GB1386900A - Semiconductor layers - Google Patents

Semiconductor layers

Info

Publication number
GB1386900A
GB1386900A GB201073A GB201073A GB1386900A GB 1386900 A GB1386900 A GB 1386900A GB 201073 A GB201073 A GB 201073A GB 201073 A GB201073 A GB 201073A GB 1386900 A GB1386900 A GB 1386900A
Authority
GB
United Kingdom
Prior art keywords
sih
hydrogen halide
depositing
seed layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB201073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1386900A publication Critical patent/GB1386900A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1386900 Si layer SIEMENS AG 15 Jan 1973 [14 March 1972] 2010/73 Heading ClA [Also in Division C7] A Si epitaxial layer is produced on a substrate by depositing a Si seed layer by irreversible thermal decomposition of a gaseous Si compound in the absence of hydrogen halide, followed by depositing further Si from the same atmosphere at the same temperature but with the addition of hydrogen halide. A Mg-Al spinel or sapphire substrate may be preheated at T>1000‹ C. in H 2 or etched in H 3 PO 4 at 200-400‹ C., then coated with Si at T>1000‹ C. from SiH 4 /H 2 or T<1000‹ C. from SiH 4 /He. HCl or HBr is added after the seed layer thickness reaches 0À05-0À3 Á, and deposition continued under equilibrium conditions.
GB201073A 1972-03-14 1973-01-15 Semiconductor layers Expired GB1386900A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722212295 DE2212295C3 (en) 1972-03-14 1972-03-14 Process for the production of silicon or germanium epitaxial layers

Publications (1)

Publication Number Publication Date
GB1386900A true GB1386900A (en) 1975-03-12

Family

ID=5838865

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201073A Expired GB1386900A (en) 1972-03-14 1973-01-15 Semiconductor layers

Country Status (8)

Country Link
JP (1) JPS5626137B2 (en)
BE (1) BE796757A (en)
DE (1) DE2212295C3 (en)
FR (1) FR2175840B1 (en)
GB (1) GB1386900A (en)
IT (1) IT981333B (en)
LU (1) LU67197A1 (en)
NL (1) NL7302014A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
WO2004086473A1 (en) * 2003-03-19 2004-10-07 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
US7045451B2 (en) 2003-04-05 2006-05-16 Rohm And Haas Electronic Materials Llc Preparation of group IVA and group VIA compounds
US7141488B2 (en) 2003-04-05 2006-11-28 Rohm And Haas Electronic Materials Llc Method of depositing germanium-containing films
US7413776B2 (en) 2003-04-05 2008-08-19 Rohm And Haas Electronic Materials Llc Method of depositing a metal-containing film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
US7041170B2 (en) 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
US7674335B2 (en) 1999-09-20 2010-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of producing high quality relaxed silicon germanium layers
US7955435B2 (en) 1999-09-20 2011-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of producing high quality relaxed silicon germanium layers
WO2004086473A1 (en) * 2003-03-19 2004-10-07 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
US7045451B2 (en) 2003-04-05 2006-05-16 Rohm And Haas Electronic Materials Llc Preparation of group IVA and group VIA compounds
US7141488B2 (en) 2003-04-05 2006-11-28 Rohm And Haas Electronic Materials Llc Method of depositing germanium-containing films
US7413776B2 (en) 2003-04-05 2008-08-19 Rohm And Haas Electronic Materials Llc Method of depositing a metal-containing film
US7767840B2 (en) 2003-04-05 2010-08-03 Rohm And Haas Electronic Materials Llc Organometallic compounds

Also Published As

Publication number Publication date
DE2212295A1 (en) 1973-09-27
DE2212295B2 (en) 1974-08-15
BE796757A (en) 1973-07-02
IT981333B (en) 1974-10-10
DE2212295C3 (en) 1975-04-17
JPS5626137B2 (en) 1981-06-17
FR2175840A1 (en) 1973-10-26
LU67197A1 (en) 1973-05-22
NL7302014A (en) 1973-09-18
JPS494976A (en) 1974-01-17
FR2175840B1 (en) 1977-07-29

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee