US20080135516A1 - Substrate treatment device - Google Patents
Substrate treatment device Download PDFInfo
- Publication number
- US20080135516A1 US20080135516A1 US11/979,816 US97981607A US2008135516A1 US 20080135516 A1 US20080135516 A1 US 20080135516A1 US 97981607 A US97981607 A US 97981607A US 2008135516 A1 US2008135516 A1 US 2008135516A1
- Authority
- US
- United States
- Prior art keywords
- gas
- gas supply
- treatment chamber
- substrate
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Definitions
- This invention relates to a substrate treatment device to be used for a semiconductor production apparatus.
- a reaction furnace (treatment furnace) of a vertical low pressure CVD device used for selective epitaxial growth of Si or SiGe is formed of a reaction piping, an inlet flange, a seal cap, and the like, wherein a boat is placed on the seal cap, a wafer is placed on the boat, and the reaction furnace is heated by a heater.
- a gas serving as a raw material for the Si or SiGe selective epitaxial growth is introduced from an upper part of the reaction furnace through a nozzle and discharged from a lower part. Accordingly, in a reaction atmosphere where the wafer is present, the gas flows from the top to the bottom.
- the heater heating the reaction furnace is divided into five regions of an upper heater, a central upper heater, a central heater, a central lower heater, and a lower heater, and a temperature gradient (temperature inclination) is set for the five divisional heaters in such a manner that the lower the region the higher is the temperature.
- a reduction in growth speed at the discharge side (the lower part of the reaction furnace), which is caused by consumption of the reaction gas, is corrected by the temperature gradient.
- a method of alternately supplying a raw material gas and an etching gas is employed.
- the method of alternately supplying a raw material gas and an etching gas since the raw material gas supply and the etching gas supply are performed under an identical temperature, only one of a growth speed and an etching speed is adjusted by the temperature gradient of the heaters. That is, in the case where the temperature gradient is so set as to adjust the growth speed, the etching speed is decided in accordance with the temperature gradient. In the case where the temperature gradient is so set as to adjust the etching speed, the growth speed is decided in accordance with the temperature gradient.
- the raw material gas and the etching gas are supplied from an identical nozzle, a film that is formed due to self-decomposition of the raw material gas deposits inside the nozzle, and particle generation and etching gas consumption are undesirably caused when the etching gas is fed through such nozzle.
- This invention has been accomplished for the purpose of solving the above-described problems, and an object thereof is to provide a substrate treatment device that enables adjustment of both of a growth speed and an etching speed and is capable of suppressing particle generation.
- this invention is characterized by a substrate treatment device at least using a Si-containing gas and a Cl 2 gas and alternately supplying the Si-containing gas and the Cl 2 gas to a treatment chamber for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising: a substrate support member for supporting the substrate in the treatment chamber; a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber; a gas supply system provided inside the treatment chamber; and a discharge port opened on the treatment chamber, wherein: the gas supply system comprises a first gas supply member for supplying the Si-containing gas and a second gas supply member for supplying the Cl 2 gas different from the first gas supply member; and each of the first gas supply member and the second gas supply member comprises a plurality of gas supply nozzles for separately supplying the Si-containing gas and the Cl 2 gas to a plurality of different parts of the treatment chamber.
- FIG. 1 is a schematic diagram showing a structure of a substrate treatment device according to one embodiment of this invention.
- FIG. 2 is a longitudinal sectional view showing a structure of a treatment furnace of the substrate treatment device according to the embodiment of this invention.
- FIG. 3 is diagram showing a flow of specific steps for a selective epitaxial growth of a Si film using the substrate treatment device according to the embodiment of this invention.
- FIG. 1 Shown in FIG. 1 is a schematic diagram of a substrate treatment device 10 according to one embodiment of this invention.
- the substrate treatment device 10 is a so-called hot wall type vertical low pressure CVD device.
- wafers (Si substrates) a conveyed by a wafer cassette 12 are transferred onto a boat 16 from the wafer cassette 12 by a transfer machine 14 .
- the boat 16 is inserted into a treatment furnace 18 , and then the treatment furnace 18 is reduced in pressure by an evacuation system 20 .
- a temperature inside the treatment furnace 18 is increased to a desired temperature by a heater 22 , and, when the temperature becomes stable, a raw material gas and an etching gas are alternately supplied from a gas supply system 21 to cause selective epitaxial growth of Si, SiGe, or the like on the wafers a.
- Denoted by 23 is a control system for controlling insertion of the boat 16 into the treatment furnace 18 , rotation of the boat 16 , evacuation by the evacuation system 20 , gas supply from the gas supply system 21 , heating by the heater 22 , and the like.
- a Si-containing gas such as SiH 4 , Si 2 H 6 , and SiH 2 Cl 2 may be used.
- a Ge-containing gas such as GeH 4 and GeCl 4 may be added.
- the selective growth means the growth of Si or SiGe caused only on Si during the incubation period.
- Si nuclei adhere to SiO 2 or Si 3 N 4 to diminish the selectivity. Therefore, the etching gas is supplied after the raw material gas supply in order to eliminate the Si nuclei adhered to SiO 2 or Si 3 N 4 .
- the selective epitaxial growth is performed by alternating the gas supplies.
- FIG. 2 is a schematic block diagram which is a longitudinal sectional view showing the treatment furnace 18 after the insertion of the boat 16 according to one embodiment of this invention.
- the treatment furnace 18 is provided with a reaction piping 26 that forms a treatment chamber 24 and formed of an outer tube, for example, a gas discharge piping 28 disposed under the reaction piping 26 for discharging gases from a discharge port 27 , a first gas supply piping 30 for supplying the raw material gas and the like to the treatment chamber 24 , a second gas supply piping 32 for supplying the etching gas and the like, a manifold 34 connected to the reaction piping 26 via an O-ring 33 a , a sealing cap 36 for closing a lower end of the manifold 34 to seal the treatment chamber 24 via O-rings 33 b and 33 c , the boat 16 serving as a wafer retaining body (substrate support member) for retaining (supporting) the wafers (Si substrates) a in a multistage state, a rotation mechanism 38 for rotating the boat 16 at a predetermined number of rotations, and the heater (heating member) 22 formed of a heater wire (not shown
- the reaction piping 26 is formed from a heat insulating material such as quartz (SiO 2 ) and silicon carbide (SiC) and has a cylindrical shape wherein an upper end is closed and a lower end is opened.
- the manifold 34 is made from a stainless steel or the like, for example, and has a cylindrical shape wherein an upper end and a lower end are opened. The upper end of the manifold 34 is coupled to the reaction piping 26 via the O-ring 33 a , and the first gas supply piping 30 and the second gas supply piping 32 are attached as penetrating through the manifold 34 .
- the sealing cap 36 is made from a stainless steel or the like, for example, and formed of a ring-like part 35 and a circular part 37 to close the lower end of the manifold 34 via the O-rings 33 b and 33 c .
- the boat 16 is made from a heat insulating material such as quartz and silicon carbide and has a structure of retaining the plural wafers a in such a state that the wafers a keep a horizontal posture and drawn up with centerlines being aligned.
- the rotation mechanism 38 of the boat 16 is connected to the boat 16 by a rotation shaft 39 penetrating through the sealing cap 36 , so that the wafers a are rotated when the boat 16 is rotated.
- the heater 22 is divided into 5 regions of an upper heater 22 A, a central upper heater 22 B, a central heater 22 C, a central lower heater 22 D, and a lower heater 22 E, and each of the heater regions has a cylindrical shape.
- the treatment gas is supplied from a raw material gas supply source 46 for supplying the raw material gas (e.g. SiH 4 gas), a purge gas supply source 48 for supplying a purge gas (e.g. H 2 gas), an etching gas supply source 50 for supplying the etching gas (e.g. Cl 2 gas), for example.
- a raw material gas supply source 46 for supplying the raw material gas (e.g. SiH 4 gas)
- a purge gas supply source 48 for supplying a purge gas (e.g. H 2 gas)
- an etching gas supply source 50 for supplying the etching gas (e.g. Cl 2 gas), for example.
- the raw material gas and the purge gas are introduced into the treatment chamber 24 separately through the first gas supply piping 30 and the second gas supply piping 32 after flow rates of the gases are independently adjusted by a first MFC (mass-flow controller) 52 serving as a unit for controlling the flow rate of the raw material gas from the raw material gas supply source 46 and a second MFC 54 serving as a unit for controlling the flow rate of the purge gas from the purge gas supply source 48 .
- a first MFC mass-flow controller
- the raw material gas is supplied to three parts of an upper part, a center part, and a lower part of the boat 16 by the first gas supply nozzles 42 a , 42 b , and 42 c branched from the first gas supply piping 30 , while the purge gas is supplied to the three parts of the upper part, the center part, and the lower part of the boat 16 by the second gas supply nozzles 44 a , 44 b , and 44 c branched from the second gas supply piping 32 .
- the purge gas and the etching gas are introduced into the treatment chamber 24 separately through the first gas supply piping 30 and the second gas supply piping 32 after flow rates of the gases are independently adjusted by a third MFC 56 serving as a unit for controlling the flow rate of the purge gas from the purge gas supply source 48 and a fourth MPC 58 serving as a unit for controlling the flow rate of the etching gas from the etching gas supply source 50 .
- the purge gas is supplied to the three parts of the upper part, the center part, and the lower part of the boat 16 by the first gas supply nozzles 42 a , 42 b , and 42 c branched from the first gas supply piping 30 , while the etching gas is supplied to the three parts of the upper part, the center part, and the lower part of the boat 16 by the second gas supply nozzles 44 a , 44 b , and 44 c branched from the second gas supply piping 32 .
- the atmosphere inside the treatment chamber 24 is evacuated by an evacuation unit (e.g. vacuum pump 59 ) connected to the gas discharge piping 28 from the treatment chamber 24 .
- an evacuation unit e.g. vacuum pump 59
- the boat 16 retaining the untreated wafers a is inserted into the treatment chamber 24 by driving of an elevation motor (not shown).
- An evacuation valve 62 is opened by a command from the control device 60 to evacuate the atmosphere in the treatment chamber 24 , thereby reducing a pressure of the treatment chamber 24 .
- the heater 22 is controlled by the control device 60 so as to maintain a temperature of the treatment chamber 24 , i.e. a temperature of the wafers a, to a desired temperature.
- the rotation mechanism 38 is driven by a command from the control device 60 so that the boat 16 is rotated at the predetermined number of rotations.
- a first valve 64 opening/closing for supplying the raw material gas from the raw material gas supply source 46 and a second valve 66 for supplying the purge gas from the purge gas supply source 48 are opened.
- a third valve 68 is opened to introduce the raw material gas into the treatment chamber 24 through the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c to treat the wafers a.
- a sixth valve 74 is opened to introduce the purge gas into the treatment chamber 24 through the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c.
- a fourth valve 70 opening/closing for supplying the etching gas from the etching gas supply source 50 and a fifth valve 72 for supplying the purge gas from the purge gas supply source 48 are opened.
- the sixth valve 74 is opened to introduce the etching gas into the treatment chamber 24 through the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c to treat the wafers a.
- the third valve 68 is opened to introduce the purge gas into the treatment chamber 24 through the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c.
- the raw material gas is supplied to the treatment chamber 24 through the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c separately from the etching gas supplied to the treatment chamber 24 through the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c .
- the substrate treatment device 10 since the substrate treatment device 10 according to one embodiment of this invention is capable of supplying the raw material gas and the etching gas separately from each other through the plural nozzles that are provided independently for each of the raw material gas and the etching gas, it is possible to adjust both of the growth speed and the etching speed by adjusting the supply rates of the raw material gas and the etching gas.
- the substrate treatment device 10 since the raw material gas is supplied from the plural nozzles that are different from the plural nozzles used for supplying the etching gas, it is possible to avoid the particle generation from the nozzles.
- the etching gas is not consumed in the second gas supply nozzles 44 a , 44 b , and 44 c , thereby making it possible to achieve good etching characteristics as well as to ensure a stable etching rate for the wafers a irrespective of the inner wall state of the first gas supply nozzles 42 a , 42 b , and 42 c and the second gas supply nozzles 44 a , 44 b , and 44 c.
- the substrate treatment device 10 is capable of adjusting a reduction in growth speed, which is aggravated as a distance between the discharge side (the lower part inside the treatment furnace 18 ) and the wafer is reduced due to consumption of the reaction gas, by supplying the gas between the upper part and the lower part of the treatment furnace 18 , thereby making it possible to set a growth speed at a temperature close to the treatment temperature upper limit as the standard as well as to realize a growth speed larger than that achieved by setting the temperature gradient.
- the purge gas such as a hydrogen gas is fed during the film formation (raw material gas supply) through the second gas supply nozzles 44 a , 44 b , and 44 c that are used for the etching gas as described above, it is possible to prevent entrance of the gas and film deposition on the inner walls in the second gas supply nozzles 44 a , 44 b , and 44 c .
- the purge gas is fed during the etching (etching gas supply) through the first gas supply nozzles 42 a , 42 b , and 42 c that are used for the raw material gas, it is possible to prevent entrance of the etching gas in the first gas supply nozzles 42 a , 42 b , and 42 c.
- a monosilane (SiH 4 ) gas which is the raw material gas is supplied to the treatment chamber 24 through the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c (film formation step).
- a hydrogen (H 2 ) gas which is the purge gas is supplied to the treatment chamber 24 through the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c.
- the H 2 gas which is the purge gas is supplied to the treatment chamber 24 through both of the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c and the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c (purge step).
- a chlorine (Cl 2 ) gas which is the etching gas is supplied to the treatment chamber 24 through the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c (etching step).
- the H 2 gas which is the purge gas is supplied to the treatment chamber 24 through the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c.
- the H 2 gas which is the purge gas is supplied to the treatment chamber 24 through both of the first gas supply piping 30 and the first gas supply nozzles 42 a , 42 b , and 42 c and the second gas supply piping 32 and the second gas supply nozzles 44 a , 44 b , and 44 c (purge step).
- the substrate treatment device capable of adjusting both of the growth speed and the etching speed in the Si or SiGe selective epitaxial growth, avoiding the particle generation from nozzles, and achieving good etching characteristics.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
Description
- 1. Field of the Invention
- This invention relates to a substrate treatment device to be used for a semiconductor production apparatus.
- 2. Description of the Related Art
- A reaction furnace (treatment furnace) of a vertical low pressure CVD device used for selective epitaxial growth of Si or SiGe is formed of a reaction piping, an inlet flange, a seal cap, and the like, wherein a boat is placed on the seal cap, a wafer is placed on the boat, and the reaction furnace is heated by a heater.
- In the above-mentioned structure, a gas serving as a raw material for the Si or SiGe selective epitaxial growth is introduced from an upper part of the reaction furnace through a nozzle and discharged from a lower part. Accordingly, in a reaction atmosphere where the wafer is present, the gas flows from the top to the bottom.
- In this case, the heater heating the reaction furnace is divided into five regions of an upper heater, a central upper heater, a central heater, a central lower heater, and a lower heater, and a temperature gradient (temperature inclination) is set for the five divisional heaters in such a manner that the lower the region the higher is the temperature. A reduction in growth speed at the discharge side (the lower part of the reaction furnace), which is caused by consumption of the reaction gas, is corrected by the temperature gradient.
- In the Si or SiGe selective epitaxial growth, a method of alternately supplying a raw material gas and an etching gas is employed. In the case of the method of alternately supplying a raw material gas and an etching gas, since the raw material gas supply and the etching gas supply are performed under an identical temperature, only one of a growth speed and an etching speed is adjusted by the temperature gradient of the heaters. That is, in the case where the temperature gradient is so set as to adjust the growth speed, the etching speed is decided in accordance with the temperature gradient. In the case where the temperature gradient is so set as to adjust the etching speed, the growth speed is decided in accordance with the temperature gradient.
- Also, when the raw material gas and the etching gas are supplied from an identical nozzle, a film that is formed due to self-decomposition of the raw material gas deposits inside the nozzle, and particle generation and etching gas consumption are undesirably caused when the etching gas is fed through such nozzle.
- This invention has been accomplished for the purpose of solving the above-described problems, and an object thereof is to provide a substrate treatment device that enables adjustment of both of a growth speed and an etching speed and is capable of suppressing particle generation.
- In order to solve the above-described problems, this invention is characterized by a substrate treatment device at least using a Si-containing gas and a Cl2 gas and alternately supplying the Si-containing gas and the Cl2 gas to a treatment chamber for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising: a substrate support member for supporting the substrate in the treatment chamber; a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber; a gas supply system provided inside the treatment chamber; and a discharge port opened on the treatment chamber, wherein: the gas supply system comprises a first gas supply member for supplying the Si-containing gas and a second gas supply member for supplying the Cl2 gas different from the first gas supply member; and each of the first gas supply member and the second gas supply member comprises a plurality of gas supply nozzles for separately supplying the Si-containing gas and the Cl2 gas to a plurality of different parts of the treatment chamber.
- According to this invention, since it is possible to adjust both of a growth speed and an etching speed, it is possible to avoid particle generation and to achieve good etching characteristics.
-
FIG. 1 is a schematic diagram showing a structure of a substrate treatment device according to one embodiment of this invention. -
FIG. 2 is a longitudinal sectional view showing a structure of a treatment furnace of the substrate treatment device according to the embodiment of this invention. -
FIG. 3 is diagram showing a flow of specific steps for a selective epitaxial growth of a Si film using the substrate treatment device according to the embodiment of this invention. - One embodiment of this invention will be described below based on the drawings.
- Shown in
FIG. 1 is a schematic diagram of asubstrate treatment device 10 according to one embodiment of this invention. Thesubstrate treatment device 10 is a so-called hot wall type vertical low pressure CVD device. - As shown in
FIG. 1 , wafers (Si substrates) a conveyed by awafer cassette 12 are transferred onto aboat 16 from thewafer cassette 12 by atransfer machine 14. When transfer of all of the wafers a is finished, theboat 16 is inserted into atreatment furnace 18, and then thetreatment furnace 18 is reduced in pressure by anevacuation system 20. Subsequently, a temperature inside thetreatment furnace 18 is increased to a desired temperature by aheater 22, and, when the temperature becomes stable, a raw material gas and an etching gas are alternately supplied from agas supply system 21 to cause selective epitaxial growth of Si, SiGe, or the like on the wafers a. Denoted by 23 is a control system for controlling insertion of theboat 16 into thetreatment furnace 18, rotation of theboat 16, evacuation by theevacuation system 20, gas supply from thegas supply system 21, heating by theheater 22, and the like. - As the raw material gas for the Si or SiGe selective epitaxial growth, a Si-containing gas such as SiH4, Si2H6, and SiH2Cl2 may be used. In the case of the SiGe selective epitaxial growth, a Ge-containing gas such as GeH4 and GeCl4 may be added. In the CVD reaction, the growth starts on Si immediately after the introduction of the raw material gas, but a delay in growth called an incubation period occurs on SiO2 or Si3N4. The selective growth means the growth of Si or SiGe caused only on Si during the incubation period. During the selective growth, Si nuclei adhere to SiO2 or Si3N4 to diminish the selectivity. Therefore, the etching gas is supplied after the raw material gas supply in order to eliminate the Si nuclei adhered to SiO2 or Si3N4. The selective epitaxial growth is performed by alternating the gas supplies.
- Hereinafter, details of a structure after the insertion of the
boat 16 of thetreatment furnace 18 to be used for thesubstrate treatment device 10 according to one embodiment of this invention will be described based on the drawings. -
FIG. 2 is a schematic block diagram which is a longitudinal sectional view showing thetreatment furnace 18 after the insertion of theboat 16 according to one embodiment of this invention. - As shown in
FIG. 2 , thetreatment furnace 18 is provided with areaction piping 26 that forms atreatment chamber 24 and formed of an outer tube, for example, agas discharge piping 28 disposed under thereaction piping 26 for discharging gases from adischarge port 27, a firstgas supply piping 30 for supplying the raw material gas and the like to thetreatment chamber 24, a secondgas supply piping 32 for supplying the etching gas and the like, amanifold 34 connected to thereaction piping 26 via an O-ring 33 a, a sealingcap 36 for closing a lower end of themanifold 34 to seal thetreatment chamber 24 via O-rings 33 b and 33 c, theboat 16 serving as a wafer retaining body (substrate support member) for retaining (supporting) the wafers (Si substrates) a in a multistage state, a rotation mechanism 38 for rotating theboat 16 at a predetermined number of rotations, and the heater (heating member) 22 formed of a heater wire (not shown) and a heat insulating member for heating the wafers a outside thereaction piping 26. - The
reaction piping 26 is formed from a heat insulating material such as quartz (SiO2) and silicon carbide (SiC) and has a cylindrical shape wherein an upper end is closed and a lower end is opened. Themanifold 34 is made from a stainless steel or the like, for example, and has a cylindrical shape wherein an upper end and a lower end are opened. The upper end of themanifold 34 is coupled to thereaction piping 26 via the O-ring 33 a, and the firstgas supply piping 30 and the secondgas supply piping 32 are attached as penetrating through themanifold 34. Thesealing cap 36 is made from a stainless steel or the like, for example, and formed of a ring-like part 35 and acircular part 37 to close the lower end of themanifold 34 via the O-rings 33 b and 33 c. Theboat 16 is made from a heat insulating material such as quartz and silicon carbide and has a structure of retaining the plural wafers a in such a state that the wafers a keep a horizontal posture and drawn up with centerlines being aligned. The rotation mechanism 38 of theboat 16 is connected to theboat 16 by arotation shaft 39 penetrating through the sealingcap 36, so that the wafers a are rotated when theboat 16 is rotated. - The
heater 22 is divided into 5 regions of an upper heater 22A, a central upper heater 22B, a central heater 22C, a central lower heater 22D, and a lower heater 22E, and each of the heater regions has a cylindrical shape. - In the
treatment furnace 18 according to one embodiment of this invention, three firstgas supply nozzles gas supply piping 30 and having firstgas supply apertures gas supply nozzles gas supply piping 32, having secondgas supply apertures gas supply nozzles - In the above-described structure of the
treatment furnace 18, the treatment gas is supplied from a raw materialgas supply source 46 for supplying the raw material gas (e.g. SiH4 gas), a purgegas supply source 48 for supplying a purge gas (e.g. H2 gas), an etchinggas supply source 50 for supplying the etching gas (e.g. Cl2 gas), for example. In a film formation step, the raw material gas and the purge gas are introduced into thetreatment chamber 24 separately through the firstgas supply piping 30 and the secondgas supply piping 32 after flow rates of the gases are independently adjusted by a first MFC (mass-flow controller) 52 serving as a unit for controlling the flow rate of the raw material gas from the raw materialgas supply source 46 and asecond MFC 54 serving as a unit for controlling the flow rate of the purge gas from the purgegas supply source 48. The raw material gas is supplied to three parts of an upper part, a center part, and a lower part of theboat 16 by the firstgas supply nozzles gas supply piping 30, while the purge gas is supplied to the three parts of the upper part, the center part, and the lower part of theboat 16 by the secondgas supply nozzles gas supply piping 32. - During an etching step, the purge gas and the etching gas are introduced into the
treatment chamber 24 separately through the firstgas supply piping 30 and the secondgas supply piping 32 after flow rates of the gases are independently adjusted by athird MFC 56 serving as a unit for controlling the flow rate of the purge gas from the purgegas supply source 48 and afourth MPC 58 serving as a unit for controlling the flow rate of the etching gas from the etchinggas supply source 50. The purge gas is supplied to the three parts of the upper part, the center part, and the lower part of theboat 16 by the firstgas supply nozzles gas supply piping 30, while the etching gas is supplied to the three parts of the upper part, the center part, and the lower part of theboat 16 by the secondgas supply nozzles gas supply piping 32. - The atmosphere inside the
treatment chamber 24 is evacuated by an evacuation unit (e.g. vacuum pump 59) connected to thegas discharge piping 28 from thetreatment chamber 24. - Hereinafter, one example of wafer treatment by the
substrate treatment device 10 according to one embodiment of this invention will be described. - As shown in
FIG. 2 , theboat 16 retaining the untreated wafers a is inserted into thetreatment chamber 24 by driving of an elevation motor (not shown). Anevacuation valve 62 is opened by a command from thecontrol device 60 to evacuate the atmosphere in thetreatment chamber 24, thereby reducing a pressure of thetreatment chamber 24. Theheater 22 is controlled by thecontrol device 60 so as to maintain a temperature of thetreatment chamber 24, i.e. a temperature of the wafers a, to a desired temperature. The rotation mechanism 38 is driven by a command from thecontrol device 60 so that theboat 16 is rotated at the predetermined number of rotations. - Next after degrees of opening of the first MFC 52 and the second MFC 54 are adjusted by a command from the
control device 60, afirst valve 64 opening/closing for supplying the raw material gas from the raw materialgas supply source 46 and asecond valve 66 for supplying the purge gas from the purgegas supply source 48 are opened. Subsequently, athird valve 68 is opened to introduce the raw material gas into thetreatment chamber 24 through the firstgas supply piping 30 and the firstgas supply nozzles sixth valve 74 is opened to introduce the purge gas into thetreatment chamber 24 through the secondgas supply piping 32 and the secondgas supply nozzles - Next, after degrees of opening of the third MFC 56 and the fourth MFC 58 are adjusted by a command from the
control device 60, afourth valve 70 opening/closing for supplying the etching gas from the etchinggas supply source 50 and afifth valve 72 for supplying the purge gas from the purgegas supply source 48 are opened. Subsequently, thesixth valve 74 is opened to introduce the etching gas into thetreatment chamber 24 through the secondgas supply piping 32 and the secondgas supply nozzles third valve 68 is opened to introduce the purge gas into thetreatment chamber 24 through the firstgas supply piping 30 and the firstgas supply nozzles - As described above, in the
substrate treatment device 10 according to one embodiment of this invention, the raw material gas is supplied to thetreatment chamber 24 through the firstgas supply piping 30 and the firstgas supply nozzles treatment chamber 24 through the secondgas supply piping 32 and the secondgas supply nozzles substrate treatment device 10 according to one embodiment of this invention is capable of supplying the raw material gas and the etching gas separately from each other through the plural nozzles that are provided independently for each of the raw material gas and the etching gas, it is possible to adjust both of the growth speed and the etching speed by adjusting the supply rates of the raw material gas and the etching gas. - Also, in the case of supplying the raw material gas and the etching gas from an identical nozzle, a film deposits inside the nozzle due to self-decomposition of the raw material gas, and particle generation and etching gas consumption are caused when the etching gas is fed through the nozzle. In contrast, in the
substrate treatment device 10 according to one embodiment of this invention, since the raw material gas is supplied from the plural nozzles that are different from the plural nozzles used for supplying the etching gas, it is possible to avoid the particle generation from the nozzles. Further, since no film deposits on inner walls of the secondgas supply nozzles gas supply nozzles gas supply nozzles gas supply nozzles - Furthermore, since each of the gases is supplied from the plural nozzles that are different in height and provided independently for each of the gases in the
substrate treatment device 10 according to one embodiment of this invention, thesubstrate treatment device 10 is capable of adjusting a reduction in growth speed, which is aggravated as a distance between the discharge side (the lower part inside the treatment furnace 18) and the wafer is reduced due to consumption of the reaction gas, by supplying the gas between the upper part and the lower part of thetreatment furnace 18, thereby making it possible to set a growth speed at a temperature close to the treatment temperature upper limit as the standard as well as to realize a growth speed larger than that achieved by setting the temperature gradient. - Since the purge gas such as a hydrogen gas is fed during the film formation (raw material gas supply) through the second
gas supply nozzles gas supply nozzles gas supply nozzles gas supply nozzles - One example of specific flow of steps of the selective epitaxial growth of a Si film using the
substrate treatment device 10 according to one embodiment this invention will be described based onFIG. 3 . - (1) A monosilane (SiH4) gas which is the raw material gas is supplied to the
treatment chamber 24 through the firstgas supply piping 30 and the firstgas supply nozzles treatment chamber 24 through the secondgas supply piping 32 and the secondgas supply nozzles - (2) The gas supplies are stopped to evacuate the
treatment chamber 24. - (3) The H2 gas which is the purge gas is supplied to the
treatment chamber 24 through both of the firstgas supply piping 30 and the firstgas supply nozzles gas supply piping 32 and the secondgas supply nozzles - (4) A chlorine (Cl2) gas which is the etching gas is supplied to the
treatment chamber 24 through the secondgas supply piping 32 and the secondgas supply nozzles treatment chamber 24 through the firstgas supply piping 30 and the firstgas supply nozzles - (5) The gas supplies are stopped to evacuate the
treatment chamber 24. - (6) The H2 gas which is the purge gas is supplied to the
treatment chamber 24 through both of the firstgas supply piping 30 and the firstgas supply nozzles gas supply piping 32 and the secondgas supply nozzles - By performing the selective epitaxial growth of the Si film on the wafers a by repeating the steps (1) to (6) with the steps (1) to (6) being used as one cycle, it is possible to adjust both of the growth speed and the etching speed as well as to avoid the particle generation, thereby achieving good etching characteristics.
- As described in the foregoing, according to this invention, it is possible to provide the substrate treatment device capable of adjusting both of the growth speed and the etching speed in the Si or SiGe selective epitaxial growth, avoiding the particle generation from nozzles, and achieving good etching characteristics.
Claims (11)
1. A substrate treatment device at least using a Si-containing gas and a Cl2 gas and alternately supplying the Si-containing gas and the Cl2 gas to a treatment chamber for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising:
a substrate support member which supports the substrate in the treatment chamber;
a heating member provided outside the treatment chamber which heats the substrate and an atmosphere of the treatment chamber;
a gas supply system provided inside the treatment chamber; and
a discharge port opened on the treatment chamber, wherein:
the gas supply system comprises a first gas supply member which supplies the Si-containing gas and a second gas supply member which supplies the Cl2 gas, the second gas supply member being different from the first gas supply member; and
each of the first gas supply member and the second gas supply member comprises a plurality of gas supply nozzles which separately supply the Si-containing gas and the Cl2 gas to a plurality of different parts of the treatment chamber.
2. The substrate treatment device according to claim 1 , wherein the Si-containing gas is SiH4, Si2H6, or SiH2Cl2.
3. The substrate treatment device according to claim 1 , wherein the epitaxial film is any one of a Si film or a SiGe film.
4. The substrate treatment device according to claim 3 , wherein the SiGe film is formed by using, in addition to the Si-containing gas, a Ge-containing gas of which Ge is GeH4 or GeCl4.
5. The substrate treatment device according to claim 1 , wherein a purge gas is supplied to the second gas supply member when supplying the Si-containing gas, and the purge gas is supplied to the first gas supply member when supplying the Cl2 gas.
6. The substrate treatment device according to claim 5 , wherein the purge gas is H2.
7. A substrate treatment device at least using a Si-containing gas and a Cl2 gas for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising:
a gas supply system provided inside the treatment chamber and comprising a plurality of first gas supply nozzles having gas supply apertures opened at a plurality of different heights of the treatment chamber and a plurality of second gas supply nozzles having gas supply apertures opened at a plurality of different heights of the treatment chamber;
a discharge port opened on the treatment chamber; and
a control system which controls at least the gas supply system, wherein:
the control system controls the gas supply system in such a manner that at least the Si-containing gas is supplied from the first gas supply nozzles to the treatment chamber and at least the Cl-containing gas is supplied from the second gas supply nozzles to the treatment chamber.
8. The substrate treatment device according to claim 7 , wherein the control system controls the gas supply system in such a manner that a purge gas is supplied to the second gas supply nozzles when supplying the Si-containing gas and the purge gas is supplied to the first gas supply nozzles when supplying the Cl-containing gas.
9. The substrate treatment device according to claim 8 , wherein the purge gas is H2.
10. The substrate treatment device according to claim 9 , wherein the heights of the treatment chamber at which the gas supply apertures of the first gas supply nozzles are opened are identical with the heights of the treatment chamber at which the gas supply apertures of the second gas supply nozzles are opened.
11. A selective epitaxial film growth method for selectively growing an epitaxial film on a surface of a substrate housed in a treatment chamber in a substrate treatment device comprising a plurality of first gas supply nozzles for supplying at least a Si-containing gas to a plurality of different parts of the treatment chamber and a plurality of second gas supply nozzles for supplying at least a Cl-containing gas to a plurality of different parts of the treatment chamber, at least comprising:
supplying at least the Si-containing gas to the treatment chamber by using the first gas supply nozzles;
evacuating an atmosphere of the treatment chamber by stopping the Si-containing gas supply;
supplying a purge gas to the treatment chamber by using the first gas supply nozzles and the second gas supply nozzles;
supplying the Cl-containing gas at least as an etching gas to the treatment chamber by using the second gas supply nozzles;
evacuating an atmosphere of the treatment chamber by stopping the Cl-containing gas supply; and
supplying the purge gas to the treatment chamber by using the first gas supply nozzles and the second gas supply nozzles, the steps being repeated for growing the film to a desired thickness.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/067,117 US8652258B2 (en) | 2006-11-10 | 2011-05-10 | Substrate treatment device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-304936 | 2006-11-10 | ||
JP2006304936A JP4464949B2 (en) | 2006-11-10 | 2006-11-10 | Substrate processing apparatus and selective epitaxial film growth method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/067,117 Continuation US8652258B2 (en) | 2006-11-10 | 2011-05-10 | Substrate treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080135516A1 true US20080135516A1 (en) | 2008-06-12 |
Family
ID=39496741
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/979,816 Abandoned US20080135516A1 (en) | 2006-11-10 | 2007-11-08 | Substrate treatment device |
US13/067,117 Active US8652258B2 (en) | 2006-11-10 | 2011-05-10 | Substrate treatment device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/067,117 Active US8652258B2 (en) | 2006-11-10 | 2011-05-10 | Substrate treatment device |
Country Status (2)
Country | Link |
---|---|
US (2) | US20080135516A1 (en) |
JP (1) | JP4464949B2 (en) |
Cited By (175)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110212623A1 (en) * | 2006-11-10 | 2011-09-01 | Hitachi Kokusai Electric Inc. | Substrate treatment device |
US20150064908A1 (en) * | 2013-02-15 | 2015-03-05 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method for processing substrate and method for manufacturing semiconductor device |
CN110268506A (en) * | 2017-03-31 | 2019-09-20 | 株式会社国际电气 | Manufacturing method, substrate board treatment and the program of semiconductor device |
US20190304785A1 (en) * | 2016-11-03 | 2019-10-03 | Eugene Technology Co., Ltd. | Method for forming epitaxial layer at low temperature |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US20220170177A1 (en) * | 2020-11-30 | 2022-06-02 | Jinko Solar Co., Ltd. | Single Crystal Furnace |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) * | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) * | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
US11986868B2 (en) | 2020-02-28 | 2024-05-21 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
US12020938B2 (en) | 2022-07-07 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101623458B1 (en) * | 2008-03-26 | 2016-05-23 | 지티에이티 코포레이션 | Systems and methods for distributing gas in a chemical vapor deposition reactor |
JP5645718B2 (en) * | 2011-03-07 | 2014-12-24 | 東京エレクトロン株式会社 | Heat treatment equipment |
WO2013147481A1 (en) | 2012-03-28 | 2013-10-03 | 국제엘렉트릭코리아 주식회사 | Apparatus and cluster equipment for selective epitaxial growth |
US8785303B2 (en) * | 2012-06-01 | 2014-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for depositing amorphous silicon |
KR102326377B1 (en) * | 2016-06-07 | 2021-11-15 | 가부시키가이샤 코쿠사이 엘렉트릭 | Substrate processing apparatus, method of manufacturing semiconductor device and program |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5622566A (en) * | 1993-09-16 | 1997-04-22 | Tokyo Electron Limited | Film-forming apparatus |
US6107197A (en) * | 1996-01-10 | 2000-08-22 | Nec Corporation | Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth |
US20050287806A1 (en) * | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
US20070034158A1 (en) * | 2003-08-07 | 2007-02-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device producing method |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0316208A (en) | 1989-06-14 | 1991-01-24 | Nec Corp | Apparatus for silicon epitaxial growth |
JPH0715888B2 (en) | 1990-10-01 | 1995-02-22 | 日本電気株式会社 | Method and apparatus for selective growth of silicon epitaxial film |
JPH04163912A (en) | 1990-10-29 | 1992-06-09 | Nec Corp | Vapor growth equipment |
JPH05206106A (en) | 1992-01-09 | 1993-08-13 | Nec Corp | Vacuum vapor phase growth device |
KR970072061A (en) * | 1996-04-16 | 1997-11-07 | 김광호 | A diffusion furnace used in a semiconductor manufacturing process |
JP3969859B2 (en) | 1998-08-26 | 2007-09-05 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
JP2000311860A (en) | 1999-04-27 | 2000-11-07 | Sony Corp | Cleaning method in vertical reduced pressure cvd system and vertical reduced pressure cvd system with cleaning mechanism |
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
KR100375102B1 (en) | 2000-10-18 | 2003-03-08 | 삼성전자주식회사 | Method for CVD and apparatus for performing the same in semiconductor device processing |
JP2003077845A (en) * | 2001-09-05 | 2003-03-14 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device and substrate treatment apparatus |
US6905963B2 (en) * | 2001-10-05 | 2005-06-14 | Hitachi Kokusai Electric, Inc. | Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases |
US6869880B2 (en) * | 2002-01-24 | 2005-03-22 | Applied Materials, Inc. | In situ application of etch back for improved deposition into high-aspect-ratio features |
US20060124058A1 (en) * | 2002-11-11 | 2006-06-15 | Hitachi Kokusai Electric Inc. | Substrate processing device |
JP2005243924A (en) | 2004-02-26 | 2005-09-08 | Hitachi Kokusai Electric Inc | Substrate processing device |
KR100636037B1 (en) * | 2004-11-19 | 2006-10-18 | 삼성전자주식회사 | Method of forming a titanium nitride layer and apparatus for performing the same |
KR100841866B1 (en) * | 2005-02-17 | 2008-06-27 | 가부시키가이샤 히다치 고쿠사이 덴키 | Production method for semiconductor device and substrate processing device |
JP4506677B2 (en) * | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | Film forming method, film forming apparatus, and storage medium |
KR100642646B1 (en) * | 2005-07-08 | 2006-11-10 | 삼성전자주식회사 | Methods of selectively forming an epitaxial semiconductor layer using a ultra high vacuum chemical vapor deposition technique and batch-type ultra high vacuum chemical vapor deposition apparatus used therein |
JP4832022B2 (en) | 2005-07-29 | 2011-12-07 | 株式会社日立国際電気 | Substrate processing equipment |
WO2007108401A1 (en) * | 2006-03-20 | 2007-09-27 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method and substrate processing apparatus |
TWI397115B (en) * | 2006-03-27 | 2013-05-21 | Hitachi Int Electric Inc | A method of manufacturing a semiconductor device and device of processing substrate and cleaning method |
JP4464949B2 (en) * | 2006-11-10 | 2010-05-19 | 株式会社日立国際電気 | Substrate processing apparatus and selective epitaxial film growth method |
US20090136652A1 (en) * | 2007-06-24 | 2009-05-28 | Applied Materials, Inc. | Showerhead design with precursor source |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
JP2010141223A (en) * | 2008-12-15 | 2010-06-24 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device and substrate processing apparatus |
JP5610438B2 (en) * | 2010-01-29 | 2014-10-22 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
US8409352B2 (en) * | 2010-03-01 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
-
2006
- 2006-11-10 JP JP2006304936A patent/JP4464949B2/en active Active
-
2007
- 2007-11-08 US US11/979,816 patent/US20080135516A1/en not_active Abandoned
-
2011
- 2011-05-10 US US13/067,117 patent/US8652258B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5622566A (en) * | 1993-09-16 | 1997-04-22 | Tokyo Electron Limited | Film-forming apparatus |
US6107197A (en) * | 1996-01-10 | 2000-08-22 | Nec Corporation | Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth |
US20070034158A1 (en) * | 2003-08-07 | 2007-02-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device producing method |
US20050287806A1 (en) * | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
Cited By (203)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110212623A1 (en) * | 2006-11-10 | 2011-09-01 | Hitachi Kokusai Electric Inc. | Substrate treatment device |
US8652258B2 (en) * | 2006-11-10 | 2014-02-18 | Hitachi Kokusai Electric Inc. | Substrate treatment device |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
US20150064908A1 (en) * | 2013-02-15 | 2015-03-05 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method for processing substrate and method for manufacturing semiconductor device |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US20190304785A1 (en) * | 2016-11-03 | 2019-10-03 | Eugene Technology Co., Ltd. | Method for forming epitaxial layer at low temperature |
US10796915B2 (en) * | 2016-11-03 | 2020-10-06 | Eugene Technology Co., Ltd. | Method for forming epitaxial layer at low temperature |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US11581186B2 (en) * | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) * | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11970766B2 (en) | 2016-12-15 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11851755B2 (en) | 2016-12-15 | 2023-12-26 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US12000042B2 (en) | 2016-12-15 | 2024-06-04 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US11152215B2 (en) | 2017-03-31 | 2021-10-19 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium |
CN110268506A (en) * | 2017-03-31 | 2019-09-20 | 株式会社国际电气 | Manufacturing method, substrate board treatment and the program of semiconductor device |
US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11976361B2 (en) | 2017-06-28 | 2024-05-07 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11972944B2 (en) | 2018-01-19 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11453946B2 (en) | 2019-06-06 | 2022-09-27 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11986868B2 (en) | 2020-02-28 | 2024-05-21 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
US11837494B2 (en) | 2020-03-11 | 2023-12-05 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11795570B2 (en) * | 2020-11-30 | 2023-10-24 | Jinko Solar Co., Ltd. | Single crystal furnace |
US20220170177A1 (en) * | 2020-11-30 | 2022-06-02 | Jinko Solar Co., Ltd. | Single Crystal Furnace |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
US12020934B2 (en) | 2021-04-16 | 2024-06-25 | Asm Ip Holding B.V. | Substrate processing method |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US12020938B2 (en) | 2022-07-07 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
Also Published As
Publication number | Publication date |
---|---|
JP4464949B2 (en) | 2010-05-19 |
JP2008124181A (en) | 2008-05-29 |
US20110212623A1 (en) | 2011-09-01 |
US8652258B2 (en) | 2014-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8652258B2 (en) | Substrate treatment device | |
US20090017638A1 (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
US8673076B2 (en) | Substrate processing apparatus and semiconductor device producing method | |
US7556839B2 (en) | Method of manufacturing semiconductor device and apparatus for processing substrate | |
JP5562409B2 (en) | Semiconductor device manufacturing method, substrate manufacturing method, and substrate processing apparatus | |
US8071477B2 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
JP5560093B2 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and substrate manufacturing method | |
US20130149846A1 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
KR101077106B1 (en) | Substrate processing apparatus and manufacturing method of semiconductor device | |
JP4699545B2 (en) | Vapor growth apparatus and vapor growth method | |
US7700054B2 (en) | Substrate processing apparatus having gas side flow via gas inlet | |
KR101685096B1 (en) | Apparatus for processing substrate and method for processing substrate using the same | |
US20100282166A1 (en) | Heat treatment apparatus and method of heat treatment | |
KR100996689B1 (en) | Manufacturing method of semiconductor apparatus, film forming method and substrate processing apparatus | |
US20130137272A1 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
JP2013197507A (en) | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method | |
JP2014099427A (en) | Substrate processing apparatus and process of manufacturing substrate | |
US20150064908A1 (en) | Substrate processing apparatus, method for processing substrate and method for manufacturing semiconductor device | |
JP4832022B2 (en) | Substrate processing equipment | |
JP2006186015A (en) | Substrate processor | |
JP2004095940A (en) | Method of manufacturing semiconductor device | |
CN115584481A (en) | Chemical vapor deposition furnace with cleaning gas system for providing cleaning gas | |
TW202307260A (en) | Chemical vapor deposition furnace and method for depositing films | |
JP2011157235A (en) | Apparatus and method for producing crystal | |
JP2011066214A (en) | Method of manufacturing semiconductor device and substrate processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HITACHI KOKUSAI ELECTRIC INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YOKOGAWA, TAKASHI;INOKUCHI, YASUHIRO;YAMAMOTO, KATSUHIKO;AND OTHERS;REEL/FRAME:020524/0952 Effective date: 20080123 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |