KR20100032812A - Cvd apparatus and substrate processing system - Google Patents

Cvd apparatus and substrate processing system Download PDF

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KR20100032812A
KR20100032812A KR1020090040815A KR20090040815A KR20100032812A KR 20100032812 A KR20100032812 A KR 20100032812A KR 1020090040815 A KR1020090040815 A KR 1020090040815A KR 20090040815 A KR20090040815 A KR 20090040815A KR 20100032812 A KR20100032812 A KR 20100032812A
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reaction
substrate
gas supply
gas
unit
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장경호
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주식회사 테스
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A chemical vapor deposition apparatus and substrate processing system using the same forms the reaction space which at the same time can process the substrate of the different field inside one chamber a plurality of. The action efficiency and board processing productivity of the apparatus can be improved. CONSTITUTION: Reaction spaces(S11, S12) in which the processing of substrate is included in inside is each other communicated and a process chamber(210) is at least formed over two. Two or more gas supply units(220) is arranged in each reaction space upper. In order to be arranged in each reaction space lower and it is near in each gas supply unit two or more substrate seating units(240) is ascended and descended. It surrounds the upper of reaction spaces and the housing is divided by the state separated as the interval in the edge of the substrate seating unit. The reaction gas is exhausted to the separate space with the substrate seating unit. A conveying unit(250) transfers the substrate flowed in among the reaction space in one to the reaction space which is near.

Description

화학기상증착 장치와 이를 이용한 기판 처리 시스템{CVD APPARATUS AND SUBSTRATE PROCESSING SYSTEM}Chemical vapor deposition apparatus and substrate processing system using the same {CVD APPARATUS AND SUBSTRATE PROCESSING SYSTEM}

본 발명은 화학기상증착 장치와 이를 이용한 기판 처리 시스템에 관한 것으로서, 보다 상세하게는 하나의 챔버 내에 기판을 처리하는 다수의 반응공간을 형성하고, 반응공간 사이에서 기판을 이송하는 이송유닛을 마련하여 기판의 생산성을 향상시킬 수 있는 화학기상증착 장치와 이를 이용한 기판 처리 시스템에 관한 것이다.The present invention relates to a chemical vapor deposition apparatus and a substrate processing system using the same, and more specifically, to form a plurality of reaction space for processing the substrate in one chamber, and to provide a transfer unit for transferring the substrate between the reaction space The present invention relates to a chemical vapor deposition apparatus capable of improving productivity of a substrate and a substrate processing system using the same.

반도체 소자를 제조하기 위한 공정에서 기판 표면에서 반응기체를 반응시켜서 필요한 재질의 막을 형성하는 공정을 화학기상증착(Chemical Vapor Deposition; 이하 "CVD"라 한다) 공정이라 하며, CVD 공정이 진행되는 화학기상증착 장치는 일반적으로 내부에 기판의 처리가 이루어지는 반응공간이 형성되는 챔버와, 상기 반응공간에 구비되어 기판이 안착되는 기판 안착유닛 및 기판에 반응가스를 공급하는 가스공급유닛으로 이루어져서, 한 번의 공정으로 한 장의 기판을 처리하는 것이 일 반적이다.In the process of manufacturing a semiconductor device, a process of forming a film of a required material by reacting a reactant on a surface of a substrate is called chemical vapor deposition (hereinafter referred to as "CVD") process. The deposition apparatus generally includes a chamber in which a reaction space in which a substrate is processed is formed, a substrate seating unit provided in the reaction space, and a gas supply unit supplying a reaction gas to the substrate. It is common to treat a single substrate with one.

하지만, 하나의 챔버에서 한 장의 기판을 처리하는 기판 처리 시스템으로는 기판의 처리 생산성을 향상하는데 한계가 있었다. 따라서, 기판 처리 생산성을 향상시키고, 구성 유닛의 최적 작동을 위한 장치 및 방법의 개발이 필요하다.However, there has been a limitation in improving the processing productivity of a substrate with a substrate processing system that processes one substrate in one chamber. Accordingly, there is a need for development of apparatus and methods for improving substrate processing productivity and for optimal operation of component units.

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 하나의 챔버 내부에 여러 장의 기판을 동시에 처리할 수 있는 반응공간을 다수개 마련하고, 각각의 반응공간들 사이에서 기판을 이송할 수 있는 이송유닛을 마련하여 기판을 효율적으로 이송시키는 동시에 여러 장의 기판을 동시에 처리함에 따라 기판 처리 생산성을 향상시킬 수 있는 화학기상증착 장치와 이를 이용한 기판 처리 시스템을 제공한다.The present invention has been made in order to solve the above-described problems, a plurality of reaction spaces that can simultaneously process a plurality of substrates in one chamber, and transfer to transfer the substrate between the respective reaction spaces The present invention provides a chemical vapor deposition apparatus and a substrate processing system using the same, by providing a unit to efficiently transfer substrates and simultaneously processing a plurality of substrates.

상기와 같은 목적을 달성하기 위한 본 발명에 따른 화학기상증착 장치는 내부에 기판의 처리가 이루어지는 반응공간이 서로 연통되어 적어도 두 개 이상 형성되는 프로세스 챔버와; 상기 각각의 반응공간 상측에 배치되는 적어도 두 개 이상의 가스공급유닛과; 상기 각각의 반응공간 하측에 배치되고 상기 각각의 가스공급유닛에 근접되도록 승강되는 적어도 두 개 이상의 기판안착유닛과; 상승된 상기 기판안착유닛의 가장자리에서 일정한 간격만큼 이격된 상태로 상기 반응공간들의 상측을 둘러싸서 구획하고, 상기 기판안착유닛과의 이격공간으로 반응가스가 배기되도록 하는 하우징과; 상기 반응공간 중 어느 하나에 인입된 기판을 인접된 반응공간으로 이송시키는 이송유닛을 포함한다.Chemical vapor deposition apparatus according to the present invention for achieving the above object comprises a process chamber in which at least two reaction chambers in which the processing of the substrate is processed in communication with each other is formed; At least two gas supply units disposed above each reaction space; At least two substrate seating units disposed below the respective reaction spaces and lifted to approach each of the gas supply units; A housing surrounding the upper sides of the reaction spaces in a state spaced apart by a predetermined distance from the edge of the raised substrate seating unit, and allowing the reaction gas to be exhausted into a space separated from the substrate seating unit; It includes a transfer unit for transferring the substrate introduced into any one of the reaction space to the adjacent reaction space.

이때 상기 가스공급유닛은 상기 각각의 반응공간 상부에 배치되어 반응가스 를 반응공간에 분사하는 적어도 두 개 이상의 가스 분사부와; 상기 프로세스 챔버의 외부에 구비되어 상기 각각의 가스 분사부에 반응가스를 공급하는 반응가스 공급부와; 상기 반응가스 공급부에 연결되어 상기 각각의 가스 분사부로 반응가스가 유동되도록 분기되는 반응가스 공급라인을 포함한다.The gas supply unit may include at least two gas injectors disposed above the respective reaction spaces to inject the reaction gas into the reaction spaces; A reaction gas supply unit provided outside the process chamber to supply a reaction gas to each of the gas injection units; And a reaction gas supply line connected to the reaction gas supply part and branched to flow the reaction gas into the respective gas injection parts.

그리고, 상기 가스공급유닛은, 상기 프로세스 챔버의 외부에 구비되어 상기 각각의 가스 분사부에 세정가스를 공급하는 세정가스 공급부와; 상기 세정가스 공급부에 연결되어 상기 각각의 가스 분사부 및 상기 각각의 반응공간 측부로 반응가스가 유동되도록 분기되는 세정가스 공급라인을 포함한다.The gas supply unit may include: a cleaning gas supply unit provided outside the process chamber to supply a cleaning gas to each of the gas injection units; And a cleaning gas supply line connected to the cleaning gas supply unit and branched to flow the reaction gas to the respective gas injection units and the reaction space side.

또한, 상기 이송유닛은, 상기 프로세스 챔버의 반응공간들 사이에 구비되는 스핀들과; 상기 스핀들에 연결되어 상기 반응공간들 사이에서 회동되는 회동암과; 상기 스핀들을 회동시키는 회동 구동부를 포함한다.In addition, the transfer unit, the spindle provided between the reaction space of the process chamber; A rotational arm connected to the spindle and pivoted between the reaction spaces; It includes a rotation drive for rotating the spindle.

이때 상기 회동암은 일측에 상기 스핀들의 측방으로 연결되는 연결부와, 타측에 기판이 안착되는 안착부가 형성되는 것을 특징으로 한다.At this time, the pivoting arm is characterized in that the connection portion is connected to the side of the spindle on one side, the other side is formed with a seating portion for mounting the substrate.

또한, 상기 안착부는 상기 이송유닛에 구비되는 리프트핀의 설치 위치에 간섭되지 않도록 적어도 두 개 이상의 갈래로 분기되어 절곡되는 것을 특징으로 한다.In addition, the seating portion is characterized in that the bent branched to at least two or more so as not to interfere with the installation position of the lift pin provided in the transfer unit.

본 발명에 따른 기판 처리 시스템은 이송 챔버와; 내부에 기판의 처리가 이루어지는 반응공간이 서로 연통되어 적어도 두 개 이상 형성되고, 상기 각각의 반응공간 상측에는 적어도 두 개 이상의 가스공급유닛이 배치되며, 상기 각각의 반응공간 하측에는 상기 각각의 가스공급유닛에 근접되도록 승강되는 적어도 두 개 이 상의 기판안착유닛이 구비되고, 상승된 상기 기판안착유닛의 가장자리에서 일정한 간격만큼 이격된 상태로 상기 반응공간들의 상측을 둘러싸서 구획하고, 상기 기판안착유닛과의 이격공간으로 반응가스가 배기되도록 하우징이 구비되며, 상기 반응공간들 사이에서 기판을 각각의 반응공간으로 이송시키는 이송유닛이 구비되어 상기 이송 챔버에 연결되는 적어도 두 개 이상의 프로세스 챔버 모듈과; 상기 이송 챔버 내에 구비되고, 다수의 기판을 동시에 이송하기 위한 다수의 기판 핸들링 블레이드가 구비되는 핸들링 로봇과; 상기 이송 챔버에 연결되는 로드락 챔버를 포함하고, 상기 프로세스 챔버 모듈들은 핸들링 블레이드의 수와 대응되는 개수가 인접배치되어 상기 핸들링 로봇의 동작에 의해 상기 인접배치되는 프로세스 챔버 모듈들에 기판이 동시에 출입되는 것을 특징으로 한다.A substrate processing system according to the present invention includes a transfer chamber; At least two reaction spaces in which a substrate is processed are communicated with each other, and at least two gas supply units are disposed above each reaction space, and each gas supply is provided below each reaction space. At least two substrate seating units are provided which are lifted to be close to the unit, and are partitioned by surrounding the upper sides of the reaction spaces in a state spaced apart at regular intervals from the edge of the substrate seating unit that is raised. At least two process chamber modules including a housing configured to exhaust the reaction gas into a space of the reaction space, and a transfer unit configured to transfer the substrate to each reaction space between the reaction spaces and connected to the transfer chamber; A handling robot provided in the transfer chamber and having a plurality of substrate handling blades for simultaneously transferring a plurality of substrates; And a load lock chamber connected to the transfer chamber, wherein the process chamber modules are arranged in a number corresponding to the number of the handling blades so that the substrate can simultaneously enter and exit the process chamber modules disposed adjacent to each other by the operation of the handling robot. It is characterized by.

본 발명에 따르면, 하나의 챔버 내에서 여러 장의 기판을 로딩하여 동시에 처리할 수 있는 장치를 마련함에 따라 장치의 동작 효율성 및 기판 처리 생산성을 향상시킬 수 있는 효과가 있다.According to the present invention, by providing a device that can be processed at the same time by loading a plurality of substrates in one chamber there is an effect that can improve the operating efficiency and substrate processing productivity of the device.

또한, 하나의 챔버에서 여러 장의 기판을 처리할 수 있기 때문에 다수개의 쌍으로 구비되는 챔버 중 선택되는 어느 하나를 예열 챔버로 활용할 수 있는 효과가 있다.In addition, since a plurality of substrates can be processed in one chamber, any one selected from a plurality of pairs of chambers can be utilized as a preheating chamber.

또한, 한 쌍의 챔버를 인접배치하여 하나의 핸들링 로봇으로 한 쌍의 챔버에 각각 기판을 출입시키고, 각각의 챔버 내에서 기판을 서로 다른 반응공간으로 이송 시킴에 따라 설비의 동선을 최소화할 수 있는 효과가 있다.In addition, by placing a pair of chambers adjacent to each other in a pair of chambers with a single handling robot, and to transfer the substrates to each reaction space in each chamber to minimize the movement of the equipment It works.

이하, 첨부된 도면을 참조하여 본 발명의 실시예를 더욱 상세히 설명하기로 한다. 그러나 본 발명은 이하에서 개시되는 실시예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다. 도면상에서 동일 부호는 동일한 요소를 지칭한다. Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

도 1은 본 발명에 따른 기판 처리 시스템을 개략적으로 보여주는 구성도이다. 도면에 도시된 바와 같이 본 발명에 따른 기판 처리 시스템은 이송 챔버(100)와; 상기 이송 챔버(100)에 연결되는 적어도 두 개 이상의 프로세스 챔버 모듈(200)과; 상기 이송 챔버(100) 내에 구비되어 기판을 이송시키는 핸들링 로봇(300)과; 상기 이송 챔버(100)에 연결되는 로드락 챔버(400)를 포함한다.1 is a schematic view showing a substrate processing system according to the present invention. As shown in the drawings, the substrate processing system according to the present invention includes a transfer chamber 100; At least two process chamber modules (200) connected to the transfer chamber (100); A handling robot 300 provided in the transfer chamber 100 to transfer a substrate; The load lock chamber 400 is connected to the transfer chamber 100.

이송 챔버(100)는 기판 처리 시스템의 중심부에 위치하여 상기 로드락 챔버(400) 내부에 대기 중인 기판(W)을 상기 프로세스 챔버(210)에 로딩 또는 언로딩할 수 있도록 이송 공간을 제공한다. 상기 이송 챔버(100)의 외주면의 형상은 사각형, 오각형, 육각형, 팔각형 등을 포함하는 다각형의 형상 또는 원형, 타원형의 형상으로도 제작이 가능하다. 본 실시예에서는 도 1에 도시된 바와 같이 사각형 형상으로 이송 챔버(100)를 제시하였다.The transfer chamber 100 is located at the center of the substrate processing system and provides a transfer space for loading or unloading the substrate W waiting in the load lock chamber 400 into the process chamber 210. The shape of the outer circumferential surface of the transfer chamber 100 can also be produced in the shape of a polygon, including a square, pentagon, hexagon, octagon, or the like, circular, oval. In this embodiment, the transfer chamber 100 is presented in a rectangular shape as shown in FIG. 1.

