US20010000141A1 - Processes and systems for purification of boron trichloride - Google Patents

Processes and systems for purification of boron trichloride Download PDF

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US20010000141A1
US20010000141A1 US09/725,965 US72596500A US2001000141A1 US 20010000141 A1 US20010000141 A1 US 20010000141A1 US 72596500 A US72596500 A US 72596500A US 2001000141 A1 US2001000141 A1 US 2001000141A1
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bcl
phosgene
inert gas
vapor stream
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Derong Zhou
Gregory Jursich
Earle Kebbekus
John Borzio
Jason Uner
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/06Boron halogen compounds
    • C01B35/061Halides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/06Boron halogen compounds
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17CVESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/03Heat exchange with the fluid
    • F17C2227/0302Heat exchange with the fluid by heating
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17CVESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2270/00Applications
    • F17C2270/05Applications for industrial use
    • F17C2270/0518Semiconductors

Definitions

  • the invention relates to processes and systems for purifying boron trichloride.
  • the invention relates to processes and systems or apparatus which remove several critical impurities of boron trichloride to produce a highly purified final product required for some of its more stringent applications.
  • Boron trichloride (also referred to herein as “BCl 3 ”) is a highly reactive compound packaged as a liquid under its own vapor pressure of 1.3 bar (130 kPa) absolute at 21° C. that has numerous diverse applications. It is used predominantly as a source of boron in a variety of manufacturing processes. For example, in the manufacturing of structural materials, boron trichloride is the precursor for chemical vapor deposition (“CVD”) of boron filaments used to reinforce high performance composite materials. BCl 3 is also used as a CVD precursor in the boron doping of optical fibers, scratch resistant coatings, and semiconductors.
  • CVD chemical vapor deposition
  • BCl 3 Some of the non-CVD applications of BCl 3 are reactive ion etching of semiconductor integrated circuits and refining of metal alloys. In metallurgical applications, it is used to remove oxides, carbides, and nitrides from molten metals. In particular, BCl 3 is used to refine aluminum and its alloys to improve tensile strength.
  • BCl 3 Two of the most stringent applications for high purity BCL 3 involve semiconductor and optical fiber manufacturing. In these industries the specified impurity levels in BCl 3 must be of the order of 1 ppm or less in order to maintain product quality. In fact, the impurities in most commercially available BCl 3 are often present at levels over two orders of magnitude beyond acceptable levels for these processes such as, for example, air, CO 2 , HCl, Cl 2 , and COCl 2 (“phosgene”). Furthermore, in these particular applications, any oxygen or oxygen containing impurities (such as phosgene) in the BCl 3 are especially detrimental to the manufacturing process due to the formation of certain oxide compounds. Another class of detrimental impurities in BCl 3 for these processes are metal containing impurities.
  • BCl 3 is produced almost entirely in the United States. As of 1995, as much as 220 metric tons has been consumed in the United States where about 30% has gone into the production of boron reinforcement filaments, the remaining split primarily among semiconductor etching, Friedel-Crafts catalysis reactions, and intermediate use in pharmaceuticals. In comparison, Japan consumes 70 metric tons which was all imported from the United States. In Japan, BCl 3 is used primarily in semiconductor etching and manufacture of crucibles for silicon ingots. Western European countries consumed only about 5 metric tons. (Chemical Economics Handbook, October, 1996.)
  • BCl 3 The source cost of BCl 3 varies considerably per pound depending upon purity grade and supplier. There is a strong incentive to purchase BCl 3 domestically at a low cost and purify the material to stringent semiconductor purity requirements of technically 1 ppm or less for the light impurities.
  • phosgene in the BCl 3 is allowed to oxidize molten metals such as mercury, copper, and titanium to form the corresponding metal chlorides and carbon monoxide.
  • molten metals such as mercury, copper, and titanium
  • carbon monoxide Although effective in removing phosgene, this approach presents problems with metal contamination, which is particularly difficult due to the volatility of metal chlorides.
  • the preferred process of removing phosgene is by thermal decomposition via a catalyst with a specified elevated temperature.
  • the phosgene decomposition on a preferably metal free carbonaceous catalyst was described by two earlier publications. However, in each of these two cases, other troublesome impurities were generated (chlorine in one case, and hydrogen chloride in the other) which require independent purification steps.
  • BCl 3 purification methods Another problem with known BCl 3 purification methods is the need to resort to vacuum generating devices or thermal heating of source material and associated handling systems to improve the rate of vapor transport through packed beds of adsorbents or catalytic materials.
  • known BCl 3 purification methods using packed beds such as the case of carbonaceous catalysts
  • material transport through such pressure drops becomes significantly hindered due to the BCl 3 liquid having only a 1.3 bar vapor pressure at ambient temperature.
  • maintaining reasonable flow rates through such devices requires some auxiliary means of promoting flow.
  • flow throughput can be advanced by either increasing upstream pressure or decreasing downstream pressure.
  • Increasing upstream pressure can be done using commonly known techniques of gravimetric feeding, mechanical pumping, or thermal heating of source material.
  • Gravimetric feeding in other words, elevating source material relative to the rest of the system
  • this approach still suffers from the intolerable feature of requiring material transport through the system as entirely liquid phase instead of vapor phase.
  • excessive contamination of BCl 3 by metallic impurities can occur from enhanced liquid phase corrosion mechanisms thereby degrading product purity with detrimental metallic impurities.
  • One known method of increasing upstream pressure with vapor condensation downstream is to heat the source material and all associated gas handling components to an isothermal temperature. The method is feasible but requires careful temperature control to assure uniform temperature throughout the system. Although feasible, this technique becomes difficult to implement in practice especially for high capacity industrial production.
  • phosgene removal is performed by the preferred thermal decomposition route in a manner in which the decomposition impurities are preferably continuously removed.
  • low temperature condensation is utilized along with secondary inert gas stream such as He, N 2 , or Ar.
  • secondary inert gas stream such as He, N 2 , or Ar.
  • the BCl 3 material is carried through the defined purification system alone with a secondary inert gas stream. The presence of such a gas stream having higher vapor pressure allows the overall system to be operated at higher pressures than that provided from BCl 3 vapor pressure alone. This is preferably performed most simply by bubbling the inert gas through the liquid BCl 3 and flowing the mixed gas stream through the system, after which the inert gas is easily separated from the purified BCl 3 product collected.
  • a first aspect of the invention is a process of producing a BCl 3 vapor stream containing an inert gas selected from the group consisting of helium, argon, krypton, neon, xenon, or mixtures of one or more of these, from a lower purity BCl 3 source, the BCl 3 /inert gas vapor stream having less than 10 ppm chlorine, less than 10 ppm phosgene, and less than 10 ppm each of light impurities including, but not limited to, nitrogen, oxygen, carbon dioxide, carbon monoxide, and hydrocarbons such as methane, and less than 10 ppm of nonvolatile metal containing species.
  • the process comprises injecting helium into a container of a lower purity BCl 3 source having phosgene impurity to produce a vapor stream comprising BCl 3 , helium, and phosgene; decomposing a major portion of the phosgene in the BCl 3 , helium, phosgene vapor stream by heating the vapor stream to a first temperature, in the presence of a first material, to decompose substantially all the phosgene to carbon monoxide and chlorine, to form a first intermediate vapor stream comprising BCl 3 , helium, carbon monoxide, and less than 10 ppm phosgene; and adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a second material, thereby producing the BCl 3 /helium vapor stream having less than less than 10 ppm chlorine, less than 10 ppm phosgene, and
  • a preferred process embodiment in accordance with this aspect of the invention is wherein the heating step comprises preheating the vapor stream comprising BCl 3 , helium, and phosgene prior to the vapor stream comprising BCl 3 , helium, phosgene contacting the first material, which promotes phosgene decomposition.
  • a particularly preferred process embodiment in accordance with this aspect of the invention is wherein the preheating comprises heat exchanging the first intermediate vapor stream with the vapor stream comprising BCl 3 , helium, and phosgene.
  • the phosgene decomposition step occurs in the presence of a catalyst, the catalyst comprising materials selected from the group consisting of carbon-based materials, alumina-based materials, silica-based matrials, and mixtures thereof.
  • a catalyst comprising materials selected from the group consisting of carbon-based materials, alumina-based materials, silica-based matrials, and mixtures thereof.
  • carbon it is selected from the group consisting of naturally occurring carbon, carbon molecular sieve, or other synthetic carbonaceous material.
  • phosgene decomposition can be implemented in the processes of the invention with other reactive elements such as boron, silicon, and various metals such as titanium or zinc, as described in U.S. Pat. Nos.
  • the inert gas functions to increase pressure of the vapor stream comprising BCl 3 , inert gas, and phosgene to a pressure substantially higher than the vapor pressure of the lower purity BCl 3 .
  • the phosgene decomposition step occurs at a temperature greater than about 200° C.
  • the adsorption of chlorine step preferably occurs at a temperature lower than about 50° C., although some chlorine will be adsorbed on the first material at a higher temperature in the phosgene decomposition step.
  • the chlorine adsorption step preferably comprises using a bed of adsorbent until loaded, removing the bed of adsorbent, heating the removed bed of adsorbent, and reinstalling the bed. More preferably, a second chlorine adsorption bed of same or different adsorbent could be utilized while the first is regenerating, in order to maintain continuity of the process. Alternatively, but less preferable, is the use of one bed of chlorine adsorbent with the appropriate valve configuration to allow isolation from the process and conduit connection to a regeneration system, be it via heated purge or vacuum induced desorption.
  • a second aspect in accordance with the invention is a process for producing an ultra-pure BCl 3 condensed phase from a vapor phase comprising impure BCl 3 .
  • the process comprises condensing a first vapor stream in a condenser, the first vapor comprising a major portion of BCl 3 and a minor portion of HCl, light impurities, and a first inert gas selected from the group consisting of helium, argon, krypton, neon, xenon, and mixtures thereof, to form a first condensed phase comprising BCl 3 and a second vapor comprising the first inert gas, BCl 3 , and light impurities; routing the second vapor stream to a secondary condenser, at a lower temperature, thus forming a gaseous stream containing HCl, light impurities, and the first inert gas and a second condensed phase comprising BCl 3 ; and routing the first condensed phase to a stripper, or using the
  • the stripping step includes the step of allowing the first condensed phase to come to room temperature, and then contacting it with helium at a pressure ranging from about 20 psig to about 30 psig [from about 240 kPa to about 440 kPa].
  • processes in accordance with this aspect wherein the stripped vapor phase is routed to the secondary condenser to recover residual BCl 3 , and processes wherein the stream containing only traces of BCl 3 from the secondary condenser is routed to a scrubber to remove residual traces of BCl 3 , along with HCl impurity and introduce a gaseous stream containing the inert gas and light impurities which are discharged to the atmosphere.
  • a third aspect of the invention is a process for producing ultra-high purity boron trichloride in condensed phase from a lower purity boron trichloride condensed phase having phosgene impurity, the process comprising injecting an inert gas, preferably helium, into a container of lower purity BCl 3 liquid having phosgene impurity to produce a vapor stream comprising BCl 3 , inert gas, and phosgene; decomposing a major portion of the phosgene in the BCl 3 , inert gas, phosgene vapor stream by heating to a first temperature to form a first intermediate vapor stream comprising BCl 3 , inert gas, carbon monoxide, chlorine and less than 10 ppm phosgene; adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a solid adsorbent material, thereby producing the BCl 3 /inert gas vapor
  • a fourth aspect of the invention is a process for increasing the condensed phase production of BCl 3 having less than about 10 ppm phosgene, less than about 10 ppm chlorine, less than about 10 ppm each of light impurities, and less than about 10 ppm HCl, the process comprising the steps of: introducing an inert gas selected from the group consisting of helium, argon, neon, xenon, krypton, and mixtures thereof into a container having condensed BCl 3 therein, the condensed BCl 3 having therein a minor portion of phosgene impurity; converting a major portion of the phosgene in the condensed BCl 3 to carbon monoxide and chlorine by increasing temperature of the condensed BCl 3 ; decreasing the temperature of the stream and removing the chlorine by adsorption and the carbon monoxide by stripping with an inert gas selected from the group consisting of helium, argon, xenon, krypton, neon
  • inventive purification process technology By use of the inventive purification process technology, all significant impurities of interest in BCl 3 for such high purity applications as semiconductor and fiber optic manufacturing are removed in the inventive processes such that a low purity boron trichloride now can be purified into an ultra-pure product with a purity of 99.9995% or higher (on a helium-free basis), or higher required for certain semiconductor and fiber optic manufacturing.
  • inventive processes and apparatus are preferably designed so as to minimize capital investment costs and to improve reliability. In addition, environmental emission is minimal, thereby reducing exhaust abatement requirements and increasing product yield.
  • inventive chemical process technology is composed of several different functional chemical processes or operating units as listed in the following:
  • Activated carbon is a particularly preferred material for the catalytic and adsorption steps, used both at high and low temperatures in such a way as to decompose phosgene and adsorb chlorine byproduct, respectively.
  • One aspect that is surprising and unexpected in the present invention is that the carbon monoxide and chlorine byproducts of phosgene decomposition can be introduced into a lower temperature carbon bed without reformation of phosgene under the process conditions presented.
  • the preferred activated carbon material was found to be fully regenerable to chlorine adsorption without degradation inactivity from BCl 3 .
  • the preferred activated carbon catalyst which decomposes phosgene has shown the function of a catalyst at the elevated temperature, and therefore, the carbon can be continuously used without addressing the concern of saturation and regeneration.
  • An ultra-dry inert gas such as helium is employed in the inventive process technology which overcomes the problem of BCl 3 's low vapor pressure, and the inert gas can drag BCl 3 vapor out of the low purity container and carry the vapor through different purification process units.
  • this process totally eliminates the requirement of heating the lower purity BCl 3 liquid in order to provide enough vapor pressure penetrating each production process unit and of maintaining an isothermal operating condition in order to avoid the vapor condensation where the recondensation is not desired.
  • the BCl 3 purification processes and systems of the present invention do not require any mechanical devices either to transfer the low purity BCl 3 into the purification system, or to transfill the final high purity product BCl 3 from the inventive system into a storage container.
  • the potential contamination on the final high purity product BCl 3 by mechanical transfer means is therefore preferably eliminated, and consequently, the inventive processes and systems also operate more dependably and reliably because no mechanical component is involved in the transfer process.
  • inventive processes and systems are able to run the vapor condensation and the liquid stripping separately, or simultaneously.
  • Each chemical process unit operation of the inventive processes is preferably connected sequentially and the impurities removal operating is preferably continuously.
  • the operating process minimizes potential air contamination and effects thereof because the entire process can be done without breaking down the system except changing the low purity and product containers.
  • the production processes of the invention are very economical due to the product recovery from the process being 99.99% or higher within the secondary condenser, and consequently, this process technology is environmentally nonintrusive because the product is almost totally recovered with remaining trace BCl 3 and HCl impurity easily removed by conventional scrubber technology.
  • FIG. 1 represents in schematic format an apparatus and process in accordance with the present invention.
  • FIG. 2 represents in schematic format the apparatus and process of FIG. 1, emphasizing certain details of the inventive apparatus.
  • a preferred system 1 of the invention includes a low purity BCl 3 source container 2 and first and second valves 6 and 8 which together form a dual valve T assembly which is sealed into source container 2 , as further described in the examples.
  • a tube 5 extends from the bottom of valve 6 into source container 2 ; an exterior port of valve 6 is connected to a valve 10 .
  • Valve 10 in turn is connected to a conduit 12 leading to a source 20 of inert gas, for example helium.
  • a second valve 14 and another conduit 16 also connect to the helium source 20 as well as a third conduit 18 which leads to conduit 22 and other parts of the apparatus.
  • a connection off conduit 24 leads to a scrubber unit, while conduit 24 itself leads to a valve 26 and conduit 28 which itself leads to a heat exchanger 27 .
  • Heat exchanger 27 represents a positive heat flow (preferably from heat exchange with flow of hot vapor exiting a reactor 30 ) into a low purity BCl 3 /helium mixture emanating from low purity BCl 3 source container 2 .
  • An electrically heated furnace surrounding the reactor supplies supplemental heat input into reactor 30 as required.
  • the low purity BCl 3 /helium mixture passes through conduit 28 and heat exchanger 27 and enters phosgene decomposition reactor 30 preferably from the bottom, although this is not necessary.
  • heat exchanger 37 can be any type of a variety of heat exchanger designs, such as shell and tube, tube and tube, cooling fins attached outside of conduit 38 , or even spiral wound heat exchangers.
  • chlorine adsorption unit 40 is plumbed through a conduit 44 and a valve 46 , a conduit 64 , and a valve 72 , into a condenser 50 .
  • a valve 34 and a conduit 42 are provided for bypassing of chlorine adsorption unit 40 if it is not needed as further explained herein.
  • a valve 48 allows for introduction of additional helium pressure flow into the system.
  • a conduit 52 , a valve 54 , and a conduit 56 may be used to take a product stream from the system of the invention.
  • a valve 58 and another conduit 62 preferably lead to the analytical systems such as FTIR and UV analyzers.
  • Condenser 50 is fitted with a dual valve T formed from valves 72 and 74 , valve 72 having a dip tube 55 extending into condenser 50 , preferably as illustrated in FIG. 1.
  • the gas in line 76 may still contain boron trichloride vapor.
  • This vapor is routed to a secondary condenser 60 through valve 82 to dip tube 65 .
  • Valves 82 and 84 form another dual valve T assembly.
  • a conduit 78 and a valve 86 form a bypass around secondary condenser 60 .
  • a valve 90 allows helium from source 20 and conduit 18 to force vapor through the scrubber.
  • FIG. 2 illustrates phosgene decomposition reactor 30 , and chlorine adsorption unit 40 .
  • Conduit 44 leading out of chlorine adsorption unit is shown in this figure to lead to a filter 63 which removes particles which may have been carried over from the phosgene decomposition reactor 30 and/or the chlorine adsorption unit 40 .
  • Filter 63 is connected to a conduit 64 , valve 72 , and dip tube 55 , and into condenser 50 .
  • Condenser 50 is vertically positioned in a vacuum jacketed top sealed container 100 , and is typically and preferably surrounded by a liquid nitrogen cooling coil 102 . Both condenser 50 and cooling coil 102 are immersed in a heat transfer medium 104 , such as an alcohol liquid bath. Liquid nitrogen enters the cooling coil through conduit 126 to exchange heat with the liquid bath and container 100 . Gaseous nitrogen or a mixture of gaseous nitrogen and liquid nitrogen exits through conduit 128 . As will be apparent to the skilled artisan, other low temperature fluids may serve this purpose as well, such as liquid argon.
  • Stripper column 120 has a source of helium, typically entering at the lower end of column 120 through a conduit 108 .
  • This helium flows up the stripper column, and exits with some trace level BCl 3 vapor and other impurities through valve 101 and conduit 103 , and leads preferably to another vacuum jacketed top sealed container 110 having therein secondary condenser 60 .
  • Secondary condenser 60 is surrounded with a liquid nitrogen cooling coil where liquid nitrogen enters through a conduit 130 and either a gaseous nitrogen, or a combination of liquid and gaseous nitrogen exits.
  • Vacuum jacketed and top sealed container 110 contains a heat transfer bath 112 and both coil 114 and secondary condenser 60 are immersed in the heat transfer fluid 112 contained in container 110 .
  • Both the vacuum jacketed and top sealed container 100 and 110 have vent systems. As depicted in FIG. 2, container 100 has a vent conduit and valve 71 and 73 leading to a scrubber, while container 110 has a vent conduit 81 and valve 83 also leading to a scrubbing unit. Stripped product is removed from stripper 120 via conduit 116 and valve 118 .
  • FIGS. 1 and 2 The operation of the various inventive apparatus depicted in FIGS. 1 and 2 are now explained in further operational detail using helium as the inert gas.
  • Helium with a pressure ranging from about 150 to about 250 psig (about 1130 to about 1820 kPa) from source 20 has been previously directed into a molecular sieve bed (not illustrated) for trace moisture removal.
  • source 20 is a supply of ultra-dry helium (simply referred to as helium hereinafter).
  • the ultra-dry helium stream is then preferably branched to one or more different processing operations with an individually specified pressure.
  • Helium from source 20 has also passed through a gas filter (not illustrated) where particles with a size of 0.003 ⁇ m or larger were removed.
  • One helium flow with a pressure ranging from about 20 to about 30 psig (about 240 to about 310 kPa), is directed via dip tube 5 into the low purity boron trichloride liquid container 2 and bubbles through the low purity BCl 3 liquid where a mixture of the helium and BCl 3 vapor is generated.
  • This mixture is carried into the phosgene decomposition reactor 30 in which an effective amount of catalyst, preferably activated carbon, is packed.
  • the phosgene as one of the impurities associated with low purity boron trichloride, is decomposed into CO and Cl 2 with the help of the catalyst at an operating temperature ranging from about 480 to about 700° F. (250 to 370° C.).
  • Reactor 30 is heated by an electric furnace surrounding the reactor. Within reactor 30 , an elevated phosgene concentration of 500 ppm or higher in the low purity BCl 3 can be reduced to less than 0.1 ppm. In a laboratory setting, the superficial residence time was about 1 second in reactor 30 . Due to the fact that the activated carbon functions as a catalyst, saturation of the activated carbon is not a concern in this technology.
  • phosgene free boron trichloride vapor mixed with the helium is decreased in temperature to between 50 to 80° F. (10 to 26° C.) by heat exchange with air.
  • the cooled gas is then directed into adsorption unit 40 where an effective amount of activated carbon is packed mainly for the purpose of chlorine removal. Since CO and Cl 2 can reform into phosgene at slightly elevated temperature, it is imperative to reduce the temperature to less than about 80° F. (26° C.) prior to directing the phosgene free BCl 3 into the second low temperature adsorbent unit 40 and maintain this low temperature in order to prevent reformation of phosgene.
  • adsorption unit 40 is preferably configured to prevent substantial temperature build-up in adsorption unit 40 .
  • the preferred catalyst, activated carbon, used in adsorption unit 40 has chlorine adsorption capacity of 20%. Adsorption capacity less than 20% is considered within the invention, but it should be at least 10% to be practical.
  • one pound (454 grams) of the preferred activated carbon can preferably retain 0.2 pound (91 grams) of chlorine.
  • the preferred activated carbon can be regenerated by heating the bed for a time sufficient to drive off the adsorbed chlorine.
  • Either the phosgene decomposition reactor 30 or chlorine adsorption unit 40 may contribute particles into the boron trichloride stream due to the fact that both are packed preferably with a granular material. Therefore, the flow stream exiting chlorine adsorber unit 40 preferably passes through a filter 63 in which particles having a size of 0.003 ⁇ m or larger will be retained.
  • Condenser 50 is preferably vertically positioned in a vacuum jacketed top sealed container 100 (more fully described in reference to FIG. 2) in which condenser 50 is surrounded by a liquid nitrogen cooling coil 102 . Both condenser 50 and cooling coil 102 are immersed in a heat transfer medium 104 such as an alcohol liquid bath.
  • a heat transfer medium 104 such as an alcohol liquid bath.
  • the alcohol liquid bath 104 is refrigerated and maintained at a designated condensation operating temperature by liquid nitrogen passing through coil 102 .
  • the helium flow exiting from condenser 50 in line 76 may still contain between 0.5 and 1.5% of boron trichloride vapor, the actual amount depending upon operating parameters typically used by skilled artisans.
  • This vapor is routed to a secondary condenser 60 through valve 82 and dip tube 65 for further boron trichloride vapor collection where the operating temperature is preferably controlled at between ⁇ 120 and ⁇ 125° F. ( ⁇ 84 and ⁇ 87° C.).
  • Secondary condenser 60 are similar to condenser 50 except for the lower operating temperature. Secondary condenser 60 is cooled by cooling coil 114 . Both coil 114 and secondary condenser 60 are immersed in a heat transfer bath 112 contained in vacuum jacketed, top sealed container 110 .
  • the BCl 3 concentration in the effluent from secondary condenser 60 through valve 84 and conduit 88 is less than 100 ppm. This effluent is directed to a scrubber through valve 92 and conduit 94 .
  • the cold liquid BCl 3 then is preferably totally transferred via line 106 into the stripper column 120 by the helium for further impurities removal.
  • the BCl 3 liquid in stripper 120 is stripped by the helium entering at conduit 108 at an operating pressure ranging from about 20 to about 30 psig (about 240 to about 310 kPa) to strip the gas impurities out of the BCl 3 liquid.
  • the stripped-out flow stream in line 103 is comprised of carbon monoxide, carbon dioxide, nitrogen, oxygen, hydrogen chloride, and other light gas impurities along with BCl 3 entrained in helium.
  • the stripped-out flow containing BCl 3 vapor is directed into secondary condenser 60 for further BCl 3 vapor recovery by opening valve 101 .
  • the effluent stream from secondary condenser 60 in conduit 94 and valve 92 is neutralized by a wet chemical scrubber (not shown) to remove trace BCl 3 vapor and other acid components such as HCl before final discharge to atmosphere.
  • stripping operation in stripper 120 is continued for a length of time depending upon the starting impurity concentration and the final product specification requirements.
  • This process can reduce the concentrations of carbon monoxide, carbon dioxide, nitrogen, and oxygen to less than 0.1 ppm in gas phase.
  • One more important accomplishment is that this process is able to reduce hydrogen chloride to 1 ppm or lower in gas phase.
  • the product is pushed out from the purification system via conduits 116 and 122 and valves 118 and 124 into a product container (not shown) by helium.
  • Stripper 120 is then ready for another stripping operation while the vapor condensation is continued in condenser 50 .
  • the BCl 3 source container 2 was an approximately 50 liter carbon steel storage vessel that was equipped with a “dual valve tee” at one end. “Dual valve tee” refers to two valves connected to a tee union whereby the base of one valve has a dip tube extending into the vessel
  • the He/BCl 3 mixture with some CO and Cl 2 passed through some intermediate 0.5 inch (1.27 cm) stainless steel tubing wrapped with thin metal heat transfer fins and a tube-in-tube heat exchanger before entering the chlorine adsorption unit 40 .
  • the fins and heat exchanger were needed for two purposes, to reduce the temperature of the He/BCl 3 /Cl 2 /CO gas stream exiting reactor 30 so valves in the system were not destroyed by the high heat, and to prevent heating of the chlorine adsorption unit 40 , which can lead to reformation of COCl 2 .
  • the unit 40 was much smaller in size than reactor 30 and was oriented horizontally. It contained approximately 0.2 lbs.
  • the BCl 3 was transferred towards two low temperature condensers 50 and 60 maintained at two differing sub-ambient temperatures.
  • Condensers 50 and 60 were equivalent in size to BCl 3 source vessel 2 . Both condensers had dual valve tees and were plumbed in series, with gas entering the inner tube of the first condenser 50 and exiting to the inner tube of the second condenser 60 .
  • the first condenser 50 was contained in a dewar 100 with a glycol solution cooled by a refrigeration unit. The temperature of the cylinder was controlled from ⁇ 11 to 40° C. During purification runs, the glycol solution was typically at about ⁇ 5° C.
  • the second condenser 60 was also contained in a dewar 110 which was packed in dry ice (about ⁇ 78° C.).
  • FTIR and UV analyzers were installed to allow sampling of gas from many points in the purification system. Sampling of source BCl 3 was done by directly connecting BCl 3 source container 2 to the FTIR/UV analytical system. Gas flow exited the analytical system directly to the scrubber (not shown).
  • the aqueous sodium hydroxide layer is typically a 3-6% by weight solution of NaOH.
  • this halocarbon-aqueous scrubber was placed just prior to the venturi inlet of the conventional acid scrubber unit. The vacuum created by the venturi was reduced in order to prevent any rapid evaporation of the NaOH solution from the two-phase unit. The use of the halocarbon-aqueous scrubber greatly reduced plugging of the conventional acid scrubber system.
  • the FTIR used was a Midac FTIR configured to operate at 2 cm ⁇ 1 resolution with a MCT detector. It had an Axiom folded path gas cell with an effective path length of 4 meters. Prior to this study, calibration of the FTIR was done for COCl 2 , HCl, and CO. TABLE 1 Peak Cell Pressure Location Peak Height Concentration Detection Impurity (psig) (cm-1) (Abs units) (ppm) Limit (ppm) COCl 2 Near ambient 851 0.422 23 ⁇ 0.1 (bal N 2 ) pressure HCl 5 3014, 2998 0.038, 0.051 50 ⁇ 0.5 (bal N 2 ) CO 5 2172 0.044 50 ⁇ 0.5 (bal N 2 )
  • the peaks analyzed were at 2998 cm ⁇ 1 and 3014 cm ⁇ 1 . These peaks were chosen since they did not interfere with the large BCl 3 peaks located within the HCl band.
  • the estimated noise level provided detection limits of approximately 0.5 ppm under these experimental conditions.
  • BCl 3 level was around 60-70%.
  • the activated carbon beds were dried down with a N 2 purge at the operating temperature of 350° C., and above, for several weeks prior to their first exposure to BCl 3 .
  • the carbon beds purged with either helium or nitrogen.
  • BCl 3 is left stagnant in the trap between purification runs. This is basically keeping the system free of outside impurities, particularly trace moisture, that will exist in the purge gas at low levels. It also minimized the loss of any BCl 3 during purification. After more than six months of operation, the same carbon was still being used in reactor 30 without any noticeable degradation in performance.
  • the source container was replaced with a larger unit containing approximately 1200 lbs. (600 kg) of BCl 3 .
  • This container was positioned horizontally offering larger liquid-vapor interface areaand in this example the inner tube of the container had a dip tube that allowed He to flow directly through the liquid BCl 3 and out a second valve of the vapor phase portion of the container into the purification train.
  • the process procedure was the same as in Example 1 except additional helium was injected into the low temperature condensers by feeding He in just after the second (low temperature) carbon bed and thus having it flow through the two condensers and out the scrubber like a normal purification run. This additional injection of helium lowered the CO and HCl impurities down to detection limits of 1 ppm or less.
  • the concentration level of metals falls within the range of that measured from a competitive high purity BCl 3 supplier even though the inventive system did not have any secondary vaporization process specifically for removing metals. Even so, typically, the level of metals (whether from samples produced by inventive system or the competitive high purity BCl 3 sample) fall around a few to tens of ppb level for most elements. Very often the most abundant impurity elements found in BCl 3 from either the inventive system or the competitive high purity BCl 3 sample are Fe, Ca, and Si. These analysis results are taken with liquid phase sampling followed by residue analysis.
  • the BCl 3 purification process and system of the present invention was a success and high purity BCl 3 required for existing semiconductor manufacturers is obtained from low purity BCl 3 .
  • the main goal of this invention was to take low purity BCl 3 with ⁇ 100 ppm of COCl 2 and produce pure product meeting today's typical semiconductor specifications.

Abstract

Processes are disclosed for increasing the condensed phase production of BCl3 comprising less than about 10 ppm phosgene, less than 10 ppm chlorine, and less than 10 ppm HCl. In one embodiment the process comprises injecting an inert gas into a container having condensed BCl3 therein, the condensed BCl3 having therein a minor portion of phosgene impurity. A major portion of the phosgene in the condensed BCl3 is decomposed to carbon monoxide and chlorine by increasing temperature to produce a phosgene deficient stream. The temperature of the phosgene deficient stream is then decreased, and contacted with an adsorbent to remove the chlorine in the stream by adsorption to form a chlorine and phosgene free condensed stream. The chlorine and phosgene free stream is stripped using an inert gas to form a BCl3 product condensed stream, and an inert gas is used to pump the BCl3 product condensed stream to a product receiver.

Description

    BACKGROUND OF THE INVENTION
  • 1. 1. Field of the Invention
  • 2. The invention relates to processes and systems for purifying boron trichloride. In particular, the invention relates to processes and systems or apparatus which remove several critical impurities of boron trichloride to produce a highly purified final product required for some of its more stringent applications.
  • 3. 2. Related Art
  • 4. Boron trichloride (also referred to herein as “BCl3”) is a highly reactive compound packaged as a liquid under its own vapor pressure of 1.3 bar (130 kPa) absolute at 21° C. that has numerous diverse applications. It is used predominantly as a source of boron in a variety of manufacturing processes. For example, in the manufacturing of structural materials, boron trichloride is the precursor for chemical vapor deposition (“CVD”) of boron filaments used to reinforce high performance composite materials. BCl3 is also used as a CVD precursor in the boron doping of optical fibers, scratch resistant coatings, and semiconductors. Some of the non-CVD applications of BCl3 are reactive ion etching of semiconductor integrated circuits and refining of metal alloys. In metallurgical applications, it is used to remove oxides, carbides, and nitrides from molten metals. In particular, BCl3 is used to refine aluminum and its alloys to improve tensile strength.
  • 5. Two of the most stringent applications for high purity BCL3 involve semiconductor and optical fiber manufacturing. In these industries the specified impurity levels in BCl3 must be of the order of 1 ppm or less in order to maintain product quality. In fact, the impurities in most commercially available BCl3 are often present at levels over two orders of magnitude beyond acceptable levels for these processes such as, for example, air, CO2, HCl, Cl2, and COCl2 (“phosgene”). Furthermore, in these particular applications, any oxygen or oxygen containing impurities (such as phosgene) in the BCl3 are especially detrimental to the manufacturing process due to the formation of certain oxide compounds. Another class of detrimental impurities in BCl3 for these processes are metal containing impurities.
  • 6. Geographically, BCl3 is produced almost entirely in the United States. As of 1995, as much as 220 metric tons has been consumed in the United States where about 30% has gone into the production of boron reinforcement filaments, the remaining split primarily among semiconductor etching, Friedel-Crafts catalysis reactions, and intermediate use in pharmaceuticals. In comparison, Japan consumes 70 metric tons which was all imported from the United States. In Japan, BCl3 is used primarily in semiconductor etching and manufacture of crucibles for silicon ingots. Western European countries consumed only about 5 metric tons. (Chemical Economics Handbook, October, 1996.)
  • 7. The source cost of BCl3 varies considerably per pound depending upon purity grade and supplier. There is a strong incentive to purchase BCl3 domestically at a low cost and purify the material to stringent semiconductor purity requirements of technically 1 ppm or less for the light impurities.
  • 8. After extensively searching the literature and patents, there appears to be no production process technology to have been described or patented regarding how to efficiently remove various impurities from boron trichloride by an integrated purification process technology comprising several different functional chemical processes which are connected sequentially and various impurities associated with boron trichloride are removed sequentially and continuously.
  • 9. The removal of some impuritites in BCl3 has been disclosed previously. In particular, most publications have focused on how to remove phosgene from boron trichloride. This is because phosgene has similar vapor pressure to BCl3 and hence becomes difficult to remove by simple distillation. The previous methods for phosgene removal from BCl3 include electrical discharge, laser pyrolysis, fractional distillation, UV photolysis, and redox chemistry.
  • 10. Although the individual methods aforementioned had indicated to be able to reduce phosgene content in boron trichloride to a certain degree, these methods do have their drawbacks. For instance, the use of electrical discharge and laser pyrolysis is difficult to implement on a larger industrial scale without extensive equipment and capital costs, and therefore, the economics are not feasible. UV photolysis lacks effectiveness for phosgene removal to very low ppm levels. Further, the similarity of physical properties of phosgene and boron trichloride makes phase separation by distillation and differential surface adsorption difficult to implement in a practical manner. It is also known to use selective chemistry to remove phosgene from BCl3. In these methods phosgene in the BCl3 is allowed to oxidize molten metals such as mercury, copper, and titanium to form the corresponding metal chlorides and carbon monoxide. Although effective in removing phosgene, this approach presents problems with metal contamination, which is particularly difficult due to the volatility of metal chlorides.
  • 11. In view of all the drawbacks aforementioned, the preferred process of removing phosgene is by thermal decomposition via a catalyst with a specified elevated temperature. For example, the phosgene decomposition on a preferably metal free carbonaceous catalyst was described by two earlier publications. However, in each of these two cases, other troublesome impurities were generated (chlorine in one case, and hydrogen chloride in the other) which require independent purification steps.
  • 12. Another problem with known BCl3 purification methods is the need to resort to vacuum generating devices or thermal heating of source material and associated handling systems to improve the rate of vapor transport through packed beds of adsorbents or catalytic materials. In known BCl3 purification methods using packed beds such as the case of carbonaceous catalysts, there are significant pressure drops associated with packed beds when high volumetric flow rates are employed and good surface contact required. For many gases, this is not a problem. But, when it comes to BCl3, material transport through such pressure drops becomes significantly hindered due to the BCl3 liquid having only a 1.3 bar vapor pressure at ambient temperature. Thus, maintaining reasonable flow rates through such devices requires some auxiliary means of promoting flow. Conventionally, flow throughput can be advanced by either increasing upstream pressure or decreasing downstream pressure. Increasing upstream pressure can be done using commonly known techniques of gravimetric feeding, mechanical pumping, or thermal heating of source material. However, in the specific case of producing high purity corrosive gases like BCl3, the reactive nature of BCl3 makes the mechanical devices undesirable requiring high maintenance and excessive costs while providing low reliability and the increased likelihood of contamination of the BCl3 by metallic impurities. Gravimetric feeding (in other words, elevating source material relative to the rest of the system) effectively promotes flow as only 2 meter height provides almost 1 bar additional upstream pressure. However, this approach still suffers from the intolerable feature of requiring material transport through the system as entirely liquid phase instead of vapor phase. As a consequence of liquid phase present in the system, excessive contamination of BCl3 by metallic impurities can occur from enhanced liquid phase corrosion mechanisms thereby degrading product purity with detrimental metallic impurities.
  • 13. One known method of increasing upstream pressure with vapor condensation downstream is to heat the source material and all associated gas handling components to an isothermal temperature. The method is feasible but requires careful temperature control to assure uniform temperature throughout the system. Although feasible, this technique becomes difficult to implement in practice especially for high capacity industrial production.
  • 14. Resorting to decreasing downstream pressure has its difficulties also. The simplest approach of mechanical pumping suffers from the same problems as in the upstream case. The use of simple low temperature condensation of BCl3 downstream prevents the problems of mechanical pumping but will lead to accumulation of metallic impurities in the final product collected hence degrading purity.
  • SUMMARY OF THE INVENTION
  • 15. In the processes of the present invention, phosgene removal is performed by the preferred thermal decomposition route in a manner in which the decomposition impurities are preferably continuously removed. In accordance with the present invention, low temperature condensation is utilized along with secondary inert gas stream such as He, N2, or Ar. In this technique, as disclosed in further detail herein below, the BCl3 material is carried through the defined purification system alone with a secondary inert gas stream. The presence of such a gas stream having higher vapor pressure allows the overall system to be operated at higher pressures than that provided from BCl3 vapor pressure alone. This is preferably performed most simply by bubbling the inert gas through the liquid BCl3 and flowing the mixed gas stream through the system, after which the inert gas is easily separated from the purified BCl3 product collected.
  • 16. A first aspect of the invention is a process of producing a BCl3 vapor stream containing an inert gas selected from the group consisting of helium, argon, krypton, neon, xenon, or mixtures of one or more of these, from a lower purity BCl3 source, the BCl3/inert gas vapor stream having less than 10 ppm chlorine, less than 10 ppm phosgene, and less than 10 ppm each of light impurities including, but not limited to, nitrogen, oxygen, carbon dioxide, carbon monoxide, and hydrocarbons such as methane, and less than 10 ppm of nonvolatile metal containing species. In one embodiment, using helium as the inert gas, the process comprises injecting helium into a container of a lower purity BCl3 source having phosgene impurity to produce a vapor stream comprising BCl3, helium, and phosgene; decomposing a major portion of the phosgene in the BCl3, helium, phosgene vapor stream by heating the vapor stream to a first temperature, in the presence of a first material, to decompose substantially all the phosgene to carbon monoxide and chlorine, to form a first intermediate vapor stream comprising BCl3, helium, carbon monoxide, and less than 10 ppm phosgene; and adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a second material, thereby producing the BCl3/helium vapor stream having less than less than 10 ppm chlorine, less than 10 ppm phosgene, and less than 10 ppm each of the light impurities. In preferred processes of the invention, the first and second materials are substantially the same.
  • 17. A preferred process embodiment in accordance with this aspect of the invention is wherein the heating step comprises preheating the vapor stream comprising BCl3, helium, and phosgene prior to the vapor stream comprising BCl3, helium, phosgene contacting the first material, which promotes phosgene decomposition.
  • 18. A particularly preferred process embodiment in accordance with this aspect of the invention is wherein the preheating comprises heat exchanging the first intermediate vapor stream with the vapor stream comprising BCl3, helium, and phosgene.
  • 19. Preferably, the phosgene decomposition step occurs in the presence of a catalyst, the catalyst comprising materials selected from the group consisting of carbon-based materials, alumina-based materials, silica-based matrials, and mixtures thereof. Preferably, if carbon is used, it is selected from the group consisting of naturally occurring carbon, carbon molecular sieve, or other synthetic carbonaceous material. Alternatively, phosgene decomposition can be implemented in the processes of the invention with other reactive elements such as boron, silicon, and various metals such as titanium or zinc, as described in U.S. Pat. Nos. 3,037,337; 3,043,665; and 3,207,581; however, such elements are not catalytic as they are consumed in the process, and are thus subject to depletion, thus they are not therefore the preferred materials for the phosgene decomposition step.
  • 20. In accordance with this aspect of the invention, the inert gas functions to increase pressure of the vapor stream comprising BCl3, inert gas, and phosgene to a pressure substantially higher than the vapor pressure of the lower purity BCl3.
  • 21. Preferably, the phosgene decomposition step occurs at a temperature greater than about 200° C., and the adsorption of chlorine step preferably occurs at a temperature lower than about 50° C., although some chlorine will be adsorbed on the first material at a higher temperature in the phosgene decomposition step.
  • 22. Furthermore, the chlorine adsorption step preferably comprises using a bed of adsorbent until loaded, removing the bed of adsorbent, heating the removed bed of adsorbent, and reinstalling the bed. More preferably, a second chlorine adsorption bed of same or different adsorbent could be utilized while the first is regenerating, in order to maintain continuity of the process. Alternatively, but less preferable, is the use of one bed of chlorine adsorbent with the appropriate valve configuration to allow isolation from the process and conduit connection to a regeneration system, be it via heated purge or vacuum induced desorption.
  • 23. A second aspect in accordance with the invention is a process for producing an ultra-pure BCl3 condensed phase from a vapor phase comprising impure BCl3. The process comprises condensing a first vapor stream in a condenser, the first vapor comprising a major portion of BCl3 and a minor portion of HCl, light impurities, and a first inert gas selected from the group consisting of helium, argon, krypton, neon, xenon, and mixtures thereof, to form a first condensed phase comprising BCl3 and a second vapor comprising the first inert gas, BCl3, and light impurities; routing the second vapor stream to a secondary condenser, at a lower temperature, thus forming a gaseous stream containing HCl, light impurities, and the first inert gas and a second condensed phase comprising BCl3; and routing the first condensed phase to a stripper, or using the condenser itself at a more optimal temperature, wherein a second inert gas (the same as or different from the first) is used to strip molecules having vapor pressure greater than BCl3 from the first condensed phase to produce a higher purity first condensed phase having less than 50 ppm hydrogen chloride, preferably less than 1 ppm hydrogen chloride, and a stripped vapor phase.
  • 24. Preferably, the stripping step includes the step of allowing the first condensed phase to come to room temperature, and then contacting it with helium at a pressure ranging from about 20 psig to about 30 psig [from about 240 kPa to about 440 kPa].
  • 25. Also, preferred are processes in accordance with this aspect wherein the stripped vapor phase is routed to the secondary condenser to recover residual BCl3, and processes wherein the stream containing only traces of BCl3 from the secondary condenser is routed to a scrubber to remove residual traces of BCl3, along with HCl impurity and introduce a gaseous stream containing the inert gas and light impurities which are discharged to the atmosphere.
  • 26. Further preferred processes in accordance with this aspect are those wherein the higher purity first condensed phase is transferred to a product container using ultra-high purity inert gas, preferably helium and without any other pumping or vacuum means.
  • 27. A third aspect of the invention is a process for producing ultra-high purity boron trichloride in condensed phase from a lower purity boron trichloride condensed phase having phosgene impurity, the process comprising injecting an inert gas, preferably helium, into a container of lower purity BCl3 liquid having phosgene impurity to produce a vapor stream comprising BCl3, inert gas, and phosgene; decomposing a major portion of the phosgene in the BCl3, inert gas, phosgene vapor stream by heating to a first temperature to form a first intermediate vapor stream comprising BCl3, inert gas, carbon monoxide, chlorine and less than 10 ppm phosgene; adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a solid adsorbent material, thereby producing the BCl3/inert gas vapor stream having less than 10 ppm phosgene and less than 10 ppm Cl2; routing said BCl3/inert gas vapor stream having less than about 10 ppm phosgene and less than 10 ppm Cl2 to a condenser; condensing a first vapor stream in the condenser, the first vapor comprising a major portion of BCl3 and a minor portion of HCl, inert gas, and light impurities to form a first condensed phase comprising BCl3 and a second vapor comprising the inert gas, residual BCl3, and light impurities; routing the second vapor stream to a secondary condenser, thus forming a gaseous stream containing only traces of (preferably less than about 10 ppm) BCl3 and a second condensed phase comprising BCl3; and routing the first condensed phase to a stripper (or using the secondary condenser itself at a more optimal temperature) wherein inert gas (preferably ultra-pure helium) is used to strip molecules having a vapor pressure greater than BCl3 from the first condensed phase to produce a higher purity first condensed phase having less than 50 ppm HCl, preferably less than 1 ppm HCl, and a stripped vapor phase.
  • 28. A fourth aspect of the invention is a process for increasing the condensed phase production of BCl3 having less than about 10 ppm phosgene, less than about 10 ppm chlorine, less than about 10 ppm each of light impurities, and less than about 10 ppm HCl, the process comprising the steps of: introducing an inert gas selected from the group consisting of helium, argon, neon, xenon, krypton, and mixtures thereof into a container having condensed BCl3 therein, the condensed BCl3 having therein a minor portion of phosgene impurity; converting a major portion of the phosgene in the condensed BCl3 to carbon monoxide and chlorine by increasing temperature of the condensed BCl3; decreasing the temperature of the stream and removing the chlorine by adsorption and the carbon monoxide by stripping with an inert gas selected from the group consisting of helium, argon, xenon, krypton, neon, and mixtures thereof (preferably helium); and using the inert gas to transfer the BCl3 product to a product container.
  • 29. In accordance with the present invention, several of the problems encountered in the prior art methods are overcome in the processes and apparatus of the present invention. By use of the inventive purification process technology, all significant impurities of interest in BCl3 for such high purity applications as semiconductor and fiber optic manufacturing are removed in the inventive processes such that a low purity boron trichloride now can be purified into an ultra-pure product with a purity of 99.9995% or higher (on a helium-free basis), or higher required for certain semiconductor and fiber optic manufacturing. The inventive processes and apparatus are preferably designed so as to minimize capital investment costs and to improve reliability. In addition, environmental emission is minimal, thereby reducing exhaust abatement requirements and increasing product yield. The inventive chemical process technology is composed of several different functional chemical processes or operating units as listed in the following:
  • 30. Injecting an inert gas, preferably helium, into a source container of lower purity BCl3 liquid and extract the vapor out the container;
  • 31. Using a functional catalyst such as activated carbon to thermally decompose phosgene at elevated temperature;
  • 32. Using an adsorbent such as activated carbon to remove remaining chlorine at 50° C. or lower;
  • 33. Condensing BCl3 vapor which has substantially phosgene and chlorine than the source BCl3;
  • 34. Using an inert gas to strip the BCl3 liquid to remove carbon monoxide, carbon dioxide, hydrogen chloride, nitrogen, oxygen and other lighter gas impurities that may be associated with lower purity BCl3 at the beginning, and/or generated during phosgene and chlorine removing processes upstream.
  • 35. Transfilling the final BCl3 product from the inventive system into the product storage container using inert gas pressure and no other pumping or vacuum means.
  • 36. It has been demonstrated that the inventive process technology is fully capable of producing an ultra-pure BCl3 product due to the following important new features.
  • 37. Activated carbon is a particularly preferred material for the catalytic and adsorption steps, used both at high and low temperatures in such a way as to decompose phosgene and adsorb chlorine byproduct, respectively. One aspect that is surprising and unexpected in the present invention is that the carbon monoxide and chlorine byproducts of phosgene decomposition can be introduced into a lower temperature carbon bed without reformation of phosgene under the process conditions presented. The preferred activated carbon material was found to be fully regenerable to chlorine adsorption without degradation inactivity from BCl3. The preferred activated carbon catalyst which decomposes phosgene has shown the function of a catalyst at the elevated temperature, and therefore, the carbon can be continuously used without addressing the concern of saturation and regeneration.
  • 38. An ultra-dry inert gas such as helium is employed in the inventive process technology which overcomes the problem of BCl3's low vapor pressure, and the inert gas can drag BCl3 vapor out of the low purity container and carry the vapor through different purification process units. As a result, this process totally eliminates the requirement of heating the lower purity BCl3 liquid in order to provide enough vapor pressure penetrating each production process unit and of maintaining an isothermal operating condition in order to avoid the vapor condensation where the recondensation is not desired.
  • 39. Further, the BCl3 purification processes and systems of the present invention do not require any mechanical devices either to transfer the low purity BCl3 into the purification system, or to transfill the final high purity product BCl3 from the inventive system into a storage container. The potential contamination on the final high purity product BCl3 by mechanical transfer means is therefore preferably eliminated, and consequently, the inventive processes and systems also operate more dependably and reliably because no mechanical component is involved in the transfer process.
  • 40. In addition, the inventive processes and systems are able to run the vapor condensation and the liquid stripping separately, or simultaneously. Each chemical process unit operation of the inventive processes is preferably connected sequentially and the impurities removal operating is preferably continuously. The operating process minimizes potential air contamination and effects thereof because the entire process can be done without breaking down the system except changing the low purity and product containers. Besides, the production processes of the invention are very economical due to the product recovery from the process being 99.99% or higher within the secondary condenser, and consequently, this process technology is environmentally nonintrusive because the product is almost totally recovered with remaining trace BCl3 and HCl impurity easily removed by conventional scrubber technology.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • 41.FIG. 1 represents in schematic format an apparatus and process in accordance with the present invention; and
  • 42.FIG. 2 represents in schematic format the apparatus and process of FIG. 1, emphasizing certain details of the inventive apparatus.
  • DESCRIPTION OF PREFERRED EMBODIMENTS
  • 43. Referring to FIG. 1, a preferred system 1 of the invention includes a low purity BCl3 source container 2 and first and second valves 6 and 8 which together form a dual valve T assembly which is sealed into source container 2, as further described in the examples. A tube 5 extends from the bottom of valve 6 into source container 2; an exterior port of valve 6 is connected to a valve 10. Valve 10 in turn is connected to a conduit 12 leading to a source 20 of inert gas, for example helium. A second valve 14 and another conduit 16 also connect to the helium source 20 as well as a third conduit 18 which leads to conduit 22 and other parts of the apparatus. A connection off conduit 24 leads to a scrubber unit, while conduit 24 itself leads to a valve 26 and conduit 28 which itself leads to a heat exchanger 27. Heat exchanger 27 represents a positive heat flow (preferably from heat exchange with flow of hot vapor exiting a reactor 30) into a low purity BCl3/helium mixture emanating from low purity BCl3 source container 2. An electrically heated furnace surrounding the reactor supplies supplemental heat input into reactor 30 as required. The low purity BCl3/helium mixture passes through conduit 28 and heat exchanger 27 and enters phosgene decomposition reactor 30 preferably from the bottom, although this is not necessary. The substantially “phosgene free” boron trichloride vapor having helium therein is directed through a conduit 32, valve 36, conduit 38, and another heat exchanger 37 which removes heat from the substantially phosgene free mixture before flowing into a chlorine adsorption unit 40, where an effective amount of an adsorbent is packed for chlorine removal. As with heat exchanger 27, heat exchanger 37 can be any type of a variety of heat exchanger designs, such as shell and tube, tube and tube, cooling fins attached outside of conduit 38, or even spiral wound heat exchangers. In any case, chlorine adsorption unit 40 is plumbed through a conduit 44 and a valve 46, a conduit 64, and a valve 72, into a condenser 50. A valve 34 and a conduit 42 are provided for bypassing of chlorine adsorption unit 40 if it is not needed as further explained herein. A valve 48 allows for introduction of additional helium pressure flow into the system. A conduit 52, a valve 54, and a conduit 56 may be used to take a product stream from the system of the invention. A valve 58 and another conduit 62 preferably lead to the analytical systems such as FTIR and UV analyzers.
  • 44. Condenser 50 is fitted with a dual valve T formed from valves 72 and 74, valve 72 having a dip tube 55 extending into condenser 50, preferably as illustrated in FIG. 1. After a substantial portion of the boron trichloride vapor is liquefied in condenser 50, the gas in line 76 may still contain boron trichloride vapor. This vapor is routed to a secondary condenser 60 through valve 82 to dip tube 65. Valves 82 and 84 form another dual valve T assembly. A conduit 78 and a valve 86 form a bypass around secondary condenser 60. Any non-condensed BCl3, in the flow exiting condenser 60, is routed to a conduit 88, a conduit 94, and a valve 92 followed by to a scrubbing unit. A valve 90 allows helium from source 20 and conduit 18 to force vapor through the scrubber.
  • 45. Referring now to FIG. 2, some details of one preferred apparatus are explained in further detail. Where numerals appear as first indicated in FIG. 1, those numerals are equivalent to those in FIG. 2. Thus, FIG. 2 illustrates phosgene decomposition reactor 30, and chlorine adsorption unit 40. Conduit 44 leading out of chlorine adsorption unit is shown in this figure to lead to a filter 63 which removes particles which may have been carried over from the phosgene decomposition reactor 30 and/or the chlorine adsorption unit 40. Filter 63 is connected to a conduit 64, valve 72, and dip tube 55, and into condenser 50. Condenser 50 is vertically positioned in a vacuum jacketed top sealed container 100, and is typically and preferably surrounded by a liquid nitrogen cooling coil 102. Both condenser 50 and cooling coil 102 are immersed in a heat transfer medium 104, such as an alcohol liquid bath. Liquid nitrogen enters the cooling coil through conduit 126 to exchange heat with the liquid bath and container 100. Gaseous nitrogen or a mixture of gaseous nitrogen and liquid nitrogen exits through conduit 128. As will be apparent to the skilled artisan, other low temperature fluids may serve this purpose as well, such as liquid argon.
  • 46. Referring again to FIG. 2, illustrated is a conduit 106, exiting from container 100, leading to a stripper column 120. Stripper column 120 has a source of helium, typically entering at the lower end of column 120 through a conduit 108. This helium flows up the stripper column, and exits with some trace level BCl3 vapor and other impurities through valve 101 and conduit 103, and leads preferably to another vacuum jacketed top sealed container 110 having therein secondary condenser 60. Secondary condenser 60 is surrounded with a liquid nitrogen cooling coil where liquid nitrogen enters through a conduit 130 and either a gaseous nitrogen, or a combination of liquid and gaseous nitrogen exits. Vacuum jacketed and top sealed container 110 contains a heat transfer bath 112 and both coil 114 and secondary condenser 60 are immersed in the heat transfer fluid 112 contained in container 110.
  • 47. Both the vacuum jacketed and top sealed container 100 and 110 have vent systems. As depicted in FIG. 2, container 100 has a vent conduit and valve 71 and 73 leading to a scrubber, while container 110 has a vent conduit 81 and valve 83 also leading to a scrubbing unit. Stripped product is removed from stripper 120 via conduit 116 and valve 118. The operation of the various inventive apparatus depicted in FIGS. 1 and 2 are now explained in further operational detail using helium as the inert gas.
  • 48. Helium with a pressure ranging from about 150 to about 250 psig (about 1130 to about 1820 kPa) from source 20 has been previously directed into a molecular sieve bed (not illustrated) for trace moisture removal. Hence source 20 is a supply of ultra-dry helium (simply referred to as helium hereinafter). The ultra-dry helium stream is then preferably branched to one or more different processing operations with an individually specified pressure. Helium from source 20 has also passed through a gas filter (not illustrated) where particles with a size of 0.003 μm or larger were removed.
  • 49. One helium flow, with a pressure ranging from about 20 to about 30 psig (about 240 to about 310 kPa), is directed via dip tube 5 into the low purity boron trichloride liquid container 2 and bubbles through the low purity BCl3 liquid where a mixture of the helium and BCl3 vapor is generated. This mixture is carried into the phosgene decomposition reactor 30 in which an effective amount of catalyst, preferably activated carbon, is packed. The phosgene, as one of the impurities associated with low purity boron trichloride, is decomposed into CO and Cl2 with the help of the catalyst at an operating temperature ranging from about 480 to about 700° F. (250 to 370° C.). Reactor 30 is heated by an electric furnace surrounding the reactor. Within reactor 30, an elevated phosgene concentration of 500 ppm or higher in the low purity BCl3 can be reduced to less than 0.1 ppm. In a laboratory setting, the superficial residence time was about 1 second in reactor 30. Due to the fact that the activated carbon functions as a catalyst, saturation of the activated carbon is not a concern in this technology.
  • 50. Then “phosgene free” boron trichloride vapor mixed with the helium is decreased in temperature to between 50 to 80° F. (10 to 26° C.) by heat exchange with air. The cooled gas is then directed into adsorption unit 40 where an effective amount of activated carbon is packed mainly for the purpose of chlorine removal. Since CO and Cl2 can reform into phosgene at slightly elevated temperature, it is imperative to reduce the temperature to less than about 80° F. (26° C.) prior to directing the phosgene free BCl3 into the second low temperature adsorbent unit 40 and maintain this low temperature in order to prevent reformation of phosgene. Further since both Cl2 adsorption and reformation of phosgene are exothermic reactions, adsorption unit 40 is preferably configured to prevent substantial temperature build-up in adsorption unit 40. By experiments, the preferred catalyst, activated carbon, used in adsorption unit 40 has chlorine adsorption capacity of 20%. Adsorption capacity less than 20% is considered within the invention, but it should be at least 10% to be practical. In other words, one pound (454 grams) of the preferred activated carbon can preferably retain 0.2 pound (91 grams) of chlorine. By this unit operation, the generated chlorine can be reduced to 1 ppm or less in the BCl3 stream. The preferred activated carbon can be regenerated by heating the bed for a time sufficient to drive off the adsorbed chlorine.
  • 51. Either the phosgene decomposition reactor 30 or chlorine adsorption unit 40 may contribute particles into the boron trichloride stream due to the fact that both are packed preferably with a granular material. Therefore, the flow stream exiting chlorine adsorber unit 40 preferably passes through a filter 63 in which particles having a size of 0.003 μm or larger will be retained.
  • 52. After the particles are removed, the stream is then passed into a condenser 50 through a dip tube 55. The temperature of condenser 50 is controlled between −80 and −100° F. (−62 and −73° C.) thus causing the majority of the boron trichloride vapor to be liquefied and stored. Condenser 50 is preferably vertically positioned in a vacuum jacketed top sealed container 100 (more fully described in reference to FIG. 2) in which condenser 50 is surrounded by a liquid nitrogen cooling coil 102. Both condenser 50 and cooling coil 102 are immersed in a heat transfer medium 104 such as an alcohol liquid bath.
  • 53. The alcohol liquid bath 104 is refrigerated and maintained at a designated condensation operating temperature by liquid nitrogen passing through coil 102. After the boron trichloride vapor is liquified in condenser 50, the helium flow exiting from condenser 50 in line 76 may still contain between 0.5 and 1.5% of boron trichloride vapor, the actual amount depending upon operating parameters typically used by skilled artisans. This vapor is routed to a secondary condenser 60 through valve 82 and dip tube 65 for further boron trichloride vapor collection where the operating temperature is preferably controlled at between −120 and −125° F. (−84 and −87° C.). The configuration and arrangement of secondary condenser 60 are similar to condenser 50 except for the lower operating temperature. Secondary condenser 60 is cooled by cooling coil 114. Both coil 114 and secondary condenser 60 are immersed in a heat transfer bath 112 contained in vacuum jacketed, top sealed container 110. The BCl3 concentration in the effluent from secondary condenser 60 through valve 84 and conduit 88 is less than 100 ppm. This effluent is directed to a scrubber through valve 92 and conduit 94. Once the BCl3 liquid level inside condenser 50 reaches the designated holding capacity, the cold liquid BCl3 then is preferably totally transferred via line 106 into the stripper column 120 by the helium for further impurities removal.
  • 54. After the BCl3 liquid in stripper 120 has warmed up to room temperature, the BCl3 liquid is stripped by the helium entering at conduit 108 at an operating pressure ranging from about 20 to about 30 psig (about 240 to about 310 kPa) to strip the gas impurities out of the BCl3 liquid. The stripped-out flow stream in line 103 is comprised of carbon monoxide, carbon dioxide, nitrogen, oxygen, hydrogen chloride, and other light gas impurities along with BCl3 entrained in helium. The stripped-out flow containing BCl3 vapor is directed into secondary condenser 60 for further BCl3 vapor recovery by opening valve 101. The effluent stream from secondary condenser 60 in conduit 94 and valve 92 is neutralized by a wet chemical scrubber (not shown) to remove trace BCl3 vapor and other acid components such as HCl before final discharge to atmosphere.
  • 55. The stripping operation in stripper 120 is continued for a length of time depending upon the starting impurity concentration and the final product specification requirements. This process can reduce the concentrations of carbon monoxide, carbon dioxide, nitrogen, and oxygen to less than 0.1 ppm in gas phase. One more important accomplishment is that this process is able to reduce hydrogen chloride to 1 ppm or lower in gas phase.
  • 56. Once the concentrations of the impurities meet the final product specifications, the product is pushed out from the purification system via conduits 116 and 122 and valves 118 and 124 into a product container (not shown) by helium. Stripper 120 is then ready for another stripping operation while the vapor condensation is continued in condenser 50.
  • EXAMPLES Example 1
  • 57. In this example, the BCl3 source container 2 was an approximately 50 liter carbon steel storage vessel that was equipped with a “dual valve tee” at one end. “Dual valve tee” refers to two valves connected to a tee union whereby the base of one valve has a dip tube extending into the vessel
  • 58. The dual valve tee design was used in order to introduce He (at a few guage pressure) into the liquid port valve 6 and withdraw resultant He and BCl3 vapor mixture from the vapor port valve 8. In this way He, in effect, bubbled directly through the liquid phase of BCl3 carrying primarily BCl3 vapor into the purification system. When using He in this manner no recondensation of BCl3 was observed inside the processing or analytical systems even though ambient temperature vapor pressure is only 1.3 bar.
  • 59. High purity He and N2 were used for inert gas purging where needed. The inlet to the exhaust scrubber system was a water venturi drawing a vacuum of about 20 inches Hg (50 cm Hg) (gauge pressure). This vacuum source was also available at various points along the purification train to allow removing of BCl3 vapor from the conduits. As a precautionary measure, the He line had a molecular sieve drier placed upstream to prevent any moisture contamination from the He source. Such moisture would react with BCl3 to form boric acid (a solid) and HCl. The drier turned out to be highly preferred because in one set of tests moisture contamination was present in some of the helium delivery lines. The resultant moisture contamination in this case lead to formation of HCl at high ppm levels; the additional HCl formation was eliminated upon installation of the drier.
  • 60. After the He/BCl3 vapor mixture left the source container 2, it entered a phosgene decomposition reactor 30, which decomposed the COCl2 impurity. This tubular reactor was arranged vertically in a clam shell furnace with flow entering the bottom of the reactor. The temperature of reactor 30 was controlled at 350° C. by means of an external electrical heater. The reactor 30 contained 8.5 lbs. (about 4.2 kg) of BPL 4×6 granular activated carbon from Calgon. The reactor had dimensions of 4 inches (10 cm) in diameter and 36 inches (about 90 cm) in length. Prior to use, the activated carbon was extensively dried by a heated N2 purge for several weeks.
  • 61. After passing through the phosgene decomposition reactor 30, the He/BCl3 mixture with some CO and Cl2 passed through some intermediate 0.5 inch (1.27 cm) stainless steel tubing wrapped with thin metal heat transfer fins and a tube-in-tube heat exchanger before entering the chlorine adsorption unit 40. The fins and heat exchanger were needed for two purposes, to reduce the temperature of the He/BCl3/Cl2/CO gas stream exiting reactor 30 so valves in the system were not destroyed by the high heat, and to prevent heating of the chlorine adsorption unit 40, which can lead to reformation of COCl2. The unit 40 was much smaller in size than reactor 30 and was oriented horizontally. It contained approximately 0.2 lbs. (0.1 kg) of the same activated carbon as reactor 30. The unit 40 was used to remove any chlorine generated and then released from reactor 30. In performing Cl2 analysis after the carbon beds 30 and 40, it was observed that initially all the Cl2 was absorbed by reactor 30 alone. Eventually, when reactor 30 became saturated with Cl2, breakthrough occurred. The released Cl2 was then removed by adsorption unit 40.
  • 62. After passing through adsorption unit 40, the BCl3 was transferred towards two low temperature condensers 50 and 60 maintained at two differing sub-ambient temperatures. Condensers 50 and 60 were equivalent in size to BCl3 source vessel 2. Both condensers had dual valve tees and were plumbed in series, with gas entering the inner tube of the first condenser 50 and exiting to the inner tube of the second condenser 60. The first condenser 50 was contained in a dewar 100 with a glycol solution cooled by a refrigeration unit. The temperature of the cylinder was controlled from −11 to 40° C. During purification runs, the glycol solution was typically at about −5° C. The second condenser 60 was also contained in a dewar 110 which was packed in dry ice (about −78° C.).
  • 63. FTIR and UV analyzers were installed to allow sampling of gas from many points in the purification system. Sampling of source BCl3 was done by directly connecting BCl3 source container 2 to the FTIR/UV analytical system. Gas flow exited the analytical system directly to the scrubber (not shown).
  • 64. Design of the scrubber proved to be a fairly daunting task because of the properties of BCl3. Its relatively low vapor pressure at room temperature (about 1.3 bar, or about 130 kPa) causes it to vaporize very slowly. This combined with the fact it forms a solid (boric acid) upon contact with moisture caused a lot of problems with clogging of the scrubber lines. The original scrubber system used for this study was a conventional wet scrubber for acid gases. The input lines had a water venturi system with a flow rate of about 4 gallons/min (about 17.6 liters/min) which recirculated from scrubber to venturi. The venturi created a vacuum of about 20 inches Hg (about 51 cm Hg). This set-up was especially effective for hydroscopic gases like HBr or HCl that readily dissolve in water. BCl3, however, forms solid boric acid on contact with water. This lead to plugging problems and the scrubber design had to be slightly modified.
  • 65. Modification of the scrubber was made in order to alleviate such problems described above, and is covered by applicant's copending Ser. No. 09/———, filed Sep., 1999, and incorporated by reference herein. In order to allow the BCl3 to dissolve in the water yet avoid contact with moisture vapor in the sampling lines, a two liquid phase system involving a halocarbon oil and sodium hydroxide solution was used. The halocarbon oil, having a density greater than water, settles on the bottom of the scrubber container. The gas stream to be treated is then directed to the bottom of the oil layer after which it bubbles up to an aqueous sodium hydroxide layer and reacts. The aqueous sodium hydroxide layer is typically a 3-6% by weight solution of NaOH. In one case experiment, this halocarbon-aqueous scrubber was placed just prior to the venturi inlet of the conventional acid scrubber unit. The vacuum created by the venturi was reduced in order to prevent any rapid evaporation of the NaOH solution from the two-phase unit. The use of the halocarbon-aqueous scrubber greatly reduced plugging of the conventional acid scrubber system.
  • 66. All of the conduits used in the purification system were made of 0.25 inch (0.635 cm) and 0.5 inch (1.27 cm) diameter 316L SS electropolished tubing while some of the FTIR sampling lines were 0.125 inch (0.317 cm) 316L SS. Actual flow rates were determined by tracking weight loss of the source container 2 and the weight increase of the collection cylinders (not shown) over time.
  • Analysis and Calibrations
  • 67. The FTIR used was a Midac FTIR configured to operate at 2 cm−1 resolution with a MCT detector. It had an Axiom folded path gas cell with an effective path length of 4 meters. Prior to this study, calibration of the FTIR was done for COCl2, HCl, and CO.
    TABLE 1
    Peak
    Cell Pressure Location Peak Height Concentration Detection
    Impurity (psig) (cm-1) (Abs units) (ppm) Limit (ppm)
    COCl2 Near ambient 851 0.422 23 ˜0.1
    (bal N2) pressure
    HCl
    5 3014, 2998 0.038, 0.051 50 ˜0.5
    (bal N2)
    CO 5 2172 0.044 50 ˜0.5
    (bal N2)
  • 68. For HCl, the peaks analyzed were at 2998 cm−1 and 3014 cm−1. These peaks were chosen since they did not interfere with the large BCl3 peaks located within the HCl band. The estimated noise level provided detection limits of approximately 0.5 ppm under these experimental conditions.
  • 69. For CO analysis, the peak at 2172 cm−1 was chosen. There is an interference with BCl3 throughout the entire CO band. However, this was not a problem for the analysis of CO since the line width of the BCl3 peak is much broader than the line width of the CO peaks. A simple sparging with He effectively reduced the CO below the detection limit of 0.5 ppm under these experimental conditions.
  • 70. For Cl2 analysis, a UV/VIS spectrometer (Ocean Optics) with a fiber-coupled one-meter gas cell was utilized. The purpose of this analysis was to make sure no Cl2 from COCl2 pyrolysis remained in the purified product. Calibration of this instrument was performed using Cl2/N2 mixtures. No Cl2 was seen in the purified product during these initial purification runs even though Cl2 was formed from the phosgene decomposition. This is believed to be due to the high adsorption efficiency of the carbon used in the set up.
  • 71. During analysis with FTIR or UV/VIS, the concentration of BCl3 in the He/BCl3 mixture varied from day to day somewhat due to resulting temperature of source BCl3. This was due to variations of both ambient temperature (changing the vapor pressure of BCl3) and the flow rate of helium (helium flow rate is not controlled only helium pressure). In order to determine the BCl3 concentration when helium was present, a weak BCl3 band at 2139 cm−1 was measured. By monitoring this peak and comparing to that from 100% BCl3, a determination of the BCl3 concentration was estimated. Typically, BCl3 level was around 60-70%.
  • Preparation of System
  • 72. The activated carbon beds were dried down with a N2 purge at the operating temperature of 350° C., and above, for several weeks prior to their first exposure to BCl3. At no time during the pilot scale trials were the carbon beds purged with either helium or nitrogen. BCl3 is left stagnant in the trap between purification runs. This is basically keeping the system free of outside impurities, particularly trace moisture, that will exist in the purge gas at low levels. It also minimized the loss of any BCl3 during purification. After more than six months of operation, the same carbon was still being used in reactor 30 without any noticeable degradation in performance.
  • Example 2
  • 73. In this case, the source container was replaced with a larger unit containing approximately 1200 lbs. (600 kg) of BCl3. This container was positioned horizontally offering larger liquid-vapor interface areaand in this example the inner tube of the container had a dip tube that allowed He to flow directly through the liquid BCl3 and out a second valve of the vapor phase portion of the container into the purification train. In this modification of the system, the process procedure was the same as in Example 1 except additional helium was injected into the low temperature condensers by feeding He in just after the second (low temperature) carbon bed and thus having it flow through the two condensers and out the scrubber like a normal purification run. This additional injection of helium lowered the CO and HCl impurities down to detection limits of 1 ppm or less.
  • 74. Subsequent gas chromatography analysis indicated no light impurities were present in the purified BCl3 above a detection limit of 100 ppb from current or previous purification work.
  • 75. Based on the current limited sampling results available today, the concentration level of metals falls within the range of that measured from a competitive high purity BCl3 supplier even though the inventive system did not have any secondary vaporization process specifically for removing metals. Even so, typically, the level of metals (whether from samples produced by inventive system or the competitive high purity BCl3 sample) fall around a few to tens of ppb level for most elements. Very often the most abundant impurity elements found in BCl3 from either the inventive system or the competitive high purity BCl3 sample are Fe, Ca, and Si. These analysis results are taken with liquid phase sampling followed by residue analysis.
  • 76. Overall, the BCl3 purification process and system of the present invention was a success and high purity BCl3 required for existing semiconductor manufacturers is obtained from low purity BCl3. The main goal of this invention was to take low purity BCl3 with ˜100 ppm of COCl2 and produce pure product meeting today's typical semiconductor specifications.
  • 77. While reference has been made to specific embodiments, these are only meant to be illustrative and those possessed of ordinary skill in the art may alter such embodiments without departing from the scope of the appended claims.

Claims (20)

What is claimed is:
1. A process of producing a BCl3/inert gas vapor stream from a low purity BCl3 source, the BCl3/inert gas vapor stream having less than 10 ppm chlorine and less than 10 ppm phosgene impurities, the process comprising:
a) injecting an inert gas into a container comprising low purity BCl3 having phosgene impurity to produce a vapor stream comprising BCl3, inert gas, and phosgene;
b) decomposing a major portion of the phosgene in the vapor stream comprising BCl3, inert gas, and phosgene by heating to a first temperature to form a first intermediate vapor stream comprising BCl3, inert gas, carbon monoxide, chlorine and less than 10 ppm phosgene; and
c) adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a solid adsorbent material, thereby producing said BCl3, inert gas vapor stream having less than 10 ppm chlorine and 10 ppm phosgene.
2. A process in accordance with
claim 1
wherein said heating step comprises preheating the vapor stream comprising BCl3, inert gas, and phosgene prior to the vapor stream comprising BCl3, inert gas, and phosgene contacting a catalytic material.
3. A process in accordance with
claim 2
wherein said preheating comprises heat exchanging said first intermediate vapor stream with said vapor stream comprising BCl3, inert gas, and phosgene.
4. A process in accordance with
claim 1
wherein said phosgene decomposition step occurs in the presence of a catalyst.
5. A process in accordance with
claim 4
wherein said catalyst is selected from the group consisting of carbon-based material, alumina-based material, silica-based material, or mixtures thereof.
6. A process in accordance with
claim 5
wherein said carbon-based material is selected from the group consisting of naturally occurring carbon, carbon molecular sieve, synthetic carboneous material which is not molecular sieve, and combinations thereof.
7. A process in accordance with
claim 1
wherein said inert gas increases pressure of the vapor stream comprising BCl3, inert gas, and phosgene to a pressure substantially higher than a vapor pressure of the low purity BCl3.
8. A process in accordance with
claim 1
wherein the phosgene decomposition occurs at a temperature greater than about 200° C., and the adsorption of the chlorine occurs at a temperature lower than about 30° C.
9. A process in accordance with
claim 1
wherein said adsorption step comprises using a bed of adsorbent until loaded, isolating the unit from the first intermediate vapor stream, heating the isolated unit for a time and at a temperature effective to desorb substantially all chlorine, and reusing the unit.
10. A process in accordance with
claim 1
wherein said adsorbent is selected from the group consisting of carbon-based material, alumina-based material, silica-based material, and mixtures thereof.
11. A process in accordance with
claim 10
wherein said carbon-based material is selected from the group consisting of naturally occurring carbon, carbon molecular sieve, synthetic carboneous material which is not molecular sieve, and combinations thereof.
12. A process in accordance with
claim 1
wherein the catalyst and the adsorbent each comprise carbonaceous material.
13. A process for producing an ultra pure BCl3 condensed phase from a vapor phase comprising BCl3, the process comprising:
a) condensing a first vapor stream in a condenser, the first vapor stream comprising a major portion of BCl3 and a minor portion of HCl and an inert gas to form a first condensed phase comprising BCl3, and a second vapor stream comprising the inert gas, BCl3, and light impurities;
b) routing the second vapor stream to a secondary condenser, thus forming a gaseous stream containing only trace amounts of BCl3 and a second condensed phase comprising BCl3; and
c) routing the first condensed phase to a stripper wherein an inert gas is used to strip molecules having specific gravity less than BCl3 from the first condensed phase to produce a third condensed phase having less than 50 ppm hydrogen chloride, and a stripped vapor phase.
14. A process in accordance with
claim 13
wherein step (c) includes the step of allowing the first condensed phase to come to room temperature, and then contacting the first condensed phase with inert gas at a pressure ranging from about 20 psig to about 30 psig (from about 240 kPa to about 440 kPa).
15. A process in accordance with
claim 13
wherein the stripped vapor phase is routed to the secondary condenser to recover residual BCl3.
16. A process in accordance with
claim 13
wherein the gaseous stream containing less than 10 ppm BCl3 from the secondary condenser is routed to a scrubber to neutralize residual BCl3 in a liquid phase, and produce a gaseous stream containing nitrogen and oxygen.
17. A process in accordance with
claim 13
wherein the third condensed phase is transferred to a product cylinder using ultra high purity inert gas and without any other pumping means.
18. A process for producing ultra-high purity BCl3 in condensed phase and containing less than 10 ppm phosgene from a low purity BCl3 condensed phase having phosgene impurity, the process comprising:
a) injecting an inert gas through a low purity BCl3 having phosgene impurity to produce a vapor stream comprising BCl3, inert gas, and phosgene;
b) decomposing a major portion of the phosgene in the vapor stream comprising BCl3, inert gas, and phosgene by heating to a first temperature to form a first intermediate vapor stream comprising BCl3, inert gas, carbon monoxide, chlorine, HCl and less than 10 ppm phosgene;
c) adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a solid adsorbent material, thereby producing a BCl3/inert gas vapor stream comprising less than about 10 ppm phosgene and some HCl;
d) routing said BCl3/inert gas vapor stream comprising less than about 10 ppm phosgene and some HCl to a condenser;
e) condensing at least a portion of BCl3 in the BCl3/inert gas vapor stream in said condenser, to form a first condensed phase comprising BCl3, and HCl and inert gas and a second vapor stream comprising inert gas, BCl3, oxygen, and nitrogen;
f) routing the second vapor stream to a secondary condenser, thus forming a gaseous stream comprising less than about 10 ppm BCl3 and a second condensed phase comprising BCl3 and HCl; and
g) routing the first condensed phase to a stripper wherein inert gas is used to strip molecules having specific gravity less than BCl3 from the first condensed phase to produce a third condensed phase comprising less than 50 ppm HCl, and a stripped vapor phase.
19. A process for increasing the condensed phase production of BCl3 comprising less than about 10 ppm phosgene, less than 10 ppm chlorine, and less than 10 ppm HCl, the process comprising the steps of:
a) introducing an inert gas into a container having condensed BCl3 therein, said condensed BCl3 having therein a minor portion of phosgene impurity;
b) converting a major portion of the phosgene in the condensed BCl3 to carbon monoxide and chlorine by increasing temperature to produce a phosgene deficient stream;
c) decreasing the temperature of the phosgene deficient stream and contacting it with an adsorbent to remove the chlorine in the stream by adsorption to form a chlorine and phosgene free condensed stream;
d) stripping the chlorine and phosgene free stream using helium to form BCl3 product condensed stream; and
e) using inert gas to transfer the BCl3 product condensed stream to a product receiver.
20. A system for producing ultra-high purity BCl3 in condensed phase having less than 10 ppm phosgene from a low purity BCl3 condensed phase having phosgene impurity, the system comprising:
a) injecting inert gas through a low purity BCl3 having phosgene impurity to produce a vapor stream comprising BCl3, helium, and phosgene;
b) decomposing a major portion of the phosgene in the vapor stream comprising BCl3, inert gas, and phosgene by heating to a first temperature to form a first intermediate vapor stream comprising BCl3, inert gas, carbon monoxide, chlorine, HCl and less than 10 ppm phosgene;
c) adsorbing a major portion of the chlorine in the first intermediate vapor stream at a temperature lower than the first temperature using a solid adsorbent material, thereby producing a BCl3/inert gas vapor stream comprising less than about 10 ppm phosgene and some HCl;
d) routing said BCl3/inert gas vapor stream comprising less than about 10 ppm phosgene and some HCl to a condenser;
e) condensing at least a portion of BCl3 in the BCl3/inert gas vapor stream in said condenser, to form a first condensed phase comprising BCl3, and HCl and inert gas and a second vapor stream comprising inert gas, BCl3, and light impurities;
f) routing the second vapor stream to a secondary condenser, thus forming a gaseous stream comprising less than about 10 ppm BCl3 and a second condensed phase comprising BCl3 and HCl; and
g) routing the first condensed phase to a stripper wherein inert gas is used to strip molecules having specific gravity less than BCl3 from the first condensed phase to produce a third condensed phase comprising less than 50 ppm HCl, and a stripped vapor phase.
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US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN115646125A (en) * 2022-11-08 2023-01-31 瑞燃(上海)环境工程技术有限公司 System and method for purifying and recycling high-concentration hydrogen chloride tail gas
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
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US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
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US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11959171B2 (en) 2022-07-18 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869579B2 (en) * 2001-07-09 2005-03-22 Nippon Sanso Corporation Process for treating exhaust gas
FR2836839B1 (en) * 2002-03-07 2004-07-09 Cit Alcatel PROCESS FOR THE TREATMENT OF GAS EMISSIONS FROM A FIBER OPTIC PREFORM MANUFACTURING UNIT
JP2010111550A (en) * 2008-11-07 2010-05-20 Ube Ind Ltd High-purity boron trichloride and production method thereof
JP5617956B2 (en) * 2013-04-30 2014-11-05 宇部興産株式会社 Method for producing high purity boron trichloride
JP2019119614A (en) * 2017-12-28 2019-07-22 宇部興産株式会社 Method for producing high-purity boron trichloride
JP6984446B2 (en) * 2018-01-29 2021-12-22 宇部興産株式会社 Method for producing high-purity boron trichloride
JP7069473B2 (en) * 2018-02-27 2022-05-18 Ube株式会社 Method for producing high-purity boron trichloride
CN108896689A (en) * 2018-08-13 2018-11-27 朗析仪器(上海)有限公司 A kind of chromatography sampling system for the analysis of Electronic Gases boron chloride
CN108821302A (en) * 2018-09-05 2018-11-16 欧中电子材料(重庆)有限公司 A kind of purification process and device of boron chloride
CN108892147B (en) * 2018-09-05 2023-09-05 欧中电子材料(重庆)有限公司 Separation method and device for separating carbonyl chloride in purification medium
CN111102470B (en) * 2018-10-26 2022-03-01 中化蓝天氟材料有限公司 Method for reducing accumulation of nitrogen trichloride in liquid chlorine use process
CN111991998A (en) * 2020-08-27 2020-11-27 万华化学集团股份有限公司 Method for treating tail gas in isocyanate preparation process

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3126256A (en) 1964-03-24 Removal of phosgene from bcij
US3037337A (en) 1955-09-06 1962-06-05 Thiokol Chemical Corp Purification of boron trichloride
US3043665A (en) 1955-09-06 1962-07-10 Thiokol Chemical Corp Purification of boron trichloride
US2931710A (en) 1956-12-14 1960-04-05 Stauffer Chemical Co Removal of phosgene from boron trihalides
US2920942A (en) 1957-05-17 1960-01-12 Lars C Bratt Purification of bcl with aluminum chloride
US3207581A (en) 1961-11-14 1965-09-21 American Potash & Chem Corp Process for purifying boron trichloride
DE1166753B (en) * 1962-02-07 1964-04-02 Siemens Ag Process for purifying halogen compounds of boron
DE1203741B (en) 1963-10-25 1965-10-28 Bayer Ag Process for the processing of exhaust gases containing hydrogen chloride
US3411867A (en) 1965-05-06 1968-11-19 Allied Chem Method of removing phosgene from gases
US3376113A (en) 1965-05-13 1968-04-02 Dow Chemical Co Catalytic hydrolysis of phosgene
US3789580A (en) 1972-08-17 1974-02-05 Dow Chemical Co Removal of phosgene from an essentially anhydrous gas stream
DE2531545C3 (en) * 1975-07-15 1981-10-29 Basf Ag, 6700 Ludwigshafen Process for removing phosgene from exhaust gases
US4125590A (en) 1977-06-29 1978-11-14 Kerr-Mcgee Chemical Corporation Method for manufacturing boron trichloride
US4204926A (en) 1979-03-16 1980-05-27 The United States Of America As Represented By The Secretary Of The Army Method for the removal of phosgene impurities from boron trichloride
US4210631A (en) 1979-03-26 1980-07-01 Ppg Industries, Inc. Preparation of boron trichloride
US4213948A (en) * 1979-05-29 1980-07-22 Ppg Industries, Inc. Preparation of boron trichloride
DE2919661A1 (en) * 1979-05-16 1980-11-27 Basf Ag METHOD FOR KILLING PHOSGEN
US4238465A (en) 1979-08-01 1980-12-09 Ppg Industries, Inc. Removal of phosgene from boron trichloride
US4405423A (en) 1981-09-03 1983-09-20 Freund Samuel M Method for removal of phosgene from boron trichloride
US4493818A (en) * 1982-11-08 1985-01-15 The Dow Chemical Company Phosgene removal process
JPS6096523A (en) * 1983-10-26 1985-05-30 Showa Denko Kk Purification of boron trichloride
JPS60106532A (en) * 1983-11-15 1985-06-12 Showa Denko Kk Regeneration of adsorbent for boron trichloride
US5030362A (en) 1989-08-21 1991-07-09 Exxon Chemical Patents Inc. Process for stripping liquid systems and sparger system useful therefor
JPH10265216A (en) 1997-03-25 1998-10-06 Nissan Chem Ind Ltd Purification of boron trichloride
US5833814A (en) 1997-06-27 1998-11-10 The Boc Group, Inc. Apparatus and method for purifying boron trichloride by removal of phosgene
KR100253097B1 (en) * 1997-12-08 2000-04-15 윤종용 Purifier of waste gas for semiconductor device fabricating
JP2000053414A (en) * 1998-08-05 2000-02-22 Ube Ind Ltd High purification of boron trichloride and high purity boron trichloride

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US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
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US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
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US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11411088B2 (en) 2018-11-16 2022-08-09 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
CN109573950A (en) * 2019-01-31 2019-04-05 内蒙古通威高纯晶硅有限公司 A kind of Analytic Tower hydrogen chloride recovery system and technique
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11453946B2 (en) 2019-06-06 2022-09-27 Asm Ip Holding B.V. Gas-phase reactor system including a gas detector
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US11961741B2 (en) 2021-03-04 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11959168B2 (en) 2021-04-26 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11959171B2 (en) 2022-07-18 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
CN115646125A (en) * 2022-11-08 2023-01-31 瑞燃(上海)环境工程技术有限公司 System and method for purifying and recycling high-concentration hydrogen chloride tail gas

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US6361750B2 (en) 2002-03-26
EP1081095A1 (en) 2001-03-07
US6238636B1 (en) 2001-05-29

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