GB1221868A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1221868A GB1221868A GB2396368A GB2396368A GB1221868A GB 1221868 A GB1221868 A GB 1221868A GB 2396368 A GB2396368 A GB 2396368A GB 2396368 A GB2396368 A GB 2396368A GB 1221868 A GB1221868 A GB 1221868A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- silica
- window
- window formed
- field relief
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
Abstract
1,221,868. Semi-conductor device. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 20 May, 1968 [20 May, 1967], No. 23963/68. Heading HlK. A passivated semi-conductor device has a field relief electrode of semi-conductor material disposed on the insulating passivating layer and extending to within less than 5 Á from the window or windows therein. Such a device may be made by first pyrolytically depositing silica on a germanium wafer and then vapour depositing intrinsic germanium to a depth of 1 Á with the wafer held at 280-300‹ C. A diode junction is then completed by diffusing impurity through a window formed in the layers by standard photoresist and etching techniques. To form a transistor a second diffusion is effected through a window formed in a silicon nitride masking layer. In a modification in which the field relief electrode consists of silicon it is overlain by a further passivating layer of silica.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET0033905 | 1967-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1221868A true GB1221868A (en) | 1971-02-10 |
Family
ID=7558105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2396368A Expired GB1221868A (en) | 1967-05-20 | 1968-05-20 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5024592B1 (en) |
| DE (1) | DE1614815A1 (en) |
| FR (1) | FR1562742A (en) |
| GB (1) | GB1221868A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1348697A (en) * | 1970-07-31 | 1974-03-20 | Fairchild Camera Instr Co | Semiconductors |
| DE2554626C3 (en) * | 1975-12-04 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Shielding device and method for its application |
| FR2420209A1 (en) * | 1978-03-14 | 1979-10-12 | Thomson Csf | HIGH VOLTAGE INTEGRATED CIRCUIT STRUCTURE |
| US5869869A (en) * | 1996-01-31 | 1999-02-09 | Lsi Logic Corporation | Microelectronic device with thin film electrostatic discharge protection structure |
-
1967
- 1967-05-20 DE DE19671614815 patent/DE1614815A1/en active Pending
-
1968
- 1968-05-16 FR FR1562742D patent/FR1562742A/fr not_active Expired
- 1968-05-20 GB GB2396368A patent/GB1221868A/en not_active Expired
- 1968-05-20 JP JP3395568A patent/JPS5024592B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1562742A (en) | 1969-04-04 |
| JPS5024592B1 (en) | 1975-08-16 |
| DE1614815A1 (en) | 1970-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed |