GB1186889A - Methods and apparatus for introducing Impurities into Gas Streams - Google Patents
Methods and apparatus for introducing Impurities into Gas StreamsInfo
- Publication number
- GB1186889A GB1186889A GB2508167A GB2508167A GB1186889A GB 1186889 A GB1186889 A GB 1186889A GB 2508167 A GB2508167 A GB 2508167A GB 2508167 A GB2508167 A GB 2508167A GB 1186889 A GB1186889 A GB 1186889A
- Authority
- GB
- United Kingdom
- Prior art keywords
- impurity
- reservoir
- diffusion
- carrier gas
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
Abstract
1,186,889. Mixing apparatus. WESTERN ELECTRIC CO. Inc. 31 May, 1967 [2 June, 1966], No. 25081/67. Heading B1C. [Also in Division H1] Apparatus for mixing a minute proportion of impurity for example dopant used in the production of epitaxial semiconductors, with a carrier gas comprises a mixing chamber 11 to which carrier gas (e.g. hydrogen, or 8 % hydrogen in helium) is admitted through a tube 12, and a capillary tube 13 through which the impurity passes by diffusion from a reservoir 14. The rate of diffusion is dependent on the partial impurity pressures P 1 , p 2 in the reservoir and the mixing chamber, but at low concentrations of impurity (e.g. 1 in 10<SP>9</SP>) in the mixture p, is insignificant and the rate of diffusion is dependent solely on .p 1 , and therefore, on the temperature of the reservoir. The apparatus is immersed in a thermostatically controlled bath 40 and the carrier gas flow is controlled independently by a valve 18. Further impurity is introduced by hypodermic syringe through a serum-type cap 26. The flow is also mixed with a flow of deposition material, e.g. silicon tetrachloride in hydrogen before entering the epitaxial reaction chamber 34, which contains the semiconductor slice 34 and is heated by an induction coil 35.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55488866A | 1966-06-02 | 1966-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1186889A true GB1186889A (en) | 1970-04-08 |
Family
ID=24215113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2508167A Expired GB1186889A (en) | 1966-06-02 | 1967-05-31 | Methods and apparatus for introducing Impurities into Gas Streams |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE699154A (en) |
| DE (1) | DE1644041B1 (en) |
| GB (1) | GB1186889A (en) |
| NL (1) | NL6706680A (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| BE699154A (en) | 1967-11-03 |
| DE1644041B1 (en) | 1972-03-16 |
| NL6706680A (en) | 1967-12-04 |
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