DE102008052750A1 - Device for metal organic chemical vapor deposition, comprises reactor with upper- and lower cover, wafer-applying unit with susceptors, heating unit, rotary drive unit, gas supply unit with gas supply connections, and gas output unit - Google Patents

Abstract

The device for metal organic chemical vapor deposition (MOCVD), comprises a reactor (110) with an upper- and a lower cover, which form an inner chamber with a pre-determined size, if they are connected, a wafer-applying unit (120) with an upper- and a lower susceptor, which are rotatably mounted at an upper and a lower hollow shaft, a heating unit (130), a rotary drive unit (140), which provides force for rotating the susceptors around the upper and the lower hollow shaft, a gas supply unit (150) with an upper- and a lower gas supply connection, and a gas output unit (160). The device for metal organic chemical vapor deposition (MOCVD), comprises a reactor (110) with an upper- and a lower cover, which form an inner chamber with a pre-determined size, if they are connected, a wafer-applying unit (120) with an upper- and a lower susceptor, which are rotatably mounted at an upper and a lower hollow shaft, a heating unit (130), a rotary drive unit (140), which provides force for rotating the susceptors around the upper and the lower hollow shaft, a gas supply unit (150) with an upper- and a lower gas supply connection, and a gas output unit (160), which is adjacently arranged on an outer circumference of the upper and the lower cover and is connected with the interior of the reactor, in order to outwardly discharge the reaction gas. The wafer is present on opposite-lying surfaces of the upper and the lower susceptors. The gas supply unit supplies reaction gas between the opposite-lying surfaces of the upper and the lower susceptors via a centric gas supply nozzle, which is connected with the upper and the lower hollow shaft. The gas supply connections are connected with the upper and the lower hollow shaft. The heating unit comprises an upper heating device present between the upper cover and the upper susceptor and a lower heating device present between the lower cover and the lower susceptor. The hollow shafts are present at the upper and/or the lower cover. The reactor is provided at a side with a cover-rotation section, which comprises a moment arm whose end is connected with the upper or the lower cover, and a stationary arm, whose upper end is connected with the moment arm by a drive shaft. The upper susceptor is provided with flexible wires, whose fixed end is fastened to the upper susceptor and free end is deformed in such a way that it is bent and is in contact with the surface of the wafer. The upper and the lower heating devices are operated independently in such a way that they heat the upper and the lower susceptor on a same temperature or different temperatures. The rotary drive unit contains an upper and a lower torque motor, which comprise drive shafts, which have gear wheels propelling at their front sides and are present at outer circumference surfaces of the upper and/or lower susceptors. The torque motor turn and the susceptors rotate in same direction and with same speed. The upper and the lower covers are provided with an upper- and/or a lower temperature sensor, which are adjacently arranged on the exterior surfaces of the susceptors or the heating devices. A supply position of the reaction gas is identical to the central position of a vertical distance between the upper and the lower susceptor. The gas output unit is provided with a ring-like insertion element, which is adjacently arranged on the upper and the lower cover, with an output connection, which is present at the insertion element so that it is open to the interior of the reactor, and with an exit gas line, which is connected with the output connection. The gas output unit comprises an output line, which extends from outlet of the upper and the lower hollow shaft beyond the upper and the lower cover to a predetermined length or an output line, which is mounted at the outlet of the upper and the lower hollow shaft.

Description

CROSS-REFERENCE TO RELATED REGISTRATIONS

The present application claims the priority of filed with the Korean Patent Office on December 13, 2007 Korean Patent Application No. 2007-129715 , the disclosure of which is hereby incorporated by reference.

BACKGROUND OF THE INVENTION

Field of the invention

The The present invention relates to an organometallic device Gas phase deposition, with the simultaneous deposition layers of wafers can be bred or raised, the are arranged opposite one another.

Description of the related technology

in the Generally, chemical vapor deposition (chemical vapor deposition - CVD) as the main method of growth various crystal films used on different substrates Service. In contrast to a liquid phase epitaxy (liquid Phase epitaxy - LPE), this method has advantages, such as for example, the quality of the grown crystal, but also deficiencies, such as relatively low Growth rate of the crystal, up. To solve this problem, There is widespread a method of growing up in several at one time Substrates have been used in a growth cycle.

By the current development in miniaturization and Performance improvement of semiconductor devices as well as high power LED has interest in the CVD process on the organometallic Vapor Deposition (Metal Organic Chemical Vapor Deposition - MOCVD) focused, which is a CVD method for a compound semiconductor, with the metal compound on a semiconductor substrate using a thermal Decomposition reaction of organic metal is deposited.

1 is a construction diagram illustrating a conventional device for MOCVD, wherein the device 10 a chamber 11 with an interior of a certain size, a susceptor 12 (or a subset 12 ) with a variety of cavities 12a on which a wafer 2 on which is to be deposited, is hung up, a heater 13 under the susceptor 12 To provide heat, a rotary motor 17 with a drive shaft 17a that with the susceptor 12 connected to provide rotational power, a gas inlet port 14 , via the reaction gas into the chamber 11 is initiated, and a gas outlet port 15 contains, is discharged via the reaction exhaust gas.

In the device 10 is a nozzle 16 located at a lower end of the gas inlet port 14 is present, arranged in the middle of the chamber, allowing reaction gas, ie the source gas and carrier gas, the center of the chamber 11 over nozzle holes 16a the nozzle 16 is supplied.

The reaction gas comes with the top of the wafer 2 in contact with the susceptor 12 is hung up, and at the same time heats the susceptor 12 by the radiant heat from the heater 13 is heated, the wafer 2 to high temperature. Then, the reaction gas becomes the top of the wafer 2 having a high temperature, reacted via a chemical deposition process, so as to form a nitride growth layer on the surface of the wafer 2 train. Spent reaction gas whose reaction is completed is sent via the outlet port together with a by-product 15 pushed out.

However, in particular, when forming a growth layer based on InGaN, since the growth temperature is generally 700 to 800 ° C and a temperature difference between the top surface, ie, the growth area, of the wafer increases 2 and the thickness of the chamber 11 is large, the reaction gas upward, and it comes to thermal convection A, so that a composition of the growth layer is inhomogeneous or otherwise, a chemical deposition reaction does not take place uniformly.

Furthermore, the thermal convection A in the chamber 11 even stronger when the growth temperature reaches 1000 ° C, so that a turbulent flow is formed, which leads problematical that in GaN: Mg growth, a doping profile of Mg is inhomogeneous.

According to the prior art, in order to solve these problems, a solution has been proposed in which the flow rate of the reaction gas has been increased or a method of transporting the reaction gas has been changed so as to correct the inhomogeneity of a growth layer formed on a wafer. However, this method also has a problem in that, when the growth pressure, feed ratio of reaction gas or a shape of a reaction nozzle supply nozzle is changed, the homogeneity of the composition of a growth layer can be easily disturbed and a process window becomes narrow becomes.

Farther achieved what the flow rate of the reaction gas For example, even if a homogeneous state with 0.5 m / s and 200 Torr is reached, the feed pressure of the reaction gas 400 Torr, and the flow rate of the reaction gas is reduced to 0.25 m / s, causing a vortex flow arises and the homogeneity is disturbed.

If the same flow rate is to be maintained, the flow rate must be doubled or a distance between an upper surface of the susceptor 12 and the ceiling of the chamber 11 must be halved, so that a mass flow controller is previously sized large or the device is modified on the device side, which is expensive.

Further, when a method for supplying reaction gas is to be improved in order to ensure the homogeneity of a growth layer when growing AlInGaN, an organometallic compound is generally used as Group 3 gas, NH _{3 is used} as the group gas 5 and uses N ₂ and H ₂ as the carrier gas, and when the proportion of NH ₃ which is relatively large is changed, the composition homogeneity of the group 3 gas is often disturbed, so that a process window with both crystallization and homogeneity be limited.

There as the main cause of such a phenomenon the thermal convection that occurs in a chamber, it is difficult to design a reaction furnace such that thermal Convection is generated so that a reaction furnace with a wide Process window, with the homogeneity easy to ensure is, can be created.

SUMMARY OF THE INVENTION

The The present invention has been made to be as described above Problems of the prior art to solve, and therefore concerns An object of the present invention is an organometallic device Vapor Deposition (MOCVD), which is capable of substantially to limit the occurrence of thermal convection, the by a temperature difference between the upper and the lower Section inside a chamber caused by a vapor deposition reaction becomes.

A Another object of the present invention relates to a MOCVD device, even in a high temperature environment, a stream of reaction gas is a stable laminar flow and a wafer at the same temperature is heated.

A Another object of the present invention relates to a MOCVD device, in the efficient use of an organometallic source material is improved when on wafers, which are opposite each other are arranged, grown at the same time, around growth layers train.

According to one Aspect of the present invention is a device for metalorganic vapor deposition (Metal Organic Chemical Vapor Deposition - MOCVD) created a reaction chamber with a top cover that is open at the bottom and a bottom one Cover that is open to the top to an interior with a to form specific size when facing each other a wafer laying unit with an upper and a lower susceptor rotatable at an upper and a lower respectively Hollow shaft are mounted on the upper and lower cover are present to at least one or more wafers on each other opposite surfaces of the upper and lower Susceptors, a heating unit with an upper heater, which exists between the top cover and the top susceptor is, and a lower heater between the lower Cover and the lower susceptor is present to the upper and to provide radiant heat to the lower susceptor, a rotary drive unit, the force for turning the upper and lower susceptor in one direction around the upper and lower hollow shaft around provides a gas supply unit with an upper and a lower gas supply port connected to the upper one or the lower hollow shaft are connected to reaction gas between the opposite surfaces of the upper and the lower susceptor via a central Gaszuführdüse feed, with the upper and lower hollow shaft is connected, and contains a gas ejection unit, to an outer periphery of the upper and the lower cover is arranged adjacent to the interior of the reaction chamber is connected, so as to eject the reaction gas, the stopped reacting with the wafers.

The Reaction chamber may further provided on one side with a cover rotary section be a pivot arm whose one end with the top or the lower cover is connected, as well as a stationary Arm contains, whose upper end over a drive shaft connected to the rotary arm.

The upper susceptor may be provided with a plurality of elastic wires, one of which, solid End is attached to the upper susceptor and the other, free end is deformed so that it is bent, and is elastically in contact with the surface of the wafer.

The Upper and lower heater can be independent be controlled from each other so that they are the upper and the lower Susceptor to the same temperature or different temperatures heat.

The Rotary drive unit may have an upper and a lower rotary motor included, each having drive shafts, which at their front Pages each have driving gears that are driven with Gear wheels are engaged, the outer peripheral surfaces of the upper and lower susceptors are present.

Of the upper and lower rotary motor can the upper and the lower susceptor in the same direction and with the same Turn speed.

The upper and lower cover can be with an upper or lower temperature sensor to be provided on the outer surfaces of the upper and lower susceptors or the upper and lower ones Heating device are arranged adjacent to the heating temperature to eat.

A Feed position of the reaction gas, which over the fed central gas supply nozzle in the reaction chamber can be identical to that of a center position of a vertical Distance between the upper and the lower susceptor.

The Gas ejection unit can with a ring-like insert element, disposed adjacent the upper and lower covers is, with a discharge port, which is present on the insert element is and is open to the interior of the reaction chamber, as well be provided with an ejection line with the discharge port connected is.

According to one Another aspect of the present invention is a device created for metal-organic vapor deposition (MOCVD), which has a reaction chamber with a top cover facing down is open, and a lower cover that is open at the top, around an interior of a certain size when joined together, form a wafer laying unit with an upper and a lower susceptor, which rotate on one upper or a lower hollow shaft are mounted on the upper and the lower cover are present to at least one or several wafers on opposite surfaces of the lower or upper susceptor, a heating unit with an upper heater between the top cover and the upper susceptor, and a lower heater, which exists between the lower cover and the lower susceptor is to radiate heat to the upper and lower susceptors to provide a rotary drive unit, the power to rotate of the upper and lower susceptors in a direction around the upper one and the lower hollow shaft provides, a gas supply unit, to an outer periphery of the upper and the lower cover is disposed adjacent and a gas supply port has, which is connected to the interior of the reaction chamber to Reaction gas between the opposing surfaces of the upper and lower susceptors, as well as a gas ejection unit for ejecting the reaction gas contains, which has stopped reacting with the wafer over the upper and the lower hollow shaft.

The Reaction chamber may further provided on one side with a cover rotary section be a pivot arm whose one end with the top or the lower cover is connected, and a stationary one Arm contains, whose upper end over a drive shaft connected to the rotary arm.

Of the Upper susceptor can be made with a variety of elastic wires be provided, one of which, fixed end to the upper susceptor is fixed and whose other, free end is deformed so that It is bent and elastic in contact with the surface of the wafer.

The Upper and lower heater can be independent be controlled from each other so that they are the upper and the lower Susceptor to the same temperature or different temperatures heat.

The Rotary drive unit may have an upper and a lower rotary motor included, each having drive shafts on their front sides each have driving gears that are driven with Gear wheels are engaged, the outer peripheral surfaces of the upper and lower susceptors are present.

Of the upper and lower rotary motor can the upper and the lower susceptor in the same direction and with the same Turn speed.

The upper and lower covers may be provided with upper and lower temperature sensors, respectively, adjacent to the outer surfaces of the upper and lower susceptors or the upper and lower heaters are net to measure the heating temperature.

The Gas supply unit can with a ring-like insert element, disposed adjacent the upper and lower covers is, with an air supply connection, to the insert element is present so that it goes to the interior of the reaction chamber is open, and provided with a gas supply port be with the air supply connection via a Air supply line is connected.

A Feed position of the reaction gas, which over the Air supply connection is supplied, can be identical with the center position of a vertical distance between the top and the lower susceptor.

The Gas ejection unit may include an ejection line, extending from omitting the upper and lower hollow shafts beyond the upper and the lower cover up to a certain length extends, or may otherwise contain an ejection line, which are mounted on the omissions of the upper and lower hollow shaft is.

According to the The present invention will be in the state in which the wafers each other arranged opposite in the interior of the reaction chamber are, which consists of the upper and the lower cover, the connected to each other and separated from each other to the reaction chamber to close / open, gas flow paths each created so that reaction gas from the center of the reaction chamber ejected to the outer periphery of the reaction chamber and vice versa. Accordingly, the occurrence becomes more thermal Convection caused by a temperature difference between the upper and the lower portion inside the chamber in the vapor deposition reaction is, essentially, restricted, making it possible is, high quality wafers with homogeneously deposited growth layer manufacture.

Of Further, even at high temperature, there is a stream of reaction gas stable as a laminar flow, and a wafer becomes at the same temperature heated, so that at the same time both homogeneity and Crystallization of the growth layer are ensured.

Of Further, there are wafers facing each other Growing to form growth layers at the same time, allowing the efficient use of an organometallic Source material is improved.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other benefits The present invention will become more apparent from the following detailed Description in conjunction with the attached drawings better understood, wherein:

1 Fig. 12 is a construction diagram illustrating a conventional metalorganic vapor deposition apparatus;

2 Fig. 10 is a sectional view illustrating a MOCVD apparatus according to a first embodiment of the present invention in a closed state;

3 Fig. 10 is a sectional view illustrating the MOCVD apparatus according to the first embodiment of the present invention in an open state;

4 Fig. 13 is a view showing the state of the MOCVD apparatus according to the first embodiment of the present invention, showing a flow of feed gas and a discharge of reaction gas;

5 a plan view along the line 4-4 'in 4 is;

6 Fig. 10 is a sectional view showing a MOCVD apparatus according to a second embodiment of the present invention in a closed state;

7 Fig. 10 is a sectional view showing the MOCVD apparatus according to the second embodiment of the present invention in an opened state; and

8th is a view illustrating the state of the MOCVD apparatus according to the second embodiment of the present invention, wherein a current in the supply and the discharge of reaction gas is shown.

DETAILED DESCRIPTION THE PREFERRED EMBODIMENT

preferred Embodiments of the present invention are described in US Pat Following with reference to the accompanying drawings described. In the following description will be known functions or constructions are not described in detail, otherwise the invention is not due to unnecessary details would be clear.

It It should be noted that in all drawings the same reference numerals be used to the same or similar elements, Characteristics and structures.

2 Fig. 10 is a sectional view showing a metal organic vapor deposition (MOCVD) apparatus in a closed state according to a first embodiment of the present invention; 3 FIG. 10 is a sectional view showing the MOCVD apparatus according to the first embodiment of the present invention in an open state, and FIG 4 FIG. 14 is a view illustrating the state of the MOCVD apparatus according to the first embodiment of the present invention, showing a flow in supplying and discharging reaction gas. FIG.

The MOCVD device 100 according to the first embodiment of the present invention is as in 2 to 5 shown a device with the same time growing layers on the surfaces of the wafer 2 are deposited, which are arranged opposite to each other, and it contains a reaction chamber 110 , a wafer laying unit 120 , a heating unit 130 , a rotary drive unit 140 , a gas supply unit 150 and a gas ejection unit 160 ,

The reaction chamber 110 has a top cover 111 and a lower cover 112 which form an interior of a certain size when joined together. The top cover 111 is an upper structure that is open at the bottom and an inner ceiling surface 111 that with an insulating material 113 is provided.

The lower cover 112 is a lower structure that is open at the top and an inner bottom surface 112a that with an insulating material 114 is provided.

Preferably, the upper and lower covers 111 and 112 with cooling water pipe 115 respectively. 116 provided in the same, flows through the fluid, such as cooling water, in one direction to the bodies of the upper and the lower cover 111 and 112 to cool.

Furthermore, the reaction chamber 110 at one end with a cover rotary section 170 Be provided with the upper or the lower cover 111 and 112 be rotated to separate these covers from each other or merge. The cover rotary section 170 contains a swivel arm 171 one end of which is the top cover 111 connected, and a stationary arm 173 whose upper end via a propeller shaft 172 with the rotary arm 171 connected is.

It is shown that the rotary arm 171 with the top cover 111 is connected so that it rotates relative to the lower cover, so the upper cover 111 with the lower cover 112 to connect or disconnect from it. However, the invention is not limited to this structure.

The wafer laying unit 120 contains an upper and a lower susceptor 121 and 122 , The upper susceptor 120 is in the top cover 111 arranged and is rotatable on an upper hollow shaft 125 mounted in the middle of the top cover 111 is arranged.

The lower susceptor 122 is in the lower cover 112 arranged and is rotatable on a lower hollow shaft 126 mounted in the middle of the lower cover 112 is arranged.

The upper and lower hollow shaft 125 and 126 are by means of a rotary support member (not shown), such as a bearing element or a bush, in the center mounting holes 121b and 122b is arranged through the midpoints of the upper and lower susceptor 121 and 122 are formed through, rotatably mounted.

Furthermore, the upper and the lower hollow shaft 125 and 126 realized as a hollow tube elements through which a reaction gas flows freely.

The upper and the lower susceptor 121 and 122 are each on their surfaces with disc-like depressions 121 and 122a provided so that wafers 2 can be applied to the deposited, and they are arranged so that in the depressions 121 and 122a applied wafer 2 are arranged opposite one another.

Here is the upper susceptor 121 with a variety of elastic wires 124 provided to prevent that in the recess 121 applied wafer 2 be solved thereby, wherein a fixed end of the elastic wire to the upper susceptor 121 is fixed and the other, free end of the elastic wire is deformed so that it is bent so that it comes into elastic contact with the surface of the wafer.

Such are the wafers 2 , each in the wells 121 and 122a of the upper and lower susceptors 121 and 122 are placed so arranged that the upper surfaces, ie the Abscheideflächen, are arranged at a uniform distance opposite each other.

The heating unit 130 Radiant heat acts on the upper and lower susceptors to heat the wafers on the susceptors and includes upper and lower susceptors heater 131 and 132 ,

The upper heater 131 is an electrical heating element that is between the inner ceiling surface of the top cover 111 and the upper susceptor 121 is arranged so that it generates heat when power is applied thereto, and the lower heater 132 is an electric heating element between the inner bottom surface of the lower cover 112 and the lower susceptor 122 is arranged to generate constant temperature heat when current is applied thereto.

The upper and lower heater 131 and 132 are preferably in the areas that the upper and the lower susceptor 121 and 122 correspond, arranged adjacent to their surfaces.

The top and bottom covers 111 and 112 are with an upper or a lower temperature sensor 134 and 135 provided with probe rods of the same to the outer surface of the upper and the lower susceptor 121 and 122 or the upper and lower heaters 131 and 132 are arranged adjacent to measure heating temperature.

Thereby the upper and the lower heating device become 131 and 132 each independently controlled to the upper and lower susceptor 121 and 122 to heat to the same temperature or different temperatures.

The rotary drive unit 140 is a unit that provides power to the upper and lower susceptor 121 and 122 in one direction around the upper and lower hollow shafts 125 and 126 turn around in the upper and lower covers 111 and 112 available. The rotary drive unit includes an upper and a lower rotary motor 141 and 142 , the drive shafts 143 respectively. 144 have on their front sides each driving wheels, with driven wheels 145 and 146 are engaged on outer peripheral surfaces of the upper and lower susceptor 121 respectively. 122 available.

Here are the upper and lower rotary motor 141 and 142 Motor elements fixed to the outer surface of the upper and lower cover 111 and 112 are attached, and their drive shafts 143 and 144 are arranged so that they pass through the upper and lower cover 111 and 112 pass through.

Preferably, when current is applied, the upper and lower rotating motors rotate 141 and 142 the upper and the lower susceptor 121 and 122 , which are opposed to each other, in the same direction and at the same speed around the upper and the lower hollow shaft 125 and 126 around.

The gas supply unit 150 is a unit with the reaction gas on a gas flow path from the center to the edge of the reaction chamber between the opposing surfaces of the upper and lower susceptor 121 and 122 is supplied.

The gas supply unit 154 is with an upper and a lower gas supply connection 151 and 152 provided with the upper and the lower hollow shaft 125 and 126 are connected, between which a central Gaszuführdüse 153 connected.

The central gas supply nozzle 153 is with a variety of nozzles 154 for discharging the reaction gas passing through the upper and lower gas supply ports 151 and 152 is supplied.

In this case, a feed position of the reaction gas, via the central Gaszuführdüse 153 is fed, preferably substantially identical to the center position of a vertical distance between the upper and the lower susceptor 121 and 122 ,

Although the central gas supply nozzle 153 is described as being at the upper end of the lower hollow shaft 126 attached, it is not limited to this, but can be at the lower end of the upper hollow shaft 125 be attached.

Furthermore, although the central gas supply nozzle 153 is described as being a hollow member whose outer diameter is larger than that of the upper and lower hollow shafts 125 and 126 Not limited thereto, but may have an outer diameter that is smaller than or equal to that of the upper and lower hollow shaft 125 and 126 ,

The gas ejection unit 160 expels the spent reaction gas, whose reaction via contact with the opposing surfaces of the wafer 2 for forming the growth layers on the tops of the wafers 2 is completed.

The gas ejection unit 160 is with a ring-like insert element 161 attached to the outer perimeter of the upper and lower covers 111 and 112 is disposed adjacent, with a discharge port 162 in the insert element 161 is present, as well as with a discharge line 163 verse hen with the discharge connection 162 connected is.

So, as in 3 shown when the top cover 111 that with the rotary arm 171 is connected by the opening operation of the cover rotation unit 170 in the drawing relative to the fixed lower cover 112 is rotated clockwise, the upper and lower susceptor 121 and 122 in the upper and lower covers 111 and 121 are present, open to the outside.

In this state, the wafers 2 to be deposited on, in the respective wells 121 and 122a hung up on the upper and the lower susceptor 121 and 122 are formed. It is because of the upper susceptor 121 applied wafers 2 can fall down by its weight, the elastic wire 124 whose fixed end is at the upper susceptor 121 is attached, so that the other, free end of the same in elastic contact with the surface of the wafer 2 is brought.

At the completion of laying the wafers 2 be when the top cover 111 that with the rotary arm 171 connected by the closing operation of the cover rotary unit 170 in the drawing relative to the fixed lower cover 112 Turned clockwise, the top and bottom covers 111 and 112 by means of the ring-like insert element 161 , which is arranged adjacent to its outer periphery, guided together, so that a closed interior of a certain size between the lower and upper cover 111 and 112 and the insert element 161 arises.

Along with this, power is supplied to the upper and lower heaters 131 and 132 applied to the upper and the lower susceptor 121 and 122 to heat with radiant heat and so the wafers thereon 2 to a temperature range between 700 ° C and 1200 ° C to heat.

Furthermore, when power is applied to the upper and lower rotors 141 and 142 is applied in the upper and lower cover 111 and 112 are present so as to drive shafts 143 respectively. 144 to rotate, the upper and lower susceptor 121 and 122 by the gear meshing between the driving gears that are integral or separate at the respective ends of the drive shafts 143 and 144 are present, and the driven gears 145 and 146 located on the outer perimeter of the upper and lower susceptors 121 and 122 are present, rotated in the same direction around the upper and lower hollow shaft.

In this state, the reaction gas passing through the upper and the lower gas supply port 151 and 152 is supplied, the central gas supply nozzle 153 between the upper and lower hollow shaft 125 and 126 is present, over the upper and the lower hollow shaft 125 and 126 fed. The reaction gas passing through the nozzle holes 154 the central gas supply nozzle 153 is fed, as in 4 is formed, forms a reaction gas stream B, which from the center of the interior of the reaction chamber 110 flows to its edge.

The reaction gas stream B is via a gas flow path between the upper and the lower susceptor 121 and 122 is formed, to the gas ejection unit 160 pushed out. The laying surfaces of the upper and lower susceptors correspond 121 and 122 the ceiling surface or the bottom surface of the gas flow path.

Thereby the upper and the lower susceptor become 121 and 122 opposing each other through the upper and lower heaters 131 and 132 heated to the same temperature so that there is no temperature difference between them. This substantially prevents thermal convection from occurring due to the temperature difference between the ceiling surface and the bottom surface of the gas flow path, and stable gas supply is enabled regardless of a gas flow velocity or a shape of a nozzle.

Thus, the reaction gas causes through the upper and the lower susceptor 121 and 122 flows opposite to each other, chemical deposition on the tops of the wafers 2 which is to be deposited on, so as to form homogeneous growth layers on the surfaces of the wafers. Then, spent reaction gas whose reaction is completed, together with a by-product via the introduction port 162 in the insert element 161 is present, and the associated discharge line 163 expelled to the outside.

According to the Invention thus becomes a current even in a high-temperature environment from reaction gas to a stable laminar flow, and Wafers are heated to the same temperature, so that both Homogeneity as well as crystallization of the growth layer are guaranteed and continue to grow up on wafers placed opposite one another, for forming growth layers simultaneously, so that the efficiency of the Use of an organometallic material source is improved.

6 FIG. 10 is a sectional view showing an MOCVD apparatus according to a second embodiment of the present invention. FIG shows his condition 7 FIG. 10 is a sectional view showing the MOCVD apparatus according to the second embodiment of the present invention in the open state; and FIG 8th Fig. 13 is a view showing the state of the MOCVD apparatus according to the second embodiment of the present invention, showing a flow in supplying and discharging reaction gas.

The MOCVD device 200 according to the second embodiment of the present invention is as in 6 to 8th shown a device with which simultaneous growth layers on the surfaces of the wafer 2 are deposited, which are arranged opposite to each other, and it contains a reaction chamber 210 , a wafer laying unit 220 , a heating unit 230 , a rotary drive unit 240 , a gas ejection unit 250 and a gas supply unit 260 ,

The reaction chamber 210 has a top cover 211 and a lower cover 212 and, when connected, form an interior of a certain size. The top cover 211 is an upper structure that is open at the bottom, with an inner ceiling surface 211 same with an insulating material 213 is provided.

The lower cover 212 is a lower structure that is open at the top, with an inner bottom surface 212a same with an insulating material 214 is provided.

Preferably, the upper and lower covers 211 and 212 each with cooling water pipes 215 and 216 in which fluid, such as cooling water, flows in one direction around the bodies of the lower and upper covers 211 and 212 to cool.

Furthermore, the reaction chamber 210 at one end with a cover rotary section 270 Be provided with the upper or the lower cover 211 and 212 be rotated to separate these panels or merge. The cover rotary section 270 contains a swivel arm 271 one end of which is the top cover 210 connected, as well as a stationary arm 273 whose upper end via a propeller shaft 272 with the rotary arm 271 connected is.

It is shown that the rotary arm 271 with the top cover 211 connected to it relative to the lower cover 212 to turn and so the top cover 211 to connect to or disconnect from the lower cover. However, the invention is not limited thereto.

The wafer laying unit 220 contains an upper and a lower susceptor 221 and 222 , The upper susceptor 220 is in the top cover 211 arranged and rotatable on an upper hollow shaft 225 mounted in the middle of the top cover 211 is arranged.

The lower susceptor 222 is in the lower cover 212 arranged and is rotatable on a lower hollow shaft 226 mounted in the middle of the lower cover 212 is arranged.

The upper and lower hollow shaft 225 and 226 are by means of a rotary support member (not shown), such as a bearing element or a socket, in the center mounting holes 221b and 222b is arranged through the middle of the upper and lower susceptor 221 and 222 are formed through, rotatably mounted.

Furthermore, the upper and the lower hollow shaft 225 and 226 executed with a hollow tube member through which the reaction gas flows freely.

The upper and lower hollow shaft 225 and 226 may be integrally provided with an ejection line extending outward from the upper and lower covers to expel the spent reaction gas that has stopped in the reaction chamber 220 to react. However, this is not a restriction, but there may be a separate exhaust pipe.

The upper and the lower susceptor 221 and 222 are on their surfaces each with disc-like depressions 221a and 222a provided so that wafers 2 , on which is to be deposited, be placed, and arranged so that in the depressions 221a and 222a placed wafers are arranged opposite to each other.

Here is the upper susceptor 221 with a variety of elastic wires 224 provided to prevent that in the recess 221a laid-up wafers are released from this, with a fixed end of the elastic wire to the upper susceptor 221 is fixed and the other, free end of the elastic wire is deformed so that it is bent and elastically comes into contact with the surface of the wafer.

Such are the wafers 2 in the wells 221a respectively. 222a of the upper and lower susceptors 221 and 222 are placed so arranged that their tops, ie the Abscheideflächen, are arranged opposite each other with a uniform distance.

The heating unit 230 generates radiant heat for the upper and lower susceptor 221 and 222 to heat the wafers placed on the susceptors, and includes upper and lower heaters 231 and 232 ,

The upper heater 231 is an electrical heating element that is between the inner ceiling surface of the top cover 211 and the upper susceptor 221 is arranged to generate heat when current is applied, and the lower heater 232 is an electric heating element between the inner bottom surface of the lower cover 212 and the lower susceptor 222 is arranged so that it generates heat at a constant temperature when current is applied.

The upper and lower heater 231 and 232 are preferably at the areas that are the upper and the lower susceptor 221 and 222 correspond, arranged adjacent to their surfaces.

The top and bottom covers 211 and 212 are with an upper or a lower temperature sensor 234 and 235 provided with probe rods of the same to the outer surface of the upper and the lower susceptor 221 and 222 or the upper and lower heaters 231 and 232 are arranged adjacent to measure heating temperature.

Thereby the upper and the lower heating device become 231 and 232 independently controlled to the upper and the lower susceptor 221 and 222 to heat to the same temperature or different temperatures.

The rotary drive unit 240 is a unit with the power to rotate the upper and lower susceptors 221 and 222 in one direction around the upper and lower hollow shafts 225 and 226 is provided around, in the upper and the lower cover 211 and 212 available. The rotary drive unit includes an upper and a lower rotary motor 241 and 242 , the drive shafts 243 respectively. 244 have on their front sides each driving gears, with driven gears 245 respectively. 246 are engaged on the outer peripheral surfaces of the upper and lower susceptor 221 and 222 available.

Here are the upper and lower rotary motor 241 and 242 Motor elements fixed to the outer surface of the upper and lower cover 211 and 212 are attached and their drive shafts 243 and 244 so they are present through the top and bottom covers 211 and 212 pass.

Preferably, the upper and lower rotors rotate 241 and 242 when current is applied, the upper and lower susceptors 221 and 222 , which are opposed to each other, in the same direction and at the same speed around the upper and the lower hollow shaft 225 and 226 around.

The gas ejection unit 250 the spent reaction gas expels outward, which reacts by contact with the opposing surfaces of the wafers 2 for forming the growth layers on the tops of the wafers 2 has completed.

The gas ejection unit 250 contains hollow gas pipes 251 and 252 extending from the upper and lower hollow shaft 225 and 226 beyond the outer surface of the upper and lower cover 211 and 212 extend to a certain length.

Although the exhaust pipes 251 and 251 may be a hollow element extending to a certain length continuously from the upper and lower hollow shaft 225 and 226 This is not limiting. Alternatively, the exhaust pipes may 251 and 252 be a hollow member of a certain length, at an outlet end of the upper and the lower 225 and 226 is mounted.

The gas supply unit 260 is a unit with the reaction gas in a gas flow path from the outer edge to the center of the reaction chamber between the opposing surfaces of the upper and lower susceptor 221 and 222 is supplied.

The gas supply unit 260 is with a ring-like insert element 261 attached to the outer perimeter of the upper and lower covers 211 and 212 is disposed adjacent, with an air supply port 262 in the insert element 261 is present and to the inside of the reaction chamber 210 is open, as well as with a Gaszuführanschluss 264 provided with the air supply connection 262 via an air supply line 263 connected is.

Here is a feed position of the reaction gas, via the air supply port 262 is supplied, which is exposed to the inside of the reaction chamber, preferably substantially identical to the center position of a vertical distance between the upper and the lower susceptor 221 and 222 ,

The reaction gas coming from the gas supply port 264 is provided, so over the outer edge to the center of the reaction chamber 210 via the air supply connection 262 of the insert element 261 fed.

So are when the top cover 211 that with the rotary arm 271 is connected by the opening operation of the cover rotation unit 270 in the drawing relative to the fixed lower cover 212 is rotated counterclockwise, the upper and lower susceptor 221 and 222 in the upper and lower covers 211 and 212 are present, open to the outside.

In this state, the wafers 2 in which to be deposited, in the corresponding wells 221a and 222a hung up on the upper and the lower susceptor 221 and 222 are formed.

It is because of the upper susceptor 221 applied wafers 2 can fall down by its weight, the elastic wire 224 whose fixed end is at the upper susceptor 221 is attached, so that the other, free end of the same in elastic contact with the surface of the wafer 2 is brought.

After completing the application of the wafer 2 be when the top cover 211 that with the rotary arm 271 connected by the closing operation of the cover rotary unit 270 in the drawing relative to the fixed lower cover 212 Turned clockwise, the top and bottom covers 211 and 212 , as in 6 represented by means of the ring-like insert element 261 , which is disposed adjacent to the outer periphery of the same, connected to each other and thus form a closed interior with a certain size between the upper and the lower cover 211 and 212 and the insert element 261 ,

Along with this, power is supplied to the upper and lower heaters 231 and 232 applied to the upper and the lower susceptor 221 and 222 to heat with radiant heat and so the wafers placed on it 2 to a temperature range between 700 ° C and 1200 ° C to heat.

Furthermore, when power is applied to the upper and lower rotors 241 and 242 is applied in the upper and lower cover 211 and 212 are present, so as the respective drive shafts 243 and 244 to rotate, the upper and lower susceptor 221 and 222 by the gear meshing between the driving gears (not shown) integrally or separately at the respective ends of the drive shafts 243 and 244 are present, and the driven gears 245 and 246 located on the outer perimeter of the upper and lower susceptors 221 and 222 are present, the upper and the lower susceptor 221 and 222 in the same direction around the upper and lower hollow shaft 225 and 226 turned around.

In this state, the reaction gas forms the air supply port 262 that with the air supply line 263 connected via the gas supply port 264 is fed, as in 8th is shown, a reaction gas stream C, from the outer edge to the center of the reaction chamber 210 flows towards.

The reaction gas stream C is via a gas flow path between the upper and the lower susceptor 221 and 222 is formed, to the gas ejection unit 250 pushed out. The laying surfaces of the upper and lower susceptors correspond 221 and 222 the ceiling surface or the bottom surface of the gas flow path.

The upper and the lower susceptor 221 and 222 , which are opposite each other, are here by the upper and lower heater 231 and 232 heated to the same temperature so that there is no temperature difference between them. Thus, the occurrence of thermal convection due to a temperature difference between the ceiling surface and the bottom surface of the gas flow path is substantially prevented, and stable gas supply regardless of a gas flow velocity or a shape of a nozzle is enabled.

Thus, the reaction gas passes through the upper and lower susceptors 221 and 222 flows opposite each other, its chemical deposition reaction with the tops of the wafers 2 on which is to be deposited so that homogeneous growth layers are formed on the surfaces of the wafer. Then, the spent reaction gas that has completed its reaction, together with a by-product on the upper and the lower hollow shaft 225 and 226 and the associated exhaust pipes 251 and 252 pushed out.

According to the Invention thus becomes a current even in a high-temperature environment from reaction gas stable to a laminar flow and wafers are on heated the same temperature, so that at the same time homogeneity and crystallization of the growth layer, and further on wafers, which are arranged opposite each other, simultaneously is grown to form growth layers, whereby the efficient use of an organometallic source material is improved.

Although the present invention has been illustrated and described in connection with the exemplary embodiments, it will be obvious to those skilled in the art that changes and changes may be made without departing from the spirit and scope of the invention as defined by the appended claims.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• - KR 2007-129715 [0001]

Claims (19)

Device for organometallic vapor deposition (Metal Organic Chemical Vapor Deposition - MOCVD), the includes: a reaction chamber with a top cover and a lower cover that has an interior with a specific Forming size when connected together; a Wafer laying unit with an upper and a lower susceptor, rotatably mounted on an upper and a lower hollow shaft are present on the top and bottom covers at least one or more wafers on opposite one another Apply surfaces of the upper and lower susceptors; a Heating unit with an upper heater, which is located between the upper Cover and the upper susceptor is present, and a lower Heating device between the lower cover and the lower Susceptor is present; a rotary drive unit, the force for rotating the upper and lower susceptors around the upper and lower susceptors providing the lower hollow shaft; a gas supply unit with an upper and a lower gas supply connection, which are connected to the upper and lower hollow shaft to Reaction gas between the opposing surfaces of the upper and lower susceptors via a central To supply gas supply nozzle with the upper and lower hollow shaft is connected; and a gas ejection unit, to an outer periphery of the upper and the lower cover is arranged adjacent to and with the interior of the reaction chamber is connected so as to expel the reaction gas to the outside. MOCVD device according to claim 1, wherein the reaction chamber further provided on one side with a cover rotary section is a pivot arm whose one end with the top or the lower cover is connected, and a stationary one Arm contains, whose upper end over a drive shaft connected to the rotary arm. The MOCVD device of claim 1, wherein the upper Susceptor provided with a variety of elastic wires is one whose fixed end attached to the upper susceptor and whose other, free end is deformed so that it is bent and elastically in contact with the surface of the wafer is. The MOCVD device of claim 1, wherein the upper and the lower heater independently so be controlled that they are the upper and the lower susceptor to a same temperature or different temperatures. MOCVD device according to claim 1, wherein the rotary drive unit includes an upper and a lower rotary motor, respectively Have drive shafts, each driving on their front sides Gears have those with driven gears are engaged on the outer peripheral surfaces of the upper and lower susceptors are present. The MOCVD device of claim 5, wherein the upper and the lower rotary motor, the upper and the lower susceptor in same direction and rotate at the same speed. The MOCVD device of claim 1, wherein the upper and the lower cover with an upper and a lower temperature sensor are attached to the outer surfaces of the upper and the lower susceptor or the upper and lower heaters are arranged adjacent to measure the heating temperature. The MOCVD apparatus of claim 1, wherein a feed position the reaction gas through the central Gaszuführdüse is fed into the reaction chamber, identical to the Middle position of a vertical distance between the upper and the lower susceptor. The MOCVD apparatus according to claim 1, wherein the gas ejection unit with a ring-like insert element attached to the upper and the lower Cover is disposed adjacent, with a discharge port, which is present on the insert element so that it leads to the interior the reaction chamber is open, and with an exhaust pipe is provided, which is connected to the discharge port. An apparatus for Metal Organic Chemical Vapor Deposition (MOCVD), comprising: a reaction chamber having a top cover and a bottom cover that form an interior of a certain size when joined together; a wafer layup unit having upper and lower susceptors rotatably mounted on upper and lower hollow shafts respectively provided on the upper and lower covers to connect at least one or more wafers to opposing surfaces of the upper and lower susceptors hang up lower susceptor; a heating unit having an upper heater provided between the upper cover and the upper susceptor and a lower heater provided between the lower cover and the lower susceptor; a rotary drive unit providing force for rotating the upper and lower susceptors around the upper and lower hollow shafts; a gas supply unit disposed adjacent to an outer periphery of the upper and lower covers and having a gas supply port connected to the inner space of the reaction chamber for supplying reaction gas between the opposed surfaces of the upper and lower susceptors; and a gas ejection unit that discharges the reaction gas. The MOCVD apparatus of claim 10, wherein the reaction chamber further provided on one side with a cover rotary section, a rotary arm, one end of which is upper or lower Cover is connected, and contains a stationary arm, its upper end via a propeller shaft with the rotary arm connected is. The MOCVD device of claim 10, wherein the upper Susceptor provided with a variety of elastic wires is one whose fixed end attached to the upper susceptor and whose other free end is deformed so that it is bent and elastically in contact with the surface of the wafer is. The MOCVD device of claim 10, wherein the upper and the lower heater independently so be controlled so that they are the upper and the lower sus susceptor to a same temperature or different temperatures. MOCVD device according to claim 10, wherein the rotary drive unit includes an upper and a lower rotary motor, respectively Have drive shafts, each driving on their front sides Gears have those with driven gears are engaged on the outer peripheral surfaces of the upper and lower susceptors are present. The MOCVD device of claim 14, wherein the upper and the lower rotary motor, the upper and the lower susceptor in same direction and rotate at the same speed. The MOCVD device of claim 10, wherein the upper and the lower cover with an upper and a lower temperature sensor are attached to the outer surfaces of the upper and the lower susceptor or the upper and lower heaters are arranged adjacent to measure a heating temperature. MOCVD apparatus according to claim 10, wherein the gas supply unit with a ring-like insert element attached to the upper and the lower Cover is disposed adjacent, an air supply port, which is present on the insert element and to the interior of the reaction chamber is open, and is provided with a gas supply port, the with the air supply connection via an air supply line connected is. MOCVD apparatus according to claim 10, wherein a feed position of the reaction gas, via the air supply port is fed, identical to the center position of a vertical distance between the upper and the lower susceptor is. The MOCVD apparatus of claim 10, wherein the gas ejection unit includes an exhaust pipe extending from skipping the upper and lower hollow shaft beyond the upper and lower cover extends to a certain length, or an ejection line includes, at the omission of the upper and lower hollow shaft is mounted.