US2847320A - Method for gas plating with aluminum organo compounds - Google Patents
Method for gas plating with aluminum organo compounds Download PDFInfo
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- US2847320A US2847320A US583422A US58342256A US2847320A US 2847320 A US2847320 A US 2847320A US 583422 A US583422 A US 583422A US 58342256 A US58342256 A US 58342256A US 2847320 A US2847320 A US 2847320A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
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- Vacuum metallizing In vacuum metallizing, utilizing aluminum as the metallizing agent, aluminum is heated above its melting point and the plating is carried out under sub-atmospheric pressure conditions. Vacuum metallizing, however, has many disadvantages. Principally among the disadvantages is that only surfaces perpendicular to the linear vapor propagation are metallized. The process also is not adapted for metallizing complex shapes. Also the vacuum deposition of metals has poor adhesion and often has to be lacquered in order to produce a satisfactory These poor adhesion properties are apparently due to the relative difference in the tempera ture of the plating surfaces as employed in vacuum metallizing processes. Further, the vacuum metallizing process is a very slow one.
- the difliculties as encountered with the use of volatilized aluminum metal is avoided by employing heat-decomposable organo-aluminum compounds. Gas plating of this light metal is carried out at relatively low temperatures and pressures, as compared to the vaporized metal.
- the material to be plated with aluminum metal is placed in an enclosure free of air and the plating carried out in the presence of an inert atmosphere.
- Deposition of aluminum metal is accomplished by heating the article or substrate to be plated to a temperature suflicient to cause decomposition of the organo-aluminum compound brought in contact therewith, thus releasing aluminum metal which is deposited onto the surface of the substrate.v
- the present invention makes it possible to deposit aluminum on the surfaces or" various materials, and such as will withstand the temperature used to bring about decomposition of the gaseous aluminum alkyl.
- Plating Patent of the light metal may be made on various metal sur faces, e. g., steel, iron, copper, magnesium, or metal alloys as well as non-metal materials, e. g., glass, molded plastics, wood, paper and the like. Gas plating of aluminum on bearing and machine elements, and hardware,
- gas plating metal surfaces for example the metal, after being thoroughly cleaned of foreign matter, is subjected to gas plating utilizing a suitable organo-metallrc compound of aluminum and which compound is heatdecomposable at temperatures substantially below the I vaporization point of the light metal.
- the decomposition or dissassociation of the gaseous metal compound is made to take place in an atmosphere which is inert to the nascent metal, being especially free of oxygen, hydrogen and water.
- An atmosphere in the plating chamber of dry nitrogen gas ha been found suitable.
- This inert gas also may be used as a carrier'and protecting blanket for the aluminum alkyl compound.
- gases which are inert and free of oxygen and moisture may be used in place of nitrogen, such as helium, argon, etc.
- the material to be plated is placed in a closed chamber or container having an inlet and outlet opening. Thereafter the air and water vapor are displaced by forcing dry nitrogen through the chamber under suflicient pressure to displace the air.
- the surface of the material to be plated with aluminum I is initially cleaned of foreign matter and dried to remove moisture.
- Sandblasting, wire brushing or the like are suitable methods to remove solid foreign matter from metal surfaces. and cleaned, the same may be washed with petroleum solvent, such as xylol, toluol or the like, and all traces of moisture are removed by heating the material at 250 to 300 C. for a time suflicient to drive off any residual moisture.
- the same while retained out of contact with air or moisture, is introduced into the plating chamber which is maintained filled with inert gas such as nitrogen, helium or argon, and the article heated as described. While the article is heated in the plating chamber under an atmosphere of nitrogen, an organo-aluminum compound e. g., aluminum alkyl such as aluminum triisobutyl is introduced and the gaseous aluminum alkyl brought in contact with the surface of the heated article, the temperature of the latter being high enough to cause the gaseous aluminum alkyl compound coming in contact therewith to decompose or disassociate and deposit aluminum metal onto the surface of the article. After a desired thickness of aluminum deposit is obtained, the process is stopped and excessaluminum alkyl returned to storage.
- inert gas such as nitrogen, helium or argon
- Triisobutyl aluminum is supplied in steel pressure bottles, with brass valves.
- the pressure bottle which is fitted with a rubber dam is packed to a maximum of 60% of the free volume with triisobutylaluminum liquid, and the remaining space is pressured to a maximum of 30 pounds/sq. in. gauge with nitrogen.
- the bottle is provided with an adapter valve and tube outlet connection to allow the internal pressure to push out the liquid when the bottle is inverted. Fittings should be opened under a blanket of nitrogen and receiving containers should be dry, and previously flushed with dry nitrogen. Storage temperatures for aluminum triisobutyl are kept below 60 C. and preferably 0 to 10 C.
- organo aluminum compounds which may be used Manual or chemical cleaning means or a suitable combination thereof may be employed for this Where the surface is to be de-greased to produce aluminum metal deposits in accordance with this'invention are listed in the following table along with their decomposition plating chamber temperatures and pressures:
- organo-aluminum compound was provided as a 25% solution of the aluminum compound in normal heptane and the plating chamber was filled with dry nitrogen.
- AlHBr Chloroaluminum dihydride ClAlH2 Aluminum tripropyl oanmai Aluminum triisobutyl (O4Hg) Al
- the aluminum alkyls are required to be kept free of uncontrolled amounts of oxygen and water vapor during the plating operation, the organo-aluminum heptane or other alkanes and, in such solvents, can be handled readily, even in the open air at ordinary room temperatures.
- the aluminum alkyls are dissolved in heptane or the like solvent and stored in self-sealing containers, being retained under positive pressure of inert gas.
- FIG. 1 In the drawing there is shown in elevation a schematic layout of an apparatus for depositing aluminum metal as described.
- a tank forxsupplying nitrogen under pressure designated generally at 8
- the same being connected through a flow meter 9 to a drying tube 10
- injection needle 11 insertedinto a self-sealing rubber closure 12.
- the system is connected through a vacuum pump 13 to maintain the proper pressure in the system.
- the injection needle 11 is connected to an evaporation container 14 which is heated by an electrical resistance coil 15, the latter being controlled by a rheostat 16.
- Aluminum organo compound is introduced through a hypodermic needle 17, the compound being contained in solution in the cylinder 18 and injected into the system in small increments by a plunger of the cylinder 18.
- a thermometer 19 is suitably inserted into the container 14 as illustrated in the drawing.
- the material admitted to the evaporation container 14 is flash evaporated and con-- ducted to the plating tube 21 which is surrounded by a heating oven 22, the temperature of the latter being controlled by a suitable resistance coil or rheostat 23.
- the tube 21 comprises an elongated pipe preferably made of transparent material such as glass or plastic, and is heated by the oven 22. Control of the temperature of the oven is set by operation of the temperature dial 24 on the oven.
- Residual aluminum organic compound and waste products and organic solvents such as heptane are condensed in the water cooled bubble traps 29 and 3.0, the latter being preferably surrounded by cooling water, as shown in the drawings.
- a manometer 31 is connected to the conduit 33 leading from the bubble trap 30 and conduit 33is connected through a 3-way valve 34 to the discharge line .35.
- the vacuum pump 13 is suitably connected through the threeway valve 34 by line 36 whereby the same may be connected to the line 33 to evacuate the system during the plating operation.
- Articles to be plated with aluminum, .such as illustrated at 26, are suspended in the tube 21'by means of a wire 27.
- Other means may be used to support the articles or where long continuous lengths of articlesare to be plated the same may be moved continuously therethrough while the plating chamber is maintained under a sub-atmospheric pressure at the inlet and outlet to prevent the surrounding atmosphere from entering the plating tube.
- the equipment In the operation of the apparatus the equipmentisfirst flushed with oil pumped nitrogen delivered from the tank 8 through the flow meter 9 and drying tube 10 and hence intothe system. After flushing the system with nitrogen for about 15 minutes the injection needle 11 is withdrawn and the system is evacuated by operation of the vacuum pump 13. A pressure in the system of slightly below atmospheric pressure is maintained, as indicated by the manometer 31.
- the aluminum compound is injected through the hypodermic needle 17 into the evaporation container. injected, of about one milliliter fractions. The timeintervals for injection are approximately from one to one and one half minute intervals.
- the organo aluminum compound after being injected into the evaporation container 14 is flashed vaporized and passed to the plating chamber 21, the same being drawn through the system by operation of the vacuum pump 13.
- the temperature dial 24 is set at the proper point so that this temperature is maintained in the plating tube 21.
- Residual aluminum alkyl, degradation products and heptane as drawn through the system and discharged from the plating tube are caught and condensed in the water cooled bubble bottles or traps 29 and 30 as described.
- the nitrogen is introduced into the system in a continuous flow similar as during flushing of the apparatus. After diluting the residual material in the evaporation-container with heptane and blanketing it with nitrogen the system may be disassembled and cleaned in preparation for another plating operation.
- a method of gas plating aluminum metal ontosub strate by decornposition of an organo 'aluminum 'halide' Increments of the aluminum compound are compound which comprises the steps of cleaning the substate to remove foreign matter and moisture from the surface, heating the cleaned substrate in an unoxidizing atmosphere which is free of water vapor, subjecting the thus heated substrate to an atmosphere containing a heatdecomposable organo metallic alkyl halide compound of aluminum, the temperature of the substrate being high enough to cause thermal decomposition of the organo metallic halide aluminum compound and deposition of aluminum metal onto said substrate.
- a method of gas plating aluminum metal onto substrate by decomposition of an organo aluminum halide compound which comprises the steps of cleaning the sub strate to remove foreign matter and moisture from the surface, heating the cleaned substrate in an unoxidizing atmosphere which is free of water vapor, subjecting the thus heated substrate to an atmosphere containing a heatdecomposable organo halide metallic 'compound of aluminum under reduced atmospheric pressure conditions, the temperature of the substrate being high enough to cause thermal decomposition of the organo metallic halide aluminum compound and deposition of aluminum metal onto said substrate, said metallic organo compound being selected from a group consisting of diethyl aluminum chloride, diethyl aluminum bromide, dimethyl aluminum chloride, dipropyl aluminum chloride, di-isopropyl aluminum chloride, and mixtures thereof.
- a method of gas plating aluminum metal onto substrate by decomposition of an organo alkyl aluminum halide compound which comprises the steps of cleaning the substrate to remove foreign matter and moisture from the surface, heating the cleaned substrate in an atmosphere comprising inert gas which is free of air and water vapor, said atmosphere being under reduced atmospheric pressure, subjecting the thus heated substrate to an atmosphere containing a heat-decomposable organo metallic halide compound of aluminum, the temperature of the substrate being high enough to cause thermal decomposition of the organo metallic aluminum halide compound and deposition of aluminum metal onto said substrate.
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Physical Vapour Deposition (AREA)
Description
s- 2, 1958 J. J. BULLOFF 2,847,320
METHOD FOR GAS PLATING WITH ALUMINUM ORGANO COMPOUNDS Filed May 8, 1956 Mg/ZM.
Attorneys adherent coating.
Unite METHOD FOR GAS PIJATING WITH ALUMINUM ORGANQ COMPOUNDS Jack J. Bullotf, Dayton, Ohio, assignor to The Commonwealth Engineering Company of Ohio, Dayton, Ohio This invention relates to gas plating with organoaluminum compounds to deposit aluminum metal, and more particularly to an improved apparatus and method for carrying this out.
The problem of depositing aluminum metal by volatilization of the metal and condensing the same onto a surface to form a coating of the metal thereon has been difficult to achieve, heretofore, and of little commercial value. This is principally because of the high temperatures necessitated.
In vacuum metallizing, utilizing aluminum as the metallizing agent, aluminum is heated above its melting point and the plating is carried out under sub-atmospheric pressure conditions. Vacuum metallizing, however, has many disadvantages. Principally among the disadvantages is that only surfaces perpendicular to the linear vapor propagation are metallized. The process also is not adapted for metallizing complex shapes. Also the vacuum deposition of metals has poor adhesion and often has to be lacquered in order to produce a satisfactory These poor adhesion properties are apparently due to the relative difference in the tempera ture of the plating surfaces as employed in vacuum metallizing processes. Further, the vacuum metallizing process is a very slow one.
In accordance with the present invention, the difliculties as encountered with the use of volatilized aluminum metal is avoided by employing heat-decomposable organo-aluminum compounds. Gas plating of this light metal is carried out at relatively low temperatures and pressures, as compared to the vaporized metal. The material to be plated with aluminum metal is placed in an enclosure free of air and the plating carried out in the presence of an inert atmosphere. Deposition of aluminum metal is accomplished by heating the article or substrate to be plated to a temperature suflicient to cause decomposition of the organo-aluminum compound brought in contact therewith, thus releasing aluminum metal which is deposited onto the surface of the substrate.v
The present invention makes it possible to deposit aluminum on the surfaces or" various materials, and such as will withstand the temperature used to bring about decomposition of the gaseous aluminum alkyl. Plating Patent of the light metal may be made on various metal sur faces, e. g., steel, iron, copper, magnesium, or metal alloys as well as non-metal materials, e. g., glass, molded plastics, wood, paper and the like. Gas plating of aluminum on bearing and machine elements, and hardware,
ICC
utilizing volatilized metals.
In gas plating metal surfaces, for example the metal, after being thoroughly cleaned of foreign matter, is subjected to gas plating utilizing a suitable organo-metallrc compound of aluminum and which compound is heatdecomposable at temperatures substantially below the I vaporization point of the light metal. The decomposition or dissassociation of the gaseous metal compound is made to take place in an atmosphere which is inert to the nascent metal, being especially free of oxygen, hydrogen and water. An atmosphere in the plating chamber of dry nitrogen gas ha been found suitable. This inert gas also may be used as a carrier'and protecting blanket for the aluminum alkyl compound. Other gases which are inert and free of oxygen and moisture may be used in place of nitrogen, such as helium, argon, etc.
In carrying out the aluminum metal plating in accordance with the preferred practice of this invention, the material to be plated is placed in a closed chamber or container having an inlet and outlet opening. Thereafter the air and water vapor are displaced by forcing dry nitrogen through the chamber under suflicient pressure to displace the air.
The surface of the material to be plated with aluminum I is initially cleaned of foreign matter and dried to remove moisture.
purpose. Sandblasting, wire brushing or the like are suitable methods to remove solid foreign matter from metal surfaces. and cleaned, the same may be washed with petroleum solvent, such as xylol, toluol or the like, and all traces of moisture are removed by heating the material at 250 to 300 C. for a time suflicient to drive off any residual moisture.
After the article has been cleaned thoroughly and freed of all moisture and rendered chemically clean, the same, while retained out of contact with air or moisture, is introduced into the plating chamber which is maintained filled with inert gas such as nitrogen, helium or argon, and the article heated as described. While the article is heated in the plating chamber under an atmosphere of nitrogen, an organo-aluminum compound e. g., aluminum alkyl such as aluminum triisobutyl is introduced and the gaseous aluminum alkyl brought in contact with the surface of the heated article, the temperature of the latter being high enough to cause the gaseous aluminum alkyl compound coming in contact therewith to decompose or disassociate and deposit aluminum metal onto the surface of the article. After a desired thickness of aluminum deposit is obtained, the process is stopped and excessaluminum alkyl returned to storage.
Triisobutyl aluminum is supplied in steel pressure bottles, with brass valves. The pressure bottle which is fitted with a rubber dam is packed to a maximum of 60% of the free volume with triisobutylaluminum liquid, and the remaining space is pressured to a maximum of 30 pounds/sq. in. gauge with nitrogen. To remove the contents, the bottle is provided with an adapter valve and tube outlet connection to allow the internal pressure to push out the liquid when the bottle is inverted. Fittings should be opened under a blanket of nitrogen and receiving containers should be dry, and previously flushed with dry nitrogen. Storage temperatures for aluminum triisobutyl are kept below 60 C. and preferably 0 to 10 C.
Other organo aluminum compounds which may be used Manual or chemical cleaning means or a suitable combination thereof may be employed for this Where the surface is to be de-greased to produce aluminum metal deposits in accordance with this'invention are listed in the following table along with their decomposition plating chamber temperatures and pressures:
above compounds the organo-aluminum compound was provided as a 25% solution of the aluminum compound in normal heptane and the plating chamber was filled with dry nitrogen.
The best results were obtained using the following aluminum alkyls:
Table II Compound Formula Trimethylaluminum (CHMAI D imethylaluminum chloride..- (CH zAlCl Triethylaluminum (C2 3 Diethylaluminum chloride (C2Hs)zAlCl Diethylaluminum bromide. (museum Diethylaluminum hydride. (CzHahAlH Diisopropylaluminum chlorid (CQH'DAICI .Dibromcalum'mum hydride... AlHBr; Chloroaluminum dihydride ClAlH2 Aluminum tripropyl oanmai Aluminum triisobutyl (O4Hg) Al While the aluminum alkyls are required to be kept free of uncontrolled amounts of oxygen and water vapor during the plating operation, the organo-aluminum heptane or other alkanes and, in such solvents, can be handled readily, even in the open air at ordinary room temperatures. Preferably the aluminum alkyls are dissolved in heptane or the like solvent and stored in self-sealing containers, being retained under positive pressure of inert gas.
One embodiment of an apparatus suitable for carrying out the gas plating of aluminum metal by the use of decomposable organo-aluminum compounds is illustrated in the accompanying drawing and forming a part of this application.
In the drawing there is shown in elevation a schematic layout of an apparatus for depositing aluminum metal as described. As illustrated, there is provided a tank forxsupplying nitrogen under pressure, designated generally at 8, the same being connected through a flow meter 9 to a drying tube 10, and injection needle 11 insertedinto a self-sealing rubber closure 12. The system is connected through a vacuum pump 13 to maintain the proper pressure in the system. The injection needle 11 is connected to an evaporation container 14 which is heated by an electrical resistance coil 15, the latter being controlled by a rheostat 16.
Aluminum organo compound is introduced through a hypodermic needle 17, the compound being contained in solution in the cylinder 18 and injected into the system in small increments by a plunger of the cylinder 18. A thermometer 19 is suitably inserted into the container 14 as illustrated in the drawing. The material admitted to the evaporation container 14 is flash evaporated and con-- ducted to the plating tube 21 which is surrounded by a heating oven 22, the temperature of the latter being controlled by a suitable resistance coil or rheostat 23.
The tube 21 comprises an elongated pipe preferably made of transparent material such as glass or plastic, and is heated by the oven 22. Control of the temperature of the oven is set by operation of the temperature dial 24 on the oven.
Residual aluminum organic compound and waste products and organic solvents such as heptane are condensed in the water cooled bubble traps 29 and 3.0, the latter being preferably surrounded by cooling water, as shown in the drawings.
A manometer 31 is connected to the conduit 33 leading from the bubble trap 30 and conduit 33is connected through a 3-way valve 34 to the discharge line .35. The vacuum pump 13 is suitably connected through the threeway valve 34 by line 36 whereby the same may be connected to the line 33 to evacuate the system during the plating operation.
Articles to be plated with aluminum, .such as illustrated at 26, are suspended in the tube 21'by means of a wire 27. Other means may be used to support the articles or where long continuous lengths of articlesare to be plated the same may be moved continuously therethrough while the plating chamber is maintained under a sub-atmospheric pressure at the inlet and outlet to prevent the surrounding atmosphere from entering the plating tube.
In the operation of the apparatus the equipmentisfirst flushed with oil pumped nitrogen delivered from the tank 8 through the flow meter 9 and drying tube 10 and hence intothe system. After flushing the system with nitrogen for about 15 minutes the injection needle 11 is withdrawn and the system is evacuated by operation of the vacuum pump 13. A pressure in the system of slightly below atmospheric pressure is maintained, as indicated by the manometer 31.
At the proper temperature and pressure corresponding to that required for evaporating the aluminum organo compound used and which is placed in the hypodermic needle cylinder 18, the aluminum compound is injected through the hypodermic needle 17 into the evaporation container. injected, of about one milliliter fractions. The timeintervals for injection are approximately from one to one and one half minute intervals. The organo aluminum compound after being injected into the evaporation container 14 is flashed vaporized and passed to the plating chamber 21, the same being drawn through the system by operation of the vacuum pump 13.
To insure the maintenance of the proper temperature in the plating tube the same is warmed for about 30 minutes at'the required temperature to cause decomposition of the aluminum organo vapor compound and to accomplish this the temperature dial 24 is set at the proper point so that this temperature is maintained in the plating tube 21. Residual aluminum alkyl, degradation products and heptane as drawn through the system and discharged from the plating tube are caught and condensed in the water cooled bubble bottles or traps 29 and 30 as described. The nitrogen is introduced into the system in a continuous flow similar as during flushing of the apparatus. After diluting the residual material in the evaporation-container with heptane and blanketing it with nitrogen the system may be disassembled and cleaned in preparation for another plating operation.
It will be understood that while there has been described and'set forth certain specific embodiments of this invention, it is not intended that the invention be thus limited thereto and it is manifest that various substitutions and changes may be made by those skilled in the art and to which the invention is readily susceptible without departing from the spirit and scope of this disclosure and as'more particularly set forth in the appended claims.
What is claimed is:
1. A method of gas plating aluminum metal ontosub strate by decornposition of an organo 'aluminum 'halide' Increments of the aluminum compound are compound which comprises the steps of cleaning the substate to remove foreign matter and moisture from the surface, heating the cleaned substrate in an unoxidizing atmosphere which is free of water vapor, subjecting the thus heated substrate to an atmosphere containing a heatdecomposable organo metallic alkyl halide compound of aluminum, the temperature of the substrate being high enough to cause thermal decomposition of the organo metallic halide aluminum compound and deposition of aluminum metal onto said substrate.
2. A method of gas plating aluminum metal onto substrate by decomposition of an organo aluminum halide compound which comprises the steps of cleaning the sub strate to remove foreign matter and moisture from the surface, heating the cleaned substrate in an unoxidizing atmosphere which is free of water vapor, subjecting the thus heated substrate to an atmosphere containing a heatdecomposable organo halide metallic 'compound of aluminum under reduced atmospheric pressure conditions, the temperature of the substrate being high enough to cause thermal decomposition of the organo metallic halide aluminum compound and deposition of aluminum metal onto said substrate, said metallic organo compound being selected from a group consisting of diethyl aluminum chloride, diethyl aluminum bromide, dimethyl aluminum chloride, dipropyl aluminum chloride, di-isopropyl aluminum chloride, and mixtures thereof.
3. A method of gas plating aluminum metal onto substrate by decomposition of an organo alkyl aluminum halide compound which comprises the steps of cleaning the substrate to remove foreign matter and moisture from the surface, heating the cleaned substrate in an atmosphere comprising inert gas which is free of air and water vapor, said atmosphere being under reduced atmospheric pressure, subjecting the thus heated substrate to an atmosphere containing a heat-decomposable organo metallic halide compound of aluminum, the temperature of the substrate being high enough to cause thermal decomposition of the organo metallic aluminum halide compound and deposition of aluminum metal onto said substrate.
4. The method of gas plating aluminum metal onto a substrate, as set forth in claim 3, wherein the substrate is magnesium metal.
References Cited in the file of this patent UNITED STATES PATENTS 2,604,395 Gonser et al July 22, 1952 2,689,807 Kempe et a1 Sept. 21, 1954 2,701,901 Pawlyk Feb. 15, 1955 2,711,973 Wainer et al June 28, 1955 2,759,855 Medcalf et al Aug. 21, 1956 FOREIGN PATENTS 633,701 Great Britain Dec. 19, 1949
Claims (1)
1. A METHOD OF GAS PLATING ALUMINUM METAL ONTO SUBSTRATE BY DECOMPOSITION OF AN ARGANO ALUMINUM HALIDE COMPOUND WHICH COMPRISES THE STEPS OF CLEANING THE SUBSTATE TO REMOVE FOREIGN MATTER AND MOISTURE FROM THE SURFACE, HEATING THE CLEANED SUBSTRATE IN AN UNOXIDIZING ATMOSPHERE WHICH IS FREE OF WATER VAPOR, SUBJECTING THE THUS HEATED SUBSTRATE TO AN ATMOSPHERE CONTAINING A HEATDECOMPOSABLE ORGANO METALLIC ALKYL HALIDE COMPOUND OF ALUMINUM, THE TEMPERATURE OF THE SUBSTRATE BEING HIGH ENOUGH TO CAUSE THERMAL DECOMPOSITION OF THE ORGANO METALLIC HLIDE ALUMINUM COMPOUND AND DEPOSITION OF ALUMINUM METAL ONTO SAID SUBSTRATE.
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Cited By (247)
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US2921868A (en) * | 1956-06-07 | 1960-01-19 | Union Carbide Corp | Aluminum gas plating of various substrates |
US2929739A (en) * | 1958-11-07 | 1960-03-22 | Union Carbide Corp | Aluminum plating |
US2982016A (en) * | 1955-04-12 | 1961-05-02 | Union Carbide Corp | Method of gas plating an alloy of aluminum and magnesium |
US2985509A (en) * | 1958-02-24 | 1961-05-23 | Union Carbide Corp | Method of recovering metal carbonyls from gases |
US2989421A (en) * | 1957-06-18 | 1961-06-20 | Union Carbide Corp | Gas plating of inert compounds on quartz crucibles |
US3041197A (en) * | 1959-06-01 | 1962-06-26 | Berger Carl | Coating surfaces with aluminum |
US3107179A (en) * | 1959-09-21 | 1963-10-15 | Wilbur M Kohring | Process for making carbon-metal resistors |
US3202537A (en) * | 1962-05-01 | 1965-08-24 | Ethyl Corp | Method of metal plating by fluidized bed |
US3214288A (en) * | 1961-12-14 | 1965-10-26 | Nat Steel Corp | Process for the deposition of metallic aluminum |
US3511703A (en) * | 1963-09-20 | 1970-05-12 | Motorola Inc | Method for depositing mixed oxide films containing aluminum oxide |
WO1990012900A1 (en) * | 1989-04-19 | 1990-11-01 | Asm International N.V. | Method for providing a proportioned vapour flow and also apparatus for carrying it out |
US4980203A (en) * | 1988-07-01 | 1990-12-25 | Centre De Recherche Et De Promotion Du Magnesium (Cepromag) | Process for producing a protective film on magnesium containing substrates by chemical vapor deposition of two or more layers |
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US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
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US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11164955B2 (en) | 2017-07-18 | 2021-11-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
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US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB633701A (en) * | 1946-10-22 | 1949-12-19 | Metal Gas Company Ltd | Improvements in and relating to the coating of metals and alloys with metals |
US2604395A (en) * | 1945-11-19 | 1952-07-22 | Fansteel Metallurgical Corp | Method of producing metallic bodies |
US2689807A (en) * | 1950-06-16 | 1954-09-21 | Thompson Prod Inc | Method of coating refractory metal articles |
US2701901A (en) * | 1952-04-03 | 1955-02-15 | Ohio Commw Eng Co | Method of manufacturing thin nickel foils |
US2711973A (en) * | 1949-06-10 | 1955-06-28 | Thompson Prod Inc | Vapor phase coating of molybdenum articles |
US2759855A (en) * | 1953-08-24 | 1956-08-21 | Eagle Picher Co | Coated electronic device and method of making same |
-
1956
- 1956-05-08 US US583422A patent/US2847320A/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2604395A (en) * | 1945-11-19 | 1952-07-22 | Fansteel Metallurgical Corp | Method of producing metallic bodies |
GB633701A (en) * | 1946-10-22 | 1949-12-19 | Metal Gas Company Ltd | Improvements in and relating to the coating of metals and alloys with metals |
US2711973A (en) * | 1949-06-10 | 1955-06-28 | Thompson Prod Inc | Vapor phase coating of molybdenum articles |
US2689807A (en) * | 1950-06-16 | 1954-09-21 | Thompson Prod Inc | Method of coating refractory metal articles |
US2701901A (en) * | 1952-04-03 | 1955-02-15 | Ohio Commw Eng Co | Method of manufacturing thin nickel foils |
US2759855A (en) * | 1953-08-24 | 1956-08-21 | Eagle Picher Co | Coated electronic device and method of making same |
Cited By (292)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2982016A (en) * | 1955-04-12 | 1961-05-02 | Union Carbide Corp | Method of gas plating an alloy of aluminum and magnesium |
US2921868A (en) * | 1956-06-07 | 1960-01-19 | Union Carbide Corp | Aluminum gas plating of various substrates |
US2989421A (en) * | 1957-06-18 | 1961-06-20 | Union Carbide Corp | Gas plating of inert compounds on quartz crucibles |
US2985509A (en) * | 1958-02-24 | 1961-05-23 | Union Carbide Corp | Method of recovering metal carbonyls from gases |
US2929739A (en) * | 1958-11-07 | 1960-03-22 | Union Carbide Corp | Aluminum plating |
US3041197A (en) * | 1959-06-01 | 1962-06-26 | Berger Carl | Coating surfaces with aluminum |
US3107179A (en) * | 1959-09-21 | 1963-10-15 | Wilbur M Kohring | Process for making carbon-metal resistors |
US3214288A (en) * | 1961-12-14 | 1965-10-26 | Nat Steel Corp | Process for the deposition of metallic aluminum |
US3202537A (en) * | 1962-05-01 | 1965-08-24 | Ethyl Corp | Method of metal plating by fluidized bed |
US3511703A (en) * | 1963-09-20 | 1970-05-12 | Motorola Inc | Method for depositing mixed oxide films containing aluminum oxide |
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US5354433A (en) * | 1989-04-09 | 1994-10-11 | Asm International N.V. | Method for producing a flow of triisobutylaluminum from liquid triisobutylaluminum containing isobutene |
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US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11453946B2 (en) | 2019-06-06 | 2022-09-27 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US12107000B2 (en) | 2019-07-10 | 2024-10-01 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US12112940B2 (en) | 2019-07-19 | 2024-10-08 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US12040229B2 (en) | 2019-08-22 | 2024-07-16 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US12033849B2 (en) | 2019-08-23 | 2024-07-09 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US12119220B2 (en) | 2019-12-19 | 2024-10-15 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US12033885B2 (en) | 2020-01-06 | 2024-07-09 | Asm Ip Holding B.V. | Channeled lift pin |
US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
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US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
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US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
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US12087586B2 (en) | 2020-04-15 | 2024-09-10 | Asm Ip Holding B.V. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
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US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US12051602B2 (en) | 2020-05-04 | 2024-07-30 | Asm Ip Holding B.V. | Substrate processing system for processing substrates with an electronics module located behind a door in a front wall of the substrate processing system |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
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US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US12106944B2 (en) | 2020-06-02 | 2024-10-01 | Asm Ip Holding B.V. | Rotating substrate support |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US12020934B2 (en) | 2020-07-08 | 2024-06-25 | Asm Ip Holding B.V. | Substrate processing method |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US12055863B2 (en) | 2020-07-17 | 2024-08-06 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
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US12074022B2 (en) | 2020-08-27 | 2024-08-27 | Asm Ip Holding B.V. | Method and system for forming patterned structures using multiple patterning process |
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