프로세스 챔버 모듈(200)은 기판에 박막을 증착시키거나 또는 박막을 식각시키는 공정이 이루어지는 수단으로서, 내부에 기판(W)의 처리가 이루어지는 반응공간(S11,S12 및 S21,S22)이 적어도 두 개 이상 형성되고, 상기 반응공간(S11,S12 및 S21,S22)들 사이에서 기판을 각각의 반응공간(S11,S12 및 S21,S22)으로 이송시키는 이송유닛(250)이 구비된다. 이러한 프로세스 챔버 모듈(200)은 상기 이송 챔버(100)의 일면에 각각 한 쌍씩 인접배치되도록 적어도 두 개 이상의 프로세스 챔버 모듈(200)이 구비된다. 예를 들어 본 실시예에서는 도면에 도시된 바와 같이 4면을 갖는 이송 챔버(100)의 일면에는 한 쌍의 로드락 챔버(400)가 연결되고, 나머지 3면에는 한 쌍씩의 프로세스 챔버 모듈(200a와 200b, 200c와 200d, 200e와 200f,)이 각각 인접되어 연결된다. 물론 로드락 챔버(400) 및 프로세스 챔버 모듈(200)의 배치 위치 및 개수는 제시된 실시예에 한정되지 않고, 로드락 챔버(400) 및 프로세스 챔버 모듈(200)이 한 쌍씩 인접 배치될 수 있다면 어떠하여도 무방하다.The process chamber module 200 is a means in which a process of depositing a thin film or etching a thin film on a substrate is performed. At least two reaction spaces S11, S12, S21, and S22 in which a substrate W is processed are formed. The transfer unit 250 is formed to transfer the substrate to the reaction spaces S11, S12, S21, and S22 between the reaction spaces S11, S12, S21, and S22. The process chamber module 200 is provided with at least two or more process chamber modules 200 to be disposed adjacent to each other by a pair on one surface of the transfer chamber 100. For example, in this embodiment, as shown in the figure, a pair of load lock chambers 400 are connected to one surface of the transfer chamber 100 having four sides, and a pair of process chamber modules 200a are connected to the other three surfaces. And 200b, 200c and 200d, 200e and 200f, respectively, are adjacently connected. Of course, the arrangement position and the number of the load lock chamber 400 and the process chamber module 200 is not limited to the embodiment shown, what if the load lock chamber 400 and the process chamber module 200 can be arranged adjacent to each other in pairs You may.

그리고, 각각의 프로세스 챔버 모듈(200)에는 기판(W)이 출입되는 게이트(217)가 상기 반응공간(S11,S12 및 S21,S22) 중 어느 하나로 연통되도록 하나씩 마련되는데, 이때 게이트(217)의 위치는 인접되는 프로세스 챔버 모듈(200) 및 이송 챔버(100)와 가까운 위치에 배치되는 반응공간(S11,S21)과 연통되도록 형성되는 것이 바람직하다. 상기 프로세스 챔버 모듈(200)의 상세한 구성에 대한 설명은 도면을 참조하여 후술하도록 한다.Each of the process chamber modules 200 is provided with one gate 217 through which the substrate W enters and exits from one of the reaction spaces S11, S12, S21, and S22. The position is preferably formed to be in communication with the adjacent process chamber module 200 and the reaction space (S11, S21) disposed in a position close to the transfer chamber 100. A detailed configuration of the process chamber module 200 will be described later with reference to the drawings.

핸들링 로봇(300)은 상기 이송 챔버(100)의 대략 중앙지점에 위치하여 로드 락 챔버(400)와 프로세스 챔버(210)로 기판(W)을 이송시키는 수단으로서, 지면과 평행한 면 상에서 회전 및 승하강되도록 구비된다. 이때 핸들링 로봇(300)에는 다수의 기판(W)을 동시에 직접 지지하는 다수의 핸들링 블레이드(310)가 구비된다. 상기 핸들링 블레이드(310)의 개수는 한 번의 동작으로 각각의 프로세스 챔버 모듈(200)에 한 장의 기판(W)을 로딩 및 언로딩시킬 수 있도록 인접배치되는 프로세스 챔버 모듈(200)의 개수에 대응되도록 형성하는 것이 바람직하다. 본 실시예에서는 두 개의 핸들링 블레이드(310)를 지면과 평행한 동일면 상에서 서로 평행하게 설치하였다. Handling robot 300 is a means for transferring the substrate (W) to the load lock chamber 400 and the process chamber 210 is located at approximately the center of the transfer chamber 100, the rotation and on a plane parallel to the ground It is provided to be raised and lowered. At this time, the handling robot 300 is provided with a plurality of handling blades 310 for directly supporting a plurality of substrates (W) at the same time. The number of the handling blades 310 corresponds to the number of adjacently arranged process chamber modules 200 to load and unload one substrate W into each process chamber module 200 in one operation. It is preferable to form. In this embodiment, two handling blades 310 are installed in parallel with each other on the same plane parallel to the ground.

로드락 챔버(400a,400b)는 상기 이송 챔버(100)의 일면에 형성되어 공정수행을 위해 대기중이거나, 처리가 완료된 기판들을 대기시키는 수단으로서, 이송 챔버(100) 및 프로세스 챔버 모듈(200) 내부의 공기압 상황에 따라 대기압 상태 또는 진공 상태로 변경이 가능하게 설치된다. 이때 로드락 챔버(400)의 개수는 상기 핸들링 블레이드(310)의 개수와 대응되도록 구비되는 것이 바람직하다. 예를 들어 본 실시예에서는 한 쌍의 로드락 챔버(400a,400b)를 구비하였다. 그리고, 로드락 챔버(400)의 외부에는 로드락 챔버(400)와 연결되어 기판(W)들을 수용하는 저장 랙(500)이 더 구비된다.The load lock chambers 400a and 400b are formed on one surface of the transfer chamber 100 to wait for process execution or to wait for processed substrates. The transfer chamber 100 and the process chamber module 200 may be used. Depending on the internal air pressure situation, it is possible to change the atmospheric pressure or vacuum state. At this time, the number of the load lock chamber 400 is preferably provided to correspond to the number of the handling blade 310. For example, in this embodiment, a pair of load lock chambers 400a and 400b are provided. In addition, a storage rack 500 connected to the load lock chamber 400 to accommodate the substrates W is further provided outside the load lock chamber 400.

도 2는 본 발명에 따른 화학기상증착 장치를 개략적으로 보여주는 단면 개념도이고, 도 3은 본 발명에 따른 화학기상증착 장치의 요부를 개략적으로 보여주는 평면도이며, 도 4는 본 발명에 따른 회동암을 보여주는 사시도이다.Figure 2 is a schematic cross-sectional view showing a chemical vapor deposition apparatus according to the present invention, Figure 3 is a plan view schematically showing the main part of the chemical vapor deposition apparatus according to the present invention, Figure 4 shows a rotatable rock according to the present invention Perspective view.

도면에 도시된 바와 같이 본 발명에 따른 화학기상증착 장치, 즉 프로세스 챔버 모듈(200)은 내부에 기판(W)의 처리가 이루어지는 반응공간(S11,S12)이 적어도 두 개 이상 형성되는 프로세스 챔버(210)와; 상기 각각의 반응공간(S11,S12) 상측에 배치는 가스공급유닛(220)과; 상기 각각의 반응공간(S11,S12) 하측에 배치되는 적어도 두 개 이상의 기판안착유닛(240)과; 상기 반응공간(S11,S12) 중 어느 하나의 반응공간(S11)에 인입된 기판(W)을 인접된 반응공간(S12)으로 이송시키는 이송유닛(250)을 포함한다.As shown in the drawing, the chemical vapor deposition apparatus according to the present invention, that is, the process chamber module 200 has a process chamber in which at least two reaction spaces S11 and S12 are formed in which a substrate W is processed. 210; A gas supply unit 220 disposed above each of the reaction spaces S11 and S12; At least two substrate seating units 240 disposed under the reaction spaces S11 and S12; It includes a transfer unit 250 for transferring the substrate (W) drawn in any one of the reaction space (S11, S12) of the reaction space (S11) to the adjacent reaction space (S12).

프로세스 챔버(210)는 내부에 적어도 두 개 이상의 반응공간(S11,S12)이 서로 연통되도록 마련되는 통 형상으로 제작된다. 이때, 상기 프로세스 챔버(210)의 내부 형상은 그 수평 단면 형상이 일정한 형태에 한정되지 않고, 공정이 진행되는 기판(W)의 형상에 따라 다양하게 변화될 수 있다. 본 실시예의 프로세스 챔버(210)는 측벽면과 바닥면을 구성하는 하부 몸체부(211)와, 상측면을 구성하는 상부 몸체부(213) 및 상기 하부 몸체부(211)에 수용되고, 프로세스 챔버(210)의 내부에서 상기 반응공간(S11,S12)들을 구획하는 하우징(215)으로 구성된다. 물론 상기 반응공간(S11,S12)들은 상기 하우징(215)이 설치되더라도 후술되는 이송유닛이 동작되는 공간을 확보하도록 연통되는 것이 바람직하다.The process chamber 210 is manufactured in a tubular shape in which at least two or more reaction spaces S11 and S12 communicate with each other. At this time, the internal shape of the process chamber 210 is not limited to the horizontal cross-sectional shape is a constant shape, it can be variously changed according to the shape of the substrate (W) in which the process is performed. The process chamber 210 of the present embodiment is accommodated in the lower body portion 211 constituting the side wall and the bottom surface, the upper body portion 213 and the lower body portion 211 constituting the upper side, the process chamber The interior of the 210 is composed of a housing 215 partitioning the reaction space (S11, S12). Of course, the reaction spaces S11 and S12 are preferably communicated with each other to ensure a space for the transfer unit to be described later, even if the housing 215 is installed.

그리고, 프로세스 챔버(210)의 측벽면의 일측에는 기판(W)의 인입 및 인출을 위한 게이트(217)가 상기 반응공간(S11,S12)들 중 어느 하나에 연통되도록 마련된다. 그리고, 상기 게이트(217)는 개폐부(미도시)에 의해 개폐된다. 이때, 상기 개폐부로 게이트 밸브 또는 슬릿 밸브를 사용하는 것이 가능하다. 물론 이에 한정되 지 않고, 개폐부로 기판(W) 인입후 프로세스 챔버(210) 내부를 진공으로 유지할 수 있는 다양한 형태의 개폐 수단이 사용될 수 있다. In addition, at one side of the sidewall surface of the process chamber 210, a gate 217 for drawing in and out of the substrate W is provided to communicate with any one of the reaction spaces S11 and S12. In addition, the gate 217 is opened and closed by an opening and closing portion (not shown). At this time, it is possible to use a gate valve or a slit valve as the opening and closing portion. Of course, the present invention is not limited thereto, and various types of opening and closing means capable of maintaining the vacuum inside the process chamber 210 after the substrate W is drawn into the opening and closing unit may be used.

또한, 프로세스 챔버(210)에 형성된 반응공간(S11,S12)의 바닥면 또는 측면의 일측에는 프로세스 챔버(210) 내부의 압력을 일정하게 유지하거나, 프로세스 챔버(210) 내부의 미반응 가스 및 불순물을 배기하기 위한 각각의 진공 배기 라인(218) 및 진공 배기 공급부(219)가 연결된다. 이때 각각의 반응공간(S11,S12)에는 진공 배기 라인(218) 및 진공 배기 공급부(219)가 각각 별도로 구비되거나 또는 하나의 진공 배기 공급부(219)에 각각의 반응공간(S11,S12)으로 분기되는 한 쌍의 진공 배기 라인(218)이 구비될 수 있다.In addition, one side of the bottom or side surfaces of the reaction spaces S11 and S12 formed in the process chamber 210 maintains a constant pressure inside the process chamber 210, or unreacted gas and impurities inside the process chamber 210. Each vacuum exhaust line 218 and a vacuum exhaust supply 219 for exhausting the gas are connected. In this case, each of the reaction spaces S11 and S12 is provided with a vacuum exhaust line 218 and a vacuum exhaust supply 219 separately or branched into one reaction space S11 and S12 in one vacuum exhaust supply 219. A pair of vacuum exhaust lines 218 may be provided.

그리고, 프로세스 챔버(210)는 접지 연결되어 프로세스 챔버(210)를 통하여 전류가 흐르지 않도록 구성된다.In addition, the process chamber 210 is configured to be grounded so that no current flows through the process chamber 210.

가스공급유닛(220)은 상기 각각의 반응공간(S11,S12) 상부에 배치되는 가스 분사부(221)와; 상기 프로세스 챔버(210)의 외부에 구비되어 상기 각각의 가스 분사부(221)에 반응가스를 공급하는 반응가스 공급부(223)와; 상기 반응가스 공급부(223)에 연결되어 상기 각각의 가스 분사부(221)로 반응가스가 유동되도록 분기되는 반응가스 공급라인(225)을 포함된다. 또한, 상기 프로세스 챔버(210)의 외부에 구비되어 상기 각각의 가스 분사부(221)에 세정가스를 공급하는 세정가스 공급부(227)와; 상기 세정가스 공급부(227)에 연결되어 상기 각각의 가스 분사부(221) 및 상기 각각의 반응공간(S11,S12) 측부로 세정가스가 유동되도록 분기되는 세정가스 공급라인(229)을 포함한다.The gas supply unit 220 includes a gas injection unit 221 disposed above the reaction spaces S11 and S12; A reaction gas supply unit 223 provided outside the process chamber 210 and supplying a reaction gas to each of the gas injection units 221; A reaction gas supply line 225 connected to the reaction gas supply unit 223 is branched to flow the reaction gas into the respective gas injection units 221. In addition, the cleaning gas supply unit 227 is provided outside the process chamber 210 to supply a cleaning gas to the respective gas injection unit 221; And a cleaning gas supply line 229 connected to the cleaning gas supply unit 227 so that the cleaning gas flows toward the respective gas injection units 221 and the reaction spaces S11 and S12.

상기 가스 분사부(221)는 반응공간(S11,S12) 내부에 반응 가스 및 세정 가스를 공급하고, 플라즈마 형성시 캐소드 또는 애노드 역할을 하는 수단으로서, 예를 들어 종래의 샤워헤드 구조가 적용될 수 있다. 물론 이에 한정되지 않고, 가스의 분사 및 캐소드 또는 애노드 역할을 할 수 있다면 다양하게 변경 가능하다. 본 실시예에서는 상기 가스 분사부(221)에 플라즈마 전원을 제공하기 위한 별도의 플라즈마 전원부(230)가 연결된다. 플라즈마 전원부(230)는 플라즈마 전원으로 고주파 전원을 제공한다.The gas injector 221 is a means for supplying a reaction gas and a cleaning gas into the reaction spaces S11 and S12 and acting as a cathode or an anode when plasma is formed. For example, a conventional shower head structure may be applied. . Of course, the present invention is not limited thereto, and various modifications may be made as long as the gas may serve as a cathode and an anode. In the present embodiment, a separate plasma power supply unit 230 for providing plasma power to the gas injection unit 221 is connected. The plasma power supply unit 230 provides a high frequency power supply to the plasma power supply.

상기 반응가스 공급부(223)는 기판(W)의 처리공정에 사용되는 각종 반응가스를 각각의 반응공간으로 제공하는 수단으로서, 반응가스를 공급할 수 있는 수단이라면 어떠하여도 무방하다.The reaction gas supply unit 223 is a means for providing various reaction gases used in the process of processing the substrate W to each reaction space, and may be any means capable of supplying the reaction gas.

상기 반응가스 공급라인(225)은 상기 반응가스 공급부(223)와 각각의 가스 분사부(221)가 연통되도록 형성된다면 어떠하여도 무방하나, 바람직하게는 하나의 반응가스 공급부(223)에 연결되는 반응가스 공급라인(225)이 각각의 가스 분사부(221)로 분기되어 형성된다. The reaction gas supply line 225 may be any type as long as the reaction gas supply unit 223 and each gas injector 221 are in communication with each other, but is preferably connected to one reaction gas supply unit 223. The reaction gas supply line 225 is formed to branch to each gas injector 221.

상기 세정가스 공급부(227)는 반응공간(S11,S12) 및 후술되는 안착 플레이트(241) 전면 및 후면의 세정공정에 사용되는 각종 세정가스를 각각의 반응공간(S11,S12)으로 제공하는 수단으로서, 세정가스를 공급할 수 있는 수단이라면 어떠하여도 무방하다.The cleaning gas supply unit 227 is a means for providing various cleaning gases used in the cleaning processes of the reaction spaces S11 and S12 and the front and rear surfaces of the seating plate 241 to be described later to the respective reaction spaces S11 and S12. It may be any means that can supply cleaning gas.

상기 세정가스 공급라인(229)은 상기 세정가스 공급부(227)와 각각의 반응공간(S11,S12)이 연통되도록 형성된다면 어떠하여도 무방하나, 바람직하게는 하나의 세정가스 공급부(227)에 연결되는 세정가스 공급라인(229)이 각각의 가스 분사부(221) 및 반응공간(S11,S12)의 측부, 바람직하게는 안착 플레이트(241)의 측부 방향으로 분기되어 형성된다. 이때 반응공간(S11,S12)의 측부로 분기되는 세정가스 공급라인(229)은 상기 하우징(215)을 통하여 연장될 수 있다.The cleaning gas supply line 229 may be formed so as to be in communication with the cleaning gas supply unit 227 and the reaction spaces S11 and S12, but is preferably connected to one cleaning gas supply unit 227. The cleaning gas supply line 229 is branched to the sides of each of the gas injection units 221 and the reaction spaces S11 and S12, and preferably to the side of the seating plate 241. In this case, the cleaning gas supply line 229 branched to the side portions of the reaction spaces S11 and S12 may extend through the housing 215.

기판안착유닛(240)은 기판(W)이 안착되는 안착 플레이트(241)와; 상기 안착 플레이트(241)에 구비되어 안착 플레이트(241)를 가열시키는 히팅부(243)와; 상기 안착 플레이트(241)를 상하로 이동시키는 승강 구동부(245)를 포함한다.The substrate seating unit 240 includes a seating plate 241 on which the substrate W is mounted; A heating part 243 provided on the seating plate 241 to heat the seating plate 241; It includes a lift drive unit 245 for moving the seating plate 241 up and down.

상기 안착 플레이트(241)는 기판(W)이 직접 안착되고, 플라즈마 형성시 캐소드 또는 애노드 역할을 하는 수단으로서, 상기 가스 분사부(221)에 대향되어 배치되고, 기판(W)의 형상에 대응되는 형상으로 형성되는 것이 바람직하고, 본 실시예에서는 원형으로 형성된다. 또한 본 실시예에서 상기 안착 플레이트(241)는 접지 연결된다. 물론 이에 한정되지 않고, 안착 플레이트(241)에 고주파 전원을 인가하고, 상기 가스 분사부(221)를 접지 연결시킬 수도 있을 것이다.The seating plate 241 is a means for directly seating the substrate W and acting as a cathode or an anode when plasma is formed. The mounting plate 241 is disposed to face the gas injector 221 and corresponds to the shape of the substrate W. It is preferable that it is formed in a shape, and in this embodiment, it is formed circular. In addition, in the present embodiment, the seating plate 241 is grounded. Of course, the present invention is not limited thereto, and a high frequency power may be applied to the seating plate 241, and the gas injector 221 may be grounded.

상기 히팅부(243)는 상기 안착 플레이트(241)에 안착된 기판(W)을 처리시 상승되는 온도에 의한 기판(W)의 열손상을 줄이기 위한 수단으로서, 기판(W)의 온도를 상승시킬 수 있다면 어떠한 수단이라도 사용될 수 있다. 예를 들어 전원의 공급에 의해 가열되는 열선과 같은 코어히터 또는 램프히터 등이 사용될 수 있다. The heating unit 243 is a means for reducing the thermal damage of the substrate (W) due to the temperature rising during processing the substrate (W) seated on the seating plate 241, to increase the temperature of the substrate (W) Any means may be used if possible. For example, a core heater or a lamp heater such as a heating wire heated by supply of power may be used.

상기 승강 구동부(245)는 상기 안착 플레이트(241)를 반응공간(S11,S12) 내부에서 기판(W)을 안착시키는 위치 및 기판(W)의 처리가 이루어지는 반응위치로 이동시키기 위하여 승강시키는 수단으로서, 상기 안착 플레이트(241)를 승강시킬 수 있는 수단이라면 어떠하여도 무방하다. 예를 들어 실린더가 사용될 수 있다.The elevating driving unit 245 is a means for elevating the mounting plate 241 to move the mounting plate 241 to a position where the substrate W is seated in the reaction spaces S11 and S12 and a reaction position at which the substrate W is processed. As long as it is a means which can raise and lower the said mounting plate 241, it may be any. For example, a cylinder can be used.

그리고, 상기 기판안착유닛(240)은 상기 안착 플레이트(241)를 관통하여 입설되는 복수개의 리프트핀(247)과, 상기 리프트핀(247)을 일체로 승강시키는 리프트핀 승강수단(249)을 더 포함한다. The substrate seating unit 240 further includes a plurality of lift pins 247 penetrating through the seating plate 241 and a lift pin lifting means 249 for raising and lowering the lift pins 247 integrally. Include.

상기 리프트핀(247)은 후술되는 회동암(253)과의 간섭을 피하고, 기판(W)의 안정적인 안착을 위하여 3개가 120도 간격으로 입설되는 것이 바람직하고, 상기 리프트핀 승강수단(249)은 실린더 등이 사용될 수 있다.Preferably, the lift pins 247 are installed at three intervals 120 degrees in order to avoid interference with the pivot arm 253 to be described later and to stably mount the substrate W. The lift pin lifting means 249 Cylinders and the like can be used.

상기 이송유닛(250)은 상기 프로세스 챔버(210)의 내부에 구성되는 수단으로서, 정확하게는 상기 프로세스 챔버(210)의 반응공간(S11,S12)들 사이에 구비되는 스핀들(251)과; 상기 스핀들(251)에 연결되어 상기 반응공간(S11,S12)들 사이에서 회동되는 회동암(253)과; 상기 스핀들(251)을 회동시키는 회동 구동부(255)를 포함한다.The transfer unit 250 is a means configured in the process chamber 210, and the spindle 251 is provided between the reaction space (S11, S12) of the process chamber (210) exactly; A rotation arm 253 connected to the spindle 251 and pivoted between the reaction spaces S11 and S12; It includes a rotation drive unit 255 for rotating the spindle 251.

상기 스핀들(251)은 상기 회동 구동부(255)에서 발생되는 회동 동력에 의해 상기 회동암(253)에 회동시키는 수단으로서, 인접되는 반응공간(S11,S12)들 사이 공간에 구비되는 것이 바람직하다. The spindle 251 is a means for rotating the pivot arm 253 by the rotational power generated by the rotation driver 255, and is preferably provided in a space between adjacent reaction spaces S11 and S12.

상기 회동암(253)은 도 4에 도시된 바와 같이 일측에 상기 스핀들(251)의 측방으로 연결되는 연결부(253a)와, 타측에 기판(W)이 안착되는 안착부(253b)가 형성된다.As shown in FIG. 4, the pivotal arm 253 has a connection part 253a connected to the side of the spindle 251 on one side and a seating part 253b on which the substrate W is seated on the other side.

상기 연결부(253a)는 상기 회동암(253)에 연결되도록 길게 형성되고, 상기 안착부(253b)는 상기 기판안착유닛(240)에 구비되는 리프트핀(247)의 설치 위치에 간섭되지 않도록 적어도 두 개 이상의 갈래로 분기된 상태에서 절곡되어 형성된다. 본 실시예에서는 연결부에서 연장되는 안착부(253b)가 대략 "T"자 형상이 되도록 분기하였고, 각각의 단부는 리프트핀(247)에 간섭되지 않도록 절곡하였다. 그리고, 상기 안착부(253b)에는 기판(W)의 크기에 대응되는 크기의 안착홈(253c)이 형성된다. 물론 상기 회동암(253)은 상기 스핀들(251)에 의해 회동되면서 기판(W)을 각각의 반응공간(S11,S12)으로 이송할 수 있는 다양한 방식으로 변경되어 실시될 수 있을 것이다.The connecting portion 253a is formed to be long to be connected to the pivot arm 253, and the seating portion 253b is at least two so as not to interfere with the installation position of the lift pin 247 provided in the substrate seating unit 240. It is bent and formed in a branched state into two or more branches. In the present embodiment, the seating portion 253b extending from the connecting portion is branched to have an approximately "T" shape, and each end is bent so as not to interfere with the lift pin 247. In addition, a seating groove 253c having a size corresponding to the size of the substrate W is formed in the seating portion 253b. Of course, the pivoting arm 253 may be rotated by the spindle 251 and may be changed in various ways to transfer the substrate W to the respective reaction spaces S11 and S12.

상기 회동 구동부(255)는 상기 스핀들(251)에 회동력을 제공하는 수단으로서, 상기 스핀들(251)을 회동시키는 동력을 제공할 수 있다면 어떠한 수단이 사용되어도 무방하다.The rotation driving unit 255 is a means for providing a rotational force to the spindle 251, any means may be used as long as it can provide power to rotate the spindle 251.

상기와 같이 구성되는 본 발명에 따른 기판 처리 시스템을 이용하여 기판을 처리하는 방법을 도면을 참조하여 설명하면 다음과 같다.Referring to the drawings, a method of processing a substrate using the substrate processing system according to the present invention configured as described above is as follows.

도 5a 내지 도 5k는 본 발명에 따른 기판 처리 시스템의 작동 상태를 보여주는 단면 개념도이다.5A to 5K are cross-sectional conceptual views showing an operating state of a substrate processing system according to the present invention.

도면에 도시된 바와 같이 본 발명에 따른 기판 처리 방법은 먼저, 전술된 이송 챔버(100), 로드락 챔버(400) 및 상기 이송 챔버(100)의 각 면에 한 쌍씩 인접배치되는 적어도 두 개 이상의 프로세스 챔버(210)를 포함하는 기판 처리 시스템을 마련한다.As shown in the drawings, the substrate processing method according to the present invention, first, the transfer chamber 100, the load lock chamber 400 and the at least two or more adjacently arranged in pairs on each side of the transfer chamber 100 A substrate processing system including a process chamber 210 is provided.

그리고, 저장 랙(500)에 수용되는 비처리 기판들을 로드락 챔버(400)에 인입하여 로드락 챔버(400)에 다수의 비처리 기판들을 대기시킨다. 그런 다음, 필요시 로드락 챔버(400)를 기판(W)의 처리 공정에 필요한 고진공 상태로 형성한다.Then, the unprocessed substrates accommodated in the storage rack 500 are introduced into the load lock chamber 400 to hold a plurality of unprocessed substrates in the load lock chamber 400. Then, if necessary, the load lock chamber 400 is formed in a high vacuum state necessary for the processing of the substrate (W).

그리고, 이송 챔버(100)에 구비된 핸들링 로봇(300)의 핸들링 블레이드(310)를 이용하여 로드락 챔버(400)에 대기중인 한 쌍의 제 1차 비처리 기판(W11,W12)을 척킹한 다음 인접된 프로세스 챔버(210)에 형성된 제 1 반응공간(S11,S21)으로 동시에 각각 로딩시킨다.And using the handling blade 310 of the handling robot 300 provided in the transfer chamber 100 chucking a pair of primary unprocessed substrate (W11, W12) waiting in the load lock chamber 400 Next, the first reaction spaces S11 and S21 formed in the adjacent process chamber 210 are simultaneously loaded.

제 1차 비처리 기판(W11,W12)을 각각의 제 1 반응공간(S11,S21)으로 로딩시키는 단계를 보다 상세하게 설명하자면, 먼저, 제 1 차 비처리 기판(W11,W12)을 로딩하기 위하여 이송유닛(250)의 회동암(253)을 각각의 제 1 반응공간(S11,S21)에 정위치 시키고 대기한다. 그런 다음, 도 5a에 도시된 바와 같이 인접된 프로세스 챔버(210)의 제 1 반응공간(S11,S21)에 각각 마련되는 제 1 및 제 2 리프트핀(2471,2472)의 대기 높이가 도면에 표시된 간격(D)만큼 격차를 갖도록 각각의 리프트핀(2471,2472)을 상승시키고, 한 쌍의 제 1차 비처리 기판(W11,W12)을 제 1 및 제 2 리프트핀(2471,2472) 상부로 인입시킨다. 그리고, 핸들링 로봇(300)의 핸들링 블레이드(310)를 수평면 상에서 좌우로 이동시켜 핸들링 블레이드(310)에 지지된 제 1차 비처리 기판(W11,W12) 중 상대적으로 높은 위치에서 대기하는 제 1 리프트핀(2471)의 상부에 배치되는 제 1 비처리 기판(W11)을 제 1 리프트핀(2471)의 상부에 정위치 시킨다.Loading of the first unprocessed substrates W11 and W12 into the respective first reaction spaces S11 and S21 will be described in detail. First, loading the first unprocessed substrates W11 and W12. In order to position the rotating arm 253 of the transfer unit 250 in each of the first reaction space (S11, S21) and wait. Then, as shown in FIG. 5A, the atmospheric heights of the first and second lift pins 2471 and 2472 respectively provided in the first reaction spaces S11 and S21 of the adjacent process chamber 210 are shown in the drawing. Lift pins 2471 and 2472 are lifted so as to have a gap D therebetween, and a pair of first unprocessed substrates W11 and W12 are moved over the first and second lift pins 2247 and 2472. Pull in. In addition, a first lift that moves the handling blade 310 of the handling robot 300 from side to side on a horizontal plane to wait at a relatively high position among the first unprocessed substrates W11 and W12 supported by the handling blade 310. The first unprocessed substrate W11 disposed above the pin 2471 is positioned at the top of the first lift pin 2247.

그런 다음, 도 5b에 도시된 바와 같이 핸들링 블레이드(310)를 하강하여 제 1차 비처리 기판(W11,W12) 중 제 1 비처리 기판(W11)을 제 1 리프트핀(2471)에 안착시킨다.Then, as illustrated in FIG. 5B, the handling blade 310 is lowered to seat the first unprocessed substrate W11 among the first unprocessed substrates W11 and W12 on the first lift pin 2247.

그리고, 핸들링 블레이드(310)를 수평으로 이동시켜 상대적으로 낮은 위치에 대기하는 제 2 리프트핀(2472)의 상부에 배치되는 제 1차 비처리 기판(W11,W12) 중 제 2 비처리 기판(W12)을 제 2 리프트핀(2472)의 상부에 정위치 시킨다.The second unprocessed substrate W12 of the first unprocessed substrates W11 and W12 disposed on the second lift pin 2472 that moves the handling blade 310 horizontally and waits at a relatively low position. ) Is positioned on top of the second lift pin 2472.

그런 다음, 도 5c에 도시된 바와 같이 핸들링 블레이드(310)를 하강하여 제 2 비처리 기판(W12)을 제 2 리프트핀(2472)에 안착시킨다.Then, as illustrated in FIG. 5C, the handling blade 310 is lowered to seat the second unprocessed substrate W12 on the second lift pin 2472.

이렇게 제 1차 비처리 기판(W11,W12) 한 쌍이 모두 제 1 및 제 2 리프트핀(2471,2472)에 안착시킨 다음, 도 5d에 도시된 바와 같이 핸들링 블레이드(310)를 프로세스 챔버(210) 외부로 인출시킨다.Thus, the pair of the first unprocessed substrates W11 and W12 both rest on the first and second lift pins 2471 and 2472, and then the handling blade 310 is transferred to the process chamber 210 as shown in FIG. 5D. Withdraw to the outside.

그리고, 도 5e에 도시된 바와 같이 제 1 및 제 2 리프트핀(2471,2472)을 하강시켜 제 1 및 제 2 비처리 기판(W11,W12)을 각각의 회동암(253)에 형성된 안착홈(253c)에 안착시킨다.As shown in FIG. 5E, the first and second lift pins 2471 and 2472 are lowered to form the first and second non-processed substrates W11 and W12 formed in the pivotal arms 253. 253c).

이렇게 제 1 및 제 2 비처리 기판(W11,W12)이 각각의 회동암(253)에 안정적으로 안착되었다면, 도 5f에 도시된 바와 같이 제 1 및 제 2 리프트핀(2471,2472)을 계속 하강시켜 회동암(253)이 회동되는 높이보다 낮은 높이까지 하강시킨다. 바람직하게는 제 1 및 제 2 리프트핀(2471,2472)을 계속 하강시켜 각각의 안착 플레이트(241)에 안착되도록 한다.When the first and second non-processing substrates W11 and W12 are stably seated on the respective pivot arms 253, the first and second lift pins 2247 and 2472 are continuously lowered as shown in FIG. 5F. It lowers to a height lower than the rotational rock 253 is rotated. Preferably, the first and second lift pins 2471 and 2472 are continuously lowered to be seated on the respective seating plates 241.

그리고, 도 5g에 도시된 바와 같이 이송유닛(250), 즉 회동암(253)을 동일한 높이에서 회동시켜 한 쌍의 제 1차 비처리 기판(W11,W12)을 각각의 제 2 반응공 간(S12,S22)에 위치시킨다.As shown in FIG. 5G, the transfer unit 250, that is, the pivoting arm 253 is rotated at the same height so that the pair of first unprocessed substrates W11 and W12 may be formed in each second reaction space ( S12, S22).

그런 다음, 도 5h에 도시된 바와 같이 인접된 프로세스 챔버(210)의 제 2 반응공간(S12,S22)에 각각 마련되는 제 3 및 제 4 리프트핀(2473,2474)을 상승시켜 제 1차 비처리 기판(W11,W12)을 제 3 및 제 4 리프트핀(2473,2474)에 각각 안착시킨다.Then, as shown in FIG. 5H, the third and fourth lift pins 2473 and 2474 provided in the second reaction spaces S12 and S22 of the adjacent process chamber 210 are raised to raise the first ratio. The processing substrates W11 and W12 are seated on the third and fourth lift pins 2473 and 2474, respectively.

이렇게 제 1차 비처리 기판(W11,W12)이 제 3 및 제 4 리프트핀(2473,2474)에 각각 안착되었다면, 도 5i에 도시된 바와 같이 회동암(253)을 회동시켜 회동암(253)이 제 1 반응공간(S11,S21)과 제 2 반응공간(S12,S22) 사이에 위치되도록 한다. 이때 회동암(253)은 각각의 제 2 반응공간(S12,S22)에 입설된 제 3 및 제 4 리프트핀(2473,2474)에 간섭받지 않도록 안착부(253b)의 형상에 의해 제 3 및 제 4 리프트핀(2473,2474)을 회피하면서 회동된다.When the first unprocessed substrates W11 and W12 are seated on the third and fourth lift pins 2473 and 2474, respectively, the pivot arm 253 is rotated by rotating the pivot arm 253 as shown in FIG. 5I. The first reaction space (S11, S21) and the second reaction space (S12, S22) to be located between. At this time, the pivot arm 253 is formed by the shape of the seating portion 253b so as not to interfere with the third and fourth lift pins 2473 and 2474 installed in the respective second reaction spaces S12 and S22. It is rotated while avoiding the four lift pins 2473 and 2474.

그런 다음, 도 5j에 도시된 바와 같이 제 1 및 제 2 리프트핀(2471,2472)을 상승시킨다. 이때 제 1 및 제 2 리프트핀(2471,2472)의 상승 높이는 도 5a에 도시된 바와 같이 서로 대기되는 높이가 다르도록 각각의 제 1 및 제 2 리프트핀(2471,2472)을 상승시킨다.Then, as shown in FIG. 5J, the first and second lift pins 2471 and 2472 are raised. At this time, the rising height of the first and second lift pins 2247 and 2472 raises the first and second lift pins 2247 and 2472 so that the heights of the first and second lift pins 2247 and 2472 are different from each other.

그리고, 도 5k에 도시된 바와 같이 제 1 반응공간(S11,S21)에서는 제 2차 비처리 기판(W21,W22)을 인입시켜 도 5a 및 도 5d의 과정이 순차적으로 이루어져서 제 1 및 제 2 리프트핀(2471,2472)에 제 2차 비처리 기판(W21,W22)이 안착된다.In addition, as shown in FIG. 5K, in the first reaction spaces S11 and S21, the second unprocessed substrates W21 and W22 are introduced to sequentially process the processes of FIGS. 5A and 5D so that the first and second lifts are sequentially performed. Second unprocessed substrates W21 and W22 are seated on the pins 2471 and 2472.

이렇게 한 쌍의 프로세스 챔버(210)에 형성된 각각의 제 1 반응공간(S11,S21) 및 제 2 반응공간(S12,S22)에 한 쌍의 제 1차 비처리 기판(W11,W12) 및 제 2 차 비처리 기판(W)이 배치되었다면, 각각의 반응공간(S11,S12,S21,S22)에 마련된 안착 플레이트(241)를 상승시켜 비처리 기판(W11,W12,W21,W22)을 안착 플레이트(241) 상면에 안착시키는 동시에, 계속적인 상승을 하여 비처리 기판(W11,W12,W21,W22)이 반응위치까지 상승되도록 한다.Thus, a pair of first unprocessed substrates W11 and W12 and a second in each of the first reaction spaces S11 and S21 and the second reaction spaces S12 and S22 formed in the pair of process chambers 210. If the difference unprocessed substrate W is disposed, the mounting plates 241 provided in the respective reaction spaces S11, S12, S21, and S22 are raised to mount the untreated substrates W11, W12, W21, and W22. 241) while being seated on the upper surface, the continuous processing is performed so that the untreated substrates W11, W12, W21, W22 are raised to the reaction position.

그런 다음, 각각의 가스 분사부(221)에서 반응가스를 비처리 기판(W11,W12,W21,W22)에 분사하면서 가스 분사부(221)와 안착 플레이트(241) 사이에 플라즈마를 형성함에 따라 각각의 반응공간에서 소정의 처리공정을 동시에 진행한다. 이렇게 비처리 기판(W11,W12,W21,W22)의 처리가 동시에 완료되면, 완료된 기판(W)은 전술된 비처리 기판(W)의 로딩과정을 역순으로 진행하면서 프로세스 챔버(210)에서 언로딩시킨다. 그리고, 언로딩된 처리 기판(W)은 로드락 챔버(400)로 회수되고, 로드락 챔버(400)의 내부를 대기압 상태로 변경하고, 로드락 챔버(400)에 회수된 처리 기판(W)을 저장 랙(500)에 저장한다.Then, as each gas injector 221 forms a plasma between the gas injector 221 and the seating plate 241 while injecting the reaction gas onto the untreated substrates W11, W12, W21, and W22, respectively. The predetermined treatment process is carried out simultaneously in the reaction space of. When the processing of the unprocessed substrates W11, W12, W21, and W22 is completed at the same time, the completed substrate W is unloaded from the process chamber 210 while the above-described loading process of the unprocessed substrate W is performed in reverse order. Let's do it. The unloaded processing substrate W is recovered to the load lock chamber 400, the inside of the load lock chamber 400 is changed to an atmospheric pressure state, and the processing substrate W recovered to the load lock chamber 400. To store in the storage rack 500.

이상 실시예를 참조하여 설명하였지만, 해당 기술 분야의 숙련된 당업자는 하기의 특허청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다. Although described with reference to the embodiments, it will be understood by those skilled in the art that the present invention may be modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. .

도 1은 본 발명에 따른 기판 처리 시스템을 개략적으로 보여주는 구성도이고,1 is a schematic view showing a substrate processing system according to the present invention,

도 2는 본 발명에 따른 화학기상증착 장치를 개략적으로 보여주는 단면 개념도이고,Figure 2 is a schematic cross-sectional view showing a chemical vapor deposition apparatus according to the present invention,

도 3은 본 발명에 따른 화학기상증착 장치의 요부를 개략적으로 보여주는 평면도이고, Figure 3 is a plan view schematically showing the main part of the chemical vapor deposition apparatus according to the present invention,

도 4는 본 발명에 따른 회동암을 보여주는 사시도이며,4 is a perspective view showing the rotational arm according to the present invention,

도 5a 내지 도 5k는 본 발명에 따른 기판 처리 시스템의 작동 상태를 보여주는 단면 개념도이다.5A to 5K are cross-sectional conceptual views showing an operating state of a substrate processing system according to the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

100: 이송챔버 200: 프로세스 챔버 모듈100: transfer chamber 200: process chamber module

210: 프로세스 챔버 220: 가스공급유닛210: process chamber 220: gas supply unit

221: 가스 분사부 240: 기판안착유닛221: gas injection unit 240: substrate seating unit

241: 안착 플레이트 250: 이송유닛241: mounting plate 250: transfer unit

251: 스핀들 253: 회동암251: spindle 253: slewing rock

Claims (7)

기판을 처리하는 장치에 있어서,In the apparatus for processing a substrate, 내부에 기판의 처리가 이루어지는 반응공간이 서로 연통되어 적어도 두 개 이상 형성되는 프로세스 챔버와;A process chamber in which at least two reaction chambers in which reaction processes in which substrates are processed are communicated with each other are formed; 상기 각각의 반응공간 상측에 배치되는 적어도 두 개 이상의 가스공급유닛과;At least two gas supply units disposed above each reaction space; 상기 각각의 반응공간 하측에 배치되고 상기 각각의 가스공급유닛에 근접되도록 승강되는 적어도 두 개 이상의 기판안착유닛과;At least two substrate seating units disposed below the respective reaction spaces and lifted to approach each of the gas supply units; 상승된 상기 기판안착유닛의 가장자리에서 일정한 간격만큼 이격된 상태로 상기 반응공간들의 상측을 둘러싸서 구획하고, 상기 기판안착유닛과의 이격공간으로 반응가스가 배기되도록 하는 하우징과;A housing surrounding the upper sides of the reaction spaces in a state spaced apart by a predetermined distance from the edge of the raised substrate seating unit, and allowing the reaction gas to be exhausted into a space separated from the substrate seating unit; 상기 반응공간 중 어느 하나에 인입된 기판을 인접된 반응공간으로 이송시키는 이송유닛을 포함하는 화학기상증착 장치.Chemical vapor deposition apparatus comprising a transfer unit for transferring the substrate introduced into any one of the reaction space to the adjacent reaction space. 청구항 1에 있어서,The method according to claim 1, 상기 가스공급유닛은 The gas supply unit 상기 각각의 반응공간 상부에 배치되어 반응가스를 반응공간에 분사하는 적어도 두 개 이상의 가스 분사부와;At least two gas injectors disposed above the respective reaction spaces to inject the reaction gas into the reaction spaces; 상기 프로세스 챔버의 외부에 구비되어 상기 각각의 가스 분사부에 반응가스를 공급하는 반응가스 공급부와;A reaction gas supply unit provided outside the process chamber to supply a reaction gas to each of the gas injection units; 상기 반응가스 공급부에 연결되어 상기 각각의 가스 분사부로 반응가스가 유동되도록 분기되는 반응가스 공급라인을 포함하는 화학기상증착 장치.And a reaction gas supply line connected to the reaction gas supply part and branched to flow the reaction gas into the respective gas injection parts. 청구항 2에 있어서, 상기 가스공급유닛은,The gas supply unit of claim 2, 상기 프로세스 챔버의 외부에 구비되어 상기 각각의 가스 분사부에 세정가스를 공급하는 세정가스 공급부와;A cleaning gas supply unit provided outside the process chamber to supply a cleaning gas to each of the gas injection units; 상기 세정가스 공급부에 연결되어 상기 각각의 가스 분사부 및 상기 각각의 반응공간 측부로 반응가스가 유동되도록 분기되는 세정가스 공급라인을 포함하는 화학기상증착 장치.And a cleaning gas supply line connected to the cleaning gas supply part and branched to flow the reaction gas to the respective gas injection parts and the respective reaction space sides. 청구항 1에 있어서, 상기 이송유닛은,The method according to claim 1, wherein the transfer unit, 상기 프로세스 챔버의 반응공간들 사이에 구비되는 스핀들과;A spindle provided between the reaction spaces of the process chamber; 상기 스핀들에 연결되어 상기 반응공간들 사이에서 회동되는 회동암과;A rotational arm connected to the spindle and pivoted between the reaction spaces; 상기 스핀들을 회동시키는 회동 구동부를 포함하는 화학기상증착 장치.Chemical vapor deposition apparatus comprising a rotation drive for rotating the spindle. 청구항 4에 있어서,The method according to claim 4, 상기 회동암은 일측에 상기 스핀들의 측방으로 연결되는 연결부와, 타측에 기판이 안착되는 안착부가 형성되는 것을 특징으로 하는 화학기상증착 장치.The pivotal arm is a chemical vapor deposition apparatus characterized in that the connection portion is connected to the side of the spindle side on one side, and a seating portion for mounting the substrate on the other side. 청구항 5에 있어서,The method according to claim 5, 상기 안착부는 상기 이송유닛에 구비되는 리프트핀의 설치 위치에 간섭되지 않도록 적어도 두 개 이상의 갈래로 분기되어 절곡되는 것을 특징으로 하는 화학기상증착 장치. The seating unit is chemical vapor deposition apparatus characterized in that the branched at least two or more bent so as not to interfere with the installation position of the lift pin provided in the transfer unit. 이송 챔버와;A transfer chamber; 내부에 기판의 처리가 이루어지는 반응공간이 서로 연통되어 적어도 두 개 이상 형성되고, 상기 각각의 반응공간 상측에는 적어도 두 개 이상의 가스공급유닛이 배치되며, 상기 각각의 반응공간 하측에는 상기 각각의 가스공급유닛에 근접되도록 승강되는 적어도 두 개 이상의 기판안착유닛이 구비되고, 상승된 상기 기판안착유닛의 가장자리에서 일정한 간격만큼 이격된 상태로 상기 반응공간들의 상측을 둘러싸서 구획하고, 상기 기판안착유닛과의 이격공간으로 반응가스가 배기되도록 하우징이 구비되며, 상기 반응공간들 사이에서 기판을 각각의 반응공간으로 이송시키는 이송유닛이 구비되어 상기 이송 챔버에 연결되는 적어도 두 개 이상의 프로세 스 챔버 모듈과;At least two reaction spaces in which a substrate is processed are communicated with each other, and at least two gas supply units are disposed above each reaction space, and each gas supply is provided below each reaction space. At least two substrate seating units are provided, which are elevated to approach the unit, and are partitioned by surrounding the upper sides of the reaction spaces at a predetermined interval from the edge of the substrate seating unit. At least two process chamber modules provided with a housing to exhaust the reaction gas into the separation space and having a transfer unit for transferring the substrate to each reaction space between the reaction spaces and connected to the transfer chamber; 상기 이송 챔버 내에 구비되고, 다수의 기판을 동시에 이송하기 위한 다수의 기판 핸들링 블레이드가 구비되는 핸들링 로봇과;A handling robot provided in the transfer chamber and having a plurality of substrate handling blades for simultaneously transferring a plurality of substrates; 상기 이송 챔버에 연결되는 로드락 챔버를 포함하고,A load lock chamber connected to the transfer chamber; 상기 프로세스 챔버 모듈들은 핸들링 블레이드의 수와 대응되는 개수가 인접배치되어 상기 핸들링 로봇의 동작에 의해 상기 인접배치되는 프로세스 챔버 모듈들에 기판이 동시에 출입되는 것을 특징으로 하는 기판 처리 시스템.The process chamber modules are arranged in a number corresponding to the number of the handling blades adjacent to the substrate processing system, characterized in that the substrate simultaneously enters into and out of the process chamber modules arranged adjacently by the operation of the handling robot.
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