔버를 지지하는 프레임;및 상기 프레임에 지지되며, 상기 구동부를 평면 상에서 이동시키는 정렬스테이지를 더 포함할 수 있다.The substrate bonding apparatus may further include a frame supporting the lower chamber, and an alignment stage supported by the frame and moving the driving unit on a plane.

상기 기판합착장치는 상기 상정반이 승강되는 경로에 배치되며, 상기 상정반의 위치를 감지하여 상기 하부기판과 상기 상부기판의 간격을 측정할 수 있도록 하는 간격감지기를 더 포함할 수 있다.The substrate bonding apparatus may further include a gap detector disposed on a path in which the upper plate is lifted and detecting a position of the upper plate to measure a distance between the lower substrate and the upper substrate.

본 발명에 따른 기판합착장치는 하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격을 조절하므로, 초기 설비투자비용이 절감되며, 두 기판의 정렬오차를 줄일 수 있는 효과가 있다. Since the substrate bonding apparatus according to the present invention controls the opening and closing of the chamber and the distance between the two substrates by one driving unit, the initial equipment investment cost is reduced and the alignment error of the two substrates can be reduced.

이하, 본 실시예에 따른 기판합착장치에 대해 첨부된 도면을 참조하여 상세히 설명하도록 한다. Hereinafter, the substrate bonding apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

도 1은 본 실시예에 따른 기판합착장치를 나타낸 사시도이고, 도 2는 본 실 시예에 따른 기판합착장치를 나타낸 단면도이다. 도 1 및 도 2를 참조하면, 기판합착장치는 프레임(110), 정렬스테이지(120), 하부챔버(131), 하정반(132), 상부챔버(135), 상정반(136), 상정반지지부(140) 및 구동부(150)를 포함한다. 1 is a perspective view showing a substrate bonding apparatus according to the present embodiment, Figure 2 is a cross-sectional view showing a substrate bonding apparatus according to the present embodiment. 1 and 2, the substrate bonding apparatus includes a frame 110, an alignment stage 120, a lower chamber 131, a lower plate 132, an upper chamber 135, an upper plate 136, and an upper ring. The branch 140 and the driving unit 150 is included.

프레임(110)은 복수로 마련되어 정렬스테이지(120)와 하부챔버(131)의 테두리부에 배치된다. The frame 110 is provided in plural and disposed at the edge of the alignment stage 120 and the lower chamber 131.

정렬스테이지(120)는 프레임(110)의 내측에 배치되어 프레임(110)에 지지된다. 정렬스테이지(120)는 구동부(150)를 지지하며, 구동부(150)를 도 1에 표기된 x축방향 및 y축방향으로 이동시킨다. 이러한 정렬스테이지(120)는 본 출원인에 의해 출원되어 공개된 "공개번호 10-2006-0055703;기판 합착기"에 개시된 바 있으므로, 상세한 설명은 생략하도록 한다.The alignment stage 120 is disposed inside the frame 110 and is supported by the frame 110. The alignment stage 120 supports the driving unit 150 and moves the driving unit 150 in the x-axis direction and the y-axis direction shown in FIG. 1. Since the alignment stage 120 has been disclosed in the "Publication No. 10-2006-0055703 (substrate bonding machine)" filed and published by the applicant, detailed description thereof will be omitted.

하부챔버(131)는 정렬스테이지(120)의 상측에 배치되어 프레임(110)에 지지된다. 하정반(132)은 하부챔버(131)의 내측에 배치되며, 하부챔버(131)에 지지된다. 하정반(132)은 챔버(130)의 내부로 반입되는 하부기판(S1)을 지지한다. The lower chamber 131 is disposed above the alignment stage 120 and supported by the frame 110. The lower plate 132 is disposed inside the lower chamber 131 and is supported by the lower chamber 131. The lower surface plate 132 supports the lower substrate S1 carried into the chamber 130.

상부챔버(135)는 하부챔버(131)의 상측에 배치되며, 하부챔버(131)와 함께 처리공간을 제공한다. 상부챔버(135)는 처리공간(130a)의 개방시 구동부(150)에 의해 지지되고, 처리공간(130a)의 밀폐시 하부챔버(131)에 지지된다. 상정반(136)은 상부챔버(135)의 내측에 배치되며, 상부챔버(135)로부터 이격된다. 도시되지 않았지만 하정반(132) 및 상정반(136)은 기판을 지지하는 진공척, 정전척, 마그네틱척 중 어느 하나를 각각 포함할 수 있다.The upper chamber 135 is disposed above the lower chamber 131 and provides a processing space together with the lower chamber 131. The upper chamber 135 is supported by the driving unit 150 when the processing space 130a is opened, and is supported by the lower chamber 131 when the processing space 130a is closed. The upper surface plate 136 is disposed inside the upper chamber 135 and spaced apart from the upper chamber 135. Although not shown, the lower plate 132 and the upper plate 136 may each include any one of a vacuum chuck, an electrostatic chuck, and a magnetic chuck supporting the substrate.

하정반(132)과 상정반의 사이에는 간격감지기(133)가 배치된다. 간격감지 기(133)는 두 기판(S1, S2)의 개략 정렬 이후 두 기판(S1, S2)의 정밀 정렬을 위한 두 기판(S1, S2)의 간격을 감지한다. 간격감지기(133)는 상정반의 승강에 따라 상정반(136)에 접촉되어 접촉신호를 발생시킨다. 이 접촉신호는 이후 설명될 구동모터(151)의 제어신호로 사용된다. 여기서, 도 1 내지 도 2에서는 간격감지기(133)를 접촉식 센서로 도시하고 설명하고 있으나, 다른 실시예로 비접촉식 센서로 채택될 수 있다. The gap detector 133 is disposed between the lower plate 132 and the upper plate. The gap detector 133 detects a gap between the two substrates S1 and S2 for precise alignment of the two substrates S1 and S2 after the rough alignment of the two substrates S1 and S2. The gap sensor 133 is in contact with the upper plate 136 in accordance with the lifting of the upper plate to generate a contact signal. This contact signal is used as a control signal of the drive motor 151 to be described later. Here, in FIGS. 1 and 2, the gap sensor 133 is illustrated and described as a contact sensor, but may be adopted as a non-contact sensor in another embodiment.

상정반지지부(140)는 지지판(141)과 지지축(142)을 포함한다. 지지판(141)은 상부챔버(135)의 외측에 배치되며, 상부챔버(135)로부터 이격된다. 지지축(142)은 지지판(141)으로부터 연장되고, 상부챔버(135)를 관통하여 상정반(136)에 체결된다. The upper half support part 140 includes a support plate 141 and a support shaft 142. The support plate 141 is disposed outside the upper chamber 135 and spaced apart from the upper chamber 135. The support shaft 142 extends from the support plate 141 and is fastened to the upper plate 136 through the upper chamber 135.

구동부(150)는 상부챔버(135)를 승강시켜 처리공간(130a)을 개폐시키며, 상정반지지부(140)를 승강시켜 하부기판(S1)에 대한 상부기판(S2)의 간격을 조절한다. 이러한 구동부(150)는 구동모터(151), 스크류(152), 승강부재(153) 및 승강가이드(154)를 포함한다. The driving unit 150 raises and lowers the upper chamber 135 to open and close the processing space 130a, and raises and lowers the upper support unit 140 to adjust the distance of the upper substrate S2 to the lower substrate S1. The driving unit 150 includes a driving motor 151, a screw 152, a lifting member 153, and a lifting guide 154.

구동모터(151)는 정렬스테이지(120)에 지지되며, 회전동력을 제공한다. 구동모터는 정회전 및 역회전이 가능하도록 마련된다. The drive motor 151 is supported by the alignment stage 120 and provides a rotational power. The drive motor is provided to enable forward and reverse rotation.

스크류(152)는 하부챔버(131)와 상부챔버(135)를 관통하며, 지지판(141)에 나사결합되어 지지판(141)을 지지한다. 스크류(152)는 구동모터(151)에 의해 회전되어 지지판(141)을 승강시킨다. 스크류(152)는 구동모터(151)의 정회전에 따라 정회전되어 지지판(141)을 상승시키며, 구동모터(151)의 역회전에 따라 역회전되어 지지판(141)을 하강시킨다. The screw 152 penetrates the lower chamber 131 and the upper chamber 135 and is screwed to the support plate 141 to support the support plate 141. The screw 152 is rotated by the drive motor 151 to elevate the support plate 141. The screw 152 is rotated forward according to the forward rotation of the drive motor 151 to raise the support plate 141, and is reversely rotated according to the reverse rotation of the drive motor 151 to lower the support plate 141.

승강부재(153)는 상부챔버(135)의 하측에 배치되어 스크류(152)에 나사결합된다. 승강부재(153)는 스크류(152)의 회전에 따라 승강된다. 승강부재(153)는 스크류(152)의 정회전시 상승되어 상부챔버(135)를 지지하여 상부챔버(135)를 상승시키며, 스크류(152)의 역회전시 하강되어 상부챔버(135)를 하부챔버(131) 측으로 하강시킨다. The elevating member 153 is disposed below the upper chamber 135 and screwed to the screw 152. The elevating member 153 is elevated by the rotation of the screw 152. The elevating member 153 is raised during forward rotation of the screw 152 to support the upper chamber 135 to raise the upper chamber 135, and is lowered during reverse rotation of the screw 152 to lower the upper chamber 135. Lower to (131) side.

승강부재(153)와 상부챔버(135)의 사이에는 완충부재(155)가 배치된다. 완충부재(155)는 스크류(152)의 회전에 따라 서로 접촉되는 상부챔버(135)와 승강부재(153)에 발생될 수 있는 충격을 완화시키며, 상부챔버(135) 및 승강부재(153)의 마모를 방지한다. A buffer member 155 is disposed between the elevating member 153 and the upper chamber 135. The shock absorbing member 155 mitigates the shock that may occur in the upper chamber 135 and the elevating member 153 which are in contact with each other according to the rotation of the screw 152, and the upper chamber 135 and the elevating member 153 Prevent wear.

승강가이드(154)는 하부챔버(131)에 고정되며, 승강부재(153), 상부챔버(135) 및 상정반지지부(140)를 관통한다. 승강가이드(154)는 스크류(152)에 나사결합된 상부챔버(135) 및 승강부재(153)가 스크류(152)의 회전에 따라 회전되지 않도록 하며, 상부챔버(135)와 승강부재(153)의 승강을 안내한다.The lifting guide 154 is fixed to the lower chamber 131 and penetrates the lifting member 153, the upper chamber 135, and the upper support part 140. The elevating guide 154 prevents the upper chamber 135 and the elevating member 153 screwed to the screw 152 from being rotated according to the rotation of the screw 152, and the upper chamber 135 and the elevating member 153. Guide your ascent to and from.

한편, 하부챔버(131)와 상부챔버(135)의 사이에는 처리공간(130a)의 밀폐시 하부챔버(131)와 상부챔버(135)의 사이로 처리공간(130a)의 기밀이 새어나가는 것을 방지하는 제1 기밀부재(134)가 배치된다. 제1 기밀부재(134)로는 오-링이 사용된다. Meanwhile, between the lower chamber 131 and the upper chamber 135 to prevent leakage of the airtightness of the processing space 130a between the lower chamber 131 and the upper chamber 135 when the processing space 130a is closed. The first hermetic member 134 is disposed. An o-ring is used as the first hermetic member 134.

또한, 지지판(141)과 상부챔버(135)의 사이에는 처리공간(130a)의 밀폐시 지지축(142)이 관통되는 관통홀(142a)로부터 처리공간(130a)의 기밀이 새어나가는 것 을 방지하는 제2 기밀부재(137)가 배치된다. 제2 기밀부재(137)로는 벨로우즈가 사용된다.In addition, between the supporting plate 141 and the upper chamber 135 to prevent leakage of the airtightness of the processing space 130a from the through hole 142a through which the support shaft 142 penetrates when the processing space 130a is closed. The second hermetic member 137 is disposed. Bellows are used as the second hermetic member 137.

도시되지 않았지만, 하부기판(S1)과 상부기판(S2)에는 두 기판(S1, S2)의 정렬을 위한 얼라인마크가 각각 형성되어 제공될 수 있으며, 기판합착장치는 두 얼라인마크의 일치여부를 촬영하는 카메라를 포함할 수 있다. 이러한 얼라인마크 및 카메라는 이미 공지된 기술이므로 상세한 설명은 생략하도록 한다. Although not shown, an alignment mark for aligning the two substrates S1 and S2 may be provided on the lower substrate S1 and the upper substrate S2, respectively, and the substrate bonding apparatus may be aligned with the two alignment marks. It may include a camera for photographing. Since the alignment mark and the camera are already known technologies, detailed descriptions thereof will be omitted.

이하, 본 실시예에 따른 기판처리장치의 작동에 대해 첨부된 도면을 참조하여 상세히 설명하도록 한다. Hereinafter, the operation of the substrate treating apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

도 3은 본 실시예에 따른 기판처리장치에서 처리공간이 개방된 상태를 나타낸 부분단면도이다. 도 3을 참조하면, 상부챔버(135)는 승강부재(153)에 지지되어 하부챔버(131)로부터 이격된다. 상부챔버(135)가 하부챔버(131)로부터 이격됨에 따라 처리공간(130a)은 개방된다. 개방된 처리공간(130a)으로 하부기판(S1)과 상부기판(S2)이 반입된다. 하부기판(S1)은 하정반(132)에 지지되고 상부기판(S2)은 상정반(136)에 지지되어 서로 대향한다.3 is a partial cross-sectional view showing a state in which a processing space is opened in the substrate processing apparatus according to the present embodiment. Referring to FIG. 3, the upper chamber 135 is supported by the elevating member 153 and spaced apart from the lower chamber 131. As the upper chamber 135 is spaced apart from the lower chamber 131, the processing space 130a is opened. The lower substrate S1 and the upper substrate S2 are loaded into the open processing space 130a. The lower substrate S1 is supported by the lower plate 132 and the upper substrate S2 is supported by the upper plate 136 to face each other.

도 4는 본 실시예에 따른 기판처리장치의 처리공간 밀폐 작동을 나타낸 부분단면도이다. 도 4를 참조하면, 처리공간(130a)의 밀폐를 위해 구동모터(151)는 스크류(152)를 역회전시킨다. 스크류(152)가 역회전됨에 따라 지지판(141)과 승강부재(153)는 함께 하강한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 하강을 안내한다.4 is a partial sectional view showing a process space sealing operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 4, the drive motor 151 reversely rotates the screw 152 to seal the processing space 130a. As the screw 152 is reversely rotated, the support plate 141 and the lifting member 153 are lowered together. In this case, the lifting guide 154 prevents the support plate 141 and the lifting member 153 from rotating, and guides the lowering of the support plate 141 and the lifting member 153.

승강부재(153)에 지지되는 상부챔버(135)는 승강부재(153)와 함께 하강된다. 상부챔버(135)는 제1 기밀부재(134)에 접촉되며, 하부챔버(131)에 의해 지지된다. 이와 같이 상부챔버(135)의 하강에 따라 처리공간(130a)은 밀폐되며 제1 기밀부재(134)는 처리공간(130a)의 기밀을 유지시킨다. The upper chamber 135 supported by the elevating member 153 is lowered together with the elevating member 153. The upper chamber 135 is in contact with the first hermetic member 134 and is supported by the lower chamber 131. As the upper chamber 135 descends as described above, the processing space 130a is sealed and the first airtight member 134 maintains the airtightness of the processing space 130a.

처리공간(130a)이 밀폐되면 두 기판(S1, S2)의 개략 정렬이 이루어진다. 즉, 카메라(미도시)는 두 얼라인마크(미도시)의 일치 여부를 촬영한다. 카메라(미도시)의 촬영결과에 따라 정렬스테이지(120)는 구동부(150)를 평면 상(x축방향 또는, y축방향)으로 이동시킨다. 구동부(150)의 위치가 이동됨에 따라 스크류(152)에 지지되는 지지판(141)의 위치가 이동되고, 지지판(141)의 위치가 이동됨에 따라 지지축(142)에 의해 지지되는 상정반(136)의 위치가 이동된다. When the processing space 130a is sealed, the two substrates S1 and S2 are roughly aligned. That is, the camera (not shown) photographs whether two alignment marks (not shown) coincide. According to the photographing result of the camera (not shown), the alignment stage 120 moves the driving unit 150 in the plane (x-axis direction or y-axis direction). As the position of the driving unit 150 is moved, the position of the support plate 141 supported by the screw 152 is moved, and the upper plate 136 supported by the support shaft 142 as the position of the support plate 141 is moved. ) Position is moved.

이와 같이 상정반(136)의 위치를 조절하여 하정반(132)에 지지되는 하부기판(S1)에 대한 상부기판(S2)의 위치를 조절하여 두 기판을 정렬한다. (이하, 기판 정렬동작)As such, by adjusting the position of the upper plate 136, the two substrates are aligned by adjusting the position of the upper substrate S2 with respect to the lower substrate S1 supported by the lower plate 132. (Hereinafter, substrate alignment operation)

도 5는 본 실시예에 따른 기판처리장치의 기판 간격조절 작동을 나타낸 부분단면도이다. 도 5를 참조하면, 두 기판(S1, S2)의 정밀 정렬을 위해 구동모터(151)는 스크류(152)를 역회전시킨다. 스크류(152)가 역회전됨에 따라 지지판(141)과 승강부재(153)는 함께 하강한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 하강을 안내한다.5 is a partial cross-sectional view showing a substrate gap adjusting operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 5, the drive motor 151 reversely rotates the screw 152 to precisely align the two substrates S1 and S2. As the screw 152 is reversely rotated, the support plate 141 and the lifting member 153 are lowered together. In this case, the lifting guide 154 prevents the support plate 141 and the lifting member 153 from rotating, and guides the lowering of the support plate 141 and the lifting member 153.

상부챔버(135)는 하부챔버(131)에 의해 지지된 상태이므로, 승강부재(153)는 하강되어 상부챔버(135)로부터 이격된다. 지지판(141)이 하강됨에 따라 지지 축(142)에 의해 지지되는 상정반(136)은 함께 하강한다. 상정반(136)이 하강됨에 따라 상정반(136)은 하정반(132)에 배치된 간격감지기(133)에 접촉된다. 간격감지기(133)는 접촉신호를 발생하며, 구동모터(151)는 접촉신호의 발생에 따라 회전이 정지된다. 이때 두 기판(S1, S2)의 간격은 수 ㎛ ~ 수백 ㎛ 로 형성된다.Since the upper chamber 135 is supported by the lower chamber 131, the elevating member 153 is lowered to be spaced apart from the upper chamber 135. As the support plate 141 is lowered, the upper plate 136 supported by the support shaft 142 descends together. As the upper plate 136 is lowered, the upper plate 136 is in contact with the gap sensor 133 disposed on the lower plate 132. The gap sensor 133 generates a contact signal, and the driving motor 151 is stopped from rotating according to the generation of the contact signal. At this time, the interval between the two substrates (S1, S2) is formed to a few μm ~ several hundred μm.

이와 같이 두 기판(S1, S2)이 근접하면 상술한 기판 정렬동작에 따라 두 기판의 정밀 정렬이 이루어진다. As such, when the two substrates S1 and S2 are close to each other, precise alignment of the two substrates is performed according to the substrate alignment operation described above.

두 기판(S1, S2)의 정밀 정렬이 이루어지면, 상정반(136)은 상부기판(S2)의 지지상태를 해제한다. 상부기판(S2)은 하부기판(S1)으로 자유낙하하여 하부기판(S1)에 접촉되고, 두 기판(S1, S2)은 합착된다. When the precise alignment of the two substrates (S1, S2) is made, the upper plate 136 releases the support state of the upper substrate (S2). The upper substrate S2 freely falls into the lower substrate S1 to contact the lower substrate S1, and the two substrates S1 and S2 are bonded to each other.

도 6은 본 실시예에 따른 기판처리장치의 처리공간 개방 동작을 나타낸 부분단면도이다. 도 6을 참조하면, 합착된 두 기판(S1, S2)의 반출을 위해 구동모터(151)는 스크류(152)를 정회전시킨다. 스크류(152)가 정회전됨에 따라 지지판(141)과 승강부재(153)는 함께 상승한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 상승을 안내한다. 6 is a partial cross-sectional view showing a processing space opening operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 6, the driving motor 151 rotates the screw 152 forward to carry out the two bonded substrates S1 and S2. As the screw 152 is rotated forward, the support plate 141 and the lifting member 153 ascend together. At this time, the lifting guide 154 prevents the support plate 141 and the lifting member 153 from rotating, and guides the rising of the support plate 141 and the lifting member 153.

스크류(152)의 정회전에 의해 상승하는 승강부재(153)는 상부챔버(135)에 접촉된다. 이때 완충부재(155)는 서로 접촉되는 상부챔버(135)와 승강부재(153)에 발생될 수 있는 충격을 완화시키며, 상부챔버(135) 및 승강부재(153)의 마모를 방지한다.The elevating member 153 rising by the forward rotation of the screw 152 is in contact with the upper chamber 135. In this case, the shock absorbing member 155 relieves the shock that may occur in the upper chamber 135 and the lifting member 153 in contact with each other, and prevents the wear of the upper chamber 135 and the lifting member 153.

상부챔버(135)에 접촉된 승강부재(153)는 스크류(152)의 정회전에 따라 계속 해서 상승하며, 상부챔버(135)는 승강부재(153)에 지지되어 승강부재(153)와 함께 상승한다. 상부챔버(135)의 상승에 따라 처리공간(130a)은 개방된다.The elevating member 153 in contact with the upper chamber 135 continues to rise according to the forward rotation of the screw 152, and the upper chamber 135 is supported by the elevating member 153 to ascend with the elevating member 153. . As the upper chamber 135 rises, the processing space 130a is opened.

이후, 합착된 두 기판(S1, S2)은 개방된 처리공간(130a)의 외부로 반출된다.Thereafter, the two bonded substrates S1 and S2 are carried out of the open processing space 130a.

상술한 바와 같이 기판합착장치는 구동부(150)에 의해 처리공간(130a)의 개폐와 두 기판(S1, S2)의 간격조절을 수행할 수 있다. As described above, the substrate bonding apparatus may perform opening / closing of the processing space 130a and adjusting spacing between the two substrates S1 and S2 by the driving unit 150.

도 1은 본 실시예에 따른 기판합착장치를 나타낸 사시도이다.1 is a perspective view showing a substrate bonding apparatus according to the present embodiment.

도 2는 본 실시예에 따른 기판합착장치를 나타낸 단면도이다.2 is a cross-sectional view showing a substrate bonding apparatus according to the present embodiment.

도 3은 본 실시예에 따른 기판처리장치에서 처리공간이 개방된 상태를 나타낸 부분단면도이다. 3 is a partial cross-sectional view showing a state in which a processing space is opened in the substrate processing apparatus according to the present embodiment.

도 4는 본 실시예에 따른 기판처리장치의 처리공간 밀폐 작동을 나타낸 부분단면도이다.4 is a partial sectional view showing a process space sealing operation of the substrate processing apparatus according to the present embodiment.

도 5는 본 실시예에 따른 기판처리장치의 기판 간격조절 작동을 나타낸 부분단면도이다.5 is a partial cross-sectional view showing a substrate gap adjusting operation of the substrate processing apparatus according to the present embodiment.

도 6은 본 실시예에 따른 기판처리장치의 처리공간 개방 동작을 나타낸 부분단면도이다.6 is a partial cross-sectional view showing a processing space opening operation of the substrate processing apparatus according to the present embodiment.

<도면의 주요부분에 대한 부호 설명><Description of Signs of Major Parts of Drawings>

110 : 프레임 120 : 정렬스테이지110: frame 120: alignment stage

130 : 챔버 131 : 하부챔버130: chamber 131: lower chamber

135 : 상부챔버 136 : 상정반135: upper chamber 136: upper plate

140 : 상정반지지부 141 : 지지판140: upper plate support 141: support plate

142 : 지지축 150 : 구동부142: support shaft 150: drive unit

152 : 스크류 154 : 승강부재 152: screw 154: lifting member

Claims (8)

하부기판을 지지하는 하부챔버;A lower chamber supporting the lower substrate; 상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;An upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; 상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;An upper plate disposed inside the upper chamber, spaced apart from the upper chamber, and supporting the upper substrate; 상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;및An upper half supporting part disposed outside the upper chamber and spaced apart from the upper chamber, and supporting the upper half through the upper chamber; and 상기 상부챔버를 승강시켜 상기 처리공간을 개폐시키며, 상기 상정반지지부를 승강시켜 상기 하부기판에 대한 상기 상부기판의 간격을 조절하는 구동부;를 포함하는 것을 특징으로 하는 기판합착장치.And a driving unit for elevating the upper chamber to open and close the processing space, and elevating the upper support unit to adjust a distance between the upper substrate and the lower substrate. 제1 항에 있어서, 상기 구동부는The method of claim 1, wherein the driving unit 회전동력을 제공하는 구동모터;A drive motor that provides rotational power; 상기 하부챔버와 상기 상부챔버를 관통하여 상기 상정반지지부에 나사결합되며, 상기 구동모터에 의해 회전되어 상기 상정반지지부를 승강시키는 스크류;A screw threaded through the lower chamber and the upper chamber to be screwed to the upper support half, and rotated by the driving motor to lift the upper support; 상기 상부챔버의 하부에 배치되어 상기 스크류에 나사결합되며, 상기 스크류의 회전에 따라 상기 상부챔버를 지지하여 상기 스크류의 회전에 따라 상기 상부챔버를 승강시키는 상기 승강부재;및The elevating member disposed under the upper chamber and screwed to the screw, supporting the upper chamber according to the rotation of the screw, and elevating the upper chamber according to the rotation of the screw; and 상기 하부챔버에 고정되고, 상기 승강부재, 상기 상부챔버 및 상기 상정반지지부를 관통하며, 상기 상부챔버와 상기 승강부재의 승강을 안내하는 승강가이드;를 더 포함하는 것을 특징으로 하는 기판합착장치.And an elevating guide fixed to the lower chamber and penetrating the elevating member, the upper chamber, and the upper half supporting portion to guide the elevating of the upper chamber and the elevating member. 제2 항에 있어서, 상기 구동부는 상기 상부챔버와 상기 승강부재의 사이에 배치되는 완충부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate bonding apparatus of claim 2, wherein the driving unit further comprises a buffer member disposed between the upper chamber and the elevating member. 제1 항에 있어서, 상기 하부챔버와 상기 상부챔버의 사이에 배치되는 제1 기밀부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate bonding apparatus of claim 1, further comprising a first hermetic member disposed between the lower chamber and the upper chamber. 제1 항에 있어서, 상기 상정반지지부는 The method of claim 1, wherein the support half support portion 상기 상부챔버의 상측에 배치되며, 상기 구동부에 의해 승강되는 지지판;및A support plate disposed above the upper chamber and lifted by the driving unit; and 상기 지지판으로부터 연장되며, 상기 상부챔버를 관통하여 상기 상정반에 체결되는 지지축을 포함하는 것을 특징으로 하는 기판합착장치.And a support shaft extending from the support plate and passing through the upper chamber and fastened to the upper plate. 제1 항에 있어서, 상기 지지판과 상기 상부챔버의 사이에 배치되는 제2 기밀부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The apparatus of claim 1, further comprising a second hermetic member disposed between the support plate and the upper chamber. 제1 항에 있어서, According to claim 1, 상기 하부챔버를 지지하는 프레임;및A frame supporting the lower chamber; and 상기 프레임에 지지되며, 상기 구동부를 평면 상에서 이동시키는 정렬스테이지를 더 포함하는 것을 특징으로 하는 기판합착장치.And an alignment stage supported by the frame and moving the driving unit on a plane. 제1 항에 있어서, 상기 상정반이 승강되는 경로에 배치되며, 상기 상정반의 위치를 감지하여 상기 하부기판과 상기 상부기판의 간격을 측정할 수 있도록 하는 간격감지기를 더 포함하는 것을 특징으로 하는 기판합착장치. The substrate of claim 1, further comprising a gap detector disposed on a path in which the upper plate is lifted and detecting a position of the upper plate to measure a distance between the lower substrate and the upper substrate. Cementing device.
KR1020080138517A 2008-12-31 2008-12-31 Apparatus for joining of substrate KR101111063B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080138517A KR101111063B1 (en) 2008-12-31 2008-12-31 Apparatus for joining of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080138517A KR101111063B1 (en) 2008-12-31 2008-12-31 Apparatus for joining of substrate

Publications (2)

Publication Number Publication Date
KR20100079920A true KR20100079920A (en) 2010-07-08
KR101111063B1 KR101111063B1 (en) 2012-02-16

Family

ID=42640957

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080138517A KR101111063B1 (en) 2008-12-31 2008-12-31 Apparatus for joining of substrate

Country Status (1)

Country Link
KR (1) KR101111063B1 (en)

Cited By (268)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101540054B1 (en) * 2012-12-28 2015-07-29 엘아이지인베니아 주식회사 Method and apparatus for bonding substrates
CN107665840A (en) * 2016-07-28 2018-02-06 Asm知识产权私人控股有限公司 Substrate-treating apparatus
WO2019021057A1 (en) * 2017-07-26 2019-01-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
KR20190090925A (en) * 2018-01-26 2019-08-05 주식회사 케이씨텍 Apparatus for Treating Substrate and the Method Thereof
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10604847B2 (en) 2014-03-18 2020-03-31 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10720322B2 (en) 2016-02-19 2020-07-21 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top surface
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10741385B2 (en) 2016-07-28 2020-08-11 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12025484B2 (en) 2019-04-29 2024-07-02 Asm Ip Holding B.V. Thin film forming method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200134708A (en) 2019-05-23 2020-12-02 삼성전자주식회사 Wafer bonding apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040063635A (en) * 2003-01-08 2004-07-14 주식회사 에이디피엔지니어링 Substrate pressing apparatus for use in LCD cell fabricating process

Cited By (335)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
KR101540054B1 (en) * 2012-12-28 2015-07-29 엘아이지인베니아 주식회사 Method and apparatus for bonding substrates
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10604847B2 (en) 2014-03-18 2020-03-31 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11956977B2 (en) 2015-12-29 2024-04-09 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US10720322B2 (en) 2016-02-19 2020-07-21 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top surface
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10741385B2 (en) 2016-07-28 2020-08-11 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
CN107665840A (en) * 2016-07-28 2018-02-06 Asm知识产权私人控股有限公司 Substrate-treating apparatus
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10943771B2 (en) 2016-10-26 2021-03-09 Asm Ip Holding B.V. Methods for thermally calibrating reaction chambers
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10644025B2 (en) 2016-11-07 2020-05-05 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US12000042B2 (en) 2016-12-15 2024-06-04 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11970766B2 (en) 2016-12-15 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10950432B2 (en) 2017-04-25 2021-03-16 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11976361B2 (en) 2017-06-28 2024-05-07 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
JP2020528496A (en) * 2017-07-26 2020-09-24 エーエスエム・アイピー・ホールディング・ベー・フェー Chemical deposition, treatment and / or infiltration equipment and how to use it
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
WO2019021057A1 (en) * 2017-07-26 2019-01-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11972944B2 (en) 2018-01-19 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
KR20190090925A (en) * 2018-01-26 2019-08-05 주식회사 케이씨텍 Apparatus for Treating Substrate and the Method Thereof
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US12020938B2 (en) 2018-03-27 2024-06-25 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11296189B2 (en) 2018-06-21 2022-04-05 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11411088B2 (en) 2018-11-16 2022-08-09 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11959171B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US12025484B2 (en) 2019-04-29 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11996304B2 (en) 2019-07-16 2024-05-28 Asm Ip Holding B.V. Substrate processing device
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US12033885B2 (en) 2021-01-04 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US12033861B2 (en) 2021-06-07 2024-07-09 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US12027365B2 (en) 2021-11-19 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US12033849B2 (en) 2022-12-08 2024-07-09 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane

Also Published As

Publication number Publication date
KR101111063B1 (en) 2012-02-16

Similar Documents

Publication Publication Date Title
KR101111063B1 (en) Apparatus for joining of substrate
KR101281123B1 (en) apparatus for attaching substrates of flat plate display element
KR101378072B1 (en) An apparatus for attaching substrates
US7864289B2 (en) Apparatus and method for attaching substrates
KR100994497B1 (en) Apparatus for joining of substrate and Method for joining of substrateusing the same
KR100961871B1 (en) Substrate assembling apparatus
KR100994494B1 (en) Apparatus for assembling substrates
KR100960816B1 (en) Apparatus for assembling substrates
KR100913220B1 (en) Apparatus for attaching substrates
KR101360117B1 (en) apparatus for attaching substrates and method for attaching substrates by using same
KR100931609B1 (en) Board Bonding Device
KR20080048637A (en) Apparatus for joining of substrate
KR101367663B1 (en) apparatus for attaching substrates of flat plate display element
JP2009282411A (en) Method and device for manufacturing liquid crystal display panel
JP2004309594A (en) Stuck substrate manufacturing apparatus, and stuck substrate manufacturing method
KR100915699B1 (en) Apparatus for assembling substrates
KR100890380B1 (en) Apparatus for assembling substrates
KR101990854B1 (en) Apparatus for Attaching Substrate and Method for Manufacturing Attached Substrate using the same
KR100643504B1 (en) Apparatus for attaching LCD glass and method thereof
KR100931602B1 (en) Board Bonding Device
KR100921996B1 (en) Apparatus for assembling substrates
KR101358952B1 (en) apparatus for attaching substrates
KR100917801B1 (en) Apparatus for attaching substrates
KR100921997B1 (en) Apparatus for attaching substrates
KR101540054B1 (en) Method and apparatus for bonding substrates

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150127

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee