GB1377699A - Method of making a semiconductor device and a semiconductor device when made thereby - Google Patents

Method of making a semiconductor device and a semiconductor device when made thereby

Info

Publication number
GB1377699A
GB1377699A GB5013572A GB5013572A GB1377699A GB 1377699 A GB1377699 A GB 1377699A GB 5013572 A GB5013572 A GB 5013572A GB 5013572 A GB5013572 A GB 5013572A GB 1377699 A GB1377699 A GB 1377699A
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
diffusion
semiconductor device
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5013572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Publication of GB1377699A publication Critical patent/GB1377699A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon

Abstract

1377699 Semi-conductor devices SUWA SEIKOSHA KK 31 Oct 1972 [10 Nov 1971] 50135/72 Heading H1K In making a semi-conductor device a layer of polycrystalline silicon containing at least two types of impurity is formed on a silicon substrate and the impurities diffused from the layer into the substrate. As described the layer is deposited to a thickness of several hundred Š to several Á by feeding a mixture of silane, phosphine and boron hydride into a reaction chamber containing the substrate which is held at 500 to 700‹ C. The layer may be deposited over the entire substrate and reduced by photoetching to areas where diffusion is required. Oxide is deposited over the layer prior to diffusion, which may be effected in oxygen. After diffusion the polycrystalline silicon may be oxidized throughout its thickness. Surface concentrations from 10<SP>14</SP> to 10<SP>20</SP> atoms/cc. are obtainable by the method.
GB5013572A 1971-11-10 1972-10-31 Method of making a semiconductor device and a semiconductor device when made thereby Expired GB1377699A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8970171A JPS4855663A (en) 1971-11-10 1971-11-10

Publications (1)

Publication Number Publication Date
GB1377699A true GB1377699A (en) 1974-12-18

Family

ID=13978063

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5013572A Expired GB1377699A (en) 1971-11-10 1972-10-31 Method of making a semiconductor device and a semiconductor device when made thereby

Country Status (4)

Country Link
JP (1) JPS4855663A (en)
CH (1) CH565452A5 (en)
DE (1) DE2255107A1 (en)
GB (1) GB1377699A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728942B2 (en) * 1973-12-22 1982-06-19
JPS50134365A (en) * 1974-04-09 1975-10-24
JPS50159253A (en) * 1974-06-12 1975-12-23
DE2439408A1 (en) * 1974-08-16 1976-02-26 Siemens Ag SEMICONDUCTOR COMPONENT
DE2449688C3 (en) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for producing a doped zone of one conductivity type in a semiconductor body
JPS5153462A (en) * 1974-11-05 1976-05-11 Fujitsu Ltd Handotaisochino seizohoho
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS5188174A (en) * 1975-01-31 1976-08-02 Handotaisochino seizohoho
JPS5222887A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Semiconductor unit manufacturing system
JPS58108767A (en) * 1981-12-22 1983-06-28 Nec Corp Manufacture of semiconductor device
US4549914A (en) * 1984-04-09 1985-10-29 At&T Bell Laboratories Integrated circuit contact technique

Also Published As

Publication number Publication date
JPS4855663A (en) 1973-08-04
CH565452A5 (en) 1975-08-15
DE2255107A1 (en) 1973-05-17

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years