GB1115140A - Semiconductors - Google Patents

Semiconductors

Info

Publication number
GB1115140A
GB1115140A GB5835466A GB5835466A GB1115140A GB 1115140 A GB1115140 A GB 1115140A GB 5835466 A GB5835466 A GB 5835466A GB 5835466 A GB5835466 A GB 5835466A GB 1115140 A GB1115140 A GB 1115140A
Authority
GB
United Kingdom
Prior art keywords
impurity
nitrogen
silicon
semi
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5835466A
Inventor
Roland Francis Payne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5835466A priority Critical patent/GB1115140A/en
Priority to DE19671619962 priority patent/DE1619962C3/en
Priority to FR1551367D priority patent/FR1551367A/fr
Priority to FR141038A priority patent/FR94732E/en
Publication of GB1115140A publication Critical patent/GB1115140A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

1,115,140. Semi-conductors. STANDARD TELEPHONES & CABLES Ltd. 30 Dec., 1966, No. 58354/66. Heading H1K. A first compound of an impurity to be diffused into a semi-conductor body is caused to react with water vapour to produce a second compound of the impurity, which itself reacts with the semi-conductor surface to deposit the impurity thereon and to produce diffusion into the body. In the embodiment silicon wafers 3 are placed on a quartz jig 4 within a quartz tube 1 in a furnace 2. Nitrogen flows across liquid boron tribromide 5, and carries it along a tube 7 to combine in the tube 1 with a mixture of nitrogen and oxygen introduced at C, and with further nitrogen introduced at B and bubbled through water at room temperature. The boron tribromide is oxidized to boron trioxide, which reacts with the water vapour carried by the nitrogen, to produce metaboric acid HBO 2 . This compound reacts with the silicon surface to deposit boron thereon, which impurity then diffuses into the silicon. The method may also be applied to phosphorusdoping of silicon.
GB5835466A 1966-12-30 1966-12-30 Semiconductors Expired GB1115140A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB5835466A GB1115140A (en) 1966-12-30 1966-12-30 Semiconductors
DE19671619962 DE1619962C3 (en) 1966-12-30 1967-12-23 Method for diffusing an impurity into a semiconductor body
FR1551367D FR1551367A (en) 1966-12-30 1967-12-28
FR141038A FR94732E (en) 1966-12-30 1968-02-23 A method of diffusing an impurity into a body of semiconductor material.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5835466A GB1115140A (en) 1966-12-30 1966-12-30 Semiconductors

Publications (1)

Publication Number Publication Date
GB1115140A true GB1115140A (en) 1968-05-29

Family

ID=10481399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5835466A Expired GB1115140A (en) 1966-12-30 1966-12-30 Semiconductors

Country Status (2)

Country Link
FR (1) FR1551367A (en)
GB (1) GB1115140A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644154A (en) * 1969-06-09 1972-02-22 Ibm Method of fabricating semiconductor structures with reduced crystallographic defects
JPS4840298B1 (en) * 1970-02-09 1973-11-29
US3676231A (en) * 1970-02-20 1972-07-11 Ibm Method for producing high performance semiconductor device
DE2838928A1 (en) * 1978-09-07 1980-03-20 Ibm Deutschland METHOD FOR DOPING SILICON BODIES WITH BOR

Also Published As

Publication number Publication date
FR1551367A (en) 1968-12-27
DE1619962A1 (en) 1971-02-18
DE1619962B2 (en) 1975-05-22

Similar Documents

Publication Publication Date Title
GB1276012A (en) Methods of producing antimony-containing layers on semiconductor bodies
GB1100780A (en) Improvements in or relating to the diffusion of doping substances into semiconductor crystals
GB954854A (en) Improvements in or relating to a process of transistor manufacture
GB1115140A (en) Semiconductors
GB1068189A (en) The production of semiconductor components
GB1377699A (en) Method of making a semiconductor device and a semiconductor device when made thereby
GB1281043A (en) Improvements in semiconductor devices
GB1006803A (en) Improvements in or relating to semiconductor devices
GB1264879A (en)
GB1207748A (en) DOUBLE DEPOSITIONS OF BBr3, IN SILICON
GB1098564A (en) A method for producing gallium arsenide devices
JPS5453975A (en) Manufacture for gallium phosphide green light emitting element
GB1232727A (en)
JPS5227354A (en) Impurity diffusion method for iii-v group compound semiconductor region
GB1288029A (en)
GB1015588A (en) Improvements in or relating to semiconductor devices
GB1024727A (en) Method of fabricating semiconductor devices
JPS5544741A (en) Manufacture of semiconductor device
GB1200091A (en) Improvements in or relating to methods of making semiconductor devices
GB940931A (en) Improvements in the manufacture of germanium semi-conductor devices
GB1028200A (en) Improvements in or relating to semiconductor devices
GB1046155A (en) Improvements in or relating to the manufacture of transistors
GB920985A (en) Improvements in and relating to the degenerate doping of germanium semiconductor materials
GB1033838A (en) Production of pn-junctions
JPS5492078A (en) Charge injection element