US20010007246A1 - Thin-film deposition apparatus - Google Patents
Thin-film deposition apparatus Download PDFInfo
- Publication number
- US20010007246A1 US20010007246A1 US09/749,681 US74968100A US2001007246A1 US 20010007246 A1 US20010007246 A1 US 20010007246A1 US 74968100 A US74968100 A US 74968100A US 2001007246 A1 US2001007246 A1 US 2001007246A1
- Authority
- US
- United States
- Prior art keywords
- chamber
- deposition
- substrate
- temperature
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Object of the invention is to present a thin-film deposition apparatus comprising a practical means of heating not by the radiation heating, which is suitable for manufacture of solar cells. To accomplish this object, a thin-film deposition apparatus of the invention comprises a deposition chamber which is a vacuum chamber where thin-film deposition is carried out on a substrate at a deposition temperature higher than room temperature, a load lock chamber which is a vacuum chamber where the substrate stays temporarily while it is transferred from an atmosphere to the deposition chamber, and a heat chamber which heats the substrate under atmospheric pressure or a pressure higher than the atmospheric pressure. The heat chamber, the load lock chamber and the deposition chamber are connected directly or indirectly in this order interposing a valve. The heat chamber has a mechanism to heat the substrate supplying gas of a temperature higher than the room temperature by forced convection. The heating mechanism heats the substrate at a temperature higher than the deposition temperature. A temperature-decrease prevention mechanism which prevents the substrate temperature from decreasing lower than the deposition temperature is provided in the load lock chamber.
Description
- The invention of this application relates to a thin-film deposition apparatus suitably used for manufacture of solar cells. Thin-film deposition apparatuses, which deposit a thin-film on a substrate, are widely used for manufacture of electronic devices such as LSIs (large-scale integrated circuits) and display devices such as liquid crystal displays. In addition, thin-film deposition apparatuses may be used for manufacture of solar cells.
- Though solar cell technology has been made into practical use in electronic calculators conventionally, now it is expected very much as electric power generating technology under increase of energy problems, as observed in the New Sunshine Program of the MITI (Ministry of International Trade and Industry).
- Solar cells are divided into two kinds. One is silicon solar cell. The other one is compound semiconductor solar cell. Though the silicon solar cell includes crystallized solar cells such as single crystalline silicon solar cells and poly-crystalline silicon solar sells, much effort has been done to make amorphous silicon solar cell practical. This is because the semiconductor layers in the amorphous silicon solar cell could be thinner because of its higher light absorption coefficient, as well as its lower manufacturing cost. In addition, the amorphous solar cell has no worry of resource exhaustion since it utilizes gas sources, contrarily the crystal silicon that is the resource of the crystal silicon solar cell is limited since it is raw material.
- In manufacture of the amorphous solar cell, it is necessary to deposit a thin-film on a substrate made of glass, metals or resin. Therefore, a thin-film deposition apparatus is used. In manufacture of an amorphous silicon solar cell that is the typical amorphous solar cell, technique of plasma enhanced chemical vapor deposition (CVD) using gas mixture of silane and hydrogen is often adopted. For example, a hydrogenated amorphous silicon film is deposited on a substrate, by generating a HF discharge of the gas mixture of silane and hydrogen and utilizing decomposition of silane thereby.
- In thin-film deposition apparatuses, temperature of a substrate that is maintained at a specified value during deposition, hereinafter called “deposition temperature”, is often higher than room temperature. In CVD, the deposition temperature is set higher than the room temperature on purpose that the final reaction could take place by thermal energy, or, the deposition rate and the film quality could be enhanced. Therefore, process of heating the substrate prior to the deposition is required.
- A heat chamber in which radiation lamp-heaters are provided is usually used for heating the substrate. The heat chamber is connected airtightly with a deposition chamber interposing a valve. The substrate is heated in the heat chamber up to the deposition temperature in vacuum, and is transferred to the deposition chamber for the film deposition. The reason why the radiation heating is employed is that internal environment of the apparatus is often a vacuum pressure of about 10 Pa or lower, where heat transfer by conduction and convection cannot be expected.
- A load lock chamber is often connected with the deposition chamber so that the deposition chamber may not be opened directly to the atmosphere. The load loch chamber is sometimes commonly used as the heating chamber by providing radiation lamp-heaters in it.
- However, the above-described radiation heating has problems as follows.
- First of all, the radiation heating has a problem that the running cost is high because heating efficiency of the radiation heating is worse than other heating methods. In addition, when a larger substrate is employed, which often happens in the solar cell manufacture, increase of the apparatus cost becomes remarkable because many longer radiation lamp-heaters must be provided. Moreover, it is required to consider the matter of energy-payback-time reduction, which means manufacturing a solar cell using energy smaller enough than electric energy generated by the solar cell itself. In this point, the radiation heating does not satisfy this request because the energy consumption easily increases in manufacturing.
- In addition, the radiation heating has the problem of the overshoot in case a feed-back-control of the substrate temperature is carried out, because the substrate temperature rapidly rises up when the substrate is begun to be irradiated. The substrate temperature may settle down at a target value, after exceeding it greatly. If the overshoot happens, much thermal stress is provided to the substrate and at the worst the substrate might be deformed or fractured, or stress might remain in the substrate.
- In addition, it is important to improve accuracy of the temperature control of the substrate during the heating for securing the film quality and the reproducibility. However, it is difficult to control the substrate temperature with high accuracy in the radiation heating. For a high-accuracy control, it is preferable to measure the substrate temperature by a radiation thermometer because of its high-performance. Contrarily, it is difficult to measure the substrate temperature by the radiation thermometer during the radiation heating, because infrared rays reflect on the substrate surface, other than radiant rays proper to the substrate temperature.
- It is also possible to measure the substrate temperature by a thermocouple. However, in many cases, it is impossible to make the thermocouple contact with the substrate. The thermocouple is not suitable for high-accuracy temperature measurement. Especially, when the substrate is placed in a vacuum, the measurement accuracy of the thermocouple decreases, resulting from that temperature difference may occur at the contact points of the substrate and the thermocouple because the atmospheric temperature equalization by the convection cannot be expected.
- In addition, the radiation heating has an essential problem in the solar cell manufacturing. In structure of solar cells, at least one side of a photovoltaic layer needs an optical transparent electrode. For example, in the manufacture of amorphous silicon solar cells, the amorphous silicon film is often deposited on a TCO (Transparent Conductive Oxide) film formed on the substrate. Here, what is problem is that the TCO film has a characteristic of high infrared-ray reflectivity. Therefore, it is essentially impossible to heat the substrate having the TCO film on it by means of the radiation heating with enough efficiency.
- Other than the radiation heating, there is a method utilizing the heat conduction. In this method, a plate with high thermal conductivity is made contact with the substrate at its backside. This plate is hereinafter called “backing plate”. When the backing plate is heated, the substrate is heated through heat transfer by the conduction from the backing plate to the substrate. However, this method cannot be employed in case the backing plate is not used considering the energy-payback-time reduction. In addition, it is difficult to make the baking plate contact with the substrate sufficiently and uniformly. This brings disadvantage that highly efficient and uniform heating is impossible to the backing plate method.
- In addition, by the backing plate method, the substrate is heated only from its backside. As a result, temperature difference in the direction along the substrate thickness easily occurs with thick substrates. Worse, the substrate may suffer a thermal deformation before it is heated up to a required temperature.
- There may be another method where the substrate is heated from both sides by radiation. Even if this method is adopted, it is difficult to keep a balance of heating from both sides because the TCO film that hardly absorbs infrared rays exists on one side of the substrate. Particularly, if this method is carried out placing the substrate under a vacuum pressure, it is almost impossible to heat the substrate from both sides because heat transfer by the convection and the conduction cannot be expected.
- Object of this invention is to solve problems described above.
- To accomplish this object, the invention presents a thin-film deposition apparatus, comprising; a deposition chamber which is a vacuum chamber where thin-film deposition is carried out on a substrate at a deposition temperature higher than room temperature, and a heat chamber connected directly or indirectly with the deposition chamber, wherein the heat chamber is one which heats the substrate under the atmospheric pressure or a pressure higher than the atmospheric pressure, and has a mechanism to heat the substrate supplying gas of a temperature higher than the room temperature by forced convection.
- To accomplish this object, the invention also presents a thin-film deposition apparatus, comprising; a deposition chamber which is a vacuum chamber where thin-film deposition is carried out on a substrate at a deposition temperature higher than room temperature, a load lock chamber which is a vacuum chamber where the substrate stays temporarily while the substrate is transferred from the atmosphere to the deposition chamber, and a heat chamber which heats the substrate under the atmospheric pressure or a pressure higher than the atmospheric pressure, wherein the heat chamber, the load lock chamber and the deposition chamber are connected directly or indirectly in this order interposing a valve, and the heat chamber has a mechanism to heat the substrate supplying gas of a temperature higher than the room temperature by forced convection.
- FIG. 1 shows a front sectional view of a thin-film deposition apparatus that is an embodiment of the invention.
- FIG. 2 shows a side schematic view of a transfer mechanism5.
- FIG. 3 shows a side schematic view of a
deposition chamber 1. - FIG. 4 shows a side schematic view of a
heat chamber 3. - FIG. 5 shows a side schematic view of a
load lock chamber 2. - Preferred embodiments of this invention are described as follows.
- FIG. 1 shows a front sectional view of a thin-film deposition apparatus as a preferred embodiment of this invention. The apparatus shown in FIG. 1 comprises a
deposition chamber 1 where a thin-film deposition is carried out onsubstrates 9 at a deposition temperature higher than room temperature, a couple ofload lock chamber 2 and unloadrock chamber 20 wheresubstrates 9 stay temporarily whilesubstrates 9 are transferred betweendeposition chamber 1 and an atmosphere, aheat chamber 3 which heatssubstrates 9 under a pressure higher than the atmospheric pressure.Heat chamber 3, loadlock chamber 2,deposition chamber 1 and unloadrock chamber 20 are connected airtightly in thisorder interposing valves 4. A transfer mechanism 5 which transferssubstrates 9 between the atmosphere andchambers -
Valves 4 open and close the openings provided at each boundary betweenchambers substrates 9. Asvalves 4, a gate-valve is suitable. The gate-valve is the valve used at a linear vacuum path and can make the path clear with no obstacle remaining when the valve is opened. -
Deposition chamber 1, loadlock chamber 2 and unloadrock chamber 20 are vacuum chambers, which comprise apumping system heat chamber 3 is an airtight chamber, it has no pumping system. - The composition of transfer mechanism5 is described using FIG. 1 and FIG. 2. FIG. 2 shows a side schematic view of transfer mechanism 5. Transfer mechanisms 5 is a kind of rack-and-pinion mechanism. Transfer mechanism 5 is mainly composed of a
rack board 51 provided horizontally withrack 50 underneath it andpinion mechanism 52 thattransfer rack board 51 to a horizontal direction, i.e., vertical to the paper of FIG. 2. Eachpinion mechanism 52 is composed of a number ofpinions 521 engaged withrack 50 andmotors 522 that rotate eachpinion 521 to moverack board 51 horizontally. Linear guides 54 guiding the movement ofrack board 51 are provided. - As shown in FIG. 1 and FIG. 2, supports53 are provided uprightly on
rack board 51. Eachsupport 53 has hooks (not shown) holdingsubstrates 9. A number ofpinions 521 are placed at certain intervals along the transfer direction. As shown in FIG. 1,pinion mechanisms 52 are provided at one side of the atmosphere, inside ofheat chamber 3, inside ofload lock chamber 2, inside ofdeposition chamber 1, inside of unloadrock chamber 20 and the other side of the atmosphere. Eachpinion mechanism 52 is operated in order so thatrack board 51 can be transferred from one side of the atmosphere to the other side throughheat chamber 3, loadlock chamber 2,deposition chamber 1 and unloadrock chamber 20. - As understood from FIG. 1 and FIG. 2,
rack board 51 has a rectangular shape, which length direction is in the transfer direction.Substrates 9 also have a rectangular shape.Substrates 9 are held bysupports 53, making its surface vertical and its length direction along the transfer direction. As shown in FIG. 2, sixsubstrates 9 are arranged and held with onerack board 51 in this embodiment. Whenrack board 51 is moved, sixsubstrates 9 held bysupports 53 are transferred at the same time. - A part of transfer mechanism5 may be provided outside
chambers chambers mechanism holding substrates 9 inchambers chambers - Next, the composition of
deposition chamber 1 is described using FIG. 1 and FIG. 3. FIG. 3 shows a side schematic view ofdeposition chamber 1. This embodiment has a composition where an amorphous silicon film is deposited indeposition chamber 1 by the HF plasma CVD method. Here, frequencies between LF (Low Frequency) and UHF (Ultra-High Frequency) are defined as HF (High Efficiency). Specifically,deposition chamber 1 comprisesHF electrodes 12 provided indeposition chamber 1, HF power supplies 13 which apply HF power toHF electrodes 12 and agas introduction system 14 which introduces the gas mixture of silane and hydrogen intodeposition chamber 1. -
HF electrodes 12 are elongated downward from the upper wall ofdeposition chamber 1.HF electrodes 12 are antenna-like. EachHF electrode 12 is a U-shaped metal rod. Both ends of eachHF electrode 12 are fixed airtightly withinsulation block 15 provided at the upper wall ofdeposition chamber 1. Both ends ofHF electrodes 12 are connected to HF power supplies 13. - When HF power supplies13 apply the HF power to
HF electrodes 12 in state of the gas mixture of silane and hydrogen introduced bygas introduction system 14, HF discharges are generated in the gas mixture to form plasmas. Silane decomposes in the plasmas, resulting in that the hydrogenated amorphous silicon film is deposited on the surface of thesubstrate 9 placed on both sides ofHF electrodes 12. - Points greatly characterizing this embodiment are in the composition of
heat chamber 3. These points are described as follows using FIG. 4. FIG. 4 shows a side schematic view ofheat chamber 3. - One point greatly characterizing this embodiment is that the means of heating is provided not in
load lock chamber 2 but in separately providedheat chamber 3. The means of heating in this embodiment is aheating mechanism 31 provided inheat chamber 3. Another point greatly characterizing this embodiment is thatsubstrates 9 are heated at a pressure higher than the atmospheric pressure utilizing forced convection. - Specifically,
heat chamber 3 comprisesvalves 4 at each boundary to the atmosphere and to loadlock chamber 2. Pressurizinggas supply system 32 that supplies compressed air or dry air intoheat chamber 3 to pressurize it is provided.Heating mechanism 31 inheat chamber 3 is composed mainly ofheat source 311,baffle plates air blower 316 blowing air through the air flow path for circulating insideheat chamber 3. -
Heat source 311 has high energy efficiency such as combustion equipment used with a boiler. Heatsource 311 produces heat of 4000 joule/second, i.e., 6000 Kcal/hour, using City gas as fuel. Instead of City gas, liquefied petroleum gas (LPG) may be used as fuel. A centrifugal turbo fan is used asair blower 316. Baffle plate 312 (hereinafter called the first baffle plate 312) separates the region at whichsubstrates 9 are placed and the region at whichheat source 311 is provided. Heatsource 311 is put betweenbaffle plate 312 and baffle plate 313 (hereinafter called the second baffle plate 313). Baffle plate 314 (hereinafter called the third baffle plate 314) shuts the space between the upper end of thefirst baffle plate 312 and the upper end of thesecond baffle plate 313. Baffle plate 315 (hereinafter called the fourth baffle plate 315) shuts the space between the bottom end of thesecond baffle plate 313 and the wall ofheat chamber 3. -
Second baffle plate 313 is provided with acirculation hole 317.Air blower 316 is fixed on the sidewall ofheat chamber 3 at the same height ascirculation hole 317. Whenair blower 316 is operated, air heated byheat source 311 is inhaled into the upper space throughcirculation hole 317. -
Filter 33 is provided above the region wheresubstrates 9 are placed.Filter 33 is flush with thethird baffle plate 314 at its bottom end.Filter 33 traverses the air flow path. Heated air blowing fromair blower 316 flows between thethird baffle plate 314 and the upper wall ofheat chamber 3, and reaches to the space abovefilter 33. The heated air flows tosubstrates 9 throughfilter 33 knocking on the wall ofheat chamber 3, resulting in thatsubstrates 9 are heated. -
Filter 33 is used to preventsubstrates 9 from contamination. A HEPA filter (High-Efficiency Particle Air filter) with heat-resistance up to about 250° C. is preferably used asfilter 33. A heat insulator is provided at the wall ofheat chamber 3 if necessary. - As designated by arrows in FIG. 4, the heated air heats
substrates 9, when it flows down from the upper space to the bottom space. Then, the air reaches between thefirst baffle plate 312 and thesecond baffle plate 313, knocking on the bottom wall ofheat chamber 3. Consequently, the air is heated again byheat source 311 and blows out fromair blower 316.Rack board 51 andpinion mechanism 52 are designed to pass the heated air sufficiently. -
