WO2012102495A3 - Thin film vapor deposition method - Google Patents

Thin film vapor deposition method Download PDF

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Publication number
WO2012102495A3
WO2012102495A3 PCT/KR2012/000075 KR2012000075W WO2012102495A3 WO 2012102495 A3 WO2012102495 A3 WO 2012102495A3 KR 2012000075 W KR2012000075 W KR 2012000075W WO 2012102495 A3 WO2012102495 A3 WO 2012102495A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate support
support portion
thin film
gas
vapor deposition
Prior art date
Application number
PCT/KR2012/000075
Other languages
French (fr)
Korean (ko)
Other versions
WO2012102495A2 (en
Inventor
박영훈
윤원준
이기훈
Original Assignee
주식회사 원익아이피에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 원익아이피에스 filed Critical 주식회사 원익아이피에스
Publication of WO2012102495A2 publication Critical patent/WO2012102495A2/en
Publication of WO2012102495A3 publication Critical patent/WO2012102495A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

Provided is a thin film vapor deposition method capable of vapor depositing a thin film with increased productivity over a conventional ALD or cyclic CVD. According to the present invention, the thin film vapor deposition method uses a thin film vapor deposition apparatus comprising: a substrate support portion comprising a plurality of substrate mounting portions for mounting substrates and provided inside a reactor; and a gas spraying portion for supplying one or more types of gases to the substrate support portion, provided at the upper portion of the substrate support portion. The thin film vapor deposition method comprises the following steps: (a) mounting a plurality of substrates on the substrate support portion; (b) supplying a raw material gas and a reaction gas to be reacted with the raw material gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion to vapor deposit a thin film on the substrates; (c) supplying an inert gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion, for purging; and (d) supplying a post-treatment gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion, for post-treatment.
PCT/KR2012/000075 2011-01-28 2012-01-04 Thin film vapor deposition method WO2012102495A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110008732A KR101804127B1 (en) 2011-01-28 2011-01-28 Method of depositing thin film
KR10-2011-0008732 2011-01-28

Publications (2)

Publication Number Publication Date
WO2012102495A2 WO2012102495A2 (en) 2012-08-02
WO2012102495A3 true WO2012102495A3 (en) 2012-11-22

Family

ID=46581242

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000075 WO2012102495A2 (en) 2011-01-28 2012-01-04 Thin film vapor deposition method

Country Status (3)

Country Link
KR (1) KR101804127B1 (en)
TW (1) TWI576461B (en)
WO (1) WO2012102495A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102264257B1 (en) 2014-12-30 2021-06-14 삼성전자주식회사 Method of forming a layer band method of manufacturing a semiconductor device using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060091908A (en) * 2005-02-16 2006-08-22 주식회사 하이닉스반도체 Thin film deposition method
KR20090057665A (en) * 2007-12-03 2009-06-08 주식회사 아이피에스 Method for depositing thin film containing metal
KR20100066874A (en) * 2008-12-10 2010-06-18 주식회사 아이피에스 Apparatus for treatment of plural substrates
KR20100132779A (en) * 2009-06-10 2010-12-20 주성엔지니어링(주) Method for manufacturing thin film and apparatus for the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100458982B1 (en) * 2000-08-09 2004-12-03 주성엔지니어링(주) Semiconductor device fabrication apparatus having rotatable gas injector and thin film deposition method using the same
JP2004006699A (en) * 2002-04-25 2004-01-08 Hitachi Kokusai Electric Inc Manufacturing method for semiconductor device, and substrate processing apparatus
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060091908A (en) * 2005-02-16 2006-08-22 주식회사 하이닉스반도체 Thin film deposition method
KR20090057665A (en) * 2007-12-03 2009-06-08 주식회사 아이피에스 Method for depositing thin film containing metal
KR20100066874A (en) * 2008-12-10 2010-06-18 주식회사 아이피에스 Apparatus for treatment of plural substrates
KR20100132779A (en) * 2009-06-10 2010-12-20 주성엔지니어링(주) Method for manufacturing thin film and apparatus for the same

Also Published As

Publication number Publication date
KR101804127B1 (en) 2018-01-10
TWI576461B (en) 2017-04-01
WO2012102495A2 (en) 2012-08-02
KR20120087503A (en) 2012-08-07
TW201231714A (en) 2012-08-01

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