JP2012195513A - Plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of depositing a high quality film efficiently.SOLUTION: The plasma processing device comprises a support base 34 which is disposed in a processing container and supports a processed substrate W thereon, a gas supply mechanism 61 for supplying a film-forming gas, or the like, having a planar head 62 which can move to a first position where a small volume region S can be formed between the support base 34 while covering the upper side thereof and to a second position different from the first position, and provided with a first gas supply hole 68 for supplying the film-forming gas so as to open to one surface side, and a gas exhaust mechanism for exhausting gas having a gas exhaust hole 70 provided on the outside of the processed substrate W supported on the support base 34.

Description

  The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus used for manufacturing semiconductor elements.

  2. Description of the Related Art Conventionally, high breakdown voltage characteristics and excellent leakage characteristics are required for a gate oxide film of a semiconductor element typified by an LSI (Large Scale Integrated Circuit), a CCD (Charge Coupled Device), a MOS (Metal Oxide Semiconductor) transistor, or the like. When forming an insulating layer, it is common to use a thermal CVD (Chemical Vapor Deposition) method. However, when a silicon oxide film requiring high insulation is formed, the silicon substrate needs to be exposed to a high temperature according to the above-described film formation of the silicon oxide film by thermal CVD. Then, when a conductive layer or the like is already formed on the silicon substrate with a relatively low melting point material, for example, a low melting point metal or a polymer compound, there is a problem that the low melting point metal is melted.

  On the other hand, from the viewpoint of high integration of devices in recent years, there is a demand for step coverage and uniformity to a three-dimensional structure and the like, and high quality film quality free from impurities and physical defects in the insulating film and at the interface. As a technique for solving these problems, an effective method is an ALD (Atomic Layer Deposition) method capable of performing film formation by periodically supplying a reaction gas corresponding to an atomic unit to the substrate surface and performing highly accurate film thickness control. It is known to be one of

  Here, a technique for executing different deposition processes in a single chamber, that is, one chamber (processing vessel) using the ALD method is disclosed in Japanese Patent Application Laid-Open No. 2007-138295 (Patent Document 1). .

JP 2007-138295 A

  In recent years, from the viewpoint of improving the characteristics required for semiconductor elements, improvement in film quality, such as further thinning of the film formation and uniformity of the film thickness of the formed thin film, is required.

  According to Patent Document 1, an atomic layer deposition process or a plasma enhanced chemical vapor deposition process (PECVD) is performed in a state where the substrate stage is raised and brought close to the upper assembly, and the upper assembly is lowered by lowering the substrate stage. The plasma process is performed in a state away from

  In the process disclosed in Patent Document 1, in the atomic layer deposition process, first, the substrate stage is brought close to the upper assembly. Then, a precursor gas is supplied into the chamber, an atomic layer is deposited on the surface of the substrate placed on the substrate stage, and the layer is formed by heating. Thereafter, the substrate stage is moved away from the upper assembly. In the plasma processing process, a plasma processing gas is supplied into the chamber, and a layer is formed by plasma CVD processing using the generated plasma. Such a series of steps is repeated until a desired film thickness is reached. In other words, a layer having a desired film thickness is formed by performing a cycle including the atomic layer deposition process and the plasma treatment process several times.

  However, such a process may not improve the throughput. That is, according to Patent Document 1, it takes time to fill a chamber with a gas necessary for each process in both the atomic layer deposition process and the plasma processing process. Furthermore, it takes time to set the optimum pressure required for processing in the chamber for each process and time for exhausting the filled gas for the next process.

  There is a limit to shortening the time required to fill the gas and the time required to obtain the optimum pressure. If such a time occurs in each cycle, it takes much time as a result to form a layer having a desired film thickness.

  An object of the present invention is to provide a plasma processing apparatus capable of improving throughput and forming a high-quality film.

  A plasma processing apparatus according to the present invention includes a bottom part located on the lower side and a side wall extending upward from the outer peripheral side of the bottom part, and is capable of sealing, and a processing container for performing plasma processing on the substrate to be processed therein, A small volume region disposed between the support table disposed in the processing container and supporting the substrate to be processed thereon, plasma generating means for generating plasma in the processing container, and the support table covering the upper side of the support table The first gas supply hole for supplying a film forming gas is provided so as to open to one surface side. A film forming gas supply mechanism for supplying a film forming gas, and a blocking mechanism for blocking a small volume area from the space in the processing container when the head section is at the first position. Is provided.

  According to such a plasma processing apparatus, the head portion is in the first position, that is, the head portion covers the upper side of the support base, and a small volume region is formed between the support base and the head portion. In a state where the small volume region is blocked from the space in the container, the film forming gas is supplied. Then, since the supply of the film forming gas is a region narrower than the space of the processing container, it is possible to shorten the time required for supplying the film forming gas and the time for adjusting the pressure. In addition, since the small volume region is formed so that the head portion covers the upper side of the support base, plasma is continuously generated in the processing container while the deposition gas is supplied to the processing target substrate. I can keep it. Then, after film formation, the head portion can be moved to the second position and plasma processing can be performed as it is, and the time required to generate and stabilize the plasma and the pressure in the processing container are optimal for plasma processing. It is possible to omit the time required to obtain a proper pressure. Therefore, the time required for the plasma treatment can be shortened. In this case, since the small volume region is blocked from the space in the processing container, the inner wall surface of the processing container is not exposed to the film forming gas when performing the plasma processing. It is possible to suppress the adhesion of the reaction product to the substrate, to suppress the generation of particles, and to reduce the number of cleaning steps for the inner wall surface of the processing container. Therefore, according to such a plasma processing apparatus, throughput can be improved and a high-quality film can be formed.

  Preferably, the shut-off mechanism includes a gas exhaust mechanism that has a gas exhaust hole provided on the outer side of the substrate to be processed supported on the support base and exhausts the gas.

  More preferably, the shut-off mechanism is provided at the periphery of the substrate to be processed supported on the support base, has a second gas supply hole capable of supplying a purge gas, and supplies the purge gas from the second gas supply hole. A purge gas supply mechanism is included.

  More preferably, the second gas supply hole is provided on the outer side of the gas exhaust hole.

  More preferably, the purge gas supply mechanism supplies the purge gas so as to be out of the small volume region.

  More preferably, at least one of the gas exhaust hole and the second gas supply hole is provided in the radial direction.

  More preferably, the gas exhaust hole is provided in the head portion, and the purge gas supply mechanism includes a purge gas supply member provided on the outer side of the support base and provided with a second gas supply hole.

  More preferably, at least one of the gas exhaust hole and the second gas supply hole is provided in an annular shape.

  More preferably, the gas exhaust hole is provided in the head portion, and the film forming gas supply mechanism is a position facing the gas exhaust hole on the outer side of the substrate to be processed supported on the support base, Includes a detachable focus ring on the support base.

  More preferably, the film forming gas supply mechanism includes a support portion that extends from the side wall side and is connected to the head portion and supports the head portion, and the gas exhaust mechanism is provided inside the support portion and communicates with the gas exhaust hole. The film forming gas supply mechanism includes a gas exhaust passage serving as a passage for the exhausted gas, and is provided inside the support portion and communicates with the first gas supply hole to provide a first film forming gas passage. The first gas supply path is provided in multiple so as to be inside the gas exhaust path.

  More preferably, the processing container is formed such that a part of the side wall extends outward, and is provided with a housing portion that can accommodate the head portion. The gas exhaust mechanism exhausts gas when the head unit is located in the processing container, and the purge gas supply mechanism supplies purge gas when the head unit is positioned in the storage unit.

  As a more preferred embodiment, the second gas supply hole and the gas exhaust hole are the same hole.

  More preferably, the apparatus includes a substrate movement mechanism capable of at least one of supporting the substrate to be processed on the support table and removing the substrate to be processed supported on the support table.

  As a further preferred embodiment, the target substrate moving mechanism includes a mounting portion on which the target substrate can be mounted and is relatively rotatable with reference to a predetermined location. Then, at least one of the support of the substrate to be processed on the support base and the removal of the substrate to be processed supported on the support base by the relative rotational movement of the mounting portion with respect to the predetermined location You may comprise so that it may perform.

  In addition, a first exhaust system for exhausting the processing container and a second exhaust system for exhausting the small volume region are provided, and the first exhaust system and the second exhaust system are separately provided. You may comprise so that it may be provided.

  More preferably, the plasma generation means includes a microwave generator that generates a microwave for plasma excitation, and a dielectric window that is provided at a position facing the support base and introduces the microwave into the processing container.

  As a further preferred embodiment, the plasma generating means includes a slot antenna plate which is provided with a plurality of slot holes and which is disposed on the upper side of the dielectric window and radiates microwaves to the dielectric window.

  According to such a plasma processing apparatus, the head portion is in the first position, that is, the head portion covers the upper side of the support base, and a small volume region is formed between the support base and the head portion. In a state where the small volume region is blocked from the space in the container, the film forming gas is supplied. Then, since the supply of the film forming gas is a region narrower than the space of the processing container, it is possible to shorten the time required for supplying the film forming gas and the time for adjusting the pressure. In addition, since the small volume region is formed so that the head portion covers the upper side of the support base, plasma is continuously generated in the processing container while the deposition gas is supplied to the processing target substrate. I can keep it. Then, after film formation, the head portion can be moved to the second position and plasma processing can be performed as it is, and the time required to generate and stabilize the plasma and the pressure in the processing container are optimal for plasma processing. It is possible to omit the time required to obtain a proper pressure. Therefore, the time required for the plasma treatment can be shortened. Even during the plasma treatment, the inner wall surface of the processing vessel is not exposed to the film forming gas, so that the adhesion of reaction products to the inner wall surface of the processing vessel and the generation of particles are suppressed. The number of wall surface cleaning steps can be reduced. Therefore, according to such a plasma processing apparatus, throughput can be improved and a high-quality film can be formed.

It is a schematic sectional drawing which shows a part of MOS type semiconductor element. It is a schematic sectional drawing which shows the principal part of the plasma processing apparatus which concerns on one Embodiment of this invention. It is the figure which looked at the slot antenna board contained in the plasma processing apparatus shown in FIG. 2 from the plate | board thickness direction. It is a graph which shows the relationship between the distance from the lower surface of a dielectric material window, and the electron temperature of plasma. It is a graph which shows the relationship between the distance from the lower surface of a dielectric material window, and the electron density of plasma. It is the figure which looked at a part of head part contained in the plasma processing apparatus shown in FIG. 2 from the direction of arrow III in FIG. It is sectional drawing which shows a part of head part shown in FIG. 6, and is an expanded sectional view of the part shown by VIII in FIG. FIG. 3 is a schematic cross-sectional view showing a state in which the head portion is housed in the housing portion in the plasma processing apparatus shown in FIG. 2. It is a figure which shows roughly the sequence at the time of supplying gas to the to-be-processed substrate W in the film-forming gas adsorption | suction process. It is a simple chart figure which shows the flow of a process. It is a schematic sectional drawing which shows some gas supply mechanisms etc., and shows the case where only argon gas is supplied from a 1st gas supply hole. It is a schematic sectional drawing which shows some gas supply mechanisms etc., and shows the case where the film-forming gas which mixed argon gas and precursor gas is supplied from a 1st gas supply hole. It is a graph which shows the relationship between the gas flow rate in the whole processing container, and the arrival time until it reaches | attains a predetermined pressure. It is a graph which shows the relationship between the gas flow rate in the small volume area | region formed between a support stand and a head part, and the arrival time until it reaches | attains a predetermined pressure. 6 is a graph showing changes in alignment time and tuner position. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus concerning other embodiments of this invention is equipped. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is a figure which shows roughly the sequence at the time of forming the to-be-processed substrate W into a film using the plasma processing apparatus shown in FIG. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is an expanded sectional view which expands and shows a part of head part and support stand with which the plasma processing apparatus which concerns on further another embodiment of this invention is equipped. It is a schematic sectional drawing which shows a part of plasma processing apparatus which moves so that a head part may rotate to an up-down direction. It is a schematic sectional drawing which shows the principal part of the plasma processing apparatus in which a head part can move to a horizontal direction. It is a schematic sectional drawing which shows the principal part of the plasma processing apparatus in which a head part can rotate in a horizontal direction. It is a schematic sectional drawing which shows the structure of a part of the base part vicinity among the support parts shown in FIG. FIG. 29 is a schematic cross-sectional view showing a configuration of a part near the root portion of the support portion shown in FIG. 26, and corresponds to a cross section when the cross section shown in FIG. 28 is rotated 90 degrees. FIG. 29 is a schematic cross-sectional view showing a configuration of a part near the root portion of the support portion shown in FIG. 26 and corresponds to a XXX-XXX cross section in FIG. 29. It is a schematic sectional drawing which shows a part of plasma processing apparatus which has two exhaust systems. It is a figure which shows the flow of the exhaust_gas | exhaustion in a plasma processing apparatus with one exhaust system. It is a figure which shows the flow of the exhaust_gas | exhaustion in the plasma processing apparatus which has two exhaust systems. It is a schematic sectional drawing which shows the principal part of a plasma processing apparatus provided with the head part which can go back and forth in the 1st and 2nd process space. It is the schematic which shows the structure of a plasma processing system roughly. It is a schematic perspective view which shows roughly the support stand vicinity which can rotate. It is a schematic perspective view which shows roughly the fixed support stand vicinity. It is a schematic sectional drawing which shows a part of support stand at the time of supporting and removing the to-be-processed substrate W by a pin, and shows the state by which the to-be-processed substrate W was supported on the support stand. It is a schematic sectional drawing which shows a part of support stand at the time of supporting and removing the to-be-processed substrate W by a pin, and shows the state which mounted the to-be-processed substrate W on the upper side edge part of the pin. It is a schematic sectional drawing which shows a part of support stand at the time of supporting and removing the to-be-processed substrate W by a pin, and shows the state which exists in the position where the upper surface of the mounting part and the lower surface of the to-be-processed substrate W faced. It is a schematic sectional drawing which shows a part of support stand at the time of supporting and removing the to-be-processed substrate W by a pin, and shows the state which mounted the to-be-processed substrate W in the mounting part.

  Embodiments of the present invention will be described below with reference to the drawings. First, the configuration of a semiconductor element manufactured by a plasma processing apparatus according to an embodiment of the present invention will be described. FIG. 1 is a schematic sectional view showing a part of a MOS type semiconductor device manufactured by a plasma processing apparatus according to an embodiment of the present invention. In the MOS type semiconductor device shown in FIG. 1, the conductive layer is indicated by hatching.

  Referring to FIG. 1, MOS type semiconductor element 11 includes element isolation region 13, p-type well 14a, n-type well 14b, high-concentration n-type impurity diffusion region 15a, high-concentration p-type impurity on silicon substrate 12. Diffusion region 15b, n-type impurity diffusion region 16a, p-type impurity diffusion region 16b, and gate oxide film 17 are formed. One of the high-concentration n-type impurity diffusion region 15a and the high-concentration p-type impurity diffusion region 15b formed so as to sandwich the gate oxide film 17 is a drain, and the other is a source.

  In addition, a gate electrode 18 serving as a conductive layer is formed on the gate oxide film 17, and a gate sidewall 19 serving as an insulating film is formed on a side portion of the gate electrode 18. Furthermore, an insulating film 21 is formed on the silicon substrate 12 on which the gate electrode 18 and the like are formed. In the insulating film 21, a contact hole 22 that is continuous with the high concentration n-type impurity diffusion region 15 a and the high concentration p-type impurity diffusion region 15 b is formed, and a buried electrode 23 is formed in the contact hole 22. Further, a metal wiring layer 24 serving as a conductive layer is formed thereon. Further, an interlayer insulating film (not shown) to be an insulating layer and a metal wiring layer to be a conductive layer are alternately formed, and finally a pad (not shown) to be a contact point with the outside is formed. Thus, the MOS type semiconductor element 11 is formed.

  In a semiconductor element manufactured by the plasma processing apparatus according to the present invention, as will be described later, a silicon oxide film formed by adsorbing a film forming gas on a substrate to be processed and performing plasma processing, for example, a gate An oxide film 17 is included. The insulating film formed by the plasma processing apparatus according to the present invention is a silicon oxide film that constitutes the gate oxide film described above, and the plasma processing is performed by adsorbing the film forming gas onto the substrate to be processed. A film is formed.

  Next, the configuration and operation of the plasma processing apparatus according to one embodiment of the present invention will be described.

  FIG. 2 is a schematic cross-sectional view showing the main part of the plasma processing apparatus according to one embodiment of the present invention. 3 is a view of the slot antenna plate included in the plasma processing apparatus shown in FIG. 2 as viewed from the lower side, that is, from the direction of arrow III in FIG. In FIG. 2 and FIG. 8 to be described later, some of the members are not hatched for easy understanding. Moreover, the plasma generated in the processing container is schematically shown by a two-dot chain line in FIG. 2 and FIG. 8 described later.

  2 and 3, the plasma processing apparatus 31 includes a processing container 32 that performs plasma processing on the substrate W to be processed therein, and a plasma processing apparatus that supplies a reactive gas for plasma processing into the processing container 32. A gas supply unit 33, a disk-like support 34 for supporting the substrate W to be processed thereon, a plasma generating mechanism 39 for generating plasma in the processing vessel 32, and a film forming gas and a purge gas are supplied. A gas supply mechanism, a gas exhaust mechanism that exhausts gas, and a control unit (not shown) that controls the entire plasma processing apparatus 31 are provided. The control unit controls the entire plasma processing apparatus 31 such as the gas flow rate in the gas supply unit 33 for plasma processing and the pressure in the processing container 32.

  The processing container 32 includes a bottom portion 41 located on the lower side of the support base 34 and a side wall 42 extending upward from the outer periphery of the bottom portion 41. The side wall 42 is substantially cylindrical except for a part. An exhaust hole 43 for exhaust is provided in the bottom 41 of the processing container 32 so as to penetrate a part thereof. The upper side of the processing container 32 is open, and a lid 44 disposed on the upper side of the processing container 32, a dielectric window 36 described later, and a seal member interposed between the dielectric window 36 and the lid 44. The processing container 32 is configured to be hermetically sealed by an O-ring 45 as a sealing member.

  The plasma processing gas supply unit 33 is formed by providing a plurality of plasma processing gas supply holes 46 for supplying plasma processing gas in the processing vessel 32 in a part of the upper side of the side wall 42. . The plurality of gas supply holes 46 for plasma processing are provided at equal intervals in the circumferential direction. The plasma processing gas supply unit 33 is supplied with a plasma processing gas from a reactive gas supply source (not shown).

  The support base 34 can support the substrate W to be processed thereon by an electrostatic chuck (not shown). Further, the support base 34 can be set to a desired temperature by a temperature adjustment mechanism (not shown) provided inside. The support base 34 is supported by an insulating cylindrical support portion 49 extending vertically upward from the lower side of the bottom portion 41. The exhaust hole 43 described above is provided so as to penetrate a part of the bottom 41 of the processing container 32 along the outer periphery of the cylindrical support portion 49. An exhaust device (not shown) is connected to the lower side of the annular exhaust hole 43 via an exhaust pipe (not shown). The exhaust device has a vacuum pump such as a turbo molecular pump. The inside of the processing container 32 can be depressurized to a predetermined pressure by the exhaust device.

  The plasma generation mechanism 39 is provided outside the processing vessel 32, is provided with a microwave generator 35 that generates microwaves for plasma excitation, and a plurality of slot holes 40, and above the dielectric window 36. The slot antenna plate 37 that radiates the microwaves to the dielectric window 36 and the microwave introduced by the coaxial waveguide 54 described later propagates in the radial direction. A dielectric member 38.

  A microwave generator 35 having a matching mechanism 51 is connected to an upper portion of a coaxial waveguide 54 for introducing a microwave through a mode converter 52 and a waveguide 53. For example, the TE mode microwave generated by the microwave generator 35 passes through the waveguide 53, is converted to the TEM mode by the mode converter 52, and propagates through the coaxial waveguide 54. For example, 2.45 GHz is selected as the frequency of the microwave generated by the microwave generator 35.

  The dielectric window 36 has a substantially disk shape and is made of a dielectric. Specific materials for the dielectric window 36 include quartz and alumina.

  The slot antenna plate 37 has a thin plate shape and a disk shape. As shown in FIG. 3, the plurality of slot-shaped slot holes 40 are provided so that a pair of slot holes 40 are orthogonal to each other in a substantially letter C shape, and the pair of slot holes 40 is circumferential. Are provided at predetermined intervals. Also in the radial direction, a plurality of pairs of slot holes 40 are provided at predetermined intervals.

  Microwaves generated by the microwave generator 35 are propagated through the coaxial waveguide 54 to the dielectric member 38 and radiated from the plurality of slot holes 40 provided in the slot antenna plate 37 to the dielectric window 36. Is done. The microwave transmitted through the dielectric window 36 generates an electric field immediately below the dielectric window 36 and generates plasma in the processing chamber 32. That is, the microwave plasma used for processing in the plasma processing apparatus 31 is generated by a radial line slot antenna (RLSA) including the slot antenna plate 37 and the dielectric member 38 having the above-described configuration.

  FIG. 4 is a graph showing the relationship between the distance from the lower surface 48 of the dielectric window 36 in the processing container 32 and the plasma electron temperature when plasma is generated in the plasma processing apparatus 31. FIG. 5 is a graph showing the relationship between the distance from the lower surface 48 of the dielectric window 36 in the processing container 32 and the electron density of the plasma when plasma is generated in the plasma processing apparatus 31.

Referring to FIGS. 4 and 5, the region immediately below dielectric window 36, specifically, region 26 up to approximately 10 mm indicated by the alternate long and short dash line is called a so-called plasma generation region. In this region 26, the plasma electron temperature is about 1.5 to 2.5 eV, which is relatively high, and the plasma electron density is higher than 1 × 10 ¹² cm ⁻³ . On the other hand, a region 27 exceeding 10 mm indicated by a two-dot chain line is called a plasma diffusion region. In this region 27, the plasma electron temperature is about 1.0 to 1.3 eV, at least lower than 1.5 eV, and the plasma electron density is about 1 × 10 ¹² cm ⁻³ and at least 1 × 10 ¹¹ cm ^−3. Higher than. The processing vessel 32 of the plasma processing apparatus 31 is excited by microwaves and is in such a plasma state. And the plasma processing with respect to the to-be-processed substrate W mentioned later is performed in a plasma diffusion area | region. That is, in the plasma processing step, processing using microwave plasma in the vicinity of the surface of the substrate to be processed has a plasma electron temperature lower than 1.5 eV and a plasma electron density higher than 1 × 10 ¹¹ cm ^−3. It is.

  Next, the configuration of the gas supply mechanism and the shutoff mechanism provided in the plasma processing apparatus 31 according to one embodiment of the present invention will be described. FIG. 6 is a view of a part of the head unit 62 described later as seen from the direction of the arrow III shown in FIG. 7 is a cross-sectional view showing a part of the head portion 62 shown in FIG. 6, and is an enlarged cross-sectional view of a portion indicated by VII in FIG.

  2, 6, and 7, the gas supply mechanism 61 includes a disk-shaped head portion 62 and an inner side end portion 65 that extends from the side wall 42 side of the processing vessel 32 and is an inner side portion. Includes a support portion 66 that is connected to the head portion 62 and supports the head portion 62.

  The head portion 62 is movable to a first position that covers the upper side of the support base 34 and can form a small volume region S between the head base 62 and a second position different from the first position. The small volume area S refers to a small volume area formed between the head portion 62 and the support base 34 as compared with the large volume area of the entire processing container 32. The first and second positions will be described later.

  The disc-shaped head portion 62 includes an annular extending portion 67 extending from the outer diameter side region to the lower side in the plate thickness direction. The head unit 62 is configured to be larger than the substrate W to be processed. The extension portion 67 is provided in the head portion 62 so as to be positioned on the outer diameter side of the substrate W to be processed supported on the support base 34 when viewed from the thickness direction. In this case, the above-described first position is a position where the head portion 62 covers the upper side of the support base 34. In the first position, the upper surface 47 on the outer diameter side of the support base 34 and the lower surface 63 constituting the extending portion 67 face each other.

  The head unit 62 is provided at a first position, that is, at a position facing the substrate W to be processed supported on the support table 34 when the head unit 62 is disposed on the support table 34. And a first gas supply hole 68 for supplying a purge gas. A plurality of the first gas supply holes 68 are provided so as to open a part of the surface located on the lower side of the head portion 62. The plurality of first gas supply holes 68 are provided at substantially equal intervals with predetermined intervals in the vertical and horizontal directions in FIG. The first gas supply hole 68 may be single. That is, the first gas supply hole 68 may be provided as a single unit so as to open a part of the surface located on the lower side of the head portion 62.

  Inside the head part 62 and the inside of the support part 66, one side communicates with each first gas supply hole 68 and the other side is provided outside the processing vessel 32, and supplies a film forming gas and a purge gas (see FIG. A first gas supply path 69 that leads to (not shown) is provided. The gas supply mechanism 61 supplies a film forming gas and a purge gas to the substrate W to be processed from the outside of the processing container 32 through the first gas supply path 69 and the plurality of first gas supply holes 68. . The head part 62 is made of metal in order to shield the plasma to the small volume region S. Specifically, as the material of the head portion 62, for example, aluminum in which an oxide film is formed by alumite, yttria or the like is preferably used.

  The blocking mechanism 64 that blocks the small volume region S from the space in the processing container 32 includes a gas exhaust hole 70 provided on the outer side of the substrate W to be processed supported on the support base 34 and a gas exhaust path 71 described later. And a gas exhaust mechanism for exhausting gas. The gas exhaust hole 70 has an opening in the lower surface 63 of the extending portion 67 in the head portion 62 and is provided so as to be recessed from the lower surface 63. The gas exhaust hole 70 has an annular shape. That is, it is provided along the shape of the annular extending portion 67.

  When viewed from the thickness direction, the extending portion 67 is located, and inside the peripheral edge of the head portion 62, one side leads to the gas exhaust hole 70, and the other side is provided outside the processing vessel 32, and the surplus A gas exhaust path 71 is provided which communicates with a gas exhaust section (not shown) for exhausting the film forming gas and the like. The gas exhaust mechanism exhausts excess film forming gas or the like supplied from the gas supply mechanism 61 to the outside of the processing container 32 through the gas exhaust path 71 and the annular gas exhaust hole 70.

  The shut-off mechanism 64 is provided at the periphery of the substrate W to be processed supported on the support base 34, has a second gas supply hole capable of supplying a purge gas, and supplies the purge gas from the second gas supply hole. A purge gas supply mechanism. Here, the gas exhaust hole 70 also serves as the second gas supply hole.

  Inside the peripheral edge of the head portion 62, a second gas supply is connected to a purge gas supply unit (not shown) for supplying a purge gas, with one side leading to the second gas supply hole and the other side provided outside the processing vessel 32. There is a road. Here, the gas exhaust passage 71 described above also serves as a second gas supply passage. That is, the purge gas can be supplied from the outside of the processing vessel 32 through the gas exhaust path 71 that also serves as the second gas supply path and the gas supply hole 80 that also serves as the second gas supply hole.

  The blocking mechanism 64 may include only a gas exhaust mechanism or may include only a purge gas supply mechanism.

  Further, the processing vessel 32 provided in the plasma processing apparatus 31 is formed such that a part of the side wall 42 extends outward, and is provided with a receiving portion 76 that can receive the head portion 62. The accommodating portion 76 is formed so as to extend straight from a part of the side wall 42 toward the outer side. In addition, the area | region in this accommodating part 76 becomes the 2nd position where the head part 62 in the plasma processing apparatus 31 shown in FIG. 2 can move.

As described above, the head unit 62 is movable to the first position above the support base 34 and the second position inside the storage unit 76. That is, the head unit 62 is movable in the direction of the direction or vice versa arrow A ₁ shown in FIG. In addition, the case where the head part 62 is arrange | positioned in the 1st position is shown in FIG. 2, and the case where the head part 62 is arrange | positioned in the 2nd position is shown in FIG. FIG. 8 is a schematic cross-sectional view showing a state in which the head portion 62 is accommodated in the accommodating portion 76 in the plasma processing apparatus 31 shown in FIG.

Further, the plasma processing apparatus 31 may be provided with a shielding plate 77 as a blocking mechanism that blocks a region in the storage unit 76 and a region outside the storage unit 76, here a region from the processing container 32. The shielding plate 77, along the inner wall surface 78 of the side wall 42 is movable in the direction of the direction or vice versa arrow A ₂ in Fig. FIG. 8 shows a case where the shielding plate 77 shields the area inside the accommodating portion 76 and the area outside the accommodating portion 76.

  Next, a method for manufacturing a semiconductor element including an insulating film will be described with reference to FIGS. 1 to 8, 9, 10, 11, and 12. FIG. 9 is a diagram schematically showing a sequence when gas is supplied to the substrate W to be processed in the film forming gas adsorption process using the plasma processing apparatus 31 shown in FIG. In FIG. 9, the head unit 62, the substrate W to be processed, and the support base 34 are schematically shown. FIG. 10 is a simple chart showing the flow of processing. In FIG. 10, time elapses from (A) to (H). In FIG. 10, the chart indicated by the broken line indicates the supply state or plasma generation state of each gas when positioned on the upper side, and indicates the supply stop state of each gas when positioned on the lower side. 11 and 12 are schematic cross-sectional views showing a part of the gas supply mechanism 61 and the like. FIG. 11 shows a case where only argon gas is supplied from the first gas supply hole 68. FIG. 12 shows a case where a film forming gas in which argon gas and precursor gas are mixed is supplied from the first gas supply hole 68. In FIG. 11 and FIG. 12, the connection part with the first gas supply path 69 is schematically shown from the viewpoint of easy understanding.

  Here, the configuration of the gas supply mechanism 61 shown in FIG. 11 will be briefly described. Referring to FIG. 11, gas supply mechanism 61 includes an argon gas supply system 55a and a precursor gas supply system 55b. The argon gas supply system 55a includes an MFC (Mass Flow Controller) 56a that adjusts the flow rate, a pipe 58a, and a valve 57a that supplies and stops the argon gas by opening and closing between the pipe 58a. The precursor gas supply system 55b includes an MFC 56b that adjusts the flow rate of the precursor gas, a pipe 58b, and valves 57b, 57c, 57d, and 57e that supply and stop the precursor gas by opening and closing at various points. The pipe on the downstream side of the valve 57 a and the pipe on the downstream side of the valve 57 c are shared, and are connected to a first gas supply path 69 provided in the head portion 62. About the gas supply mechanism 61 shown in FIG. 12, the code | symbol same as the code | symbol shown in FIG. 11 is attached | subjected, and the description is abbreviate | omitted. In the valves 57a to 57e, a hatched state indicates a closed state, and an open state indicates an open state.

  In addition, the temperature of the support stand 34 at the time of the plasma processing mentioned later is 100-600 degreeC, for example, Preferably, arbitrary temperature between 300-400 degreeC is selected.

  After the start of processing (FIG. 10A), that is, after the substrate to be processed W is supported by the electrostatic chuck, plasma is first generated. When plasma is generated, supply of argon gas and oxygen gas into the processing container 32 is started to generate microwave plasma. About the head part 62, supply of argon gas is started. Specifically, as shown in FIG. 11, the valve 57a is opened. Then, argon gas is supplied to the first gas supply path 69 provided in the head portion 62. Here, the region on the upper side of the substrate to be processed W is not covered with the head portion 62 but is exposed to plasma, and is on the upper surface of the substrate W to be processed which is an underlayer for processing in the initial stage. An oxidation treatment is performed (FIG. 10B).

Next, the head unit 62 is moved to the first position, that is, the upper side of the support base 34 on which the substrate W to be processed is supported (FIG. 10C). A small volume region S is formed between the support base 34 and the head portion 62. Thereafter, a purge gas is supplied from the first gas supply hole 68 toward the substrate W to be processed (FIG. 9 (K ₁ ), FIG. 10 (D)). In this case, argon gas as the purge gas has already been supplied. Further, gas is exhausted from the head portion 62. Exhaust is performed using the gas exhaust mechanism described above.

Next, a deposition gas is supplied (FIG. 9 (K ₂ ), FIG. 10 (E)). Specifically, the film forming gas containing the precursor gas is supplied so as to be ejected from the plurality of first gas supply holes 68. In this case, the argon gas is continuously supplied, and the precursor gas is supplied together. That is, as shown in FIG. 12, the valves 57b and 57c are opened while the valve 57a is opened. Then, the argon gas and the precursor gas are mixed and supplied to the first gas supply path 69 provided in the head portion 62 on the downstream side of the valve 57a and the valve 57c. In this embodiment, the film forming gas is a mixed gas of argon gas and precursor gas, and the respective flow rates are 500 sccm for argon gas and 100 sccm for precursor gas. As the precursor gas, a gas containing BTBAS (bis-tertiary-butyl-amino-silane) is used. Further, gas is exhausted from the head portion 62. This gas may be exhausted continuously.

  Here, the pressure will be described. FIG. 13 is a graph showing the relationship between the gas flow rate in the entire processing container and the arrival time until a predetermined pressure is reached. FIG. 14 is a graph showing the relationship between the gas flow rate in the small volume region S formed between the support base 34 and the head portion 62 and the arrival time until a predetermined pressure is reached. In FIG. 13 and FIG. 14, the vertical axis indicates the arrival time (seconds), and the horizontal axis indicates the gas flow rate (sccm). The gas flow rate is shown in terms of Ar (argon) gas. The graphs shown in FIGS. 13 and 14 are graphs when the pressure is increased from 1 Torr to 3 Torr. In the case shown in FIG. 13, the entire volume of the processing container 32 is about 54 liters. In the case shown in FIG. 14, the volume of the small volume region S formed between the support base 34 and the head portion 62 is about 0.75 liter. In addition, such a volume assumes the case where the diameter of the to-be-processed substrate W processed in the plasma processing apparatus 31 is 300 mm, for example.

  Referring to FIGS. 13 and 14, it can be understood that the time required to reach 3 Torr is significantly shorter in the case shown in FIG. 14 at any gas flow rate. In addition, it is preferable that the volume of the small volume area | region S formed between the support stand 34 and the head part 62 is less than 50% of the whole volume of the processing container 32, for example. Further, the volume of the small volume area S is more preferably within 20% of the entire volume of the processing container 32. Here, in the case shown in FIGS. 13 and 14 described above, the volume of the small volume region S is approximately 1.4% of the entire volume of the processing container 32.

  In this way, the deposition gas is supplied from the first gas supply hole 68 toward the substrate W to be processed. As a result, approximately one layer of precursor gas molecules is chemisorbed on the substrate W to be processed. In this case, approximately one molecular layer containing silicon atoms is formed as the chemical adsorption layer. Here, an adsorption layer of an excessively supplied physical precursor gas molecule, that is, an over-adsorption physical adsorption layer is formed on the chemical adsorption layer.

In order to perform the physical adsorption layer removal step for removing the film forming gas containing the over-adsorbed precursor gas and the gas in the small volume region S after the film forming gas is chemically adsorbed on the substrate W to be processed. The purge gas is supplied (FIG. 9 (K ₃ ), FIG. 10 (F)). When supplying the purge gas, the supply of the precursor gas is stopped and only the argon gas is supplied from the first gas supply hole 68 provided in the head portion 62. In this embodiment, argon gas is supplied as a purge gas at a flow rate of 500 sccm. Further, gas is exhausted from the head portion 62. This gas may be exhausted continuously.

Next, after supplying the purge gas, plasma treatment of the chemical adsorption layer by microwave is performed. In this embodiment, the plasma processing gas is a mixed gas of argon (Ar) gas and oxygen (O ₂ ) gas, and for each flow rate, argon gas is 500 sccm and oxygen gas is 60 sccm. . In the plasma processing, the head portion 62 is moved to the accommodating portion 76 which is the second position and accommodated (FIG. 9 (K ₄ ), FIG. 10 (G)), and then the shielding plate 77 is moved upward to accommodate the head. The inside of the part 76 and the outside of the accommodating part 76 are blocked by the shielding plate 77. Thereafter, the substrate W to be processed is placed directly below the dielectric window 36 in the processing container 32, that is, not covered by the head portion 62, and the chemicals containing silicon atoms formed on the substrate W are formed. Plasma treatment with microwaves of the adsorption layer is performed (FIG. 10H). At this time, plasma is continuously generated in the processing container 32. In this case, the plasma treatment using microwaves is an oxidation treatment of silicon atoms. This plasma treatment is performed in the plasma diffusion region described above.

  In this way, film formation is performed in which about one atomic layer is formed. This series of flows is repeated until the desired film thickness is obtained while the plasma is generated. That is, the steps from (C) to (H) in FIG. 10 are defined as one cycle, and the cycle is repeated until a desired film thickness is obtained.

  Here, with respect to the conventional plasma processing, it takes time for the plasma to be stabilized at the time of plasma generation, that is, after the plasma is ignited. However, in the plasma processing of the present embodiment, the plasma is still generated. , No time is required until the plasma stabilizes.

This will be briefly described as follows. FIG. 15 is a graph showing the time required for the plasma to stabilize, and is a graph showing changes in matching time and tuner position. In FIG. 15, the vertical axis indicates the tuner position relative to the reference position, that is, the so-called tuner position, and the horizontal axis indicates the alignment time required until the tuner position is aligned, that is, the elapsed time (seconds). Although not shown, the tuner is provided inside the matching mechanism 51 in FIG. 2 and the like described above, and the wavelength of the microwave generated by the microwave generator 35 is changed up and down. To provide a stable microwave. In FIG. 15, for a plurality of tuners, the position of the first tuner is indicated as position T ₁ and the position of the second tuner is indicated as position T ₂ . When the tuner does not move up and down and its position is stabilized, the microwave is stably supplied, that is, the plasma is stable.

Referring to FIG. 15, the positions T ₁ and T ₂ are surely stabilized after 90 seconds, and the positions T ₁ and T ₂ move violently up and down until at least about 15 seconds. I understand that. If the plasma treatment is performed before 15 seconds, the treatment is performed in an unstable plasma state. For example, active species having a high electron temperature may cause plasma damage to the substrate W to be processed. That is, the time required for plasma stabilization is at least about 15 seconds, and it is necessary to wait for plasma processing until this time elapses. If such a waiting time occurs every several tens to several hundreds of cycles, the throughput will be significantly reduced.

  Specifically, for example, in the case where a thin film is formed on a substrate to be processed having a diameter of 300 mm in the same volume as the processing container 32 described above, the gas adsorption process takes about 1 second, but the purge gas The time required for exhausting the film forming gas by supply takes about 20 seconds, the time required for plasma processing including the time required for plasma stabilization takes about 60 seconds, and the time required for exhausting the gas for plasma processing is 20 seconds. It takes a degree. Then, the cycle time for one cycle takes 101 seconds. The atomic layer is about 1 Å (angstrom). As a film thickness actually required for film formation, a film thickness of 1 nm to 500 nm is selected. For example, if a layer having a film thickness of 100 mm (= 10 nm) is to be formed, it is necessary to perform 100 cycles. Cycle × 101 seconds = 10100 seconds = 2.5 hours and more.

  However, according to the configuration of the present invention, it is possible to keep the plasma generated, so that such a waiting time, specifically, at least about 15 seconds of plasma in the case of FIG. No time is required to stabilize. Therefore, the cycle time, that is, the time required for the above-described series of flows can be greatly shortened, and the throughput can be improved.

  In this manner, a silicon oxide film is formed on the substrate W to be processed. Thereafter, etching of a desired portion is repeated on the substrate W to be processed, and a semiconductor element as shown in FIG. 1 is manufactured. Such processing is referred to as PE-ALD processing using RLSA. Such an apparatus is also referred to as a PE-ALD apparatus using RLSA.

  That is, according to such a plasma processing apparatus 31, the head portion 62 is in the first position, that is, the head portion 62 covers the upper side of the support base 34, and the space between the support base 34 and the head portion 62. In the state where the small volume region S is formed and the small volume region S is blocked from the space in the processing container 32, the film forming gas is supplied. Then, since the film forming gas is supplied in a region narrower than the space of the processing container 32, the time required for supplying the film forming gas can be shortened. Further, since the small volume region S is formed so that the head portion 62 covers the upper side of the support base 34, plasma is generated in the processing chamber 32 while the deposition gas is supplied to the substrate W to be processed. It can be generated continuously. Then, after the film formation, the head unit 62 can be moved to the second position and the plasma treatment can be performed as it is, and the time required for generating plasma can be omitted. Therefore, the time required for the plasma treatment can be shortened. Further, in this case, the small volume region S is blocked from the space in the processing container 32, and the inner wall surface of the processing container 32 is not exposed to the film forming gas even when performing the plasma processing. It is possible to suppress the adhesion of reaction products to the inner wall surface of the container 32, suppress the generation of particles, and reduce the number of cleaning steps for the inner wall surface of the processing container 32. Therefore, according to such a plasma processing apparatus 31, a throughput can be improved and a high quality film can be formed.

  Further, in this case, since the head portion 62 is accommodated in the accommodating portion 76 and is shielded by the shielding plate 77, the reaction product produced by the plasma treatment on the inner wall surface of the head portion 62 and the accommodating portion 76 at the time of the plasma treatment. Adhesion and the like can also be reduced.

  In this case, since plasma processing is performed with microwave plasma having a low electron temperature, plasma damage during film formation can be greatly reduced. Therefore, according to such a film forming method, a high quality film can be formed.

  Here, in the above-described embodiment, the housing portion is formed so as to extend straight from a part of the side wall toward the outer side. You may decide to form it so that it may extend in the diagonal direction toward the outward side from a part. Further, the volume of the accommodating portion and the size of the head portion may be substantially the same, and a shielding mechanism may be provided on the side wall of the head portion. Furthermore, the movement of the shielding plate is not limited to the vertical direction, but may be configured to be movable in the horizontal direction, the circumferential direction, and the oblique direction. Furthermore, you may make it provide the shutter-shaped thing which partitions off the space in an accommodating part, and the space in a processing container. Furthermore, it is not necessary to provide a shielding mechanism according to the application.

  In addition, you may comprise so that the temperature adjustment mechanism which can adjust the temperature of a head part and a support part is included. By doing so, it is possible to perform film formation and the like more efficiently by adjusting the temperature of the supplied gas. Specifically, for example, a heater and a sensor (both not shown) are provided inside the head portion and inside the support portion. The heater is turned on and off based on the temperature information from the sensor by the control unit provided in the plasma processing apparatus. The heater and the sensor may be provided so as to be attached to the outside of the head part or the support part. Moreover, you may comprise so that either one, ie, only a head part or a support part, may be equipped with a temperature adjustment mechanism.

  Here, the set temperature at the time of temperature adjustment is arbitrarily set depending on the precursor gas used. In the control, for example, a temperature range corresponding to the vapor pressure of the precursor gas to be used may be set. In the above-described embodiment, the gas exhaust hole that also serves as the second gas supply hole is provided so as to be annular. However, the present invention is not limited to this, and a round hole or a long hole is used. You may comprise so that it may provide in multiple circumferential directions at intervals.

  In the above-described embodiment, exhaust by the gas exhaust mechanism is continuously performed. However, the present invention is not limited to this, and exhaust by the gas exhaust mechanism may be performed at an appropriate timing in each step.

This will be described as follows. Referring to FIG. 9 again, after the head portion 62 is moved to the first position, supply of purge gas, that is, argon gas here is started in the same manner as described above (FIG. 9 (M ₁ )). At this time, exhaust by the gas exhaust mechanism is not performed at the same time. Then, at the stage where the purge gas is being supplied, that is, before the supply of the purge gas is completed, gas exhaust by the gas exhaust mechanism is started (FIG. 9 (L ₁ )). Then, the supply of the purge gas is terminated while exhausting the gas (FIG. 9 (L ₂ )). Thereafter, the gas exhaust is stopped, and then the film formation gas supply is started (FIG. 9 (L ₃ )). That is, a mixed gas of argon gas and precursor gas starts to be supplied simultaneously. Next, when the film forming gas is being supplied, the gas exhaust mechanism starts exhausting the gas (FIG. 9 (L ₄ )). Then, the supply of the film forming gas is terminated while exhausting the gas (FIG. 9 (L ₅ )). Thereafter, the exhaust of the gas is stopped again, and the supply of the purge gas is started again (FIG. 9 (L ₆ )). Then, at the stage where the purge gas is being supplied, that is, before the supply of the purge gas is completed, the gas exhaust mechanism starts exhausting the gas (FIG. 9 (L ₇ )). Then, the supply of the purge gas is terminated while exhausting the gas (FIG. 9 (L ₈ )). Finally, the head unit 62 is moved to the second position (FIG. 9 (M ₇ )), and plasma processing is performed. With this configuration, the gas replacement efficiency can be improved.

Further, the supply of the purge gas and the film forming gas and the exhaust of the gas may be performed so that the respective timings do not overlap. Referring again to FIG. 9, after moving the head portion 62 to the first position, the purge gas is supplied (FIG. 9 (M ₁ )). Here, exhaust by the gas exhaust mechanism is not performed. Thereafter, the supply of the purge gas is stopped, and the exhaust by the gas exhaust mechanism is started (FIG. 9 (M ₂ )). Next, after the exhaust by the gas exhaust mechanism is stopped, supply of the film forming gas is started (FIG. 9 (M ₃ )). After that, the supply of the film forming gas is stopped, and the exhaust by the gas exhaust mechanism is started again (FIG. 9 (M ₄ )). Next, after the exhaust by the gas exhaust mechanism is stopped again, the supply of the purge gas is started (FIG. 9 (M ₅ )). Thereafter, the supply of the purge gas is stopped again, and the exhaust by the gas exhaust mechanism is started again (FIG. 9 (M ₆ )). Thereafter, the head portion 62 is moved to the second position (FIG. 9 (M ₇ )), and plasma processing is performed. With this configuration, the gas replacement efficiency can be improved.

  In addition, you may decide to provide a focus ring in the outer peripheral side of the to-be-processed substrate supported on the support stand. FIG. 16 is an enlarged cross-sectional view showing a part of the head portion 82a and the support base 83a provided in the plasma processing apparatus 81a according to still another embodiment of the present invention in this case, and FIG. It corresponds to the cross section shown. Referring to FIG. 16, the head portion 82a is provided with a gas exhaust hole 84a also serving as a second gas supply hole and a gas exhaust path 85a also serving as a second gas supply path. On the outer peripheral side of the substrate W to be processed supported on the support base 83a, an annular and plate-shaped focus ring 88a is provided. The focus ring 88a has a predetermined plate thickness, and is provided at a position facing the gas exhaust hole 84a provided in the head portion 82a. Specifically, one surface located on the upper side of the focus ring 88a is provided so as to face the surface located on the lower side of the extending portion provided on the outer peripheral side of the head portion 82a. With this configuration, the small volume region S from the space in the processing container, that is, the head portion 82a formed at the first position is formed between the head portion 82a and the support base 83a. The efficiency of blocking the area can be increased. Such a focus ring 88a is detachably installed. Therefore, even if the reaction product generated by exposing the film forming gas to the reactive species in the plasma adheres, it can be easily replaced or changed. Therefore, maintainability can be improved. Such a focus ring 88a is also effective in improving uniformity in processing of the substrate W to be processed.

  A plurality of gas exhaust holes that also serve as the second gas supply holes may be provided. FIG. 17 is an enlarged cross-sectional view showing a part of a head part 82b and a support base 83b provided in a plasma processing apparatus 81b according to still another embodiment of the present invention in this case. It corresponds to the cross section shown.

  Referring to FIG. 17, the head portion 82b includes a first gas exhaust hole 84b, a first gas exhaust passage 85b that communicates with the first gas exhaust hole 84b, a second gas exhaust hole 86b, and a second gas. A second gas exhaust path 87b communicating with the exhaust hole 86b is provided. The first gas exhaust hole 84b is provided on the outer diameter side with respect to the second gas exhaust hole 86b. The first gas exhaust passage 85b is also provided on the outer diameter side with respect to the second gas exhaust passage 87b. With this configuration, the deposition gas can be effectively exhausted from the first gas exhaust hole 84b, and enters the small volume region S inside the head portion 62 from the second gas exhaust hole 86b. The reactive species in the plasma can be effectively exhausted. Therefore, reaction products that are unintentionally formed in each exhaust passage can be reduced. Further, the efficiency of shutting off the small volume region S can be increased by improving the gas exhaust efficiency.

  Moreover, you may make it provide a gas exhaust hole and a 2nd gas supply hole separately. FIG. 18 is an enlarged cross-sectional view showing a part of a head part 82c and a support base 83c provided in a plasma processing apparatus 81c according to still another embodiment of the present invention in this case. Corresponds to the cross section shown in FIG.

  Referring to FIG. 18, the gas exhaust mechanism 72 has a gas exhaust hole 84c provided on the outer side of the substrate W to be processed supported on the support base 83c. The gas exhaust hole 84 c has an opening in the lower surface 74 of the extending portion 73 in the head portion 82 c and is provided so as to be recessed from the lower surface 74. The gas exhaust hole 84c has an annular shape. That is, it is provided along the shape of the annular extending portion 73.

  When viewed from the plate thickness direction, the extension portion 73 is located, and inside the periphery of the head portion 82c, one side communicates with the gas exhaust hole 84c, and the other side is provided outside the processing container. A gas exhaust path 85c that leads to a gas exhaust section (not shown) for exhausting the film forming gas and the like is provided. The gas exhaust mechanism 72 exhausts the film forming gas and the like to the outside of the processing container via the gas exhaust path 85c and the annular gas exhaust hole 84c.

  A purge gas supply mechanism 75 that is included in the plasma processing apparatus 81c and supplies a purge gas is a second gas supply provided at the periphery of the head portion 82c that is the periphery of the substrate W to be processed supported on the support base 83c. A hole 86c is provided. The second gas supply hole 86 c has an opening in the lower surface 74 of the extending portion 73 in the head portion 82 c and is provided so as to be recessed from the lower surface 74. The second gas supply hole 86c has an annular shape. That is, it is provided along the shape of the annular extending portion 73.

  Inside the peripheral edge of the head portion 82c, one side communicates with the second gas supply hole 86c, the other side is provided outside the processing container, and a second gas supply communicates with a purge gas supply unit (not shown) for supplying purge gas. A path 87c is provided. Purge gas can be supplied from the outside of the processing vessel via the second gas supply path 87c and the annular second gas supply hole 86c.

  At the periphery of the head portion 82c, the second gas supply hole 86c is provided on the outer side than the gas exhaust hole 84c. That is, in the radial direction of the disk-shaped head portion 82c, the position where the gas exhaust hole 84c is provided is supported on the support base 83c rather than the position where the second gas supply hole 86c is provided. It is configured to be close to the substrate W to be processed. You may decide to comprise in this way. By doing so, the blocking efficiency of the small volume region S can be improved. Specifically, the purge gas is supplied in the portion on the outer diameter side to efficiently eliminate the plasma intrusion into the small volume region S, and the gas is supplied on the outer diameter side in the portion on the inner diameter side. Excess film forming gas including the purge gas can be efficiently exhausted to suppress the diffusion of the film forming gas and the like outside the small volume region S.

  The flow of processing in the plasma processing apparatus shown in FIG. 18 will be described. FIG. 19 is a diagram schematically showing a sequence when gas is supplied to the substrate W to be processed in the film forming gas adsorption process using the plasma processing apparatus 81c shown in FIG. 18, and corresponds to FIG. Similarly to FIG. 9, FIG. 19 schematically shows the head portion 82c, the substrate W to be processed, and the support base 83c.

  After the processing is started, that is, after the substrate to be processed W is supported by the electrostatic chuck, first, plasma is generated. When plasma is generated, supply of argon gas and oxygen gas into the processing container is started to generate microwave plasma. About the head part 82c, supply of argon gas is started. Further, the purge gas is supplied through the second gas supply hole 86c. The supply of the purge gas is continuously performed. Here, an oxidation process is performed on the upper surface of the substrate W to be processed, which is a base layer for the initial process.

Next, the head portion 82c is moved to the first position, that is, the upper side of the support base 34 on which the substrate W to be processed is supported. And the small volume area | region S is formed between the support stand 83c and the head part 82c. Thereafter, a purge gas is supplied from the first gas supply hole 79 toward the substrate to be processed W (FIG. 19 (N ₁ )). In this case, argon gas as the purge gas has already been supplied. Further, gas is exhausted from the head portion 82c. Exhaust is performed using the gas exhaust mechanism described above.

Next, a deposition gas is supplied (FIG. 19 (N ₂ )). Specifically, the film forming gas containing the precursor gas is supplied so as to be ejected from the plurality of first gas supply holes 79. In this case, the argon gas is continuously supplied, and the precursor gas is supplied together. Further, gas is exhausted from the head portion 82c. This gas is exhausted continuously.

  In this way, the deposition gas is supplied from the first gas supply hole 79 toward the substrate W to be processed. As a result, approximately one layer of precursor gas molecules is chemisorbed on the substrate W to be processed. In this case, approximately one molecular layer containing silicon atoms is formed as the chemical adsorption layer.

In order to perform the physical adsorption layer removal step for removing the film forming gas containing the over-adsorbed precursor gas and the gas in the small volume region S after the film forming gas is chemically adsorbed on the substrate W to be processed. Then, the purge gas is supplied again (FIG. 19 (N ₃ )). When supplying the purge gas, the supply of the precursor gas is stopped and only the argon gas is supplied from the first gas supply hole 79 provided in the head portion 82c. Further, gas is exhausted from the head portion 82c. This gas is exhausted continuously.

Next, after supplying the purge gas, plasma treatment of the chemical adsorption layer by microwave is performed. In the plasma processing, the head portion 82c is moved to the accommodating portion 76 which is the second position and accommodated (FIG. 19 (N ₄ )), and then the shielding plate 77 is moved upward, and the inside of the accommodating portion 76 and the accommodating portion are accommodated. The outside of 76 is shielded by a shielding plate 77. Thereafter, the substrate W to be processed is placed under the dielectric window 36 in the processing container 32, that is, not covered by the head portion 82c, and the chemicals containing silicon atoms formed on the substrate W are formed. Plasma treatment by microwave of the adsorption layer is performed. At this time, plasma is continuously generated in the processing container 32.

  In this way, film formation is performed in which about one atomic layer is formed. This series of flows is repeated until the desired film thickness is obtained while the plasma is generated. You may comprise in this way.

  In the above-described embodiment, exhaust by the gas exhaust mechanism is continuously performed. However, the present invention is not limited to this, and exhaust by the gas exhaust mechanism may be performed at an appropriate timing.

This will be described as follows. Referring to FIG. 19 again, after the head portion 82c is moved to the first position, the purge gas is continuously supplied from the first gas supply hole 79 while the purge gas is continuously supplied from the second gas supply hole 86c. That is, supply of argon gas is started here (FIG. 19 (Q ₁ )). At this time, exhaust by the gas exhaust mechanism is not performed at the same time. Then, when the purge gas is supplied from the first gas supply hole 79, that is, before the supply of the purge gas from the first gas supply hole 79 is completed, the gas exhaust mechanism starts exhausting the gas. (FIG. 19 (P ₁ )). Then, the supply of the purge gas from the first gas supply hole 79 is terminated while exhausting the gas (FIG. 19 (P ₂ )). Thereafter, the exhaust of the gas is stopped, and then the supply of the film forming gas from the first gas supply hole 79 is started (FIG. 19 (P ₃ )). That is, a mixed gas of argon gas and precursor gas starts to be supplied simultaneously. Next, at the stage where the film forming gas is being supplied, the gas exhaust mechanism starts exhausting gas (FIG. 19 (P ₄ )). Then, the supply of the film forming gas from the first gas supply hole 79 is terminated while exhausting the gas (FIG. 19 (P ₅ )). Thereafter, the gas exhaust is stopped again, and the supply of the purge gas from the first gas supply hole 79 is started again (FIG. 19 (P ₆ )). Then, when the purge gas is supplied from the first gas supply hole 79, that is, before the supply of the purge gas from the first gas supply hole 79 is completed, the gas exhaust mechanism starts exhausting the gas. (FIG. 19 (P ₇ )). Then, while the exhaust gas, and terminates the supply of the purge gas from the first gas supply holes 79 (FIG. 19 (P _8)). Finally, the head portion 62 is moved to the second position (FIG. 19 (Q ₇ )), and plasma processing is performed. With this configuration, the gas replacement efficiency can be improved.

Further, the supply of the purge gas and the film forming gas from the first gas supply hole 79 and the exhaust of the gas may be performed so that the respective timings do not overlap. Referring to FIG. 19 again, after the head portion 62 is moved to the first position, the purge gas from the first gas supply hole 79 is continuously supplied while the purge gas is continuously supplied from the second gas supply hole 86c. Is supplied (FIG. 19 (Q ₁ )). Here, exhaust by the gas exhaust mechanism is not performed. Thereafter, the supply of the purge gas from the first gas supply hole 79 is stopped, and the exhaust by the gas exhaust mechanism is started (FIG. 19 (Q ₂ )). Next, after the exhaust by the gas exhaust mechanism is stopped, the film forming gas supply from the first gas supply hole 79 is started (FIG. 19 (Q ₃ )). Thereafter, the supply of the film forming gas from the first gas supply hole 79 is stopped, and the exhaust by the gas exhaust mechanism is started again (FIG. 19 (Q ₄ )). Next, after the exhaust by the gas exhaust mechanism is stopped again, the supply of the purge gas from the first gas supply hole 79 is started (FIG. 19 (Q ₅ )). Thereafter, the supply of the purge gas from the first gas supply hole 79 is stopped again, and the exhaust by the gas exhaust mechanism is started again (FIG. 19 (Q ₆ )). Thereafter, the head portion 62 is moved to the second position (FIG. 19 (Q ₇ )), and plasma processing is performed. With this configuration, the gas replacement efficiency can be improved.

  In the above embodiment, both the gas exhaust hole and the second gas supply hole are provided in the head portion, but the present invention is not limited to this. FIG. 20 is an enlarged cross-sectional view showing a part of a head part 82d and a support base 83d provided in a plasma processing apparatus 81d according to still another embodiment of the present invention. FIG. 21 is an enlarged cross-sectional view showing a part of a head portion 82e and a support base 83e provided in a plasma processing apparatus 81e according to still another embodiment of the present invention. FIG. 22 is an enlarged cross-sectional view showing a part of a head part 82f and a support base 83f provided in a plasma processing apparatus 81f according to still another embodiment of the present invention. 20 to 22 correspond to the cross section shown in FIG.

  As in the plasma processing apparatus 81d shown in FIG. 20, the gas exhaust hole 84d and the gas exhaust path 85d are provided in the head portion 82d, and the second gas supply hole 86d and the second gas supply path 87d are supported. It is good also as a structure provided in the stand 83d. Further, like the plasma processing apparatus 81e shown in FIG. 21, the gas exhaust hole 84e and the gas exhaust path 85e are provided in the support base 83e, and the second gas supply hole 86e and the second gas supply path 87e are provided. The head portion 82e may be provided with a configuration. Further, like the plasma processing apparatus 81f shown in FIG. 22, the gas exhaust hole 84f, the gas exhaust path 85f, the second gas supply hole 86f, and the second gas supply path 87f are all provided on the support base 83f. It is good also as composition which has. When configured as shown in FIGS. 20, 21, and 22, the structure of the head portion 82d and the like can be simplified.

  The purge gas supply mechanism may be configured to supply the purge gas so as to be out of the small volume region. As a specific example in this case, when the second gas supply hole is provided, the angle formed by the gas exhaust hole and the second gas supply hole may be an acute angle. FIG. 23 is an enlarged cross-sectional view showing a part of a head part 82g and a support base 83g provided in a plasma processing apparatus 81g according to still another embodiment of the present invention in this case. It corresponds to the cross section shown.

  Referring to FIG. 23, in the plasma processing apparatus 81g, a gas exhaust hole 84g is opened toward the lower side at the periphery of the head portion 82g. The second gas supply hole 86g is provided so as to open at a predetermined angle toward the outer side, not directly downward. The angle θ referred to here is an angle formed by the inner wall surface 88g constituting the second gas supply hole 86g and the outer wall surface 89g constituting the gas exhaust hole 84g, and this angle is an acute angle. Meaning. With this configuration, the purge gas is supplied to the side opposite to the side where the substrate W to be processed is located, so that the entry of plasma or the like into the small volume region S can be suppressed more efficiently. Can do.

  Further, when providing the gas exhaust hole or the second gas supply hole in the support base, another member disposed on the outer peripheral side of the support base is provided, and the gas exhaust hole or the second gas supply is provided to the separate member. A supply hole may be provided. FIG. 24 is an enlarged cross-sectional view showing a part of the head portion 82h and the support base 83h provided in the plasma processing apparatus 81h according to still another embodiment of the present invention in this case, and FIG. It corresponds to the cross section shown.

  Referring to FIG. 24, a support base outer member 88h as a purge gas supply member which is a separate member from support base 83h is provided on the outer peripheral side of support base 83h. The support base outer member 88h is annular, and is provided such that the outer peripheral surface 89h of the support base 83h and the inner peripheral surface 90h of the support base outer member 88h are opposed to each other. Here, the head portion 82h is provided with a gas exhaust hole 84h and a gas exhaust path 85h, and the support base outer member 88h is provided with a second gas supply hole 86h and a second gas supply path 87h. It has been.

  By comprising in this way, purge gas can be supplied efficiently, using the support stand 83h of the conventional structure. Further, it is possible to supply the purge gas at a more appropriate temperature by separately controlling the temperature management in the support base 83h and the temperature management in the support base outer member 88h. In addition, it becomes easy to replace only the support base outer member 88h, change the shape, or the like.

  In this case, the support base outer member may be provided with a gas exhaust hole and a gas exhaust path, or the gas exhaust hole, the gas exhaust path, the second gas supply hole, and the second gas supply path may be provided. It may be provided. Furthermore, the support base and the support base outer member may be detachable, or a gap may be provided between the support base and the support base outer member. Furthermore, you may decide to comprise by another member about all the combinations of the member located in an up-down direction.

  In the above embodiment, the head portion moves in the processing container so as to advance and retreat in the horizontal direction, that is, in the horizontal direction. However, the present invention is not limited to this. Further, it may be configured to be movable in the vertical direction.

  FIG. 25 is a schematic sectional view showing a part of the plasma processing apparatus in this case. Referring to FIG. 25, a head portion 93 and a support portion 94 are provided in the processing container 92 of the plasma processing apparatus 91. The outer diameter side end portion 95 of the support portion 94 is attached to the inner wall surface 96 of the processing container 92. The head portion 93 and the support portion 94 are configured to be rotatable in the direction indicated by the arrow C in FIG. 25, that is, in the vertical direction, with the outer diameter side end portion 95 as the rotation center. The head portion 93 is disposed on the upper side of the support base 97 as the first position. Moreover, the head part 93 is arrange | positioned in the state rotated to the upper side from the state shown in FIG. 25 as a 2nd position.

  Regarding the film forming process, first, in the step of adsorbing gas, the head portion 93 is positioned above the support base 97. Then, during the plasma processing, the head portion 93 is rotated in the direction indicated by the arrow C in FIG. 25 together with the head portion 93 to a position inclined to the second position, here, the inner wall surface 96 side. And the plasma processing of the to-be-processed substrate W by a microwave is performed. You may decide to comprise in this way.

  Here, as shown in FIG. 26, the head portion 112 provided in the plasma processing apparatus 111 can rotate in the processing vessel 115 in the horizontal direction in the direction indicated by the arrow D, with the root portion 114 of the support portion 113 as the rotation center. It is good also as a simple structure. Further, the head unit 117 provided in the plasma processing apparatus 116 may be configured to be movable in the horizontal direction indicated by the arrow E in the processing container 119 together with the support unit 118 as shown in FIG.

  Here, the configuration of the support portion 113 may be as follows. 28, 29, and 30 are schematic cross-sectional views showing the configuration in the vicinity of the root portion 114 of the support portion 113 shown in FIG. The cross section shown in FIG. 28 corresponds to the cross section when the vicinity of the root portion 114 of the support portion 113 is cut by a plane extending in the front and back direction in FIG. 26, and the cross section shown in FIG. 29 is the cross section shown in FIG. Is equivalent to a cross-section when rotated 90 degrees, and the cross-section shown in FIG. 30 corresponds to the XXX-XXX cross-section in FIG.

  Referring to FIGS. 26 and 28 to 30, the root portion 114 of the support portion 113 is provided with a rotatable movable portion 151 and a fixed portion 152 fixed to the base 153. About the fixing | fixed part 152, the part located in the downward side is attached to the base 153 used as a base, and is being fixed. On the other hand, the movable portion 151 rotates about 90 degrees in the direction indicated by the arrow D in FIGS. 26 and 30 around the rotation center axis 154 extending in the vertical direction of the drawing as indicated by the one-dot chain line in FIGS. Can do.

Inside the support portion 113 and the base portion 114, a gas supply passage 155 leading to a gas supply hole (not shown) for supplying gas to the head portion side and a passage for a film forming gas to be exhausted are provided, and a gas exhaust hole (see FIG. And a gas exhaust passage 156 leading to (not shown). Here, the gas supply path 155 and the gas exhaust path 156 are doubled in the support portion 113 so that the gas supply path 155 is located on the inner side and the gas exhaust path 156 is located on the outer side. That is, gas is supplied in the direction indicated by arrow H ₁ in FIG. 29, the gas is exhausted in the direction indicated by the arrow H ₂ in FIG.

  With this configuration, even if the gas supplied from the gas supply path 155 leaks from a part of the gas supply path 155, the gas exhaust path 156 is provided outside, and thus leaks into the gas exhaust path 156. Gas enters and is exhausted. If it does so, the gas which leaked from the gas supply path 155 will not leak to another part. Therefore, the gas from the gas supply path 155 can be supplied to the head portion more safely and reliably.

  Of course, in the case shown in FIG. 28 described above, the gas supply paths 155 may be provided in a multiple of double or more, and the gas exhaust paths 156 may be provided in a multiple of double or more. That is, the gas supply mechanism is configured to include a support portion that extends from the side wall side, the inner side portion is connected to the head portion, and supports the head portion, and the exhaust mechanism is an exhaust gas exhausted inside the support portion. The gas supply mechanism includes an exhaust passage serving as a gas passage, the gas supply mechanism includes a gas supply passage serving as a passage of the gas to be supplied inside the support portion, and the gas supply passages are multiplexed so as to be inside the gas exhaust passage. What is necessary is just to be provided.

  In the plasma processing apparatus described above, if there are two exhaust systems, it is advantageous from the viewpoint of maintenance of the apparatus.

  This will be described as follows. FIG. 31 is a schematic sectional view showing a part of the plasma processing apparatus in this case, and corresponds to FIG. In the plasma processing apparatus 81j shown in FIG. 31, the same components as those of the plasma processing apparatus 31 shown in FIG. Referring to FIG. 31, a plasma processing apparatus 81j includes a first exhaust system 82j having an exhaust hole 43 for exhausting a gas in a space in the processing container 32, and a gas exhaust path for exhausting a gas in the small volume region S. And a second exhaust system 83j connected to. That is, the plasma processing apparatus 81j includes two independent exhaust systems, a first exhaust system 82j from the exhaust hole 43 and a second exhaust system 83j from the gas exhaust hole 70. Specifically, the dry pump 84j and the schematically illustrated pipe 85j constituting the first exhaust system 82j, and the dry pump 86j and the schematically illustrated pipe 87j constituting the second exhaust system 83j are provided separately. It is what has been. Each exhaust system 82j, 83j is connected to a detoxifying device 88j that detoxifies reaction products, film forming gas, and the like by combustion. Exhaust gas from the detoxifying device 88j is sent to an exhaust facility in a factory equipped with the plasma processing device 81j.

Next, exhaust in the case where the above processing is performed in a plasma processing apparatus having one exhaust system will be described. FIG. 32 is a diagram showing an exhaust flow in a plasma processing apparatus having one exhaust system. One exhaust system is a configuration having only an exhaust system for exhausting the space of the processing container. Referring to FIG. 32, for example, in the case where a film forming gas is supplied, the film forming gas is exhausted (R ₁ ) for exhausting from the processing container. Most of the evacuated film forming gas collects surplus film forming gas by a cold trap, that is, a mechanism in which the trap part is cooled. And it exhausts using a dry pump, burns film-forming gas with a detoxification apparatus, and detoxifies. Here, in order to prevent the deposition gas from adhering in the dry pump, heated N ₂ gas is supplied to the dry pump. Next, the supplied purge gas is exhausted, collected by a cold trap, burned and removed (R ₂ ). In the next plasma processing step, the plasma processing gas is exhausted in the exhaust system. At this time, active species generated by the plasma treatment are also collected by the cold trap and exhausted. And it is burned and detoxified (R ₃ ). Thereafter, the purge gas supplied again is exhausted, collected by a cold trap, burned, and detoxified (R ₄ ).

Thus, when there is only one exhaust system, it is necessary to collect the film forming gas using the cold trap, and it is necessary to clean the cold trap periodically. In addition, it is necessary to separately prepare a device for supplying heated N ₂ gas to the dry pump. Further, when the film forming gas remains in the piping or the dry pump, the film forming proceeds when the reactive species in the plasma touch the film forming gas. That is, a film forming reaction occurs on the inner wall of the pipe or the dry pump. If it does so, the frequency of cleaning and replacement | exchange of piping and a dry pump will become high, and maintainability will worsen.

Next, exhaust in the plasma processing apparatus having two exhaust systems shown in FIG. 31 will be described. FIG. 33 is a diagram showing an exhaust flow in the plasma processing apparatus having two exhaust systems. Referring to FIGS. 31 and 33, in the step of supplying the film forming gas, the first exhaust system 82j exhausts the atmosphere in the processing container, and the plasma processing gas is exhausted. At this time, the active species present in the processing container are also exhausted. Here, with respect to the small volume region S, the second exhaust system 83j exhausts the small volume region S, and surplus film forming gas is exhausted (S ₁ ). The gas exhausted by the exhaust systems 82j and 83j is sent to the abatement device 88j via the dry pumps 84j and 86j provided in the exhaust systems 82j and 83j. And it is burned and removed by the abatement device 88j. Next, the supplied purge gas is exhausted, burned, and detoxified (S ₂ ). Also in this case, since the atmosphere in the processing container is exhausted by the first exhaust system 82j and the purge gas is exhausted by the second exhaust system 83j, the gases are not mixed. In the next plasma processing step, in the first exhaust system 82j, the atmosphere in the processing container is exhausted and burned by the abatement apparatus 88j to be removed (S ₃ ). In the second exhaust system 83j, gas supply to the small volume region S is not performed, so that exhaust is not necessary. Thereafter, in the first exhaust system 82j, the atmosphere in the processing container is exhausted, and in the second exhaust system 83j, the supplied purge gas is exhausted and burned in the abatement device 88j, and removed. _(S 4).

By configuring in this way, the respective exhaust gases are not mixed in the exhaust system. If it does so, the film-forming gas which remained in piping and the dry pump will not react with the reactive species in plasma, and a reaction product will not be formed. Therefore, it is not necessary to provide a device for supplying heated N ₂ gas to the cold trap or the dry pump, improving the maintainability and reducing the cost.

  Further, in the plasma processing apparatus, as a configuration having two or more processing spaces in the processing container, the head portion may be configured to be able to go back and forth between two or more processing spaces.

  FIG. 34 is a schematic sectional view showing a part of the plasma processing apparatus in this case. Referring to FIG. 34, plasma processing apparatus 121 includes a first processing space 122a located on the left side in FIG. 34 and a second processing space 122b located on the right side. The first processing space 122a and the second processing space 122b are provided so as to share the side wall 123 positioned therebetween. The processing spaces 122a and 122b are respectively provided with support tables 124a and 124b, a plasma processing gas supply unit, dielectric windows 125a and 125b, and the like. Then, plasma processing can be performed on the substrate W to be processed in each of the processing spaces 122a and 122b. However, only one gas supply mechanism including the head portion 126 is provided in the plasma processing apparatus.

  Here, a part of the side wall 123 located between the first processing space 122a and the second processing space 122b is opened. Through the opening 127, the head portion 126 is configured to be movable between the first processing space 122a and the second processing space 122b. Further, on the first and second processing spaces 122a and 122b side, a first shutter 128a and a second shutter 128b that can open and close the opening 127 are provided. Specifically, the head portion 126 can move between the first processing space 122a and the second processing space 122b through the opening 127.

  According to such a configuration, an efficient film forming process can be performed. That is, for example, while the plasma processing of the substrate W to be processed is performed in the second processing space 122b on one side, the head unit 126 is moved to the first processing space 122a on the other side, so that the first In the processing space 122a, the head portion 126 performs a gas adsorption process on the substrate W to be processed. With this configuration, efficient film formation is possible. In this case, the plasma generator and the like can be shared by the processing in the two processing spaces. Of course, two or more processing containers may be provided to form two or more processing spaces.

  The plasma processing apparatus is configured to include a target substrate moving mechanism capable of at least one of supporting the target substrate on the support base and removing the target substrate supported on the support base. May be. FIG. 35 is a schematic diagram schematically showing the configuration of the plasma processing system in this case. Referring to FIG. 35, the plasma processing system 161 serves as a carry-in port for the substrate to be processed W before processing and a carry-out port for the substrate to be processed W after processing, and the substrate W to be processed between the plasma processing system 161 and the outside. Pressure between the three load ports 162a, 162b, 162c for loading and unloading, a load module 163 having a space for transporting the substrate W to be processed in an atmospheric pressure atmosphere, and the load module 163 and the transfer module 165 Two load lock modules 164a and 164b for performing adjustment, a transfer module 165 having a space for transporting the substrate W to be processed in a vacuum atmosphere, and two plasma processing apparatuses 181a for performing plasma processing on the substrate W to be processed, 181b and the transfer module 165 Comprises using the arm (not shown), the plasma processing apparatus 181a, and a target substrate transport mechanism for transporting the loading and unloading, etc. of the substrate W (not shown) between the 181b.

  Each of the support bases 167a and 167b provided in each of the plasma processing apparatuses 181a and 181b can support the four substrates to be processed W, respectively. The support areas of the four substrates W to be processed on the support base 167a are indicated by areas 168a, 168b, 168c, and 168d indicated by alternate long and short dashed lines in FIG. Further, the support areas of the four substrates to be processed W on the support base 167b are indicated by areas 168e, 168f, 168g, and 168h indicated by alternate long and short dashed lines in FIG. Here, the support bases 167a and 167b can place four substrates to be processed W. However, the support bases 167a and 167b are not limited to this, and for example, two or more substrates to be processed W may be placed. .

  FIG. 36 is a schematic perspective view schematically showing the vicinity of the support base 167a. Referring to FIG. 36, three pins (not shown) are used for supporting the substrate W to be processed on the support base 167a and removing the substrate W to be processed from the support base 167a. Support and removal of the substrate W to be processed by the pins will be described later. In FIG. 36, three pin holes 172a, 172b, and 172c, which are three pin installation regions in the region 168a of the support base 167a, are shown. Illustration of pin holes in the other regions 168b to 168d is omitted. The three pin holes 172a to 172c are provided at positions that form substantially equilateral triangles when they are connected by virtual lines. That is, the three pin holes 172a to 172c are provided in portions located at the corners of a virtual equilateral triangle.

One plasma processing apparatus 181a including the support base 167a is provided with the head portion 169 described above. The head unit 169 is attached to the support unit 170. Head portion 169, as the center of rotation of the base portion 171 made of an outer side end portion of the support portion 170 is rotatable 360 degrees in the direction indicated by the arrow J ₁ in FIG. 36. By doing so, it is possible to efficiently perform a process such as film formation on the substrate to be processed W supported by the four regions 168a to 168d. Further, the support base 167a as the rotation around the center of the base portion 171 is rotatable 360 degrees in the direction indicated by the arrow _{J 2} in Figure 36.

  By doing so, it is possible to efficiently carry in the substrate W to be processed, that is, support on the support base 167a, and carry out the substrate W to be processed, that is, removal from the support base 167a. It can be carried out. Here, the above-described rotating support base 167a and pins can be processed at least one of the support of the target substrate on the support base and the removal of the target substrate supported on the support base. Operates as a substrate moving mechanism. That is, the plasma processing apparatus has a support base as a target substrate moving mechanism capable of at least one of supporting the target substrate on the support base and removing the target substrate supported on the support base. And including pins.

  Referring to FIG. 37, the above-described head portion 173, support portion 174a, and root portion 175 are also provided for the other plasma processing apparatus 181b including the support base 167b. A placement unit 176 on which the substrate W to be processed can be placed thereon is provided at a position facing the head unit 173 by 180 degrees with the root portion 175 as the center. The placement portion 176 is supported by the support portion 174b. The support portion 174a that supports the head portion 173 and the support portion 174b that supports the mounting portion 176 are provided so as to be substantially in a straight line with the root portion 175 interposed therebetween.

  The mounting portion 176 has an L-shaped cross section and has a substantially semicircular shape when viewed from the direction of the rotation center axis. The placement unit 176 can place the substrate W to be processed on the upper surface having an L-shaped cross section. By rotation of the root portion 175, the head portion 173 and the placement portion 176 can rotate 360 degrees with the center of the root portion 175 as the center of rotation. That is, the mounting portion 176 is relatively rotatable with the predetermined portion as the root portion 175 and the predetermined portion as a reference. Then, the substrate W to be processed is supported on the support base 167b and the substrate W to be processed supported on the support base 167b is removed by the relative rotational movement of the mounting portion 176 with respect to a predetermined location. . Thus, even if the support base 167b is fixed and the support base 167b cannot rotate, the substrate W to be processed supported by the four support regions 168e to 168h can be carried in and out. it can. In FIG. 37, three pin holes 177a, 177b, and 177c, which are three pin installation regions in the region 168e of the support base 167b, are shown. Illustration of pin holes and pins in the other regions 168f to 168h is omitted. Of the support of the substrate W to be processed on the support base 167b and the removal of the substrate W to be processed supported on the support base 167b by the relative rotational movement of the mounting portion 176 with respect to a predetermined location. It is good also as a structure which performs at least any one of these.

  Here, the support and removal of the substrate W to be processed by the pins will be described as follows. 38, 39, 40, and 41 are schematic cross-sectional views showing a part of the support base 167b when the substrate W to be processed is supported and removed by the pins. First, referring to FIG. 38, the substrate W to be processed is supported in the region 168e on the support base 167b. Pins 178a and 178b and pin holes 177a and 177b are provided in the region 168e where the target substrate W is supported. The pins 178a and 178b are provided in the pin holes 177a and 177b, respectively. 38 to 41, illustration of the pin holes 177c and the pins provided in the pin holes 177c is omitted from the viewpoint of easy understanding. The pins 178a and 178b are movable in the vertical direction on the paper surface in FIG.

  Next, referring to FIG. 39, the pins 178a and 178b arranged in the pin holes 177a and 177b respectively move upward in the drawing. Then, the lower surface 179 of the substrate to be processed W is pushed by the upper ends of the pins 178a and 178b, and the substrate to be processed W moves upward. In this case, the substrate to be processed W is placed on the upper ends of the pins 178a and 178b. However, since there are a total of three pins, it becomes a so-called three-point support shape and is relatively stable. W can be placed.

  Next, with reference to FIG. 40, the mounting portion 176 rotates and moves to the position of the support region 168e. Then, the lower surface 179 of the substrate W to be processed comes to a position facing the upper surface 180 having an L-shaped cross section in the mounting portion 176. In FIG. 40, since the portion located on the outer side of the mounting portion 176 arrives earlier by rotation, the portion located on the outer side is indicated by a solid line, and the portion located on the inner side is indicated by a dotted line. Is shown.

  Next, in the state shown in FIG. 41, the pins 178a and 178b are moved downward. Then, the lower surface 179 of the substrate to be processed W is placed on the upper surface 180 of the placement unit 176. Then, the substrate W to be processed is moved out of the support region 168e by the rotation of the mounting portion 176.

  For supporting the substrate W to be processed on the support base 167b, the pin rises after the mounting portion 176 moves the substrate W to a predetermined position, for example, the region 168f, as described above. In a state where the substrate to be processed W is lifted, the mounting portion 176 is rotated to move out of the region 168f, and then the pin is lowered to be supported by the region 168f.

  By doing so, even if the support base 167b does not rotate and is fixed, the substrate W to be processed can be efficiently supported on the support base 167b and removed from the support base 167b.

  Here, the mounting portion and the pins described above can move the substrate to be processed so that at least one of the support of the substrate to be processed on the support base and the removal of the substrate to be processed supported on the support base is possible. Acts as a mechanism. In other words, the plasma processing apparatus is placed as a target substrate moving mechanism capable of at least one of supporting the target substrate on the support base and removing the target substrate supported on the support base. Includes parts and pins.

  In the above embodiment, each region has three pins and pin holes. However, the present invention is not limited to this, and four or more pins may be provided. Furthermore, it is only necessary that the pin can be placed on the upper end of the pin in a stable state, and the three pins are not necessarily provided at the position of the equilateral triangle. Further, for example, the tip of the pin may be flat, and in this case, the substrate W to be processed can be temporarily placed in a stable state even if the number of pins is one or two.

  In the above embodiment, the support base may be configured to be movable in at least one of the vertical direction and the horizontal direction. By carrying out like this, plasma processing and gas adsorption can be performed more appropriately. Specifically, for example, when the head unit is arranged at the first position, the support base is moved closer to the head unit in conjunction with the movement of the head unit.

Further, in the plasma processing apparatus described above, in order to improve the gas substituting property, argon gas, which is the same gas among the film forming gas and purge gas supplied from the head portion, is continuously supplied. Is described as follows. In the above embodiment, among the gases supplied from the head unit, the film forming gas is a mixed gas of dilution argon gas and precursor gas, and the purge gas is argon gas. That is, you may make it supply argon gas continuously. Further, the purge gas is continuously supplied even when the head portion is retracted. According to this, there is no possibility that plasma enters the gas supply hole 68 or the gas supply path 69 while the film forming gas and the purge gas are not supplied. In the above embodiment, since the gas for plasma processing is a mixed gas of argon gas and oxygen (O ₂ ) gas, even if argon gas is continuously supplied from the head portion, for example. Does not affect the plasma treatment. That is, it is preferable that at least one of the plasma processing gas, the film forming gas, and the purge gas is the same gas.

  In the above embodiment, the same gas is continuously supplied among the film forming gas and the purge gas supplied from the head unit. However, the present invention is not limited to this, and the gas is supplied at an appropriate timing. You may make it do. Further, it is not necessary to supply the purge gas when the head portion is retracted.

In the above-described embodiment, the case where silicon atoms are oxidized has been described. However, the present invention is not limited to this, and the present invention is also applicable to the case where silicon atoms are nitrided. That is, after the gas adsorption step described above, a nitride-containing gas, for example, N ₂ gas or NH ₃ gas is supplied into the processing vessel and plasma treatment is performed to form a silicon nitride film. This also applies to such a case.

In the above embodiment, a gas containing BTBAS is used as a precursor gas for gas adsorption. However, an aminosilane-based gas, dichlorosilane (DCS (Dichlorosilane): SiH ₂ CL ₂ ), hexachlorodisilane ( A gas containing halogen, such as HCD (Hexachlorodisilene): Si ₂ Cl ₆ ), or an ALD gas containing a metal element may be used. In the plasma treatment, a gas other than a gas containing oxygen atoms such as carbon monoxide can be used.

  In the above embodiment, the plasma is always generated regardless of the movement of the head portion. However, the continuous generation of plasma can be interrupted in consideration of the throughput. Even in this case, it is possible to suppress an excessive supply of the film forming gas from the small volume region S in the head portion into the processing container.

  In the above-described embodiment, the case where the trench is formed in the element isolation region and the liner film formed on the surface of the trench is formed before the trench is filled with the hole-filling insulating film has been described. For example, the present invention may be applied to formation of a gate oxide film or other insulating layer in a MOS transistor, for example, an interlayer insulating film or a gate sidewall. Of course, the present invention is also effectively applied to CCDs and LSIs. In other words, the present invention is applied to all film forming processes in which a gas adsorption process for supplying a film forming gas to form an adsorption layer and a plasma treatment process are combined.

Specific examples of the film include the following. That is, as a gate insulating film, SiO ₂ , H ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , La ₂ O ₃ , DRAM (Dynamic Random Access Memory) as a trench capacitor, SiO ₂ , HfO ₂ , Al _As gate oxide films for 3D devices such as ₂ O ₃ , Ta ₂ O ₅ , FinFET (Field Effect Transistor), etc., SiO ₂ , Al ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , La ₂ O ₃ , MEMS as (Micro Electro Mechanical Systems) _{nanolaminate, HfO 2, Ta 2 O 5} , TiO 2, Ta 2 O 5, Al 2 O 3, ZnO as a UV block layer, TiO _2, organic EL (Electro Lum for _Al 2 _{O 3} Nescence) element is an alumina insulating film, as an optical device or a solar cell or the _{like, AlTiO, SnO 2, ZnO,} ZnO and the like as a piezoelectric element.

  In the above embodiment, an exhaust process for exhausting the inside of the processing container may be performed between the gas adsorption process and the plasma processing process. Further, an exhaust process may be performed after the plasma treatment process.

  In the above embodiment, the plasma processing gas is supplied from the gas supply hole provided in the side wall. However, the present invention is not limited thereto, and the gas supply is jetted toward the center of the substrate to be processed. For example, the hole may be provided in the central region of the dielectric window and supplied from the gas supply hole.

  Further, in the above embodiment, the plasma processing is performed by the microwave by RLSA using the slot antenna plate. However, the present invention is not limited to this, and the microwave plasma processing apparatus having a comb-shaped antenna unit is used. Also good.

  In the above-described embodiment, the plasma processing apparatus uses a microwave as a plasma source. However, the present invention is not limited thereto, and is not limited to ICP (Inductively-coupled Plasma), ECR (Electron Cyclotron Resonance) plasma, or parallel plate plasma. The present invention is also applicable to a plasma processing apparatus using a plasma source as a plasma source, and is not limited to plasma generation means.

  In the above embodiment, the case where an insulating film such as a silicon oxide film is formed has been described. However, the present invention is not limited to this, and the present invention is also applicable to the case where a conductive film is formed.

  As mentioned above, although embodiment of this invention was described with reference to drawings, this invention is not limited to the thing of embodiment shown in figure. Various modifications and variations can be made to the illustrated embodiment within the same range or equivalent range as the present invention.

  11 MOS type semiconductor element, 12 silicon substrate, 13 element isolation region, 14a p type well, 14b n type well, 15a high concentration n type impurity diffusion region, 15b high concentration p type impurity diffusion region, 16a n type impurity diffusion region, 16b p-type impurity diffusion region, 17 gate oxide film, 18 gate electrode, 19 gate side wall, 21 insulating film, 22 contact hole, 23 buried electrode, 24 metal wiring layer, 26, 27, 168a, 168b, 168c, 168d, 168e, 168f, 168g, 168h region, 31, 81a, 81b, 81c, 81d, 81e, 81f, 81g, 81h, 81j, 91, 111, 116, 121, 181a, 181b plasma processing apparatus, 32, 92, 115, 119 processing vessel, 33 gas supply unit, 34, 83a, 8 3b, 83c, 83d, 83e, 83f, 83g, 83h, 97, 124a, 124b, 167a, 167b Support base, 35 microwave generator, 36, 125a, 125b Dielectric window, 37 slot antenna plate, 38 Dielectric member , 39 Plasma generating mechanism, 40 slot hole, 41 bottom, 42, 123 side wall, 43 exhaust hole, 44 lid, 45 O-ring, 46, 68, 79, 80, 86c, 86d, 86e, 86f, 86g, 86h gas Supply hole, 47, 180 upper surface, 48, 63, 74, 179 lower surface, 49 cylindrical support, 51 matching mechanism, 52 mode converter, 53 waveguide, 54 coaxial waveguide, 55a, 55b supply system, 56a , 56b MFC, 57a, 57b, 57c, 57d, 57e Valve, 58a, 58b Pipe, 61 Gas supply mechanism 62, 82a, 82b, 82c, 82d, 82e, 82f, 82g, 82h, 93, 112, 117, 169, 173 Head part, 64 shut off mechanism, 65, 95 end part, 66, 94, 113, 118, 126, 170, 174a, 174b Support part, 67, 73 Extension part, 69, 87c, 87d, 87e, 87f, 87h, 155 Gas supply path, 70, 84a, 84b, 84c, 84d, 84e, 84f, 84g, 84h, 86b gas exhaust holes, 71, 85a, 85b, 85c, 85d, 85e, 85f, 85h, 87b, 156 gas exhaust passages, 72 gas exhaust mechanisms, 75 purge gas supply mechanisms, 76 housing parts, 77 shielding plates, 78, 96 Inner wall surface, 82j, 83j Exhaust system, 84j, 86j Dry pump, 85j, 87j Piping 88a Focus ring, 88g, 89g wall surface, 88h support base outer member, 88j abatement device, 89h outer peripheral surface, 90h inner peripheral surface, 151 movable part, 152 fixed part, 153 base, 154 rotation center axis, 122a, 122b Space, 127 opening, 128a, 128b shutter, 161 plasma processing system, 162a, 162b, 162c load port, 163 load module, 164a, 164b load lock module, 165 transfer module, 171, 175 root, 172a, 172b, 172c , 177a, 177b, 177c pin hole, 176 mounting portion, 178a, 178b pin.

Claims (17)

Including a bottom portion located on the lower side and a side wall extending upward from the outer peripheral side of the bottom portion, and a processing container capable of being sealed and performing plasma processing on the substrate to be processed therein,
A support base disposed in the processing container and supporting the substrate to be processed thereon;
Plasma generating means for generating plasma in the processing vessel;
A first position that covers the upper side of the support base and can form a small volume region between the support base and a second position different from the first position, the film formation gas being A film-forming gas supply mechanism for supplying a film-forming gas, having a plate-like head portion provided so that the first gas supply hole to be supplied opens on one surface side;
A plasma processing apparatus, comprising: a blocking mechanism that blocks the small volume region from a space in the processing container when the head portion is at the first position. The plasma processing according to claim 1, wherein the shut-off mechanism includes a gas exhaust mechanism that has a gas exhaust hole provided on an outer side of the substrate to be processed supported on the support base and exhausts gas. apparatus. The shut-off mechanism is provided at the periphery of the substrate to be processed supported on the support base, has a second gas supply hole capable of supplying a purge gas, and purge gas for supplying the purge gas from the second gas supply hole The plasma processing apparatus according to claim 1, comprising a supply mechanism. The plasma processing apparatus according to claim 3, wherein the second gas supply hole is provided on an outer side of the gas exhaust hole. The plasma processing apparatus according to claim 3, wherein the purge gas supply mechanism supplies the purge gas so as to be out of the small volume region. The plasma processing apparatus according to claim 3, wherein at least one of the gas exhaust hole and the second gas supply hole is provided in a plurality in the radial direction. The gas exhaust hole is provided in the head portion,
The plasma processing apparatus according to claim 3, wherein the purge gas supply mechanism includes a purge gas supply member provided on an outer side of the support base and provided with the second gas supply hole. The plasma processing apparatus according to claim 3, wherein at least one of the gas exhaust hole and the second gas supply hole is provided in an annular shape. The gas exhaust hole is provided in the head portion,
The film forming gas supply mechanism includes a focus ring that is detachable on the support base at a position facing the gas exhaust hole on the outer side of the substrate to be processed supported on the support base. The plasma processing apparatus in any one of Claims 2-8. The film forming gas supply mechanism includes a support portion that extends from the side wall and is connected to the head portion and supports the head portion,
The gas exhaust mechanism includes a gas exhaust path that is provided inside the support portion, communicates with the gas exhaust hole, and serves as a path for exhausted gas,
The film forming gas supply mechanism includes a first gas supply path that is provided inside the support portion, communicates with the first gas supply hole, and serves as a passage for a film forming gas to be supplied.
The plasma processing apparatus according to claim 2, wherein the first gas supply path is provided in multiple so as to be inside the gas exhaust path. The processing container is formed such that a part of the side wall extends outward, and is provided with an accommodating portion capable of accommodating the head portion,
The second gas supply hole is provided in the head portion,
The gas exhaust mechanism exhausts gas when the head portion is located in the processing container,
The plasma processing apparatus according to claim 2, wherein the purge gas supply mechanism supplies the purge gas when the head unit is located in the housing unit. The plasma processing apparatus according to claim 11, wherein the second gas supply hole and the gas exhaust hole are the same hole. 2. A to-be-processed substrate moving mechanism capable of at least one of supporting the substrate to be processed on the support base and removing the substrate to be processed supported on the support base. 12. The plasma processing apparatus according to any one of 12 above. The processing substrate moving mechanism includes a mounting portion on which a processing substrate can be mounted and is relatively rotatable with reference to a predetermined location.
Of the support of the substrate to be processed on the support base and the removal of the substrate to be processed supported on the support base by the relative rotational movement of the mounting portion with respect to the predetermined location The plasma processing apparatus according to claim 13, wherein at least one of them is performed. A first exhaust system for exhausting the processing container, and a second exhaust system for exhausting the small volume region,
The plasma processing apparatus according to claim 1, wherein the first exhaust system and the second exhaust system are provided separately. The plasma generation means includes a microwave generator that generates a microwave for plasma excitation, and a dielectric window that is provided at a position facing the support base and introduces the microwave into the processing container. Item 16. The plasma processing apparatus according to any one of Items 1 to 15. 17. The plasma according to claim 16, wherein the plasma generating means includes a slot antenna plate that is provided with a plurality of slot holes, is disposed above the dielectric window, and radiates microwaves to the dielectric window. Processing equipment.

Images