Substrates 9 are heated higher than the deposition temperature byheating mechanism 31 as described. Showing an example, in case the amorphous silicon film is deposited, the deposition temperature is about 200° C. In this case,substrates 9 must be heated inheating chamber 3 up to about 230°C. Heating mechanism 31 is designed so that the temperature of the heated air can become about 250° C. and the flow rate of the heated air can be maintained at about 100 m3 per minute. With this composition,substrates 9 are heated up to about 230° C. within ten to fifteen minutes. - On the other hand, in this embodiment, a temperature-
decrease prevention mechanism 22 is provided inload lock chamber 2. Temperature-decrease prevention mechanism 22 prevents the substrate temperature from decreasing lower than the deposition temperature. This point is described using FIG. 1 and FIG. 5. FIG. 5 shows a side schematic view ofload lock chamber 2. - Radiation lamp-
heaters 221 are employed as temperature-decrease prevention mechanism 22 in this embodiment. Radiation lamp-heaters 221 are rod-shaped filament lamps such as halogen lamps. Radiation lamp-heaters 221 are posed horizontally and aligned vertically. Radiation lamp-heaters 221 are held at both ends together withholders 222 in which a feeding line is provided. Units of radiation lamp-heaters 221 and a couple ofholder 222 are arranged between twosubstrates 9 and between asubstrate 9 and the wall ofload lock chamber 2. - When the infrared absorption coefficient of
substrates 9 is poor such as in thecase substrates 9 have a TCO film as described, it is difficult to heatsubstrates 9 by radiation lamp-heaters 221. However, in this embodiment, the heating inload lock chamber 2 is supplementary becauseheating mechanism 31 inheat chamber 3heats substrate 9 higher than the deposition temperature. In other words, heating is enough if the substrate temperature does not become lower than the deposition temperature whilesubstrates 9 stay inload lock chamber 2. Considering this point, radiation lamp-heaters 221 are employed as temperature-decrease prevention mechanism 22 in this embodiment. - Showing a more-detailed example, about fifteen lamps of about 1 kW are used for each
substrate 9 as temperature-decrease prevention mechanism 22, in case that substrates 9 are heated up to about 230° C. inheat chamber 3, the deposition temperature is 200° C., andsubstrates 9 are placed inload lock chamber 2 for about nine minutes. In this example, the pressure inload lock chamber 2 is about 1 Pa. - Heating quantity of radiation lamp-
heaters 221 is decided according to howhigh temperature substrates 9 are heated to inheat chamber 3. In addition, it should be considered how much the substrate temperature decreases by heat dissipation whilesubstrates 9 are transferred fromheat chamber 3 todeposition chamber 1, and howmuch heat substrates 9 receive from radiation lamp-heaters 221 of temperature-decrease prevention mechanism 22 inload lock chamber 2. It is preferable that the substrate temperature is just the same as the deposition temperature whensubstrates 9reach deposition chamber 1. - Next, whole operation of the apparatus of this embodiment is described.
- To begin with,
substrates 9 are set to rackboard 51 at a platform (not shown). Eachsupport 53 holdssubstrates 9. After thevalve 4 on the atmosphere side ofheat chamber 3 is opened, transfer mechanism 5 is operated to transfersubstrates 9 intoheat chamber 3. The pressure inheat chamber 3 is always maintained a little higher than the atmospheric pressure by pressurizinggas supply system 32. - After closing the
valve 4,air blower 316 is operated to cause the forced convection, therebyheating substrates 9. Heatsource 311 is operated all the time while the apparatus is available.Air blower 316 may be operated all the time as well. - After
heating substrates 9 up to a specified temperature, a valve on pressurizinggas supply system 32 is closed.Substrates 9 are transferred to loadlock chamber 2 aftervalve 4 betweenheat chamber 3 and loadlock chamber 2 is opened. After closing thevalve 4, loadlock chamber 2 is pumped by pumpingsystem 21 to a specified vacuum pressure.Substrates 9 are transferred todeposition chamber 1 aftervalve 4 betweenload lock chamber 2 anddeposition chamber 1 is opened. - Next, after the
valve 4 is closed the deposition ontosubstrates 9 is carried out indeposition chamber 1 as described.Substrates 9 are transferred out to the atmosphere via unloadlock chamber 20 after the deposition.Substrates 9 are taken out from eachsupport 53 onrack board 51 at another platform (not shown) - The apparatus of this embodiment described above brings a merit that the energy efficiency is higher and the running cost is cheaper because
heating mechanism 31 provided inheat chamber 3heats substrates 9 not by the radiation but by the forced convection. Particularly, the apparatus of this embodiment is suitable for the manufacture of solar cells for power supply because it requires the energy-payback-time reduction. -
Substrates 9 are heated sufficiently even if those infrared ray absorption coefficients are poor as in case of the substrate with the TCO film, becausesubstrates 9 are heated not by the radiation but by the forced convection. This point is another reason why this embodiment is suitable for the manufacture of solar cells. - Problems of the overshoot and the thermal deformation of
substrates 9 do not arise in this embodiment, becausesubstrates 9 are not heated rapidly as in case of the radiation heating. In addition, it is possible to measure the substrate temperature with high accuracy by a radiation thermometer. Therefore, the temperature control ofsubstrates 9 can be carried out with high accuracy. - The composition where
substrates 9 are heated to a temperature higher than the deposition temperature also contributes to enhancing energy efficiency. It is possible to heatsubstrates 9 at a temperature lower than the deposition temperature inheat chamber 3 andthereinafter heat substrates 9 up to the deposition temperature inload lock chamber 2 ordeposition chamber 1. However, it is difficult to heatsubstrates 9 efficiently inload lock chamber 2 ordeposition chamber 1 because those are vacuum chambers where the convection heating cannot be utilized. Therefore, heating inload lock chamber 2 ordeposition chamber 1 must be the radiation heating. As described, the radiation heating has the low energy efficiency. The radiation heating of the substrate with the TCO film is essentially impossible. Contrarily, whensubstrates 9 are heated higher than the deposition temperature inheat chamber 3 as in this embodiment, the radiation heating of the low efficiency is not required. Therefore, even the substrate with the TCO film can be heated sufficiently. - The merit of film quality improvement is brought from the composition that substrates9 are transferred to
deposition chamber 1 viaload lock chamber 2 aftersubstrates 9 are heated to a temperature higher than the deposition temperature inheat chamber 3. Toheat substrates 9 inheat chamber 3 brings the significance that adsorbed gas can be released sufficiently fromsubstrates 9. Gas such as water is adsorbed to the surface ofsubstrates 9. If the deposition is carried out in state that adsorbed gas such as water has not been well released, adsorbed gas would be released rapidly to contaminate the deposited film or to cause a structural defect such as forming bubbles within it. Whensubstrates 9 are heated prior to the deposition, these problems are prevented since adsorbed gas is well released in advance. - Now, how much quantity of adsorbed gas is released depends on how
high temperature substrates 9 are heated and how long the temperature is kept. In this embodiment,substrates 9 are heated higher than the deposition temperature inheating chamber 3 and transferred todeposition chamber 1 viaload lock chamber 2, keeping almost the same temperature. Therefore, adsorbed gas is well released fromsubstrates 9 by the time whensubstrates 9 arrive atdeposition chamber 1. Contrarily, if the adsorbed gas release is carried out only by the heating inload lock chamber 2, gas release is insufficient because high-temperature keeping time gets shorter. In this case,substrates 9 need to stay longer inload lock chamber 2 so that adsorbed gas can be well released, resulting in that the productivity decreases and the running cost increases. Therefore, this composition is not preferable. - Another merit that substrates9 are not required to be heated at so high temperature in
heat chamber 3 is brought from the composition that temperature-decrease prevention mechanism 22 is provided inload lock chamber 2. If temperature-decrease prevention mechanism 22 is not provided, there arises necessity to heatsubstrates 9 at so high temperature calculating the temperature decrease inload lock chamber 2. In this composition, it would take longer time to heatsubstrates 9 inheat chamber 3. Otherwise,heating mechanism 31 would be required to be larger size. The cost of providing temperature-decrease prevention mechanism 22 and the running cost in this embodiment possibly would be cheaper rather than that. - Moreover, another merit that substrates9 can be restrained from contamination while those are transferred from
heat chamber 3 todeposition chamber 1 is brought form the composition that heatchamber 3 is a part of the apparatus, i.e.,heat chamber 3 anddeposition chamber 1 are connected airtightly. Ifsubstrates 9 are temporarily taken out from the apparatus while those are transferred fromheat chamber 3 todeposition chamber 1,substrates 9 may suffer from contamination such as adhesion of contaminants. The possibility of contamination is low whenheat chamber 3 is connected withdeposition chamber 1 directly or indirectly as shown in this embodiment. - It is possible to employ a chamber layout of the cluster-tool types where
load lock chamber 2,heat chamber 3 anddeposition chamber 1 are provided around a transfer chamber in which a transfer robot is provided. - It is also possible to employ the composition where
substrates 9 are heated just at the deposition temperature, though those are heated higher than the deposition temperature in this embodiment. The pressure inheat chamber 3 may be the same as the atmospheric pressure. Still, the pressure higher than the atmospheric pressure brings the advantage that contaminants would not be introduced intoheat chamber 3. Inert gas such as nitrogen may be supplied intoheat chamber 3 instead of compressed air or dry air at a pressure higher than the atmospheric pressure. - A ceramic heater may be used as temperature-
decrease prevention mechanism 22 instead of radiation lamp-heaters 221. The heating inload lock chamber 2 can be abolished byheating substrates 9 inheat chamber 3 at a temperature higher enough than the deposition temperature. A specified heat-insulation mechanism may be used as temperature-decrease prevention mechanism 22 inload loch chamber 2. - Other than the hydrogenated amorphous silicon film deposition as described, the apparatus of the invention can carry out another amorphous silicon film deposition such as amorphous silicon fluoride film deposition, amorphous silicon carbide film deposition, amorphous silicon germanium firm deposition and the like. Phosphorus doped films or boron doped films also can be deposited by the apparatus of the invention.
- The apparatus of the invention can be used for manufacture of liquid crystal displays or information storage disks other than solar cells. For example, the composition of the heating in this invention can be used for a thin-film deposition for a driver electrode in a LCD. Especially, sufficient gas release is required when an indium-tin-Oxide (ITO) film is deposited by sputtering on a substrate with a color filter formed on it, because the color filter involves much water. Therefore, the apparatus of the invention that can carry out the gas release efficiently is suitable.
- The composition of
deposition chamber 1 is optimized according to a kind of deposition process. For example, a CVD not by an inductive coupled plasma but by a capacitive coupled plasma may be adopted. Physical depositions such as sputtering or ion-beam deposition can be adopted as well.
Claims (7)
1. A thin-film deposition apparatus, comprising;
a deposition chamber which is a vacuum chamber where thin-film deposition is carried out on a substrate at a deposition temperature higher than room temperature; and
a heat chamber connected directly or indirectly with said deposition chamber; wherein
said heat chamber is one which heats said substrate under atmospheric pressure or a pressure higher than said atmospheric pressure, and has a mechanism to heat said substrate supplying gas of a temperature higher than said room temperature by forced convection.
2. A thin-film deposition apparatus as claimed in , wherein;
claim 1
said heating mechanism is one which heats said substrate at said deposition temperature or a temperature higher than said deposition temperature.
3. A thin-film deposition apparatus as claimed in or , wherein;
claim 1
claim 2
said substrate is used for manufacture of a solar cell.
4. A thin-film deposition apparatus comprising;
a deposition chamber which is a vacuum chamber where thin-film deposition is carried out on a substrate at a deposition temperature higher than room temperature;
a load lock chamber which is a vacuum chamber where said substrate stays temporarily while said substrate is transferred from an atmosphere to said deposition chamber; and
a heat chamber which heats said substrate under atmospheric pressure or a pressure higher than said atmospheric pressure; wherein
said heat chamber, said load lock chamber and said deposition chamber are connected directly or indirectly in this order interposing a valve; and
said heat chamber has a mechanism to heat said substrate supplying gas of a temperature higher than said room temperature by forced convection.
5. A thin-film deposition apparatus as claimed in , wherein;
claim 4
said heating mechanism is one which heats said substrate at said deposition temperature or a temperature higher than said deposition temperature.
6. A thin-film deposition apparatus as claimed in , wherein;
claim 5
a temperature-decrease prevention mechanism which prevents temperature of said substrate from decreasing lower than said deposition temperature is provided in said load lock chamber.
7. A thin-film deposition apparatus as claimed in , or , wherein;
claim 4
claim 5
claim 6
said substrate is used for manufacture of a solar cell.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/428,849 US6933009B2 (en) | 1999-12-28 | 2003-05-05 | Thin-film deposition method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-374422 | 1999-12-28 | ||
JP37442299A JP4089113B2 (en) | 1999-12-28 | 1999-12-28 | Thin film production equipment |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/428,849 Continuation US6933009B2 (en) | 1999-12-28 | 2003-05-05 | Thin-film deposition method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20010007246A1 true US20010007246A1 (en) | 2001-07-12 |
Family
ID=18503825
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/749,681 Abandoned US20010007246A1 (en) | 1999-12-28 | 2000-12-28 | Thin-film deposition apparatus |
US10/428,849 Expired - Fee Related US6933009B2 (en) | 1999-12-28 | 2003-05-05 | Thin-film deposition method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/428,849 Expired - Fee Related US6933009B2 (en) | 1999-12-28 | 2003-05-05 | Thin-film deposition method |
Country Status (2)
Country | Link |
---|---|
US (2) | US20010007246A1 (en) |
JP (1) | JP4089113B2 (en) |
Cited By (227)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040121086A1 (en) * | 2002-05-31 | 2004-06-24 | Tomoko Takagi | Thin film depositing method and apparatus |
US20080110495A1 (en) * | 2004-12-28 | 2008-05-15 | Showa Shell Sekiyu K.K. | Method for Forming Light Absorption Layer of Cis Type Thin-Film Solar Cell |
CN100431102C (en) * | 2003-05-02 | 2008-11-05 | 石川岛播磨重工业株式会社 | Vacuum deposition apparatus and method and solar cell material |
WO2009082985A1 (en) * | 2008-01-01 | 2009-07-09 | Dongguan Anwell Digital Machinery Co., Ltd. | A system and process for processing the substrate in the chamber |
EP2299477A1 (en) * | 2008-06-06 | 2011-03-23 | Ulvac, Inc. | Thin film solar cell manufacturing equipment |
US20110097518A1 (en) * | 2009-10-28 | 2011-04-28 | Applied Materials, Inc. | Vertically integrated processing chamber |
US20120237885A1 (en) * | 2011-01-14 | 2012-09-20 | Stion Corporation | Apparatus and Method Utilizing Forced Convection for Uniform Thermal Treatment of Thin Film Devices |
US20120279943A1 (en) * | 2011-05-03 | 2012-11-08 | Applied Materials, Inc. | Processing chamber with cooled gas delivery line |
CN102881550A (en) * | 2011-07-13 | 2013-01-16 | 三星显示有限公司 | Vapor deposition apparatus, vapor deposition method, and method of manufacturing organic light-emitting display apparatus |
CN102881548A (en) * | 2011-07-13 | 2013-01-16 | 三星显示有限公司 | Vapor deposition apparatus and method, and method of manufacturing organic light emitting display apparatus |
CN102877039A (en) * | 2011-07-13 | 2013-01-16 | 三星显示有限公司 | Vapor deposition apparatus and method, and method of manufacturing organic light emitting display apparatus |
CN104164704A (en) * | 2009-02-25 | 2014-11-26 | 晶阳股份有限公司 | High throughput multi-wafer epitaxial reactor |
US20150329968A1 (en) * | 2012-12-26 | 2015-11-19 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | In-line plasma cvd apparatus |
US20150361555A1 (en) * | 2014-06-12 | 2015-12-17 | Crystal Solar Inc. | Cvd epitaxial reactor chamber with resistive heating, three channel substrate carrier and gas preheat structure |
US9920451B2 (en) | 2009-02-25 | 2018-03-20 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US9982363B2 (en) | 2011-05-27 | 2018-05-29 | Crystal Solar, Incorporated | Silicon wafers by epitaxial deposition |
US20190304821A1 (en) * | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
CN110396677A (en) * | 2019-06-26 | 2019-11-01 | 南京爱通智能科技有限公司 | A kind of quick heating means of ultra-large atomic layer deposition apparatus |
US11004977B2 (en) | 2017-07-19 | 2021-05-11 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11101370B2 (en) | 2016-05-02 | 2021-08-24 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11107676B2 (en) | 2016-07-28 | 2021-08-31 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11164955B2 (en) | 2017-07-18 | 2021-11-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
DE102020112641A1 (en) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Holding device and use of the holding device |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US20220356561A1 (en) * | 2019-09-25 | 2022-11-10 | Beneq Oy | Method and apparatus for processing surface of a semiconductor substrate |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
US11970766B2 (en) | 2023-01-17 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10101014A1 (en) * | 2001-01-05 | 2002-07-11 | Zeiss Carl | Coating of optical elements, especially for use with ultraviolet light |
JP4645448B2 (en) * | 2003-05-02 | 2011-03-09 | 株式会社Ihi | Vacuum film forming apparatus, vacuum film forming method, and solar cell material |
US20100194116A1 (en) * | 2009-02-03 | 2010-08-05 | Imad Mahawili | Turbine energy generating system |
JP5319464B2 (en) * | 2009-09-04 | 2013-10-16 | 株式会社カネカ | Thin film manufacturing apparatus and thin film manufacturing method |
US8525019B2 (en) | 2010-07-01 | 2013-09-03 | Primestar Solar, Inc. | Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules |
KR20120040433A (en) | 2010-10-19 | 2012-04-27 | 삼성전자주식회사 | Device jetting an gas and solar cell manufacturing method using the same |
KR101696354B1 (en) * | 2011-11-22 | 2017-01-23 | 피코순 오와이 | An atomic layer deposition reactor for processing a batch of substrates and method thereof |
JP5900614B2 (en) * | 2012-05-22 | 2016-04-06 | 株式会社島津製作所 | Semiconductor manufacturing equipment |
JP5817646B2 (en) * | 2012-05-29 | 2015-11-18 | 株式会社島津製作所 | Sample holder |
JP6011191B2 (en) * | 2012-09-20 | 2016-10-19 | 株式会社島津製作所 | Semiconductor manufacturing equipment |
JP5998925B2 (en) * | 2012-12-28 | 2016-09-28 | 株式会社島津製作所 | Heating device |
JP7160421B1 (en) | 2022-02-10 | 2022-10-25 | 株式会社シー・ヴィ・リサーチ | Film forming apparatus, film forming method and gas nozzle |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109157A (en) * | 1975-12-18 | 1978-08-22 | Kawasaki Jukogyo Kabushiki Kaisha | Apparatus for ion-nitriding |
FR2503627A1 (en) * | 1981-04-09 | 1982-10-15 | Raffinage Cie Francaise | HEAD FOR EXTRUSION OF A TUBULAR PARAISON TO AT LEAST ONE LAYER OF MATERIAL |
DE4111228A1 (en) * | 1991-04-08 | 1992-10-15 | Wilhelm Hegler | DEVICE FOR PRODUCING PLASTIC TUBES |
IT1247920B (en) * | 1991-05-13 | 1995-01-05 | Pirelli Cavi S P A Dir Proprie | EXTRUSION HEAD TO APPLY POLYMERIC MATERIAL COATINGS ON SEMI-FINISHED CYLINDRICAL CONFORMATION WORKS |
JP3211356B2 (en) * | 1992-04-22 | 2001-09-25 | 株式会社島津製作所 | In-line type plasma CVD equipment |
FR2736134B1 (en) * | 1995-06-29 | 1997-08-22 | Kertscher Sa E | SEALING DEVICE, IN PARTICULAR FOR A PLASTIC MATERIAL PROCESSING MACHINE |
JP3373413B2 (en) * | 1997-10-20 | 2003-02-04 | エスペック株式会社 | Heat treatment equipment for uniformly heating flat workpieces by changing the wind speed |
-
1999
- 1999-12-28 JP JP37442299A patent/JP4089113B2/en not_active Expired - Lifetime
-
2000
- 2000-12-28 US US09/749,681 patent/US20010007246A1/en not_active Abandoned
-
2003
- 2003-05-05 US US10/428,849 patent/US6933009B2/en not_active Expired - Fee Related
Cited By (270)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040121086A1 (en) * | 2002-05-31 | 2004-06-24 | Tomoko Takagi | Thin film depositing method and apparatus |
CN100431102C (en) * | 2003-05-02 | 2008-11-05 | 石川岛播磨重工业株式会社 | Vacuum deposition apparatus and method and solar cell material |
US20080110495A1 (en) * | 2004-12-28 | 2008-05-15 | Showa Shell Sekiyu K.K. | Method for Forming Light Absorption Layer of Cis Type Thin-Film Solar Cell |
WO2009082985A1 (en) * | 2008-01-01 | 2009-07-09 | Dongguan Anwell Digital Machinery Co., Ltd. | A system and process for processing the substrate in the chamber |
AU2009203106B2 (en) * | 2008-01-01 | 2012-01-12 | Dongguan Anwell Digital Machinery Co., Ltd. | A system and process for processing the substrate in the chamber |
EP2299477A4 (en) * | 2008-06-06 | 2012-05-02 | Ulvac Inc | Thin film solar cell manufacturing equipment |
EP2299477A1 (en) * | 2008-06-06 | 2011-03-23 | Ulvac, Inc. | Thin film solar cell manufacturing equipment |
US20110189384A1 (en) * | 2008-06-06 | 2011-08-04 | Ulvac, Inc. | Thin-film solar cell manufacturing apparatus |
JP2015015479A (en) * | 2009-02-25 | 2015-01-22 | クリスタル・ソーラー・インコーポレーテッド | Reactor for simultaneously processing multiple wafers |
CN104164704A (en) * | 2009-02-25 | 2014-11-26 | 晶阳股份有限公司 | High throughput multi-wafer epitaxial reactor |
US9920451B2 (en) | 2009-02-25 | 2018-03-20 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US9556522B2 (en) | 2009-02-25 | 2017-01-31 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US20110097518A1 (en) * | 2009-10-28 | 2011-04-28 | Applied Materials, Inc. | Vertically integrated processing chamber |
CN102598240A (en) * | 2009-10-28 | 2012-07-18 | 应用材料公司 | Vertically integrated processing chamber |
TWI559425B (en) * | 2009-10-28 | 2016-11-21 | 應用材料股份有限公司 | Vertically integrated processing chamber |
US8998606B2 (en) * | 2011-01-14 | 2015-04-07 | Stion Corporation | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
US20120237885A1 (en) * | 2011-01-14 | 2012-09-20 | Stion Corporation | Apparatus and Method Utilizing Forced Convection for Uniform Thermal Treatment of Thin Film Devices |
US20120279943A1 (en) * | 2011-05-03 | 2012-11-08 | Applied Materials, Inc. | Processing chamber with cooled gas delivery line |
US9982363B2 (en) | 2011-05-27 | 2018-05-29 | Crystal Solar, Incorporated | Silicon wafers by epitaxial deposition |
US8883267B2 (en) | 2011-07-13 | 2014-11-11 | Samsung Display Co., Ltd. | Vapor deposition apparatus, vapor deposition method, and method of manufacturing organic light-emitting display apparatus |
CN102881550A (en) * | 2011-07-13 | 2013-01-16 | 三星显示有限公司 | Vapor deposition apparatus, vapor deposition method, and method of manufacturing organic light-emitting display apparatus |
