GB1135111A - Improvements in or relating to the manufacture of layers of silicon - Google Patents

Improvements in or relating to the manufacture of layers of silicon

Info

Publication number
GB1135111A
GB1135111A GB4707/66A GB470766A GB1135111A GB 1135111 A GB1135111 A GB 1135111A GB 4707/66 A GB4707/66 A GB 4707/66A GB 470766 A GB470766 A GB 470766A GB 1135111 A GB1135111 A GB 1135111A
Authority
GB
United Kingdom
Prior art keywords
diluent
silicon
feb
relating
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4707/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1135111A publication Critical patent/GB1135111A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)

Abstract

1,135,111. Depositing silicon. SIEMENS A.G. 3 Feb., 1966 [5 Feb., 1965], No. 4707/66. Heading C1A. Si is deposited epitaxially on to a heated monocrystalline carrier preferably of Si, from a reaction gas containing SiHCl 3 and H 2 in a mole ratio of 0.01 to 0.1, and additionally an inert diluent, e.g. N 2 , Ar or Kr. The amount of diluent may be 5-50 mol. per cent of the H 2 . It may be added at the start, or after the carrier has been initially heated in the reactant gases. A doping substance may also be present. Using N 2 as diluent, the temperature should be below 1300‹ C., e.g. 1130‹ C.
GB4707/66A 1965-02-05 1966-02-03 Improvements in or relating to the manufacture of layers of silicon Expired GB1135111A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0095337 1965-02-05

Publications (1)

Publication Number Publication Date
GB1135111A true GB1135111A (en) 1968-11-27

Family

ID=7519300

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4707/66A Expired GB1135111A (en) 1965-02-05 1966-02-03 Improvements in or relating to the manufacture of layers of silicon

Country Status (7)

Country Link
US (1) US3445300A (en)
AT (1) AT259019B (en)
CH (1) CH476515A (en)
DE (1) DE1544259A1 (en)
GB (1) GB1135111A (en)
NL (1) NL6601149A (en)
SE (1) SE309223B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
DE2843261C2 (en) * 1978-10-04 1983-07-28 Heraeus Quarzschmelze Gmbh, 6450 Hanau Process for the heat treatment of semiconductor components

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
DE1138481C2 (en) * 1961-06-09 1963-05-22 Siemens Ag Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase
NL288035A (en) * 1962-01-24
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
DE1250789B (en) * 1962-07-09 1967-09-28 Western Electric Company Incorporated, New York, N.Y. (V. St. A.) Process for growing an epitaxially grown single crystal with the aid of a transport reaction
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
GB1039748A (en) * 1964-07-25 1966-08-24 Ibm Improvements relating to methods of growing silicon carbide crystals epitaxially
US3354004A (en) * 1964-11-17 1967-11-21 Ibm Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems

Also Published As

Publication number Publication date
SE309223B (en) 1969-03-17
DE1544259A1 (en) 1970-07-09
AT259019B (en) 1967-12-27
NL6601149A (en) 1966-08-08
US3445300A (en) 1969-05-20
CH476515A (en) 1969-08-15

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