TWI576461B - Thin film deposition method - Google Patents

Description

Thin film deposition method

The present invention relates to a method of depositing a thin film in a semiconductor fabrication process, and more particularly to a method of depositing a thin film on a plurality of substrates by a single process.

In the film manufacturing process, as the design rule of the semiconductor component gradually reaches the level of physical limit, in order to further improve the physical properties of the film, an atomic layer deposition (ALD) method is studied. Or cyclic chemical vapor deposition (cyclic CVD).

The principle of ALD is as follows. When the first material gas is supplied into the reactor in a vapor state, chemical adsorption of the monoatomic layer occurs by reaction with the surface of the substrate. When the surface is saturated, the first material gas above the monoatomic layer is in a physically adsorbed state due to non-reactivity between the same ligands. The first material gas in the physically adsorbed state is removed by a purge gas. When the first layer is supplied with the second material gas, the second layer is grown by the displacement reaction between the ligands, and the second material gas that has not reacted with the first layer is in a physical adsorption state, thereby being blown Sweep gas removal. Further, the surface of the second layer is in a state of being reacted with the first material gas. This constitutes a cycle in which a plurality of cycles are repeated to deposit a film.

In order to maintain a stable ALD reaction in the reactor, it is necessary to supply the first material gas and the second material gas to the reactor in a separated manner so as not to be mixed with each other in the gas phase. A current general method is to perform ALD by repeating the interactive ejection of the first material gas and the second material gas N times in a single-chamber chamber in which a shower head is mounted. To this end, it is necessary to supply the first material gas and the second material gas to the reactor separately at different time intervals using different gas supply lines. Further, in order to remove the residual gas in the reactor, a method of separately supplying a purge gas to the supply process of the first source gas and the second source gas is used. As described above, in order to supply the first material gas, the second material gas, and the purge gas at intervals, a valve is used.

The complexity of the valve and the frequent operation of the valve not only shorten the life of the valve, but also increase the maintenance cost of the equipment, and the downtime of the equipment due to equipment maintenance increases, resulting in a decrease in productivity. Further, in the conventional single-wafer thin film deposition apparatus, a substrate is placed on a fixed heater (or a susceptor), and a unit cycle of ALD or cyclic CVD is repeated N times to deposit a film of a desired thickness. However, in a more ultra-fine component pattern, it is difficult to satisfy the required step coverage or the purity of the film, and even if the required specification is met, the deposition time becomes long. Inevitably a large loss of productivity.

An object of the present invention is to provide a thin film deposition method capable of depositing a thin film with higher productivity than conventional ALD or cyclic CVD.

In order to achieve the above object, a thin film deposition method according to the present invention deposits a thin film by using a thin film deposition apparatus which deposits a thin film while rotating the gas ejecting portion and the substrate supporting portion.

The thin film deposition method of the present invention utilizes a thin film deposition apparatus for depositing a thin film, the thin film deposition apparatus comprising: a substrate support portion having a plurality of substrate placement portions for a plurality of substrates, and a gas ejecting portion Provided on an upper portion of the substrate supporting portion, one or more gases are supplied to the substrate supporting portion, and the substrate supporting portion and the gas ejecting portion are relatively rotatable; the thin film deposition method includes: step (a) on the substrate a plurality of substrates are placed in the placing portion, and in step (b), the substrate supporting portion and the gas ejecting portion are relatively rotated, and the material gas and the reaction gas reacting with the material gas are supplied to the substrate by the gas ejecting portion. a film is deposited on the substrate, and in step (c), while the substrate supporting portion and the gas ejecting portion are relatively rotated, the inert gas is supplied to the substrate supporting portion by the gas ejecting portion, thereby blowing Purging; and step (d), while the substrate supporting portion and the gas ejecting portion are relatively rotated, The gas injection unit supplies the post-treatment gas to the substrate support portion to perform post-processing.

In the present invention, the cycle consisting of the above steps (b) to (d) is repeated at least once until a film of a desired thickness is obtained.

The relative rotation of the gas ejecting portion and the substrate supporting portion refers to all the concepts including rotating the substrate supporting portion in a state where the gas ejecting portion is fixed; and conversely, fixing the substrate supporting portion In this state, the gas injection unit is rotated; and both the gas injection unit and the substrate support unit are rotated, and in this case, the rotation is performed in the same direction at different speeds or in the opposite direction. In the present invention, in particular, it is preferable to rotate the substrate supporting portion in a state in which the gas ejecting portion is fixed, which is due to stability and efficiency of the system. Therefore, in a preferred embodiment, the substrate supporting portion is rotated, thereby further comprising, between the step (a) and the step (b), accelerating the rotation speed of the substrate supporting portion to a predetermined value. The steps of the RPM.

The step (b) of depositing the film is performed by CVD or by ALD. In the case of performing the CVD method, the gas injection unit is configured such that the gas injection unit is radially disposed by a plurality of gas supply units, and at least one of the gas supply units is for simultaneously supplying the material gas. And a process gas supplier for the reaction gas, at least one of which is a purge gas supplier for supplying an inert gas. In this case, the above step (b) is configured such that the substrate is continuously passed through the process gas supplier and the purge gas supplier in a state where the source gas, the reaction gas, and the inert gas are supplied. Further, in the above step (c), the substrate is continuously passed through the process gas supplier and the purge gas supplier while the supply of the material gas and the reaction gas is interrupted. Further, in the above step (d), the substrate is continuously passed through the process gas supplier and the purge gas supplier while the supply of the material gas is interrupted. This is the case when the post-treatment gas is the same as the above-described reaction gas.

In the case of performing the ALD method, the gas injection unit is configured such that the gas injection unit is radially disposed by a plurality of gas supply units, and at least one of the gas supply units is for supplying the raw material. a raw material gas supply device of the gas, and at least one of the gas supply devices is a reaction gas supply device for supplying the reaction gas, and at least one of the gas supply devices is for supplying the inert gas Purge gas supply.

In this case, the step (b) is configured such that the substrate is continuously supplied through the material gas supplier, the purge gas supplier, the reaction gas supplier, and the like while supplying the material gas, the reaction gas, and the inert gas. A purge gas supply is carried out underneath. Further, in the above step (c), the substrate is continuously blown through the material gas supplier, the purge gas supplier, the reaction gas supplier, and the other while the supply of the material gas and the reaction gas is interrupted. Scan the way below the gas supply. Further, in the above step (d), the substrate is continuously passed through the material gas supplier, the purge gas supplier, the reaction gas supplier, and the other purge gas supplier while the supply of the material gas is interrupted. The way to proceed.

Preferably, the material gas supplier and the reaction gas supplier are arranged symmetrically with respect to the center of the gas injection portion, respectively. Further, preferably, the purge gas supplier is disposed between each of the material gas supplier and the reaction gas supplier.

At least one of a monoatomic metal thin film, a metal nitride thin film, and a metal oxide thin film can be deposited by the thin film deposition method. Examples of the above-mentioned monoatomic metal thin film include tantalum (Ta), titanium (Ti), tungsten (W), etc., and examples of the above metal nitride thin film include tantalum nitride (TaN) and titanium nitride (TiN) as their nitrides. ), tungsten nitride (WN), and the like. Further, examples of the metal oxide thin film include cerium oxide, zirconium oxide (ZrO), and the like. Of course, when two or more kinds of source gases are used, a binary metal thin film, a nitride thin film, and an oxide thin film can be formed. For example, in the case of the CVD method, two or more kinds of material gases may be supplied simultaneously by one process gas supplier. In this case, the process gas supplier is configured such that two or more kinds of material gases are mixed with each other in the process gas supplier and injected into the processing space. Further, in the case of the ALD method, two or more kinds of material gases may be sequentially supplied to the above-mentioned substrate by rotation of the substrate by one source gas supplier or by different material gas suppliers. The way on the substrate. That is, within the scope of the present invention, as long as a monoatomic metal thin film, a metal nitride thin film or a metal oxide thin film can be deposited, it is naturally possible to form a binary or more metal thin film by changing the gas ejecting portion, Nitride film and oxide film.

The above inert gas is argon (Ar) or nitrogen (N2). Preferably, the post-treatment gas is at least one of a nitriding gas containing nitrogen and an oxidizing gas containing oxygen. At this time, if the same gas is used for the reaction gas and the post-treatment gas, a metal nitride film or a metal oxide film can be deposited.

Preferably, the plurality of substrates are placed symmetrically with respect to the center of the substrate supporting portion to remove the difference between the different substrates to achieve uniformity.

In the past, when ALD or cyclic CVD which is a process method for improving the defects of CVD is realized in a single-wafer type chamber, a large productivity loss is inevitably caused. As a method capable of overcoming this loss of productivity, in addition to a deposition method in the form of a batch in which a plurality of substrates are simultaneously deposited, no other method has been proposed, and since the process capable of applying a furnace is extremely limited, it is as a passability. And the device is easy to adjust the process, and the mini-batch form is more appropriate.

In the present invention, in order to solve the problem of productivity, a plurality of substrates are placed on a rotating substrate supporting portion, and a film is deposited while spraying a process gas such as a source gas and a reactive gas and an inert gas through a gas injection portion located on the upper surface of the substrate. . Moreover, this method can improve the quality and productivity of the film to a level that cannot be achieved by conventional ALD or cyclic CVD.

The thin film deposition method according to the present invention can not only process a plurality of substrates at a time but also be different from the batch form, so that when a film having a low resistance such as a metal film is deposited, the rear surface of the substrate can be prevented from being deposited. When compared with the prior art single wafer type in which only one substrate is processed, deposition can be performed with high productivity.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various ways that are different from each other. This embodiment is only for fully revealing the present invention, and is intended to fully inform the present invention to those skilled in the art. The scope provided.

In the conventional ALD or cyclic CVD, since the gas supply is realized by operating the valve, not only the process is complicated, the valve operation is shortened due to frequent operation of the valve, and the maintenance cost of the equipment is increased. In order to improve such defects, the present invention utilizes a thin film deposition apparatus which can realize ALD or cyclic CVD without operating a valve. A schematic structure of such a thin film deposition apparatus is shown in Fig. 1. Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1 and is a configuration according to the first embodiment of the present invention.

Referring to FIGS. 1 and 2 , the thin film deposition apparatus 100 includes a reactor 110 , a substrate supporting unit 120 , and a gas injection unit 130 .

The reactor 110 includes a bottom portion 111, an outer wall portion 112, and an upper side plate 113. The bottom portion 111 forms the lower surface of the reactor 110, and the outer wall portion 112 is vertically elongated from the edge of the bottom portion 111 to form a closed curved shape. Further, a substrate transfer path (not shown) through which the substrate enters and exits is formed in the outer wall portion 112. The upper side plate 113 forms the upper surface of the reactor 110 and is detachably coupled to the upper surface of the outer wall portion 112. When the upper side plate 113 is coupled to the upper surface of the outer wall portion 112, a predetermined space is formed inside the reactor 110, and a thin film deposition space 140 is formed between the substrate supporting portion 120 and the gas ejecting portion 130, particularly along the upper side of the substrate supporting portion 120. . A closing member such as an O-ring (not shown) is interposed between the lower surface of the upper side plate 113 and the upper surface of the outer wall portion 112. Further, an exhaust port (not shown) for discharging unnecessary gas and particles remaining inside the reactor 110 is formed in the bottom portion 111 or the outer wall portion 112.

The substrate supporting portion 120 is provided inside the reactor 110 and includes a susceptor 121, a substrate placing portion 122, a shaft 123, and a heater (not shown). The susceptor 121 is rotatably disposed inside the reactor 110 in the shape of a disk. Two or more plural substrate placement portions 122 are formed on the upper surface of the susceptor 121, and the number of examples in the present embodiment is six. The substrate placement portion 122 is disposed along the circumferential direction of the upper surface of the substrate support portion 120, and the substrates W1 to W6 are placed on the respective substrate placement portions 122. One end of both ends of the shaft 123 is coupled to the lower surface of the susceptor 121, and the other end thereof passes through the reactor 110 and is connected to a rotary drive unit such as a motor (not shown). Thereby, the susceptor 121 rotates around the rotation center axis A shown in FIG. 1 as the shaft 123 rotates. Further, the shaft 123 is connected to a lifting drive unit that can raise and lower the susceptor 121. Examples of the elevation drive unit include a motor and a gear assembly (not shown). A heater (not shown) is provided at a lower portion of the susceptor 121 to adjust the temperatures of the substrates W1 to W6. Preferably, the substrates W1 to W6 are placed symmetrically with respect to the center of the substrate supporting portion 120 to eliminate the difference between the different substrates to achieve uniformity.

The gas injection portion 130 is coupled to the upper side plate 113 provided above the substrate support portion 120, and includes gas suppliers 151, 152, 154, and 155. The gas feeders 151, 152, and 154 are radially arranged along the circumferential direction of the upper side plate 113, and the number, positional relationship, and the like can be changed. The gas supplier 155 is a device that supplies a purge gas through a central portion of the substrate support portion 120 to prevent mixing with unreacted gas, functions as a shower head, and has a hole formed in the plate.

When the gas suppliers 151, 152, 153, 154, and 155 supply different gases in different regions, the substrates W1 to W6 placed on the susceptor 121 rotate while passing through the lower portions of the gas suppliers 151, 152, 154, and 155. These gas feeders are in contact with the respective gases. When the rotation of the substrate supporting portion 120 is controlled, the time during which the substrates W1 to W6 are in contact with the respective gases can be adjusted, and the film of a desired thickness can be controlled by adjusting the number of rotations.

In the present embodiment, the gas suppliers 151, 152, 154, and 155 are divided into a material gas supplier 151 for supplying a material gas such as a precursor to the substrate supporting portion 120, depending on the type of the supplied gas. a reaction gas supplier 152 for supplying a reaction gas which reacts with a central element of the precursor to generate a reactant to the substrate supporting portion 120; and a purge gas supplier 154, 155 for supplying an inert gas to the substrate On the support portion 120.

As shown in FIG. 2, the unit of the module unit concept having the same shape and size, in the present embodiment, ten units are arranged along the circumferential direction of the upper side plate 113, and two or more, for example, three adjacent ones are combined. The unit constitutes one material gas supplier 151, and four are combined to constitute one reaction gas supplier 152. In the case where a plurality of unit cells for supplying gas are arranged in succession or when a purge gas supplier is disposed between unit units for supplying gas, these may be regarded as one group and defined as one gas supplier. Further, when two or more kinds of material gases are used, two or more material gas suppliers may be included. Similarly, the reaction gas supply device may be two or more.

The material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154 are arranged along the circumferential direction of the upper side plate 113. In the present embodiment, one material gas supplier 151 and one reaction gas supplier 152 are disposed to face each other. A purge gas supplier 154 is disposed therebetween. The purge gas supplier 154 supplies an inert gas for purging a process gas such as a precursor and a reaction gas to the substrate support portion 120, and discharges unreacted gas remaining in the film formation space 140 to the outside of the reactor 110, thereby The case where the substrate support portion 120 is mixed with the unreacted gas is minimized.

As described above, the gas ejecting portion 130 is fixed, and the substrate supporting portion 120 is provided to be rotatable, so that when the substrate supporting portion 120 is relatively rotated with respect to the gas ejecting portion 130, the substrates W to W6 placed on the substrate supporting portion 120 are sequentially It passes through each of the gas supplier material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154. At this time, in the substrate W1, the raw material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154 are supplied in the order of the material gas → inert gas → reaction gas → inert gas, thereby realizing ALD.

Thus, when the thin film deposition apparatus 100 illustrated in Fig. 1 is utilized, ALD can be realized without operating the valve. Moreover, since not only a plurality of substrates can be processed at one time, but also in a different manner from the batch form, when depositing a film having a low resistance value such as a metal film, there is no need to worry about contamination of the rear surface of the substrate, and only one can be processed. When the conventional single wafer type comparison of the substrate is performed, deposition can be performed with higher productivity.

Fig. 3 is a flow chart showing a thin film deposition method using the device structure of Fig. 2.

First, referring to step S1 of FIG. 3, a plurality of substrates W1 to W6 are placed on the substrate placement portion 122.

Next, the rotation speed of the substrate supporting portion 120 is accelerated to a predetermined RPM (step S2). When the substrate supporting portion 120 rotates, the substrate supporting portion 120 and the gas ejecting portion 130 are relatively rotated, and the source gas and the reaction gas are supplied to the substrate supporting portion 120 by the gas ejecting portion 130, thereby being on the substrates W1 to W6. A film is deposited (step S3). In this step, the substrates W1 to W6 are continuously passed through the material gas supplier 151, the purge gas supplier 154, the reaction gas supplier 152, and the other in a state where the material gas, the reaction gas, and the inert gas are supplied to the gas injection unit 130. This is accomplished by purging the gas supply 154 below. The substrates W1 to W6 are supplied by the material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154 in the order of the material gas → inert gas → reaction gas → inert gas, and realize ALD. The film is deposited by, for example, the ALD method as described above, for example, by rotating the substrate supporting portion 120 a second time (for example, 48 sec is required if it is rotated four times at 5 RPM). The inert gas is argon (Ar) or nitrogen (N2).

A single atom metal thin film, a metal nitride thin film or a metal oxide thin film can be deposited by the thin film deposition method as described above. Examples of the above-mentioned monoatomic metal thin film include tantalum (Ta), titanium (Ti), tungsten (W), etc., and examples of the above metal nitride thin film include tantalum nitride (TaN) and titanium nitride (TiN) as their nitrides. ), tungsten nitride (WN), and the like. Further, examples of the metal oxide thin film include cerium oxide, zirconium oxide (ZrO), and the like. Of course, when two or more kinds of source gases are used, a binary metal thin film, a nitride thin film, and an oxide thin film can be formed. The two or more kinds of material gases may be supplied in a manner of being simultaneously supplied by one material gas supplier or sequentially supplied from a material gas supplier different from each other.

Then, the substrate supporting portion 120 and the gas ejecting portion 130 are rotated relative to each other while the substrate supporting portion 120 is rotated, and the inert gas is supplied to the substrate supporting portion 120 by the gas ejecting portion 130 to perform purging (step S4). . In this step, the substrates W1 to W6 are continuously passed through the source gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154 by interrupting the supply of the material gas and the reaction gas and continuing to supply the inert gas. This is achieved, for example, by rotating the substrate support portion 120 b times.

Then, as the substrate supporting portion 120 rotates, the substrate supporting portion 120 and the gas ejecting portion 130 are relatively rotated, and the post-processing gas is supplied to the substrate processing portion 120 by the gas ejecting portion 130, thereby performing post-processing (step S5). ). In this step, the reaction gas and the inert gas are supplied while the supply of the material gas is interrupted, and the substrates W1 to W6 are continuously passed through the material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154. This is achieved, for example, by rotating the substrate supporting portion 120 by c times. In the case of depositing a metal nitride thin film, the post-treatment gas is preferably a nitriding gas containing nitrogen, which may be the same gas as the reactive gas. In the case of depositing a metal oxide thin film, the post-treatment gas is preferably an oxidizing gas containing oxygen, which may be the same gas as the reactive gas. For example, as the oxygen-containing gas, a gas such as oxygen or ozone can be used.

The cycle consisting of the above steps S3 to S5 is repeated at least once until a film of a desired thickness is deposited (step S6).

In the thin film deposition method using the device structure as described above, the so-called purge efficiency in which the reaction by-product gas in which the thin film has been formed is pushed to the outside of the substrates W1 to W6 is substantially high on the substrates W1 to W6. This is because the substrates W1 to W6 are rotated instead of being in a stationary state.

For example, after the film is formed by rotating a time, and then, in order to minimize the impurities contained in the film, an additional method is employed in which the process gas is turned off after the step S3 of the film deposition step. For example, step S4 is performed in which b-rotation is performed and only the inert gas is injected while purging. Next, in order to remove the impurities in the film which grew during the previous a-rotation, the post-process gas was ejected while rotating c times during the step S5.

With this method, the thin film deposition apparatus of the above-described small batch type can be effectively utilized to further maximize the quality of the film. In other words, after the ALD is rotated a time and the film is grown, b-sweep rotation is performed, and during the b-rotation, the rotation of the film is stopped, and instead the centrifugal force of the rotation and the urging force of the inert gas are used. The reaction by-product gas contained in the film is smoothly discharged to the outside of the substrate. In particular, in practice, the semiconductor element pattern includes pores having a deep aspect ratio, and it becomes more difficult to smoothly discharge the reaction by-product gas generated inside the pores as the element is ultrafinely miniaturized. Similarly, it is more difficult to deposit at various locations inside the hole while ensuring excellent step coverage.

Therefore, one of the factors capable of improving the step coverage by the above-described thin film deposition apparatus is to rotate the substrate, and when performing one rotation, in addition to deposition, blowing by the inert gas supplier 154 disposed on the upper surface of the substrate The sweep function, but further, the factor that maximizes the purge efficiency is that only b rotations of step S4 of the purge are performed. Next, the post-treatment gas is sprayed while being rotated c times during the post-treatment step, thereby making the film more nitrided while discharging the impurities in the film to the lowest level of the final.

Fig. 4 is a cross-sectional view taken along line II-II of Fig. 1 showing the structure of the second embodiment.

Referring to Fig. 4, the gas injection unit 130 includes a material gas supplier 151 having the same size, a reaction gas supplier 152, and a purge gas supplier 154.

The material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154 are configured to have the same size, and each of the material gas supplier 151 and the material gas supplier 151 and the reaction gas supplier 152 face each other. A purge gas supplier 154 is provided between the reaction gas suppliers 152. When the substrate supporting portion 120 relatively rotates with respect to the gas ejecting portion 130, the substrates W1 to W6 placed on the substrate supporting portion 120 sequentially pass through the material gas supplier 151, the reaction gas supplier 152, and the lower portion of the purge gas supplier 154. . At this time, the raw material gas supplier 151, the reaction gas supplier 152, and the purge gas supplier 154 are supplied in the order of the material gas → inert gas → reaction gas → inert gas, and the device structure is used in accordance with the third The flow chart illustrated in the figure is capable of depositing a thin film in an ALD manner.

Fig. 5 is a cross-sectional view taken along line II-II of Fig. 1 showing the structure of the third embodiment.

Referring to Fig. 5, the gas injection portion 130 includes gas suppliers 151', 154, 155. The gas suppliers 151', 154 are radially arranged along the circumferential direction of the upper side plate 113, and the gas supplier 151' is a process gas supplier for simultaneously supplying the material gas and the reaction gas, and the gas suppliers 154, 155 are used. A purge gas supply for supplying an inert gas. Although the embodiment in which the two process gas suppliers 151' are disposed to face each other and the purge gas supplier 154 is disposed therebetween, the process gas supplier 151' and the purge gas supplier 154 are respectively one or more. The number can be changed.

When the substrate supporting portion 120 relatively rotates with respect to the gas ejecting portion 130, the substrates W1 to W6 placed on the substrate supporting portion 120 sequentially pass through the respective gas supplier process gas supplier 151' and the lower portion of the purge gas supplier 154. At this time, since the source gas and the reaction gas are simultaneously supplied to the substrates W1 to W6, thin film deposition by the CVD method can be realized.

With the structure of the apparatus, a film can be deposited in accordance with the flow chart shown in FIG. Thereby, cyclic CVD which performs a post-treatment step after film deposition can be realized.

In step S3 of Fig. 3, the substrates W1 to W6 are continuously passed through the process gas supplier 151' and the purge gas supplier 154 in a state where the source gas, the reaction gas, and the inert gas are supplied. Further, in step S4, the substrates W1 to W6 are continuously passed through the process gas supplier 151' and the purge gas supplier 154 in a state where the supply of the material gas and the reaction gas is interrupted. Further, in step S5, the substrates W1 to W6 are continuously passed through the process gas supplier 151' and the purge gas supplier 154 in a state where the supply of the material gas is interrupted. This is the case when the post-treatment gas is the same as the reaction gas.

The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the preferred embodiments of the present invention, and the present invention belongs to the present invention without departing from the technical scope of the present invention as claimed in the appended claims. A person skilled in the art can implement various modifications, and such modifications are also within the scope of the patent application.

Industrial availability

According to the thin film deposition method of the present invention, a film capable of realizing ALD or cyclic CVD can be deposited without operating a valve, and the quality and productivity of the film can be improved to a level that cannot be attained by ALD or cyclic CVD in the prior art. Further, since a plurality of substrates can be processed at one time, productivity can be improved. Thus, the present invention will improve industrial applicability.

