NL6601149A - - Google Patents

Info

Publication number
NL6601149A
NL6601149A NL6601149A NL6601149A NL6601149A NL 6601149 A NL6601149 A NL 6601149A NL 6601149 A NL6601149 A NL 6601149A NL 6601149 A NL6601149 A NL 6601149A NL 6601149 A NL6601149 A NL 6601149A
Authority
NL
Netherlands
Application number
NL6601149A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6601149A publication Critical patent/NL6601149A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
NL6601149A 1965-02-05 1966-01-28 NL6601149A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0095337 1965-02-05

Publications (1)

Publication Number Publication Date
NL6601149A true NL6601149A (xx) 1966-08-08

Family

ID=7519300

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6601149A NL6601149A (xx) 1965-02-05 1966-01-28

Country Status (7)

Country Link
US (1) US3445300A (xx)
AT (1) AT259019B (xx)
CH (1) CH476515A (xx)
DE (1) DE1544259A1 (xx)
GB (1) GB1135111A (xx)
NL (1) NL6601149A (xx)
SE (1) SE309223B (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
DE2843261C2 (de) * 1978-10-04 1983-07-28 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verfahren zum Wärmebehandeln von Halbleiterbauelementen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
NL288035A (xx) * 1962-01-24
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
NL292373A (xx) * 1962-07-09
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
GB1039748A (en) * 1964-07-25 1966-08-24 Ibm Improvements relating to methods of growing silicon carbide crystals epitaxially
US3354004A (en) * 1964-11-17 1967-11-21 Ibm Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems

Also Published As

Publication number Publication date
US3445300A (en) 1969-05-20
AT259019B (de) 1967-12-27
SE309223B (xx) 1969-03-17
GB1135111A (en) 1968-11-27
DE1544259A1 (de) 1970-07-09
CH476515A (de) 1969-08-15

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