AT259019B - Process for producing uniform epitaxial growth layers - Google Patents

Process for producing uniform epitaxial growth layers

Info

Publication number
AT259019B
AT259019B AT103566A AT103566A AT259019B AT 259019 B AT259019 B AT 259019B AT 103566 A AT103566 A AT 103566A AT 103566 A AT103566 A AT 103566A AT 259019 B AT259019 B AT 259019B
Authority
AT
Austria
Prior art keywords
epitaxial growth
producing uniform
growth layers
uniform epitaxial
layers
Prior art date
Application number
AT103566A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT259019B publication Critical patent/AT259019B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
AT103566A 1965-02-05 1966-02-04 Process for producing uniform epitaxial growth layers AT259019B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0095337 1965-02-05

Publications (1)

Publication Number Publication Date
AT259019B true AT259019B (en) 1967-12-27

Family

ID=7519300

Family Applications (1)

Application Number Title Priority Date Filing Date
AT103566A AT259019B (en) 1965-02-05 1966-02-04 Process for producing uniform epitaxial growth layers

Country Status (7)

Country Link
US (1) US3445300A (en)
AT (1) AT259019B (en)
CH (1) CH476515A (en)
DE (1) DE1544259A1 (en)
GB (1) GB1135111A (en)
NL (1) NL6601149A (en)
SE (1) SE309223B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
DE2843261C2 (en) * 1978-10-04 1983-07-28 Heraeus Quarzschmelze Gmbh, 6450 Hanau Process for the heat treatment of semiconductor components

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
DE1138481C2 (en) * 1961-06-09 1963-05-22 Siemens Ag Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase
NL288035A (en) * 1962-01-24
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
NL292373A (en) * 1962-07-09
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
GB1039748A (en) * 1964-07-25 1966-08-24 Ibm Improvements relating to methods of growing silicon carbide crystals epitaxially
US3354004A (en) * 1964-11-17 1967-11-21 Ibm Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems

Also Published As

Publication number Publication date
GB1135111A (en) 1968-11-27
US3445300A (en) 1969-05-20
NL6601149A (en) 1966-08-08
SE309223B (en) 1969-03-17
DE1544259A1 (en) 1970-07-09
CH476515A (en) 1969-08-15

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