TW200903625A - Multi-station decoupled reactive ion etch chamber - Google Patents

Abstract

There is provided a processing chamber including two or more tandem processing zones, which can realize plasma isolation and radio frequency isolation. Each processing zone includes at least two radio frequencies fed into its cathode, wherein one of the radio frequencies is higher than the other one by at least two times, so as to provide the decoupled reactive ion etch capability. The chamber body of the processing chamber is connected to ground. By means of frequency isolation, multiple radio frequencies can be fed into the cathode without causing radio frequency crosstalk and beating. In addition, a plasma limiter is employed to prevent plasma crosstalk. A grounded common evacuation path is connected to the vacuum pump.

Description

200903625 九的发明说明: [Technical field to which the invention pertains] α The present invention relates to a plasma processing chamber, and more particularly to a processing area having one or more parallels, which can be read two times or more. Multi-substrate heterogeneous [Prior Art] In the fabrication of semiconductor wafers, two types of semiconductor wafer processing systems are typically employed. The first type of system currency is called a batch processing system. The main reason for using a batch processing system is that multiple wafers or substrates can be read simultaneously, so the system can provide high output throughput. However, as semiconductor system performance specifications become more stringent, the industry has switched to a second type of processing chamber, i.e., a single substrate processing chamber. The main reason for the development of the single-base domain system is that it is more convenient for the lake base (four) and the surface uniformity of the base. On the other hand, in some specific applications, attempts have also been made to provide a single-mine chamber that can process two wires simultaneously in parallel. With such fineness, it is possible to process two substrates in a time-supplied manner to ensure the advantages of the single-base treatment. U.S. Patent No. 5,811, the disclosure of which is incorporated herein incorporated herein by reference in its entirety in the in the the the the the the the the the the the the the the Light _ ashing. Gina ashing is an oxidation reaction that uses oxygen to remove organic photoresist. The photoresist is oxidized to a gas such as carbon monoxide, carbon dioxide and water vapor' and then pumped out of the processing chamber by a vacuum pump. Therefore, such applications in the semi-conducting county process papers do not require the same process uniformity as applications with more stringent metrology (such as semiconductor substrate silver engraving). Because the processing requirements for photoresist ashing are not critical, the processing chamber proposed in Patent No. 5,811, 〇22 includes two separate plasma generating chambers (tWG sepamte plasma generatk), the bottom of each plasma generating chamber is Open and connected to the processing chamber, the substrate is processed to provide two substrates. A charged particle screening program is provided between the plasma generating chamber and the substrate processing chamber to prevent charged particles from entering the substrate processing chamber, but allowing electrically neutral active particles to enter the substrate processing chamber, thereby lithography The glue is removed from the substrate. Since the structure of the substrate processing chamber is configured such that there is no separation between the filaments and the rotor body cannot be ignited, further, the use of a screening program prevents charged particles from entering the substrate. The processing chamber, the substrate processing chamber proposed in patents 5, 811, and G22 cannot be used in today's performance specifications with stricter requirements 200903625 • Applications (such as Casting County >}_), while viewing simple ashing. U.S. Patent No. 5,855,681 also proposes another deficiencies in the reading and distribution of readings (four) faces to make up for each of the equidistant branches, supplementing 5,855,681 and releasing == muscle 022 = volume. It is a process of local processing of a plurality of base segments in a single treatment process, and the patent 5,855,681 teaches that the processing chamber should have a process of "separating the two sides simultaneously, so that at the same time, The solution to isolate the processing area allows parallel processing of two substrates, which is difficult for "chamber matching, (chamW or "matchmg"). That is, it allows the two processing areas of the control room to bribe

It is difficult to deal with conditions/environment. For example, if the scribe rate of one processing area is higher than the other processing area, it is difficult to control the end point of the side process. In other words, if the point of the mask is determined based on the higher rate region, it will result in the base U in the other processing region. On the other hand, the end point of the silk art is delayed, and the high-altitude substrate will be over-etched and damaged. An improved version of the above parallel processing chamber is proposed in the Japanese Patent No. 6,962,644, in which it is known that r-a processing chamber having a plurality of mutually isolated processing regions is used in the patent 6% "Central pumping pl" makes two processes pass, but this design leads to the problem of what is technically called "RF crosstalk" (10) (10) read. In parallel processing systems Among them, RF crosstalk is extremely harmful because a processing area: the change of conditions will have a negative impact on the processing process of the second processing area. The parallel processing room also has a problem caused by "isolation" *, which is difficult The result of the processing in the two areas. In addition, the parallel processing chamber described in the patent towel uses two RF power sources. The phases and frequencies of the two RF power sources are locked together to prevent two power sources. Causes the fluctuation of the RF power pulse...(4)). This increases the structure and configuration of the processing chamber. Finally, the method of generating the rotor body in the parallel position can not be strict. Performance specification requirements. Therefore, semiconductor workers have a multi-substrate processing chamber that ensures a high level of process and process performance in each processing area of the processing chamber. SUMMARY OF THE INVENTION The present invention provides a multi-substrate processing chamber capable of separately or simultaneously adding a film or a substrate, which ensures a high level of process performance while also being proven in each of the processing chambers. The inventions are mutually compatible. The embodiments provide a processing chamber comprising two or more parallel processing zones with plasma isolation and frequency isolation performance, which can be processed from each of the two Feed multiple RF frequencies. The chamber wall is grounded and the partition wall between two adjacent areas is also grounded. The use of frequency isolation does not cause radio frequency interference and fluctuations from multiple RF frequencies fed from the cathode. A plasma confinement device is used to stop plasma crosstalk. A grounded comm〇n evacuati〇n path is also provided to connect to a single vacuum pump. A microchannel ring structure (micr〇_channds Η% structure) is provided at the inlet of the exhaust passage to limit the plasma in the treatment area so that the plasma flight does not enter the milk discharge passage and thus does not occur between the treatment regions. Plasma crosstalk. Since the present invention uses a single vacuum pump to purely thieves, the special channel is used to achieve the processing area _ pressure distribution. The ring structure also prevents RF light exposure between the two processing areas. The job is configured to be red-aged and thus does not cause no plasma sputtering' but the bottom is electrically conductive and grounded to prevent radio frequency leakage. The plasma confinement of the process chamber of the present invention prevents the occurrence of radio frequency fluctuations and thus does not require the phase and frequency of the locked RF power source as in the prior art. Moreover, since the present invention is configured with plasma confinement and radio frequency separation, each processing region can be individually processed or a plurality of processing regions can be simultaneously processed in parallel. [Embodiment] Embodiments of the present invention provide a versatile plasma chamber which can provide high-precision uniform processing in the case of high throughput. The present invention can achieve the stability and consistency of the plasma in each processing region, and the obtained process processing results meet the high precision requirements in advanced semiconductor processing. The present invention provides a multi-station decoupled reactive ion etch ehamber with a processing platform or processing region, wherein each "region is applied with multiple spread frequency work. The present invention employs Multiple hiding and design to prevent frequency fluctuations and radio frequency crosstalk between adjacent two parallel processing areas. In particular, no one has proposed to feed two cathodes in each processing area of a parallel processing chamber or More RF frequencies are used to achieve decoupling reactive ion etching. Figure 1 is a cross-sectional view of a parallel plasma processing chamber 1 绘制 according to one embodiment of the present invention, and Figure 2 is a cross-sectional line c_c in Figure 1. A cross-sectional view of the present invention will be referred to herein. The chamber body 105 is typically made of a conductive metallic material such as aluminum, and the chamber body 105 includes two parallel processing regions 110 and 115. 11〇 and ΐ5 are physically separated by the partition wall 122; in addition, a pressure equalization mechanism is used to balance the two processing areas I. The pressure between the 115 and the 'specific design will be detailed below As a detailed description, the chamber body 1〇5 (including the partition wall 122) is grounded to provide electric field isolation between the two processing regions 11A and 115, helping to avoid radio frequency crosstalk. In each of the processing regions 110 and 115 Each has a fixed cathode (12x and 125' that can be used to place the substrates 130, 135 for processing. In this embodiment, the cathodes (poles 120 and 125 are fixed because they are relative to each other) The moving cathodes 12A and 125 can be better grounded. Since the two frequencies are fed through the cathodes 12A and 125 in this embodiment, effective grounding is very important. It can be seen that this embodiment is used. Fixed cathodes have greater advantages over the prior art. Cathodes 120 and 125 include a chucking mechanism that holds the substrate in a designated position. The holding device can be any conventional clamping device, such as conventional static electricity. In addition, cathodes 120 and 125 also include a built-in electrode for radiating RF energy into the processing area. RF energy is transmitted to the cathode through RF conductors (conduct〇rs) 14〇 and 145. 120 and 125. Each of the RF conductors 140 and 145 is coupled to two RF power sources, for example, RF power sources 152 and 154 are coupled to the RF conductor 14A, and RF power sources 156 and 158 are coupled to the RF conductor 145. The two are coupled via matching circuits 153 and 157, respectively. In this embodiment, the RF power is uniformly coupled to the cathodes 120 and 125, for example, in the present embodiment, by a three-coupler ( 3-pronged coupler) implements power transfer, each three-pronged coupler has three connectors (only two connectors 15〇, 155 are shown in the cross-section), and the three connectors are separated by 120 degrees. In this embodiment, the decoupling reaction ion lithography is achieved by applying two RF frequencies on each of the cathodes and 125, wherein the two frequencies are separated by RF power and 154 _ power is the ratio of the frequencies to the low frequencies. It is set to at least greater than 2 to ensure isolation between the two frequencies. For example, low frequencies can be selected from 500 khz to 2.2 sm. One and the body 'low frequency is set to about 2 MHZ, and the second RF frequency is set to about 26 bribes. In another example, the low frequency is set to about 2 cis, and the second RF frequency is set to about 6QMhz or just Cong. The interference between the two processing regions UG and 115 in the embodiment is partly through the pair of 'work'. Sources 152 and 154 are avoided by frequency arbitration. It can achieve, for example, 'less than 1 second gamma time' and thus any disturbance in one processing region will not adversely affect its phase domain (10) process. In the present embodiment, the $tUrr surface matching circuit 153 and π are used, and each of the radio frequency matching circuits 15^=connects two radio frequency signals to a processing area (10), and a cathode a in the 115. The RF matching method proposed in 峪仁疋 Patent Application #2〇〇5/〇133163 is proposed in this patent application 2_133163. This will increase the axis matching structure. _, mining design avoids, _2_W3_ + 嶋 contact with the innovative ion of the present invention in parallel with a single RF input, a turn into the secret but eight v (four) read the case has two networks in total '; is the frequency matching RF round port. RF matching network for far-injection ion treatment chambers 200903625 The knife is a low-frequency part and a high-frequency part, and the two parts are merged at the output port by the same transfer point. The high frequency portion includes a grounding capacitor C1, a capacitor C2, and an inductance f L'. In addition, the low frequency portion includes a grounding_sub-passer through the capacitor α, and another terminal to the capacitor C2. The capacitor H C2 is connected in parallel with the inductor ϋ L to the output. The "knife" inductor L, capacitor C1 and capacitor C2 form a low-pass filter south, minute, inductor l', ground capacitor cr and capacitor cr constitute a high frequency input frequency is much higher than the low frequency input At the frequency, that is, the high-frequency input is at least 2 times (Ultra, at least ig times), due to the impedance characteristics of the high-yield plasma processing chamber _ at high-frequency input, the high-frequency part m-she is small It is possible to realize the whole ship_road and parallel (four) sub-body processing room under certain conditions, in the high-lining to make the physical power of the gods - (Ph ring will only use conductive devices (such as connecting lines) with the material connector Substituting to the lower electrode of the parallel plasma processing chamber 100. The conduction device takes the role of this. In this configuration, the self-inductance of the conductive device and the conductive connector can be substantially. At this time, the grounding capacitance 11 ci, the readable material, Conductive connector adjustment, ancient _" container instead. Due to the parasitic capacitor (10) leaf, the value is small and not easy to electrically two capacitors 11C2 ' can use adjustable capacitors to adjust the impedance of the circuit. Sense (four) value can be edited over the high and low frequency parts Frequency estimate And it is obtained by selecting the value of the capacitor 11C1. It is well known that the matching network itself has a complex impedance. Therefore, due to the circuit component's and body resistance values, the matching network towel element can be selected and adjusted. The value of the device. When the low frequency part is connected to the low frequency RF generator, the noise is read from the output 埠 to the low impedance = the buried impedance. When the high frequency part is connected to the secret gamma =, from the feed to the fine part The resulting measurement at high frequencies: the impedance at high frequencies obtained from the return to the high frequency portion is measured. = In the RF matching network shown in Figure 5, the low frequency RF energy passes through the included capacitor. And 200903625 in the fiber __ can have two branches or through inductor L' is set, so that for low frequency RF wheel = 2 impedance retreat is greater than the impedance of the parallel plasma processing chamber touch. Therefore, low frequency RF generation state The vast majority of the energy is input to the parallel plasma where the input value to the frequency-return portion of the energy can be reduced to less than 2%. σ Similarly, the high-frequency RF energy is generated by the high-frequency RF source. The electricity is connected to the material, and the current frequency of the draft has a _ branch circuit; the S sft is the low-frequency part of the input. The low-frequency part contains the parasitic capacitance, the capacitor C2 and the inductor Ϊ2H are connected in parallel. One end of the capacitor C1 Connected to this circuit configuration, increasing the estimated value of the capacitor and inductor, and entering the value of the capacitor ,, can make the low frequency part 彳 = fine tree 1 GG, for the high frequency RF input, the fine generator is input to the parallel The plasma processing chamber is not input to the low-frequency knife to burn the low-frequency RF generator. In addition, by properly selecting the value of the capacitor ci, the energy input to the low-frequency portion can be reduced to less than 2%. Fig. 1 and Fig. 2 'Process gas is supplied by a common source 16 。. Gas from ugly source _ is distributed to each processing chamber through gas nozzles 170 and 175, and in the actual case, the two gas jets The head uses a dual zone (dualz〇ne) or multi-zone gas jet. That is, as shown in FIG. 1, the gas nozzle no includes a central region 172 and a peripheral region 176, and the central region 172 and the peripheral region 6 are separated by a seal 174, and the gas pipe m transports gas to the central region π, and the gas is delivered. The bureaucracy 3 delivers gas to the peripheral region 176. The gas transmission ratio between the heart area and the surrounding area is controlled by the common source hall. In addition, the components of the gas that are rotated by the wheeled tubes 171 and 173 can be controlled by a common source. That is, conduits m and 173 can deliver different or the same gas or gas mixture. Gas nozzles m and 175 also include a built-in conductive electrode to form a ground path for the RF power source that is coupled to the respective cathodes 120 and 125. 200903625 Figure 1 also shows a central vacuum pump 180. The central vacuum pump 180 can exhaust the gases in the processing zones 110 and 115 through the exhaust port 182 of the exhaust chamber 184. The use of a single central vacuum pump 180 simplifies the construction of the entire parallel plasma processing chamber 100 and allows the parallel plasma processing chamber 100 to be more compact. Additionally, the shared vent 182 may also illustrate equalizing the pressure between the two processing zones 110 and 115. However, this design also brings about some problems, which will be explained below based on this embodiment. The following explanation relates to the processing area 110, but it should be understood that the same explanation is also applicable to the processing area 115. As shown in Fig. 1, since the exhaust port 182 is located between the two processing regions 11A and 115, it creates a slanted exhaust passage for each of the processing regions 110 and 115. For example, arrow A is the path that the particles pass along the processing region near the exhaust port 182, and arrow b is the path that the particles pass along the processing region away from the exhaust port 182. It is easy to understand that the path b is longer than the path a, which will result in a poor signal strength of the processing region 110. In order to overcome this deficiency, in the present embodiment, restriction means 190, 195 (or microchannel plasma limiting means) are provided in each processing area. Restriction device 190 is used to isolate processing region 110 and exhaust port 182 while allowing gas to be extracted from within processing region 110 in a manner that equalizes pressure along processing region 110. The restriction device 1 can be constructed using any of the rings proposed in the published U.S. Patent Application Serial No. 〇 〇 854 843. Figures 3 and 4 show that it can be used for the first! One embodiment of the restriction device of the processing chamber in the figure is referred to as a plasma limiting device, which is additionally indicated by the serial number %. Explain that (4) the rotor ship is set, and the tube 3 _ 4th ride description can provide a more complete explanation. As shown in FIGS. 3 and 4, ^ is located between the processing region 110 and the exhaust chamber 184. In the ^ ^ \u degree. In Figures 3 and 4, the forceps limiting device 70 includes a grounding electrical component 71. The grounded conductive portion ^ = the outer peripheral edge 72 and the inner wall (8) of the peripheral edge 7 to the bottom portion. In addition, the grounded conductive member 71 has a two-way suspension surrounding the exhaust chamber 184 75. As shown, a plurality of passages 76 are formed on the grounded 4 and the opposite bottom surface, and an electric raft is provided in a predetermined manner extending from the bottom surface and the top surface of the top surface, which is too! · Females are between 7Α. The grounded conductive member 71 is constructed: Datong == from the plasma of the plasma_(~.: Paste is corrected by this method, the plasma will not be burned or formed in the exhaust 〇 (8). 12 200903625

RF crosstalk between 155 and RF (in addition, this configuration also avoids crosstalk between the two processing areas). The i device 7A further includes an electrically insulating layer 80 which is located at the top surface 74 of the electrically conductive member 71 which is grounded. As indicated by the tearing, the electrical cymbals, n, and eyes extend generally radially and inwardly at the outer peripheral edge 72. The electrical insulation s is composed of a layer: a layer (as shown in the figure) or a plurality of layers. A hole above the electrical insulating layer 80 and an electrical branch ring 90. The electrical conductive support ring 90 has an outer peripheral edge 91 edge edge 72 coplanar, and there is also a _-spaced inner peripheral edge ^ conductive support ring 9 集成 integrated with the plurality of electrically conductive components % , so that ~% of the random component parts are separated from each other at a predetermined interval, and π with the grounded conductive parts: the edge, so the material is in the work of the secret material electric floating (eleCtnCalIy floatmg fr〇 m g_d). These electrically conductive components % are represented here as a set of spaced apart_rings 96 (or electrically conductive concentric _), and the circular (four) meshes serve as a set of channels 99 'the grounded conductive parts of the channel The channel is in fluid communication. Accordingly, passages 76 and 99 constitute a fluid passage that allows the reaction gas used to generate the plasma in the treatment zone to exit the treatment zone 11G and reach the exhaust port 182. In one form of the invention, the electrical component 95 can be made of a semiconductor lion material. In this case, the doping of the semiconductor material increases the electrical conductivity of the semiconductor material.

As can be seen from Fig. 4, the length of each channel 99 is greater than the average free path of any charged particles present in the plasma within the processing region. Thus, as the plasma is drawn from the processing zone 110 into the exhaust chamber 184, all of the charged particles passing through the channel 2 will strike the plurality of electrical conduction cores _%, so the charged particles arrive at the parallel plasma processing. The exhaust chamber 184 of the chamber 100 has previously been neutralized with the charge it carries. In the present invention, as shown in Figures 3 and 4, it will be appreciated that the surface of the electrically conductive component 95 (shown herein as a set of electrically conductive concentric rings 96) may be coated or wrapped with a material, The material resists plasma corrosion from the plasma generated in the processing region 110. In one embodiment of the invention, the material applied to the surface of the electrically conductive member 95 contains Y203. The coating ensures that the electrically conductive component 95 is not subject to the plasma and thus avoids the resulting fine particles. In another embodiment, the electrical transmission 13 200903625 guide 95 can be a type of conductive plate (not shown) formed by holes or holes, and the configuration of the elongated pores or holes is also set to be equidistant and narrow. The sub-pass is used to neutralize the charged particles, while allowing the shirt to pass through the charged particles and additionally encounter various alternatives of the actual =_ 71 __ hetero-contact _6 _=== plasma axis, while forming thereon Electrical = 曰 > 'includes a hard frost layer on the metal surface, water eight AR! ^ Electrical insulation, and money metal anti-hybrid. In the present invention, the electrical conductor support ring and the grounding guide, the electric layer 8 is an anodized layer, which can be made by the surface of the electric conductor 71 or the electric The grounding component 71 = » is obtained in 7G pieces. The surface of another electric support garment 0 of the present invention is anodized to 110 115 戋 contact to the tower; the right stem _ 96 and the passage 76 in the 95 are oriented toward the treatment area; ::!; 'As another embodiment of the present invention' ===== The block can cause electrical conduction and electrical power to similarly place the electrically conductive component 95 in a floating state. Grounded rotor postal _ (four) Kawasaki _ _ 7 〇 contains %. Here, the electrically conductive and floatable electrical conductive member located thereon is provided with a plasma shield, and an RF shield. That is, the 'floating electrical conductive member % constitutes a plasma concealing active particle passing therethrough, and the grounded conductive member 71 constitutes a radio frequency mask to prevent the ejection amount from passing therethrough. The floatable Wei conductive part % defines a set of channels 99, 14 200903625. By means of which the processing area 110 can be subjected to a suction process in a controlled manner. These channels 99 have a dimension to quench charged particles while allowing neutral particles to pass. In this manner, the restriction device 7 can control the pumping operation of the processing region 11 to generate a uniform pressure throughout the processing region 11 to prevent charged particles from entering the exhaust port 182 'to prevent radio frequency light The vent 182 is closed to prevent plasma from being excited at the vent 182, and radio frequency crosstalk between the processing regions 11 and 115 is also avoided. Another feature of this embodiment is the spacer ring 132 shown in FIG. The spacer ring 132 is movable in the direction of the sinus, as indicated by the arrow 〇. In order to move the substrate 13G into or out of the process r region 110, the spacer ring 132 needs to be moved to a higher position to expose the loading and unloading groove (9). After the substrate 130 is placed on the cathode 120, the partition 132 is moved to a lower position as shown in Fig. 2. At the private position, the processing area 11 defined by the isolating ring 2 is symmetrically circular and the loading and unloading groove 134 is "hidden" behind the spacer ring 132 so that it does not come into contact with the plasma. The area that the plasma can contact is the circular b_daiy defined by the isolation ring. That is, at the lower position, each isolation ring I32 defines for each processing area 11〇U5. A peripheral boundary (4) is finely ^ 匕 ^ ^ ^ ^ ^ ^ each each ^ ^ ^ ^ ^ ^ ^ ^ ^ 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外Abbreviated as chamber wall) and plasmon (the daughter is isolated from each other _ate). That is, the thickness τ can be reasonably calculated and valued, and the RF return path (RFretumpath) can be prevented from passing through the grounded chamber wall. In this way, the RF return path is controlled by the charm gas nozzle 17G, which is returned as the upper electrode. The isolation % 132 can also be used for the migration equalization (four) surface called (four), an example. Processing room 6. The first diagram and the second 丄=^ are not drawn to illustrate 'and only the additional inventive features shown in Fig. 6 are specifically explained. The sixth embodiment shows that there is a setting between the two processing regions. In this case, the dynamic equalization mechanism is moved to the wall 682 through the isolation ring 632 632 to provide a channel (10) coffee e_. When the isolation ring is sand main, when compared to the π position, as indicated by the arrow D, Channel 684 allows gas to pass freely between treatment zones _ 15 200903625 and 615. Additionally, pressure equalizing passages 634, 636 are also disposed in isolation ring 632. When the isolation ring is placed in a lower position, As shown in Fig. 6, the pressure equalization passages 634, 636 and the passage 684 together form a path. In this manner, the pressure in the treatment regions 610 and 615 can be achieved by paths 634, 684 and 636 in fluid communication with each other. It is understood that 'because the present invention is configured with plasma confinement and radio frequency separation, each of the processing regions 610 and 615 can be processed separately or multiple processing regions 61 and 615 can be simultaneously paralleled. The process is performed, and the plurality of processing regions 61A and 615 can have the same plasma processing conditions/environment. Thus, the "processing platform matching" in the prior art is solved. Figure 7 provides another embodiment of the invention in which both cathodes are applied with a plurality of radio frequency powers. The actual details given in Figure 7 can be implemented by modifying other embodiments of the patent, or by other implementations not provided herein. The specific embodiment given in the seventh embodiment uses the embodiment given in Fig. 1 and similar reference numerals are used for similar components, except that they are labeled according to the 7〇〇 series instead of the 1〇〇 series. Parts of. β does not correspond to Figure 7. Each of the cathodes 72A and 725 receives three RF frequencies. The purpose of this is to control the engraving process by independently controlling the plasma density and ion energy. That is, one or two fresh can be laid out by the _ sub_ energy. The plasma dice energy frequency should be chosen to be in the lower range, for example, one frequency is selected in the range of 5 〇〇 khz_2 MHz, and the other is selected 13 MHZ (more precisely, 13 56 MHZ) (> these frequencies are often referred to as Bms frequency. The density of the plasma can be controlled by higher frequencies, such as 6 〇 MHZ, 1 〇〇 MHZ or I60 MHZ ' This is often referred to as source equency. A single offset frequency and a pair of source frequencies can be used. For example, the value of a single offset frequency can be selected within 5GGkhz_2 or choose η聪. The value of the source frequency can be 27 Cong, 6〇 Cong, Lion Pang or Qing Dirty. Red is a specific ^ used a bias frequency of 754, 756, and is set to 2MHZ ^ and uses two source frequencies: the source frequency of the cathode 72〇 752, 751 and with = The source frequency of the cathodes ^2, 5 is 7S8 and sand. One of the source RF frequencies is set to 27 Cong, and the other is β 60 KZ. The mismatch can provide better control of the dissociation of the plasma particles. 16 200903625 The other scale of the embodiment given in Figure 7 is The systems 763 and 767 enable the present embodiment to dissociate the plasma in a plurality of switches that can be switched from 767°. By using the switch 763 and the further control is used at the returning body _ 7QQ towel 1 _ It can be operated in the first stage. In the first stage, the first combination of stage 752, 75^, 759, in the second stage = 756 and the second combination of the source frequency and the source frequency 752, 751, 758, 759. For example, m is biased. The frequency is 754,756 to use the low offset frequency (for example, about 2_ for the main money phase = the ^^ = in order to achieve a "soft landing," the system will be switched to work in the set 4 ΠΜΗΖ. Another aspect, parallel plasma The volume of the chamber is 7〇〇=frequency, such as 752, 751, 758, 759, ^; ^ The sheet will be removed from the parallel plasma processing chamber 7〇〇, which is higher for the 存 疋 后 后 后 后 * — — — — — In the degree of ionization, the plasma is cleaned up. The more dense plasma can be obtained in frequency, such as 60 ΜΗΖ, 卿, or 16 ζ. The frequency source diagram shows the implementation according to an embodiment of the present invention _ An example of the offset frequency for processing * This jade art can be, For example, in the side, the source source is excited to bombard the plasma. The source is shot at steps 800, 60, ΜΗΖ, 16, etc. in the step, applied to the processing chamber to generate dissociated ions to bombard the substrate (third - The work _ bias frequency is motivated and slammed "Step 820 of the process of stopping the move is a process". i After the cow, the first offset is determined in step (4) _ _ _ _ rush, The lower bias bias power is energized' to perform a second process step 850. In this case two: 约 about 2 Satoshi' second offset frequency is about 13 Pont. In the case of Hall 2, the source should be at least 2 times higher than the standard, and the preferred implementation is more than 乂. On the other hand, when the bias is rarely 13Μηζ, the source frequency can be 2's. When the bias frequency is 13 dirty, the source frequency can be twice its 27,) 'or five times (ie (9) dirty), or Higher (clear bribe or (10) dirty). Fig. 9 is an example of the principle of performing the work according to the present invention. For example, the process can be, for example, a semiconductor substrate and a "in situ" monthly wash process. In step _, the first source RF power source is excited to a wire plasma. 17 200903625 The source RF power source The frequency can be 27 MHz. In step 810, the bias frequency is energized and applied to the processing chamber to generate dissociated ions for bombarding the substrate for etching process steps (step 920). When the etching process is complete, The bias power is turned off in step 93, and the substrate is removed from the processing chamber in step 935. The second source power is then initiated in step 94 to perform the cleaning step (step 950). In this case, second The frequency of the source power can be 6 〇 MHZ, 丨〇〇 MHZ or 160 MHZ. Finally, it should be understood that the processes and techniques described herein are not directly related to any particular device, and that it can be implemented with any suitable combination of components. In addition, various types of Tongxian parts can be applied according to the content taught by the present invention. It is also possible to manufacture specialized equipment, and the method and the steps described in the patent 'and Advantages of the Invention The present invention has been described with reference to specific embodiments, all of which should be exemplary sugars and heterogeneous. Those skilled in the art will recognize that they are not hardware, software and firmware. Combinations are applicable to the implementation of the present invention. For example, the software can be described in a variety of programs or instruction code languages, such as assembly, C/C++, perl, SHELL, PHP, JAVA, etc. The description of the financial formula, but all of them are intended to be illustrative rather than == to study the features and implementation of the invention disclosed in this patent, familiar with the invention, and the true scope and spirit of the implementation of the present invention is Patent application details [schematic outline] ^ ^ ^ diagram outline - an embodiment of the pot parallel plasma processing chamber section showing: Figure 2 is a cross-sectional view of Figure 1 along the line CC. Figure 3 is this The fate of the rotor is the same as that of the lang--the real picture is the plasma limit of the figure shown in Figure 3, ^: Figure 5 is the structural sound map of the RF (10) network of the Fortune. Section W. Figure 6 shows an embodiment, shooting the two points of the rope field 7th Out of the bar----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- Fig. 9 shows an example of processing using two source frequencies according to an embodiment of the present invention. [Main element symbol description] Parallel plasma processing chamber. Room body.... .....105,705 Processing area...... ....... 110,115,710,715 Cathode.···································· ...122,722 Substrate.......·...130,135,730,735 Isolation Ring.......132 Cracker.............134 Radio Frequency Conductor. ..... .......140,145,740,745 Connector...·......150,155,750,755 RF Power Source.................152,154 Matching Circuit.. ...· .......153,157,753,757 RF power source.................156,158 Shared source..................160,760 gas nozzle... ..· .......170,175,770,775 Air pipe...................171,771 Central area · . · · · · .......172,772 wheel air pipe..... · ......173,773封.......· .....174,774 Peripheral area·.................176,776 Central vacuum pump.................180,780 Exhaust port ....... ......182,782 Inner wall........ 19 200903625 Exhaust chamber.............184,784 Restriction device... .......70,190,195,790,795 Source frequency..................751,752, 758,759 Offset frequency.............754,756 Switching switch..... ........763,767 Conductive parts..................71 External peripheral edges··.....72 Internal peripheral edges..... ........73 Top surface.............74 Bottom surface........... · · 75 channels........ .....76 Electrical insulation layer.............80 Electrically conductive support ring.............90 External peripheral edge... .......91 Internal Peripheral Boundary.............92 Electrically Conductive Parts.............95 Electrical Conduction Rings..... ........96 Channel··...........98,99 Processing area..................610,615 Isolation ring... .......632 Pressure equalization path.............634,636 Separate wall....... 682 Channel............ .684

Thickness.............T 20

Claims (1)

200903625 X. Patent Application Range: 1. Two kinds of special ion processing chambers comprising at least two processing regions capable of processing at least two substrates individually or simultaneously, comprising: a processing chamber body comprising at least two ionizing bodies a region, each of which has a cathode at a lower position and an anode chamber body at the upper portion of the treatment region including an exhaust passage; at least one vacuum pump connected to the exhaust passage; The RF matching circuit 'each axis matching circuit rotates at least one first face rate and the second face to one of its cathodes; wherein the first RF frequency is higher than the second RF frequency. 2. If you apply for a patent range! The plasma processing chamber of the present invention further includes at least two: plasma bridging relays, each ionic age being placed adjacent to a respective cathode for preventing plasma from entering the exhaust passage from the processing region. 3. The plasma processing chamber of claim 2, wherein each of the plasma confinement devices comprises a plasma mask and a radio frequency mask. 5. The plasma processing chamber of the third aspect of the invention, wherein the plasma shield comprises a conductive but Wei-floating component. ^The plasma processing chamber of the patent application of item i further comprises at least two movable insulation gaps, each of which is located at the position of the mine, and each of the spacers is located at a lower position of the ring. The line of divisions defines the perimeter boundaries. The plasma processing chamber of claim 5, wherein the processing area is provided with a ground (four), and the thickness of each isolation ring is designed to be grounded to the wall by RF energy masking . 7. The plasma processing chamber of clause 6, wherein each of the isolation rings comprises at least one pressure equalization passage. 8. The plasma processing chamber of claim 7, further comprising two processing regions spaced apart, the spacer wall comprising a pressure equalization channel. % is located in its excess i, the frequency is both the same as the touch of the contact phase. 21 200903625 ίο. Such as the scope of patent application! The plasma processing chamber of the present invention further includes a conductor, each of the females will smash the 2nd to the age-receiving pole of the shooting ship, and each of the RF material bodies includes a uniform distribution of the sturdy阴: connection, in order to ride the hybrid heat _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , a combination of the end of the ancient end and the combined output end of the combination of a high secret circuit, at the input of the shop and =: the end of the wheel - a storage matching circuit, wherein the high frequency matching circuit for the - and the fourth face rate has a high impedance, and the low aeronautical frequency has a high impedance. The plasma processing chamber of claim 10, wherein the first radio frequency is selected from about 27 MHz, about 60 MHz, or about 100 MHz. 12. The plasma processing chamber of claim 1, wherein the second radio frequency is selected from the range of about 500 kHz to 2.2 MHZ. K. For example, in the plasma processing chamber of the patent application, wherein each of the RF matching circuits also couples a third RF frequency to a corresponding cathode. The plasma processing chamber of the thirteenth patent scope of the patent application also includes a plurality of switchers, Each of the cut sides _ is switched on the first, second and third sides. 15. A parallel plasma etching chamber, comprising: a conductive chamber body having a first processing region and a second processing region, the chamber body further having a partition wall for dividing the first regulatory domain and the second electrical domain Separating, the resident body further includes an exhaust chamber in fluid communication with the first processing region and the second processing region, the exhaust gas having a single exhaust port, the chamber body being grounded; a vacuum pump, The exhaust port is connected; the first fixed cathode is fixed at the bottom of the first processing region, and includes a first chuck for supporting the substrate; the first gas nozzle 'fixed to the upper portion of the first processing region, and includes the first An electrode; a second fixed cathode fixed to the bottom of the second processing region and including a second chuck for supporting the substrate; 22 200903625 a second gas nozzle fixed to the upper portion of the second processing region and including the second electrode The common gas source 'provides a process gas for the first gas nozzle and the second gas nozzle, and the first-radio matching circuit 'couples at least one of the shed and the frequency to the first cathode; A matching circuit, while at least - a low RF frequency and - a second radio frequency of consumption of a cathode bonded to; wherein the I «iv frequency fresh ΑλΙ, is at least two times the size of the exit surface low rate. 16. The parallel plasma reticle chamber of claim 15 of the patent application scope, further comprising: a first material woven, a test rotor gambling first processing zone: a gas to 'and a second smear second A rotor body restraining device for preventing plasma from entering the exhaust chamber from the second processing region. The device uses the parallel plasma side chamber of item H16, and the second plasma confinement device comprises a plurality of first body masks comprising electrically conductive 仃f ion side chambers, wherein the plasma component. - Electrical/pre-ground, the radio frequency mask comprising a grounded conductive 1...a parallel plasma chamber as described in item 5, further comprising: a first-movable Wei edge partition located in the 11th domain towel a second movable insulating spacer in the domain; a second movable insulating spacer etch chamber 'where the first- and first-frequency energy masks. /, the thickness of the crucible, the grounded chamber wall can be shot 21. As in the patent application scope 20th movable insulating spacer ring respectively, the parallel plasma side chamber, wherein the first and second 22 · as claimed in the scope of the patent; ^ Contains at least one pressure equalization path. a parallel plasma reticle including a pressure equalization channel, wherein the isolation wall is provided with first and second movable insulating spacers at pressure positions on the lower 23 200903625 and the second movable insulating spacer The pressure equalization channel is in communication with the first equalization path. 23. The parallel plasma etch chamber frequency as described in claim 15 is in the range of about 500 kHz to - i A jin, which is a low frequency shot to 2.2 MHZ, and the 咼 frequency RF frequency is 27 MHz, 60 MHz, and 100 MHz. According to J 24. The parallel plasma narration chamber as described in claim 15 of the patent application, the second switch including the first sigh of the disk and the second sigh of the second ship can be thankful Each of the first and second switching switches is selected to obtain the low frequency radio frequency from the two low frequency radio frequencies as follows; or obtain the duty ratio from the two high __ rate towels. 25. The parallel plasma button engraving chamber of claim 5, wherein each of the wide area and the second processing area is capable of standing on the other side = 26.- The decoupling reactive ion etching chamber comprises: the conductive chamber body' includes a plurality of processing regions and a partition wall separating the plurality of processing regions from each other, and the partition is provided with a road of secret money surface __ force; The button further includes at least one and the plurality of surface area flow chambers; the chamber body is grounded; & at least one vacuum pump is connected to the exhaust chamber; P 'and includes one night cathode 'each cathode a bottom biting device fixed to its corresponding processing area for supporting the substrate; a plurality of gas nozzles 'each of the money face to the upper portion of the corresponding field and including an electrode; a common gas source for the plurality A gas nozzle provides a process gas; a plurality of radio frequencies are fed to one of the respective cathodes simultaneously with each of the at least - Wei scale ratio and the RF frequency. 27. For example, the cap is full of the 26th Jewish anti-ship _ room, and also includes a plurality of plasma limiting devices. Each of the plasma-closing devices is located near its corresponding cathode for preventing plasma from entering the processing area. Exhaust chamber. 24 200903625 The decontamination reaction ion button chamber of the twenty-seventh item, wherein each of the 箸^ devices comprises a plasma mask and a radio frequency mask. Μ H ^ 利范围范围 The third paragraph to deal with the reactive ion chamber, wherein the plasma, 匕 3 conductive but electrically floating components, the RF mask contains grounded conductive components SI The age-reactive ion reverberation chamber also includes the ^, and the recording isolation ring 'is difficult to isolate in each ship edge--the inner boundary of the corresponding processing area when the % is at its low position. A ^3, the de-energized reactive ion refinement chamber of the third aspect, wherein each of the insulating garments has a thickness such that the grounded chamber wall is covered by radio frequency energy. A == The decoupling reactive ion etch chamber, wherein each of the insulations has a pressure equalization path, and the C-force equalization path is in fluid communication with the pressure equalization channel when the insulating isolation ring is at its lower position.