EP2546386A1 (en) * | 2011-07-13 | 2013-01-16 | Samsung Display Co., Ltd. | Vapor deposition apparatus, vapor deposition method, and method of manufacturing organic light-emitting display apparatus |
CN102877039A (en) * | 2011-07-13 | 2013-01-16 | 三星显示有限公司 | Vapor deposition apparatus and method, and method of manufacturing organic light emitting display apparatus |
CN102881548A (en) * | 2011-07-13 | 2013-01-16 | 三星显示有限公司 | Vapor deposition apparatus and method, and method of manufacturing organic light emitting display apparatus |
TWI577826B (en) * | 2011-07-13 | 2017-04-11 | 三星顯示器有限公司 | Vapor deposition apparatus and method, and method of manufacturing organic light emitting display apparatus |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US20150329968A1 (en) * | 2012-12-26 | 2015-11-19 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | In-line plasma cvd apparatus |
US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US20150361555A1 (en) * | 2014-06-12 | 2015-12-17 | Crystal Solar Inc. | Cvd epitaxial reactor chamber with resistive heating, three channel substrate carrier and gas preheat structure |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US11101370B2 (en) | 2016-05-02 | 2021-08-24 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11107676B2 (en) | 2016-07-28 | 2021-08-31 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11851755B2 (en) | 2016-12-15 | 2023-12-26 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11164955B2 (en) | 2017-07-18 | 2021-11-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11004977B2 (en) | 2017-07-19 | 2021-05-11 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
TWI774942B (en) * | 2018-03-29 | 2022-08-21 | 荷蘭商Asm 智慧財產控股公司 | Substrate rack and a substrate processing system and method |
US20190304821A1 (en) * | 2018-03-29 | 2019-10-03 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
CN110323118A (en) * | 2018-03-29 | 2019-10-11 | Asm Ip控股有限公司 | Substrate rack and base plate processing system and method |
US11088002B2 (en) * | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11453946B2 (en) | 2019-06-06 | 2022-09-27 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
CN110396677A (en) * | 2019-06-26 | 2019-11-01 | 南京爱通智能科技有限公司 | A kind of quick heating means of ultra-large atomic layer deposition apparatus |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20220356561A1 (en) * | 2019-09-25 | 2022-11-10 | Beneq Oy | Method and apparatus for processing surface of a semiconductor substrate |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11837494B2 (en) | 2020-03-11 | 2023-12-05 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
DE102020112641A1 (en) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Holding device and use of the holding device |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US11972944B2 (en) | 2022-10-21 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11970766B2 (en) | 2023-01-17 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
Also Published As
Publication number | Publication date |
---|---|
US20030203124A1 (en) | 2003-10-30 |
US6933009B2 (en) | 2005-08-23 |
JP4089113B2 (en) | 2008-05-28 |
JP2001187332A (en) | 2001-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6933009B2 (en) | Thin-film deposition method | |
TW529066B (en) | Chamber for uniform substrate heating | |
JP2766774B2 (en) | Method for cooling and heating large area glass substrate and apparatus therefor | |
KR101312676B1 (en) | Active cooling substrate support | |
US6780251B2 (en) | Substrate processing apparatus and method for fabricating semiconductor device | |
TW563222B (en) | Apparatus and method for thermally isolating a heat chamber | |
KR101264786B1 (en) | Vertical heat processing apparatus, component for same, and heat-insulating cylinder for same, for forming high dielectric constant film | |
JP2010272875A (en) | Method of coating and annealing large area glass substrate | |
CN1733966A (en) | Apparatus for heating substrate and method for controlling temperature of susceptor for heated substrate | |
US20070254112A1 (en) | Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning | |
CN1748285B (en) | Chamber for uniform substrate heating | |
TWI492305B (en) | Method and apparatus for manufacturing semiconductor device | |
JPH1022226A (en) | Method and device for producing epitaxial wafer | |
US6623563B2 (en) | Susceptor with bi-metal effect | |
US20070042118A1 (en) | Encapsulated thermal processing | |
KR101593493B1 (en) | Themal processing apparatus of large area glass substrate | |
JP4890313B2 (en) | Plasma CVD equipment | |
US20230245868A1 (en) | Holding device, and use of the holding device | |
WO2011104740A1 (en) | Cvd processing method and cvd device using said method | |
KR200365533Y1 (en) | Furnace of low temperature chemical vaper deposition equipment | |
JP6484035B2 (en) | Thin film forming apparatus, thin film manufacturing method using the same, and organic EL device manufacturing method | |
TWI433253B (en) | Semiconductor apparatus and the movable susceptor therein | |
CN115410949A (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium | |
KR20240043805A (en) | Substrate processing device, semiconductor device manufacturing method, substrate processing method and program | |
JPH05144748A (en) | Plasma treatment apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ANELVA CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:UEDA, MASASHI;TAKAGI, TOMOKO;REEL/FRAME:012392/0163 Effective date: 20011214 |
|
AS | Assignment |
Owner name: ISHIKAWAJIMA-HARIMA HEAVY INDUSTRIES CO., LTD., JA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ANELVA CORPORATION;REEL/FRAME:013553/0166 Effective date: 20021008 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |