GB995087A - Method for the controlled doping of crystalline substances - Google Patents

Method for the controlled doping of crystalline substances

Info

Publication number
GB995087A
GB995087A GB23041/61A GB2304161A GB995087A GB 995087 A GB995087 A GB 995087A GB 23041/61 A GB23041/61 A GB 23041/61A GB 2304161 A GB2304161 A GB 2304161A GB 995087 A GB995087 A GB 995087A
Authority
GB
United Kingdom
Prior art keywords
rod
phosphorus
boron
silicon
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23041/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DEW28070A external-priority patent/DE1190918B/en
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB995087A publication Critical patent/GB995087A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

995,087. Zone-melting. WACKER CHEMIE G.m.b.H. June 26, 1961 [June 24, 1960], No. 23041/61. Heading B1S. A vertical rod of material is doped uniformly or non-uniformly in a predetermined continuous or discontinuous manner during zonerefining by supplying a doping agent in a controlled manner, as a solid, liquid, or gas, laterally to one or more molten zones during their passage through the rod. The doping agent may be supplied to a partial molten zone preceding a complete molten zone (see French Specification 1,255,849). The doping agent may affect the semi-conductor, optical, mechanical, magnetic, or thermal properties of the material of the rod ; or form a compound, e.g. gallium arsenide or indium phosphide, therewith. A rod of silicon may be doped with a thinner rod of silicon containing boron, aluminium, indium, gallium, phosphorus, arsenic, or antimony; with a thinner rod of phosphorus-containing boron ; with phosphorus- or boron-containing silicon in gaseous suspension ; or with boron hydrides, boron halides, phosphorus vapour, phosphine, or phosphorus halides. A length of a silicon rod may be doped with boron and a succeeding length with phosphorus. n- and p-doping agents may be supplied simultaneously. Heating may be by induction, radiation, electron- or ionbombardment, or plasma burner. The pressure during zone-melting may be at or above or below atmospheric pressure. An inductionheated molten zone may be fed with a thin rod as shown in Figs. 1, 2 or 4 ; or with a gas or vapour as shown in Figs. 7-12.
GB23041/61A 1960-06-24 1961-06-26 Method for the controlled doping of crystalline substances Expired GB995087A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW28070A DE1190918B (en) 1960-06-24 1960-06-24 Process for the targeted doping of rod-shaped bodies during zone melting

Publications (1)

Publication Number Publication Date
GB995087A true GB995087A (en) 1965-06-16

Family

ID=7598824

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23041/61A Expired GB995087A (en) 1960-06-24 1961-06-26 Method for the controlled doping of crystalline substances

Country Status (4)

Country Link
US (1) US3141848A (en)
BE (1) BE605268A (en)
GB (1) GB995087A (en)
NL (1) NL266156A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3311510A (en) * 1964-03-16 1967-03-28 Mandelkorn Joseph Method of making a silicon semiconductor device
US3477959A (en) * 1967-04-24 1969-11-11 Northern Electric Co Method and apparatus for producing doped,monocrystalline semiconductor materials
BE788026A (en) * 1971-08-26 1973-02-26 Siemens Ag METHOD AND DEVICE FOR DIRECTED INTRODUCTION OF DOPING MATERIALS INTO SEMICONDUCTOR CRYSTALS DURING A CRUCIBLE ZONE MELTING
DE2319700C3 (en) * 1973-04-18 1980-11-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for influencing the radial resistance curve in a semiconductor single crystal rod during crucible-free zone melting and devices for carrying out the process
DE2327085C3 (en) * 1973-05-28 1979-03-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for doping during crucible-free zone melting
US3858549A (en) * 1973-08-15 1975-01-07 Siemens Ag Apparatus for controlled doping of semiconductor crystals
DE2623350A1 (en) * 1976-05-25 1977-12-08 Wacker Chemitronic PROCEDURE FOR DETERMINING THE EFFECTIVE DOPERANT CONTENT OF HYDROGEN FOR SEMICONDUCTOR MANUFACTURING
US4229298A (en) * 1979-02-05 1980-10-21 The Western States Machine Company Method and apparatus for determining the thickness of a charge wall formed in a centrifugal basket
US4270972A (en) * 1980-03-31 1981-06-02 Rockwell International Corporation Method for controlled doping semiconductor material with highly volatile dopant
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique
JP5194146B2 (en) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト Method for producing silicon single crystal, silicon single crystal, and wafer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
US2964396A (en) * 1954-05-24 1960-12-13 Siemens Ag Producing semiconductor substances of highest purity
NL255390A (en) * 1958-09-20 1900-01-01

Also Published As

Publication number Publication date
NL266156A (en)
BE605268A (en) 1961-12-22
US3141848A (en) 1964-07-21

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