US20090186571A1 - Air ventilation system - Google Patents
Air ventilation system Download PDFInfo
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- US20090186571A1 US20090186571A1 US12/017,705 US1770508A US2009186571A1 US 20090186571 A1 US20090186571 A1 US 20090186571A1 US 1770508 A US1770508 A US 1770508A US 2009186571 A1 US2009186571 A1 US 2009186571A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Definitions
- the invention relates to an automated air ventilation system for use with enclosures such as those used in semiconductor manufacturing and processing. More particularly, the device of the present invention comprises an automated ventilation system that enables an enclosure to only have the maximum flow rate when desired, for example, based on the presence or absence of one or more conditions that require a high flow rate.
- Gasses that are highly explosive, toxic, corrosive, or otherwise harmful. These gasses are typically found in numerous machines and processing tools that include enclosures that are used (in part) to prevent the gasses from escaping into the immediate working environment and causing harm. Allowing these gasses to build up within the enclosures can lead to explosions and releases of the toxic gasses into the surrounding environment.
- a certain quantity of air must flow through the enclosures to properly scavenge and/or dilute the toxic gasses.
- this flow is the result of a draw point or a duct that is connected to a facility exhaust system that has a lower pressure than the atmosphere outside the enclosure.
- This pressure differential causes air to flow from outside the enclosure, through the inlet orifices to the exhaust system through the exit outlet or duct.
- An alternative method would be to have the exit vent in a room of lesser pressure than the room where the inlet vent is located.
- a ventilation system comprising an inlet vent and an outlet (such as an exhaust duct) in communication with the enclosure enables the flow rate within the enclosure.
- Certain exemplary pieces of semiconductor manufacturing equipment utilize billions of cubic feet per year of conditioned air to maintain the required flow rate for safe operation of semiconductor manufacturing equipment.
- Maintaining a high flow rate can be expensive as the air used must generally be conditioned for temperature, humidity, particles, and other factors that are typically required in the manufacture of semiconductors. Such conditioning is costly and can exceed tens of thousands of dollars per machine on an annual basis.
- a high flow rate is only needed a very small percentage of the time that a tool is operating. For example, many semiconductor manufacturing tools require a high flow rate only three percent of the total operating time.
- Certain exemplary times when a high flow rate is needed include times when a technician gains access to the enclosure by removing an access panel or if an explosion, implosion or other similar event has already occurred within the enclosure and a gas release has occurred.
- the flow rate through these enclosures are typically set at “worst-case” conditions (where a high flow rate is required) and is therefore higher than is required for “general and/or least case” situations.
- the present invention comprises, in various exemplary embodiments, a device configured to overcome a typical ventilation system's shortcomings by providing a system and device that adjusts the air flow within an enclosure used for semiconductor manufacturing based upon the occurrence of one or more conditions.
- the ventilation system of the present invention reduces the cost to operate semiconductor manufacturing equipment because of the reduced amount of conditioned air that is consumed.
- an automated air ventilation system for use with semiconductor manufacturing equipment.
- the ventilation system comprises an air inlet orifice restriction system that is configured to enable an air inlet to be in an open state to allow for a high flow rate and a restricted state to prevent a high flow rate.
- the ventilation system changes its orientation from a restricted state to an open state based on the occurrence of one or more conditions.
- Certain exemplary conditions comprise opening a door or removing a panel to gain access to the enclosure, or attempting to do the same by, for example, unlocking a locking mechanism on the panel or door, or the occurrence of an explosion, implosion, gas leak, or other similar event within the enclosure.
- FIG. 1 is a schematic diagram of the present invention depicting an enclosure used for semiconductor manufacturing with a ventilation system and access panels in an exemplary embodiment
- FIG. 2 is a schematic diagram of the present invention depicting a guillotine-type air inlet actuator in a position that enables air to enter an enclosure used for semiconductor manufacturing according to an exemplary embodiment
- FIG. 3 is a schematic diagram of the present invention depicting a guillotine-type air inlet actuator in a restricted position mechanically coupled to an access door that prevents air from entering an enclosure used for semiconductor manufacturing according to an exemplary embodiment
- FIGS. 4A and 4B are schematic diagrams of the present invention depicting an air inlet actuator mechanically coupled to an access door in both an open state ( FIG. 4A ) that enables air to enter an enclosure used for semiconductor manufacturing and a restricted state ( FIG. 4B ) that prevents air from entering the enclosure according to an exemplary embodiment;
- FIG. 5 is a block diagram of the ventilation system according to an exemplary embodiment of the present invention.
- FIG. 6 is a flow chart showing the steps and logic of the air ventilation system according to an exemplary embodiment.
- an air ventilation restriction system for use with semiconductor manufacturing or processing equipment.
- the air ventilation restriction system is configured to be used with an enclosure that houses one or more machines/tools used for semiconductor manufacturing along with numerous volatile or hazardous gasses that may be commonly present during any step of the semiconductor manufacturing process.
- the ventilation system of the present invention is an automated or mechanically-operated system that adjusts vents on an enclosure from a restricted state to an open state based on the detection of a presence of one or more predetermined conditions that require a high flow rate within the enclosure.
- the vents that can be adjusted include inlet, outlet, or any other type of vents that allow air to flow into or out of the enclosure.
- the ventilation system generally comprises an enclosure where semiconductors are manufactured or processed, the enclosure having various inlets, outlets, and a door or other access panel.
- an enclosed space such as an enclosure 12 used for semiconductor manufacturing is equipped with a ventilation system 10 .
- Enclosure 12 comprises a body, inlets 14 , outlets 18 , and an access panel 16 .
- the inlets 14 and outlets 18 are in fluid communication with the enclosed space defined by enclosure 12 .
- inlets 14 can be any opening or orifice such as slits, holes, apertures, mesh screens, ducts, or any device configured to allow air or other gasses to enter the enclosure 12 .
- Outlets 18 provide an exit for gases located within the enclosure 12 .
- ductwork (not shown) can extend from the outlets 18 and is operatively connected to a vacuum or other mechanism that causes gases within the enclosure to be withdrawn therefrom through the outlets 18 .
- the outlets 18 are slits, holes, apertures, mesh screens, ducts, or any other device through which gases within the enclosure are withdrawn.
- the enclosure 12 is configured to provide a pressure differential between the interior of the enclosure 12 and the location immediately adjacent to the external surface of the outlets 18 such that the gases flow into the enclosure 12 through the inlets 14 and exit the enclosure 12 through the outlets 18 . Accordingly, the flow rate of gases into the enclosure 12 via the inlets 14 and out of the enclosure 12 via the outlets 18 can be selectively adjustable at the inlets 14 , the outlets 18 , or a combination thereof.
- access panel 16 can be a door mounted by hinges to enclosure 12 , a slideable door, a removable panel, or anything else that grants a user access to enclosure 12 .
- Inlets 14 and outlets 18 can located anywhere on enclosure 12 such as a fixed panel that may form a sidewall of the enclosure 12 or on an access panel 16 .
- the present invention also contemplates that the air drawn through the enclosure 12 is appropriately conditioned for semiconductor manufacturing.
- enclosure 12 further comprises exhaust pipes (not shown) and a filter 19 such as a HEPA filter which is configured to remove dirt, debris, and other contaminants from air that enters enclosure 12 .
- a filter 19 such as a HEPA filter which is configured to remove dirt, debris, and other contaminants from air that enters enclosure 12 .
- air that enters enclosure 12 is conditioned for temperature, humidity, particles, and any other factor to make the air suitable for semiconductor manufacturing.
- ventilation system 10 can be used with any equipment or space that requires the use of conditioned air. Further, in yet other embodiments, ventilation system 10 can be applied to other applications where air may not be pre-conditioned but must be treated after it has exited a confined space such as enclosure 12 .
- ventilation system 10 is an automated or mechanically-operated ventilation system for enclosure 12 that selectively adjusts the inlets 14 through which air and gases enter the enclosure 12 or the outlets 18 through which air and gases exit the enclosure 12 from a restricted flow rate to an open state, thereby allowing air to flow through the enclosure 12 at an unrestricted or higher flow rate.
- Ventilation system 10 is typically in a restricted state to avoid excessive consumption of conditioned air to reduce costs associated with conditioned air.
- ventilation system 10 is configured to selectively adjust the inlet 14 through which air enters the enclosure 12 .
- ventilation system 10 is configured to selectively adjust outlets 18 through which air exits the enclosure 12 .
- the ventilation system 10 is configured to selectively adjust both the inlets 14 and outlets 18 of the enclosure 12 between a restricted state and an open state. It should be understood by one skilled in the art that when the inlets 14 and/or outlets 18 are in the open state, the inlets 14 and/or outlets 18 allow more air to flow therethrough relative to when the inlets 14 and/or outlets 18 are in the restricted state. It should also be understood by one skilled in the art that the term “open state,” as used herein, means that the inlets 14 and/or the outlets 18 are fully open such that the flow rate of gases flowing therethrough have little or no restriction.
- restrictive state means that the inlets 14 and/or outlets 18 are either partially or fully closed such that the flow rate of the gases flowing therethrough is less than the flow rate flowing therethrough when the inlets 14 and/or outlets are in the open state.
- the inlets 14 and the outlets 18 can be independently adjustable between the restricted state and the open state.
- the inlets 14 and ducts can be simultaneously and correspondingly adjustable between the restricted state and the open state.
- ventilation system 10 comprises actuator 20 which is in communication with inlet 14 .
- the exemplary embodiment of the ventilation system 10 is shown and described with reference to controlling the flow rate of gases through an inlet 14 .
- the ventilation system 10 can likewise be configured to control the flow rate of gases through the outlets 18 .
- Actuator 20 is any mechanism that is capable of covering the inlet 14 or otherwise adjusting inlets 14 to enable inlets 14 to be adjustable between the restricted state and the open state.
- actuator 20 is a guillotine style device and comprises a moveable panel 22 which is operatively connected to a driving mechanism 24 .
- Driving mechanism 24 can be any mechanism configured to move moveable panel 22 .
- Certain exemplary driving mechanisms include pneumatic devices, piston driven systems, air cylinders, electric motors, or any other such similar mechanism.
- moveable panel 22 is depicted as a guillotine style blade in this exemplary embodiment, moveable panel 22 can be any device used to cover and/or obstruct gas flow through the inlets 14 .
- an access door panel sensor is utilized and senses when movable panel 22 is about to be opened and operates ventilation system 10 to reduce pressure within enclosure 12 to enable access panel 22 to be opened easily.
- ventilation system 10 further comprises one or more sensors 11 that are operatively connected to actuator 20 that control the operation of actuator 20 .
- the inlets 14 are selectively adjusted from the restricted state to the open state to provide a high flow rate of gases through the enclosure to scavenge volatile undesirable gasses and/or other types of dangerous gasses that may be present within enclosure 12 or to generally dilute the gases within the enclosure 12 .
- one sensed condition is when an operator of the equipment is attempting to gain or gaining access to enclosure 12 by attempting to open or remove access panel 16 .
- Another exemplary sensed condition is when there is an integrity change within enclosure 12 that may result from an unusually high volume of volatile gasses, an explosion or an implosion within enclosure 12 .
- sensor 11 can detect whether or not the user desired that the inlets 14 be changed from a restricted state to an open state based on user input. As such, a user can selectively adjust the state of inlets 14 if they desire if none of the sensed conditions are present to automatically change the state of inlets 14 .
- Certain sensed conditions comprise, but are not necessarily limited to, a changes in temperature within the enclosure 12 , a change in pressure within the enclosure 12 , a change of gaseous composition within the enclosure 12 , a change in humidity level within the enclosure 12 , a change in particulate level within the enclosure 12 , a fire within the enclosure 12 , an explosion within the enclosure 12 , an implosion within the enclosure 12 , a change in amount of a particular gas within the enclosure, and a change in percentage of a particular gas within the enclosure 12 .
- Sensors 11 may also detect the presence or absence of two or more conditions.
- the first condition is whether or not a user is obtaining access to enclosure 12 based on movement or attempted movement of access panel 16 or a latch/lock used for opening access panel 16 .
- the second condition is whether the integrity within enclosure 12 has been compromised by a release of toxic fumes, an explosion, an implosion, or any atmospheric change that would create an explosion or other risk within enclosure 12 .
- the sensor 11 Upon sensing the presence of at least one sensed condition, the sensor 11 sends a signal to actuator 20 which directs the driving mechanism 24 to move the moveable panel 22 away from inlets 14 to adjust the inlet 14 to the open state to obtain a high flow rate of gases therethrough.
- a second signal is sent to actuator 20 which in turn directs that driving mechanism 24 move moveable panel 22 to return the inlet 14 to a restricted state.
- the lack of a signal from sensor 11 indicates that driving mechanism 24 should maintain the moveable panel 22 over the inlet 14 in a restricted state.
- sensor 11 can sense whether or not access panel 16 has been moved or the operator intends to move access panel 16 to gain entry to enclosure 12 .
- sensor 11 can be a capacitance sensor located within a handle 26 used to move access panel 16 , though sensor 11 may alternatively comprise other type of sensors that detect a user contacting handle 26 such as a thermal sensor to detect body heat that would occur when a user's hand touches handle 26 .
- Other exemplary sensors comprise an emergency power sensor and a thermal runaway sensor.
- sensor 11 can be disposed within a frame of enclosure 12 that supports access panel 16 .
- This type of sensor may comprise a two piece sensor wherein one piece is in the frame and another is located on the edge of access panel 16 .
- a signal is sent between the two sensors.
- the signal is no longer sent between the two parts of sensor 11 indicating the occurrence of a sensed condition, namely an open access panel 16 .
- At least one sensor 11 is in communication with an operating mechanism that automatically operates access panel 16 .
- this operating mechanism begins move or remove access panel 16
- sensor 11 sends a signal to actuator 20 to selectively adjust the inlet 14 from a restricted state to an open state (or vice versa) depending on whether access panel is being removed from enclosure 12 or replaced.
- the senor 11 can be eliminated such that the actuator 20 is mechanically coupled or otherwise linked to access panel 16 .
- a mechanical coupling 28 such as a clevis mount (not shown) or any other similar device, attaches driving mechanism 24 to access panel 16 . Therefore, the movement of access panel 16 causes the driving mechanism 24 to move moveable panel 22 when the handle 26 is operated. Accordingly, as the handle 26 is lifted or moved to remove the access panel 16 , the driving mechanism 24 moves the moveable panel 22 , thereby selectively adjusting the inlet 14 from a restricted state to an open state to increase the flow rate of gases through the inlet 14 .
- access panel 16 is configured to move within the body of enclosure 12 upwards in the direction of arrows A. In other exemplary embodiments, access panel 16 can be moved downwards in the opposite direction than that depicted. In yet other embodiments, access panel can be moved side to side. This movement of access panel 16 moves both the coupling mechanism 28 and the driving mechanism 24 , which in turn pulls moveable panel 22 upwardly to allow inlet 14 to be in the open state and enclosure 12 to have a high flow rate therethrough. When the door is moved back to the closed position, it in turn moves coupling mechanism 28 and driving mechanism 24 and moveable panel 22 back over inlet 14 placing inlet 14 in a restricted state.
- the grate 21 of the inlet 14 is itself selectively adjustable between an open state ( FIG. 4A ) and a restricted state ( FIG. 4B ).
- the handle 26 of the access panel 16 is mechanically coupled to the grate 21 of the inlet 14 by a rod 30 and configured to move the grate 21 upwardly in the direction of arrow A.
- the rod 30 operatively connects the access panel 16 and the grate 21 of the inlet 14 . Movement of the handle 26 in the upwardly or downwardly direction relative to arrow A causes the access panel 16 to move in a corresponding manner.
- the rod 30 translates or moves in a corresponding manner, thereby selectively adjusting the grate 21 of the inlet 14 between the open and restricted states.
- access panel 16 can be moved side to side or any other direction in which movement of the handle 26 and access panel 16 causes the inlet 14 to be adjusted between the open and restricted states.
- rod 30 is also moved upward thereby placing inlets 14 in an open state as depicted in FIG. 4B .
- rod 30 can be coupled to a motor instead of completely depending upon the movement of handle 26 or access panel 16 .
- at least one sensor 11 can be used as described above to send a signal to a motor coupled to rod 30 and operate the grate 21 of the inlet 14 as described above based on the presence or absence of certain conditions.
- ventilation system 10 may be activated depending on whether or not the integrity within enclosure 12 has been compromised.
- the term “integrity” denotes any change of atmosphere, gaseous composition, humidity level, particulate level, fire, temperature, explosion, implosion, pressure change, a certain amount of a particular gas, a percentage of a particular gas or any other atmospheric change they may occur within enclosure 12 .
- a sensor 11 can sense the change of integrity within enclosure 12 and then send a signal to the actuator 20 ( FIG. 2 ). Actuator 20 then directs the driving mechanism 24 to move moveable panel 22 upwardly (e.g. as depicted in FIG. 2 .) thereby placing the inlet 14 in an open state allowing for a high flow rate.
- Certain exemplary sensors 11 to sense for and detect integrity changes comprise, but are certainly not limited to, a chamber presence sensor, a gas leak detector sensor, an emergency power off (EPO), thermal run away sensor.
- a block diagram depicts the connection between various sensors 11 of the ventilation system 10 and the actuator 20 .
- a door sensor 36 a pressure sensor 38 , and a temperature gauge 40 are each operatively connected to a signal generator 34 .
- the corresponding sensor 36 , 38 , 40 sends a signal to the signal generator 34 .
- the signal generator 34 receives the signal from the sensors 36 , 38 , 40 that indicates a change in a sensed condition and sends a corresponding signal to the actuator 20 .
- the actuator 20 then selectively adjusts the inlet 14 to the open or restricted state, depending upon the signal provided by the signal generator 34 .
- pressure sensor 38 and temperature gauge 40 sense the pressure and temperature within enclosure 12 .
- the door sensor 36 senses whether or not access panel 16 has been moved or the operator intends to move the access panel 16 by gripping the handle 26 when the door sensor 36 is a capacitance sensor as described above.
- the signal generator 34 monitors the various inputs from sensors 36 , 38 , 40 and directs the ventilation system 10 to respond as outlined above.
- the corresponding sensor would send a signal to the signal generator 34 that would determine the present state of the inlet 14 and determine if a signal should be sent to the actuator 20 to adjust the state of the inlet 14 .
- the pressure sensor 38 senses a change in pressure within the enclosure 12
- the pressure sensor 38 would send a signal to the signal generator 34 .
- the signal generator 34 would send a signal to the actuator 20 to adjust the inlet 14 from the restricted state to the open state in which the flow rate of gas through the inlet 14 and the enclosure 12 is increased.
- the door sensor 36 If the door sensor 36 then senses a change in condition, such as an operator opening the access panel 16 , the door sensor 36 would send a signal to the signal generator 34 . However, the signal generator 34 verifies that the inlet 14 is already in the open state due to the previous pressure change and subsequent adjustment of the state of the inlet 14 . In an embodiment, the signal generator 34 sends a signal to the actuator 20 to maintain the inlet 14 in the open state. In another embodiment, the signal generator would not send a signal to the actuator 20 , thereby maintaining the inlet 14 in the open state.
- the signal generator 34 sends a signal to the actuator 20 to adjust the inlet 14 from the open state to the restricted state when the sensed condition of both sensors 36 , 38 is no longer sensed by the corresponding sensor and the signal generator 34 receives a signal from both sensors 36 , 38 indicating that the sensed condition is no longer present.
- a flow chart depicting certain exemplary steps of operation for ventilation system 10 is depicted.
- inlets 14 are in a restricted state and no action from ventilation system 10 is required.
- the sensors determine whether an operator is attempting to access enclosure 12 . If the answer is yes, ventilation system 10 adjusts inlets 14 to be in an open state. If the answer is no, ventilation system 10 directs that inlets 14 remain in the restricted state.
- the sensors 11 detect whether or not the integrity within enclosure 12 has changed in any way or been compromised. If yes, ventilation system 10 adjusts inlets 14 to the open state as described above. If no, ventilation system 10 ensures that inlets 14 remain in the restricted state.
Abstract
The present invention is directed at an air ventilation system for use with semiconductor manufacturing equipment. Specifically, the ventilation system of the present invention adjusts vents or outlets located on an enclosure used for semiconductor manufacturing between a restricted state and an open state. When the vents and/or outlets are in an open state, a high flow rate through the enclosure is able to properly scavenge toxic and volatile gasses to safely remove them. When the vents and/or outlets are in a restricted state, the flow rate of gases therethrough is substantially or fully restricted. Upon the sensing of a condition (or the lack thereof) or the manual operation of an operator, the vents and/or outlets are selectively adjusted between the restricted and open states.
Description
- The invention relates to an automated air ventilation system for use with enclosures such as those used in semiconductor manufacturing and processing. More particularly, the device of the present invention comprises an automated ventilation system that enables an enclosure to only have the maximum flow rate when desired, for example, based on the presence or absence of one or more conditions that require a high flow rate.
- Semiconductor manufacturing requires numerous gasses that are highly explosive, toxic, corrosive, or otherwise harmful. These gasses are typically found in numerous machines and processing tools that include enclosures that are used (in part) to prevent the gasses from escaping into the immediate working environment and causing harm. Allowing these gasses to build up within the enclosures can lead to explosions and releases of the toxic gasses into the surrounding environment.
- To prevent gas buildup within the enclosures, a certain quantity of air must flow through the enclosures to properly scavenge and/or dilute the toxic gasses. Generally, this flow is the result of a draw point or a duct that is connected to a facility exhaust system that has a lower pressure than the atmosphere outside the enclosure. This pressure differential causes air to flow from outside the enclosure, through the inlet orifices to the exhaust system through the exit outlet or duct. An alternative method would be to have the exit vent in a room of lesser pressure than the room where the inlet vent is located. A ventilation system comprising an inlet vent and an outlet (such as an exhaust duct) in communication with the enclosure enables the flow rate within the enclosure. Certain exemplary pieces of semiconductor manufacturing equipment utilize billions of cubic feet per year of conditioned air to maintain the required flow rate for safe operation of semiconductor manufacturing equipment.
- Maintaining a high flow rate can be expensive as the air used must generally be conditioned for temperature, humidity, particles, and other factors that are typically required in the manufacture of semiconductors. Such conditioning is costly and can exceed tens of thousands of dollars per machine on an annual basis.
- That being said, it is not necessary to maintain a high flow rate at all times during a particular machine's operation. Typically, a high flow rate is only needed a very small percentage of the time that a tool is operating. For example, many semiconductor manufacturing tools require a high flow rate only three percent of the total operating time. Certain exemplary times when a high flow rate is needed include times when a technician gains access to the enclosure by removing an access panel or if an explosion, implosion or other similar event has already occurred within the enclosure and a gas release has occurred. For reasons of safety, the flow rate through these enclosures are typically set at “worst-case” conditions (where a high flow rate is required) and is therefore higher than is required for “general and/or least case” situations.
- Because current semiconductor manufacturing tools utilize a high flow rate the entire time they operate regardless of whether such a high flow rate is actually needed, these tools consume a tremendous amount of energy and money. Therefore, an automated ventilation system for use with semiconductor manufacturing tools that selectively provides a high flow rate based upon the need for such a high flow rate is desired.
- As set forth in the detailed description and accompanying figures, the present invention comprises, in various exemplary embodiments, a device configured to overcome a typical ventilation system's shortcomings by providing a system and device that adjusts the air flow within an enclosure used for semiconductor manufacturing based upon the occurrence of one or more conditions. As a result, the ventilation system of the present invention reduces the cost to operate semiconductor manufacturing equipment because of the reduced amount of conditioned air that is consumed.
- In accordance with an exemplary embodiment of the present invention, an automated air ventilation system for use with semiconductor manufacturing equipment is provided. In accordance with one exemplary embodiment of the present invention, the ventilation system comprises an air inlet orifice restriction system that is configured to enable an air inlet to be in an open state to allow for a high flow rate and a restricted state to prevent a high flow rate. The ventilation system changes its orientation from a restricted state to an open state based on the occurrence of one or more conditions. Certain exemplary conditions comprise opening a door or removing a panel to gain access to the enclosure, or attempting to do the same by, for example, unlocking a locking mechanism on the panel or door, or the occurrence of an explosion, implosion, gas leak, or other similar event within the enclosure.
- The subject invention will hereinafter be described in conjunction with the appended drawing figures, wherein like numerals denote like elements, and wherein;
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FIG. 1 is a schematic diagram of the present invention depicting an enclosure used for semiconductor manufacturing with a ventilation system and access panels in an exemplary embodiment; -
FIG. 2 is a schematic diagram of the present invention depicting a guillotine-type air inlet actuator in a position that enables air to enter an enclosure used for semiconductor manufacturing according to an exemplary embodiment; -
FIG. 3 is a schematic diagram of the present invention depicting a guillotine-type air inlet actuator in a restricted position mechanically coupled to an access door that prevents air from entering an enclosure used for semiconductor manufacturing according to an exemplary embodiment; -
FIGS. 4A and 4B are schematic diagrams of the present invention depicting an air inlet actuator mechanically coupled to an access door in both an open state (FIG. 4A ) that enables air to enter an enclosure used for semiconductor manufacturing and a restricted state (FIG. 4B ) that prevents air from entering the enclosure according to an exemplary embodiment; -
FIG. 5 is a block diagram of the ventilation system according to an exemplary embodiment of the present invention; and -
FIG. 6 is a flow chart showing the steps and logic of the air ventilation system according to an exemplary embodiment. - The detailed description of various exemplary embodiments of the invention herein makes reference to the accompanying figures. While these exemplary embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, it should be understood that other embodiments may be realized and that logical and mechanical changes may be made without departing from the spirit and scope of the invention. Thus, the detailed description herein is presented for purposes of illustration only and not of limitation. Additionally, while the disclosure herein describes the present invention used in connection with semiconductor manufacturing and processing, it should be noted that the air ventilation restriction system can be used with any ventilation system or area receiving circulating air.
- In accordance with various exemplary embodiments of the present invention, an air ventilation restriction system for use with semiconductor manufacturing or processing equipment is disclosed. The air ventilation restriction system is configured to be used with an enclosure that houses one or more machines/tools used for semiconductor manufacturing along with numerous volatile or hazardous gasses that may be commonly present during any step of the semiconductor manufacturing process.
- The ventilation system of the present invention is an automated or mechanically-operated system that adjusts vents on an enclosure from a restricted state to an open state based on the detection of a presence of one or more predetermined conditions that require a high flow rate within the enclosure. For example, the vents that can be adjusted include inlet, outlet, or any other type of vents that allow air to flow into or out of the enclosure.
- In accordance with various embodiments, the ventilation system generally comprises an enclosure where semiconductors are manufactured or processed, the enclosure having various inlets, outlets, and a door or other access panel.
- For example, more specifically, in accordance with an exemplary embodiment of the present invention and with reference to
FIGS. 1-5 , an enclosed space such as anenclosure 12 used for semiconductor manufacturing is equipped with aventilation system 10.Enclosure 12 comprises a body,inlets 14,outlets 18, and anaccess panel 16. Theinlets 14 andoutlets 18 are in fluid communication with the enclosed space defined byenclosure 12. In an exemplary embodiment,inlets 14 can be any opening or orifice such as slits, holes, apertures, mesh screens, ducts, or any device configured to allow air or other gasses to enter theenclosure 12.Outlets 18 provide an exit for gases located within theenclosure 12. In an embodiment, ductwork (not shown) can extend from theoutlets 18 and is operatively connected to a vacuum or other mechanism that causes gases within the enclosure to be withdrawn therefrom through theoutlets 18. In another embodiment, theoutlets 18 are slits, holes, apertures, mesh screens, ducts, or any other device through which gases within the enclosure are withdrawn. Theenclosure 12 is configured to provide a pressure differential between the interior of theenclosure 12 and the location immediately adjacent to the external surface of theoutlets 18 such that the gases flow into theenclosure 12 through theinlets 14 and exit theenclosure 12 through theoutlets 18. Accordingly, the flow rate of gases into theenclosure 12 via theinlets 14 and out of theenclosure 12 via theoutlets 18 can be selectively adjustable at theinlets 14, theoutlets 18, or a combination thereof. - Further,
access panel 16 can be a door mounted by hinges toenclosure 12, a slideable door, a removable panel, or anything else that grants a user access toenclosure 12.Inlets 14 andoutlets 18 can located anywhere onenclosure 12 such as a fixed panel that may form a sidewall of theenclosure 12 or on anaccess panel 16. The present invention also contemplates that the air drawn through theenclosure 12 is appropriately conditioned for semiconductor manufacturing. - In this exemplary embodiment,
enclosure 12 further comprises exhaust pipes (not shown) and afilter 19 such as a HEPA filter which is configured to remove dirt, debris, and other contaminants from air that entersenclosure 12. Further, in one exemplary embodiment, air that entersenclosure 12 is conditioned for temperature, humidity, particles, and any other factor to make the air suitable for semiconductor manufacturing. - Further, while the present disclosure is directed at a specific embodiment where
ventilation system 10 is used with semiconductor manufacturing equipment,ventilation system 10 can be used with any equipment or space that requires the use of conditioned air. Further, in yet other embodiments,ventilation system 10 can be applied to other applications where air may not be pre-conditioned but must be treated after it has exited a confined space such asenclosure 12. - As mentioned above,
ventilation system 10 is an automated or mechanically-operated ventilation system forenclosure 12 that selectively adjusts theinlets 14 through which air and gases enter theenclosure 12 or theoutlets 18 through which air and gases exit theenclosure 12 from a restricted flow rate to an open state, thereby allowing air to flow through theenclosure 12 at an unrestricted or higher flow rate.Ventilation system 10 is typically in a restricted state to avoid excessive consumption of conditioned air to reduce costs associated with conditioned air. In one exemplary embodiment,ventilation system 10 is configured to selectively adjust theinlet 14 through which air enters theenclosure 12. In other exemplary embodiments,ventilation system 10 is configured to selectively adjustoutlets 18 through which air exits theenclosure 12. In yet another embodiment, theventilation system 10 is configured to selectively adjust both theinlets 14 andoutlets 18 of theenclosure 12 between a restricted state and an open state. It should be understood by one skilled in the art that when theinlets 14 and/oroutlets 18 are in the open state, theinlets 14 and/oroutlets 18 allow more air to flow therethrough relative to when theinlets 14 and/oroutlets 18 are in the restricted state. It should also be understood by one skilled in the art that the term “open state,” as used herein, means that theinlets 14 and/or theoutlets 18 are fully open such that the flow rate of gases flowing therethrough have little or no restriction. It should also be understood by one skilled in the art that the term “restricted state,” as used herein, means that theinlets 14 and/oroutlets 18 are either partially or fully closed such that the flow rate of the gases flowing therethrough is less than the flow rate flowing therethrough when theinlets 14 and/or outlets are in the open state. In an embodiment, theinlets 14 and theoutlets 18 can be independently adjustable between the restricted state and the open state. In another embodiment, theinlets 14 and ducts can be simultaneously and correspondingly adjustable between the restricted state and the open state. - In accordance with an exemplary embodiment of the present invention and with reference to
FIGS. 2-3 ,ventilation system 10 comprisesactuator 20 which is in communication withinlet 14. The exemplary embodiment of theventilation system 10 is shown and described with reference to controlling the flow rate of gases through aninlet 14. However, it should be understood that theventilation system 10 can likewise be configured to control the flow rate of gases through theoutlets 18.Actuator 20 is any mechanism that is capable of covering theinlet 14 or otherwise adjustinginlets 14 to enableinlets 14 to be adjustable between the restricted state and the open state. - In one exemplary embodiment,
actuator 20 is a guillotine style device and comprises amoveable panel 22 which is operatively connected to adriving mechanism 24. Drivingmechanism 24 can be any mechanism configured to movemoveable panel 22. Certain exemplary driving mechanisms include pneumatic devices, piston driven systems, air cylinders, electric motors, or any other such similar mechanism. Whilemoveable panel 22 is depicted as a guillotine style blade in this exemplary embodiment,moveable panel 22 can be any device used to cover and/or obstruct gas flow through theinlets 14. In certain exemplary embodiments, an access door panel sensor is utilized and senses whenmovable panel 22 is about to be opened and operatesventilation system 10 to reduce pressure withinenclosure 12 to enableaccess panel 22 to be opened easily. - In the normal operating conditions of the semiconductor tool having the
enclosure 12, theinlets 14 are in a restricted state, thereby reducing the amount of conditioned air flowing through theenclosure 12. In certain exemplary embodiments,ventilation system 10 further comprises one ormore sensors 11 that are operatively connected to actuator 20 that control the operation ofactuator 20. When at least onesensor 11 detects the presence or absence of one or more sensed conditions, theinlets 14 are selectively adjusted from the restricted state to the open state to provide a high flow rate of gases through the enclosure to scavenge volatile undesirable gasses and/or other types of dangerous gasses that may be present withinenclosure 12 or to generally dilute the gases within theenclosure 12. - For example, one sensed condition is when an operator of the equipment is attempting to gain or gaining access to
enclosure 12 by attempting to open or removeaccess panel 16. Another exemplary sensed condition is when there is an integrity change withinenclosure 12 that may result from an unusually high volume of volatile gasses, an explosion or an implosion withinenclosure 12. In yet other exemplary embodiments,sensor 11 can detect whether or not the user desired that theinlets 14 be changed from a restricted state to an open state based on user input. As such, a user can selectively adjust the state ofinlets 14 if they desire if none of the sensed conditions are present to automatically change the state ofinlets 14. Certain sensed conditions comprise, but are not necessarily limited to, a changes in temperature within theenclosure 12, a change in pressure within theenclosure 12, a change of gaseous composition within theenclosure 12, a change in humidity level within theenclosure 12, a change in particulate level within theenclosure 12, a fire within theenclosure 12, an explosion within theenclosure 12, an implosion within theenclosure 12, a change in amount of a particular gas within the enclosure, and a change in percentage of a particular gas within theenclosure 12. -
Sensors 11 may also detect the presence or absence of two or more conditions. For example, in such an embodiment, the first condition is whether or not a user is obtaining access toenclosure 12 based on movement or attempted movement ofaccess panel 16 or a latch/lock used for openingaccess panel 16. The second condition is whether the integrity withinenclosure 12 has been compromised by a release of toxic fumes, an explosion, an implosion, or any atmospheric change that would create an explosion or other risk withinenclosure 12. - Upon sensing the presence of at least one sensed condition, the
sensor 11 sends a signal to actuator 20 which directs thedriving mechanism 24 to move themoveable panel 22 away frominlets 14 to adjust theinlet 14 to the open state to obtain a high flow rate of gases therethrough. When the sensed condition is no longer present as detected bysensor 11, a second signal is sent to actuator 20 which in turn directs that drivingmechanism 24 movemoveable panel 22 to return theinlet 14 to a restricted state. Alternatively, the lack of a signal fromsensor 11 indicates that drivingmechanism 24 should maintain themoveable panel 22 over theinlet 14 in a restricted state. - In accordance with an embodiment of the present invention and with reference to
FIGS. 1 and 2 ,sensor 11 can sense whether or not accesspanel 16 has been moved or the operator intends to moveaccess panel 16 to gain entry toenclosure 12. For example,sensor 11 can be a capacitance sensor located within ahandle 26 used to moveaccess panel 16, thoughsensor 11 may alternatively comprise other type of sensors that detect auser contacting handle 26 such as a thermal sensor to detect body heat that would occur when a user's hand touches handle 26. Other exemplary sensors comprise an emergency power sensor and a thermal runaway sensor. Further,sensor 11 can be disposed within a frame ofenclosure 12 that supportsaccess panel 16. This type of sensor may comprise a two piece sensor wherein one piece is in the frame and another is located on the edge ofaccess panel 16. Whenaccess panel 16 is installed withinenclosure 12, a signal is sent between the two sensors. However, whenaccess panel 16 is removed fromenclosure 12, the signal is no longer sent between the two parts ofsensor 11 indicating the occurrence of a sensed condition, namely anopen access panel 16. - In yet another exemplary embodiment, at least one
sensor 11 is in communication with an operating mechanism that automatically operatesaccess panel 16. When this operating mechanism begins move or removeaccess panel 16,sensor 11 sends a signal toactuator 20 to selectively adjust theinlet 14 from a restricted state to an open state (or vice versa) depending on whether access panel is being removed fromenclosure 12 or replaced. - In another embodiment, the
sensor 11 can be eliminated such that theactuator 20 is mechanically coupled or otherwise linked to accesspanel 16. In this exemplary embodiment depicted inFIG. 3 , amechanical coupling 28, such as a clevis mount (not shown) or any other similar device, attaches drivingmechanism 24 to accesspanel 16. Therefore, the movement ofaccess panel 16 causes thedriving mechanism 24 to movemoveable panel 22 when thehandle 26 is operated. Accordingly, as thehandle 26 is lifted or moved to remove theaccess panel 16, thedriving mechanism 24 moves themoveable panel 22, thereby selectively adjusting theinlet 14 from a restricted state to an open state to increase the flow rate of gases through theinlet 14. - In this embodiment,
access panel 16 is configured to move within the body ofenclosure 12 upwards in the direction of arrows A. In other exemplary embodiments,access panel 16 can be moved downwards in the opposite direction than that depicted. In yet other embodiments, access panel can be moved side to side. This movement ofaccess panel 16 moves both thecoupling mechanism 28 and thedriving mechanism 24, which in turn pullsmoveable panel 22 upwardly to allowinlet 14 to be in the open state andenclosure 12 to have a high flow rate therethrough. When the door is moved back to the closed position, it in turn movescoupling mechanism 28 and drivingmechanism 24 andmoveable panel 22 back overinlet 14 placinginlet 14 in a restricted state. - In accordance with another exemplary embodiment of the present invention and with reference to
FIGS. 4A and 4B , thegrate 21 of theinlet 14 is itself selectively adjustable between an open state (FIG. 4A ) and a restricted state (FIG. 4B ). In this exemplary embodiment, thehandle 26 of theaccess panel 16 is mechanically coupled to thegrate 21 of theinlet 14 by arod 30 and configured to move thegrate 21 upwardly in the direction of arrow A. Therod 30 operatively connects theaccess panel 16 and thegrate 21 of theinlet 14. Movement of thehandle 26 in the upwardly or downwardly direction relative to arrow A causes theaccess panel 16 to move in a corresponding manner. As thehandle 26 is lifted to open theaccess panel 16 or thehandle 26 is lowered to lock theaccess panel 16, therod 30 translates or moves in a corresponding manner, thereby selectively adjusting thegrate 21 of theinlet 14 between the open and restricted states. In other exemplary embodiments,access panel 16 can be moved side to side or any other direction in which movement of thehandle 26 andaccess panel 16 causes theinlet 14 to be adjusted between the open and restricted states. Whenaccess panel 16 is moved upward in the direction of arrows A,rod 30 is also moved upward thereby placinginlets 14 in an open state as depicted inFIG. 4B . - In other exemplary embodiments,
rod 30 can be coupled to a motor instead of completely depending upon the movement ofhandle 26 oraccess panel 16. In yet other exemplary embodiments, at least onesensor 11 can be used as described above to send a signal to a motor coupled torod 30 and operate thegrate 21 of theinlet 14 as described above based on the presence or absence of certain conditions. - Besides the attempted or actual movement of the
handle 26 or theaccess panel 16 in various embodiments,ventilation system 10 may be activated depending on whether or not the integrity withinenclosure 12 has been compromised. As used herein, the term “integrity” denotes any change of atmosphere, gaseous composition, humidity level, particulate level, fire, temperature, explosion, implosion, pressure change, a certain amount of a particular gas, a percentage of a particular gas or any other atmospheric change they may occur withinenclosure 12. - In this exemplary embodiment, a
sensor 11 can sense the change of integrity withinenclosure 12 and then send a signal to the actuator 20 (FIG. 2 ).Actuator 20 then directs thedriving mechanism 24 to movemoveable panel 22 upwardly (e.g. as depicted inFIG. 2 .) thereby placing theinlet 14 in an open state allowing for a high flow rate. Certainexemplary sensors 11 to sense for and detect integrity changes comprise, but are certainly not limited to, a chamber presence sensor, a gas leak detector sensor, an emergency power off (EPO), thermal run away sensor. - In accordance with another exemplary embodiment and with reference to
FIG. 5 , a block diagram depicts the connection betweenvarious sensors 11 of theventilation system 10 and theactuator 20. In this exemplary embodiment, adoor sensor 36, apressure sensor 38, and atemperature gauge 40 are each operatively connected to asignal generator 34. When any of thesensors sensor signal generator 34. Thesignal generator 34 receives the signal from thesensors actuator 20. Theactuator 20 then selectively adjusts theinlet 14 to the open or restricted state, depending upon the signal provided by thesignal generator 34. - As can be appreciated by one of ordinary skill in the art,
pressure sensor 38 andtemperature gauge 40 sense the pressure and temperature withinenclosure 12. Further, thedoor sensor 36 senses whether or not accesspanel 16 has been moved or the operator intends to move theaccess panel 16 by gripping thehandle 26 when thedoor sensor 36 is a capacitance sensor as described above. Thesignal generator 34 monitors the various inputs fromsensors ventilation system 10 to respond as outlined above. For example, ifdoor sensor 36 indicated that a user's hand was onhandle 26, or alternatively, ifpressure sensor 38 indicated that pressure had increased dramatically withinenclosure 12, the corresponding sensor would send a signal to thesignal generator 34 that would determine the present state of theinlet 14 and determine if a signal should be sent to theactuator 20 to adjust the state of theinlet 14. For example, if thepressure sensor 38 senses a change in pressure within theenclosure 12, thepressure sensor 38 would send a signal to thesignal generator 34. If theinlet 14 is currently in the restricted state, thesignal generator 34 would send a signal to theactuator 20 to adjust theinlet 14 from the restricted state to the open state in which the flow rate of gas through theinlet 14 and theenclosure 12 is increased. If thedoor sensor 36 then senses a change in condition, such as an operator opening theaccess panel 16, thedoor sensor 36 would send a signal to thesignal generator 34. However, thesignal generator 34 verifies that theinlet 14 is already in the open state due to the previous pressure change and subsequent adjustment of the state of theinlet 14. In an embodiment, thesignal generator 34 sends a signal to theactuator 20 to maintain theinlet 14 in the open state. In another embodiment, the signal generator would not send a signal to theactuator 20, thereby maintaining theinlet 14 in the open state. Thesignal generator 34 sends a signal to theactuator 20 to adjust theinlet 14 from the open state to the restricted state when the sensed condition of bothsensors signal generator 34 receives a signal from bothsensors - In accordance with another exemplary embodiment of the present invention and with reference
FIG. 6 , a flow chart depicting certain exemplary steps of operation forventilation system 10 is depicted. At astep 42,inlets 14 are in a restricted state and no action fromventilation system 10 is required. At adecision point 44, the sensors determine whether an operator is attempting to accessenclosure 12. If the answer is yes,ventilation system 10 adjustsinlets 14 to be in an open state. If the answer is no,ventilation system 10 directs thatinlets 14 remain in the restricted state. - Alternatively, at
decision point 46 thesensors 11 detect whether or not the integrity withinenclosure 12 has changed in any way or been compromised. If yes,ventilation system 10 adjustsinlets 14 to the open state as described above. If no,ventilation system 10 ensures thatinlets 14 remain in the restricted state. - Finally, various principles of the invention have been described in illustrative embodiments. However, many combinations and modifications of the above-described structures, arrangements, proportions, elements materials and components, used in the practice of the invention, in addition to those not specifically described, can be varied without departing from those principles.
Claims (25)
1. A semiconductor processing tool comprising:
an enclosed space through which air flows;
an outlet in fluid communication with said enclosed space; and
an inlet in fluid communication with said enclosed space wherein at least one of said inlet or said outlet is operable between a restricted state and an open state based on the presence or absence of a condition.
2. The semiconductor processing enclosure according to claim 1 , further comprising an access panel configured to grant access to said enclosed space, wherein the presence of the condition occurs when said access panel is in an open position.
3. The semiconductor processing enclosure according to claim 2 , wherein said access panel is a door.
4. The semiconductor processing enclosure according to claim 3 , wherein said door further comprises a handle and a sensor that is operatively connected to said handle.
5. The semiconductor processing enclosure according to claim 4 , wherein said presence of the condition occurs when an operator contacts said handle.
6. The semiconductor processing enclosure according to claim 4 , wherein said door further comprises a rod connected to said inlet and movement of said door causes a grate in said inlet to change orientation from a restricted state to an open state.
7. The semiconductor processing enclosure according to claim 1 , wherein the condition is a sensed condition that comprises one selected from the group comprising: a change in temperature within said enclosure, a change in pressure within said enclosure, a change of gaseous composition within said enclosure, a change in humidity level within said enclosure, a change in particulate level within said enclosure, a fire within said enclosure, an explosion within said enclosure, an implosion within said enclosure, a change in amount of a particular gas within said enclosure, and a change in percentage of a particular gas within said enclosure.
8. The semiconductor processing enclosure according to claim 4 , wherein said sensor can be any one of a chamber presence sensor, a gas leak detection sensor, and emergency power sensor, or a thermal runaway sensor.
9. The semiconductor processing tool according to claim 1 , wherein said inlet, said outlet, or a combination thereof, is maintained in said restricted state prior to said presence of a condition.
10. A semiconductor processing tool with a ventilation system comprising:
an enclosed space defined by said semiconductor processing tool;
a door connected to said semiconductor processing tool;
a ventilation system in communication with said semiconductor processing tool operable between a restricted state and an open state; and
a sensor in communication with said ventilation system.
11. The semiconductor processing tool according to claim 10 , wherein said sensor is in communication with said enclosed space.
12. The semiconductor processing tool according to claim 10 , wherein said ventilation system further comprises an actuator.
13. The semiconductor processing tool according to claim 12 , wherein said actuator is connected to a movable panel, wherein said movable panel restricts air flow into said enclosed space when said ventilation system is in said restricted state and provides a less restricted air flow into said enclosed space than when said ventilation system is in said open state.
14. The semiconductor processing tool according to claim 10 , wherein said sensor senses said integrity of said enclosed space.
15. A method of selectively moving air through an enclosure used for semiconductor processing comprising:
enclosing an environment acceptable for semiconductor processing, wherein said enclosed environment further comprises a door and an inlet, wherein said inlet is operable between an open state and a restricted state;
detecting the presence of a condition; and
directing said inlet enter an open state based on the presence of the condition or a restricted state based upon the absence of the condition.
16. The method according to claim 15 , wherein the condition comprises one selected from the group comprising: a change in temperature within said enclosure, a change in pressure within said enclosure, a change of gaseous composition within said enclosure, a change in humidity level within said enclosure, a change in particulate level within said enclosure, a fire within said enclosure, an explosion within said enclosure, an implosion within said enclosure, a change in amount of a particular gas within said enclosure, and a change in percentage of a particular gas within said enclosure.
17. A semiconductor processing tool comprising:
an enclosed space defined by said semiconductor processing tool;
a movable panel attached to said semiconductor processing tool; and
a ventilation system in communication with said enclosed space and coupled to said movable panel, said ventilation system being operable between an open state and a restricted state.
18. The semiconductor processing tool according to claim 17 , wherein movement of said movable panel actuates said ventilation system.
19. The semiconductor processing tool according to claim 17 , wherein said moveable panel is a door that can be in an open or a closed position.
20. The tool according to claim 19 , wherein said ventilation system is in an open state when said door is in the open position and a restricted state when the door is in a closed position.
21. A semiconductor processing tool comprising:
an enclosed space of said semiconductor processing tool through which conditioned air is flowable;
at least one inlet operatively connected to said processing tool, wherein conditioned air external to said enclosed space enters said enclosed space through said at least one inlet;
at least one outlet operatively connected to said processing tool, wherein gases within said enclosure exit said enclosed space through said at least one outlet; and
a ventilating system operatively connected to said processing tool, wherein said ventilating system selectively adjusts said flow rate through one of said at least one inlet or said at least one outlet based on a change of at least one condition.
22. The semiconductor processing tool according to claim 21 , wherein the ventilating system maintains said at least one inlet, said at least one outlet, or a combination thereof in said restricted state prior to the change of at least one condition.
23. The semiconductor processing tool according to claim 21 , wherein said ventilating system is configured to selectively adjust said state of one selected from the group consisting of only at least one inlet, only at least one outlet, and a combination of at least one inlet and at least one outlet based on the change of at least one condition.
24. The semiconductor processing tool of claim 21 , wherein the condition is a sensed condition that comprises one selected from the group comprising a change in temperature within said enclosure, a change in pressure within said enclosure, a change of gaseous composition within said enclosure, a change in humidity level within said enclosure, a change in particulate level within said enclosure, a fire within said enclosure, an explosion within said enclosure, an implosion within said enclosure, a change in amount of a particular gas within said enclosure, and a change in percentage of a particular gas within said enclosure.
25. The semiconductor processing tool of claim 21 , wherein said condition comprises a manual adjustment by an operator.
Priority Applications (1)
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US12/017,705 US20090186571A1 (en) | 2008-01-22 | 2008-01-22 | Air ventilation system |
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Application Number | Priority Date | Filing Date | Title |
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US12/017,705 US20090186571A1 (en) | 2008-01-22 | 2008-01-22 | Air ventilation system |
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US20090186571A1 true US20090186571A1 (en) | 2009-07-23 |
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US12/017,705 Abandoned US20090186571A1 (en) | 2008-01-22 | 2008-01-22 | Air ventilation system |
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US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10622375B2 (en) | 2016-11-07 | 2020-04-14 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10665452B2 (en) | 2016-05-02 | 2020-05-26 | Asm Ip Holdings B.V. | Source/drain performance through conformal solid state doping |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10704552B2 (en) * | 2016-02-02 | 2020-07-07 | Powerex/Iwata Air Technology Inc. | Vacuum system |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US10741385B2 (en) | 2016-07-28 | 2020-08-11 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10787741B2 (en) | 2014-08-21 | 2020-09-29 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US10832903B2 (en) | 2011-10-28 | 2020-11-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US10851456B2 (en) | 2016-04-21 | 2020-12-01 | Asm Ip Holding B.V. | Deposition of metal borides |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11202397B2 (en) * | 2015-10-23 | 2021-12-14 | International Business Machines Corporation | Configurable door panels |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5397890A (en) * | 1991-12-20 | 1995-03-14 | Schueler; Robert A. | Non-contact switch for detecting the presence of operator on power machinery |
US5797790A (en) * | 1995-12-15 | 1998-08-25 | Kewaunee Scientific Corporation | Fume hood |
US6154686A (en) * | 1996-07-18 | 2000-11-28 | Innovex Technologies | Distributed architecture |
-
2008
- 2008-01-22 US US12/017,705 patent/US20090186571A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5397890A (en) * | 1991-12-20 | 1995-03-14 | Schueler; Robert A. | Non-contact switch for detecting the presence of operator on power machinery |
US5797790A (en) * | 1995-12-15 | 1998-08-25 | Kewaunee Scientific Corporation | Fume hood |
US6154686A (en) * | 1996-07-18 | 2000-11-28 | Innovex Technologies | Distributed architecture |
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USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
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US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
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US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
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US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
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US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
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US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
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US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
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US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
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US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
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US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
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US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
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US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
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US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
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US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
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US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
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US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
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US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
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US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
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US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
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US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
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US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
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US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
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