CN1748285B - Chamber for uniform substrate heating - Google Patents
Chamber for uniform substrate heating Download PDFInfo
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- CN1748285B CN1748285B CN200380109616.2A CN200380109616A CN1748285B CN 1748285 B CN1748285 B CN 1748285B CN 200380109616 A CN200380109616 A CN 200380109616A CN 1748285 B CN1748285 B CN 1748285B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Abstract
In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; and (3) a heater disposed within the chamber between a sidewall of the chamber and the plurality of substrate supports and having an edge region and a center region. The heater is adapted to produce more heat within the edge region than within the center region of the heater. Numerous other aspects are provided.
Description
The application's related application
The present patent application is the application that continues of No. the 10/025th, 152, the U.S. Patent application series of December 18 calendar year 2001 application, and requires the benefit of priority of No. the 60/259th, 035, the U.S. Provisional Patent Application of submission on December 29th, 2000.The present invention also requires the benefit of priority of No. the 60/434th, 064, the U.S. Provisional Patent Application submitted on December 17th, 2002 in addition.All above-mentioned applications all integral body are combined in here as a reference.
Technical field
The solution of the present invention is usually directed to be used for the equipment and the method for heat treatment substrate.
Background of invention
In the manufacturing of flat-panel monitor (FPD), thin-film transistor (TFT), liquid crystal cells metal interconnecting and further feature structure are to form by deposition and from conductor, semiconductor and dielectric material that glass substrate is removed multilayer.Formed various feature structure is integrated into a system, is used to form for example Active Matrix LCD At phosphor screen jointly, wherein produces show state in the electronics mode in the pixel of each on FPD.The treatment technology that is used to produce FPD comprises plasma fortified chemical vapor deposition (PECVD), physical vapor deposition (PVD), etching etc.Plasma treatment is particularly suitable for making flat-panel monitor, because the needed treatment temperature of deposited film is relatively low and the film quality that produced by plasma process is good.
During FPD handles, make FPD suitably bring into play function, it is crucial that suitable film heat treatment is carried out on the whole surface of substrate.Needed heating-up temperature then according to handled film type with the technology of being carried out and different.For example, an exemplary film that uses in the structure of FPD is low temperature polycrystalline silicon (LTPS).Partial L TPS film processing requirements LTPS film is heated to about 600 ℃, so that remove dehydrogenation from film, and for amorphous silicon (a-Si) film, similarly heat treatment then only needs about 450 ℃ low temperature.
Generally speaking, the film heat treated because non-uniform temperature will cause and can not fully remove pollutant, causes film to peel off and the part elimination the temperature altitude sensitivity.For the heterogeneity of compensation temperature, heat treatment must time expand.Unfortunately, prolong heat treatment time and will increase manufacturing cost, if processing not exclusively then produce out of use film through regular meeting.
Thereby traditional thermal chamber provides heat treatment by gas conduction and thermal radiation in conjunction with heating one or more substrates.Unfortunately, locular wall and other indoor part provide heat conduction path in chamber, cause heat conduction loss.This heat conduction loss produces the substrate heat treatment environment of constant fluctuation.Along with increase in temperature, it is more remarkable that heat conduction loss becomes, and the hot heterogeneity in the substrate heat treatment environment is worsened.And traditional thermal chamber is very big (to hold substrate) usually, because of the area and the volume that will heat all increases, thereby the problem of heating uniformity further worsened.For example, the increase along with demands such as bigger computer display, monitor, panel fluorescent screen TVs needs to utilize bigger substrate.Typical substrate may become 620mm * 750mm or bigger.
For compensate for larger substrates, bigger chamber volume and the thermal loss that increases continuously, used and more added thermal part, increased equipment cost, energy usage and temperature heterogeneity thus.Along with increase in temperature, use the copper heating element to offset cost of energy usually and effective heating is provided.The efficiency of heating surface of the copper heater generally efficiency of heating surface than other type heating element is more effective.Unfortunately, along with increase in temperature, thereby copper atom is often overflowed and is entered the heating chamber polluted membrane from the copper heater.Therefore, traditional heating chamber and heating process all can't be under the conditions of effective and saving cost, and providing can received even and free of contamination again substrate heating.
Therefore, need provide a kind of method and apparatus, be used for a plurality of substrates of heat treatment equably.
Summary of the invention
In a first aspect of the present invention, be provided with first device that is used for heated substrate.This first device comprises: (1) has the process chamber at bottom and top; (2) a plurality of above-mentioned indoor setting through warmed-up supporting member, in order to support at least two substrates on it; (3) at the above-mentioned indoor sidewall of above-mentioned chamber and the heater between a plurality of substrate support of being arranged on, have marginal zone and central area.Above-mentioned heater is designed to compare in the central area of heater, can produce more heat in the marginal zone.
In a second aspect of the present invention, be provided with second device that is used for heated substrate.This second device comprises: (1) has the process chamber of going up district and inferior segment; (2) have a plurality of substrate boxes through warmed-up supporting member, in order to a plurality of collecting substrates above-mentioned indoor; (3) a plurality of heaters are in order to applying near the bight sidewall of the upper and lower region of above-mentioned chamber than near the more heat central side walls of the upper and lower region of above-mentioned chamber.
In a third aspect of the present invention, be provided with the 3rd device in order to heated substrate.The 3rd device comprises having the process chamber of going up the continuous inferior segment in district and He Shang district.Upper and lower region defines the chamber that a plurality of substrates in clamping betwixt.The 3rd device comprises that also (1) has a plurality of be arranged in the above-mentioned chamber and through the substrate box of warmed-up supporting member, in order to supporting and heat above-mentioned a plurality of substrate; (2) one or more is arranged on the heater in the above-mentioned chamber, with to more manying the mode of heat than applying near the above-mentioned indoor bight sidewall near above-mentioned indoor central side walls, provides heat in above-mentioned substrate box; (3) be arranged on the interior heat reflector of above-mentioned chamber, this heat reflector points to the interior reflecting surface of above-mentioned chamber around the supporting member of at least a portion heating thereby form.Certainly, can also provide a plurality of other technical schemes, comprise system and method according to these and other aspects of the present invention.
