KR20100056273A - Apparatus for depositing thin film on wafer and method for cleaning the apparatus - Google Patents

Abstract

PURPOSE: A thin film depositing apparatus and a method for cleaning the same are provided to obtain a uniform cleaning speed on all regions inside a reactor and maximize the efficiency of a cleaning gas when cleaning a thin film deposition device. CONSTITUTION: A thin film deposition apparatus(100) includes a reactor(110), a substrate support unit(120), and a gas spray unit(130). The substrate supporter is pivotally installed inside the reactor and includes a plurality of substrate receiving units which receives a substrate(w). A gas spray unit is installed on the upper side of the substrate support unit and includes a cleaning gas supply unit(135), a plurality of raw gas supply units(131), and a plurality of purge gas supply units(132). The cleaning gas supply unit supplies the clean gas into the reactor. The plurality of raw gas supply units supplies the raw gas to the substrate support unit. The plurality of purge gas supply units is arranged between the plurality of raw gas supply units and supplies the purge gas which purges the raw gas to the substrate support unit.

Description

Apparatus for depositing thin film on wafer and method for cleaning the apparatus}

The present invention relates to a thin film deposition apparatus and a thin film deposition apparatus cleaning method, and more particularly, to an apparatus capable of depositing a thin film on a plurality of wafers in one reactor and a cleaning method of the apparatus.

A thin film deposition apparatus is a device for depositing a thin film on a substrate, the method of depositing a thin film on a substrate is physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (atomic) layer deposition, ALD).

In the process of depositing a thin film on a substrate, unwanted thin films are deposited on the walls of the reactor, the showerhead surface, the susceptor surface, and the like in addition to the substrate. In particular, in the chemical vapor deposition method or the atomic layer deposition method, the thin film is deposited by the reaction of the source gases, and when the source gases react in a portion other than the substrate, the thin film is deposited inside the reactor.

When the thin film deposition process is repeated, the thin film deposited inside the reactor becomes thick, and when the thin film deposited inside the reactor is peeled off and deposited on the substrate, the desired thin film cannot be deposited. Therefore, it is essential to clean the thin film deposition apparatus after a certain number of processes.

The thin film deposition apparatus may be cleaned by disassembling the apparatus and using a cleaning solution or by supplying a cleaning gas into the thin film deposition apparatus without breaking the vacuum after the thin film deposition process, that is, in-situ. ), There is a method of washing. Cleaning the thin film deposition apparatus in situ is preferable to using a cleaning solution because less time is required to enter the thin film deposition process after cleaning.

On the other hand, in recent years, the size of a substrate has increased, and the size of a thin film deposition apparatus has been enlarged by using several substrates simultaneously. Therefore, there is a need for a method of efficiently cleaning a large-sized thin film deposition apparatus.

The technical problem to be solved by the present invention is to maximize the efficiency of the cleaning gas when cleaning the thin film deposition apparatus, and to provide a thin film deposition apparatus and a method for cleaning the apparatus having a uniform cleaning speed in all areas inside the reactor.

In order to solve the above technical problem, a first preferred embodiment of the thin film deposition apparatus according to the present invention is a reactor; A substrate support part rotatably installed in the reactor and provided with a plurality of substrate seating parts on which a substrate is mounted; And a cleaning gas supplier for supplying a cleaning gas into the reactor, a plurality of source gas suppliers for supplying a cleaning gas into the reactor, and a plurality of source gas supplies for supplying a source gas onto the substrate support, A gas having a plurality of purge gas supplies for supplying a purge gas for purging the source gas onto the substrate support, wherein the plurality of source gas supplies and the plurality of purge gas supplies are disposed radially around the cleaning gas supplier It is provided with an injection unit.

In order to solve the above technical problem, a second preferred embodiment of the thin film deposition apparatus according to the present invention is a reactor; A substrate support part rotatably installed in the reactor, a cleaning gas supply line configured to supply a cleaning gas into the reactor at a central portion thereof, and having a plurality of substrate seating parts on which a substrate is mounted; And a plurality of source gas supplies disposed above the substrate support and supplying source gas onto the substrate support, and a purge gas disposed between the plurality of source gas supplies to purge the source gas onto the substrate support. And a plurality of purge gas supplies configured to supply gas to the gas injectors, wherein the plurality of source gas supplies and the plurality of purge gases are radially disposed.

In order to solve the above technical problem, a preferred embodiment of the thin film deposition apparatus cleaning method according to the present invention comprises the steps of mounting a substrate on the substrate support; Depositing a thin film on the substrate; Discharging the substrate on which the thin film is deposited to the outside of the reactor; And cleaning the inside of the reactor by supplying the cleaning gas into the reactor in-situ.

According to the present invention, since the activated cleaning gas is supplied through the central portion of the gas injector or the substrate support, the efficiency of the cleaning gas is maximized. In addition, exhaust ports are formed on the upper side and the lower side of the reactor so that the cleaning gas can be effectively cleaned not only to the bottom of the reactor, but also to the top of the reactor and the surface of the gas injection unit. Therefore, when the thin film deposition apparatus is cleaned in-situ, it is possible to have a uniform washing speed in all regions inside the reactor, thereby increasing productivity by increasing the apparatus use time.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of a thin film deposition apparatus and a method for cleaning the device according to the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

1 is a view showing a schematic configuration of a first preferred embodiment of a thin film deposition apparatus according to the present invention, FIG. 2 is a sectional view taken along the line II-II of FIG. 1, and FIG. 3 is a sectional view taken along the line III-III of FIG. .

1 to 3, the thin film deposition apparatus 100 of the first embodiment includes a reactor 110, a substrate supporter 120, a gas injector 130, a remote plasma generator 137, and an exhauster 140. 150, exhaust control means (161, 162) and pumps (171, 172).

The reactor 110 includes a bottom 111, an outer wall 112, and an upper plate 113. The bottom portion 111 is formed in the shape of a disc, the outer wall portion 112 is formed extending vertically upward from the edge of the bottom portion 111 is made of a closed curved shape. The outer wall portion 112 is provided with a substrate w transfer passage (not shown) through which the substrate w enters and exits. The upper plate 113 is formed in a disk shape, is detachably coupled to the upper surface of the outer wall portion 112. When the upper plate 113 is coupled to the upper surface of the outer wall portion 112, a predetermined space is formed inside the reactor 110, and in particular, the substrate support 120 and the gas injection unit 130 above the substrate support 120 to be described later. In between the thin film deposition space 105 is formed. A sealing member such as an O-ring (not shown) is interposed between the lower surface of the upper plate 113 and the upper surface of the outer wall portion 112 to seal the upper space.

The substrate support 120 is installed inside the reactor 110 and includes a susceptor 122, a substrate seating part 123, a shaft 121, and a heater (not shown).

The susceptor 122 is rotatably installed in the reactor 110 in the shape of a disc. Six substrate mounting portions 123 are formed in the susceptor 122 to be concave. As shown in FIG. 2, the substrate mounting parts 123 are disposed along the circumferential direction of the upper surface of the substrate support part 120, and the substrate w is mounted on each substrate mounting part 123.

One end of the shaft 121 is coupled to the lower surface of the susceptor 122, and the other end penetrates through the reactor 110, and is connected to a rotation driving means such as a motor (not illustrated). Therefore, as the shaft 121 rotates, the susceptor 122 rotates about the rotation center axis A shown in FIG. 1. In addition, the shaft 121 is connected to the lifting drive means for allowing the susceptor 122 to lift. Lifting drive means include, for example, a motor and a gear assembly (not shown). A heater (not shown) is embedded under the susceptor 122 to adjust the temperature of the substrate w.

The gas injector 130 is coupled to the upper plate 113 and includes gas supplies 131, 132, and 135. The gas supplies 131, 132, and 135 are classified into a source gas supplier 131, a purge gas supplier 132, and a cleaning gas supplier 135 according to the type of gas to be supplied. The source gas supplier 131 is a device for supplying a source gas, which is a raw material of a thin film, onto the substrate support unit 120. In order to deposit a titanium nitride (TiN) thin film on the substrate (w), a titanium precursor such as titanium chloride (TiCl ₄ ) and a nitrogen-containing gas such as ammonia (NH ₃ ) are supplied to the substrate support 120 through the source gas supply 131. ) To the phase. The purge gas supplier 132 is a device for supplying the purge gas for purging the raw material gas onto the substrate support 120. In this case, an inert gas such as argon (Ar) may be used as the purge gas. The source gas supplier 131 and the purge gas supplier 132 may be configured in the form of a shower head.

The cleaning gas supplier 135 is a device for supplying the cleaning gas for removing the thin film formed on the inside of the reactor 110, the surface of the substrate support 120, and the surface of the gas injector 130 into the reactor 110. In this case, chlorine fluoride (ClF ₃ ) or nitrogen fluoride (NF ₃ ) may be used as the cleaning gas. Since the gas such as nitrogen fluoride in the cleaning gas is activated in an excellent state, the cleaning efficiency is excellent. Thus, the cleaning gas supply 135 is formed in a large diameter tube so that the ratio of the active species supplied into the reactor 110 is increased. Can be configured.

The source gas supplier 131 and the purge gas supplier 132 are radially disposed around the cleaning gas supplier 135 as shown in FIG. 3. The purge gas supplier 132 is disposed between the source gas supplier 131. As such, when the substrate support part 120 on which the substrate w is seated is rotated under the gas injector 130 in which the source gas supplier 131 and the purge gas supplier 132 are disposed, the source gas, purge gas, and raw material are rotated. Since gas and purge gas are periodically supplied on the substrate w, atomic layer deposition is possible.

The remote plasma generator 137 is installed outside the reactor 110 so that the activated cleaning gas is supplied into the reactor 110. In order to increase the cleaning efficiency, it is preferable to supply the activated cleaning gas into the reactor 110.

The exhaust parts 140 and 150 are for exhausting the gas remaining in the reactor 110, and increase the cleaning efficiency and have a uniform cleaning speed in all regions of the reactor 110. The second exhaust part 150 is provided.

The first exhaust unit 140 is for exhausting the gas remaining in the reactor 110 to the lower side of the reactor 110, it is formed in an annular shape to surround the substrate support portion 120 inside the reactor (110). The first exhaust part 140 includes a first exhaust groove 143 and a first baffle 141.

The first exhaust groove 143 is formed surrounded by the outer wall portion 112, the inner wall portion 145 and the bottom portion 111. In more detail, the outer wall portion 112 is formed in an annular shape as referring to the inner surface of the outer wall of the reactor 110. The bottom part 111 refers to the bottom surface of the reactor 110, and the bottom part 111 is formed integrally in a disc shape, and the bottom part 111 has an exhaust port 144 penetrating between the top and bottom surfaces thereof. Formed. The inner wall portion 145 extends vertically upward from the bottom portion 111 and is disposed in a ring shape between the substrate support portion 120 and the outer wall portion 112 so as to be spaced apart from the outer wall portion 112 by a predetermined distance. Steps are formed on the upper surfaces of the outer wall 112 and the inner wall 145 so that the first baffle 141 to be described later is installed.

The first baffle 141 is formed in an annular plate shape so as to cover the open upper side of the first exhaust groove 143 on the step formed in the outer wall portion 112 and the inner wall portion 145 as described above. Is installed. In addition, the first inlet hole 142 penetrating between the upper and lower surfaces of the first baffle 141 to allow gas to flow into the first exhaust groove 143 has a predetermined angle along the upper surface of the first baffle 141. Plural numbers are formed at intervals. As such, when the first baffle 141 is installed, it is possible to control the exhaust flow rate by adjusting the size and number of the inflow holes 142 formed in the first baffle 141. In addition, the pressure in the reactor 110 may be adjusted by controlling the exhaust flow rate.

The second exhaust unit 150 is for exhausting the gas remaining in the reactor 110 above the reactor 110, and is formed in an annular shape to surround the gas injection unit 130 inside the reactor 110. The second exhaust unit 150 includes a second exhaust groove 153 and a second baffle 151.

The second exhaust groove 143 is a groove formed at the periphery of the upper plate 113 of the reactor 110, and is formed in a ring shape to surround the gas injection unit 130. An exhaust port 154 penetrating between the upper and lower surfaces of the upper plate 113 is formed. The upper plate 113 having the second exhaust groove 143 is provided with fixing means (not shown) to which the second baffle 151 to be described later is fixed.

The second baffle 151 is formed in an annular plate shape to block the open lower side of the second exhaust groove 153 and is coupled with the fixing means of the upper plate 113 as described above. In addition, a second inlet hole 152 penetrating between the upper and lower surfaces of the second baffle 151 to allow gas to flow into the second exhaust groove 153 has a predetermined angle along the upper surface of the second baffle 151. Plural numbers are formed at intervals. When the second baffle 151 is installed as described above, like the first baffle 141, it is possible to control the exhaust flow rate by adjusting the size and number of the inflow holes 152 formed in the second baffle 151. . In addition, the pressure in the reactor 110 may be adjusted by controlling the exhaust flow rate.

The pumps 171 and 172 are installed outside the reactor 110 and discharge the unreacted gas, reaction by-products, etc., inside the reactor 110 to the outside of the reactor 110, and include the first pump 172 and the second pump. A pump 171 is provided. The first pump 172 is a device for discharging the gas introduced into the first exhaust groove 141 to the outside of the reactor 110 through the first exhaust pipe 144, the second pump 171 is the second exhaust groove Gas introduced into the 151 is a device for discharging to the outside of the reactor 110 through the second exhaust 154.

Exhaust control means (161, 162) is a means for adjusting the amount of gas to be exhausted, and includes a first exhaust control means 162 and the second exhaust control means (161). The first exhaust control means 162 is installed between the first exhaust port 144 and the first pump 172 on the movement path of the exhaust gas to adjust the amount of exhaust gas exhausted through the first exhaust unit 140. It is for. The first exhaust control means 162 may be a means or a valve for adjusting the pressure of the first exhaust 140. The second exhaust control means 161 is installed between the second exhaust port 154 and the second pump 171 on the movement path of the exhaust gas to adjust the amount of exhaust gas exhausted through the second exhaust unit 150. It is for. The second exhaust control means 161 may be a means or a valve for adjusting the pressure of the second exhaust portion 150.

In the present exemplary embodiment, a case in which two pumps 171 and 172 are connected to each of the two exhaust ports 144 and 154 is illustrated and described, but the present invention is not limited thereto. 154). In this case, if the exhaust control means (161, 162) is properly adjusted, even when one pump is used, similar results to those of using two pumps can be obtained.

4 is a view showing a schematic configuration of a second preferred embodiment of a thin film deposition apparatus according to the present invention, FIG. 5 is a cross-sectional view taken along the line V-V of FIG. 4, and FIG. 6 is a cross-sectional view taken along the line VI-VI of FIG. .

4 to 6, the thin film deposition apparatus 400 of the second embodiment includes a reactor 410, a substrate support 420, a gas injector 430, a remote plasma generator 437, and an exhaust 440. 450, exhaust control means 461 and 462 and pumps 471 and 472.

The reactor 410, the exhaust units 440 and 450, the exhaust control means 461 and 462 and the pumps 471 and 472 provided in the thin film deposition apparatus 400 of the second embodiment are respectively shown in FIG. 1. Corresponding to the reactor 110, the exhaust units 140 and 150, the exhaust control means 161 and 162 and the pumps 171 and 172 provided in the bar deposition apparatus 100 of the embodiment.

The substrate support 420 is installed inside the reactor 410, and includes a susceptor 422, a substrate seating part 423, a shaft 421, a cleaning gas supply line 435, and a heater (not shown). .

The susceptor 422 is rotatably installed in the reactor 410 in the shape of a disc. The through hole penetrating the upper and lower surfaces of the susceptor 422 is formed at the center of the susceptor 422 so that the cleaning gas supply line 435 to be described later is installed. Six substrate mounting portions 423 are formed in the susceptor 422 to be concave. As shown in FIG. 5, the substrate mounting parts 423 are disposed along the circumferential direction of the upper surface of the substrate support part 420, and the substrate w is mounted on each of the substrate mounting parts 423.

One end of the shaft 421 is coupled to the lower surface of the susceptor 422, and the other end of the shaft 421 is connected to a rotation driving means such as a motor (not shown) through the reactor 410. Accordingly, as the shaft 421 rotates, the susceptor 422 rotates about the rotation center axis B shown in FIG. 1. In addition, the shaft 421 is connected to the lifting drive means for allowing the susceptor 422 to lift. Lifting drive means include, for example, a motor and a gear assembly (not shown). The shaft 421 is formed with through holes penetrating both ends of the shaft 421 so that the cleaning gas supply line 435 to be described later is installed. The through hole formed in the shaft 421 and the through hole formed in the susceptor 421 are connected to allow gas to flow. A heater (not shown) is embedded under the susceptor 122 to adjust the temperature of the substrate w.

The cleaning gas supply line 435 is for supplying the cleaning gas into the reactor 410 and is installed to penetrate the shaft 421 and the susceptor 422. In this case, the cleaning gas may be nitrogen fluoride (NF ₃ ). Since the cleaning gas is supplied in an activated state with excellent cleaning efficiency, the cleaning gas supply line 435 may have a large diameter tube shape so that the ratio of active species is high.

The gas injector 430 is coupled to the upper plate 413 and includes gas supplies 431 and 432. The gas supplies 431 and 432 are divided into the source gas supplier 431 and the purge gas supplier 432 according to the type of the gas to be supplied. The source gas supplier 431 and the purge gas supplier 432 correspond to the source gas supplier 131 and the purge gas supplier 132 provided in the gas injector 130 shown in FIG. 1, respectively.

The source gas supplier 431 and the purge gas supplier 432 are radially installed along the circumferential direction of the gas injection unit 430 as shown in FIG. 6. The purge gas supplier 432 is disposed between the raw material gas supplier 431. As such, when the substrate support part 420 on which the substrate w is seated rotates under the gas injector 430 in which the source gas supplier 431 and the purge gas supplier 432 are disposed, the source gas, the purge gas, and the raw material are rotated. Since gas and purge gas are periodically supplied on the substrate w, atomic layer deposition is possible.

The remote plasma generator 437 is installed outside the reactor 410 so that the activated cleaning gas is supplied into the reactor 410. In order to increase the cleaning efficiency, it is preferable to supply the activated cleaning gas into the reactor 410.

7 is a flowchart illustrating a process of performing a preferred embodiment of the cleaning method of the thin film deposition apparatus according to the present invention. FIG. 7 illustrates a method of cleaning the thin film deposition apparatuses 100 and 400 illustrated in FIGS. 1 and 4.

Referring to FIG. 7, first, the substrate w is seated on the substrate mounting parts 123 and 423 provided in the substrate support parts 120 and 420 (S710). After the substrate supporting parts 120 and 420 are rotated, the raw material gas and the purge gas are supplied through the raw material gas supplies 131 and 431 and the purge gas supplies 132 and 432 provided in the gas injectors 130 and 430. The thin film is deposited on the substrate w by being supplied onto the support parts 120 and 420 (S715). The deposited thin film may be a metal thin film, a metal nitride film, or a metal oxide film. Depositing a thin film in this manner enables atomic layer deposition as described above. When the thin film deposition is completed, the substrate (w) is discharged to the outside of the reactor (110, 410) (S720).

When the thin film deposition process consisting of the steps S710 to S720 is completed, it is determined whether the need for cleaning inside the reactor (110, 410) (S722). If it is not necessary to clean the inside of the reactor (110, 410), the thin film deposition process (steps S710 to S720) is performed again. And if it is necessary to clean the inside of the reactor (110, 410), steps S725 to S755 will be described later. The number of thin film deposition processes (steps S710 to S720) to be cleaned after the number of thin film deposition processes (steps S710 to S720) may be appropriately selected in consideration of the type of thin film to be deposited, the type of source gas to be supplied, and the state of the thin film deposition apparatuses 100 and 400. Can be.

Next, the height of the susceptors 122 and 422 provided in the substrate support parts 120 and 420 is adjusted by elevating the substrate support parts 120 and 420 (S725). Then, the first exhaust gas adjusting means 162 and 462 and the second exhaust gas adjusting means 161 and 461 are adjusted such that the gas inside the reactor 110 or 410 is exhausted only through the first exhaust parts 140 and 440 (S730). ). A path exhausted through the first exhaust parts 140 and 440 is referred to as a first exhaust path for convenience. The cleaning gas is supplied into the reactors 110 and 410 to clean the surfaces of the reactors 110 and 410, the surface of the substrate supporting parts 120 and 420, and the surfaces of the gas injection parts 130 and 430 (S735). In the first embodiment, the cleaning gas is supplied into the reactor 110 using the cleaning gas supplier 135, and in the second embodiment, the cleaning gas is supplied into the reactor 410 using the cleaning gas supply line 235. do. In this case, the supplied cleaning gas may be nitrogen fluoride, and activated nitrogen fluoride may be supplied using the remote plasma generators 137 and 437 to increase the cleaning efficiency. At the time of cleaning, the inert gas may be supplied through the purge gas supplies 132 and 432. At the time of washing, the pressure inside the reactors 110 and 410 is set in the range of 0.1 to 500 Torr, and the temperatures of the reactors 110 and 410 and the substrate supports 120 and 420 are set in the range of 50 to 500 ° C.

Next, the height of the susceptors 122 and 422 provided in the substrate support parts 120 and 420 is adjusted by elevating the substrate support parts 120 and 420 again (S740). Then, the first exhaust gas adjusting means 162 and 462 and the second exhaust gas adjusting means 161 and 461 are adjusted such that the gas inside the reactors 110 and 410 is exhausted only through the second exhaust parts 150 and 450 (S745). ). The path exhausted through the second exhaust parts 150 and 450 is referred to as a second exhaust path for convenience. The cleaning gas is supplied into the reactors 110 and 410 to clean the surfaces of the reactors 110 and 410, the surface of the substrate supporting parts 120 and 420, and the surfaces of the gas injection parts 130 and 430 (S750). Step S750 corresponds to step S735.

After determining whether the thin film deposition apparatuses 100 and 400 have been cleaned (S755), steps S725 to S750 are repeatedly performed until the cleaning is completed.

Conventionally, the thin film deposition apparatus was cleaned while exhausting the cleaning gas using only one exhaust port arranged below the reactor. However, if only the exhaust port disposed below the reactor is used, the time that the cleaning gas stays on the surface of the gas injection part by the force of the pump pumping down the reactor is the time that the other part of the reactor (for example, the substrate support part) stays. Significantly shorter than. Therefore, the cleaning speed is different from the surface of the gas injector and the other part, so that the surface of the gas injector is not cleaned or excessively washed in the other part.

However, when the thin film deposition apparatuses 100 and 400 according to the present invention are cleaned as shown in FIG. 7, the inside of the reactors 110 and 410 are uniformly cleaned. This means that when the first exhaust path is used, the portion having the higher cleaning speed uses the second exhaust path, and the cleaning speed becomes smaller. On the contrary, when the first exhaust path is used, the portion having the lower cleaning speed uses the second exhaust path. In this case, the cleaning speed is increased. That is, when the first exhaust path is used, the cleaning speeds of the substrate support parts 120 and 420 and the lower part of the reactor 110 are increased, and when the second exhaust path is used, the gas injection parts 130 and 430 and the reactor are used. The cleaning speed of the upper portion of 110 becomes large. Therefore, when the cleaning gas is alternately exhausted through the first exhaust path and the second exhaust path, the inside of the reactors 110 and 410 is uniformly cleaned. When each exhaust path is used, cleaning the thin film deposition apparatuses 100 and 400 while varying the heights of the substrate supports 120 and 420 may further increase the cleaning efficiency.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

1 is a view showing a schematic configuration of a first preferred embodiment of a thin film deposition apparatus according to the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1, showing a schematic configuration of the substrate support in the thin film deposition apparatus of the first embodiment.

3 is a cross-sectional view taken along the line III-III of FIG.

4 is a view showing a schematic configuration of a second preferred embodiment of a thin film deposition apparatus according to the present invention.

FIG. 5 is a cross-sectional view taken along the line V-V of FIG. 4, showing a schematic configuration of the substrate support in the thin film deposition apparatus of the second embodiment.

FIG. 6 is a cross-sectional view taken along the line VI-VI of FIG. 5, showing a schematic configuration of the gas injection section in the thin film deposition apparatus of the second embodiment.

7 is a flowchart illustrating a process of performing a preferred embodiment of the cleaning method of the thin film deposition apparatus according to the present invention.

<Explanation of symbols for the main parts of the drawings>

110, 410: reactor 120, 420: substrate support

130, 430: gas injection unit 105, 405: thin film deposition space

140, 440: first exhaust unit 150, 450: second exhaust unit

141, 441: 1st baffle 151, 451: 2nd baffle

135: cleaning gas supply 435: cleaning gas supply line

161, 461: first exhaust control means 162, 462: second exhaust control means

171, 471: first pump 172, 472: second pump

137, 437: remote plasma generator

Claims (12)

Reactor; A substrate support part rotatably installed in the reactor and provided with a plurality of substrate seating parts on which a substrate is mounted; And A raw material disposed above the substrate support and disposed between a cleaning gas supplier for supplying a cleaning gas into the reactor, a plurality of source gas supplies for supplying a source gas onto the substrate support, and the plurality of source gas supplies; A gas purge having a plurality of purge gas supplies for supplying a purge gas for purging the gas onto the substrate support, wherein the plurality of source gas supplies and the plurality of purge gas supplies are radially disposed around the cleaning gas supplier Thin film deposition apparatus comprising a; portion. Reactor; A substrate support part rotatably installed in the reactor, a cleaning gas supply line configured to supply a cleaning gas into the reactor at a central portion thereof, and having a plurality of substrate seating parts on which a substrate is mounted; And A plurality of source gas supplies disposed above the substrate support and supplying source gas to the substrate support, and a purge gas disposed between the plurality of source gas supplies to purge the source gas onto the substrate support. And a gas injector having a plurality of purge gas supplies to supply the gas injectors, wherein the plurality of source gas supplies and the plurality of purge gases are radially disposed. The method according to claim 1 or 2, And a plasma generating means for activating the cleaning gas so that the activated cleaning gas is supplied into the reactor. The method of claim 3, The plasma generating means is a thin film deposition apparatus, characterized in that the remote plasma generator (remote plasma generator). The method of claim 3, The substrate support is installed to be elevated, The reactor is formed with a first exhaust port and the second exhaust port for exhausting the gas inside the reactor to the outside, the second exhaust port is thin film deposition apparatus, characterized in that formed on the upper side than the first exhaust. The method of claim 5, A first pump installed in communication with the first exhaust port to discharge the gas introduced into the first exhaust port to the outside of the reactor; A second pump installed in communication with the second exhaust port to discharge the gas introduced into the second exhaust port to the outside of the reactor; And Thin film deposition apparatus further comprises; exhaust control means for adjusting the amount of each gas flowing into the first exhaust and the second exhaust. The method of claim 5, A pump installed in communication with the first exhaust port and the second exhaust port to discharge the gas introduced into the first exhaust port and the second exhaust port to the outside of the reactor; And Thin film deposition apparatus further comprises; exhaust control means for adjusting the amount of each gas flowing into the first exhaust and the second exhaust. In the method for cleaning the thin film deposition apparatus according to claim 5, Mounting a substrate on the substrate support; Depositing a thin film on the substrate; Discharging the substrate on which the thin film is deposited to the outside of the reactor; And And cleaning the inside of the reactor by supplying the cleaning gas to the inside of the reactor in-situ. The method of claim 8, The cleaning gas is a thin film deposition apparatus cleaning method, characterized in that at least one of chlorine fluoride (ClF ₃ ) and nitrogen fluoride (NF ₃ ). The method of claim 8, And the cleaning gas is exhausted through at least one of the first and second exhaust ports. The method of claim 10, And the cleaning gas is alternately exhausted through the first and second exhaust ports. The method of claim 11, The distance between the substrate support and the gas injector when the cleaning gas is exhausted through the first exhaust port is different from the distance between the substrate support and the substrate injector when the cleaning gas is exhausted through the second exhaust port. The method of claim 1, further comprising elevating the substrate support.

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