JPH03248427A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH03248427A JPH03248427A JP4611190A JP4611190A JPH03248427A JP H03248427 A JPH03248427 A JP H03248427A JP 4611190 A JP4611190 A JP 4611190A JP 4611190 A JP4611190 A JP 4611190A JP H03248427 A JPH03248427 A JP H03248427A
- Authority
- JP
- Japan
- Prior art keywords
- supply
- silicon nitride
- growth
- passed
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- ICSWLKDKQBNKAY-UHFFFAOYSA-N 1,1,3,3,5,5-hexamethyl-1,3,5-trisilinane Chemical compound C[Si]1(C)C[Si](C)(C)C[Si](C)(C)C1 ICSWLKDKQBNKAY-UHFFFAOYSA-N 0.000 claims 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract description 22
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract 3
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Abstract
PURPOSE:To obtain silicon nitride films having higher quality, high resistance to oxidation, and small leakage currents, by stopping monosilane or dichlorosilane supply in the middle of the growth of the silicon nitride films by reduced-pressure chemical vapor growth, and by supplying only ammonia. CONSTITUTION:The maximum flow R1 of dichlorosilane (SiH2Cl2) is 25sccm, and that of R2 of ammonia (NH3) is 1.3slm. At time T1 both values are opened to start the growth of silicon nitride films. At time point T2 when it has grown to 35Angstrom and 7min. have passed, the valve for SiH2Cl2 is closed. Here supply of only NH3 improves film quality. At T3 when 2min. have passed after that the valve for SiH2Cl2 is opened again to start growing, and at T4, 7min. after, the supply is stopped again to conduct the second film quality improvement. At T5 when 2min. have passed, the supply is resumed. At T6 when 6min. have passed, the film has grown to 100Angstrom already. But for the improvement of the film quality of the uppermost layer, only the supply of SiH2Cl2 is stopped without stopping the supply of NH3. And at T7 when 2min. have passed, the supply of NH3 is stopped to finish the growing process.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、モノシランあるいはジクロルシランおよびア
ンモニアを原料ガスとして減圧化学気相成長法によりシ
リコン窒化膜を成長させる工程を有する半導体装置の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, which includes a step of growing a silicon nitride film by low pressure chemical vapor deposition using monosilane or dichlorosilane and ammonia as source gases.
［従来の技術］
ＣＶＤ法によるシリコン窒化膜は、ダイナミック・ラン
ダム・アクセス・メモリー（ＤＲＡＭ）の容量絶縁膜の
構成要素の一つとして用いられてきた。[Prior Art] A silicon nitride film produced by the CVD method has been used as one of the constituent elements of a capacitive insulating film of a dynamic random access memory (DRAM).
従来のシリコン窒化膜の成長方法としては、モノシラン
（ＳｉＨ４）あるいはジクロルシラン（ＳＮ（２ＣＩ２
）およびアンモニア（ＮＨ３）を原料ガスとして、減圧
ＣＶＤ法により成長させる方法かある。この方法におい
て、成長の過程において、原料ガスであるＳｉＨ４ある
いは５ｉＨ２Ｃ１２およびＮＨ３は常に連続して一定流
量で流される。Conventional methods for growing silicon nitride films include monosilane (SiH4) or dichlorosilane (SN (2CI2)).
) and ammonia (NH3) as raw material gases, there is a method of growing by low pressure CVD method. In this method, during the growth process, the raw material gases SiH4 or 5iH2C12 and NH3 are always continuously flowed at a constant flow rate.
［発明か解決しようとする課題］
上述した従来の方法により得られたシリコン窒化膜はＤ
ＲＡＭの容量膜として通常シリコン酸化膜／シリコン窒
化膜／シリコン酸化膜の３層構造、あるいは、シリコン
酸化膜／シシリコン窒化膜の２層構造で用いられる。[Problem to be solved by the invention] The silicon nitride film obtained by the conventional method described above is D
A RAM capacitor film is usually used in a three-layer structure of silicon oxide film/silicon nitride film/silicon oxide film or in a two-layer structure of silicon oxide film/silicon nitride film.
近来、半導体装置の大きさが縮小するに伴い、ＤＲＡＭ
の膜厚も必然的に薄くしなけねればならなくなった。し
かし、シリコン窒化膜は、その膜厚を薄くしていくと、
リーク電流の増加、耐酸化性の低下などの問題が生じて
くる。これらの問題を回避するためには、シリコン窒化
膜の膜質を向上させる必要がある。In recent years, as the size of semiconductor devices has decreased, DRAM
The film thickness also had to be made thinner. However, as the silicon nitride film becomes thinner,
Problems such as an increase in leakage current and a decrease in oxidation resistance arise. In order to avoid these problems, it is necessary to improve the film quality of the silicon nitride film.
般にシリコン窒化膜においては、化学量論比（Ｓｉ：Ｎ
−３：４）よりもシリコンか過多になると、膜質か劣化
する性質がある。従来のシリコン窒化膜の成長方法にお
いて膜質を向上させる方法としてＮＨ３／ＳｉＨ４ある
いはＮＨ３／ ５ｉＨ２Ｃ１２の流量比を大きくするこ
とにより、成長されるシリコン窒化膜中のＳｉとＮの化
学量論比からのずれを少なくする方法かある。しかしこ
の方法では成長圧力を一定に保つため５ｊＨ４＋ＮＨ３
あるいは５ｉＨ２Ｃ１２＋ ＮＨ３の総流量を一定に保
つ必要かあり、シリコン窒化膜の膜質を向上させるため
には必然的にＳｉＨ４あるいは５ｉＨ２Ｃ１２の流量を
減少させなければならない。Generally, in silicon nitride films, the stoichiometric ratio (Si:N
-3:4) If there is too much silicon, the film quality tends to deteriorate. In the conventional silicon nitride film growth method, the film quality can be improved by increasing the flow rate ratio of NH3/SiH4 or NH3/5iH2C12, thereby reducing the deviation from the stoichiometric ratio of Si and N in the grown silicon nitride film. Is there a way to reduce it? However, in this method, in order to keep the growth pressure constant, 5jH4 + NH3
Alternatively, it is necessary to keep the total flow rate of 5iH2C12+NH3 constant, and in order to improve the film quality of the silicon nitride film, it is necessary to reduce the flow rate of SiH4 or 5iH2C12.
ＳｉＨ４あるいは５ｉＨ２Ｃ１２の流量を減少させるこ
とにより、シリコン窒化膜の成長速度は低下し、スルー
ブツトか低下するという欠点がある。By reducing the flow rate of SiH4 or 5iH2C12, the growth rate of the silicon nitride film decreases, resulting in a decrease in throughput.
本発明は上記欠点のない半導体装置の製造方法を提供す
るものである。The present invention provides a method for manufacturing a semiconductor device that does not have the above drawbacks.
［課題を解決するための手段コ
本発明の半導体装置の製造方法は、減圧化学気相成長法
によるシリコン窒化膜の成長の途中でモノシランあるい
はジクロルシランの供給を停止し、アンモニアのみを供
給する工程を含む。[Means for Solving the Problems] The method for manufacturing a semiconductor device of the present invention includes a step of stopping the supply of monosilane or dichlorosilane and supplying only ammonia during the growth of a silicon nitride film by low pressure chemical vapor deposition. include.
「実施例］
次に、本発明の実施例について図面を参照して説明する
。``Example'' Next, an example of the present invention will be described with reference to the drawings.
第１図は本発明のシリコン窒化膜の成長方法の第１の実
施例における５ｉＨ２Ｃ１２およびＮＨ３を用いた場合
のガスフローを示すタイムチャートである。FIG. 1 is a time chart showing the gas flow when 5iH2C12 and NH3 are used in the first embodiment of the method for growing a silicon nitride film of the present invention.
成長温度７５０℃、５ｉＨ２Ｃｈ流ｉ ２５５ｃｃｔｎ
、ＮＨ３流量１．３５１ｍ、成長圧力０．２ Ｔｏｒｒ
において、シリコン窒化膜の成長速度はおよそ５人
／ｍｉｎである。本発明におけるシリコン窒化膜の成長
方法てシリコン窒化膜の膜質を改善しようとする場合、
この成長条件でＮＨ３のみを２分間供給することにより
、約４０人程度のシリコン窒化膜の膜質を改善すること
かできる。よって、１００人のシリコン窒化膜を成長さ
せる場合には、成長途中で２回、ＮＨ３のみを供給する
工程を行なうことが必要である。Growth temperature 750℃, 5iH2Ch flow i 255cctn
, NH3 flow rate 1.351 m, growth pressure 0.2 Torr
In this case, the growth rate of the silicon nitride film is approximately 5 people/min. When trying to improve the film quality of a silicon nitride film using the method of growing a silicon nitride film according to the present invention,
By supplying only NH3 for 2 minutes under these growth conditions, the film quality of the silicon nitride film can be improved by about 40 times. Therefore, when growing a silicon nitride film for 100 people, it is necessary to perform the step of supplying only NH3 twice during the growth.
次に、第１図を参照して詳細に説明する。この場合、横
軸は時間、縦軸はガスの流量を示す。Next, a detailed explanation will be given with reference to FIG. In this case, the horizontal axis shows time and the vertical axis shows gas flow rate.
本実施例において５ｉＨ２Ｃ１２の最大流量Ｒ１は２５
ｓｅｃｍ、 ＮＨ３の最大流量Ｒ２は１．３ ｓｌｍ
である。時間Ｔ、において、５ｉＨ２（：１２およびＮ
Ｈ３のバルブを開け、成長を開始する。シリコン窒化膜
か３５人成長したＩ２の時点すなわちＴ１から７分経過
した時点て５ｉＨ２１１１：Ｉ２のバルブを閉じる。こ
こでＮＨ３のみか供給されることにより成長したシリコ
ン窒化膜の膜質か改善される。Ｉ２から２分経過したＩ
３て再びＳｊＨ，Ｃ１□のバルブを開け、シリコン窒化
膜の成長を開始する。Ｉ３か６７分後のＩ４に再び５ｉ
Ｈ２Ｃ１２の供給を止め、２度めの膜質改善を行ない、
Ｉ４から２分経過したＩ５で５ｉＨ２Ｃ１２の供給を再
開する。Ｉ５から６分経過したＩ６の時点で既にシリコ
ン窒化膜は１００人成長しているが、最上層のシリコン
窒化膜の膜質の改善を行なうためにＩ６の時点ではＮＨ
３の供給は止めずに５ｉＨ２Ｃ１２の供給のみを停止す
る。Ｉ６から２分経過したＩ７でＮＨ３の供給を停止し
、シリコン窒化膜の成長工程を終了する。In this example, the maximum flow rate R1 of 5iH2C12 is 25
secm, maximum flow rate R2 of NH3 is 1.3 slm
It is. At time T, 5iH2(:12 and N
Open the H3 valve and start growing. At the point I2 when 35 silicon nitride films have grown, that is, after 7 minutes have elapsed from T1, the valve 5iH2111:I2 is closed. By supplying only NH3 here, the quality of the grown silicon nitride film is improved. 2 minutes have passed since I2
3, the valves SjH and C1□ are opened again to start growing the silicon nitride film. 5i again on I3 or 67 minutes later on I4
Stop the supply of H2C12, perform a second film quality improvement,
The supply of 5iH2C12 is restarted at I5, two minutes after I4. At the time of I6, which is 6 minutes after I5, 100 silicon nitride films have already grown, but in order to improve the film quality of the top layer silicon nitride film, at the time of I6, the NH
Only the supply of 5iH2C12 is stopped without stopping the supply of 3. At I7, two minutes after I6, the supply of NH3 is stopped, and the silicon nitride film growth process is completed.
第２図は本発明の第２の実施例の５ｉＨ２Ｃ１２゜ＮＨ
３のガス・フローを示すタイムチャートである。Figure 2 shows 5iH2C12°NH of the second embodiment of the present invention.
3 is a time chart showing the gas flow of No. 3.
本実施例においては、５ｉＨ２Ｃ１２を短かい周期で供
給・停止をくり返すことを特徴としている。This embodiment is characterized in that 5iH2C12 is repeatedly supplied and stopped at short intervals.
第１の実施例と同一条件、即ち、成長温度７５０℃、５
ｉＨ２（：１２流量２５ ｓｃｃｍ、 ＮＨ３流ｉ１．
３ｓＪｍ、成長圧力０．２ Ｔｏｒｒにおいて、例えば
−周期中での５ｉＨ２Ｃ１２供給期間ｔ、を１００秒、
５ｉ８２Ｃ１２停止期間ｔ２を２０秒とすると、実効的
な成長速度はとなる。Same conditions as the first example, ie, growth temperature 750°C, 5
iH2 (:12 flow rate 25 sccm, NH3 flow i1.
At 3 sJm and a growth pressure of 0.2 Torr, for example, the 5iH2C12 supply period t during the cycle is 100 seconds,
When the 5i82C12 stop period t2 is 20 seconds, the effective growth rate is as follows.
Ｉ８において５ｉＨ２Ｇ１２およびＮＨ３の供給を開始
する。Ｉ８からｔ、＝１００秒経過したＩ９において５
ｉＨ２Ｃ１２の供給を停止する。ｔ２＝２０秒後即ちＴ
、。の時点で再び５ｉＨ２ＧＩ２の供給を開始する。以
後ｔ５秒の５ｉＨ２ｆｌ：ｌ。の供給、ｔ２秒の５ｉＨ
２Ｃ１２の停止を繰り返す。Ｔ８から２４分経過した時
点Ｔ１、で１００人のシリコン窒化膜の成長が完了する
ので、５ｉＨ２Ｃ１２の供給を停止し、そのｔ２秒後の
ＴＩ２において、ＮＨ３の供給を停止し、シリコン窒化
膜の成長工程を完了する。Start supplying 5iH2G12 and NH3 at I8. 5 at I9 after t,=100 seconds have passed since I8
Stop supplying iH2C12. t2=20 seconds later, T
,. At the time point, the supply of 5iH2GI2 is started again. After that, 5iH2fl:l for t5 seconds. supply, 5iH for t2 seconds
Repeat stopping of 2C12. At time T1, 24 minutes after T8, the growth of 100 silicon nitride films is completed, so the supply of 5iH2C12 is stopped, and at TI2, 2 seconds after that, the supply of NH3 is stopped and the growth of the silicon nitride film is completed. Complete the process.
本実施例においては、５ｉＨ２Ｃ１２の供給・停止を短
かい周期で行なうために、より均一なシリコン窒化膜を
得ることかできる。In this embodiment, since 5iH2C12 is supplied and stopped at short intervals, a more uniform silicon nitride film can be obtained.
［発明の効果］
以上説明したように本発明は、ＳｉＨ４あるいは５ｉＨ
２Ｃ１２およびＮＨ３を原料として減圧ＣＶＤ法により
シリコン窒化膜を成長させる方法において、成長途中に
ＳｉＨ４あるいは５ｉＨ２Ｃ１２の供給を停止しＮＨ３
のみを供給する工程を有することにより、シリコン窒化
膜の膜質の向上が計られ、耐酸化性に優れ、リーク電流
の小さなシリコン窒化膜を得ることができ、半導体装置
の歩留りの向上およびチップサイズの縮小が可能となる
効果がある。[Effects of the Invention] As explained above, the present invention provides SiH4 or 5iH
In a method of growing a silicon nitride film by low pressure CVD using 2C12 and NH3 as raw materials, the supply of SiH4 or 5iH2C12 is stopped during the growth, and NH3
By having a process for supplying only silicon nitride, the film quality of the silicon nitride film is improved, and a silicon nitride film with excellent oxidation resistance and low leakage current can be obtained, which improves the yield of semiconductor devices and reduces chip size. This has the effect of making it possible to reduce the size.
第１図は本発明の半導体装置の製造方法の第１の実施例
のガスフローを示すタイムチャート、第２図は本発明の
第２の実施例のガスフローを示すタイムチャートである
。
Ｒ１・・・５ｉＨ２ＣＩ、、の最大流量、Ｒ２・・・Ｎ
Ｈ３の最大流量、
Ｔ１・・・第１の成長開始時間、
Ｔ２・・・第１の成長終了時間、
Ｔ３・・・第２の成長開始時間、
Ｔ４・・・第２の成長終了時間、
Ｔ、・・・第３の成長開始時間、
Ｔ６・・・第３の成長終了時間、
Ｔ７・・・成長工程完了時間、
Ｔ８・・・成長開始時間、
Ｔ９・・・成長終了時間、
ＴＩＯ・・・窒化処理終了時間、
ｔ、・・・５ｉＨ２（：１２供給期間、ｔ２・・・５ｉ
Ｈ２Ｃ１２停止期間。FIG. 1 is a time chart showing a gas flow in a first embodiment of the method for manufacturing a semiconductor device of the present invention, and FIG. 2 is a time chart showing a gas flow in a second embodiment of the present invention. Maximum flow rate of R1...5iH2CI, R2...N
Maximum flow rate of H3, T1...first growth start time, T2...first growth end time, T3...second growth start time, T4...second growth end time, T ,...Third growth start time, T6...Third growth end time, T7...Growth step completion time, T8...Growth start time, T9...Growth end time, TIO...・Nitriding treatment end time, t,...5iH2(:12 supply period, t2...5i
H2C12 suspension period.
Claims (1)
アを原料ガスとして減圧化学気相成長法によりシリコン
窒化膜を成長させる工程を有する半導体装置の製造方法
において、 前記シリコン窒化膜の成長の途中でモノシランあるいは
シクロルシランの供給を停止し、アンモニアのみを供給
する工程を含むことを特徴とする半導体装置の製造方法
。[Claims] 1. A method for manufacturing a semiconductor device comprising a step of growing a silicon nitride film by low-pressure chemical vapor deposition using monosilane or dichlorosilane and ammonia as raw material gases, wherein monosilane is grown during the growth of the silicon nitride film. Alternatively, a method for manufacturing a semiconductor device comprising a step of stopping the supply of cyclosilane and supplying only ammonia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4611190A JP2936623B2 (en) | 1990-02-26 | 1990-02-26 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4611190A JP2936623B2 (en) | 1990-02-26 | 1990-02-26 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03248427A true JPH03248427A (en) | 1991-11-06 |
| JP2936623B2 JP2936623B2 (en) | 1999-08-23 |
Family
ID=12737886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4611190A Expired - Fee Related JP2936623B2 (en) | 1990-02-26 | 1990-02-26 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2936623B2 (en) |
Cited By (274)
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|---|---|---|---|---|
| JP2009004786A (en) * | 2007-06-21 | 2009-01-08 | Asm Internatl Nv | Method for depositing thin film by mixed pulsed cvd and ald |
| JP2011054968A (en) * | 2009-09-03 | 2011-03-17 | Asm Japan Kk | METHOD FOR FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N COMBINATION BY PECVD |
| US9139904B2 (en) | 2012-12-18 | 2015-09-22 | Tokyo Electron Limited | Thin film forming method |
| US10312129B2 (en) | 2015-09-29 | 2019-06-04 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
| US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
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