Therefore according to as detailed below, subsequently claim and accompanying drawing, other characteristics of the present invention and aspect will become more apparent.
The accompanying drawing summary
Fig. 1 is the top view that is used for the exemplary process system of semiconductor device manufacturing, wherein can advantageously utilize the present invention.
Fig. 2 is the perspective view of an illustrative examples of heating chamber among Fig. 1.
Fig. 3 is the cutaway view that is used for the heating chamber embodiment of substrate heat treated among Fig. 2.
Fig. 4 is the heating chamber among Fig. 1-3 and the cutaway view of conveying chamber.
Fig. 5 is the top cutaway view of an illustrative examples among Fig. 1-4.
Fig. 6 is the phantom of heating chamber among Fig. 1-3.
Fig. 7, Fig. 8 are first illustrative examples that heater among Fig. 6 is shown.
Fig. 9 shows the illustrative examples of heated substrate support and fulcrum post, and wherein the substrate support of substrate and heating is spaced apart, and is supported by fulcrum post, so that form the bottom of heating space.
Figure 10 is the top view of the illustrative examples of heated substrate support among Fig. 9, and wherein heated substrate support comprises a plurality of baffle heaters, and they can be arranged in the material layer of partiting thermal insulations such as fibrous glass, glass, pottery, asbestos or similar material.
Figure 11 is the isollaothermic chart of substrate in about 500 ℃ heat-treatment process, utilizes boundary temperature as standard value, shows the normal temperature changing value in the substrate body.
Figure 12 is the perspective view of another embodiment of heating chamber among Fig. 1-11.
Figure 13 is the perspective view of heating chamber among Figure 12, has removed its district of going up, so that can expose the secondary heater around the substrate box.
Figure 14 is the perspective view of heating chamber among Figure 12, has removed going up of it and has distinguished and secondary heater, so that can expose the substrate box.
Figure 15 is the perspective view of distinguishing on the heating chamber, shows the secondary heater that He Shang district sidewall links to each other.
Figure 16 is the perspective view of heating chamber inferior segment, shows the secondary heater that links to each other with the inferior segment sidewall.
Figure 17 is Fig. 6-8,13, the front view of another embodiment of secondary heater of the present invention in 15 and/or 16.
Figure 18 shows two secondary heater, and they connect together in the upper and lower region of heating chamber.
Figure 19 shows the illustrative examples of secondary heater among Figure 17.
Figure 20 shows two secondary heater, and each has all utilized stratie, and they connect together in the upper and lower region of heating chamber.
Detailed Description Of The Invention
Embodiments of the invention have special advantage in the multicell treatment systems such as Set of tools that are used in usually in the semi-conductor industry, this system is suitable for supporting substrate heating chamber described here.Set of tools is a kind of modular system, comprises a plurality of chambers of carrying out various functions, comprises functions such as substrate heating, center search and location, annealing, deposition and/or etching.A plurality of chambers are installed on the central conveying chamber usually, and this central authorities' conveying chamber accommodates mechanical arm, are suitable for carrying substrate between each chamber.Conveying chamber remains under the vacuum condition usually and an interstage is provided, and is used for being sent to another chamber and/or being sent to the load locking room that is arranged on the Set of tools front end from a chamber with substrate.
Fig. 1 is the planar top view that is used for the exemplary process system 100 of semiconductor device manufacturing, and wherein the present invention can advantageously be used in this system.The present invention can also be used for other treatment system.
This treatment system 100 generally comprises a plurality of chambers and mechanical arm and is equipped with treatment system controller 102, and this controller 102 is programmed, in order to carry out the various processes of being implemented in the treatment system 100.Shown headend equipment 104 for example factory interface is configured to optionally be communicated with a pair of load locking room 106.Especially, headend equipment 104 makes the substrate that is contained in substrate carrier or the gondola 105 be transported to load locking room 106.Can certainly use other interfacial structure.The gondola loading machine 108A-B that is arranged in the headend equipment 104 can linearly, rotatably and/or vertically move, thereby at load locking room 106 be installed between a plurality of gondolas 105 (gondola 105 can be installed on the headend equipment 104 and/or combine with it) on the headend equipment 104 and transport substrate.
Load locking room 106 is provided at first vacuum interface between headend equipment 104 and the conveying chamber 110.Be provided with two load locking rooms 106, to improve output by alternately being communicated with conveying chamber 110 and headend equipment 104.Therefore, when a load locking room 106 was communicated with conveying chamber 110, second load locking room 106 was communicated with headend equipment 104.
Mechanical arm 113 is arranged on conveying chamber 110 centers, so that substrate is sent to a plurality of process chambers 114 or clamping chamber 116 one of them from load locking room 106.Process chamber 114 is suitable for carrying out multiple processing, and as film deposition, annealing, etching etc., clamping chamber 116 then is suitable for carrying out substrate location, cooling etc.Above-mentioned treatment system 100 comprises heating chamber 140, is used for heated substrate during heat treatments such as dehydrogenation and/or tempering.Heating chamber 140 is usually located in the treatment system 100 on the most effective processing position, but also can be positioned on any position of treatment system 100.For example, heat treatment step is carried out after can being connected on deposition process step.Therefore, in order to minimize the motion of mechanical arm 113, heating chamber 140 can be positioned at an adjacent that is used for the process chamber 114 of deposition process step.
Fig. 2 is the perspective view of another illustrative examples of heating chamber 140 among Fig. 1.With reference to figure 2, comprise district's 215 (for example going up bell clamping jaw) and inferior segment 217 (bell clamping jaw for example), wherein go up district 215 and separate with the connector 230 that inferior segment 217 is all had loading window 235.Last district 215 and inferior segment 217 are sealingly secured to symmetric position on the connector 230 and coaxial with connector 230.Can use frictional fit, use encapsulants such as packing ring maybe can bear the putty of high temperature or use pressure adhesive, ceramic bonding agent, glue and anti-processing and can not resemble the binding agents such as bonding agent that copper produces pollutant like this, Jiang Shang district 215 and inferior segment 217 are sealed on the connector 230.Can be by usual way as welding or using bolt, clip or other securing member Jiang Shang district 215 well known in the art and inferior segment 217 to be connected on the connector 230.
The motor 285 that is used for transporting substrate in heating chamber 140 can be fixed to heating chamber 140 (for example, promote or reduce the platform 287 that is supporting substrate, will be described in detail below).For example, motor 285 rotatably is coupled to leading screw 288.Leading screw 288 is rotatably coupled to platform 287, and platform 287 is slidingly matched with installation frame 255.When leading screw 288 was rotated by motor 285, platform 287 is installation frame 255 vertical lifts relatively.
In one embodiment, can use the sealing of thermal insulation layer (not shown) or seal heating chamber 140, so that make the further minimum heat losses that is derived from heating chamber 140.Thermal insulation layer can comprise insulators such as fibrous glass, ceramic fibre, asbestos or prevent other insulating material of thermal loss.In one embodiment, insulating barrier comprises flexible insulation ceramic fibre overcoat, and it has the pyroconductivity that is lower than about 0.035 watt/m ° K and is stable under about 30 ℃ surface temperature.
Fig. 3 is the cutaway view of an embodiment that is used for the heating chamber of substrate heat treated among Fig. 2.Heating chamber 140 among Fig. 3 comprises main body 305, lid 335 and is arranged on the main body 305 and limits the bottom 316 in chamber 307 that chamber 307 is used for heating therein a plurality of substrates 328.In a scheme, main body 305 is by bearing treatment temperature and not constituted by the materials of anti-processing the such as aluminium, steel, nickel of pollution such as copper.Main body 305 can comprise the gas access 360 that extends in the chamber 307, is used for heating chamber 140 is connected to processing gas supply source (not shown), thereby comes transport process gas by it.In another program, vacuum pump 390 can be connected to chamber 307 so that the vacuum in the holding chamber 307 by vacuum end 392.
Framework 325 and carriage 317 are made of materials of anti-processing the such as pottery, aluminium, steel, nickel, and anti-processing and can not produce other material of pollutant as copper.Although framework 325 and carriage 317 can be parts separately, also can imagine carriage 317 and framework 325 are become one, so that be formed for the support component of heated substrate support 340.Although in a scheme, heated substrate support 340 is consistent with substrate 328 shapes but big a little, so that the heat of the overwhelming majority is imposed on substrate 328 and makes efficiency of heating surface maximization, but the supporting member 340 of process heating can be the Any shape that is suitable for heated substrate.For example, in one embodiment, heated holder 340 can be big more a lot of than substrate 328, are exposed to fully under the heat that support 340 provided in order to guarantee substrate 328.Perhaps, heating supporting member 340 can also be in order to the substrate 328 that holds various sizes.
Substrate heating frame 336 is vertically separated in substrate box 310 and is be arranged in parallel, to limit a plurality of substrate heating spaces 322.Each substrate heating space 322 is all in order to heat at least one therein and by the substrate 328 of a plurality of fulcrum posts 342 supportings.On each substrate 328 and beneath substrate heating frame 336 form the coboundary and the lower boundary of substrate heating spaces 322, the top side of substrate 328 and bottom side are exposed among the heat.In one embodiment, coboundary and lower boundary all are equidistant apart from substrate 328, evenly heat with the both sides of guaranteeing substrate 328.For guaranteeing the similarly substrate 328 of heated substrate box 310 inner tops, form the coboundary of top heating space 322 by the heated substrate support 340 of sky.In another embodiment, at interval and substrate position can adjust adapting to different disposal, as annealing, dehydrogenation etc. different add heat request.
The coboundary and the interval between the lower boundary of heating space 322 can be adjusted, with the heat that increases or reduce firing rate and put on each substrate side.For example, the coboundary and the interval between the lower boundary of heating space 322 can narrow down, to increase emittance from heated substrate support 340, elevated temperature and firing rate thus, perhaps this variable spaced is big, to reduce radiation energy incident, reduce substrate temperature thus and the heating of the substrate 328 that slows down.And substrate 328 can more close coboundary or lower boundary setting, so that provide different heats to the either side of substrate 328.In a scheme, in order to enhance productivity, can adjust the interval between the upper and lower border of heating space 322 so that under required speed and temperature heated substrate 328, make substrate box 310 keep substrate heating frame 336 as much as possible simultaneously.In a scheme, the interval between the upper and lower border is about 45mm.The inventor believes that the interval of about 45mm can provide a suitable space to admit substrate 328 between the upper and lower border, carries out effectively space utilization in substrate heating equably and the chamber 307, makes the quantity of substrate heating frame 336 reach maximization.
Fig. 4 is the heating chamber 140 among Fig. 1-3 and the cutaway view of conveying chamber 110.As shown in Figure 4, heating chamber 140 is arranged to window 235 and is alignd with opening 109 in the sidewall that is formed at conveying chamber 110.On this position, conveying chamber opening 109 and window 235 limit substrate and transmit mouth 372, transmit mouth 372 via substrate and can carry substrate 328 by means of mechanical arm 113 (Fig. 1).Substrate transmits mouth 372 and can optionally be sealed by gate valve or finedraw valve sealing device (not shown) such as (slit valve).
For substrate 328 is loaded in the substrate box 310, mechanical arm 113 receives substrate 328 on load plate 118, and this load plate is by arm 111 supportings of mechanical arm 113.For example, substrate can be from a load locking room 106, or a clamping chamber 116, or a process chamber 114 receives.Subsequently, load plate 118 is arranged to transmit mouth 372 by substrate and is carried substrates 328 to heating chamber 140.Substrate box 310 is vertical moving up or down, so that empty heating space 322 is in straight line with substrate transfer plane 332, thereby receives substrate 328.Arm 111 stretches and passes substrate transmission mouth 372, so that substrate 328 is placed in the heating chamber 140, then substrate 328 is placed in the substrate box 310.Arm 111 is sent into substrate 328 in the heating space 322 and with substrate 328 and is placed on the pin 342.In one embodiment, substrate box 310 vertical moving till pin 342 touches substrate 328, make substrate 328 be lifted away from load plate 118.Then, arm 111 and load plate 118 return conveying chamber 110.In another embodiment, arm 111 and load plate 118 move vertically downward, till substrate 328 touches pin 342.Arm 111 and load plate 118 continue to move down then, are supported by pin 342 fully up to substrate 328.The process that substrate 328 is taken away from substrate box 310 is just in time opposite.
Fig. 5 is the top cutaway view of heating chamber 140 illustrative examples among Fig. 1-4.Because a plurality of substrates 328 in chamber 307 clampings of heating chamber 140, the volume in chamber 307 process chamber 114 of a substrate 328 than a clamping usually and clamping chamber 116 is bigger usually.Because chamber 307 volumes increase, the outside atmospheric pressure that applies on the chamber 140 under vacuum may be quite big.For structural strength being provided and cavity volume being minimized, chamber 307 is preferably semicircle, and is consistent or big slightly with the shape of substrate box 310.In another embodiment, the shape in chamber 307 can be circular, square or be suitable for holding the Any shape of substrate 328 and have enough structural intergrities to bear outside atmospheric pressure.
Fig. 6 is the phantom of heating chamber 140 among Fig. 1-3.As shown in Figure 6, heat reflector 320 is arranged in the chamber 307 and is spaced apart with the adjacent inner surface 311 of the main body 305 of heating chamber 140, forms the reflecting surface in the chamber 307.Heat reflector 320 can be reduced to minimum with the conductive heat loss of main body 305 by means of the radiant heat insulation is provided between chamber 307 and inner surface 311.Heat reflector 320 make in the reflection cavity 307 left surface 311 by the heat reflection of radiation and towards the chamber 307 center.Heat reflector 320 comprises simple layer.Perhaps, heat reflector 320 can comprise multilayer, or is combined to form several parts of one.For instance, heat reflector 320 can contain one or more heat conductor, as anti-processing such as aluminium, nickel, steel and there is not the material of the pollutant of copper.When hope had supplementary insulation between chamber 307 and inner surface 311, heat reflector 320 included one or more insulator, as metal deposition pottery, glass and anti-processing and there is not the similar material of the pollutant of copper.In at least one embodiment, heat reflector 320 comprises the internal heat reflecting surface 327 by aluminium, nickel, golden plating, or other are designed reverberation and anti-processing to there is no the surface of the pollutant of copper.
Heat reflector 320 can adopt several method fixedly to lead on the inner surface 311, as adopting pressure adhesive, ceramic bonding agent, glue etc., or by securing member (as anti-processing such as screw, bolt, clip and can not resemble the element that copper produces pollution again).In addition, heat reflector 320 can adopt technology such as plating, sputter, anodic oxidation attached on the inner surface 311.In one embodiment, adopt insulation securing members such as insulation screw, bolt, clip that heat reflector 320 and inner surface 311 are separated, between inner surface 311 and heat reflector 320, form the gap.
Fig. 7 and 8 shows first illustrative examples of heater 315 among Fig. 6.With reference to figure 7, Fig. 8, heater 315 comprises chuck 319, and chuck 319 is made of Heat Conduction Materials such as aluminium, nickel, steel, is suitable in 307 homogeneous radiation heat and anti-processing and can produce the material that copper pollutes.Heating element 717 is arranged in the slit that is formed in the chuck 319 continuously.Heating element 717 is in order to radiations heat energy in chuck 319 continuously.Can pass through frictional fit, welding, use the packing material 313 that can not produce copper and/or silver pollution, or adopt bonding agents such as pressure adhesive, ceramic bonding agent, glue, or anti-processing such as screw, bolt, clip and can not produce the securing member that copper pollutes, continuous heating element 717 is fixed in the slit 314.In one embodiment, at chuck 319 with provide more closely between the heating element 717 continuously and cooperate, heating element 717 has the thermal coefficient of expansion higher than chuck 319 continuously.Though in a scheme, the thermal coefficient of expansion of heating element 717 is about α=17 continuously, and the thermal coefficient of expansion of chuck 319 is about α=13, also can adopt other thermal coefficient of expansion.
Pair of connectors 318 is connected on the power supply (not shown) such as external power source, so that give continuous heating element 717 power supplies.Though it is preferably to be used for providing even heating to whole chuck 319 that continuous heating element 717 is set to single uniform heating parts, a plurality of heating elements that independently separate such as resistance heater, heating lamp also can be joined together to form continuous heating element 717.In addition, chuck 319 can be heated by a plurality of independent heaters that are distributed in discrete connection on the whole chuck 319.
Fig. 9 shows the illustrative examples of heated substrate support 340 and fulcrum post 342, substrate 328 and spaced apart wherein through the substrate support 340 of heating, and support by fulcrum post 342, so that form the bottom of heating space 322.In one embodiment, as shown in Figure 5, the quantity of fulcrum post 342 is at least six, and four fulcrum posts 342 are substantially evenly spaced apart along the substrate periphery, with the edge of abundant supporting substrate 328, and the centre of two fulcrum post 342 close substrates 328.Perhaps, also can adopt any amount of fulcrum post 342 of being lined up any structure to come supporting substrate 328.Fulcrum post 342 preferably is made of insulator, is designed to the insulator that contacts minimum with substrate 328 as polymer, pottery and cross section, to prevent the conduction between heated substrate support 340 and the substrate 328.For extra support strength is provided, fulcrum post 342 also can comprise conductor, as steel, aluminium, nickel and have enough little surface area so that conduction is minimum and anti-processing can't produce the conductor that copper pollutes.Although in a scheme, fulcrum post 342 comprises the tip, so that minimize with contacting of substrate 328, but fulcrum post 342 also can have the profile of any tip, can make the minimized shape of heat conduction of heated substrate support 340 as round tip, square tip, flat tip and other.
Figure 10 is the top view of the illustrative examples of heated substrate support 340 among Fig. 9, wherein heated substrate support 340 comprises multi-disc baffle heater 347, and they can be arranged in the material layer of partiting thermal insulations such as fibrous glass, glass, pottery, asbestos or similar material.Baffle heater 347 can be resistance heater, radial burner etc.Baffle heater 347 can be powered by the power supply (not shown) and be started, and this power supply can be the external power source that connects by connector 345.Usually, temperature on the whole substrate surface changes as the function of substrate body thermophoresis, this is because the conduction in chamber 140 and the thermophoresis of convection current are caused the degree of closeness of heated substrate support 340, fulcrum post 342, heater 315 and the whole heat distribution in the chamber 307 etc.In one embodiment, baffle heater 347 is handled through medelling, with coupling and compensates for substrate thermal loss, i.e. substrate thermal loss distribution curve.For example, near the comparatively dense and disperseing in the centre bight of the baffle heater 347 shown in Figure 10 is so that provide more concentrated heat to the bight and the edge of substrate 328, bigger at conduction and/or radiation heat loss's vector in these places.Though heat is tending towards usually from the substrate edge radiation, the heat profiles of handling through medelling but can satisfy different substrate thermal loss distributions.For example, baffle heater 347 can be designed to by the size that changes them, at interval, resistivity, illuminance, input power etc. to be providing the variable thermal output that adds, thereby more meet substrate thermal loss distribution curve.And shown in Fig. 3,4 and 6, heated substrate support 340 separates by fulcrum post 342 and substrate 328, thereby makes the heat that gives off between the upper surface of the lower surface of substrate 328 and heated holder mix (so that distributing more even) mutually.Though in a scheme, the interval between heated substrate support 340 and the substrate 328 is about 20mm, also can utilize other interval.Though it is generally acknowledged the radiant heat from heated substrate support 340 mixed before substrate 328 heating mutually, the focus of baffle heater structure qualification is minimized, but substrate 328 can also be for directly being placed on the heated substrate support 340, and baffle heater is designed to be complementary basically with substrate thermal loss distribution curve.
In when operation, by mechanical arm 113 with substrate 328 in window 235 is placed on chamber 307 on the heated substrate support 340, thereby the heat treated of starting heating chamber 140.Inertization gases such as nitrogen pass through in 360 inflow chambers 307 of gas access, and remain on needed chamber pressure by vacuum pump 390.Perhaps, handling gas can be the fluorine isoreactivity gas that is suitable for special processing.Chamber 307, is cooperated heat reflector 320 to be heated to required ambient level, thereby is enough to provide the homogeneous substrate heat profiles perhaps only by heater 315 by the radiation of heater 315 and heated substrate support 340.In one or more embodiment, single substrate 328 evenly is heated to the substrate body temperature between about 350 ℃ to about 600 ℃.Change (being that normal temperature changes) between ± 5 ℃ of peace treaty ± 10 approximately ℃ corresponding to the reference temperature of temperature on the substrate body.
For example, in a kind of method of operation, through window 235 substrate 328 is placed in the chamber 307 of heating on the lining support 340 by mechanical arm 113, thus the heat treatment of starting heating chamber 140.Vacuum in the chamber 307 remains about 0 to about 0.5 torr by vacuum pump 390.Handle gas such as nitrogen by in 360 inflow chambers 307 of gas access, be maintained at about by vacuum pump 390 under the chamber pressure of 0.0 to 0.5 torr.Heat puts on substrate through heater 315 and heated holder 340, arrives about 600 ℃ temperature so that each substrate is heated to about 450 ℃ equably.Each substrate keeping under about 450 ℃ substrate body temperature being about ± 5 ℃ and under about 600 ℃ substrate body temperature, keep being about ± 10 ℃ standardization variations in temperature.For example, Figure 11 is the isollaothermic chart of substrate 328 in about 500 ℃ heat-treatment process, utilizes boundary temperature as standard value, and the normal temperature that shows in substrate 328 bodies changes.The 350A district is a reference zone, therefore has the zero-temperature coefficient changing value.The 350B district has approximately ± 1 ℃ normalized temperature variation.The 350C district has pact ± 2 ℃ of normalized temperature variation.The 350D district has pact ± 3 ℃ of normalized temperature variation.The 350E district has pact ± 5 ℃ of normalized temperature variation.Therefore, the normalized temperature variation on whole substrate 328 be about ± 5 ℃.
Figure 12 is the perspective view of another embodiment of heating chamber 140 among Fig. 1-11, and reference marker is a heating chamber 140 ' in Figure 12.With reference to Figure 12, heating chamber 140 ' comprises district's 215 (for example going up bell clamping jaw) and inferior segment 217 (bell clamping jaw for example).But in the heating chamber 140 ' in Figure 12, load window 235 and constitute by the inferior segment shown in the part 217 (with its global formation or fixed thereon).In this way, distinguishing 215 on directly contacts with inferior segment 217.Perhaps, loading window 235 can also upward be made of in district 215 part.Can also utilize connector 230 Jiang Shang districts 215 and inferior segment 217 to connect together, load the part that window 235 can form or not form connector 230.
Figure 13 is the perspective view of heating chamber 140 ' among Figure 12, has removed going up of it and has distinguished 215, so that can expose the secondary heater 315 around substrate box 310.Similarly secondary heater 315 can be around the substrate box 310 in the inferior segment 217.Figure 14 is the perspective view of heating chamber 140 ' among Figure 12, has removed its upward district 215 and secondary heater 315, so that can expose substrate box 310.Figure 15 is the perspective view of going up district 215 of heating chamber 140 ', shows the secondary heater 315 (for example clip or other securing members 1502) that He Shang district 215 sidewalls link to each other.Figure 16 is the perspective view of the inferior segment 217 of heating chamber 140 ', shows the secondary heater 315 (for example clip or other securing members 1502) that links to each other with inferior segment 217 sidewalls.Heating chamber 140 ' is similar among Fig. 1-11 heating chamber 140 ground and operates.
As mentioned above, it is very crucial in the flat-panel monitor manufacture process to control the inhomogeneity ability of large-scale substrate (for example 730mm * 920mm or bigger).In heat treatment process, heteropical heating can cause that film thickness and/or quality change, insufficient and/or pollutant or annealing are removed inhomogeneous etc.The uneven reason of substrate is exactly the thermal loss at substrate edge place, thereby causes the middle section with respect to substrate, and substrate has lower temperature in edge.When sizes of substrate increased, it is more remarkable that the uneven temperature problem just becomes, and this is a great challenge to flat panel display industry for (when sizes of substrate continues to increase).
The inventor has been found that: compare near the central authorities/sidewall areas of heating chamber 140,140 ' upper and lower region 215,217, if near the bight/sidewall of upper and lower region 215,217, apply more heat, then in heating chamber 140,140 ', can obtain obvious improved substrate heating uniformity.
Figure 17 is Fig. 6-8,13, the front view of another embodiment of secondary heater 315 ' of the present invention in 15 and/or 16.In the embodiment of Figure 17, secondary heater 315 ' comprises and Fig. 2-4 and/or 12-14 in the opening 1700 that is arranged side by side of window 235 so that make substrate can pass in and out above-mentioned substrate box 310.It is contemplated that in heating chamber 140,140 ' and can also construct another secondary heater 315 ' similarly.In a particular embodiment, can use eight secondary heater 315 ' (respectively near heating chamber 140,140 ' upper and lower region 215,217 each sidewall).Usually, every section sidewall all can more or less use a secondary heater.
With reference to Figure 17, secondary heater 315 ' comprises first thermal treatment zone 1702 and second thermal treatment zone 1704.As shown in the figure, first thermal treatment zone 1702 extends to a segment distance D in the secondary heater 315 ' from each edge E1-3 of secondary heater 315 '.Remaining secondary heater 315 ' forms second thermal treatment zone 1704.As shown in the figure, the top E4 of secondary heater 315 ' is comprised in second thermal treatment zone 1704.In this way, secondary heater 315 ' among Figure 17 can be arranged in heating chamber 140,140 ' the inferior segment 217 (for example the sidewall of contiguous inferior segment 217 and/or have window 235 be formed at this connector 230), extra secondary heater 315 ' can be arranged on heating chamber 140,140 ' go up in the district 215 thereon, thereby heating chamber 140,140 ' upper and lower district 215,217 can be heated.Figure 18 shows two secondary heater 315 ', and they connect together in heating chamber 140,140 ' upper and lower region 215,217.Can utilize any suitable mechanism that these secondary heater 315 ' are connected together.Figure 18 illustrates an exemplary locations of above-mentioned opening 1700.
With reference to Figure 17,18, first thermal treatment zone 1702 of secondary heater 315 ' is formed in the heating process can provide more heat (for example bigger power density, Watt density) than second thermal treatment zone 1704.As mentioned above with as described below, the thermal loss that this " heterogeneous " or " controlled " heating can the compensates for substrate edge.For example, relative second thermal treatment zone 1704, by with extra energy delivery to first thermal treatment zone 1702, can in first thermal treatment zone 1702, obtain the heat that increases.With reference to Figure 19, in a following embodiment, this can pass through relative second thermal treatment zone 1704, and the density that increases stratie in first thermal treatment zone 1702 is finished.Interchangeable or extra, when using stratie, can use independent power supply that electric energy is provided with stratie in first thermal treatment zone 1702 and second thermal treatment zone 1704.In this way, more electric energy can be provided with first thermal treatment zone 1702, increase the heat that the there is produced.In another embodiment, can use one or more extra heating source (for example, lamp formula heater) to increase the generation heat of first thermal treatment zone 1702.Extra like this heating source can be used as or can be not yet as the part of secondary heater 315 '.Can also adopt other relative second thermal treatment zone 1704 to regulate any structure of first thermal treatment zone, 1702 heating or near any structure of the heating in side plate bight that employing increases upper and lower region 215,217.
Figure 19 shows the illustrative examples of secondary heater 315 ' among Figure 17.Referring to Figure 19, secondary heater 315 ' comprises stratie 1902, and this element forms continuous serpentine path in whole heater 315 '.Can also use a more than stratie, as first, second thermal treatment zone 1702,1704 the discrete resistors heating element.As shown in figure 19, stratie 1902 has the more turning and/or the number of turn in first thermal treatment zone, 1702 internal ratios in second thermal treatment zone 1704, form the higher unit are heating element density of efficient thereby compare second thermal treatment zone 1704 in first thermal treatment zone 1702.Therefore, when to stratie 1902 power supplies, compare second thermal treatment zone 1704, in first thermal treatment zone 1702, can produce more heat.As further described below, can be by the suitable heating operation of employing first, second thermal treatment zone 1702,1704 in, in heating chamber 140,140 ', carry out substrate heat treated more equably.This processing can provide uniform heating for large-scale substrate (for example 730mm * 920mm or bigger).Figure 20 shows two secondary heater 315 ', and each has all utilized stratie 1902, and they connect together in heating chamber 140,140 ' upper and lower region 215,217.
In an illustrative examples of the present invention, when using heating chamber 140,140 ' to heat to have the glass substrate that is approximately 730mm * 920mm size, each secondary heater 315 ' is all constructed to such an extent that make first thermal treatment zone 1702 can give birth to about 20% power densities than second thermal treatment zone, 1704 fecund.Certainly, also can utilize between first, second thermal treatment zone 1702,1704 other power density variable.As mentioned above, first thermal treatment zone 1702 is from each edge E of secondary heater 315 '
1-3Put in secondary heater 315 ' one segment distance D (Figure 17).
In the embodiment of heating 730mm * 920mm substrate, first thermal treatment zone 1702 is from each edge E of secondary heater 315 '
1-3The distance D that puts in is approximately 5 inches, and the width of second thermal treatment zone 1704 is approximately 24.4 inches (integral width of secondary heater 315 ' is 34.4 inches).In this embodiment, the ratio of the distance D of first thermal treatment zone 1702 and heater integral width is roughly 5/35=1/7.In at least one embodiment of the present invention, even heating chamber 140,140 ' is configured to heat the substrate of other sizes, this ratio also remains unchanged.For instance, if heating chamber 140,140 ' is configured to heat the substrate of 1460mm * 1840mm, distance D can be about 10 inches, and then the whole width of heater is about 70 inches (1702 to the second thermals treatment zone, the thermal treatment zone, first/edge, 1704 fecund of heater 315 ' are given birth to about 20% power density).
The height of secondary heater 315 ' depends on the height of the upper and lower region 215,217 of institute's use heater.Also can adopt the heater of other sizes and first, second thermal treatment zone 1702,1704 of other sizes.
In at least one embodiment, secondary heater 315 ' all is arranged at a distance of each sidewall of heating chamber 140,140 ' upper and lower region 215,217 about 2 inches and at a distance of the about 1.7 inches position of substrate box 310.Certainly, also can adopt other apart from size.
The middle section (for example second thermal treatment zone 1704) of relative secondary heater 315 ', edge (for example first thermal treatment zone 1702) along secondary heater 315 ' increases heating, and/or utilize ceramic contour heat generation coating on the secondary heater 315 ', by these means, just can in heating chamber 140,140 ', obtain height even temperature distribution curve.For example increase the edge heating but also used on the whole 730mm * 920mm substrate (having about 518 ℃ mean temperature) of ceramic coating not only utilizing, the inventor has obtained to be had only ± 1.5 ℃ temperature change value.
Although the front is illustrated embodiments of the invention, under the situation that does not break away from base region of the present invention, can also implement other and further embodiment of the present invention, and scope of the present invention is limited by subsequently claims.
Claims (26)
1. device in order to heated substrate comprises:
Process chamber with bottom and top;
A plurality of above-mentioned indoor setting through warmed-up supporting member, in order to support at least two substrates on it;
Above-mentioned indoor and be arranged on the sidewall of above-mentioned chamber and the heater between a plurality of substrate support, have marginal zone and central area, described marginal zone extends to described bottom from the described top of described process chamber, above-mentioned heater is suitable for comparing in central area, can produce more heat in the marginal zone.
2. device as claimed in claim 1 further comprises, one or more is arranged on the stratie in the above-mentioned heater.
3. device as claimed in claim 1 is characterized in that, a plurality of warmed-up supporting members comprise a plurality of heating elements.
4. device as claimed in claim 1 is characterized in that above-mentioned heater is coated with the material with the radiance that can improve photothermal transmission.
5. device as claimed in claim 1 is characterized in that, 20% power density is given birth in the marginal zone of above-mentioned heater than the central area fecund of heater.
6. device as claimed in claim 1 is characterized in that, when treatment temperature was higher than 450 ℃, above-mentioned process chamber kept the temperature profile curve of ± 1.5 ℃ or littler temperature change value.
7. device as claimed in claim 1 is characterized in that, above-mentioned a plurality of supporting members can support has the substrate of 730mm * 920mm size at least.
8. device as claimed in claim 7 is characterized in that, when treatment temperature was higher than 450 ℃, above-mentioned process chamber kept the temperature profile curve of ± 1.5 ℃ or littler temperature change value.
9. device as claimed in claim 1 is characterized in that, described heater also is suitable for and is arranged to provide the heat profiles that is complementary basically with substrate thermal loss distribution curve.
10. method in order to heated substrate comprises:
A kind of device is provided, has:
Process chamber with bottom and top;
A plurality of above-mentioned indoor setting through warmed-up supporting member, in order to support at least two substrates on it;
Above-mentioned indoor and be arranged on the sidewall of above-mentioned chamber and the heater between a plurality of substrate support, have marginal zone and central area, described marginal zone extends to described bottom from the described top of described process chamber, above-mentioned heater is suitable for comparing in central area, can produce more heat in the marginal zone;
Use the said apparatus heated substrate.
11. method as claimed in claim 10 further comprises, when treatment temperature is higher than 450 ℃, keeps the temperature profile curve of ± 1.5 ℃ or littler temperature change value in above-mentioned process chamber.
12. method as claimed in claim 10 is characterized in that, uses the said apparatus heated substrate to comprise and produces the heat profiles that is complementary basically with substrate thermal loss distribution curve.
13. the method in order to heated substrate comprises:
A plurality of substrates at a plurality of warmed-up supporting member upper supports in process chamber, this chamber conforms to above-mentioned a plurality of warmed-up supporting member shapes but is big a little;
The set handling temperature is between 450 ℃～600 ℃;
In above-mentioned indoor formation vacuum;
More many mode of heat by means of in the marginal zone of at least one secondary heater, producing central area than above-mentioned at least one heater, utilize near the evenly above-mentioned substrate of heating of above-mentioned at least one secondary heater of a plurality of warmed-up supporting members, described marginal zone extends to described bottom from the described top of described process chamber.
14. method as claimed in claim 13 further comprises, when treatment temperature is higher than 450 ℃, keeps the temperature profile curve of ± 1.5 ℃ or littler temperature change value in above-mentioned process chamber.
15. method as claimed in claim 13 further comprises, when treatment temperature is between 450 ℃～600 ℃, keeps the temperature profile curve of ± 1.5 ℃ or littler temperature change value in above-mentioned process chamber.
16. method as claimed in claim 13 further comprises, is arranged under 0.5 torr or the lower pressure at the above-mentioned indoor gas of will handling.
17. method as claimed in claim 16 is characterized in that, above-mentioned processing gas is nitrogen.
18. method as claimed in claim 13 is characterized in that, evenly heats the heat profiles that above-mentioned substrate comprises that generation and substrate thermal loss distribution curve are complementary basically.