100. . . Thin film deposition device

110. . . reactor

111. . . bottom

112. . . Outer wall

113. . . Upper side panel

120. . . Substrate support

121. . . Pedestal

122. . . Substrate placement

123. . . axis

130. . . Gas injection department

140. . . Thin film deposition space

151. . . Raw material gas supplier

151’. . . Process gas supplier

152. . . Reaction gas feeder

154, 155. . . Purge gas supplier

A. . . Rotation center axis

W1～W6. . . Substrate

S1, S2, S3, S4, S5, S6. . . step

Fig. 1 is a schematic view showing a schematic configuration of a thin film deposition apparatus used in the present invention;

Figure 2 is a cross-sectional view showing the first embodiment of the present invention taken along the line II-II of Figure 1;

Figure 3 is a flow chart showing a method of depositing a thin film on a substrate by using the device structure of Figure 2;

Figure 4 is another cross-sectional view for carrying out the first line II-II of the second embodiment of the present invention;

Fig. 5 is still another cross-sectional view for carrying out the first line II-II of the third embodiment of the present invention.

S1, S2, S3, S4, S5, S6. . . step

Claims (10)

A thin film deposition method is a method for depositing a thin film by using a thin film deposition apparatus, the thin film deposition apparatus comprising: a substrate supporting portion disposed inside a reactor and having a plurality of substrate placing portions for a plurality of substrates to be placed And a gas ejecting portion provided on an upper portion of the substrate supporting portion to supply at least one gas to the substrate supporting portion; the substrate supporting portion and the gas ejecting portion being rotatably disposed, the thin film deposition method, The method includes the steps of: (a) placing the substrates in the substrate placing portions; and the step (b), while rotating the substrate supporting portion and the gas injecting portion, the raw material gas and the gas injecting portion The reaction gas from which the raw material gas is reacted is supplied to the substrate supporting portion to deposit a thin film on the substrate; and in the step (c), the substrate supporting portion and the gas ejecting portion are relatively rotated while the gas ejecting portion is used Supplying an inert gas to the substrate supporting portion to perform purging; and step (d), causing the substrate supporting portion and the gas to be ejected The post-processing is performed by supplying the post-treatment gas to the substrate supporting portion by the gas ejecting portion while rotating relative to each other; wherein the step (b) is based on the chemical gas by simultaneously supplying the raw material gas and the reactive gas. The phase deposition method is performed; and the step (d) interrupts the supply of the material gas, and at least one of a nitriding gas containing an N element and an oxygen-containing gas is used as the post-treatment gas. The thin film deposition method according to claim 1, wherein the cycle consisting of the step (b) to the step (d) is repeated at least once. The thin film deposition method according to claim 1, wherein the step (a) and the step (b) further includes a step of accelerating a rotational speed of the substrate supporting portion. The thin film deposition method according to claim 1, wherein the gas injection portion is configured by a plurality of gas suppliers in a radial shape, wherein at least one of the gas supply devices One is at least one process gas supplier for supplying the material gas and the reaction gas through the same pipe at the same time, at least one of the gas suppliers is at least one purge gas supplier for supplying the inert gas . The thin film deposition method according to claim 4, wherein the step (b) causes the substrates to be continuously passed through the process by supplying the raw material gas, the reactive gas, and the inert gas. This is accomplished by means of a gas supply and a lower portion of the purge gas supply. The thin film deposition method according to claim 5, wherein the step (c) causes the substrates to continuously pass through the process gas supplier by interrupting the supply of the material gas and the reaction gas. This is accomplished in a manner that is below the purge gas supply. The thin film deposition method according to claim 5, wherein the step (d) causes the substrate to continuously pass through the process gas supplier and the purge gas by interrupting the supply of the material gas. The way below the feeder is achieved. The thin film deposition method according to claim 1, wherein the film is at least one of a monoatomic metal film, a metal nitride film, and a metal oxide film. The thin film deposition method according to claim 1, wherein the inert gas is argon or nitrogen. The thin film deposition method according to claim 1, wherein the substrates are placed symmetrically with respect to a center of the substrate supporting portion.