KR101504138B1 - Apparatus for depositing thin film on wafer and method for cleaning the apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus capable of in-situ cleaning and a method for cleaning the apparatus. A thin film deposition apparatus according to the present invention includes a substrate support portion rotatably installed in a reactor and provided with a plurality of substrate seating portions on which substrates are mounted. A cleaning gas supply unit installed on the upper portion of the substrate supporting unit for supplying the cleaning gas into the reactor, a plurality of source gas supply units for supplying the source gas onto the substrate supporting unit, and a plurality of source gas supply units for purging the source gas And a plurality of purge gas feeders for feeding the purge gas onto the substrate supporter, wherein the plurality of feed gas feeders and the plurality of purge gas feeders are arranged radially around the purge gas feeder.

Description

[0001] The present invention relates to a thin film deposition apparatus and a cleaning method thereof,

The present invention relates to a thin film deposition apparatus and a thin film deposition apparatus cleaning method, and more particularly, to a thin film deposition apparatus capable of depositing a thin film on a plurality of wafers in a single reactor and a cleaning method of the apparatus.

The thin film deposition apparatus is a device for depositing a thin film on a substrate. Methods for depositing a thin film on the substrate include physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic deposition layer deposition, ALD).

In the process of depositing a thin film on a substrate, unwanted thin films are deposited on the walls of the reactor, showerhead surface, susceptor surface, etc. in addition to the substrate. Particularly, in the chemical vapor deposition or atomic layer deposition, a thin film is deposited by the reaction of source gases, so that when a source gas reacts at a portion other than the substrate, a thin film is deposited inside the reactor.

When the thin film deposition process is repeated, the thin film deposited inside the reactor becomes thick, so that the thin film deposited inside the reactor is peeled off and deposited on the substrate, so that the desired thin film can not be deposited. Therefore, it is essential to clean the thin film deposition apparatus after a certain number of processes.

As a method of cleaning the thin film deposition apparatus, there is a method in which a cleaning solution is used after decomposing the apparatus, or a cleaning gas is supplied into the thin film deposition apparatus while the vacuum is not broken after the thin film deposition process to perform cleaning, that is, in- ). ≪ / RTI > Cleaning of the in-line thin film deposition apparatus is preferable to the use of the cleaning solution since it takes less time to enter the thin film deposition process after cleaning.

On the other hand, in recent years, the size of the substrate has been increased, and the size of the thin film deposition apparatus has been enlarged by using various substrates simultaneously. Therefore, a method for efficiently cleaning a large-sized thin film deposition apparatus is required.

SUMMARY OF THE INVENTION The present invention is directed to a thin film deposition apparatus that maximizes the efficiency of a cleaning gas when cleaning a thin film deposition apparatus and has a uniform cleaning rate in all regions within a reactor, and a cleaning method of the apparatus.

According to a first aspect of the present invention, there is provided a thin film deposition apparatus comprising: a reactor; A substrate supporting part rotatably installed in the reactor and provided with a plurality of substrate seating parts on which the substrates are mounted; And a cleaning gas supply unit installed on the substrate support unit for supplying a cleaning gas into the reactor, a plurality of source gas supply units for supplying the source gas onto the substrate support unit, And a plurality of purge gas feeders for feeding a purge gas for purging the source gas onto the substrate supporter, wherein the plurality of source gas feeders and the plurality of purge gas feeders are arranged in a radial manner around the purge gas feeder And a jetting portion.

According to another aspect of the present invention, there is provided a thin film deposition apparatus comprising: a reactor; A substrate supporter rotatably installed in the reactor and having a cleaning gas supply line for supplying a cleaning gas into the reactor at a central portion thereof and having a plurality of substrate seating portions on which the substrates are mounted; And a plurality of source gas supply units provided on the substrate supporter for supplying the source gas onto the substrate supporter and a purge gas disposed between the plurality of source gas supply units and purging the source gas, And a plurality of purge gas supply units arranged radially with respect to a position corresponding to a central portion of the substrate supporting unit.

According to an aspect of the present invention, there is provided a method of cleaning a thin film deposition apparatus, including: mounting a substrate on a substrate support; Depositing a thin film on the substrate; Discharging the substrate on which the thin film is deposited to the outside of the reactor; And cleaning the inside of the reactor by supplying the cleaning gas into the reactor in-situ.

According to the present invention, since the activated cleaning gas is supplied through the central portion of the gas ejecting portion or the substrate supporting portion, the efficiency of the cleaning gas is maximized. Further, an exhaust port is formed on the upper and lower sides of the reactor, so that the cleaning gas can be effectively cleaned not only in the lower portion of the reactor but also the upper portion of the reactor and the surface of the gas injection portion. Therefore, when the thin film deposition apparatus is cleaned in situ, uniform cleaning speed can be obtained in all the regions inside the reactor, thereby increasing productivity and improving the productivity.

Hereinafter, preferred embodiments of the thin film deposition apparatus and the cleaning method of the apparatus according to the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. It is provided to let you know.

2 is a cross-sectional view taken along the line II-II in Fig. 1, and Fig. 3 is a cross-sectional view taken along the line III-III in Fig. 1 .

1 to 3, a thin film deposition apparatus 100 according to the first embodiment includes a reactor 110, a substrate support 120, a gas injection unit 130, a remote plasma generator 137, an exhaust unit 140, 150, exhaust control means 161, 162, and pumps 171, 172.

The reactor 110 has a bottom portion 111, an outer wall portion 112 and an upper plate 113. The bottom part 111 is formed in the shape of a disk and the outer wall part 112 is formed to extend vertically upward from the edge of the bottom part 111 to have a closed curved shape. And a substrate transfer path (not shown) is formed in the outer wall portion 112 for transferring the substrate w. The upper plate 113 has a disk shape and is detachably coupled to the upper surface of the outer wall portion 112. When the upper plate 113 is coupled to the upper surface of the outer wall part 112, a certain space is formed in the reactor 110. In particular, the substrate supporting part 120 and the gas injecting part 130 A thin film deposition space 105 is formed. A sealing member such as an O-ring (not shown) is interposed between the lower surface of the upper plate 113 and the upper surface of the outer wall portion 112 to seal the upper space.

The substrate support 120 is installed inside the reactor 110 and includes a susceptor 122, a substrate mount 123, a shaft 121, and a heater (not shown).

The susceptor 122 is rotatably installed inside the reactor 110 in the form of a disk. Six susceptors 122 are formed with six substrate seating portions 123 concave. 2, the substrate seating portions 123 are disposed along the circumferential direction of the upper surface of the substrate supporting portion 120, and the substrate w is seated on each of the substrate seating portions 123.

One end of the shaft 121 is coupled to the lower surface of the susceptor 122 and the other end of the shaft 121 passes through the reactor 110 and is connected to a rotation driving means such as a motor (not shown). Accordingly, as the shaft 121 rotates, the susceptor 122 rotates about the rotational center axis A shown in FIG. Further, the shaft 121 is connected to a lift driving means for allowing the susceptor 122 to move up and down. The elevating and driving means includes, for example, a motor and a gear assembly (not shown). A heater (not shown) is embedded under the susceptor 122 to regulate the temperature of the substrate w.

The gas injection unit 130 is coupled to the upper plate 113 and has gas feeders 131, 132 and 135. The gas feeders 131, 132 and 135 are divided into a feed gas feeder 131, a purge gas feeder 132 and a purge gas feeder 135 depending on the type of gas to be fed. The raw material gas feeder 131 is a device for feeding raw material gas as a raw material of the thin film onto the substrate supporter 120. In order to deposit a titanium nitride (TiN) thin film on the substrate w, a titanium precursor such as titanium chloride (TiCl ₄ ) and a nitrogen-containing gas such as ammonia (NH ₃ ) are supplied to the substrate supporter 120 ). The purge gas supplier 132 is a device for supplying a purge gas purifying the source gas onto the substrate supporter 120. At this time, an inert gas such as argon (Ar) may be used as the purge gas. The raw gas feeder 131 and the purge gas feeder 132 may be configured in the form of a showerhead.

The cleaning gas supplier 135 is a device for supplying the cleaning gas for removing the thin film formed in the reactor 110, the surface of the substrate support 120, and the surface of the gas injection part 130 into the reactor 110. At this time, chlorine fluoride (ClF ₃ ) or nitrogen fluoride (NF ₃ ) may be used as the cleaning gas. Since the cleaning efficiency is excellent when the gas such as nitrogen fluoride in the cleaning gas is supplied in an activated state, the cleaning gas supply unit 135 is formed in a tubular shape having a large diameter so that the ratio of the active species supplied to the inside of the reactor 110 is high. Lt; / RTI >

The raw gas feeder 131 and the purge gas feeder 132 are arranged radially around the cleaning gas feeder 135 as shown in FIG. The purge gas feeder 132 is disposed between the feed gas feeders 131. When the substrate support 120 on which the substrate W is placed is rotated under the gas spraying unit 130 in which the source gas feeder 131 and the purge gas feeder 132 are disposed, the raw material gas, the purge gas, Since the gas and purge gas are periodically supplied onto the substrate w, atomic layer deposition becomes possible.

The remote plasma generator 137 is installed outside the reactor 110 to supply the activated cleaning gas into the reactor 110. In order to increase the cleaning efficiency, it is preferable to supply the activated cleaning gas into the reactor 110.

The exhaust units 140 and 150 are provided to exhaust the gas remaining in the reactor 110 and to increase the cleaning efficiency and to maintain a uniform cleaning speed in all areas of the reactor 110. [ And a second exhaust part 150 are provided.

The first exhaust part 140 is for annihilating the gas remaining in the reactor 110 to the lower side of the reactor 110 and is formed in an annular shape to enclose the substrate supporting part 120 in the reactor 110. The first exhaust portion 140 includes a first exhaust groove 143 and a first baffle 141.

The first evacuation groove portion 143 is formed by being surrounded by the outer wall portion 112, the inner wall portion 145, and the bottom portion 111. More specifically, the outer wall portion 112 refers to the inner surface of the outer wall of the reactor 110, and is formed in an annular shape. The bottom portion 111 refers to the bottom surface of the reactor 110. The bottom portion 111 is integrally formed in a disk shape and the bottom portion 111 has an exhaust port 144 passing through between the upper surface and the lower surface Respectively. The inner wall part 145 extends vertically upward from the bottom part 111 and is annularly disposed between the substrate supporting part 120 and the outer wall part 112 so as to be spaced apart from the outer wall part 112 by a certain distance. On the upper surfaces of the outer wall portion 112 and the inner wall portion 145, a step is formed so that a first baffle 141 to be described later can be installed.

The first baffle 141 is formed on the stepped portion formed on the outer wall portion 112 and the inner wall portion 145 as described above so as to cover the opened upper side of the first exhaust groove portion 143, Respectively. The first baffle 141 is provided with a first inlet hole 142 passing between the upper and lower surfaces thereof so that gas can be introduced into the first exhaust groove 143. The first inlet hole 142 extends through the upper surface of the first baffle 141 at a predetermined angle A plurality of them are formed at intervals. When the first baffle 141 is installed as described above, it is possible to control the flow rate of the exhaust gas by adjusting the size and the number of the inflow holes 142 formed in the first baffle 141. And the pressure in the reactor 110 may be controlled by controlling the exhaust flow rate.

The second exhaust part 150 is for annihilating the gas remaining in the reactor 110 to the upper side of the reactor 110 and is formed in an annular shape to enclose the gas injection part 130 in the reactor 110. The second exhaust portion 150 includes a second exhaust groove 153 and a second baffle 151.

The second exhaust groove 143 is formed as a groove formed in a peripheral portion of the upper plate 113 of the reactor 110 and is annularly formed to surround the gas injection portion 130. And an exhaust port 154 passing through between the upper surface and the lower surface of the upper plate 113 is formed. The upper plate 113 on which the second exhaust groove 143 is formed is provided with fixing means (not shown) to which a second baffle 151 to be described later can be fixed.

The second baffle 151 is formed in the shape of an annular plate so as to cover the open lower side of the second exhaust groove 153 and is engaged with the fixing means of the upper plate 113 as described above. A second inflow hole 152 passing between the upper surface and the lower surface of the second baffle 151 is formed at a predetermined angle along the upper surface of the second baffle 151 so that gas can be introduced into the second exhaust groove 153. A plurality of them are formed at intervals. When the second baffle 151 is installed as described above, it is possible to control the flow rate of the exhaust gas by adjusting the size and the number of the inflow holes 152 formed in the second baffle 151, like the first baffle 141 . And the pressure in the reactor 110 may be controlled by controlling the exhaust flow rate.

The pumps 171 and 172 are provided outside the reactor 110 to discharge the unreacted gas and reaction by-products in the reactor 110 to the outside of the reactor 110. The pumps 171 and 172 are provided outside the reactor 110, And a pump 171. The first pump 172 is a device for discharging the gas introduced into the first exhaust groove 141 to the outside of the reactor 110 through the first exhaust port 144. The second pump 171 is a device for exhausting the gas, And the gas introduced into the reactor 151 is discharged to the outside of the reactor 110 through the second exhaust port 154.

The exhaust control means 161 and 162 are provided with a first exhaust control means 162 and a second exhaust control means 161 as means for controlling the amount of exhaust gas. The first exhaust control means 162 is disposed between the first exhaust port 144 and the first pump 172 on the path of the exhaust gas to control the amount of exhaust gas exhausted through the first exhaust port 140 . The first exhaust control means 162 may be a means or a valve for regulating the pressure of the first exhaust portion 140. The second exhaust control means 161 is disposed between the second exhaust port 154 and the second pump 171 in the path of the exhaust gas to control the amount of exhaust gas exhausted through the second exhaust portion 150 . The second exhaust control means 161 may be a means or a valve for regulating the pressure of the second exhaust portion 150.

In the present embodiment, two pumps 171 and 172 are connected to two exhaust ports 144 and 154, respectively. However, the present invention is not limited to this, and one pump may be connected to two exhaust ports 144, 154, respectively. In this case, by appropriately adjusting the exhaust control means 161 and 162, even when one pump is used, results similar to those obtained by using two pumps can be obtained.

4 is a sectional view taken along the line V-V in FIG. 4, and FIG. 6 is a sectional view taken along the line VI-VI in FIG. 5 .

4 to 6, a thin film deposition apparatus 400 according to the second embodiment includes a reactor 410, a substrate support 420, a gas injection unit 430, a remote plasma generator 437, a discharge unit 440, 450, exhaust control means 461, 462, and pumps 471, 472.

The reactor 410, the exhaust units 440 and 450, the exhaust control units 461 and 462 and the pumps 471 and 472 provided in the thin film deposition apparatus 400 of the second embodiment are respectively connected to the first And corresponds to the reactor 110, the exhaust units 140 and 150, the exhaust control units 161 and 162 and the pumps 171 and 172 provided in the apparatus for vapor-depositing the film of the present invention.

The substrate supporting part 420 is installed inside the reactor 410 and includes a susceptor 422, a substrate seating part 423, a shaft 421, a cleaning gas supply line 435 and a heater (not shown) .

The susceptor 422 is rotatably installed inside the reactor 410 in the form of a disk. A through hole is formed in the center of the susceptor 422 to penetrate the upper surface and the lower surface of the susceptor 422 so that a cleaning gas supply line 435 to be described later is installed. Six susceptors 422 are formed with concave substrate seating portions 423. 5, the substrate seating portions 423 are disposed along the circumferential direction of the upper surface of the substrate supporting portion 420, and the substrate w is seated on each of the substrate seating portions 423.

One end of the shaft 421 is coupled to the lower surface of the susceptor 422 and the other end of the shaft 421 passes through the reactor 410 and is connected to a rotation driving means such as a motor (not shown). Accordingly, as the shaft 421 rotates, the susceptor 422 rotates about the rotational center axis B shown in FIG. Further, the shaft 421 is connected to a lift driving means for allowing the susceptor 422 to move up and down. The elevating and driving means includes, for example, a motor and a gear assembly (not shown). The shaft 421 is formed with a through hole penetrating both ends of the shaft 421 so that a cleaning gas supply line 435 to be described later is installed. The through holes formed in the shaft 421 and the through holes formed in the susceptor 421 are connected to allow gas to flow. A heater (not shown) is embedded under the susceptor 122 to regulate the temperature of the substrate w.

The cleaning gas supply line 435 is provided to supply the cleaning gas into the reactor 410 and penetrate the shaft 421 and the susceptor 422. At this time, nitrogen fluoride (NF ₃ ) may be used as the cleaning gas. Since the cleaning gas is supplied in an activated state, the cleaning efficiency is excellent, so that the cleaning gas supply line 435 may be formed in a tubular shape having a large diameter so that the ratio of active species is high.

The gas injector 430 is coupled to the upper plate 413 and has gas feeders 431 and 432. The gas feeders 431 and 432 are divided into a feed gas feeder 431 and a purge gas feeder 432 depending on the type of gas to be fed. The raw gas supply unit 431 and the purge gas supply unit 432 correspond to the raw material gas supply unit 131 and the purge gas supply unit 132 provided in the gas injection unit 130 shown in FIG.

The raw gas supply unit 431 and the purge gas supply unit 432 are radially installed along the circumferential direction of the gas injection unit 430 as shown in FIG. The purge gas supplier 432 is disposed between the raw material gas feeders 431. When the substrate supporting part 420 on which the substrate w is placed is rotated under the gas injecting part 430 in which the raw material gas supplying device 431 and the purge gas supplying device 432 are arranged, the raw material gas, the purge gas, Since the gas and purge gas are periodically supplied onto the substrate w, atomic layer deposition becomes possible.

The remote plasma generator 437 is installed outside the reactor 410 to allow the activated cleaning gas to be supplied into the reactor 410. In order to increase the cleaning efficiency, it is preferable to supply the activated cleaning gas into the reactor 410.

FIG. 7 is a flowchart showing a process of performing a cleaning method of a thin film deposition apparatus according to a preferred embodiment of the present invention. Fig. 7 shows a method of cleaning the thin film deposition apparatuses 100 and 400 shown in Figs. 1 and 4.

Referring to FIG. 7, first, the substrate W is placed on the substrate seating portions 123 and 423 provided on the substrate supporting portions 120 and 420 (S710). After the substrate supports 120 and 420 are rotated, the source gas and the purge gas are supplied to the substrate 300 through the source gas feeders 131 and 431 and the purge gas feeders 132 and 432 provided in the gas injectors 130 and 430, And the thin film is deposited on the substrate w by supplying onto the supports 120 and 420 (S715). The deposited thin film may be a metal thin film, a metal nitride film, or a metal oxide film. When a thin film is deposited in this manner, atomic layer deposition becomes possible as described above. When the thin film deposition is completed, the substrate w is discharged to the outside of the reactors 110 and 410 (S720).

When the thin film deposition process comprising steps S710 to S720 is completed, it is determined whether the inside of the reactors 110 and 410 is cleaned (S722). If it is not necessary to clean the inside of the reactor 110, 410, the thin film deposition process again (S710 to S720) is performed. If it is necessary to clean the inside of the reactor 110, 410, steps S725 to S755 to be described later are performed. Whether to perform cleaning after performing the thin film deposition process (steps S710 to S720) is appropriately selected in consideration of the kind of the thin film to be deposited, the kind of the source gas to be supplied, and the state of the thin film deposition apparatuses 100 and 400 .

Next, the height of the susceptors 122 and 422 provided on the substrate supporters 120 and 420 is adjusted by raising and lowering the substrate supporters 120 and 420 (S725). The first exhaust control means 162 and 462 and the second exhaust control means 161 and 461 are controlled such that the gas inside the reactors 110 and 410 is exhausted only through the first exhaust units 140 and 440 ). The exhaust path through the first exhaust part 140, 440 is referred to as a first exhaust path for convenience. Then, a cleaning gas is supplied into the reactors 110 and 410 to clean the surfaces of the reactors 110 and 410, the surfaces of the substrate supports 120 and 420, and the gas injectors 130 and 430 (S735). In the case of the first embodiment, the cleaning gas is supplied into the reactor 110 using the cleaning gas supplier 135. In the case of the second embodiment, the cleaning gas is supplied into the reactor 410 using the cleaning gas supply line 235 do. At this time, the supplied cleaning gas may be nitrogen fluoride, and activated nitrogen fluoride may be supplied using remote plasma generators 137 and 437 to improve cleaning efficiency. The inert gas may be supplied through the purge gas feeders 132 and 432 at the time of cleaning. The pressure inside the reactor 110 or 410 is set in the range of 0.1 to 500 Torr while the temperature of the reactor 110 or 410 and the substrate support 120 or 420 is set in the range of 50 to 500 ° C.

Next, the height of the susceptors 122 and 422 provided on the substrate supporters 120 and 420 is adjusted by lifting the substrate supporters 120 and 420 again (S740). The first exhaust control means 162 and 462 and the second exhaust control means 161 and 461 are adjusted so that the gas inside the reactors 110 and 410 is exhausted only through the second exhaust units 150 and 450 ). The exhaust path through the second exhaust units 150 and 450 is referred to as a second exhaust path for convenience. Then, a cleaning gas is supplied into the reactors 110 and 410 to clean the surfaces of the reactors 110 and 410, the surfaces of the substrate supports 120 and 420, and the gas injectors 130 and 430 (S750). The step S750 corresponds to the step S735.

Then, whether or not the thin film deposition apparatuses 100 and 400 have been cleaned is determined (S755), and steps S725 to S750 are repeated until the cleaning is completed.

Conventionally, the thin film deposition apparatus was cleaned while exhausting the cleaning gas using only one exhaust port disposed below the reactor. However, if only the exhaust port disposed below the reactor is used, the time required for the cleaning gas to remain on the surface of the gas injection portion due to the pump pumping downward of the reactor remains in the other portion (for example, the substrate supporting portion) . Therefore, there is a difference in the cleaning speed between the surface of the gas injection part and the other part, and the surface of the gas injection part is not cleaned or excessively cleaned in other parts.

However, when the thin film deposition apparatuses 100 and 400 according to the present invention are cleaned as shown in FIG. 7 during cleaning, the inside of the reactors 110 and 410 are uniformly cleaned. This is because when the first exhaust path is used, the cleaning speed becomes small when the portion having a high cleaning speed uses the second exhaust path, and on the contrary, when the first exhaust path is used, the portion having a low cleaning speed uses the second exhaust path This is because the cleaning speed is increased. That is, when the first exhaust path is used, cleaning speeds of the substrate supporting portions 120 and 420 and the lower portion of the reactor 110 are increased. When the second exhaust path is used, the gas injecting portions 130 and 430, The cleaning speed of the upper portion of the cleaning blade 110 is increased. Accordingly, when the cleaning gas is alternately exhausted through the first exhaust path and the second exhaust path, the inside of the reactor 110, 410 is uniformly cleaned. When using the respective exhaust paths, the thin film deposition apparatuses 100 and 400 are cleaned with different heights of the substrate supports 120 and 420, thereby further increasing the cleaning efficiency.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation in the embodiment in which said invention is directed. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the appended claims.

1 is a view showing a schematic configuration of a first preferred embodiment of a thin film deposition apparatus according to the present invention.

Fig. 2 is a sectional view taken along the line II-II in Fig. 1, showing a schematic configuration of a substrate supporting portion in the thin-film deposition apparatus of the first embodiment.

Fig. 3 is a sectional view taken along the line III-III of Fig. 1, showing the schematic configuration of the gas injection unit in the thin-film deposition apparatus according to the present invention.

4 is a view showing a schematic configuration of a second preferred embodiment of a thin film deposition apparatus according to the present invention.

5 is a sectional view taken along the line V-V of Fig. 4, showing the schematic structure of the substrate supporting portion in the thin film deposition apparatus of the second embodiment.

Fig. 6 is a sectional view taken along the line VI-VI of Fig. 5, showing the schematic configuration of the gas injection unit in the thin film deposition apparatus of the second embodiment.

FIG. 7 is a flowchart showing a process of performing a cleaning method of a thin film deposition apparatus according to a preferred embodiment of the present invention.

Description of the Related Art

110, 410: reactor 120, 420: substrate support

130, 430: gas spraying part 105, 405: thin film deposition space

140, 440: first exhaust section 150, 450: second exhaust section

141, 441: first baffle 151, 451: second baffle

135: Cleaning gas supplier 435: Cleaning gas supply line

161, 461: first exhaust control means 162, 462: second exhaust control means

171, 471: first pump 172, 472: second pump

137, 437: remote plasma generator

Claims (12)

A reactor; A first exhaust port for exhausting the gas inside the reactor to the outside; A second exhaust port for exhausting gas inside the reactor to the outside and formed above the first exhaust port; A substrate supporting part rotatably installed in the reactor, the substrate supporting part being provided with a plurality of substrate seating parts on which the substrates are mounted; A cleaning gas supply unit installed above the substrate support unit for supplying a cleaning gas into the reactor, a plurality of source gas supply units for supplying the source gas onto the substrate support unit, and a plurality of source gas supply units arranged between the plurality of source gas supply units, And a plurality of purge gas feeders for feeding a purge gas for purging the gas onto the substrate supporter, wherein the plurality of feed gas feeders and the plurality of purge gas feeders are arranged in a radial manner around the purge gas feeder, Quasi; And The distance between the substrate supporting portion and the gas ejecting portion when the cleaning gas is exhausted through the first exhaust port and the distance between the substrate supporting portion and the substrate ejecting portion when exhausted through the second exhaust port are different from each other Lifting drive means for lifting and lowering the substrate supporting portion; And a thin film deposition apparatus. A reactor; A first exhaust port for exhausting the gas inside the reactor to the outside; A second exhaust port for exhausting gas inside the reactor to the outside and formed above the first exhaust port; A substrate supporting unit rotatably installed in the reactor and having a cleaning gas supply line for supplying a cleaning gas into the reactor at a central portion thereof and having a plurality of substrate mounting portions on which the substrates are mounted; A plurality of source gas supply units provided on the substrate supporting unit and supplying the source gas onto the substrate supporting unit; and a purge gas disposed between the plurality of source gas supply units and purging the source gas, A plurality of purge gas feeders and a plurality of purge gas feeders arranged radially with reference to a position corresponding to a central portion of the substrate support portion; And The distance between the substrate supporting portion and the gas ejecting portion when the cleaning gas is exhausted through the first exhaust port and the distance between the substrate supporting portion and the substrate ejecting portion when exhausted through the second exhaust port are different from each other Lifting drive means for lifting and lowering the substrate supporting portion; And a thin film deposition apparatus. 3. The method according to claim 1 or 2, Further comprising plasma generating means for activating the cleaning gas so that the activated cleaning gas is supplied to the interior of the reactor. The method of claim 3, Wherein the plasma generating means is a remote plasma generator. delete 3. The method according to claim 1 or 2, A first pump communicating with the first exhaust port to discharge the gas introduced into the first exhaust port to the outside of the reactor; A second pump communicating with the second exhaust port for discharging gas introduced into the second exhaust port to the outside of the reactor; And Further comprising exhaust control means for controlling an amount of each of the gases introduced into the first exhaust port and the second exhaust port. 3. The method according to claim 1 or 2, A pump connected to the first exhaust port and the second exhaust port for discharging the gas introduced into the first exhaust port and the second exhaust port to the outside of the reactor; And Further comprising exhaust control means for controlling an amount of each of the gases introduced into the first exhaust port and the second exhaust port. A method for cleaning the thin film deposition apparatus according to claim 1 or 2, Placing the substrate on the substrate support; Depositing a thin film on the substrate; Discharging the substrate on which the thin film is deposited to the outside of the reactor; Cleaning the inside of the reactor by supplying the cleaning gas into the reactor in-situ; And The distance between the substrate supporting portion and the gas ejecting portion when the cleaning gas is exhausted through the first exhaust port and the distance between the substrate supporting portion and the substrate ejecting portion when exhausted through the second exhaust port are different from each other And moving up and down the substrate support unit so as to move the substrate support unit. 9. The method of claim 8, Wherein the cleaning gas is at least one of chlorine fluoride (ClF ₃ ) and nitrogen fluoride (NF ₃ ). 9. The method of claim 8, Wherein the cleaning gas is exhausted through at least one of the first exhaust port and the second exhaust port. 11. The method of claim 10, Wherein the cleaning gas is alternately exhausted through the first exhaust port and the second exhaust port. delete

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