19. a device that is used for heated substrate comprises:
One process chamber has:
Last district;
And the continuous inferior segment in He Shang district;
It is characterized in that upper and lower region defines the chamber that a plurality of substrates in clamping betwixt;
Said apparatus also comprises:
Have a plurality of be arranged in the above-mentioned chamber and, in order to supporting and heat above-mentioned a plurality of substrate through the substrate box of warmed-up supporting member;
Be arranged on the heater in the above-mentioned chamber, in order in above-mentioned substrate box, to provide heat, above-mentioned heater comprises first thermal treatment zone and second thermal treatment zone, the unit are heating element density of first thermal treatment zone will be higher than the unit are heating element density of second thermal treatment zone, and wherein, described first thermal treatment zone extends to described inferior segment from the described district of described process chamber.
20. device as claimed in claim 19 is characterized in that, a plurality of warmed-up supporting members comprise a plurality of heating elements.
21. device as claimed in claim 19 is characterized in that, above-mentioned heater is coated with the material with the radiance that can improve photothermal transmission.
22. device as claimed in claim 19 is characterized in that, above-mentioned first thermal treatment zone is the marginal zone of heater, and second thermal treatment zone is the central area of heater.
23. device as claimed in claim 19 is characterized in that, 20% power density is given birth in first thermal treatment zone of above-mentioned heater than second thermal treatment zone fecund of heater.
24. device as claimed in claim 19 is characterized in that, when treatment temperature was higher than 450 ℃, above-mentioned process chamber kept the temperature profile curve of ± 1.5 ℃ or littler temperature change value.
25. device as claimed in claim 19 is characterized in that, above-mentioned a plurality of supporting members can support has the substrate of 730mm * 920mm size at least.
26. device as claimed in claim 25 is characterized in that, when treatment temperature was higher than 450 ℃, above-mentioned process chamber kept the temperature profile curve of ± 1.5 ℃ or littler temperature change value.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43406402P | 2002-12-17 | 2002-12-17 | |
| US60/434,064 | 2002-12-17 | ||
| PCT/US2003/039783 WO2004061914A2 (en) | 2002-12-17 | 2003-12-15 | Chamber for uniform substrate heating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1748285A CN1748285A (en) | 2006-03-15 |
| CN1748285B true CN1748285B (en) | 2010-04-28 |
Family
ID=32713006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200380109616.2A Expired - Lifetime CN1748285B (en) | 2002-12-17 | 2003-12-15 | Chamber for uniform substrate heating |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2006515433A (en) |
| KR (1) | KR101035828B1 (en) |
| CN (1) | CN1748285B (en) |
| AU (1) | AU2003297065A1 (en) |
| TW (1) | TWI279828B (en) |
| WO (1) | WO2004061914A2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7326877B2 (en) * | 2004-12-01 | 2008-02-05 | Ultratech, Inc. | Laser thermal processing chuck with a thermal compensating heater module |
| KR100707788B1 (en) * | 2005-02-04 | 2007-04-13 | 주식회사 테라세미콘 | TFT LCD annealing Method and TFT LCD annealing System |
| KR101073550B1 (en) | 2009-10-29 | 2011-10-14 | 삼성모바일디스플레이주식회사 | Apparatus for thermal processing of substrate |
| CN102300342A (en) * | 2010-06-24 | 2011-12-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Support plate heating device and plasma processor using same |
| US8517657B2 (en) * | 2010-06-30 | 2013-08-27 | WD Media, LLC | Corner chamber with heater |
| CN102508381B (en) * | 2011-11-29 | 2015-02-11 | 深圳市华星光电技术有限公司 | Baking device for liquid crystal display panel |
| CN104269368A (en) * | 2014-08-29 | 2015-01-07 | 沈阳拓荆科技有限公司 | Device and method utilizing front end module for heating wafers |
| JP2019119903A (en) * | 2017-12-28 | 2019-07-22 | キヤノントッキ株式会社 | Device for heating substrate and film deposition apparatus |
| CN113227445B (en) * | 2018-12-27 | 2023-03-28 | 株式会社爱发科 | Vacuum processing apparatus |
| CN112363335A (en) * | 2020-11-12 | 2021-02-12 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel baking equipment |
| CN114959659B (en) * | 2022-03-31 | 2023-11-28 | 松山湖材料实验室 | Heating device for heating sample |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626680A (en) * | 1995-03-03 | 1997-05-06 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3474258B2 (en) * | 1994-04-12 | 2003-12-08 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
| KR100245260B1 (en) * | 1996-02-16 | 2000-02-15 | 엔도 마코토 | Wafer heating apparatus of semiconductor manufacture device |
| US6310328B1 (en) * | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US6765178B2 (en) * | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
-
2003
- 2003-12-15 CN CN200380109616.2A patent/CN1748285B/en not_active Expired - Lifetime
- 2003-12-15 AU AU2003297065A patent/AU2003297065A1/en not_active Abandoned
- 2003-12-15 WO PCT/US2003/039783 patent/WO2004061914A2/en active Application Filing
- 2003-12-15 JP JP2004565462A patent/JP2006515433A/en not_active Withdrawn
- 2003-12-16 TW TW92135659A patent/TWI279828B/en not_active IP Right Cessation
- 2003-12-16 KR KR1020030091832A patent/KR101035828B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626680A (en) * | 1995-03-03 | 1997-05-06 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200416798A (en) | 2004-09-01 |
| WO2004061914A2 (en) | 2004-07-22 |
| TWI279828B (en) | 2007-04-21 |
| CN1748285A (en) | 2006-03-15 |
| KR101035828B1 (en) | 2011-05-20 |
| JP2006515433A (en) | 2006-05-25 |
| WO2004061914A3 (en) | 2008-01-17 |
| AU2003297065A1 (en) | 2004-07-29 |
| AU2003297065A8 (en) | 2008-03-13 |
| KR20040054514A (en) | 2004-06-25 |
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