GB1250585A - - Google Patents

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Publication number
GB1250585A
GB1250585A GB1250585DA GB1250585A GB 1250585 A GB1250585 A GB 1250585A GB 1250585D A GB1250585D A GB 1250585DA GB 1250585 A GB1250585 A GB 1250585A
Authority
GB
United Kingdom
Prior art keywords
region
nickel layer
crystal
nickel
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1250585A publication Critical patent/GB1250585A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,250,585. Semi-conductor devices. SIEMENS A.G. 19 Dec., 1969 [20 Dec., 1968], No. 61911/69. Heading H1K. A method of manufacturing a semi-conductor component with at least one diffused zone comprises depositing a nickel layer containing a dopant on to a part or parts of a silicon crystal, and diffusing in the dopant to form a zone or zones. A plurality of nickel layers of different thicknesses and containing different dopants may be used to produce zones of differing conductivity or conductivity type. In an embodiment an NPN transistor is formed by depositing a nickel layer containing phosphorus on parts of both faces of a P-doped silicon crystal and subsequently depositing a second nickel layer, containing boron, on the remaining surfaces and the first nickel layer. Diffusing produces a P doped base region 1 with a P<SP>+</SP> region 8 near its surface, and two N<SP>+</SP> regions, an emitter 6 and collector 7. In a second embodiment the first nickel layer is provided with a protective coating and the second nickel layer deposited only on the crystal, diffusion again producing an NPN transistor. In a third embodiment, an N doped crystal has deposited on all surfaces a nickel layer containing boron, which is subsequently diffused in to produce a P<SP>+</SP> region surrounding the N region. Using masking a second nickel layer containing phosphorus is deposited on one part of one surface of the crystal, and a second diffusion takes place producing a small central N region, a surrounding P<SP>+</SP> region and a second N<SP>+</SP> region produced by the second nickel layer. The lower part of the crystal is removed in order to gain access to the central N region, which forms the collector, the second N<SP>+</SP> region forming the emitter. It is stated that during diffusion a nickelsilicon eutectic, liquid at diffusion temperatures, is formed on the crystal, and that nickel from this eutectic diffuses into the crystal. Specification 1,250,584 is referred to.
GB1250585D 1968-12-20 1969-12-19 Expired GB1250585A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681816082 DE1816082A1 (en) 1968-12-20 1968-12-20 Process for producing diffused semiconductor components from silicon

Publications (1)

Publication Number Publication Date
GB1250585A true GB1250585A (en) 1971-10-20

Family

ID=5716945

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1250585D Expired GB1250585A (en) 1968-12-20 1969-12-19

Country Status (7)

Country Link
JP (1) JPS5011233B1 (en)
CH (1) CH519788A (en)
DE (1) DE1816082A1 (en)
FR (1) FR2026659A1 (en)
GB (1) GB1250585A (en)
NL (1) NL6918777A (en)
SE (1) SE344849B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2316125A2 (en) * 2008-08-20 2011-05-04 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH579827A5 (en) * 1974-11-04 1976-09-15 Bbc Brown Boveri & Cie

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2316125A2 (en) * 2008-08-20 2011-05-04 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
EP2316125A4 (en) * 2008-08-20 2012-02-29 Honeywell Int Inc Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Also Published As

Publication number Publication date
DE1816082B2 (en) 1978-03-02
DE1816082A1 (en) 1970-06-25
JPS5011233B1 (en) 1975-04-28
SE344849B (en) 1972-05-02
CH519788A (en) 1972-02-29
FR2026659A1 (en) 1970-09-18
NL6918777A (en) 1970-06-23

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee