JP2009147308A - Metal organic chemical vapor deposition device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal organic chemical vapor deposition device which can fundamentally suppress occurrence of thermal convection flow caused by a difference of higher and lower temperatures in a chamber. <P>SOLUTION: The device includes: a reaction chamber 110; heating sections 131, 132 provided with upper and lower susceptors 121, 122 in upper and lower covers 111, 112, and arranged between the upper cover 111 and the upper susceptor 121, and between the lower cover 112 and the lower susceptor 122, respectively; a rotation drive section 140 which supplies energy for rotating the upper and lower susceptors 121, 122 in one direction around upper and lower hollow shafts as a rotation center; a gas supply section 150 which supplies reaction gas to a space between corresponding surfaces of the upper and lower susceptors 121, 122 opposed to each other by means of a central gas supply nozzle 153 coupled to the upper and lower hollow shafts and connecting those hollow shafts; and a gas evacuation section 160 which is disposed in contact with outer frames of the upper and lower covers 111, 112 and connected to the inner space of the reaction chamber 110 and evacuates reaction gas after completion of the reaction with a wafer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a metal organic chemical vapor deposition apparatus improved so that a growth layer can be simultaneously formed on vapor deposition surfaces of wafers arranged to face each other.

  In general, chemical vapor deposition (CVD) is used as a main method for growing various crystal films on various substrates, which is grown as compared with the liquid phase growth method. Although the quality of the crystal is excellent, there is a disadvantage that the crystal growth rate is slow. In order to overcome this, a method of simultaneously growing on a plurality of substrates in one growth cycle has been widely adopted.

  Recently, metal organic chemical vapor deposition (MOCVD) is in the spotlight among the CVD technologies for semiconductor element miniaturization, high efficiency, and high power LED development. One of chemical vapor deposition methods (CVD) is a compound semiconductor vapor deposition method in which a metal compound is deposited and deposited on a semiconductor substrate using a pyrolysis reaction of an organic metal.

  FIG. 1 is a block diagram illustrating a general metal organic chemical vapor deposition apparatus. Such an apparatus 10 has a chamber 11 having an internal space of a certain size and a number of wafers 2 to be deposited. A susceptor 12 having a pocket 12a, a heater 13 disposed below the susceptor 12 to provide heat, a rotary motor 17 having a drive shaft 17a connected to the susceptor 12 and providing rotational power. The gas inlet 14 for supplying the reaction gas to the inside of the chamber 11 and the gas exhaust port 15 for discharging the waste reaction gas after the reaction is discharged.

  In the apparatus 10, a nozzle 16 provided at a lower end of the gas inlet 14 is disposed in the center of the chamber, and a source gas which is a reaction gas through a nozzle hole 16 a of the nozzle 16, and A carrier gas is supplied to the center inside the chamber 11.

  Such a reactive gas contacts the upper surface of the wafer 2 loaded on the susceptor 12, and at the same time, the wafer 2 is heated at a high temperature through the susceptor 12 heated by the radiant heat provided from the heater 13. As a result, the reactant gas forms a nitride growth layer on the surface of the wafer 2 while performing a chemical vapor deposition reaction on the upper surface, which is the vapor deposition surface of the wafer 2 at a high temperature. At the same time, it is discharged outside through the exhaust port 15.

  However, in the conventional metal organic chemical vapor deposition apparatus, particularly when an InGaN-based growth layer is formed, the growth temperature is usually as high as about 700 to 800 ° C., and the growth surface which is the upper surface of the wafer 2 and the chamber 11 are formed. Because of the large temperature difference between the ceiling surfaces, a tropical flow A in which the reaction gas rises upward is generated inside the chamber 11, which causes the composition of the growth layer to become nonuniform or facilitates the chemical vapor deposition reaction. No longer.

  Further, when the growth temperature is as high as 1000 ° C., the tropical flow A inside the chamber 11 becomes more intense, and the GaN film quality becomes non-uniform due to nitrogen desorption, or the Mg doping profile (Doping Profile during GaN: Mg growth). ) Causes non-uniformity.

  Thus, conventionally, in order to solve such a problem, the flow rate of the reaction gas is increased, or the method of supplying the reaction gas is changed to solve the nonuniformity of the growth layer formed on the wafer. However, such a method has a problem that if the growth pressure, the reaction gas supply ratio, and the shape of the reaction gas supply nozzle are changed, the uniformity of the composition of the growth film tends to be lost and the process window is narrowed. It was.

  In addition, regarding the flow rate of the reaction gas, for example, even if uniform conditions are obtained at 0.5 m / s and 200 Torr, the reaction gas flow rate decreases to 0.25 m / s when the reaction gas supply pressure is 400 Torr. In some cases, the composition uniformity of the grown film was disturbed.

  However, in order to maintain the same flow rate, it is necessary to double the flow rate or to halve the distance between the upper surface of the susceptor 12 and the ceiling surface of the chamber 11, and MFC (Mass Flow Controller) is set in advance. It is complicated because it requires a large flow rate or requires hardware changes.

  When the method of supplying the reaction gas is improved to ensure the uniformity of the growth layer, organic metal (MO) is usually used as the group 3 gas for AlInGaN growth, and NH3 as the group 5 gas. N2 and H2 are used as the carrier gas (Carrier Gas), but the composition uniformity of the Group 3 gas is often disturbed when the ratio of NH3 having a relatively high flow rate is changed. The process window for achieving both uniformity and uniformity is limited.

  This phenomenon can be attributed mainly to the tropical current generated inside the chamber, and by designing a reactor that is unlikely to generate tropical current, a wide process window that facilitates ensuring uniformity ( A reactor having a Process Window) can be obtained.

  Accordingly, the present invention has been devised to solve the above-mentioned problems, and its purpose is a metal organic chemical vapor phase that fundamentally suppresses the generation of tropical currents due to the temperature difference inside the chamber during the chemical vapor deposition reaction. It is to provide a vapor deposition apparatus.

  Another object of the present invention is to provide a metal organic chemical vapor deposition apparatus that stably forms a flow of a reaction gas in a laminar flow even in a high temperature environment and heats a wafer at the same temperature.

  Still another object of the present invention is to provide a metal organic chemical vapor deposition apparatus that increases the utilization efficiency of an organic metal raw material while simultaneously forming a growth layer on wafers arranged to face each other. .

  As a concrete technical means for achieving the above object, the present invention comprises an upper lid opened at the lower part and a lower lid opened at the upper part to form a fixed internal space when the upper and lower parts are combined. A reaction chamber, and an upper and lower lid, and a lower hollow shaft that is rotatably assembled to each other, a lower susceptor and an opposing upper surface, and at least one wafer disposed on a corresponding surface of the lower susceptor. A wafer placement unit, an upper heater provided between the upper lid and the upper susceptor, and a lower heater provided between the lower lid and the sub susceptor. A rotation drive unit that provides power to rotate; a central gas supply nozzle that is connected to the upper and lower hollow shafts and includes a lower gas supply port; and connects between the upper and lower hollow shafts. And a gas supply unit for supplying a reaction gas between corresponding surfaces of the lower susceptor, and an outer frame of the upper and lower lids. There is provided a metal organic chemical vapor deposition apparatus including a gas exhaust unit for discharging to the outside.

  Preferably, a side of the reaction chamber further includes a lid rotation unit, and the lid rotation unit includes a rotation arm connected to one end of the upper lid or the lower lid, The rotating arm includes a fixed arm whose upper end is connected via a hinge shaft.

  Preferably, the upper susceptor includes a plurality of elastic wires that are fixed to one end of the upper susceptor and bent and deformed so that a free end that is the other end is in elastic contact with the surface of the wafer.

  Preferably, the upper and lower heaters are independently controlled to heat the upper and lower susceptors at the same temperature or at different temperatures.

  Preferably, the rotational drive unit is formed on an outer peripheral surface of the lower susceptor, and an upper rotary motor having a drive shaft mounted on a tip thereof with a driven gear meshed with a driven gear formed on the outer peripheral surface of the upper susceptor. A lower rotary motor having a drive shaft with a driven gear fitted to the tip of the driven gear.

  More preferably, the upper and lower rotary motors rotate the upper and lower susceptors in the same direction and at the same speed.

  Preferably, the upper lid and the lower lid are arranged so as to be close to the outer surface of the upper and lower susceptors or the upper and lower heaters, respectively, and are provided with lower temperature sensors.

  Preferably, the supply position of the reaction gas supplied from the central gas supply nozzle into the reaction chamber coincides with the center of the vertical distance between the upper and lower susceptors.

  Preferably, the gas exhaust port is a ring-type insertion member disposed so as to contact the outer frame of the upper and lower lids, and an exhaust port provided in the insertion member so as to be opened to the inner space side of the reaction chamber; An exhaust line connected to the exhaust port is included.

  The present invention also includes a reaction chamber that includes an upper lid that is open at the bottom and a lower lid that is open at the top, and forms an internal space of a certain size when the upper and lower molds are combined, and the upper and lower lids. The upper and lower hollow shafts are each rotatably assembled, the lower susceptor is provided, the wafer placement portion is arranged so that at least one wafer is placed on the opposing upper susceptor, and the upper lid and the upper susceptor. An upper heater provided in between, a lower heater provided between the lower lid and the lower susceptor, and a rotary drive unit that provides power for rotating the upper susceptor around the upper and lower hollow shafts; and The gas supply port is arranged so as to contact the outer frame of the upper and lower lids and is connected to the internal space of the reaction chamber. The reaction gas is supplied between the opposing surfaces of the upper and lower susceptors. Including a gas supply unit configured to provide a gas exhaust unit that is provided with an exhaust unit at either the upper part or the lower part, or (or both), and that exhausts the reaction gas from the central part of the chamber. An organic chemical vapor deposition apparatus is provided.

  Preferably, a side of the reaction chamber further includes a lid rotation unit, and the lid rotation unit includes a rotation arm connected to one end of the upper lid or the lower lid, The rotating arm includes a fixed arm whose upper end is connected via a hinge shaft.

  Preferably, the upper susceptor includes a plurality of elastic wires that are fixed to one end of the upper susceptor and bent and deformed so that a free end that is the other end is in elastic contact with the surface of the wafer.

  Preferably, the upper and lower heaters are independently controlled to heat the upper and lower susceptors at the same temperature or at different temperatures.

  Preferably, the rotational drive unit is formed on an outer peripheral surface of the lower susceptor, and an upper rotary motor having a drive shaft mounted on a tip thereof with a driven gear meshed with a driven gear formed on the outer peripheral surface of the upper susceptor. A lower rotary motor having a drive shaft with a driven gear fitted to the tip of the driven gear.

  More preferably, the upper and lower rotary motors rotate the upper and lower susceptors in the same direction and at the same speed.

  Preferably, the upper lid and the lower lid are arranged so as to be close to the outer surface of the upper and lower susceptors or the upper and lower heaters, respectively, and are provided with lower temperature sensors.

  Preferably, the gas supply unit includes a ring-type insertion member disposed so as to be in contact with the outer frame of the upper and lower lids, and an air supply port provided in the insertion member so as to be opened to the inner space side of the reaction chamber; A gas supply port connected via the supply port and the supply line is included.

  More preferably, the supply position of the reaction gas supplied from the air supply port coincides with the center of the vertical interval between the upper and lower susceptors.

  Preferably, the gas exhaust port is provided with an exhaust line extending a certain length from the upper and lower hollow shaft outlet ends to the outside of the upper and lower lids, or is assembled to the upper and lower hollow shaft outlet ends. Provided in the exhaust line.

  According to the present invention having the above-described configuration, the reaction gas is supplied from the center of the reaction chamber in a state where the wafer is opposed to the inside of the reaction chamber composed of the lower lid and is opened and closed so as to be opened and closed. By forming a gas flow path that is exhausted to the center of the chamber or by forming a gas flow path that is supplied from the outer periphery of the reaction chamber and exhausted to the center, a chemical vapor deposition reaction causes an upper and lower temperature difference inside the chamber. The generation of a tropical current can be fundamentally suppressed, and a uniform growth layer can be deposited to produce an excellent quality deposited wafer.

  In addition, the reaction gas flow can be stably formed in a laminar flow even in a high-temperature environment inside the reaction chamber, and the wafer can be heated at the same temperature to simultaneously satisfy the uniformity and crystallinity of the growth layer. The use efficiency of the organometallic raw material can be increased by simultaneously forming a growth layer on the formed wafer.

  Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 2 is a cross-sectional view illustrating a state in which the metal organic chemical vapor deposition apparatus according to the first embodiment of the present invention is closed, and FIG. 3 illustrates that the metal organic chemical vapor deposition apparatus according to the first embodiment of the present invention is opened. 4 is a state diagram illustrating the supply and exhaust flow of the reaction gas in the first embodiment of the metal organic chemical vapor deposition apparatus according to the present invention, and FIG. It is the top view which looked at the state cut | disconnected according to the line from the upper part.

  The apparatus 100 according to the first embodiment of the present invention can simultaneously deposit a growth layer on the surface of a wafer 2 arranged to face each other, as shown in FIGS. , The wafer placement unit 120, the heating unit 130, the rotation driving unit 140, the gas supply unit 150, and the gas exhaust unit 160.

  The reaction chamber 110 includes an upper lid 111 and a lower lid 112, and forms an internal space of a certain size when the upper and lower sides are combined. The upper lid 111 is opened to the lower side, and a heat insulating material 113 is formed on the inner ceiling surface 111a. It is an upper structure provided with.

  The lower lid 112 is a lower structure that is open to the top and includes a heat insulating material 114 on the inner bottom surface 112a.

In addition, the upper and lower lids 111 and 112 preferably include cooling water lines 115 and 116, respectively, in which a fluid such as cooling water flows in one direction inside the body so that the body can be cooled.

  Further, one side of the reaction chamber 110 may be provided with a lid rotating unit 170 that rotates either the upper lid 111 or the lower lid 112 and separates or molds them. The lid rotation unit 170 includes a rotation arm 171 to which one end of the upper lid 111 is connected, and a fixed arm 173 to which the rotation arm 171 and the upper end are connected via a hinge shaft 172. .

  Here, the pivot arm 171 is connected to the upper lid 111 and pivoted with respect to the lower lid, and the lower lid 111 and 112 are combined and separated. It is not limited.

  The wafer placement unit 120 includes an upper susceptor 121 and a lower susceptor 122, and the upper susceptor 121 is disposed inside the upper lid 111 and is rotatable about an upper hollow shaft 125 disposed at the center of the upper lid 111. Assembled into.

  The lower susceptor 122 is disposed inside the lower lid 112 and is rotatably assembled to a lower hollow shaft 126 disposed at the center of the lower lid 112.

  The upper and lower hollow shafts 125 and 126 have a rotating support member such as a bearing member or a bush disposed in a central assembly hole 121b and 122b formed through the middle of the upper and lower susceptors 121 and 122. (Not shown) is assembled to be rotatable.

  The upper and lower hollow shafts 125 and 126 are made of hollow pipe members so that the reaction gas can freely flow.

  The upper and lower susceptors 121 and 122 are provided with disk-shaped pockets 121a and 122a that are recessed so that the wafer 2 to be deposited can be loaded. , 122 are arranged so that the wafers 2 loaded in the pockets 121a, 122a face each other.

  Here, the upper susceptor 121 is provided with a plurality of elastic wires 124 so that the wafer 2 loaded in the pocket 121a is not easily detached from the outside, and the elastic wire 124 is fixed to the upper susceptor 121 at a fixed end. The wire member is bent and deformed so that the free end as the other end is in elastic contact with the surface of the wafer.

  As a result, the wafer 2 loaded in the pocket 121a of the upper susceptor 121 and the wafer 2 provided in the pocket 122a of the lower susceptor 122 are arranged so that the upper surface of the vapor deposition surface faces each other at a predetermined interval.

  The heating unit 130 provides radiant heat to the upper and lower susceptors 121 and 122 and heats the wafer 2 loaded thereon. The heating unit 130 includes an upper heater 131 and a lower heater 132.

  The upper heater 131 is an electric heating member that is provided between the inner ceiling surface of the upper lid 111 and the upper susceptor 121 and generates heat when power is applied. The lower heater 132 is an inner bottom surface of the lower lid 112 and the lower portion. It is an electric heating member that generates heat at a constant temperature when a power supply is provided between the susceptors 122.

  The upper and lower heaters 131 and 132 are preferably disposed in a region corresponding to the upper and lower susceptors 121 and 122 so as to be close to the surfaces of the upper and lower susceptors 121 and 122.

  In addition, the upper lid 111 and the lower lid 112 are arranged so that a probe bar is arranged on the outer surface of the upper and lower susceptors 121 and 122 or close to the upper and lower heaters 131 and 132, respectively. Lower temperature sensors 134 and 135 are provided, respectively.

  Here, the upper heater 131 and the lower heater 132 are independently controlled to heat the upper and lower susceptors 121 and 122 at the same temperature or at different temperatures.

  The rotation driving unit 140 is provided on the upper and lower lids 111 and 112, and provides power for rotating the upper and lower susceptors 121 and 122 in one direction around the lower hollow shafts 125 and 126 as rotation centers. This includes an upper rotary motor 141 and a lower rotary motor 142, and the upper rotary motor 141 has a driving gear mounted at the tip thereof and a driven gear 145 formed on the outer peripheral surface of the upper susceptor 121. A shaft 143 is provided.

  The lower rotary motor 142 includes a drive shaft 144 having a driven gear 146 formed on the outer peripheral surface of the lower susceptor 122 and a drive gear engaged with the gear mounted at the tip.

  Here, the upper and lower rotary motors 141 and 142 are fixedly installed on the outer surfaces of the upper and lower lids 111 and 112, and the drive shafts 143 and 144 penetrate the upper and lower lids 111 and 112. It is a motor member arranged.

  The upper and lower rotary motors 141 and 142 are opposed to each other with the upper and lower hollow shafts 125 and 126 as rotation centers when power is applied, and the lower susceptors 121 and 122 are driven to rotate in the same direction and at the same rotational speed. preferable.

  The gas supply unit 150 is opposed to each other and supplies a reaction gas between the corresponding surfaces of the lower susceptors 121 and 122 so as to form a gas flow in which the reaction gas flows from the center of the reaction chamber to the outer peripheral side.

  The gas supply unit 150 is connected to the upper and lower hollow shafts 125 and 126, and has lower gas supply ports 151 and 152, which are connected between the upper and lower hollow shafts 125 and 126. A central gas supply nozzle 153 is provided.

  The central gas supply nozzle 153 includes a plurality of nozzle holes 154 for discharging the reaction gas supplied from the upper and lower gas supply ports 151 and 152 to the outside.

  Here, it is preferable that the supply position of the reaction gas supplied from the central gas supply nozzle 153 substantially coincides with the center of the vertical interval between the upper and lower susceptors 121 and 122.

  The central gas supply nozzle 153 is illustrated and described as being fixed to the upper end of the lower hollow shaft 126, but is not limited thereto, and may be fixed to the lower end of the upper hollow shaft 125. it can.

  The central gas supply nozzle 153 is illustrated and described as a hollow member having an outer diameter larger than the outer diameter of the upper and lower hollow shafts 125 and 126, but is not limited thereto, and the upper and lower hollow shafts are not limited thereto. The outer diameters of 125 and 126 may be the same as or smaller than the outer diameter.

  The gas exhaust 160 is supplied to the inner center of the reaction chamber 110 and the reaction is completed so as to form a growth layer on the upper surface of the wafer 2 while being in contact with the surface of the wafer 2 disposed to face the center. Waste reaction gas is discharged to the outside.

  The gas exhaust unit 160 includes a ring-shaped insertion member 161 disposed so as to contact the outer frames of the upper and lower lids 111 and 112, and the insertion member 161 so as to open to the inner space side of the reaction chamber. An exhaust port 162 provided and an exhaust line 163 connected to the exhaust port 162 are provided.

  Accordingly, as shown in FIG. 3, the upper lid 111 connected to the pivot arm 171 by the opening operation of the lid pivot section 170 is counterclockwise on the drawing with respect to the lower lid 112 where the position is fixed. By rotating in the direction, the upper and lower susceptors 121 and 122 provided on the upper and lower lids 111 and 112 are opened to the outside.

  In such a state, the wafer 2 as a deposition target is inserted and arranged in each of the plurality of pockets 121a and 122a formed in the upper and lower susceptors 121 and 122, respectively.

  At this time, since the wafer 2 loaded on the upper susceptor 121 can be detached by its own weight toward the lower part, it is the other end of the elastic wire 124 to which the fixed end which is one end is fixed to the upper susceptor 121. The free end is brought into elastic contact with the surface of the wafer 2.

  When the loading of the wafer 2 is completed, the upper lid 111 connected to the pivot arm 171 is moved in the clockwise direction in the drawing relative to the lower lid 112 whose position is fixed by the closing operation of the lid pivot unit 170. By rotating, the upper and lower lids 111 and 112 are combined with each other via a ring-shaped insertion member 161 arranged so as to be in contact with the outer frame thereof, whereby the upper and lower lids 111 and 112 are inserted. An internal space of a fixed size is formed between the members 161.

At the same time, by applying power to the upper and lower heaters 131 and 132, the upper and lower susceptors 121 and 122 are heated by radiant heat, and the wafer 2 loaded thereon is heated at 700 to 1200 °.

  When power is applied to the upper rotary motors 141 and 142 provided on the upper and lower lids 111 and 112 and the drive shafts 143 and 144 are rotated, each end of the drive shafts 143 and 144 is applied to each end. By combining a drive gear (not shown) that is provided integrally or separately assembled with the above-mentioned gears between driven gears 145 and 146 provided on the outer peripheral side edges of the lower susceptors 121 and 122, the above, The lower susceptors 121 and 122 are rotated in the same direction around the upper and lower hollow shafts 125 and 126 as rotation centers.

  In this state, the reaction gas supplied through the upper and lower gas supply ports 151 and 152 is supplied through the upper and lower hollow shafts 125 and 126 to the central gas supply nozzle 153 provided therebetween, The reaction gas supplied through the nozzle hole 154 of the gas supply nozzle 153 forms a reaction gas flow B that flows from the inner center of the reaction chamber 110 to the outer peripheral side, as shown in FIG.

  The reactive gas flow B is opposed and discharged to the gas exhaust part 160 through a gas flow path formed between the lower susceptors 121 and 122. The loading surface of the upper susceptor 121 is a gas flow path. It corresponds to the ceiling surface, and the loading surface of the lower susceptor 122 corresponds to the bottom surface of the gas flow path.

  At this time, the upper and lower susceptors 121 and 122 facing each other are heated at the same temperature by the upper and lower heaters 131 and 132, and there is almost no temperature difference between them. The tropical flow phenomenon generated by the difference can be fundamentally prevented, and a stable reaction gas can be supplied regardless of the gas flow velocity and the nozzle shape.

  As a result, the reaction gas passing between the upper and lower susceptors 121, 122 facing each other forms a growth layer uniformly on the surface of the wafer 2 while performing a chemical vapor deposition reaction on the upper surface, which is the vapor deposition surface of the wafer 2. The waste reaction gas after the reaction is discharged to the outside together with by-products through an exhaust port 162 provided in the insertion member 161 and an exhaust line 163 connected thereto.

  In addition, it is possible to stably form a flow of reaction gas in a laminar flow inside a reaction chamber having a high temperature environment, and heat a plurality of wafers at the same temperature to stably ensure the uniformity and crystallinity of the growth layer. In addition, the utilization efficiency of the organometallic raw material supplied while simultaneously forming the growth layer on the wafers arranged to face each other can be further increased.

  FIG. 6 is a cross-sectional view illustrating a state in which the metal organic chemical vapor deposition apparatus according to the second embodiment of the present invention is closed, and FIG. 7 illustrates that the metal organic chemical vapor deposition apparatus according to the second embodiment of the present invention is opened. FIG. 8 is a state diagram illustrating the supply and exhaust flow of the reaction gas in the metal organic chemical vapor deposition apparatus according to the second embodiment of the present invention.

  The apparatus 200 according to the second embodiment of the present invention can simultaneously deposit a growth layer on the surface of a wafer 2 arranged to face each other, as shown in FIGS. , A wafer placement unit 220, a heating unit 230, a rotation driving unit 240, a gas exhaust unit 250, and a gas supply unit 260.

  The reaction chamber 210 includes an upper lid 211 and a lower lid 212, and forms an internal space of a certain size when the upper and lower sides are combined. The upper lid 211 is opened to the lower side, and a heat insulating material 213 is provided on the inner ceiling surface 211a. It is a superstructure provided.

  The lower lid 212 is a lower structure that is open to the top and includes a heat insulating material 214 on the inner bottom surface 212a.

  In addition, it is preferable that the lower lids 211 and 212 include cooling water lines 215 and 216, respectively, in which a fluid such as cooling water flows in one direction in the body so that the body can be cooled.

  In addition, one side of the reaction chamber 210 may be provided with a lid rotation unit 270 that rotates either the upper lid 211 or the lower lid 212 and separates or molds them. The lid rotating unit 270 includes a rotating arm 271 having one end connected to the upper cover 210 and a fixed arm 273 having an upper end connected to the rotating arm 271 through a hinge shaft 272.

  Here, although the rotation arm 271 is connected to the upper lid 211 and is rotated with respect to the lower lid, the upper lid 211 and the lower lids 211 and 212 are illustrated in FIG. It is not limited to.

  The wafer placement unit 220 includes an upper susceptor 221 and a lower susceptor 222, and the upper susceptor 221 is disposed inside the upper lid 211 and is rotatable to an upper hollow shaft 225 disposed at the center of the upper lid 211. Assembled.

  The lower susceptor 222 is disposed inside the lower lid 212 and is rotatably assembled to a lower hollow shaft 226 disposed at the center of the lower lid 212.

  The upper and lower hollow shafts 225 and 226 have a rotational support member such as a bearing member or a bush disposed in a central assembly hole 221b and 222b formed through the middle of the upper and lower susceptors 221 and 222. (Not shown) is assembled to be rotatable.

  The upper and lower hollow shafts 225 and 226 are formed of hollow pipe members so that the reaction gas can freely flow.

  In addition, the upper hollow shafts 225 and 226 are integrally provided with exhaust lines 251 and 252 extending from the lower lid to the outside so as to discharge waste reaction gas that has been reacted inside the reaction chamber 210 to the outside. However, the present invention is not limited to this, and a separate exhaust line can be connected.

  The upper and lower susceptors 221 and 222 are provided with disk-shaped pockets 221a and 222a that are recessed so that the wafer 2 to be deposited can be loaded. The wafers 221 and 222 are arranged so that the wafers 2 loaded in the pockets 221a and 222a face each other.

  Here, since the upper susceptor 221 includes a plurality of elastic wires 224 so that the wafer 2 loaded in the pocket 221a is not easily detached from the outside, the elastic wire 224 is fixed to the upper susceptor 221 at one end. Is fixed, and is provided with a wire member that is bent and deformed so that the free end as the other end is in elastic contact with the surface of the wafer.

  As a result, the wafer 2 loaded in the pocket 221a of the upper susceptor 221 and the wafer 2 provided in the pocket 222a of the lower susceptor 222 are arranged so that the upper surface, which is the vapor deposition surface, faces each other at a predetermined interval.

  The heating unit 230 provides radiant heat to the upper and lower susceptors 221 and 222 to heat the wafer 2 loaded thereon, and includes an upper heater 231 and a lower heater 232.

  The upper heater 231 is an electric heating member that is provided between the inner ceiling surface of the upper lid 211 and the upper susceptor 221 and generates heat when power is applied. The lower heater 232 is an inner bottom surface of the lower lid 212 and the lower portion. It is an electric heating member that generates heat at a constant temperature when a power supply is provided, provided between the susceptors 222.

  In this manner, the lower heaters 231 and 232 are preferably disposed in a region corresponding to the upper and lower susceptors 221 and 222 so as to be close to the surfaces of the upper and lower susceptors 221 and 222.

  In addition, the upper lid 211 and the lower lid 212 are arranged so that the probe rods are arranged close to the outer surfaces of the upper and lower susceptors 221, 222, and the upper and lower heaters 231, 232, respectively. Lower temperature sensors 234 and 235 are provided, respectively.

  Here, the upper heater 231 and the lower heater 232 are independently controlled to heat the upper and lower susceptors 221 and 222 at the same temperature or at different temperatures.

  The rotation drive unit 240 is provided on the upper and lower lids 211 and 212, and provides power for rotating the upper and lower susceptors 221 and 222 in one direction around the lower hollow shafts 225 and 226 as rotation centers. Since the upper rotary motor 241 and the lower rotary motor 242 are provided, the upper rotary motor 241 has a driven gear 245 formed on the outer peripheral surface of the upper susceptor 221 and a drive gear meshed with the driving gear. A mounted drive shaft 243 is provided.

  The lower rotary motor 242 includes a drive shaft 244 with a driven gear 246 formed on the outer peripheral surface of the lower susceptor 222 and a drive gear engaged with the gear mounted at the tip.

  Here, the upper and lower rotary motors 241 and 242 are fixedly installed on the outer surfaces of the upper and lower lids 211 and 212, and the drive shafts 243 and 244 pass through the upper and lower lids 211 and 212. It is a motor member arranged.

  The upper and lower rotary motors 241 and 242 are opposed to each other with the upper and lower hollow shafts 225 and 226 as rotation centers when the power is applied, and the lower susceptors 221 and 222 are rotated in the same direction and at the same rotational speed. preferable.

  The gas exhaust unit 250 is supplied to the center of the reaction chamber 210 and is in contact with the surface of the wafer 2 disposed so as to face the waste reaction, and the reaction is completed to form a growth layer on the upper surface of the wafer 2. The gas is discharged to the outside.

  The gas exhaust unit 250 includes hollow exhaust lines 251 and 252 that extend from the upper and lower hollow shafts 225 and 226 and extend outward from the outer surfaces of the upper and lower lids 211 and 212 by a predetermined length.

  The exhaust lines 251 and 252 may be formed of a hollow member continuously extended from the upper and lower hollow shafts 225 and 226 by a certain length, but the upper and lower hollows are not limited thereto. It can also consist of a fixed length hollow member assembled at the outlet end of the shafts 225, 226 in an assembling fashion.

  The gas supply unit 260 is opposed to each other and supplies a reaction gas between the corresponding surfaces of the lower susceptors 221 and 222 so as to form a gas flow in which the reaction gas flows from the outer peripheral side of the reaction chamber to the center.

  The gas supply unit 260 includes a ring-type insertion member 261 disposed so as to contact the outer frames of the upper and lower lids 211 and 212, and the insertion member that is opened to the inner space side of the reaction chamber 210. 261 and a gas supply port 264 connected to the supply port 262 through the supply line 263.

  Here, it is preferable that the supply position of the reaction gas supplied from the air supply port 262 exposed inside the reaction chamber substantially coincides with the center of the vertical interval between the upper and lower susceptors 221 and 222.

  The reaction gas provided from the gas supply port 264 may be supplied from the outer peripheral side of the reaction chamber 210 toward the center through the air supply port 262 of the insertion member 261.

  Accordingly, as shown in FIG. 7, the upper lid 211 connected to the pivot arm 271 by the opening operation of the lid pivot section 270 is counterclockwise on the drawing with respect to the lower lid 212 where the position is fixed. By rotating in the direction, the upper and lower susceptors 221 and 222 provided on the upper and lower lids 211 and 212 are opened to the outside.

  In such a state, the wafer 2 as a deposition target is inserted and arranged in each of the plurality of pockets 221a and 222a formed in the upper and lower susceptors 221 and 222, respectively.

  At this time, since the wafer 2 loaded on the upper susceptor 221 can be detached by its own weight toward the lower part, it is the other end of the elastic wire 224 to which the fixed end which is one end is fixed to the upper susceptor 221. The free end is brought into elastic contact with the surface of the wafer 2.

  When the loading of the wafer 2 is finished, the upper lid 211 connected to the pivot arm 271 is moved clockwise in the drawing with respect to the fixed position of the upper lid 211 by the lid pivoting portion 270 closing operation. By rotating, the upper and lower lids 211 and 212 are combined with each other through a ring-shaped insertion member 261 arranged so as to contact the outer frame as shown in FIG. A sealed fixed internal space is formed between the upper and lower lids 211 and 212 and the insertion member 261.

  At the same time, the upper and lower susceptors 221 and 222 are heated by radiant heat by applying power to the upper and lower heaters 231 and 232, and the wafer 2 loaded thereon is heated at 700 to 1200 ° C.

  When the upper and lower lids 211 and 212 are provided with power applied to the lower rotary motors 241 and 242 to rotate the drive shafts 243 and 244, each end of the drive shafts 243 and 244 is rotated. A drive gear (not shown) that is provided integrally or separately assembled and a gear between driven gears 245 and 246 provided on the outer peripheral edges of the lower susceptors 221 and 222 are engaged with each other. The lower susceptors 221 and 222 are rotated in the same direction around the upper and lower hollow shafts 225 and 226 as rotation centers.

  In this state, the reaction gas supplied to the air supply port 262 connected to the air supply line 263 through the gas supply port 264 flows from the outer peripheral side of the reaction chamber 110 to the center side as shown in FIG. The reaction gas flow C flowing in the gas is formed.

  The reaction gas flow C is opposed and discharged to the gas exhaust unit 250 through a gas flow path formed between the lower susceptors 221, 222. The loading surface of the upper susceptor 221 is a gas flow path. It corresponds to the ceiling surface, and the loading surface of the lower susceptor 222 corresponds to the bottom surface of the gas flow path.

  At this time, the upper and lower susceptors 221 and 222 facing each other are heated at the same temperature by the upper and lower heaters 231 and 232, and there is almost no temperature difference between them. The tropical current phenomenon caused by the difference can be fundamentally prevented, and a stable reaction gas can be supplied regardless of the gas flow velocity and the nozzle shape.

  As a result, the reaction gas passing between the upper and lower susceptors 221 and 222 forms a growth layer uniformly on the surface of the wafer 2 while performing a chemical vapor deposition reaction on the upper surface, which is the vapor deposition surface of the wafer 2. The waste reaction gas after the reaction is disposed in the center of the reaction chamber together with by-products and is discharged through the lower hollow shafts 225 and 226 and the exhaust lines 251 and 252 connected thereto.

  In addition, the reaction gas flow is stably formed in a laminar flow inside a reaction chamber having a high temperature environment, and a plurality of wafers are heated at the same temperature, so that the uniformity and crystallinity of the growth layer can be stably secured. In addition, the utilization efficiency of the organometallic raw material supplied while simultaneously forming the growth layer on the wafers arranged to face each other can be further increased.

  While the invention has been illustrated and described with reference to specific embodiments, those skilled in the art will recognize that the invention is within the spirit and scope of the invention as defined by the following claims. Can be modified and changed in various ways.

1 is a configuration diagram illustrating a general metal organic chemical vapor deposition apparatus. 1 is a cross-sectional view showing a state where a metal organic chemical vapor deposition apparatus according to a first embodiment of the present invention is closed. 1 is a cross-sectional view illustrating a state in which a metal organic chemical vapor deposition apparatus according to a first embodiment of the present invention is open. FIG. 3 is a state diagram illustrating a supply and exhaust flow of a reactive gas in a metal organic chemical vapor deposition apparatus according to a first embodiment of the present invention. It is the top view which looked at the state cut | disconnected along the 4-4 'line | wire of FIG. 4 from the upper part. It is sectional drawing of the state by which the metal organic chemical vapor deposition apparatus by 2nd Example of this invention was closed. FIG. 6 is a cross-sectional view illustrating a state in which a metal organic chemical vapor deposition apparatus according to a second embodiment of the present invention is open. FIG. 6 is a state diagram illustrating the supply and exhaust flow of a reactive gas in a second embodiment of the metal organic chemical vapor deposition apparatus according to the present invention.

Explanation of symbols

110, 210 Reaction chamber 111, 211 Upper lid 112, 212 Lower lid 120, 220 Wafer placement unit 121, 221 Upper susceptor 122, 222 Lower susceptor 130, 230 Heating unit 131, 231 Upper heater 132, 232 Lower heater 140, 240 Rotation Drive unit 141, 241 Upper rotary motor 142, 242 Lower rotary motor 150, 260 Gas supply unit 160, 250 Gas exhaust unit

Claims (19)

A reaction chamber having an upper lid and a lower lid, and forming an internal space of a certain size when the upper and lower molds are combined;
An upper susceptor rotatably assembled to an upper hollow shaft provided in the upper lid, and a lower susceptor rotatably assembled to a lower hollow shaft provided in the lower lid, and corresponding surfaces of the opposed upper susceptor and lower susceptor A wafer placement section on which at least one or more wafers are placed,
An upper heater provided between the upper lid and the upper susceptor, and a lower heater provided between the lower lid and the lower susceptor,
A rotation drive unit that provides power for rotating the upper susceptor with the upper hollow shaft as a rotation center, and power for rotating the lower susceptor with the lower hollow shaft as a rotation center;
The upper gas supply port connected to the upper hollow shaft, or the lower gas supply port connected to the lower hollow shaft, or both the upper gas supply port and the lower gas supply port are provided, and the central gas supply A gas supply unit for supplying a reaction gas between corresponding surfaces of the upper susceptor and the lower susceptor facing each other through the nozzle;
A metal organic chemical vapor deposition apparatus that includes a gas exhaust unit that is disposed in contact with an outer frame of the upper lid and the lower lid and is connected to an internal space of the reaction chamber and exhausts a reaction gas to the outside.   One side of the reaction chamber further includes a lid rotating part, the lid rotating part being connected to one of the upper lid and the lower lid, one end connected to the rotating arm, and the rotating The metal organic chemical vapor deposition apparatus according to claim 1, further comprising a fixed arm whose upper end is connected to the arm via a hinge shaft.   The upper susceptor includes a plurality of elastic wires that are fixed to one end of the upper susceptor and bent and deformed so that a free end that is the other end is in elastic contact with the surface of the wafer. The metal organic chemical vapor deposition apparatus according to claim 1 or 2.   The upper heater and the lower heater are independently controlled so that the upper susceptor and the lower susceptor are superheated at the same temperature or at different temperatures. Metal-organic chemical vapor deposition apparatus described in 1.   The rotational drive unit is formed on an outer peripheral surface of the lower susceptor, and an upper rotary motor having a drive shaft with a drive gear meshed with a driven gear formed on the outer peripheral surface of the upper susceptor. 5. The metal organic chemical vapor deposition apparatus according to claim 1, further comprising a lower rotary motor including a drive shaft having a drive gear fitted to the tip of a driven gear and a gear engaged with the driven gear.   6. The metal organic chemical vapor deposition apparatus according to claim 5, wherein the upper rotary motor and the lower rotary motor rotate and drive the upper susceptor and the lower susceptor at the same direction and at the same speed. The upper lid includes an upper temperature sensor arranged to be close to the outer surface of the upper susceptor or the upper heater and measuring a heating temperature,
The metal according to any one of claims 1 to 6, wherein the lower lid includes a lower temperature sensor that is disposed so as to be close to an outer surface of the lower susceptor or the lower heater, and measures a heating temperature. Organic chemical vapor deposition equipment.   8. The supply position of the reaction gas supplied into the reaction chamber from the central gas supply nozzle coincides with the center of the vertical interval between the upper susceptor and the lower susceptor. A metal organic chemical vapor deposition apparatus according to claim 1.   The gas exhaust unit includes a ring-type insertion member disposed so as to contact the outer frame of the upper lid and the lower lid, an exhaust port provided in the insertion member so as to be opened to the internal space side of the reaction chamber, and The metal organic chemical vapor deposition apparatus according to claim 1, further comprising an exhaust line connected to the exhaust port. A reaction chamber having an upper lid and a lower lid, and forming an internal space of a certain size when the upper and lower molds are combined;
An upper susceptor rotatably assembled to an upper hollow shaft provided in the upper lid, and a lower susceptor rotatably assembled to a lower hollow shaft provided in the lower lid, and corresponding surfaces of the opposed upper susceptor and lower susceptor A wafer placement section on which at least one or more wafers are placed,
An upper heater provided between the upper lid and the upper susceptor, and a lower heater provided between the lower lid and the lower susceptor,
A rotational drive unit that provides power for rotating the upper susceptor around the upper hollow shaft and power for rotating the lower susceptor around the lower hollow shaft;
A gas supply port arranged to contact the outer frame of the upper lid and the lower lid, connected to the internal space of the reaction chamber, and supplying a reaction gas between corresponding surfaces of the upper susceptor and the lower susceptor facing each other. A metal organic chemical vapor deposition apparatus including a gas supply unit and a gas exhaust unit for exhausting a reaction gas from the center of the reaction chamber to the outside.   One side of the reaction chamber further includes a lid rotating part, the lid rotating part being connected to one of the upper lid and the lower lid, one end connected to the rotating arm, and the rotating The metal organic chemical vapor deposition apparatus according to claim 10, further comprising a fixed arm whose upper end is connected to the arm via a hinge shaft.   The upper susceptor includes a plurality of elastic wires that are fixed to one end of the upper susceptor and bent and deformed so that a free end that is the other end is in elastic contact with the surface of the wafer. Item 10. The metal organic chemical vapor deposition apparatus according to Item 10 or Item 11.   13. The upper heater and the lower heater are independently controlled to heat the upper susceptor and the lower susceptor at the same temperature or at different temperatures. Metal organic chemical vapor deposition equipment.   The rotational drive unit is formed on an outer peripheral surface of the lower susceptor, and an upper rotary motor having a drive shaft with a drive gear meshed with a driven gear formed on the outer peripheral surface of the upper susceptor. The metal organic chemical vapor deposition apparatus according to any one of claims 10 to 13, further comprising a lower rotary motor including a drive shaft having a drive gear fitted to the tip of a driven gear and a gear engaged with the driven gear.   The metal organic chemical vapor deposition apparatus according to claim 14, wherein the upper rotary motor and the lower rotary motor rotate and drive the upper susceptor and the lower susceptor at the same direction and at the same speed. The upper lid includes an upper temperature sensor arranged to be close to the outer surface of the upper susceptor or the upper heater and measuring a heating temperature,
The metal according to any one of claims 10 to 15, wherein the lower lid includes a lower temperature sensor arranged to be close to an outer surface of the lower susceptor or the lower heater and measuring a heating temperature. Organic chemical vapor deposition equipment.   The gas supply unit includes a ring-type insertion member disposed so as to be in contact with outer frames of the upper lid and the lower lid, an air supply port provided in the insertion member so as to be opened to the inner space side of the reaction chamber, and the The metal organic chemical vapor deposition apparatus according to any one of claims 10 to 16, further comprising a gas supply port connected to the air supply port via an air supply line.   18. The metal organic chemical vapor deposition apparatus according to claim 17, wherein a supply position of the reaction gas supplied from the air supply port coincides with a center of a vertical interval between the upper susceptor and the lower susceptor.   The gas exhaust part is composed of an exhaust line extending from the outlet end of the upper hollow shaft or the lower hollow shaft to the outside of the upper lid or the lower lid, or both of the upper hollow shaft and the lower hollow shaft. The metal organic chemical vapor deposition apparatus according to claim 10, comprising an exhaust line assembled at an outlet end.

Images