GB1028200A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1028200A GB1028200A GB3771363A GB3771363A GB1028200A GB 1028200 A GB1028200 A GB 1028200A GB 3771363 A GB3771363 A GB 3771363A GB 3771363 A GB3771363 A GB 3771363A GB 1028200 A GB1028200 A GB 1028200A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- semi
- diffused
- boron
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
1,028,200. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Sept. 25, 1963, No. 37713/63. Heading H1K. A semi-conductor device is made by providing a protective layer on a plane face of a low resistivity N(P) type semi-conductor body, diffusing an acceptor (donor) impurity into the wafer through a hole in the layer to give a surface acceptor concentration fully compensating the donor concentration, and producing a zone of P(N) type in the high resistivity zone thus produced by a further diffusion step. Typically, in forming a diode, boron is diffused into an N+ silicon wafer through an aperture formed by a photolithographic process in a protective silicon oxide layer to produce a compensated N zone. Boron at a higher concentration is then diffused through a smaller aperture to produce a P zone. Contacts are then made to opposite sides of the PN junction, preferably through holes in the oxide. To form a transistor, a further N zone is formed within the P zone by diffusion and appropriate contacts made to the three zones. Similar processes may be effected on germanium bodies.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3771363A GB1028200A (en) | 1963-09-25 | 1963-09-25 | Improvements in or relating to semiconductor devices |
| DE19641292760 DE1292760C2 (en) | 1963-09-25 | 1964-09-04 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3771363A GB1028200A (en) | 1963-09-25 | 1963-09-25 | Improvements in or relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1028200A true GB1028200A (en) | 1966-05-04 |
Family
ID=10398487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3771363A Expired GB1028200A (en) | 1963-09-25 | 1963-09-25 | Improvements in or relating to semiconductor devices |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1292760C2 (en) |
| GB (1) | GB1028200A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1314097A (en) * | 1960-12-30 | 1963-01-04 | Merck & Co Inc | Semiconductor circuit |
| FR1328195A (en) * | 1961-07-07 | 1963-05-24 | Texas Instruments Inc | Silicon transistor |
-
1963
- 1963-09-25 GB GB3771363A patent/GB1028200A/en not_active Expired
-
1964
- 1964-09-04 DE DE19641292760 patent/DE1292760C2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1292760B (en) | 1974-11-14 |
| DE1292760C2 (en) | 1974-11-14 |
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