GB985623A - Semiconductor circuit complexes and method of making same - Google Patents

Semiconductor circuit complexes and method of making same

Info

Publication number
GB985623A
GB985623A GB4215761A GB4215761A GB985623A GB 985623 A GB985623 A GB 985623A GB 4215761 A GB4215761 A GB 4215761A GB 4215761 A GB4215761 A GB 4215761A GB 985623 A GB985623 A GB 985623A
Authority
GB
United Kingdom
Prior art keywords
wafer
type
zone
coating
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4215761A
Inventor
Robert Norton Noyce
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Priority to GB4215761A priority Critical patent/GB985623A/en
Publication of GB985623A publication Critical patent/GB985623A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

985,623. Semi-conductor devices. FAIRCHILD CAMERA & INSTRUMENT -CORPORATION. Nov. 24, 1961, No. 42157/61. Heading H1K. A semi-conductor circuit complex comprises a wafer with zones of one conductivity type separated from each other by material of the opposite conductivity type, each zone of said one type having a zone of opposite type formed on it. A typical complex is formed from the wafer shown in Fig. 1 comprising a P-type grid which isolates N regions 13. The wafer may be formed by diffusing impurity of one type into a silicon wafer to provide a uniform doping and then diffusing impurity of the opposite type from the gaseous or solid phase simultaneously from both faces into unmasked areas of the wafer. Part of a circuit complex formed from it is illustrated in Fig. 5. One N region 31 is used as the collector zone of a transistor, the base 37 and emitter zone 38 of which are formed by sequential diffusion of acceptor and donor impurities into one face. A PN diode is formed from adjacent N region 32 by diffusion of acceptor to form P region 41 in the lower face. The wafer is protected by a coating 42 of insulation, regions exposed through apertures in the coating being interconnected as desired, e.g., at 46, 43 by metal plated on the coating. Capacitive connections may also be made through the insulating layer. Reference has been directed by the Comptroller to Specification 910,976.
GB4215761A 1961-11-24 1961-11-24 Semiconductor circuit complexes and method of making same Expired GB985623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4215761A GB985623A (en) 1961-11-24 1961-11-24 Semiconductor circuit complexes and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4215761A GB985623A (en) 1961-11-24 1961-11-24 Semiconductor circuit complexes and method of making same

Publications (1)

Publication Number Publication Date
GB985623A true GB985623A (en) 1965-03-10

Family

ID=10423110

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4215761A Expired GB985623A (en) 1961-11-24 1961-11-24 Semiconductor circuit complexes and method of making same

Country Status (1)

Country Link
GB (1) GB985623A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2005250A1 (en) * 1968-04-01 1969-12-12 Lucas Industries Ltd
FR2373930A1 (en) * 1976-12-07 1978-07-07 Indesit SEMICONDUCTOR DEVICE FOR HORIZONTAL DEVIATION OF A TELEVISION RECEIVER

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2005250A1 (en) * 1968-04-01 1969-12-12 Lucas Industries Ltd
FR2373930A1 (en) * 1976-12-07 1978-07-07 Indesit SEMICONDUCTOR DEVICE FOR HORIZONTAL DEVIATION OF A TELEVISION RECEIVER

Similar Documents

Publication Publication Date Title
GB1059739A (en) Semiconductor element and device and method fabricating the same
GB959667A (en) Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes
GB923513A (en) Improvements in semiconductor devices
GB1046152A (en) Diode structure in semiconductor integrated circuit and method of making same
GB1003131A (en) Semiconductor devices and their fabrication
GB1137388A (en) Semiconductor device
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1326286A (en) Transistors
GB1169188A (en) Method of Manufacturing Semiconductor Devices
GB1217472A (en) Integrated circuits
GB1173919A (en) Semiconductor Device with a pn-Junction
ES368777A1 (en) Method of manufacturing a zener diode
US3180766A (en) Heavily doped base rings
GB1103184A (en) Improvements relating to semiconductor circuits
GB1106787A (en) Improvements in semiconductor devices
GB985623A (en) Semiconductor circuit complexes and method of making same
GB911668A (en) Methods of making semiconductor pn junction devices
GB1279831A (en) Improvements in or relating to field effect transistors
GB1482585A (en) Semiconductor device
GB1275213A (en) Improvements in or relating to the manufacture of semiconductor components
GB1162487A (en) Integrated Circuit Planar Transistor.
GB1127161A (en) Improvements in or relating to diffused base transistors
GB1086856A (en) Improvements in or relating to methods of manufacturing semi-conductor devices
GB1063210A (en) Method of producing semiconductor devices
GB1074816A (en) Improvements relating to semi-conductor devices