JPH08181135A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH08181135A
JPH08181135A JP6320786A JP32078694A JPH08181135A JP H08181135 A JPH08181135 A JP H08181135A JP 6320786 A JP6320786 A JP 6320786A JP 32078694 A JP32078694 A JP 32078694A JP H08181135 A JPH08181135 A JP H08181135A
Authority
JP
Japan
Prior art keywords
film
insulating film
firing
oxide
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6320786A
Other languages
Japanese (ja)
Inventor
Takeaki Sugano
壮晃 菅野
Yukihiko Nishiyama
幸彦 西山
Hideji Fujii
秀治 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6320786A priority Critical patent/JPH08181135A/en
Priority to KR1019950072368A priority patent/KR960026379A/en
Priority to CN95110000A priority patent/CN1131343A/en
Publication of JPH08181135A publication Critical patent/JPH08181135A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate

Abstract

PURPOSE: To provide a method of manufacturing a semiconductor device having a high-insulation property dielectric film, which is high in insulation properties and has little leakage current in the vicinity of its interface. CONSTITUTION: A formed insulating oxide film is first oxidized with the mixed gas of water vapor and oxygen gas at a temperature of 1000 deg.C or lower. Whereby the film is put in a state that movable ions remain on the surface of the film. Then, a thermal oxidation process is performed on the film for removing the remaining ions. By performing in such a way, the acceleration of an oxidation of the internal layer part of the film and the improvement of the insulation properties of the surface layer part of the film are made. Thereby, a high- insulation property dielectric film, which is superior in breakdown strength characteristics and has little leakage current in its surface, is obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、特に高絶縁性誘電膜を有する半導体装置の製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device having a highly insulating dielectric film.

【０００２】[0002]

【従来の技術】半導体装置や液晶表示装置においては、
回路の絶縁性を確保するために、または半導体メモリー
の記憶容量やアクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘導体用に、例えば酸化シリコン、
窒化シリコン、酸化アルミニウムまたは酸化タンタルの
ような絶縁膜または誘電体膜が使用されている。2. Description of the Related Art In semiconductor devices and liquid crystal display devices,
In order to ensure the insulation of the circuit, or for the storage capacity of the semiconductor memory or for the dielectric of the auxiliary capacity of the pixel of the active matrix liquid crystal display device, for example, silicon oxide,
Insulating or dielectric films such as silicon nitride, aluminum oxide or tantalum oxide have been used.

【０００３】近年、半導体装置の高密度化や高集積化、
また液晶表示装置の高精細化が進むにつれ、その構成要
素の１つである、絶縁膜もしくは誘電体膜の微細化が課
題となる。上記微細化を行った場合は、誘電体の面積が
減少することになるが、当然それに伴って静電容量も減
少する。したがって、同等の静電容量を得るためには、
誘電体の膜厚を薄くするか誘電体の誘電率を上げなけれ
ばならない。しかしながら、膜厚を薄くすると耐圧が低
下するため、信頼性の問題から薄膜化には限界がある。In recent years, high density and high integration of semiconductor devices,
Further, as the definition of the liquid crystal display device becomes higher, miniaturization of an insulating film or a dielectric film, which is one of the constituent elements, becomes a problem. When the above-mentioned miniaturization is performed, the area of the dielectric material is reduced, but naturally the capacitance is also reduced accordingly. Therefore, to obtain an equivalent capacitance,
It is necessary to reduce the film thickness of the dielectric or increase the dielectric constant of the dielectric. However, if the film thickness is made thin, the withstand voltage will decrease, and there is a limit to thinning the film due to reliability problems.

【０００４】そこで、例えば高誘電率の酸化タンタルが
注目されている。この酸化タンタル膜は、その製造方法
として、例えば陽極酸化法などを用いる場合は、電子性
トラップや可動イオンの空間電荷分極の存在により、酸
化シリコン膜等に比べ漏れ電流も多く絶縁性が悪いこと
が知られている。また、製造方法に反応性スパッタ法を
用いる場合では、低級酸化物の増加により漏れ電流が増
加することが知られている。Therefore, for example, tantalum oxide having a high dielectric constant is receiving attention. When the tantalum oxide film is manufactured by using, for example, an anodic oxidation method, it has a large leakage current and a poor insulation property due to the presence of electronic traps and space charge polarization of mobile ions. It has been known. Further, it is known that when the reactive sputtering method is used as the manufacturing method, the leakage current increases due to the increase of the lower oxide.

【０００５】そのため、この酸化タンタル膜を半導体メ
モリーの記憶容量に用いた場合は消費電力の増加をもた
らし、また、アクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘電体もしくはガラス基板の保護絶
縁膜として用いた場合には表示不良につながるといった
不具合が生じてしまう。Therefore, when this tantalum oxide film is used for the storage capacity of a semiconductor memory, power consumption increases, and the dielectric of the auxiliary capacity of the pixel of the active matrix type liquid crystal display device or the protective insulation of the glass substrate. If it is used as a film, a defect such as display failure will occur.

【０００６】一方、酸化タンタルをはじめとして酸化ア
ルミニウムなどの金属酸化膜に対し、より高い絶縁性を
比較的簡単に与える試みとして、絶縁性誘電膜を成膜し
た後の後処理に熱酸化を用いる方法がある。On the other hand, thermal oxidation is used as a post-treatment after forming an insulating dielectric film in an attempt to relatively easily give a higher insulating property to a metal oxide film such as tantalum oxide and aluminum oxide. There is a way.

【０００７】[0007]

【発明が解決しようとする課題】上記の熱酸化法は、１
０００℃以下の温度で水蒸気を含む混合ガスによる熱酸
化方法（以後ウェット焼成と記す）と、上記ウェット焼
成において水蒸気の導入は行わずに乾燥ガスのみで熱酸
化を行う熱酸化法（以後ドライ焼成と記す）の２つに大
別される。このようなウェット焼成とドライ焼成とは、
従来においては、一般に熱酸化を行うとき、いずれか一
方が採用されている。The above-mentioned thermal oxidation method has the following problems.
A thermal oxidation method using a mixed gas containing water vapor at a temperature of 000 ° C. or lower (hereinafter referred to as wet firing), and a thermal oxidation method in which steam is not introduced in the wet firing and only dry gas is used (hereinafter referred to as dry firing). It is roughly divided into two. Such wet firing and dry firing are
Conventionally, when thermal oxidation is generally performed, either one is adopted.

【０００８】しかしながら、ウェット焼成を行う場合
は、酸素の空孔欠陥を補う酸化種がドライ焼成に比べて
絶縁膜に対し高い拡散速度をもっているため、膜の内層
部まで酸素の補給を促進できるが、膜の表層部に可動イ
オンが残留しやすく、膜そのものの絶縁性は向上する
が、膜表層部の絶縁性を保つことができず、その上に成
膜を施した場合、膜の界面での漏れ電流が増加してしま
うという不具合が生じてしまう。However, in the case of performing wet baking, the oxidizing species for compensating for oxygen vacancy defects have a higher diffusion rate to the insulating film than in dry baking, so that the supply of oxygen to the inner layer portion of the film can be promoted. , Mobile ions tend to remain on the surface layer of the film, and the insulation property of the film itself is improved, but the insulation property of the film surface layer part cannot be maintained. However, there is a problem that the leakage current increases.

【０００９】一方、ドライ焼成を行う場合は、酸化種の
膜に対する拡散速度が低下するため、膜内層部の酸素の
補給が不完全なものとなる。そのため、膜全体としての
絶縁性が低下し耐圧特性も悪くなる。On the other hand, when dry baking is performed, the rate of diffusion of the oxidizing species into the film decreases, so that the oxygen supply to the inner layer portion of the film becomes incomplete. Therefore, the insulating property of the entire film is lowered and the withstand voltage characteristic is also deteriorated.

【００１０】本発明は、このような従来技術の課題を解
決すべくなされたものであり、絶縁性が高く、かつ、界
面付近での漏れ電流の少ない高絶縁性誘電体膜を有する
半導体装置の製造方法を提供することを目的とする。The present invention has been made to solve the above problems of the prior art, and provides a semiconductor device having a highly insulating dielectric film having a high insulating property and a small leakage current near the interface. It is intended to provide a manufacturing method.

【００１１】[0011]

【課題を解決するための手段】本発明の半導体装置の製
造方法は、基板上に形成した酸化絶縁膜を、１０００℃
以下の温度で水蒸気と酸素とを含む混合ガスにより酸化
する工程と、酸化された酸化絶縁膜に存在する残留イオ
ンを除去して高絶縁性誘電膜にする工程とを具備し、そ
のことにより上記目的が達成される。According to a method of manufacturing a semiconductor device of the present invention, an oxide insulating film formed on a substrate is heated to 1000.degree.
It comprises a step of oxidizing with a mixed gas containing water vapor and oxygen at the following temperature, and a step of removing residual ions existing in the oxidized oxide insulating film to form a highly insulating dielectric film. The purpose is achieved.

【００１２】[0012]

【作用】本発明にあっては、成膜された酸化絶縁膜に対
して１０００℃以下の温度で、最初に水蒸気と酸素との
混合ガスによる酸化する。これにより、膜表面には可動
イオンが残留した状態となる。次に、その残留イオンを
除去するために、熱酸化プロセスを施す。このようにす
ることにより、酸化絶縁膜の内層部の酸化の促進と、膜
表層部の絶縁性の向上が行われる。よって、耐圧特性に
優れ、表面に漏れ電流の少ない高絶縁性誘電膜が得られ
る。In the present invention, the formed oxide insulating film is first oxidized by a mixed gas of water vapor and oxygen at a temperature of 1000 ° C. or less. As a result, mobile ions remain on the film surface. Next, a thermal oxidation process is performed to remove the residual ions. By doing so, the oxidation of the inner layer portion of the oxide insulating film is promoted and the insulating property of the film surface layer portion is improved. Therefore, it is possible to obtain a highly insulating dielectric film having excellent withstand voltage characteristics and a small leakage current on the surface.

【００１３】[0013]

【実施例】以下に、本発明の実施例を具体的に説明す
る。EXAMPLES Examples of the present invention will be specifically described below.

【００１４】本発明の適用例として、例えば液晶表示装
置のガラス基板上に設けられる薄膜トランジスタにおい
て、そのガラス基板上にベースコート絶縁膜が設けられ
る場合を一例に挙げて述べる。この場合、液晶表示装置
の表示品位を向上させるためには、そのベースコート絶
縁膜の性能として、ベースコート絶縁膜上に形成された
電極間の漏れ電流を防止し得るだけの絶縁性が要求され
る。As an application example of the present invention, for example, in a thin film transistor provided on a glass substrate of a liquid crystal display device, a case where a base coat insulating film is provided on the glass substrate will be described as an example. In this case, in order to improve the display quality of the liquid crystal display device, the performance of the base coat insulating film is required to be insulating enough to prevent a leakage current between the electrodes formed on the base coat insulating film.

【００１５】そこで、上記の内容を考慮し、ベースコー
ト絶縁膜に酸化タンタルと酸化アルミニウムとを用いた
ときの適用例を以下の実施例１と実施例２として記述す
る。 （実施例１）本実施例１は、ベースコート絶縁膜が酸化
タンタルの場合である。In view of the above, therefore, application examples in which tantalum oxide and aluminum oxide are used for the base coat insulating film will be described as the following Examples 1 and 2. (Example 1) In Example 1, the base coat insulating film is tantalum oxide.

【００１６】サンプルとしては、ガラス基板上に、スパ
ッタリングにより五酸化タンタルを３０００〜４０００
オングストローム形成したものを用いた。その基板に対
し、図１に示す本発明の熱処理を施した。具体的には、
常温から酸化タンタルが多結晶化を起こさない５００〜
６００℃まで昇温する間において、１５０℃〜６００℃
の間（図１におけるの期間）で水蒸気と酸素との混合
ガスを焼成炉の中に導入し、その後、その高温状態を１
〜２時間保持する間（図１におけるの期間）に、連続
して酸素の乾燥ガスを焼成炉の中に導入して焼成を行っ
た。その後、常温まで冷却を行った。As the sample, 3000 to 4000 tantalum pentoxide was sputtered on a glass substrate.
An angstrom-formed product was used. The substrate was subjected to the heat treatment of the present invention shown in FIG. In particular,
Tantalum oxide does not polycrystallize at room temperature 500 ~
150 ℃ ~ 600 ℃ while heating up to 600 ℃
During the period (in FIG. 1), a mixed gas of water vapor and oxygen is introduced into the firing furnace, and then the high temperature state is changed to 1
While being held for 2 hours (the period in FIG. 1), a dry gas of oxygen was continuously introduced into the firing furnace to perform firing. Then, it cooled to normal temperature.

【００１７】また、比較例として、本実施例１と同様の
炉内温度に変化させた状態で、図２に示すようにしてウ
ェット焼成を行い、図３に示すようにしてドライ焼成を
行った。ウェット焼成は、１５０〜６００℃の間（図２
におけるの期間）で水蒸気と酸素との混合ガスを焼成
炉の中に導入して焼成を行った。一方、ドライ焼成は、
１５０〜６００℃の間（図３におけるの期間）で酸素
の乾燥ガスを焼成炉の中に導入して焼成を行った。Further, as a comparative example, wet firing was performed as shown in FIG. 2 and dry firing was performed as shown in FIG. . Wet firing is performed between 150 and 600 ° C. (see FIG.
During the period (1), a mixed gas of water vapor and oxygen was introduced into the firing furnace to perform firing. On the other hand, dry firing
The firing was performed by introducing a dry gas of oxygen into the firing furnace between 150 and 600 ° C. (the period in FIG. 3).

【００１８】次に、以上のようにしてガラス基板上に形
成された、本発明を含めた３種のベースコート絶縁膜の
上に、図４に示すように、電極３と絶縁膜４と電極５と
をベースコート絶縁膜２側からこの順に形成し、第１の
評価を行った。なお、図４中の１は、ガラス基板であ
る。その第１の評価としては、電極３と５に２０Ｖの電
圧を加えたときのリーク電流を測定した。この測定は、
評価対象のベースコート絶縁膜２と絶縁膜３との界面の
絶縁性、つまりベースコート絶縁膜２の表層部の絶縁特
性に関するものであり、この部分のリーク電流が時間に
対し大幅な増加傾向を示すと、絵素の補助容量電極等と
のリークを引き起こし表示不良の原因となる。Next, as shown in FIG. 4, an electrode 3, an insulating film 4 and an electrode 5 are formed on the three kinds of base coat insulating films including the present invention formed on the glass substrate as described above. And were formed in this order from the base coat insulating film 2 side, and the first evaluation was performed. In addition, 1 in FIG. 4 is a glass substrate. As the first evaluation, the leak current when a voltage of 20 V was applied to the electrodes 3 and 5 was measured. This measurement is
It relates to the insulating property of the interface between the base coat insulating film 2 and the insulating film 3 to be evaluated, that is, the insulating property of the surface layer portion of the base coat insulating film 2, and that the leakage current of this part shows a significant increasing tendency with time. This causes leakage of picture elements with the auxiliary capacitance electrodes and the like, which causes display failure.

【００１９】図５は、そのリーク電流の測定結果を示す
グラフである。横軸に時間Ｔ（ｈｏｕｒ）をとり、縦軸
に電流Ｉ（Ａ／ｍｍ2）をとっている。図中の（ａ）は
ウェット焼成の場合、（ｂ）は本実施例の場合、（ｃ）
はドライ焼成の場合である。FIG. 5 is a graph showing the measurement results of the leak current. The horizontal axis represents time T (hour), and the vertical axis represents current I (A / mm 2 ). In the figure, (a) is for wet firing, (b) is for this embodiment, (c).
Is the case of dry firing.

【００２０】リーク電流の変化を見ると、本実施例によ
る処理では、ドライ焼成とほぼ同等のレベルでリーク電
流が減少傾向を示しており、水蒸気と酸素との混合ガス
を導入したことによる、膜表層部における可動イオンの
残留がないことがわかる。Looking at the change in leak current, in the treatment according to the present embodiment, the leak current shows a decreasing tendency at a level almost equal to that in dry firing, and the film formed by introducing the mixed gas of water vapor and oxygen was examined. It can be seen that there are no mobile ions remaining in the surface layer.

【００２１】更に、図６に示すような液晶パネルを作製
して第２の評価を行った。この液晶パネルは、上記ガラ
ス基板１の上に形成されたベースコート絶縁膜２の上
に、電極１３、二層の絶縁膜１４と１５および配向膜１
６を形成したものと、別のガラス基板１の上に電極１８
と配向膜１６とがこの順に形成されたものとを、間に液
晶材料１７を挟んで対向配設した構造である。第２の評
価の内容としては、液晶材料１７の電流効果を利用して
電極１３と１８との間に０秒から３０秒まで−４Ｖの電
圧を印加し、３０秒から１００秒まで電圧を印加せずに
放置した時の、隣合う電極１３同士の間にチャージされ
る電荷について定性的に評価を行った。つまり、評価対
象であるベースコート絶縁膜２の絶縁性が低いと、隣合
う電極１３同士の間にリーク電流が生じ電荷がチャージ
されることにより、図６中に示す透過率測定領域にも電
圧がかかることになり、液晶の透過率に変化が起こる。
このような電荷のチャージが起こると、液晶の異常配向
の原因となる可能性が高く、表示不良につながることが
ある。Further, a liquid crystal panel as shown in FIG. 6 was prepared and a second evaluation was conducted. In this liquid crystal panel, an electrode 13, two layers of insulating films 14 and 15 and an alignment film 1 are formed on a base coat insulating film 2 formed on the glass substrate 1.
6 and the glass substrate 1 and the electrode 18
And an alignment film 16 formed in this order are arranged opposite to each other with a liquid crystal material 17 interposed therebetween. The content of the second evaluation is that a voltage of -4 V is applied between the electrodes 13 and 18 for 0 to 30 seconds and a voltage is applied for 30 to 100 seconds by utilizing the current effect of the liquid crystal material 17. The charge charged between the adjacent electrodes 13 when left alone was qualitatively evaluated. That is, when the insulating property of the base coat insulating film 2 to be evaluated is low, a leak current is generated between the adjacent electrodes 13 and charges are charged, so that a voltage is also applied to the transmittance measurement region shown in FIG. As a result, the transmittance of the liquid crystal changes.
The occurrence of such electric charge is highly likely to cause abnormal alignment of liquid crystal, which may lead to display failure.

【００２２】図７は、その評価結果を示すグラフであ
り、（ａ）はウェット焼成の場合、（ｂ）は本実施例の
場合、（ｃ）はドライ焼成の場合である。FIG. 7 is a graph showing the evaluation results. (A) shows the case of wet firing, (b) shows the case of this embodiment, and (c) shows the case of dry firing.

【００２３】測定結果より、本実施例の焼成条件では透
過率に変化は起こっていない。これは隣合う電極１３同
士の間に電荷のチャージが起きず、ウェット焼成と同レ
ベル程度まで膜内層部の酸素の補給が促進したといえ
る。From the measurement results, the transmittance did not change under the firing conditions of this example. It can be said that this is because no charge was generated between the adjacent electrodes 13 and the supply of oxygen to the inner layer portion of the film was promoted to the same level as in wet firing.

【００２４】以上の２種類の第１、第２の評価の結果よ
り、本実施例による場合には、酸化絶縁膜の膜内層部の
酸素補給の促進と共に、膜表層部の可動イオンの除去を
行うことが可能となる。したがって、本発明は画期的な
方法といえる。From the results of the above-mentioned two kinds of first and second evaluations, in the case of this embodiment, the oxygen supplementation of the inner layer portion of the oxide insulating film is promoted and the mobile ions of the surface portion of the film are removed. It becomes possible to do. Therefore, the present invention can be said to be an epoch-making method.

【００２５】（実施例２）本実施例２は、ベースコート
絶縁膜が酸化アルミニウムの場合である。Example 2 In Example 2, the base coat insulating film is aluminum oxide.

【００２６】サンプルとしては、ガラス基板上に、スパ
ッタリングにより酸化アルミニウムを３０００〜４００
０オングストローム形成したものを用いた。その基板に
対し、実施例１と同様にして本発明を含む３種類の焼成
を施した。その後、以上のように焼成を行ったものに対
し、実施例１と同様の２種類の第１、第２の評価を行っ
た。As a sample, aluminum oxide of 3000 to 400 is sputtered on a glass substrate.
A film having 0 Å formed was used. The substrate was subjected to three kinds of firing including the present invention in the same manner as in Example 1. After that, the two types of first and second evaluations similar to those in Example 1 were performed on the thus baked product.

【００２７】図８は、図４に示した状態で第１の評価を
行った結果であり、図９は図６に示した液晶パネルにし
た状態で第２の評価を行った結果である。両図とも、
（ａ）がウェット焼成の場合、（ｂ）が本実施例２の場
合、（ｃ）がドライ焼成の場合である。FIG. 8 shows the result of the first evaluation in the state shown in FIG. 4, and FIG. 9 shows the result of the second evaluation in the state of the liquid crystal panel shown in FIG. Both figures
(A) shows the case of wet firing, (b) shows the case of the second embodiment, and (c) shows the case of dry firing.

【００２８】これら図８および図９より理解されるよう
に、酸化タンタルの場合と同様に本発明の優位性がうか
がえる。As can be seen from FIGS. 8 and 9, the superiority of the present invention can be seen as in the case of tantalum oxide.

【００２９】なお、上記各実施例において焼成炉の最高
加熱温度を６００℃としているが、これはガラス基板の
歪点からくる耐加熱温度と、金属酸化膜が非晶質から多
結晶化が起こらないための最高温度を考慮したからであ
り、本発明は基板の耐加熱温度がもっと高い場合、かつ
膜の結晶化が起こる温度を上げる処理を施した場合によ
り高い加熱温度で加熱することが可能となる。その場合
でも、加熱温度は１０００℃以下に限定する。その理由
は、生産上のボトルネックとなる昇温、降温に要する時
間をできるだけ削減し装置処理能力を向上させること
と、プロセスにおける消費エネルギーの増大を防ぐこと
で生産コストの低減を図るためである。In each of the above examples, the maximum heating temperature of the firing furnace is set to 600 ° C., but this is due to the heat resistance temperature due to the strain point of the glass substrate and the amorphous state of the metal oxide film causing polycrystallization. This is because the maximum temperature for the heating is taken into consideration, so that the present invention can heat at a higher heating temperature when the substrate has a higher heat resistance temperature and when a treatment for increasing the temperature at which the film is crystallized is performed. Becomes Even in that case, the heating temperature is limited to 1000 ° C. or lower. The reason for this is to reduce the time required for temperature rise and fall, which are bottlenecks in production, as much as possible to improve the processing capacity of the device, and to prevent the increase of energy consumption in the process, thereby reducing the production cost. .

【００３０】また、上記各実施例において、残留イオン
を除去する処理方法として酸素ガスを導入する方法を用
いているが、ＵＶオゾン処理や酸素プラズマ処理などの
方法も採用することが可能である。但し、それに伴う装
置および運用コストの増加や処理プロセスの複雑化とい
う点で考慮すると、上述した各実施例のように単純焼成
を基本プロセスとして用いる場合の方が上記の点での優
位性が認められる。In each of the above embodiments, the method of introducing oxygen gas is used as the processing method for removing the residual ions, but methods such as UV ozone processing and oxygen plasma processing can also be adopted. However, in consideration of the increase in equipment and operating costs associated therewith and the complexity of the treatment process, the advantage in the above point is recognized when the simple firing is used as the basic process as in each of the above-described embodiments. To be

【００３１】また、上記各実施例では液晶表示装置のガ
ラス基板上に設けられる薄膜トランジスタにおいて、そ
のガラス基板上にベースコート絶縁膜が設けられる場合
を一例に挙げて説明しているが、本発明はこの例に限ら
ず、基板上に形成された絶縁膜が高絶縁性を必要とする
総ての場合に適用できる。In each of the above-described embodiments, the case where the base coat insulating film is provided on the glass substrate of the thin film transistor provided on the glass substrate of the liquid crystal display device is described as an example. The present invention is not limited to the example, and can be applied to all cases in which the insulating film formed on the substrate requires high insulation.

【００３２】[0032]

【発明の効果】以上詳述したように本発明による場合に
は、酸化絶縁膜形成後の後処理として１０００℃以下の
温度で水蒸気と酸素とを含む混合ガスにより酸化する工
程と、残留イオンを除去する工程とを連続して行うこと
により、従来の熱酸化法では得られなかった、膜表層部
に残留可動イオンがなく、膜内層部の空孔欠陥を十分に
酸素で補った高絶縁性の酸化絶縁膜が、比較的簡単な方
法によって得られるという効果がある。従って、本発明
によれば、酸化絶縁膜を有した半導体装置をはじめ、半
導体装置を有した液晶表示装置の品質および製造歩留り
を比較的容易に、かつ、より単純なプロセスで向上させ
ることができる。As described above in detail, in the case of the present invention, as a post-treatment after the formation of the oxide insulating film, a step of oxidizing with a mixed gas containing water vapor and oxygen at a temperature of 1000 ° C. or less and residual ions are removed. By performing the removal process continuously, there is no residual mobile ion in the surface layer of the film, which was not obtained by the conventional thermal oxidation method, and the vacancy defects in the film inner layer are sufficiently supplemented with oxygen to provide high insulation properties. There is an effect that the above-mentioned oxide insulating film can be obtained by a relatively simple method. Therefore, according to the present invention, it is possible to improve the quality and manufacturing yield of a liquid crystal display device having a semiconductor device including a semiconductor device having an oxide insulating film relatively easily and by a simpler process. .

【図面の簡単な説明】[Brief description of drawings]

【図１】本実施例１および２により、酸化絶縁膜に対し
て焼成を行った時の温度プロファイルとガス導入時期と
を示すグラフである。FIG. 1 is a graph showing a temperature profile and a gas introduction timing when firing an oxide insulating film according to Examples 1 and 2.

【図２】従来法であるウェット焼成により、酸化絶縁膜
に対して焼成を行った時の温度プロファイルとガス導入
時期とを示すグラフである。FIG. 2 is a graph showing a temperature profile and a gas introduction timing when baking is performed on an oxide insulating film by wet baking which is a conventional method.

【図３】従来法であるドライ焼成により、酸化絶縁膜に
対して焼成を行った時の温度プロファイルとガス導入時
期とを示すグラフである。FIG. 3 is a graph showing a temperature profile and a gas introduction timing when baking is performed on an oxide insulating film by dry baking which is a conventional method.

【図４】実施例１および２において、第１の評価を行う
場合の構成を示す断面図であり、ベースコート絶縁膜２
の表層部の漏れ電流の測定系を示す。FIG. 4 is a cross-sectional view showing a configuration in a case where the first evaluation is performed in Examples 1 and 2, and a base coat insulating film 2
The measurement system of the leakage current of the surface layer part of is shown.

【図５】実施例１における第１の評価結果であり、図４
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化タンタルからなるベースコート絶縁膜
２の表層を流れる漏れ電流の経時変化を示すグラフであ
る。5 is a first evaluation result in Example 1, and FIG.
7 is a graph showing a change with time of a leakage current flowing through a surface layer of a base coat insulating film 2 made of tantalum oxide, which is an evaluation target, when a DC voltage of 20 V is applied to electrodes 3 and 5 therein.

【図６】実施例１および２において、第２の評価を行う
場合の構成である液晶パネルを示す断面図であり、隣合
う電極１３同士の間にチャージされる電荷について、液
晶材料の電流効果による光の散乱を利用して定性評価を
行う測定系を示す。FIG. 6 is a cross-sectional view showing a liquid crystal panel that is a configuration in the case of performing the second evaluation in Examples 1 and 2, and shows the current effect of the liquid crystal material with respect to the charge charged between adjacent electrodes 13. A measurement system for performing qualitative evaluation by utilizing the scattering of light by is shown.

【図７】実施例１（ベースコート絶縁膜が酸化タンタ
ル）における第２の評価結果であり、図６の電極１３と
１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を印
加し、３０秒から１００秒まで電圧を印加せずに放置し
たときの、０秒から１００秒までの図６中の透過率測定
領域の透過率の経時変化を示したグラフである。FIG. 7 is a second evaluation result in Example 1 (base coat insulating film is tantalum oxide), in which a DC voltage of −4 V is applied between the electrodes 13 and 18 of FIG. 6 from 0 seconds to 30 seconds; FIG. 7 is a graph showing a change with time in the transmittance of the transmittance measurement region in FIG. 6 from 0 seconds to 100 seconds when left for 30 seconds to 100 seconds without applying a voltage.

【図８】実施例２における第１の評価結果であり、図４
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化アルミニウムからなるベースコート絶
縁膜２の表層を流れる漏れ電流の経時変化を示すグラフ
である。8 is a first evaluation result in Example 2, and FIG.
7 is a graph showing a change with time of a leakage current flowing through a surface layer of a base coat insulating film 2 made of aluminum oxide, which is an evaluation target, when a DC voltage of 20 V is applied to electrodes 3 and 5 therein.

【図９】実施例２（ベースコート絶縁膜が酸化アルミニ
ウム）における第２の評価結果であり、図６の電極１３
と１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を
印加し、３０秒から１００秒まで電圧を印加せずに放置
したときの、０秒から１００秒までの図６中の透過率測
定領域の透過率の経時変化を示したグラフである。9 is a second evaluation result in Example 2 (the base coat insulating film is aluminum oxide), which shows the electrode 13 of FIG.
When a DC voltage of -4 V is applied between 0 and 30 seconds for 0 to 30 seconds and left without applying a voltage for 30 seconds to 100 seconds, the transmission in FIG. 6 from 0 seconds to 100 seconds It is a graph which showed the time-dependent change of the transmittance of a rate measurement region.

【符号の説明】[Explanation of symbols]

１ ガラス基板 ２ ベースコート絶縁膜 ３ 電極 ４ 絶縁膜 ５ 電極 １３ 電極 １４ 絶縁膜 １５ 絶縁膜 １６ 配向膜 １７ 液晶材料 １８ 電極 1 glass substrate 2 base coat insulating film 3 electrode 4 insulating film 5 electrode 13 electrode 14 insulating film 15 insulating film 16 alignment film 17 liquid crystal material 18 electrode

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 基板上に形成した酸化絶縁膜を、１００
０℃以下の温度で水蒸気と酸素とを含む混合ガスにより
酸化する工程と、 酸化された酸化絶縁膜に存在する残留イオンを除去して
高絶縁性誘電膜にする工程とを具備する半導体装置の製
造方法。1. An oxide insulating film formed on a substrate is coated with 100
A semiconductor device comprising: a step of oxidizing a mixed gas containing water vapor and oxygen at a temperature of 0 ° C. or lower; and a step of removing residual ions existing in the oxidized oxide insulating film to form a highly insulating dielectric film. Production method.
JP6320786A 1994-12-22 1994-12-22 Manufacture of semiconductor device Withdrawn JPH08181135A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6320786A JPH08181135A (en) 1994-12-22 1994-12-22 Manufacture of semiconductor device
KR1019950072368A KR960026379A (en) 1994-12-22 1995-12-21 Manufacturing Method of Semiconductor Device
CN95110000A CN1131343A (en) 1994-12-22 1995-12-22 Method for producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6320786A JPH08181135A (en) 1994-12-22 1994-12-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH08181135A true JPH08181135A (en) 1996-07-12

Family

ID=18125232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6320786A Withdrawn JPH08181135A (en) 1994-12-22 1994-12-22 Manufacture of semiconductor device

Country Status (3)

Country Link
JP (1) JPH08181135A (en)
KR (1) KR960026379A (en)
CN (1) CN1131343A (en)

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