GB1348697A - Semiconductors - Google Patents

Semiconductors

Info

Publication number
GB1348697A
GB1348697A GB1348697DA GB1348697A GB 1348697 A GB1348697 A GB 1348697A GB 1348697D A GB1348697D A GB 1348697DA GB 1348697 A GB1348697 A GB 1348697A
Authority
GB
Grant status
Application
Patent type
Prior art keywords
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8611Planar PN junction diodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB1348697A 1970-07-31 1971-05-11 Semiconductors Expired GB1348697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US5997370 true 1970-07-31 1970-07-31

Publications (1)

Publication Number Publication Date
GB1348697A true true GB1348697A (en) 1974-03-20

Family

ID=22026513

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1348697A Expired GB1348697A (en) 1970-07-31 1971-05-11 Semiconductors

Country Status (6)

Country Link
JP (1) JPS5224833B1 (en)
BE (1) BE770353A (en)
DE (1) DE2130457C2 (en)
FR (1) FR2099704B3 (en)
GB (1) GB1348697A (en)
NL (1) NL7107832A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030273A2 (en) * 1979-11-07 1981-06-17 Siemens Aktiengesellschaft Semiconductor component having a protection ring
WO1983002529A1 (en) * 1982-01-20 1983-07-21 Flohrs, Peter Planar semiconductor device
EP0095184A2 (en) * 1982-05-25 1983-11-30 Siemens Aktiengesellschaft Schottky diode
EP0190423A2 (en) * 1984-11-29 1986-08-13 Kabushiki Kaisha Toshiba Planar semiconductor device having a field plate electrode
US4618875A (en) * 1982-01-20 1986-10-21 Robert Bosch Gmbh Darlington transistor circuit
EP0255968A2 (en) * 1986-08-08 1988-02-17 SILICONIX Incorporated High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage
FR2607629A1 (en) * 1986-11-28 1988-06-03 Fuji Electric Co Ltd Process for manufacturing a high voltage transistor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1569726A (en) * 1977-05-30 1980-06-18 Ates Componenti Elettron Planar-type semiconductor device
DE2936724A1 (en) * 1978-09-11 1980-03-20 Tokyo Shibaura Electric Co Semiconductor device contg. layer of polycrystalline silicon
DE3044341C2 (en) * 1980-11-25 1984-10-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
DE3117804A1 (en) * 1981-05-06 1982-11-25 Bosch Gmbh Robert "Planar transistor structure"
DE3520599A1 (en) * 1984-06-15 1985-12-19 Rca Corp Semiconductor component

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
DE1614815A1 (en) * 1967-05-20 1970-12-23 Telefunken Patent A semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030273A2 (en) * 1979-11-07 1981-06-17 Siemens Aktiengesellschaft Semiconductor component having a protection ring
EP0030273A3 (en) * 1979-11-07 1982-06-30 Siemens Aktiengesellschaft Semiconductor component having a protection ring
WO1983002529A1 (en) * 1982-01-20 1983-07-21 Flohrs, Peter Planar semiconductor device
US4599638A (en) * 1982-01-20 1986-07-08 Robert Bosch Gmbh Planar semiconductor structure breakdown voltage protection using voltage divider
US4618875A (en) * 1982-01-20 1986-10-21 Robert Bosch Gmbh Darlington transistor circuit
EP0095184A2 (en) * 1982-05-25 1983-11-30 Siemens Aktiengesellschaft Schottky diode
EP0095184A3 (en) * 1982-05-25 1985-06-12 Siemens Aktiengesellschaft Schottky diode
EP0190423A2 (en) * 1984-11-29 1986-08-13 Kabushiki Kaisha Toshiba Planar semiconductor device having a field plate electrode
EP0190423A3 (en) * 1984-11-29 1988-01-27 Kabushiki Kaisha Toshiba Planar semiconductor device having a field plate electrode
EP0255968A2 (en) * 1986-08-08 1988-02-17 SILICONIX Incorporated High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage
EP0255968A3 (en) * 1986-08-08 1988-08-10 SILICONIX Incorporated High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage
FR2607629A1 (en) * 1986-11-28 1988-06-03 Fuji Electric Co Ltd Process for manufacturing a high voltage transistor
US4892839A (en) * 1986-11-28 1990-01-09 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device with polysilicon resistors and field plate

Also Published As

Publication number Publication date Type
DE2130457C2 (en) 1986-09-18 grant
NL7107832A (en) 1972-02-02 application
DE2130457A1 (en) 1972-02-03 application
BE770353A (en) 1971-12-01 grant
FR2099704A7 (en) 1972-03-17 application
JPS5224833B1 (en) 1977-07-04 grant
BE770353A1 (en) grant
FR2099704B3 (en) 1973-08-10 grant

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee