GB1307036A - Doping of silicon or germanium crystals with antimony and or bismuth - Google Patents

Doping of silicon or germanium crystals with antimony and or bismuth

Info

Publication number
GB1307036A
GB1307036A GB1434971*[A GB1434971A GB1307036A GB 1307036 A GB1307036 A GB 1307036A GB 1434971 A GB1434971 A GB 1434971A GB 1307036 A GB1307036 A GB 1307036A
Authority
GB
United Kingdom
Prior art keywords
bismuth
antimony
silicon
doping
bir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1434971*[A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1307036A publication Critical patent/GB1307036A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1307036 Diffusion into semi-conductors SIEMENS AG 11 May 1971 [15 May 1970] 14349/71 Heading H1K Silicon or germanium wafers are doped with antimony and/or bismuth by a process in which an antimony compound and/or a bismuth compound is/are volatilized into a nitrogen or argon carrier stream and this is mixed immediately adjacent the inlet to the monozone diffusion furnace with a stream of oxidizing gas (oxygen), the mixture being passed over the heated wafers. The dopant compounds are chosen from SbR 3 , SbR 5 , BiR 3 , and BiR 5 where R is alkyl or aryl; such compounds where at least some R are halogen-substituted or are replaced by halogen; (SiH 3 ) 3 Sb; and (CH 3 ) 2 Sb.O.Sb(CH 3 ) 2 .
GB1434971*[A 1970-05-15 1971-05-11 Doping of silicon or germanium crystals with antimony and or bismuth Expired GB1307036A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702023992 DE2023992A1 (en) 1970-05-15 1970-05-15 Process for doping silicon or germanium crystals with antimony and / or bismuth in a single-zone furnace

Publications (1)

Publication Number Publication Date
GB1307036A true GB1307036A (en) 1973-02-14

Family

ID=5771282

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1434971*[A Expired GB1307036A (en) 1970-05-15 1971-05-11 Doping of silicon or germanium crystals with antimony and or bismuth

Country Status (5)

Country Link
AT (1) AT311300B (en)
DE (1) DE2023992A1 (en)
FR (1) FR2091612A5 (en)
GB (1) GB1307036A (en)
NL (1) NL7105407A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065508A2 (en) * 2001-02-12 2002-08-22 Asm America, Inc. Dopant precursors and processes

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065508A2 (en) * 2001-02-12 2002-08-22 Asm America, Inc. Dopant precursors and processes
WO2002065508A3 (en) * 2001-02-12 2003-09-25 Asm Inc Dopant precursors and processes
US6716751B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and processes
US6716713B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and ion implantation processes
US6743738B2 (en) 2001-02-12 2004-06-01 Asm America, Inc. Dopant precursors and processes
US7893433B2 (en) 2001-02-12 2011-02-22 Asm America, Inc. Thin films and methods of making them
US8067297B2 (en) 2001-02-12 2011-11-29 Asm America, Inc. Process for deposition of semiconductor films
US8360001B2 (en) 2001-02-12 2013-01-29 Asm America, Inc. Process for deposition of semiconductor films

Also Published As

Publication number Publication date
NL7105407A (en) 1971-11-17
FR2091612A5 (en) 1972-01-14
AT311300B (en) 1973-11-12
DE2023992A1 (en) 1971-12-02

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees